Photomask, method for manufacturing photomask, method for manufacturing display device

Abstract

The present invention aims to gently tilt the photosensitive resist from the center to the outside. A photomask (1A) has a plurality of pattern formation regions A and a light-transmitting portion (7) on a transparent substrate, the plurality of pattern formation regions (A) being formed by partially overlapping a pattern of the semi-transmissive film and a pattern of the light-blocking film and having a prescribed shape, the light-transmitting portion (7) not having a pattern formation region (A) formed therein. When a region having a prescribed area of a central portion including the pattern formation region (A) is set as a first region (D1) and a region having a prescribed area in a peripheral portion of the pattern formation region (A) is set as a second region (D2), the transmittance in the second region (D2) is higher than the transmittance in the first region (D1).

Description

Technical Field

[0001] This invention relates to a photomask, a method for manufacturing the photomask, and a method for manufacturing a display device. Background Technology

[0002] Techniques are known to form photoresist into a desired shape using exposure with a photomask. For example, Patent Document 1 discloses a method for manufacturing a multi-grayscale photomask having a stepped pattern on at least one layer on the surface of a mask substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-45016 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] When a resist with an uneven shape is formed on a transfer substrate by exposure using a photomask, it is desirable for the resist in any region to be gradually tilted from the center to the outside.

[0008] One objective of this invention is to provide a photomask capable of forming a gently tilted shape on a photosensitive resist for a transfer substrate, and a method thereof for manufacturing the same.

[0009] Methods for solving problems

[0010] To address the aforementioned issues, one aspect of the present invention relates to a photomask having multiple patterned regions on a transparent substrate. These multiple patterned regions include at least two regions with different transmittances and have a defined shape. A region containing a defined area at the center of the aforementioned patterned regions is designated as a first region, and a region containing a defined area at the outer edge of the aforementioned patterned regions is designated as a second region. The transmittance of the aforementioned second region is higher or lower than that of the first region.

[0011] To address the aforementioned issues, one aspect of the present invention relates to a method for manufacturing a photomask comprising the following regions: a semi-transparent region formed by a semi-transparent film on a transparent substrate; a stacked region formed by at least the semi-transparent film and a light-shielding film on the transparent substrate, wherein the semi-transparent film is positioned further away from the transparent substrate than the light-shielding film; and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: a step of preparing a mask blank, wherein the mask blank is formed by at least stacking the semi-transparent film and the light-shielding film on the surface of the transparent substrate such that the semi-transparent film is positioned further away from the transparent substrate than the light-shielding film; and a step of forming a first photoresist pattern, wherein a first photoresist film is formed on the surface of the mask blank, and the first photoresist film is patterned using a drawing apparatus. The process includes: forming a first photoresist pattern by describing a first photoresist film; removing a portion of the light-shielding film using the first photoresist pattern as a mask; removing the exposed semi-permeable film; forming a second photoresist on the entire surface of the photomask containing the light-shielding film and drawing the second photoresist film using a drawing device to form the second photoresist pattern; and removing a portion of the light-shielding film using the second photoresist pattern as a mask. Specifically, when a region containing a predetermined area at the center of the pattern forming region formed by the light-shielding film and the semi-permeable film is designated as the first region, and a region containing a predetermined area at the outer periphery of the pattern forming region is designated as the second region, the pattern forming region is formed such that the transmittance in the first region is higher than that in the second region.

[0012] To address the aforementioned issues, one aspect of the present invention relates to a method for manufacturing a photomask comprising the following regions: a semi-transparent region formed by a semi-transparent film on a transparent substrate, a stacked region formed by sequentially stacking a light-shielding film and the semi-transparent film on the transparent substrate, and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: preparing a mask blank on the surface of a transparent substrate to which a light-shielding film is formed; forming a first photoresist film on the surface of the mask blank; drawing the first photoresist film using a drawing apparatus to form a first photoresist pattern; and removing a portion of the light-shielding film using the first photoresist pattern as a mask. The process includes: forming a semi-transparent film on the entire surface of the photomask containing the aforementioned light-shielding film; forming a second photoresist film on the surface of the aforementioned semi-transparent film; drawing the aforementioned second photoresist film using a drawing device to form a second photoresist pattern; and removing a portion of the aforementioned semi-transparent film using the aforementioned second photoresist pattern as a mask. Specifically, when a region comprising a predetermined area of ​​the central portion of the pattern forming region formed by the aforementioned light-shielding film and the aforementioned semi-transparent film is designated as a first region, and a region comprising a predetermined area of ​​the outer periphery of the aforementioned pattern forming region is designated as a second region, the aforementioned pattern forming region is formed such that the transmittance of the aforementioned first region is higher than that of the aforementioned second region.

[0013] To address the aforementioned issues, one aspect of the present invention relates to a method for manufacturing a photomask comprising the following regions: a semi-transparent region formed by a semi-transparent film on a transparent substrate; a stacked region formed by at least the semi-transparent film and a light-shielding film on the transparent substrate such that the semi-transparent film is positioned further away from the transparent substrate than the light-shielding film; and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: a step of preparing a mask blank, wherein the mask blank is formed by at least stacking the semi-transparent film and the light-shielding film on the surface of the transparent substrate such that the semi-transparent film is positioned further away from the transparent substrate than the light-shielding film; a step of forming a first photoresist pattern, wherein a first photoresist film is formed on the surface of the mask blank, and a patterning device is used to pattern the first photoresist film. The process involves: drawing a photoresist film to form a first photoresist pattern; using the first photoresist pattern as a mask to remove a portion of the light-shielding film; removing the exposed semi-permeable film; forming a second photoresist pattern by forming a second photoresist film on the entire surface of the photomask containing the light-shielding film, drawing the second photoresist film with a drawing apparatus to form a second photoresist pattern; and using the second photoresist pattern as a mask to remove a portion of the semi-permeable film. Specifically, when a region containing a predetermined area at the center of the pattern forming region formed by the light-shielding film and the semi-permeable film is designated as the first region, and a region with a predetermined area at the outer periphery of the pattern forming region is designated as the second region, the pattern forming region is formed such that the transmittance in the first region is lower than that in the second region.

[0014] To address the aforementioned issues, one aspect of the present invention relates to a method for manufacturing a photomask comprising the following regions: a semi-transparent region formed by a semi-transparent film on a transparent substrate; a stacked region formed by sequentially layering a light-shielding film and the semi-transparent film on the transparent substrate; and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: preparing a mask blank on the surface of a transparent substrate to which a light-shielding film is formed; forming a first photoresist film on the surface of the mask blank; drawing the first photoresist film using a drawing apparatus to form a first photoresist pattern; and removing a portion of the light-shielding film using the first photoresist pattern as a mask. The process includes: forming a semi-transparent film on the entire surface of the photomask containing the aforementioned light-shielding film; forming a second photoresist film on the surface of the aforementioned semi-transparent film; drawing the aforementioned second photoresist film with a drawing device to form a second photoresist pattern; and removing a portion of the aforementioned semi-transparent film using the aforementioned second photoresist pattern as a mask. Specifically, when a region comprising a predetermined area of ​​the central portion of the pattern forming region formed by the aforementioned light-shielding film and the aforementioned semi-transparent film is designated as a first region, and a region comprising a predetermined area of ​​the outer periphery of the aforementioned pattern forming region is designated as a second region, the aforementioned pattern forming region is formed such that the transmittance of the aforementioned first region is lower than that of the aforementioned second region.

[0015] The effects of the invention

[0016] According to one aspect of the present invention, the aforementioned photoresist in any region of the photoresist on the transfer substrate can be formed into a gently tilted shape. Attached Figure Description

[0017] Figure 1 This is a top view showing the configuration of the photomask according to Embodiment 1 of the present invention.

[0018] Figure 2(a) is a diagram showing the pattern design formed on the pattern forming area of ​​the photomask, and (b) is a cross-sectional view of the photomask obtained by cutting the transparent substrate with a vertical plane.

[0019] Figure 3(a) shows the intensity of light irradiated onto the photoresist film on the transfer substrate when light is irradiated onto the photoresist film on the transfer substrate through the aforementioned photomask. Figure 3(b) shows the shape of the photoresist film after exposure and development of the photosensitive photoresist film on the transfer substrate through the aforementioned photomask.

[0020] Figure 4 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0021] Figure 5This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0022] Figure 6 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0023] Figure 7 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0024] Figure 8(a) is a top view of a pattern forming region as a modified example of the pattern forming region described above; (b) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated onto the photoresist film through a photomask having the pattern forming region as a modified example described above; and (c) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask described above.

[0025] Figure 9(a) is a top view of a pattern forming region as another variation of the pattern forming region described above; (b) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated onto the photoresist film through a photomask having the pattern forming region as another variation of the above; and (c) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask described above.

[0026] Figure 10(a) is a top view of a pattern forming region as another variation of the pattern forming region described above; (b) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated onto the photoresist film through a photomask having the pattern forming region as another variation of the above; and (c) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask described above.

[0027] Figure 11(a) is a top view of a pattern forming area as another variation of the pattern forming area described above; (b) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated onto the photoresist film through a photomask having the pattern forming area as another variation of the above; and (c) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask described above.

[0028] Figure 12(a) is a top view of a pattern forming region as another variation of the pattern forming region described above; (b) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated onto the photoresist film through a photomask having a pattern forming region as another variation of the above; and (c) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask described above.

[0029] Figure 13(a) is a top view of a pattern forming region as another variation of the pattern forming region described above; (b) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated onto the photoresist film through a photomask having the pattern forming region as another variation of the above; and (c) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask described above.

[0030] Figure 14(a) is a diagram showing the pattern design formed by the pattern forming region of the photomask having the pattern forming region as another variation of the above, and (b) is a cross-sectional view of the photomask obtained by cutting the transparent substrate with a vertical plane.

[0031] Figure 15(a) is a diagram showing the intensity of light irradiated onto the photoresist film when light is irradiated through a photomask having a pattern forming area as another variation of the above. Figure 15(b) is a diagram showing the shape of the photoresist film after exposure and development of the photosensitive photoresist film through the photomask.

[0032] Figure 16 The figure is used to illustrate the manufacturing method of the photomask described above.

[0033] Figure 17 The figure is used to illustrate the manufacturing method of the photomask described above.

[0034] Figure 18 The figure is used to illustrate the manufacturing method of the photomask described above.

[0035] Figure 19(a) is a diagram showing the pattern design of the pattern forming area of ​​the photomask according to Embodiment 2 of the present invention, and (b) is a cross-sectional view of the photomask obtained by cutting it with a plane perpendicular to the transparent substrate.

[0036] Figure 20 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0037] Figure 21 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0038] Figure 22 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0039] Figure 23 This is a top view showing the pattern forming area of ​​the photomask according to Embodiment 3 of the present invention.

[0040] Figure 24 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0041] Figure 25 This diagram shows the shape of the photoresist film after exposure and development of the negative photoresist film on the transfer substrate through the photomask according to Embodiment 1 of the present invention.

[0042] Figure 26(a) is a diagram showing the pattern design formed in the pattern forming area of ​​the photomask according to Embodiment 5 of the present invention, and (b) is a cross-sectional view of the photomask obtained by cutting the transparent substrate with a vertical plane.

[0043] Figure 27 This diagram shows the shape of the photoresist film after exposure and development of the positive photoresist film on the transfer substrate through the aforementioned photomask.

[0044] Figure 28 This diagram shows the shape of the photoresist film after exposure and development of the negative photoresist film on the transfer substrate through the aforementioned photomask.

[0045] Figure 29 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0046] Figure 30 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0047] Figure 31 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0048] Figure 32(a) is a diagram showing the pattern design of the pattern forming area of ​​the photomask according to Embodiment 6 of the present invention, and (b) is a cross-sectional view of the photomask obtained by cutting the transparent substrate with a vertical plane.

[0049] Figure 33 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0050] Figure 34 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0051] Figure 35 This is a diagram used to illustrate the manufacturing method of the aforementioned photomask.

