Light emitting device
By employing a double-layer emission layer structure in the light-emitting device, the triplet energy difference between the first and second emission layers is ensured to be above 0.2 eV, allowing holes and electrons to recombine between the two layers. This solves the problem of easy degradation of the electron blocking layer, extends the device lifespan, and improves the luminous efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SAMSUNG DISPLAY CO LTD
- Filing Date
- 2021-07-08
- Publication Date
- 2026-04-14
AI Technical Summary
In the prior art, the electron blocking layer of the light-emitting device is prone to degradation at the hole-electron recombination interface, resulting in a shortened device lifespan.
A double-emitting-layer structure is adopted, in which the triplet energy difference between the first and second emitter layers satisfies the design of T1H1-T1H2≥0.2eV. Holes and electrons recombine between the first and second emitter layers, avoiding direct contact between the electron blocking layer and reducing its degradation.
It effectively prevents or reduces the degradation of the electron blocking layer, improves the lifespan of the light-emitting device, and enhances the luminous efficiency.
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Figure CN113964275B_ABST
Abstract
Description
[0001] Cross-reference to related applications
[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0090568, filed on July 21, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field
[0003] One or more embodiments of this disclosure relate to light-emitting devices and electronic devices including the same. Background Technology
[0004] The light-emitting device is a self-emitting device, which, compared with other devices in the field, has a wide viewing angle, high contrast, short response time, and superior characteristics in terms of brightness, driving voltage, and response speed.
[0005] In a light-emitting device, a first electrode is placed on a substrate, and a hole transport region, an emitter layer, an electron transport region, and a second electrode are sequentially arranged on the first electrode. Holes supplied from the first electrode can move to the emitter layer through the hole transport region, and electrons supplied from the second electrode can move to the emitter layer through the electron transport region. Charge carriers, such as holes and electrons, recombine in the emitter layer to generate excitons, thereby producing light. Summary of the Invention
[0006] One or more embodiments of this disclosure include apparatuses that improve lifespan compared to other prior art devices by preventing or reducing the degradation of the electron blocking layer.
[0007] Further aspects of the implementation will be set forth in part in the description which follows, and will be apparent in part from the description or may be recognized by practice of the embodiments of this disclosure.
[0008] According to one or more embodiments, the light-emitting device includes:
[0009] First electrode,
[0010] Facing the second electrode of the first electrode,
[0011] An interlayer comprising an emission layer between the first and second electrodes.
[0012] The emission layer includes: a first emission layer comprising a first body; and a second emission layer comprising a second body, wherein the triplet energy (T1) of the first body is... H1 ) and the triplet energy of the second subject (T1) H2 ) satisfies equation (1):
[0013] T1 H1 -T1 H2 ≥0.2eV(1).
[0014] According to one or more embodiments, the electronic device includes:
[0015] Light-emitting device. Attached Figure Description
[0016] The above and other aspects and features of specific embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, wherein:
[0017] Figure 1 This is a schematic diagram of a light-emitting device according to an embodiment of the present disclosure;
[0018] Figure 2 To show a cross-sectional view of a light-emitting device according to an embodiment of the present disclosure; and
[0019] Figure 3 A cross-sectional view of a light-emitting device according to another embodiment of the present disclosure is shown. Detailed Implementation
[0020] Reference will now be made in more detail to embodiments of this disclosure, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this respect, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the figures to explain aspects of the embodiments described herein. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.
[0021] In existing organic light-emitting devices, the emitting layer that emits fluorescent blue light comprises a single host and a single dopant, and this host exhibits stronger electron transport (ET) properties than hole transport (HT). For this reason, holes and electrons recombine at the interface between the electron blocking layer and the emitting layer, resulting in triplet-triplet fusion (TTF). Consequently, degradation or deterioration of the electron blocking layer occurs, leading to a shortened lifetime for devices with this arrangement.
[0022] Embodiments of this disclosure provide a light-emitting device, which includes:
[0023] First electrode;
[0024] The second electrode facing the first electrode; and
[0025] An interlayer comprising an emission layer between the first and second electrodes.
[0026] The emission layer includes: a first emission layer comprising a first main body and a second emission layer comprising a second main body.
[0027] The triplet energy of the first entity (T1) H1 ) and the triplet energy of the second subject (T1) H2 ) satisfies equation (1):
[0028] T1 H1 -T1 H2 ≥0.2eV(1).
[0029] In the light-emitting device according to an embodiment of the present disclosure, the recombination region of holes and electrons moves to the interface between the first emitting layer and the second emitting layer, rather than to the interface between the electron blocking layer and the emitting layer.
[0030] Therefore, it is possible to prevent or reduce the deterioration or degradation of the electron blocking layer caused by the generated excitons.
[0031] In another embodiment of the light-emitting device according to this disclosure, the first emitting layer has a relatively higher T1 energy level than the second emitting layer. Therefore, the TTF occurs on the side of the second emitting layer (e.g., at the interface between the first and second emitting layers), and the TTF region is narrow. For example, the region where the TTF occurs is relatively small, and in some embodiments, the TTF occurs at the interface between the first and second emitting layers and in the region of the second emitting layer adjacent to the interface between the first and second emitting layers. Therefore, the luminous efficiency of the light-emitting device can be improved.
[0032] When the triplet energy of the first subject (T1) H1 ) and the triplet energy of the second subject (T1) H2 When the difference between the values is less than 0.2 eV, the region where TTF occurs is relatively widely distributed compared to the case where the difference is equal to or greater than 0.2 eV. Therefore, when the difference is less than 0.2 eV, there may be a problem that it does not help improve the efficiency of the device.
[0033] In this embodiment, the first electrode in the light-emitting device may be an anode, the second electrode may be a cathode, and the interlayer may further include a hole transport region between the first electrode and the emitting layer, and an electron transport region between the emitting layer and the second electrode.
[0034] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof, and the electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.
[0035] In an embodiment, each of the first emitting layer and the second emitting layer in the light-emitting device may include a dopant, wherein the dopant of the first emitting layer and the dopant of the second emitting layer may be the same compound.
[0036] In an embodiment, the first emitting layer and the second emitting layer in the light-emitting device may be in contact with each other (e.g., in physical contact).
[0037] In one embodiment, the emitting layer of the light-emitting device can emit blue light.
[0038] In an embodiment, the emitting layer of the light-emitting device may be a fluorescent emitting layer.
[0039] In an embodiment, the interlayer of the light-emitting device may further include a hole transport layer and an electron blocking layer between the first electrode and the emitting layer, and the first emitting layer may be in direct contact (e.g., physical contact) with the electron blocking layer. For example, the interlayer may further include a hole injection layer, and the hole injection layer may be in direct contact (e.g., physical contact) with the first electrode. For example, the hole injection layer may include a charge-generating material. For example, the hole injection layer may include a p-doped compound.
[0040] In an embodiment, the interlayer of the light-emitting device may further include an electron transport layer and a hole blocking layer between the second electrode and the emitting layer, and the second emitting layer may be in direct contact (e.g., physical contact) with the hole blocking layer.
[0041] For example, the electron transport layer may include a metallic material. Metallic materials will be described below.
[0042] In an embodiment, in the light-emitting device, the first electrode may be an anode, the second electrode may be a cathode, and the first emitting layer and the second emitting layer may be in contact with each other (e.g., physical contact).
[0043] Here, holes provided by the first electrode and electrons provided by the second electrode can recombine at the interface between the first and second emission layers.
[0044] For example, the first emitter layer may be located in the direction of the first electrode.
[0045] Holes and electrons recombine to generate excitons and emit light. Here, the recombination occurs at the interface between the first and second emitting layers, so that the degradation or deterioration of the electron blocking layer that occurs in prior art light-emitting devices does not occur (or substantially does not occur) in the embodiments of this disclosure. This significantly improves the device's lifetime.
[0046] In the light-emitting device according to an embodiment of the present disclosure, the triplet energy relationship between the first body and the second body satisfies (or only needs to satisfy) equation (1):
[0047] T1 H1 -T1 H2 ≥0.2 eV(1).
[0048] In an embodiment, the first host may be a pyrene-derived compound. For example, the first host may be a symmetrical pyrene-derived compound. For example, the first host may be a pyrene-derived compound in which two secondary amine groups are substituted for pyrene.
