Substrate processing apparatus

Abstract

A substrate processing apparatus is provided. The substrate processing apparatus suppresses variation in contact pressure between a top member and an upper member. The upper member is disposed at an upper portion in a processing chamber in which a substrate is subjected to substrate processing. The top member constitutes a top portion of the processing chamber, and a through-hole is formed in an opposing surface of the top member opposite the upper member. A support member penetrates the through-hole and is configured to be able to slide and move within the through-hole, and supports the upper member at one end located in the processing chamber. A housing portion houses the other end of the support member located outside the processing chamber, and is divided into a first space on a side of the other end of the support member with respect to the other end in a moving direction of the support member, and a second space on a side of one end of the support member with respect to the other end in the moving direction. A pressure control portion causes a pressure difference that moves the support member to be generated between the first space and the second space.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus. Background Technology

[0002] Patent document 1 discloses a structure in which a spray plate is configured to close the opening of a nozzle body having a concave opening on its lower surface and the spray plate is fastened to the nozzle body with bolts.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 11-111626 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for suppressing changes in contact pressure between a top member and an upper member.

[0008] Solution for solving the problem

[0009] A substrate processing apparatus disclosed herein includes an upper member, a top member, a support member, a housing, and a pressure control unit. The upper member is disposed in the upper part of a processing chamber where substrate processing is performed. The top member forms the top of the processing chamber and has a through hole formed on its opposing surface. The support member passes through the through hole and is configured to slide within the through hole, supporting the upper member at one end located within the processing chamber. The housing houses the other end of the support member located outside the processing chamber, and a first space is provided on the other end side relative to the other end in the movement direction of the support member, and a second space is provided on the other end side relative to the other end in the movement direction. The pressure control unit generates a pressure difference between the first space and the second space, causing the support member to move.

[0010] The effects of the invention

[0011] According to this disclosure, it is possible to suppress changes in the contact pressure between the top member and the upper member. Attached Figure Description

[0012] Figure 1 This is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus according to the embodiment.

[0013] Figure 2 This is a diagram showing an example of the configuration of the support portion involved in the embodiment.

[0014] Figure 3This is a diagram showing the structure of the support portion involved in the embodiment.

[0015] Figure 4 This is a diagram showing the movement of the support section before decompression.

[0016] Figure 5 This is a diagram showing the operation of the support after decompression.

[0017] Figure 6 This is a diagram illustrating an example of the design values ​​of the substrate processing apparatus involved in the embodiment.

[0018] Figure 7 This diagram illustrates an example of a structure in the substrate processing apparatus according to the embodiment that is capable of applying voltage to the upper top plate. Detailed Implementation

[0019] Hereinafter, embodiments of the substrate processing apparatus disclosed in this application will be described in detail with reference to the accompanying drawings. However, the disclosed substrate processing apparatus is not limited to these embodiments.

[0020] Furthermore, in substrate processing apparatuses that perform plasma processing, process gas is supplied from a nozzle positioned at the top of the processing chamber while high-frequency electricity is applied to generate plasma within the processing chamber. The nozzle absorbs heat from the plasma. Therefore, for example, using Patent Document 1, in a configuration where a top component such as the nozzle body is bolted to an upper component such as a spray plate, the contact pressure between the top component and the upper component changes due to the difference in linear expansion of the bolts caused by the absorption of heat from the plasma. For example, if sufficient contact pressure cannot be obtained due to bolt linear expansion, heat transfer decreases and the temperature of the upper component rises, causing deformation and warping in the upper component, potentially leading to cracking of the upper component due to stress concentration. Therefore, a technique to suppress changes in the contact pressure between the top component and the upper component is desired.

[0021] [Structure of the substrate processing device]

[0022] Next, the substrate processing apparatus according to the embodiment will be described. Hereinafter, an example will be given in which the substrate processing apparatus according to the embodiment is configured as a plasma apparatus and an etching process using plasma is performed as substrate processing. Figure 1 This is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus 10 according to the embodiment. The substrate processing apparatus 10 according to the embodiment performs plasma etching processing on substrates such as semiconductor wafers.

