Thin film transistor photosensitive circuit, display panel, and mobile device

Abstract

The present invention provides a thin film transistor photosensitive circuit, a display panel, and a mobile device. This thin film transistor photosensitive circuit includes M×N photosensitive units, M reading buffers, and a control circuit. Each photosensitive unit includes a photosensitive circuit, an energy storage circuit, and a switching circuit. The photosensitive part of the photosensitive circuit is composed of gap type thin film transistors. By controlling the control terminal of the photosensitive circuit, the integration time of the whole photosensitive circuit is controlled. Then, by controlling the switching circuit, the integration results of each photosensitive circuit are read out one by one. Therefore, compared with the existing passive photosensitive components, the integration time of each photosensitive circuit can be consistent, and integration can be carried out simultaneously.

Description

Technical Field

[0001] The present invention relates to a photosensitive circuit. More specifically, the present invention relates to a thin-film transistor photosensitive circuit, a display panel, and a mobile device. Background Art

[0002] Fingerprint recognition technology is a biometric recognition technology. A fingerprint recognition system is a pattern recognition system that includes modules such as fingerprint image acquisition, processing, feature extraction, and comparison. It is commonly used in places where personnel identity confirmation is required, such as access control systems, attendance systems, laptop computers, mobile devices, internal bank processing, and bank payments. Currently, optical fingerprint recognition applied to mobile devices is divided into button type and under-screen type. The button-type fingerprint recognition device is generally configured on the power-on button or HOME button of the mobile device, while the under-screen fingerprint recognition device is generally configured at a specific position under the organic light-emitting diode panel. However, if the user's finger is not in the specific position, the above-mentioned under-screen fingerprint recognition device cannot recognize the fingerprint.

[0003] In addition, the under-screen fingerprint recognition device requires an image capture device. Generally, the image capture device mainly uses a pixel sensor array. The pixel sensor array includes a passive pixel sensor (PPS) and an active pixel sensor (APS). The main difference between the two pixel sensor arrays lies in the circuit of the passive pixel sensor, which is a selection switch composed of a single transistor. Among them, when light excites the electrons of the above transistor, the electrons will be stored in the capacitor, and then the amplifier at the end of each row reads the electrical signal accumulated by the pixels at the intersection of the row and column, and then amplifies this electrical signal. The advantage of the passive pixel sensor is that the circuit is simple and it will not affect the sensitivity of the sensor because it occupies too much photosensitive area. The disadvantage is that the output line impedance of the signal is extremely high, and random noise is easily generated, resulting in poor image quality.

[0004] The circuit of the active pixel sensor is an amplifier formed by coupling a transistor to each pixel. In addition, the design of the active pixel sensor solves the problem of random noise easily generated by the passive pixel sensor; however, since the amplifier circuit occupies too much photosensitive area of the pixel, the number of pixels that can be placed per unit area of the sensor is reduced, and the resolution is also reduced. In addition, it is not easy to make the characteristics of the amplifiers on the pixels consistent. As a result, the voltage of some pixels is amplified more, and the voltage of some pixels is amplified less. After the manufacturing process is completed, these amplifier characteristics cannot be changed. Therefore, so-called fixed pattern noise will be generated, and the captured image is like the scene seen through a dirty window. Therefore, most of the sensors used in current products are still mainly passive pixel sensors.

[0005] The exposure integration time of a traditional passive pixel sensor is set between two frame scan times. Therefore, the length of the integration time is affected by the number of scan lines of the panel in the array. In the case of a passive pixel sensor with a high resolution, the exposure time is often very short. However, when making an optical fingerprint recognition function on a flat display panel (such as a liquid crystal display panel, an organic light-emitting diode display panel, etc.), due to material factors, the exposure time needs to be longer, and it is often insufficient to complete the integration, resulting in a blurred image. Summary of the Invention

[0006] An object of the present invention is to provide a thin-film transistor photosensitive circuit, a display panel, and a mobile device, so as to achieve fast image capture when the photosensitive speed of the thin-film transistor is low, and it is suitable for optical fingerprint recognition on the panel.

