A method for manufacturing a display panel, a display panel and a display device

Abstract

The present invention discloses a method for preparing a display panel, a display panel and a display device. The preparation method comprises: providing a driving backplane, the driving backplane comprises an anode layer, the anode layer comprises a plurality of anodes arranged in an array; forming a light-emitting functional layer on the side of the driving backplane where the anode layer is arranged; forming a cathode layer, a dielectric layer and a metal layer on the side of the light-emitting functional layer away from the driving backplane; wherein a groove is arranged at a position of the cathode layer corresponding to the anode; the dielectric layer is located in the groove on the side of the cathode layer away from the light-emitting functional layer and protrudes out of the groove, the metal layer is located on the side of the dielectric layer away from the cathode layer, and the metal layer and the cathode layer form an FP cavity. The technical solution of the embodiment of the present invention prepares a display panel by depositing a plurality of FP cavities of different thicknesses, so that the silicon-based OLED display panel can emit light of different colors and realize colorization.

Description

Technical Field

[0001] The embodiments of the present invention relate to a flat panel display technology, and more particularly to a method for manufacturing a display panel, a display panel and a display device. Background Art

[0002] With the development of display technology, silicon-based OLED display devices have great development advantages over traditional display devices. Silicon-based OLED display devices not only have the characteristics of self-luminescence and fast response speed, but also have the characteristics of small size, light weight and low power consumption. They are the core components of near-eye display systems.

[0003] In the existing technology, the colorization of silicon-based OLED microdisplays mostly relies on low-temperature filter technology, but the yellow light process is difficult to ensure conditions below 100°C, and the filter material also has the problem of poor curing and easy falling off.

[0004] Based on this, providing an improved colorization process that does not rely on low-temperature processes to prepare silicon-based OLED microdisplays has become an urgent problem to be solved in the industry. Summary of the invention

[0005] The present invention provides a method for preparing a display panel, a display panel and a display device, so as to realize the colorization of an OLED micro display.

[0006] In a first aspect, an embodiment of the present invention provides a method for manufacturing a display panel, the method comprising:

[0007] Providing a driving back plate, the driving back plate includes an anode layer, and the anode layer includes a plurality of anodes arranged in an array;

[0008] Forming a light-emitting functional layer on a side of the driving backplane where the anode layer is arranged;

[0009] A cathode layer, a dielectric layer and a metal layer are formed on the side of the light-emitting functional layer away from the driving backplane; wherein a groove is provided at the position of the cathode layer corresponding to the anode; the dielectric layer is located in the groove on the side of the cathode layer away from the light-emitting functional layer and protrudes out of the groove, and the metal layer is located on the side of the dielectric layer away from the cathode layer, and the metal layer and the cathode layer form an FP cavity.

[0010] Optionally, a cathode layer, a dielectric layer and a metal layer are formed on a side of the light-emitting functional layer away from the driving backplane, including:

[0011] forming a cathode layer on a side of the light-emitting functional layer away from the driving backplane;

[0012] forming a photoresist layer on the cathode layer;

[0013] etching the photoresist layer to form an opening on the photoresist layer to expose the cathode layer;

[0014] forming a dielectric layer at the opening positions of the photoresist layer and the cathode layer;

[0015] removing the photoresist layer and the dielectric layer on the photoresist;

[0016] A metal layer is formed on the dielectric layer and the cathode layer.

[0017] Optionally, the dielectric layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer having different thicknesses;

[0018] A cathode layer, a dielectric layer and a metal layer are formed on a side of the light-emitting functional layer away from the driving backplane, including:

[0019] forming a first metal layer on the light-emitting functional layer;

[0020] forming a first photoresist layer on the metal layer;

[0021] Etching the first photoresist layer to form an opening on the first photoresist layer to expose a portion of the first metal layer;

[0022] forming a first dielectric layer on the first photoresist layer;

[0023] removing the first photoresist layer;

[0024] forming a second photoresist layer on the first metal layer;

[0025] Etching the second photoresist layer to form an opening on the second photoresist layer to expose a portion of the first metal layer;

[0026] forming a second dielectric layer on the second photoresist layer;

[0027] removing the second photoresist layer;

[0028] forming a third photoresist layer on the first metal layer;

[0029] Etching the third photoresist layer to form an opening on the third photoresist layer to expose a portion of the first metal layer;

[0030] forming a third dielectric layer on the third photoresist layer;

[0031] removing the third photoresist layer;

[0032] A metal material is sputtered or deposited on the first dielectric layer, the second dielectric layer, the third dielectric layer and the cathode layer to form a groove and a second metal layer.

