A brightness detection method and device

Abstract

The present invention discloses a brightness detection method and device, wherein the method comprises: obtaining detection parameters of a TFT light sensor under a current brightness environment; determining, according to the detection parameters, whether the target detection mode of the TFT light sensor is off detection or on detection; when the detection parameters correspond to a dark environment, the target detection mode is off detection; when the detection parameters correspond to a bright environment, the target detection mode is on detection; and using the target detection mode to perform brightness detection on the current brightness environment. The method of the present invention determines the target detection mode by using the detection parameters, adopts different detection modes in different brightness environments, realizes brightness segmentation detection, can well suppress current drift in both dark and bright environments, and ensures that the detection result is more accurate and stable.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic technology, and in particular to a brightness detection method and device. Background Art

[0002] Currently, mobile phones have been developing towards full screens, but devices such as the front camera and TFT light sensor must be placed in front of the screen, which hinders the improvement of the screen-to-body ratio. If TFT (Thin Film Transistor) devices are used as TFT light sensors, they can be integrated into the display screen. This saves the design space and cost of the top of the whole machine, and there is no change in the process technology for display screen production integration. The photoelectric characteristics of the TFT device current affected by light can integrate the ambient light detection function into the display screen without changing the process technology.

[0003] However, in actual product development, it was found that the light detection accuracy of TFT devices was not stable when powered on, and serious drift would occur. Summary of the invention

[0004] In view of the above problems, the present invention proposes a brightness detection method and device, which can effectively suppress current drift in both dark and bright environments, thereby ensuring that the detection result is more accurate and stable.

[0005] In the first aspect, the present application provides the following technical solution through an embodiment:

[0006] A brightness detection method, the method comprising:

[0007] Acquire detection parameters of the TFT light sensor under the current brightness environment; determine, based on the detection parameters, whether the target detection mode of the TFT light sensor is off detection or on detection; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; when the detection parameters correspond to a bright environment, the target detection mode is the on detection; use the target detection mode to perform brightness detection on the current brightness environment.

[0008] Optionally, the TFT light sensor includes a first sensing device and a second sensing device; and obtaining the detection parameters of the TFT light sensor under the current brightness environment includes:

[0009] Obtain a first photocurrent of the first sensing device under a current brightness environment, and obtain a second photocurrent of the second sensing device under a current brightness environment; wherein the first sensing device is in a non-light-shielding state, and the second sensing device is in a light-shielding state; obtain the detection parameter based on the first photocurrent and the second photocurrent.

[0010] Optionally, obtaining the detection parameter according to the first photocurrent and the second photocurrent includes:

[0011] The first photocurrent and the second photocurrent are compensated to obtain a first compensation current and a second compensation current; and the detection parameter is obtained according to the first compensation current and the second compensation current.

[0012] Optionally, obtaining the detection parameter according to the first photocurrent and the second photocurrent includes:

[0013] The difference between the first photocurrent and the second photocurrent is determined as the detection parameter.

[0014] Optionally, the adopting the target detection method to perform brightness detection on the current brightness environment includes:

[0015] A third photocurrent is obtained when the first sensing device is in the target detection mode; and a brightness detection result of the current brightness environment is obtained according to the third photocurrent.

[0016] Optionally, determining, according to the detection parameter, that the target detection mode of the TFT light sensor is off detection or on detection includes:

[0017] Determine whether the detection parameter is less than a preset first threshold or greater than a preset second threshold; the detection parameter is used to characterize the ambient brightness; if the detection parameter is less than the first threshold, determine that the target detection mode of the TFT light sensor is off detection; if the detection parameter is greater than the second threshold, determine that the target detection mode of the TFT light sensor is on detection.

[0018] Optionally, the value range of the first threshold and the second threshold is a parameter range corresponding to an illumination range of 40 lux to 100 lux.

[0019] In the second aspect, based on the same inventive concept, the present application provides the following technical solution through an embodiment:

[0020] A brightness detection device, comprising:

[0021] An acquisition module is used to acquire detection parameters of the TFT light sensor under the current brightness environment; a determination module is used to determine, based on the detection parameters, whether the target detection mode of the TFT light sensor is off detection or on detection; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; when the detection parameters correspond to a bright environment, the target detection mode is the on detection; a detection module is used to perform brightness detection on the current brightness environment using the target detection mode.