[0052] Figure 36 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0053] Figure 37 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0054] Figure 38 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0055] Figure 39 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0056] Figure 40 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0057] Figure 41 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0058] Figure 42 This is a top view showing the pattern-forming area of ​​a photomask, which is a modified example of the aforementioned photomask.

[0059] Explanation of symbols in attached drawings

[0060] 1A-1F photomasks; 2 transparent substrate; 3 semi-transparent film; 4 etching blocking film; 5 light-shielding film; 7, 85 light-transmitting areas; 10, 86, 103 overlapping areas; 11 non-overlapping areas; 12 grid pattern areas; 14, 17, 70, 80, 88, 90, 102, 110 central areas; 16 light-transmitting areas; 20, 84 photoresist films; 30, 50 mask blanks; 40, 60 first photoresist films; 41, 61 second photoresist films; A pattern forming area; D1 first area; D2 second area. Detailed Implementation

[0061] [Implementation Method 1]

[0062] The following is a detailed description of one embodiment of the present invention. Figure 1 Figure 2(a) is a top view showing the configuration of the photomask 1A in this embodiment. Figure 2(b) is a diagram showing the pattern design of the pattern forming region A formed on the photomask 1A, and Figure 2(b) is a cross-sectional view of the photomask 1A obtained by cutting the transparent substrate 2 with a vertical plane. To explain, Figure 2(b) is an enlarged cross-sectional view of the periphery of one of the pattern forming regions A described below.

[0063] Figure 1 As shown in Figure 2, photomask 1A is a structure formed by sequentially stacking a transparent substrate 2, a semi-transparent film 3, an etch-blocking film 4, and a light-shielding film 5. It should be noted that the semi-transparent film 3, the etch-blocking film 4, and the light-shielding film 5 are not disposed in all areas of the transparent substrate 2, but are appropriately disposed in the pattern forming area A, as shown in Figure 2(b).

[0064] The transparent substrate 2 is a light-transmitting substrate, and can be made of, for example, quartz glass. The semi-transparent film 3 is a film that transmits a portion of the irradiated light, and can be made of chromium-based materials such as chromium oxide, chromium nitride, or chromium oxynitride. The etching barrier film 4 is used to prevent the semi-transparent film 3 from being etched during the etching of the light-shielding film 5. The etching barrier film 4 is made of a material not etched by the solvent used to etch the light-shielding film 5. Materials such as titanium, nickel, and molybdenum silicide can be used as the etching barrier film 4. The light-shielding film 5 is a light-blocking film, and an optical density (OD) value of 2.7 or higher is suitable. For example, a chromium film can be used as the light-shielding film 5.

[0065] like Figure 1 As shown, the pattern forming areas A of the photomask 1A are arranged in a grid pattern. The pattern forming areas A are respectively disposed at positions corresponding to each pixel of the aforementioned display device. The areas where no pattern forming areas A are formed become light-transmitting portions 7 through which light passes.

[0066] Next, the pattern design of the pattern forming region A formed in the photomask 1A will be explained. It will be noted that, in the following explanations, the pattern design of the photomask will be described from a top view of the photomask opposite to the transparent substrate 2.

[0067] As shown in Figure 2(a), the pattern forming region A of the photomask 1A is circular. In the pattern forming region A of the photomask 1A, an overlapping region 10, formed by the overlapping of a light-shielding film 5 and a semi-transparent film 3, is formed in a circular shape at the center of the pattern forming region A. Furthermore, a non-overlapping region 11, in which only the semi-transparent film 3 is formed, is formed in the pattern forming region A surrounding the overlapping region 10. In other words, the non-overlapping region 11 is formed at the outer edge of the pattern forming region A. The non-overlapping region 11 is formed concentrically with respect to the overlapping region 10.

[0068] In this disclosure, the transmittance of a region of a predetermined area within the pattern forming region A is used as an indicator of the difference in light transmittance among different portions of the pattern forming region A. The region containing the predetermined area of ​​the central portion of the pattern forming region A is referred to as the first region D1, and the region containing the predetermined area of ​​the outer edge of the pattern forming region A is referred to as the second region D2. The first region D1 and the second region D2 are regions used to illustrate the difference in transmittance between the central portion and the outer edge of the pattern forming region A. The central portion of the first region D1 is approximately aligned with the central portion of the pattern forming region A. Therefore, the first region D1 is a region that at least includes the overlapping region 10. On the other hand, the central portion of the second region D2 is located at the outer edge of the pattern forming region A. Therefore, the second region D2 is a region that at least includes the non-overlapping region 11 formed at the outer edge of the pattern forming region A. Because the first region D1 and the second region D2 are defined in this way, the transmittance in the second region D2 is higher than the transmittance in the first region D1. To clarify, the central part of the pattern forming area A, when the pattern forming area A is circular, refers to the center of the circle or the part near the center.

[0069] When the first region D1 and the second region D2 are rectangular, the size of these regions is, for example, 1 μm × 1 μm or more. In one embodiment of the present invention, the diameter of the overlapping region 10 of the patterned region A of the photomask is 10 to 60 μm, and the width in the diameter direction of the non-overlapping region 11 is 3 to 20 μm. The first region D1 and the second region D2 can be set in such a way that they do not protrude from the patterned region A. If there are regions with different transmittances within the first region D1 or the second region D2, the average transmittance within the region is taken as the transmittance of the first region D1 or the second region D2.

[0070] In the example shown in Figure 2(a), the first region D1 is a rectangular region that contains only the overlapping region 10 in the central part of the pattern forming region A. The second region D2 is a region that contains only the non-overlapping region 11 formed on the outer edge. In the example shown in Figure 2(a), although the first region D1 and the second region D2 are shown as rectangles, the first region D1 and the second region D2 can also be circular, polygonal, etc. The method of setting the first region D1 and the second region D2 described above is the same as that in the variations 1 to 7 and embodiment 2 described later.

[0071] Figure 3(a) shows the intensity of light irradiated onto the photoresist film 20 on the transfer substrate when light is irradiated through photomask 1A. Figure 3(b) shows the shape of the photoresist film 20 after exposure and development through photomask 1A. In Figure 3(a), the darker the black area, the lower the intensity of light irradiated onto the photoresist film 20. This is further explained in Figures 9(a), 11(a), 13(a), and 15(a) described later. Figure 17 Figure 19(a) Figure 21 The same applies.

[0072] As shown in Figure 3(a), by having a light-shielding film 5 in the center of the pattern forming region A, the intensity of light irradiating the center of the photoresist film 20 is reduced. Furthermore, by having only a semi-transparent film 3 at the outer edge of the pattern forming region A, surrounding the overlapping region 10, the intensity of the irradiated light increases from the center outwards towards the photoresist film 20. The same applies to the variations 1-7 described later. Therefore, as shown in Figure 3(b), the developed photoresist film 20 becomes a region corresponding to the outer edge of the pattern forming region A of the photomask 1A, i.e., the outer edge of the photoresist film 20 has a gently sloping shape.

[0073] As described above, by exposing and developing the photoresist film 20 through the photomask 1A in this embodiment, the outer edge of the photoresist film 20 can be gradually tilted. In other words, the photoresist film 20 can be gradually tilted from the center outwards.

[0074] Furthermore, in this embodiment, the non-overlapping region 11 of the photomask 1A is formed in a concentric circle relative to the overlapping region 10. As a result, the intensity of the light irradiated by the photoresist film 20 can be made to increase in a stepwise manner from the center of the photoresist film outwards in a concentric circle pattern.

[0075] Next, the manufacturing method of photomask 1A will be explained. Figures 4-7 This diagram illustrates the manufacturing method of photomask 1A. (For example...) Figure 4 As shown, in the manufacturing of photomask 1A, firstly, a mask blank 30 is prepared, which is formed by sequentially stacking a semi-transparent film 3, an etched blocking film 4, and a light-shielding film 5 on the surface of a transparent substrate 2 (hereinafter referred to as step 1 P1).

[0076] Next, a first photoresist film 40 is formed on the surface of the mask blank 30 (hereinafter referred to as step 2 P2). Then, the first photoresist film 40 is drawn using a drawing apparatus (hereinafter referred to as step 3 P3). In step 3 P3, when the mask blank 30 is viewed from above, the first photoresist film 40 after development is drawn in the shape of the pattern forming area A (i.e., approximately circular).

[0077] It should be noted that, although not illustrated, in step 3 P3 and step 10 P10 (described later), alignment marks, which serve as a reference for alignment and are called alignment lines, can be formed simultaneously. More specifically, alignment marks are formed at each corner of the transparent substrate 2.

[0078] Next, the area 40A depicted in the first photoresist film 40 is removed by developing the first photoresist film 40, thereby forming the first photoresist pattern (hereinafter referred to as step 4 P4). Step 3 P3 and step 4 P4 are steps for forming the first photoresist pattern.

[0079] Next, as Figure 5 As shown, using a patterned first photoresist film 40 (i.e., the first photoresist pattern) as a mask, the pattern of the light-shielding film 5 is formed by etching the light-shielding film 5 (hereinafter referred to as step 5 P5). In step 5 P5, only the light-shielding film 5 is etched away by using a solvent that does not dissolve the etching barrier film 4 as the solvent for etching the light-shielding film 5.

[0080] Next, using the first photoresist pattern and the light-shielding film 5 as a mask, the etching barrier film 4 is removed (hereinafter referred to as step 6, P6). Then, the exposed semi-transparent film 3 is removed by removing the etching barrier film 4 (hereinafter referred to as step 7, P7). Next, the remaining first photoresist film 40 is removed (hereinafter referred to as step 8, P8).

[0081] Next, as Figure 6 As shown, a second photoresist film 41 is formed on the entire surface of the photomask including the light-shielding film 5 (hereinafter referred to as step 9, P9). Then, the second photoresist film 41 is drawn using a drawing apparatus (hereinafter referred to as step 10, P10). In step 10, when the photomask is viewed from above, the outer edge of the second photoresist film 41 is drawn in a generally circular shape. Furthermore, in step 10, the location of the area to be drawn is determined using the guideline markers formed in step 3, P3.

[0082] Next, the depicted area 41A in the second photoresist film 41 is removed by developing the second photoresist film 41, thereby forming the second photoresist pattern (hereinafter referred to as step 11 P11). Steps 9 P9, 10 P10 and 11 P11 are the steps for forming the second photoresist pattern.

[0083] Next, the pattern of the light-shielding film 5 is formed using the patterned second photoresist film 41 (i.e., the second photoresist pattern) as a mask (hereinafter referred to as step 12 P12). In step 12 P12, similar to step 5 P5, the light-shielding film 5 is etched by using a solvent that does not dissolve the etch barrier film 4 as the solvent. Thus, only the light-shielding film 5 is etched and removed.

[0084] Next, as Figure 7 As shown, the second photoresist pattern and the light-shielding film 5 are used as a mask to remove the etching barrier film 4 and form a pattern of the semi-transparent film 3 (hereinafter referred to as step 13, P13). Finally, the remaining second photoresist film 41 is removed (hereinafter referred to as step 14, P14).

[0085] Through the above process, the central overlapping region 10, which includes the center of the pattern forming region A, is formed in a circular shape, and a photomask 1A having a pattern forming region with a non-overlapping region 11 can be made in a manner that surrounds the overlapping region 10.

[0086] To explain, when using a solvent that does not dissolve the semipermeable membrane 3 as the solvent for etching the light-shielding membrane 5, a mask blank without the etching barrier membrane 4 can be used. For example, by using a mask blank made of a material that has different etching resistance to the light-shielding membrane 5 and the semipermeable membrane 3, it is possible to selectively etch only the light-shielding membrane 5 even without the etching barrier membrane 4.

[0087] Next, the manufacturing method of the display device using photomask 1A in this embodiment will be described. The application of the photomask 1A of the present invention is not limited. In particular, the photomask of the present invention can be advantageously applied in multi-grayscale photomasks, wherein the multi-grayscale photomask is capable of forming a gradually sloping resist shape from any pattern center outwards using a single photomask 1A.