[0049] In the implementation, the first component may be any one of the following compounds:
[0050]
[0051] In embodiments, the second host may be an anthracene-derived compound. For example, the second host may be an anthracene-derived compound in which one aryl group and one heteroaryl group are substituted for anthracene. For example, the second host may be an asymmetric compound.
[0052] In the implementation, the second component may be any of the following compounds:
[0053]
[0054]
[0055] In some embodiments, the light-emitting device may further include a capping layer. The capping layer will be described further below.
[0056] Another aspect of the embodiments of this disclosure includes: an electronic device including a light-emitting device.
[0057] In some embodiments, the electronic device may further include a thin-film transistor.
[0058] The thin-film transistor may include a source electrode and a drain electrode, and
[0059] The first electrode of the light-emitting device can be electrically coupled to one of the source electrode and the drain electrode of the thin-film transistor.
[0060] In some implementations, the electronic device may further include quantum dots.
[0061] As used herein, the term "interlayer" refers to a single layer and / or all of the multiple layers between the first and second electrodes of a light-emitting device.
[0062] Figure 1 Description
[0063] Figure 1 This is a schematic cross-sectional view of the light-emitting device 10 according to an embodiment. The light-emitting device 10 includes a first electrode 110, a sandwich layer 130, and a second electrode 150.
[0064] The following text will combine Figure 1 The structure of the light-emitting device 10 according to the embodiment and the method of manufacturing the light-emitting device 10 are described.
[0065] First electrode 110
[0066] exist Figure 1 In this embodiment, the substrate may additionally be located below the first electrode 110 or above the second electrode 150. The substrate may be a glass substrate and / or a plastic substrate. The substrate may be a flexible substrate. In one or more embodiments, the substrate may comprise a plastic with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.
[0067] The first electrode 110 can be formed, for example, by depositing and / or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, a high work function material that can be easily injected with holes can be used as the material for forming the first electrode 110.
[0068] The first electrode 110 may be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. In an embodiment, when the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a semi-transparent electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.
[0069] The first electrode 110 may have a monolayer structure comprising a single layer (e.g., composed of a single layer) or a multilayer structure comprising multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.
[0070] mezzanine 130
[0071] The interlayer 130 is on the first electrode 110. The interlayer 130 includes an emitter layer.
[0072] The interlayer 130 may further include a hole transport region between the first electrode 110 and the emitter layer and an electron transport region between the emitter layer and the second electrode 150.
[0073] In addition to various suitable organic materials, the interlayer 130 may further include metal-containing compounds such as organometallic compounds and / or inorganic materials such as quantum dots.
[0074] In an embodiment, the interlayer 130 may include i) two or more emitting units stacked sequentially between the first electrode 110 and the second electrode 150, and ii) a charge generating layer between two emitting units. When the interlayer 130 includes the emitting units and charge generating layer as described above, the light-emitting device 10 may be a series light-emitting device.
[0075] Hole transport region in interlayer 130
[0076] The hole transport region may have: i) a single-layer structure comprising a single layer (e.g., composed of a single layer) comprising a single material (e.g., composed of a single material), ii) a single-layer structure comprising a single layer (e.g., composed of a single layer) comprising multiple different materials (e.g., composed of multiple different materials), or iii) a multi-layer structure comprising multiple layers comprising multiple different materials.
[0077] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.
[0078] For example, the hole transport region may have a multilayer structure including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein in each structure, the layers are stacked sequentially on the first electrode 110.
[0079] The hole transport region may include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof:
[0080] Formula 201
[0081]
[0082] Formula 202
[0083]
[0084] Among them, in equations 201 and 202,
[0085] L 201 To L 204 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,
[0086] L 205 It can be *-O-*', *-S-*', or *-N(Q)201 )-*', unsubstituted or by at least one R 10a Replacement C1-C 20 Alkylene, unsubstituted, or with at least one R 10a Replacement C2-C 20 alkenyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,
[0087] xa1 to xa4 can each be an integer selected from 0 to 5 independently.
[0088] xa5 can be an integer selected from 1 to 10.
[0089] R 201 To R 204 and Q 201 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,
[0090] R 201 and R 202 Optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a (e.g., carbazole group, etc.) substituted C8-C 60 Polycyclic groups (e.g., see compound HT16),
[0091] R 203 and R 204 Optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a Replacement C8-C 60 Polycyclic groups, and
[0092] na1 can be an integer selected from 1 to 4.
[0093] For example, formulas 201 and 202 may each include at least one of the groups represented by formulas CY201 to CY217:
[0094]
[0095] In equations CY201 to CY217, R 10b and R 10c Each can be combined with R 10a The descriptions are the same, CY ring 201 To CY 204 Each can be independently C3-C 20 Carbocyclic groups or C1-C 20 Heterocyclic groups, and at least one hydrogen in formulas CY201 to CY217 may be unsubstituted or replaced by at least one R 10a replace.
[0096] In the implementation, the ring CY in formulas CY201 to CY217 201 To CY 204 Each can be independently phenyl, naphthyl, phenanthryl or anthracene.
[0097] In one or more embodiments, formula 201 and formula 202 may each include at least one group selected from formulas CY201 to CY203.
[0098] In one or more embodiments, formula 201 may include at least one group selected from formulas CY201 to CY203 and at least one group selected from formulas CY204 to CY217.
[0099] In one or more embodiments, in formula 201, xa1 can be 1, R 201 It can be a group represented by one of the formulas CY201 to CY203, xa2 can be 0, and R 202 It can be a group represented by one of the formulas CY204 to CY207.
[0100] In one or more embodiments, each of Formula 201 and Formula 202 may not include a group represented by one of Formulas CY201 to CY203.
[0101] In one or more embodiments, each of Formulas 201 and 202 may not include a group represented by one of Formulas CY201 to CY203, but may include at least one of the groups represented by Formulas CY204 to CY217.
[0102] In one or more embodiments, each of Formula 201 and Formula 202 may not include a group represented by one of Formulas CY201 to CY217.
[0103] For example, the hole transport region may include one of compounds HT1 to HT44, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or any combination thereof:
[0104]
[0105]
[0106]
[0107]
[0108] The thickness of the hole transport region can be approximately to approximately For example, about to approximately Within the range. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately... to approximately For example, about to approximately Within a certain range, and the thickness of the hole transport layer can be approximately... to approximately For example, about to approximately Within the range mentioned above, when the thicknesses of the hole transport region, hole injection layer, and hole transport layer are within any of these ranges, appropriate or satisfactory hole transport characteristics can be obtained without a significant increase in the driving voltage.
[0109] The emission assist layer can increase light emission efficiency by compensating for the optical resonant distance according to the wavelength of the light emitted by the emission layer, and the electron blocking layer can block or reduce the flow of electrons from the electron transport region. The emission assist layer and the electron blocking layer can comprise the materials described above.
[0110] p-dopants
[0111] In addition to these materials, the hole transport region may further include a charge-generating material for improving electrical conductivity (e.g., electrical conductivity). The charge-generating material may be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a single layer of charge-generating material).
[0112] The charge-generating material can be, for example, a p-doped agent.
[0113] For example, p-doped agents can have a lowest unoccupied molecular orbital (LUMO) energy level equal to or less than -3.5 eV.
[0114] In embodiments, p-dopersive agents may include quinone derivatives, cyano-containing compounds, compounds containing elements EL1 and EL2, or any combination thereof.
[0115] Examples of quinone derivatives include TCNQ and F4-TCNQ.
[0116] Examples of cyano-containing compounds include HAT-CN and compounds represented by formula 221:
[0117]
[0118] Equation 221
[0119] In Equation 221,
[0120] R 221 To R 223 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups, and
[0121] R 221 To R 223 At least one of them can be independently replaced by C3-C respectively. 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof 20 Alkyl groups; or any combination thereof.
[0122] For compounds containing elements EL1 and EL2, element EL1 can be a metal, a metalloid, or a combination thereof, and element EL2 can be a nonmetal, a metalloid, or a combination thereof.
[0123] Examples of metals include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and / or cesium (Cs); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), and / or barium (Ba); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), and cobalt (C). (e.g., rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag) and / or gold (Au); post-transition metals (e.g., zinc (Zn), indium (In) and / or tin (Sn); and lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) and / or lutetium (Lu).)
[0124] Examples of metalloids include silicon (Si), antimony (Sb), and tellurium (Te).
[0125] Examples of nonmetals include oxygen (O) and halogens (e.g., F, Cl, Br, I, etc.).