[0022] In the third aspect, based on the same inventive concept, the present application provides the following technical solution through an embodiment:

[0023] A brightness detection system includes: a driving chip, a detection circuit, and a TFT light sensor;

[0024] The detection circuit is connected to the TFT light sensor and is used to detect the detection parameters generated by the TFT light sensor under the current brightness environment; the driving chip is respectively connected to the detection circuit and the TFT light sensor, and is used to determine, according to the detection parameters, whether the target detection mode of the TFT light sensor is off detection or on detection; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; when the detection parameters correspond to a bright environment, the target detection mode is the on detection; the target detection mode is used to perform brightness detection on the current brightness environment.

[0025] Optionally, the detection circuit includes: a first detection circuit and a second detection circuit; the TFT light sensor includes: a first sensing device and a second sensing device; the first sensing device is in a non-light-shielding state, and the second sensing device is in a light-shielding state;

[0026] The first detection circuit is connected to the first sensing device and is used to detect a first photocurrent generated by the first sensing device; the second detection circuit is connected to the second sensing device and is used to detect a second photocurrent generated by the second sensing device; the driving chip is respectively connected to the first detection circuit, the second detection circuit, the first sensing device and the second sensing device, and is used to obtain the detection parameters according to the first photocurrent and the second photocurrent.

[0027] In the fourth aspect, based on the same inventive concept, the present application provides the following technical solution through an embodiment:

[0028] An electronic device comprises a processor and a memory, wherein the memory is coupled to the processor and stores instructions, and when the instructions are executed by the processor, the electronic device executes the steps of any one of the methods described in the first aspect.

[0029] In the fifth aspect, based on the same inventive concept, the present application provides the following technical solution through an embodiment:

[0030] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of any one of the methods described in the first aspect above.

[0031] The embodiment of the present invention provides a brightness detection method and device, which obtains the detection parameters of the TFT light sensor under the current brightness environment; then, according to the detection parameters, determines whether the target detection mode of the TFT light sensor is off detection or on detection; then, when the detection parameters correspond to a dark environment, the target detection mode is off detection; when the detection parameters correspond to a bright environment, the target detection mode is on detection; finally, the target detection mode is used to perform brightness detection on the current brightness environment. In the embodiment of the present invention, the target detection mode is determined by the detection parameters, and different detection modes are used in different brightness environments to realize brightness segmented detection. In both dark and bright environments, current drift can be well suppressed to ensure that the detection results are more accurate and stable.

[0032] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0034] Figure 1 A schematic diagram showing the drift fluctuation of the current difference between two groups of TFT devices in the present invention under different ambient brightness conditions in the on-state detection state;

[0035] Figure 2 A schematic diagram showing the drift fluctuation of the current difference between two groups of TFT devices in the present invention under different ambient brightness conditions in the off detection state;

[0036] Figure 3 A schematic diagram of a process of a brightness detection method in an embodiment of the present invention is shown;

[0037] Figure 4 A schematic diagram of a detection circuit for photocurrent detection in an embodiment of the present invention is shown;

[0038] Figure 5 A schematic diagram of another detection circuit for photocurrent detection in an embodiment of the present invention is shown;

[0039] Figure 6 A schematic diagram of a driving voltage timing signal in an embodiment of the present invention is shown;

[0040] Figure 7A schematic diagram of the structure of a brightness detection system in an embodiment of the present invention is shown;

[0041] Figure 8 A schematic structural diagram showing the arrangement positions of the first induction device and the second induction device in an embodiment of the present invention is shown;

[0042] Fig. 9 Another structural schematic diagram of a brightness detection system according to an embodiment of the present invention is shown;

[0043] Fig.10 Another structural schematic diagram of a brightness detection system in an embodiment of the present invention is shown;

[0044] Fig.11 A schematic structural diagram of a brightness detection device provided in an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0045] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0046] At present, in actual product development, it is found that the light detection accuracy of TFT devices is not stable when they are powered on, and there will be serious drift. After analysis by R&D personnel, the characteristics of TFT devices will change when they are powered on, and current drift will occur in different brightness environments, and the drift amplitude is different under the conditions of light or no light. Among them, the drift is large in dark environments and small in bright environments. Affected by this, the detection accuracy in low-light environments will deteriorate, but when designing and manufacturing products, more attention is often paid to the accuracy in the dark state.

