Light emitting element, method for manufacturing light emitting element, and display device

Abstract

A light-emitting element, a method for manufacturing the light-emitting element, and a display device are provided. The light-emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer provided between the first semiconductor layer and the second semiconductor layer, an insulating film that surrounds at least a side surface of the active layer, and a wavelength conversion material provided on at least a part of the insulating film, in which light emitted to the outside and light emitted from the active layer have different center wavelength bands.

Description

Technical Field

[0001] The disclosure relates to light-emitting elements, methods for manufacturing light-emitting elements, and display devices. Background Technology

[0002] The importance of display devices has increased with the development of multimedia. Therefore, various types of display devices are being used, such as organic light-emitting diode (OLED) devices and liquid crystal display (LCD) devices.

[0003] Display panels, such as organic light-emitting display panels or liquid crystal display panels, are devices included in display devices for displaying images. In such display panels, light-emitting elements can be included, and examples of light-emitting diodes (LEDs) include organic light-emitting diodes that use organic materials as fluorescent materials and inorganic light-emitting diodes that use inorganic materials as fluorescent materials. Summary of the Invention

[0004] Technical issues

[0005] The disclosed aspects provide light-emitting elements comprising the same active layer but emitting different light, as well as methods for manufacturing the light-emitting elements.

[0006] The disclosed aspect also provides a display device that can display various colors of light by including the aforementioned light-emitting elements.

[0007] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned herein will be obvious to those skilled in the art based on the following description.

[0008] Technical solution

[0009] According to the disclosed embodiments, the light-emitting element includes: a first semiconductor layer and a second semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; an insulating film surrounding at least a side surface of the active layer; and a wavelength conversion material disposed on at least a portion of the insulating film, wherein light emitted to the outside and light emitted from the active layer have different center wavelengths.

[0010] The active layer can emit first light, the center band of which is the first wavelength, and the wavelength conversion material can convert the first light into second light, the center band of which is the second wavelength.

[0011] The region where the wavelength conversion material is disposed on the insulating film can be at least superimposed with the active layer.

[0012] The center wavelength of the first light can be in the range of 450nm to 495nm, and the wavelength conversion material can include quantum dot materials.

[0013] The center wavelength of the second light can be in the range of 495nm to 570nm or 620nm to 750nm.

[0014] The first semiconductor layer, the active layer, and the second semiconductor layer may be arranged sequentially along a first direction, and at least a portion of the light emitted from the wavelength conversion material may travel in a direction different from the first direction.

[0015] The light-emitting element may also include a diffuser disposed on an insulating film to scatter incident light.

[0016] The light-emitting element may further include an electrode layer disposed on the second semiconductor layer, wherein an insulating film may surround at least a portion of the outer surface of the electrode layer.

[0017] The light-emitting element may also include a ligand bound to the insulating film, wherein the wavelength conversion material may be bound to the ligand.

[0018] According to a disclosed embodiment, a method for manufacturing a light-emitting element includes the following steps: preparing a lower substrate and a semiconductor rod, the semiconductor rod being formed on the lower substrate and including a semiconductor crystal and an insulating film formed on the outer surface of the semiconductor crystal; and forming a wavelength conversion material on the insulating film and separating the semiconductor rod from the lower substrate.

[0019] The semiconductor crystal may include a first semiconductor layer and a second semiconductor layer, as well as an active layer disposed between the first semiconductor layer and the second semiconductor layer, and the light emitted from the active layer and the light emitted outside the wavelength conversion material have different center wavelengths.

[0020] In the step of separating the semiconductor rod, the wavelength conversion material can be attached to the insulating film after the semiconductor rod is separated from the lower substrate.

[0021] The semiconductor rod may also include ligands bound to an insulating film, and wavelength conversion material bound to the ligands.

[0022] According to the disclosed embodiments, the display device includes a first pixel and a second pixel, each of which includes: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; and a light-emitting element disposed between the first electrode and the second electrode. Each light-emitting element includes: a first semiconductor layer and a second semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; an insulating film surrounding at least a side surface of the active layer; and a wavelength conversion material disposed on at least a portion of the insulating film. The light-emitting element may include a first light-emitting element in which light emitted from the active layer and light emitted outside the light-emitting element are the same, and a second light-emitting element in which light emitted from the active layer and light emitted outside the light-emitting element have different center wavelengths.

[0023] The active layer of each of the first and second light-emitting elements can emit first light, the center band of which is a first wavelength. The first light-emitting element can be disposed in a first pixel, and the second light-emitting element can include a first wavelength conversion material and be disposed in a second pixel.

[0024] The center wavelength of the first light can be in the range of 450nm to 495nm, and the wavelength conversion material can include quantum dot materials.

[0025] The first wavelength conversion material can convert the first light into the second light, and the center band of the second light is a second wavelength that is different from the first wavelength.

[0026] Each of the first and second light-emitting elements may further include a scatterer disposed on an insulating film to scatter incident light.

[0027] The display device may further include a third pixel, wherein the light-emitting element may further include a third light-emitting element disposed in the third pixel and including a second wavelength conversion material.

[0028] The active layer of the third light-emitting element can emit first light, and the second wavelength conversion material can convert the first light into third light, the center band of which is a third wavelength that is different from the first wavelength and the second wavelength.

[0029] Details of other embodiments are included in the detailed description and accompanying drawings.

[0030] Beneficial effects

[0031] The light-emitting elements according to the embodiments may all include a wavelength conversion material that converts light emitted from the active layer and can emit light having a central wavelength band different from the central wavelength band of the light emitted from the active layer. The light-emitting elements may include an active layer that emits the same light, but may emit different light to the outside depending on the type of wavelength conversion material.

[0032] Therefore, the display device according to the embodiment can display various colors of light by including the above-described light-emitting elements having the same active layer but emitting different light.

[0033] The effects of the embodiments are not limited to those illustrated above, and many more effects are included in this disclosure. Attached Figure Description

[0034] Figure 1 This is a schematic perspective view of the light-emitting element according to an embodiment.

[0035] Figure 2 yes Figure 1 A magnified view of part A.

[0036] Figure 3 This is a schematic diagram showing light emitted from a light-emitting element according to an embodiment.

[0037] Figure 4 This is a schematic cross-sectional view showing a light-emitting element disposed on an electrode according to an embodiment.

[0038] Figures 5 to 11 This is a schematic diagram illustrating a method for manufacturing a light-emitting element according to an embodiment.

[0039] Figure 12 This is a schematic diagram illustrating a portion of a method for manufacturing a light-emitting element according to another embodiment.

[0040] Figure 13 and Figure 14 This is a schematic diagram illustrating a portion of a method for manufacturing a light-emitting element according to another embodiment.

[0041] Figure 15 This is an enlarged schematic diagram of the insulating film of a light-emitting element according to another embodiment.

[0042] Figure 16 It shows from Figure 15 A schematic diagram of the light emitted by the light-emitting element.

[0043] Figure 17 This is an enlarged schematic diagram of the insulating film of a light-emitting element according to another embodiment.

[0044] Figure 18 This is a schematic diagram of a light-emitting element according to another embodiment.

[0045] Figure 19 This is a schematic diagram of a display device according to an embodiment.

[0046] Figure 20 This is a schematic plan view of the pixels of a display device according to an embodiment.

[0047] Figure 21 This is a schematic cross-sectional view of a display device according to an embodiment.

[0048] Figure 22 It is along Figure 20 The sectional views taken by lines Xa-Xa', Xb-Xb', and Xc-Xc'.

[0049] Figure 23 This is a cross-sectional view of a display device according to another embodiment.

[0050] Figure 24 This is a plan view of the pixels of a display device according to another embodiment.

[0051] Figure 25 It includes Figure 18 A cross-sectional view of a portion of a display device containing light-emitting elements. Detailed Implementation

[0052] The invention will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0053] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer may be directly on said other layer or substrate, or an intervening layer may be present. Throughout the specification, the same reference numerals indicate the same components.

[0054] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the teachings of the invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0055] In the following description, embodiments will be illustrated with reference to the accompanying drawings.

[0056] Figure 1 This is a schematic diagram of a light-emitting element according to an embodiment.

[0057] The light-emitting element 300 can be a light-emitting diode (LED). Specifically, the light-emitting element 300 can be an inorganic LED having a micrometer or nanometer size and made of inorganic materials. When an electric field is formed in a specific direction between two electrodes facing each other, the inorganic LED can be aligned between the two polarized electrodes. The light-emitting element 300 can be aligned between the two electrodes by the electric field formed between them.

[0058] The light-emitting element 300 can extend in one direction. The light-emitting element 300 can be shaped like a rod, wire, tube, etc. In embodiments, the light-emitting element 300 can be shaped like a cylinder or rod. However, the shape of the light-emitting element 300 is not limited to this, and the light-emitting element 300 can also have various shapes including polygonal prisms such as cubes, cuboids, and hexagonal prisms, as well as shapes extending in one direction and having a partially inclined outer surface. Multiple semiconductors included in the light-emitting element 300, which will be described later, can be sequentially arranged or stacked along one direction.

[0059] The light-emitting element 300 may include a semiconductor layer doped with impurities of any conductivity type (e.g., p-type or n-type). The semiconductor layer can receive electrical signals from an external power source and emit light in a specific wavelength band.

[0060] The light-emitting element 300 according to the embodiment can emit light in a specific wavelength band. In the embodiment, the active layer 330 can emit blue light with its center wavelength in the range of 450 nm to 495 nm. However, the center wavelength of blue light is not limited to the above range and should be understood to include all wavelength ranges that can be considered blue within the scope of the disclosure. Furthermore, the light emitted from the active layer 330 of the light-emitting element 300 is not limited to this and can also be green light with its center wavelength in the range of 495 nm to 570 nm or red light with its center wavelength in the range of 620 nm to 750 nm.

[0061] Reference Figure 1 The light-emitting element 300 according to an embodiment may include a first semiconductor layer 310, a second semiconductor layer 320, an active layer 330, an insulating film 380, and a wavelength conversion material 385. Furthermore, the light-emitting element 300 according to an embodiment may also include at least one electrode layer 370. Although in Figure 1 The light-emitting element 300 includes an electrode layer 370, but the disclosure is not limited thereto. In some cases, the light-emitting element 300 may include more electrode layers 370, or the electrode layers 370 may be omitted. Even if the number of electrode layers 370 is changed or another structure is included, the following description of the light-emitting element 300 shall still apply.

[0062] The first semiconductor layer 310 may be, for example, an n-type semiconductor having a first conductivity type. In the example, when the light-emitting element 300 emits light in the blue wavelength band, the first semiconductor layer 310 may include a semiconductor having the chemical formula Al. x Ga y In 1-x-y The semiconductor material is N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), for example, it can be any one or more of n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer 310 may be doped with a first conductivity type dopant, and the first conductivity type dopant may be, for example, Si, Ge, Se, or Sn. In an embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may be in the range of, but is not limited to, 1.5 μm to 5 μm.

[0063] A second semiconductor layer 320 is disposed on the active layer 330, which will be described later. The second semiconductor layer 320 may be, for example, a p-type semiconductor having a second conductivity type. In the example, when the light-emitting element 300 emits light in the blue or green band, the second semiconductor layer 320 may include a semiconductor having the chemical formula Al. x Ga y In 1-x-y The semiconductor material is N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), for example, it can be any one or more of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer 320 can be doped with a second conductivity type dopant, and the second conductivity type dopant can be, for example, Mg, Zn, Ca, or Ba. In an embodiment, the second semiconductor layer 320 can be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 can be, but is not limited to, from 0.05 μm to 0.10 μm.

[0064] Although each of the first semiconductor layer 310 and the second semiconductor layer 320 consists of one layer in the accompanying drawings, the disclosure is not limited thereto. In some cases, depending on the material of the active layer 330, each of the first semiconductor layer 310 and the second semiconductor layer 320 may include more layers, for example, a cladding layer or a tensile strain barrier reduction (TSBR) layer may also be included.

[0065] An active layer 330 is disposed between a first semiconductor layer 310 and a second semiconductor layer 320. The active layer 330 may comprise a material having a single quantum well structure or a multiple quantum well structure. When the active layer 330 comprises a material having a multiple quantum well structure, the active layer 330 may have a structure in which multiple quantum layers and multiple well layers are alternately stacked. The active layer 330 can emit light by the recombination of electron-hole pairs based on electrical signals received through the first semiconductor layer 310 and the second semiconductor layer 320. For example, when the active layer 330 emits light in the blue wavelength range, the active layer 330 may comprise a material such as AlGaN or AlGaInN. Specifically, when the active layer 330 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may comprise a material such as AlGaN or AlGaInN, and the well layers may comprise a material such as GaN or AlInN. In an embodiment, as described above, the active layer 330 may comprise AlGaInN as a quantum layer and AlInN as a well layer to emit blue light in a central wavelength range of 450 nm to 495 nm.

