Light-emitting device and electronic device including the light-emitting device

Abstract

This application relates to a light-emitting device, comprising: a first electrode; a second electrode; m emitting units between the first electrode and the second electrode; and m-1 charge-generating layers, each of the m-1 charge-generating layers being located between two adjacent emitting units and comprising m-1 n-type charge-generating layers and m-1 p-type charge-generating layers. Each of the m emitting units includes a hole transport region, an emitting layer, and an electron transport region. The first hole transport region in the first emitting unit closest to the first electrode may include a hole transfer layer and a hole injection layer and / or a hole transport layer. The hole transfer layer may be composed of C1-C atoms containing phosphine oxide groups (P=O), phosphine sulfide groups (P=S), or nitrogen atoms lacking π electrons. 60 A single layer of electron-transfer compounds consisting of cyclic groups or any combination thereof. The highest occupied molecular orbital energy level of the hole-transfer layer can be from about -6.0 eV to about -5.3 eV.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0076759, filed with the Korean Intellectual Property Office on June 23, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more aspects of the embodiments of this disclosure relate to light-emitting devices and electronic devices including light-emitting devices. Background Technology

[0004] Light-emitting devices (LEDs) are self-emitting devices that can have wide viewing angles, high contrast, short response times, and / or excellent brightness, driving voltage, and / or response speed characteristics, and can produce full-color images.

[0005] An exemplary light-emitting device includes a first electrode on a substrate, and a hole transport region, an emitter layer, an electron transport region, and a second electrode sequentially stacked on the first electrode. Holes supplied by the first electrode can move toward the emitter layer through the hole transport region, and electrons supplied by the second electrode can move toward the emitter layer through the electron transport region. Charge carriers (e.g., holes and electrons) can recombine in the emitter layer to generate excitons. These excitons can transition from an excited state to a ground state, thereby generating light. Summary of the Invention

[0006] One or more aspects of the embodiments of this disclosure relate to a highly efficient light-emitting device having improved hole injection (e.g., injection characteristics) from the hole transport region to the emitting layer.

[0007] Other aspects will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practicing embodiments of the present disclosure.

[0008] One or more exemplary embodiments of this disclosure provide a light-emitting device, including a first electrode;

[0009] The second electrode facing the first electrode;

[0010] m transmitting units located between the first electrode and the second electrode; and

[0011] There are m-1 charge generation layers, each located (e.g., selected from) two adjacent emitter units among the m emitter units, and includes m-1 n-type charge generation layers and m-1 p-type charge generation layers.

[0012] Where m can be 2 or an integer greater than 2.

[0013] Each of the m transmitting units may include a hole transport region, an emission layer, and an electron transport region arranged sequentially.

[0014] The first hole transport region in the first emitter unit closest to the first electrode among the m emitter units may include at least one of a hole transfer layer, a hole injection layer, and a hole transport layer arranged sequentially between the first electrode and the first emitter layer in the first emitter unit.

[0015] The hole transfer layer may be a single layer containing an electron transport compound (e.g., composed of an electron transport compound).

[0016] The electron transport compound may contain a phosphine oxide group (P=O), a phosphine sulfide group (P=S), or a C1-C group containing nitrogen with a lack of π electrons. 60 Cyclic groups or any combination thereof, and

[0017] The highest occupied molecular orbital (HOMO) energy level of the hole transfer layer can be from about -6.0 electron volts (eV) to about -5.3 eV.

[0018] One or more exemplary embodiments of this disclosure provide an electronic device including the light-emitting device. Attached Figure Description

[0019] The above and other aspects, features and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0020] Figure 1 This is a schematic cross-sectional view of the light-emitting device according to the implementation scheme;

[0021] Figure 2 It is a schematic cross-sectional view of the light-emitting device according to the implementation scheme; and

[0022] Figure 3 This is a schematic cross-sectional view of another light-emitting device according to the implementation scheme. Detailed Implementation

[0023] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals refer throughout to the same elements and may not be described repeatedly. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the following description, with reference to the accompanying drawings, focuses solely on the embodiments to explain aspects of the present description. As used herein, the term “and / or” includes any combination and all combinations of one or more of the relevant listed items. Throughout the disclosure, the expression “at least one of a, b, and c” may mean only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0024] As used herein, the singular forms “a,” “an,” and “the” are intended to also include the plural forms unless the context clearly indicates otherwise. It should be further understood that the terms “includes,” “including,” “comprises,” and / or “comprising,” when used in this specification, specify the presence of a given feature, step, operation, element, and / or component, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, or groups thereof. Furthermore, the use of “may” when describing embodiments of this disclosure means “one or more embodiments of this disclosure.”

[0025] According to one or more embodiments, the light-emitting device may include: a first electrode; a second electrode facing the first electrode; m emitting units located between the first electrode and the second electrode; and m-1 charge-generating layers, each of the m-1 charge-generating layers being located (e.g., selected from) two adjacent emitting units among the m emitting units (e.g., interposed between the m emitting units), and (collectively) including m-1 n-type charge-generating layers and m-1 p-type charge-generating layers, where m may be an integer of 2 or greater than 2; each of the m emitting units may each include a hole transport region, an emitting layer, and an electron transport region arranged sequentially; the first hole transport region included in the first emitting unit closest to the first electrode among the m emitting units may include a hole transfer layer and a hole injection layer and / or a hole transport layer arranged sequentially between the first electrode and the first emitting layer in the first emitting unit; the hole transfer layer may be a single layer containing an electron transport compound (e.g., composed of an electron transport compound); the electron transport compound may contain phosphine oxide groups (P=O), phosphine sulfide groups (P=S), or C1-C containing π-electron-deficient nitrogen. 60 The cyclic group or any combination thereof, and the highest occupied molecular orbital (HOMO) energy level of the hole transfer layer can be from about -6.0 eV to about -5.3 eV.

[0026] In this specification, the lowest unoccupied molecular orbital (LUMO) level, the highest occupied molecular orbital (HOMO) level, the triplet level, and the work function can each be measured as described herein, but the implementation is not limited thereto.

[0027] LUMO levels, highest occupied molecular orbital (HOMO) levels, triplet levels, and work functions can be measured using cyclic voltammetry (CV), and an exemplary cyclic voltammetric apparatus (e.g., a potentiostat) is the Meridian SP2 (ZIVESP2) from Wonatech. The sample solution and electrolyte solution used in the measurements are as follows: ferrocene is used as the reference material, and (Bu)4NPF6 is used as the electrolyte.

[0028] Sample solution of the compound to be measured: 5 × 10 -3 M is a dichloromethane solution.

[0029] Ferrocene sample solution: 5×10 -3 M is a dichloromethane solution.

[0030] (Bu)4NPF6 electrolyte solution: 0.1M acetonitrile solution.

[0031] To measure and calculate the HOMO of each compound, the E-values ​​of the compounds were plotted. we -I relationship diagram (volt-ampere diagram) and E with reference material (e.g., ferrocene). we -I relationship plots were compared. Tangents were drawn at points where the current increased rapidly on the graph, and the voltage at each point where the tangent met (intersected or crossed) the x-axis was recorded as the unreferenced HOMO. The HOMO level of ferrocene was set to -4.8 eV, and the HOMO level of the compound was calculated relative to a ferrocene reference.

[0032] In some implementations, m can be 3 or greater than 3.

[0033] Figure 1 This is a schematic view of the light-emitting device 10 according to the embodiment. (e.g.) Figure 1As shown, the light-emitting device 10 according to an embodiment may include a first electrode 110; a second electrode 190 facing the first electrode 110; m emitting units (150-1, 150-2, and 150-3) (commonly 150) stacked between the first electrode 110 and the second electrode 190; and m-1 charge-generating layers (154-1 and 154-2), the m-1 charge-generating layers (154-1 and 154-2) being located between two adjacent emitting units among the m emitting units (150-1, 150-2, and 150-3) and including an n-type charge-generating layer (154-1a and 154-2a) and a p-type charge-generating layer (154-1b and 154-2b).

[0034] There are no particular limitations on the "emission unit," as long as it is capable of emission. In some embodiments, the emission unit may include at least one emission layer. In some embodiments, in addition to the emission layer, the emission unit may further include an organic layer.

[0035] like Figure 1 As shown in the example, the light-emitting device 10 may include m emitting units (150-1, 150-2, and 150-3), and m may be an integer of 2 or greater than 2, such as 3 or greater than 3. m (which represents the number of emitting units) can be selected as needed, and there is no particular upper limit to the number of emitting units. In some embodiments, the light-emitting device may include 2, 3, 4, 5, or 6 emitting units.

[0036] The light-emitting device 10 may include charge-generating layers (154-1 and 154-2) located between two adjacent emitting units (150-1, 150-2, and 150-3) among m emitting units. Here, the term "adjacent" refers to the arrangement (e.g., spatial) relationship of layers positioned closest to each other within a layer. In some embodiments, the term "two adjacent emitting units" refers to two emitting units arranged closest to each other among a plurality of emitting units. The term "adjacent" may, in some embodiments, refer to two layers that are physically in contact with each other in some cases, or in some embodiments, another layer may be located between said two layers. In some embodiments, the emitting unit adjacent to the second electrode may refer to the emitting unit closest to the second electrode among a plurality of emitting units. Furthermore, the second electrode may be in physical contact with (adjacent) emitting units, or an additional layer (e.g., in addition to the emitting units) may be disposed between the second electrode and the emitting units. In some embodiments, an electron transport layer may be located between the second electrode and (adjacent) emitting units. Conversely, a charge-generating layer may be located between two adjacent emitting units.

[0037] A charge-generating layer can act as a cathode for one of two adjacent emitting units (e.g., one of two adjacent emitting units) by generating electrons, and as an anode for the remaining emitting units (e.g., the other of two adjacent emitting units) by generating holes. The charge-generating layer can be used to separate adjacent emitting units without being directly connected to electrodes. A light-emitting device comprising m emitting units may include m-1 charge-generating layers.

[0038] The charge generation layers (154-1 and 154-2) may each comprise an n-type charge generation layer (154-1a and 154-2a) and a p-type charge generation layer (154-1b and 154-2b), respectively. Here, the n-type charge generation layers (154-1a and 154-2a) and the p-type charge generation layers (154-1b and 154-2b) can be in direct contact with each other to form a pn junction. Due to the pn junction, electrons and holes can be generated simultaneously (e.g., concurrently) between the n-type charge generation layers (154-1a and 154-2a) and the p-type charge generation layers (154-1b and 154-2b). The generated electrons can be transferred through the n-type charge generation layers (154-1a and 154-2a) to one of the two adjacent emitting cells. The generated holes can be transferred to another of the two adjacent emitting units via the p-type charge generation layers (154-1b and 154-2b). Furthermore, each of the charge generation layers (154-1 and 154-2) may include an n-type charge generation layer (154-1a and 154-2a) and a p-type charge generation layer (154-1b and 154-2b), and the light-emitting device 10 comprising m-1 charge generation layers (154-1 and 154-2) may include m-1 n-type charge generation layers (154-1a and 154-2a) and m-1 p-type charge generation layers (154-1b and 154-2b).

[0039] The term "n-type" refers to the properties of an n-type semiconductor, such as the ability to inject and / or transport electrons. The term "p-type" refers to the properties of a p-type semiconductor, such as the ability to inject and / or transport holes.

[0040] Each of the m emission units (150-1, 150-2, and 150-3) may include a hole transport region (151-1, 151-2, and 151-3), an emission layer (152-1, 152-2, and 152-3), and an electron transport region (153-1, 153-2, and 153-3) in the following specified order, and each of the m electron transport regions (153-1, 153-2, and 153-3) included in the m emission units (150-1, 150-2, and 150-3) may contain an electron transport material.

[0041] Here, the electron transport materials contained in the m electron transport regions (153-1, 153-2 and 153-3) can be the same or different from each other.

[0042] The first hole transport region 151-1, which is the closest to the first electrode 110 among the m transmitting units (150-1, 150-2 and 150-3), may include at least one of the hole transfer layer 151-1c, the hole injection layer 151-1a, and the hole transport layer 151-1b, which may be arranged sequentially between the first electrode 110 and the first transmitting layer 152-1 in the first transmitting unit 150-1.

[0043] In some embodiments, the first hole transport region 151-1 may include a hole transfer layer 151-1c, a hole injection layer 151-1a, and a hole transport layer 151-1b that may be sequentially arranged between the first electrode 110 and the first emitter layer 152-1.

[0044] Hole transfer layer 151-1c may be a single layer containing an electron transport compound (e.g., composed of an electron transport compound), which may contain phosphine oxide groups (P=O), phosphine sulfide groups (P=S), or C1-C groups containing π-electron-deficient nitrogen. 60 Cyclic groups or any combination thereof, and the HOMO level of hole transfer layer 151-1c can be from about -6.0 eV to about -5.3 eV.

[0045] In some implementations, the electron transport compound may be represented by Formula 1 or Formula 2:

[0046] Formula 1

[0047] [Ar1] a1 -[(L1) b1 -R1] c1

[0048] Formula 2

[0049] [Ar2] a2 -[(L2) b2 -R2] c2 ,

[0050] Among them, in Equations 1 and 2,

[0051] Ar1, Ar2, L1, and L2 can each be independently unsubstituted or substituted by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0052] a1 and a2 can each be 1, 2, or 3 independently.

[0053] b1 and b2 can each be 0, 1, 2, 3, 4, or 5 independently.