[0047] Furthermore, it was found that the on-current (Ion) and off-current (Ioff) of the TFT device also have large differences in characteristic drift under different lighting conditions. In the present invention, two groups of TFT devices with and without blocking ambient light are designed and set, and the current difference between the two groups of TFT devices is detected (△I

[10] represents the current difference in the on state,

[10] represents the 10v voltage is applied to turn on the TFT device, and △I[0] represents the current difference in the off state) to judge the ambient brightness. The TFT device with blocked ambient light can exclude environmental factors other than light. Among them, the on-current drift fluctuation is small under lighting, and the drift fluctuation is large when there is no lighting, such as Figure 1As shown in the figure, the brightness corresponding to the curves Lsamp1, Msamp1, and Dsamp1 decreases in turn, and it can be seen that the curve Dsamp1 has the largest fluctuation. The off current drifts and fluctuates greatly under light, and drifts and fluctuates less when there is no light, such as Figure 2 As shown, the brightness corresponding to the curves Lsamp2, Msamp2, and Dsamp2 decreases in turn, and it can be seen that the fluctuation of the curve Dsamp2 is the smallest. Therefore, the method in the present invention utilizes the difference in drift fluctuation sensitivity of TFT devices under different brightness environments to suppress the influence of the current drift of the TFT light sensor itself on the detection accuracy when detecting the ambient brightness. Thereby improving the overall accuracy, especially the detection accuracy in low brightness environments. The overall concept of the present invention is elaborated and illustrated in detail in the following text by way of specific embodiments.

[0048] See also Figure 3 In one embodiment of the present invention, a brightness detection method is provided. Figure 1 A flow chart of the brightness detection method is shown, and the method comprises:

[0049] Step S10: Acquire detection parameters of the TFT light sensor under the current brightness environment.

[0050] In step S10, the brightness environment can be a brighter environment or a darker environment. The TFT light sensor is used to detect the ambient brightness. In the present embodiment, the TFT light sensor may include a first sensing device and a second sensing device. The number of the first sensing device and the second sensing device is not limited. For example, the first sensing device and the second sensing device may be 10, 100, 300, etc.; the sensing device may be a TFT device. The first sensing device is in a non-shading state, so it can sense and detect the ambient light; the second sensing device is in a shading state, and the detected current data can compensate for the error of the data detected by the first sensing device. When the TFT light sensor is integrated into the screen and the first sensing device and the second sensing device are manufactured, the second sensing device can be shielded by arranging a BM (Black Matrix) layer without adding additional process flow. The detection parameters are used to characterize the ambient brightness. When the ambient brightness changes, the detection parameters also change accordingly. Specifically, one way to obtain the detection parameters can be as follows:

[0051] First, the first photocurrent generated by the first sensing device sensing the ambient light under the current brightness environment can be obtained, and the second photocurrent generated by the second sensing device sensing the ambient light under the current brightness environment can be obtained. Then, the detection parameter is obtained based on the first photocurrent and the second photocurrent. The detection parameter can be the difference between the first photocurrent and the second photocurrent, for example, ΔI=I1-I2, ΔI is the detection parameter, I1 is the first photocurrent, and I2 is the second photocurrent; it can also be the difference between the first photocurrent and the second photocurrent plus a current compensation value, which can be used to compensate for errors caused by the production process, and can also compensate for errors in specific equipment; for example, ΔI=I1-I2+I b , I b is the current compensation value.

[0052] Since the first photocurrent is affected by light and environmental factors other than light, and the second photocurrent is affected by environmental factors other than light, using a value including the difference between the first photocurrent and the second photocurrent as a detection parameter can eliminate factors of environmental influence other than light and improve detection accuracy.

[0053] In the process of obtaining the detection parameters, since the second photocurrent is the current value generated in the light-shielded state, the difference between the second photocurrent and the first photocurrent is more than 3 orders of magnitude, such as Figure 1 and Figure 2 As shown, the current corresponding to the curve Dsamp1 reaches 2000nA, and the current corresponding to Dsamp2 is about 3nA. If the second photocurrent is directly collected by an analog to digital converter (ADC), it may be impossible to identify it. Therefore, in this embodiment, the first photocurrent and the second photocurrent can be compensated, and then the first compensation current corresponding to the first photocurrent and the second compensation current corresponding to the second photocurrent can be collected by an analog to digital converter. Finally, the detection parameters are obtained according to the first compensation current and the second compensation current.

