A thermally conductive structure and its fabrication method, a thermally conductive system, a chip packaging structure, and an electronic device.

Abstract

The embodiment of the present application provides a heat-conducting structure and a method for making the same, a heat-conducting system, a chip packaging structure and an electronic device. The second organic material in the heat-conducting structure diffuses toward the outer surface of the heat-conducting structure, and the second organic material diffused outward forms an adhesive layer between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink, and the adhesive layer connects the heat-conducting structure to the heating element and / or connects the heat-conducting structure to the heat sink, ensuring that the heat-conducting structure maintains close contact with the surface of the heating element / heat sink, thereby avoiding the problem of overheating of the heating element caused by stratification at the interface between the heat-conducting structure and the heating element / heat sink during use; in addition, the second organic material diffused outward can fill the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the heat sink, improving the microscopic wettability of the heat-conducting structure, thereby reducing the interface contact thermal resistance, and reducing the application thermal resistance of the heat-conducting structure.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of heat conduction technology, and in particular to a heat conduction structure and a manufacturing method thereof, a heat conduction system, a chip packaging structure and an electronic device. Background Art

[0002] As electronic devices continue to integrate more powerful functions into smaller components, temperature control has become one of the most critical challenges in design. In other words, how to effectively remove the more heat generated by greater unit power is an urgent problem to be solved when the architecture is tightened and the operating space is getting smaller and smaller.

[0003] At present, the heat generated by the chip is mainly transferred to the heat sink through a thermal pad to achieve heat dissipation of the chip. Specifically, the thermal pad is set on the chip, and the other side of the thermal pad away from the chip is connected to the heat sink, wherein the chip and the thermal pad, as well as the thermal pad and the heat sink are connected by an adhesive layer.

[0004] However, during the use of the above-mentioned thermal pad, as the temperature changes, the adhesion between the chip and the thermal pad and between the thermal pad and the heat sink decreases, and stratification is likely to occur between the thermal pad and the chip and / or the thermal pad and the heat sink, so that the heat on the chip cannot be dissipated in time, causing the chip junction temperature to be too high. Summary of the invention

[0005] The embodiments of the present application provide a heat-conducting structure and a manufacturing method thereof, a heat-conducting system, a chip packaging structure and an electronic device, which improve the bonding strength between the heat-conducting structure and the heating element and the heat sink, reduce the contact thermal resistance between the heat-conducting structure and the heating element and the heat sink, improve the heat-conducting effect of the heat-conducting structure, and solve the problem of excessively high junction temperature of the chip caused by easy delamination between the existing thermal pad and the chip and / or heat sink.

[0006] In a first aspect, an embodiment of the present application provides a heat-conducting structure for transferring heat generated by a heating element to a heat sink, comprising:

[0007] A plurality of heat-conducting films and one or more dielectric layers, wherein the heat-conducting films and the dielectric layers are arranged alternately;

[0008] One end of the plurality of thermally conductive films faces the heating element, and the other end of the plurality of thermally conductive films faces the radiator;

[0009] The dielectric layer at least comprises: a first organic material and a second organic material located in the first organic material;

[0010] The first organic material is used to bond two adjacent thermally conductive films;

[0011] The second organic material is used to diffuse toward the outer surface of the heat-conducting structure when the heat-conducting structure is at a preset temperature or a preset pressure, and the second organic material diffused outward forms an adhesive layer at least between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink, and the adhesive layer is used to connect the heat-conducting structure to the heating element and / or to connect the heat-conducting structure to the heat sink.

[0012] The heat-conducting structure provided by the embodiment of the present application is arranged alternately by the heat-conducting film and the dielectric layer, and one end of the heat-conducting film faces the heating element and the other end faces the radiator. The dielectric layer contains at least a first organic material and a second organic material located in the first organic material. The second organic material diffuses toward the outer surface of the heat-conducting structure at a preset temperature or a preset pressure. The second organic material diffuses outward at least between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator to form an adhesive layer. The adhesive layer connects the heat-conducting structure to the heating element and / or connects the heat-conducting structure to the radiator, ensuring that the heat-conducting structure maintains close contact with the surface of the heating element / radiator, thereby avoiding the problem of overheating of the heating element caused by delamination at the interface between the heat-conducting structure and the heating element / radiator during use. In addition, the second organic material diffused outward can fill the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the radiator, improve the microscopic wettability of the heat-conducting structure, thereby reducing the interface contact thermal resistance and reducing the application thermal resistance of the heat-conducting structure.

[0013] Moreover, the second organic material can be filled in local micropores or gaps between the thermally conductive structure and the heating element and / or between the thermally conductive structure and the heat sink, so that the contact area between the generated adhesive layer and the heating element / heat sink is increased and the bonding force is greater.

[0014] In a possible implementation, the preset temperature is greater than or equal to 35°C.

[0015] In one possible implementation, the preset pressure is greater than or equal to 5 psi.

[0016] In a possible implementation, the second organic material diffused outward forms an adhesive layer having van der Waals force, chemical bond binding force or bite force at least between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink. In this way, the purpose of close bonding between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink is achieved, and the higher the temperature of the heating element, the more the second organic material in the heat-conducting structure diffuses outward, so that the bonding force between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink is greater, thereby avoiding the problem of delamination between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink due to excessive temperature.

[0017] In a possible implementation manner, at the preset temperature or the preset pressure, the second organic material diffuses through the body of the first organic material.

[0018] In a possible implementation manner, the first organic material is in a solid or semi-solid state, and the second organic material is in a liquid or semi-solid state.

[0019] In a possible implementation, the bonding force between the adhesive layer and the heat sink, and / or the bonding force between the adhesive layer and the heating element, is greater than the cohesive force of the dielectric layer. This ensures that even if the heat-conducting structure is stretched and damaged, the heat-conducting structure and the heating element / heat sink remain bonded, ensuring a strong bonding force between the heat-conducting structure and the heating element / heat sink, and avoiding the problem of delamination between the heat-conducting structure and the heating element / heat sink.

[0020] In a possible implementation, the second organic material is a material that undergoes a dehydration condensation reaction or a polymerization reaction with the heating element and / or with at least a portion of the outer surface of the heat sink facing the heat conductive structure under preset reaction conditions, and the preset reaction conditions include reaction temperature, reaction humidity or reaction medium, and the reaction temperature is greater than or equal to 35° C., and the reaction humidity is greater than or equal to 10%. In this way, a chemical bond is generated at the junction between the heat conductive structure and the heating element and / or between the heat conductive structure and the heat sink, avoiding the temperature at which the bonding strength decreases when the temperature rises and the delamination occurs due to the adhesive layer bonding between the existing thermal pad and the heating element / heat sink.

[0021] In a possible implementation, the reaction temperature is greater than or equal to 35°C.

[0022] In a possible implementation, the reaction humidity is greater than or equal to 10%.

[0023] In a possible implementation, the second organic material includes a liquid material containing active hydroxyl groups and a liquid material containing hydrolyzable groups. In this way, the liquid material containing hydrolyzable groups in the second organic material provides hydrolyzable groups, and the hydrolyzable groups undergo a hydrolysis reaction to obtain hydroxyl groups. After the hydroxyl groups reach sufficient activity, the second organic material undergoes a dehydration condensation reaction at the metal surface between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator under accelerating factors such as high temperature, moisture or metal surface to form an adhesive layer. In this way, a chemical bond can be formed between the metal surface of the heating element and the adhesive layer, a chemical bond is formed between the metal surface of the radiator and the adhesive layer, and an interface bonding similar to a chelating action is formed between the metal surface of the radiator and the adhesive layer, so that a chemical bonding force is formed between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator, and the bonding is more reliable and less prone to delamination.

[0024] In a possible implementation, the liquid material of the active hydroxyl group includes a polyol. The polyol can provide a hydroxyl group, and the hydrolyzable group undergoes hydrolysis, so that the liquid of the hydrolyzable group has a hydroxyl functional group. After the hydroxyl group reaches sufficient activity, under accelerating factors such as high temperature, moisture or metal surface, the liquid material containing the hydroxyl functional group undergoes a dehydration condensation reaction to form an adhesive layer.

[0025] In a possible implementation, the liquid material containing the hydrolyzable group is a silane coupling agent. After the silane coupling agent is hydrolyzed, when the hydroxyl groups in the second organic material are sufficiently active, the silane coupling agent undergoes a dehydration condensation reaction to form an adhesive layer.

[0026] In a possible implementation, the polyol is at least one of butanetriol, pentaerythritol, glycerol, trimethylolethane, xylitol or sorbitol, and the silane coupling agent is trialkoxysilane, or the silane coupling agent is octyltriethoxysilane.

[0027] In a possible implementation, the adhesive layer formed after the polymerization reaction of the second organic material has a pressure-sensitive property. The adhesive layer thus formed can bond the heat-conducting structure to the heating element and / or the heat-conducting structure to the heat sink under pressure.

[0028] In a possible implementation, the second organic material is an unsaturated acrylic material, so that the second organic material can undergo a polymerization reaction under preset reaction conditions to form an adhesive layer.

[0029] In a possible implementation, the unsaturated acrylic material is an acrylic material containing an ester functional group, or the unsaturated acrylic material is an acrylic material containing a strong hydrophilic group such as a carboxyl group or a hydroxyl group.

[0030] In a possible implementation manner, an angle formed between a surface of the heat-conducting film facing the dielectric layer and a thickness direction of the heat-conducting structure is greater than 0° and less than or equal to 45°.

[0031] Alternatively, the angle formed between the side of the heat-conducting film facing the dielectric layer and the side of the heat-conducting film facing away from the dielectric layer and the thickness direction of the heat-conducting structure is greater than 0° and less than or equal to 45°. In this way, the heat-conducting film is compressed and deformed to absorb stress, thereby significantly reducing the compressive stress of the heat-conducting structure, so that when the heat-conducting structure 1 is compressed by external force, the plane size of the heat-conducting structure does not expand significantly, thereby avoiding the risk of short circuit caused by the expansion of the size of the heat-conducting structure 100.

[0032] In a possible implementation, the first organic material is a polysilicone oil containing at least unsaturated siloxane. In this way, the first organic material contains unsaturated bonds, and the reactive functional groups can be activated by heating or light, so that the unsaturated bonds undergo addition polymerization to achieve curing.

[0033] In a possible implementation, the first organic material includes vinyl silicone oil and hydrogenated silicone oil, and the molecular weights of the vinyl silicone oil and the hydrogenated silicone oil are both less than 15000. In this way, the vinyl silicone oil and the hydrogenated silicone oil can undergo an addition reaction, so that the first organic material forms an organic silicone elastic material after curing.

[0034] In a possible implementation, the hydrogen-containing silicone oil includes at least one of terminal hydrogen silicone oil and side hydrogen silicone oil.

[0035] In a possible implementation manner, the first organic material is an organic chemical containing acrylic acid, polyurethane, epoxy or polyimide.

[0036] In a possible implementation, the first organic material includes 4-hydroxybutyl acrylate and divinyl adipate.

[0037] In a possible implementation manner, the weight percentage of the second organic material diffused outwards in the dielectric layer is less than or equal to 50%.

[0038] In a possible implementation manner, the weight percentage of the second organic material in the first organic material is less than 50%.

[0039] In a possible implementation manner, the thickness of the adhesive layer is less than or equal to 1 μm.

[0040] In a possible implementation, the thickness of the heat conductive structure is greater than or equal to 0.1 mm and less than or equal to 5 mm.

[0041] In a possible implementation, the thermal conductivity of the heat-conducting structure in the first direction is greater than the thermal conductivity of the heat-conducting structure in the second direction, and the thermal conductivity of the heat-conducting structure in the third direction is greater than the thermal conductivity of the heat-conducting structure in the second direction, wherein the first direction is a direction perpendicular to a side of the heat-generating element facing the heat-conducting structure, the second direction is a direction perpendicular to a side of the heat-conducting film facing the dielectric layer, and the third direction is a direction perpendicular to the first direction and the second direction. In this way, when the heat-generating element and the heat sink are located on both sides of the heat-conducting structure along the first direction (i.e., the Z direction), since the thermal conductivity of the heat-conducting structure in the first direction is large, it is ensured that the heat-conducting structure quickly transfers the heat generated by the heat-generating element to the heat sink, thereby achieving the purpose of quickly dissipating heat from the heat-generating element.

[0042] In a possible implementation manner, a ratio of a thermal conductivity coefficient of the heat-conducting structure in the first direction to a thermal conductivity coefficient of the heat-conducting structure in the second direction is greater than or equal to 5.

[0043] In a possible implementation manner, the thermal conductivity of the heat-conducting structure in the first direction is greater than or equal to 35 W / mk.

[0044] In a possible implementation manner, the thickness of each of the thermally conductive films is greater than or equal to 7 μm and less than or equal to 200 μm.

[0045] In a possible implementation, the thermally conductive film is a compressible thermally conductive film. In this way, when the thermally conductive structure is subjected to compressive stress, the stress can be transmitted to the internal thermally conductive film, and the stress can be absorbed by the compressive deformation of the thermally conductive film, thereby reducing the compressive stress. After the thermally conductive structure is compressed, the plane size of the thermally conductive structure does not expand significantly, and the density of the corresponding thermally conductive structure increases, thereby avoiding the risk of short circuit caused by the expansion of the plane size of the thermally conductive structure when it is compressed.

[0046] In a possible implementation, the density of the compressible thermally conductive film is 1.2 to 1.95 g / cm 3 .