[0033] Optionally, the photoresist layer is removed by a dry lift-off process.

[0034] Optionally, after forming the cathode layer, the method further includes: forming a first metal adhesion layer on the cathode layer;

[0035] Before forming the metal layer, the method further includes: forming a second metal adhesion layer on the dielectric layer.

[0036] In a second aspect, an embodiment of the present invention further provides a display panel, the display panel comprising:

[0037] A driving back plate, the driving back plate includes an anode layer, and the anode layer includes a plurality of anodes arranged in an array;

[0038] A light-emitting functional layer, wherein the light-emitting functional layer and the anode layer are located on the same side, and the light-emitting functional layer covers the anode layer;

[0039] The cathode layer is located on the side of the light-emitting functional layer away from the driving backplane, and a groove is provided at a position of the cathode layer corresponding to the anode;

[0040] A dielectric layer, the dielectric layer is disposed in the groove of the cathode and protrudes out of the groove;

[0041] The metal layer is arranged on a side of the dielectric layer away from the cathode layer, and the metal layer and the cathode layer form a FP cavity.

[0042] Optionally, the material of the metal layer is the same as that of the cathode layer.

[0043] Optionally, the display panel further includes a packaging layer covering the metal layer and the cathode layer;

[0044] The material of the dielectric layer includes SiO2.

[0045] Optionally, the dielectric layer includes a first dielectric layer, a second dielectric layer, and a third dielectric layer corresponding to different luminescent colors respectively; the thicknesses of the first dielectric layer, the second dielectric layer, and the third dielectric layer are all different.

[0046] In a third aspect, an embodiment of the present invention further provides a display device, comprising the display panel of the second aspect.

[0047] The technical solution of the embodiment of the present invention is to sputter an anode layer on the side of the driving backplane away from the driving backplane, and the anode layer is composed of a plurality of anodes arranged in an array, and a light-emitting functional layer is sputtered on the side of the anode layer away from the driving backplane. A cathode layer, a dielectric layer and a metal layer are sequentially sputtered on the side of the light-emitting functional layer away from the driving backplane, and a groove is provided at the position of the cathode layer corresponding to the anode to form an FP cavity filter layer based on the optical resonance principle. The display panel prepared by the preparation method no longer relies on the low-temperature filter process to achieve colorization, but realizes the colorization of the silicon-based OLED microdisplay through multiple reflections and interference filtering of the FP cavity. In the prior art, the colorization of silicon-based OLED display devices mostly relies on the low-temperature filter process. The formation of the low-temperature filter requires the use of a yellow light process, but the yellow light process is difficult to ensure the condition below 100°C, and the process difficulty is relatively large. The present application can reduce the process difficulty. In addition, the material of the existing filter also has the problem of poor solidification and easy to fall off. The FP cavity film layer formed by sputtering in the present application is not easy to fall off, so that the silicon-based OLED microdisplay has higher reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 is a flow chart of a method for preparing a display panel provided by an embodiment of the present invention;

[0049] Figure 2 In the embodiment of the present invention Figure 1 The structure diagram corresponding to step S110 of the method for manufacturing a display panel shown;

[0050] Figure 3 In the embodiment of the present invention Figure 1 The structure diagram corresponding to step S120 of the method for manufacturing a display panel shown;

[0051] Figure 4 In the embodiment of the present invention Figure 1 The structure diagram corresponding to step S130 of the method for manufacturing a display panel shown;

[0052] Figure 5 is a flow chart of another method for preparing a display panel provided by an embodiment of the present invention;

[0053] Figure 6 is a flow chart of a method for forming an FP cavity in another method for manufacturing a display panel provided by an embodiment of the present invention;