[0054] R1 and R2 can each be independently unsubstituted or substituted by at least one R. 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q1)(Q2)(Q3), -C(=O)(Q1), -S(=O)2(Q1), -P(=O)(Q1)(Q2) or -P(=S)(Q1)(Q2),

[0055] Q1 to Q3 can each be independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy groups; or each unsubstituted or deuterated, -F, cyano groups, C1-C 60 Alkyl groups, C1-C 60 C3-C substituted with alkoxy groups, phenyl groups, biphenyl groups, or any combination thereof 60 Carbocyclic groups or C1-C 60 Heterocyclic groups, and

[0056] c1 and c2 can each be 1, 2, 3, 4 or 5 independently.

[0057] At least one of Ar1, L1, and R1 can be independently unsubstituted or substituted by at least one R. 10a Substituted C1-C nitrogen containing π-electron-deficient atoms 60 Cyclic groups, and

[0058] At least one R2 group can be -P(=O)(Q1)(Q2) or -P(=S)(Q1)(Q2).

[0059] R 10a C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups and C1-C of nitrogen containing π-electron-deficient nitrogen 60 The cyclic groups can each be the same as those described in the "General Definition of the Term".

[0060] In some embodiments, at least one of Ar1, L1, and R1 may be independently selected from: pyridine groups, pyrimidine groups, pyrazine groups, pyridazine groups, and triazine groups; and

[0061] Each is at least one R 10a Substituted pyridine, pyrimidine, pyrazine, pyridazine, and triazine groups.

[0062] In some implementations, at least one of Ar2, L2, and R2 may be independently unsubstituted or substituted by at least one R. 10a Replacement of π-electron-rich C3-C 60 Cyclic groups.

[0063] C3-C rich in π electrons 60 Cyclic groups can be the same as those described in the "General Definition of Terms".

[0064] In some embodiments, at least one of Ar2, L2, and R2 may be independently selected from: phenyl groups, naphthyl groups, anthracene groups, carbazole groups, and dibenzofuran groups; and

[0065] Each is at least one R 10a Substituted phenyl groups, naphthyl groups, anthracene groups, carbazole groups, and dibenzofuran groups.

[0066] The electron transport compound contained in the hole transfer layer may be selected from compound 1 to compound 54:

[0067]

[0068]

[0069]

[0070]

[0071] In some implementations, the HOMO energy level difference between the hole transfer layer 151-1c and the hole injection layer 151-1a or hole transport layer 151-1b adjacent to the hole transfer layer 151-1c can be 0.15 eV or greater than 0.15 eV.

[0072] In some implementations, the hole transfer layer 151-1c may be adjacent to the hole injection layer 151-1a, and the HOMO energy level difference between the hole transfer layer 151-1c and the hole injection layer 151-1a may be 0.15 eV or greater than 0.15 eV.

[0073] In some implementations, the hole transfer layer 151-1c may be adjacent to the hole transport layer 151-1b, and the HOMO energy level difference between the hole transfer layer 151-1c and the hole transport layer 151-1b may be 0.15 eV or greater than 0.15 eV.

[0074] In some embodiments, the first emission layer 152-1 may comprise a compound represented by Formula 3:

[0075] Formula 3

[0076] [Ar3] a3 -[(L3) b3 -R3] c3 ,

[0077] In Equation 3,

[0078] Ar3 and L3 can each be independently unsubstituted or substituted by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0079] a3 can be 1, 2, or 3.

[0080] b3 can be an integer from 0 to 5.

[0081] R3 can be hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, unsubstituted, or a group containing at least one R. 10a Replacement C1-C 60 alkyl groups, unsubstituted or with at least one R 10a Replacement C2-C 60 Alkenyl groups, unsubstituted or with at least one R 10a Replacement C2-C 60 The alkynyl group, unsubstituted or with at least one R 10a Replacement C1-C 60 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q1)(Q2)(Q3), -N(Q1)(Q2), -B(Q1)(Q2), -C(=O)(Q1), -S(=O)2(Q1) or -P(=O)(Q1)(Q2), and

[0082] c3 can be an integer from 1 to 5.

[0083] Q1 to Q3 can each be independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy groups; or each unsubstituted or deuterated, -F, cyano groups, C1-C 60 Alkyl groups, C1-C 60 C3-C substituted with alkoxy groups, phenyl groups, biphenyl groups, or any combination thereof 60 Carbocyclic groups or C1-C 60 Heterocyclic groups, and

[0084] At least one of Ar3, L3, and R3 can be independently unsubstituted or substituted by at least one R. 10a Replacement C3-C 60 Carbon ring group.

[0085] In some implementations, the first emission layer 152-1 may contain a compound represented by Formula 3 as the host.

[0086] In some implementations, the electron transport compound and the compound represented by Formula 3 may be the same as or different from each other.

[0087] In some embodiments, the first transmitting unit 150-1 may further include an electron blocking layer located between the hole injection layer 151-1a or the hole transport layer 151-1b and the first transmitting layer 152-1.

[0088] In some embodiments, the electron blocking layer may comprise a material having a triplet energy level higher than that of the compound contained in the first emission layer 152-1.

[0089] In some implementations, the m-1 hole transport regions (151-2 and 151-3) other than the first hole transport region 151-1 may not include the hole transfer layer 151-c.

[0090] In some implementations, the m-1 hole transport regions (151-2 and 151-3) other than the first hole transport region 151-1 may include a hole transport layer (151-2b and 151-3b), a hole injection layer (151-2a and 151-3a), and / or an electron blocking layer, and the m electron transport regions (153-1, 153-2, and 153-3) may include a hole blocking layer, an electron transport layer (153-1a, 153-2a, and 153-3a), and / or an electron injection layer (153-1b, 153-2b, and 153-3b).

[0091] In the light-emitting device 10, m can be 3 or 4.

[0092] In some embodiments, the first electrode 110 may be an anode, and the second electrode 190 may be a cathode.

[0093] In some implementations, the maximum emission wavelength of the light emitted from the m emission units (150-1, 150-2, and 150-3) can be the same as each other.

[0094] In one or more embodiments, the m emitting units (150-1, 150-2 and 150-3) may each be designed to emit blue light based on a maximum emission wavelength of about 440 nm to about 510 nm with a front peak wavelength.

[0095] In some embodiments, the maximum emission wavelength of light emitted from at least one of the m emitting units may be different from the maximum emission wavelength of light emitted from at least one of the other emitting units. In some embodiments, in a light-emitting device comprising stacked first and second emitting units, the maximum emission wavelength of light emitted from the first emitting unit may be different from the maximum emission wavelength of light emitted from the second emitting unit. In this case, the emitting layer of the first emitting unit and the emitting layer of the second emitting unit may each independently comprise: i) a monolayer structure comprising a single material (e.g., composed of a single material), ii) a monolayer structure comprising multiple different materials, or iii) a multilayer structure having multiple layers comprising multiple different materials. Therefore, the light emitted from the first or second emitting unit may be monochromatic or mixed-color light. In some embodiments, in a light-emitting device comprising stacked first, second, and third emitting units, the maximum emission wavelength of light emitted from the first emitting unit may be the same as the maximum emission wavelength of light emitted from the second emitting unit, and the maximum emission wavelength of light emitted from the first emitting unit may be different from the maximum emission wavelength of light emitted from the third emitting unit. In some implementations, the maximum emission wavelength of light emitted from the first emission unit, the maximum emission wavelength of light emitted from the second emission unit, and the maximum emission wavelength of light emitted from the third emission unit may be different from each other.

[0096] In some embodiments, the m emission layers (152-1, 152-2, and 152-3) included in the m emission units (150-1, 150-2, and 150-3) may each independently contain phosphorescent dopants, fluorescent dopants, delayed fluorescence materials, or any combination thereof.

[0097] In some implementations, the m emission layers (152-1, 152-2, and 152-3) may each contain a phosphorescent dopant, a fluorescent dopant, or a delayed fluorescence material.

[0098] In some embodiments, at least one of the m emission layers (152-1, 152-2, and 152-3) may contain a phosphorescent dopant, and the other emission layers may contain a fluorescent dopant; at least one of the m emission layers (152-1, 152-2, and 152-3) may contain a phosphorescent dopant, and the other emission layers may contain a delayed fluorescence material; or at least one of the m emission layers (152-1, 152-2, and 152-3) may contain a fluorescent dopant, and the other emission layers may contain a delayed fluorescence material.

[0099] In some embodiments, at least one of the m emission layers (152-1, 152-2, and 152-3) may contain a phosphorescent dopant, at least one of the m emission layers (152-1, 152-2, and 152-3) may contain a fluorescent dopant, and the other (e.g., the remaining) emission layers may contain a delayed fluorescence material.

[0100] In some embodiments, the ratio of the delayed fluorescence component of the light-emitting device 10 to the sum of the fluorescence component and the delayed fluorescence component (e.g., from all the emission components extracted from the measurement of transient electroluminescence (EL)) may be 30 percent (%) or higher.

[0101] Here, the device used to measure the delayed fluorescence component is generally referred to as a transient EL (hereinafter, "Tr.EL"), and a Tr.EL may include an oscilloscope for converting light or electrical signals, a pulse generator for applying square wave pulses, a power supply for converting alternating current (AC) voltage to direct current (DC) voltage, a chamber for use as a darkroom, and a photomultiplier tube (PMT) for detecting the emitted light.

[0102] In Tr.EL, the frequency and pulse width of the device are fixed to perform measurements under identical conditions, and a negative voltage is applied to exclude trapped charges present in the device in order to analyze the pure delayed fluorescence component. The signal for analysis is collected by a computing device (PC), and damping behavior is modeled and applied. When the measured delayed fluorescence component is fitted to 1 / sqrt, a linear decay phenomenon can be identified, and the delayed fluorescence proportion can be extracted from the corresponding fragment. In the case of OLED devices, when the applied pulse is turned off, residual trapped charges can remain in the device and can be emitted through recombination. Therefore, trapped charges are excluded from the EL signal, and the remainder is fitted to 1 / sqrt to ensure a linear decay time for a clearer fit.

[0103] In some embodiments, the first electrode 110 may have a work function of about -5.2 eV to about -4.8 eV.

[0104] In some embodiments, the light-emitting device 10 may further include a first cover layer located outside the first electrode 110 and / or a second cover layer located outside the second electrode 190, and

[0105] At least one of the first and second capping layers may contain a material having a refractive index of 1.6 or higher at a wavelength of 589 nm.

[0106] In devices in related fields, a hybrid film containing p-dopants and hole transport materials or a single film containing p-dopants (e.g., composed of p-dopants) can be used in the hole transport region to ensure reliability and driving stability.

[0107] When holes are injected using p-doped materials, the charge transfer (CT) complexation effect can be used for hole injection. The amount of hole injected must be adjusted to increase the amount (e.g., concentration) of excitons generated within the emitter layer, but due to the p-doped materials, controlling the hole injection characteristics using the CT complexation effect can be very difficult.

[0108] In related fields, when hole transport materials are used without p-dopers, an excessive amount (e.g., insufficient concentration) of holes can be injected, causing the device to become electron-rich and generate excess electrons that do not contribute to light emission. This can negatively affect the interior of the emitter layer and the hole injection layer. Therefore, it may reduce the long-term reliability and / or efficiency of the device.

[0109] To address this problem, a light-emitting device according to one or more embodiments of this disclosure may include a hole transfer layer in the hole transport region in contact with the electrode, wherein the hole transfer layer satisfies the conditions described herein, and thereby provides improved drive voltage, efficiency, and / or lifetime characteristics.

[0110] Typically, materials with hole transport properties can be introduced into the hole transport region.

[0111] In some embodiments, a hole transfer layer comprising an electron transport compound (e.g., composed of an electron transport compound) may be introduced into the space between the first electrode and the adjacent hole injection layer (or adjacent hole transport layer) in a light-emitting device according to one or more embodiments, thereby improving the control of the hole injection field of the device and improving the control of the hole injection characteristics of the device through tunneling phenomena.

[0112] Furthermore, in the light-emitting device according to one or more embodiments, the HOMO energy level of the hole transfer layer can be from about -6.0 eV to about -5.3 eV, and the HOMO energy level difference relative to the adjacent layer (e.g., the directly adjacent layer) (hole injection layer or hole transport layer) can be 0.15 eV or greater than 0.15 eV. Therefore, thermionic emission implantation and CT complex implantation can be restricted, and hole implantation via tunneling can be effectively performed, thereby controlling the hole implantation characteristics.

[0113] Furthermore, the light-emitting device according to one or more embodiments may include a single hole transfer layer comprising an electron transport compound (e.g., composed of an electron transport compound) in the emitting unit adjacent to the anode. Compared to the case where a hole transfer layer is included in the emitting unit not adjacent to the anode, tunneling between the inorganic layer (anode) and the organic layer (single hole transfer layer) can be effectively generated, and hole injection characteristics can therefore be controlled.

[0114] Furthermore, the anode of the light-emitting device according to one or more embodiments may comprise a material having a work function of about -5.2 eV to about -4.8 eV, thereby achieving a sufficient HOMO energy level difference compared to electron transport compounds in adjacent single hole transfer layers. Therefore, thermionic emission implantation and CT complex implantation can be restricted, and hole implantation via tunneling can be effectively performed, thereby improving control over hole implantation characteristics.

[0115] According to one or more embodiments, the electronic device may include a light-emitting device.

