CVD reactor with devices for locally influencing the base temperature

Abstract

The present invention relates to an apparatus and method for heat treating a substrate, the apparatus having a base (5) for accommodating at least one substrate, which is heatable by a heating device (13) and rotatable by a rotational actuator (20) about a rotation axis (A). To compensate for local temperature differences on the rotating base (5), devices (14, 14', 15, 16) are provided, which locally restrict heat transfer from or to the base (5) and influence heat transfer synchronously with the rotational movement of the base (5). Specifically, a temperature-controlled gas with varying thermal conductivity is periodically fed in a pulsed manner into the gap (10) between the base (5) and the cooling unit (30) through a feed opening (14').

Description

Technical Field

[0001] The present invention relates to an apparatus for heat-treating a substrate, having a base for accommodating at least one substrate that can be heated by a heating device and driven to rotate about a rotation axis by a rotational drive.

[0002] The present invention also relates to a method for heat-treating a substrate, wherein a base supports at least one substrate, is heated by a heating device, and is driven to rotate about a rotation axis. Background Technology

[0003] Document US 8,249,436 B2 describes an apparatus and a method in which heat is locally and restrictedly introduced into a base rotating about a rotation axis by means of a pulsed laser beam.

[0004] The aforementioned type of equipment and methods are also known, for example, by document DE 10 2009 044 276 A1. The aforementioned type of equipment is embodied in a CVD reactor having an airtight shell in which a process chamber is located. The bottom of the process chamber is constructed of a base that can be rotatably driven about a rotation axis. On the base are multiple substrate supports evenly distributed circumferentially around a central air intake mechanism, each supporting a substrate and kept suspended by the rotational drive of the flushing airflow. The base rotates above a heating device consisting of an induction coil cooled by a coolant. The temperature of the bottom side of the base is measured using a first pyrometer. The temperature of the substrate placed on the substrate supports is measured using a second pyrometer. The induction coil generates a high-frequency alternating field that induces eddies within the graphite-based base, thereby heating the base to the processing temperature. Due to limitations in manufacturing technology, the base material does not have uniformly distributed conductivity, resulting in areas with low conductivity and areas with high conductivity. Therefore, the varying resistances locally counteract the eddy currents induced within the base, resulting in locally varying temperatures within the base. At an average temperature of 65°C, the temperature difference within the base can range from 5 to 8 K. The technical challenge is to design the transverse temperature profile on the top side of the base, where the substrate is arranged, as uniformly as possible.

[0005] A CVD reactor is known from document DE 10 2011 055 061 A1, in which a gas mixture consisting of highly thermally conductive and weakly thermally conductive gases can be fed into the gap between the heating device and the bottom side of the base.

[0006] The prior art also includes the following documents: DE 10 2005 056 536 A1, DE 10 2009 043 960 A1, DE10 2011 053 498 A1, DE 10 2013 109 155 A1, DE 10 2014 104 218 A1, DE 10 2017 105333 A1, US 2018 / 0182635 A1, and US 5 468 299 A. Summary of the Invention

[0007] The technical problem to be solved by the present invention is to provide measures that can compensate for local temperature differences in the base.

[0008] The technical problem is solved by the invention given in the claims, wherein the dependent claims not only represent advantageous extensions of the invention described in the parallel claims, but also represent individual solutions to the technical problem.