[0088] For example, the manufacturing method of a display device using the photomask 1A of this embodiment includes a step of preparing the photomask 1A and a resist forming step of forming a desired resist shape using the photomask 1A. The resist forming step is a step of transferring the transfer pattern of the photomask 1A onto a substrate using an exposure apparatus. The manufacturing method of a display device using the photomask 1A of this embodiment also includes various other necessary steps.

[0089] As described above, the photomask 1A of the present invention can form a resist shape that is gently inclined in the direction from the center of the pattern outward at the outer edge of the pattern forming area A. Therefore, it is possible to form a desired pattern at any position on the display device, which is an obvious advantage.

[0090] The photomask 1A of the present invention can be exposed using exposure apparatuses known for liquid crystals and organic ELs. For example, a projection exposure apparatus can be used, employing exposure light from a single-wavelength or broadband light source with a peak at 300–500 nm, an aperture number (NA) of 0.08–0.12, and a coherence factor (σ) of conventionally known magnitudes. It should be noted that even an aperture number of 0.12 or higher can be used. Of course, the photomask 1A can also be used as a photomask for proximity exposure.

[0091] <Variation Example 1>

[0092] A modified example of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG8(a) is a top view showing the pattern forming region A in this modified example, FIG8(b) is a diagram showing the intensity of the light irradiated on the photoresist film 20 when light is irradiated on the photoresist film 20 through the photomask 1A of this modified example, and FIG8(c) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this modified example.

[0093] As shown in Figure 8(a), in this modified example, when the pattern forming area A is viewed from the top, a grid pattern area 12 is formed by alternating rectangular overlapping areas 10 and rectangular non-overlapping areas 11. The rectangular overlapping areas are formed by the overlap of a semi-permeable film 3 and a light-shielding film 5, and the rectangular non-overlapping areas are formed where the light-shielding film 5 is not overlapped on the semi-permeable film 3. In addition, in this modified example, an area where the light-shielding film 5 is not overlapped on the semi-permeable film 3 is formed on the outer periphery of the grid pattern area 12. That is, the pattern forming area A of this modified example has: (1) a mixed area including overlapping areas 10 and non-overlapping areas 11, wherein the overlapping areas 10 are formed by overlapping the patterns of the semi-permeable film and the light-shielding film, and the non-overlapping areas 11 are formed where the light-shielding film 5 is not overlapped on the semi-permeable film 3; and (2) a non-mixed area formed at the outer edge of the aforementioned mixed area where the semi-permeable film 3 is not overlapped with the light-shielding film 5. In this variation, the first region D1 exists within the grid pattern region 12 and includes at least a rectangular overlapping region 10 located at the center of the pattern forming region A. That is, the first region D1 can be a region that only includes the overlapping region 10 located at the center of the pattern forming region A, or it can be a region that includes the overlapping region 10 and the surrounding non-overlapping region 11. In this variation, the second region D2 is located outside the grid pattern region 12, that is, within the non-overlapping region 11 formed at the outer edge of the pattern forming region A.

[0094] As shown in FIG8(b), by having a light-shielding film 5 in the center of the pattern forming region A, the intensity of light irradiated by the central portion of the photoresist film 20 decreases as the area ratio of the light-shielding film 5 increases. Furthermore, by having only a semi-transparent film 3 surrounding the overlapping region 10 in the outer edge of the pattern forming region A, the intensity of light irradiated by the photoresist film 20 increases from the center outwards. Therefore, as shown in FIG8(c), the developed photoresist film 20 has a shape with a gently sloping outer edge. That is, by using the photomask 1A of this modified example, the photoresist film 20 can be made to gently slope from the center outwards.

[0095] <Variation Example 2>

[0096] Another variation of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG9(a) is a top view showing the pattern forming region A in this variation, FIG9(b) is a diagram showing the intensity of the light irradiated on the photoresist film 20 when light is irradiated on the photoresist film 20 through the photomask 1A of this variation, and FIG9(c) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this variation.

[0097] As shown in Figure 9(a), in this modified example, when the pattern forming area A is viewed from the top, an overlapping area 10 is formed in the central area 14 of the pattern forming area A, where the semi-permeable film 3 and the light-shielding film 5 overlap. Furthermore, in this modified example, area 15 is formed outside the central area 14, and area 15 has the overlapping area 10 where the semi-permeable film 3 and the light-shielding film 5 overlap, and a plurality of non-overlapping areas 11 where the light-shielding film 5 is not overlapped on the semi-permeable film 3. In area 15, the non-overlapping areas 11 are formed such that their area increases towards the outer edge. Additionally, areas where the light-shielding film 5 is not overlapped on the semi-permeable film 3 are formed on the outer periphery of area 15. In this modified example, the first area D1 is located inside the central area 14. In this modified example, the second area D2 is located within the non-overlapping areas 11 formed at the outer edge of the pattern forming area A.

[0098] With this configuration, as shown in FIG9(b), the intensity of light irradiated on the outer edge of the photoresist film 20 is greater than the intensity of light irradiated on the central portion of the photoresist film 20. Therefore, as shown in FIG9(c), the developed photoresist film 20 can be formed into a shape with a gently sloping outer edge. In other words, the photoresist film 20 can be made to slope gently from the center outwards.

[0099] <Variation Example 3>

[0100] Another variation of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG10(a) is a top view showing the pattern forming region A in this variation, FIG10(b) is a diagram showing the intensity of light irradiated onto the photoresist film 20 when light is irradiated onto the photoresist film 20 through the photomask 1A of this variation, and FIG10(c) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this variation.

[0101] As shown in Figure 10(a), in this modified example, when the pattern forming area A is viewed from the top, the central portion of the pattern forming area A is alternately arranged with overlapping rectangular areas 10 that overlap the semi-transparent film 3 and the light-blocking film 5, and non-overlapping rectangular areas 11 that do not overlap the light-blocking film 5. Furthermore, outside the areas where the overlapping rectangular areas 10 and the non-overlapping rectangular areas 11 are alternately arranged, a region containing only the semi-transparent film 3 is formed. Moreover, in the outer edge of the region containing only the semi-transparent film 3, a plurality of rectangular light-transmitting areas 16 without the light-blocking film 5 and the semi-transparent film 3 are formed. In this modified example, the first region D1 is a region formed by alternately arranging the overlapping regions 10 and the non-overlapping regions 11, and is set on at least a portion of it such that it includes the overlapping regions 10. In this modified example, the second region D2 is a region formed on the outer edge of the pattern forming area A, and is set on at least a portion of it such that it includes the light-transmitting areas 16.

[0102] With this configuration, as shown in FIG10(b), the intensity of light irradiated by the photoresist film 20 is the lowest in the center of the photoresist film 20, and gradually increases from the center toward the outer edge. Thus, as shown in FIG10(c), the shape of the developed photoresist film 20 can be made into a shape that gradually tilts from the center toward the outer edge.

[0103] <Variation Example 4>

[0104] Another variation of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG11(a) is a top view showing the pattern forming region A in this variation, FIG11(b) is a diagram showing the intensity of light irradiated onto the photoresist film 20 when light is irradiated onto the photoresist film 20 through the photomask 1A of this variation, and FIG11(c) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this variation.

[0105] As shown in Figure 11(a), in this modified example, when the pattern forming area A is viewed from the top, an overlapping area 10 is formed in the central area 17 of the pattern forming area A, overlapping the semi-transparent film 3 and the light-shielding film 5. Furthermore, in this modified example, a radially extending region 18 is formed from the central area 17 towards the outer edge of the overlapping area 10 of the pattern forming area A. The radially extending region 18 narrows in width as the pattern forming area A moves towards the outer edge. In this modified example, the first region D1 is located inside the central area 17. In this modified example, the second region D2 is located at the outer edge of the pattern forming area A, and at least one part of it is provided in a manner that includes the non-overlapping region 11. That is, the pattern forming area A of this modified example has: (1) a non-mixed area consisting of overlapping areas, which are formed by overlapping the patterns of a semi-permeable membrane and a light-shielding membrane; and (2) a mixed area formed on the outer edge of the aforementioned non-mixed area, which includes the following areas and non-overlapping areas, namely, the areas are formed by overlapping the patterns of a semi-permeable membrane and a light-shielding membrane, and the non-overlapping areas do not overlap the light-shielding membrane 5 on the semi-permeable membrane 3.

[0106] With this configuration, as shown in FIG11(b), the intensity of light irradiated by the photoresist film 20 is minimum at the center of the photoresist film 20 and gradually increases from the center toward the outer edge. Thus, as shown in FIG11(c), the shape of the developed photoresist film 20 can be made such that it gradually tilts from the center toward the outer edge.

[0107] <Variation Example 5>

[0108] Another variation of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG12(a) is a top view showing the pattern forming region A in this variation. FIG12(b) is a diagram showing the intensity of light irradiated onto the photoresist film 20 when light is irradiated onto the photoresist film 20 through the photomask 1A of this variation. FIG12(c) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this variation.

[0109] As shown in Figure 12(a), in this modified example, when viewing the pattern forming area A from the top view, an overlapping area 10 is formed in the central area 70 of the pattern forming area A, overlapping the semi-transparent film 3 and the light-shielding film 5. Furthermore, in this modified example, a vortex-shaped area 71 extending in a spiral shape is formed from the central area 70 towards the outer edge of the overlapping area 10 of the pattern forming area A. Non-overlapping areas 11 are formed between the plurality of vortex-shaped areas 71. In this specification, "extending in a spiral shape towards the outer edge" actually means "extending in a curved shape towards the outer edge." Radial areas 18 may also narrow in width as they approach the outer edge of the pattern forming area A. In this modified example, the first area D1 is located inside the central area 70. In this modified example, the second area D2 is the area at the outer edge of the pattern forming area A, and is located on at least a portion of it in a manner that includes the non-overlapping areas 11.

[0110] With this configuration, as shown in FIG12(b), the intensity of light irradiated by the photoresist film 20 is minimum at the center of the photoresist film 20 and gradually increases from the center toward the outer edge. Thus, as shown in FIG12(c), the shape of the developed photoresist film 20 can be made to be a shape that gradually slopes from the center toward the outer edge.

[0111] <Variation Example 6>

[0112] Another variation of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG13(a) is a top view showing the pattern forming region A in this variation. FIG13(b) is a diagram showing the intensity of light irradiated onto the photoresist film 20 when light is irradiated onto the photoresist film 20 through the photomask 1A of this variation. FIG13(c) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this variation.

[0113] As shown in Figure 13(a), in this modified example, when the pattern forming area A is viewed from the top, an overlapping area 10, which overlaps the semi-transparent film 3 and the light-shielding film 5, is formed in the central area 80 of the pattern forming area A. Outside the central area 80, areas 81 are formed such that all areas 81 have: the overlapping area 10 with the semi-transparent film 3 and the light-shielding film 5 overlapping, and multiple light-transmitting areas 16 without the light-shielding film 5 and the semi-transparent film 3. Areas 81 are formed such that their area increases as the light-transmitting areas 16 move outward from the pattern forming area A. Furthermore, a first semi-transparent portion 82 is formed in a ring shape on the outer periphery of area 81. Additionally, a second semi-transparent portion 83 is formed in a ring shape on the outer periphery of the first semi-transparent portion 82. The first semi-transparent portion 82 is designed to have a lower transmittance compared to the second semi-transparent portion 83. In this modified example, the first area D1 is located inside the central area 80. In this variation, the second region D2 is located within the non-overlapping region 11 formed on the outer edge of the pattern forming region A.

[0114] With this configuration, as shown in FIG13(b), the intensity of light irradiated by the photoresist film 20 is minimum at the center of the photoresist film 20 and gradually increases from the center toward the outer edge. Thus, as shown in FIG13(c), the developed photoresist film 20 can be shaped to gradually tilt from the center toward the outer edge.