[0023] The substrate processing apparatus 10 has a hermetically sealed chamber 1. The chamber 1 is formed into a generally cylindrical shape, for example, using aluminum or the like with an anodized coating on its surface. The chamber 1 is grounded. The substrate is processed inside the chamber 1. The chamber 1 functions as a processing chamber for performing substrate processing.

[0024] A substrate 2a, made of a conductive metal such as aluminum, is provided inside the chamber 1. The substrate 2a functions as a lower electrode. The substrate 2a is supported by a support platform 4, which serves as a conductor, provided on an insulating plate 3. In addition, an edge ring 5, made of a single crystal silicon or similar material, is provided on the outer periphery above the substrate 2a. The edge ring 5 is sometimes referred to as a focusing ring. A cylindrical inner wall member 3a, made of a material such as quartz, is provided around the substrate 2a and the support platform 4 in a manner that surrounds the substrate 2a and the support platform 4.

[0025] Above the substrate 2a, a nozzle 16 is provided in a manner substantially parallel to the substrate 2a, or in other words, opposite to the substrate W disposed on the substrate 2a, and functions as an upper electrode. The nozzle 16 and the substrate 2a function as a pair of electrodes (upper electrode and lower electrode). A high-frequency power supply 12a is connected to the substrate 2a via a matching connector 11a. Additionally, a high-frequency power supply 12b is connected to the substrate 2a via a matching connector 11b.

[0026] High-frequency power supply 12a supplies high-frequency power at a predetermined frequency (e.g., 100 MHz) to substrate 2a for plasma generation. Additionally, high-frequency power supply 12b supplies high-frequency power at a predetermined frequency (e.g., 13 MHz) to substrate 2a for ion introduction (bias), and this frequency is lower than that of high-frequency power supply 12a.

[0027] An electrostatic chuck 6 is provided on the upper surface of the substrate 2a. This electrostatic chuck 6 is used to hold and heat the substrate W. The electrostatic chuck 6 has an insulator 6b and electrodes 6a and a heater 6c disposed between the insulators 6b. Electrodes 6a are connected to a DC power supply 13. The heater 6c is connected to a heater power supply 14. The electrostatic chuck 6 utilizes the DC voltage applied from the DC power supply 13 to generate a Coulomb force on its surface. Under the action of the Coulomb force, the substrate W is held and held on the upper surface of the electrostatic chuck 6. The DC power supply 13 is switched on and off using a control unit 90 described later.

[0028] Furthermore, the electrostatic chuck 6 heats the substrate W using a heater 6c heated by electricity supplied from the self-heating power supply 14. Additionally, multiple protrusions are formed on the upper surface of the electrostatic chuck 6, and the substrate W is supported by these protrusions. A heat transfer gas, described later, is supplied between these protrusions.

[0029] A flow path 2b for the flow of a heating medium is formed inside the substrate 2a. A cooling unit 33 for controlling the temperature of the heating medium is connected to the flow path 2b via pipes 2c and 2d. The heating medium supplied by the cooling unit 33 circulates within the flow path 2b, thereby controlling the temperature of the substrate 2a by utilizing heat exchange with the heating medium.

[0030] Additionally, a pipe 32 is provided on the substrate 2a through the substrate 2a for supplying a heat transfer gas (back side gas) such as helium between the electrostatic chuck 6 and the substrate W. The pipe 32 is connected to the heat transfer gas supply unit 31. The heat transfer gas supply unit 31 supplies heat transfer gas between the electrostatic chuck 6 and the substrate W through the pipe 32.

[0031] By controlling the temperature of the heat medium flowing in the flow path 2b, the power supplied to each heater 6c in the electrostatic chuck 6, and the pressure of the heat transfer gas supplied between the electrostatic chuck 6 and the substrate W, the temperature of the substrate W on the electrostatic chuck 6 is controlled to a predetermined range.

[0032] A nozzle 16 is disposed in the upper part of the chamber 1. The nozzle 16 includes a main body 16a and an upper top plate 16b. The main body 16a forms the top of the chamber 1. The main body 16a is supported in the upper part of the chamber 1 by means of an insulating member 45. The main body 16a is formed, for example, from aluminum with an anodized surface. The upper top plate 16b is formed, for example, from a silicon-containing material such as quartz. The upper top plate 16b is disposed in the upper part of the chamber 1. The main body 16a is provided with a support portion 100 for supporting the upper top plate 16b. The support portion 100 is provided on the upper surface of the main body 16a at positions corresponding to the center and periphery of the upper top plate 16b, and the support portion 100 passes through the main body 16a and supports the upper top plate 16b.