[0066] However, the disclosure is not limited to this. Depending on the wavelength of the light emitted by the active layer 330, the active layer 330 may also have a structure in which semiconductor materials with large bandgap energies and semiconductor materials with small bandgap energies are alternately stacked, or may include different group III to group V semiconductor materials. The light emitted from the active layer 330 is not limited to light in the blue band. In some cases, the active layer 330 may emit light in the red or green band. The length of the active layer 330 may be in the range of, but is not limited to, 0.05 μm to 0.10 μm.

[0067] The light emitted from the active layer 330 can illuminate not only the outer surface of the light-emitting element 300 along the longitudinal direction, but also both side surfaces. The direction of the light emitted from the active layer 330 is not limited to one direction.

[0068] Electrode layer 370 may be an ohmic contact electrode. However, the disclosure is not limited thereto, and electrode layer 370 may also be a Schottky contact electrode. Electrode layer 370 may include a conductive metal. For example, electrode layer 370 may include at least any one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). Furthermore, electrode layer 370 may include an n-type or p-type doped semiconductor material. Electrode layer 370 may include the same material or different materials, but the disclosure is not limited thereto.

[0069] An insulating film 380 surrounds the outer surface of the semiconductor described above. In an embodiment, the insulating film 380 may surround at least the outer surface of the active layer 330 and extend along the direction in which the light-emitting element 300 extends. The insulating film 380 may protect the aforementioned component. For example, the insulating film 380 may surround the side surface of the aforementioned component, but may expose both ends of the light-emitting element 300 in the longitudinal direction.

[0070] In the accompanying drawings, the insulating film 380 extends in the longitudinal direction of the light-emitting element 300 to cover from the first semiconductor layer 310 to the electrode layer 370. However, the disclosure is not limited thereto, and the insulating film 380 may also cover only some of the conductive type semiconductors and the outer surface of the active layer 330, or it may only cover a portion of the outer surface of the electrode layer 370 to partially expose the outer surface of the electrode layer 370. Furthermore, the upper surface of the insulating film 380 may be circular in cross-section in the region adjacent to at least one end of the light-emitting element 300.

[0071] The thickness of the insulating film 380 can be in the range of, but is not limited to, 10 nm to 1.0 μm. The thickness of the insulating film 380 is preferably about 40 nm.

[0072] The insulating film 380 may include a material with insulating properties, such as silicon oxide (SiO2).x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y The insulating film 380 can be aluminum nitride (AlN) or aluminum oxide (Al2O3). Therefore, the insulating film 380 can prevent electrical short circuits that may occur when the active layer 330 directly contacts the electrodes of the light-emitting element 300 through which electrical signals are transmitted. Furthermore, the insulating film 380 can prevent a decrease in luminous efficiency by protecting the outer surface of the light-emitting element 300, including the active layer 330.

[0073] Furthermore, in some embodiments, the outer surface of the insulating film 380 can be treated. When manufacturing the display device 10 (see...) Figure 19 When the light-emitting element 300 is dispersed in a predetermined ink, it can be sprayed onto the electrode and then aligned. Here, the surface of the insulating film 380 can be hydrophobically treated or hydrophilically treated, so that the light-emitting element 300 remains separated from other adjacent light-emitting elements 300 in the ink and does not aggregate with them.

[0074] The light-emitting element 300 according to an embodiment may include a plurality of wavelength conversion materials 385 disposed on an insulating film 380. The wavelength conversion materials 385 can convert or shift incident light having a specific center wavelength into light with different center wavelengths. When light emitted from the active layer 330 of the light-emitting element 300 is incident, the wavelength conversion materials 385 disposed on the insulating film 380 can convert or shift the light into light in another wavelength band and emit light.

[0075] Figure 2 yes Figure 1 A magnified view of part A. Figure 3 This is a schematic diagram showing light emitted from a light-emitting element according to an embodiment.

[0076] Combination Figure 1 Further reference Figure 2 and Figure 3The light-emitting element 300 may include a plurality of wavelength conversion materials 385, and the wavelength conversion materials 385 may cover the outer surface of the insulating film 380. As shown in the figures, the wavelength conversion materials 385 may be disposed on the insulating film 380 to completely cover the insulating film 380, and may be randomly arranged to be in contact with or spaced apart from each other. The wavelength conversion materials 385 may form a layer covering at least a portion of the insulating film 380. However, the disclosure is not limited thereto. The wavelength conversion materials 385 may also be disposed only on a portion of the insulating film 380. As described above, the wavelength conversion materials 385 may be disposed only on the insulating film 380 surrounding at least the outer surface of the active layer 330 to receive light emitted from the active layer 330 of the light-emitting element 300. The region on the insulating film 380 where the wavelength conversion materials 385 are disposed may at least overlap with the active layer 330.

[0077] The insulating film 380 of the light-emitting element 300 surrounds a side surface of the outer surfaces of the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370. Therefore, in this embodiment, the wavelength conversion material 385 disposed on the insulating film 380 can emit light at least in the lateral direction of the light-emitting element 300. Since the light-emitting element 300 extending in one direction includes the wavelength conversion material 385 disposed on the insulating film 380, the light-emitting element 300 can emit light in a specific wavelength band in a direction different from the direction of extension. However, the disclosure is not limited thereto, and the direction of light emitted from the wavelength conversion material 385 of the light-emitting element 300 can be various.

[0078] The light-emitting element 300 can be manufactured by performing a process during manufacturing to form an insulating film 380 and then dispose of a wavelength conversion material 385 on the insulating film 380. The wavelength conversion material 385 can be disposed on the insulating film 380 by forming physical or chemical bonds between the insulating film 380 and the wavelength conversion material 385. In some embodiments, the wavelength conversion material 385 can be synthesized directly on the insulating film 380. This will be described later.

[0079] The wavelength conversion material 385 may be spherical or elliptical, but is not limited to a specific shape. In some embodiments, the wavelength conversion material 385 may be a quantum dot, a quantum rod, or a phosphor. For example, the wavelength conversion material 385 may be a quantum dot that emits light in a specific wavelength band when an electron transitions from the conduction band to the valence band.

[0080] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps depending on their composition and size. Therefore, quantum dots can absorb light and then emit light with a specific wavelength. Examples of semiconductor nanocrystals containing quantum dots include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, and combinations thereof.

[0081] Group II-VI compounds may be selected from: binary compounds, selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; ternary compounds, selected from InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, C dZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0082] III-V group compounds may be selected from: binary compounds, selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds, selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds, selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0083] Group IV-VI compounds may be selected from: binary compounds, selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds, selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds, selected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. Group IV elements may be selected from silicon (Si), germanium (Ge) and mixtures thereof. Group IV compounds may be binary compounds selected from silicon carbide (SiC), silicon germanium (SiGe) and mixtures thereof.

[0084] Here, binary, ternary, or quaternary compounds can be located in the particles at a uniform concentration, or they can be located in the same particles at partially different concentrations. Furthermore, they can have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and shell can have a concentration gradient in which the concentration of the elements in the shell decreases towards the center.

[0085] In some embodiments, quantum dots may have a core-shell structure comprising a core containing nanocrystals as described above and a shell surrounding the core. The shell of each quantum dot may serve as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be monolayer or multilayer. The interface between the core and shell may have a concentration gradient in which the concentration of elements in the shell decreases toward the center. The shell of each quantum dot may be, for example, a metal or nonmetal oxide, a semiconductor compound, or a combination thereof.

[0086] For example, the metal or non-metal oxide can be, but is not limited to, binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 or NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4 or CoMn2O4.

[0087] In addition, the semiconductor compound may be, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, or AlSb.

[0088] When the wavelength conversion material 385 includes quantum dots, the diameter D of the wavelength conversion material 385 is... p 1. The range can be from a few nanometers (nm) to tens of nanometers (nm). For example, the diameter D of the wavelength conversion material 385p 1 can be within the range of 1% to 10% of the diameter of the light-emitting element 300, but is not limited to.

[0089] like Figure 3 As shown, light L with a specific center wavelength can be emitted from the active layer 330 of the light-emitting element 300. The light L emitted from the active layer 330 can travel in a random direction without directionality, and at least a portion of the light L can enter the insulating film 380. Light incident on the insulating film 380 can pass through the insulating film 380 into a wavelength conversion material 385, and the wavelength conversion material 385 can convert the light L emitted from the active layer 330 into light L' with a different center wavelength and emit light L'. In the light-emitting element 300 according to the embodiment, the light L emitted from the active layer 330 and the light L' emitted from the outer surface of the light-emitting element 300 can have different center wavelengths.

[0090] The active layer 330 of the light-emitting element 300 can emit light through the recombination of electron-hole pairs based on electrical signals received from the first semiconductor layer 310 and the second semiconductor layer 320. For example, the active layer 330 may comprise materials such as AlGaN or AlGaInN to emit blue light with a center wavelength in the range of 450 nm to 495 nm. Furthermore, the light-emitting element 300 can emit green or red light depending on the material forming the active layer 330.

[0091] As will be described later, the light-emitting element 300 can be manufactured by an epitaxial growth process. To manufacture a light-emitting element 300 that emits different colors of light, a process can be performed to grow an active layer 330 comprising different component ratios or materials. That is, epitaxial growth processes under different conditions are required to manufacture a light-emitting element 300 comprising an active layer 330 that emits light of a color different from blue light, and the production cost and yield may be low.

[0092] On the other hand, the light-emitting element 300 according to the embodiment includes an active layer 330 that emits light of the same color. However, the light L emitted from the active layer 330 can be converted into light L' with different center wavelengths by changing the wavelength conversion material 385 disposed on the insulating film 380. Even if the active layer 330 emits light of the same center wavelength, the light-emitting element 300 can emit light of different wavelengths depending on the type of wavelength conversion material 385. Therefore, even if only an epitaxial growth process under specific conditions is performed, a light-emitting element 300 emitting various colors of light can be manufactured by adjusting the wavelength conversion material 385.

[0093] In an embodiment, the light-emitting element 300 may include an active layer 330 that emits light with a center wavelength band of 450 nm to 495 nm, and may include a wavelength conversion material 385 that converts blue light into green light with a center wavelength band of 495 nm to 570 nm or red light with a center wavelength band of 620 nm to 750 nm when blue light is incident. However, the disclosure is not limited thereto, and the wavelength conversion material 385 may also convert blue light into light with a different center wavelength band than green or red light.

[0094] As will be described later, the display device 10 according to an embodiment may include an active layer 330 that emits blue light but emits blue light as is or emits light with a different center wavelength. In some embodiments, wavelength conversion materials may be omitted, and the display device 10 may include a first light-emitting element 301 that emits a first light L1 emitted from the active layer 330 to the outside (see...). Figure 21 ), including a first wavelength conversion material to emit the second light L2 to the outside of the second light source 302 (see Figure 21 ) and a third light-emitting element 303 comprising a second wavelength conversion material to emit the third light L3 to the outside (see Figure 21 The display device 10 may include light-emitting elements 300 that contain the same type of active layer 330 but emit different light. Therefore, the display device 10 can display various colors.

[0095] Furthermore, the light emitted from the wavelength conversion material 385 can have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and the color purity and color reproducibility of the colors displayed by the display device 10 including the light-emitting element 300 can be further improved.

[0096] Figure 4 This is a schematic cross-sectional view showing a light-emitting element disposed on an electrode according to an embodiment.

[0097] Reference Figure 4 In an embodiment, the light-emitting element 300 included in the display device 10 may be disposed on a first electrode 210 and a second electrode 220 disposed on a target substrate SUB. The first electrode 210 and the second electrode 220 disposed on the target substrate SUB may be spaced apart and face each other. The light-emitting element 300 may extend in one direction, and the direction in which the light-emitting element 300 extends may be the same as the direction in which the first electrode 210 and the second electrode 220 are spaced apart from each other.

[0098] As shown in the accompanying drawings, the light-emitting element 300 can be disposed between the first electrode 210 and the second electrode 220, such that the extending direction of the light-emitting element 300 is parallel to the upper surface of the target substrate SUB. In some embodiments, the two ends of the light-emitting element 300 can be disposed on the first electrode 210 and the second electrode 220. Although not shown in Figure 4 As shown, however, the light-emitting element 300 can be electrically connected to the first electrode 210 and the second electrode 220, and can receive a predetermined electrical signal from the first electrode 210 and the second electrode 220, so that the active layer 330 emits light L in a specific wavelength band.