[0115] <Variation Example 7>

[0116] Another variation of the pattern forming region A of the photomask 1A in Embodiment 1 will be described. FIG14(a) is a top view showing the pattern design of the pattern forming region A of the photomask 1A formed in this variation, and FIG14(b) is a cross-sectional view of the photomask 1A of this variation obtained by cutting the transparent substrate 2 with a vertical plane. FIG15(a) is a diagram showing the intensity of the light irradiated on the photoresist film 20 when light is irradiated on the photoresist film 20 through the photomask 1A of this variation, and FIG15(b) is a diagram showing the shape of the photoresist film 20 after exposure and development through the photomask 1A of this variation.

[0117] As shown in Figure 14(a), in this modified example, when the pattern forming area A is viewed from the top, an overlapping area 10 is formed in the central area 90 of the pattern forming area A, where the semi-permeable membrane 3 and the light-blocking membrane 5 overlap. Outside the central area 90, the first semi-permeable portion 91, the second semi-permeable portion 92, the third semi-permeable portion 93, and the fourth semi-permeable portion 94 are formed sequentially from the inside in a ring shape. The first semi-permeable portion 91, the second semi-permeable portion 92, the third semi-permeable portion 93, and the fourth semi-permeable portion 94 are composed of the semi-permeable membrane 3. As shown in Figure 14(b), among the first semi-permeable portion 91, the second semi-permeable portion 92, the third semi-permeable portion 93, and the fourth semi-permeable portion 94, the first semi-permeable portion 91 has the largest membrane thickness, while the membrane thickness of the second semi-permeable portion 92, the third semi-permeable portion 93, and the fourth semi-permeable portion 94 decreases sequentially. Therefore, the light transmittance of the first semi-transparent section 91 is the smallest, and the light transmittance of the second semi-transparent section 92, the third semi-transparent section 93, and the fourth semi-transparent section 94 increases in sequence.

[0118] With this configuration, as shown in FIG15(a), the intensity of light irradiated by the photoresist film 20 is minimum at the center of the photoresist film 20 and gradually increases from the center toward the outer edge. Thus, as shown in FIG15(b), the shape of the developed photoresist film 20 becomes a shape that gradually tilts from the center toward the outer edge.

[0119] As described above, the mask 1A of this modified example has an overlapping region 10 in the center of the pattern forming region A, which is formed by stacking the patterns of the semi-transparent film 3 and the light-shielding film 5. In addition, in the photomask 1A of this modified example, a plurality of semi-transparent portions with different light transmittance (i.e., the first semi-transparent portion 91, the second semi-transparent portion 92, the third semi-transparent portion 93, and the fourth semi-transparent portion 94) are formed toward the outer periphery of the pattern forming region A in a manner that surrounds the overlapping region 10. Among the aforementioned plurality of semi-transparent portions, the light transmittance increases toward the outer edge of the pattern forming region A.

[0120] To clarify, in the photomask 1A described above, although the overlapping region 10 formed in the central region 90 of the pattern forming region A is circular, and the first semi-transparent portion 91, the second semi-transparent portion 92, the third semi-transparent portion 93, and the fourth semi-transparent portion 94 are annular, the configuration is not limited to this. That is, the photomask 1A of this modified example has an overlapping region 10 in the central part of the pattern forming region A, and the transmittance gradually increases towards the outer periphery of the pattern forming region A in a manner that surrounds the overlapping region 10, thus forming a plurality of semi-transparent portions. For example, the overlapping region 10 and the plurality of semi-transparent portions may also be elliptical, rectangular, or the like.

[0121] Furthermore, although the first semi-transparent portion 91, the second semi-transparent portion 92, the third semi-transparent portion 93, and the fourth semi-transparent portion 94 in the aforementioned photomask 1A are composed of semi-transparent films 3 having the same transmittance, the photomask 1A of this modified example is not limited to this configuration. The first semi-transparent portion 91, the second semi-transparent portion 92, the third semi-transparent portion 93, and the fourth semi-transparent portion 94 can be composed of semi-transparent films with different light transmittances, thereby forming a configuration in which the light transmittance increases towards the outer periphery of the pattern forming region A.

[0122] Next, the manufacturing method of the photomask 1A in this modified example will be described. Figures 16-18 This is a diagram used to illustrate the manufacturing method of photomask 1A. (See diagram below.) Figure 16 As shown, in the fabrication of photomask 1B, firstly, a mask blank 50 with a light-shielding film 5 formed thereon is prepared on the surface of the transparent substrate 2 (hereinafter referred to as step 1 R1). Next, the light-shielding film 5 formed on the mask blank 50 is patterned (hereinafter referred to as step 2 R2). In step 2 R2, the light-shielding film 5 is patterned in the shape of the overlapping region 10 (i.e., circular).

[0123] Next, a semi-transparent film 3 is formed over the entire surface of the transparent substrate 2, including the light-shielding film 5 (hereinafter referred to as step 3 R3). Then, in step 3 R3, the semi-transparent film 3 is patterned (hereinafter referred to as step 4 R4). In step 4 R4, when viewed from above the transparent substrate 2, the shape of the outer edge of the semi-transparent film 3 is patterned to become the shape of the outer edge of the first semi-transparent portion 91. Specifically, in step 4 R4, a photoresist film is formed on the surface of the semi-transparent film 3, and the photoresist film is drawn using a drawing apparatus. Then, a photoresist pattern is formed by developing and exposing the photoresist film, and the semi-transparent film 3 is etched using the photoresist pattern as a mask, thereby removing a portion of the semi-transparent film to form the pattern of the semi-transparent film 3. Afterwards, the remaining photoresist film is removed.

[0124] Next, as Figure 17 As shown, a semi-permeable film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter referred to as step 5 R5). This will be explained further. Figure 17 For ease of understanding, the semi-permeable membrane 3 formed in step 5 is patterned with different shading lines than the semi-permeable membrane 3 formed in step 3 (R3). This difference in shading lines is also applied to the following steps. Then, the semi-permeable membrane 3 formed in step 5 (R5) is patterned (hereinafter referred to as step 6 (R6)). In step 6 (R6), when viewed from above the transparent substrate 2, the shape of the outer edge of the semi-permeable membrane 3 is patterned to resemble the outer edge of the second semi-permeable portion 92. The specific method for step 6 (R6) is the same as that for step 4 (R4).

[0125] Next, a semi-permeable film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter referred to as step 7, R7). Then, the semi-permeable film 3 formed in step 7, R7, is patterned (hereinafter referred to as step 8, R8). In step 8, when the transparent substrate 2 is viewed from above, the shape of the outer edge of the semi-permeable film 3 is patterned to become the shape of the outer edge of the third semi-permeable portion 93. The specific method of step 8, R8, is the same as that of step 4, R4.

[0126] Next, as Figure 18 As shown, a semi-transparent film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter referred to as step 9, R9). Then, the semi-transparent film 3 formed in step 9, R9, is patterned (hereinafter referred to as step 10, R10). In step 10, when viewed from above the transparent substrate 2, the pattern is formed such that the outer edge of the semi-transparent film 3 becomes the outer edge of the fourth semi-transparent portion 94. The specific method of step 10, R10, is the same as that of step 4, R4. Through the above processes, a photomask 1A as shown in FIG. 14(b) can be fabricated, that is, a photomask 1A with the largest film thickness in the first semi-transparent portion 91, and the film thickness decreasing sequentially in the second semi-transparent portion 92, the third semi-transparent portion 93, and the fourth semi-transparent portion 94.

[0127] Next, the film thickness of the semi-permeable membrane 3 formed in the third step R3, the fifth step R5, the seventh step R7, and the ninth step R9 will be explained. In setting the film thickness, firstly, the transmittance of light from the fourth semi-permeable portion 94 is set to the desired transmittance in the film thickness of the semi-permeable membrane 3 formed in the ninth step R9. Secondly, the transmittance in the region formed by the multilayer stacking of the semi-permeable membrane is expressed by the following formula (1).

[0128] T=T0×exp(-4πkz / λ)…(1)

[0129] In the above formula (1), T is the transmittance, T0 is a value uniquely determined from the optical properties of the substrate glass (i.e., the transparent substrate 2) and the semi-permeable film, λ is the wavelength of the exposure light, k is the extinction coefficient of the semi-permeable film, and z is the film thickness of the semi-permeable film. As shown in the above formula (1), when T0, λ, and k are constant, the transmittance of the region formed by the stacking of multiple semi-permeable films is determined by the film thickness of the semi-permeable film. In the 9th step R9, the film thickness of the semi-permeable film is set such that the transmittance calculated by the above formula (1) is the transmittance of the 4th semi-permeable portion 94. To explain, since the 4th semi-permeable portion 94 is composed of one layer of semi-permeable film 3, λ in the above formula (1) is the film thickness of the semi-permeable film 3 formed in the 9th step R9. The transmittance of the 4th semi-permeable portion 94 formed in the 9th step R9 is the reference for the transmittance of the photomask 1A in this modified example.

[0130] Next, the thickness of the semi-permeable membrane 3 formed in step 7 R7 is set such that the light transmittance of the third semi-permeable portion 93 is the desired transmittance. The light transmittance of the third semi-permeable portion 93 is determined by the total thickness of the semi-permeable membranes 3 formed in steps 7 R7 and 9 R9. That is, in order to achieve the desired transmittance of the third semi-permeable portion 93, the thickness of the semi-permeable membrane 3 formed in step 9 R9 is taken into consideration, and the thickness of the semi-permeable membrane 3 formed in step 7 R7 is set in advance. More specifically, using the above formula (1), the thickness of the semi-permeable membrane 3 formed in step 9 R9 and the thickness of the semi-permeable membrane 3 with the desired transmittance of the third semi-permeable portion 93 are obtained. The thickness of the semi-permeable membrane 3 formed in step 7 R7 is calculated from these thicknesses, and the semi-permeable membrane 3 is formed in step 7 R7.

[0131] Next, the thickness of the semipermeable membrane 3 formed in step 5 R5 is set such that the light transmittance of the second semipermeable portion 92 is the desired transmittance. The light transmittance of the second semipermeable portion 92 is determined by the total thickness of the semipermeable membrane 3 formed in steps 5 R5, 7 R7, and 9 R9. More specifically, using the above formula (1), the thickness of the semipermeable membrane 3 formed in steps 7 R7 and 9 R9, and the thickness of the semipermeable membrane 3 with the desired transmittance of the second semipermeable portion 92 are obtained. The thickness of the semipermeable membrane 3 formed in step 5 R5 is calculated from these thicknesses, and the semipermeable membrane 3 is formed in step 5 R5.

[0132] Finally, the thickness of the semi-permeable membrane 3 formed in the third step R3 is set such that the light transmittance of the first semi-permeable portion 91 is the desired transmittance. The light transmittance of the first semi-permeable portion 91 is determined by the total thickness of the semi-permeable membrane 3 formed in the third step R3, the fifth step R5, the seventh step R7, and the ninth step R9. More specifically, using the above formula (1), the thickness of the permeable membrane 3 formed in the fifth step R5, the seventh step R7, and the ninth step R9, and the thickness of the semi-permeable membrane 3 with the desired transmittance of the first semi-permeable portion 91 are obtained. The thickness of the semi-permeable membrane 3 formed in the third step R3 is calculated from these thicknesses, and the semi-permeable membrane 3 is formed in the third step R3.

[0133] [Implementation Method 2]

[0134] Other embodiments of the present invention will be described below. For ease of explanation, components with the same function as those described in the above embodiments will be marked with the same symbols, and the description will not be repeated.

[0135] Figure 19(a) is a top view showing the pattern design of the pattern forming region A of the photomask 1B formed in this embodiment, and Figure 19(b) is a cross-sectional view showing the structure of the photomask 1B, which is a photomask 1B cut with a vertical plane from the transparent substrate 2. Although the photomask 1A in Embodiment 1 is a bottom-type photomask, the photomask 1B in this embodiment is a top-type photomask.

[0136] As shown in FIG19(b), the photomask 1B has a structure having the following regions: a region formed by sequentially stacking a transparent substrate 2, a light-shielding film 5, and a semi-transparent film 3; and a region on which the semi-transparent film 3 is stacked. It should be noted that the light-shielding film 5 and the semi-transparent film 3 are not disposed in all regions of the transparent substrate 2, but are appropriately disposed in the pattern forming region A. It should also be noted that the photomask 1B in this embodiment is not limited to having the pattern forming region A shown in FIG19(a), and may also have the pattern forming region A described in the above variations 1 to 7.