[0009] First and foremost, it is recommended to install several devices that periodically alter the heat inflow to or heat outflow from the base in a pulsed manner within at least one locally confined heat-affected zone. The devices operate synchronously with the rotational movement of the base. The method according to the invention locally confines heat transfer from or to the base and influences heat transfer in sync with the rotational movement of the base. The heat-affected zone is locally fixed relative to the device housing. The heat-affected zone extends within an azimuth angle range, preferably smaller than the angle range occupied by the substrate support of the base around the rotational center of the base. Heat is input to or into the heat-affected zone of the rotating base in pulsed durations, the pulse duration being selected to transfer heat to the rotating base only in areas where there is insufficient heating due to the locally higher conductivity of the base material, i.e., cooler areas. The device has a controller that works in conjunction with a rotation angle detector, which detects the local rotation angle of the base. The controller synchronizes the heat effect with the rotational movement of the base, for example, ensuring that heat is always applied to the same area during each rotation of the base. The heat flow relative to the fixed position of the housing is preferably applied to the same heat-affected zone of the base during each rotation. According to the invention, it is proposed that the thermal conductivity of the medium be periodically changed within the heat-affected zone. It is particularly proposed that the medium extends between the base and the temperature control unit. It is especially preferably proposed that the thermal conductivity of the material disposed between the base and the cooling unit is periodically affected in a pulsed manner within the heat-affected zone, wherein the periodic time is the cycle time of one rotation of the base, and the pulse width is less than the cycle time. For this purpose, it is particularly specified that a gap extends between the base and the temperature control unit, through which the flushing gas flows. One or more localized inlet openings can be provided in the gap to feed temperature-controlled gas. A flushing gas having a first thermal conductivity can continuously flow through the gap. A second flushing gas, having a different thermal conductivity than the first flushing gas, is periodically and locally restricted through the inlet openings in a pulsed manner. Specifically, the first flushing gas continuously flowing through the gap is specified to be hydrogen, a gas with high thermal conductivity, and nitrogen, a gas with even lower thermal conductivity, is fed in through the feed opening. However, other gas pairs, such as helium and argon, may also be used. The cooling unit is preferably formed by liquid-cooled induction coils that heat the base. Eddy currents are generated within the base, made of graphite or another thermally conductive material, using induction coils arranged, particularly spirally, in a plane parallel to the extending plane of the base. The local size of the eddy currents is related to the slightly varying thermal conductivity of the base material, thereby generating a locally varying energy flow within the base from the electromagnetic alternating field produced by the induction coils, which results in localized temperature differences.To construct the aforementioned gap through which the temperature-controlled gas is fed, a plate can be provided extending between the base and the induction coil with a small gap distance relative to the bottom side of the base. This gap is used in the prior art to form a diffusion barrier. A flushing gas flows through the gap from the radial interior towards an exhaust mechanism arranged radially externally, preventing the process gas fed into the process chamber arranged above the base from entering the area where the induction coil is located. The temperature-controlled gas is fed into the diffusion barrier formed by the continuous airflow. The flow velocity of the flushing gas through the gap is greater than the circulation velocity of the base at the height of the radially outer edge of the substrate support. The flushing gas through the gap is particularly large, resulting in complete gas exchange occurring in the gap when the base extends beyond the heat-affected zone. However, instead of the periodic switching of the temperature-controlled gas, a constant airflow can also be specified through the feed opening, which, under valve control, is either a first gas flow or a second gas flow. For this purpose, it is particularly advantageous to introduce a gas line into the feed opening, into which a gas with high thermal conductivity or a gas with low thermal conductivity is selectively fed in, controlled by a valve. In an extension of the invention, it is suggested that multiple heat-affected zones (HAZs) be arranged circumferentially around the center of a base, the center of which coincides with the axis of rotation of the base. However, it is also possible, in combination or separately, to arrange multiple HAZs sequentially in a radial direction relative to the center of rotation of the base, wherein the HAZs are either supplied with heat by thermal radiators or are regions with variable thermal conductivity. In an extension of the invention, the HAZs may be located on the perimeter of the substrate support. This results in only the radially outer region of the rotating substrate support being affected by the HAZs, thereby allowing adjustment of the temperature profile on the substrate support. Therefore, it is particularly specified that the device used to influence heat transfer only affects the radially outer edge of the substrate support. Temperature measurement points can be arranged at different radial locations, and the surface temperature of the base can be measured, particularly on the bottom side of the base. Specifically, it is specified that temperature measuring points are arranged radially inside and radially outside the heat-affected zone. It is also specified that the surface temperature of the base is measured at these measuring points using a pyrometer. Furthermore, it is specified that an optical waveguide is used for this purpose.