[0126] In embodiments, examples of compounds containing elements EL1 and EL2 include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides and / or metal iodides), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides and / or quasi-metal iodides), metal tellurides, and any combination thereof.
[0127] Examples of metal oxides include tungsten oxides (e.g., WO, W2O3, WO2, WO3 and / or W2O5), vanadium oxides (e.g., VO, V2O3, VO2 and / or V2O5), molybdenum oxides (MoO, Mo2O3, MoO2, MoO3 and / or Mo2O5) and rhenium oxides (e.g., ReO3).
[0128] Examples of metal halides include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.
[0129] Examples of alkali metal halides include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.
[0130] Examples of alkaline earth metal halides include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.
[0131] Examples of transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4 and / or TiI4), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4 and / or ZrI4), hafnium halides (e.g., HfF4, HfCl4, HfBr4 and / or HfI4), vanadium halides (e.g., VF3, VCl3, VBr3 and / or VI3), niobium halides (e.g., NbF3, NbCl3, NbBr3 and / or NbI3), and tantalum halides (e.g., TaF3, TaCl3, TaBr3). 3 and / or TaI3), chromium halides (e.g., CrF3, CrCl3, CrBr3 and / or CrI3), molybdenum halides (e.g., MoF3, MoCl3, MoBr3 and / or MoI3), tungsten halides (e.g., WF3, WCl3, WBr3 and / or WI3), manganese halides (e.g., MnF2, MnCl2, MnBr2 and / or MnI2), technetium halides (e.g., TcF2, TcCl2, TcBr2 and / or TcI2), rhenium halides (e.g., ReF2, ReCl2, ReBr2 and / or ReI3), and chromium halides (e.g., CrF3, CrCl3, CrBr3 and / or CrI3), molybdenum halides (e.g., MoF3, MoCl3, MoBr3 and / or MoI3), tungsten halides (e.g., WF3, WCl3, WBr3 and / or WI3), manganese halides (e.g., MnF2, MnCl2, MnBr2 and / or MnI2), technetium halides (e.g., TcF2, TcCl2, TcBr2 and / or TcI2), and rhenium halides (e.g., ReF2, ReCl2, ReBr2 and / or ReI3). (e.g., FeF2, FeCl2, FeBr2 and / or FeI2), ruthenium halides (e.g., RuF2, RuCl2, RuBr2 and / or RuI2), osmium halides (e.g., OsF2, OsCl2, OsBr2 and / or OsI2), cobalt halides (e.g., CoF2, CoCl2, CoBr2 and / or CoI2), rhodium halides (e.g., RhF2, RhCl2, RhBr2 and / or RhI2), iridium halides (e.g., IrF2, IrCl2, IrBr2 and / or IrI2). 2 and / or IrI2), nickel halides (e.g., NiF2, NiCl2, NiBr2 and / or NiI2), palladium halides (e.g., PdF2, PdCl2, PdBr2 and / or PdI2), platinum halides (e.g., PtF2, PtCl2, PtBr2 and / or PtI2), copper halides (e.g., CuF, CuCl, CuBr and / or CuI), silver halides (e.g., AgF, AgCl, AgBr and / or AgI), and gold halides (e.g., AuF, AuCl, AuBr and / or AuI).
[0132] Examples of post-transition metal halides include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, and / or ZnI2), indium halides (e.g., InI3), and tin halides (e.g., SnI2).
[0133] Examples of lanthanide metal halides include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3.
[0134] Examples of metal halide include antimony halides (e.g., SbCl5).
[0135] Examples of metal tellurides include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te and / or Cs₂Te), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe and / or BaTe), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, F₂Te, F₂Te, F₃ ... eTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe and / or Au2Te), post-transition metal tellurides (e.g., ZnTe) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe and / or LuTe).
[0136] emission layer in interlayer 130
[0137] When the light-emitting device 10 is a full-color light-emitting device, the emitting layer can be patterned into a red emitting layer, a green emitting layer, and / or a blue emitting layer according to the sub-pixels. In embodiments, the emitting layer may have a stacked structure of two or more layers selected from red, green, and blue emitting layers, wherein the two or more layers are in contact with each other (e.g., in physical contact) or separated from each other. In one or more embodiments, the emitting layer may include two or more materials selected from red, green, and blue emitting materials, wherein the two or more materials are mixed with each other in a single layer to emit white light.
[0138] The emitting layer may include a host and a dopant. The dopant may include phosphorescent dopant, fluorescent dopant, or any combination thereof.
[0139] Based on 100 parts by weight of the host, the amount of dopant in the emitter layer can range from about 0.01 parts by weight to about 15 parts by weight.
[0140] In one or more embodiments, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may act as a host or dopant in the emission layer.
[0141] The thickness of the emission layer can be approximately to approximately For example, about to approximately Within the specified range, when the thickness of the emitting layer is within any of the above ranges, excellent light emission characteristics can be obtained without a significant increase in the driving voltage.
[0142] The main body in the emission layer
[0143] The triplet energy (T1) of the first host in the first and second emitter layers H1 ) and the triplet energy of the second subject (T1) H2 It can satisfy equation (1):
[0144] T1 H1 -T1 H2 ≥0.2eV(1).
[0145] In the light-emitting device according to the embodiments of the present disclosure, the triplet energy relationship between the first subject and the second subject only needs to satisfy equation (1). For example, any suitable first subject and any suitable second subject that satisfies equation (1) can be used.
[0146] In one embodiment, the first host may be a pyrene-derived compound. In one or more embodiments, the first host may be a symmetrical pyrene-derived compound. In one or more embodiments, the first host may be a pyrene-derived compound in which two secondary amine groups are substituted for pyrene.
[0147] In one or more embodiments, the second host may be an anthracene-derived compound. In one or more embodiments, the second host may be an anthracene-derived compound in which one aryl group and one heteroaryl group are substituted for anthracene. In one or more embodiments, the second host may be an asymmetric compound.
[0148] The instances of the first and second subjects can be the same as those described above.
[0149] Other examples of the first subject and the second subject may include the following:
[0150]
[0151]
[0152]
[0153]
[0154]
[0155] Fluorescent dopants
[0156] Fluorescent dopants may include amine-containing compounds, styrene-containing compounds, or any combination thereof.
[0157] In an embodiment, the fluorescent dopant may include a compound represented by formula 501:
[0158] Formula 501
[0159]
[0160] In Equation 501,
[0161] Ar 501 L 501 To L 503 R 501 and R 502 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,
[0162] xd1 to xd3 can each be independently 0, 1, 2, or 3, and
[0163] xd4 can be 1, 2, 3, 4, 5 or 6.
[0164] In the implementation, Ar in Formula 501 501 It can be a fused ring group (e.g., anthracene, 1,2-benzophenanthrene, or pyrene), wherein three or more monocyclic groups are fused together.
[0165] In one or more embodiments, xd4 in Formula 501 may be 2.
[0166] In one or more embodiments, the fluorescent dopant may include: one of compounds FD1 to FD36; DPVBi; DPAVBi; or any combination thereof:
[0167]
[0168]
[0169]
[0170] Delayed fluorescence materials
[0171] The emission layer may include a delayed fluorescence material.
[0172] The delayed fluorescence material used in this paper can be selected from any suitable compound that can emit delayed fluorescence based on the delayed fluorescence emission mechanism.
[0173] The delayed fluorescence material included in the emission layer can act as either a host or a dopant, depending on the type (e.g., composition) of the other materials included in the emission layer.
[0174] In this embodiment, the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescent material can be equal to or greater than 0 eV and equal to or less than 0.5 eV. When the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescent material satisfies the above range, the upconversion from the triplet state to the singlet state of the delayed fluorescent material can occur effectively, thus the light-emitting device 10 can have improved luminous efficiency.
[0175] For example, delayed fluorescence materials may include: i) including at least one electron donor (e.g., π-electron-rich C3-C 60 Cyclic groups, such as carbazole groups, and at least one electron acceptor (e.g., sulfoxide, cyano, or a nitrogen-containing C1-C group lacking π electrons). 60 Materials with cyclic groups, ii) including C8-C 60 Materials with polycyclic groups, wherein two or more cyclic groups share boron (B) and are fused together (e.g., combined together).