[0033] Figure 2 This is a diagram showing an example of the configuration of the support portion 100 according to the embodiment. Figure 2 This diagram shows the nozzle 16 from above, illustrating the arrangement of the support portion 100. The upper top plate 16b is disc-shaped. A support portion 100 is positioned corresponding to the center of the upper top plate 16b. Furthermore, eight support portions 100 are evenly spaced along the inner edge of the upper top plate 16b. Figure 2 The arrangement of the support portion 100 shown is an example and is not limited thereto. For example, the support portion 100 may not be located at the center of the upper top plate 16b, but may be provided only along the edge of the upper top plate 16b. In addition, it is acceptable to provide three or more support portions 100 at equal intervals along the edge, and it is preferable to provide six to eight.

[0034] return Figure 1A functional film 16h is provided between the main body 16a and the upper top plate 16b. The functional film 16h is formed to be the same size as or slightly smaller than the upper top plate 16b. The functional film 16h is configured for the transfer of electricity (conductivity / insulation) and heat (heat transfer / insulation) between the main body 16a and the upper top plate 16b. For example, the functional film 16h has heat transfer and electrical conductivity to maintain heat transfer and electrical conductivity between the main body 16a and the upper top plate 16b. In addition, the functional film 16h functions as a buffer member between the main body 16a and the upper top plate 16b.

[0035] A diffusion chamber 16c is formed inside the main body 16a. Multiple gas outlets 16e are formed at the bottom of the main body 16a, located below the diffusion chamber 16c. Multiple gas nozzles 16f are provided on the upper top plate 16b, extending through the upper top plate 16b in the thickness direction, and each gas nozzle 16f communicates with the aforementioned gas outlets 16e. With this structure, the processing gas supplied to the diffusion chamber 16c diffuses within the diffusion chamber 16c and is supplied to the chamber 1 in a spray-like manner via the respective gas outlets 16e and gas nozzles 16f. Furthermore, a heater (not shown) and a piping (not shown) for circulating the heat medium are provided in the main body 16a, etc., to control the temperature of the nozzle 16 within a desired range during the processing of the substrate W.

[0036] A gas inlet 16g is formed in the main body 16a for introducing processing gas into the diffusion chamber 16c. A processing gas supply source 15 for supplying processing gas used in the processing of the substrate W is connected to the gas inlet 16g via a pipe 15b. A valve V and a mass flow controller (MFC) 15a are provided in the pipe 15b. The processing gas supplied from the processing gas supply source 15 is supplied to the diffusion chamber 16c of the nozzle 16 via the pipe 15b, and is supplied to the chamber 1 via the gas outlets 16e and gas nozzles 16f.

[0037] The nozzle 16 is electrically connected to a variable DC power supply 42 via a low-pass filter (LPF) 40 and a switch 41. The switch 41 controls the supply and disconnection of the DC voltage from the variable DC power supply 42 to the nozzle 16. For example, when high-frequency power is supplied from high-frequency power supplies 12a and 12b to the substrate 2a to generate plasma in the chamber 1, the switch 41 is turned on as needed to apply a predetermined DC voltage to the nozzle 16.

[0038] An exhaust port 71 is formed at the bottom of chamber 1. An exhaust device 73 is connected to the exhaust port 71 via an exhaust pipe 72. The exhaust device 73 has a vacuum pump, which can reduce the pressure inside chamber 1 to a predetermined vacuum level by operating the vacuum pump. In addition, an opening 74 for feeding and feeding the substrate W is formed on the side wall of chamber 1, and a gate valve G for opening and closing the opening 74 is provided.

[0039] A deposit shield 76 is detachably provided along the inner wall surface of the chamber 1. Additionally, a deposit shield 77 is disposed on the outer peripheral surface of the inner wall member 3a to cover it. The deposit shields 76 and 77 prevent etching byproducts (deposits) from adhering to the inner wall of the chamber 1. Furthermore, a conductive member (GND assembly) 79, DC grounded, is provided at approximately the same height as the substrate W held on the electrostatic chuck 6 by the deposit shield 76. The conductive member 79 suppresses abnormal discharges within the chamber 1.