[0047] In a possible implementation, the thermally conductive film is a graphene film or a graphite film. Thus, when the thermally conductive film is a graphene film, the graphene film is compressible, thereby ensuring that the thermally conductive film is a compressible thermally conductive film.

[0048] The second aspect of the present application provides a heat conduction system, comprising a heating element and the above-mentioned heat conduction structure, wherein the heat conduction structure is used to transfer heat from the heating element. Thus, by including the above-mentioned heat conduction structure, the second organic material in the heat conduction structure diffuses outward to form an adhesive layer with van der Waals force, chemical bond binding force or bite force between the heating element and the heat conduction structure, and the adhesive layer tightly connects the heating element and the heat conduction structure to avoid the problem of stratification between the heating element and the heat conduction structure.

[0049] In a possible implementation, a heat sink is further included, and the heat-conducting structure is located between the heating element and the heat sink, and the heat-conducting structure is used to transfer heat from the heating element to the heat sink. In this way, the second organic material in the heat-conducting structure diffuses outwards to form an adhesive layer with van der Waals force, chemical bond binding force or bite force between the heating element and the heat-conducting structure and between the heating element and the heat sink, and the adhesive layer tightly connects the heating element and the heat-conducting structure and between the heat-conducting structure and the heat sink.

[0050] A third aspect of the present application provides a chip packaging structure, comprising at least: a chip arranged on a packaging carrier, a packaging heat dissipation cover and any of the above-mentioned heat-conducting structures, wherein the heat-conducting structure is located between the chip and the packaging heat dissipation cover;

[0051] Moreover, under a preset temperature or a preset pressure, the second organic material in the thermally conductive structure diffuses outwardly between the thermally conductive structure and the chip and / or between the thermally conductive structure and the package heat dissipation cover to form an adhesive layer, and the thermally conductive structure and the chip and / or between the thermally conductive structure and the package heat dissipation cover are connected via the adhesive layer.

[0052] By including the above-mentioned heat-conducting structure in the chip packaging structure, an adhesive layer is formed between the heat-conducting structure and the chip and the heat-conducting structure and / or between the heat-conducting structure and the packaging heat-dissipating cover. During the generation of the adhesive layer, a chemical bonding force is formed at the junction between the heat-conducting structure and the chip and / or between the heat-conducting structure and the packaging heat-dissipating cover, ensuring that the heat-conducting structure and the surface of the chip / packaging heat-dissipating cover are closely bonded, thereby avoiding the problem of chip overheating caused by delamination at the interface between the heat-conducting structure and the chip / packaging heat-dissipating cover during use. In addition, the second organic material diffused outward can fill the local micropores between the heat-conducting structure and the chip and / or between the heat-conducting structure and the packaging heat-dissipating cover, improve the microscopic wettability of the heat-conducting structure, thereby reducing the interface contact thermal resistance, reducing the application thermal resistance of the heat-conducting structure, and achieving the purpose of good heat dissipation of the chip.

[0053] In a possible implementation, it also includes: a fixed frame, the fixed frame is located between the packaging carrier and the packaging heat dissipation cover, and the fixed frame, the packaging carrier and the packaging heat dissipation cover form a cavity, and the chip and the heat conductive structure are located in the cavity.

[0054] In a possible implementation, the fixed frame and the package heat dissipation cover are fastened together by elastic fasteners, so that after the fixed frame and the package heat dissipation cover are connected, there is a compressible margin between the fixed frame and the package heat dissipation cover, so that after a force is applied to the package heat dissipation cover, pressure can be applied to the heat conductive structure, and under the action of pressure, the second organic material of the heat conductive structure diffuses outward and undergoes a chemical reaction to form an adhesive layer.

[0055] Alternatively, the fixed frame and the package heat dissipation cover are integrated. In this way, the package can be completed by connecting the package carrier and the fixed frame during packaging, and the packaging efficiency is improved. Moreover, the fixed frame and the package heat dissipation cover are integrated, so there is no assembly gap between the fixed frame and the package heat dissipation cover. Therefore, after the packaging is completed, it is prevented that water vapor enters the cavity surrounded by the package carrier, the package heat dissipation cover and the fixed frame through the assembly gap between the fixed frame and the package heat dissipation cover to affect the chip.

[0056] In a possible implementation manner, the fixing frame and the packaging carrier are tightly connected.

[0057] The fourth aspect of the embodiments of the present application provides an electronic device, comprising at least: any of the chip packaging structures described above. In this way, the heat generated by the operation of the chip causes the second organic material to diffuse between the heat-conducting structure and the chip and / or between the heat-conducting structure and the package heat dissipation cover, and the second organic material that diffuses outward undergoes a chemical reaction to form an adhesive layer, which connects the heat-conducting structure to the chip and / or the heat-conducting structure to the package heat dissipation cover. In this way, the heat generated by the chip is transferred to the package heat dissipation cover through the heat-conducting structure, and the package heat dissipation cover transfers the heat to the outside of the electronic device by contacting with the housing of the electronic device. In addition, the second organic material that diffuses outward can fill the local micropores between the heat-conducting structure and the chip and / or the heat-conducting structure and the package heat dissipation cover, improve the microscopic wettability of the heat-conducting structure, thereby reducing the interface contact thermal resistance, reducing the application thermal resistance of the heat-conducting structure, and achieving the purpose of good heat dissipation of the chip in the electronic device.

[0058] A fifth aspect of an embodiment of the present application provides an electronic device, comprising at least: a shell and a heating element, a heat sink and any of the above-mentioned heat-conducting structures arranged in the shell, wherein the heat-conducting structure is located between the heating element and the heat sink, and the heat sink is in contact with the shell.

[0059] In this way, under high temperature or pressure, the second organic material in the heat-conducting structure diffuses between the heating element and the heat-conducting structure and / or between the heat sink and the heat-conducting structure. When the reaction conditions are reached, the second organic material undergoes a chemical reaction, so that an adhesive layer with van der Waals force, chemical bond binding force or bite force is generated at the junction between the heating element and the heat-conducting structure and / or between the heat sink and the heat-conducting structure, ensuring that the heat-conducting structure is in close contact with the surface of the heating element / heat sink, avoiding the problem of overheating of the heating element in the electronic device caused by stratification at the interface between the heat-conducting structure and the heating element / heat sink during use. In addition, the second organic material diffused outward can be filled in the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the heat sink, improving the microscopic wettability of the heat-conducting structure, thereby reducing the interface contact thermal resistance and reducing the application thermal resistance of the heat-conducting structure. The heat generated by the heating element in the electronic device is dissipated outward in time, avoiding the heating element temperature being too high and causing the heating element to fail to work properly. Moreover, the second organic material diffused outward can fill the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the heat sink, so that the contact area between the formed adhesive layer and the heating element / heat sink is increased and the adhesive force is stronger.

[0060] In a possible implementation, the heat sink is in contact with the housing, so that the heat generated by the heating element is transferred to the heat sink through the heat-conducting structure, and the heat sink dissipates the heat to the outside of the electronic device through the housing of the electronic device, thereby achieving the purpose of dissipating heat from the heating element in the electronic device.

[0061] A fifth aspect of the embodiments of the present application provides a method for manufacturing a heat-conducting structure, the method comprising:

[0062] Providing a plurality of thermally conductive films, each of the thermally conductive films having a first surface and a second surface opposite to the first surface;

[0063] forming a dielectric layer on the first surface and the second surface of each of the thermally conductive films, wherein the dielectric layer comprises a first organic material and a second organic material located in the first organic material;

[0064] stacking and pressing a plurality of the thermally conductive films formed with the dielectric layer to form a block structure;

[0065] The block structure is cut to obtain a heat-conducting structure.

[0066] In a possible implementation, cutting the block structure to obtain the thermally conductive structure includes:

[0067] The block structure is cut along a cutting direction, and an angle is formed between a direction perpendicular to the thermal conductive film and the cutting direction, and the angle is greater than or equal to 0° and less than or equal to 45°.

[0068] In a possible implementation manner, forming a dielectric layer on the first surface and the second surface of each of the thermally conductive films includes:

[0069] Providing a first organic material and a second organic material, and mixing the second organic material into the first organic material to form an organic slurry;

[0070] The organic slurry is coated on the first surface and the second surface of each of the thermally conductive films to form the dielectric layer.

[0071] In a possible implementation, providing a first organic material and a second organic material to form an organic slurry includes:

[0072] Provide vinyl silicone oil, terminal hydrogen silicone oil, side hydrogen silicone oil and catalyst;

[0073] The vinyl silicone oil, the terminal hydrogen silicone oil, the pendant hydrogen silicone oil and the catalyst are mixed to prepare the first organic material;

[0074] Provide butanetriol and octyltriethoxysilane;

[0075] Mixing the butanetriol and the octyltriethoxysilane to prepare the second organic material;

[0076] mixing the first organic material and the second organic material to form the organic slurry;

[0077] Alternatively, providing the first organic material and the second organic material to form an organic slurry comprises:

[0078] Providing a first organic material, wherein the first organic material includes 4-hydroxybutyl acrylate and divinyl adipate;

[0079] providing a second organic material, the second organic material comprising 2-ethylhexyl acrylate;

[0080] providing an initiator, the initiator comprising a photopolymerization initiator and a thermal initiator;

[0081] The organic slurry is prepared by mixing the 4-hydroxybutyl acrylate, the divinyl adipate, the 2-ethylhexyl acrylate, the photopolymerization initiator and the thermal initiator. BRIEF DESCRIPTION OF THE DRAWINGS

[0082] Figure 1 A schematic diagram of assembling a heat-conducting structure, a heating element and a heat sink provided in one embodiment of the present application;

[0083] Figure 2 for Figure 1Schematic diagram of the cross-sectional structure in the AA direction;

[0084] Figure 3 A schematic diagram of the outward diffusion of the second organic material in the heat-conducting structure provided in an embodiment of the present application;

[0085] Figure 4 A schematic diagram of the cross-sectional structure of the heat-conducting structure, the heating element and the heat sink after being assembled according to an embodiment of the present application;

[0086] Figure 5 A schematic diagram of a cross-sectional structure of a heat-conducting structure provided in another embodiment of the present application;

[0087] Figure 6 A schematic flow chart of a method for manufacturing a heat-conducting structure provided in another embodiment of the present application;

[0088] Fig. 7A A schematic diagram of the structure of multiple thermally conductive films provided in another embodiment of the present application;

[0089] Figure 7B A schematic diagram of a structure in which a dielectric layer is formed on two surfaces of a plurality of heat-conducting films provided in another embodiment of the present application;

[0090] Figure 7C A schematic diagram of a block structure formed by laminating a plurality of heat-conducting films having a dielectric layer provided in another embodiment of the present application;

[0091] Fig.7D for Figure 7C Schematic diagram of the structure of the block structure cutting;

[0092] Fig. 7E is a schematic structural diagram of the obtained heat-conducting structure;

[0093] Fig. 8A A schematic cross-sectional view of a chip packaging structure provided by another embodiment of the present application;

[0094] Figure 8B A schematic cross-sectional view of a chip packaging structure provided by another embodiment of the present application;

[0095] Fig. 9 A three-dimensional schematic diagram of an electronic device provided by another embodiment of the present application;

[0096] Fig.10 A schematic diagram of a disassembled structure of an electronic device provided in another embodiment of the present application;

[0097] Fig.11 A schematic diagram of another disassembled structure of an electronic device provided in another embodiment of the present application;

[0098] Fig.12A schematic diagram of the addition reaction of various components in the first organic material in the thermal conductive structure provided in one embodiment of the present application.

[0099] Description of reference numerals:

[0100] 100-thermal conductive structure; 10-thermal conductive film; 20-medium layer; 21-first organic material; 22-second organic material; 221-adhesive layer;

[0101] 200-heating element; 201-chip; 300-heat sink; 301-package heat dissipation cover;

[0102] 400-chip packaging structure; 401-fixed frame; 402-packaging carrier; 403-first pad; 404-second pad; 405-elastic fastener;

[0103] 500 - mobile phone; 510 - housing; 501 - display screen; 502 - back cover; 5021 - inner surface; 520 - circuit board. DETAILED DESCRIPTION

[0104] The terms used in the implementation method part of this application are only used to explain the specific embodiments of this application, and are not intended to limit this application. The implementation method of the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0105] Application thermal resistance: It refers to the comprehensive thermal resistance of thermal materials when applied. Application thermal resistance can be considered to be composed of the thermal resistance of the thermal conductive material itself and the interface thermal resistance between the thermal conductive material and the two contact surfaces. The thermal resistance of the thermal conductive material itself is mainly determined by the thermal conductivity and application thickness of the thermal conductive material, while the interface thermal resistance is affected by many factors such as the thermal conductive material's own characteristics, pressure, roughness, etc.

[0106] The embodiment of the present application provides a heat-conducting structure, by setting a dielectric layer at least between adjacent heat-conducting films, the dielectric layer at least contains a first organic material and a second organic material located in the first organic material, the second organic material diffuses toward the outer surface of the heat-conducting structure at a preset temperature or a preset pressure, the second organic material diffused outward forms an adhesive layer between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink, the adhesive layer connects the heat-conducting structure to the heating element and / or connects the heat-conducting structure to the heat sink, ensuring that the heat-conducting structure maintains close contact with the surface of the heating element / heat sink, thereby avoiding the problem of overheating of the heating element caused by stratification at the interface between the heat-conducting structure and the heating element / heat sink during use; in addition, the second organic material diffused outward can fill the local micropores between the heat-conducting structure and the heating element and / or the heat-conducting structure and the heat sink, improve the microscopic wettability of the heat-conducting structure, thereby reducing the interface contact thermal resistance, and reducing the application thermal resistance of the heat-conducting structure.

