Method for operating a liquid treatment device and liquid treatment device

Abstract

The present disclosure relates to a method for operating a liquid processing apparatus and a liquid processing apparatus, in which a cleaning of a flow path system constituting the apparatus is reliably and quickly performed when the liquid processing apparatus, which supplies a processing liquid to a substrate to process the substrate, is operated. The following processes are implemented: a processing process in which a pump provided in a flow path system including a supply path is used to circulate a processing liquid from a processing liquid supply source to a downstream side of the supply path provided with a filter, and the processing liquid is supplied from a supply portion forming a downstream end of the supply path to a substrate to process the substrate; a cleaning process in which a cleaning liquid is supplied to the flow path system to clean the flow path system; and a supply path cleaning process in which, in the cleaning process, the cleaning liquid is supplied from an upstream side to a downstream side of the supply path in a cleaning state in which a pressure loss of a fluid in the supply path is lower than the pressure loss in the processing process, to clean the supply path.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a method for operating a liquid processing apparatus and a liquid processing apparatus. BACKGROUND

[0002] In a manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter referred to as a wafer) as a substrate is supplied with various kinds of processing liquids by a liquid processing apparatus to perform liquid processing on the wafer. As an example of the liquid processing, there is a process of forming a coating film by supplying a processing liquid such as a resist to the wafer. In order to prevent foreign matter from being supplied to the wafer together with the processing liquid, it is required that a piping system constituting the liquid processing apparatus be kept clean. In Patent Literature 1, there is shown a coating apparatus configured to clean a pipe by using a plurality of chemical solutions. In Patent Literature 2, there is shown a method of cleaning a pipe of a liquid processing apparatus by using a chemical solution containing a specific component.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2005-131637

[0006] Patent Literature 2: Japanese Patent Application Laid-Open No. H6-320128 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present disclosure provides a technique capable of reliably and quickly performing cleaning of a flow path system constituting a liquid processing apparatus when the liquid processing apparatus is operated to supply a processing liquid to a substrate to process the substrate.

[0009] SOLUTION TO PROBLEM

[0010] The method for operating a liquid processing apparatus of the present disclosure includes the following steps:

[0011] a processing step of circulating a processing liquid from a processing liquid supply source to a downstream side of a supply path provided with a filter by a pump provided to a flow path system including the supply path, and supplying the processing liquid from a supply part forming a downstream end of the supply path to a substrate to process the substrate;

[0012] a cleaning step of supplying a cleaning liquid to the flow path system to clean the flow path system; and

[0013] a supply path cleaning step of supplying the cleaning liquid from an upstream side to a downstream side of the supply path in a cleaning state in which a pressure loss of a fluid in the supply path is lower than a pressure loss in the processing step to clean the supply path in the cleaning step.

[0014] EFFECT OF THE INVENTION

[0015] According to the present disclosure, the present disclosure can reliably and quickly perform cleaning of a flow path system constituting a device when the device is operated to supply a processing liquid to a substrate to process the substrate. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a configuration view of a resist coating device as one embodiment of the present disclosure.

[0017] Figure 2 is an explanatory view for explaining a process performed by the resist coating device.

[0018] Figure 3 is a flowchart showing steps performed when the resist coating device is abnormal.

[0019] Figure 4 is an explanatory view showing steps in the flowchart.

[0020] Figure 5 is an explanatory view showing steps in the flowchart.

[0021] Figure 6 is an explanatory view showing steps in the flowchart.

[0022] Figure 7 is an explanatory view showing steps in the flowchart.

[0023] Figure 8 is an explanatory view showing steps in the flowchart.

[0024] Figure 9 is an explanatory view showing steps in the flowchart.

[0025] Figure 10 is an explanatory view showing steps in the flowchart.

[0026] Figure 11 is an explanatory view showing steps in the flowchart.

[0027] Figure 12 is an explanatory view showing steps in the flowchart.

[0028] Figure 13 is an explanatory view showing steps in the flowchart.

[0029] Figure 14 is a line graph showing an outline of a change in a pump when the flowchart is executed.

[0030] Figure 15 is an explanatory view showing a state of a flow path when the flowchart is executed.

[0031] Figure 16 is an explanatory view showing the state of the flow path at the time of execution of the flow.

[0032] Figure 17 is a side view of a nozzle provided to the resist coating device.

[0033] Figure 18 is an explanatory view showing the state of the flow path at the time of execution of the flow.

[0034] Figure 19 is a configuration view of a resist coating device according to another embodiment.

[0035] Figure 20 is a configuration view of a resist coating device according to another embodiment.

[0036] Figure 21 is a configuration view of a resist coating device according to another embodiment.

[0037] BRIEF DESCRIPTION OF DRAWINGS

[0038] RB: resist bottle; W: wafer; 1: resist coating device; 3: piping system; 32: pipe; 33: filter; 47: pump. DETAILED DESCRIPTION

[0039] Hereinafter, a resist coating device 1 as one embodiment of a liquid processing device of the present disclosure will be described with reference to Figure 1 The resist coating device 1 forms a resist film by spin coating a resist as a processing liquid to a wafer W as a substrate. The resist coating device 1 has a processing section 11, a nozzle moving section 2, and a piping system 3.

[0040] The processing section 11 described above has a spin chuck 12 as a substrate holding section, a rotation mechanism 13, and a cup 14. The spin chuck 12 adsorbs and holds a central portion of the back surface of the wafer W, and the spin chuck 12 is rotated by the rotation mechanism 13. The cup 14 surrounds the side periphery of the wafer W held by the spin chuck 12 to catch liquid scattered from the wafer W.

[0041] The nozzle 31 constituting the terminal end of the piping system 3 is configured to be freely movable by the nozzle moving section 2 between the central portion of the wafer W held by the spin chuck 12 and a waiting section 15 provided outside the cup 14. The waiting section 15 has a liquid discharge path, and the waiting section 15 is not shown in Figure 1 The nozzle moving section 2 has a camera 23, an arm 21 supporting the nozzle 31, and a moving mechanism 22 elevating and horizontally moving the arm 21. The camera 23 is provided to the arm 21 and moves together with the nozzle 31. Moreover, the camera 23 can take an image of the flow path provided inside the nozzle 31 from the outside of the nozzle 31.

[0042] Next, the structure of the piping system 3 will be described. Furthermore, in order to avoid complication of the description, the piping system 3 is shown in the drawing in a simplified manner compared to the actual structure. The piping system 3 includes the above-described nozzle 31, pipes, valves, and a tank, and a flow path system is constituted by flow paths within each pipe, each valve, the nozzle 31, and the tank that constitute the piping system 3.