[0007] In view of this, the present invention provides a thin-film transistor photosensitive circuit. This thin-film transistor photosensitive circuit includes M×N photosensitive units, M reading buffers, and a control circuit. Each photosensitive unit includes a photosensitive circuit, an energy storage circuit, and a switching circuit. The photosensitive part of the photosensitive circuit is composed of an inter-gate thin-film transistor. This photosensitive circuit includes a control terminal, a first terminal, and a second terminal. Among them, the first terminal of the photosensitive circuit is coupled to a first power supply terminal. The energy storage circuit is coupled to the second terminal of the photosensitive circuit. The switching circuit includes a first terminal, a second terminal, and a control terminal. Among them, the first terminal of the switching circuit is coupled to the second terminal of the photosensitive circuit. Each reading buffer includes an input terminal and an output terminal. The input terminal of the Kth reading buffer is coupled to the second terminals of the N switching circuits in the Kth column.

[0008] The control circuit is coupled to the control terminal of the photosensitive circuit of the above-mentioned photosensitive unit and the control terminal of the switching circuit of the above-mentioned photosensitive unit. Among them, the control circuit controls the control terminal of the photosensitive circuit of the above-mentioned photosensitive unit to control the integration time of each photosensitive unit, and the control circuit controls the control terminal of the switching circuit of the above-mentioned photosensitive unit to control the photosensitive signal output from the photosensitive unit to the M reading buffers.

[0009] The present invention further provides a display panel, which includes a thin-film transistor photosensitive circuit. The thin-film transistor photosensitive circuit includes M×N photosensitive units, M reading buffers, and a control circuit. Each photosensitive unit includes a photosensitive circuit, an energy storage circuit, and a switching circuit. The photosensitive part of the photosensitive circuit is composed of gap-type thin-film transistors. The photosensitive circuit includes a control terminal, a first terminal, and a second terminal. Among them, the first terminal of the photosensitive circuit is coupled to a first power supply terminal. The energy storage circuit is coupled to the second terminal of the photosensitive circuit. The switching circuit includes a first terminal, a second terminal, and a control terminal. Among them, the first terminal of the switching circuit is coupled to the second terminal of the photosensitive circuit. Each reading buffer includes an input terminal and an output terminal. The input terminal of the Kth reading buffer is coupled to the second terminals of the N switching circuits in the Kth column.

[0010] The control circuit is coupled to the control terminals of the photosensitive circuits of the above-mentioned photosensitive units and the control terminals of the switching circuits of the above-mentioned photosensitive units. Among them, the control circuit controls the control terminals of the photosensitive circuits of the above-mentioned photosensitive units to control the integration time of each photosensitive unit, and the control circuit controls the control terminals of the switching circuits of the above-mentioned photosensitive units to control the photosensitive signals output by the photosensitive units to the M reading buffers.

[0011] The present invention further provides a mobile device, which includes a display panel. The display panel includes a thin-film transistor photosensitive circuit. The thin-film transistor photosensitive circuit includes M×N photosensitive units, M reading buffers, and a control circuit. Each photosensitive unit includes a photosensitive circuit, an energy storage circuit, and a switching circuit. The photosensitive part of the photosensitive circuit is composed of gap-type thin-film transistors. The photosensitive circuit includes a control terminal, a first terminal, and a second terminal. Among them, the first terminal of the photosensitive circuit is coupled to a first power supply terminal. The energy storage circuit is coupled to the second terminal of the photosensitive circuit. The switching circuit includes a first terminal, a second terminal, and a control terminal. Among them, the first terminal of the switching circuit is coupled to the second terminal of the photosensitive circuit. Each reading buffer includes an input terminal and an output terminal. The input terminal of the Kth reading buffer is coupled to the second terminals of the N switching circuits in the Kth column.

[0012] The control circuit is coupled to the control terminals of the photosensitive circuits of the above-mentioned photosensitive units and the control terminals of the switching circuits of the above-mentioned photosensitive units. Among them, the control circuit controls the control terminals of the photosensitive circuits of the above-mentioned photosensitive units to control the integration time of each photosensitive unit, and the control circuit controls the control terminals of the switching circuits of the above-mentioned photosensitive units to control the photosensitive signals output by the photosensitive units to the M reading buffers.