[0116] In some implementations, the color coordinates measured at the front view of the electronic device can be from about 0.09 to about 0.15.

[0117] In some implementations, when the front viewing angle of the electronic device is 0 degrees, the color coordinates measured at a side viewing angle at an angle of 30 to 45 degrees from the front viewing angle can be about 0.45 to about 0.06.

[0118] In some embodiments, the electronic device may further include: a packaging unit located on the light-emitting device; and

[0119] The functional layer on the packaging unit may include a touch screen layer, a polarization layer, a color filter, a color conversion layer, or any combination thereof.

[0120] In some implementations, the quantum dot or optical component containing the quantum dot may be located in at least one direction of travel of the light emitted from the light-emitting device.

[0121] As used herein, the term "intermediate layer" refers to one or more layers located between the first and second electrodes in a light-emitting device. The materials contained in the "intermediate layer" are not limited to organic materials.

[0122] In the following text, we will discuss... Figure 1 The structure of the light-emitting device 10 according to the embodiment and the method of manufacturing the light-emitting device 10 according to the embodiment are described.

[0123] First electrode 110

[0124] exist Figure 1 In this configuration, the substrate may additionally be located below the first electrode 110 and / or above the second electrode 190. The substrate may be a glass substrate and / or a plastic substrate. The substrate may be a flexible substrate comprising a plastic with excellent heat resistance and / or durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0125] The first electrode 110 can be formed by depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, a high work function material that can be easily injected with holes can be used as the material for the first electrode.

[0126] The first electrode 110 can be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 can be indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In some embodiments, when the first electrode 110 is a semi-transparent electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof can be used as the material for forming the first electrode 110.

[0127] The first electrode 110 may have a single-layer structure or a multi-layer structure comprising two or more layers. In some embodiments, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0128] Middle layer 150

[0129] Intermediate layer 150 may be on first electrode 110. Intermediate layer 150 may include emitter layer.

[0130] The intermediate layer 150 may further include a hole transport region between the first electrode 110 and the emitter layer and an electron transport region between the emitter layer and the second electrode 190.

[0131] In addition to various organic materials, the intermediate layer 150 may further contain metal-containing compounds (e.g., organometallic compounds), inorganic materials (e.g., quantum dots), etc.

[0132] As described above, the intermediate layer 150 may include: i) at least two emitting units stacked sequentially between the first electrode 110 and the second electrode 190; and ii) a charge generation layer located between the at least two emitting units. When the intermediate layer 150 includes at least two emitting units and a charge generation layer, the light-emitting device 10 may be a series light-emitting device.

[0133] Hole transport regions 151-1, 151-2, and 151-3 in intermediate layer 150

[0134] Hole transport region 151-1, hole transport region 151-2 and hole transport region 151-3 may each have: i) a single-layer structure containing a single material (e.g., composed of a single material), ii) a single-layer structure containing multiple different materials, or iii) a multi-layer structure having multiple layers containing multiple different materials.

[0135] In some embodiments, the first hole transport region 151-1 may have the layered structure described above (e.g., including a single hole transfer layer containing or composed of an electron transport compound).

[0136] Hole transport regions 151-2 and 151-3, in addition to the first hole transport region 151-1, may include hole injection layers 151-2a and 151-3a, hole transport layers 151-2b and 151-3b, emission assist layer, and / or electron blocking layer, respectively.

[0137] For example, the first hole transport region 151-1 may have a multi-layer structure, such as a hole transfer layer / hole injection layer / hole transport layer structure, a hole transfer layer / hole injection layer / hole transport layer / emission auxiliary layer structure, a hole transfer layer / hole injection layer / emission auxiliary layer structure, a hole transfer layer / hole transport layer / emission auxiliary layer structure, or a hole transfer layer / hole injection layer / hole transport layer / electron blocking layer structure, wherein the layers of each structure are stacked sequentially on the first electrode 110 in their respective prescribed order.

[0138] For example, hole transport region 151-2 and hole transport region 151-3 may each have a multi-layer structure, such as a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein the layers of each structure are stacked sequentially in their respective prescribed order.

[0139] Hole transport regions 151-1, 151-2, and 151-3 may each independently contain a compound represented by formula 201, a compound represented by formula 202, or any combination thereof:

[0140] Formula 201

[0141]

[0142] Formula 202

[0143]

[0144] Among them, in equations 201 and 202,

[0145] L 201 To L 204 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0146] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or by at least one R 10a Replacement C1-C 20 alkylene groups, unsubstituted or with at least one R 10a Replacement C2-C 20 alkenyl groups, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic group, or unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups,

[0147] xa1 to xa4 can each be an integer from 0 to 5 independently.

[0148] xa5 can be an integer from 1 to 10.

[0149] R 201 To R 204 and Q 201 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0150] R 201 and R 202 It can be optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups combine with each other to form unsubstituted or substituted groups with at least one R group. 10a Replacement C8-C 60 Polycyclic groups (e.g., carbazole groups, etc.) (e.g., compound HT16 described herein),

[0151] R 203 and R 204 It can be optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups combine with each other to form unsubstituted or substituted groups with at least one R group. 10a Replacement C8-C 60 Polycyclic groups, and

[0152] na1 can be an integer from 1 to 4.

[0153] In some embodiments, formulas 201 and 202 may each contain at least one group represented by formulas CY201 to CY217:

[0154]

[0155] In formulas CY201 to CY217, R 10b and R 10c They can be used independently with R 10a Same, CY 201 To CY 204 Each can be C3-C independently. 20 Carbocyclic groups or C1-C 20 Heterocyclic groups, and at least one hydrogen atom in formulas CY201 to CY217 may be unsubstituted or substituted with at least one R 10a replace.

[0156] In some implementations, in formulas CY201 to CY217, the ring CY 201 To CY 204 Each group can be an independent phenyl group, naphthol group, phenanthrene group, or anthracene group.

[0157] In one or more embodiments, Formula 201 and Formula 202 may each contain at least one group represented by Formula CY201 to Formula CY203.

[0158] In one or more embodiments, formula 201 may include at least one group represented by formula CY201 to CY203 and at least one group represented by formula CY204 to CY217.

[0159] In one or more embodiments, in formula 201, xa1 can be 1, R 201 It can be a group represented by any of the formulas CY201 to CY203, xa2 can be 0, and R 202 It can be a group represented by any of the formulas CY204 to CY207.

[0160] In one or more embodiments, Formula 201 and Formula 202 may each not contain (e.g., may exclude) groups represented by Formulas CY201 to CY203.

[0161] In one or more embodiments, Formula 201 and Formula 202 may each not contain a group represented by Formula CY201 to Formula CY203, but may contain at least one group represented by Formula CY204 to Formula CY217.

[0162] In one or more embodiments, formulas 201 and 202 may each not contain groups represented by formulas CY201 to CY217.

[0163] In some embodiments, hole transport regions 151-1, 151-2, and 151-3 may each comprise one or any combination of compounds HT1 to HT44, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), and polyaniline / poly(4-styrenesulfonate) (PANI / PSS):

[0164]

[0165]

[0166]

[0167]

[0168]

[0169] The thicknesses of hole transport regions 151-1, 151-2, and 151-3 can each be approximately 50 angstroms. to approximately And in some implementation schemes, approximately to approximately When hole transport region 151-1, hole transport region 151-2, and hole transport region 151-3 each include a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately to approximately And in some implementation schemes, approximately to approximately Furthermore, the thickness of the hole transport layer can be approximately to approximately And in some implementation schemes, approximately to approximately Excellent hole transport characteristics can be obtained without a significant increase in driving voltage when the thickness of the hole transport region, hole injection layer, and hole transport layer are all within these ranges.

[0170] The thickness of the hole transfer layer 151-1c can be approximately to approximately

[0171] The emission assist layer can increase the light emission efficiency of the device by compensating for the optical resonant distance of the wavelength of light emitted by the emission layer. The electron blocking layer can reduce or eliminate the flow of electrons from the electron transport region. Both the emission assist layer and the electron blocking layer can contain the aforementioned materials.

[0172] p-dopants

[0173] Hole transport regions 151-1, 151-2, and 151-3 may each contain a charge-generating material as well as the aforementioned material to improve the conductivity of the hole transport regions. The charge-generating material may be substantially uniformly or non-uniformly dispersed in the hole transport regions, and for example, may exist in a single layer containing the charge-generating material (e.g., composed of the charge-generating material).

[0174] Charge-generating materials may include, for example, p-dopers.

[0175] In some implementations, the lowest unoccupied molecular orbital (LUMO) level of the p-dopant can be -3.5 eV or less.

[0176] In some embodiments, the p-doper may include quinone derivatives, compounds containing cyano groups, compounds containing elements EL1 and EL2, or any combination thereof.

[0177] Non-limiting examples of quinone derivatives include TCNQ, F4-TCNQ, etc.

[0178] Non-limiting examples of compounds containing cyano groups include HAT-CN, compounds represented by formula 221, etc.

[0179]

[0180] Equation 221

[0181]

[0182] In Equation 221,

[0183] R 221 To R 223 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups, and

[0184] R 221 To R 223 At least one of them can be independently: a C1-C group substituted with a cyano group; -F; -Cl; -Br; -I; or a C1-C group substituted with a cyano group, -F, -Cl, -Br, -I, or any combination thereof. 20 Alkyl groups; or C3-C groups substituted with any combination thereof 60 Carbocyclic groups or C1-C 60 Heterocyclic groups.

[0185] In a compound containing elements EL1 and EL2, element EL1 can be a metal, a metalloid, or a combination thereof, and element EL2 can be a nonmetal, a metalloid, or a combination thereof.

[0186] Non-limiting examples of metals include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os) Cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.; later transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); etc.

[0187] Non-limiting examples of metalloids include silicon (Si), antimony (Sb), tellurium (Te), etc.

[0188] Non-limiting examples of nonmetals include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0189] For example, compounds containing elements EL1 and EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides, quasi-metal iodides, etc.), metal tellurides, or any combination thereof.

[0190] Non-limiting examples of metal oxides include tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxides (e.g., ReO3, etc.), etc.

[0191] Non-limiting examples of metal halides include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, etc.

[0192] Non-limiting examples of alkali metal halides include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0193] Non-limiting examples of alkaline earth metal halides include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0194] Non-limiting examples of transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, etc.). TaBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReB2). Rhodium halides (e.g., RhF2, ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, Ir...). Examples of halides include: Br2, IrI2, etc.; nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.); palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.); platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.); copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.); silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.); and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.).

[0195] Non-limiting examples of post-transition metal halides include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), etc.

[0196] Non-limiting examples of lanthanide metal halides include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, SmI3, etc.

[0197] Non-limiting examples of metal halide may include antimony halides (e.g., SbCl5, etc.).

[0198] Non-limiting examples of metal tellurides include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, etc.). FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0199] Emitter layers 152-1, 152-2, and 152-3 in intermediate layer 150

[0200] When the light-emitting device 10 is a full-color light-emitting device, the emitting layers 152-1, 152-2, and 152-3 can be patterned as red, green, and / or blue emitting layers, depending on the sub-pixels. In one or more embodiments, the emitting layers 152-1, 152-2, and 152-3 may each have a stacked structure. The stacked structure may include two or more layers selected from red, green, and blue emitting layers. In some embodiments, the two or more layers may be in direct contact with each other. In some embodiments, the two or more layers may be separated from each other. In one or more embodiments, the emitting layers may contain two or more materials. The two or more materials may include a material that emits red light, a material that emits green light, or a material that emits blue light. The two or more materials may be mixed with each other in a single layer. The two or more materials mixed with each other in a single layer may be designed to emit white light.

[0201] Emitter layers 152-1, 152-2, and 152-3 may each contain a host and a dopant. The dopant may be a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0202] Based on 100 parts by weight of the main body, the amount of dopant in each of the emission layers 152-1, 152-2 and 152-3 can be from about 0.01 parts by weight to about 15 parts by weight.

[0203] In some implementations, emitter layer 152-1, emitter layer 152-2 and emitter layer 152-3 may each contain quantum dots.

[0204] Emitting layers 152-1, 152-2, and 152-3 may each contain a delayed fluorescence material. The delayed fluorescence material may be used as a host or dopant in 152-1, 152-2, and 152-3.

[0205] The thickness of each of the emission layers 152-1, 152-2, and 152-3 can be approximately to approximately And in some implementation schemes, approximately to approximately When the thicknesses of the emitting layers 152-1, 152-2, and 152-3 are within any of these ranges, improved light emission characteristics can be obtained without a significant increase in driving voltage.

[0206] main body

[0207] The main body may include a compound represented by formula 301:

[0208] Formula 301

[0209] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 ,

[0210] In Equation 301,

[0211] Ar 301 and L 301 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0212] xb11 can be 1, 2, or 3.

[0213] xb1 can be an integer from 0 to 5.

[0214] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, unsubstituted or with at least one R 10a Replacement C1-C 60 alkyl groups, unsubstituted or with at least one R 10a Replacement C2-C 60 Alkenyl groups, unsubstituted or with at least one R 10a Replacement C2-C 60 The alkynyl group, unsubstituted or with at least one R 10a Replacement C1-C 60 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 301 (Q) 302 (Q) 303 -N(Q) 301 (Q) 302 -B(Q) 301 (Q) 302 -C(=O)(Q) 301 -S(=O)2(Q) 301 ) or -P(=O)(Q 301 (Q) 302 ),

[0215] xb21 can be an integer from 1 to 5, and

[0216] Q 301 To Q 303 Each can be the same as Q1 independently.