[0054] Figure 7 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S301 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0055] Figure 8 In the embodiment of the present invention Figure 6The structural diagram corresponding to step S302 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0056] Fig. 9 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S303 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0057] Fig.10 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S304 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0058] Fig.11 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S305 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0059] Fig.12 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S306 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0060] Fig.13 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S307 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0061] Fig.14 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S308 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0062] Fig.15 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S309 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0063] Fig.16 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S310 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0064] Fig.17 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S311 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0065] Fig.18 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S312 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0066] Fig.19 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S313 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0067] Fig. 20 In the embodiment of the present invention Figure 6 The structural diagram corresponding to step S314 of the method for forming the FP cavity in the method for manufacturing the display panel shown;

[0068] Fig.21 is a structural diagram of a display panel provided by an embodiment of the present invention;

[0069] Fig. 22 It is a schematic diagram of a display device using a silicon-based OLED display panel provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0070] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0071] An embodiment of the present invention provides a method for manufacturing a display panel. Figure 1 The present invention provides a flowchart of a method for preparing a display panel according to an embodiment of the present invention. The method is suitable for preparing a color silicon-based OLED display panel. The method for preparing the display panel specifically comprises the following steps:

[0072] S110, providing a driving backplane, wherein the driving backplane includes an anode layer, and the anode layer includes a plurality of anodes arranged in an array.

[0073] Specifically, Figure 2 In the embodiment of the present invention Figure 1 The structure diagram corresponding to step S110 of the method for preparing the display panel shown. The driving backplane 10 can be an α-Si backplane for carrying an organic light-emitting material, and the driving backplane 10 has a driving circuit inside to drive the organic light-emitting material to emit light. The driving backplane 10 has an anode layer 20, which is composed of an array of multiple anodes, and the anodes are connected to the driving backplane 10 through vias 30, so that the anodes are conductive to the driving backplane 10.

[0074] S120, forming a light-emitting functional layer on a side of the driving backplane where the anode layer is arranged.

[0075] Specifically, Figure 3 In the embodiment of the present invention Figure 1The structure diagram corresponding to step S120 of the method for preparing the display panel shown. The light-emitting functional layer 40 can be an OLED light-emitting material, for example, it can include a hole transport layer, a hole injection layer, a white light-emitting layer, an electron injection layer, an electron transport layer, etc. composed of organic materials. The light-emitting functional layer 40 can be formed by evaporating a certain thickness of an organic light-emitting material film on a driving backplane having a plurality of anodes arranged in an array through an evaporation process.

[0076] S130, forming a cathode layer, a dielectric layer and a metal layer on the side of the light-emitting functional layer away from the driving backplane; wherein a groove is provided at the position of the cathode layer corresponding to the anode; the dielectric layer is located in the groove on the side of the cathode layer away from the light-emitting functional layer and protrudes out of the groove, and the metal layer is located on the side of the dielectric layer away from the cathode layer, and the metal layer and the cathode layer form an FP cavity.