[0013] A thin-film transistor photosensitive circuit, a display panel, and a mobile device according to a preferred embodiment of the present invention. The photosensitive circuit includes a gap-type thin-film transistor, and the gap-type thin-film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the gap-type thin-film transistor is coupled to the control terminal of the photosensitive circuit, the first source-drain electrode of the gap-type thin-film transistor is coupled to the first terminal of the photosensitive circuit, and the second source-drain electrode of the gap-type thin-film transistor is coupled to the second terminal of the photosensitive circuit. At least one of the first source-drain electrode and the second source-drain electrode does not cover the gate.

[0014] A thin-film transistor photosensitive circuit, a display panel, and a mobile device according to a preferred embodiment of the present invention. The energy storage circuit includes a capacitor having a first terminal and a second terminal. Among them, the first terminal of the capacitor is coupled to the second source-drain electrode of the gap-type thin-film transistor, and the second terminal of the capacitor is coupled to a second power supply terminal.

[0015] A thin-film transistor photosensitive circuit, a display panel, and a mobile device according to a preferred embodiment of the present invention. The switching circuit includes a thin-film transistor, and the thin-film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the thin-film transistor is coupled to the control terminal of the switching circuit, the first source-drain electrode of the thin-film transistor is coupled to the first terminal of the switching circuit, and the second source-drain electrode of the thin-film transistor is coupled to the second terminal of the switching circuit.

[0016] A thin-film transistor photosensitive circuit, a display panel, and a mobile device according to a preferred embodiment of the present invention. The photosensitive circuit includes a gap-type thin-film transistor and a thin-film transistor. The gap-type thin-film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the gap-type thin-film transistor and the first source-drain electrode of the gap-type thin-film transistor are coupled to the first terminal of the photosensitive circuit. The thin-film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the thin-film transistor is coupled to the control terminal of the photosensitive circuit, the first source-drain electrode of the thin-film transistor is coupled to the second source-drain electrode of the gap-type thin-film transistor, and the second source-drain electrode of the thin-film transistor is coupled to the second terminal of the photosensitive circuit. The gap between the first source-drain electrode and the second source-drain electrode of the gap-type thin-film transistor is greater than the gap between the first source-drain electrode and the second source-drain electrode of the thin-film transistor.

[0017] A thin-film transistor photosensitive circuit, a display panel, and a mobile device according to a preferred embodiment of the present invention. The energy storage circuit includes a capacitor having a first terminal and a second terminal. Among them, the first terminal of the capacitor is coupled to the second source-drain electrode of the thin-film transistor, and the second terminal of the capacitor is coupled to the second terminal of the switching circuit.

[0018] According to the thin film transistor photosensitive circuit, display panel, and mobile device of a preferred embodiment of the present invention, the control circuit includes an integration control pin, and the integration control pin is coupled to the control end of the photosensitive circuit of the M×N photosensitive units to enable and turn off each photosensitive unit simultaneously.

[0019] The spirit of the present invention lies in controlling the integration time of the overall photosensitive circuit by controlling the control end of the photosensitive circuit. After that, by controlling the switch circuit, the integration results of each photosensitive circuit are read out one by one. Therefore, compared with the existing passive photosensitive components, the integration time of each photosensitive circuit can be consistent and the integration can be performed simultaneously.

[0020] To make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following specifically enumerates preferred embodiments and, in conjunction with the accompanying drawings, makes a detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of a mobile device according to a preferred embodiment of the present invention.

[0022] Figure 2 It is a circuit block diagram of a liquid crystal display panel with an optical reading function according to a preferred embodiment of the present invention.

[0023] Figure 3 It is a schematic structural diagram of a gap-type thin film transistor according to a preferred embodiment of the present invention.

[0024] Figure 4 It is a circuit diagram of a thin film transistor photosensitive circuit according to a preferred embodiment of the present invention.

[0025] Figure 5 It is a circuit diagram of a thin film transistor photosensitive circuit according to a preferred embodiment of the present invention.