[0010] According to a variant of the invention with independent features, in order to influence the radial temperature profile of the substrate carried by the substrate support, which is rotated around the axis of rotation of the substrate support, the heat-affected zone is radially offset from the rotation trajectory of the substrate support's axis of rotation around the center of the rotated base. It is particularly recommended that the heat-affected zone be located radially inside the rotation trajectory relative to the axis of rotation of the base, or preferably radially outside the rotation trajectory. It is particularly specified that the medium whose thermal conductivity is altered is a gas located between the base and the temperature control unit, wherein an RF induction coil cooled by a coolant is considered as the temperature control unit. In another variant, the heat-affected zone is specified to be located exactly on the rotation trajectory of the substrate support's axis of rotation. In the variant of the invention, the thermal conductivity does not need to be changed periodically in a pulsed manner. It is particularly advantageous that the substrate support carries a substrate with a circular shape, wherein the center point of the substrate is located in the rotation axis of the substrate support. Using this variant, the radial temperature profile of the substrate can be adjusted specifically. To influence the thermal conductivity of the medium arranged between the base and the temperature control unit, it is specifically stipulated that temperature-regulating gas is fed into the gap between the base and the temperature control unit, or between the unit and the plate arranged between the base and the temperature control unit, through gas outlets arranged radially outside the rotation trajectory, radially inside the circulation trajectory, or on the rotation trajectory. It can be specified that the flow direction of the temperature-regulating gas points radially away from the rotation axis of the substrate support along the rotation trajectory. In gas outlets arranged radially outside the rotation trajectory, the flow direction is radially outward. In gas outlets arranged radially inside the rotation trajectory, the flow direction is radially inward. However, it is also possible that even when the gas outlet is arranged radially inside the rotation trajectory, the flow direction is radially outward relative to the rotation axis of the substrate support. Attached Figure Description

[0011] Embodiments of the present invention will then be described with reference to the accompanying drawings. Wherein:

[0012] Figure 1 The CVD reactor and the base 5 arranged therein are schematically shown in a longitudinal cross-section view;

[0013] Figure 2 The first embodiment of the invention with base 5 is shown. Figure 1 The illustration;

[0014] Figure 3 A top view of the base 5 according to a first embodiment of the present invention is shown;

[0015] Figure 4 The second embodiment of the present invention is shown. Figure 1 The illustration;

[0016] Figure 5A top view of the base 5 according to a second embodiment of the present invention is shown;

[0017] Figure 6 The time-varying process of the periodic pulse effect on heat input or heat emission on the heat-affected zone on the base 5 is shown;

[0018] Figure 7 The third embodiment of the present invention is shown. Figure 2 The illustration;

[0019] Figure 8 The fourth embodiment of the present invention is shown. Figure 2 The illustration;

[0020] Figure 9 The fifth embodiment of the present invention is shown. Figure 2 The illustration;

[0021] Figure 10 The seventh embodiment of the present invention is shown. Figure 2 The illustration;

[0022] Figure 11 It shows according to Figure 4 Illustrations of another embodiment. Detailed Implementation

[0023] This type of CVD reactor (see...) Figure 1 The reactor has a CVD reactor shell 1, which is airtight, can be made of stainless steel, and can have cooled walls. The CVD reactor shell specifically has a cover 2, side walls 3 which can be cylindrically constructed, and a bottom 4 opposite to the cover 2. The cover 2, side walls 3, and bottom 4 can be cooled.

[0024] The process chamber is fed with process gas via the intake mechanism 6. The process chamber is bounded upwards by the process chamber cover 11 and downwards by the base 5. The base 5 is made of graphite or other conductive material and can be rotated about axis A around the carrier 12. A rotation actuator 20 is used for this purpose. A rotation sensor (not shown) is provided, which determines the corresponding rotation angle position of the base 5. The rotation angle is transmitted to a controller (not shown).

[0025] A heating device 13 is located below the base 5. The heating device is constructed of a liquid-cooled induction coil, which generates an RF field that induces eddy currents within the base 5. These eddy currents cause the base to heat up to the processing temperature. Typically, the processing temperature is in the range of 600 to 1000°C.

[0026] The top side of the base 5 facing the process chamber has multiple recesses arranged circumferentially around the center of the base 5. A substrate support 7 is located in each of these recesses and supports the substrate on its top side facing the process chamber. The substrate can be coated with a single-crystal material by introducing a process gas, such as a group III organometallic compound or a group V hydride. The surface temperature of the substrate is measured using a first pyrometer 21. The process gas flows radially outward through the process chamber and is exhausted by means of an exhaust mechanism 9 that annularly surrounds the base 5.