[0077] Specifically, Figure 4 In the embodiment of the present invention Figure 1The structure diagram corresponding to step S130 of the method for preparing the display panel shown. The cathode layer 50, the dielectric layer 60 and the metal layer 70 formed on the side of the light-emitting functional layer 40 away from the driving backplane 10 constitute the FP cavity. The FP cavity can modulate and filter the incident light based on the principle of optical resonance, and has the advantages of narrow bandwidth, wide adjustable range and high fineness. The FP cavity is composed of two parallel reflective layers and an intermediate spacing layer. In this embodiment, the cathode layer 50 and the metal layer 70 are reflective layers, and the dielectric layer 60 is the intermediate spacing layer. The working principle of the FP cavity is: after the light is incident into the FP cavity, it is reflected back and forth between the two reflective layers for many times, causing a phase difference between the light beams, thereby forming an interference light beam. By changing the thickness of the intermediate dielectric layer of the FP cavity, the phase difference between the light beams can be changed to obtain output light of different wavelengths. After the incident light is reflected and interfered by the two reflective surfaces, only the light of a specific wavelength related to the optical thickness of the spacing layer and the reflection passband of the reflective layer has a higher transmittance, while the transmittance of other wavelengths of light is very low, showing a bandpass characteristic. The cathode layer 50 of the FP cavity is located on the side of the light-emitting functional layer 40 away from the driving backplane 10, as a reflective layer of the FP cavity. The cathode layer 50 is provided with grooves corresponding to the positions of the anode array in the anode layer 20 on the driving backplane, so that the light reflected to the side of the dielectric layer 60 can be reflected back between the cathode layer 50 and the metal layer 70, ensuring the brightness of the silicon-based OLED display device, and to a certain extent, can reduce the light interference between the light emitted by adjacent FP cavities. Then, a dielectric layer 60 is sputtered on the side of the cathode layer 50 away from the driving backplane 10. For example, the material of the dielectric layer 60 includes SiO2. For example, the dielectric layer 60 can be a nano silicon dioxide film. Finally, a metal layer 70 of a certain thickness is sputtered on the side of the dielectric layer 60 away from the driving backplane 10 as another reflective layer of the FP cavity. The two reflective layers of the FP cavity can include metal films or dielectric films, and the intermediate spacer layer can include air gaps or dielectric films, which are not limited here. For example, the FP cavity formed in this embodiment is composed of parallel cathode layers 50 and metal layers 70 and a dielectric layer 60 spaced in the middle. The incident light is incident on the FP cavity with the intermediate dielectric layer 60 of different thicknesses, and after multiple reflections and interference filtering, different colors of outgoing light can be obtained, thereby realizing the colorization of the silicon-based OLED display device. The colorization of the silicon-based OLED display device can be realized without setting a filter on the silicon-based OLED display device. In other words, the silicon-based OLED display device provided in the present application does not include a filter.

[0078] The technical solution of this embodiment is to sputter an anode layer on the side of the driving backplane away from the driving backplane, and the anode layer is composed of a plurality of anodes arranged in an array, and a light-emitting functional layer is sputtered on the side of the anode layer away from the driving backplane. On the side of the light-emitting functional layer away from the driving backplane, a cathode layer, a dielectric layer and a metal layer are sequentially sputtered, and a groove is provided at the position of the cathode layer corresponding to the anode to form an FP cavity filter layer based on the optical resonance principle. The display panel prepared by this preparation method no longer relies on the low-temperature filter process to achieve colorization, but realizes the colorization of the silicon-based OLED micro-display through multiple reflections and interference filtering of the FP cavity. In the prior art, the colorization of silicon-based OLED display devices mostly relies on the low-temperature filter process. The formation of the low-temperature filter requires the use of a yellow light process, but the yellow light process is difficult to ensure the condition below 100°C, and the process difficulty is relatively large. The present application can reduce the process difficulty. In addition, the material of the existing filter also has the problem of poor solidification and easy to fall off. The FP cavity film layer formed by sputtering in the present application is not easy to fall off, so that the silicon-based OLED micro-display has higher reliability.

[0079] Optional, Figure 5 is a flow chart of another method for preparing a display panel provided by an embodiment of the present invention. Based on the above embodiment, combined with Figure 4 , forming a cathode layer, a dielectric layer and a metal layer on the side of the light-emitting functional layer away from the driving backplane, specifically including:

[0080] S210, providing a driving backplane, wherein the driving backplane includes an anode layer, and the anode layer includes a plurality of anodes arranged in an array.

[0081] S220, forming a light-emitting functional layer on a side of the driving backplane where the anode layer is arranged.

[0082] S230, forming a cathode layer on a side of the light-emitting functional layer away from the driving backplane.

[0083] Specifically, on the side of the light-emitting functional layer 40 away from the driving backplane 10, a cathode metal layer with a thickness of about 30nm is evaporated by a sputtering process, and the material of the cathode metal layer can be metal silver and / or metal magnesium. Optionally, after forming the cathode layer 50, a first metal adhesion layer is formed on the cathode layer 50. A metal chromium adhesion layer with a thickness of 0.5nm-1nm is sputtered or deposited on the cathode layer 50 to enhance the adhesion of other materials deposited on the cathode layer 50 and ensure that the FP cavity is firm and reliable.

[0084] S240, forming a photoresist layer on the cathode layer.

[0085] Specifically, a certain amount of photoresist is spin-coated on the sputtered cathode layer 50 , and the photoresist is spun off at a certain rotation speed and time to form a uniform photoresist layer 80 for subsequent patterning process.