[0217] In some implementations, when xb11 in equation 301 is 2 or greater than 2, at least two Ar 301 They can be linked via a single bond.

[0218] In some embodiments, the body may include a compound represented by formula 301-1, a compound represented by formula 301-2, or any combination thereof:

[0219] Formula 301-1

[0220]

[0221] Formula 301-2

[0222]

[0223] Among them, in equations 301-1 and 301-2,

[0224] Ring A 301 To Ring A 304 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0225] X 301 It can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 (R) 305 ) or Si(R 304 (R) 305 ),

[0226] xb22 and xb23 can each be 0, 1, or 2 independently.

[0227] L 301 xb1 and R 301 Each can be associated with L separately. 301 xb1 and R 301 same,

[0228] L 302 To L 304 They can each independently interact with L 301 same,

[0229] xb2 to xb4 can each be independently identical to xb1, and

[0230] R 302 To R 305 and R 311 To R 314 They can be used independently with R 301 same.

[0231] In some embodiments, the host may include an alkaline earth metal complex. In some embodiments, the host may include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0232] In some embodiments, the main body may include one or any combination of compounds H1 to H124, 9,10-bis(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthyl-2-yl)anthracene (MADN), 9,10-bis-(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-bis(carbazolyl-9-yl)benzene (mCP), and 1,3,5-tris(carbazolyl-9-yl)benzene (TCP):

[0233]

[0234]

[0235]

[0236]

[0237]

[0238]

[0239] Phosphorescent dopants

[0240] Phosphorescent dopants may contain at least one transition metal as a metal center.

[0241] Phosphorescent dopants may include monodentate ligands, dipentate ligands, tridentate ligands, tetradentate ligands, pentadentate ligands, hexadentate ligands, or any combination thereof.

[0242] Phosphorescent dopants can be electrically neutral.

[0243] In some embodiments, the phosphorescent dopant may comprise an organometallic complex represented by formula 401:

[0244] Formula 401

[0245] M(L 401 ) xc1 (L 402 ) xc2

[0246] Formula 402

[0247]

[0248] In Equations 401 and 402,

[0249] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)).

[0250] L 401 The ligand can be represented by Equation 402, and xc1 can be 1, 2, or 3, and when xc1 is 2 or greater than 2, at least two L... 401 They can be the same or different from each other.

[0251] L 402 It can be an organic ligand, and xc2 can be an integer from 0 to 4, and when xc2 is 2 or greater than 2, at least two L... 402 They can be the same or different from each other.

[0252] X 401 and X 402 It can be either nitrogen or carbon, each independently.

[0253] Ring A 401 And Ring A 402 Each can be C3-C independently. 60 Carbocyclic groups or C1-C 60 Heterocyclic groups,

[0254] T 401 It can be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q) 411 )-*'、*-C(Q 411 (Q) 412 )-*'、*-C(Q 411 )=C(Q 412 )-*'、*-C(Q 411 ) = *' or * = C = *',

[0255] X 403 and X 404 These can be chemical bonds (e.g., covalent or coordinate bonds), O, S, N (Q) independently. 413 ), B(Q) 413), P(Q 413 ), C(Q 413 (Q) 414 ) or Si(Q 413 (Q) 414 ),

[0256] Q 411 To Q 414 Each can be independently identical to Q1.

[0257] R 401 and R 402 Each of these groups can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, unsubstituted, or substituted with at least one R. 10a Replacement C1-C 20 alkyl groups, unsubstituted or with at least one R 10a Replacement C1-C 20 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 401 (Q) 402 (Q) 403 -N(Q) 401 (Q) 402 -B(Q) 401 (Q) 402 -C(=O)(Q) 401 -S(=O)2(Q) 401 ) or -P(=O)(Q 401 (Q) 402 ),

[0258] Q 401 To Q 403 Each can be independently identical to Q1.

[0259] xc11 and xc12 can each be an integer from 0 to 10 independently, and

[0260] In Equation 402, * and *' each represent the binding site with M in Equation 401.

[0261] In one or more embodiments, in formula 402, i)X 401 It can be nitrogen, and X 402 It can be carbon, or ii)X 401 and X 402 They can all (for example, simultaneously) be nitrogen.

[0262] In one or more embodiments, when xc1 in equation 401 is 2 or greater than 2, at least two L 401 The two rings A in 401 It can be optionally via T as a linking group 402 Combined, or two rings A 402 It can be optionally via T as a linking group 403 Combined (see, for example, compounds PD1 through PD4 and PD7). T 402 and T 403 They can be independently associated with T 401 same.

[0263] L in Equation 401 402 It can be any suitable organic ligand. For example, L... 402 It can be a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a pyridine carboxylate group), a -C (=O), an isonitrile group, a -CN group, or a phosphorus group (e.g., a phosphine group or a phosphite group).

[0264] The phosphorescent dopant compound can be, for example, one of compounds PD1 to PD25 or any combination thereof:

[0265]

[0266] Fluorescent dopants

[0267] Fluorescent dopants may include compounds containing amine groups, compounds containing styrene groups, or any combination thereof.

[0268] In some embodiments, the fluorescent dopant may include a compound represented by formula 501:

[0269] Formula 501

[0270]

[0271] In Equation 501,

[0272] Ar 501 L 501 To L 503 R 501 and R 502 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0273] xd1 to xd3 can each be independently 0, 1, 2, or 3, and

[0274] xd4 can be 1, 2, 3, 4, 5, or 6.

[0275] In some implementations, in Formula 501, Ar 501 It may include fused cyclic groups in which at least three monocyclic groups are fused (e.g., anthracene groups, etc.). (group or pyrene group).

[0276] In some implementations, xd4 in Equation 501 can be 2.

[0277] In some embodiments, the fluorescent dopant may include one or any combination of compounds FD1 to FD36, DPVBi, DPAVBi:

[0278]

[0279]

[0280]

[0281] Delayed fluorescence materials

[0282] Emitting layers 152-1, 152-2, and 152-3 may each contain delayed fluorescence material.

[0283] The delayed fluorescence material described in this article can be any suitable compound that emits delayed fluorescence based on the delayed fluorescence emission mechanism.

[0284] Depending on the function of the other materials contained in emission layers 152-1, 152-2, and 152-3, the delayed fluorescence material contained in emission layers 152-1, 152-2, and 152-3 can be used as a host or dopant.

[0285] In some embodiments, the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescent material can be greater than about 0 eV and less than about 0.5 eV. When the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescent material is within this range, the upconversion from the triplet state to the singlet state in the delayed fluorescent material can be enhanced, thereby improving the luminous efficiency of the light-emitting device 10, etc.

[0286] In some embodiments, the delayed fluorescence material may include i) containing at least one electron donor (e.g., a π-electron-rich C3-C). 60Cyclic groups (e.g., carbazole groups) and at least one electron acceptor (e.g., sulfoxide groups, cyano groups, C1-C groups containing nitrogen lacking π electrons). 60 Materials containing cyclic groups, etc., ii) comprising C8-C alloys containing at least two cyclic groups that are fused together and share boron (B). 60 Materials with polycyclic groups, etc.

[0287] Non-limiting examples of delayed fluorescence materials include at least one of compounds DF1 to DF9:

[0288]

[0289] quantum dots

[0290] In some implementations, emitter layer 152-1, emitter layer 152-2 and emitter layer 152-3 may each contain quantum dots.

[0291] As used in this article, “quantum dot” refers to a crystal of any suitable semiconductor compound material that can emit emission wavelengths of different lengths depending on the size of the crystal.

[0292] The diameter of a quantum dot can be, for example, from about 1 nm to about 10 nm.

[0293] Quantum dots can be synthesized through wet chemical processes, organometallic chemical vapor deposition, molecular beam epitaxy, or any suitable process.

[0294] Wet chemical processes are methods for growing quantum dot crystals by mixing precursor materials with organic solvents. During crystal growth, the organic solvent naturally acts as a dispersant to the surface of the quantum dot crystals, thereby controlling the crystal growth. Therefore, wet chemical processes are often easier than vapor deposition processes (such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Furthermore, the growth of quantum dot particles can be controlled at a lower manufacturing cost.

[0295] Quantum dots may include group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV elements or compounds; or any combination thereof.

[0296] Non-limiting examples of group II-VI semiconductor compounds include binary compounds (e.g., CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS); ternary compounds (e.g., CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, Cd... ZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS); quaternary compounds (e.g., CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe); or any combination thereof.

[0297] Non-limiting examples of group III-V semiconductor compounds include binary compounds (e.g., GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb); ternary compounds (e.g., GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAIP, InNAs, InNSb, InPAs, and / or InPSb); quaternary compounds (e.g., GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb); or any combination thereof. In some embodiments, the group III-V semiconductor compound may further comprise a group II element. Non-limiting examples of group III-V semiconductor compounds that further contain group II elements include InZnP, InGaZnP, InAlZnP, etc.

[0298] Non-limiting examples of III-VI semiconductor compounds include binary compounds (e.g., GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.); ternary compounds (e.g., InGaS3, InGaSe3, etc.); or any combination thereof.

[0299] Non-limiting examples of group I-III-VI semiconductor compounds include ternary compounds (e.g., AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2 and / or any combination thereof).

[0300] Non-limiting examples of group IV-VI semiconductor compounds include binary compounds (e.g., SnS, SnSe, SnTe, PbS, PbSe and / or PbTe); ternary compounds (e.g., SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe); quaternary compounds (e.g., SnPbSSe, SnPbSeTe and / or SnPbSTe); or any combination thereof.

[0301] Group IV elements or compounds can be single elements (e.g., Si or Ge); binary compounds (e.g., SiC or SiGe); or any combination thereof.

[0302] Each element contained in a multi-element compound (e.g., binary, ternary, and quaternary compounds) may exist in its particles (e.g., quantum dots) at substantially uniform or non-uniform concentrations.

[0303] Quantum dots can have a single structure, in which the concentration of each element contained within the quantum dot is substantially uniform, or they can have a core-shell dual structure, in which the shell surrounds the core. In some embodiments, the material contained in the core can be different from the material contained in the shell.

[0304] The shell of a quantum dot can serve as a protective layer to prevent or reduce chemical degradation of the nucleus, thus maintaining semiconductor properties, and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the nucleus and the shell can have a concentration gradient, where the concentration of elements present in the shell decreases towards the nucleus.

[0305] Non-limiting examples of shell materials for quantum dots include metal oxides, quasi-metal oxides, non-metal oxides, semiconductor compounds, or combinations thereof. Non-limiting examples of metal oxides, quasi-metal oxides, or non-metal oxides include: binary compounds (e.g., SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and / or NiO); ternary compounds (e.g., MgAl2O4, CoFe2O4, NiFe2O4, and / or CoMn2O4); or any combination thereof. Non-limiting examples of semiconductor compounds include group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; or any combination thereof. In some embodiments, the semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0306] Quantum dots can have a full width at half maximum (FWHM) of emission wavelengths of approximately 45 nm or less, approximately 40 nm or less, or approximately 30 nm or less. When the FWHM of quantum dots is within this range, color purity or color reproducibility can be improved. Furthermore, because light emitted by quantum dots is emitted in all directions, optical viewing angles can be improved.

[0307] In some implementations, quantum dots can be spherical, pyramidal, multi-armed, and / or cubic nanoparticles, nanotubes, nanowires, nanofibers, and / or nanoplate particles.

[0308] By adjusting the size of the quantum dots, the band gap can also be adjusted, thereby generating light of various suitable wavelengths in the quantum dot emission layer. By using quantum dots of various sizes, light-emitting devices capable of emitting light of various wavelengths can be realized. In some embodiments, the size of the quantum dots can be selected so that they can be designed to emit red, green, and / or blue light. Furthermore, the size of the quantum dots can be selected so that they can be designed to emit white light by combining various colors of light.

[0309] Electron transport regions 153-1, 153-2, and 153-3 in intermediate layer 150

[0310] Electron transport regions 153-1, 153-2 and 153-3 may have: i) a single-layer structure containing a single material (e.g., composed of a single material), ii) a single-layer structure containing multiple different materials, or iii) a multi-layer structure having multiple layers containing multiple different materials.

[0311] Electron transport regions 153-1, 153-2, and 153-3 may each include a buffer layer, a hole blocking layer, an electron control layer, electron transport layers 153-1a, 153-2a, and 153-3a, an electron injection layer 153-1b, an electron injection layer 153-2b, and an electron injection layer 153-3b, or any combination thereof.

[0312] In some embodiments, electron transport regions 153-1, 153-2, and 153-3 may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, wherein the layers of each structure are stacked sequentially on the emitter layer in their respective prescribed order.

[0313] Electron transport regions (e.g., buffer layers, hole blocking layers, electron control layers, and / or electron transport layers within electron transport regions) may contain C1-C atoms with at least one π-electron-deficient nitrogen atom. 60 Metal-free compounds with cyclic groups.

[0314] In some embodiments, electron transport regions 153-1, 153-2, and 153-3 may each comprise a compound represented by formula 601:

[0315] Formula 601

[0316] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 ,

[0317] In Equation 601,

[0318] Ar 601 and L 601 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0319] xe11 can be 1, 2, or 3.

[0320] xe1 can be 0, 1, 2, 3, 4, or 5.