[0099] As described above, the light L emitted from the active layer 330 of the light-emitting element 300 can travel in a random direction without directionality. At least a portion of the light L emitted from the active layer 330 can enter the wavelength conversion material 385, and the wavelength conversion material 385 can convert the light L incident from the active layer 330 into light L' with different wavelengths and emit light L'. The light L' emitted from the wavelength conversion material 385 can be emitted in various directions, regardless of the incident direction of the light L emitted from and incident on the active layer 330. That is, the light L' emitted from the wavelength conversion material 385 can travel in various directions, including directions perpendicular to the extension direction of the light-emitting element 300 (i.e., the upward direction above the target substrate SUB). Specifically, the first semiconductor layer 310, the active layer 330, and the second semiconductor layer 320 of the light-emitting element 300 are sequentially arranged in one direction along which the light-emitting element 300 extends. In the light-emitting element 300 according to the embodiment, at least a portion of the light L' emitted to the outside can travel in a direction different from said one direction. Even when the light-emitting element 300 is positioned horizontally on the target substrate SUB, the light-emitting element 300 can still emit light of a specific wavelength in the upward direction above the target substrate SUB.

[0100] Furthermore, since the light L emitted from the active layer 330 of the light-emitting element 300 and the light L' emitted outside the light-emitting element 300 have different center wavelengths, various colors can be displayed using light-emitting elements 300 having the same active layer 330 but including different wavelength conversion materials 385. The display device 10 including the light-emitting element 300 will be described in more detail later with reference to other figures.

[0101] Refer again Figure 1The length h of the light-emitting element 300 can be in the range of 1 μm to 10 μm or 2 μm to 6 μm, and is preferably in the range of 3 μm to 5 μm. Furthermore, the diameter of the light-emitting element 300 can be in the range of 300 nm to 700 nm, and the aspect ratio of the light-emitting element 300 can be 1.2 to 100. However, the disclosure is not limited to this, and the plurality of light-emitting elements 300 included in the display device 10 can also have different diameters depending on the composition of the active layer 330. The diameter of the light-emitting element 300 is preferably about 500 nm.

[0102] A method for manufacturing a light-emitting element 300 according to an embodiment will now be described.

[0103] Figures 5 to 11 This is a schematic diagram illustrating a method for manufacturing a light-emitting element according to an embodiment.

[0104] A method for manufacturing a light-emitting element 300 according to an embodiment may include: on a lower substrate 2000 (see...) Figure 5 Semiconductor rods (RODs) are formed on the surface (see [link]). Figure 9 Each semiconductor rod ROD includes multiple semiconductor layers 310 and 320, an active layer 330, and an insulating film 380; a wavelength conversion material 385 is formed on the insulating film 380, and the semiconductor rod ROD is separated from the lower substrate 2000. The light-emitting element 300 may include a semiconductor rod ROD grown on the lower substrate by an epitaxial growth method. Each semiconductor rod ROD may include a first semiconductor layer 310, a second semiconductor layer 320, an active layer 330, an electrode layer 370, and an insulating film 380. Next, a wavelength conversion material 385 is formed on the insulating film 380 of the semiconductor rod ROD, and the semiconductor rod ROD is separated from the lower substrate to manufacture the light-emitting element 300.

[0105] Specifically, first refer to Figure 5 A lower substrate 2000 and a semiconductor structure 3000 formed on the lower substrate 2000 are prepared. The lower substrate 2000 includes a base substrate 2100, a buffer material layer 2200 formed on the base substrate 2100, and a separation layer 2300 formed on the buffer material layer 2200. The lower substrate 2000 may have a structure in which the base substrate 2100, the buffer material layer 2200, and the separation layer 2300 are sequentially stacked.

[0106] The substrate 2100 may include a sapphire substrate (Al2O3) or a transparent substrate such as glass. However, the disclosure is not limited thereto, and the substrate 2100 may also be made of a conductive substrate such as GaN, SiC, ZnO, Si, GaP, or GaAs. The case where the substrate 2100 is a sapphire substrate (Al2O3) will be described below as an example. The thickness of the substrate 2100 is not specifically limited, but may be, for example, in the range of 400 μm to 1500 μm.

[0107] Multiple semiconductor layers are formed on the substrate 2100. Semiconductor layers grown by epitaxial methods can be formed by growing seed crystals. Here, the method for forming the semiconductor layers can be electron beam deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-mode thermal evaporation, sputtering, or metal-organic chemical vapor deposition (MOCVD), and MOCVD is preferred, but the disclosure is not limited thereto.

[0108] The precursor material used to form the semiconductor layer is not specifically limited to a range of materials typically chosen for forming the target material. For example, the precursor material may include a metal precursor containing an alkyl group such as a methyl group or an ethyl group. For example, the metal precursor may be, but is not limited to, compounds such as trimethylgallium (Ga(CH3)3), trimethylaluminum (Al(CH3)3), or triethyl phosphate ((C2H5)3PO4). The methods and process conditions for forming the semiconductor layer will not be described below, but the sequence of methods for manufacturing the light-emitting element 300 and the stacked structure of each light-emitting element 300 will be described in detail.

[0109] A buffer material layer 2200 is formed on the substrate 2100. Although the buffer material layer 2200 is shown as a single layer, the disclosure is not limited thereto, and multiple layers may also be formed. The buffer material layer 2200 may be configured to reduce the difference in lattice constant between the first semiconductor 3100 and the substrate 2100.

[0110] For example, the buffer material layer 2200 may include an undoped semiconductor and may include a material substantially the same as that of the first semiconductor 3100, but may be an undoped n-type or p-type material. In embodiments, the buffer material layer 2200 may be, but is not limited to, at least any one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. Furthermore, depending on the substrate 2100, the buffer material layer 2200 may be omitted. As an example, a case in which a buffer material layer 2200 comprising an undoped semiconductor is formed on the substrate 2100 will be described.

[0111] A separation layer 2300 may be disposed on the buffer material layer 2200. The separation layer 2300 may comprise a material on which the crystal of the first semiconductor 3100 can be readily grown. The separation layer 2300 may comprise at least one of an insulating material and a conductive material. For example, the separation layer 2300 may comprise silicon oxide (SiO2). x ), silicon nitride (SiN) x ) or silicon oxynitride (SiO) x N y It is used as an insulating material, and includes ITO, IZO, IGO, ZnO, graphene, or graphene oxide as a conductive material. However, the disclosure is not limited thereto.

[0112] The separation layer 2300 can be removed in the operation described later, thus separating the light-emitting element 300 formed on the separation layer 2300 from the lower substrate 2000. The separation layer 2300 can be removed by a chemical separation method (CLO). Therefore, like the surface of the separation layer 2300, the end surface of each light-emitting element 300 can have a flat surface. Furthermore, in the process of etching the semiconductor structure 3000, the separation layer 2300 can be used as an etch stop between the semiconductor structure 3000 and the buffer material layer 2200.

[0113] A semiconductor structure 3000 is disposed on the separation layer 2300. The semiconductor structure 3000 may include a first semiconductor 3100, an active layer 3300, a second semiconductor 3200, and an electrode material layer 3700. Multiple material layers included in the semiconductor structure 3000 can be formed by performing conventional processes as described above, and the layers stacked in the semiconductor structure 3000 may correspond to the layers of each light-emitting element 300. That is, they may include the same materials as the first semiconductor layer 310, active layer 330, second semiconductor layer 320, and electrode layer 370 of each light-emitting element 300, respectively. Each layer of the semiconductor structure 3000 will not be described in detail.

[0114] Next, a semiconductor crystal 3000' is formed by etching the semiconductor structure 3000 in a direction perpendicular to the lower substrate 2000 (see...). Figure 7 ).

[0115] The step of forming a semiconductor crystal 3000' by vertically etching a semiconductor structure 3000 may include an etching process that can be typically performed. In some embodiments, the step of forming a semiconductor crystal 3000' may include: forming an etch mask layer 1600 and an etch pattern layer 1700 on the semiconductor structure 3000; etching the semiconductor structure 3000 according to the pattern of the etch pattern layer 1700; and removing the etch mask layer 1600 and the etch pattern layer 1700.

[0116] Reference Figure 6 The etching mask layer 1600 can be used as a mask for sequentially etching layers of the semiconductor structure 3000. The etching mask layer 1600 may include a first etching mask layer 1610 containing an insulating material and a second etching mask layer 1620 containing a metal.

[0117] The first etch mask layer 1610 may include an oxide or nitride as an insulating material. The insulating material may be, for example, silicon oxide (SiO2). x ), silicon nitride (SiN) x ) or silicon oxynitride (SiO) x N y The thickness of the first etch mask layer 1610 may be in the range of, but is not limited to, 0.5 μm to 1.5 μm.

[0118] A second etch mask layer 1620 is disposed on the first etch mask layer 1610. For example, the second etch mask layer 1620 may be a hard mask layer. The second etch mask layer 1620 may include a material that can be used as a mask for the step of continuously etching the semiconductor structure 3000, and may include a metal such as chromium (Cr). The thickness of the second etch mask layer 1620 may be in the range of, but is not limited to, 30 nm to 150 nm.

[0119] An etch pattern layer 1700 can be formed on the etch mask layer 1600. The etch pattern layer 1700 may include one or more nanopatterns spaced apart from each other. The etch pattern layer 1700 may include polymers, polystyrene spheres, silica spheres, etc., but is not limited to any specific material, as long as it is a material that can form patterns.

[0120] For example, when the etched pattern layer 1700 includes a polymer, conventional methods for forming patterns using polymers can be employed. For example, methods such as photolithography, electron beam lithography, or nanoimprint lithography can be used to form the etched pattern layer 1700 including the polymer.

[0121] In this embodiment, the etched pattern layer 1700 can be formed by nanoimprint lithography, and the nanopattern of the etched pattern layer 1700 may include a nanoimprint resin. The resin may include, but is not limited to, fluorinated monomers, acrylate monomers, dipentaerythritol hexaacrylate, dipropylene glycol diacrylate, poly(ethylene glycol) phenyl ether acrylate, butylated hydroxytoluene (BHT), or 1-hydroxy-cyclohexylphenyl ketone (photoinitiator (Irgacure) 184).

[0122] Next, refer to Figure 7The semiconductor structure 3000 is etched along the etch pattern layer 1700 to form a semiconductor crystal 3000'. The semiconductor crystal 3000' formed by etching the semiconductor structure 3000 may include a first semiconductor layer 310, a second semiconductor layer 320, an active layer 330, and an electrode layer 370 of the light-emitting element 300.

[0123] The etching process for the semiconductor structure 3000 can be performed using conventional methods. For example, the etching process can be dry etching, wet etching, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), etc. Because anisotropic etching is possible, dry etching is suitable for vertical etching. When using the above etching methods, the etchant can be, but is not limited to, Cl2 or O2.

[0124] In the accompanying drawings, the semiconductor structure 3000 is etched in a direction perpendicular to the lower substrate 2000 to form etch holes, thereby forming a semiconductor crystal 3000'. However, the disclosure is not limited to this, and the steps of forming the semiconductor crystal 3000' can also be performed by multiple etching processes. These will not be described in detail.

[0125] Next, a semiconductor rod ROD is formed by forming an insulating film 380 that partially surrounds the outer surface of the semiconductor crystal 3000'.

[0126] Reference Figure 8 and Figure 9 The insulating film 380 can be formed by forming an insulating film 3800 around the outer surface of the semiconductor crystal 3000' and partially removing the insulating film 3800 to expose the upper surface of the electrode layer 370.

[0127] The insulating film 3800 is an insulating material formed on the outer surface of the semiconductor rod ROD, and can be formed by applying the insulating material to the outer surface of the vertically etched semiconductor crystal 3000' or by using an impregnation method. However, the disclosure is not limited thereto. For example, the insulating film 3800 can be formed by atomic layer deposition (ALD).

[0128] The insulating film 3800 can be formed not only on the side and top surfaces of the semiconductor crystals 3000', but also on the separation layer 2300 exposed between the spaced-apart semiconductor crystals 3000'. The insulating film 3800 can be partially removed in subsequent processes to expose the top surface of the electrode layer 370, and simultaneously, the insulating film 3800 disposed on the separation layer 2300 can also be partially removed. The insulating film 3800 can be partially removed by processes such as dry etching or etch-back etching as anisotropic etching.