[0086] S250, etching the photoresist layer to form an opening on the photoresist layer to expose the cathode layer.

[0087] Specifically, a patterning process is performed on the photoresist layer 80 corresponding to the position of each anode in the anode layer 20 , and the patterned area is exposed and etched. After development, an opening 90 is formed on the photoresist layer 80 , and the cathode layer 50 is exposed at the opening 90 .

[0088] S260, forming a dielectric layer at the opening positions of the photoresist layer and the cathode layer.

[0089] Specifically, a dielectric layer 60 is sputtered on a side of the photoresist layer 80 away from the driving backplane 10 and at an opening position of the cathode layer 50 , and the dielectric layer 60 covers the entire surface of the display panel.

[0090] S270, removing the photoresist layer and the dielectric layer on the photoresist.

[0091] Specifically, the photoresist layer 80 is dissolved and removed by a dry lift-off process. At the same time, the dielectric layer 60 formed on the photoresist layer 80 is also removed along with the dissolution of the photoresist layer 80, and only the dielectric layer 60 formed at the opening exposing the cathode layer 50 remains on the cathode layer 50 for use in forming the FP cavity later.

[0092] S280, forming a metal layer on the dielectric layer and the cathode layer.

[0093] Specifically, after the dielectric layer 60 corresponding to each anode position in the anode layer 20 is prepared, illustratively, before the metal layer 70 is formed, a second metal adhesion layer is formed on the dielectric layer 60. The second metal adhesion layer can be a chromium metal adhesion layer with a thickness of 0.5nm-1nm to enhance the adhesion between the metal layer 70 and the dielectric layer 60, so that the FP cavity structure remains intact and not easily damaged, which is conducive to the colorization of the silicon-based OLED display device.

[0094] A metal layer 70 of a certain thickness is sputtered on the side of the dielectric layer 60 away from the driving backplane 10 and in the cathode layer 50 region between two adjacent dielectric layers 60 to form an FP cavity with the cathode layer 50. Since another metal layer 70 is sputtered on the cathode layer 50, a groove is formed in the dielectric layer 60 by the metal layer 70, and the side portion of the dielectric layer 60 is also covered with a metal layer 70 of a certain depth. The dielectric layer 60 is in the groove, so that the light irradiated to the side of the dielectric layer 60 can be re-reflected back between the cathode layer 50 and the metal layer 70, and to a certain extent, the light interference generated by the light emitted from the sides of the adjacent FP cavities is reduced.

[0095] Exemplarily, the dielectric layer includes a first dielectric layer, a second dielectric layer, and a third dielectric layer having different thicknesses.

[0096] Figure 6 This is a flow chart of a method for forming an FP cavity in another display panel manufacturing method provided by an embodiment of the present invention. In the manufacturing process of a display device having multiple dielectric layers of different thicknesses, exemplarily, a cathode layer, a dielectric layer and a metal layer are formed on the side of the light-emitting functional layer away from the driving backplane, specifically including the following steps:

[0097] S301, forming a first metal layer on the light-emitting functional layer.

[0098] Specifically, Figure 7 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S240 of the method for forming the FP cavity in the display panel manufacturing method shown in FIG. Figure 7 As shown, a first metal layer 50 with a thickness of about 30 nm is sputtered on the side of the light-emitting functional layer 40 away from the driving backplane 10. The material of the first metal layer 50 can be selected from metal silver and / or metal magnesium. The first metal layer 50 is used as both the cathode of the light-emitting functional layer 40 and one of the metal layers of the FP cavity, thereby saving material costs and reducing the overall thickness of the silicon-based OLED display device, thereby achieving the purpose of miniaturization of the display device.

[0099] S302 , forming a first photoresist layer on the metal layer.

[0100] Specifically, Figure 8 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S302 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Figure 8 As shown, a first photoresist layer 81 of a certain thickness is spin-coated on the first metal layer 70 at a certain rotation speed and time to protect the first metal layer 70. The thickness of the photoresist cannot be too thick or too thin. If the formed photoresist layer is too thick, it will lead to incomplete exposure, and the entire photoresist in the exposed area cannot be dissolved after development; if the formed photoresist layer is too thin, it may cause overexposure, so that the edge of the photoresist that does not need to be exposed is also denatured, resulting in a significant reduction in the photolithography accuracy.