[0321] R 601 It can be unsubstituted or replaced by at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ), Q 601 To Q 603 Each can be independently identical to Q1.

[0322] xe21 can be 1, 2, 3, 4, or 5, and

[0323] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or by at least one R. 10a Substituted C1-C nitrogen containing π-electron-deficient atoms 60 Cyclic groups.

[0324] In some implementations, when xe11 in formula 601 is 2 or greater than 2, at least two Ar 601 They can be linked via a single bond.

[0325] In some implementations, in Formula 601, Ar 601 It can be a substituted or unsubstituted anthracene group.

[0326] In some embodiments, electron transport regions 153-1, 153-2, and 153-3 may each comprise a compound represented by formula 601-1:

[0327] Formula 601-1

[0328]

[0329] In Equation 601-1,

[0330] X 614 It can be N or C(R) 614 ), X 615It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and selected from X 614 To X 616 At least one of them can be N,

[0331] L 611 To L 613 They can each independently interact with L 601 same,

[0332] xe611 to xe613 can each be independently identical to xe1.

[0333] R 611 To R 613 They can be used independently with R 601 Same, and

[0334] R 614 To R 616 Each of these can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 20 Alkyl groups, C1-C 20 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups.

[0335] In some implementations, in Formula 601 and Formula 601-1, xe1 and xe611 to xe613 can each be 0, 1 or 2 independently.

[0336] The electron transport region may contain one or any combination of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, and NTAZ.

[0337]

[0338]

[0339]

[0340]

[0341] The thicknesses of electron transport regions 153-1, 153-2, and 153-3 can each be approximately [missing information]. to approximately And in some implementation schemes, approximately to approximately When electron transport region 153-1, electron transport region 153-2, and electron transport region 153-3 each include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, the hole blocking layer, and / or the electron control layer can each be independently approximately [missing information]. to approximately For example, about to approximately Furthermore, the thickness of the electron transport layer can be approximately to approximately For example, about to approximately When the thicknesses of the buffer layer, hole blocking layer, electronic control layer, electron transport layer, and / or electron transport region are each within these ranges, excellent electron transport characteristics can be obtained without a significant increase in driving voltage.

[0342] In addition to the materials described above, the electron transport region (e.g., the electron transport layer in the electron transport region) may further contain a metallic material.

[0343] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ions in alkali metal complexes may be lithium (Li) ions, sodium (Na) ions, potassium (K) ions, rubidium (Rb) ions, or cesium (Cs) ions. The metal ions in alkaline earth metal complexes may be beryllium (Be) ions, magnesium (Mg) ions, calcium (Ca) ions, strontium (Sr) ions, or barium (Ba) ions. Each ligand coordinated to the metal ions of the alkali metal complex and / or alkaline earth metal complex may independently be hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0344] For example, metal-containing materials may include Li complexes. Li complexes may include, for example, compounds ET-D1 (LiQ) or ET-D2:

[0345]

[0346] Electron transport regions 153-1, 153-2, and 153-3 may include an electron injection layer that facilitates the injection of electrons from the second electrode 190. The electron injection layer may be in direct contact with the second electrode 190.

[0347] The electron injection layer may have: i) a single-layer structure comprising a single material (e.g., consisting of a single material), ii) a single-layer structure comprising multiple different materials, or iii) a multi-layer structure having multiple layers comprising multiple different materials.

[0348] The electron injection layer may comprise an alkali metal, an alkaline earth metal, a rare earth metal, a compound containing an alkali metal, a compound containing an alkaline earth metal, a compound containing a rare earth metal, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0349] The alkali metal may be Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may be Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may be Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0350] The compound containing an alkali metal, the compound containing an alkaline earth metal, and the compound containing a rare earth metal may be an oxide, a halide (e.g., fluoride, chloride, bromide, or iodide), a telluride, or any combination thereof of each of the alkali metal, the alkaline earth metal, and the rare earth metal, respectively.

[0351] The compound containing an alkali metal may be an alkali metal oxide (e.g., Li2O, Cs2O, and / or K2O), an alkali metal halide (e.g., LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI), or any combination thereof. The compound containing an alkaline earth metal may include an alkaline earth metal oxide (e.g., BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) and / or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1)). The compound containing a rare earth metal may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In some embodiments, the compound containing a rare earth metal may include lanthanide metal tellurides. Non-limiting examples of lanthanide metal tellurides include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, etc.

[0352] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may each comprise: i) ions of alkali metals, alkaline earth metals, or rare earth metals as described above, and ii) ligands bound to the metal ions, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenidine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0353] The electron injection layer may comprise (e.g., consist of): alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof as described above. In some embodiments, the electron injection layer may further comprise organic materials (e.g., compounds represented by Formula 601).

[0354] In some embodiments, the electron-injected layer may comprise (e.g., consist of): i) an alkali metal-containing compound (e.g., an alkali metal halide), or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide); and b) an alkali metal, alkaline earth metal, rare earth metal, or any combination thereof. In some embodiments, the electron-injected layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, etc.

[0355] When the electron injection layer further contains organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof can be uniformly or non-uniformly dispersed in the matrix containing organic materials.

[0356] The thickness of the electron injection layer can be approximately to approximately And in some implementation schemes, approximately to approximately Excellent electron injection characteristics can be obtained when the thickness of the electron injection layer is within any of these ranges, without a significant increase in driving voltage.

[0357] Second electrode 190

[0358] The second electrode 190 may be located on the intermediate layer 150. In one embodiment, the second electrode 190 may serve as a cathode, acting as an electron injection electrode. In this embodiment, the material used to form the second electrode 190 may be a material with a low work function, such as a metal, alloy, conductive compound, or any combination thereof.

[0359] The second electrode 190 may contain lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 190 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.

[0360] The second electrode 190 may have a single-layer structure or a multi-layer structure including two or more layers.

[0361] Cover layer

[0362] The first cover layer may be located outside the first electrode 110, and / or the second cover layer may be located outside the second electrode 190. In some embodiments, the light-emitting device 10 may have a structure in which the first cover layer, the first electrode 110, the intermediate layer 150, and the second electrode 190 are stacked in this prescribed order, or a structure in which the first cover layer, the first electrode 110, the intermediate layer 150, the second electrode 190, and the second cover layer are stacked in this prescribed order.

[0363] In some embodiments, in the light-emitting device 10, light emitted from the emitting layer in the intermediate layer 150 can be transmitted through the first electrode 110 (which may be a semi-transparent electrode or a transmissive electrode) and through the first cover layer to the outside. In some embodiments, in the light-emitting device 10, light emitted from the emitting layer in the intermediate layer 150 can be transmitted through the second electrode 190 (which may be a semi-transparent electrode or a transmissive electrode) and through the second cover layer to the outside.

[0364] The first and second capping layers can improve the external luminous efficiency of the device based on the principle of constructive interference. Therefore, the optical extraction efficiency of the light-emitting device 10 can be increased, thereby improving the luminous efficiency of the light-emitting device 10.

[0365] The first and second capping layers may each contain a material having a refractive index of 1.6 or greater (at 589 nm).

[0366] The first and second covering layers can each be independently an organic covering layer containing organic materials, an inorganic covering layer containing inorganic materials, or a composite covering layer containing both organic and inorganic materials.

[0367] At least one of the first and second capping layers may independently comprise a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthylphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amine-containing compound may optionally be substituted with substituents of O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In some embodiments, at least one of the first and second capping layers may independently comprise an amine-containing compound.

[0368] In some embodiments, at least one of the first and second capping layers may each independently contain a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0369] In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently comprise one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0370]

[0371] electronic devices

[0372] The light-emitting device can be included in various electronic devices. In some embodiments, the electronic device including the light-emitting device can be a transmitting device or a verification device.

[0373] In addition to the light-emitting device, the electronic device (e.g., the emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or color conversion layer may be disposed in at least one direction of travel of the light emitted from the light-emitting device (along at least one direction of travel of the light emitted from the light-emitting device). For example, the light emitted from the light-emitting device may be blue light or white light. The light-emitting device can be understood by referring to the description provided herein. In some embodiments, the color conversion layer may comprise quantum dots. The quantum dots may be, for example, the quantum dots described herein.

[0374] An electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, a color filter may include a plurality of color filter regions corresponding to the plurality of sub-pixel regions, and a color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixel regions.

[0375] A pixel-defining film can be located between multiple sub-pixel regions to define each sub-pixel region.

[0376] The color filter may further include multiple color filter regions and light-blocking patterns between the multiple color filter regions, and the color conversion layer may further include multiple color conversion regions and light-blocking patterns between the multiple color conversion regions.

[0377] Multiple color filter regions (or multiple color conversion regions) may include: a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. In some embodiments, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In some embodiments, each of the multiple color filter regions (or multiple color conversion regions) may contain a quantum dot. In some embodiments, the first region may contain a red quantum dot, the second region may contain a green quantum dot, and the third region may not contain a quantum dot. Quantum dots can be understood by referring to the description of quantum dots provided herein. The first region, the second region, and / or the third region may each further contain an emitter.

[0378] In some embodiments, the light-emitting device may be designed to emit a first light, a first region may be designed to absorb the first light to emit 1-1 color light, a second region may be designed to absorb the first light to emit 2-1 color light, and a third region may be designed to absorb the first light to emit 3-1 color light. In this embodiment, the 1-1 color light, the 2-1 color light, and the 3-1 color light may each have a different maximum emission wavelength. In some embodiments, the first light may be blue light, the 1-1 color light may be red light, the 2-1 color light may be green light, and the 3-1 color light may be blue light.

[0379] In addition to the light-emitting device, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein one of the source electrode and the drain electrode may be electrically connected to one of the first and second electrodes of the light-emitting device.

[0380] In some implementations, the Y color coordinate measured at the front view of the electronic device can be from about 0.09 to about 0.15.

[0381] In some implementations, when the front viewing angle of the electronic device is 0 degrees, the Y color coordinate measured at a side viewing angle of 30 to 45 degrees relative to the front viewing angle can be about 0.45 to about 0.06.

[0382] Thin-film transistors may further include gate electrodes, gate insulating films, etc.

[0383] The active layer may contain crystalline silicon, amorphous silicon, organic semiconductors and / or oxide semiconductors.

[0384] The electronic device may further include an encapsulation unit for sealing the light-emitting device. The encapsulation unit may be located between the color filter and / or color conversion layer and the light-emitting device. The encapsulation unit may allow light to pass from the light-emitting device to the outside while preventing or reducing the penetration of air and moisture into the light-emitting device. The encapsulation unit may be a sealing substrate comprising a transparent glass and / or a plastic substrate. The encapsulation unit may be a thin-film encapsulation layer comprising at least one of organic and inorganic layers. When the encapsulation unit is a thin-film encapsulation layer, the electronic device may be flexible.

[0385] In addition to color filters and / or color conversion layers, various functional layers may be incorporated into the package unit, depending on the intended use of the electronic device. Non-limiting examples of functional layers include touchscreen layers, polarization layers, etc. The touchscreen layer may be a resistive touchscreen layer, a capacitive touchscreen layer, or an infrared beam touchscreen layer. The verification device may be, for example, a biometric verification device that identifies an individual based on biometric information (e.g., fingertip, pupil, etc.).

[0386] In addition to the light-emitting device described above, the verification device may further include a biometric information collection unit.

[0387] Electronic devices can be applied to various displays, light sources, lighting equipment, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram recorders, ultrasound diagnostic devices, endoscopic display devices), fish finders, various measuring devices, instruments (e.g., instruments for vehicles, airplanes, and ships), projectors, etc.

[0388] Figure 2 and Figure 3 Description

[0389] Figure 2 It is a schematic cross-sectional view of the light-emitting device according to the implementation plan.

[0390] Figure 2 The emitting device may include a substrate 100, a thin-film transistor, a light-emitting device, and a packaging unit 300 that seals the light-emitting device.

[0391] The substrate 100 may be a flexible substrate, a glass substrate, and / or a metal substrate. A buffer layer 210 may be on the substrate 100. The buffer layer 210 may prevent or reduce the penetration of impurities through the substrate 100 and provide a flat surface on the substrate 100.

[0392] The thin-film transistor can be on the buffer layer 210. The thin-film transistor may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0393] The active layer 220 may contain inorganic semiconductors (such as silicon or polysilicon), organic semiconductors or oxide semiconductors, and may include source regions, drain regions and channel regions.

[0394] The gate insulating film 230 used to insulate the active layer 220 and the gate electrode 240 can be on the active layer 220, and the gate electrode 240 can be on the gate insulating film 230.

[0395] An intermediate insulating film 250 may be on the gate electrode 240. The intermediate insulating film 250 may be between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to provide insulation therebetween.

[0396] The source electrode 260 and the drain electrode 270 may be on the intermediate insulating film 250. The intermediate insulating film 250 and the gate insulating film 230 may be formed to expose the source region and the drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may be adjacent to the exposed source region and the exposed drain region of the active layer 220.

[0397] The thin-film transistor can be electrically connected to a light-emitting device to drive the light-emitting device, and can be protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. The light-emitting device may be on the passivation layer 280. The light-emitting device may include a first electrode 110, an intermediate layer 150, and a second electrode 190.

[0398] The first electrode 110 may be on the passivation layer 280. The passivation layer 280 may not completely cover the drain electrode 270 and may expose a specific area of ​​the drain electrode 270, and the first electrode 110 may be configured to connect to the exposed drain electrode 270.