[0026] SYMBOL DESCRIPTION:

[0027] 100: Liquid crystal display panel with an optical reading function

[0028] 201: Photosensitive unit

[0029] 202: Reading buffer

[0030] 203: Control circuit

[0031] 301: Gate metal

[0032] 302: Gate oxide layer

[0033] 303: Channel

[0034] 304: Doped amorphous silicon

[0035] 305: Source-drain metal

[0036] 40, 50: Photosensitive unit

[0037] 41, 51: Read buffer

[0038] 42, 52: Control circuit

[0039] MG: Gap-type thin-film transistor

[0040] M1, M2: Thin-film transistor

[0041] 401, 501: Photosensitive circuit

[0042] 402, 502: Energy storage circuit

[0043] 403, 503: Switching circuit

[0044] INT: Integral control pin

[0045] Sel_1, Sel_2, Sel_M: Selection signal

[0046] DAT_1, DAT_2, DAT_M: Data Detailed implementation manner

[0047] Figure 1 It is a schematic diagram of a mobile device according to a preferred embodiment of the present invention. Please refer to Figure 1 , this mobile device includes a liquid crystal display panel 100 with an optical reading function. Generally speaking, the most common application of the optical reading function on the panel is fingerprint recognition, and fingerprint recognition will be used as an example hereinafter. Figure 2 It is a circuit block diagram of a liquid crystal display panel with an optical reading function according to a preferred embodiment of the present invention. Please refer to Figure 2 , this liquid crystal display panel with an optical reading function includes M×N photosensitive units 201, M read buffers 202 and a control circuit 203.

[0048] The photosensitive units 201 are arranged on the liquid crystal display panel and are composed of thin-film transistors and gap-type thin-film transistors. Among them, the structure of the gap-type thin-film transistor is generally as Figure 3 shown, which is a schematic structural diagram of a gap-type thin-film transistor according to a preferred embodiment of the present invention. Please refer to Figure 3 , 301 is the gate metal; 302 is the gate oxide layer; 303 is the channel, which is generally made of amorphous silicon semiconductor material, but not limited thereto; 304 is doped amorphous silicon; 305 is the source-drain metal. From Figure 3It can be seen that the above-mentioned gap-type thin-film transistor has an asymmetric structure and exposes a very large part of the thin-film transistor channel to receive light. That is to say, compared with the traditional thin-film electrode body, the source and drain electrodes of the gap thin-film transistor in this embodiment are spaced apart by a gap to expose a very large part of the channel 303 and the underlying gate 301. Thereby, the gap-type thin-film transistor can have different conduction states according to the different received light. If a energy storage component is coupled thereto later, charges can be accumulated, and then the brightness of the received light can be judged according to the different charge accumulations. While the thin-film transistors in the general prior art have a symmetric structure and a smaller exposed channel. In other words, in order to expose most of the channel 303 and the underlying gate 301, one of the two source and drain electrodes 305 of the gap thin-film transistor can be set not to cover the gate 301, as Figure 3 shown, only one side of the source and drain electrode 305 covers the gate 301.

[0049] Figure 4 is shown as the circuit diagram of the thin-film transistor photosensitive circuit of a preferred embodiment of the present invention. Please refer to Figure 4 . In this embodiment, for the convenience of explaining the spirit of the present invention, only a 2×2 photosensitive unit is shown. However, those of ordinary skill in the art should know that the number and configuration of the photosensitive units can be extended according to different designs. Therefore, the present invention is not limited thereto. This thin-film transistor photosensitive circuit includes a plurality of photosensitive units 40, a plurality of reading buffers 41, and a control circuit 42. Each photosensitive unit 40 includes a photosensitive circuit 401, an energy storage circuit 402, and a switching circuit 403. The photosensitive circuit 401 is, for example, constituted by a single gap-type thin-film transistor MG, and is represented by half of the gate electrode in the Figure 4 drawing. The energy storage circuit 402 is implemented by a capacitor. The switching circuit 403 is implemented by an ordinary thin-film transistor M2. It is worth mentioning that the gap between the source and drain electrodes of the gap thin-film transistor 401 can be larger than the gap between the source and drain electrodes of the ordinary thin-film transistor 403 to expose most of the channel and the underlying gate.