[0054] In this embodiment, the photocurrent can be obtained by voltage detection. The principle of the detection circuit is as follows: Figure 4 As shown. By connecting resistors R1 and R2 in parallel and connecting to the drain of the sensing device, the off current can be detected when resistor R1 is turned on by switch SW1, and the on current can be detected when resistor R2 is turned on by switch SW2. Then, the corresponding compensation current can be obtained by measuring the voltage of resistor R1 or R2 using an analog-to-digital converter, and the corresponding photocurrent can be obtained after conversion.

[0055] In addition, the photocurrent can be obtained by charge integration detection. The principle of the detection circuit is as follows: Figure 5As shown. After capacitors C1 and C2 are connected in parallel, they are connected in parallel to the input and output of the amplifier AMP. The input of the amplifier AMP is also connected to the drain of the sensing device. When capacitor C1 is selected by switch SW3, the corresponding off current can be detected. When capacitor C2 is selected by switch SW4, the corresponding on current can be detected. Switch SW5 is used to release the charge of capacitors C1 and C2 before or after detection. After the compensation current is detected, the corresponding photocurrent can be obtained by conversion.

[0056] Furthermore, in this embodiment, a detection frequency can be preset, that is, the frequency of executing steps S10-S30, to ensure the accuracy of the entire brightness detection process and avoid the inability to adjust the target detection method in time after the environment changes. For example, in this embodiment, the detection frequency can be determined as 5Hz, 10Hz, 20Hz, etc. Figure 6 As shown, a schematic diagram of a driving voltage timing signal with a detection frequency of 10 Hz is shown. Different detection frequencies can be set in different products or for different product requirements without limitation.

[0057] Step S20: Determine, based on the detection parameters, whether the target detection mode of the TFT light sensor is off detection or on detection; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; and when the detection parameters correspond to a bright environment, the target detection mode is the on detection.

[0058] In step S20, the magnitude of the detection parameter will be different in different brightness environments; therefore, the current environment state of the TFT light sensor can be determined by the detection parameter; the environment state can be a bright environment or a dark environment. The corresponding relationship between the detection parameter and the brightness environment can be constructed by conducting experimental calibration in brightness environments with different illuminations to form a corresponding curve or parameter table.

[0059] The target detection method used in dark environments is off detection, which means that the brightness of the environment is detected by the current of the TFT light sensor in the off state; the target detection method used in bright environments is on detection, which means that the brightness of the environment is detected by the current of the TFT light sensor in the on state. Different target detection methods are used for different brightness environments, which can effectively suppress the current drift generated by the TFT light sensor when detecting the brightness of the environment.

[0060] In this embodiment, at least the following two specific implementation processes are included to determine the target detection mode:

[0061] First, the target detection method of the TFT light sensor is determined based on different comparison benchmarks.

[0062] Determine whether the detection parameter is less than a preset first threshold or greater than a preset second threshold, and the second threshold is greater than the first threshold. If the detection parameter is less than the first threshold, determine that the target detection mode of the TFT light sensor is off detection. That is, when the detection parameter is less than the first threshold, it means that the current brightness environment is a dark environment. At this time, the use of off detection can reduce the impact of the current drift of the TFT light sensor on the detection result. If the detection parameter is greater than the second threshold, determine that the target detection mode of the TFT light sensor is on detection; that is, when the detection parameter is greater than the second threshold, it means that the current brightness environment is a bright environment. At this time, the use of on detection can reduce the impact of the current drift of the TFT light sensor on the detection result. Thereby ensuring that the current drift of the TFT light sensor when detecting the ambient brightness is smaller in both bright and dark environments, making the brightness detection result more accurate.

[0063] Specifically, the first threshold and the second threshold are different from each other, and the target detection method of the TFT light sensor is determined based on different comparison benchmarks, which can be flexibly adjusted to adapt to different application scenarios. For example, the value range of the first threshold and the second threshold can be the current range corresponding to the illumination range of 40lux to 100lux. Determining the first threshold and the second threshold within this range can ensure relatively accurate brightness detection results. At the same time, this illumination range is an illumination area with strong sensitivity to the human eye. When applied to common electronic devices such as computers and mobile phones, the first threshold can be closer to 40lux, such as 45lux, 47lux, 50lux, etc.; the second threshold can be closer to 100lux, such as 95lux, 96lux, 98lux, etc.; this ensures that the target detection method of brightness detection within the illumination area (40lux to 100lux) remains consistent, avoiding brightness changes caused by sudden correction of brightness values, thereby affecting the user experience.

[0064] The second is to determine the target detection mode of the TFT light sensor based on the same comparison reference, that is, the first threshold and the second threshold are the same, which is recorded as the third threshold in this example for illustration.

