Array substrate, display device, and method for manufacturing display device

Abstract

The present invention provides an array substrate, a display device, and a method for manufacturing the display device, which can suppress damage to electrodes even when an inorganic light-emitting diode is replaced. The array substrate comprises: a substrate; a first insulating film stacked on the substrate; and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to the anode electrode of the inorganic light-emitting diode. The first electrode has a first region joined to the anode electrode via a bonding conductor, and a second region located at a position different from the first region. The plurality of second regions include a second region having a heating mark.

Description

Technical Field

[0001] The present disclosure relates to an array substrate, a display device, and a method for manufacturing the display device. Background Art

[0002] Display devices using light-emitting diodes are difficult to manufacture, such as mounting the light-emitting diodes on a substrate, due to reasons such as the small size of the light-emitting diodes, which easily leads to defects in the light-emitting diodes. In the case where such display devices are not used by discarding the defective display devices, the yield rate decreases. Therefore, in display devices using light-emitting diodes, even if the light-emitting diodes are defective, it is required to replace the light-emitting diodes. For example, Patent Document 1 describes a repair method for replacing light-emitting diodes.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2017 / 0140961 Summary of the invention

[0006] A pick-up tool (holding member) is used in the technology of Patent Document 1. If the pick-up tool (holding member) peels off the light emitting diode to be replaced from the array substrate while the light emitting diode is bonded to the array substrate, the electrodes on the array substrate side may be damaged.

[0007] An object of the present disclosure is to provide an array substrate, a display device, and a method for manufacturing the display device, which can suppress damage to electrodes even when an inorganic light emitting diode is replaced.

[0008] An array substrate in one aspect comprises: a substrate; a first insulating film stacked on the substrate; and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to an anode electrode of an inorganic light-emitting diode, the first electrode having a first region joined to the anode electrode via a joining conductor, and a second region located at a position different from the first region, the plurality of second regions including a second region having a heating mark.

[0009] A display device in one aspect comprises: an array substrate; and a plurality of inorganic light-emitting diodes bonded to the array substrate, the array substrate comprising: a substrate; a first insulating film stacked on the substrate; and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to anode electrodes of the inorganic light-emitting diodes, the first electrode having a first region bonded to the anode electrode via a bonding conductor, and a second region located at a position different from the first region, the plurality of second regions including a second region having a heating mark.

[0010] A manufacturing method for a display device in one aspect includes: a substrate preparation step of preparing an array substrate, wherein the array substrate includes a substrate, a first insulating film stacked on the substrate, and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to an anode electrode of an inorganic light emitting diode, wherein the first electrode has a first region joined to the anode electrode via a joining conductor, and a second region located at a position different from the first region; a joining step of joining the inorganic light emitting diode and the first region via a joining conductor; a lighting inspection step of inspecting the lighting state of the inorganic light emitting diode; and a repair step of irradiating a laser onto the second region of the first electrode joined to the inorganic light emitting diode confirmed to need repair in the lighting inspection step, so as to remove the inorganic light emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a plan view schematically showing the display device according to Embodiment 1.

[0012] Figure 2 is a circuit diagram showing a pixel circuit of a display device.

[0013] Figure 3 yes Figure 1 A cross-sectional view taken along the line III-III' in the direction of the arrow.

[0014] Figure 4 This is an explanatory diagram for schematically illustrating the connection between the array substrate and the light emitting element.

[0015] Figure 5 This is a plan view for schematically illustrating the first electrode and the second electrode according to the first embodiment.

[0016] Figure 6 This is an explanatory diagram for explaining a part of the steps of the manufacturing method in the first embodiment.

[0017] Figure 7 This is an explanatory diagram showing the structure of a manufacturing apparatus for a display device according to Embodiment 1.

[0018] Figure 8 This is an explanatory diagram for explaining the influence caused by laser irradiation.

[0019] Fig. 9 This is a cross-sectional view of a display device according to Embodiment 2.

[0020] Fig.10 This is a plan view for schematically illustrating the first electrode according to the second embodiment.

[0021] Fig.11 This is an explanatory diagram for explaining a part of the steps of the manufacturing method in the second embodiment.

[0022] Fig.12 This is an explanatory diagram showing the structure of a manufacturing apparatus for a display device according to the second embodiment.

[0023] Fig.13 This is a cross-sectional view of a display device according to Embodiment 3.

[0024] Fig.14 This is a cross-sectional view of a display device according to a fourth embodiment.

[0025] Fig.15 It is a top view for schematically illustrating the first electrode according to the fourth embodiment.

[0026] Fig.16 This is a cross-sectional view of a display device according to Embodiment 5.

[0027] The reference numerals are described as follows:

[0028] 1 Display device

[0029] 2 Array substrate

[0030] 3, 3N, 3A, 3AN light emitting elements

[0031] 5. Hood

[0032] 8 Light up the inspection device

[0033] 21 substrate

[0034] 22. Second electrode

[0035] 22A Area 3

[0036] 22B Area 4

[0037] 23. 1st electrode

[0038] 23A Area 1

[0039] 23B Area 2

[0040] 24 3rd electrode

[0041] 36 Anode electrode

[0042] 38 cathode electrode

[0043] 39A, 39B Conductor for bonding

[0044] 81 Inspection substrate

[0045] 82 Inspection Electrode

[0046] 91 Insulation film

[0047] 92 Insulation film

[0048] 93 Insulation film

[0049] 94 Insulation film

[0050] 95 Insulation film

[0051] 96 Insulation film

[0052] 97a Opening

[0053] 97 Insulation film

[0054] 98 Insulation film

[0055] 100 Manufacturing System

[0056] 101 Inspection control circuit

[0057] 102 Light detection device

[0058] 103 Image Processing Circuit

[0059] 104 Inspection drive circuit

[0060] 105 Laser Device

[0061] 200 Pickup Tool DETAILED DESCRIPTION

[0062] With reference to the accompanying drawings, the method (implementation method) for implementing the invention is described in detail. The present disclosure is not limited to the contents described in the following implementation methods. In addition, the constituent elements described below include constituent elements that can be easily thought of by a person skilled in the art or are substantially the same. The constituent elements described below can also be appropriately combined. In addition, the disclosure is only an example, and appropriate changes that can be easily thought of by a person skilled in the art while maintaining the gist of the invention are of course included in the scope of the present disclosure. In addition, in order to make the description clearer, the width, thickness, shape, etc. of each part in the accompanying drawings are sometimes schematically shown compared to the actual form, but this is only an example and does not limit the interpretation of the present disclosure. In addition, in the present disclosure and the drawings, the same figure mark is sometimes used for the same elements as those described in the drawings that have already appeared, and the detailed description is appropriately omitted.

[0063] (Implementation Method 1)

[0064] Figure 1 This is a plan view schematically showing the display device according to Embodiment 1. Figure 2 is a circuit diagram showing a pixel circuit of a display device. Figure 3 yes Figure 1 The cross-sectional view of the arrow direction of line III-III'. Figure 1As shown, the display device 1 includes an array substrate 2, a plurality of pixels Pix, a driving circuit 12, a driving IC (Integrated Circuit) 200, and a cathode wiring 26. The array substrate 2 is a wiring substrate for driving each pixel Pix. The array substrate 2 is also called a backplane or an active matrix substrate. The array substrate 2 includes a substrate 21 (refer to Figure 1 , Figure 3 ), the first transistor Tr1 formed on the substrate 21 (refer to Figure 2 , Figure 3 ), the second transistor Tr2 (refer to Figure 2 , Figure 3 ) etc., transistor TrG (refer to Figure 3 ), and various wirings, etc. The first transistor Tr1, the second transistor Tr2, etc. are switching elements provided for each pixel Pix. The transistor TrG is a switching element included in the drive circuit 12.