[0107] The heat conduction structure provided in the embodiments of the present application is described in detail below in conjunction with the accompanying drawings and embodiments.

[0108] Embodiment 1

[0109] The heat-conducting structure 100 provided in the embodiment of the present application can transfer the heat generated by the heating element 200 to the heat sink 300. Figure 1 As shown, the heat-conducting structure 100 is located between the heating element 200 and the heat sink 300. Figure 1 After assembly as shown by the arrow in the figure, one side of the heat-conducting structure 100 contacts the heating element 200, and the other side of the heat-conducting structure 100 contacts the heat sink 300, so that the heat generated by the heating element 200 is transferred to the heat sink 300 through the heat-conducting structure 100, thereby achieving heat dissipation of the heating element 200.

[0110] The heating element 200 may be a chip or an electronic component that generates heat. In the embodiment of the present application, the heating element 200 is described as a chip. The heat sink 300 may be a heat sink, such as an aluminum plate, or the heat sink 300 may be a heat pipe, a heat sink fin, a graphene sheet, or other heat sink that can absorb heat.

[0111] See also Figure 1 As shown, the heat-conducting structure 100 may include: a plurality of heat-conducting films 10 and one or more dielectric layers 20, wherein the heat-conducting films 10 and the dielectric layers 20 are arranged alternately, for example, Figure 1 As shown in FIG. 1 , a plurality of thermally conductive films 10 and a plurality of dielectric layers 20 are alternately arranged in sequence along the X direction (e.g., dielectric layer 20, thermally conductive film 10, dielectric layer 20, thermally conductive film 10, dielectric layer 20). Of course, in some other examples, a plurality of thermally conductive films 10 and a plurality of dielectric layers 20 may also be alternately arranged along the Y direction. When a plurality of thermally conductive films 10 and a plurality of dielectric layers 20 are alternately arranged, as shown in FIG. Figure 1 As shown, a plurality of thermally conductive films 10 and a plurality of dielectric layers 20 are placed vertically.

[0112] One end of the plurality of thermally conductive films 10 faces the heating element 200, and the other end of the plurality of thermally conductive films 10 faces the heat sink 300, for example. Figure 1 As shown, the heat-conducting structure 100 is located between the heating element 200 and the heat sink 300 in the Z direction, the bottom ends of the plurality of heat-conducting films 10 face the heating element 200, and the top ends of the plurality of heat-conducting films 10 face the heat sink 300. Of course, in some other examples, the heat-conducting structure 100 may also be located between the heating element 200 and the heat sink 300 in the Y direction, the left ends of the plurality of heat-conducting films 20 face the heating element 200, and the right ends of the plurality of heat-conducting films 20 face the heat sink 300.

[0113] It should be noted that when a plurality of thermally conductive films 10 and dielectric layers 20 are alternately arranged to form a thermally conductive structure, one or more dielectric layers 20 may be located between two adjacent thermally conductive films 10, or Figure 1 As shown, a plurality of thermally conductive films 10 are located between two adjacent dielectric layers 20 .

[0114] In the present application examples, see Figure 2 As shown, the dielectric layer 20 may include at least: a first organic material 21 and a second organic material 22 located in the first organic material 21, for example Figure 1 As shown, the second organic material 22 is mixed in the first organic material 21. The first organic material 21 bonds two adjacent thermally conductive films 10, and the plurality of thermally conductive films 10 form an integral structure through the first organic material 21.

[0115] It should be noted that the dielectric layer 20 may further include a functional additive, such as a nanofiller for improving bonding strength.

[0116] It should be noted that the second organic material 22 being located in the first organic material 21 may mean that the second organic material 22 is completely located in the first organic material 21 , or that part of the second organic material 22 is located in the first organic material 21 and part of the second organic material 22 is exposed outside the first organic material 21 .

[0117] It should be noted that the first organic material 21 bonds two adjacent thermally conductive films 10 in that the first organic material 21 becomes solid or gel-like after curing to connect the two adjacent thermally conductive films 10, wherein during the curing process of the first organic material 21, the second organic material 22 does not participate in the curing reaction, for example, during the curing process of the first organic material 21, the second organic material 22 remains in a liquid or gel state.

[0118] The heat-conducting structure 100 is at a preset temperature or a preset pressure, and the second organic material 22 in the first organic material 21 diffuses toward the outer surface of the heat-conducting structure 100. For example, the second organic material 22 diffuses toward the two end surfaces of the heat-conducting structure 100 through the first organic material 21 under high temperature (for example, greater than or equal to 35° C.) or pressure (the diffusion direction is shown in FIG. 1 ). Figure 3 As shown by the dotted arrows in FIG. 1 ), the heat-conducting structure 100 has the second organic material 22 on both sides facing the heating element 200 and / or the heat sink 300 .

[0119] The second organic material 22 diffused outward forms an adhesive layer 221 at least between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300 when the preset reaction conditions are met (preset reaction conditions such as high temperature, moisture, metal surface, etc.). Figure 4As shown), for example, the second organic material 22 diffused outwards may form an adhesive layer 221 between the heat-conducting structure 100 and the heating element 200, or the second organic material 22 diffused outwards may form an adhesive layer 221 between the heat-conducting structure 100 and the heat sink 300, or, as shown Figure 4 As shown, the out-diffused second organic material 22 may form an adhesive layer 221 both between the thermal conductive structure 100 and the heat sink 300 and between the thermal conductive structure 100 and the heat sink 300 .

[0120] It should be noted that when the second organic material 22 diffuses outward, an adhesive layer 221 can be formed between the thermally conductive structure 100 and the heating element 200. The adhesive layer 221 connects the thermally conductive structure 100 and the heating element 200. At this time, the thermally conductive structure 100 and the heat sink 300 can be connected by, for example, a glue layer. In this way, it is not easy for the thermally conductive structure 100 and the heating element 200 to be delaminated, thereby solving the problem of easy delamination between the existing thermal pad and the chip, which leads to excessive chip temperature.

[0121] Alternatively, when the second organic material 22 diffused outward can form an adhesive layer 221 between the thermal conductive structure 100 and the heat sink 300, the adhesive layer 221 connects the thermal conductive structure 100 and the heat sink 300. At this time, the thermal conductive structure 100 and the heating element 200 can be connected by a glue layer, which solves the problem of the chip temperature being too high due to the easy delamination between the thermal pad and the heat sink.

[0122] Among them, in the embodiment of the present application, since the heating element 200 generates heat during operation, when the heat-conducting structure 100 is located between the heating element 200 and the radiator 300, the temperature at the junction of the heating element 200 and the heat-conducting structure 100 is higher than the temperature at the junction between the heat-conducting structure 100 and the radiator 300, so the second organic material 22 in the heat-conducting structure 100 will first diffuse to the junction between the heating element 200 and the heat-conducting structure 100 when it is subjected to high temperature and diffuses outward, thereby ensuring that the second organic material 22 diffused outward forms an adhesive layer 221 at the junction between the heating element 200 and the heat-conducting structure 100. As the heat generated by the heating element 200 increases, the second organic material 22 diffuses between the radiator 300 and the heat-conducting structure 100, and the second organic material 22 diffused between the radiator 300 and the heat-conducting structure 100 forms an adhesive layer 221, and the adhesive layer 221 bonds the radiator 300 and the heat-conducting structure 100. Moreover, the more heat the heating element 200 generates, the more second organic material 22 diffuses outward, thus more bonding layers 221 are generated, making the bonding between the heating element 200 and the heat conducting structure 100 and between the heat sink 300 and the heat conducting structure 100 more secure.

[0123] In the embodiment of the present application, the second organic material 22 diffused outward can undergo a chemical reaction to form an adhesive layer 221 when a preset reaction condition is met. That is, the first organic material 22 generates an adhesive layer 221 through a chemical reaction between the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300. During the generation process of the adhesive layer 221, since the second organic material 22 contacts the surface of the heating element 200 and / or the radiator 300 facing the heat-conducting structure 100, a chemical bonding force is generated between the generated adhesive layer 221 and the surface of the heating element 200 and / or the radiator 300 facing the heat-conducting structure 100, so that the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300 are more tightly bonded and less likely to be delaminated. Moreover, the higher the temperature generated by the heating element 200, the more the second organic material 22 diffuses outward, so that the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300 are more firmly bonded.

[0124] It should be noted that the outward diffusion of the second organic material 22 specifically refers to the second organic material 22 passing through the first organic material 21 and moving outward.

[0125] Therefore, the heat-conducting structure 100 provided in the embodiment of the present application, when not under high temperature (for example, greater than or equal to 35° C.) or pressure, the second organic material 22 in the heat-conducting structure 100 is located inside the first organic material 21, and because the reaction conditions are not met, it is in a liquid or semi-solid state. When the heat-conducting structure 100 is applied between the heating element 200 and the radiator 300, and the heat-conducting structure 100 needs to be connected to the heating element 200 and the radiator 300, diffusion conditions are provided (for example, high temperature or applying pressure to the heat-conducting structure 100 through the heating element 200 and the radiator 300), so that the second organic material 22 in the heat-conducting structure 100 diffuses outward under high temperature or pressure, and the diffused second organic material 22 is located between the heat-conducting structure 100 and the heating element 200 and / or between the heating element 200 and the radiator 300.

[0126] When the reaction conditions are met, such as reaction conditions such as high temperature, moisture, metal surface and other accelerating factors, the diffused second organic material 22 will undergo a chemical reaction, and a bonding layer with chemical bonding force is formed at the junction between the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300. Compared with the prior art in which the thermal pad and the heating element 200 / the radiator 300 are directly bonded by the adhesive layer, in the embodiment of the present application, a chemical bonding force is formed at the junction between the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300, so that the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300 are closely connected through the generated bonding layer, and when the temperature changes, the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the radiator 300 are not easy to be delaminated.

[0127] In some examples, as the temperature of the heating element 200 increases, the second organic material 22 in the thermal conductive structure 100 will continue to diffuse outward to form an adhesive layer with chemical bonding force. Therefore, when the temperature changes, the connection between the thermal conductive structure 100 and the heating element 200 and the thermal conductive structure 100 and the heat sink 300 will become more secure.

[0128] Therefore, when the heat-conducting structure 100 provided in the embodiment of the present application is arranged between the heating element 200 and the heat sink 300, the purpose of generating chemical bonding force between the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the heat sink 300 is achieved, ensuring that the heat-conducting structure 100 and the surface of the heating element 200 / heat sink 300 maintain close contact, avoiding the problem of overheating of the heating element 200 caused by stratification at the interface between the heat-conducting structure 100 and the heating element 200 / heat sink 300 during use.

[0129] In addition, the second organic material 22 diffused outward can be filled in the local micropores or gaps between the thermal conductive structure 100 and the heating element 200 and / or the thermal conductive structure 100 and the heat sink 300, so as to improve the microscopic wettability of the thermal conductive structure 100, thereby reducing the interface contact thermal resistance, reducing the application thermal resistance of the thermal conductive structure 100, and improving the thermal conductivity of the thermal conductive structure 100. Moreover, the second organic material 22 can be filled in the local micropores or gaps between the thermal conductive structure 100 and the heating element 200 and / or the thermal conductive structure 100 and the heat sink 300, so that the contact area between the generated adhesive layer 221 and the heating element 200 / heat sink 300 is increased, and the bonding force is greater.

[0130] It should be noted that, since the second organic material 22 is dispersed in the first organic material 21, the second organic material 22 diffused outward is locally distributed on the surface of the heat-conducting structure 100 in the form of particles or dots, for example Figure 3 As shown, partial areas of both sides of the heat-conducting structure 100 have the second organic material 22 diffused outward, so a plurality of adhesive layers 221 distributed at intervals are formed between the heat-conducting structure 100 and the heating element 200 and the heat sink 300 (that is, the adhesive layer does not cover the entire surface of the heat-conducting structure 100). Of course, in some other examples, the second organic material 22 diffused outward exists on the entire surface of the heat-conducting structure 100, so the formed adhesive layer completely covers one side of the heat-conducting structure 100. It should be noted that, Figure 4 In order to illustrate that the adhesive layer 221 formed is granular or dot-shaped, Figure 4 There is a gap between the heating element 200 and the heat sink 300 and the two surfaces of the thermal conductive structure 100, but in an actual product, the heating element 200 and the heat sink 300 are in close contact with the thermal conductive structure 100, and there is no gap.

[0131] It should be noted that in the embodiment of the present application, the preset temperature may be greater than or equal to 35° C., and the preset pressure may be greater than or equal to psi. For example, the preset pressure may be greater than or equal to 5 psi and less than or equal to 150 psi. For example, the preset pressure may be 10 to 60 psi. Alternatively, the preset pressure may be 50 psi.

[0132] It should be noted that when the second organic material 22 in the heat-conducting structure 100 diffuses outward under pressure, the first organic material 21 needs to form a solid substance with elasticity after solidification, and the heat-conducting film 10 is a compressible heat-conducting film 10. In this way, the heat-conducting structure 100 is compressible, the heat-conducting structure 100 is compressed under pressure, and the second organic material 22 can diffuse outward under compression. After the pressure is removed, the heat-conducting film 10 and the solid substance after solidification of the first organic material 21 can return to the original state.