[0176] Delayed fluorescence materials may include at least one of compounds DF1 to DF9:
[0177]
[0178] quantum dots
[0179] As used herein, quantum dot refers to a crystal of semiconductor compound and may include any suitable material capable of emitting light of various suitable emission wavelengths depending on the size of the crystal.
[0180] The diameter of quantum dots can be, for example, in the range of about 1 nm to about 10 nm.
[0181] Quantum dots can be synthesized using wet chemical processes, metal-organic chemical vapor deposition, molecular beam epitaxy, or similar processes.
[0182] Wet chemistry refers to a method of mixing organic solvents and precursor materials, and then growing quantum dot crystals. During crystal growth, the organic solvent acts as a dispersant that naturally coordinates on the surface of the quantum dot crystals and controls the crystal growth. Therefore, the growth of quantum dot particles can be controlled by using processes that are easier and cheaper to perform compared to vapor deposition processes, such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).
[0183] Quantum dots may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.
[0184] Examples of group II-VI semiconductor compounds include binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS; and ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnS e, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe; and any combination thereof.
[0185] Examples of Group III-V semiconductor compounds include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb; and any combination thereof. Group III-V semiconductor compounds may further include Group II elements. Examples of group III-V semiconductor compounds that further include group II elements include InZnP, InGaZnP, and InAlZnP.
[0186] Examples of group III-VI semiconductor compounds include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, In2S3, InSe, In2Se3 and / or InTe; ternary compounds such as InGaS3 and / or InGaSe3; and any combination thereof.
[0187] Examples of group I-III-VI semiconductor compounds include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2 and / or AgAlO2; and any combination thereof.
[0188] Examples of group IV-VI semiconductor compounds include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe and / or SnPbSTe; and any combination thereof.
[0189] In embodiments, Group IV elements or compounds may include single elements, such as Si or Ge; binary compounds, such as SiC and / or SiGe; or any combination thereof.
[0190] Each element in a multi-element compound, such as a binary, ternary, or quaternary compound, may exist in the particles at a uniform or non-uniform concentration.
[0191] In some embodiments, the quantum dots may have a single structure or a core-shell dual structure, with the single structure having a uniform (e.g., substantially uniform) concentration of each element contained in the respective quantum dot. In embodiments, the material contained in the core may differ from the material contained in the shell.
[0192] The shell of a quantum dot can act as a protective layer to maintain semiconductor properties by preventing or reducing the chemical degradation of the nucleus, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. The interface between the nucleus and the shell can have a concentration gradient, where the concentration of elements present in the shell decreases towards the center of the nucleus.
[0193] Examples of shells for quantum dots include metal and / or nonmetal oxides, semiconductor compounds, or any combination thereof. Examples of metal and / or nonmetal oxides include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and / or NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and / or CoMn2O4; and any combination thereof. Examples of semiconductor compounds include Group III-VI, Group II-VI, Group III-V, Group I-III-VI, Group IV-VI semiconductor compounds, or any combination thereof as described herein. In embodiments, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.
[0194] The full width at half maximum (FWHM) of the emission wavelength spectrum of quantum dots can be equal to or less than about 45 nm, for example, equal to or less than about 40 nm, and for example, equal to or less than about 30 nm. When the FWHM of the emission wavelength spectrum of quantum dots is within any of the above ranges, color purity or color reproduction can be improved. Furthermore, light emitted through such quantum dots radiates in all directions (e.g., substantially in every direction). Therefore, a wide viewing angle can be increased.
[0195] In addition, quantum dots can be, for example, spherical, cone-shaped, multi-armed and / or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanosheet particles.
[0196] By adjusting the size of the quantum dots, the band gap can also be adjusted, thereby obtaining light of various suitable wavelengths in the quantum dot emission layer. Therefore, by using quantum dots of different sizes, light-emitting devices that emit light of various suitable wavelengths can be realized. In this embodiment, the size of the quantum dots can be selected to emit red, green, and / or blue light. Furthermore, the size of the quantum dots can be adjusted so that various suitable colors of light can be combined to emit white light.
[0197] Electron transport region in interlayer 130
[0198] The electron transport region may have: i) a single-layer structure comprising a single layer (e.g., composed of a single layer) of a single material (e.g., composed of a single material), ii) a single-layer structure comprising a single layer (e.g., composed of a single layer) of a single material (e.g., composed of a single material), or iii) a multilayer structure comprising multiple layers of a multiple material.
[0199] In some embodiments, the electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.
[0200] For example, the electron transport region may have an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, wherein, in each structure, the layers are stacked sequentially on the emitter layer.
[0201] The electron transport region (e.g., a hole-blocking layer or electron transport layer within the electron transport region) may comprise a metal-free compound comprising at least one π-electron-deficient nitrogen-containing C1-C. 60 Cyclic groups.
[0202] In an embodiment, the electron transport region may include a compound represented by formula 601:
[0203] Formula 601
[0204] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21
[0205] In Equation 601,
[0206] Ar 601 and L 601 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10aReplacement C1-C 60 Heterocyclic groups,
[0207] xe11 can be 1, 2, or 3.
[0208] xe1 can be 0, 1, 2, 3, 4, or 5.
[0209] R 601 It can be unsubstituted or by at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),
[0210] Q 601 To Q 603 Each can be combined with Q 11 The descriptions are the same.
[0211] xe21 can be 1, 2, 3, 4, or 5, and
[0212] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or by at least one R. 10a Substituted π-electron-deficient nitrogen-containing C1-C 60 Cyclic groups.
[0213] In one or more embodiments, when xe1 in formula 601 is 2 or greater, two or more Ar 601 They can be connected to each other via a single key.
[0214] In one or more embodiments, Ar in Formula 601 601 It can be a substituted or unsubstituted anthracene group.
[0215] In one or more embodiments, the electron transport region may include a compound represented by formula 601-1:
[0216] Formula 601-1
[0217]
[0218] In Equation 601-1,
[0219] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and X 614 To X 616 At least one of them can be N,
[0220] L 611 To L 613 Each can be combined with L 601 The descriptions are the same.
[0221] xe611 to xe613 can each be identical to the description in conjunction with xe1.
[0222] R 611 To R 613 Each can be combined with R 601 The descriptions are the same, and
[0223] R 614 To R 616 Each can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups.
[0224] For example, xe1 and xe611 to xe613 in Equations 601 and 601-1 can each be 0, 1 or 2 independently.
[0225] The electron transport region may include one of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:
[0226]
[0227]
[0228]
[0229]
[0230] The thickness of the electron transport region can be approximately to approximately For example, about to approximately Within the range. When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer can be approximately... to approximately For example, about to approximately Within a certain range, and the thickness of the electron transport layer can be approximately... to approximately For example, about to approximately Within the range described above, when the thickness of the hole blocking layer and / or electron transport layer is within any of the above ranges, appropriate or satisfactory electron transport characteristics can be obtained without a significant increase in the driving voltage.
[0231] In addition to the materials mentioned above, the electron transport region (e.g., the electron transport layer in the electron transport region) may further include a metallic material.
[0232] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ions in alkali metal complexes may be Li, Na, K, Rb, or Cs ions, and the metal ions in alkaline earth metal complexes may be Be, Mg, Ca, Sr, or Ba ions. The ligands that coordinate with the metal ions of alkali metal or alkaline earth metal complexes may be hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.
[0233] For example, metal-containing materials may include Li complexes. Li complexes may include, for example, compounds ET-D1 (LiQ) or ET-D2:
[0234]
[0235] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may be in direct contact (e.g., physical contact) with the second electrode 150.
[0236] The electron injection layer may have: i) a monolayer structure comprising a single layer (e.g., composed of a single layer) comprising a single material (e.g., composed of a single material), ii) a monolayer structure comprising a single layer (e.g., composed of a single layer) comprising multiple different materials (e.g., composed of multiple different materials), or iii) a multilayer structure comprising multiple layers comprising multiple different materials.
[0237] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.
[0238] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.
[0239] The alkali metal compound, the alkaline earth metal compound, and the rare earth metal compound may be oxides and halides (e.g., fluorides, chlorides, bromides, or iodides), tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, or any combination thereof.
[0240] The alkali metal compound may be an alkali metal oxide, such as Li2O, Cs2O, and / or K2O, an alkali metal halide, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI, or any combination thereof. The alkaline earth metal compound may include an alkaline earth metal oxide, such as BaO, SrO, CaO, Ba x Sr 1-x O (x is a real number satisfying the condition 0 < x < 1) and / or Ba x Ca 1-x O (x is a real number satisfying the condition 0 < x < 1). The rare earth metal compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the rare earth metal compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.