[0129] Next, refer to Figure 10The semiconductor rod ROD can be separated from the underlying substrate 2000 by removing the separation layer 2300. The step of separating the semiconductor rod ROD may include removing the separation layer 2300 using a chemical separation method (CLO). To remove the separation layer 2300, a wet etching process can be performed using a separation etchant such as hydrofluoric acid (HF) or buffered oxide etchant (BOE), but the disclosure is not limited thereto.

[0130] Next, refer to Figure 11 A wavelength conversion material 385 is formed on the insulating film 380 of the semiconductor rod ROD to manufacture a light-emitting element 300 according to an embodiment. The step of forming the wavelength conversion material 385 on the insulating film 380 is not specifically limited. In some embodiments, the method of manufacturing the light-emitting element 300 may include attaching the wavelength conversion material 385 to the insulating film 380 after separating the semiconductor rod ROD from the lower substrate 2000.

[0131] As described above, the wavelength conversion material 385 may include quantum dot material. For example, when the wavelength conversion material 385 includes quantum dot material, the light-emitting element 300 can be manufactured by immersing a semiconductor rod ROD in a solution S in which the wavelength conversion material 385 is dispersed, such that the wavelength conversion material 385 is attached to the insulating film 380. Here, the process of immersing the semiconductor rod ROD in the solution S can be performed after separating the semiconductor rod ROD from the lower substrate 2000. The semiconductor rod ROD can be dispersed in the solution S, and the light-emitting element 300 can be formed when the wavelength conversion material 385 is attached to the insulating film 380. However, the disclosure is not limited thereto. For example, the semiconductor rod ROD can be immersed in the solution S in a state in which the semiconductor rod ROD is attached to the lower substrate 2000. In this case, after forming the light-emitting element 300 by attaching the wavelength conversion material 385 to the insulating film 380, the light-emitting element 300 can be separated from the lower substrate 2000.

[0132] The exposed outer surfaces of the insulating film 380, electrode layer 370, and first semiconductor layer 310 of the semiconductor rod ROD can contact the solution S in which the wavelength conversion material 385 is dispersed. Unlike the electrode layer 370 and the first semiconductor layer 310, the insulating film 380, which includes insulating material, can form a relatively strong attractive force with the wavelength conversion material 385. Therefore, when the semiconductor rod ROD is immersed in the solution S, most of the wavelength conversion material 385 can adhere to the outer surface of the insulating film 380.

[0133] As will be described later, the display device 10 according to an embodiment may include a light-emitting element 300 comprising the wavelength conversion material 385 described above. The light-emitting element 300 may be prepared in a state in which the light-emitting element 300 is dispersed in a solution S comprising the wavelength conversion material 385, and may be sprayed onto electrodes during the manufacturing process of the display device 10. That is, according to an embodiment, the light-emitting element 300 may be manufactured in a state in which the light-emitting element 300 and the wavelength conversion material 385 are dispersed together in the solution S. However, the disclosure is not limited thereto.

[0134] Furthermore, in some embodiments, the wavelength conversion material 385 can be attached to the insulating film 380 before the semiconductor rod ROD separates from the lower substrate 2000. In some cases, the wavelength conversion material 385 can be synthesized directly on the insulating film 380.

[0135] Figure 12 This is a schematic diagram illustrating a portion of a method for manufacturing a light-emitting element according to another embodiment.

[0136] Reference Figure 12 The process of forming or attaching wavelength conversion material 385 on the insulating film 380 of the semiconductor rod ROD can be performed before separating the semiconductor rod ROD from the lower substrate 2000. Even when the semiconductor rod ROD is immersed in solution S with the semiconductor rod ROD attached to the lower substrate 2000, most of the wavelength conversion material 385 can also attach to the insulating film 380, while forming a relatively strong attraction with the insulating film 380 of the semiconductor rod ROD.

[0137] When the wavelength conversion material 385 is attached to the insulating film 380, the semiconductor rod ROD can be formed into a light-emitting element 300, and when the separation layer 2300 is removed in a subsequent process, the light-emitting element 300 can be separated from the lower substrate 2000. Figure 12 The method of manufacturing the light-emitting element 300 shown is similar to Figure 11 The difference in the method of manufacturing the light-emitting element 300 is that the semiconductor rod ROD is attached to its lower substrate 2000 and immersed in a solution S in which the wavelength conversion material 385 is dispersed. This is the same as described above, so it will not be described in detail.

[0138] Figure 13 and Figure 14 This is a schematic diagram illustrating a portion of a method for manufacturing a light-emitting element according to another embodiment.

[0139] Reference Figure 13 and Figure 14The light-emitting element 300 according to the embodiment can be manufactured by directly synthesizing the wavelength conversion material 385 on the insulating film 380. Apart from synthesizing the wavelength conversion material 385 on the insulating film 380, the method for manufacturing the light-emitting element 300 according to the current embodiment is similar to... Figure 11 The embodiments are the same. Therefore, any redundant descriptions will be omitted below, and the differences will be described in detail.

[0140] According to some embodiments, the wavelength conversion material 385 may include a quantum dot material, and the quantum dot material may have a core / shell structure in which one quantum dot surrounds another quantum dot. The quantum dot material with a core / shell structure can be formed by adsorbing a first precursor 385a, which serves as the material forming the core portion, onto a target surface, and then reacting a second precursor 385b, which serves as the material forming the shell portion, with the first precursor 385a.

[0141] First, such as Figure 13 As shown, a semiconductor rod ROD, including an insulating film 380, is immersed in a first solution S1 in which a first precursor 385a is dispersed. The first precursor 385a can be adsorbed while forming an attractive force with the material included in the insulating film 380 of the semiconductor rod ROD.

[0142] Next, as Figure 14 As shown, a semiconductor rod ROD having a first precursor 385a attached to an insulating film 380 is immersed in a solution S2 in which a second precursor 385b is dispersed, thereby forming a wavelength conversion material 385. The second precursor 385b can react with the first precursor 385a attached to the insulating film 380 of the semiconductor rod ROD in solution S2 to form the wavelength conversion material 385. In this way, after separating the semiconductor rod ROD from the lower substrate 2000, the light-emitting element 300 can be manufactured by directly synthesizing the wavelength conversion material 385 on the insulating film 380. In some embodiments, the semiconductor rod ROD can be cleaned before immersing the semiconductor rod ROD to which the first precursor 385a is adsorbed into the second solution S2. However, the disclosure is not limited thereto.

[0143] The above reference Figure 13 and Figure 14 The method for manufacturing the light-emitting element 300 described above can also be applied in the same way to the above reference. Figure 12 The method described. That is, the light-emitting element 300 can also be manufactured by forming a wavelength conversion material 385, wherein the wavelength conversion material 385 is formed by sequentially immersing the semiconductor rod ROD in a first solution S1 and a second solution S2 before separating the semiconductor rod ROD from the lower substrate 2000. This will not be described in detail.

[0144] The light-emitting element 300 according to the embodiment can be manufactured by the method described above. Each of the light-emitting elements 300 may include an active layer 330 that emits light of a specific wavelength through the same epitaxial growth process, but the wavelength band of the light emitted to the outside can be changed according to the wavelength conversion material 385 disposed on the insulating film 380. According to the embodiment, in the method of manufacturing the light-emitting element 300, even if the same active layer 330 is included by performing only the same epitaxial growth process, light-emitting elements 300 that emit light of various colors can be manufactured by changing the type of wavelength conversion material 385. Therefore, the manufacturing process cost of the light-emitting element 300 can be reduced, and the yield can be increased.

[0145] The light-emitting element 300 according to other embodiments will now be described.

[0146] Figure 15 This is an enlarged schematic diagram of the insulating film of a light-emitting element according to another embodiment. Figure 16 It shows from Figure 15 A schematic diagram of the light emitted by the light-emitting element.

[0147] Reference Figure 15 and Figure 16 The light-emitting element 300 according to the embodiment may further include a diffuser 386 disposed on the insulating film 380. Besides the light-emitting element 300 including the diffuser 386, the light-emitting element 300 according to the current embodiment and... Figure 1 The light-emitting element 300 is the same. Therefore, any redundant descriptions will be omitted below, and the differences will be described in detail.

[0148] The scatterer 386 according to an embodiment may include a material capable of scattering at least a portion of the incident light. For example, the scatterer 386 may be light-scattering particles. In some embodiments, the scatterer 386 may be metal oxide particles or organic particles. The metal oxide may be, for example, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and the organic particles may be made of, for example, acrylic resin or polyurethane resin. The scatterer 386 according to an embodiment may have a diameter D larger than that of the wavelength conversion material 385. p The diameter D of 1 p 2, but disclosure is not limited to this.

[0149] Scatterer 386 can scatter light in random directions, regardless of the incident direction of light L', and essentially does not change the wavelength of light L' emitted from wavelength conversion material 385. For example... Figure 16As shown, at least a portion of the light L emitted from the active layer 330 of the light-emitting element 300 can enter the wavelength conversion material 385, and the wavelength conversion material 385 can convert the light L into light L' with different center wavelengths and emit light L'. The light L' emitted from the wavelength conversion material 385 can travel in random directions regardless of the incident direction of the light L incident from the active layer 330, and at least a portion of the light L' can enter the scatterer 386. The scatterer 386 can scatter the light L' emitted from the wavelength conversion material 385 and incident in random directions, regardless of the incident direction of the light L'. Therefore, the light-emitting element 300 according to the embodiment can emit light L' from the side surface of the insulating film 380 in random directions, and the lateral visibility of the light L' emitted from the light-emitting element 300 can be improved.

[0150] Figure 17 This is an enlarged schematic diagram of the insulating film of a light-emitting element according to another embodiment.

[0151] Reference Figure 17 According to the embodiment, the light-emitting element 300 may further include a ligand 387 bonded to the insulating film 380, and the wavelength conversion material 385 may be bonded to the ligand 387. In addition to the light-emitting element 300 including the ligand 387 bonded to the insulating film 380, the light-emitting element 300 according to the current embodiment and... Figure 1 The light-emitting element 300 is the same. Therefore, any redundant descriptions will be omitted below, and the differences will be described in detail.

[0152] As described above, the outer surface of the insulating film 380 can be treated. The surface of the insulating film 380 can be treated such that the light-emitting element 300 remains separate from other light-emitting elements 300 and does not aggregate with other light-emitting elements 300 in the ink. However, in some embodiments, the surface of the insulating film 380 can be treated to bind the ligand 387 to the insulating film 380 of the light-emitting element 300.

[0153] The wavelength conversion material 385 of the light-emitting element 300 can be physically or chemically adsorbed and disposed on the insulating film 380. When the amount of wavelength conversion material 385 disposed on the insulating film 380 is insufficient, at least a portion of the light emitted from the active layer 330 of the light-emitting element 300 can be emitted to the outside without entering the wavelength conversion material 385. In this case, the light emitted from the active layer 330 and the light converted by the wavelength conversion material 385 will mix and be emitted from the light-emitting element 300, and the color purity of the light-emitting element 300 will decrease. Since the light-emitting element 300 according to the embodiment also includes a ligand 387 bonded to the insulating film 380 and capable of forming chemical bonds with the wavelength conversion material 385, the density of the wavelength conversion material 385 disposed on the insulating film 380 can be increased.

[0154] There is no specific limitation on the type of ligand 387. Although not specifically shown in the figures, in some embodiments, ligand 387 may include a first functional group capable of forming a chemical bond with a material included in the insulating film 380 and a second functional group capable of forming a chemical bond with the wavelength conversion material 385. However, the disclosure is not limited thereto.

[0155] The structure of the light-emitting element 300 is not limited to Figure 1 The structure shown is different, and the light-emitting element 300 may also have other structures.

[0156] Figure 18 This is a schematic diagram of a light-emitting element according to another embodiment.

[0157] Reference Figure 18 The light-emitting element 300' can extend in one direction, but can have partially inclined side surfaces. That is, the light-emitting element 300' according to the embodiment can have a partially conical shape. In the light-emitting element 300', multiple layers can not be stacked in one direction, but each layer can be formed as an outer surface surrounding another layer. Apart from the partial difference in the shape of each layer, Figure 18 The light-emitting element 300' and Figure 1 The light-emitting element 300 is the same. Furthermore, the length h' of the light-emitting element 300' is the same as... Figure 1 The length h of the light-emitting elements 300 may be substantially the same or different. Therefore, any redundant descriptions will be omitted below, and the differences will be described in detail.

[0158] According to an embodiment, the first semiconductor layer 310' may extend in one direction and have two ends that are inclined toward the center. Figure 18 The first semiconductor layer 310' may have a rod-shaped or cylindrical body and conical ends formed on the upper and lower parts of the body, respectively. The upper part of the body may have a steeper slope than its lower part.