[0040] Additionally, annular magnets 9 are arranged concentrically around chamber 1. The annular magnets 9 create a magnetic field in the space between the nozzle 16 and the substrate 2a. The annular magnets 9 are kept rotatable by a rotating mechanism (not shown).

[0041] The substrate processing apparatus 10 includes a control unit 90. The control unit 90 is, for example, a computer equipped with a processor, storage unit, input device, and display device. The control unit 90 controls each part of the substrate processing apparatus 10. In the control unit 90, an operator can use the input device to perform command input operations to manage the substrate processing apparatus 10. Furthermore, the control unit 90 can visually display the operating status of the substrate processing apparatus 10 using the display device. Moreover, the storage unit of the control unit 90 stores control programs and process data for controlling various processes performed by the substrate processing apparatus 10 using the processor. By executing the control programs through the processor of the control unit 90 and controlling each part of the substrate processing apparatus 10 according to the process data, the substrate processing apparatus 10 performs the desired processing. For example, the control unit 90 controls each part of the substrate processing apparatus 10 to perform etching processing on the substrate fed into the substrate processing apparatus 10.

[0042] [Structure of the support section]

[0043] Figure 3 This is a diagram showing the structure of the support portion 100 according to the embodiment. Figure 3 The diagram shows a cross-sectional view illustrating the internal structure of a support portion 100. A through hole 16i is formed in the main body portion 16a, corresponding to the position of the upper support plate 16b. The support portion 100 is provided on the upper surface of the main body portion 16a, corresponding to the position of the through hole 16i.

[0044] The support portion 100 has a support member 101 and a receiving portion 102.

[0045] The support member 101 is cylindrical and inserted into the through hole 16i. The support member 101 extends through the through hole 16i and is designed to slide within it. The support member 101 supports the upper top plate 16b via an end portion 101a located within the chamber 1. For example, a hole 16j is formed in the upper top plate 16b and the functional film 16h at the location of the support member 101. The diameter of the lower portion of the upper top plate 16b of the hole 16j is larger than the diameter of the upper portion of the upper top plate 16b of the hole 16j. The end portion 101a of the support member 101 passes through the hole 16j in the upper top plate 16b, and its diameter is larger than the diameter of the upper portion of the upper top plate 16b of the hole 16j, forming a disc shape. The support member 101 supports the upper top plate 16b by hooking the end portion 101a onto it. At the location where the lower surface of the upper top plate 16b exposed to plasma has a hole 16j, a covering member 16k of the same material as the upper top plate 16b is used for covering. The covering member 16k has a small hole 16l.

[0046] An insulating member 16m, made of insulating material, is provided along the circumferential surface between the through hole 16i and the support member 101. The insulating member 16m is cylindrical with a hole formed along its central axis, through which the support member 101 passes. The outer diameters of the upper and lower ends of the insulating member 16m are larger than the diameter of the through hole 16i.

[0047] The support member 101 is made of a conductive material. The support member 101 is insulated from the main body 16a by an insulating member 16m.

[0048] The insulating member 16m is fixed to the main body 16a by fixing members 111 such as bolts. In addition, a sealing member 112 such as a sealing member is provided at the contact surface between the insulating member 16m and the upper top plate 16b in such a way as to surround the support member 101, so as to airtightly seal the support member 101.

[0049] The housing 102 has a shell portion 103 and a cover portion 104.

[0050] The housing portion 103 is formed as a cylinder with one end face closed on the upper side, and the other end face on the lower side is closed by the cover portion 104.

[0051] The cover 104 is fixed to the insulating member 16m by fastening members 113 such as bolts. In addition, a sealing member 114 such as a sealing member is provided on the contact surface between the cover 104 and the insulating member 16m in such a way as to surround the support member 101, so as to airtightly seal the support member 101.

[0052] The receiving portion 102 receives the other end 101b of the support member 101 located outside the chamber 1. For example, the receiving portion 102 has a hole 104a in the cover portion 104 that is slightly larger than the support member 101. The support member 101 passes through the hole 104a, and the end 101b is located inside the receiving portion 102.