[0133] It should be noted that the thickness of the diffused second organic material 22 is often at the nanometer level, so the formed bonding layer 221 is a molecular level adhesive. The molecular level adhesive means that the expanded second organic material 22 is a single molecule or a few molecular layers thick on the surface of the thermal conductive structure 100 and can form a chemical bond with the contact surface. For example, the thickness of the bonding layer is less than 1 μm.

[0134] In the embodiment of the present application, it should be noted that the first organic material 21 is generally solid after being cured, and the second organic material 22 diffuses outward from the molecular gaps of the solid-state material after the first organic material 21 is cured under high temperature or pressure. In order to facilitate the diffusion of the second organic material 22, the first organic material 21 can be made of a material with a low cross-linking density and a large mesh in the molecular chain grid structure, so that the gaps between molecules in the first organic material 21 after being cured are relatively large, and the second organic material 22 (for example, a small molecule material) can be easily moved inside the first organic material 21 after being cured to achieve the purpose of outward diffusion.

[0135] In the embodiment of the present application, the outwardly diffused second organic material 22 forms an adhesive layer 221 having van der Waals force, chemical bond force or bite force at least between the heat conductive structure 100 and the heating element 200 and / or between the heat conductive structure 100 and the heat sink 300 . For example, after the second organic material 22 diffuses outward, an adhesive layer 221 is formed between the heat-conducting structure 100 and the heating element 200, and during the generation process of the adhesive layer 221, a Van der Waals force, a chemical bond force, or a bite force is formed at the junction between the heat-conducting structure 100 and the heating element 200, thereby achieving the purpose of generating a chemical bonding force between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300. Moreover, the higher the temperature of the heating element 200, the more the second organic material 22 in the heat-conducting structure 100 diffuses outward, so that the bonding force between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300 is greater, thereby avoiding the problem of stratification between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300 due to excessively high temperature.

[0136] Alternatively, after the second organic material 22 diffuses outward, an adhesive layer 221 is formed between the thermally conductive structure 100 and the heat sink 300, and during the formation of the adhesive layer 221, a Van der Waals force, a chemical bond force, or a bite force is formed at the junction between the thermally conductive structure 100 and the heating element 200, thereby achieving the purpose of generating a chemical bond force between the thermally conductive structure 100 and the heat sink 300, and avoiding the problem of stratification between the thermally conductive structure 100 and the heat sink 300 due to excessively high temperature.

[0137] Alternatively, after the second organic material 22 diffuses outward, an adhesive layer 221 is formed between the thermally conductive structure 100 and the heat sink 300, and between the thermally conductive structure 100 and the heat sink 300. During the formation of the adhesive layer 221, chemical bonding forces such as van der Waals forces, chemical bond bonding forces or bite forces are formed at the joints between the thermally conductive structure 100 and the heating element 200, and between the thermally conductive structure 100 and the heat sink 300, so that stratification is not likely to occur between the thermally conductive structure 100 and the heating element 200, and between the thermally conductive structure 100 and the heat sink 300.

[0138] Among them, the bite force is specifically that the second organic material 22 diffuses outwardly into the uneven micropores or tiny gaps on the side of the heating element 200 facing the heat conducting structure 100 and / or the side of the heat sink 300 facing the heat conducting structure 100, so that a mutual bite mechanical bonding force is formed between the generated adhesive layer 221 and the side of the heating element 200 facing the heat conducting structure 100 and / or the side of the heat sink 300 facing the heat conducting structure 100.

[0139] The van der Waals force is an intermolecular bonding force generated between the molecules in the outwardly diffused second organic material 22 and a side of the heat-generating element 200 facing the heat-conducting structure 100 and / or a side of the heat sink 300 facing the heat-conducting structure 100 .

[0140] The chemical bonding force is a chemical bonding force formed by chemical reactions between molecules in the outwardly diffused second organic material 22 and molecules on a side of the heating element 200 facing the heat conducting structure 100 and / or on a side of the heat sink 300 facing the heat conducting structure 100 to form chemical bonds.

[0141] In the embodiment of the present application, at a preset temperature or a preset pressure, the second organic material 22 diffuses through the body of the first organic material 21. The body of the first organic material 21 refers to the material remaining after the second organic material 22 is removed from the dielectric layer 20. The molecular structure of the first organic material 21 may be a grid structure, and at the preset temperature or the preset pressure, the molecules of the second organic material 22 diffuse through the grid structure.

[0142] In a possible implementation, the first organic material 21 is in a solid state or a semi-solid state, and the second organic material 22 is in a liquid state or a semi-solid state. For example, when the first organic material 21 is in a solid state, the second organic material 22 is in a liquid state, so that the second organic material 22 can flow under high temperature or pressure, thereby facilitating the diffusion outward from the first organic material 21. Alternatively, when the first organic material 21 is in a solid state, the second organic material 22 is in a semi-solid state, or the first organic material 21 can be in a semi-solid state, and the second organic material 22 is in a liquid state, so that the second organic material 22 can also flow in the first organic material 21, thereby achieving the diffusion of the second organic material 22 outward.

[0143] Of course, in some other examples, the first organic material 21 may be in a gel state, and the second organic material 22 may be in a gel state, for example, the first organic material 21 may be in a gel state, and the second organic material 22 may be in a semisolid state, or the first organic material 21 may be in a semisolid state, and the second organic material 22 may be in a gel state.

[0144] In some examples, the second organic material 22 may also be an organic material that can undergo a phase change, so that when the preset temperature is not reached, for example, at a low temperature, the second organic material 22 is solid, and at a high temperature (for example, 40-105°C) it becomes liquid and diffuses outward through the first organic material 21 under temperature or pressure.

[0145] In a possible implementation, the bonding force between the adhesive layer 221 and the heat sink 300, and / or the bonding force between the adhesive layer 221 and the heating element 200 are both greater than the cohesive force of the dielectric layer 20 (cohesive force refers to the destructive strength of the organic material when resisting tensile deformation after curing). For example, the bonding force between the adhesive layer 221 and the heat sink 300 is greater than the cohesive force of the dielectric layer 20, or the bonding force between the adhesive layer 221 and the heating element 200 is greater than the cohesive force of the dielectric layer 20, or the bonding force between the adhesive layer 221 and the heat sink 300 and the bonding force between the adhesive layer 221 and the heating element 200 are both greater than the cohesive force of the dielectric layer 20. This ensures that even if the thermal conductive structure 100 is stretched and damaged, the thermal conductive structure 100 and the heating element 200 / heat sink 300 remain bonded, thereby ensuring that there is a strong bonding force between the thermal conductive structure 100 and the heating element 200 / heat sink 300 and avoiding the problem of delamination between the thermal conductive structure 100 and the heating element 200 / heat sink 300.

[0146] In the embodiment of the present application, the second organic material 22 is a material that undergoes a dehydration condensation reaction or a polymerization reaction with the heating element 200 and / or with at least a portion of the outer surface of the heat sink 300 facing the heat conducting structure 100 under preset reaction conditions, that is, the second organic material 22 can undergo a dehydration condensation reaction or a polymerization reaction between the heating structure 200 and the heat conducting structure 100 and / or the heat sink 300 and the heat conducting structure 100 when the preset reaction conditions are met.

[0147] The following describes in detail how the second organic material 22 can undergo a dehydration condensation reaction between the heat generating structure 200 and the heat conducting structure 100 and / or between the heat sink 300 and the heat conducting structure 100 under preset reaction conditions.

[0148] The preset reaction conditions may include: reaction temperature, reaction humidity or reaction medium, wherein the reaction temperature may be, for example, greater than or equal to 35°C, and the reaction humidity may be greater than or equal to 10% (i.e., there is moisture during the reaction). The reaction medium is the surface material that the second organic material 22 contacts when reacting. In the embodiment of the present application, the reaction medium may be a metal material, i.e., the surface that the second organic material 22 contacts when reacting is a metal surface, and the metal surface usually has hydroxyl groups (the metal surface is oxidized in the air to generate metal oxides, and the metal oxides react with water vapor in the air to generate hydroxyl groups), so a chemical bond can be formed between the hydroxyl groups and the second organic material 22.

[0149] In the embodiment of the present application, the surfaces of the heating element 200 and the heat sink 300 are often metal surfaces, so when the second organic material 22 diffuses between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300, the metal surfaces of the heating element 200 and the heat sink 300 provide reaction conditions for the second organic material 22 to chemically react. The second organic material 22 chemically reacts on the metal surfaces of the heating element 200 and the heat sink 300 and forms chemical bonds, so that a chemical bond bonding force is generated between the heat-conducting structure 100 and the interface between the heating element 200 / heat sink 300, thereby improving the current situation in which there is no chemical bond bonding at the interface between the existing thermal pad and the heating element 200 / heat sink 300, resulting in a relatively low adhesion force.

[0150] In the embodiment of the present application, in order to achieve a dehydration condensation reaction of the second organic material 22, the second organic material 22 may include a liquid material containing an active hydroxyl group and a liquid material containing a hydrolyzable group, that is, the second organic material 22 is in a liquid state. The liquid material containing a hydrolyzable group in the second organic material 22 provides a hydrolyzable group, and the hydrolyzable group undergoes a hydrolysis reaction to obtain a hydroxyl group. After the hydroxyl group reaches sufficient activity, the second organic material 22 undergoes a dehydration condensation reaction under accelerating factors such as high temperature, moisture or metal surface to form an adhesive layer 221.

[0151] In the process of forming the bonding layer 221, a chemical bond is formed between the heat-conducting structure 100 and the heating element 200 / heat sink 300 (the surface of the heating element 200 / heat sink 300 is a metal surface). When the heating element 200 is a chip, the chip surface has hydroxyl groups, which can form a chemical bond with the second organic material 22. The metal surface of the heat sink 300 and the second organic material 22 are chemically bonded, and the metal surface of the heat sink 300 and the formed bonding layer 221 form an interface bonding similar to a chelation effect. Therefore, a chemical bonding force is formed between the heat-conducting structure 100 and the heating element 200 and the heat sink 300, and the bonding is more reliable and less likely to delaminate.

[0152] In a possible implementation, the liquid material containing active hydroxyl groups may be a polyol, which is an alcohol containing two or more hydroxyl groups in a molecule, and has a general formula of C n H 2n +2-x(OH)x(x≥3). The liquid material containing a hydrolyzable group may be a silane coupling agent.

[0153] The polyol may be at least one of butanetriol, pentaerythritol, glycerol, trimethylolethane, xylitol or sorbitol, for example, the polyol is butanetriol, and the butanetriol may be 1,2,4-butanetriol. The silane coupling agent may be trialkoxysilane, or the silane coupling agent may be octyltriethoxysilane.

[0154] Among them, when the first organic material 21 includes butanetriol and octyltriethoxysilane, 0.5 parts of butanetriol and 0.3 parts of octyltriethoxysilane can be selected and mixed to obtain the second organic material 22. Of course, in some other examples, when butanetriol and octyltriethoxysilane are mixed, the selected parts include but are not limited to 0.5 parts and 0.3 parts.

[0155] In a possible implementation, the first organic material 21 may be polysilicone oil containing at least unsaturated siloxane, so that the first organic material 21 contains unsaturated bonds, and the reactive functional groups can be activated by heating or light, so that the unsaturated bonds undergo addition polymerization to achieve curing.

[0156] It should be noted that in order to prevent the second organic material 22 from diffusing outward at high temperature during the heating and curing process of the first organic material 21, in an embodiment of the present application, the temperature for heating and curing the first organic material 21 can be lower than the temperature required for the second organic material 22 to diffuse outward, or the first organic material 21 and the second organic material 22 can use different curing methods, for example, the first organic material 21 is cured by UV light.

[0157] In a possible implementation, the polysilicone oil containing unsaturated siloxane may be vinyl silicone oil. To achieve addition polymerization, the first organic material 21 further includes hydrogenated silicone oil, and the molecular weights of the vinyl silicone oil and the hydrogenated silicone oil are both less than 15,000. To accelerate the curing reaction, a catalyst may be selected, and the catalyst may be a Pt-based catalyst. The molecular formula of the vinyl silicone oil may be the following molecular formula (1):

[0158]

[0159] The hydrogen-containing silicone oil includes at least one of terminal hydrogen silicone oil and side hydrogen silicone oil. In the embodiment of the present application, the hydrogen-containing silicone oil adopts terminal hydrogen silicone oil, and the molecular formula of the terminal hydrogen silicone oil can be the following molecular formula (2):

[0160]

[0161] The first organic material 21 undergoes the following addition reaction during the curing process:

[0162]

[0163] The viscosity of the vinyl silicone oil and the terminal hydrogen silicone oil can be selected from 50 to 10000 cps (1 cps = 1 mPa·s). For example, the vinyl silicone oil can be selected from vinyl silicone oil with a viscosity of 50 mPa·s, and the terminal hydrogen silicone oil can be selected from terminal hydrogen silicone oil with a viscosity of 50 mPa·s. When configuring, 50 parts of vinyl silicone oil, 40 parts of terminal hydrogen silicone oil and a trace amount of catalyst can be mixed evenly, and heated and cured at 120 degrees for 30 minutes to form an organic silicone elastic adhesive material, that is, the first organic material 21, and the organic silicone elastic adhesive material bonds the thermal conductive film 10.

[0164] It should be noted that when the second organic material 22 is mixed in the first organic material 21, the second organic material 22 needs to be added to the first organic material 21 for mixing before the first organic material 21 is cured. In addition, the first organic material 21 and the second organic material 22 have different curing methods, so that the second organic material 22 does not participate in the curing of the first organic material 21 during the curing process of the first organic material 21. In this way, after the first organic material 21 is cured, the second organic material 22 can still maintain liquid fluidity, and the second organic material 22 can diffuse outward under high temperature or pressure.