[0101] S303 , etching the first photoresist layer to form an opening on the first photoresist layer to expose a portion of the first metal layer.

[0102] Specifically, Fig. 9 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S303 of the method for forming the FP cavity in the display panel manufacturing method shown in FIG. Fig. 9As shown, on the formed first photoresist layer 81, a patterning process is realized by exposure and etching, and an opening 90 with the same width as the anode is formed at a position directly opposite to the anode, exposing part of the first metal layer 50. The photoresist can be a positive photoresist or a negative photoresist. If a positive photoresist is selected, the opening shape of the cathode area corresponding to the anode position is exposed and etched away; if a negative photoresist is selected, the opening shape of the cathode area corresponding to the anode position is retained, and the remaining part of the photoresist is exposed.

[0103] S304 , forming a first dielectric layer on the first photoresist layer.

[0104] Specifically, Fig.10 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S304 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.10 As shown, a first dielectric layer 61 with a certain thickness is deposited on the etched first photoresist layer 81 .

[0105] S305 , removing the first photoresist layer.

[0106] Specifically, Fig.11 FIG. 6 is a structural diagram corresponding to step S305 of the method for forming the FP cavity in the method for manufacturing the display panel shown in the middle of the embodiment of the present invention. Fig.11 As shown, after the first photoresist layer is removed by a dry lift-off process, the first dielectric layer 61 attached to the first photoresist layer is also removed, and only the first dielectric layer 61 corresponding to the anode position is retained on the first metal layer 50 .

[0107] S306 , forming a second photoresist layer on the first metal layer.

[0108] Specifically, Fig.12 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S306 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.12 As shown, a second photoresist layer 82 is spin-coated on the first metal layer 50 at a certain rotation speed and time to complete the patterning process of the second part.

[0109] S307 , etching the second photoresist layer to form an opening on the second photoresist layer to expose a portion of the first metal layer.

[0110] Specifically, Fig.13 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S307 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.13As shown, an opening with the same width as the anode that exposes the first metal layer is exposed and etched in the area of ​​the second photoresist layer 82 corresponding to the anode position.

[0111] S308 , forming a second dielectric layer on the second photoresist layer.

[0112] Specifically, Fig.14 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S308 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.14 As shown, a second dielectric layer 62 of a certain thickness is sputtered or deposited on the second photoresist layer 82 after the patterning process, and the thickness of the second dielectric layer 62 is different from that of the first dielectric layer 61 .

[0113] S309, removing the second photoresist layer.

[0114] Specifically, Fig.15 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S309 of the method for forming the FP cavity in the display panel manufacturing method shown in FIG. Fig.15 As shown, the second photoresist layer is dissolved by a dry lift-off process. After removing the second photoresist layer, Fig.15 The display panel structure shown has two dielectric layers of different thicknesses on the first metal layer 50 .

[0115] S310 , forming a third photoresist layer on the first metal layer.

[0116] Specifically, Fig.16 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S310 of the method for forming the FP cavity in the display panel manufacturing method shown in FIG. Fig.16 As shown, a third photoresist layer 83 with a certain thickness is spin-coated on the first metal layer 50 for patterning the third dielectric layer.

[0117] S311, etching the third photoresist layer to form an opening on the third photoresist layer to expose a portion of the first metal layer.

[0118] Specifically, Fig.17 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S311 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.17 As shown, at the position corresponding to the anode on the third photoresist layer 83, an opening equal to the width of the anode is exposed and etched to expose the first metal layer.

[0119] S312, forming a third dielectric layer on the third photoresist layer.

[0120] Specifically, Fig.18 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S312 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.18 As shown, a third dielectric layer 63 having a thickness different from that of the first dielectric layer 61 and the second dielectric layer 62 is sputtered or deposited on the etched third photoresist layer 83 .

[0121] S313, removing the third photoresist layer.

[0122] Specifically, Fig.19 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S313 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig.19 As shown, the third photoresist layer is removed by dry lift-off method, and finally the following is obtained: Fig.19 The display panel structure shown has three dielectric layers of different thicknesses on the first metal layer 50 .