[0399] A pixel defining film 290 may be present on the first electrode 110. The pixel defining film 290 may expose a specific area of ​​the first electrode 110, and an intermediate layer 150 may be formed in the exposed area. The pixel defining film 290 may be a polyimide or polyacrylamide organic film. In some embodiments, some higher layers of the intermediate layer 150 may extend to the upper portion of the pixel defining film 290 and may be provided as common layers.

[0400] The second electrode 190 may be on the intermediate layer 150, and a capping layer 170 may be additionally formed on the second electrode 190. The capping layer 170 may be formed to cover the second electrode 190.

[0401] The encapsulation unit 300 may be on the cover layer 170. The encapsulation unit 300 may be on the light-emitting device to protect the light-emitting device from moisture and / or oxygen. The encapsulation unit 300 may include: an inorganic film comprising silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film comprising polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resin (e.g., aliphatic glycidyl ether (AGE), etc.) or any combination thereof; or a combination of inorganic and organic films.

[0402] Figure 3 This is a schematic cross-sectional view of another light-emitting device according to the implementation scheme.

[0403] Figure 3 The light-emitting device shown can be used with Figure 2 The light-emitting devices shown are essentially the same, but the light-shielding pattern 500 and functional region 400 are additionally located on the packaging unit 300. The functional region 400 can be i) a color filter region, ii) a color conversion region, or iii) a combination of a color filter region and a color conversion region. In some embodiments, it is included in the light-emitting device... Figure 3 The light-emitting device shown can be a series light-emitting device.

[0404] Manufacturing method

[0405] The layers constituting the hole transport region, the emitter layer, and the electron transport region can each be formed in a set or predetermined region using one or more suitable methods (e.g., vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and / or laser-induced thermal imaging).

[0406] When layers constituting the hole transport region, the emitter layer, and the electron transport region are formed by vacuum deposition, the deposition temperature can be from about 100°C to about 500°C, depending on the material to be included in each layer and the structure of each layer to be formed, and the deposition time can be from about 10°C to about 500°C. -8 To about 10 -3 The vacuum level of Torr and the speed of approximately 0.01 angstroms per second. to approximately Vacuum deposition was performed at a deposition rate of [missing information].

[0407] General definition of terminology

[0408] As used in this article, the term "C3-C" 60A "carbocyclic group" refers to a cyclic group consisting solely of carbon atoms and having 3 to 60 carbon atoms (e.g., 3 to 30, 3 to 24, or 3 to 18 carbon atoms). As used herein, the term "C1-C..." 60 A "heterocyclic group" is a cyclic group having 1 to 60 carbon atoms (e.g., 1 to 30, 1 to 24, or 1 to 18 carbon atoms) in addition to heteroatoms (e.g., 1 to 5 or 1 to 3 heteroatoms) other than carbon atoms. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups, each consisting of a single ring, or polycyclic groups in which at least two rings are fused together. For example, C1-C 60 The number of cyclic atoms in a heterocyclic group can be from 3 to 61.

[0409] As used herein, the term "cyclic group" can include C3-C 60 Carbocyclic groups and C1-C 60 Heterocyclic groups.

[0410] The term "π-electron-rich C3-C" 60 A "cyclic group" refers to a cyclic group having 3 to 60 carbon atoms (e.g., 3 to 30, 3 to 24, or 3 to 18 carbon atoms) and not containing *-N=*' as a cyclic moiety. As used herein, "C1-C containing π-electron-deficient nitrogen" is also an example. 60 "Cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms (e.g., 1 to 30, 1 to 24 or 1 to 18 carbon atoms) and *-N=*' as the cyclic part.

[0411] In some implementation schemes,

[0412] C3-C 60 The carbocyclic group can be i) a T1 group (as defined below) or ii) a group wherein at least two T1 groups are fused together (e.g., cyclopentadienyl group, adamantyl group, norbornel group, phenyl group, pentanene group, naphthyl group, chamomile ring group, indane group, acenaphthene group, phenanthrene group, phenanthrene group, anthracene group, fluoranthene group, benzo[a]phenanthrene group, pyrene group, etc.). Groups, perylene groups, pentaphenyl groups, heptadiene groups, tetraphenyl groups, styrene groups, hexaphenyl groups, pentaphenyl groups, rutin groups, argentinium groups, ovoid groups, indene groups, fluorene groups, spiro-difluorene groups, benzo[a]fluorene groups, ind[a]phenanthrene groups, or ind[a]anthracene groups),

[0413] C1-C 60The heterocyclic group can be i) a T2 group (as defined below), ii) a group wherein at least two T2 groups are fused together, or iii) a group wherein at least one T2 group is fused with at least one T1 group (e.g., pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzothiophene group, benzofuran group, carbazole group, dibenzothiophene group, dibenzothiophene group, dibenzofuran group, indolecarbazole group, indolecarbazole group, benzofuran-carbazole group, benzothiophenecarbazole group, benzothiophenecarbazole group, benzoindolecarbazole group, benzocarbazole group, benzonaphthiophene group, benzonaphthiophene group, benzofuran-dibenzofuran group, benzofuran-dibenzothiophene group). Groups, benzothiophene, dibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benziisoxazole group, benzothiazole group, benziisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzo[…] Quinoline group, benzoisoquinoline group, quinoxaloline group, benzoquinoxaloline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamoline group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0414] C3-C rich in π electrons 60 The cyclic group can be i) a T1 group, ii) a fused group wherein at least two T1 groups are fused, iii) a T3 group (as defined below), iv) a fused group wherein at least two T3 groups are fused, or v) a fused group wherein at least one T3 group is fused with at least one T1 group (e.g., C3-C). 60 Carbocyclic groups, pyrrole groups, thiophene groups, furan groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiophene groups, benzofuran groups, carbazole groups, dibenzothiophene groups, dibenzofuran groups, indole-carbazole groups, indole-carbazole groups, benzofuran-carbazole groups, benzothiophene-carbazole groups, benzothiophene-carbazole groups, benzoindole-carbazole groups, benzocarbazole groups, benzonaphthofuran groups, benzonaphthothiophene groups, benzonaphthothiophene groups, benzofuran-dibenzofuran groups, benzofuran-dibenzothiophene groups, benzothiophene-dibenzothiophene groups, etc.), and

[0415] C1-C containing nitrogen lacking π electrons 60 The cyclic group can be i) a T4 group (as defined below), ii) a group fused with at least two T4 groups, iii) a group fused with at least one T4 group and at least one T1 group, iv) a group fused with at least one T4 group and at least one T3 group, or v) a group fused with at least one T4 group, at least one T1 group, and at least one T3 group (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzo[a]pyrazole group, benzimidazole group, benzo[a]oxazole group, benzo[a]pyrazole group, benzo[a]imidazolium ... Isoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamyl group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0416] Wherein the T1 group can be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, adamantane group, norbornane (or bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a phenyl group.

[0417] The T2 group can be a furan group, thiophene group, 1H-pyrrole group, thiorrole group, borocyclopentadienyl group, 2H-pyrrole group, 3H-pyrrole group, imidazole group, pyrazole group, triazole group, tetraazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, azathirrole group, azaboracyclopentadienyl group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, or tetraazine group.

[0418] The T3 group can be a furan group, a thiophene group, a 1H-pyrrole group, a thiophene group, or a borocyclopentadiene group, and

[0419] The T4 group can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiazole group, an azaboranecyclopentadiene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetraazine group.

[0420] Based on the structure of the formula in the application terminology, such as the terms "cyclic group" and "C3-C" used in this article. 60 "Carbon ring group", "C1-C" 60 Heterocyclic groups, π-electron-rich C3-C 60 "Cyclic group" or "C1-C containing nitrogen lacking π electrons" 60 "Cyclic group" can be a group fused with any suitable cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.). For example, "phenyl group" can be a benzo[a] group, a phenyl group, a phenylene group, etc., and this can be understood by those skilled in the art based on the structure of a formula including "phenyl group".

[0421] Unit price C3-C 60 Carbocyclic groups and monovalent C1-C 60 Non-limiting examples of heterocyclic groups include C3-C 10 Cycloalkyl groups, C1-C 10 Heterocyclic alkyl groups, C3-C 10 cycloalkenyl groups, C1-C 10 Heterocyclic alkenyl groups, C6-C 60 aryl group, C1-C 60 Heteroaryl groups, monovalent non-aromatic fused polycyclic groups, and monovalent non-aromatic fused heterocyclic groups. Divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Non-limiting examples of heterocyclic groups include C3-C 10 Cycloalkyl groups, C1-C 10 heterocyclic alkyl groups, C3-C 10 Cycloalkylene groups, C1-C 10 heterocyclic alkenyl groups, C6-C 60 arylene groups, C1-C 60 Hypoaryl groups, divalent non-aromatic fused polycyclic groups, and substituted or unsubstituted divalent non-aromatic fused heterocyclic groups.

[0422] As used in this article, the term "C1-C" 60"alkyl group" refers to a straight-chain or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms (e.g., 1 to 30, 1 to 20, or 1 to 10 carbon atoms), and non-limiting examples include methyl groups, ethyl groups, n-propyl groups, isopropyl groups, n-butyl groups, sec-butyl groups, isobutyl groups, tert-butyl groups, n-pentyl groups, tert-pentyl groups, neopentyl groups, isopentyl groups, sec-pentyl groups, 3-pentyl groups, sec-isopentyl groups, n-hexyl groups, isohexyl groups, sec-hexyl groups, tert-hexyl groups, n-heptyl groups, isohexyl groups, sec-heptyl groups, tert-heptyl groups, n-octyl groups, isooctyl groups, sec-octyl groups, tert-octyl groups, n-nonyl groups, isononyl groups, sec-nonyl groups, tert-nonyl groups, n-decyl groups, isodel groups, sec-decyl groups, and tert-decyl groups. The term "C1-C" as used herein... 60 "alkylene group" refers to a group that has a C1-C2 bond structure. 60 Alkyl groups are divalent groups with essentially the same structure.

[0423] As used in this article, the term "C2-C" 60 "Alkenyl group" refers to the group located at C2-C. 60 A hydrocarbon group having at least one carbon-carbon double bond at the middle or end of an alkyl group (e.g., 2 to 30, 2 to 20, or 2 to 10 carbon atoms). Non-limiting examples include vinyl groups, propenyl groups, and butenyl groups. As used herein, the term "C2-C" is used... 60 "Ideinyl group" refers to a group that has a C2-C... 60 Alkenyl groups are divalent groups with essentially the same structure.

[0424] As used in this article, the term "C2-C" 60 "Alkyne group" refers to the group located at C2-C. 60 An alkyl group having at least one carbon-carbon triple bond at its middle or end, and is a monovalent hydrocarbon group (e.g., 2 to 30, 2 to 20, or 2 to 10 carbon atoms). Non-limiting examples include ethynyl and propynyl groups. As used herein, the term "C2-C" is used... 60 "Imyynyl group" refers to a group that has a C2-C... 60 Alkyne groups are divalent groups with essentially the same structure.

[0425] As used in this article, the term "C1-C" 60 "Alkoxy group" refers to the group consisting of -OA 101 (where A) 101 It is C1-C 60 Alkyl groups are monovalent groups. Non-limiting examples include methoxy groups, ethoxy groups, and isopropoxy groups.

[0426] As used in this article, the term "C3-C"10 "Cycloalkyl group" refers to a monocyclic cyclic group of a monovalent saturated hydrocarbon containing 3 to 10 carbon atoms. For example, the C3-C group used in this article... 10 Non-limiting examples of cycloalkyl groups include cyclopropyl groups, cyclobutyl groups, cyclopentyl groups, cyclohexyl groups, cycloheptyl groups, cyclooctyl groups, adamantyl groups, norbornelalkyl (bicyclo[2.2.1]heptyl) groups, bicyclo[1.1.1]pentyl groups, bicyclo[2.1.1]hexyl groups, or bicyclo[2.2.2]octyl groups. As used herein, the term "C3-C" is also relevant. 10 "Cycloalkylene group" refers to a group that has a C3-C6 bond structure. 10 Cycloalkyl groups are divalent groups with essentially the same structure.

[0427] As used in this article, the term "C1-C" 10 "Heterocyclic alkyl group" refers to a monovalent cyclic group containing at least one heteroatom other than a carbon atom (e.g., 1 to 5 or 1 to 3 heteroatoms) as a cyclic atom and having 1 to 10 carbon atoms. Non-limiting examples include 1,2,3,4-oxatriazole alkyl groups, tetrahydrofuranyl groups, and tetrahydrothiophenyl groups. The term "C1-C" is used herein. 10 "Heterocyclic alkyl groups" refers to groups with C1-C2 groups. 10 Heterocyclic alkyl groups are divalent groups with essentially the same structure.

[0428] As used in this article, the term "C3-C" 10 A "cycloalkenyl group" refers to a non-aromatic monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring. Non-limiting examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl groups. As used herein, the term "C3-C..." 10 "Iridyl group" refers to a group that has a C3-C6 bond structure. 10 Cycloalkenyl groups are divalent groups with essentially the same structure.

[0429] As used in this article, the term "C1-C" 10 A "heterocyclic alkenyl group" refers to a monovalent cyclic group whose ring contains at least one heteroatom (e.g., 1 to 5 or 1 to 3 heteroatoms other than carbon atoms), 1 to 10 carbon atoms, and at least one double bond. (C1-C) 10 Non-limiting examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl groups. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl group" refers to a group that has a C1-C2 bond structure. 10 Heterocyclic alkenyl groups are divalent groups with essentially the same structure.