[0065] like Figure 1 As shown, the display device 1 has a display area AA and a peripheral area GA. The display area AA is arranged to overlap with a plurality of pixels Pix and is an area for displaying an image. The peripheral area GA is an area that does not overlap with a plurality of pixels Pix and is arranged outside the display area AA.

[0066] A plurality of pixels Pix are arranged along a first direction Dx and a second direction Dy in a display area AA of the substrate 21. In addition, the first direction Dx and the second direction Dy are directions parallel to the surface of the substrate 21. A direction parallel to a surface including the first direction Dx and the second direction Dy is sometimes referred to as a plane direction. The first direction Dx is orthogonal to the second direction Dy. Therefore, the second direction Dy is sometimes referred to as an orthogonal direction. Here, the first direction Dx includes a situation where it is not orthogonal to the second direction Dy but intersects. The third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy, and is sometimes referred to as a stacking direction.

[0067] The driving circuit 12 is a circuit for driving a plurality of gate lines based on various control signals from the driving IC 200. Figure 2 The first gate line GCL1 and the second gate line GCL2 are shown. The driving circuit 12 selects a plurality of gate lines sequentially or simultaneously and supplies a gate driving signal to the selected gate lines. Thus, the driving circuit 12 selects a plurality of pixels Pix connected to the gate lines.

[0068] The driver IC 200 is a circuit for controlling the display of the display device 1. The driver IC 200 is mounted as a COG (Chip On Glass) on the peripheral area GA of the substrate 21. However, the present invention is not limited thereto, and the driver IC 200 may also be mounted as a COF (Chip On Film) on a flexible printed circuit board or a rigid substrate connected to the peripheral area GA of the substrate 21.

[0069] The cathode wiring 26 is provided in the peripheral area GA of the substrate 21. The cathode wiring 26 is provided to surround the plurality of pixels Pix in the display area AA and the driving circuit 12 in the peripheral area GA. The cathodes of the plurality of light emitting elements 3 are connected to the common cathode wiring 26, and, for example, a ground potential is supplied. In the first embodiment, the cathode wiring 26 is connected to the second electrode 22 described later.

[0070] The pixel Pix has a light-emitting element 3. The light-emitting element 3 is provided corresponding to the pixel Pix, and includes a first light-emitting element 3R, a second light-emitting element 3G, and a third light-emitting element 3B that emit light of different colors. The first light-emitting element 3R emits red light. The second light-emitting element 3G emits green light. The third light-emitting element 3B emits blue light. In addition, in the following description, when it is not necessary to distinguish between the first light-emitting element 3R, the second light-emitting element 3G, and the third light-emitting element 3B, they are simply represented as light-emitting elements 3. In addition, the plurality of light-emitting elements 3 may also emit different lights of four or more colors.

[0071] The arrangement of the pixels Pix is ​​repeated in the order of the pixel Pix having the first light emitting element 3R, the pixel Pix having the second light emitting element 3G, and the pixel Pix having the third light emitting element 3B along the first direction Dx. That is, the first light emitting element 3R, the second light emitting element 3G, and the third light emitting element 3B are repeatedly arranged in this order along the first direction Dx. In addition, a plurality of the first light emitting elements 3R, the second light emitting elements 3G, and the third light emitting elements 3B are respectively arranged continuously along the second direction Dy.

[0072] The light emitting element 3 is an inorganic light emitting diode (LED: Light Emitting Diode) chip with a size of about 3 μm or more and about 300 μm or less in a top view, which is called a micro LED. A display device having a micro LED in each pixel is also called a micro LED display device. In addition, the micro of micro LED does not limit the size of the inorganic light emitting diode. In addition, the light emitting element 3 can also be a mini LED.

[0073] The pixel circuit 28 is a driving circuit for driving the light emitting element 3. Figure 2As shown, the pixel circuit 28 includes a plurality of switching elements (a first transistor Tr1, a second transistor Tr2, a third transistor Tr3, and a fourth transistor Tr4), a first gate line GCL1, a second gate line GCL2, a signal line SGL, and a power line LVdd. Each transistor is a thin film transistor (TFT).

[0074] The first transistor Tr1 is a driving TFT. The second transistor Tr2 is a switching TFT between the light-emitting period and the non-light-emitting period. The third transistor Tr3 and the fourth transistor Tr4 are current switching TFTs. The signal line SGL is connected to a constant current source. The power line LVdd is connected to a constant voltage source.

[0075] In addition, a holding capacitor CS1 is formed between the drain of the second transistor Tr2 and the anode of the light emitting element 3. In addition, a holding capacitor CS2 is formed between the anode of the light emitting element 3 and the power supply line LVdd. The pixel 2 circuit 8 suppresses the change of the gate voltage caused by the parasitic capacitance and leakage current of the second transistor Tr2 by using the holding capacitor CS1 and the holding capacitor CS2.

[0076] During the non-luminous period, the driving circuit 12 (refer to Figure 1 ) The potential of the first gate line GCL1 is set to a high level, and the potential of the second gate line GCL2 is set to a low level. As a result, the second transistor Tr2 and the third transistor Tr3 are turned on, and the fourth transistor Tr4 is turned off. The current Idata is supplied from the signal line SGL to the anode of the light emitting element 3.

[0077] During the light emission period, the driving circuit 12 (refer to Figure 1 ) sets the potential of the first gate line GCL1 to a low level, and sets the potential of the second gate line GCL2 to a high level. As a result, the second transistor Tr2 and the third transistor Tr3 are turned off, and the fourth transistor Tr4 is turned on. The current Id is supplied from the power line LVdd to the anode of the light emitting element 3. In addition, Figure 2 This is just an example, and the configuration of the pixel circuit 28 and the operation of the display device 1 can be changed as appropriate.

[0078] like Figure 3 As shown, the light emitting element 3 is provided on the array substrate 2. The array substrate 2 has a substrate 21, switching elements such as the first transistor Tr1 and the second transistor Tr2, various wirings, and various insulating films. As a plurality of transistors, a transistor TrG included in the driving circuit 12 is provided in the peripheral area GA of the substrate 21. The substrate 21 is an insulating substrate, for example, a glass substrate, a resin substrate, or a resin film.

[0079] In the present disclosure, in the direction perpendicular to the surface of the substrate 21, the direction from the substrate 21 toward the upper surface 27a of the planarization film 27 is referred to as the "upper side". In addition, the direction from the upper surface 27a of the planarization film 27 toward the substrate 21 is referred to as the "lower side". In addition, "top view" means a state observed from the direction perpendicular to the surface of the substrate 21.

[0080] The first transistor Tr1, the second transistor Tr2, and the transistor TrG are provided on one side of the substrate 21. The first transistor Tr1 includes a semiconductor 61, a source electrode 62, a drain electrode 63, a first gate electrode 64A, and a second gate electrode 64B. The first gate electrode 64A is provided on the substrate 21 via a first insulating film 91. The first insulating film 91 uses an inorganic insulating material such as a silicon oxide film (SiO), a silicon nitride film (SiN), or a silicon oxynitride film (SiON). In addition, each inorganic insulating film is not limited to a single layer, and may also be a stacked film.

[0081] The second insulating film 92 is provided on the first insulating film 91 so as to cover the first gate electrode 64A. An inorganic insulating material such as a silicon oxide film (SiO), a silicon nitride film (SiN), or a silicon oxynitride film (SiON) is used for the second insulating film 92. In addition, each inorganic insulating film is not limited to a single layer, but may be a stacked film.