[0053] In the receiving portion 102, a first space 105 is provided on the upper side of the support member 101 relative to the end portion 101b in the direction of movement of the support member 101, and a second space 106 is provided on the lower side of the support member 101 relative to the end portion 101b in the direction of movement of the support member 101. For example, the end portion 101b of the support member 101 is formed in a disc shape such that its diameter is larger than the diameter of the hole 104a and is the same as the inner diameter of the receiving portion 102. A bellows 107a is provided along the edge of the upper surface 101c of the end portion 101b. The bellows 107a is connected to the upper surface 101c of the end portion 101b and the upper surface 103a of the interior of the housing portion 103. The interior of the receiving portion 102 is divided into the first space 105 and the second space 106 by the bellows 107a. The bellows 107a is designed to be able to extend and retract along the direction of movement of the support member 101, and the first space 105 and the second space 106 enclosed by the bellows 107a are separated and sealed airtightly.

[0054] Furthermore, the receiving portion 102 divides and provides a second space 106 and a third space 108 around the support member 101. A bellows 107b is provided around the support member 101 in the receiving portion 102. The bellows 107b is connected to the lower surface 101d of the end portion 101b and the upper surface 104b of the cover portion 104. The bellows 107b is designed to be expandable and contractible along the direction of movement of the support member 101, separating and airtightly sealing the third space 108 and the second space 106 surrounding the support member 101.

[0055] A hole 101e is formed at the end 101b to connect the first space 105 and the third space 108. A through hole 16i is formed between the insulating member 16m and the supporting member 101 to allow the supporting member 101 to slide smoothly.

[0056] Thus, the first space 105 is connected to the interior of chamber 1 via the hole 101e, the third space 108, and the gaps 16n, 16j, and 16l. The second space 106 is configured as an atmospheric pressure space. Because the first space 105 and the third space 108 are connected to the interior of chamber 1, they have the same pressure as the interior of chamber 1.

[0057] Next, the operation of the substrate processing apparatus 10 according to the embodiment when performing plasma etching process will be described.

[0058] When the chamber 1 is in an atmospheric state, the first space 105, the second space 106, and the third space 108 of the support 100 are at atmospheric pressure. Figure 4 This diagram illustrates the operation of the support portion 100 before decompression. The second space 106 of the support portion 100 is set to atmospheric pressure. Furthermore, in the support portion 100, when the chamber 1 is at atmospheric pressure, air flows in from the chamber 1, thereby making the first space 105 and the third space 108 at atmospheric pressure. When the first space 105 and the second space 106 are at atmospheric pressure, the support member 101 descends, and the upper top plate 16b and the main body 16a separate.

[0059] During etching, the substrate processing apparatus 10 uses the exhaust device 73 to reduce the pressure inside the chamber 1 to a predetermined vacuum level. When the exhaust device 73 reduces the pressure inside the chamber 1, the first space 105 and the third space 108 are depressurized.

[0060] Figure 5 This diagram illustrates the operation of the support portion 100 after decompression. When the first space 105 is decompressed, a pressure difference is generated between the first space 105 and the second space 106. Under the action of this pressure difference, an upward force is generated on the support member 101, causing the support member 101 to rise. For example, before decompression is performed in the chamber 1, an upward force generated by the atmosphere in the second space 106 and a downward force generated by the atmosphere in the first space 105 are applied to the end 101b of the support member 101. When the chamber 1 is decompressed and the first space 105 is decompressed, the downward force generated by the atmosphere in the first space 105 decreases, and under the action of the upward force generated by the atmosphere in the second space 106, the support member 101 rises. As a result, the upper top plate 16b rises along with the support member 101 and closes with the main body 16a.

[0061] like Figure 2 As shown, the substrate processing apparatus 10 of the embodiment has eight support portions 100 corresponding to the periphery of the upper top plate 16b. This allows the periphery of the upper top plate 16b to be uniformly and tightly fitted with the main body 16a. Furthermore, the substrate processing apparatus 10 of the embodiment has support portions 100 corresponding to the center of the upper top plate 16b. This allows the central area of ​​the upper top plate 16b to be tightly fitted with the main body 16a.