[0241] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include i) one of the metal ions of alkali metals, alkaline earth metals, and rare earth metals, and ii) as ligands linked to the metal ions, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenidine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.
[0242] The electron-injected layer may include (for example, composed of): alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof, or may further include organic materials (for example, compounds represented by Formula 601).
[0243] In embodiments, the electron-injected layer may include (e.g., composed of): i) an alkali metal compound (e.g., an alkali metal halide), or ii) a) an alkali metal compound (e.g., an alkali metal halide); and b) an alkali metal, alkaline earth metal, rare earth metal, or any combination thereof. In embodiments, the electron-injected layer may be a KI:Yb co-deposited layer and / or an RbI:Yb co-deposited layer.
[0244] When the electron injection layer further includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof can be uniformly or non-uniformly dispersed in the matrix including the organic materials.
[0245] The thickness of the electron injection layer can be approximately to approximately For example, about to approximately Within the specified range, when the thickness of the electron injection layer is within any of the above ranges, appropriate or satisfactory electron injection characteristics can be obtained without a significant increase in the driving voltage.
[0246] Second electrode 150
[0247] The second electrode 150 is located on the interlayer 130 having this structure. The second electrode 150 may be a cathode serving as an electron injection electrode, and may be made of metals, alloys, conductive compounds, or any combination thereof, each having a low work function, as materials for forming the second electrode 150.
[0248] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.
[0249] The second electrode 150 may have a single-layer structure or a multi-layer structure including two or more layers.
[0250] Capping layer
[0251] The first capping layer may be outside the first electrode 110, and / or the second capping layer may be outside the second electrode 150. More specifically, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are stacked sequentially in the order described herein, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked sequentially in the order described herein, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked sequentially in the order described herein.
[0252] The light generated in the emitting layer of the interlayer 130 of the light-emitting device 10 can be extracted to the outside (e.g., radiated) through the first electrode 110, which serves as a semi-transparent electrode or a transmissive electrode, and the first capping layer, and the light generated in the emitting layer of the interlayer 130 of the light-emitting device 10 can be extracted to the outside (e.g., radiated) through the second electrode 150, which serves as a semi-transparent electrode or a transmissive electrode, and the second capping layer.
[0253] The first and second capping layers can increase the external luminous efficiency based on the principle of constructive interference. Therefore, the light extraction efficiency of the light-emitting device 10 is increased, thereby improving the luminous efficiency of the light-emitting device 10.
[0254] Each of the first and second capping layers may include a material with a refractive index of 1.6 or greater (at a wavelength of 589 nm).
[0255] The first capping layer and the second capping layer can each be an organic capping layer including organic materials, an inorganic capping layer including inorganic materials, or a composite capping layer including organic and inorganic materials.
[0256] The compound selected from at least one of the first and second capping layers may independently include carbocyclic compounds, heterocyclic compounds, amino-containing compounds, porphyrin derivatives, phthalocyanine derivatives, naphthalenephthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The carbocyclic compounds, heterocyclic compounds, and amino-containing compounds may optionally be substituted with substituents containing O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.
[0257] In an embodiment, at least one of the first capping layer and the second capping layer may each independently include an amine-containing compound.
[0258] In an embodiment, at least one of the first capping layer and the second capping layer may each independently include a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.
[0259] In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently comprise one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:
[0260]
[0261] electronic devices
[0262] Light-emitting devices can be included in a variety of suitable electronic devices. For example, electronic devices that include light-emitting devices can be light-emitting devices and / or authentication devices, etc.
[0263] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) both a color filter and a color conversion layer. The color filter and / or color conversion layer may be located in at least one direction of propagation of light emitted from the light-emitting device. For example, the light emitted from the light-emitting device may be blue light or white light. The light-emitting device may be the same as described above. In embodiments, the color conversion layer may include quantum dots. Quantum dots may be, for example, quantum dots as described elsewhere herein.
[0264] An electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, a color filter includes a plurality of color filter regions corresponding to the plurality of sub-pixel regions, and a color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixel regions.
[0265] A pixel definition layer can define each sub-pixel region among multiple sub-pixel regions.
[0266] The color filter may further include a color filter region and a light-blocking pattern between adjacent color filter regions in the color filter region, and the color conversion layer may further include a color conversion region and a light-blocking pattern between adjacent color conversion regions in the color conversion region.
[0267] The color filter region (or color conversion region) may include a first region emitting a first color of light, a second region emitting a second color of light, and / or a third region emitting a third color of light, wherein the first color of light, the second color of light, and / or the third color of light may have different maximum emission wavelengths from each other. For example, the first color of light may be red, the second color of light may be green, and the third color of light may be blue. For example, the color filter region (or color conversion region) may include quantum dots. More specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots are the same as those described elsewhere in this specification. Each of the first, second, and third regions may further include a scatterer.
[0268] In one embodiment, the light-emitting device emits first light, a first region absorbs the first light to emit a first first-color light, a second region absorbs the first light to emit a second first-color light, and a third region absorbs the first light to emit a third first-color light. In this embodiment, the first, second, and third first-color lights may have different maximum emission wavelengths. More specifically, the first light may be blue light, the first first-color light may be red light, the second first-color light may be green light, and the third first-color light may be blue light.
[0269] In addition to the light-emitting device 10 as described above, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically connected to either the first electrode 110 or the second electrode 150 selected from the light-emitting device 10.
[0270] Thin-film transistors may further include gate electrodes and / or gate insulating films, etc.
[0271] The active layer may include crystalline silicon, amorphous silicon, organic semiconductors and / or oxide semiconductors, etc.
[0272] The electronic device may further include a sealing portion for sealing the light-emitting device 10. The sealing portion may be between the light-emitting device 10 and the color filter and / or between the light-emitting device 10 and the color conversion layer. The sealing portion allows light from the light-emitting device 10 to be extracted to the outside while (e.g., synchronously) preventing or reducing the penetration of ambient air and moisture into the light-emitting device 10. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one of an organic layer and an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.
[0273] In addition to color filters and / or color conversion layers, the sealed portion may further include various suitable functional layers depending on the application of the electronic device. Functional layers may include touchscreen layers and / or polarization layers, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, and / or an infrared touchscreen layer. The authentication device may be, for example, a biometric authentication device that uses biometric information from a biometric sample (e.g., fingertip and / or pupil) to authenticate an individual.
[0274] In addition to the light-emitting device, the certification device may further include a bioassay information collection unit.
[0275] Electronic devices can be applied to a variety of suitable displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices and / or endoscopic displays), fish finders, a variety of suitable measuring instruments, meters (e.g., meters for vehicles, aircraft and ships) and / or projectors, etc.
[0276] Figure 2 and Figure 3 Description
[0277] Figure 2 A cross-sectional view of a light-emitting device according to an embodiment of the present disclosure is shown.
[0278] Figure 2 The light-emitting device includes a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a package portion 300 that seals the light-emitting device.
[0279] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be on the substrate 100. The buffer layer 210 prevents or reduces the penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.
[0280] The TFT may be located on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.
[0281] The active layer 220 may include inorganic semiconductors (such as silicon and / or polysilicon), organic semiconductors and / or oxide semiconductors, and may include source regions, drain regions and channel regions.
[0282] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be on the active layer 220, and the gate electrode 240 may be on the gate insulating film 230.
[0283] The interlayer insulating film 250 may be on the gate electrode 240. The interlayer insulating film 250 is between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260, and between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270.
[0284] The source electrode 260 and the drain electrode 270 may be on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source and drain regions of the active layer 220, and the source electrode 260 and the drain electrode 270 may be in contact (e.g., physical contact) with the exposed portions of the source and drain regions of the active layer 220.
[0285] The TFT can be electrically coupled to a light-emitting device to drive the light-emitting device and is covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. The light-emitting device may be provided on the passivation layer 280. The light-emitting device includes a first electrode 110, a sandwich layer 130, and a second electrode 150.
[0286] The first electrode 110 may be on the passivation layer 280. The passivation layer 280 does not completely cover the drain electrode 270 and exposes a portion of the drain electrode 270, and the first electrode 110 may be coupled to the exposed portion of the drain electrode 270.