[0082] The semiconductor 61 is provided on the second insulating film 92. The third insulating film 93 is provided on the second insulating film 92 so as to cover the semiconductor 61. The second gate electrode 64B is provided on the third insulating film 93. The semiconductor 61 is provided between the first gate electrode 64A and the second gate electrode 64B in the third direction Dz. In the semiconductor 61, a channel region is formed in a portion sandwiched by the first gate electrode 64A and the second gate electrode 64B.

[0083] exist Figure 3 In the example shown, the first transistor Tr1 has a so-called double-gate structure. Here, the first transistor Tr1 may be a bottom-gate structure having a first gate electrode 64A and no second gate electrode 64B, or a top-gate structure having no first gate electrode 64A and only a second gate electrode 64B.

[0084] The semiconductor 61 is composed of, for example, amorphous silicon, microcrystalline oxide semiconductor, amorphous oxide semiconductor, polycrystalline silicon, low temperature polycrystalline silicon (LTPS) or gallium nitride (GaN). Examples of oxide semiconductors include IGZO, zinc oxide (ZnO) and ITZO. IGZO is indium gallium zinc oxide. ITZO is indium tin zinc oxide.

[0085] The fourth insulating film 94 is provided on the third insulating film 93 so as to cover the second gate electrode 64B. The fourth insulating film 94 is an organic insulating film having light transmittance, and is made of a resin material such as silicone resin, epoxy resin, acrylic resin, polyimide resin, etc. The source electrode 62 and the drain electrode 63 are provided on the fourth insulating film 94. In this embodiment, the source electrode 62 is electrically connected to the semiconductor 61 via the contact hole H5. The drain electrode 63 is electrically connected to the semiconductor 61 via the contact hole H3.

[0086] The fifth insulating film 95 is provided on the fourth insulating film 94 so as to cover the source electrode 62 and the drain electrode 63. The fifth insulating film 95 is a planarizing film for planarizing the unevenness formed by the first transistor Tr1 and various wirings. The fifth insulating film 95 is an organic insulating film having light transmittance, and a resin material such as silicone resin, epoxy resin, acrylic resin, polyimide resin, etc. is used.

[0087] The second transistor Tr2 includes a semiconductor 65, a source electrode 66, a drain electrode 67, a first gate electrode 68A, and a second gate electrode 68B. The second transistor Tr2 has a layer structure similar to that of the first transistor Tr1, and a detailed description is omitted. The drain electrode 67 of the second transistor Tr2 is connected to the connection wiring 69 via the contact hole H8. The connection wiring 69 is connected to the first gate electrode 64A and the second gate electrode 64B of the first transistor Tr1.

[0088] The semiconductor 65 , source electrode 66 , drain electrode 67 , first gate electrode 68A and second gate electrode 68B may be provided in the same layer as the semiconductor 61 , source electrode 62 , drain electrode 63 , first gate electrode 64A and second gate electrode 64B of the first transistor Tr1 , or may be provided in different layers.

[0089] The transistor TrG includes a semiconductor 71, a source electrode 72, a drain electrode 73, a first gate electrode 74A, and a second gate electrode 74B. The transistor TrG is a switching element included in the drive circuit 12. The transistor TrG also has a layer structure similar to that of the first transistor Tr1, and a detailed description thereof is omitted. In addition, the third transistor Tr3 and the fourth transistor Tr4 (see Figure 2 ) also has a layer structure similar to that of the first transistor Tr1.

[0090] The fourth electrode 25 extends on the fifth insulating film 95 and is opposite to the second electrode 22 in the third direction Dz via the sixth insulating film 96. Thus, a capacitor is formed between the second electrode 22 and the fourth electrode 25. The capacitor formed between the second electrode 22 and the fourth electrode 25 is used as a holding capacitor CS of the pixel circuit 28. The sixth insulating film 96 uses an inorganic insulating material such as a silicon oxide film (SiO), a silicon nitride film (SiN), or a silicon oxynitride film (SiON). In addition, each inorganic insulating film is not limited to a single layer, and may also be a laminated film.

[0091] The seventh insulating film 97 is provided on the second electrode 22, the first electrode 23, and the sixth insulating film 96. In addition, the seventh insulating film 97 has an opening 97a for connecting the first electrode 23 and the second electrode 22 to the light emitting element 3. The seventh insulating film 97 uses an inorganic insulating material such as a silicon oxide film (SiO), a silicon nitride film (SiN), or a silicon oxynitride film (SiON). In addition, each inorganic insulating film is not limited to a single layer, and may also be a stacked film.

[0092] The third electrode 24 is provided on the fifth insulating film 95 and is connected to the drain electrode 63 via the contact hole H2. In this way, the first electrode 23 and the third electrode 24 connect the anode of the light emitting element 3 and the drain electrode 63 of the first transistor Tr1. In addition, the fourth electrode 25 is provided on the same layer as the third electrode 24 and is connected to the source electrode 62 via the contact hole H4.

[0093] A planarization film 27 is provided on the seventh insulating film 97. The planarization film 27 is provided from the display area AA to the peripheral area GA. The planarization film 27 is a light-transmitting organic insulating film, and a resin material such as silicone resin, epoxy resin, acrylic resin, polyimide resin, etc. is used. In addition, a cover portion 5 made of a light-transmitting member such as glass is provided on the planarization film 27.

[0094] Figure 4 is an explanatory diagram for schematically illustrating the connection between the array substrate and the light emitting element. Figure 4 As shown, the light emitting element 3 is on a translucent substrate 31, and a buffer layer 32, an n-type cladding layer 33, an active layer 34, a p-type cladding layer 35, and an anode electrode 36 are stacked in this order. The light emitting element 3 is mounted so that the translucent substrate 31 is on the upper side and the anode electrode 36 is on the lower side. In addition, in the n-type cladding layer 33, a region exposed from the active layer 34 is provided on the side facing the second electrode 22. A cathode electrode 38 is provided in this region.

[0095] The anode electrode 36 is formed of a material having a metallic luster that reflects light from the light emitting layer. The anode electrode 36 is connected to the first electrode 23 via a bonding conductor 39A. The cathode electrode 38 is connected to the second electrode 22 via a bonding conductor 39B.

[0096] In the light emitting element 3, the p-type cladding layer 35 and the n-type cladding layer 33 are not directly bonded, and another layer (active layer 34) is introduced between them. As a result, carriers such as electrons or holes can be concentrated in the active layer 34, and recombination (light emission) can be achieved efficiently. For the sake of efficiency, a multiple quantum well structure (MQW structure) in which energy well layers and energy barrier layers composed of multiple atomic layers are periodically stacked can also be used as the active layer 34. The light emitting element 3 has a light emitting layer in which an n-type cladding layer, an active layer, and a p-type cladding layer are stacked in this order, for example, using compound semiconductors such as gallium nitride (GaN) and aluminum indium phosphide (AlInP). As Figure 4 As shown, the light emitting element 3 has a so-called face-down structure in which the cathode electrode 38 connected to the n-type cladding layer and the anode electrode 36 connected to the p-type cladding layer are provided at the bottom. Alternatively, the light emitting element 3 may be an LED chip of another structure.

[0097] Figure 5 FIG. 1 is a top view for schematically illustrating the first electrode and the second electrode of Embodiment 1. Figure 5 As shown, the array substrate 2 has a second electrode 22 and a first electrode 23. The seventh insulating film 97 covers the first electrode 23 and the second electrode 22, and a portion of the first electrode 23 and the second electrode 22 is exposed in the opening of the seventh insulating film 97. Figure 5 As shown in FIG. 1 , the second electrode 22 has two openings of the seventh insulating film 97. In the first electrode 23, the regions overlapping the two openings of the seventh insulating film 97 are the first region 23A and the second region 23B. The second electrode 22 also has two openings of the seventh insulating film 97. In the second electrode 22, the regions overlapping the two openings of the seventh insulating film 97 are the third region 22A and the fourth region 22B.