[0065] Determine whether the detection parameter is less than a preset third threshold value. The value range of the third threshold value can also be determined as the current range corresponding to the illumination range of 40lux to 100lux. If the detection parameter is less than the third threshold value, the target detection mode of the TFT light sensor is determined to be off detection; that is, the detection parameter is less than the third threshold value, indicating that the current environment is a darker environment. If the detection parameter is not less than the third threshold value, the target detection mode of the TFT light sensor is determined to be on detection; that is, the detection parameter is greater than the third threshold value, indicating that the current environment is a brighter environment. Using the same comparison benchmark to determine the target detection mode of the TFT light sensor can ensure that the critical points of the change of the target detection mode from a bright environment to a dark environment or from a dark environment to a bright environment are the same, avoiding inconsistent standards.

[0066] Step S30: adopting the target detection method to perform brightness detection on the current brightness environment.

[0067] In step S30, the first sensing device for shading can be used as a device for brightness detection. Therefore, after determining the target detection method, if the target detection method is the same as the detection method of the current first sensing device, the driving voltage and driving voltage timing signal of the first sensing device remain unchanged; if the target detection method changes relative to the detection method of the current first sensing device, for example, when the off detection changes to the on detection, the first sensing device can be controlled to be turned on, and the driving voltage can be adjusted at the same time, such as increasing the driving voltage; the detection frequency can remain unchanged, so the driving voltage timing signal can remain unchanged. When the on detection changes to the off detection, the first sensing device can be controlled to be turned on, and the driving voltage can be adjusted at the same time, such as lowering the driving voltage; the detection frequency can remain unchanged, so the driving voltage timing signal can remain unchanged. In some other implementations, corresponding detection frequencies can be designed for on detection and off detection respectively. At this time, after the target detection method changes relative to the current detection method, the driving voltage timing signal can be adjusted accordingly, and the driving voltage timing signal corresponds to the detection frequency.

[0068] Furthermore, the brightness detection process can be as follows: first, obtain the third photocurrent when the first sensing device is in the target detection mode; then, obtain the brightness detection result of the current brightness environment based on the third photocurrent. The brightness detection result corresponding to the conversion based on the third photocurrent is an existing method and will not be repeated in this embodiment. If the current brightness environment does not cause the target detection mode to change, the third photocurrent is the first photocurrent. Finally, since the third photocurrent is obtained by off-state detection in a dark environment, or by on-state detection in a bright environment, segmented detection is adopted based on the brightness environment to ensure the accuracy of brightness detection, and effectively suppress the influence of current drift of the device on the detection result.

[0069] Take the ambient brightness of 20lux and the accuracy deviation of 30% as an example. The accuracy deviation of 30% is a commonly used production standard; at this time, a drift of 6lux will affect the accuracy, while a drift of 15lux is allowed under 50lux. The lower the ambient brightness, the greater the impact of drift on accuracy. The method in this embodiment can ensure that the deviation of the detection result in a dark environment with low brightness and a bright environment with high brightness can be within 30%, which is relatively stable.

[0070] Therefore, the brightness detection method provided in this embodiment first obtains the detection parameters of the TFT light sensor under the current brightness environment; then, according to the detection parameters, determines whether the target detection mode of the TFT light sensor is off detection or on detection; then, when the detection parameters correspond to a dark environment, the target detection mode is off detection; when the detection parameters correspond to a bright environment, the target detection mode is on detection; finally, the target detection mode is used to perform brightness detection on the current brightness environment. In this embodiment, the target detection mode is determined by the detection parameters, and different detection modes are used in different brightness environments to realize brightness segmented detection. In both dark and bright environments, current drift can be well suppressed to ensure that the detection results are more accurate and stable.

[0071] See also Figure 7 In another embodiment of the present invention, a brightness detection system 100 is provided. The brightness detection system 100 includes: a driving chip 110, a detection circuit 120, and a TFT light sensor 130.

[0072] The detection circuit 120 is connected to the TFT light sensor 130 and is used to detect the detection parameters generated by the TFT light sensor 130 in the current brightness environment. The driving chip 110 is connected to the detection circuit 120 and the TFT light sensor 130 respectively, and is used to determine whether the target detection mode of the TFT light sensor 130 is off detection or on detection according to the detection parameters; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; when the detection parameters correspond to a bright environment, the target detection mode is on detection; the target detection mode is used to perform brightness detection on the current brightness environment.