[0137] Similar to photomask 1A, in the pattern forming area A of photomask 1B, a circular light-shielding film 5 is located on the surface of the transparent substrate 2. A circular semi-transparent film 3 with a diameter longer than the light-shielding film is formed on the upper surface of the light-shielding film 5 and the upper surface of the transparent substrate 2, with the same position as the center of the light-shielding film 5.

[0138] Therefore, in the pattern forming region A of the photomask 1B, as shown in FIG19(a), an overlapping region 10, in which the light-shielding film 5 and the semi-transparent film 3 are superimposed at the center of the center of the pattern forming region A, is formed in a circular shape. Furthermore, a non-overlapping region 11, in which only the semi-transparent film 3 is formed, is formed in the pattern forming region A to surround the overlapping region 10. In other words, a non-overlapping region 11 is formed at the outer edge of the pattern forming region A.

[0139] Using this configuration, similar to photomask 1A in Embodiment 1, the light transmittance is low in the central portion of the pattern forming region A, while the light transmittance increases towards the outer edge of the pattern forming region A. In other words, when a region containing a predetermined area of ​​the central portion of the pattern forming region A is designated as the first region D1, and a region containing a predetermined area of ​​the outer edge of the pattern forming region A is designated as the second region D2, the transmittance in the second region D2 is higher than the transmittance in the first region D1.

[0140] Next, the manufacturing method of photomask 1B will be explained. Figures 20-22 A diagram applicable to illustrating the manufacturing method of photomask 1B. (e.g.) Figure 20As shown, in the fabrication of photomask 1B, firstly, a mask blank 50 with a light-shielding film 5 formed on the surface of a transparent substrate 2 is prepared (hereinafter referred to as step Q1). Next, a first photoresist film 60 is formed on the surface of the mask blank 50 (hereinafter referred to as step Q2). Then, the first photoresist film 60 is drawn using a drawing apparatus to form a first photoresist pattern (hereinafter referred to as step Q3). In step Q3, when the mask blank 50 is viewed from above, the first photoresist film 60 is drawn in such a way that the developed first photoresist film 60 becomes the shape of the overlapping area 10 (i.e., circular).

[0141] Next, by developing the first photoresist film 60, the area 60A depicted in the first photoresist film 60 is removed, thereby forming the first photoresist pattern (hereinafter referred to as step Q4). Steps Q3 and Q4 are steps for forming the first photoresist pattern.

[0142] Next, as Figure 21 As shown, the light-shielding film 5 is etched using a patterned first photoresist film 60 (i.e., the first photoresist pattern) as a mask, and a portion of the light-shielding film 5 is removed to form the pattern of the light-shielding film 5 (hereinafter referred to as step 5 Q5). Next, the remaining first photoresist film 60 is removed (hereinafter referred to as step 6 Q6).

[0143] Next, a semi-transparent film 3 is formed on the entire surface of the photomask containing the light-shielding film 5 (hereinafter referred to as step 7 Q7). Then, a second photoresist film 61 is formed on the surface of the semi-transparent film 3 (hereinafter referred to as step 8 Q8). Then, as... Figure 22 As shown, the second photoresist film 61 is drawn using a drawing apparatus (hereinafter referred to as step 9 P9). In step 9 P9, when the photomask is viewed from above, the outer edge of the second photoresist film 61 is drawn in a ring-shaped manner.

[0144] Next, the area 61A depicted in the second photoresist film 61 is removed by developing the second photoresist film 61, thereby forming the second photoresist pattern (hereinafter referred to as step 10 Q10). Steps 9 Q9 and 10 Q10 are steps for forming the second photoresist pattern.

[0145] Next, using the patterned second photoresist film 61 (i.e., the second photoresist pattern) as a mask, a portion of the semi-transparent film 3 is removed (hereinafter referred to as step 11 Q11). Finally, the remaining second photoresist film 61 is removed (hereinafter referred to as step 12 Q12).

[0146] Through the above process, a photomask 1B with the following pattern forming area can be produced, wherein the pattern forming area is an overlapping area 10 formed in a circle in the central part containing the center of the pattern forming area A, and a non-overlapping area 11 is formed in a manner that surrounds the overlapping area 10.

[0147] <Variation Example 8>

[0148] Although the photomask described as any of the above embodiments or variations utilizes the transmittance difference between the light-shielding film 5 and the semi-transparent film 3, or the transmittance difference resulting from the area ratio of the light-shielding film 5 and the semi-transparent film 3, the photomask of the present invention is not limited to this. A phase-shifting film can be applied in place of the semi-transparent film 3, or in combination with the semi-transparent film 3. The application of the phase-shifting film can be achieved by adjusting the phase difference of the phase-shifting film on the transparent substrate 2 and the transmittance of the phase-shifting film, and by setting the area where the phase effect is applied.

[0149] For example, in the photomask 1A shown in FIG2(a), the thickness of the phase shift film is adjusted such that the phase difference for the transparent substrate 2 is less than 100 degrees. The phase shift film is disposed between the overlapping region 10 with low transmittance and the non-overlapping region 11 with high transmittance. The exposure light of the exposure device passing through the boundary between the overlapping region 10 and the non-overlapping region 11 is adjusted by shifting towards the non-overlapping region 11 side through the phase effect.

[0150] Furthermore, in the photomask 1A shown in FIG14(a), a phase shift film may be formed between at least one of a plurality of semi-transparent portions (i.e., the first semi-transparent portion 91, the second semi-transparent portion 92, the third semi-transparent portion 93, and the fourth semi-transparent portion 94) with different light transmittances formed on the periphery of the overlapping region 10, and / or near the boundary of the adjacent semi-transparent portions.

[0151] In addition, in the patterned photomask 1A formed by reusing the overlapping region 10 and the non-overlapping region 11 shown in FIG8(a), FIG9(a), FIG10(a), FIG11(a), FIG12(a), etc., a phase shift film can be formed near the boundary between the overlapping region 10 and the non-overlapping region 11.

[0152] As described above, by forming a phase-shifting film, the transmittance can be adjusted more finely. The result is that the resist shape formed on the substrate side through the photomask of this application can be more gently tilted.

[0153] To explain, even when using a phase-shifting film, if the materials of the phase-shifting film, the light-shielding film 5, and / or the semi-permeable film 3 are all of the same metal system, the manufacturing method described above can be applied, so the phase-shifting film can be used without any particular problems.

[0154] Furthermore, for example, in the photomask 1A of Embodiment 1, although it is a configuration formed by overlapping the overlapping region 10 with the light-shielding film 5 and the semi-transparent film 3, the aforementioned phase-shifting film can be used instead of the light-shielding film 5. That is, as long as the region where the phase-shifting film is formed has a lower transmittance than the non-overlapping region 11, in other words, it can be set in a region where the intensity of the transmitted exposure light is low, and it is suitable as long as the optical density OD value can be satisfied with 2.7 or more by using the stacking of the semi-transparent film 3 and the phase-shifting film.

[0155] [Implementation Method 3]

[0156] In the embodiments described above, a circular photomask is used for the pattern forming region A. However, the photomask of the present invention is not limited to this; the pattern forming region A can be formed in a desired shape by conforming to the shape of each pixel in the display device described above. For further details, please refer to... Figure 23 Explanation follows.

[0157] Figure 23 This is a top view showing the pattern forming region A of the photomask 1C in this embodiment. For example... Figure 23 As shown, the pattern forming region A of the photomask 1C is a regular pentagon. Within the pattern forming region A of the photomask 1C, an overlapping region 10, in which a light-shielding film 5 and a semi-transparent film 3 are superimposed at the center of the pattern forming region A, is also formed as a regular pentagon. Additionally, within the pattern forming region A, a non-overlapping region 11, in which only the semi-transparent film 3 is formed, is formed surrounding the overlapping region 10. In this modified example, the first region D1 is located within the overlapping region 10. In this modified example, the second region D2 is located within the non-overlapping region 11 formed at the outer edge of the pattern forming region A.

[0158] Using this configuration, if no exposure is performed through the photomask 1C, the intensity of light irradiated at the outer edge of the photoresist film 20 is greater than the intensity of light irradiated at the center of the photoresist film 20. Therefore, as shown in FIG3(b), the developed photoresist film 20 can be made to have a gently sloping outer edge. In other words, the photoresist film 20 can be made to slope gently from the center outwards.

[0159] It should be noted that although the pattern forming region A is described as a regular pentagon in this embodiment, the photomask of the present invention is not limited to this. In one embodiment of the photomask of the present invention, the pattern forming region A can be a pentagonal shape other than a regular pentagon, or a polygon other than a pentagon (e.g., a triangle, a rectangle, a hexagon, etc.). Furthermore, in one embodiment of the photomask of the present invention, the pattern forming region A has a pair of opposing straight lines and two curves connecting the two ends of the pair of opposing straight lines, and can also be a shape formed by the pair of opposing straight lines and the two curves. Additionally, in one embodiment of the photomask of the present invention, the pattern forming region A is a polygonal shape, and at least one side of the polygon can be a shape composed of a curve such as an arc.

[0160] <Variation Example 9>

[0161] In one embodiment of the present invention, the pattern forming region A of the photomask can be elliptical. For this purpose, see reference... Figure 24 Explanation follows.

[0162] Figure 24 This is a top view showing the photomask 1D pattern forming area A in this embodiment. For example... Figure 24 As shown, the pattern forming region A of the photomask 1D is elliptical. Within the pattern forming region A of the photomask 1D, an overlapping region 10, in which the light-shielding film 5 and the semi-transparent film 3 overlap, is formed in an elliptical shape at the center of the region containing the center of the pattern forming region A. Additionally, a non-overlapping region 11, in which only the semi-transparent film 3 is formed, is formed in the pattern forming region A, surrounding the overlapping region 10. In this modified example, the first region D1 is located within the overlapping region 10. In this modified example, the second region D2 is located within the non-overlapping region 11 formed at the outer edge of the pattern forming region A.

[0163] With this configuration, in the photomask 1D, the intensity of light irradiated at the outer edge of the photoresist film 20 is greater than the intensity of light irradiated at the central part of the photoresist film 20. Therefore, similar to the cross-section shown in FIG. 3(b), the developed photoresist film 20 can have a shape with a gradually tilted outer edge. In other words, the photoresist film 20 can be made to gradually tilt from the center outwards.

[0164] [Implementation Method 4]

[0165] In the above description, a positive photoresist film is exposed through the photomask of the present invention, thereby forming a photoresist shape that is convex relative to the substrate being transferred. This configuration will be explained here. The photomask of the present invention can also be used for negative photoresist films. In this case, the formed photoresist shape is concave relative to the substrate being transferred. This concavity has a gently sloping outer edge. This configuration will be described in detail below.

[0166] Figure 25 This diagram shows the shape of the negative photoresist film 84 on the transfer substrate after exposure and development through the photomask 1A described in Embodiment 1. As described in Embodiment 1, in the photomask 1A, the transmittance is low in the central portion of the pattern formation region A, and increases from the central portion outwards. By using the photomask 1A with this configuration to expose and develop the negative photoresist film 84, the shape is as follows... Figure 25 As shown, the photoresist film 84 after development is removed from the central portion where the intensity of the irradiated light is relatively low. Furthermore, since the intensity of the irradiated light increases from the central portion to the outer edge, the solubility of the developing solution for the photoresist film 84 decreases, resulting in a greater thickness of the remaining photoresist film 84. In other words, by using a photomask 1A on the negative photoresist film 84, the shape of the developed photoresist film 84 is made concave relative to the substrate being transferred, and it can achieve a shape where the area between the light-blocking region and the light-transmitting region is gently sloping.