[0159] An active layer 330' surrounds the outer surface of the main body of the first semiconductor layer 310'. The active layer 330' may have an annular shape extending in one direction. The active layer 330' may not be formed on the upper and lower ends of the first semiconductor layer 310'. That is, the active layer 330' may only contact the parallel side surfaces of the first semiconductor layer 310'.

[0160] The second semiconductor layer 320' surrounds the outer surface of the active layer 330' and the upper end of the first semiconductor layer 310'. The second semiconductor layer 320' may include an annular body extending in one direction and an upper end with an inclined side surface. That is, the second semiconductor layer 320' can directly contact the parallel side surface of the active layer 330' and the inclined upper end of the first semiconductor layer 310'. However, the second semiconductor layer 320' is not formed on the lower end of the first semiconductor layer 310'.

[0161] The electrode layer 370' surrounds the outer surface of the second semiconductor layer 320'. The shape of the electrode layer 370' can be substantially the same as the shape of the second semiconductor layer 320'. That is, the electrode layer 370' can contact the entire outer surface of the second semiconductor layer 320'.

[0162] The insulating film 380' may surround the outer surfaces of the electrode layer 370' and the first semiconductor layer 310'. The insulating film 380' may not only directly contact the electrode layer 370', but also directly contact the lower end of the first semiconductor layer 310' and the exposed lower ends of the active layer 330' and the second semiconductor layer 320'.

[0163] As described above, the light-emitting element 300 may include a wavelength conversion material 385 or a diffuser 386 to convert the light L emitted from the active layer 330 into light L' with different wavelengths and emit light L'. Furthermore, according to an embodiment, the display device 10 may include at least one light-emitting element 300 to display light in a specific wavelength band.

[0164] Figure 19 This is a schematic plan view of a display device according to an embodiment.

[0165] Reference Figure 19 The display device 10 displays moving or still images. The display device 10 can refer to any electronic device that provides a display screen. Examples of display devices 10 may include televisions, laptop computers, monitors, billboards, Internet of Things (IoT) devices, mobile phones, smartphones, tablet PCs, electronic watches, smartwatches, watch phones, head-mounted displays, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, game consoles, digital cameras, and camcorders, all of which provide a display screen.

[0166] Display device 10 includes a display panel that provides a display screen. Examples of display panels may include light-emitting diode (LED) display panels, organic light-emitting diode (OLED) display panels, quantum dot (QD) display panels, plasma display panels, and field emission display panels. An example of using an LED display panel as the display panel will be described below, but the disclosure is not limited to this, and other display panels may be used, provided that the same technical spirit is applicable.

[0167] The shape of the display device 10 can be modified in various ways. For example, the display device 10 can have various shapes, such as a horizontal rectangle, a vertical rectangle, a square, a quadrilateral with rounded corners (vertices), other polygons, and a circle. The shape of the display area DA of the display device 10 can also be similar to the overall shape of the display device 10. Figure 19 In the display device 10 and the display area DA, both have a horizontally elongated rectangular shape.

[0168] The display device 10 may include a display area DA and a non-display area NDA. The display area DA may be the area in which a screen can be displayed, and the non-display area NDA may be the area in which a screen is not displayed. The display area DA may also be referred to as the active area, and the non-display area NDA may also be referred to as the inactive area.

[0169] The display area DA can generally occupy the center of the display device 10. The display area DA can include multiple pixels PX. The pixels PX can be arranged in both row and column directions. Each of the pixels PX can be rectangular or square in a plan view. However, the disclosure is not limited to this, and each of the pixels PX can also have a rhombus shape, with each side of the rhombus shape being inclined relative to the first direction DR1. Each of the pixels PX can display a specific color by including one or more light-emitting elements 300 that emit light of a specific wavelength.

[0170] Figure 20 This is a schematic plan view of the pixels of a display device according to an embodiment.

[0171] Reference Figure 20 Each of the pixels PX can include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 can emit light of a first color, the second sub-pixel PX2 can emit light of a second color, and the third sub-pixel PX3 can emit light of a third color. The first color can be blue, the second color can be green, and the third color can be red. However, the disclosure is not limited to this, and sub-pixels PXn can also emit light of the same color. Furthermore, although in Figure 20 A pixel PX comprises three sub-pixels PXn, but this is not the only possibility, and a pixel PX may also comprise more sub-pixels PXn.

[0172] It will be understood that although the terms first, second, third, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. That is, elements defined as first, second, etc., are not necessarily limited to a specific structure or location, and in some cases, other numerical terms may be assigned. Thus, the numbers assigned to each element can be described by the accompanying drawings and the following description, and without departing from the disclosed teachings, the first element discussed below may be referred to as the second element.

[0173] Each sub-pixel PXn of the display device 10 may include a region defined as an emission region EMA. A first sub-pixel PX1 may include a first emission region EMA1, a second sub-pixel PX2 may include a second emission region EMA2, and a third sub-pixel PX3 may include a third emission region EMA3. The emission region EMA may be defined as a region in which a light-emitting element 300 included in the display device 10 is disposed to emit light of a specific wavelength. Each of the light-emitting elements 300 may include an active layer 330, and the active layer 330 may emit light of a specific wavelength without directionality. That is, light emitted from the active layer 330 of each light-emitting element 300 may illuminate the light-emitting element 300 in the lateral direction and towards both ends of the light-emitting element 300. The emission region EMA of each sub-pixel PXn may include a region in which a light-emitting element 300 is disposed and a region adjacent to the light-emitting element 300 from which light emitted from the light-emitting element 300 is output. Furthermore, the disclosure is not limited thereto, and the emission region EMA may also include a region from which light emitted from the light-emitting element 300 is output after being reflected or refracted by other components. Multiple light-emitting elements 300 can be disposed in each sub-pixel PXn, and the area where the light-emitting elements 300 are disposed and the area adjacent to the area can form an emission area EMA.

[0174] Although not shown in the accompanying drawings, each sub-pixel PXn of the display device 10 may include a non-emissive region defined as the area other than the emitting region EMA. Since light emitted from the light-emitting element 300 does not reach the non-emissive region, the non-emissive region can be an area in which no light-emitting element 300 is disposed and no light is emitted from it.

[0175] Each sub-pixel PXn of the display device 10 may include a plurality of electrodes 210 and 220, a light-emitting element 300, and a plurality of embankments 410, 420, and 430 (see...). Figure 20 and Figure 22 ) and one or more insulating layers 510, 520 and 550 (see Figure 22 ).

[0176] Electrodes 210 and 220 can be electrically connected to the light-emitting element 300 and can receive a predetermined voltage, enabling the light-emitting element 300 to emit light of a specific wavelength. Furthermore, at least a portion of each of electrodes 210 and 220 can be used to form an electric field in the sub-pixel PXn to align the light-emitting element 300.

[0177] Electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. In an embodiment, the first electrode 210 may be a pixel electrode separate for each sub-pixel PXn, and the second electrode 220 may be a common electrode commonly connected along each sub-pixel PXn. Either the first electrode 210 or the second electrode 220 may be the anode of the light-emitting element 300, and the other may be the cathode of the light-emitting element 300. However, the disclosure is not limited thereto, and the situation may also be reversed.

[0178] Each of the first electrode 210 and the second electrode 220 may include an electrode trunk portion 210S or 220S extending in a first direction DR1 and at least one electrode branch portion 210B or 220B extending from the electrode trunk portion 210S or 220S and branching in a second direction DR2 intersecting the first direction DR1.

[0179] The first electrode 210 may include a first electrode trunk portion 210S extending in a first direction DR1 and at least one first electrode branch portion 210B branching from the first electrode trunk portion 210S and extending in a second direction DR2.

[0180] The first electrode backbone 210S of any pixel may have two ends terminating between sub-pixels PXn and spaced apart from the ends of adjacent first electrode backbone 210S, but may be located substantially on the same straight line as the first electrode backbone 210S of adjacent sub-pixels in the same row (e.g., adjacent in the first direction DR1). Since the two ends of the first electrode backbone 210S respectively disposed in sub-pixels PXn are spaced apart from each other, different electrical signals can be transmitted to each first electrode branch 210B, and each first electrode branch 210B can be driven independently.

[0181] The first electrode branch portion 210B may branch from at least a portion of the first electrode trunk portion 210S and extend in the second direction DR2 to terminate at a position spaced apart from the second electrode trunk portion 220S facing the first electrode trunk portion 210S.

[0182] The second electrode 220 may include a second electrode trunk portion 220S and a second electrode branch portion 220B. The second electrode trunk portion 220S extends in a first direction DR1 and is spaced apart from the first electrode trunk portion 210S in a second direction DR2, facing the first electrode trunk portion 210S. The second electrode branch portion 220B branches from the second electrode trunk portion 220S and extends in the second direction DR2. The other end of the second electrode trunk portion 220S may be connected to the second electrode trunk portion 220S of another adjacent sub-pixel PXn in the first direction DR1. That is, unlike the first electrode trunk portion 210S, the second electrode trunk portion 220S may extend in the first direction DR1 to intersect with the sub-pixel PXn. The second electrode trunk portion 220S intersecting with the sub-pixel PXn may be connected to the peripheral portion of the display area DA in which each pixel PX or sub-pixel PXn is disposed, or to a portion extending in one direction in the non-display area NDA.

[0183] The second electrode branch portion 220B can be spaced apart from the first electrode branch portion 210B to face the first electrode branch portion 210B, and can terminate at a position spaced apart from the first electrode trunk portion 210S. The second electrode branch portion 220B can be connected to the second electrode trunk portion 220S, and in each sub-pixel PXn, its end in the extending direction can be spaced apart from the first electrode trunk portion 210S.

[0184] Although in the accompanying drawings two first electrode branch portions 210B are disposed in each sub-pixel PXn and a second electrode branch portion 220B is disposed between the two first electrode branch portions 210B, the disclosure is not limited thereto. Furthermore, the first electrode 210 and the second electrode 220 do not necessarily extend in one direction and can be arranged in various structures. For example, the first electrode 210 and the second electrode 220 may be partially bent or folded, or either the first electrode 210 or the second electrode 220 may surround the other electrode. There are no specific limitations on the structure or shape of the first electrode 210 and the second electrode 220, as long as the first electrode 210 and the second electrode 220 are at least partially spaced apart to face each other, such that a space can be formed between the first electrode 210 and the second electrode 220 in which the light-emitting element 300 will be disposed.

[0185] Furthermore, the first electrode 210 and the second electrode 220 can be electrically connected to the circuit element layer PAL of the display device 10 (see [link to PAL]) via contact holes (e.g., first electrode contact hole CNTD and second electrode contact hole CNTS), respectively. Figure 22In the accompanying drawings, a first electrode contact hole CNTD is formed in the first electrode backbone portion 210S of each sub-pixel PXn, and only one second electrode contact hole CNTS is formed in a second electrode backbone portion 220S that intersects with the sub-pixel PXn. However, the disclosure is not limited thereto. In some cases, the second electrode contact hole CNTS may also be formed in each sub-pixel PXn.

[0186] The embankments 410, 420, and 430 may include an outer embankment 430 disposed at the boundary between sub-pixels PXn and a plurality of inner embankments 410 and 420 disposed adjacent to the center of each sub-pixel PXn and respectively below electrodes 210 and 220. Although the inner embankments 410 and 420 are not shown in the figures, the first inner embankment 410 and the second inner embankment 420 may be disposed below the first electrode branch portion 210B and the second electrode branch portion 220B, respectively. These will be described later with reference to other figures.

[0187] The outer dam 430 can be disposed at the boundary between sub-pixels PXn. The respective ends of the plurality of first electrode trunk portions 210S can be spaced apart from each other by the outer dam 430. The outer dam 430 can extend in the second direction DR2 to be located at the boundary between sub-pixels PXn arranged in the first direction DR1. However, the disclosure is not limited thereto, and the outer dam 430 can also extend in the first direction DR1 to be located at the boundary between sub-pixels PXn arranged in the second direction DR2. The outer dam 430 can comprise the same material as the inner dams 410 and 420, and can be formed simultaneously with the inner dams 410 and 420 in a single process.

[0188] Multiple light-emitting elements 300 may be disposed between the first electrode 210 and the second electrode 220. As shown in the accompanying drawings, the light-emitting elements 300 may be disposed between the first electrode branch portion 210B and the second electrode branch portion 220B. At least some of the ends of the light-emitting elements 300 may be electrically connected to the first electrode 210, and the other ends may be electrically connected to the second electrode 220. The two ends of each light-emitting element 300 may be located on the first electrode branch portion 210B and the second electrode branch portion 220B, respectively, but the disclosure is not limited thereto. In some cases, the light-emitting elements 300 may be disposed between the first electrode 210 and the second electrode 220 such that the two ends do not overlap with the first electrode 210 and the second electrode 220.