[0043] The downstream end of the pipe 32 that constitutes the piping system 3 is connected to the above-described nozzle 31. The upstream side of the pipe 32 is connected to the bottom of the tank 34 in turn via the valve VI, the filter 33, the valve V2, and the valve V3. The upper portion of the tank (reservoir) 34 is connected to the downstream end of the pipe 35, and the upstream side of the pipe 35 is connected to the resist bottle RB that stores the resist via the valve V4 and is immersed in the liquid phase within the bottle. The pipes 32, 35, and the tank 34 connect the resist bottle RB that is the supply source of the processing liquid to the nozzle 31 that is the supply portion of the resist, to form a supply path for supplying the resist to the wafer W. The resist is supplied from the resist bottle RB to the tank 34 to store the resist in the tank 34, and the resist within the tank 34 is supplied to the nozzle 31.

[0044] The resist bottle RB is connected to the downstream end of the pipe 36, and the gas phase within the resist bottle RB is opened to the atmosphere. Furthermore, the upstream end of the pipe 36 is connected to the supply source 37 of N2(gas) that constitutes a purge gas supply portion via the valve V5. By opening and closing the valve V5, the supply and interruption of the N2gas to the downstream side of the pipe 36 is controlled, and by the supply of the N2gas, the resist bottle RB is pressurized, and the resist is pressurized and transported to the downstream side of the piping system 3. Furthermore, the resist bottle RB can be replaced by a thinner bottle TB that stores a thinner instead of the resist, to implement a recovery process from abnormality described later, and in the case where the thinner bottle TB is installed in the piping system 3, the thinner is pressurized and transported to the downstream side.

[0045] The above-described filter 33 is constituted by a filter body that is constituted by a filter paper or the like that is provided within a housing to trap foreign matter, and the housing that forms a flow path of the fluid. The filter 33 is connected to one end of a pipe (vent pipe) 41 to be able to remove gas that is trapped within the filter 33, and the other end of the pipe 41 is connected to a drain path of a factory in which the resist coating apparatus 1 is provided via the valve V6. The filter 33 is constituted to be detachable from the piping system 3 to implement the recovery process from abnormality described later. The upper portion of the tank 34 is connected to one end of a pipe 42 to be able to remove gas that is trapped within the tank 34, and the other end of the pipe 42 is opened to the atmosphere via the valve V7.

[0046] In addition, a pipe 43 that connects the N2gas supply source 37 that constitutes the purge gas supply portion to a portion of the pipe 35 that is on the downstream side of the valve V4 is provided, and a valve V8 is provided in the pipe 43. Thus, it is possible to supply N2gas to the inside of the tank 34 by bypassing the resist bottle RB.

[0047] Furthermore, one end of pipe 45 is connected between valve V1 and filter 33 in pipe 32. The other end of pipe 45 is connected sequentially between valves V2 and V3 in pipe 32 via pressure sensor 46, valve V9, pump 47, and valve V10. Pump 47 is, for example, a diaphragm pump, in which the volume of fluid storage space 49 changes according to the deformation of diaphragm 48, thereby drawing in and ejecting fluid. The expansion and contraction speeds of storage space 49 can be freely adjusted, as can the pressure applied to storage space 49 when it contracts (i.e., the ejection pressure of pump 47). The expansion speed, contraction speed, and ejection pressure are controlled by control unit 5, which will be described later.

[0048] With the corrosion resist stored in tank 34, only valves V3 and V10 of each valve V are opened, and pump 47 is used to draw in the corrosion resist. Next, valve V3 is closed, valves V1 and V2 are opened, and the corrosion resist is sprayed from pump 4, as follows: Figure 2 As shown, resist is ejected from nozzle 31 and supplied to the center of wafer W on rotary chuck 12. Wafer W rotates, thereby supplying resist to the entire surface of wafer W through spin coating to form a resist film. For ease of explanation, the operation of processing wafer W in this way is referred to as a processing step. Furthermore, in the above-described... Figure 2 In the figures representing piping system 3 described later, the areas where fluid flows are shown in bold.

[0049] Additionally, a circulation path consisting of a portion of piping 32 and piping 45, in which pump 47 and filter 33 are installed, is formed. During the normal waiting state without any processing steps, the resist circulates in this circulation path, whereby foreign matter is captured by filter 33. Specifically, by switching the opening and closing of valves V2, V9, and V10, and by repeating the suction and ejection actions of pump 47, a circulation flow is formed, causing the resist to sequentially pass through pump 47, valves V10 and V2, filter 33, and valve V9 before re-entering pump 47. For ease of explanation, the operation during this waiting state is defined as a circulation step.

[0050] like Figure 1As shown, the resist coating apparatus 1 is provided with a control section 5 constituted by a computer. The control section 5 is provided with a program 51, an operation section 52, a notification section 53, and a memory 54. The program 51 sends control signals to control opening and closing of the respective valves V and operation of the pump 47. The respective steps in the normal time described above and steps constituting part of a recovery procedure for recovery from an abnormality are implemented in accordance with the control signals. The recovery procedure for recovery from an abnormality includes a step of purging the piping system 3 and a step for filling the piping system 3 with resist, and the recovery procedure for recovery from an abnormality will be described in detail later. The program 51 described above is installed in a storage medium such as an optical disk, a hard disk, a memory card, a DVD, or the like. The program 51 also performs various determinations and the like described later.

[0051] The operation section 52 is constituted by, for example, a touch panel, a mouse, or the like. The user of the apparatus makes an instruction to start a step constituting part of the recovery procedure for recovery from an abnormality by performing a prescribed operation by means of the operation section 52. That is, the user can make a selection of whether or not to start the step by means of the operation section 52. The notification section 53 is constituted by, for example, a display, and after the end of each step constituting the recovery procedure, the notification section 53 displays a screen indicating the end of each step constituting the recovery procedure to notify the user of the apparatus. In addition, as the notification section 53, a structure that notifies by sound constituted by a speaker or the like is also possible, for example, instead of such a structure that performs display of a screen. The memory 54 stores image data acquired by the camera 23. In addition, the memory 54 stores data for controlling the opening and closing sequence of the respective valves V and the operation sequence of the pump 47 for implementing each step of the recovery procedure.

[0052] Next, the recovery procedure for recovery from an abnormality (abnormality elimination process) described above will be described. During repeated processing of the wafer W, an abnormality in which resist flowing in the piping system 3 is supplied to the wafer W with particles due to some cause and particles are left in the resist film sometimes occurs. The resist coating apparatus 1 is constituted so as to be able to implement the recovery procedure when such an abnormality is confirmed by checking the processed wafer W, for example.

[0053] Figure 3The steps constituting the recovery process are shown in order. When the outline of the recovery process is explained, after the resist is removed from the piping system 3, the cleaning process (cleaning step) of sequentially supplying the diluent (cleaning liquid) as the solvent of the resist, N2 gas to the piping system 3 is performed. Thereafter, the piping system 3 is filled with the resist again, and is set to a state in which the reprocessing of the wafer W can be performed. The filling again is performed in a manner that the resist is circulated in the piping system 3 at different speeds in each step, to efficiently remove the bubbles from the piping system 3, the diluent used in the cleaning process. That is, the recovery process is constituted by the steps of circulating the fluid in the piping system 3 in different manners (the kind of the fluid or the flow rate of the fluid).