[0098] The second electrode 22 is provided on the upper surface of the array substrate 2 on which the light emitting element 3 is mounted. The second electrode 22 is provided on the first surface of the sixth insulating film 96 via Figure 5 The wiring 26A shown in the figure is the same as the cathode wiring 26 (see Figure 1 ) is electrically connected. In addition, Figure 4 As shown, the second electrode 22 is connected to the cathode electrode 38 of the light emitting element 3 via a bonding conductor 39B.

[0099] The first electrode 23 is provided on the upper surface of the array substrate 2 on which the light emitting element 3 is mounted. The second electrode 22 is provided on the first surface of the sixth insulating film 96. Figure 3 As shown, the first electrode 23 is connected to the third electrode 24 via the contact hole H7. The first electrode 23 is connected to the anode electrode 36 of the light emitting element 3 via the bonding conductor 39A.

[0100] The bonding conductor 39A is a metal having Sn as a main component, for example. The first electrode 23 is a metal laminated body in which Al and Ti are laminated in this order, for example. The bonding conductor 39A has a lower melting point than Al, which is a material of the surface of the first electrode 23. Similarly, the bonding conductor 39B is a metal having Sn as a main component, for example. The second electrode 22 is a metal laminated body in which Al and Ti are laminated in this order, for example. The bonding conductor 39B has a lower melting point than Al, which is a material of the surface of the second electrode 22.

[0101] like Figure 5 As shown, the area of ​​the first region 23A is smaller than the area of ​​the lower side of the light emitting element 3. Here, the area of ​​the lower side of the light emitting element 3 is 3w×3h obtained by multiplying the length 3w in the first direction Dx and the length 3h in the second direction Dy. The area of ​​the second region 23B is larger than the area of ​​the first region 23A. The area of ​​the first electrode 23 provided with the first region 23A is 23w×23h obtained by multiplying the length 23w in the first direction Dx and the length 23h in the second direction Dy. Therefore, the area of ​​the first region 23A is smaller than 23w×23h.

[0102] The area of ​​the second region 23B is preferably larger than the area of ​​the lower side of the light emitting element 3. The area of ​​the first electrode 23 provided with the second region 23B is 23Bw×23Bh obtained by multiplying the length 23Bw in the first direction Dx and the length 23Bh in the second direction Dy. Therefore, the area of ​​the second region 23B is smaller than 23Bw×23Bh.

[0103] Since the material of the surface of the second region 23B has a metallic luster, the second region 23B also functions as a light reflecting layer, thereby improving the viewing angle characteristics of the display device 1 .

[0104] like Figure 5 As shown, the area of ​​the third region 22A is smaller than the area of ​​the lower side of the light emitting element 3. The area of ​​the fourth region 22B is greater than the area of ​​the third region 22A. The area of ​​the second electrode 22 provided with the third region 22A is 23w×23h obtained by multiplying the length 23w in the first direction Dx and the length 23h in the second direction Dy. Therefore, the area of ​​the third region 22A is smaller than 23Bw×23Bh.

[0105] The area of ​​the fourth region 22B is preferably larger than the area of ​​the lower side of the light emitting element 3. The area of ​​the second electrode 22 provided with the fourth region 22B is larger than 22Bw×22Bh obtained by multiplying the length 22Bw in the first direction Dx by the length 22Bh in the second direction Dy. Therefore, the area of ​​the fourth region 22B is smaller than 22Bw×22Bh.

[0106] Since the material of the surface of the fourth region 22B has a metallic luster, the fourth region 22B also functions as a light reflecting layer, thereby improving the viewing angle characteristics of the display device 1 .

[0107] Next, a method for manufacturing the display device 1 will be described. Figure 6 This is an explanatory diagram for explaining a part of the steps of the manufacturing method in the first embodiment. Figure 7 1 is an explanatory diagram showing the structure of a manufacturing apparatus for a display device according to Embodiment 1. After the substrate preparation step of preparing the array substrate 2, as shown in FIG. Figure 6 As shown in FIG. 1 , a bonding process of bonding the light emitting element 3 to the array substrate 2 prepared in advance is performed. In the bonding process, the pick-up tool 200 as a holding member has an adsorption force or an adhesive force to hold the light emitting element 3. The pick-up tool 200 is positioned toward a predetermined pixel Pix (refer to FIG. 1 ) of the array substrate 2. Figure 1 ) is carried over the array substrate 2. Thus, the light emitting element 3 is placed on the array substrate 2 (step ST11).

[0108] Figure 7 The manufacturing system 100 shown in the figure performs a bonding process, a lighting inspection process, and a repair process of a display device 1 having an array substrate 2 and a plurality of light emitting elements 3 arranged on the array substrate 2. Figure 7 As shown, the manufacturing system 100 includes the lighting inspection device 8 , an inspection control circuit 101 , a light detection device 102 , an image processing circuit 103 , an inspection drive circuit 104 , and a laser device 105 .

[0109] like Figure 6 As shown, Figure 7 The laser device 105 shown irradiates the light emitting element 3 with the laser light L1 (step ST12). The bonding conductor 39A between the anode electrode 36 and the first electrode 23 is melted by the laser light L1, and the anode electrode 36 and the first electrode 23 are bonded via the bonding conductor 39A. In addition, the bonding conductor 39B between the cathode electrode 38 and the second electrode 22 is melted by the laser light L1, and the cathode electrode 38 and the second electrode 22 are bonded via the bonding conductor 39B.

[0110] Next, the manufacturing system 100 performs a lighting inspection on the plurality of light emitting elements 3. Figure 7 As shown, the inspection control circuit 101 is a circuit for controlling the lighting inspection of the plurality of light emitting elements 3. In addition, the inspection control circuit 101 is a circuit for controlling the inspection drive circuit 104 for lighting the plurality of light emitting elements 3.

[0111] The lighting inspection device 8 is an inspection substrate for performing lighting inspections on a plurality of light emitting elements 3. The inspection electrode 82 of the lighting inspection device 8 abuts against the second electrode 22, thereby being electrically connected to the cathode electrode 38 of the light emitting element 3.

[0112] Specifically, the manufacturing system 100 brings the inspection electrode 82 of the lighting inspection device 8 into contact with the second electrode 22 of the light emitting element 3 (step ST12). Figure 7 As shown, the inspection substrate 81 is disposed opposite to the array substrate 2 via a plurality of light emitting elements 3. The inspection electrode 82 is provided on the surface of the inspection substrate 81 that faces the array substrate 2 and is electrically connected to the light emitting elements 3.

[0113] The inspection substrate 81 is an insulating substrate having light transmittance, such as a glass substrate, a quartz substrate, or a flexible substrate made of acrylic resin, epoxy resin, polyimide resin, or polyethylene terephthalate (PET) resin. Thus, even when the lighting inspection device 8 and the plurality of light emitting elements 3 are arranged overlapping, the light 3L emitted from the plurality of light emitting elements 3 passes through the lighting inspection device 8 and reaches the light detection device 102. The inspection electrode 82 is a conductive material.

[0114] By moving the lighting inspection device 8 toward the array substrate 2 , the second electrode 22 of the light emitting element 3 is brought into contact with the inspection electrode 82 .