[0165] In another possible implementation, the hydrogen-containing silicone oil includes terminal hydrogen silicone oil and side hydrogen silicone oil, that is, the first organic material 21 may include vinyl silicone oil, a catalyst, terminal hydrogen silicone oil and side hydrogen silicone oil, wherein the terminal hydrogen silicone oil may be selected from the above molecular formula (2) and the side hydrogen silicone oil may be selected from the viscosity of 200 mPa·s and the molecular formula may be selected from the following molecular formula (3):

[0166]

[0167] The vinyl silicone oil (1), terminal hydrogen silicone oil (2) and side hydrogen silicone oil (3) in the first organic material 21 undergo the following steps during the curing process: Fig.12 The addition reaction shown, where Fig.12 In the addition reaction shown in the figure, (1) represents the molecular formula (1), i.e., vinyl silicone oil, (2) represents the molecular formula (2), i.e., terminal hydrogen silicone oil, and (3) represents the molecular formula (3), i.e., hydrogen-containing silicone oil.

[0168] In a possible implementation, when the second organic material 22 is mixed in the first organic material 21, the weight percentage of the second organic material 22 in the first organic material 21 is less than 50%. For example, when configuring the organic materials, the first organic material 21 can be selected to be 100 parts and the second organic material 22 can be less than 50 parts, thereby ensuring that the weight percentage of the second organic material 22 in the first organic material 21 is less than 50%. For example, the weight percentage of the second organic material 22 in the first organic material 21 can be less than 25%, or the weight percentage of the second organic material 22 in the first organic material 21 can be less than 10%, thereby ensuring that the compressibility and resilience of the thermal conductive structure 100 are above 50% after the first organic material 21 is cured.

[0169] In a possible implementation, the second organic material 22 diffused outward accounts for less than or equal to 50% by weight of the dielectric layer 20. For example, the second organic material 22 diffused outward may account for 10% by weight of the dielectric layer 20. The amount of the second organic material 22 diffused outward may be achieved by controlling temperature or pressure.

[0170] In a possible implementation, the thickness H of the heat conducting structure 100 (see Figure 2 For example, the thickness H of the heat conductive structure 100 may be 0.1 mm, or the thickness H of the heat conductive structure 100 may be 2 mm, or the thickness H of the heat conductive structure 100 may be any value in the range of 0.2 to 0.5 mm.

[0171] In a possible implementation, the thermal conductivity of the heat-conducting structure 100 in the first direction is greater than the thermal conductivity of the heat-conducting structure 100 in the second direction, and the thermal conductivity of the heat-conducting structure 100 in the third direction is greater than the thermal conductivity of the heat-conducting structure 100 in the second direction. The first direction is a direction perpendicular to the side of the heating element 200 or the heat sink 300 facing the heat-conducting structure 100. In some examples, since the side of the heating element 200 or the heat sink 300 facing the heat-conducting structure 100 is often non-planar, in the embodiment of the present application, the first direction can specifically be a direction perpendicular to the orthographic projection of the side of the heating element 200 or the heat sink 300 facing the heat-conducting structure 100. For example, the first direction can be Figure 1 The second direction is a direction perpendicular to the side of the thermal conductive film 10 facing the dielectric layer 20. In some examples, the side of the thermal conductive film 10 facing the dielectric layer 20 is an inclined surface or a non-vertical surface. Therefore, in this embodiment, the second direction can be a direction perpendicular to the orthographic projection of the side of the thermal conductive film 10 facing the dielectric layer 20. For example, the second direction can be Figure 1The third direction is a direction perpendicular to both the first direction and the second direction. For example, the third direction may be Figure 1 In this way, when the heating element 200 and the heat sink 300 are located on both sides of the heat-conducting structure 100 along the first direction (i.e., the Z direction), since the thermal conductivity of the heat-conducting structure 100 in the first direction is relatively large, it is ensured that the heat-conducting structure 100 quickly transfers the heat generated by the heating element 200 to the heat sink 300, thereby achieving the purpose of quickly dissipating the heat of the heating element 200. Among them, the thermal conductivity of the heat-conducting structure 100 in the first direction is equivalent to the thermal conductivity in the third direction, so the heating element 200 and the heat sink 300 can also be located on both sides of the heat-conducting structure 100 along the third direction (i.e., the Y direction). Since the thermal conductivity of the heat-conducting structure 100 in the third direction is relatively large, the purpose of quickly dissipating the heat of the heating element 200 in the third direction is achieved.

[0172] In a possible implementation, the thermal conductivity of the heat-conducting structure 100 in the first direction is greater than or equal to 35 W / mk. For example, the thermal conductivity of the heat-conducting structure 100 in the first direction may be 50 W / mk.

[0173] The ratio of the thermal conductivity of the heat-conducting structure 100 in the first direction to the thermal conductivity of the heat-conducting structure 100 in the second direction is greater than or equal to 5. For example, the ratio of the thermal conductivity of the heat-conducting structure 100 in the first direction to the thermal conductivity of the heat-conducting structure 100 in the second direction can be any value in the range of 10-40.

[0174] In a possible implementation, the thickness of each heat-conducting film 10 may be the same, so that the two ends of the multiple heat-conducting films 10 are respectively located in the same plane, so that when the heat-conducting structure 100 contacts the surface of the heating element 200 and the heat sink 300, the distance between the two ends of each heat-conducting film 10 and the heating element 200 and the heat sink 300 is the same, ensuring that the heat-conducting structure 100 achieves uniform heat conduction to the heating element 200. Of course, in some other examples, the thickness of each heat-conducting film 10 may also be different.

[0175] The thickness L of each thermally conductive film 10 (see Figure 2 ) is greater than or equal to 7 μm and less than or equal to 200 μm. For example, the thickness L of the thermal conductive film 10 may be 50 μm, or the thickness L of the thermal conductive film 10 may be 100 μm. In practical applications, the thickness L of the thermal conductive film 10 is selected to be 15 μm to 50 μm.

[0176] In a possible implementation, when the density of the thermally conductive film 10 is 1.95-2.05 g / cm 3When the heat conductive film 10 is compressed, the heat conductive film 10 is often incompressible. In the embodiment of the present application, in order to achieve the purpose of the second organic material 22 diffusing outward under pressure in the heat conductive structure 100, the heat conductive film 10 is compressible, and the density of the heat conductive film 10 can be 1.2-1.95 g / cm 3 For example, the density of the thermally conductive film 10 may be 1.5 g / cm 3 , or the density of the thermally conductive film 10 can be 1.8 g / cm 3 In actual use, the density of the thermal conductive film 10 is 1.5-1.8 g / cm 3 By selecting a density of 1.2 to 1.95 g / cm 3 The thermally conductive film 10 is made compressible, so that the second organic material 22 can diffuse outward when being squeezed by the pressure of the thermally conductive film 10.

[0177] In a possible implementation, the thermally conductive film 10 can be a graphene film, which is compressible. After being made into a thermally conductive structure 100, when the thermally conductive structure 100 is subjected to compressive stress, the stress can be transmitted to the internal graphene film, and the stress can be absorbed by the compression deformation of the graphene film, which can reduce the compressive stress. And after the thermally conductive structure 100 is compressed, the plane size of the thermally conductive structure 100 does not expand significantly, and the density of the corresponding thermally conductive structure 100 increases. In the prior art, the thermally conductive fillers are all solid, and the manufactured thermally conductive pads will expand significantly on the four sides after compression, that is, because the density remains unchanged, the thickness of the thermally conductive pad becomes thinner after compression, and the size becomes larger at the same time. However, after the thermally conductive structure 100 provided in the embodiment of the present application is compressed and thinned, the actual density of the thermally conductive structure 100 increases, and the size of the thermally conductive pad does not increase significantly.

[0178] The graphene film is a film layer composed of multiple layers of graphene stacked together. For example, the graphene film can be made of graphene microsheets with a thickness of nanometers as raw materials.

[0179] When the thermally conductive film 10 is a graphene film, the thickness of the graphene film can be greater than or equal to 15 μm and less than or equal to 50 μm. The intervals between the plurality of thermally conductive films 10 can vary from nanometers to micrometers, so that when the dielectric layer 20 is filled between two adjacent thermally conductive films 10, the thickness D (see Figure 2 The thickness D of the dielectric layer 20 formed between two adjacent thermally conductive films 10 can be less than 1 μm in order to achieve a higher thermal conductivity. The thickness of the dielectric layer 20 can be controlled by the viscosity of the first organic material 21 and the lamination pressure during the manufacturing process. In actual situations, the vertically arranged graphene films are usually irregularly twisted, that is, the thickness of the dielectric layer 20 is uneven.

[0180] Wherein, when the thermal conductive film 10 is a graphene film, the graphene film can be made of a single-layer graphene microsheet or a few-layer graphene microsheet (few layers usually refer to less than 10 layers), and is microscopically composed of multiple layers of graphene microsheets stacked. The stacking method of the multi-layer graphene microsheets is usually a non-AB stacking method. AB stacking refers to the upper graphene microsheet and the lower graphene microsheet are stacked in a staggered arrangement to form a graphene film, and the non-AB stacking method refers to the upper graphene microsheet and the lower graphene microsheet are non-staggered to form a graphene film.

[0181] For example, a graphene film can be prepared in the following manner: using a single-layer graphene oxide microflake with a D50 size of 20 μm (i.e., the longitudinal dimension of the graphene microflake is 20 μm), wherein D50 refers to the particle size corresponding to when the cumulative particle size distribution percentage of the graphene microflake reaches 50%, 500 mg of a single-layer graphene oxide microflake is weighed and dispersed in 20 ml of deionized water to form a solution. The graphene oxide aqueous solution is coated on a substrate with a width of 100 mm (e.g., a high-temperature resistant graphite film) to obtain a graphene oxide film with a width of 100 mm and a thickness of about 25 μm. The graphene oxide film is placed in an oven and dried at 60°C for 24 hours. The dried graphene oxide film is placed in a high-temperature graphitization furnace, and argon gas is introduced as a protective gas with a flow rate of 100 cm 3 / min, and calcined at 2600℃ for 20min to perform high temperature reduction reaction. After the reduction reaction is completed, the temperature is naturally cooled to room temperature, and the density of the graphene thermal conductive film 10 is controlled to be about 1.6g / cm by the pressing pressure. 3 The planar thermal conductivity of the graphene film tested by the laser flash method is 1100 W / mk and the thickness is 20 μm.

[0182] In the embodiment of the present application, a 20 μm thick, 100 mm × 100 mm thick, and a density of 1.6 g / cm 3 Graphene films with a thermal conductivity of 1100 W / mk are arranged vertically as thermal conductive films 10. A 0.2 mm × 30 mm × 30 mm thermal conductive structure 100 is manufactured with reference to the above organic material formula. Using the ASTM D 5470 method, the thermal resistance of the thermal conductive pad at 40 psi is measured by Taiwan Ruiling LW9389 equipment to be 0.07 °C-cm 2 / W. The thermal resistance at different thicknesses was tested and it was calculated that the contact thermal resistance of the thermal conductive structure 100 was only 0.03 to 0.035°C-cm 2 / W. The compressibility of the heat-conducting structure 100 was tested using a universal mechanical testing machine, and the compression amount could reach 50% at 40 psi.

[0183] The above 0.2mm×30mm×30mm thermal pad is attached to a chip with a bare chip size of 30×30mm. This chip is exposed bare chip, with a package size of 55×55mm and a typical working heat consumption of 300W. The heat sink 300 is mounted on the chip using spring screws. The fastening force of the heat sink 300 is 40psi. The screw fastening of the heat sink 300 and the single board where the chip is located is completed. The surface temperature of the chip is 100 degrees through the fan speed control method. After working continuously for 500 hours, the heat sink 300 is disassembled. It can be found that the size of the thermal pad has no significant change, and the size increase is within the range of 2mm on one side. After disassembling the heat sink 300, the thermal conductive structure 100 is in a cohesive failure state. There are partial thermal conductive pads on both sides of the heat sink 300 and the chip, and point-shaped organic matter can be observed in the local position of the chip and the heat sink 300. Therefore, the second organic material 22 system extends to the interface between the thermal conductive structure 100 and the heat dissipation contact surface, forming a local chemical bond. The adhesion force between the second organic material 22 system and the heat dissipation contact surface is greater than the cohesive force of the first organic material 21 system, that is, the adhesion force between the adhesive layer 221 and the heat sink 300 and between the adhesive layer 221 and the chip is greater than the cohesive force of the first organic material 21 after curing. Therefore, when the heat sink 300 is disassembled, the heat sink 300 has a dot-shaped adhesive layer 221, and the thermal conductive structure 100 suffers from cohesive failure.

[0184] Therefore, the heat-conducting structure 100 provided in the embodiment of the present application achieves lower contact thermal resistance (reduced by more than 50%), maintains reliable contact between the heat-conducting structure 100 and the heat-dissipating contact surface when the gap changes, and avoids the problem of interface stratification of the heat-conducting structure 100 causing overheating of the heating element 200. In addition, by using a compressible graphene film, the size of the heat-conducting structure 100 does not expand significantly after compression. The problem of short circuit caused by the expansion of the size of the heat-conducting structure 100 overflowing to the edge of the heating element 200 (such as a chip) can be avoided, and the heat-conducting structure 100 achieves ultra-low application thermal resistance, which is more than doubled compared with the existing optimal thermal pad.