[0062] Furthermore, in the substrate processing apparatus 10 of the embodiment, the upper top plate 16b is not fixed to the main body 16a. Instead, the upper top plate 16b is supported by the support portion 100 using the force generated by the pressure difference between the first space 105 and the second space 106. Therefore, even if the support member 101 expands linearly due to absorbing heat from the plasma, the force supporting the upper top plate 16b remains almost unchanged because the support member 101 can slide according to the linear expansion. Therefore, by using the support portion 100 to support the upper top plate 16b, the substrate processing apparatus 100 of the embodiment can suppress changes in the contact pressure between the upper top plate 16b and the main body 16a even when the temperature of the support portion 100 changes.

[0063] Here, for example, in the case where the upper top plate 16b and the main body 16a are fastened together using bolts or other threaded parts instead of the support part 100, the upper top plate 16b may sometimes crack due to excessive torque applied when using the threaded parts to fix it. Furthermore, since torque deviations of the individual threaded parts are easily generated, torque management of the threaded parts is necessary. Additionally, in the case of a structure using bolts for fastening, the linear expansion difference of the bolts due to absorbing heat from the plasma can easily cause time-varying changes in the contact pressure between the upper top plate 16b and the main body 16a.

[0064] Furthermore, the support portion 100 described in this embodiment is designed to fasten the upper top plate 16b and the main body 16a without using bolts or other threaded fasteners. Therefore, when the upper top plate 16b is installed on the main body 16a, torque management of the threaded fasteners is unnecessary, preventing installation defects caused by loosening of the threaded fasteners. Additionally, it prevents cracks in the upper top plate 16b caused by using excessive torque to fix the upper top plate 16b to the main body 16a. Moreover, the support portion 100 supports the upper top plate 16b using the force generated by the pressure difference between the first space 105 and the second space 106, thereby suppressing time-varying changes in the contact pressure between the upper top plate 16b and the main body 16a.

[0065] Furthermore, the first space 105 of the support portion 100 communicates with the interior of the chamber 1. Thus, for the substrate processing apparatus 10, by depressurizing the interior of the chamber 1, the upper top plate 16b rises and seals with the main body portion 16a, without the need for a separate depressurization mechanism to depressurize the first space 105.

[0066] The support portion 100 is designed such that when the pressure inside the chamber 1 is reduced to the vacuum level used for substrate processing, the contact pressure between the upper top plate 16b and the main body portion 16a becomes a predetermined pressure.

[0067] Figure 6 This diagram illustrates an example of the design values ​​for the substrate processing apparatus 10 according to the embodiment. For example, the upper top plate 16b has a diameter of 418 mm and a weight of 4.2 kg. Additionally, eight support portions 100, corresponding to the periphery of the upper top plate 16b, are arranged in a circle with a diameter of 386 mm. Each support portion 100 has a circular area with a diameter of 18 mm on the upper surface of its end 101b, enclosed by a bellows 107a. The area of ​​the circular area enclosed by the bellows 107a is 0.000254 m². 2 (=(0.009) 2 ×3.14). Since there are 9 support sections 100, the area that generates the pressure difference is 0.00229m². 2 (=0.000254×9). Atmospheric pressure is set to 101325 Pa (N / m). 2 In this case, the force exerted by the nine support sections 100 pulling the upper top plate 16b upwards becomes 232 N (=0.00229×101325).

[0068] In addition, the weight of the upper top plate 16b is 4.2 kg. Therefore, the downward force generated by the weight of the upper top plate 16b is 41 N (=4.2×9.8).

[0069] Therefore, the contact pressure between the upper top plate 16b and the main body 16a becomes 191N (=232N-41N). The substrate processing apparatus 10 according to the embodiment can change the contact pressure between the upper top plate 16b and the main body 16a by changing the number of support portions 100 and the area of ​​the region surrounded by the bellows 107a.

[0070] As described above, the substrate processing apparatus 10 according to the embodiment includes an upper top plate 16b (upper member), a main body 16a (top member), a support member 101, a receiving portion 102, and an exhaust device 73 (pressure control unit). The upper top plate 16b is disposed in the upper part of a chamber 1 (processing chamber) for processing the substrate W. The main body 16a forms the top of the chamber 1, and a through hole 16i is formed on the opposing surface of the main body 16a opposite to the upper top plate 16b. The support member 101 passes through the through hole 16i and is configured to slide within the through hole 16i. The support member 101 supports the upper top plate 16b by one end located inside the chamber 1. The receiving portion 102 receives the other end of the support member 101 located outside the chamber 1, and provides a first space 105 on the other end side in the moving direction of the support member 101 relative to the other end, and provides a second space 106 on the one end side in the moving direction relative to the other end. The exhaust device 73 creates a pressure difference between the first space 105 and the second space 106, causing the support member 101 to move. As a result, the substrate processing apparatus 10 can suppress changes in the contact pressure between the main body 16a and the upper top plate 16b.