[0115] The inspection drive circuit 104 supplies the anode power supply potential PVDD to the array substrate 2 and the cathode power supply potential PVSS to the lighting inspection device 8 based on the control signal from the inspection control circuit 101. A current corresponding to the potential difference between the anode power supply potential PVDD and the cathode power supply potential PVSS flows through the light emitting element 3, so that the light emitting element 3 emits light. In addition, the inspection drive circuit 104 only needs to supply a potential that causes the light emitting element 3 to light up as the inspection drive signal, and may also supply a potential different from the anode power supply potential PVDD and the cathode power supply potential PVSS when the display device 1 is displaying.

[0116] The light detection device 102 detects the light 3L emitted from each of the plurality of light emitting elements 3. The light detection device 102 is, for example, an image sensor having an imaging element such as a CCD. The image processing circuit 103 receives the detection signal (image data) from the light detection device 102 and performs image processing, thereby analyzing the lighting state (for example, brightness) of each of the plurality of light emitting elements 3. The image processing circuit 103 outputs information related to the lighting state of the plurality of light emitting elements 3 to the inspection control circuit 101.

[0117] The inspection control circuit 101 determines the lighting state of each of the plurality of light emitting elements 3 based on the information from the image processing circuit 103. For example, if the brightness of the light 3L emitted from the light emitting element 3 is within a prescribed range, the inspection control circuit 101 determines that the lighting state of the light emitting element 3 is good. The light emitting element 3 with a good lighting state is excluded from the objects of repair. When the brightness of the light 3L emitted from the light emitting element 3 is smaller than the reference value, the inspection control circuit 101 determines that the light emitting element 3 is in a non-lighting state. In addition, the inspection control circuit 101 calculates the ratio of the number of light emitting elements 3 in a non-lighting state to the number of all light emitting elements 3 as a connection failure rate. In addition, the inspection control circuit 101 calculates the respective positions of the light emitting elements 3 in a lit state and the light emitting elements 3 in a non-lighting state.

[0118] The light emitting element 3 determined to be in the non-lighting state is subjected to a predetermined repair by the manufacturing system 100. In the repair process, in order to suppress the positional displacement of the light emitting element 3 due to the melting of the bonding conductor 39A, the pickup tool 200 holds the light emitting element 3 by suction or adsorption. Then, the laser device 105 irradiates the second region 23B and the fourth region 22B with the laser L (step ST13).

[0119] When the second region 23B of the first electrode 23 irradiated with the laser light L generates heat and the heat is transferred to the first region 23A of the first electrode 23, the bonding conductor 39A melts. Similarly, when the fourth region 22B of the second electrode 22 irradiated with the laser light L generates heat and the heat is transferred to the third region 22A of the second electrode 22, the bonding conductor 39B melts.

[0120] While the bonding conductors 39A and 39B are being melted, the pick-up tool 200 peels off the light emitting element 3 from the array substrate 2. Then, the first electrode 23 is separated from the anode electrode 36, and the second electrode 22 is separated from the cathode electrode 38 (step ST14). As a result, even when the light emitting element 3 is removed from the array substrate 2 by the pick-up tool 200, damage to the first electrode 23 and the second electrode 22 is suppressed.

[0121] The pickup tool 200 removes the pixel Pix (see Figure 1 ) to carry other light emitting elements 3N above. Thus, the light emitting element 3N is placed on the array substrate 2 (step ST15). The volume of the bonding conductor 39A and the bonding conductor 39B is reduced due to the repair. Therefore, the bonding conductor 39C made of the same material as the bonding conductor 39A is bonded to the anode electrode 36 in advance. Similarly, the bonding conductor 39D made of the same material as the bonding conductor 39B is bonded to the cathode electrode 38 in advance.

[0122] Next, the laser device 105 irradiates the second region 23B and the fourth region 22B with the laser light L (step ST16 ).

[0123] When the second region 23B of the first electrode 23 irradiated with the laser light L generates heat and the heat is transferred to the first region 23A of the first electrode 23, the bonding conductor 39A and the bonding conductor 39C melt to form the bonding conductor 39E. Similarly, when the fourth region 22B of the second electrode 22 irradiated with the laser light L generates heat and the heat is transferred to the third region 22A of the second electrode 22, the bonding conductor 39B and the bonding conductor 39D melt to form the bonding conductor 39F.

[0124] The anode electrode 36 is bonded to the first electrode 23 via the bonding conductor 39E. The cathode electrode 38 is bonded to the second electrode 22 via the bonding conductor 39F. As a result, the light emitting element 3N is bonded to the array substrate 2 (step ST17). If the light emitting element 3N is in a good lighting state in the lighting inspection process, it is excluded from the object of the repair process. If it is determined that the light emitting element 3N is in a non-lighting state in the lighting inspection process, the light emitting element 3N is repaired again.

[0125] Figure 8 This is an illustration for explaining the effects caused by laser irradiation. Figure 4 , Figure 8 As shown, the heating mark LA remains in the second region 23B irradiated with the laser L1. Compared with the surface F of the second region 23B not irradiated with the laser, the heating mark LA can form minute irregularities on the surface, and the color of the reflected light is different from that of the surface F. The heating mark LA formed in the fourth region 22B is in the same state.

[0126] As described above, the display device 1 includes an array substrate 2 and a plurality of light-emitting elements 3 as inorganic light-emitting diodes bonded to the array substrate 2. The array substrate 2 includes a substrate 21, a fifth insulating film 95 and a sixth insulating film 96 stacked on the substrate 21, and a plurality of first electrodes 23 provided on the sixth insulating film 96 and electrically connected to the anode electrodes 36 of the light-emitting elements 3.

[0127] The first electrode 23 has a first region 23A and a second region 23B located at a position different from the first region 23A. The first electrode 23 is bonded to the anode electrode 36 via a bonding conductor 39A. A second region 23B exists in the display region AA for each pixel Pix, and therefore, a plurality of second regions 23B exist in the array substrate 2. When the light-emitting element 3 is in a good lighting state and the light-emitting element 3 is bonded to the array substrate 2 without undergoing a repair process, the heating mark LA does not remain in the second region 23B. When the light-emitting element 3N is bonded to the array substrate 2 after undergoing a repair process, at least one of the plurality of second regions 23B included in the display region AA has a heating mark LA.

[0128] The second electrode 22 has a third region 22A and a fourth region 22B located at a position different from the third region 22A. The second electrode 22 is bonded to the cathode electrode 38 via a bonding conductor 39B. For each pixel Pix, a fourth region 22B exists in the display area AA, so there are multiple fourth regions 22B in the array substrate 2. When the light-emitting element 3 is in a good lighting state and the light-emitting element 3 is bonded to the array substrate 2 without a repair process, the above-mentioned heating mark LA does not remain in the fourth region 22B. When the light-emitting element 3N is bonded to the array substrate 2 after a repair process, at least one of the multiple fourth regions 22B included in the display area AA has a heating mark LA.

[0129] Thus, when the light emitting element 3 to be replaced is bonded to the array substrate 2, even if the pickup tool 200 peels the light emitting element 3 from the array substrate 2, the bonding conductors 39A and 39B are melted, so that the first electrode 23 and the second electrode 22 of the array substrate 2 are not easily damaged. Therefore, the display device can be repaired and the manufacturing yield rate can be improved.

[0130] like Figure 3 As shown, the third electrode 24 is located between the substrate 21 and the first electrode 23. Moreover, the third electrode 24 is embedded in the fifth insulating film 95 and the sixth insulating film 96. The third electrode 24 is electrically connected to the drain electrode 63 of the first transistor Tr1 that drives the light emitting element 3. Moreover, the first electrode 23 is connected to the third electrode 24 via the contact hole H7. If the third electrode 24 includes an oxide conductor such as ITO, IZO (Indium Zinc Oxide), SnO, etc., it is possible to protect the first transistor Tr1 from the heat from the laser. This is because the heat transfer efficiency of the oxide conductor is very low compared to metals such as Al.