[0050] From the above Figure 4As can be seen from the embodiments, the control circuit 42 controls all the photosensitive circuits 401 using only one integral control pin INT. Therefore, the control circuit 42 can control the integration time of the photosensitive unit 40 through only one integral control pin INT. When integrating, the photosensitive circuit 401 determines the conduction degree of the photosensitive circuit 401 according to the irradiated light, and the power supply voltage VDD charges (integrates) the energy storage circuit 402 through the photosensitive circuit 401. When the integration time ends, the control circuit 42 controls each photosensitive circuit 401 through the integral control pin INT to turn off each photosensitive circuit 401 so that current cannot pass through. After that, as long as the control circuit 42 sequentially controls the selection signals Sel_1 and Sel_2 to control the switching circuit 403, the energy stored in the energy storage circuit 402 can be read out as data dAT_1 through the read buffer 41. Then the control circuit 42 can capture the electrical signal of the image.

[0051] As can be seen from the above embodiments, in the prior art, whether it is a passive pixel sensor or an active pixel sensor, it is necessary to control its integration time and reset time and sequentially read out the electrical signal after integration. Due to the prior art, the integration time is the time between after a frame reset and the readout stage of transferring current or charge, and the length of the integration time will thus be limited by the time length allocated by the number of scan lines. Therefore, in the prior art, if the photocurrent of the sensing component is too large, resulting in an overly long integration time and obtaining charges or currents beyond the range, it will cause the fingerprint recognition image to be distorted and generate data that cannot be used by the backend circuit. Or, in the prior art, if the light response time (rising time and falling time) of the sensing component is too long, resulting in insufficient integration time, it will also cause problems with normal operation.

[0052] Since this case adopts so-called Global Integration, the integration time of each pixel can be controlled at the same time. Therefore, it is possible to avoid image distortion caused by integration saturation and prevent the problem of insufficient integration time. In addition, the pixel sensors in the prior art continuously integrate and read. However, because the photosensitive circuit 401 in the embodiments of the present invention is controlled by a gate, all the photosensitive circuits 401 can be selected to be turned on at an appropriate time so that all columns can be uniformly controlled. When photosensing is not required, all the photosensitive circuits 401 can be controlled to stop integrating.

[0053] Figure 5 It is a circuit diagram of a thin-film transistor photosensitive circuit according to a preferred embodiment of the present invention. Please refer to Figure 5, in this embodiment, similarly, for the convenience of explaining the spirit of the present invention, only a 2×2 photosensitive unit is shown. However, those of ordinary skill in the art should know that the photosensitive unit can be extended according to different designs, so the present invention is not limited thereto. This thin-film transistor photosensitive circuit includes a plurality of photosensitive units 50, a plurality of read buffers 51, and a control circuit 52. Each photosensitive unit 50 includes a photosensitive circuit 501, an energy storage circuit 502, and a switch circuit 503. Please refer to Figure 4 and Figure 5 as well. In this embodiment, the photosensitive circuit 501 is composed of a gap-type thin-film transistor MG and a thin-film transistor M1. Figure 5 The gap-type thin-film transistor MG in

[0054] is also represented by half of the gate electrode for the distinction from ordinary thin-film transistors. The energy storage circuit 502 is implemented by a capacitor. The switch circuit 503 is implemented by an ordinary thin-film transistor M2. Figure 5 And Figure 4 the difference from the embodiment of

[0055] The reason for adopting the so-called global integration in the embodiments of the present invention is that for general thin film transistors (whether they are thin film transistors of liquid crystal display panels or organic light emitting diode display panels), when they are used as photosensitive components, the integration speed takes much longer than that of general photosensitive components. Therefore, if the conventional scanning line integration method is adopted, the integration time will be seriously insufficient, resulting in unclear images read by the lock. For optical fingerprint recognition, image clarity is a very decisive key factor. Due to the control method of the present invention, all photosensitive components can perform integration simultaneously. In this way, the integration time increases from the time of one line in the prior art to the time of the entire frame, which can increase the integration time by hundreds or thousands of times compared with the prior art, which is very beneficial for image clarity. The range that the designer can adjust will also increase a lot, and the yield will also increase accordingly.

[0056] In addition, since the present case adopts the thin film transistor process, the scope of application of the present case is quite wide. For example, fingerprint recognition on mobile phone panels, televisions, fingerprint recognition on smart watches, etc. As long as the thin film transistor process is applied, the technology of the present invention can be adopted. In the above embodiments, the display panel is exemplified by a liquid crystal display panel. However, those with ordinary knowledge in the art should be able to infer that the present invention can also be applied to organic light emitting diode display panels or other types of display panels. Therefore, the present invention is not limited thereto.