[0185] Alternatively, in another possible implementation, the thermally conductive film 10 may also be a graphite film, for example, an artificial graphite film. The artificial graphite film is composed of multiple layers of graphene stacked in an AB stacking manner (AB stacking refers to the stacking of upper graphene microsheets and lower graphene microsheets in an offset arrangement). The artificial graphite film uses polyimide film as a raw material, and is subjected to high-temperature graphitization under compression to achieve an incompressible thermally conductive film 10, and the density of the thermally conductive film 10 may be greater than or equal to 2.0 g / cm 3 And less than or equal to 2.1g / cm 3 .

[0186] When the thermal conductive film 10 is a graphite film, a thicker graphite film is prone to internal cracking when placed vertically under pressure, so a thinner graphite film is required. Therefore, the thickness of the graphite film is less than or equal to 25 μm, for example, the thickness of the graphite film can be less than or equal to 17 μm. The density of the graphite film can be greater than or equal to 1.51.9 g / cm 3 And less than or equal to 1.9g / cm 3 , the density can be controlled by adjusting the pressing process conditions.

[0187] In the embodiment of the present application, the thickness is 12 μm and the density is 1.75 g / cm 3 , a graphite film with a planar thermal conductivity of 1100W / mk is used as a raw material for vertical arrangement. Referring to the above organic material formula (i.e., the first organic material 21 is composed of vinyl silicone oil, terminal hydrogen silicone oil and side hydrogen silicone oil, and the second organic material 22 is composed of butanetriol and octyltriethoxysilane) and its process, a 0.2mm×30mm×30mm thermal conductive structure 100 is made. The thermal resistance of the thermal conductive structure 100 at 40psi is measured by Taiwan Ruiling LW9389 equipment to be 0.08℃-cm 2 / W. The compressibility of the thermal conductive structure 100 was tested using a universal mechanical testing machine, and the compression amount reached 35% at 40 psi.

[0188] In one possible implementation, Figure 5 As shown, each thermally conductive film 10 is inclined. For example, one side of the thermally conductive film 10 facing the dielectric layer 20 is inclined in the thickness direction of the thermally conductive structure 100 (ie, Figure 5 The angle a formed between the side of the heat conductive film 10 facing the dielectric layer 20 and the thickness direction of the heat conductive structure 100 is greater than 0° and less than or equal to 45°. For example, the angle a formed between the side of the heat conductive film 10 facing the dielectric layer 20 and the thickness direction of the heat conductive structure 100 may be 30°. Alternatively, in some examples, when the heat conductive films 10 and the dielectric layers 20 are alternately arranged, the dielectric layer 20 is located between two adjacent heat conductive films 10, so that the side of the heat conductive film 10 facing the dielectric layer 20 and the side of the heat conductive film 10 facing away from the dielectric layer 20 form an angle a greater than 0° and less than or equal to 45° with the thickness direction of the heat conductive structure 100.

[0189] By setting the thermal conductive film 10 to be inclined, the thermal conductive film 10 is compressed and deformed to absorb stress, thereby significantly reducing the compressive stress of the thermal conductive structure 100, so that when the thermal conductive structure 100 is compressed by external force, the plane size of the thermal conductive structure 100 does not expand significantly, thereby avoiding the risk of short circuit caused by the expansion of the size of the thermal conductive structure 100. The design of the thermal conductive film 10 being inclined can be achieved by a cutting process.

[0190] Embodiment 2

[0191] The difference from the above embodiment is that in the embodiment of the present application, the second organic material 22 is a material that can undergo a polymerization reaction between the heating structure 200 and the heat-conducting structure 100 and / or between the heat-conducting structure 100 and the heat sink 300 under preset reaction conditions. Moreover, the adhesive layer 221 formed after the second organic material 22 undergoes a polymerization reaction has a pressure-sensitive property. That is, the generated adhesive layer 221 is an adhesive that is sensitive to pressure, so that by applying pressure to the heating element 200 and the heat sink 300, the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the heat sink 300 are tightly bonded through the formed adhesive layer 221.

[0192] The polymerization reaction of the second organic material 22 between the heat-generating structure 200 and the heat-conducting structure 100 and / or between the heat-conducting structure 100 and the heat sink 300 will be described in detail below.

[0193] In order to achieve a polymerization reaction of the second organic material 22 when the reaction conditions are met, for example, the second organic material 22 may be an unsaturated acrylic material. The unsaturated acrylic material may undergo a polymerization reaction.

[0194] In the embodiment of the present application, the unsaturated acrylic material may be, for example, an acrylic material containing an ester functional group, or the unsaturated acrylic material may be an acrylic material containing a hydrophilic group. For example, the unsaturated acrylic material may also be an acrylic material containing a strongly hydrophilic group such as a carboxyl group or a hydroxyl group.

[0195] In an embodiment of the present application, the acrylic material containing an ester functional group may include: 2-ethylhexyl acrylate, 4-hydroxybutyl acrylate, that is, the second organic material 22 may be 2-ethylhexyl acrylate, or the second organic material 22 may be 4-hydroxybutyl acrylate, and 2-ethylhexyl acrylate is mixed in the first organic material 21.

[0196] In the embodiment of the present application, the first organic material 21 may be an organic chemical containing acrylic acid, polyurethane, epoxy or polyimide. For example, in the embodiment of the present application, the first organic material 21 may include 4-hydroxybutyl acrylate and divinyl adipate, and 4-hydroxybutyl acrylate and divinyl adipate undergo a curing reaction under the action of an initiator (such as a photoinitiator, a thermal initiator, etc.).

[0197] Therefore, in the embodiment of the present application, the first organic material 21 and the second organic material 22 are changed from silicone to acrylic system, so that the first organic material 21 after curing is in solid or gel state, so that the thermal conductive structure 100 is a flexible thermal conductive pad. And the second organic material 22 can diffuse to the outer surface of the thermal conductive structure 100 to polymerize to form a pressure-sensitive adhesive.

[0198] During configuration, the following can be selected: 60 parts of 4-hydroxybutyl acrylate, 25 parts of 2-ethylhexyl acrylate, 15 parts of divinyl adipate, 1 part of acetophenone photopolymerization initiator, and 0.02 parts of organic peroxide thermal initiator are mixed to form an organic slurry. The organic slurry is filled between two adjacent thermally conductive films 10 to form a dielectric layer 20 with a thickness of 5 μm. After UV light curing, the first organic material 21 becomes an adhesive with pressure-sensitive properties, and the adhesive bonds the thermally conductive films 10 to form an overall structure.

[0199] The reaction mechanism of free radical polymerization between monomers under UV light is as follows:

[0200]

[0201] In the mixed organic slurry of the first organic material 21 and the second organic material 22, part of the 2-ethylhexyl acrylate does not completely participate in the free radical polymerization reaction initiated under UV light (for example, the amount of 2-ethylhexyl acrylate is large, a part of it participates in the free radical polymerization reaction, and the remaining part of the 2-ethylhexyl acrylate is mixed in the first organic material 21). The 2-ethylhexyl acrylate components that do not participate in the polymerization reaction can expand to the surface of the heat-conducting structure 100 and the micropores of the heat-conducting structure 100 and the heat-dissipating contact surface under the action of pressure or high temperature. The 2-ethylhexyl acrylate that diffuses outward can undergo self-polymerization in the presence of high temperature and thermal initiator to form a pressure-sensitive adhesive layer 221, and the adhesive layer 221 forms a mutually interlocking bonding force with the metal surfaces of the heating element 200 and the radiator 300, so that the heat-conducting structure 100, the heating element 200 and the radiator 300 can achieve good tight adhesion.

[0202] Using the ASTM D 5470 method and Taiwan Ruiling LW9389 equipment, the thermal conductive structure with a thickness of 0.2mm was compressed to 0.18mm, and the test application thermal resistance was 0.17℃-cm 2 / W. Keeping the thickness of the thermal pad and other test conditions unchanged, the thermal resistance of the thermal pad was monitored for 168 hours. It can be observed that the application thermal resistance gradually decreases and can be reduced to 0.13℃-cm 2 / W. It shows that the contact thermal resistance of the heat-conducting structure 100 is significantly reduced under continuous pressure and high temperature. Therefore, the heat-conducting structure 100 provided by the present application forms an adhesive layer 221 with chemical bonding force through the outward diffusion of the second organic material 22 and polymerization reaction, and the second organic material 22 diffuses outward into the microscopic grooves on the surfaces of the heating element 200 and the heat sink 300, so that the heat-conducting structure 100 is in close contact with the heating element 200 and the heat sink 300, thereby reducing the contact thermal resistance of the heat-conducting structure 100, reducing the application thermal resistance of the heat-conducting structure 100, and improving the thermal conductivity of the heat-conducting structure 100.

[0203] It should be noted that in the embodiment of the present application, since the adhesive layer 221 has a pressure-sensitive property, even if cracks occur locally inside the thermal conductive structure 100, it still has an adhesive effect after the force is restored, and has a certain healing and recovery effect.

[0204] Embodiment 3

[0205] The present application also provides a method for manufacturing the heat-conducting structure 100. Figure 6 As shown, the method comprises the following steps:

[0206] S101, providing a plurality of thermally conductive films 10, each thermally conductive film 10 having a first surface 11 and a second surface 12 opposite to the first surface 11;

[0207] See also Fig. 7A As shown, four heat-conducting films 10 are provided. Of course, in some other examples, the number of the heat-conducting films 10 includes but is not limited to 4. The heat-conducting film 10 may be a graphene film or an artificial graphite film.

[0208] Wherein, when the thermal conductive film 10 is a graphene film, the preparation method is as follows: use a single-layer graphene oxide microflake with a D50 size of 20 μm (that is, the longitudinal size of the graphene microflake is 20 μm), weigh 500 mg of the single-layer graphene oxide microflake and disperse it in 20 ml of deionized water to prepare a solution. Coat the graphene oxide aqueous solution on a substrate with a width of 100 mm (such as a high-temperature resistant graphite film) to obtain a graphene oxide film with a width of 100 mm and a thickness of about 25 μm. Put the graphene oxide film in an oven and dry it at 60°C for 24 hours. Put the dried graphene oxide film into a high-temperature graphitization furnace, and introduce argon as a protective gas with a flow rate of 100 cm 3 / min, and calcined at 2600℃ for 20min to perform high temperature reduction reaction. After the reduction reaction is completed, the temperature is naturally cooled to room temperature, and the density of the graphene thermal conductive film 10 is controlled to be about 1.6g / cm by the pressing pressure. 3 The planar thermal conductivity of the graphene film tested by the laser flash method is 1100 W / mk and the thickness is 20 μm.

[0209] When the thermally conductive film 10 is an artificial graphite film, the manufacturing method is as follows: multiple layers of graphene are stacked in an AB stacking manner (AB stacking refers to the stacking of upper graphene microsheets and lower graphene microsheets in a staggered arrangement) to form an incompressible thermally conductive film 10, and the density of the thermally conductive film 10 can be greater than or equal to 2.0 g / cm 3 And less than or equal to 2.1g / cm 3 .

[0210] S102, forming a dielectric layer 20 on the first surface 11 and the second surface 12 of each thermal conductive film 10, wherein the dielectric layer 20 includes a first organic material 21 and a second organic material 22 located in the first organic material 21;

[0211] In the embodiment of the present application, the second organic material 22 can be mixed in the first organic material 21 to form an organic slurry, such as Figure 7B As shown, the organic slurry is coated on both sides of the thermal conductive film 10 to form the dielectric layer 20. The composition of the first organic material 21 and the second organic material 22 can refer to the above-mentioned embodiment 1 and embodiment 2, and will not be repeated in this embodiment.

[0212] S103, stacking and pressing a plurality of thermally conductive films 10 formed with dielectric layers 20 to form a block structure;

[0213] like Figure 7C As shown, four thermally conductive films 10 with dielectric layers 20 are stacked and pressed to form a block with a height of 100 mm and a size of 100×100 mm, and the block is cured under UV light or heated at 120° C. for 30 minutes. After the first organic material 21 is cured, a whole structure is formed between the plurality of thermally conductive films 10 and the dielectric layer 20. It should be noted that during the curing process of heating at 120° C. for 30 minutes, part of the second organic material 22 may diffuse outward at high temperature, but part of the second organic material 22 may still exist in the first organic material 21. In this way, the second organic material 22 exists in the first organic material 21 after curing, and the second organic material 22 may be in a liquid or semi-solid state.

[0214] S104 , cutting the block structure to obtain the thermal conductive structure 100 .

[0215] See also Fig.7D Therefore, the block structure obtained in step 103 can be cut, for example, into a thermal pad with a thickness of 0.2 mm. After step 104, the method further includes: polishing the 0.2 mm thermal pad and then cutting it into small pieces, such as 30×30 mm in size, to obtain a thermal conductive structure 100 of 0.2 mm×30 mm×30 mm (see FIG7E ).

[0216] In the embodiment of the present application, the block structure is cut to obtain the thermal conductive structure 100, including: cutting the block structure along a cutting direction and perpendicular to the direction of the thermal conductive film 10 (i.e. Fig.7D The direction of the solid arrow) and the cutting direction (i.e. Fig.7DThe angle is greater than or equal to 0° and less than or equal to 45°. That is, the thermally conductive film 10 in the thermally conductive structure 100 is inclined relative to the thickness direction of the thermally conductive structure 100 by the inclined cutting. As shown in FIG. 7D , the inclined cutting is performed along the dotted arrow. For example, the angle between the cutting direction and the direction perpendicular to the thermally conductive film 10 can be 5°. In the thermally conductive structure 100 obtained by cutting, the angle between the side of the thermally conductive film 10 facing the dielectric layer 20 and the thickness direction of the thermally conductive structure 100 is 5°.