[0287] A pixel defining layer 290, including an insulating material, may be present on the first electrode 110. The pixel defining layer 290 may expose a specific area of the first electrode 110, and an interlayer 130 may be formed in the exposed area of the first electrode 110. The pixel defining layer 290 may be a polyimide or polyacrylic acid-based organic film. In some embodiments, at least some layers of the interlayer 130 may extend beyond the upper portion of the pixel defining layer 290, and thus may be in the form of a common layer.
[0288] The second electrode 150 may be on the interlayer 130, and the capping layer 170 may be additionally formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.
[0289] The encapsulation portion 300 may be on the capping layer 170. The encapsulation portion 300 may be on the light-emitting device and protect the light-emitting device from moisture and / or oxygen. The encapsulation portion 300 may include: an inorganic film, including silicon nitride (SiN). x ), silicon oxide (SiO) x Indium tin oxide, indium zinc oxide, or any combination thereof; organic membranes, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate and / or polyacrylic acid), epoxy resins (e.g., aliphatic glycidyl ether (AGE)), or any combination thereof; or combinations of inorganic and organic membranes.
[0290] Figure 3 A cross-sectional view of a light-emitting device according to another embodiment of the present disclosure is shown.
[0291] Figure 3 Light-emitting devices and Figure 2 The light-emitting device is the same, except that the light-shielding pattern 500 and the functional area 400 are additionally located on the encapsulation portion 300. The functional area 400 can be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. In the embodiment, it includes... Figure 3 The light-emitting device in the light-emitting equipment can be a series light-emitting device.
[0292] Preparation method
[0293] The layers constituting the hole transport region, the emission layer, and the electron transport region can be formed in a specific region using one or more suitable methods, selected from vacuum deposition, spin coating, casting, Langmuir-Brookett (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging.
[0294] When the layers constituting the hole transport region, the emitter layer, and the electron transport region are formed by vacuum deposition, the deposition temperature can be in the range of about 100°C to about 500°C, taking into account the composition of the materials to be included in the layers to be formed and the structure of the layers to be formed. -8 To about 10 -3 Vacuum degree and approximately within the range of Torr to approximately The deposition rate is carried out within a certain range.
[0295] When the layers constituting the hole transport region, the emitter layer, and the electron transport region are formed by spin coating, spin coating can be performed at a coating speed in the range of about 2,000 rpm to about 5,000 rpm and a heat treatment temperature in the range of about 80°C to 200°C, taking into account the composition of the materials to be included in the layers to be formed and the structure of the layers to be formed.
[0296] At least some general definitions of substituents
[0297] As used in this article, the term "C3-C" 60 "Carbocyclic group" refers to a cyclic group consisting only of carbon and having 3 to 60 carbon atoms, and as used herein, "C1-C..." 60 A "heterocyclic group" refers to a cyclic group having 1 to 60 carbon atoms and further including heteroatoms other than carbon. (C3-C) 60 Carbocyclic groups and C1-C 60 The heterocyclic group can be a monocyclic group consisting of a single ring or a polycyclic group in which two or more rings are fused together (e.g., combined together). In embodiments, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.
[0298] As used in this article, the term "cyclic group" includes C3-C 60 Carbocyclic groups and C1-C 60 Heterocyclic groups.
[0299] As used in this article, “π-electron-rich C3-C” 60 "Cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and excluding *-N=*' as the cyclic moiety, and as used herein, "a nitrogen-containing C1-C group lacking π electrons". 60 "Cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as the cyclic part.
[0300] For example,
[0301] C3-C 60 The carbocyclic group can be i) group T1 or ii) a fused-ring group in which two or more groups T1 are fused together (e.g., combined together) (e.g., cyclopentadienyl, adamantyl, norbornel, phenyl, pentanenyl, naphthyl, azuleyl, indaryl, acenaphthel, phenanthyl, anthraceneyl, fluoranyl, triphenylene, pyrene, 1,2-benzophenantyl, peryl, penfenyl, heptanenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubidyl, keratyl, ovoleyl, indole, fluorenyl, spiro-bifluorenyl, benzofluorenyl, indophenantyl, or indoanthracene).
[0302] C1-C 60The heterocyclic group may be i) group T2, ii) a fused-ring group in which two or more groups T2 are fused together (e.g., combined together), or iii) a fused-ring group in which at least one group T2 and at least one group T1 are fused together (e.g., combined together) (e.g., pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, dibenzocarbazole, indocarbazole, indolecarbazole, benzofuranylcarbazole, benzothiophenecarbazole, benzothiophenecarbazole, benzoindocarbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiophene, benzonaphthothiophene, benzonaphthothiophene, benzonaphthothiophene, benzo... Furanodibenzofuranyl, benzofuranodibenzothiophenyl, benzothiophenodibenzothiophenyl, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, benzopyrazolyl, benzimidazolyl, benzooxazolyl, benzoisooxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinoline (e.g., benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cenolinyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazoyl, azafluorenyl, azadibenzothiopheneyl, azadibenzothiopheneyl or azadibenzofuranyl)
[0303] C3-C rich in π electrons 60 The cyclic group may be i) group T1, ii) a fused-ring group in which two or more groups T1 are fused together (e.g., combined together), iii) group T3, iv) a fused-ring group in which two or more groups T3 are fused together (e.g., combined together), or v) a fused-ring group in which at least one group T3 and at least one group T1 are fused together (e.g., combined together) (e.g., C3-C). 60 Carbocyclic groups, pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiol, benzothiophene, benzofuranyl, carbazole, dibenzothiol, dibenzothiophene, dibenzofuranyl, indole-carbazole, indole-carbazole, benzofuran-carbazole, benzothiophene-carbazole, benzothiophene-carbazole, benzoindole-carbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiol, benzofuran-dibenzofuranyl, benzofuran-dibenzothiophene or benzothiophene-dibenzothiophene).
[0304] Nitrogen-containing C1-C lacking π electrons60 The cyclic group may be i) group T4, ii) a fused-ring group in which two or more groups T4 are fused together (e.g., combined together), iii) a fused-ring group in which at least one group T4 and at least one group T1 are fused together (e.g., combined together), iv) a fused-ring group in which at least one group T4 and at least one group T3 are fused together (e.g., combined together), or v) a fused-ring group in which at least one group T4, at least one group T1, and at least one group T3 are fused together (e.g., combined together) (e.g., pyrazolyl, imidazole, triazolyl, oxazolyl, isoxazolyl, etc.). Oxadiazole, thiazolyl, isothiazolyl, thiadiazole, benzopyrazolyl, benzimidazolyl, benzooxazolyl, benziisooxazolyl, benzothiazolyl, benzoisothiazolyl, pyridinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxolinyl, benzoquinoxolinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinel, cinolinyl, phthalazinyl, naphthinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiopheneyl, azadibenzothiopheneyl or azadibenzofuranyl),
[0305] Group T1 can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornyl (or, bicyclo[2.2.1]heptane), norbornyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane, or phenyl.
[0306] The group T2 can be furanyl, thiopheneyl, 1H-pyrrolyl, thiopheneyl, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiazolyl, azaboracyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetraazinyl.
[0307] Group T3 can be furanyl, thiophene, 1H-pyrrole, thiophene, or borocyclopentadienyl.
[0308] The group T4 can be 2H-pyrrole, 3H-pyrrole, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, azirthiolyl, aziboranecyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetraazinyl.
[0309] As used in this article, the terms "cyclic group" and "C3-C" are similar to those used in this article.60 "Carbocyclic group", "C1-C" 60 Heterocyclic groups, π-electron-rich C3-C 60 "Cyclic groups" or "nitrogen-containing C1-C groups lacking π electrons" 60 "Cyclic group" refers to a group that is fused (e.g., combined) with a cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, and / or a tetravalent group, etc.) according to the structure of the formula described by the corresponding term. In embodiments, "phenyl" may be benzo[a], phenyl, and / or phenylene, etc., and its structure according to the formula including "phenyl" is readily understood by those skilled in the art.
[0310] In the implementation method, the unit price is C3-C. 60 Carbocyclic groups and monovalent C1-C 60 Examples of heterocyclic groups include C3-C 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl groups, monovalent non-aromatic fused polycyclic groups, and monovalent non-aromatic fused heterocyclic groups, and divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups include C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hypoaryl, divalent non-aromatic fused polycyclic groups and divalent non-aromatic fused heterocyclic groups.