[0027] At measuring point 31, the surface temperature of the base 5 is measured using a second pyrometer 22. The temperature measurements obtained by the first pyrometer 21 and the second pyrometer 22 are transmitted to a control device (not shown). The power fed into the induction coil 13 is adjusted using an adjustment device to maintain the substrate temperature or base temperature at a rated value.

[0028] The heat fed into the base 5 exits the base either through the process chamber, towards the process chamber cover 2, or radially towards the side wall 3. However, the maximum heat flow from the base 5 enters the cooling water flowing through the induction coil 13. Therefore, the induction coil 13 utilizes its cooling channel 30 to form a cooling unit in order to extract heat from the base 5.

[0029] exist Figure 2 and 3 In the embodiment shown, a gap 10 for gas flow is created between the base 5 and the heating device 13 by means of a sealing plate 8 arranged below the base 5. The radially outer edge of the sealing plate 8 is supported on the stepped portion 19 of the exhaust mechanism 9. A first gas flow S1 can flow radially inward into the gap 10, forming a diffusion barrier that prevents the processed gas from reaching the area of ​​the reactor shell where the induction coil 13 is located. Hydrogen is typically used for this purpose.

[0030] At at least one peripheral location, a feed opening 14' is provided radially inside the peripheral area where the substrate support 7 is located. A gas line 14 passes through this feed opening 14', and a second gas flow S2 can be fed into the gap 10 via this gas line. Nitrogen is preferably used for this purpose. Figure 6A pulsed nitrogen flow can be fed into gap 10 via a valve (not shown), thereby synchronizing with the rotational movement of the base 5 to allow a temperature-regulating gas with varying thermal resistance over time to flow through gap 10 below the substrate support 7. Flow S3 is formed by two flow streams S1 and S2 and influences heat transfer from the base 5 to the cooling unit 30. Flow S2 is synchronized with the rotational movement of the base 5 such that nitrogen is mixed with hydrogen flow S1 as flow stream S2 only when a specific substrate support 7 moves within the angular range through which flow stream S3 flows with flow stream S2. Since nitrogen has lower thermal conductivity than hydrogen, less heat is absorbed from the base 5 below the substrate support 7 compared to other parts of the remaining substrate supports 7. This compensates for localized cooling points in the base 5. In this variant, the heat-affected zone is located at a predetermined radial position relative to the rotation axis A of the base 5 and at a fixed azimuth angular position relative to the rotation axis A of the substrate support and the housing. Because the heat-affected zone 17 is also fixed in position relative to the base 5, it always affects the heat transfer to the same substrate support 7 accordingly.

[0031] Figure 3 and 4 A second embodiment of the invention is shown. It is first specified here that hydrogen or nitrogen can be selectively fed into gas line 14 using a reversing valve 27. Reference numerals 28 and 29 denote a mass flow controller, which can regulate the flow of nitrogen or hydrogen. Valve 27 can be a reversing valve that directs the corresponding other flow in the "valve line".

[0032] This valve arrangement can also be configured in other embodiments. However, it is also possible to configure only a mass flow controller, which feeds, for example, a specific amount of nitrogen as a second gas flow S2 into the gap 10.

[0033] In addition, Figure 3 and 4 In the illustrated embodiment, the feed opening 14' is located in the peripheral annular region where the substrate support 7 is situated, and the substrate support is rotatably driven onto the air cushion in the recess on the top side of the base 5. The feed opening 14' is radially offset outwards from the center of the substrate support 7, thereby utilizing the temperature-regulating gas fed into the gap 10 and the airflow S3 formed therein, to ensure that only the radially outer region of the substrate support 7 is affected by temperature. Due to the rotational movement of the substrate support 7, temperature control can be performed on the radially outer region, thus generating a temperature profile.