[0217] In the embodiment of the present application, a dielectric layer 20 is formed on the first surface 11 and the second surface 12 of each thermally conductive film 10, including: providing a first organic material 21 and a second organic material 22, mixing the second organic material 22 in the first organic material 21 to form an organic slurry; and coating the organic slurry on the first surface 11 and the second surface 12 of each thermally conductive film 10 to form the dielectric layer 20.

[0218] Wherein, a first organic material 21 is provided, including:

[0219] Provide vinyl silicone oil, hydrogen-terminated silicone oil, hydrogen-containing silicone oil and a catalyst; for example, during preparation, 50 parts of vinyl silicone oil, 40 parts of hydrogen-terminated silicone oil and 10 parts of pendant hydrogen silicone oil may be provided, and the vinyl silicone oil, hydrogen-terminated silicone oil, pendant hydrogen silicone oil and the catalyst may be mixed to obtain the first organic material 21. The vinyl silicone oil, hydrogen-terminated silicone oil and pendant hydrogen silicone oil may have a viscosity of 50 to 10,000 cps, where 1 cps = 1 mPa·s, for example, vinyl silicone oil with a viscosity of 50 mPa·s, hydrogen-terminated silicone oil with a viscosity of 50 mPa·s and pendant hydrogen silicone oil with a viscosity of 200 mPa·s may be selected.

[0220] Providing the second organic material 22 includes providing butanetriol and octyltriethoxysilane, for example, providing 0.5 parts of butanetriol and 0.3 parts of octyltriethoxysilane. Mixing butanetriol and octyltriethoxysilane to obtain the second organic material 22. The first organic material 21 formed by butanetriol and octyltriethoxysilane can be mixed into the first organic material 21 by capsule.

[0221] Alternatively, in another possible implementation, a first organic material 21 and a second organic material 22 are provided to form an organic slurry, including: providing a first organic material 21, wherein the first organic material 21 includes 4-hydroxybutyl acrylate and divinyl adipate; providing a second organic material 22, wherein the second organic material 22 includes 2-ethylhexyl acrylate; providing an initiator, wherein the initiator includes a photopolymerization initiator and a thermal initiator; when combining, 50 parts of 4-hydroxybutyl acrylate, 15 parts of divinyl adipate, 25 parts of 2-ethylhexyl acrylate, 1 part of the photopolymerization initiator and 0.02 parts of the thermal initiator can be mixed to obtain the organic slurry.

[0222] Of course, in some other examples, the second organic material 22 can also be infiltrated and diffused into the first organic material 21 after the first organic material 21 is cured. For example, the first organic material 21 can be first cured to form a solid or gel-like substance, and then the second organic material 22 with a nanometer thickness is arranged on the first organic material 21 of the prepared thermal conductive structure 100, and the second organic material 22 can be infiltrated and diffused into the cured first organic material 21. It should be noted that when the second organic material 22 infiltrates and diffuses into the cured first organic material 21, the viscosity of the second organic material 22 needs to be low.

[0223] Embodiment 4

[0224] The embodiment of the present application also provides a heat conduction system, which may include a heating element 200 and a heat conduction structure described in any of the above embodiments, and the heat conduction structure is used to transfer heat from the heating element 200. By including the above heat conduction structure 100, the second organic material 22 in the heat conduction structure 100 diffuses outward to form an adhesive layer 221 with van der Waals force, chemical bond binding force or bite force between the heating element 200 and the heat conduction structure 100, and the adhesive layer 221 closely connects the heating element 200 and the heat conduction structure 100, thereby avoiding the problem of delamination between the heating element 200 and the heat conduction structure 100.

[0225] In a possible implementation, the heat conduction system further includes a heat sink 300, and the heat conduction structure 100 is located between the heating element 200 and the heat sink 300, and the heat conduction structure 100 is used to transfer heat from the heating element 200 to the heat sink 300. In this way, the second organic material 22 in the heat conduction structure 100 diffuses outward between the heating element 200 and the heat conduction structure 100, and between the heating element 200 and the heat sink 300 to form an adhesive layer 221 with van der Waals force, chemical bond binding force or bite force, and the adhesive layer 221 closely connects the heating element 200 and the heat conduction structure 100, and between the heat conduction structure 100 and the heat sink 300.

[0226] Embodiment 5

[0227] The present application embodiment also provides a chip packaging structure 400, such as Fig. 8A As shown, it at least includes: a chip 201 arranged on a packaging carrier 402 (for example, it can be a circuit board or a packaging board), a packaging heat dissipation cover 301 and any of the above-mentioned heat-conducting structures 100, and the heat-conducting structure 100 is located between the chip 201 and the packaging heat dissipation cover 301.

[0228] When the heat-conducting structure 100 is under a preset temperature or a preset pressure, the second organic material 22 in the heat-conducting structure 100 diffuses between the heat-conducting structure 100 and the chip 201 and / or between the heat-conducting structure 100 and the package heat-dissipating cover 301, and the second organic material 22 diffused outward undergoes a chemical reaction to form an adhesive layer 221, and the adhesive layer 221 connects the heat-conducting structure 100 and the chip 201 and / or the heat-conducting structure 100 and the package heat-dissipating cover 301.

[0229] By including the above-mentioned heat-conducting structure 100, an adhesive layer 221 is formed between the heat-conducting structure 100 and the chip 201 and / or between the heat-conducting structure 100 and the package heat-dissipating cover 301. During the generation process of the adhesive layer 221, a chemical bonding force is formed at the joint between the heat-conducting structure 100 and the chip 201 and / or between the heat-conducting structure 100 and the package heat-dissipating cover 301, ensuring that the heat-conducting structure 100 and the surface of the chip 201 / package heat-dissipating cover 301 are closely bonded, thereby avoiding the problem of overheating of the chip 201 caused by delamination at the interface between the heat-conducting structure 100 and the chip 201 / package heat-dissipating cover 301 during use. In addition, the second organic material 22 diffused outward can fill the local micropores between the heat-conducting structure 100 and the chip 201 and / or between the heat-conducting structure 100 and the package heat-dissipating cover 301, improve the microscopic wettability of the heat-conducting structure 100, thereby reducing the interface contact thermal resistance, reducing the application thermal resistance of the heat-conducting structure 100, and achieving the purpose of good heat dissipation of the chip 201.

[0230] In a possible implementation, it also includes: a fixed frame 401, the fixed frame 401 is located between the package carrier 402 and the package heat dissipation cover 301, and the fixed frame 401, the package carrier 402 and the package heat dissipation cover 301 form a package cavity, and the chip 201 and the heat-conducting structure 100 are located in the package cavity. For example, one end of the fixed frame 401 is connected to the package carrier 402, and the other end of the fixed frame 401 is connected to the package heat dissipation cover 301, and the inner surface of the fixed frame 401, the package carrier 402 and the package heat dissipation cover 301 forms a cavity. In this way, the heat generated by the chip 201 is transferred to the package heat dissipation cover 301 through the heat-conducting structure 100, so that the heat generated by the chip 201 in the cavity is transferred to the outside of the cavity, thereby achieving the heat dissipation effect on the chip 201. In the embodiment of the present application, the package heat dissipation cover 301 can be a package cover made of an aluminum plate.

[0231] In one possible implementation, see Fig. 8A As shown, the bottom end of the fixed frame 401 is connected to the packaging carrier 402 by clamping, welding or adhesive bonding, and the top end of the fixed frame 401 is fastened to the packaging heat dissipation cover 301 by an elastic fastener 405, that is, after the fixed frame 401 is connected to the packaging heat dissipation cover 301, there is a compressible margin between the fixed frame 401 and the packaging heat dissipation cover 301, so that after a force is applied to the packaging heat dissipation cover 301, pressure can be applied to the heat conductive structure 100, and under the action of pressure, the second organic material 22 of the heat conductive structure 100 diffuses outward and undergoes a chemical reaction to form an adhesive layer 221.

[0232] In the embodiment of the present application, the elastic fastener 405 can specifically be an elastic fastener such as an elastic clip or a spring screw. A plurality of threaded holes are provided on the fixed frame 401. For example, 8 threaded holes can be provided. 8 spring screws can be used in conjunction with the threaded holes to realize the connection between the packaged heat dissipation cover 301 and the fixed frame 401.

[0233] Of course, in some other examples, the fixing frame 401 and the packaging carrier 301 are fastened together, for example, the fixing frame 401 and the packaging carrier 301 are fastened together by means of screws, clamping or welding.

[0234] In another possible implementation, see Figure 8B As shown, the package heat dissipation cover 301 and the fixed frame 401 can be integrally formed, for example, the package heat dissipation cover 301 and the fixed frame 401 can be formed by stamping an aluminum plate. In this way, the cover body composed of the package heat dissipation cover 301 and the fixed frame 401 is connected to the package carrier 402 to form a cavity. The chip 201 and the package carrier 402 can be connected through the first pad 403, and the package carrier 402 is provided with a second pad 404 on the side facing away from the first pad. The chip 201 is connected to the circuit board through the first pad and the second pad 404. By setting the packaging heat dissipation cover 301 and the fixed frame 401 as one body, the packaging can be completed by connecting the packaging carrier 402 and the fixed frame 401 during packaging, thereby improving the packaging efficiency. Moreover, the fixed frame 401 and the packaging heat dissipation cover 301 are integrated, so there is no assembly gap between the fixed frame 401 and the packaging heat dissipation cover 301. Therefore, after the packaging is completed, it is prevented that water vapor enters the cavity surrounded by the packaging carrier 402, the packaging heat dissipation cover 301 and the fixed frame 402 through the assembly gap between the fixed frame 401 and the packaging heat dissipation cover 301 and affects the chip 201.

[0235] In the embodiment of the present application, the heat-conducting structure 100 can be selected to have a thickness of 0.1-0.4 mm. For example, a heat-conducting structure 100 with a thickness of 0.2 mm is selected and placed on a chip 201 with a bare chip size of 30×30 mm.

[0236] Embodiment 6

[0237] The embodiment of the present application also provides an electronic device, which may include but is not limited to a mobile phone, a tablet computer, a laptop computer, an ultra-mobile personal computer (UMPC), a handheld computer, a walkie-talkie, a netbook, a point of sale (POS), a personal digital assistant (PDA), a wearable device, a virtual reality device, a wireless USB flash drive, a Bluetooth speaker / headphone, or a mobile or fixed terminal with a heating element 200, such as a vehicle-mounted front-end device, a driving recorder, a security device, etc.

[0238] In a possible implementation, a mobile phone 500 is used as an example of the electronic device. The electronic device may include at least: the chip packaging structure 400 described in the fourth embodiment (see Fig.10 shown).

[0239] See also Fig. 9 and Fig.10 As shown, the electronic device may further include a display screen 501 and a back cover 502, the display screen 501 and the back cover 502 enclose a housing 510, the chip packaging structure 400 and the circuit board 520 are located in the housing 510, and the chip packaging structure 400 may be disposed on the circuit board 520 in the electronic device. For example, the packaging carrier 402 in the chip packaging structure 400 may be electrically connected to the circuit board 520 through the second pad 404, and the packaging heat dissipation cover 301 in the chip packaging structure 400 may be in contact with the housing 510 of the electronic device (for example, the inner surface 5021 of the back cover 502), so that the heat of the packaging heat dissipation cover 301 may be dissipated to the outside of the electronic device through the housing 510 of the electronic device, thereby achieving good heat dissipation of the chip 201 in the electronic device.

[0240] In another possible implementation, the electronic device provided in the embodiment of the present application is as follows: Fig. 9 and Fig.11 As shown, it at least includes: a housing 510, a heating element 200, a heat sink 300 and any of the above-mentioned heat-conducting structures 100 arranged in the housing 510, and the heat-conducting structure 100 is located between the heating element 200 and the heat sink 300. The heating element 200 can be a memory or a CPU, etc., or the heating element 200 can also be other electronic components that generate heat when working.

[0241] During installation, the heat-conducting structure 100 is arranged on the heating element 200, and the heat sink 300 is covered on the heat-conducting structure 100. The other end of the heat sink 300 can be in contact with the housing 510 of the electronic device. For example, the other end of the heat sink 300 can be in contact with the inner surface 5021 of the back cover 502, or when the electronic device has a middle frame, the heat sink 300 can be in contact with the middle frame. In this way, under high temperature or pressure, the second organic material 22 in the heat-conducting structure 100 diffuses between the heating element 200 and the heat-conducting structure 100 and / or the heat sink 300 and the heat-conducting structure 100. When the reaction conditions are met between the structures 100, the second organic material 22 undergoes a chemical reaction, so that an adhesive layer 221 having van der Waals force, chemical bond force or bite force is generated at the junction between the heating element 200 and the heat-conducting structure 100 and / or between the heat sink 300 and the heat-conducting structure 100, thereby ensuring that the heat-conducting structure 100 is in close contact with the surface of the heating element 200 / heat sink 300, thereby avoiding the problem of overheating of the heating element 200 due to stratification at the interface between the heat-conducting structure 100 and the heating element 200 / heat sink 300 during use.