[0057] In summary, the spirit of the present invention is that before capturing the fingerprint image, the fingerprint image capture circuit first obtains the polar states of the currently driven pixels of each pixel. Thereby, when the fingerprint is captured, the backend image processing can be performed on the interference caused by the polarity, so as to greatly improve the fingerprint recognition rate.

[0058] The specific embodiments proposed in the detailed description of the preferred embodiments are only used to conveniently illustrate the technical content of the present invention, rather than narrowly limiting the present invention to the above embodiments. Without departing from the spirit of the present invention and the following claims, various changes and implementations belong to the scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended claims.

Claims

1. A thin-film transistor photosensitive circuit, characterized in that, the thin-film transistor photosensitive circuit includes: M×N photosensitive units, each of the photosensitive units includes: a photosensitive circuit, including a control terminal, a first terminal and a second terminal, wherein, the first terminal of the photosensitive circuit is coupled to a first power supply terminal, and the photosensitive part of the photosensitive circuit is constituted by a gap-type thin-film transistor; a energy storage circuit, coupled to the second terminal of the photosensitive circuit; and a switching circuit, including a first terminal, a second terminal and a control terminal, wherein, the first terminal of the switching circuit is coupled to the second terminal of the photosensitive circuit; M reading buffers, each of the reading buffers includes an input terminal and an output terminal, the input terminal of the Kth reading buffer is coupled to the second terminals of the N switching circuits in the Kth column; a control circuit, coupled to the control terminal of the photosensitive circuit and the control terminal of the switching circuit in the photosensitive unit, wherein, the control circuit controls the control terminal of the photosensitive circuit in the photosensitive unit to control the integration time of each photosensitive unit, and the control circuit controls the control terminal of the switching circuit in the photosensitive unit to control the photosensitive signal output from the photosensitive unit to the M reading buffers.

2. The thin-film transistor photosensitive circuit according to claim 1, characterized in that, the control circuit includes an integration control pin, and the integration control pin is coupled to the control terminal of the photosensitive circuit in the photosensitive unit to simultaneously enable and disable each photosensitive unit.

3. The thin-film transistor photosensitive circuit according to claim 1, characterized in that, the gap-type thin-film transistor in the photosensitive circuit includes a gate, a first source-drain electrode and a second source-drain electrode, wherein, the gate of the gap-type thin-film transistor is coupled to the control terminal of the photosensitive circuit, the first source-drain electrode of the gap-type thin-film transistor is coupled to the first terminal of the photosensitive circuit, the second source-drain electrode of the gap-type thin-film transistor is coupled to the second terminal of the photosensitive circuit, and at least one of the first source-drain electrode and the second source-drain electrode does not cover the gate.

4. The thin-film transistor photosensitive circuit according to claim 3, characterized in that, the energy storage circuit includes: a capacitor, including a first terminal and a second terminal, wherein, the first terminal of the capacitor is coupled to the second source-drain electrode of the gap-type thin-film transistor, and the second terminal of the capacitor is coupled to a second power supply terminal.

5. The thin-film transistor photosensitive circuit according to claim 1, characterized in that, the switching circuit includes: a thin-film transistor, including a gate, a first source-drain electrode and a second source-drain electrode, wherein, the gate of the thin-film transistor is coupled to the control terminal of the switching circuit, the first source-drain electrode of the thin-film transistor is coupled to the first terminal of the switching circuit, and the second source-drain electrode of the thin-film transistor is coupled to the second terminal of the switching circuit.

6. The thin-film transistor photosensitive circuit according to claim 1, characterized in that, the photosensitive circuit includes: the gap-type thin-film transistor, including a gate, a first source-drain electrode and a second source-drain electrode, wherein, the gate of the gap-type thin-film transistor and the first source-drain electrode of the gap-type thin-film transistor are coupled to the first terminal of the photosensitive circuit; and A thin film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the thin film transistor is coupled to the control terminal of the photosensitive circuit, the first source-drain electrode of the thin film transistor is coupled to the second source-drain electrode of the gap-type thin film transistor, and the second source-drain electrode of the thin film transistor is coupled to the second terminal of the photosensitive circuit; Among them, the gap between the first source-drain electrode and the second source-drain electrode of the gap-type thin film transistor is greater than the gap between the first source-drain electrode and the second source-drain electrode of the thin film transistor.