[0034] In this embodiment, the airflow S3 has a high velocity, allowing for individual temperature influence on each substrate support 7 using both short pulses and a large number of pulses with potentially varying pulse widths. Therefore, the airflow S3 beneath the substrate support 7 is preferably greater than the circulation velocity of the base relative to the axis of rotation A of the base 5 at the radial outer edge of the substrate support 7. Preferably, however, the velocity S3 is at least twice this circulation velocity. The airflow S3 is preferably approximately 20 cm / s.

[0035] Figure 4 Furthermore, two temperature measurement points 31 and 31' are shown, wherein temperature measurement point 31 is located radially inside the feed opening 14', and temperature measurement point 31' is located radially outside the feed opening 14'. However, this arrangement of the two temperature measurement points 31 and 31' can also be configured in other locations. Figure 2 and 3 In the embodiment shown, it is specifically specified that the temperature is measured at measurement points 31, 31' using a pyrometer. For this purpose, optical waveguides 24, 26, connected to the pyrometer (not shown), are guided in tubes 23, 25.

[0036] exist Figure 7 In the illustrated embodiment, multiple heat-affected zones and, in particular, multiple feed openings 14' are arranged circumferentially around the rotation axis A of the base 5, wherein the arrangement is uniformly distributed.

[0037] Figure 8 The fourth embodiment shown illustrates multiple heat-affected zones or feed openings 14', each arranged radially at the center of the peripheral region where the substrate support 7 is located. However, in a variation of the embodiment shown there, the feed openings 14' may also be arranged below only some of the substrate supports 7, or only below one of the substrate supports 7. Alternatively, in Figure 8 In the illustrated embodiment, the feed openings 14' shown on the rotation trajectory of the substrate support rotation axis can be arranged radially offset. The feed openings 14' can therefore be located radially inward or radially outward relative to the center of the base 5 on the rotation trajectory. The flow direction of the temperature-regulating gas discharged from one or more feed openings 14' can be radially inward and radially outward relative to the base rotation axis.

[0038] exist Figure 9In the illustrated embodiment, multiple heat-affected zones or feed openings 14' are arranged sequentially in the radial direction. The feed openings 14' are selectively operable. The substrate support 7 can rotate about its rotation axis and, in particular, each supports only one disc-shaped substrate. In this embodiment, the temperature-regulating gas exiting from the selected feed opening 14' is discharged non-pulsively, i.e., constantly, into the gap between the base bottom and the heating or cooling unit. However, in this variant, it is also possible that the temperature-regulating gas is discharged synchronously and pulsedly from one or more of the feed openings 14' with the rotational movement of the base. It is also possible that the gas flow is discharged non-pulsively through the feed openings 14'. Different gas flows and / or different gas types can also be discharged pulsedly or non-pulsively from the feed openings 14'. For this purpose, it is particularly advantageous that the multiple feed openings 14' are arranged circumferentially staggered relative to the center of the base 5. Different gases or mixtures of different gases can also be discharged at different pulse rates through different feed openings 14'.

[0039] exist Figure 10 In the illustrated embodiment, the feed opening 14' is arranged in the radially outermost region of the peripheral area where the substrate support 7 is located. The heat-affected zone, or feed opening 14', may even be arranged radially outside the region where the substrate support 7 is located.

[0040] At least one heat-affected zone 17 is confined to an angular range around axis A. This angular range is at most 90, 60, or 45 degrees, or preferably at most 30, 20, or 15 degrees.

[0041] Figure 11 The illustrated embodiments are basically corresponding to Figure 4 In the illustrated embodiment, however, it is specified that the feed opening 14 is located radially outside the rotation axis B of the substrate support, about which the substrate support 7 is rotatably driven. For this purpose, the substrate support 7 is positioned on an air cushion that feeds into the gap between the substrate support 7 and the base 5 with angular momentum, causing the substrate support 7 to rotate. The substrate support 7 preferably carries a circular substrate. The center point and the rotation axis B preferably coincide.

[0042] Airflow is fed into the gap 10 through the feed opening 14 and flows outward through the gap 10. Airflow can also be fed in a constant manner or synchronously with the rotation of the base 5.