[0167] [Implementation Method 5]

[0168] In the embodiments described above, a photomask with a patterned region A formed in a manner in which the intensity of light irradiated by the photoresist film 20 increases from the center outwards will be described. The photomask of the present invention is not limited to this. One embodiment of the photomask of the present invention may be configured such that the patterned region A is formed in a manner in which the intensity of light irradiated by the photoresist film 20 decreases from the center outwards. This will be explained using FIG. 26.

[0169] Figure 26(a) is a diagram showing the pattern design formed in the pattern forming region A of the photomask 1E in this embodiment, and Figure 26(b) is a cross-sectional view of the photomask 1E obtained by cutting the transparent substrate 2 with a vertical plane.

[0170] As shown in Figure 26(a), the pattern forming region A of the photomask 1E is circular. In the pattern forming region A of the photomask 1E, a light-transmitting portion 85, which allows light to pass through, is formed in a circular shape at the central portion containing the center of the pattern forming region A. Furthermore, as shown in Figures 26(a) and (b), a non-overlapping region 11 is formed in the pattern forming region A, in which only the semi-transparent film 3 is formed, surrounding the light-transmitting portion 85. Therefore, when a region of a predetermined area containing the central portion of the pattern forming region A is designated as the first region D1, and a region of a predetermined area in the outer edge of the pattern forming region A is designated as the second region D2, the transmittance in the second region D2 is lower than that in the first region D1. An overlapping region 10, formed by overlapping the light-shielding film 5, the etching blocking film 4, and the semi-transparent film 3, is formed on the outer side of the pattern forming region A, and becomes a light-shielding region.

[0171] In the photomask 1E with the above configuration, by having a light-transmitting portion 85 in the center of the pattern forming region A, the intensity of light irradiated by the central portion of the photoresist film 20 is increased. In addition, by forming a non-overlapping region 11 surrounding the light-transmitting portion 85, the intensity of light irradiated by the photoresist film 20 decreases from the center outwards.

[0172] Figure 27 This diagram shows the shape of the photoresist film 20 after exposure and development on the substrate through a photomask 1E. As shown in Figure 27, the photoresist film 20 on the substrate is exposed and developed through a photomask 1E. The developed photoresist film 20 has its central portion, where the intensity of the irradiated light increases, removed by development. Furthermore, the intensity of the irradiated light decreases from the central portion towards the outer edge, thus increasing the thickness of the remaining photoresist film 20. In other words, by using a photomask 1E with the photoresist film 20, the developed photoresist film 20 is made concave relative to the substrate and has a gently sloping shape between the light-blocking and light-transmitting areas.

[0173] Figure 28 This diagram shows the shape of the photoresist film 84 after it has been exposed and developed on the negative photoresist film 84 on the transfer substrate through a photomask 1E. As shown in Figure 28, the negative photoresist film 84 on the transfer substrate is exposed and developed through a photomask 1E, thereby making the developed photoresist film 84 have a shape with a gently sloping outer edge. In other words, the photoresist film 84 can be made to slope gently from the center to the outside.

[0174] Next, the manufacturing method of photomask 1E will be explained. Figures 29-31This diagram illustrates the manufacturing method of photomask 1E. (For example...) Figure 29 As shown, in the fabrication of photomask 1A, firstly, a mask blank 30 is prepared by sequentially stacking a semi-transparent film 3, etching a blocking film 4, and a light-shielding film 5 on the surface of a transparent substrate 2 (hereinafter referred to as the first step S1).

[0175] Next, a first photoresist film 40 is formed on the surface of the mask blank 30 (hereinafter referred to as step S2). Then, the first photoresist film 40 is drawn using a drawing apparatus (hereinafter referred to as step S3). In step S3, when the mask blank 30 is viewed from above, the first photoresist film 40 in the area corresponding to the pattern forming area A is drawn by removing it through development.

[0176] Next, the area 40A depicted in the first photoresist film 40 is removed by developing the first photoresist film 40, thereby forming the first photoresist pattern (hereinafter referred to as step S4). Step S3 and step S4 are steps for forming the first photoresist pattern.

[0177] Next, as Figure 30 As shown, the light-shielding film 5 is etched using a patterned first photoresist film 40 (i.e., the first photoresist pattern) as a mask, thereby forming the pattern of the light-shielding film 5 (hereinafter referred to as step S5). In step S5, the light-shielding film 5 is etched away by using a solvent that does not dissolve the etching barrier film 4 as the solvent for etching the light-shielding film 5.

[0178] Next, using the first photoresist pattern and the light-shielding film 5 as a mask, the etching barrier film 4 is removed (hereinafter referred to as step S6). Then, the remaining first photoresist film 40 is removed (hereinafter referred to as step S7).

[0179] Next, a second photoresist film 41 is formed on the entire surface of the photomask containing the light-shielding film 5 (hereinafter referred to as step S8).

[0180] Next, as Figure 31 As shown, the second photoresist film 41 is drawn using a drawing apparatus (hereinafter referred to as step 9, S9). In step 9, when the photomask is viewed from above, the second photoresist film 41 is drawn such that only the areas corresponding to the overlapping region 10 and the non-overlapping region 11 remain after development. It is also important to pre-reflect the possibility of pattern misalignment caused by the difference in the guideline of the drawing apparatus at this time into the design pattern, and to minimize the impact of pattern misalignment.

[0181] Next, the area 41A depicted in the second photoresist film 41 is removed by developing the second photoresist film 41, thereby forming the second photoresist pattern (hereinafter referred to as step S10). Steps S8, S9 and S10 are steps for forming the second photoresist pattern.

[0182] Next, the semi-permeable film 3 is etched using the patterned second photoresist film 41 (i.e., the second photoresist pattern) as a mask, thereby forming the pattern of the semi-permeable film 3 (hereinafter referred to as step 11, S11). Finally, the remaining second photoresist film 41 is removed (hereinafter referred to as step 12, P12).

[0183] Through the above process, a photomask 1E with the following pattern forming region A can be produced, wherein the pattern forming region A is formed in a circular shape at the center of the center of the pattern forming region A, and a non-overlapping region 11 is formed in a manner that surrounds the light-transmitting part 85.

[0184] [Implementation Method 6]

[0185] In embodiment 5, a bottom-type photomask 1E will be described. This bottom-type photomask 1E has a light-transmitting region at the center of the pattern forming region A, and a non-overlapping region is formed to encompass this light-transmitting region. However, the photomask of the present invention is not limited to this. In another embodiment of the present invention, the photomask can also be a top-type photomask, which has a light-transmitting region at the center of the pattern forming region A, and a non-overlapping region is formed to surround this light-transmitting region. This will be described in detail below.

[0186] Figure 32(a) is a diagram showing the pattern design of the pattern forming region A of the photomask 1F formed in this embodiment, and Figure 32(b) is a cross-sectional view of the photomask 1F obtained by cutting the transparent substrate 2 with a vertical plane.

[0187] As shown in Figure 32(a), in the pattern forming region A of the photomask 1F, a light-transmitting portion 85 is formed in a circular shape at the center of the center of the pattern forming region A. Furthermore, as shown in Figures 32(a) and (b), a non-overlapping region 11 is formed in the pattern forming region A, in which only a semi-transparent film 3 is formed to surround the light-transmitting portion 85. Moreover, an overlapping region 10, formed by overlapping a light-shielding film 5 and a semi-transparent film 3, is formed outside the pattern forming region A to surround the non-overlapping region 11.

[0188] Using this configuration, similar to the photomask 1E in Embodiment 5, the light transmittance is high in the central portion of the pattern forming region A, while the light transmittance decreases towards the outer edge of the pattern forming region A. In other words, when a region containing a predetermined area of ​​the central portion of the pattern forming region A is designated as the first region D1, and a region containing a predetermined area of ​​the outer edge of the pattern forming region A is designated as the second region D2, the transmittance in the second region D2 is lower than that in the first region D1.

[0189] Next, the manufacturing method of photomask 1F will be explained. Figures 33-35 This diagram illustrates the manufacturing method of photomask 1F. (For example...) Figure 33 As shown, in the fabrication of photomask 1B, firstly, a mask blank 50 with a light-shielding film 5 formed on the surface of a transparent substrate 2 is prepared (hereinafter referred to as step 1 T1). Next, a first photoresist film 60 is formed on the surface of the mask blank 50 (hereinafter referred to as step 2 T2). Then, the first photoresist film 60 is drawn using a drawing apparatus to form a first photoresist pattern (hereinafter referred to as step 3 T3). In step 3 T3, when the mask blank 50 is viewed from above, the first photoresist film 60 in the area corresponding to the pattern formation area A is removed by development, and so on.

[0190] Next, the area 60A depicted in the first photoresist film 60 is removed by developing the first photoresist film 60, thereby forming the first photoresist pattern (hereinafter referred to as step 4 T4). Step 3 T3 and step 4 T4 are steps for forming the first photoresist pattern.

[0191] Next, as Figure 34 As shown, the light-shielding film 5 is etched using the patterned first photoresist film 60 (i.e., the first photoresist pattern) as a mask, thereby removing a portion of the light-shielding film 5 to form the pattern of the light-shielding film 5 (hereinafter referred to as step 5 T5). Then, the remaining first photoresist film 60 is removed (hereinafter referred to as step 6 T6).

[0192] Next, a semi-transparent film 3 is formed on the entire surface of the photomask containing the light-shielding film 5 (hereinafter referred to as step 7 T7). Then, a second photoresist film 61 is formed on the surface of the semi-transparent film 3 (hereinafter referred to as step 8 T8). Afterwards, as... Figure 35As shown, the second photoresist film 61 is drawn using a drawing apparatus (hereinafter referred to as step 9 T9). It is important that any potential for pattern misalignment due to differences in the guideline of the drawing apparatus be pre-reflected in the design pattern, and that the impact of pattern misalignment be minimized. In step 9 T9, when viewing the photomask from above, the second photoresist film 61 is drawn such that only the areas corresponding to the overlapping region 10 and the non-overlapping region 11 remain.

[0193] Next, the area 61A depicted in the second photoresist film 61 is removed by developing the second photoresist film 61, thereby forming the second photoresist pattern (hereinafter referred to as step 10 T10). Steps 9 T9 and 10 T10 are steps for forming the second photoresist pattern.

[0194] Next, using the patterned second photoresist film 61 (i.e., the second photoresist pattern) as a mask, a portion of the semi-transparent film 3 is removed (hereinafter referred to as step 11, T11). Finally, the remaining second photoresist film 61 is removed (hereinafter referred to as step 12, T12).

[0195] Through the above process, a photomask 1F with a pattern forming region A can be fabricated. The pattern forming region A is formed in a circular shape at the center of the center containing the pattern forming region A, and a non-overlapping region 11 is formed in a manner that surrounds the overlapping region 10.

[0196] <Variation Example 10>

[0197] A modified example of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 36This is a top view of the pattern forming area A in this modified example. As shown in FIG36, in this modified example, when the pattern forming area A is viewed from the top, a grid pattern area 12 is formed with alternating rectangular light-transmitting portions 85 and rectangular non-overlapping areas 11. The rectangular light-transmitting portions 85 do not have a semi-transparent film 3 and a light-shielding film 5, and the rectangular non-overlapping areas 11 do not overlap with the light-shielding film 5 on the semi-transparent film 3. In addition, in this modified example, an area is formed on the outer periphery of the grid pattern area 12 where the light-shielding film 5 does not overlap with the semi-transparent film 3. That is, the pattern forming area A in this modified example has: (1) a mixed area including a light-transmitting portion 85 without a semi-transparent film 3 and a light-shielding film 5, and a non-overlapping area 11 where the light-shielding film 5 does not overlap with the semi-transparent film 3; and (2) a non-mixed area formed at the outer edge of the aforementioned mixed area where the light-shielding film 5 does not overlap with the semi-transparent film 3. In this variation, the first region D1 exists within the grid pattern region 12 and is configured to include at least a rectangular light-transmitting portion 85 located at the center of the pattern forming region A. That is, the first region D1 can be a region containing only the light-transmitting portion 85 located at the center of the pattern forming region A, or it can be a region containing the light-transmitting portion 85 and the surrounding non-overlapping region 11. In this variation, the second region D2 is located outside the grid pattern region 12, i.e., within the non-overlapping region 11 formed at the outer edge of the pattern forming region A.