[0054] When the state in which the filter 33 is provided to the piping 32 is maintained while the above-described cleaning process is performed, it is difficult to sufficiently increase the flow rates of the cleaning liquid, N2 gas each on the downstream side of the filter 33 due to the pressure loss in the filter 33. That is, it is possible that the sufficient cleaning effect cannot be obtained. Therefore, the filter 33 is detached from the piping system 3 before the cleaning process is performed, and the dummy filter 30 is installed to the piping system 3 in place of the filter 33. The dummy filter 30 is, for example, the same structure as the filter 33 except that the filter main body such as a filter paper is not provided. When the same fluid is caused to flow from the upstream side to the downstream side in the piping 32 under the same condition, in the case where the dummy filter 30 is provided and in the case where the filter 33 is provided, by not having the filter main body, the state in which the pressure loss is small in the case where the dummy filter 30 is provided (cleaning state) is set. As such, the cleaning state refers to the state in which the pressure loss is small when the same fluid is caused to flow under the same condition. Further, regarding the dummy filter 30 as the flow path forming member, it is possible to set the pressure loss to be small (that is, the state in which the flow path resistance is small) as compared with the case where the filter 33 is provided, and it is possible to form the flow paths of the diluent and N2 gas, and the shape of the dummy filter 30 is arbitrary.

[0055] The filter 33 is installed to the piping system 3 again after the cleaning process of the piping system 3, and before the piping system 3 is filled with the resist again, to perform the reuse. The filter 33 is also detached at the time of the purge, in order to save the time when the reuse of the filter 33 is performed. When described specifically, when the filter 33 is detached from the piping system 3, the filter 33 is used until it is detached, and thus the filter main body (filter paper) of the filter 33 is in a state in which it is impregnated with the resist. If the diluent and N2 gas are supplied while the state in which the filter 33 is installed to the piping system 3 is maintained at the time of the cleaning process, it is necessary to impregnate with the resist again at the time of the reuse of the filter 33, and it is necessary to perform the liquid passage of the resist for a long time to remove the bubbles from the filter 33. By performing the cleaning process as described above by replacing the filter 33 with the dummy filter 30, these problems are prevented.

[0056] The following describes the steps that constitute the recovery process. For example... Figure 3 As shown, the recovery process includes the following steps: dummy filter installation (S1), resist drying (S2), diluent bottle installation (S3), cleaning (S4), diluent drying (S5), filter installation (S6), resist bottle installation (S7), resist introduction (S8), resist purging (S9), and spray status check (S10). Each step S is performed in this order. Regarding the cleaning step S4, as already described, it involves sequentially supplying diluent and N2 gas, and therefore includes a diluent supply step S41 and a diluent purging step S42.

[0057] For example, the resist drying step S2, cleaning step S4, thinner drying step S5, resist introduction step S8, resist purging step S9, and spray status check step S10 are automatically performed according to the control signal output from the control unit 5. That is, the processing in each step is automatically performed by controlling the opening and closing sequence of each valve V and the operation sequence of the pump 47 according to the control signal. For each of the above automatically performed steps, when the step ends, the notification unit 53 notifies the user that the step has ended. The user then proceeds to the next step based on this notification. Specifically, when the next step is not automatically performed, it is performed by the user. When the next step is automatically performed, it begins automatically by the user issuing a prescribed instruction via the operation unit 52.

[0058] Then, refer to Figures 4-13 The steps S constituting the recovery process will be explained in detail in sequence. The user, using the operation unit 52, indicates the start of the recovery process, i.e., the start of the dummy filter installation step S1. If the above-described processing steps or cyclic steps are being performed, these steps are stopped due to this start indication, and the nozzle 31 is located in the waiting area 15. The user removes the filter 33 from the piping system 3 and installs the dummy filter 30 on the piping system 3 in place of the filter 33. The ventilation pipe 41 connected to the filter 33 is then reconnected to the dummy filter 30. Figure 4 ).

[0059] When the pseudo-filter installation step S1 ends like this, and the user performs a prescribed operation with the aid of the operation section 52, the resist drying step S2 is started. In this step S2, the valve V8 is opened to bypass the resist bottle RB, and N2 gas is supplied from the N2 gas supply source 37 to the piping system 3 via the tank 34. The other valves V also become prescribed open / close states, and N2 gas is supplied from the tank 34 to other parts of the piping system 3. For example, the open / close states of the valves V other than the valve V8 are changed according to the elapsed time from the time point at which the step S2 is started, and N2 gas is sequentially supplied to each part constituting the piping system 3. By the supply of N2 gas, the resist remaining in the piping system 3 is washed away and removed from the piping system 3 via the nozzles 31, the piping 42 connected to the tank 34, and the piping 41 connected to the pseudo-filter 30, respectively. Thus, the resist is removed not only from the flow paths in each piping but also from the inside of the tank 34. Furthermore, the resist of a part of the piping system 3 is exposed to N2 gas and dried, and thus remains on the wall surface constituting the piping system 3.

[0060] When an example in the execution of the step S2 is shown, the state in which the valves V1 to V3 are opened to circulate N2 gas in the piping 32 and then released from the nozzles 31 is shown in FIG. 6. Figure 5 By the circulation of N2 gas, the resist is removed from the piping 32 and the tank 34, and is released from the nozzles 31. The inside of the piping 32 and the inside of the tank 34 after the resist is removed like this are dried by the action of N2 gas. Furthermore, as described above, the opening / closing of the valves V is switched according to the elapsed time, and thus N2 gas is also supplied to the piping 45 and the like which are not shown as components to which N2 gas is supplied in the figure.

[0061] As for each valve V, when a prescribed open / close sequence has elapsed, the valve V8 is closed to stop the supply of N2 gas from the N2 gas supply source 37, and the intention that the step S2 is ended is notified. Thereafter, the resist bottle RB is removed from the piping system 3 by the user, and a diluent bottle TB filled with a diluent which is a solvent of the resist is installed as a substitute. That is, the above-described diluent bottle installation step S3 is performed. Figure 6

[0062] Thereafter, the cleaning step S4 is started in accordance with the instruction of the user from the operation section 52. More specifically, the diluent supply step S41 constituting this cleaning step S4 is started. When described in detail, the valve V5 is opened to supply N2 gas to the diluent bottle TB which is a cleaning liquid supply source, and the valves V4 and V7 are opened to store the diluent in the tank 34. Figure 7

[0063] ​​Next, the valves V4, V5, V7 are closed to stop the filling of the diluent to the tank 34, the valve V8 is opened to bypass the diluent bottle TB, and the N2 gas is supplied from the N2 gas supply source 37 to the tank 34. The other valves become the prescribed open / close states, and the diluent is supplied from the tank 34 pressurized by the N2 gas to the downstream side of the pipe system 3. The open / close states of the valves V on the downstream side of the tank 34 are changed according to the elapsed time from the start time point of the step S41, and the diluent is sequentially supplied to each portion constituting the pipe system 3, and then removed from the pipe system 3 via the nozzle 31, the pipes 41, 42. Thus, the resist remaining in the pipe system 3 is dissolved by the diluent, and removed from the pipe system 3 together with the diluent.