[0189] The light-emitting elements 300 can be spaced apart from each other between electrodes 210 and 220 and can be aligned substantially parallel to each other. There is no specific limitation on the gap between the light-emitting elements 300. In some cases, multiple light-emitting elements 300 can be arranged adjacent to each other to form a group, and multiple other light-emitting elements 300 can form a group at a distance from the aforementioned group, or can be positioned and aligned in a non-uniform density in one direction. Furthermore, in embodiments, the light-emitting elements 300 can extend in one direction, and each electrode (e.g., the first electrode branch 210B and the second electrode branch 220B) along its extending direction and the light-emitting element 300 along its extending direction can be substantially perpendicular to each other. However, the disclosure is not limited to this, and the light-emitting elements 300 can also extend in a direction that is not perpendicular to but inclined to the first electrode branch 210B and the second electrode branch 220B along their extending direction.

[0190] Even if the light-emitting element 300 includes the same active layer 330, the light-emitting element 300 according to the embodiment may also include a wavelength conversion material 385 to emit light of different wavelengths. The display device 10 according to the embodiment may include a first light-emitting element 301, a second light-emitting element 302, and a third light-emitting element 303. In the first light-emitting element 301, the light emitted from the active layer 330 and the light emitted outside the light-emitting element 300 are the same. In the second light-emitting element 302 and the third light-emitting element 303, the light emitted from the active layer 330 and the light emitted outside the light-emitting element 300 have different center wavelengths.

[0191] Figure 21 This is a schematic cross-sectional view of a display device according to an embodiment.

[0192] Reference Figure 21 The display device 10 may include a first light-emitting element 301 disposed in a first sub-pixel PX1, a second light-emitting element 302 disposed in a second sub-pixel PX2, and a third light-emitting element 303 disposed in a third sub-pixel PX3.

[0193] Each of the first light-emitting elements 301 may include an active layer 330 that emits first light L1 whose center wavelength is a first wavelength, but the wavelength conversion material 385 may not be disposed on the insulating film 380. That is, in each of the first light-emitting elements 301, light emitted from the active layer 330 can be emitted outside the first light-emitting element 301 without being converted by the wavelength conversion material 385. However, the disclosure is not limited thereto, and a diffuser 386 may be disposed on the insulating film 380 of each of the first light-emitting elements 301. Therefore, the first light L1 of the first light-emitting element 301 can be output from the first sub-pixel PX1.

[0194] Each of the second light-emitting elements 302 may include an active layer 330 for emitting a first light L1, but may also include a first wavelength conversion material disposed on an insulating film 380 and converting the first light L1 into a second light L2, the center band of which is a second wavelength different from the first wavelength. In each of the second light-emitting elements 302, the first light L1 emitted from the active layer 330 may be incident on the first wavelength conversion material and converted into the second light L2, and then emitted outside the second light-emitting element 302. Therefore, the second light L2 of the second light-emitting element 302 can be output from the second sub-pixel PX2.

[0195] Each of the third light-emitting elements 303 may include an active layer 330 that emits first light L1, but may also include a second wavelength conversion material disposed on an insulating film 380 and converting the first light L1 into third light L3, the center band of which is a third wavelength different from the first and second wavelengths. In each of the third light-emitting elements 303, the first light L1 emitted from the active layer 330 may be incident on the second wavelength conversion material and converted into third light L3, and then emitted outside the third light-emitting element 303. Therefore, the third light L3 of the third light-emitting element 303 may be output from the third sub-pixel PX3. In some embodiments, both the first and second wavelength conversion materials may be composed of quantum dots. In this case, the particle size of the quantum dots constituting the first wavelength conversion material may be different from the particle size of the quantum dots constituting the second wavelength conversion material, but the disclosure is not limited thereto.

[0196] The display device 10 according to an embodiment may include a first light-emitting element 301, a second light-emitting element 302, and a third light-emitting element 303. The first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 each include an active layer 330 that emits the same light but emits different colors of light to the outside. Each of the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 may each include an active layer 330 that emits a first light L1. The first light L1 is converted into a second light L2 or a third light L3 by a wavelength conversion material 385 disposed on an insulating film 380, and then emitted as the second light L2 or the third light L3. Therefore, by changing the type of wavelength conversion material 385 disposed on the insulating film 380, the display device 10 can use light-emitting elements 300 including the same active layer 330 to display various colors of light.

[0197] In some embodiments, the first light L1 may be blue light with a center wavelength in the range of 450 nm to 495 nm, the second light L2 may be green light with a center wavelength in the range of 495 nm to 570 nm, and the third light L3 may be red light with a center wavelength in the range of 620 nm to 750 nm. However, the disclosure is not limited thereto. The first light L1, the second light L2, and the third light L3 may be different colors of light or may be the same color of light, and their center wavelengths may also be different from the ranges described above.

[0198] Furthermore, although not shown in the accompanying drawings, the display device 10 may include a first insulating layer 510 that at least partially covers the first electrode 210 and the second electrode 220.

[0199] A first insulating layer 510 may be disposed in each sub-pixel PXn of the display device 10. The first insulating layer 510 may substantially completely cover each sub-pixel PXn and may extend to other adjacent sub-pixels PXn. The first insulating layer 510 may at least partially cover the first electrode 210 and the second electrode 220. Although not explicitly stated... Figure 20 As shown, however, the first insulating layer 510 may be configured to partially expose the first electrode 210 and the second electrode 220, specifically, partially exposing the first electrode branch portion 210B and the second electrode branch portion 220B.

[0200] In addition to the first insulating layer 510, the display device 10 may include a circuit element layer PAL located beneath each of the electrodes 210 and 220, and a second insulating layer 520 that at least partially covers each electrode 210 or 220 and the light-emitting element 300 (see [link to documentation]). Figure 22 ) and passivation layer 550 (see Figure 22 Now refer to Figure 22 The structure of the display device 10 is described in detail.

[0201] Figure 22 It is along Figure 20 The sectional views taken by lines Xa-Xa', Xb-Xb', and Xc-Xc'.

[0202] Figure 22 The cross-section of only the first sub-pixel PX1 is shown, but the same illustration can be applied to other pixels PX or sub-pixels PXn. Figure 22 A cross-section from one end of the light-emitting element 300 to the other end is shown.

[0203] Reference Figure 20 and Figure 22The display device 10 may include a circuit element layer PAL and a light-emitting layer EML. The circuit element layer PAL may include a substrate 110, a buffer layer 115, a light-blocking layer BML, a first transistor 120 and a second transistor 140, etc., and the light-emitting layer EML may include a plurality of electrodes 210 and 220 disposed on the first transistor 120 and the second transistor 140, a light-emitting element 300, a plurality of insulating layers 510, 520 and 550, etc.

[0204] The substrate 110 can be an insulating substrate. The substrate 110 can be made of an insulating material such as glass, quartz, or polymer resin. In addition, the substrate 110 can be a rigid substrate, but it can also be a flexible substrate that can be bent, folded, rolled, etc.

[0205] A light-blocking layer BML can be disposed on the substrate 110. The light-blocking layer BML may include a first light-blocking layer BML1 and a second light-blocking layer BML2. The first light-blocking layer BML1 may be electrically connected to the first drain electrode 123 of the first transistor 120, which will be described later. The second light-blocking layer BML2 may be electrically connected to the second drain electrode 143 of the second transistor 140.

[0206] The first light-blocking layer BML1 and the second light-blocking layer BML2 are respectively stacked with the first active material layer 126 of the first transistor 120 and the second active material layer 146 of the second transistor 140. The first light-blocking layer BML1 and the second light-blocking layer BML2 may include a light-blocking material to prevent light from entering the first active material layer 126 and the second active material layer 146. For example, the first light-blocking layer BML1 and the second light-blocking layer BML2 may be made of an opaque metallic material that blocks light transmission. However, the disclosure is not limited thereto. In some cases, the light-blocking layer BML may be omitted.

[0207] A buffer layer 115 is disposed on the light-blocking layer BML and the substrate 110. The buffer layer 115 can completely cover the substrate 110 and the light-blocking layer BML. The buffer layer 115 can prevent the diffusion of impurity ions, prevent the penetration of moisture or external air, and perform a surface planarization function. In addition, the buffer layer 115 can insulate the light-blocking layer BML from the first active material layer 126 and the second active material layer 146.

[0208] A semiconductor layer is disposed on the buffer layer 115. The semiconductor layer may include a first active material layer 126 of the first transistor 120, a second active material layer 146 of the second transistor 140, and an auxiliary layer 163. The semiconductor layer may include polycrystalline silicon, monocrystalline silicon, oxide semiconductor, etc.

[0209] The first active material layer 126 may include a first doped region 126a, a second doped region 126b, and a first channel region 126c. The first channel region 126c may be disposed between the first doped region 126a and the second doped region 126b. The second active material layer 146 may include a third doped region 146a, a fourth doped region 146b, and a second channel region 146c. The second channel region 146c may be disposed between the third doped region 146a and the fourth doped region 146b. The first active material layer 126 and the second active material layer 146 may include polycrystalline silicon. Polycrystalline silicon can be formed by crystallizing amorphous silicon. Examples of crystallization methods may include, but are not limited to, rapid thermal annealing (RTA), solid-state crystallization (SPC), excimer laser annealing (ELA), metal-induced crystallization (MILC), and sequential lateral solidification (SLS). Alternatively, the first active material layer 126 and the second active material layer 146 may include monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, etc. The first doped region 126a, the second doped region 126b, the third doped region 146a, and the fourth doped region 146b can be regions of the first active material layer 126 and the second active material layer 146 that are doped with impurities. However, the disclosure is not limited thereto.

[0210] A first gate insulating layer 150 is disposed on the semiconductor layer. The first gate insulating layer 150 may completely cover the buffer layer 115 and the semiconductor layer. The first gate insulating layer 150 may be used as the gate insulating layer for each of the first transistor 120 and the second transistor 140.

[0211] A first conductive layer is disposed on a first gate insulating layer 150. The first conductive layer disposed on the first gate insulating layer 150 may include a first gate electrode 121 disposed on a first active material layer 126 of the first transistor 120, a second gate electrode 141 disposed on a second active material layer 146 of the second transistor 140, and power wiring 161 disposed on an auxiliary layer 163. The first gate electrode 121 may be stacked with a first channel region 126c of the first active material layer 126, and the second gate electrode 141 may be stacked with a second channel region 146c of the second active material layer 146.

[0212] An interlayer insulating film 170 is disposed on the first conductive layer. The interlayer insulating film 170 can be used as an interlayer insulating film. In addition, the interlayer insulating film 170 may include an organic insulating material and perform a surface planarization function.

[0213] The second conductive layer is disposed on the interlayer insulating film 170. The second conductive layer includes the first drain electrode 123 and the first source electrode 124 of the first transistor 120, the second drain electrode 143 and the second source electrode 144 of the second transistor 140, and the power electrode 162 disposed on the power wiring 161.

[0214] The first drain electrode 123 and the first source electrode 124 can contact the first doped region 126a and the second doped region 126b of the first active material layer 126, respectively, through contact holes penetrating the interlayer insulating film 170 and the first gate insulating layer 150. The second drain electrode 143 and the second source electrode 144 can contact the third doped region 146a and the fourth doped region 146b of the second active material layer 146, respectively, through contact holes penetrating the interlayer insulating film 170 and the first gate insulating layer 150. In addition, the first drain electrode 123 and the second drain electrode 143 can be electrically connected to the first photoblocking layer BML1 and the second photoblocking layer BML2, respectively, through other contact holes.

[0215] A via layer 200 is disposed on the second conductive layer. The via layer 200 may include an organic insulating material and perform a surface planarization function.

[0216] Multiple dams 410, 420 and 430, multiple electrodes 210 and 220 and light-emitting element 300 can be disposed on the via layer 200.

[0217] Dikes 410, 420 and 430 may include inner dikes 410 and 420 spaced apart from each other in each sub-pixel PXn and outer dikes 430 disposed at the boundary between adjacent sub-pixels PXn.

[0218] When ink containing the light-emitting elements 300 is jetted using an inkjet printing apparatus during the manufacture of the display device 10, the outer barrier 430 can prevent ink from flowing across the boundary of the sub-pixel PXn. However, the disclosure is not limited thereto.