[0043] The light wave conductor 24 can be located in the tube 23, which feeds a first gas flow S1 into the gap 10. The first gas flow can be, for example, nitrogen. The tube 23 is arranged radially inward of the rotation trajectory of the substrate support's rotation axis B relative to the rotation axis A of the base 5. A feed opening 14' is located in the radially outer region of the rotation trajectory for feeding a gas with different thermal conductivity, such as hydrogen, thereby providing different heat transfer characteristics in the gap 10 in the radially outer region of the substrate support 7 compared to the region at the center where the substrate support's rotation axis B is located.

[0044] However, in a variant not shown, the feed opening 14' can also be arranged radially inside the rotation axis B of the substrate support 7 and near the rotation axis A of the base 5. The rotation axis B of the substrate support 7 represents a circular loop around the rotation axis of the base 5 within the reactor shell 1. The feed opening 14' can also be located on the rotation trajectory.

[0045] The foregoing embodiments are used to illustrate the invention generally covered by this application. This invention also independently extends the prior art through at least the following combinations of features, wherein two, more, or all of the features can also be combined, namely:

[0046] An apparatus characterized in that the device periodically changes the thermal conductivity of a medium arranged between a base 5 and a temperature control unit in a pulse manner.

[0047] A method characterized by locally and periodically altering the thermal conductivity of a medium disposed between a base 5 and a temperature control unit in a pulsed manner.

[0048] An apparatus characterized in that the heat-affected zone 17 is a region arranged inside or outside, or on the rotation trajectory of the substrate support rotation axis B around the base rotation axis A, relative to the base rotation axis A.

[0049] A method characterized in that the heat-affected zone 17 is a region arranged inside or outside, or on the rotation trajectory of the substrate support rotation axis B around the base rotation axis A, relative to the base rotation axis A.

[0050] An apparatus or method characterized in that, as the cycle time of the base 5 periodically increases, either within a time period shorter than the cycle time of the base 5 or within a time period longer than the cycle time of the base 5, more heat is introduced into or extracted from the base 5 in the location-restricted heat-affected zone 17 compared to the adjacent region of the base 5, or a device is configured for this purpose.

[0051] An apparatus or method characterized in that the temperature control unit is a cooling unit 30, which is formed in particular by a cooling channel of an RF induction coil 13, wherein an electromagnetic alternating field is generated by the RF induction coil 13, which induces eddy currents in the conductive material of the base 5 for heating the base.

[0052] An apparatus or method characterized in that a temperature-regulating gas is fed into the gap 10 between the base 5 and the temperature-regulating unit, particularly with the cooling unit 30, either periodically in a pulsed manner or at a constant flow rate through the feed opening 14', wherein the feed gas is specifically specified to have periodically varying thermal conductivity, and wherein a gas delivery line 14 is provided through the feed opening 14', by means of a reversing valve 28 to selectively feed or feedable gas with high thermal conductivity or gas with lower thermal conductivity into the gas delivery line.

[0053] An apparatus or method characterized in that a gap 10 is constructed by a sealing plate 8 arranged between the heating device 13 and the bottom side of the base 5, a continuous first airflow S1 of flushing gas flows through the gap, and a second airflow S2 of temperature-regulating gas is fed into the first airflow S1, wherein the first airflow S1 and the second airflow S2 form a third airflow S3 between a substrate support 7 for supporting the substrate and the heating device 13, the flow velocity of the third airflow being greater than the circumferential velocity of the base 5 at the radially outer edge of the substrate support 7.

[0054] An apparatus or method characterized by having a plurality of heat-affected zones 17 in which heat is periodically introduced or exported in a pulse manner, wherein the heat-affected zones 17 are arranged at different azimuth angles relative to the center of the base 5, and / or at different radial distances relative to the center of the base 5.

[0055] An apparatus or method characterized in that at least one heat-affected zone 17 is arranged in a circumferential region surrounding the center of a base 5, and a plurality of substrate supports are located in the base, wherein heat is periodically introduced or discharged in a pulsed manner on the heat-affected zone.

[0056] An apparatus or method characterized in that the heat-affected zone 17 is limited to an angular range of a maximum of 90 degrees, 60 degrees, 45 degrees, 30 degrees or 15 degrees around axis A.

[0057] An apparatus or method characterized by temperature measuring points 31, 31' arranged radially outside and / or radially inside the heat-affected zone for measuring the temperature of the surface of the base 5.