[0064] Figure 8 The state of the apparatus during a certain period in the execution of the step S41 is shown. During this period, the valves V1 to V3, V8 are opened, and the diluent is circulated in the pipe 32 and then discharged from the nozzle 31. The state in which the pseudo filter 30 is provided instead of the filter 33 on the pipe 32 (purging state) is set, and as described above, the pressure loss of the diluent caused by the pseudo filter 30 is low. Thus, in the pipe 32, the diluent flows at a relatively high flow rate on both the upstream side and the downstream side of the pseudo filter 30. Thus, the resist remaining on both the upstream side and the downstream side of the pipe 32 is washed away by the diluent acting on the resist with a relatively large pressure, and then removed from the nozzle 31 together with the diluent. As such, the flow rate of the diluent circulated in the pipe 32 is higher than the flow rate of the resist in the pipe 32 when the resist is ejected from the nozzle 31 in the processing step. Further, as described above, the open / close states of the valves are switched in the execution of the step S41, and thus the diluent is also circulated in each pipe other than the illustrated pipe 32, and then discharged from the pipe system 3.

[0065] After the valves V pass through the prescribed opening and closing sequence, the diluent is supplied to fill the entire piping system 3. In addition, all of the diluent is released from the tank 34. Then, the valve V8 is closed, the supply of N2 gas to the tank 34 from the N2 gas supply source 37 is stopped, and the end of step S41 is notified. Thereafter, when the diluent purge step (cleaning liquid purge process) S42 is started in accordance with an instruction from the user of the operation section 52, the valve V8 is opened again, the diluent bottle TB is bypassed, and the supply of N2 gas to the tank 34 is performed. Then, the valves V on the downstream side of the tank 34 become prescribed opening and closing states, and N2 gas is supplied from the tank 34 to the other portions of the piping system 3. As with the steps already described, the opening and closing states of the valves V change, and N2 gas is sequentially supplied to the portions that make up the piping system 3. By this supply of N2 gas, the diluent is removed from the piping system 3 via the nozzle 31, the piping 41, 42. When N2 gas is circulated in the piping system 3 like this, the resist that has not been removed cleanly in step S41, which adheres to the wall surface of the piping system 3, is pressurized, peels from the wall surface, and is removed from the piping system 3 together with the diluent.

[0066] Figure 9 The state of the apparatus during a certain period in the execution of step S42 is shown. During this period, the valves V1 to V3 are opened, and N2 gas is circulated in the piping 32 and then supplied to the nozzle 31. As with step S41, the piping 32 is provided with the pseudo filter 30 in this state, and thus the pressure loss of N2 gas caused by the pseudo filter 30 is low, as described above. Thus, in the piping 32, the diluent flows at a relatively high flow rate on both the upstream side and the downstream side of this pseudo filter 30. As a result, the removal of the resist and the diluent described above is performed efficiently. The flow rate of N2 gas circulated in the piping 32 is higher than the flow rate of the resist in the piping 32 when the resist is ejected from the nozzle 31 in the processing step, like this. Furthermore, as described above, the opening and closing states of the valves are switched during the execution of step S42, and thus N2 gas is also supplied to each of the piping other than the illustrated piping 32 to remove the diluent.

[0067] With regard to each of the valves V, when a prescribed opening and closing sequence is passed through, each of the valves V is closed, and the end of step S42 is notified. Then, in accordance with an instruction from the user of the operation section 52, the diluent drying step S5 is started. Specifically, the valve V5 is opened, and N2 gas is supplied to the diluent bottle TB. The other valves V become prescribed opening and closing states, and N2 gas is supplied from the diluent bottle TB to the other portions of the piping system 3. Furthermore, at the start time point of this step S5, for example, the diluent bottle TB is empty due to the execution of step S41 described above. As with the other steps S, the opening and closing states of each of the valves V other than the valve V5 change in accordance with the elapsed time from the start time point of step S42, and N2 gas is sequentially supplied to the portions that make up the piping system 3. By this supply of N2 gas, the diluent that adheres to the wall surface of the flow path dries.

[0068] As for the valves V, when a prescribed opening and closing sequence is passed through, each of the valves V including the valve V5 is closed, the supply of N2 gas from the N2 gas supply source 37 is stopped, and the step S5 ends, and the fact that the step S5 ends is notified. Thereafter, the dummy filter 30 is removed from the piping system 3 by the user, and the filter 33 removed in the step S1 is installed again as a replacement on the piping system 3. That is, the filter installation step S6 as a release process for releasing the cleaning state is performed. Next, the diluent bottle TB is removed from the piping system 3 by the user, and the resist bottle RB removed in the step S3 is installed again on the piping system. That is, the resist bottle installation step S7 is performed. Figure 10 ).

[0069] Then, when a prescribed operation is performed by the user with the aid of the operation section 5, the resist introduction step S8 (treatment liquid filling process) is started. When described in detail, the valve V5 is opened to supply N2 gas from the N2 gas supply source 37 to the resist bottle RB, and the other valves V are switched in the opening and closing state in accordance with the time from the start of the step as in the respective steps S already described. Thereby, the resist supplied from the resist bottle RB is filled into the tank 34 and the piping 32, 45. Figure 11 The appearance when the valves V1 to V4 are opened to circulate the resist filled into the tank 34 and the piping 32 is shown, and the resist circulating in the piping 32 is discharged from the nozzle 31.

[0070] When the valves V pass through a prescribed opening and closing sequence so that the resist is filled into the piping system 3 as described above, the valve V5 is closed, the supply of N2 gas from the N2 gas supply source 37 to the resist bottle RB is stopped, and the step S7 ends, and the fact that the step S7 ends is notified. Then, when a prescribed operation is performed by the user with the aid of the operation section 52, the resist purge step S9 (treatment liquid purge process) is started. When this step S9 is described in detail, the resist is sucked from the tank 34 with the pump 47 in a state where the valves V3, V10 are opened. Next, the valve V3 is closed and the valves V1, V2 are opened, and the resist is supplied to the nozzle 31 via the filter 33 by the ejecting action of the pump 47, and the resist is discharged from the nozzle 31. The pump 47 continuously performs the action to circulate the resist in the piping system 3 all the time in the execution of the step S9 by such ejection from the pump 47.

[0071] Figure 14 The appearance in which the storage space 49 changes in the step S9 and the other steps is schematically shown to show the difference in the action of the pump 47 performed in the respective steps. Figure 14The upper section of FIG. 9 indicates the change in the volume of the storage space 49 in step S9. As shown here, in step S9, the pump 47 is operated in such a manner that the storage space 49 is slowly and continuously contracted after suction is performed. Thereby, for example, the flow rate of the resist in the piping system 3 is, for example, 0.1 mm / sec to 0.5 mm / sec.