[0311] As used in this article, the term "C1-C" 60 "Alkyl" refers to a monovalent group of a straight-chain or branched aliphatic hydrocarbon having 1 to 60 carbon atoms, and examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl. As used herein, the term "C1-C" is also used. 60 "alkylene" refers to a compound with C1-C2 atoms. 60 Alkyl groups are divalent groups with essentially the same structure.
[0312] As used in this article, the term "C2-C" 60 "Alkenyl" refers to the group formed at C2-C. 60 The alkyl group has at least one carbon-carbon double bond in its main chain (e.g., middle) or end (e.g., terminal) as a monovalent hydrocarbon group, and examples include vinyl, propenyl, and butenyl groups. As used herein, the term "C2-C" is used... 60 "Alkenyl" refers to a group that has a C2-C bond structure. 60 Alkenes are divalent groups with essentially the same structure.
[0313] As used in this article, the term "C2-C" 60 "Alkyne group" refers to the group at C2-C 60 The alkyl group has at least one monovalent hydrocarbon group in its main chain (e.g., middle) or end (e.g., terminal) with a carbon-carbon triple bond, and examples include ethynyl and propynyl groups. As used herein, the term "C2-C" is used... 60 "Alynyl group" refers to a group with a C2-C group. 60 The alkynyl group is a divalent group with essentially the same structure.
[0314] As used in this article, the term "C1-C" 60 "Alkoxy" refers to the compound formed by -OA 101 (where A) 101 For C1-C 60 Alkyl groups are monovalent groups, and examples of them include methoxy, ethoxy and isopropoxy.
[0315] As used in this article, the term "C3-C" 10 "Cycloalkyl" refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornelyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl. As used herein, the term "C3-C" is also relevant. 10 "Cycloalkylene" refers to a compound with C3-C66 atoms. 10 Cycloalkyl groups are divalent groups with essentially the same structure.
[0316] As used in this article, the term "C1-C" 10 "Heterocyclic alkyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms, further comprising at least one heteroatom as a cyclic atom in addition to a carbon atom, and examples include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, and tetrahydrothiophenyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkyl" refers to a compound with C1-C2 atoms. 10 Heterocyclic alkyl groups are divalent groups with essentially the same structure.
[0317] As used in this article, the term "C3-C" 10"Cycloalkenyl" refers to a monovalent monocyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and being non-aromatic (e.g., non-aromatic), and non-limiting examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl. The term "C3-C" is also used herein. 10 "Biopylidene alkenyl" refers to a group that has a similar structure to C3-C4. 10 Cycloalkenyl groups are divalent groups with essentially the same structure.
[0318] As used in this article, the term "C1-C" 10 "Heterocyclic alkenyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms and at least one heteroatom as a cyclic atom in addition to carbon atoms, and at least one double bond in its cyclic structure. C1-C 10 Examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl" refers to a group that has a similar structure to C1-C1. 10 Heterocyclic alkenyl groups are divalent groups with essentially the same structure.
[0319] As used in this article, the term "C6-C" 60 "Aryl" refers to a monovalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms, and as used herein in the term "C6-C". 60 "Arylene" refers to a divalent group that has a carbocyclic aromatic system, which has 6 to 60 carbon atoms. (C6-C) 60 Examples of aryl groups include phenyl, pentanenyl, naphthyl, azulel, indole, acenaphthel, phenanthyl, phenanthryl, anthracene, fluoranthyl, triphenylene, pyrene, 1,2-benzophenanthryl, perylene, pentanenyl, heptanenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubiginyl, myristyl, and ovoleyl. When C6-C 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the two or more rings can fused together.
[0320] As used in this article, the term "C1-C" 60 "Heteroaryl" refers to a monovalent group having a heterocyclic aromatic system, which, in addition to a carbon atom, has at least one heteroatom as a cyclic atom and has 1 to 60 carbon atoms. For example, the term "C1-C" as used herein... 60 "Hypo-heteroaryl" refers to a divalent group possessing a heterocyclic aromatic system. In addition to a carbon atom, a heterocyclic aromatic system has at least one heteroatom as a cyclic atom and contains 1 to 60 carbon atoms. C1-C 60Examples of heteroaryl groups include pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclolinyl, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl and C1-C 60 When each of the heteroaryl groups comprises two or more rings, the two or more rings may fused together (e.g., combined together).
[0321] As used herein, the term "monovalent nonaromatic fused polycyclic group" refers to a monovalent group (e.g., having 8 to 60 carbon atoms) having two or more rings fused together (e.g., combined together), with only carbon atoms as cyclic atoms, and lacking aromaticity (e.g., nonaromatic when considered as a whole) throughout its molecular structure. Examples of monovalent nonaromatic fused polycyclic groups include indenyl, fluorenyl, spirofluorenyl, benzo[a]fluorenyl, indeno[a]phenanthryl, and indeno[a]anthrayl. As used herein, the term "divalent nonaromatic fused polycyclic group" refers to a divalent group having substantially the same structure as a monovalent nonaromatic fused polycyclic group.
[0322] As used herein, the term “monovalent nonaromatic fused heterocyclic group” refers to a monovalent group (e.g., having 1 to 60 carbon atoms) having two or more rings fused together (e.g., combined together), having at least one heteroatom that is not a carbon atom as a cyclic atom, and being nonaromatic (e.g., nonaromatic when considered as a whole) throughout its molecular structure. Examples of monovalent non-aromatic fused heterocyclic groups include pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiophene, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, and thiadiazolyl. Benzopyrazolyl, benzoimidazolyl, benzooxazolyl, benzothiazolyl, benzooxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiophenocarbazolyl, benzothiophenocarbazolyl, benzoindolocarbazolyl, benzocarbazolyl, benzonaphthiophenyl, benzonaphthiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, and benzothiophenodibenzothiophenyl. As used herein, the term "divalent nonaromatic fused heteropolycyclic group" refers to a divalent group having a structure substantially the same as that of a monovalent nonaromatic fused heteropolycyclic group.
[0323] As used in this article, the term "C6-C" 60 "Aryloxy group" refers to -OA 102 (where A) 102 For C6-C 60 Aryl), and as used herein by the term "C6-C" 60 "Arylthio" refers to -SA 103 (where A) 103 For C6-C 60 Aryl).
[0324] As used in this article, the term "R" 10a "refer to:
[0325] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl, cyano, or nitro;
[0326] Each of the following C1-C that was not replaced or was replaced by: 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 Alkoxy groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthioyl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or any combination thereof;
[0327] Each of the following C3-Cs was not replaced or was replaced by the others 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy or C6-C 60 Aryl thiols: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic groups, C1-C60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthioyl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or any combination thereof; or
[0328] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).
[0329] As described in this article, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each can be independently represented as: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkoxy groups; or C3-C groups that are unsubstituted or substituted with the following: 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or any combination thereof.
[0330] As used herein, the term "heteroatom" refers to any atom that is not a carbon atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, and any combination thereof.
[0331] As used herein, “Ph” refers to phenyl, “Me” refers to methyl, “Et” refers to ethyl, and “tert-Bu” or “Bu” refers to ethyl. t "Refers to tert-butyl, and as the term "OMe" is used in this article, it refers to methyl methacrylate (MMA).
[0332] As used in this article, the term "biphenyl" refers to a phenyl group that has been substituted with a phenyl group. In other words, "biphenyl" is a phenyl group with a C6-C2 bond. 60 Aryl groups are substituted phenyl groups.
[0333] As used in this article, the term "terphenyl" refers to a "phenyl group substituted with a biphenyl group." In other words, "terphenyl" is a phenyl group with a C6-C substituted biphenyl group. 60 Aryl-substituted C6-C 60 Aryl groups are substituted phenyl groups.
[0334] Unless otherwise defined, as used herein, * and *' each refer to the binding site of the adjacent atom in the corresponding formula.
[0335] The compounds and luminescent devices according to the embodiments will be described in more detail below with reference to synthesis examples and embodiments. The phrase "using B instead of A" used in the description of the synthesis examples means using the same molar equivalent of B to replace A.
[0336] Example
[0337] Preparation of the main body
[0338] Preparation of Main Body-1
[0339]
[0340]
[0341] Main body-1
[0342] 3 g (0.0097 mol) of N-(naphthyl-2-yl)dibenzo[b,d]furan-4-amine was dissolved in 100 mL of 2-Me-THF in a three-necked flask, and 1.5 M butyl magnesium chloride solution (2-Me-THF solvent) was added to form a mixed solution. The mixed solution was stirred at room temperature for 3 hours.