[0219] Inner embankments 410 and 420 may include a first inner embankment 410 and a second inner embankment 420 disposed adjacent to the center of each sub-pixel PXn.

[0220] The first inner bank 410 and the second inner bank 420 are spaced apart and face each other. A first electrode 210 may be disposed on the first inner bank 410, and a second electrode 220 may be disposed on the second inner bank 420. Figure 20 and Figure 22 It is understood that the first electrode branch portion 210B is disposed on the first inner dam 410, and the second electrode branch portion 220B is disposed on the second inner dam 420.

[0221] The first inner dam 410 and the second inner dam 420 may extend in each sub-pixel PXn along the second direction DR2. Although not shown in the figures, the first inner dam 410 and the second inner dam 420 may extend in the second direction DR2 toward the sub-pixel PXn adjacent to it. However, the disclosure is not limited thereto, and the first inner dam 410 and the second inner dam 420 may be disposed in each sub-pixel PXn to form a pattern throughout the display device 10. Dams 410, 420, and 430 may comprise polyimide (PI), but the disclosure is not limited thereto.

[0222] At least a portion of each of the first inner dam 410 and the second inner dam 420 may protrude from the via layer 200. Each of the first inner dam 410 and the second inner dam 420 may protrude upward from the plane in which the light-emitting element 300 is disposed, and the protruding portion may be at least partially inclined. There is no specific limitation on the protruding shape of each of the first inner dam 410 and the second inner dam 420.

[0223] Electrodes 210 and 220 may be disposed on the via layer 200 and the inner embankments 410 and 420. As described above, each of electrodes 210 and 220 includes an electrode trunk portion 210S or 220S and an electrode branch portion 210B or 220B. Figure 20 The line Xa-Xa' is the line that intersects with the main part 210S of the first electrode. Figure 20 The line Xb-Xb' is a line that intersects with the first electrode branch 210B and the second electrode branch 220B, and Figure 20 The line Xc-Xc' is the line that intersects with the main portion 220S of the second electrode. In other words, it can be understood that it is set... Figure 22 The first electrode 210 in the region Xa-Xa' is the main part 210S of the first electrode, and is set in Figure 22 The first electrode 210 and the second electrode 220 in the region Xb-Xb' are respectively the first electrode branch portion 210B and the second electrode branch portion 220B, and are set in Figure 22 The second electrode 220 in the region Xc-Xc' is the main part 220S of the second electrode. The main parts 210S and 220S, as well as the branch parts 210B and 220B, can respectively form the first electrode 210 and the second electrode 220.

[0224] Each of the first electrode 210 and the second electrode 220 may have a portion disposed on the via layer 200 and a portion disposed on the first inner dam 410 or the second inner dam 420. As described above, the first electrode backbone portion 210S of the first electrode 210 and the second electrode backbone portion 220S of the second electrode 220 may extend in the first direction DR1, and the first inner dam 410 and the second inner dam 420 may extend in the second direction DR2, so as to also be located in the adjacent sub-pixel PXn in the second direction DR2. Although not shown in the figures, the first electrode backbone portions 210S and 220S of the first electrode 210 and the second electrode 220 extending in the first direction DR1 may partially overlap with the first inner dam 410 and the second inner dam 420. However, the disclosure is not limited thereto, and the first electrode backbone portions 210S and 220S may also not overlap with the first inner dam 410 and the second inner dam 420.

[0225] A first electrode contact hole (CNTD) penetrating the via layer 200 to expose a portion of the first drain electrode 123 of the first transistor 120 can be formed in the first electrode backbone portion 210S of the first electrode 210. The first electrode 210 can contact the first drain electrode 123 through the first electrode contact hole (CNTD). The first electrode 210 can be electrically connected to the first drain electrode 123 of the first transistor 120 to receive a predetermined electrical signal from the first transistor 120.

[0226] The second electrode backbone 220S of the second electrode 220 can extend in one direction and also be located in the non-emitting region where no light-emitting element 300 is disposed. A second electrode contact hole CNTS that penetrates the via layer 200 to expose a portion of the power electrode 162 can be formed in the second electrode backbone 220S. The second electrode 220 can contact the power electrode 162 through the second electrode contact hole CNTS. The second electrode 220 can be electrically connected to the power electrode 162 to receive a predetermined electrical signal from the power electrode 162.

[0227] A portion of the first electrode 210 and the second electrode 220 (e.g., the first electrode branch portion 210B and the second electrode branch portion 220B) can be respectively disposed on the first inner dam 410 and the second inner dam 420. The first electrode branch portion 210B of the first electrode 210 can cover the first inner dam 410, and the second electrode branch portion 220B of the second electrode 220 can cover the second inner dam 420. Since the first inner dam 410 and the second inner dam 420 are spaced apart from each other at the center of each sub-pixel PXn, the first electrode branch portion 210B and the second electrode branch portion 220B can also be spaced apart from each other. A plurality of light-emitting elements 300 can be disposed in the region between the first electrode 210 and the second electrode 220, that is, in the space in which the first electrode branch portion 210B and the second electrode branch portion 220B are spaced apart and face each other.

[0228] Each of electrodes 210 and 220 may include a transparent conductive material. For example, each of electrodes 210 and 220 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO). However, the disclosure is not limited thereto. In some embodiments, each of electrodes 210 and 220 may include a conductive material with high reflectivity. For example, each of electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), or aluminum (Al) as a material with high reflectivity. In this case, each of electrodes 210 and 220 may reflect incident light in the upward direction of each sub-pixel PXn.

[0229] Furthermore, each of electrodes 210 and 220 may have a structure in which the transparent conductive material and the highly reflective metal layer are stacked in one or more layers, or may be formed as a single layer comprising them. In embodiments, each of electrodes 210 and 220 may have a stacked structure of ITO / Ag / ITO / IZO or may be an alloy comprising aluminum (Al), nickel (Ni), lanthanum (La), etc. However, the disclosure is not limited thereto.

[0230] A first insulating layer 510 is disposed on the via layer 200, the first electrode 210, and the second electrode 220. The first insulating layer 510 partially covers the first electrode 210 and the second electrode 220. The first insulating layer 510 may cover most of the upper surfaces of the first electrode 210 and the second electrode 220, but may partially expose the first electrode 210 and the second electrode 220. The first insulating layer 510 may partially expose the upper surfaces of the first electrode 210 and the second electrode 220, for example, partially exposing the upper surface of the first electrode branch portion 210B disposed on the first inner bank 410 and the upper surface of the second electrode branch portion 220B disposed on the second inner bank 420. That is, the first insulating layer 510 may be substantially completely formed on the via layer 200, but may include openings that partially expose the first electrode 210 and the second electrode 220. The openings of the first insulating layer 510 may be positioned to expose the relatively flat upper surfaces of the first electrode 210 and the second electrode 220.

[0231] In some embodiments, the first insulating layer 510 may be stepped, such that a portion of the upper surface of the first insulating layer 510 is recessed between the first electrode 210 and the second electrode 220. In some embodiments, the first insulating layer 510 may comprise an inorganic insulating material, and due to the step formed by the member disposed below the first insulating layer 510, a portion of the upper surface of the first insulating layer 510, configured to cover the first electrode 210 and the second electrode 220, may be recessed. The light-emitting element 300 disposed on the first insulating layer 510 between the first electrode 210 and the second electrode 220 may form an empty space with the recessed upper surface of the first insulating layer 510. The light-emitting element 300 may be partially spaced from the upper surface of the first insulating layer 510, and the empty space may be filled with the material forming the second insulating layer 520, which will be described later.

[0232] However, the disclosure is not limited thereto. The first insulating layer 510 may also form a flat upper surface, allowing the light-emitting element 300 to be disposed on the flat upper surface. The upper surface may extend in a direction toward the first electrode 210 and the second electrode 220, and may terminate on the inclined side surfaces of the first electrode 210 and the second electrode 220. That is, the first insulating layer 510 may be disposed in the region where the electrodes 210 and 220 overlap with the inclined side surfaces of the first inner dam 410 and the second inner dam 420, respectively. The contact electrode 260, which will be described later, may contact the exposed areas of the first electrode 210 and the second electrode 220, and may smoothly contact the end of the light-emitting element 300 on the flat upper surface of the first insulating layer 510.

[0233] The first insulating layer 510 protects the first electrode 210 and the second electrode 220 while insulating them from each other. Furthermore, the first insulating layer 510 prevents the light-emitting element 300 disposed on the first insulating layer 510 from directly contacting other components and thus being damaged. However, the shape and structure of the first insulating layer 510 are not limited thereto.

[0234] The light-emitting element 300 may be disposed on the first insulating layer 510 between electrodes 210 and 220. For example, at least one light-emitting element 300 may be disposed on the first insulating layer 510 disposed between electrode branch portions 210B and 220B. However, the disclosure is not limited thereto, and although not shown in the figures, at least some of the light-emitting elements 300 disposed in each sub-pixel PXn may also be disposed in areas other than the region between electrode branch portions 210B and 220B. Furthermore, the light-emitting elements 300 may be disposed at positions where a portion of each light-emitting element 300 overlaps with electrodes 210 and 220. The light-emitting elements 300 may be disposed on the respective facing ends of the first electrode branch portion 210B and the second electrode branch portion 220B, and may be electrically connected to electrodes 210 and 220 respectively via contact electrodes 260.

[0235] As described above, each sub-pixel PXn may contain a light-emitting element 300, which includes an active layer 330 that emits light L of the same wavelength but emits light L1 to L3 of different wavelengths depending on a wavelength conversion material 385 or a scatterer 386 disposed on an insulating film 380. Although only the first sub-pixel PX1, in which the first light-emitting element 301 is disposed, is shown in the figures, the same illustration can be applied to the second sub-pixel PX2 and the third sub-pixel PX3.

[0236] Furthermore, in each of the light-emitting elements 300, multiple layers can be disposed in a direction horizontal to the via layer 200. Each of the light-emitting elements 300 in the display device 10 according to the embodiment may include a first semiconductor layer 310, a second semiconductor layer 320, and an active layer 330, and these layers can be disposed sequentially in a direction horizontal to the via layer 200. However, the disclosure is not limited thereto, and the layers of each light-emitting element 300 may also be disposed in the opposite direction in the order in which they are disposed. In some cases, when the light-emitting elements 300 have different structures, the layers may be disposed in a direction perpendicular to the via layer 200.

[0237] A second insulating layer 520 may be disposed on a portion of each light-emitting element 300. The second insulating layer 520 may partially cover the outer surface of each light-emitting element 300. The second insulating layer 520 may protect the light-emitting element 300 while fixing it during the manufacturing process of the display device 10. Furthermore, in an embodiment, a portion of the material of the second insulating layer 520 may be disposed between the lower surface of the light-emitting element 300 and the first insulating layer 510. As described above, the second insulating layer 520 may be formed to fill the space between the first insulating layer 510 formed during the manufacturing process of the display device 10 and the light-emitting element 300. Therefore, the second insulating layer 520 may be formed to cover the outer surface of each light-emitting element 300. However, the disclosure is not limited thereto.

[0238] In the plan view, the second insulating layer 520 may extend in the second direction DR2 between the first electrode branch portion 210B and the second electrode branch portion 220B. For example, in the plan view, the second insulating layer 520 may have an island shape or a line shape on the via layer 200.

[0239] Contact electrode 260 is disposed on electrodes 210 and 220 and on the second insulating layer 520. First contact electrode 261 and second contact electrode 262 may be spaced apart from each other on the second insulating layer 520. The second insulating layer 520 insulates the first contact electrode 261 and second contact electrode 262 from each other to prevent them from making direct contact.

[0240] Although not shown in the accompanying drawings, a plurality of contact electrodes 260 may extend in the second direction DR2 in the plan view and may be spaced apart from each other in the first direction DR1. Each of the contact electrodes 260 may contact at least one end of each light-emitting element 300 and may be electrically connected to the first electrode 210 or the second electrode 220 to receive an electrical signal. The contact electrodes 260 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 may be disposed on the first electrode branch portion 210B and may contact one end of each light-emitting element 300, and the second contact electrode 262 may be disposed on the second electrode branch portion 220B and may contact the other end of each light-emitting element 300.

[0241] The first contact electrode 261 can contact the exposed area of ​​the first electrode 210 on the first inner dam 410, and the second contact electrode 262 can contact the exposed area of ​​the second electrode 220 on the second inner dam 420. The contact electrode 260 can transmit the electrical signal received from each electrode 210 or 220 to the light-emitting element 300.

[0242] Contact electrode 260 may include a conductive material such as ITO, IZO, ITZO, or aluminum (Al). However, the disclosure is not limited thereto.