[0072] Figure 14 The middle section of FIG. 9 indicates the change in the volume of the storage space 49 when the pump 47 is operated once after the resist is maximally sucked (i.e., when one wafer W is processed). When the pump 47 is operated multiple times (i.e., when multiple wafers W are processed), the volume of the storage space 49 is gradually reduced as in step S10 described later. Figure 2 The lower section of FIG. 9 indicates the change in the volume of the storage space 49 when the processing step is performed. In the processing step and each step of step S9, the resist application device 1 is the same structure, and the resist is circulated in the same path. However, in step S9, the pump 47 is operated as described above, and thereby the speed of contraction of the storage space 49 is lower in step S9 than in the processing step. Thus, the flow rate of the resist in the flow path from the pump to the nozzle 31 at the time of ejection from the pump is lower in step S9 than in the processing step. Further, in the processing step, the pump 47 is operated in such a manner that the storage space 49 is maximally contracted, and thereby the flow rate of the resist in the flow path is higher than in step S9. Thus, in the processing step, the flow rate of the resist in the flow path is higher than in step S9. Figure 14 The middle section of FIG. 9 indicates an example of the change in the volume of the storage space 49 when the pump 47 is operated once after the resist is maximally sucked (i.e., when one wafer W is processed). When the pump 47 is operated multiple times (i.e., when multiple wafers W are processed), the volume of the storage space 49 is gradually reduced as in step S10 described later.

[0073] This step S9 is a step of removing the diluent remaining in the piping 32, 45 by circulating the resist. By removing the diluent like this, the diluent is prevented from being supplied to the wafer W as particles when the processing step is started again. As described above, in this step S9, the resist is circulated in the piping system 3 at a very low speed. The reason for this is described below.

[0074] The piping 32, 35 is, for example, curved. For example, it is provided as shown in FIG. 10 so that the diluent (indicated as T) remains in the corner portion of the curved piping 32, 35. Figure 15 When it is assumed that the flow rate of the resist is high, it is possible that the resist flows concentrated in a part of the corner portion, and the other part of the corner portion is not sufficiently supplied with the resist. That is, as shown in FIG. 11, it is possible that the diluent T remains after the end of step S9 without being washed away by the resist. Figure 15 Thus, as described above, the flow rate of the resist is reduced, and thereby, as shown in FIG. 12, the resist is caused to sufficiently circulate to the entire corner portion, and the replacement of the portion where the diluent T remains to the resist is promoted. Further, an example of the curved portion of the piping is given, but a region where the flow path inside the valve V or the like is narrow is also the same as the curved portion in that, when the flow rate of the resist is high, the flow of the resist inside the flow path is likely to be biased, and thus it is considered that it is effective to cause the resist to flow at a low flow rate like this to discharge the diluent. Figure 16

[0075] ​Furthermore, as described above, in step S8 prior to step S9, the resist is pressurized and transported using N2 gas. Assume that the flow rate of the resist in the piping system 3 is measured at each step in S8 and S9. Assume the measurement location is the same between steps S8 and S9, specifically, for example, any location on the piping 32. Due to the operation of the pump 47, the flow rate of the resist in step S9 is lower than that in step S8. That is, in steps S8 and S9, the resist is flowed at a relatively high flow rate and at a relatively low flow rate.

[0076] In step S8 described above, the resist is circulated at a high flow rate, thereby applying high pressure to the flow path and efficiently removing foreign matter, such as the diluent. Subsequently, as described above, in step S9, the resist is circulated at a low flow rate, thereby removing any diluent that was not completely removed in step S8. In other words, by circulating the resist at different flow rates in steps S8 and S9, foreign matter can be removed more reliably from the piping system 3. Furthermore, the flow rate comparison between these steps is assumed to be a comparison of the highest flow rate achieved during the execution of the step. Therefore, for example, it is not a comparison between the flow rates of the resist at a state where sufficient speed cannot be obtained at the beginning of the step.

[0077] When the pump 47 has repeated its operation a predetermined number of times since the beginning of step S9, step S9 ends, and a notification is sent indicating the end of step S9. Afterwards, when the user performs a predetermined operation using the operation unit 52, step S10 for checking the ejection status begins. Specifically, this involves checking the ejection status with the user... Figure 2 The same processing steps are described, involving the operation of each valve and pump 47 to spray the corrosion inhibitor from nozzle 31. Figure 13 Therefore, the volume of the storage space 49 of pump 47 is as follows: Figure 14 The process changes as shown in the middle section. However, unlike during the processing steps, resist is sprayed onto the waiting section 15 instead of onto the wafer W. After the resist is sprayed onto the waiting section 15, the camera 23 takes an image, and the control unit 5 detects the height H1 of the resist liquid level in the flow path within the nozzle 31 based on the acquired image data. This resist spraying and the detection of the liquid level height based on the image data are defined as an inspection step.

[0078] also, Figure 17An example of this image is shown schematically. When the resist in the piping system 3 contains air bubbles, and such air-bubbly resist is supplied to the wafer W, defects in the resist film may sometimes occur due to these air bubbles. When a large number of air bubbles are present in the resist in the piping system 3 as described above, the height H1 of the liquid level in the nozzle 31 may sometimes deviate from the normal height range H2. The control unit 5 performs a determination step based on the detected liquid level height H1 to determine whether there are air bubbles in the resist of the piping system 3. As long as the height H1 converges within the preset normal range, the user is notified that the recovery process has ended as there is no abnormality. In the case where the height H1 deviates from the normal range, a response action to remove the air bubbles is performed as if the resist contains air bubbles.

[0079] As a response action described above, a resist ejection action is performed that is substantially the same as the processing step. However, in this response action, a higher pressure is applied to the resist in the storage space 49 for a shorter period of time compared to the processing step. Specifically, the ejection pressure of this response action is higher than the ejection pressure during the execution of the processing step, and a pressure of, for example, 100 kPa to 300 kPa is applied to the storage space 49 to eject the resist. Figure 14 The lower paragraph describes how the storage space 49 changes during the execution of the response action. For example... Figure 14 As shown in the lower section, the storage space 49 is subjected to a high pressure as described above, resulting in a larger contraction amount (contraction rate) per unit time compared to the execution of the processing step. Therefore, the contraction rate of the storage space 49 is: contraction rate in the response action of step S10 > contraction rate in the processing step > contraction rate in step S9. By operating the pump 47 in this way during the response action, the resist is circulated in the piping system 3 at a higher flow rate than during the execution of the processing step and then ejected (discharged) from the nozzle 31. Furthermore, in this response action, the target of the resist ejection is not the wafer W, but for example, the waiting section 15.

[0080] Figure 18 The diagram schematically illustrates the flow of the resist in the section from pump 47 in piping system 3 to nozzle 31 (i.e., pipes 32, 45) through the aforementioned response action. As the resist flows through this section of the flow path, turbulence is created due to the high flow velocity. This turbulence washes away air bubbles B trapped in bends, etc., removing them along with the resist towards nozzle 31. For example, by repeatedly and intermittently applying such short bursts of high pressure using pump 47, the resist can be more reliably agitated, thus flushing away air bubbles B.