[0430] As used in this article, the term "C6-C" 60 An "aryl group" refers to a monovalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms (e.g., 6 to 30, 6 to 24, or 6 to 18 carbon atoms). As used herein, the term "C6-C" is also relevant. 60 An "arylene group" refers to a divalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms (e.g., 6 to 30, 6 to 24, or 6 to 18 carbon atoms). (C6-C) 60 Non-limiting examples of aryl groups include phenyl groups, pentanenyl groups, naphthyl groups, chamomile cycloyl groups, indoleyl groups, acenaphthenic groups, phenanthyl groups, anthraceneyl groups, fluoranthraceneyl groups, benzo[a]phenanthreneyl groups, and pyrene groups. Peryl group, peryl group, pentaphenyl group, heptalenyl group, tetraphenyl group, fusyl group, hexaphenyl group, pentaphenyl group, rutinyl group, keratyl group, and ovoidyl group. When C6-C 60 aryl groups and C6-C 60 When each aryl group independently comprises two or more rings, the individual rings can be joined together.

[0431] As used in this article, the term "C1-C" 60 "Heteroaryl group" refers to a monovalent group in a heterocyclic aromatic system having at least one heteroatom (e.g., 1 to 5 or 1 to 3 heteroatoms) other than a carbon atom as a cyclic atom and 1 to 60 carbon atoms (e.g., 1 to 30, 1 to 24 or 1 to 18 carbon atoms). The term "C1-C" is used herein. 60 A "hybrid aryl group" refers to a divalent group in a heterocyclic aromatic system that further comprises at least one heteroatom (e.g., 1 to 5 or 1 to 3 heteroatoms) other than carbon atoms as cyclic atoms and 1 to 60 carbon atoms (e.g., 1 to 30, 1 to 24 or 1 to 18 carbon atoms). C1-C 60 Non-limiting examples of heteroaryl groups include pyridinyl groups, pyrimidinyl groups, pyrazinyl groups, pyridazinyl groups, triazinyl groups, quinolinyl groups, benzo[a]quinolinyl groups, isoquinolinyl groups, benzo[a]isoquinolinyl groups, quinoxalinyl groups, benzo[a]quinoxalinyl groups, quinazolinyl groups, benzo[a]quinazolinyl groups, cyclophosphinyl groups, phenanthrolinel groups, phthalazinyl groups, and naphthidyl groups. When C1-C 60 heteroaryl groups and C1-C 60 When each heteroaryl group independently comprises two or more rings, the individual rings can be joined together.

[0432] As used herein, the term "monovalent nonaromatic fused polycyclic group" refers to a monovalent group having two or more fused rings and having only carbon atoms as cyclic atoms (e.g., 8 to 60 carbon atoms, such as 8 to 30, 8 to 24, or 8 to 18 carbon atoms), wherein the entire molecular structure is nonaromatic (e.g., it is not aromatic when considered as a whole). Non-limiting examples of monovalent nonaromatic fused polycyclic groups include indenyl groups, fluorenyl groups, spiro-difluorenyl groups, benzo[a]fluorenyl groups, indo[a]phenanthrene groups, and indo[a]anthrayl groups. As used herein, the term "divalent nonaromatic fused polycyclic group" refers to a divalent group having a structure substantially the same as that of a monovalent nonaromatic fused polycyclic group.

[0433] As used herein, the term "monovalent nonaromatic fused heterocyclic group" refers to a monovalent group having two or more fused rings and having at least one heteroatom (e.g., one to five or one to three heteroatoms) as a cyclic atom in addition to carbon atoms (e.g., one to 60 carbon atoms, such as one to 30, one to 24 or one to 18 carbon atoms), wherein the entire molecular structure is nonaromatic (e.g., it is not aromatic when considered as a whole). Examples of monovalent non-aromatic fused heterocyclic groups include pyrrolyl groups, thiophenyl groups, furanyl groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiolyl groups, benzothiphenyl groups, benzofuranyl groups, carbazole groups, dibenzothiolyl groups, dibenzothiphenyl groups, dibenzofuranyl groups, azacarbazole groups, azafluorenyl groups, azadibenzothiolyl groups, azadibenzothiphenyl groups, azadibenzofuranyl groups, pyrazolyl groups, imidazole groups, triazoleyl groups, tetraazoleyl groups, oxazolyl groups, isoxazolyl groups, thiolyl groups, isothiazolyl groups, and oxadiazoleyl groups. Thiadiazolyl group, benzopyrazolyl group, benzoimidazolyl group, benzooxazolyl group, benzothiazolyl group, benzooxadiazolyl group, benzothiadiazolyl group, imidazopyridyl group, imidazopyrimidine group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indolecarbazoyl group, indolocarbazoyl group, benzofuranocarbazoyl group, benzothiophenocarbazoyl group, benzothiophenocarbazoyl group, benzoindolocarbazoyl group, benzocarbazoyl group, benzonaphthiophenyl group, benzonaphthiophenyl group, benzofuranodibenzofuranyl group, benzofuranodibenzothiophenyl group and benzothiophenodibenzothiophenyl group. As used in this article, the term "divalent nonaromatic fused heterocyclic group" refers to a divalent group having a structure substantially the same as that of a monovalent nonaromatic fused heterocyclic group.

[0434] As used in this article, the term "C6-C" 60 The aryloxy group is composed of -OA 102 (where A) 102 It is C6-C 60 (Aromatic group) is used as a designation. For example, the term "C6-C" is used herein. 60 "Aryl thioyl group" is composed of -SA 103 (where A) 103 It is C6-C 60 (Aromatic group) is used to indicate this.

[0435] As used in this article, the term "R" 10a "Could be:

[0436] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl group, cyano group or nitro group;

[0437] Each of the following groups is unsubstituted or replaced: -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group, C6-C 60 aryl thioyl groups, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 C1-C substituted by (or any combination thereof) 60 Alkyl groups, C2-C 60 alkenyl groups, C2-C 60 alkynyl group or C1-C 60 alkoxy group;

[0438] Each of the following groups is unsubstituted or replaced: -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl groups, C2-C 60 alkenyl groups, C2-C 60 alkynyl group, C1-C 60 alkoxy group, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group, C6-C 60aryl thioyl groups, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C substituted by any combination thereof 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group or C6-C 60 aryl thioyl group; or

[0439] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0440] Q1 to Q3, Q 11 To Q 13 Q 21 To Q 23 And Q 31 To Q 33 Each of these can be independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy groups; or each unsubstituted or deuterated, -F, cyano groups, C1-C 60 Alkyl groups, C1-C 60 C3-C substituted with alkoxy groups, phenyl groups, biphenyl groups, or any combination thereof 60 Carbocyclic groups or C1-C 60 Heterocyclic groups.

[0441] As used herein, the term "heteroatom" refers to any atom other than a carbon atom. Non-limiting examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0442] In this article, "Ph" represents a phenyl group, "Me" represents a methyl group, "Et" represents an ethyl group, and "tert-Bu" or "Bu" are used interchangeably. t " " indicates a tert-butyl group, and "OMe" is used in this article to indicate a methoxy group.

[0443] As used herein, the term "biphenyl group" refers to a phenyl group substituted with at least one phenyl group. A "biphenyl group" can be considered to have a "C6-C" substituted phenyl group. 60 "Aromatic group" is "substituted phenyl group" as a substituent.

[0444] As used herein, the term "triphenyl group" refers to a phenyl group substituted with at least one biphenyl group. A "triphenyl group" can be considered as having a substituted C6-C... 60 C6-C substituted with aryl group 60 "Aromatic group" is "substituted phenyl group" as a substituent.

[0445] Unless otherwise defined, the symbols * and *' used in this paper refer to the binding sites with adjacent atoms in the corresponding formulas.

[0446] The light-emitting device according to one or more embodiments will be described in more detail below with reference to the embodiments.

[0447] Example

[0448] Example 1

[0449] As both the substrate and anode, ITO with a strength of 15 ohms per square centimeter (Ω / cm) formed thereon will be used. 2 The first glass substrate (on which an ITO Corning substrate is formed) ), and a second glass substrate having Ag formed thereon and 15Ω / cm of ITO formed thereon 2 The third glass substrate (on which a Corning substrate with ITO is formed) Each substrate was cut into 50 mm × 50 mm × 0.7 mm pieces, ultrasonically cleaned with isopropanol and pure water for 5 minutes each, and then irradiated with UV light for 30 minutes and exposed to ozone for cleaning. Subsequently, the first to third glass substrates were stacked sequentially on a vacuum deposition apparatus.

[0450] Compound 1 was deposited on the anode until... The thickness is increased to form a hole transfer layer, and HT3 and HAT-CN are deposited on the hole transfer layer at a weight ratio of 9:1 to form a layer with... A hole injection layer of a certain thickness.

[0451] TCTA and NPB They are deposited sequentially on the hole injection layer to form a hole transport layer.

[0452] m-MTDATA A first hole transport (HT) auxiliary layer is deposited on the hole transport layer, and ADN and DPAVBi (DPAVBi content: 5wt%) are co-deposited on it as the first emitter layer. The thickness of BAlq Deposited thereon as a first buffer layer, and ET1 deposited thereon as a first electron transport layer. The thickness is increased to form an electron transport region, thereby forming the first emission unit.

[0453] BCP and Li (Li content: 1 wt%) were co-deposited on the first emitter unit until... The thickness is increased to form an n-type charge generation layer, and HT3 and HAT-CN are co-deposited on the n-type charge generation layer at a weight ratio of 9:1 to form a layer with... A p-type charge generation layer of a certain thickness is formed, thereby creating the first charge generation layer.

[0454] Here, the LUMO energy level difference between the first electron transport layer and the n-type charge generation layer is 0.15 eV.

[0455] HT3 A second hole transport (HT) auxiliary layer is deposited on the first charge generation layer, and ADN and DPAVBi (DPAVBi content: 5wt%) are co-deposited on it as a second emitter layer. The thickness of BAlq Deposited on it as a second buffer layer, and ET1 deposited on it as a second electron transport layer. The thickness is increased to form an electron transport region, thereby forming a second emission unit.

[0456] BCP and Li (Li content: 1 wt%) were co-deposited on the second emitter unit until... The thickness is increased to form an n-type charge generation layer, and HT3 and HAT-CN are co-deposited on the n-type charge generation layer at a weight ratio of 9:1 to form a layer with... A p-type charge generation layer of a certain thickness is formed, thereby creating a second charge generation layer.

[0457] HT3 is deposited on the second charge generation layer as a third hole transport (HT) auxiliary layer. The thickness is such that ADN and DPAVBi (DPAVBi content: 5wt%) are co-deposited on it as a third emitter layer. The thickness, and the BAlq It is deposited on top as a third buffer layer, thus forming the third emission unit.

[0458] ET1 is deposited on the third emitter unit to form a structure with... The thickness of the third electron transport layer, and the Yb It is deposited on top as an electron injection layer, thereby forming an electron transport region.

[0459] AgMg The cathode is co-deposited on the electron transport region at a weight ratio of 10:1, and CP1 is... It is deposited on the cathode, thus completing the manufacturing of the light-emitting device.

[0460] Here, the triplet level of the third buffer layer is -2.8 eV, and the triplet level of the ADN contained in the third emitter layer is -3.1 eV.

[0461] Furthermore, the LUMO level of the third emitter layer is -2.55 eV, and the LUMO level of the third electron transport layer is -2.77 eV.

[0462]

[0463] Comparative Example 1

[0464] The light-emitting device is manufactured in essentially the same manner as in Example 1, but a hole injection layer is formed on the anode instead of a hole transfer layer.

[0465] Example 2

[0466] The light-emitting device was manufactured in essentially the same manner as in Example 1, but compound 49 was used instead of compound 1.

[0467] Example 3

[0468] The light-emitting device was manufactured in essentially the same manner as in Example 1, but compound 37 was used instead of compound 1.

[0469] Example 4

[0470] The light-emitting device was manufactured in essentially the same manner as in Example 1, but compound C1 was used instead of ADN.

[0471] Compound C1

[0472]

[0473] Comparative Example 2

[0474] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 1, but compound C1 was used instead of ADN.

[0475] Example 5

[0476] The light-emitting device was manufactured in essentially the same manner as in Example 2, but compound C1 was used instead of ADN.

[0477] Example 6

[0478] The light-emitting device was manufactured in essentially the same manner as in Example 3, but compound C1 was used instead of ADN.

[0479] Comparative Example 3

[0480] The light-emitting device was manufactured in essentially the same manner as in Example 1, but instead of forming a hole transfer layer on the anode, a hole injection layer was formed on the anode, and compound 1 was deposited between the first charge generation layer and the second hole transport (HT) auxiliary layer. The thickness is sufficient to form a hole transfer layer.

[0481] Comparative Example 4

[0482] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 3, but comparative compound 49 was used instead of compound 1.

[0483] Comparative Example 5

[0484] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 3, but comparative compound 37 was used instead of compound 1.

[0485] Comparative Example 6

[0486] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 3, but compound C1 was used instead of ADN.

[0487] Comparative Example 7

[0488] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 4, but compound C1 was used instead of ADN.

[0489] Comparative Example 8

[0490] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 5, but compound C1 was used instead of ADN.