[0131] (Implementation Method 2)

[0132] Fig. 9This is a cross-sectional view of a display device according to Embodiment 2. Fig. 9 The cross-section view is the same as that of embodiment 1. Figure 1 The cross section is shown in the direction of the arrow on line III-III'. Fig.10 This is a plan view for schematically illustrating the first electrode according to the second embodiment. Fig.11 This is an explanatory diagram for explaining a part of the steps of the manufacturing method in the second embodiment. Fig.12 1 is an explanatory diagram showing the configuration of a manufacturing apparatus for a display device according to Embodiment 2. The same reference numerals are given to the same components as those described in Embodiment 1, and repeated descriptions are omitted. The light-emitting element 3A according to Embodiment 2 is different from the light-emitting element 3 according to Embodiment 1 in that the cathode electrode 38 of the light-emitting element 3A is located on the upper side of the main body of the light-emitting element 3A.

[0133] like Fig. 9 As shown, the second electrode 22 of the second embodiment covers the light emitting element 3A and the planarization film 27 and is electrically connected to the cathode electrode 38 of the light emitting element 3A. The second electrode 22 is provided across the upper surface of the planarization film 27 and the upper surface of the cathode electrode 38. The second electrode 22 supplies the cathode power supply potential PVSS to the cathode electrode 38. The second electrode 22 uses a light-transmitting conductive material such as ITO (IndiumTinOxide). As a result, the emitted light from the light emitting element 3A can be efficiently taken out to the outside.

[0134] The second electrode 22 is continuously provided from the display area AA to the peripheral area GA, and is connected to the cathode wiring 26 at the bottom of the contact hole H1. Specifically, the contact hole H1 is provided in the peripheral area GA to penetrate the planarization film 27 and the fifth insulating film 95, and the cathode wiring 26 is provided on the bottom surface of the contact hole H1. The cathode wiring 26 is provided on the fourth insulating film 94. That is, the cathode wiring 26 is provided in the same layer as the source electrode 62 and the drain electrode 63, and is formed of the same material.

[0135] like Fig. 9 As shown, the array substrate 2 has a first electrode 23. The seventh insulating film 97 covers the first electrode 23, and a portion of the first electrode 23 is exposed in the opening of the seventh insulating film 97. Fig.10 As shown, in the first electrode 23 , regions overlapping with the openings of the two seventh insulating films 97 are the first region 23A and the second region 23B.

[0136] like Fig.10As shown, the area of ​​the first region 23A is smaller than the area of ​​the lower side of the light emitting element 3A. Here, the area of ​​the lower side of the light emitting element 3A is 3w×3h obtained by multiplying the length 3w in the first direction Dx and the length 3h in the second direction Dy. The area of ​​the second region 23B is greater than the area of ​​the first region 23A. The area of ​​the first electrode 23 provided with the first region 23A is 23w×23h obtained by multiplying the length 23w in the first direction Dx and the length 23h in the second direction Dy. Therefore, the area of ​​the first region 23A is smaller than 23w×23h.

[0137] The area of ​​the second region 23B is preferably larger than the area of ​​the lower side of the light emitting element 3A. The area of ​​the first electrode 23 provided with the second region 23B is 23Bw×23Bh obtained by multiplying the length 23Bw in the first direction Dx and the length 23Bh in the second direction Dy. Therefore, the area of ​​the second region 23B is smaller than 23Bw×23Bh.

[0138] Next, a method for manufacturing the display device 1 is described. After the substrate preparation step of preparing the array substrate 2, as shown in FIG. Fig.11 As shown in FIG. 1 , a bonding process of bonding the light emitting element 3 to the array substrate 2 prepared in advance is performed. In the bonding process, the pick-up tool 200 as a holding member has an adsorption force or an adhesive force to hold the light emitting element 3A. The pick-up tool 200 is positioned toward a predetermined pixel Pix (refer to FIG. 1 ) of the array substrate 2. Figure 1 ) is carried over the array substrate 2. Thus, the light emitting element 3A is placed on the array substrate 2 (step ST21).

[0139] Fig.12 The manufacturing system 100 shown in the figure performs a bonding process, a lighting inspection process, and a repair process of a display device 1 having an array substrate 2 and a plurality of light emitting elements 3A arranged on the array substrate 2. Fig.12 As shown, the manufacturing system 100 includes the lighting inspection device 8 , an inspection control circuit 101 , a light detection device 102 , an image processing circuit 103 , an inspection drive circuit 104 , and a laser device 105 .

[0140] like Fig.11 As shown, Fig.12 The laser device 105 shown irradiates the light emitting element 3A with laser light L1 (step ST22). According to the laser lift-off technique, the laser device 105 lifts off the light-transmitting substrate 31 from the light emitting element 3A. The bonding conductor 39A between the anode electrode 36 and the first electrode 23 is melted by the laser light L1, and the anode electrode 36 and the first electrode 23 are bonded via the bonding conductor 39A.

[0141] Next, the manufacturing system 100 performs a lighting inspection on the plurality of light emitting elements 3A. Fig.12As shown, the inspection control circuit 101 is a circuit for controlling the lighting inspection of the plurality of light emitting elements 3A. In addition, the inspection control circuit 101 is a circuit for controlling the inspection drive circuit 104 for lighting the plurality of light emitting elements 3A.

[0142] The lighting inspection device 8 is an inspection substrate for performing lighting inspections on a plurality of light emitting elements 3A. The inspection electrode 82 of the lighting inspection device 8 abuts against the second electrode 22, thereby being electrically connected to the cathode electrode 38 of the light emitting element 3A.

[0143] Specifically, the manufacturing system 100 brings the inspection electrode 82 of the lighting inspection device 8 into contact with the second electrode 22 of the light emitting element 3A (step ST23). Fig.12 As shown, the inspection substrate 81 is disposed opposite to the array substrate 2 via the plurality of light emitting elements 3A. The inspection electrode 82 is provided on the surface of the inspection substrate 81 opposite to the array substrate 2 and is electrically connected to the light emitting element 3A.

[0144] The inspection substrate 81 is a light-transmitting insulating substrate, such as a glass substrate, a quartz substrate, or a flexible substrate made of acrylic resin, epoxy resin, polyimide resin, or polyethylene terephthalate (PET) resin. Therefore, even when the lighting inspection device 8 and the plurality of light emitting elements 3A are arranged overlapping, the light 3L emitted from the plurality of light emitting elements 3A passes through the lighting inspection device 8 and reaches the light detection device 102. The inspection electrode 82 is a light-transmitting conductive material such as ITO.

[0145] By moving the lighting inspection device 8 toward the array substrate 2 , the second electrode 22 of the light emitting element 3A is brought into contact with the inspection electrode 82 .

[0146] The inspection drive circuit 104 supplies the anode power supply potential PVDD to the array substrate 2 and supplies the cathode power supply potential PVSS to the lighting inspection device 8 based on the control signal from the inspection control circuit 101. A current corresponding to the potential difference between the anode power supply potential PVDD and the cathode power supply potential PVSS flows to the light emitting element 3A, so that the light emitting element 3A emits light. In addition, the inspection drive circuit 104 only needs to supply a potential that causes the light emitting element 3A to light up as the inspection drive signal, and may also supply a potential different from the anode power supply potential PVDD and the cathode power supply potential PVSS when the display device 1 is displaying.