[0081] When the above-described ejection of the resist as a countermeasure is performed a prescribed number of times, the above-described checking step for detecting the liquid level height Hl of the nozzle 31 is performed again to determine whether or not there is an abnormality. As long as the liquid level height Hl converges within the normal range H2, the end of the recovery process is notified to the user by the notification section 53. In the case where the height Hl deviates from the normal range, as bubbles remain in the resist, the above-described ejection of the resist as a countermeasure is performed a prescribed number of times again, and then the checking step is implemented. After the recovery process ends, the processing step and the loop step that have been described are implemented again, and the wafer W is processed to form a resist film.

[0082] According to the above-described resist coating apparatus 1, by implementing the recovery process, it is possible to suppress particles from being supplied to the wafer W together with the resist. That is, it is possible to prevent defects due to the particles remaining in the resist film, and thus it is possible to prevent a decrease in the yield of semiconductor products. As for the recovery process, as described above, the diluent and the N2 gas are supplied in that order in the state where the pseudo filter 30 is installed on the piping system 3. Thereby, even if high pressure is not applied to the diluent and the N2 gas respectively, it is possible to sufficiently increase the flow rate of the diluent and the flow rate of the N2 gas in the piping 32 respectively. As a result thereof, it is possible to remove foreign matter in the piping system 3 with high reliability in a short time.

[0083] In addition, the step S9 is executed when the resist is circulated in the piping system 3, but as described above, the step S8 of circulating the resist at a higher flow rate than the step S9 is performed before the step S9. By circulating the resist at different flow rates like this, it is possible to more reliably and quickly remove particles from the piping system 3, and thus it is preferable.

[0084] In addition, the steps that constitute a part of the recovery process are automatically performed by the control section 5 sending a control signal. Thereby, it is possible to eliminate a difference in skill among users who perform the recovery process. Thus, it is possible to suppress a difference in the required time among users from when the recovery process is started to when the recovery process ends, and it is possible to quickly perform the recovery process. In addition, the work of the user who implements the recovery process is reduced.

[0085] However, the steps described as automatically performed like this can also be processed without being performed automatically like this. That is, the opening and closing instructions of the valves V and the operation instructions of the pump 47 can also be performed manually by the user with the aid of the operation section 52. That is, the steps can be performed by outputting control signals corresponding to the instructions to each section of the apparatus each time the instructions are given. In addition, in the case where the steps are performed by the user like this, for example, for the ejection state checking step S10, the user can visually check the resist in the nozzle 31 or the resist supplied from the nozzle 31 to the wafer W to determine the presence or absence of bubbles, thereby performing the selection of whether to perform the above-described countermeasures.

[0086] In addition, for example, it is assumed that a pressure sensor is provided at a position in the pipe 32 on the downstream side of the filter 33. When the resist is ejected from the nozzle 31 via the pipe 32, if the resist contains bubbles, the pressure detected by the pressure sensor becomes small. Thus, it is also assumed that, in the step S10, the determination using the pressure sensor is performed instead of the determination using the camera 23. Specifically, for example, as with the above-described checking step, by ejecting the resist from the nozzle 31 and monitoring the pressure at that time, it is detected whether bubbles are present. If the pressure is lower than a reference value, it is determined that the resist contains bubbles, that is, that the resist is abnormal. That is, in the step S10, the decision of whether to perform the countermeasures is not limited to being based on the image data. In addition, it is assumed that the above-described countermeasures are performed based on the result of the abnormality determination, but it can also be assumed that the above-described countermeasures are performed a prescribed number of times regardless of such a result.

[0087] In the above-described recovery procedure, it is described that, in the case where the next step S is automatically performed after one step S is automatically performed, the start of the next step S is instructed by the user, but it can also be assumed that the next step S is automatically started. That is, for example, the steps S8 to S10 are steps that are automatically performed, and these steps S can also be automatically performed consecutively without being instructed by the user.

[0088] In addition, in the above-described resist purge step S9, in the example already described, the pump 47 is caused to operate in such a manner that the flow rate of the resist is fixed, but it can also be set to be different. That is, the pump 47 can also be caused to operate in such a manner that the flow rate of the resist during one period of the execution of the step S9 is different from the flow rate of the resist during another period. As described above, if the flow rate is slow, the resist can be caused to sufficiently spread to each portion of the flow path, and if the flow rate is high, a strong pressure can be applied to the particles in the flow path, so by supplying the resist at different flow rates like this, the particles can be removed more reliably. Furthermore, the flow rate of the resist is not limited to being changed in two stages like this, but the flow rate of the resist can also be changed in more stages.

[0089] In addition, in the above-described resist purge step S9, in the example already described, the pump 47 is caused to operate in such a manner that the flow rate of the resist is fixed, but it can also be set to be different. That is, the pump 47 can also be caused to operate in such a manner that the flow rate of the resist during one period of the execution of the step S9 is different from the flow rate of the resist during another period. As described above, if the flow rate is slow, the resist can be caused to sufficiently spread to each portion of the flow path, and if the flow rate is high, a strong pressure can be applied to the particles in the flow path, so by supplying the resist at different flow rates like this, the particles can be removed more reliably. Furthermore, the flow rate of the resist is not limited to being changed in two stages like this, but the flow rate of the resist can also be changed in more stages.

[0090] As with the step S41, in the above-described diluent purge step S42, it can also be set to be different for each period in this step S42. In this case, as with the step S41, it is also possible to supply the N2 gas at a low flow rate and then at a high flow rate. In adjusting the flow rate of the N2 gas like this, for example, it is only necessary to adjust the opening degree of the above-described valve V8. In addition, it can also be that, as with the resist purge step S9, the flow rate of the fluid is also caused to change in more than two stages for this diluent purge step S42 and the diluent supply step S41.

[0091] Next, the use of the above-described diluent purge step S42 will be described. Figure 19An antireflection agent coating device 61 as a modification example of the antireflection agent coating device 1 will be described. As a difference between the antireflection agent coating device 61 and the antireflection agent coating device 1, a pipe 62 for supplying fluid to the downstream side of the pipe 32 bypassing the filter 33 can be cited. One end of the pipe 62 is connected between the filter 33 and the valve V2 in the pipe 32. The other end of the pipe 62 is connected between the valve Vl l and the position of the connection pipe 45 in the pipe 32. The valve V12 and the valve V13 are provided on the one end side and the other end side of the pipe 62, respectively.

[0092] In the antireflection agent coating device 61, as an alternative to the replacement of the filter 33 with the dummy filter 30, the diluent and the N2 gas are circulated to the pipe 62 in this order to bypass the filter 33, and thus the above-described cleaning step S4 is performed. Except for the case of bypassing the filter 33, the valves V12 and V13 are closed. The pipe 62 is configured so that the pressure loss of fluid in the case of passing through the pipe 62 is smaller than the pressure loss of fluid in the case of passing through the filter 33. Thus, when the diluent and the N2 gas are supplied to the pipe system 3 to perform the above-described cleaning step S4, it is not limited to the removal of the filter 33.