[0071] Furthermore, in the housing 102, the second space 106 is designed to be at atmospheric pressure. It is divided into the second space 106 and the third space 108, which is surrounded by the bellows 107b around the support member 101, by a bellows 107b provided around the support member 101. The other end of the support member 101 has a hole 101e that connects the first space 105 and the third space 108. The first space 105 and the chamber 1 are connected via the hole 101e, the third space 108, and the through hole 16i. The exhaust device 73 reduces the pressure in the chamber 1, thereby creating a pressure difference between the first space 105 and the second space 106 that causes the support member 101 to move. As a result, the substrate processing apparatus 10 does not need to provide an additional exhaust device to create a pressure difference between the first space 105 and the second space 106, but can reduce the pressure in the chamber 1 by using the exhaust device 73, thereby sealing the upper top plate 16b with the main body 16a.

[0072] The above describes the implementation methods, but it should be considered that the disclosed implementation methods are illustrative in all respects and are not restrictive. In fact, the above implementation methods can be specifically implemented in various forms. In addition, the above implementation methods can be omitted, substituted, or modified in various forms without departing from the scope of the claims and their spirit.

[0073] For example, in the above-described embodiments, the main body 16a may be equipped with a temperature control mechanism such as a heater and a flow path for supplying temperature-regulating fluids such as refrigerant, thereby enabling the adjustment of the temperature of the main body 16a. Furthermore, the temperature of the upper top plate 16b can be adjusted by utilizing a functional thin film 16h with heat transfer properties to exchange heat between the upper top plate 16b and the main body 16a.

[0074] In addition, the substrate processing apparatus 10 described in the above embodiments may also be configured to apply voltage to the upper top plate 16b via the support portion 100. Figure 7 This diagram illustrates an example of a structure in the substrate processing apparatus 10 according to the embodiment that allows voltage to be applied to the upper top plate 16b. The main body 16a is made of a conductive material, and an insulating member 16m is provided on the opposite surface between the through hole 16i and the support member 101. A power supply 130 for applying DC voltage is provided at the upper part of the chamber 1. This power supply 130 is connected to the support member 101 via conductive conductive parts 131 and 132 and conductive wiring 133 provided on the end face of the housing 103. The support member 101 is made of a conductive material and is subjected to DC voltage. The upper top plate 16b is made of a conductive material and is subjected to DC voltage via the support member 101. Thus, the substrate processing apparatus 10 can apply DC voltage to the upper top plate 16b via the support part 100.

[0075] Furthermore, in the above embodiment, the first space 105 was depressurized by communicating with the interior of the chamber 1 and depressurizing the chamber 1 using the exhaust device 73. However, the disclosed technology is not limited to this. For example, an exhaust device that communicates with the first space 105 of the receiving portion 102 and vents the first space 105 may be provided separately. In this case, the hole 101e may not be formed at the end 101b of the support member 101.

[0076] Furthermore, the substrate processing apparatus 10 described in the above embodiment may also include a detection unit to confirm whether the support portion 100 can properly support the upper top plate 16b. A detection unit is provided to detect the pressure and capacity of the first space 105 of the receiving portion 102, and the movement of the support member 101 is detected based on the detected pressure and capacity of the first space 105. The control unit 90 may also monitor the warping of the upper top plate 16b, perform operation monitoring, and monitor the safety rate of the stroke length of the support member 101 caused by linear expansion differences, etc., based on the detection results.

[0077] Furthermore, the substrate processing apparatus 10 described in the above embodiment is illustrated by the case where the interior of the receiving portion 102 is divided into a first space 105 and a second space 106 using a bellows 107a. However, the disclosed technology is not limited to this. For example, an O-ring, a sealing member, or the like, which can maintain airtightness even if the end 101b slides, may be provided between the peripheral surface of the end 101b (which becomes a side surface) and the inner side surface of the receiving portion 102, thereby dividing the interior of the receiving portion 102 into a first space 105 and a second space 106.