[0123] S314 , sputtering or depositing metal material on the first dielectric layer, the second dielectric layer, the third dielectric layer and the cathode layer to form grooves and a second metal layer.

[0124] Specifically, Fig. 20 In the embodiment of the present invention Figure 6 The structure diagram corresponding to step S314 of the method for forming the FP cavity in the method for manufacturing the display panel is shown. Fig. 20 As shown, a 0.5nm-1nm thick chromium metal adhesion layer is firstly sputtered or deposited on the first dielectric layer 61, the second dielectric layer 62 and the third dielectric layer 63 with different thicknesses, and the first metal layer 50 region outside the dielectric layer, and then a second metal layer 70 with a thickness of about 30nm is deposited. The material of the second metal layer 70 can be metal silver and / or metal magnesium, forming FP cavities with different thicknesses for realizing the colorization of silicon-based OLED display devices. And the deposited second metal layer 70 is superimposed on the first metal layer 50, so that a groove is formed around the dielectric layer,

[0125] The display device manufacturing method described in the above steps S301-S314 can ensure a relatively accurate dielectric layer thickness by separately setting and depositing each dielectric layer of corresponding thickness, and the operation process is relatively simple and less prone to errors.

[0126] The embodiment of the present invention further provides a display panel. Figure 4 As shown, the display panel includes: a driving backplane 10 , a light-emitting functional layer 40 , a cathode layer 50 , a dielectric layer 60 and a metal layer 70 .

[0127] The driving backplane 10 includes an anode layer 20 , and the anode layer 20 includes a plurality of anodes arranged in an array.

[0128] The light-emitting functional layer 40 and the anode layer 20 are located on the same side, and the light-emitting functional layer 40 covers the anode layer 20 .

[0129] The cathode layer 50 is located at a side of the light-emitting functional layer 40 away from the driving backplane 10 , and a groove is provided at a position of the cathode layer 50 corresponding to the anode.

[0130] The dielectric layer 60 is disposed in the groove of the cathode and protrudes out of the groove.

[0131] The metal layer 70 is disposed on a side of the dielectric layer 60 away from the cathode layer 50 , and the metal layer 70 and the cathode layer 50 form a FP cavity.

[0132] Specifically, the display panel forms an FP cavity through the cathode layer 50 and the metal layer 70 to realize the colorization of the silicon-based OLED display device. And the dielectric layer 60 of the FP cavity is located in the groove formed by the cathode layer 50, so that the light irradiated on the cathode layer 50 on the side of the FP cavity can be reflected back between the cathode layer 50 and the metal layer 70, which can effectively reduce the light interference caused by the light emitted from the side of the adjacent FP cavity.

[0133] Optional, see Figure 4 Based on the above embodiment, the material of the metal layer 70 is the same as the material of the cathode layer 50 .

[0134] Specifically, the material of the metal layer 70 and the material of the cathode layer 50 can both be metal silver and / or metal magnesium. Since the metal layer 70 and the cathode layer 50 are made of the same material, the cathode layer 50 can be used as both the cathode of the light-emitting functional layer 40 and the first metal layer of the FP cavity. This arrangement can save material costs and reduce the thickness of the silicon-based OLED display device, thereby reducing the volume of the silicon-based OLED display device and making the device miniaturized.

[0135] Optional, Fig.21 is a structural diagram of a display panel provided by an embodiment of the present invention. Fig.21 As shown, based on the above embodiment, the display panel further includes: a packaging layer 100 covering the metal layer 70 and the cathode layer 50 .

[0136] The material of the dielectric layer 60 includes SiO 2 .

[0137] Specifically, after the silicon-based OLED display device is prepared, the device needs to be packaged. The display panel also includes a packaging layer 100 covering the metal layer 70 and the cathode layer 50, which is used to package and protect the device so that the packaging cavity formed after packaging is as vacuum as possible to reduce the damage of water or oxygen in the environment to the light-emitting functional layer material. The packaging layer 100 may include Al2O3101, SiN x 102, TiO2103 and glass 104. Deposition of Al2O3101, SiN x 102 and TiO2103 films can form TFE. The composition of each layer of TFE is: Al2O3 / SiN x / Al2O3 / TiO2, and the thickness of each layer is different. The thickness of the first layer of Al2O3 is about 40nm, and the thickness of SiN x The thickness is about 1000nm, the thickness of the second layer of Al2O3 is about 30nm, and the thickness of TiO2 is about 30nm. Finally, glass 104 is used on TFE to complete the packaging.