[0093] Figure 20 An antireflection agent coating device 63 as a modification example of the antireflection agent coating device 1 will be described. As a difference between the antireflection agent coating device 63 and the antireflection agent coating device 1, a bubble sensor 64 can be cited, which is provided at a position on the downstream side of the valve V6 in the pipe 41 connected to the dummy filter 30. In the antireflection agent coating device 63, in the above-described diluent supply step S41, for example Figure 20 as shown, the diluent is supplied from the tank 34 to the downstream side of the pipe system 3, for example, so that the diluent is filled into the pipes 45 and 32 at the same time. With the passage of time of this step S41, the storage space 49 of the pump 47 is gradually expanded. That is, the storage space 49 is expanded in correspondence with the progress of the filling of the diluent into the pipe system 3.

[0094] The expansion of the storage space 49 is performed to increase the area of the wall surface forming the storage space 49 that contacts the diluent, thereby improving the cleanliness of the piping system 3 based on the cleaning. When described in more detail, it is assumed that the diluent is supplied to the piping system 3 constantly in a state where the volume of the storage space 49 is large, to increase the flow rate of the diluent in the pump 47. In this case, it is considered that the diluent passes only in the lower portion of the storage space 49 due to gravity, and the wall surface of the upper side of the storage space 49 does not contact the diluent. In this case, as described above, the storage space 49 is set to a small state at the beginning of the step S41, so that the diluent contacts the entire wall surface of the storage space 49, and thereafter, the storage space 49 is expanded as described above. Thus, the filling rate of the diluent in the storage space 49 is increased, and the entire wall surface or a large portion of the wall surface forming the storage space 49 is cleaned by contacting the diluent.

[0095] As described above, the supply of the N2 gas to the diluent bottle TB and the expansion of the storage space 49 are performed in parallel, and after a predetermined time elapses, the supply of the diluent from the tank 34 is stopped. Then, the ejection operation of the pump 47 is performed, and the diluent is supplied to the bubble sensor 64 via the piping 45, the pseudo filter 30, and the piping 41 in this order, to detect the presence or absence of a bubble (S43). Figure 21 ).

[0096] In the case where a bubble is detected, it is determined that the filling of the diluent is insufficient, and the supply of the diluent from the tank 34 to the downstream side of the piping system 3 is performed again (S44). Then, the storage space 49 is expanded again gradually in conjunction with the supply of the diluent. Thereafter, the detection of the bubble is performed again (S45). In the case where a bubble is not detected, the step S41 ends, and the next diluent purge step S42 is started. As described above, the start can be determined by the user or can be started automatically. By performing the determination on the filling state of the diluent in the piping system 3 using the bubble sensor 64 as described above, the diluent can be supplied reliably to the entire piping system 3, and the cleanliness of the piping system 3 can be improved. Figure 20 Figure 21 In the case where a bubble is detected, it is determined that the filling of the diluent is insufficient, and the supply of the diluent from the tank 34 to the downstream side of the piping system 3 is performed again (S44). Then, the storage space 49 is expanded again gradually in conjunction with the supply of the diluent. Thereafter, the detection of the bubble is performed again (S45). In the case where a bubble is not detected, the step S41 ends, and the next diluent purge step S42 is started. As described above, the start can be determined by the user or can be started automatically. By performing the determination on the filling state of the diluent in the piping system 3 using the bubble sensor 64 as described above, the diluent can be supplied reliably to the entire piping system 3, and the cleanliness of the piping system 3 can be improved.

[0097] In addition, the tank 34 can be connected to the diluent supply mechanism so that the diluent can be filled in the tank 34 in the step S2 described above. In this case, it is assumed that, for example, after the purge of the resist in the piping system 3 is performed as described above in the step S2, the diluent is filled in the tank 34, and the diluent is supplied to each portion of the piping system 3 to perform the cleaning, as in the step S41. Thereafter, the N2 gas is supplied in a predetermined order from the upstream side of the piping system 3 to purge the diluent.

[0098] ​A part of the sequence is shown. For example, the valve V1 on the downstream side of the pseudo filter 30, the valves V9, V10 of the pipe 45 are closed, and the valve V6 of the pipe 41 of the pseudo filter 30 is opened. In this state, the resist bottle RB is bypassed to supply N2 gas to the tank 34, and N2 gas is supplied to the downstream side of the pipe 41 to remove the diluent in the path. Next, the valve V1 is opened, and the valve V6 of the pipe 41 of the pseudo filter 30 is closed, to remove the diluent in the path from the tank 34 to the nozzle 31. That is, as shown in Figure 9 N2 gas is supplied to perform purge. After N2 gas is supplied like this, the above-described step S3, steps S41, S42 are executed. Thus, in step S41, the diluent is supplied to the pipe to which N2 gas has been flowed.

[0099] Further, in the purge of the resist in step S2, and in each of steps S41, S42, it is explained that the supply of the fluid (N2 gas or diluent) is performed to each part of the pipe system 3 in order. In the supply of the fluid in order like this, for example, the supply of the fluid can be performed in the same order as the order of the supply of N2 gas at the time of the purge of the diluent in the above-described step S2.

[0100] In steps S2, S42, the resist or the diluent having a specific gravity larger than N2 gas is purged with N2 gas, and in the purge like this, N2 gas is supplied to each part of the pipe system 3 in order as described above. Thereby, N2 gas flows at a relatively high flow rate in the region to which it is supplied, and thus even if there is a difference in specific gravity between N2 gas and the resist and the diluent, the resist and the diluent can be removed more reliably and quickly as described above.

[0101] Further, in step S41, N2 gas is supplied to each part of the pipe system 3 in order as described above. Thereby, it is expected that the diluent flows at a relatively high flow rate, and thus the flow path to the nozzle 31, the pipe 32 is sufficiently washed even if it has a relatively narrow flow path. Furthermore, it is explained that N2 gas, the diluent are supplied to each part of the pipe system 3 in steps S2, S4 like this, but the N2 gas, the diluent can be supplied from the upstream side together.

[0102] As the liquid processing apparatus of the present disclosure, it is not limited to a structure in which a resist is applied to form a resist film. For example, the technology of the present disclosure can be applied to an apparatus in which a treatment liquid for forming an anti-reflection film is applied to form an anti-reflection film, an apparatus in which a treatment liquid for forming an insulating film is applied to form an insulating film, a developing apparatus in which a developing liquid is supplied to perform development, an apparatus in which an adhesive material for bonding a wafer W is supplied. Thus, the cleaning liquid is a cleaning liquid corresponding to the treatment liquid in the liquid processing apparatus, and is not limited to a diluent.