[0147] The light detection device 102 detects the light 3L emitted from each of the plurality of light emitting elements 3A. The light detection device 102 is, for example, an image sensor having an imaging element such as a CCD. The image processing circuit 103 receives the detection signal (image data) from the light detection device 102 and performs image processing, thereby analyzing the lighting state (for example, brightness) of each of the plurality of light emitting elements 3A. The image processing circuit 103 outputs information related to the lighting state of the plurality of light emitting elements 3A to the inspection control circuit 101.

[0148] The inspection control circuit 101 determines the lighting state of each of the plurality of light emitting elements 3A based on the information from the image processing circuit 103. For example, if the brightness of the light 3L emitted from the light emitting element 3A is within a prescribed range, the inspection control circuit 101 determines that the lighting state of the light emitting element 3A is good. The light emitting element 3A with a good lighting state is excluded from the objects of repair. When the brightness of the light 3L emitted from the light emitting element 3A is smaller than the reference value, the inspection control circuit 101 determines that the light emitting element 3A is in a non-lighting state. In addition, the inspection control circuit 101 calculates the ratio of the number of light emitting elements 3A in a non-lighting state to the number of all light emitting elements 3A as the connection failure rate. In addition, the inspection control circuit 101 calculates the respective positions of the light emitting elements 3A in a lit state and the light emitting elements 3A in a non-lighting state.

[0149] The light emitting element 3A determined to be in the non-lighting state is subjected to a predetermined repair by the manufacturing system 100. In the repair process, the pickup tool 200 holds the light emitting element 3A by suction or adsorption in order to suppress the positional displacement of the light emitting element 3A due to the melting of the bonding conductor 39A. Then, the laser device 105 irradiates the second region 23B with the laser light L (step ST24).

[0150] When the second region 23B of the first electrode 23 irradiated with the laser light L generates heat and the heat is transferred to the first region 23A of the first electrode 23 , the bonding conductor 39A melts.

[0151] While the bonding conductor 39A is still melting, the pick-up tool 200 peels off the light emitting element 3A from the array substrate 2. Then, the first electrode 23 is separated from the anode electrode 36 (step ST25). As a result, even if the pick-up tool 200 removes the light emitting element 3A from the array substrate 2, damage to the first electrode 23 is suppressed.

[0152] The pickup tool 200 removes the pixel Pix (see Figure 1 ) is carried above the other light emitting element 3AN. As in step ST22, Fig.12The laser device 105 shown irradiates the light emitting element 3AN with laser light L1. Thus, the light emitting element 3AN is placed on the array substrate 2 (step ST26). Since the volume of the bonding conductor 39A is reduced due to the repair, the bonding conductor 39C made of the same material as the bonding conductor 39A is bonded to the anode electrode 36 in advance. The bonding conductor 39A and the bonding conductor 39C are melted by irradiation with laser light L1 to form a bonding conductor 39E. As a result, the anode electrode 36 and the first electrode 23 are bonded via the bonding conductor 39E. Moreover, the light emitting element 3AN is bonded to the array substrate 2. If the lighting state of the light emitting element 3AN is good in the above-mentioned lighting inspection process, the light emitting element 3AN is excluded from the object of the repair process. In the case where it is determined that the light emitting element 3AN is in a non-lighting state in the lighting inspection process, the light emitting element 3AN is repaired again.

[0153] Moreover, similarly to the first embodiment, when irradiating Fig.15 The second region 23B of the laser beam L1 shown in the figure has a heating mark LA. Compared with the surface F of the second region 23B not irradiated with the laser beam, the heating mark LA forms minute irregularities on the surface, and the color of the reflected light is different from that of the surface F.

[0154] As described above, the display device 1 includes an array substrate 2 and a plurality of light-emitting elements 3A as inorganic light-emitting diodes bonded to the array substrate 2. The array substrate 2 includes a substrate 21, a fifth insulating film 95 and a sixth insulating film 96 stacked on the substrate 21, and a plurality of first electrodes 23 provided on the sixth insulating film 96 and electrically connected to the anode electrodes 36 of the light-emitting elements 3A.

[0155] The first electrode 23 has a first region 23A and a second region 23B located at a position different from the first region 23A. The first electrode 23 is bonded to the anode electrode 36 via a bonding conductor 39A. A second region 23B exists in the display area AA for each pixel Pix, and therefore, a plurality of second regions 23B exist in the array substrate 2. When the light-emitting element 3A is in a good lighting state and the light-emitting element 3A is bonded to the array substrate 2 without undergoing a repair process, the heating mark LA does not remain in the second region 23B. When the light-emitting element 3AN is bonded to the array substrate 2 after undergoing a repair process, there is at least one second region 23B having the heating mark LA among the plurality of second regions 23B included in the display area AA.

[0156] Thus, when the light emitting element 3A to be replaced is bonded to the array substrate 2, even if the pickup tool 200 peels the light emitting element 3A from the array substrate 2, the bonding conductor 39A is melted, so that the first electrode 23 of the array substrate 2 is not easily damaged. Therefore, the display device 1 can be repaired and the manufacturing yield rate can be improved.

[0157] (Implementation 3)

[0158] Fig.13 This is a cross-sectional view of a display device according to Embodiment 3. Fig.13 The cross-section view is the same as that of embodiment 1. Figure 1 The same components as those described in the present embodiment are marked with the same reference numerals, and repeated descriptions are omitted. The array substrate 2 of embodiment 3 is different from the array substrate 2 of embodiment 2 in that the second region 23B of the cathode electrode 38 is located on the upper side compared to the first region 23A.

[0159] The eighth insulating film 98 is formed on the sixth insulating film 96. The eighth insulating film 98 is provided on the sixth insulating film 96 to form a convex portion protruding from the position of the first region 23A. The eighth insulating film 98 is an organic insulating film having light transmittance, and for example, a resin material such as silicone resin, epoxy resin, acrylic resin, polyimide resin, etc. is used. Here, the eighth insulating film 98 only needs to have a certain degree of height, and may be an inorganic insulating film formed in a thick film.

[0160] The first electrode 23 of the third embodiment is provided on the sixth insulating film 96 and the eighth insulating film 98. The first region 23A is located on the sixth insulating film 96, and the second region 23B is located on the eighth insulating film 98. Therefore, the first region 23A is located closer to the substrate 21 than the second region 23B.

[0161] Since the second region 23B is located above the first region 23A, it is less likely to be a shadow of the pickup tool 200. Since the second region 23B is located above the first region 23A, the laser device 105 can easily irradiate the first region 23A with the laser beam L1.

[0162] (Implementation 4)

[0163] Fig.14 This is a cross-sectional view of a display device according to a fourth embodiment. Fig.14 The cross-section view is the same as that of embodiment 1. Figure 1 The cross section is shown in the direction of the arrow on line III-III'. Fig.151 is a top view for schematically illustrating the first electrode of Embodiment 4. The same reference numerals are given to the same components as those described in the present embodiment, and repeated descriptions are omitted. The array substrate 2 of Embodiment 4 is different from the array substrate 2 of Embodiment 2 in that the second region 23B of the cathode electrode 38 is located above the first region 23A. The array substrate 2 of Embodiment 4 is different from the array substrate 2 of Embodiment 3 in that the eighth insulating film 98 is provided in a ring shape when viewed from above.