7. The thin film transistor photosensitive circuit according to claim 6, characterized in that, The energy storage circuit includes: A capacitor includes a first terminal and a second terminal. Among them, the first terminal of the capacitor is coupled to the second source-drain electrode of the thin film transistor, and the second terminal of the capacitor is coupled to the second terminal of the switch circuit.

8. A display panel, characterized in that, including: A thin film transistor photosensitive circuit includes: M×N photosensitive units, and each of the photosensitive units includes: A photosensitive circuit includes a control terminal, a first terminal, and a second terminal. Among them, the first terminal of the photosensitive circuit is coupled to a first power supply terminal; An energy storage circuit is coupled to the second terminal of the photosensitive circuit; and A switch circuit includes a first terminal, a second terminal, and a control terminal. Among them, the first terminal of the switch circuit is coupled to the second terminal of the photosensitive circuit; M reading buffers, and each of the reading buffers includes an input terminal and an output terminal. The input terminal of the Kth reading buffer is coupled to the second terminals of the N switch circuits in the Kth column; A control circuit is coupled to the control terminal of the photosensitive circuit and the control terminal of the switch circuit in the photosensitive unit. Among them, the control circuit controls the control terminal of the photosensitive circuit in the photosensitive unit to control the integration time of each photosensitive unit, and the control circuit controls the control terminal of the switch circuit in the photosensitive unit to control the photosensitive signal output by the photosensitive unit to the M reading buffers.

9. The display panel according to claim 8, characterized in that, The control circuit includes an integration control pin, and the integration control pin is coupled to the control terminal of the photosensitive circuit in the photosensitive unit to enable and disable each photosensitive unit simultaneously.

10. The display panel according to claim 8, characterized in that, The photosensitive circuit includes: A gap-type thin film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the gap-type thin film transistor is coupled to the control terminal of the photosensitive circuit, the first source-drain electrode of the gap-type thin film transistor is coupled to the first terminal of the photosensitive circuit, and the second source-drain electrode of the gap-type thin film transistor is coupled to the second terminal of the photosensitive circuit. At least one of the first source-drain electrode and the second source-drain electrode does not cover the gate.

11. The display panel according to claim 10, characterized in that, The energy storage circuit includes: A capacitor includes a first terminal and a second terminal. Among them, the first terminal of the capacitor is coupled to the second source-drain electrode of the gap-type thin film transistor, and the second terminal of the capacitor is coupled to a second power supply terminal.

12. The display panel according to claim 8, characterized in that, The switch circuit includes: A thin film transistor includes a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the thin film transistor is coupled to the control terminal of the switching circuit, the first source-drain electrode of the thin film transistor is coupled to the first terminal of the switching circuit, and the second source-drain electrode of the thin film transistor is coupled to the second terminal of the switching circuit.

13. The display panel according to claim 8, characterized in that, the photosensitive circuit includes: a gap-type thin film transistor including a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the gap-type thin film transistor and the first source-drain electrode of the gap-type thin film transistor are coupled to the first terminal of the photosensitive circuit; and a thin film transistor including a gate, a first source-drain electrode, and a second source-drain electrode. Among them, the gate of the thin film transistor is coupled to the control terminal of the photosensitive circuit, the first source-drain electrode of the thin film transistor is coupled to the second source-drain electrode of the gap-type thin film transistor, and the second source-drain electrode of the thin film transistor is coupled to the second terminal of the photosensitive circuit; wherein, the gap between the first source-drain electrode and the second source-drain electrode of the gap-type thin film transistor is greater than the gap between the first source-drain electrode and the second source-drain electrode of the thin film transistor.

14. The display panel according to claim 13, characterized in that, the energy storage circuit includes: a capacitor including a first terminal and a second terminal. Among them, the first terminal of the capacitor is coupled to the second source-drain electrode of the thin film transistor, and the second terminal of the capacitor is coupled to the second terminal of the switching circuit.

15. A mobile device, characterized in that, it includes the display panel according to any one of claims 8-14.

Images