[0243] A passivation layer 550 may be disposed on the first contact electrode 261, the second contact electrode 262, and the second insulating layer 520. The passivation layer 550 may be used to protect components disposed on the via layer 200 from the influence of the external environment.

[0244] Each of the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 described above may comprise an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may comprise an inorganic insulating material, such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y The insulating layer 510, the second insulating layer 520, and the passivation layer 550 may comprise organic insulating materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, or polymethyl methacrylate-polycarbonate synthetic resin. However, the disclosure is not limited thereto.

[0245] The display device 10 may include a greater number of insulating layers. According to an embodiment, the display device 10 may also include a third insulating layer configured to protect the first contact electrode 261.

[0246] Figure 23 This is a cross-sectional view of a display device according to another embodiment.

[0247] Reference Figure 23 The display device 10_1 according to the embodiment may further include a third insulating layer 530_1 disposed on the first contact electrode 261_1. The display device 10_1 according to the current embodiment and... Figure 22 The difference between the display device 10 and the display device 10_1 is that the display device 10_1 also includes a third insulating layer 530_1, so at least a portion of the second contact electrode 262_1 is disposed on the third insulating layer 530_1. Therefore, any redundant description will be omitted below, and the differences will be described in detail.

[0248] Figure 23The display device 10_1 may include a third insulating layer 530_1 disposed on the first contact electrode 261_1 and electrically insulating the first contact electrode 261_1 and the second contact electrode 262_1 from each other. The third insulating layer 530_1 may cover the first contact electrode 261_1, but may not overlap with a portion of each light-emitting element, allowing the light-emitting elements to be connected to the second contact electrode 262_1. The third insulating layer 530_1 may partially contact the first contact electrode 261_1 and the second insulating layer 520_1 on the upper surface of the second insulating layer 520_1. The third insulating layer 530_1 may cover the end of the first contact electrode 261_1 on the second insulating layer 520_1. Therefore, the third insulating layer 530_1 can protect the first contact electrode 261_1 while electrically insulating it from the second contact electrode 262_1.

[0249] The side surface of the third insulating layer 530_1 along the direction in which the second contact electrode 262_1 is disposed may be aligned with the side surface of the second insulating layer 520_1. However, the disclosure is not limited thereto. In some embodiments, the third insulating layer 530_1 may comprise an inorganic insulating material, similar to the first insulating layer 510_1.

[0250] The first contact electrode 261_1 can be disposed between the first electrode 210_1 and the third insulating layer 530_1, and the second contact electrode 262_1 can be disposed on the third insulating layer 530_1. The second contact electrode 262_1 can partially contact the first insulating layer 510_1, the second insulating layer 520_1, the third insulating layer 530_1, the second electrode 220_1, and the light-emitting element 300. The end of the second contact electrode 262_1 along the direction in which the first electrode 210_1 is disposed can be disposed on the third insulating layer 530_1.

[0251] A passivation layer 550_1 can be disposed on the third insulating layer 530_1 and the second contact electrode 262_1 to protect them. Redundant descriptions will be omitted below.

[0252] In the display device 10, the first electrode 210 and the second electrode 220 do not necessarily extend in the same direction. The first electrode 210 and the second electrode 220 of the display device 10 are not limited to a specific shape, as long as they are spaced apart from each other to provide space in which the light-emitting element 300 is disposed.

[0253] Figure 24 This is a plan view of the pixels of a display device according to another embodiment.

[0254] Reference Figure 24According to an embodiment, the first electrode 210_2 and the second electrode 220_2 of the display device 10_2 can be at least partially bent, and the bent regions of the first electrode 210_2 and the second electrode 220_2 can be spaced apart to face each other. The display device 10_2 according to the current embodiment and... Figure 20 The difference in the display device 10 lies in the shape of each of the first electrode 210_2 and the second electrode 220_2. Therefore, any redundant description will be omitted below, and the differences will be described in detail.

[0255] Figure 24 The first electrode 210_2 of the display device 10_2 may include a plurality of holes HOL. For example, as shown in the figures, the first electrode 210_2 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged along the second direction DR2. However, the disclosure is not limited thereto, and the first electrode 210_2 may include a larger or smaller number of holes HOL, or may include only one hole HOL. The following will describe by way of example the case in which the first electrode 210_2 includes a first hole HOL1, a second hole HOL2, and a third hole HOL3.

[0256] In an embodiment, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a circular planar shape. Therefore, the first electrode 210_2 may include a curved region formed by each of the holes HOL, and may face the second electrode 220_2 in the curved region. However, this is merely an example, and the disclosure is not limited thereto. Each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 is not limited to a specific shape, as long as it provides space for the second electrode 220_2 to be disposed therein, as will be described later, and may have various planar shapes, such as elliptical shapes and quadrilateral shapes or polygonal shapes with more than one side.

[0257] Multiple second electrodes 220_2 can be configured in each sub-pixel PXn. For example, three second electrodes 220_2 can be configured in each sub-pixel PXn to correspond to the first holes HOL1 to the third holes HOL3 of the first electrode 210_2. The second electrodes 220_2 can be located in each of the first holes HOL1 to the third holes HOL3 and can be surrounded by the first electrode 210_2.

[0258] In an embodiment, the hole HOL of the first electrode 210_2 may have a curved outer surface, and the second electrode 220_2 disposed in the hole HOL of the first electrode 210_2 may have a curved outer surface and may be spaced apart from the first electrode 210_2 to face the first electrode 210_2. For example... Figure 24As shown, the first electrode 210_2 may include a hole HOL having a circular shape in the plan view, and the second electrode 220_2 may also have a circular shape in the plan view. The curved surface of the region where the hole HOL of the first electrode 210_2 is formed may be spaced apart from the curved outer surface of the second electrode 220_2 to face the curved outer surface of the second electrode 220_2. For example, the first electrode 210_2 may surround the outer surface of the second electrode 220_2.

[0259] As described above, the light-emitting element 300 can be disposed between the first electrode 210_2 and the second electrode 220_2. The display device 10_2 according to the current embodiment may include a second electrode 220_2 having a circular shape and a first electrode 210_2 surrounding the second electrode 220_2, and the light-emitting element 300 can be arranged along the outer surface of the second electrode 220_2. Since the light-emitting element 300 extends in one direction as described above, the light-emitting elements 300 arranged along the curved outer surface of the second electrode 220_2 in each sub-pixel PXn can be configured such that their extending directions face different directions. Depending on the direction in which the light-emitting element 300 extends along the direction it faces, each sub-pixel PXn can have various light emission directions. In the display device 10_2 according to the current embodiment, since the first electrode 210_2 and the second electrode 220_2 are configured to have curved shapes, the light-emitting element 300 disposed between the first electrode 210_2 and the second electrode 220_2 can face different directions, and the lateral visibility of the display device 10_2 can be improved.

[0260] Figure 25 It includes Figure 18 A cross-sectional view of a portion of a display device containing light-emitting elements.

[0261] Figure 25 It shows including Figure 18 The light-emitting element 300' in the display device 10 Figure 22 Part Xb-Xb'. Besides the structure of the light-emitting element 300'. Figure 25 The display device 10 and Figure 22 The display device 10 is the same. Therefore, any redundant descriptions will be omitted below, and the differences will be described in detail.

[0262] As described above, the light-emitting element 300' may include multiple layers and may be disposed between the first electrode 210 and the second electrode 220. The layers of the light-emitting element 300' may be disposed in a direction horizontal to the via layer 200. According to an embodiment, the light-emitting element 300' may be configured such that the body of the first semiconductor layer 310' is parallel to the via layer 200 in its extending direction. In the light-emitting element 300' disposed on the first insulating layer 510, the insulating film 380', electrode layer 370', second semiconductor layer 320', active layer 330', and first semiconductor layer 310' may be disposed sequentially in a direction perpendicular to the via layer 200. Furthermore, since each layer of the light-emitting element 300' surrounds the outer surface of other layers, the light-emitting element 300' disposed in the display device 10 may have a symmetrical structure relative to the first semiconductor layer 310'. That is, the active layer 330', the second semiconductor layer 320', the electrode layer 370', and the insulating film 380' can be sequentially stacked from the first semiconductor layer 310' along a direction perpendicular to the via layer 200'. However, the disclosure is not limited to this. The layers of the light-emitting element 300' can also be arranged in the opposite direction. In some cases, when the light-emitting element 300' has different structures, the layers can be arranged in a direction horizontal to the via layer 200.

[0263] Specifically, in Figure 18 In the light-emitting element 300', a wavelength conversion material 385 can be disposed on the insulating film 380' along the region where the active layer 330' is disposed. A large portion of the region where the wavelength conversion material 385 is disposed can be stacked with the active layer 330'. Therefore, most of the light L generated from the active layer 330' can be incident on the wavelength conversion material 385, and the amount of light converted by the wavelength conversion material 385 can be increased.

[0264] exist Figure 25 In the display device 10, a portion of the insulating film 380' of the light-emitting element 300' can be removed, and the electrode layer 370' and the first semiconductor layer 310' can be partially exposed. During the manufacturing process of the display device 10, the insulating film 380' can be partially removed when the second insulating layer 520 is formed. The exposed area of ​​the electrode layer 370' can contact the first contact electrode 261, and the exposed area of ​​the first semiconductor layer 310' can contact the second contact electrode 262.

[0265] Furthermore, the light-emitting element 300' may be based on a body comprising a first end having an inclined side surface and a second end extending with a width smaller than the width of the body. In the light-emitting element 300' disposed on the first insulating layer 510, the side surface of the body may partially contact the first insulating layer 510, and the first end and the second end may be spaced apart from the first insulating layer 510. The second insulating layer 520 may also be disposed in the region where the body of the light-emitting element 300, the first end, and the second end are spaced apart from the first insulating layer 510. Other elements are the same as those described above and will not be described further.

[0266] In summarizing the detailed description, those skilled in the art will understand that many changes and modifications can be made to the preferred embodiments without substantially departing from the principles of the invention. Therefore, the preferred embodiments of the invention disclosed are used only in a general and descriptive sense and not for limiting purposes.

Claims

1. A display device comprising a first pixel and a second pixel, wherein both the first pixel and the second pixel comprise: Base; The first electrode is disposed on the substrate; The second electrode is disposed on the substrate and spaced apart from the first electrode; A light-emitting element is disposed between the first electrode and the second electrode; A first contact electrode is disposed in the first pixel on the first electrode and the light-emitting element; A second contact electrode is disposed in the first pixel on the second electrode and the light-emitting element; as well as An insulating layer is disposed between the light-emitting element and the first electrode. In this configuration, the first contact electrode contacts both the first electrode and the light-emitting element within the first pixel. In this configuration, the second contact electrode contacts both the second electrode and the light-emitting element within the first pixel. The light-emitting elements each include: a first semiconductor layer and a second semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; an insulating film surrounding at least a side surface of the active layer; a ligand disposed on at least a portion of the side surface of the insulating film and bonded to the insulating film by forming a chemical bond; and a wavelength conversion material, including a quantum dot material, and bonded to the ligand by forming a chemical bond. The wavelength conversion material directly contacts the first contact electrode and the second contact electrode in the first pixel. The insulating layer directly contacts the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the wavelength conversion material, and The light-emitting element includes: a first light-emitting element, wherein the light emitted from the active layer and the light emitted outside the light-emitting element are the same; and a second light-emitting element, wherein the light emitted from the active layer and the light emitted outside the light-emitting element have different center wavelengths.

2. The display device according to claim 1, wherein, The active layer of each of the first and second light-emitting elements emits first light, the center band of which is a first wavelength. The first light-emitting element is disposed in the first pixel, and The second light-emitting element includes a first wavelength conversion material and is disposed in the second pixel.

3. The display device according to claim 2, wherein, The center wavelength of the first light is in the range of 450nm to 495nm, and The wavelength conversion material includes quantum dot materials.

4. The display device according to claim 2, wherein, The first wavelength conversion material converts the first light into second light, the center band of which is a second wavelength different from the first wavelength.

5. The display device according to claim 4, wherein, Each of the first light-emitting element and the second light-emitting element further includes a scatterer disposed on the insulating film to scatter the incident light.

6. The display device according to claim 4, further comprising a third pixel, in, The light-emitting element further includes a third light-emitting element, which is disposed in the third pixel and includes a second wavelength conversion material.

7. The display device according to claim 6, wherein, The active layer of the third light-emitting element emits the first light, and The second wavelength conversion material converts the first light into a third light, the center band of which is a third wavelength different from the first wavelength and the second wavelength.

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