[0242] In addition, the second organic material 22 diffused outward can be filled in the local micropores between the heat-conducting structure 100 and the heating element 200 and the heat-conducting structure 100 and the radiator 300, so as to improve the microscopic wettability of the heat-conducting structure 100, thereby reducing the interface contact thermal resistance and reducing the application thermal resistance of the heat-conducting structure 100. The heat generated by the heating element 200 in the electronic device is dissipated outward in time, and the over-high temperature of the heating element 200 is avoided, which causes the heating element 200 to fail to work normally. Moreover, the second organic material 22 diffused outward can be filled in the local micropores between the heat-conducting structure 100 and the heating element 200 and the heat-conducting structure 100 and the radiator 300, so that the contact area between the adhesive layer 221 formed and the heating element 200 / radiator 300 is increased, and the bonding force is greater.

[0243] In the embodiment of the present application, the mobile phone 500 is taken as an example of the above electronic device for description, see Fig. 9 and Fig.11 As shown, the housing 510 may include a display screen 501 and a back cover 502, and the display screen 501 and the back cover 502 enclose the housing 510 with a cavity inside. The heating element 200 may be arranged on a circuit board 520, and the heat sink 300 may contact the inner surface 5021 of the back cover 502, so that the heat generated by the heating element 200 is transferred to the heat sink 300 through the heat conductive structure 100, and the heat sink 300 dissipates the heat to the outside of the electronic device through the back cover 502.

[0244] Of course, in some examples, when the back cover 502 and / or the middle frame of the electronic device are made of metal, the back cover 502 and / or the middle frame can serve as a heat sink 300, that is, the heating element 200 can be arranged on the circuit board 520, and one side of the thermal conductive structure 100 covers the heating element 200, and the other side of the thermal conductive structure 100 can be pressed against the inner surface of the back cover 502 or the middle frame of the electronic device. In this way, the heat generated by the heating element 200 is transferred to the back cover 502 or the middle frame of the electronic device through the thermal conductive structure 100, thereby achieving the purpose of dissipating heat outward.

[0245] Alternatively, in some examples, due to limitations on the layout of components within the electronic device, the heat sink 300 cannot come into contact with the back cover 502 or the middle frame of the electronic device, so the heat sink 300 can be connected to the back cover 502 or the middle frame of the electronic device through a thermally conductive metal, so that the heat on the heat sink 300 can be transferred to the back cover 502 or the middle frame of the electronic device through the thermally conductive structure.

[0246] It is to be understood that the structure illustrated in the embodiment of the present application does not constitute a specific limitation on the mobile phone 500. In other embodiments of the present application, the mobile phone 500 may include more or fewer components than shown in the figure, or combine some components, or split some components, or arrange the components differently. The components shown in the figure may be implemented in hardware, software, or a combination of software and hardware.

[0247] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, or it can be an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific circumstances.

[0248] The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the embodiments of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0249] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the present application, rather than to limit them. Although the embodiments of the present application have been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. These modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A heat-conducting structure for transferring heat generated by a heating element to a radiator, characterized in that: include: A plurality of heat-conducting films and one or more dielectric layers, wherein the heat-conducting films and the dielectric layers are arranged alternately; One end of the thermally conductive film faces the heating element, and the other end faces the heat sink, and the thermally conductive film and the dielectric layer are alternately arranged along a direction perpendicular to the one end and the other end; The dielectric layer at least comprises: a first organic material and a second organic material located in the first organic material; The first organic material is used to bond two adjacent thermally conductive films; The second organic material is used to diffuse through the first organic material toward the outer surface of the heat-conducting structure when the heat-conducting structure is at a preset temperature or a preset pressure, and the second organic material diffused outward forms an adhesive layer between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink, and the adhesive layer is used to connect the heat-conducting structure to the heating element and / or the heat-conducting structure to the heat sink.

2. The heat conducting structure according to claim 1, characterized in that: The preset temperature is greater than or equal to 35°C.

3. The heat conducting structure according to claim 1, characterized in that: The preset pressure is greater than or equal to 5 psi.

4. The heat conducting structure according to claim 1, characterized in that: The second organic material diffused outward forms an adhesive layer having van der Waals force, chemical bond force or bite force between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the heat sink.

5. The heat conducting structure according to claim 1, characterized in that: At the preset temperature or the preset pressure, the second organic material diffuses through the bulk of the first organic material.

6. The heat conducting structure according to claim 1, characterized in that: The first organic material is in a solid state, and the second organic material is in a liquid or semi-solid state.

7. The heat-conducting structure according to claim 1, characterized in that: The bonding force between the bonding layer and the heat sink, and / or the bonding force between the bonding layer and the heating element, is greater than the cohesive force of the dielectric layer.

8. The heat conducting structure according to any one of claims 1 to 7, characterized in that: The second organic material is a material that undergoes a dehydration condensation reaction or a polymerization reaction with the heating element and / or with at least a portion of the outer surface of the heat sink facing the thermal conductive structure under preset reaction conditions; wherein the preset reaction conditions include reaction temperature, reaction humidity or reaction medium.

9. The heat conducting structure according to claim 8, characterized in that: The reaction temperature is greater than or equal to 35°C.

10. The heat-conducting structure according to claim 8, characterized in that: The reaction humidity is greater than or equal to 10%.

11. The heat-conducting structure according to claim 8, characterized in that: The second organic material includes a liquid material containing an active hydroxyl group and a liquid material containing a hydrolyzable group.

12. The heat-conducting structure according to claim 11, characterized in that: The liquid material having active hydroxyl groups includes polyols.

13. The heat conducting structure according to claim 12, characterized in that: The liquid material containing a hydrolyzable group is a silane coupling agent.

14. The heat-conducting structure according to claim 13, characterized in that: The polyol is at least one of butanetriol, pentaerythritol, glycerol, trimethylolethane, xylitol or sorbitol, and the silane coupling agent is trialkoxysilane, or the silane coupling agent is octyltriethoxysilane.

15. The heat-conducting structure according to claim 8, characterized in that: The adhesive layer formed after the second organic material undergoes polymerization reaction has a pressure-sensitive property.

16. The heat-conducting structure according to claim 8, characterized in that: The second organic material is an unsaturated acrylic material.

17. The heat-conducting structure according to claim 16, characterized in that: The unsaturated acrylic material is an acrylic material containing an ester functional group, or the unsaturated acrylic material is an acrylic material containing a hydrophilic group.

18. The heat conducting structure according to any one of claims 1 to 7, characterized in that: The angle formed between the side of the thermal conductive film facing the dielectric layer and the thickness direction of the thermal conductive structure is greater than 0° and less than or equal to 45°, or An angle formed between a side of the heat-conducting film facing the dielectric layer and a side of the heat-conducting film facing away from the dielectric layer and a thickness direction of the heat-conducting structure is greater than 0° and less than or equal to 45°.

19. The heat conducting structure according to any one of claims 1 to 7, characterized in that: The first organic material is polysilicone oil containing at least unsaturated siloxane.

20. The heat-conducting structure according to claim 19, characterized in that: The first organic material includes vinyl silicone oil and hydrogen-containing silicone oil, and the molecular weights of the vinyl silicone oil and the hydrogen-containing silicone oil are both less than 15,000.

21. The heat-conducting structure according to claim 20, characterized in that: The hydrogen-containing silicone oil includes at least one of terminal hydrogen silicone oil and pendant hydrogen silicone oil.

22. The heat conducting structure according to any one of claims 1 to 7, characterized in that: The first organic material is an organic chemical containing acrylic acid, polyurethane, epoxy or polyimide.

23. The heat-conducting structure according to claim 22, characterized in that: The first organic material includes 4-hydroxybutyl acrylate and divinyl adipate.

24. The heat conducting structure according to any one of claims 1 to 7, characterized in that: The weight percentage of the second organic material diffused outwards in the dielectric layer is less than or equal to 50%.

25. The heat-conducting structure according to any one of claims 1 to 7, characterized in that: The weight percentage of the second organic material in the first organic material is less than 50%.

26. The heat-conducting structure according to any one of claims 1 to 7, characterized in that: The thickness of the adhesive layer is less than or equal to 1 μm.

27. The heat conducting structure according to any one of claims 1 to 7, characterized in that: The thickness of the heat-conducting structure is greater than or equal to 0.1 mm and less than or equal to 5 mm.

28. The heat-conducting structure according to any one of claims 1 to 7, characterized in that: The thermal conductivity of the heat-conducting structure in the first direction is greater than the thermal conductivity of the heat-conducting structure in the second direction, and the thermal conductivity of the heat-conducting structure in the third direction is greater than the thermal conductivity of the heat-conducting structure in the second direction, wherein the first direction is a direction perpendicular to a side of the heating element facing the heat-conducting structure, the second direction is a direction perpendicular to a side of the heat-conducting film facing the dielectric layer, and the third direction is a direction perpendicular to both the first direction and the second direction.

29. The heat-conducting structure according to claim 28, characterized in that: A ratio of a thermal conductivity coefficient of the heat-conducting structure in the first direction to a thermal conductivity coefficient of the heat-conducting structure in the second direction is greater than or equal to 5.

30. The heat-conducting structure according to claim 28, characterized in that: The thermal conductivity of the heat-conducting structure in the first direction is greater than or equal to 35 W / mk.

31. The heat-conducting structure according to claim 28, characterized in that: The thickness of each of the thermally conductive films is greater than or equal to 7 μm and less than or equal to 200 μm.

32. The heat-conducting structure according to claim 28, characterized in that: The thermally conductive film is a compressible thermally conductive film.

33. The heat-conducting structure according to claim 28, characterized in that: The thermally conductive film is a graphene film or a graphite film.

34. A heat conduction system, characterized in that: It comprises a heating element and a heat-conducting structure as claimed in any one of claims 1 to 33, wherein the heat-conducting structure is used to transfer heat from the heating element.

35. The heat transfer system according to claim 34, characterized in that A heat sink is also included. The heat-conducting structure is located between the heat-generating element and the heat sink. The heat-conducting structure is used to transfer heat from the heat-generating element to the heat sink.

36. A chip packaging structure, characterized in that: At least: A chip, a package heat dissipation cover and a heat conducting structure according to any one of claims 1 to 33 are arranged on a package carrier, wherein the heat conducting structure is located between the chip and the package heat dissipation cover; Moreover, under a preset temperature or a preset pressure, the second organic material in the thermally conductive structure diffuses outwardly between the thermally conductive structure and the chip and / or between the thermally conductive structure and the package heat dissipation cover to form an adhesive layer, and the thermally conductive structure and the chip and / or between the thermally conductive structure and the package heat dissipation cover are connected via the adhesive layer.

37. The chip packaging structure according to claim 36, characterized in that: Also includes: A fixed frame is located between the package carrier and the package heat dissipation cover, and the fixed frame, the package carrier and the package heat dissipation cover form a cavity, and the chip and the heat conduction structure are located in the cavity.

38. The chip packaging structure according to claim 37, characterized in that: The fixing frame and the package heat dissipation cover are fastened together by elastic fasteners, or the fixing frame and the package heat dissipation cover are integrated.

39. The chip packaging structure according to claim 37, characterized in that: The fixing frame and the packaging carrier are tightly connected.

40. An electronic device, characterized in that: At least: The chip packaging structure described in any one of claims 36-39 above.

41. An electronic device, characterized in that: At least: A shell, a heating element and a heat sink arranged in the shell, and a heat-conducting structure as described in any one of claims 1 to 33, wherein the heat-conducting structure is located between the heating element and the heat sink.

42. The electronic device according to claim 41, characterized in that The heat sink is in contact with the housing.

43. A method for manufacturing a heat-conducting structure, characterized in that: The method comprises: Providing a plurality of thermally conductive films, each of the thermally conductive films having a first surface and a second surface opposite to the first surface; forming a dielectric layer on the first surface and the second surface of each of the heat-conducting films, the dielectric layer comprising a first organic material and a second organic material located in the first organic material, wherein the second organic material is used to diffuse through the first organic material toward the outer surface of the heat-conducting structure and form an adhesive layer when the heat-conducting structure is at a preset temperature or a preset pressure; stacking and pressing a plurality of the thermally conductive films formed with the dielectric layer to form a block structure; The block structure is cut to obtain a heat-conducting structure.

44. The method for manufacturing a heat-conducting structure according to claim 43, characterized in that: The step of cutting the block structure to obtain a heat-conducting structure comprises: The block structure is cut along a cutting direction, and an angle is formed between a direction perpendicular to the thermal conductive film and the cutting direction, and the angle is greater than or equal to 0° and less than or equal to 45°.

45. The method for manufacturing a heat-conducting structure according to claim 43 or 44, characterized in that: The forming of a dielectric layer on the first surface and the second surface of each of the thermally conductive films comprises: Providing vinyl silicone oil, hydrogen-terminated silicone oil, hydrogen-containing silicone oil and a catalyst, and mixing them to prepare the first organic material; Providing butanetriol and octyltriethoxysilane, and mixing the butanetriol and octyltriethoxysilane to prepare the second organic material; mixing the first organic material and the second organic material to form the organic slurry; Applying the organic slurry on the first surface and the second surface of each of the thermally conductive films to form the dielectric layer; or, Providing a first organic material, wherein the first organic material includes 4-hydroxybutyl acrylate and divinyl adipate; providing a second organic material, the second organic material comprising 2-ethylhexyl acrylate; providing an initiator, the initiator comprising a photopolymerization initiator and a thermal initiator; The organic slurry is prepared by mixing the 4-hydroxybutyl acrylate, the divinyl adipate, the 2-ethylhexyl acrylate, the photopolymerization initiator and the thermal initiator; The organic slurry is coated on the first surface and the second surface of each of the thermally conductive films to form the dielectric layer.

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