[0058] An apparatus or method characterized in that the temperature-regulating gas has a radially inward or radially outward flow direction relative to the rotation axis A of the base.

[0059] An apparatus or method characterized in that a plurality of feed openings 14' are arranged at radial distances from each other relative to the rotation axis A of the base, wherein one or more temperature-controlled gases can be selectively fed through one or more feed openings 14'.

[0060] All disclosed features (individually but also in combination) are essential to the invention. The disclosure of this application also fully includes the disclosure of the relevant / attached priority documents (copies of earlier applications), also for the purpose of incorporating the features of those documents into the claims of this application. Even if no features of a cited claim are present, dependent claims utilize their features to characterize independent, inventive extensions of the prior art, particularly for the purpose of filing divisional applications based on these claims. The invention described in each claim may additionally have one or more of the features specifically provided with reference numerals in the foregoing description and / or described in the list of reference numerals. The invention also relates to several design forms in which some features mentioned in the foregoing description are not implemented, especially since they are generally unnecessary for the respective purpose of use, or can be replaced by other technically equivalent devices.

[0061] List of reference numerals

[0062]

[0063]

[0064]

Claims

1. A method for heat-treating a substrate, wherein, The base (5) carries at least one substrate, is heated by a heating device, and is driven to rotate about a rotation axis (A). The temperature of the base (5) is affected in a heat-affected zone (17) that is locally confined within an azimuth angle range about the rotation axis (A). The thermal conductivity of the medium arranged between the base (5) and the temperature control unit affects the temperature of the base (5) in the heat-affected zone (17). The thermal conductivity of the medium arranged between the base (5) and the temperature control unit is changed in a pulsed manner in sync with the rotational motion of the base (5) so that heat is always input and discharged to the same part of the base (5) during each rotation of the base (5).

2. An apparatus for heat-treating a substrate, the apparatus having a housing and a base (5) disposed in the housing, which is heatable by a heating device and rotatable by a rotational actuator (20) about a base rotation axis (A), the base having a plurality of substrate supports (7) arranged circumferentially about the rotation axis (A) for accommodating at least one substrate, and having a controller that cooperates with the detection of the rotation angle of the base (5), the controller being designed to, in a heat-affected zone (17) locally confined within an azimuth angle range about the rotation axis (A), synchronously and in a pulse manner change the thermal conductivity of a medium disposed between the base (5) and a temperature control unit, such that the same part of the base (5) is always temperature-controlled during each rotation of the base (5), characterized in that, The temperature control unit is a cooling unit (30), and / or the cooling unit is formed by a cooling channel of an RF induction coil, wherein the RF induction coil generates an electromagnetic alternating field, which induces eddy currents in the conductive material of the base (5) to heat the base.

3. The method according to claim 1, characterized in that, Temperature-regulating gas is fed into the gap (10) between the base (5) and the temperature-regulating unit or the cooling unit (30) either periodically in a pulse manner or at a constant flow rate through the feed opening, and / or temperature-regulating gas with periodically varying thermal conductivity is fed into the gap (10) between the base (5) and the temperature-regulating unit, and / or a gas delivery line is connected to the feed opening, and a gas with high thermal conductivity or a gas with lower thermal conductivity is selectively fed into or can be fed into the gas delivery line by means of a reversing valve (28).

4. The method according to claim 3, characterized in that, A gap (10) is formed by a sealing plate (8) arranged between the heating device and the bottom side of the base (5). A continuous first airflow (S1) of flushing gas flows through the gap, and a second airflow (S2) of temperature-regulating gas is fed into the first airflow (S1). The first airflow (S1) and the second airflow (S2) form a third airflow (S3) between the substrate support (7) for supporting the substrate and the heating device. The velocity of the third airflow is greater than the circumferential velocity of the base (5) on the radially outer edge of the substrate support (7).