[0073] Specifically, the detection circuit 120 includes: a first detection circuit 121 and a second detection circuit 122; the TFT light sensor 130 includes: a first sensing device 131 and a second sensing device 132; the first sensing device 131 is in a non-light-shielding state, and the second sensing device 132 is in a light-shielding state. When used in a mobile phone, the TFT light sensor 130 can be integrated into the screen, and the position can be at the edge of the visible display area 402 outside the effective display area 401 of the screen; when manufacturing the first sensing device 131 and the second sensing device 132, the first sensing device 131 and the second sensing device 132 can be shielded by arranging a BM (Black Matrix) layer for the first sensing device 131 and the second sensing device 132, and then a hole is opened in the BM layer corresponding to the position of the first sensing device 131, for example, a 16um strip hole can be opened to make the first sensing device 131 in a non-light-shielding state, such as Figure 8 shown.

[0074] The first detection circuit 121 is connected to the first sensing device 131 and is used to detect the first photocurrent generated by the first sensing device 131; the second detection circuit 122 is connected to the second sensing device 132 and is used to detect the second photocurrent generated by the second sensing device 132; the driving chip 110 is respectively connected to the first detection circuit 121, the second detection circuit 122, the first sensing device 131 and the second sensing device 132, and is used to obtain detection parameters based on the first photocurrent and the second photocurrent.

[0075] It should be noted that, in this embodiment, both the first detection circuit 121 and the second detection circuit 122 can adopt the circuit structure adopted by the voltage detection method or the charge integration detection method in the above-mentioned embodiments, such as Figure 4 and Figure 5 Meanwhile, the various functional steps executed by the driver chip 110 in this embodiment can refer to the description in the aforementioned method embodiment, and will not be repeated in this embodiment.

[0076] In some embodiments, the driver chip 110 may be a Touch In-cell TDDI (Touch and Display Driver Integration) driver chip 110. Specifically, there are a plurality of first sensing devices 131 and second sensing devices 132. Figure 7Three are shown as examples, which should not be understood as limiting the present invention. The gates (Gate) of the first sensing device 131 and the second sensing device 132 are both connected to the first output terminal of the driver chip 110, the sources (Source) of the first sensing device 131 and the second sensing device 132 are both connected to the second output terminal of the driver chip 110, the drain of the first sensing device 131 is both connected to the input terminal of the first detection circuit 121, and the drain of the second sensing device 132 is both connected to the input terminal of the second detection circuit 122; the output terminal of the first detection circuit 121 and the output terminal of the second detection circuit 122 are respectively connected to the first input terminal and the second input terminal of the driver chip 110. In addition, the first detection circuit 121 and the second detection circuit 122 can also be integrated in the driver chip 110 to realize the current detection function, such as Fig. 9 and Fig.10 A brightness detection system 200 is shown.

[0077] See also Fig.10 , the detection circuit 120 is used as a voltage detection method for explanation. When it is determined that the shutdown detection is used in a dark environment, the driver chip 110 can control the switch SW1 of the first detection circuit 121 and the second detection circuit 122 to be closed and the switch SW2 to be opened, and then the gates of the first sensing device 131 and the second sensing device 132 are both set to a low level to turn off the first sensing device 131 and the second sensing device 132; at the same time, the driver chip 110 outputs a driving signal to the source, and the driving signal waveform is as follows Figure 6 As shown; at this time, the photocurrent detected by the first detection circuit 121 can realize the brightness detection calculation. When it is determined that the conduction detection is used in a bright environment, the driver chip 110 can control the switch SW1 of the first detection circuit 121 and the second detection circuit 122 to turn on and the switch SW2 to turn off, and then output the driving signal to the gate and source of the first sensing device 131 and the second sensing device 132. The gate and source driving signal waveforms are as shown Figure 6 As shown; at this time, the photocurrents detected by the first detection circuit 121 are all current values ​​when the first sensing device 131 and the second sensing device 132 are in the on state, so the photocurrent detected by the first detection circuit 121 can realize the brightness detection calculation.

[0078] It should be noted that the specific implementation and technical effects of the brightness detection system 100 provided in the embodiment of the present invention are the same as those of the aforementioned method embodiment. For the sake of brief description, for parts not mentioned in this embodiment, reference may be made to the corresponding contents in the aforementioned method embodiment.