[0343] Then, 1.39 g (0.0039 mol) of 1,6-dibromopyrene was added to a three-necked flask, and the mixture was stirred at 185 °C for 72 hours. The reaction was then terminated with water, and the solvent was removed by a three-stage extraction process using dichloromethane (MC). The resulting product was subjected to column chromatography using a solvent such as ethyl acetate (EA):hexane (Hex) (1:10) to obtain 1.72 g (yield: 54%) of the main compound-1.
[0344] 1 H-NMR (CDCl3): 7.98-7.92 (6H, m), 7.78-7.28 (26H, m), 7.11 (2H, t), 6.97 (2H, d)
[0345] Preparation of Body-2
[0346]
[0347] Main body-2
[0348] In a nitrogen atmosphere, 11-bromonaphtho[2,1-b]benzofuran (3 g, 0.0101 mol) and (3-(tert-butyl)-10-phenylanthracene-9-yl)boronic acid (4.65 g, 0.01313 mmol) were completely dissolved in 300 mL of toluene in a 500 mL round-bottom flask, and 150 mL of 2 M potassium carbonate aqueous solution was slowly added. Then, tetrakis(triphenylphosphine)palladium (0.47 g, 0.0004 mmol) was added, and the mixture was heated and stirred for 4 hours. After cooling to room temperature, the aqueous layer was removed, and the product was dried over anhydrous magnesium sulfate and subjected to column chromatography using a solvent such as EA:Hex (1:10) to obtain 2.02 g (yield: 38%) of the main compound-2.
[0349] 1 H-NMR (DMSO): 8.54 (1H, d), 8.23 (2H, m), 7.99 (2H, d), 7.82 (1H, d), 7.69-7.27 (15H, m), 1.49 (9H, s)
[0350] Manufacturing of light-emitting devices
[0351] Comparative Example 1
[0352] ITO / Ag / ITO The glass substrate (anode) is cut to a size of 50mm x 50mm x 0.7mm, ultrasonicated with isopropyl alcohol and pure water for 15 minutes each, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes. The glass substrate is then supplied to a vacuum deposition apparatus.
[0353] HAT-CN was vacuum deposited on a glass substrate to form a thickness of [missing information]. The hole injection layer is then formed. Next, NPB, a hole transport compound, is vacuum-deposited onto the hole injection layer to form a thickness of [thickness value missing]. The hole transport layer.
[0354] The compound TCTA was vacuum-deposited onto the hole transport layer to form a thickness of [missing information]. The electron blocking layer.
[0355] Compound 100 (host) and Compound 200 (dopant) were co-deposited on an electron blocking layer at a weight ratio of 97:3 to form a thickness of [missing information]. The first emitter layer. Body-2 (body) and compound 200 (dopant) are co-deposited on the first emitter layer at a weight ratio of 97:3 to form a thickness of... The second emission layer.
[0356] Subsequently, T2T is formed on the second emitter layer to form a thickness of A hole-blocking layer was formed, and TPM-TAZ and Liq were deposited at a weight ratio of 5:5 to form a thickness of [thickness value missing]. The electron transport layer.
[0357] Yb was vacuum deposited onto the electron transport layer to form The thickness is then determined, and AgMg is vacuum deposited on top to form a thickness of [thickness value missing]. The cathode is used, and CPL is deposited on the cathode to form a thickness of [thickness value missing]. The sealing layer completes the manufacturing of the light-emitting device.
[0358] Comparative Example 2
[0359] The light-emitting device was manufactured in essentially the same manner as Comparative Example 1, except that, in forming the emitting layer, the host-2 (host) and compound 200 (dopant) were co-deposited at a weight ratio of 97:3 to form a thickness of [thickness missing]. The first emitter layer is formed by co-depositing body-1 (body) and compound 200 (dopant) on the first emitter layer at a weight ratio of 97:3 to form a thickness of [missing information]. The second emission layer.
[0360] Example 1
[0361] The light-emitting device was manufactured in essentially the same manner as Comparative Example 1, except that, in forming the emitting layer, the host-1 (host) and compound 200 (dopant) were co-deposited at a weight ratio of 97:3 to form a thickness of [thickness missing]. The first emitter layer is formed by co-depositing body-2 (body) and compound 200 (dopant) on the first emitter layer at a weight ratio of 97:3 to form a thickness of The second emission layer.
[0362] Example 2
[0363] The light-emitting device was manufactured in essentially the same manner as Comparative Example 1, except that, in forming the emitting layer, the host-1 (host) and compound 200 (dopant) were co-deposited at a weight ratio of 97:3 to form a thickness of [thickness missing]. The first emitter layer is formed by co-depositing compound 100 (body) and compound 200 (dopant) on the first emitter layer at a weight ratio of 97:3 to form a thickness of [missing information]. The second emission layer.
[0364]
[0365] T1 level simulation
[0366] The T1 energies of compounds 100, host-1, and host-2 were simulated (or calculated) using the Gaussian program ([Structure Optimization]#B3LYP / 6-31G*, [TDDFT]#B3LYP / 6-31G*TD=(50-50, N state=3)) available from Gaussian Inc. The results are shown in Table 1.
[0367] Table 1
[0368] compound T1(eV) 100 1.78 Main body-1 2.02 Main body-2 1.75
[0369] To evaluate the characteristics of the light-emitting devices manufactured according to Comparative Examples 1 and 2 and Examples 1 and 2, at 10 mA / cm 2 The driving voltage, efficiency, and lifespan are measured at current densities.
[0370] Here, the driving voltage and current density of the light-emitting device were measured using a source meter (Keithley Instrument, 2400 series), and the efficiency was measured using a measuring device C9920-2-12 from Hamamatsu Photonics Inc. The results are shown in Table 2.
[0371] Table 2
[0372]
[0373] Referring to Table 2, it can be seen that the light-emitting devices manufactured according to Examples 1 and 2 show superior results in terms of efficiency and lifespan compared to the light-emitting devices manufactured according to Comparative Examples 1 and 2.
[0374] According to one or more embodiments, by preventing or reducing the degradation of the electron blocking layer, the light-emitting device exhibits improved lifespan compared to prior art devices.
[0375] It should be understood that the embodiments described herein should be considered descriptive only and not for limiting purposes. Descriptions of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of this disclosure as defined by the appended claims and their equivalents.
Claims
1. A light-emitting device, comprising: First electrode; The second electrode facing the first electrode, and An interlayer comprising an emission layer is provided between the first electrode and the second electrode. The emission layer comprises: a first emission layer including a first body and a second emission layer including a second body, and The triplet energy T1 of the first entity H1 and the triplet energy T1 of the second entity H2 Satisfies equation (1): T1 H1 -T1 H2 ≥ 0.2eV (1), The first subject is Or, in pyrene derivatives, two of the secondary amine groups replace pyrene, and The second host is an asymmetric anthracene derivative compound.
2. The light-emitting device of claim 1, wherein each of the first emitting layer and the second emitting layer comprises a dopant, and the dopant of the first emitting layer and the dopant of the second emitting layer are the same compound.
3. The light-emitting device as claimed in claim 1, wherein the first emitting layer and the second emitting layer are in contact with each other.
4. The light-emitting device of claim 1, wherein the emitting layer emits blue light.
5. The light-emitting device as claimed in claim 1, wherein the emitting layer is a fluorescent emitting layer.
6. The light-emitting device of claim 1, wherein the interlayer further comprises a hole transport layer and an electron blocking layer between the first electrode and the emitting layer, and The first emitting layer and the electron blocking layer are in contact with each other.
7. The light-emitting device as claimed in claim 1, wherein: The interlayer further includes an electron transport layer and a hole blocking layer between the second electrode and the emitter layer, and The second emission layer and the hole blocking layer are in contact with each other.
8. The light-emitting device as claimed in claim 1, wherein: The first electrode is the anode. The second electrode is a cathode. The first emission layer and the second emission layer are in contact with each other, and Holes provided from the first electrode and electrons provided from the second electrode recombine at the interface between the first emission layer and the second emission layer.
9. The light-emitting device of claim 1, wherein the first body comprises the following compound:
10. The light-emitting device of claim 1, wherein the second body comprises any one of the following compounds:
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