[0164] The eighth insulating film 98 is formed on the sixth insulating film 96. The eighth insulating film 98 is provided on the sixth insulating film 96 to form a convex portion protruding from the position of the first region 23A. The convex portion formed by the eighth insulating film 98 surrounds the periphery of the first region 23A where the light emitting element 3A is arranged. Thus, even if the bonding conductor 39A melts and diffuses during bonding, the convex portion formed by the eighth insulating film 98 serves as a bank to suppress diffusion of the bonding conductor 39A. As a result, it is possible to suppress an unexpected short circuit or the like.

[0165] (Implementation 5)

[0166] Fig.16 This is a cross-sectional view of a display device according to Embodiment 5. Fig.16 The cross-section view is the same as that of embodiment 1. Figure 1 The same reference numerals are given to the same components as those described in the above-mentioned embodiment.

[0167] The first region 23A of the first electrode 23 and the first electrode 23

[0168] The first electrode 23 of the fifth embodiment is different from the first electrode 23 of the second embodiment in that the first electrode 23 is separated from the second region 23B.

[0169] like Fig.16 As shown, the first region 23A of the first electrode 23 and the second region 23B of the first electrode 23 in Embodiment 5 are separated. The slit SP between the first region 23A of the first electrode 23 and the second region 23B of the first electrode 23 is covered by the seventh insulating film 97 .

[0170] The second region 23B of the first electrode 23 is electrically connected to the third electrode 24 via the contact hole H9 .

[0171] As in the second embodiment, in the repairing process, the second region 23B of the first electrode 23 is irradiated with the laser light L. The second region 23B of the first electrode 23 irradiated with the laser light L generates heat, and the heat is transferred to the third electrode 24 via the contact hole H9. When the heat transferred to the third electrode 24 is conducted to the first region 23A of the first electrode 23 via the contact hole H7, the bonding conductor 39A melts.

[0172] The third electrode 24 is embedded in the fifth insulating film 95 and the sixth insulating film 96. As described above, the fifth insulating film 95 is an organic insulating film, and therefore has a higher heat retention than an inorganic insulating film. Therefore, the melting time of the bonding conductor 39A in the repair process becomes longer. As a result, after the bonding conductor 39A is melted once, the possibility of the pickup tool 200 peeling off the light emitting element 3A from the array substrate 2 in a solidified state becomes smaller. Moreover, even if the pickup tool 200 removes the light emitting element 3A from the array substrate 2, damage to the first electrode 23 is suppressed.

[0173] The above describes a preferred embodiment, but the present disclosure is not limited to this embodiment. The content disclosed in the embodiment is only an example, and various changes can be made without departing from the scope of the present disclosure. Appropriate changes made within the scope of the present disclosure are of course also within the scope of the technology disclosed.

Claims

1. An array substrate, characterized in that: have: substrate; a first insulating film stacked on the substrate; and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to the anode electrode of the inorganic light emitting diode, The first electrode includes a first region joined to the anode electrode via a joining conductor, and a second region located at a position different from the first region. The plurality of second regions include a second region having a heating mark caused by irradiation with laser light, The bonding conductor has a lower melting point than a material of the surface of the first electrode.

2. The array substrate according to claim 1, characterized in that: The first region is located closer to the substrate than the second region.

3. The array substrate according to claim 1, characterized in that: further comprising a second insulating film provided on the first insulating film and forming a convex portion protruding from a position of the first region, The second region is arranged on the second insulating film.

4. The array substrate according to claim 1, characterized in that: further comprising a second insulating film provided on the first insulating film, the second insulating film surrounding the first region and forming a convex portion protruding from the first insulating film, The second region is arranged on the second insulating film.

5. The array substrate according to claim 1, characterized in that: further comprising a third electrode located between the substrate and the first electrode and buried in the first insulating film, The first region of the first electrode is separated from the second region of the first electrode, The first region of the first electrode and the second region of the first electrode are connected to the third electrode via contact holes, respectively.

6. The array substrate according to claim 1, characterized in that: further comprising a third electrode, the third electrode being located between the substrate and the first electrode and buried in the first insulating film and being electrically connected to a switching element for driving the inorganic light emitting diode, The first electrode is connected to the third electrode via a contact hole, The third electrode includes an oxide conductor.

7. The array substrate according to claim 1, characterized in that: It also includes a plurality of second electrodes provided on the first insulating film and used to be electrically connected to the cathode electrode of the inorganic light emitting diode, The second electrode includes a third region where the cathode electrode is joined to the second electrode via a joining conductor, and a fourth region located at a position different from the third region. The plurality of fourth regions include a fourth region where a heating mark exists.

8. A display device, characterized in that: have: an array substrate; and a plurality of inorganic light emitting diodes bonded to the array substrate, The array substrate comprises: a substrate; a first insulating film stacked on the substrate; and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to the anode electrode of the inorganic light emitting diode, wherein the first electrode has a first region joined to the anode electrode via a joining conductor, and a second region located at a position different from the first region, wherein the plurality of second regions include a second region having a heating mark generated by irradiation with laser light, The bonding conductor has a lower melting point than a material of the surface of the first electrode.

9. The display device according to claim 8, characterized in that: The first region is located closer to the substrate than the second region.

10. The display device according to claim 8, characterized in that: further comprising a second insulating film provided on the first insulating film and forming a convex portion protruding from a position of the first region, The second region is arranged on the second insulating film.

11. The display device according to claim 8, characterized in that further comprising a second insulating film provided on the first insulating film, the second insulating film surrounding the first region and forming a convex portion protruding from the first insulating film, The second region is arranged on the second insulating film.

12. The display device according to claim 8, characterized in that comprising a third electrode located between the substrate and the first electrode and buried in the first insulating film, The first region of the first electrode is separated from the second region of the first electrode, The first region of the first electrode and the second region of the first electrode are connected to the third electrode via contact holes, respectively.

13. The display device according to claim 8, characterized in that A third electrode is provided, the third electrode is located between the substrate and the first electrode and is buried in the first insulating film, and is electrically connected to a switching element that drives the inorganic light emitting diode. The first electrode is connected to the third electrode via a contact hole, The third electrode includes an oxide conductor.

14. The display device according to claim 8, characterized in that: It also includes a plurality of second electrodes provided on the first insulating film and used to be electrically connected to the cathode electrode of the inorganic light emitting diode, The second electrode includes a third region where the cathode electrode is joined to the second electrode via a joining conductor, and a fourth region located at a position different from the third region. The plurality of fourth regions include a fourth region where a heating mark exists.

15. A method for manufacturing a display device, characterized in that: include: A substrate preparation step of preparing an array substrate, the array substrate comprising a substrate, a first insulating film stacked on the substrate, and a plurality of first electrodes provided on the first insulating film and used to be electrically connected to anode electrodes of inorganic light emitting diodes, the first electrodes having a first region bonded to the anode electrodes via a bonding conductor, and a second region located at a position different from the first region; A bonding step of bonding the inorganic light emitting diode and the first region via a bonding conductor; A lighting inspection step, inspecting the lighting state of the inorganic light emitting diode; as well as In the repairing step, laser light is irradiated onto the second region of the first electrode joined to the inorganic light emitting diode confirmed to need repair in the lighting inspection step, so as to melt the joining conductor by heat transfer and remove the inorganic light emitting diode.

16. The method for manufacturing a display device according to claim 15, characterized in that: The array substrate further comprises a plurality of second electrodes provided on the first insulating film and used to be electrically connected to the cathode electrodes of the inorganic light emitting diodes. The second electrode includes a third region where the cathode electrode is joined to the second electrode via a joining conductor, and a fourth region located at a position different from the third region. In the repairing step, the fourth region of the second electrode to which the inorganic light emitting diode identified as requiring repair in the lighting inspection step is bonded is irradiated with laser light to remove the inorganic light emitting diode.

Images