[0079] See also Fig.11 Based on the same inventive concept, another embodiment of the present invention further provides a brightness detection device 300, the brightness detection device 300 comprising:

[0080] The acquisition module 301 is used to acquire the detection parameters of the TFT light sensor under the current brightness environment; the determination module 302 is used to determine whether the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; when the detection parameters correspond to a bright environment, the target detection mode is the on detection; the detection module 303 is used to use the target detection mode to perform brightness detection on the current brightness environment.

[0081] As an optional implementation, the TFT light sensor includes a first sensing device and a second sensing device; the acquisition module 301 is specifically used for:

[0082] Obtain a first photocurrent of the first sensing device under a current brightness environment, and obtain a second photocurrent of the second sensing device under a current brightness environment; wherein the first sensing device is in a non-light-shielding state, and the second sensing device is in a light-shielding state; obtain the detection parameter based on the first photocurrent and the second photocurrent.

[0083] As an optional implementation, the acquisition module 301 is further specifically configured to:

[0084] The first photocurrent and the second photocurrent are compensated to obtain a first compensation current and a second compensation current; and the detection parameter is obtained according to the first compensation current and the second compensation current.

[0085] As an optional implementation, the acquisition module 301 is further specifically configured to:

[0086] The difference between the first photocurrent and the second photocurrent is determined as the detection parameter.

[0087] As an optional implementation manner, the detection module 303 is specifically configured to:

[0088] A third photocurrent is obtained when the first sensing device is in the target detection mode; and a brightness detection result of the current brightness environment is obtained according to the third photocurrent.

[0089] As an optional implementation manner, the determining module 302 is specifically configured to:

[0090] Determine whether the detection parameter is less than a preset first threshold or greater than a preset second threshold; if the detection parameter is less than the first threshold, determine that the target detection mode of the TFT light sensor is off detection; if the detection parameter is greater than the second threshold, determine that the target detection mode of the TFT light sensor is on detection.

[0091] As an optional implementation manner, the value range of the first threshold and the second threshold is a parameter range corresponding to the illumination range of 40lux to 100lux.

[0092] It should be noted that the specific implementation and technical effects of a brightness detection device 300 provided in an embodiment of the present invention are the same as those of the aforementioned method embodiment. For the sake of brief description, for matters not mentioned in the device embodiment, reference may be made to the corresponding contents in the aforementioned method embodiment.

[0093] Based on the same inventive concept, another embodiment of the present invention also provides an electronic device, including a processor and a memory, wherein the memory is coupled to the processor, and the memory stores instructions, and when the instructions are executed by the processor, the electronic device executes the steps of any one of the method embodiments described in the foregoing method embodiments.

[0094] It should be noted that in the electronic device provided by the embodiment of the present invention, when the instruction is executed by the processor, the specific implementation of each step and the technical effect produced are the same as those in the aforementioned method embodiment. For the sake of brief description, the parts not mentioned in this embodiment can refer to the corresponding contents in the aforementioned method embodiment.

[0095] Based on the same inventive concept, another embodiment of the present invention further provides a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the steps of the method described in any one of the aforementioned method embodiments are implemented.

[0096] It should be noted that in the computer-readable storage medium provided in the embodiment of the present invention, when the program is executed by the processor, the specific implementation of each step and the technical effect produced are the same as those in the aforementioned method embodiment. For the sake of brief description, the parts not mentioned in this embodiment can refer to the corresponding content in the aforementioned method embodiment.

[0097] The term "and / or" that appears in this article is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the objects associated before and after are in an "or" relationship; the word "comprising" does not exclude the existence of elements or steps that are not listed in the claims. The word "one" or "an" placed before an element does not exclude the existence of multiple such elements. The present invention can be implemented with the aid of hardware including several different elements and with the aid of appropriately programmed computers. In a unit claim that lists several devices, several of these devices may be embodied by the same hardware item. The use of the words first, second, and third, etc. does not indicate any order. These words can be interpreted as names.

[0098] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0099] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0100] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0101] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0102] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0103] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A brightness detection method, characterized in that: The method comprises: Acquire detection parameters of the TFT light sensor under the current brightness environment, wherein the detection parameters are used to characterize the ambient brightness; According to the detection parameter, determining whether the target detection mode of the TFT light sensor is off detection or on detection; wherein, when the detection parameter corresponds to a dark environment, the target detection mode is the off detection; when the detection parameter corresponds to a bright environment, the target detection mode is the on detection, wherein the off detection means detecting the brightness of the environment by the current of the TFT light sensor in the off state, and the on detection means detecting the brightness of the environment by the current of the TFT light sensor in the on state; The target detection method is adopted to perform brightness detection on the current brightness environment.