[0491] Comparative Example 9

[0492] The light-emitting device was manufactured in essentially the same manner as in Example 1, but instead of forming a hole transfer layer on the anode, a hole injection layer was formed on the anode, and compound 1 was deposited between the second charge generation layer and the third hole transport (HT) auxiliary layer. The thickness is sufficient to form a hole transfer layer.

[0493] Comparative Example 10

[0494] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 9, but comparative compound 49 was used instead of compound 1.

[0495] Comparative Example 11

[0496] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 9, but comparative compound 37 was used instead of compound 1.

[0497] Comparative Example 12

[0498] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 9, but compound C1 was used instead of ADN.

[0499] Comparative Example 13

[0500] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 10, but compound C1 was used instead of ADN.

[0501] Comparative Example 14

[0502] The light-emitting device was manufactured in essentially the same manner as in Comparative Example 11, but compound C1 was used instead of ADN.

[0503] Evaluation Example 1

[0504] The driving voltage (V) and efficiency (Cd / A) of the light-emitting devices manufactured in Examples 1 to 6 and Comparative Examples 1 to 14 were measured at a luminance of 2,000 nits using a color luminance meter and a Keithley source-measurement unit. The results are shown in Table 1.

[0505] Table 1

[0506]

[0507]

[0508] Referring to the results in Table 1, hole injection characteristics can be improved when a hole transfer layer containing an electron transport material (e.g., composed of an electron transport material) is adjacent to the anode. Therefore, substantially equal levels of drive voltage characteristics and excellent efficiency characteristics can be achieved compared to the comparative example.

[0509] Conversely, compared to the apparatus of the embodiment, when the hole transfer layer is not formed in the emitter unit adjacent to the anode, but in the emitter unit not adjacent to the anode, the driving voltage is not sufficiently reduced and the efficiency is degraded.

[0510] Evaluation Example 2

[0511] The lifespan measurement device measured the lifespan (T) of each of the light-emitting devices manufactured in Examples 1 to 6, and Comparative Examples 1 and 2, at a brightness of 4,000 nits under constant current and room temperature. 97 The results are shown in Table 2. The lifespan of each of the light-emitting devices of Examples 1 to 3 and Comparative Example 1 was measured (normalized) relative to 100% of the lifespan of Comparative Example 1 (e.g., as a baseline). The lifespan of each of the light-emitting devices of Examples 4 to 6 and Comparative Example 2 was measured (normalized) relative to 100% of the lifespan of Comparative Example 2 (e.g., as a baseline).

[0512] Table 2

[0513] Service life Conditions (Lifespan Measurement @ Brightness) Example 1 100％ T97@4,000 nits Example 2 100％ T97@4,000 nits Example 3 100％ T97@4,000 nits Comparative Example 1 100％ T97@4,000 nits Example 4 100％ T97@4,000 nits Example 5 100％ T97@4,000 nits Example 6 100％ T97@4,000 nits Comparative Example 2 100％ T97@4,000 nits

[0514] Referring to the results in Table 2, although the light-emitting device according to one or more embodiments further includes an additional hole transfer layer, its lifetime can be substantially equivalent to that of the light-emitting device of the comparative example. These results show that hole injection from the hole transport layer to the emission layer is stable.

[0515] Evaluation Example 3

[0516] The transient electroluminescence of the light-emitting devices of Examples 1 to 6, and Comparative Examples 1 and 2 was measured using a transient EL device. The ratio of fluorescence to delayed fluorescence was measured in a dark room at room temperature, and the results are shown in Table 3.

[0517] Table 3

[0518]

[0519]

[0520] Referring to the results in Table 3, delayed fluorescence was effectively generated in the light-emitting devices of Examples 1 to 6. By using a single material in the hole transport layer, hole injection was increased, thereby increasing triplet-triplet annihilation (TTA) and thus leading to improved efficiency.

[0521] As is evident from the description above, organic light-emitting devices can have low driving voltage, improved efficiency, and / or long lifespan.

[0522] As used herein, the terms “substantially,” “about,” and similar terms are used as terms of approximation rather than as terms of degree, and are intended to explain the inherent biases in measurements or calculations that would be recognized by one of ordinary skill in the art.

[0523] Any numerical ranges listed herein are intended to include all subranges of the same numerical precision falling within the listed range. For example, the range “1.0 to 10.0” is intended to include all subranges between the listed minimum value of 1.0 and the listed maximum value of 10.0 (and inclusive), i.e., a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit listed herein is intended to include all lower numerical limits falling within it, and any minimum numerical limit listed in this specification is intended to include all higher numerical limits falling within it. Therefore, the applicant reserves the right to amend this specification (including the claims) to expressly list any subranges falling within the scope expressly listed herein.

[0524] It should be understood that the embodiments described herein are for descriptive purposes only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered as other similar features or aspects applicable to other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made herein without departing from the spirit and scope defined by the claims and their equivalents.

Claims

1. A light-emitting device comprising: a first electrode; a second electrode facing the first electrode; m emission units positioned between the first electrode and the second electrode; and m-1 charge generation layers each positioned between two adjacent emission units of the m emission units and comprising m-1 n-type charge generation layers and m-1 p-type charge generation layers, wherein m is 2 or an integer greater than 2, the m emission units each comprise a hole transport region, an emission layer, and an electron transport region arranged in this order, a first hole transport region in a first emission unit of the m emission units closest to the first electrode comprises a hole transfer layer and at least one of a hole injection layer and a hole transport layer arranged in this order between the first electrode and a first emission layer in the first emission unit, the hole transfer layer is a single layer composed of an electron transport compound, a highest occupied molecular orbital energy level of the hole transfer layer is -6.0 eV to -5.3 eV, and wherein the electron transport compound is represented by Formula 1 or Formula 2: Formula 1 Formula 2 wherein, in Formulae 1 and 2, a1 and a2 are each independently 1, 2, or 3, b1 and b2 are each independently 0, 1, 2, 3, 4, or 5, c1 and c2 are each independently 1, 2, 3, 4, or 5, at least one R2 group is -P(=O)(Q1)(Q2) or -P(=S)(Q1)(Q2), deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group.

2. The light-emitting device according to claim 1, wherein m is 3 or an integer greater than 3.

3. The light-emitting device according to claim 1, wherein at least one of Ar1, L1, and R1 is independently selected from the group consisting of: a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, and a triazine group; and 5. The light-emitting device according to claim 1, wherein a difference between a HOMO energy level of the hole transfer layer and a HOMO energy level of the hole injection layer or the hole transport layer adjacent to the hole transfer layer is 0.15 eV or greater.

6. The light-emitting device according to claim 1, wherein the first emission layer comprises a compound represented by Formula 3: Formula 3 wherein, in Formula 3, a3 is 1, 2, or 3, b3 is an integer of 0 to 5, c3 is an integer of 1 to 5, and 7. The light-emitting device according to claim 1, wherein the first emission unit further comprises an electron blocking layer between the hole injection layer or hole transport layer and the first emission layer.

8. The light-emitting device according to claim 7, wherein the electron blocking layer comprises a material having a triplet energy level higher than a triplet energy level of a compound contained in the first emission layer.

9. The light-emitting device according to claim 1, wherein m-1 hole transport regions other than the first hole transport region in the first emission unit do not comprise a hole transfer layer. ​ ​ ​ ​ ​ [Ar1] a1 -[(L1) b1 -R1] c1 ​ [Ar2] a2 -[(L2) b2 -R2] c2 and ​ Ar1, Ar2, L1and L2are each independently unsubstituted or substituted with at least one R 10a substituted C3-C 60 substituted C3-C 10a substituted C1-C 60 heterocyclic group, ​ ​ R1 and R2 are each independently unsubstituted or substituted by at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q1)(Q2)(Q3), -C(=O)(Q1), -S(=O)2(Q1), -P(=O)(Q1)(Q2) or -P(=S)(Q1)(Q2), ​ at least one of Ar1, L1, and R1is independently unsubstituted or substituted with at least one R 10a substituted C1-C6alkyl containing a π electron deficient nitrogen 60 cyclic group, and ​ wherein R 10a is: ​ Each of the following groups is unsubstituted or replaced: -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group, C6-C 60 aryl thioyl groups, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 C1-C substituted by (or any combination thereof) 60 Alkyl groups, C2-C 60 alkenyl groups, C2-C 60 alkynyl group or C1-C 60 Alkoxy group; Each of the following groups is unsubstituted or replaced: -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl groups, C2-C 60 alkenyl groups, C2-C 60 alkynyl group, C1-C 60 alkoxy group, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group, C6-C 60 aryl thioyl groups, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C substituted by any combination thereof 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group or C6-C 60 aryl thioyl group; or -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=0)(Q 31 ), -S(=0)2(Q 31 ) or -P(=0)(Q 31 )(Q 32 ), Q1to Q3, Q 11 to Q 13 , Q 21 to Q 23 and Q 31 to Q 33 are each independently hydrogen; deuterium; -F; -CI; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C 60 alkyl group; a C2-C 60 alkenyl group; a C2-C 60 alkynyl group; a C1-C 60 alkoxy group; or a C3-C 60 carbocyclic group or a C1-C 60 heterocyclic group, each unsubstituted or substituted with deuterium, -F, a cyano group, a C1-C 60 alkyl group, a C1-C 60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof. ​ ​ ​ each independently substituted with at least one R 10a substituted pyridine, pyrimidine, pyrazine, pyridazine, and triazine groups.

4. The light emitting device of claim 1 wherein at least one of Ar2, L2, and R2 is independently an unsubstituted or substituted π-electron rich C3-C10 10a cyclic group. 60 cyclic group. ​ ​ ​ [Ar3] a3 -[(L3) b3 -R3] c3 and wherein ​ Ar3and L3are each independently an unsubstituted or substituted C3-C10carbocyclic group or an unsubstituted or substituted heterocyclic group, 10a substituted C3-C10carbocyclic group or an unsubstituted or substituted heterocyclic group, 60 substituted C3-C10carbocyclic group or an unsubstituted or substituted heterocyclic group, 10a substituted C3-C10carbocyclic group or an unsubstituted or substituted heterocyclic group, 60 substituted C3-C10carbocyclic group or an unsubstituted or substituted heterocyclic group, ​ ​ R3is hydrogen, deuterium, -F, -CI, -Br, -I, a hydroxyl group, a cyano group, a nitro group, an unsubstituted or by at least one R 10a substituted C1-C 60 alkyl group, an unsubstituted or by at least one R 10a substituted C2-C 60 alkenyl group, an unsubstituted or by at least one R 10a substituted C2-C 60 alkynyl group, an unsubstituted or by at least one R 10a substituted C1-C 60 alkoxy group, an unsubstituted or by at least one R 10a substituted C3-C 60 carbocyclic group, an unsubstituted or by at least one R 10a substituted C1-C 60 heterocyclic group, -Si(Q1)(Q2)(Q3), -N(Q1)(Q2), -B(Q1)(Q2), -C(=0)(Q1), -S(=0)2(Q1) or -P(=0)(Q1)(Q2), wherein Q1to Q3are each independently hydrogen; deuterium; -F; -CI; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C 60 alkyl group; a C2-C 60 alkenyl group; a C2-C 60 alkynyl group; a C1-C 60 alkoxy group; or a C3-C 60 alkyl group, a C1-C 60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof, and wherein each R1is independently hydrogen; deuterium; -F; -CI; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C 60 carbocyclic group or a C1-C 60 heterocyclic group, ​ at least one of Ar3, L3, and R3is independently unsubstituted or substituted with at least one R 10a substituted C3-C 60 carbocyclic group. ​ ​ ​ 10. The light-emitting device according to claim 1, wherein m-1 hole transport regions other than the first hole transport region in the first emissive unit each independently comprise a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof, and the m electron transport regions each independently comprise a hole blocking layer, an electron transport layer, an electron injection layer, a buffer layer, or any combination thereof.

11. The light-emitting device according to claim 1, wherein the m emissive units are intended to emit blue light having a maximum emission wavelength of 440 nm to 510 nm.

12. The light-emitting device according to claim 1, wherein the m emissive layers included in the m emissive units each independently include a phosphorescent dopant, a fluorescent dopant, a delayed fluorescence material, or any combination thereof.

13. The light-emitting device according to claim 1, wherein a ratio of a delayed fluorescence component to a sum of a fluorescent component and a delayed fluorescence component is 30% or higher according to a measurement of a transient electroluminescence of the light-emitting device.

14. The light-emitting device according to claim 1, wherein the first electrode has a work function of -5.2 eV to -4.8 eV.

15. The light-emitting device according to claim 1, further comprising a first cover layer outside the first electrode and a second cover layer outside the second electrode, wherein at least one of the first cover layer and the second cover layer comprises a material having a refractive index of 1.6 or more at a wavelength of 589 nm.

16. An electronic device comprising the light-emitting device according to any one of claims 1 to 15.

17. The electronic device according to claim 16, wherein color coordinates measured at a front viewing angle of the electronic device are 0.09 to 0.

15.

18. The electronic device of claim 16, further comprising: a package unit on the light-emitting device; and a functional layer on the package unit, wherein the functional layer comprises a touch screen layer, a polarizing layer, a color filter, a color conversion layer, or any combination thereof.

19. The electronic device according to claim 16, comprising a quantum dot or an optical member including the quantum dot located in at least one traveling direction of light emitted from the light-emitting device.

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