[0198] Using this configuration, by having a light-transmitting portion 85 in the center of the pattern forming region A, the intensity of light irradiated by the central portion of the photoresist film 20 increases as the area ratio of the light-transmitting portion 85 increases. Furthermore, by having only a semi-transparent film 3 at the outer edge of the pattern forming region A, surrounding the grid pattern region 12, the intensity of light irradiated by the photoresist film 20 decreases as it moves from the center outwards. Therefore, the developed photoresist film 20 has a shape with a gently sloping outer edge. In other words, by using the photomask of this modified example, the photoresist film 20 can be made to gently slope from the center outwards.

[0199] <Variation Example 11>

[0200] Another variation of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 37 This is a top view showing the pattern-forming area A in this variation. For example... Figure 37As shown, in this modified example, when the pattern forming area A is viewed from above, a light-transmitting portion 85 without the semi-transparent film 3 and the light-shielding film 5 is formed in the central region 14 of the pattern forming area A. Furthermore, in this modified example, region 15 is formed outside the central region 14. Region 15 has a light-transmitting portion 85 without the semi-transparent film 3 and the light-shielding film 5, and multiple non-overlapping regions 11 where the light-shielding film 5 does not overlap with the semi-transparent film 3. In region 15, the non-overlapping regions 11 are formed such that their area increases towards the outer edge. Additionally, regions where the light-shielding film 5 does not overlap with the semi-transparent film 3 are formed on the outer periphery of region 15. In this modified example, the first region D1 is located inside the central region 14. In this modified example, the second region D2 is located outside region 15, that is, within the non-overlapping regions 11 formed at the outer edge of the pattern forming area A.

[0201] With this configuration, since the light-transmitting portion 85 is formed in the central region 14, the intensity of light irradiated by the central portion of the photoresist film 20 increases. Furthermore, as the area ratio of the non-overlapping regions 11 increases from the central region 14 outwards, the intensity of light irradiated by the photoresist film 20 decreases. Therefore, the developed photoresist film 20 can be made to have a shape with a gently sloping outer edge. In other words, the photoresist film 20 can be made to slope gently from the center outwards.

[0202] <Variation Example 12>

[0203] Another variation of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 38 This is a top view showing the pattern-forming area A in this variation. For example... Figure 38 As shown in this modified example, when the pattern forming area A is viewed from the top, rectangular light-transmitting portions 85 and rectangular non-overlapping areas 11 are alternately arranged in the central part of the pattern forming area A. The rectangular light-transmitting portions 85 do not contain a semi-transparent film 3 or a light-shielding film 5, and the rectangular non-overlapping areas 11 do not have a light-shielding film 5 overlapping the semi-transparent film 3. Furthermore, a region containing only the semi-transparent film 3 is formed outside the region where the rectangular light-transmitting portions 85 and rectangular non-overlapping areas 11 are alternately arranged. Moreover, multiple rectangular overlapping areas 86, which overlap the light-shielding film 5 and the semi-transparent film 3, are formed at the outer edge of the region containing only the semi-transparent film 3. In this modified example, the first region D1 is a region where the light-transmitting portions 85 and non-overlapping areas 11 are alternately arranged, and is set on at least a portion of the region including the light-transmitting portions 85. In this modified example, the second region D2 is a region formed on the outer edge of the pattern forming area A, and is set on at least a portion of the region including the overlapping areas 86.

[0204] With this configuration, since the light-transmitting portion 85 and the non-overlapping portion 11 are alternately arranged in the central part of the pattern forming region A, and a region containing only the semi-transparent film 3 is formed at the outer edge of the pattern forming region A, the intensity of light irradiated by the photoresist film 20 is greatest in the center of the photoresist film 20 and gradually decreases from the center to the outer edge. Therefore, the shape of the developed photoresist film 20 becomes a shape that gradually slopes from the center towards the outer edge.

[0205] <Variation Example 13>

[0206] Another variation of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 39 This is a top view showing the pattern-forming area A in this variation. For example... Figure 39 As shown, in this modified example, when the pattern forming area A is viewed from above, a light-transmitting portion 85 is formed in the central region 17 of the pattern forming area A, where neither the semi-transparent film 3 nor the light-blocking film 5 exists. Furthermore, in this modified example, radially extending regions 87 are formed in the light-transmitting portion 85 from the central region 17 towards the outer edge of the pattern forming area A. The radially extending regions 87 narrow in width as they approach the outer edge of the pattern forming area A. In this modified example, the first region D1 is located inside the central region 17. In this modified example, the second region D2 is located at the outer edge of the pattern forming area A and is located on at least a portion of it, including the non-overlapping region 11. That is, the pattern forming area A of this modified example has: (1) a non-mixed area (light-transmitting part 85) where there is no semi-permeable membrane 3 and light-shielding membrane 5; and (2) a mixed area 78 formed on the outer edge of the aforementioned non-mixed area, which includes the area where there is no semi-permeable membrane 3 and light-shielding membrane 5, and a non-overlapping area where the light-shielding membrane 5 does not overlap with the semi-permeable membrane 3.

[0207] Using this configuration, a light-transmitting portion 85 is formed in the central region 17 of the pattern forming region A. The light-transmitting portion 85 extends radially from the central region 17 to the outer edge of the pattern forming region A. The intensity of light irradiated by the photoresist film 20 is greatest in the center of the photoresist film 20 and gradually decreases from the center towards the outer edge. As a result, the shape of the developed photoresist film 20 becomes a shape that gradually slopes from the center towards the outer edge.

[0208] <Variation Example 14>

[0209] Another variation of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 40 This is a top view showing the pattern-forming area A in this variation. For example... Figure 40As shown, in this modified example, when the pattern forming area A is viewed from above, a light-transmitting portion 85 without the semi-transparent film 3 and the light-blocking film 5 is formed in the central region 88 of the pattern forming area A. Furthermore, in this modified example, from the central region 88 to the outer edge of the pattern forming area A, the light-transmitting portion forms a vortex-shaped region 89 extending in a spiral pattern. Non-overlapping regions 11 are formed between the plurality of vortex-shaped regions 89. There are also cases where the width of the vortex-shaped regions 89 narrows as they approach the outer edge of the pattern forming area A. In this modified example, the first region D1 is located inside the central region 88. In this modified example, the second region D2 is a region at the outer edge of the pattern forming area A, and is located on at least a portion of it in a manner that includes the non-overlapping regions 11.

[0210] Using this configuration, a light-transmitting portion 85 is formed in the central region 88 of the pattern forming region A, and a light-transmitting portion 85 extending in a spiral shape from the central region 88 to the outer edge of the pattern forming region A is also formed. The intensity of light irradiated by the photoresist film 20 is greatest in the center of the photoresist film 20 and gradually decreases from the center toward the outer edge. As a result, the shape of the developed photoresist film 20 becomes a shape that gradually tilts from the center toward the outer edge.

[0211] <Variation Example 15>

[0212] Another variation of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 41 This is a top view showing the pattern-forming area A in this variation. For example... Figure 41 As shown in this modified example, when the pattern forming area A is viewed from the top, a light-transmitting portion 85 without the semi-transparent film 3 and the light-shielding film 5 is formed in the central region 102 of the pattern forming area A. An overlapping region 10 and a region 103 are formed on the outer side of the central region 102. The overlapping region 10 overlaps the semi-transparent film 3 and the light-shielding film 5; the region 103 has multiple light-transmitting portions 85 without the light-shielding film 5 and the semi-transparent film 3. The overlapping region 103 is formed such that its area increases towards the outer side of the pattern forming area A. Furthermore, a first semi-transparent portion 100 is formed in a ring shape around the outer periphery of the region 103. Additionally, a second semi-transparent portion 101 is formed in a ring shape around the outer periphery of the first semi-transparent portion 100. Compared to the second semi-transparent portion 101, the first semi-transparent portion 100 is designed with a higher transmittance. In this modified example, the first region D1 is located inside the central region 102. In this variation, the second region D2 is located within the non-overlapping region 11 formed by the outer edge of the pattern forming region A.

[0213] Using this configuration, a light-transmitting portion 85 is formed in the central region 102 of the pattern forming region A, and a region 103 with an overlapping region 10 and a light-transmitting portion 85 is formed on the outer side of the central region 102. A first semi-transparent portion 100 is formed on the outer periphery of the region 103. Therefore, the intensity of light irradiated by the photoresist film 20 is greatest in the center of the photoresist film 20 and gradually decreases from the center toward the outer edge. As a result, the shape of the developed photoresist film 20 becomes a shape that gradually tilts from the center toward the outer edge.

[0214] <Variation Example 16>

[0215] Another variation of the pattern forming region A of the photomask 1F in Embodiment 6 will be described. Figure 42 This is a top view showing the pattern design formed on the photomask pattern forming area A of this variant example. Figure 42 As shown in this modified example, when the pattern forming area A is viewed from the top, a light-transmitting portion 85 without the semi-transparent membrane 3 and the light-blocking membrane 5 is formed in the central region 110 of the pattern forming area A. On the outer side of the central region 110, the first semi-transparent portion 111, the second semi-transparent portion 112, the third semi-transparent portion 113, and the fourth semi-transparent portion 114 are formed in a ring shape from the inner side. The first semi-transparent portion 111, the second semi-transparent portion 112, the third semi-transparent portion 113, and the fourth semi-transparent portion 114 are composed of the semi-transparent membrane 3. Among the first semi-transparent portion 111, the second semi-transparent portion 112, the third semi-transparent portion 113, and the fourth semi-transparent portion 114, the first semi-transparent portion 111 has the smallest membrane thickness, and the membrane thickness of the second semi-transparent portion 112, the third semi-transparent portion 113, and the fourth semi-transparent portion 114 increases sequentially. As a result, the light transmittance of the first semi-transparent section 111 becomes the greatest, and the light transmittance of the second semi-transparent section 112, the third semi-transparent section 113, and the fourth semi-transparent section 114 decreases in sequence.

[0216] Using this configuration, by increasing the thickness of the semi-permeable membrane in the pattern forming region A from the center outwards, the intensity of light irradiated by the photoresist film 20 is greatest at the center of the photoresist film 20 and gradually decreases from the center towards the outer edge. Therefore, the developed photoresist film 20 can be shaped to gradually slope from the center towards the outer edge.

[0217] As described above, the photomask of this modified example has a light-transmitting portion 85 in the central part of the pattern forming region A, where neither the semi-transparent film 3 nor the light-shielding film 5 exists. In addition, in the photomask of this modified example, a plurality of semi-transmitting portions (i.e., the first semi-transmitting portion 91, the second semi-transmitting portion 92, the third semi-transmitting portion 93, and the fourth semi-transmitting portion 94) with different light transmittances are formed toward the outer periphery of the pattern forming region A in a manner surrounding the light-transmitting portion 85. Among the aforementioned plurality of semi-transmitting portions, the light transmittance decreases toward the outer edge of the pattern forming region A.

[0218] To clarify, in the photomask 1A described above, the overlapping region 10 formed by the central region 110 of the pattern forming region A is circular. Although the first semi-transparent portion 111, the second semi-transparent portion 112, the third semi-transparent portion 113, and the fourth semi-transparent portion 114 are annular, the design is not limited to this. That is, the photomask of this modified example has a light-transmitting portion 85 in the central part of the pattern forming region A, and it is preferable to form a plurality of semi-transparent portions surrounding the light-transmitting portion 85 and gradually increasing the transmittance towards the outer periphery of the pattern forming region A. For example, the light-transmitting portion 85 and the plurality of semi-transparent portions can be elliptical, rectangular, or the like.

[0219] This invention is not limited to the embodiments described above. The scope of the claims may be varied. Embodiments obtained by appropriately combining the techniques disclosed in different embodiments are also included within the technical scope of this invention.