2. The method according to claim 1, characterized in that The TFT light sensor includes a first sensing device and a second sensing device; the step of obtaining the detection parameters of the TFT light sensor under the current brightness environment includes: Acquire a first photocurrent of the first sensing device under a current brightness environment, and acquire a second photocurrent of the second sensing device under a current brightness environment; wherein the first sensing device is in a non-light-shielding state, and the second sensing device is in a light-shielding state; The detection parameter is obtained according to the first photocurrent and the second photocurrent.

3. The method according to claim 2, characterized in that The obtaining the detection parameter according to the first photocurrent and the second photocurrent includes: Performing compensation processing on the first photocurrent and the second photocurrent to obtain a first compensation current and a second compensation current; The detection parameter is obtained according to the first compensation current and the second compensation current.

4. The method according to claim 2, characterized in that: The obtaining the detection parameter according to the first photocurrent and the second photocurrent includes: The difference between the first photocurrent and the second photocurrent is determined as the detection parameter.

5. The method according to claim 2, characterized in that: The adopting the target detection method to perform brightness detection on the current brightness environment includes: acquiring a third photocurrent when the first sensing device is in the target detection mode; A brightness detection result of the current brightness environment is obtained according to the third photocurrent.

6. The method according to claim 1, characterized in that Determining, according to the detection parameter, that the target detection mode of the TFT light sensor is off detection or on detection includes: Determine whether the detection parameter is less than a preset first threshold or greater than a preset second threshold; If the detection parameter is less than the first threshold, determining that the target detection mode of the TFT light sensor is off detection; If the detection parameter is greater than the second threshold, it is determined that the target detection mode of the TFT light sensor is conduction detection.

7. The method according to claim 6, characterized in that The value range of the first threshold and the second threshold is a parameter range corresponding to the illumination range of 40lux to 100lux.

8. A brightness detection device, characterized in that: The device comprises: An acquisition module, used to acquire detection parameters of the TFT light sensor under the current brightness environment, wherein the detection parameters are used to characterize the ambient brightness; a determination module, configured to determine, according to the detection parameter, whether the target detection mode of the TFT light sensor is off detection or on detection; wherein, when the detection parameter corresponds to a dark environment, the target detection mode is the off detection; when the detection parameter corresponds to a bright environment, the target detection mode is the on detection, wherein the off detection means detecting the brightness of the environment by the current of the TFT light sensor in the off state, and the on detection means detecting the brightness of the environment by the current of the TFT light sensor in the on state; The detection module is used to perform brightness detection on the current brightness environment by adopting the target detection method.

9. A brightness detection system, characterized in that: include: Driver chip, detection circuit, TFT light sensor; The detection circuit is connected to the TFT light sensor and is used to detect the detection parameters generated by the TFT light sensor under the current brightness environment, wherein the detection parameters are used to characterize the ambient brightness; The driving chip is connected to the detection circuit and the TFT light sensor respectively, and is used to determine whether the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters; wherein, when the detection parameters correspond to a dark environment, the target detection mode is the off detection; when the detection parameters correspond to a bright environment, the target detection mode is the on detection, the off detection means detecting the brightness of the environment by the current of the TFT light sensor in the off state, and the on detection means detecting the brightness of the environment by the current of the TFT light sensor in the on state; the target detection mode is used to perform brightness detection on the current brightness environment.

10. The brightness detection system according to claim 9, characterized in that: The detection circuit includes: a first detection circuit and a second detection circuit; the TFT light sensor includes: a first sensing device and a second sensing device; the first sensing device is in a non-light-shielding state, and the second sensing device is in a light-shielding state; The first detection circuit is connected to the first sensing device and is used to detect a first photocurrent generated by the first sensing device; The second detection circuit is connected to the second sensing device and is used to detect the second photocurrent generated by the second sensing device; The driving chip is respectively connected to the first detection circuit, the second detection circuit, the first sensing device and the second sensing device, and is used to obtain the detection parameter according to the first photocurrent and the second photocurrent.

11. An electronic device, characterized in that: The electronic device comprises a processor and a memory, wherein the memory is coupled to the processor and stores instructions, and when the instructions are executed by the processor, the electronic device executes the steps of the method according to any one of claims 1 to 7.

12. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the steps of the method described in any one of claims 1 to 7 are implemented.

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