[0078] Furthermore, in the above embodiments, the example described is based on the case where the substrate is a semiconductor wafer. However, the disclosed technology is not limited to this. For example, the substrate may also be other substrates such as a glass substrate.

[0079] Furthermore, in the above embodiment, a plasma etching apparatus was described as an example of the substrate processing apparatus 10. However, the disclosed technology is not limited to this. Substrate processing can also be film formation processing, modification processing, or other substrate processing. The substrate processing apparatus can be any apparatus, as long as it has a structure that allows the top member to contact the upper member. For example, the disclosed technology can also be applied to film formation apparatuses and modification apparatuses that use plasma.

[0080] Furthermore, in the embodiments described above, capacitively coupled plasma (CCP) was used as an example of a plasma source, but the disclosed technology is not limited to this. For example, inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), or helical wave-excited plasma (HWP) can also be used as plasma sources.

[0081] Furthermore, it should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. In fact, the above-described embodiments can be implemented in various forms. In addition, the above-described embodiments can be omitted, substituted, or modified in various forms without departing from the scope of the appended claims and their spirit.

Claims

1. A substrate processing apparatus, wherein, The substrate processing apparatus has: The upper component is disposed in the upper part of the processing chamber where substrate processing is performed on the substrate; The top member, which forms the top of the processing chamber, has a first through hole formed on the opposite side of the upper member; A support member, which passes through the first through hole and is configured to slide within the first through hole, supports the upper member by means of a first end located in the processing chamber; A receiving section that houses the second end of the supporting member located outside the processing chamber; The first telescopic member is located on the upper side of the second end of the support member, and is configured to divide the first space and the second space, wherein the first space is the internal space enclosed by the first telescopic member, and the second space is the external space of the first telescopic member; A second telescopic member, located on the lower side of the second end of the support member, is configured to divide the second space and a third space, wherein the third space is located around the support member and enclosed by the second telescopic member; and The pressure control unit creates a pressure difference between the first space and the second space, causing the support member to move. Within the containment section, the second space is composed of space at atmospheric pressure. A first hole connecting the first space and the third space is formed at the second end of the support member. The first space and the processing chamber are connected via the first hole, the third space, and the first through hole. The pressure control unit reduces the pressure in the processing chamber, thereby creating a pressure difference between the first space and the second space that causes the support member to move.

2. The substrate processing apparatus according to claim 1, wherein, The top component is equipped with a temperature control mechanism for adjusting the temperature. One or both of the top member and the upper member are provided with heat-conducting sheets on their opposite faces.

3. The substrate processing apparatus according to claim 1 or 2, wherein, The top member is made of a conductive material, and an insulating member is provided on the opposite surface between the first through hole and the supporting member. The support member is made of a conductive material and is subjected to a DC voltage. The upper component is made of a conductive material and is subjected to a DC voltage via the support component.

4. The substrate processing apparatus according to claim 2, wherein, The sheet is conductive.

5. The substrate processing apparatus according to claim 1, wherein, The top component is provided with a plurality of first through holes, and a plurality of support components and a receiving portion are provided corresponding to the plurality of first through holes.

6. The substrate processing apparatus according to claim 1, wherein, The upper component is formed of a silicon-containing material.

7. The substrate processing apparatus according to claim 6, wherein, The top component is made of aluminum.

8. The substrate processing apparatus according to claim 1, wherein, The support member is formed of a conductive material. An insulating member is provided between the circumferential surface of the first through hole and the supporting member.

9. The substrate processing apparatus according to claim 8, wherein, The insulating component is fixed to the top component by a fixing component.

10. The substrate processing apparatus according to claim 1, wherein, The upper component is provided with a second through hole. The lower surface of the upper component corresponding to the second through hole is covered by a covering component. A second hole is formed in the covering member.

11. The substrate processing apparatus according to claim 1, wherein, The support member includes a shaft portion and a flange portion. The flange portion is provided with the first hole.

12. The substrate processing apparatus according to claim 11, wherein, The first telescopic member is disposed on the upper surface of the flange portion, and the second telescopic member is disposed on the lower surface of the flange portion.

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