5. An apparatus for heat-treating a substrate, the apparatus having a base (5) capable of being heated by a heating device and rotatably driven by a rotational actuator (20) about a base rotation axis (A), the base carrying at least one substrate support (7) rotatably arranged on the base (5) about a substrate support rotation axis (B) for accommodating at least one substrate, the apparatus having a device controllable by a control device for influencing the thermal conductivity of a medium within a heat-affected zone (17), the heat-affected zone (17) being a region arranged radially inside or radially outside or on the rotational trajectory of the substrate support rotation axis (B) about the base rotation axis (A) relative to the base rotation axis (A), characterized in that, The medium is arranged between the base (5) and the temperature control unit arranged below the base (5), and the control device is designed to periodically introduce or remove more heat from the base (5) in a position-restricted heat-affected zone (17) than in the adjacent area of ​​the base (5) within a time period less than the cycle time of the base (5), wherein multiple heat-affected zones (17) are provided, in which heat is periodically introduced or removed in a pulse manner, wherein the heat-affected zones (17) are arranged at different azimuth angles relative to the center of the base (5) and / or at different radial distances relative to the center of the base (5).

6. An apparatus for heat-treating a substrate, the apparatus having a base (5) capable of being heated by a heating device and rotatably driven by a rotational actuator (20) about a base rotation axis (A), the base carrying at least one substrate support (7) rotatably arranged on the base (5) about a substrate support rotation axis (B) for accommodating at least one substrate, the apparatus having a device controllable by a control device for influencing the thermal conductivity of a medium within a heat-affected zone (17), the heat-affected zone (17) being a region arranged radially inside or radially outside or on the rotational trajectory of the substrate support rotation axis (B) about the base rotation axis (A) relative to the base rotation axis (A), characterized in that, The medium is arranged between the base (5) and the temperature control unit arranged below the base (5), and the control device is designed to periodically introduce or remove more heat from the base (5) in a position-restricted heat-affected zone (17) than in the adjacent area of ​​the base (5) within a time period less than the cycle time of the base (5), wherein at least one heat-affected zone (17) is arranged in a circumferential area around the center of the base (5), and multiple substrate supports are located in the base, on which heat is periodically introduced or removed in a pulse manner.

7. An apparatus for heat-treating a substrate, the apparatus having a base (5) capable of being heated by a heating device and rotatably driven by a rotational actuator (20) about a base rotation axis (A), the base carrying at least one substrate support (7) rotatably arranged on the base (5) about a substrate support rotation axis (B) for accommodating at least one substrate, the apparatus having a device controllable by a control device for influencing the thermal conductivity of a medium within a heat-affected zone (17), the heat-affected zone (17) being a region arranged radially inside or radially outside or on the rotational trajectory of the substrate support rotation axis (B) about the base rotation axis (A) relative to the base rotation axis (A), characterized in that, The medium is arranged between the base (5) and the temperature control unit arranged below the base (5), and the control device is designed to periodically introduce or remove more heat from the base (5) in the location-restricted heat-affected zone (17) than in the adjacent area of ​​the base (5) within a time period less than the cycle time of the base (5), wherein the heat-affected zone (17) is restricted to an angle range of a maximum of 90 degrees, 60 degrees, 45 degrees, 30 degrees or 15 degrees around the axis (A).

8. An apparatus for heat-treating a substrate, the apparatus having a housing and a base (5) disposed in the housing, which is heatable by a heating device and rotatable by a rotational actuator (20) about a base rotation axis (A), the base having a plurality of substrate supports (7) arranged circumferentially about the rotation axis (A) for accommodating at least one substrate, and having a controller that cooperates with the detection of the rotation angle of the base (5), the controller being designed to, in a heat-affected zone (17) locally confined within an azimuth angle range about the rotation axis (A), synchronously and in a pulse manner change the thermal conductivity of a medium disposed between the base (5) and a temperature control unit, such that, during each rotation of the base (5), the same portion of the base (5) is always temperature-controlled, characterized in that, Temperature measurement points (31, 31') are arranged radially outside and / or radially inside the heat-affected zone to measure the temperature of the surface of the base (5).

9. The method according to claim 4, characterized in that, The temperature-regulating gas has a radially inward or radially outward flow direction relative to the rotation axis (A) of the base.

10. The method according to claim 4, characterized in that, Multiple feed openings are located at radial distances from each other relative to the rotation axis (A) of the base, wherein one or more temperature-controlled gases can be selectively fed through one or more feed openings.

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