Claims

1. A photomask used in the manufacture of a display device for forming a desired resist pattern on a transfer substrate, characterized in that, A transparent substrate has multiple patterned regions, each comprising at least two regions with different transmittances and having a defined shape. The pattern-forming area is formed by layering at least the pattern of a semi-permeable membrane with the pattern of a light-shielding membrane. The transparent substrate has a light-transmitting portion in which the pattern formation area is not formed. The area containing a predetermined area at the center of the pattern forming area is designated as the first region, and the area containing a predetermined area at the outer edge of the pattern forming area is designated as the second region. The transmittance in the second region is higher than that in the first region.

2. A photomask used in the manufacture of a display device for forming a desired resist pattern on a transfer substrate, characterized in that, A transparent substrate has multiple patterned regions, each comprising at least two regions with different transmittances and having a defined shape. The pattern forming area has at least a light-transmitting portion and a semi-transparent portion formed by a semi-transparent membrane. In areas where the pattern formation area is not formed, a light-shielding portion is formed on the transparent substrate by laminating the semi-permeable film and the light-shielding film. The area containing a predetermined area at the center of the pattern forming area is designated as the first region, and the area containing a predetermined area at the outer edge of the pattern forming area is designated as the second region. The transmittance in the second region is lower than that in the first region. (1) When viewed from above, the pattern forming area is formed such that the transmittance gradually decreases from the center of the pattern forming area toward the outer edge as having: a light-transmitting portion including the light-blocking film and the light-transmitting film not present, and a non-overlapping portion in which the light-blocking film does not overlap with the semi-transmitting film; and the non-mixed area formed at the outer edge of the mixed area and not overlapping with the light-shielding film in the semi-permeable membrane, or (2) When viewed from above, the pattern forming area is formed such that the transmittance gradually decreases from the center of the pattern forming area toward the outer edge, and has a non-mixed area in which the semi-permeable film and the light-blocking film do not exist; And the light-transmitting portion formed at the outer edge of the non-mixed region, which includes the light-transmitting portion where neither the semi-permeable membrane nor the light-shielding membrane exists, and the mixed region where the semi-permeable membrane does not overlap with the non-overlapping region of the light-shielding membrane.

3. A photomask used in the manufacture of a display device to form a desired resist pattern on a transfer substrate, characterized in that, A transparent substrate has multiple patterned regions, each comprising at least two regions with different transmittances and having a defined shape. The pattern forming area has at least a light-transmitting portion and a semi-transparent portion formed by a semi-transparent membrane. In areas where the pattern formation area is not formed, a light-shielding portion is formed on the transparent substrate by laminating the semi-permeable film and the light-shielding film. The area containing a predetermined area at the center of the pattern forming area is designated as the first region, and the area containing a predetermined area at the outer edge of the pattern forming area is designated as the second region. The transmittance in the second region is lower than that in the first region. (1) When viewed from above, the semi-transparent portion is formed at the outer edge of the pattern forming area such that the transmittance gradually decreases from the center of the pattern forming area toward the outer edge; or (2) When the pattern forming area is viewed from above, at least a portion of the semi-transparent portion is formed in a region separated from the outer edge of the pattern forming area; or (3) When viewed from above, the semi-transparent portion is only in contact with a portion of the outer edge of the pattern forming area.

4. The photomask according to any one of claims 1 to 3, wherein, The second region is formed in a concentric circle relative to the first region.

5. The photomask according to any one of claims 1 to 3, wherein, When viewed from above, the pattern-forming area contains arcs on at least a portion of its outer edge shape.

6. The photomask according to any one of claims 1 to 3, wherein, The pattern-forming area is polygonal in shape.

7. The photomask according to claim 1, wherein, When viewed from above, the overlapping area where the semi-permeable membrane and the light-shielding membrane overlap extends radially or swirlingly from the center of the pattern-forming area to the outer edge.

8. The photomask according to claim 1, wherein, When viewed from above, the pattern-forming area has multiple non-overlapping regions on the semi-permeable membrane. These multiple non-overlapping regions do not overlap the light-shielding membrane and have a defined shape. The non-overlapping region is formed such that its area increases as it moves toward the outer edge.

9. The photomask according to claim 1, wherein, When viewed from above, the pattern-forming area is a grid pattern area with alternating rectangular overlapping areas and rectangular non-overlapping areas. The rectangular overlapping areas are formed by the overlap of the semi-permeable film and the light-blocking film. The rectangular non-overlapping areas do not overlap the light-blocking film on the semi-permeable film. Furthermore, areas on the semi-permeable film that do not overlap the light-blocking film are formed on the outer periphery of the grid pattern area.

10. The photomask according to claim 1, wherein, When viewed from above, a light-transmitting portion is formed at the outer edge of the pattern-forming area where neither the light-blocking film nor the semi-transparent film exists.

11. The photomask according to claim 2 or 3, wherein, When viewed from above, the light-transmitting portions of the light-blocking film and the semi-transparent film do not extend radially or swirlingly from the center of the pattern-forming area to the outer edge.

12. The photomask according to claim 2 or 3, wherein, When viewed from above, the pattern-forming area has multiple non-overlapping regions on the semi-permeable membrane that do not overlap with the light-shielding film and have a defined shape. The non-overlapping region is formed such that its area increases as it moves toward the outer edge.

13. The photomask according to claim 2 or 3, wherein, When viewed from above, the pattern-forming area exhibits a grid pattern with alternating light-transmitting portions and rectangular non-overlapping areas. The light-transmitting portions do not contain the light-shielding film or the semi-transparent film, and the rectangular non-overlapping areas do not overlap the light-shielding film on the semi-transparent film. A non-overlapping area is formed on the outer periphery of the grid pattern area, where the light-blocking film does not overlap with the semi-permeable membrane.

14. The photomask according to claim 2 or 3, wherein, When viewed from above, the pattern-forming area has an overlapping region formed by the semi-permeable membrane and the light-shielding membrane at its outer edge.

15. A method for manufacturing a photomask, comprising a region having a semi-transparent region formed by a semi-transparent film on a transparent substrate; A laminated region consisting of at least the semi-permeable film and the light-shielding film stacked on the transparent substrate, with the semi-permeable film positioned further on the transparent substrate than the light-shielding film; and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: The process of preparing a mask blank, wherein the mask blank is formed by at least stacking the semi-permeable film and the light-shielding film on the surface of the transparent substrate such that the semi-permeable film is located on the transparent substrate side further than the light-shielding film; The process of forming a first photoresist pattern involves forming a first photoresist film on the surface of the mask blank, and using a drawing device to draw the first photoresist film to form a first photoresist pattern. The process of removing a portion of the light-shielding film using the first photoresist pattern as a mask; The process of removing the exposed semi-permeable membrane; The process of forming the second photoresist pattern involves forming a second photoresist film on the entire surface of the photomask containing the light-shielding film, and then using a drawing device to draw the second photoresist film to form the second photoresist pattern. as well as The process of removing a portion of the light-shielding film using the second photoresist pattern as a mask. Specifically, when a region comprising a predetermined area in the center of the pattern forming region formed by the light-shielding film and the semi-permeable film is designated as the first region, and a region comprising a predetermined area in the outer periphery of the pattern forming region is designated as the second region, the pattern forming region is formed such that the transmittance in the second region is higher than that in the first region.

16. A method for manufacturing a photomask, comprising: a semi-transparent region formed by a semi-transparent film on a transparent substrate; a stacked region formed by sequentially stacking a light-shielding film and the semi-transparent film on the transparent substrate; and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: The process of preparing a mask blank with a light-shielding film on the surface of a transparent substrate; The process of forming a first photoresist film on the surface of the mask blank; The process of forming a first photoresist pattern by drawing the first photoresist film with a drawing device; The process of removing a portion of the light-shielding film using the first photoresist pattern as a mask; The process of forming the semi-transparent film across the entire surface of the photomask containing the light-shielding film; The process of forming a second photoresist film on the surface of the semi-permeable membrane; The process of forming a second photoresist pattern by drawing the second photoresist film using a drawing apparatus; and The process of removing a portion of the semi-permeable film using the second photoresist pattern as a mask. Specifically, when a region comprising a predetermined area in the center of the pattern forming region formed by the light-shielding film and the semi-permeable film is designated as the first region, and a region comprising a predetermined area in the outer periphery of the pattern forming region is designated as the second region, the pattern forming region is formed such that the transmittance in the second region is higher than that in the first region.

17. A method for manufacturing a photomask, comprising the following regions: a semi-transparent region formed by a semi-transparent film on a transparent substrate; a stacked region on the transparent substrate formed by at least the semi-transparent film and a light-shielding film stacked such that the semi-transparent film is located further on the transparent substrate than the light-shielding film; and a transparent region exposed on the transparent substrate. The manufacturing method includes the following steps: The process of preparing a mask blank, wherein the mask blank is formed by at least stacking the semi-permeable film and the light-shielding film on the surface of the transparent substrate such that the semi-permeable film is located on the transparent substrate side further than the light-shielding film; The process of forming a first photoresist pattern involves forming a first photoresist film on the surface of the mask blank, and using a drawing device to draw the first photoresist film to form a first photoresist pattern. The process of removing a portion of the light-shielding film using the first photoresist pattern as a mask; The process of removing the exposed semi-permeable membrane; The process of forming the second photoresist pattern involves forming a second photoresist film on the entire surface of the photomask containing the light-shielding film, and then using a drawing device to draw the second photoresist film to form the second photoresist pattern. and The process of removing a portion of the semi-permeable film using the second photoresist pattern as a mask. Specifically, when a region comprising a predetermined area of ​​the central portion of the pattern-forming region formed by the light-shielding film and the semi-permeable film is designated as the first region, and a region comprising a predetermined area of ​​the outer periphery of the pattern-forming region is designated as the second region, the pattern-forming region is formed such that the transmittance of the second region is lower than that of the first region. (1) When viewed from above, the semi-transparent region is formed at the outer edge of the pattern forming region such that the transmittance gradually decreases from the center of the pattern forming region toward the outer edge; or (2) When the pattern forming area is viewed from above, at least a portion of the semi-transparent area is formed in an area separated from the outer edge of the pattern forming area; or (3) When viewed from above, the semi-transparent area is only connected to a portion of the outer edge of the pattern forming area.

18. A method for manufacturing a photomask, comprising the following regions: a semi-transparent region formed by a semi-transparent film on a transparent substrate; and a stacked region formed by sequentially stacking a light-shielding film and the semi-transparent film on the transparent substrate. and the transparent area exposed by the transparent substrate, The process of preparing a mask blank with a light-shielding film on the surface of a transparent substrate; The process of forming a first photoresist film on the surface of the mask blank; The process of forming a first photoresist pattern by drawing the first photoresist film with a drawing device; The process of removing a portion of the light-shielding film using the first photoresist pattern as a mask; The process of forming a semi-transparent film on the entire surface of the photomask containing the light-shielding film; The process of forming a second photoresist film on the surface of the semi-permeable membrane; The process of forming a second photoresist pattern by drawing the second photoresist film using a drawing apparatus; and The process of removing a portion of the semi-permeable film using the second photoresist pattern as a mask. Specifically, when a region comprising a predetermined area in the central portion of the pattern-forming region formed by the light-shielding film and the semi-permeable film is designated as the first region, and a region comprising a predetermined area in the outer periphery of the pattern-forming region is designated as the second region, the pattern-forming region is formed such that the transmittance in the second region is lower than that in the first region. and, (1) When viewed from above, the semi-transparent region is formed at the outer edge of the pattern forming region such that the transmittance gradually decreases from the center of the pattern forming region toward the outer edge; or (2) When the pattern forming area is viewed from above, at least a portion of the semi-transparent area is formed in an area separated from the outer edge of the pattern forming area; or (3) When viewed from above, the semi-transparent area is only connected to a portion of the outer edge of the pattern forming area.

19. A method for manufacturing a display device, comprising a resist forming step of forming a desired resist shape on a transfer substrate using a photomask according to any one of claims 1 to 14. The resist forming process includes: The exposure process of exposing the photoresist through the photomask, and The process of forming the desired resist shape by developing the exposed resist.

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