[0103] In addition, the flow constituted by the steps S1 to S10 described above is explained as a flow for recovering from an abnormality when an abnormality occurs in the process of the wafer W, but the flow can also be applied to a case where the apparatus is newly set up (assembled). In this case, for example, the impregnation of the filter 33 can be performed by another apparatus. Also, the technology of the present disclosure can be applied to a developing apparatus that supplies a developing solution to the wafer W, a device that applies an adhesive material for bonding the wafer W. As the pump, a diaphragm pump is exemplified, but the type of the pump is not limited, and for example, a bellows pump or the like can also be used. Furthermore, it should be considered that the embodiments of the present disclosure are illustrative in all respects and are not restrictive. The above-described embodiments can be omitted, replaced, changed, or combined in various ways without departing from the appended claims and the spirit thereof.

Claims

1. A method for operating a liquid treatment device, characterized in that, The process includes the following steps: The processing step involves using a pump installed in a flow path system that includes a supply path to flow the processing liquid from a processing liquid supply source to the downstream side of the supply path where a filter is installed, so that the processing liquid is supplied to the substrate from the supply section forming the downstream end of the supply path to process the substrate. The cleaning process involves supplying cleaning fluid to the flow path system to clean it. as well as The supply path cleaning process includes supplying cleaning fluid from upstream to downstream of the supply path in a cleaning state where the pressure loss of the fluid in the supply path is lower than that in the treatment process, to clean the supply path. The cleaning process includes an anomaly elimination process performed prior to the treatment process. The anomaly elimination process also includes the following steps: The process is terminated, and the cleaning state is terminated; The process fluid filling process is performed after the release process, wherein the process fluid is supplied from the process fluid supply source to the flow path system to fill the process fluid. as well as The processing fluid purging process is performed after the processing fluid filling process. The processing fluid is purged from the upstream side to the downstream side of the supply path using the pump at a flow rate lower than that of the processing fluid in the processing process, and then discharged from the supply section.

2. The method of operating the liquid treatment device according to claim 1, characterized in that, The anomaly elimination process includes a cleaning fluid purging process after the cleaning process, which involves supplying purging gas to the flow path system to purge the flow path. This cleaning fluid purging process includes supplying the purging gas from the upstream side to the downstream side of the supply path, which is in the cleaning state.

3. The method of operating the liquid treatment device according to claim 1, characterized in that, The treatment fluid filling process includes a process of circulating the treatment fluid in the flow path system at a flow rate higher than that in the treatment fluid purging process.

4. The method of operating the liquid treatment device according to claim 1, characterized in that, The anomaly elimination process also includes a pressurization process. The pressurization process is performed after the treatment fluid purging process, causing the pump to operate at a greater spray pressure than that in the treatment process, so that the treatment fluid flows from the upstream side to the downstream side of the supply path and is then discharged from the supply section.

5. The method of operating the liquid treatment device according to claim 4, characterized in that, The anomaly elimination process further includes a determination process after the treatment fluid purging process to determine whether there is an anomaly in the treatment fluid in the flow path system. The pressurization process is performed based on the determination result of the determination process.

6. The method of operating the liquid treatment device according to claim 5, characterized in that, The determination process includes the following steps: To acquire image data by photographing the processing liquid in the supply unit; and The determination of whether or not there is an anomaly is made based on the image data.

7. The method of operating the liquid treatment device according to claim 1, characterized in that, The treatment fluid purging process includes the process of circulating the treatment fluid at different flow rates during different periods.

8. The method of operating the liquid treatment apparatus according to any one of claims 1 to 7, characterized in that, The cleaning state refers to the state in which a flow path forming member is installed in the supply path in place of the filter.

9. The method of operating the liquid treatment apparatus according to any one of claims 1 to 7, characterized in that, The cleaning process includes the process of circulating the cleaning fluid at different flow rates during different periods.

10. The method of operating the liquid treatment apparatus according to any one of claims 1 to 7, characterized in that, The cleaning process further includes the following steps: supplying the cleaning fluid from the cleaning fluid supply source to the flow path system, and expanding the storage space of the cleaning fluid in the pump according to the filling progress of the cleaning fluid in the flow path system.

11. The method of operating the liquid treatment apparatus according to any one of claims 1 to 7, characterized in that, The cleaning process further includes the following steps: supplying the cleaning fluid to the bubble detection unit provided in the flow path system to detect the filling status of the cleaning fluid in the flow path system.

12. The method of operating the liquid treatment apparatus according to any one of claims 1 to 7, characterized in that, The piping system constituting the flow path system includes a storage unit for storing the processing liquid for carrying out the processing steps. The cleaning process further includes the following steps: supplying the cleaning fluid, which is stored in the storage section in place of the treatment fluid, to the flow path system, which has been supplied with purge gas for drying the flow path system.

13. A liquid treatment apparatus comprising, by means of a pump, supplying a treatment liquid from a treatment liquid supply source to a substrate from a supply section constituting the downstream end of a supply path included in a flow path system, characterized in that it includes: A flow path system, including the pump, wherein the flow path system is cleaned by a cleaning fluid before being supplied with the treatment fluid; The supply path can be configured to a cleaning state where the pressure loss of the fluid is lower than that of the fluid used when processing the substrate. In this cleaning state, the supply path is supplied with cleaning fluid from upstream to downstream for cleaning. The control unit outputs control signals to perform the following processing steps: in a state where the cleaning state has been released, the processing liquid is supplied to the substrate via a filter located in the supply path using the pump. The control unit outputs a control signal to perform a treatment fluid purging step, which constitutes an abnormality elimination process performed before the processing step. In the treatment fluid purging step, after the cleaning state is released and the treatment fluid supplied from the treatment fluid supply source is filled into the flow path system, the treatment fluid is discharged from the supply unit after flowing from the upstream side to the downstream side of the supply path at a flow rate lower than that of the treatment fluid in the processing step using the pump.

14. The liquid treatment apparatus according to claim 13, characterized in that, The control unit outputs a control signal to automatically perform at least one of a plurality of steps constituting an anomaly elimination process prior to the processing step, which involves allowing fluid to circulate in the flow path system in different ways.

15. The liquid treatment apparatus according to claim 14, characterized in that, The system includes a notification unit and an operation unit. The notification unit notifies the user of the end of a step before proceeding to the next step after the completion of the previous step. The operation unit performs operations to begin the next step.

16. The liquid treatment apparatus according to claim 14, characterized in that, Automatically performing one of the steps includes automatically performing the pump's action sequence or the opening and closing sequence of valves located in the flow path system.

17. The liquid treatment apparatus according to any one of claims 13 to 16, characterized in that, As part of the anomaly elimination process performed prior to the aforementioned processing steps, a purging step is included, following the cleaning step, supplying purge gas to the flow path system to purge the cleaning fluid from the flow path. The flow path system is connected to the purge gas supply unit to supply the purge gas from the upstream side to the downstream side of the supply path when it is in the cleaning state.

18. The liquid treatment apparatus according to claim 13, characterized in that, The control unit outputs a control signal to perform the following steps as part of an abnormality elimination process performed before the processing step: this step is performed after the processing liquid purging step, causing the pump to operate at a spray pressure greater than the spray pressure in the processing step, so that the processing liquid flows from the upstream side to the downstream side of the supply path and is discharged from the supply unit.

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