[0138] Optionally, based on the above embodiment, continue to refer to Fig. 20 The dielectric layer 60 includes a first dielectric layer 61, a second dielectric layer 62, and a third dielectric layer 63 corresponding to different luminescent colors respectively; the thicknesses of the first dielectric layer 61, the second dielectric layer 62, and the third dielectric layer 63 are all different.

[0139] Specifically, the wavelength of the emitted light can be adjusted according to the different thicknesses of the FP cavity, thereby obtaining light of different colors, and realizing the colorization of the silicon-based OLED display device. Therefore, the first dielectric layer 61, the second dielectric layer 62, and the third dielectric layer 63 in the dielectric layer 60 have different thicknesses. For example, the thickness of the first dielectric layer 61 is about 93 nm, the thickness of the second dielectric layer 62 is about 120 nm, and the thickness of the third dielectric layer 63 is about 158 ​​nm, so that the light emitted by the first dielectric layer 61, the second dielectric layer 62, and the third dielectric layer 63 are different colors.

[0140] An embodiment of the present invention further provides a display device. Fig. 22 Schematic diagram of a display device using a silicon-based OLED display panel provided by an embodiment of the present invention. The display device includes the PM display panel described in any of the above embodiments, and the display device can be a mobile phone panel or a smart watch panel, etc. The display panel included in the display device uses an FP cavity with different thicknesses, so that the colorization of the silicon-based OLED display device can be achieved without relying on a low-temperature filter process.

[0141] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for preparing a display panel, characterized in that: include: Providing a driving back plate, the driving back plate comprising an anode layer, the anode layer comprising a plurality of anodes arranged in an array; Forming a light-emitting functional layer on a side of the driving backplane where the anode layer is provided; A cathode layer, a dielectric layer and a metal layer are formed on a side of the light-emitting functional layer away from the driving backplane; wherein a groove is provided on the cathode layer at a position corresponding to the anode; the dielectric layer is located on the groove on a side of the cathode layer away from the light-emitting functional layer and protrudes from the groove; the metal layer is located on a side of the dielectric layer away from the cathode layer, and the metal layer and the cathode layer form an FP cavity; Wherein, the cathode layer, the dielectric layer and the metal layer are formed on the side of the light-emitting functional layer away from the driving backplane, including: forming a cathode layer on a side of the light-emitting functional layer away from the driving backplane; forming a photoresist layer on the cathode layer; Etching the photoresist layer to form an opening on the photoresist layer to expose the cathode layer; forming the dielectric layer at the opening positions of the photoresist layer and the cathode layer; removing the photoresist layer and the dielectric layer on the photoresist; forming a metal layer on the dielectric layer and the cathode layer; Wherein, the dielectric layer comprises a first dielectric layer, a second dielectric layer and a third dielectric layer with different thicknesses; The cathode layer, the dielectric layer and the metal layer are formed on the side of the light-emitting functional layer away from the driving backplane, comprising: forming a first metal layer on the light-emitting functional layer; forming a first photoresist layer on the metal layer; Etching the first photoresist layer to form an opening on the first photoresist layer to expose a portion of the first metal layer; forming a first dielectric layer on the first photoresist layer; removing the first photoresist layer; forming a second photoresist layer on the first metal layer; Etching the second photoresist layer to form an opening on the second photoresist layer to expose a portion of the first metal layer; forming a second dielectric layer on the second photoresist layer; removing the second photoresist layer; forming a third photoresist layer on the first metal layer; Etching the third photoresist layer to form an opening on the third photoresist layer to expose a portion of the first metal layer; forming a third dielectric layer on the third photoresist layer; removing the third photoresist layer; The groove and the second metal layer are formed by sputtering or depositing a metal material on the first dielectric layer, the second dielectric layer, the third dielectric layer and the cathode layer.

2. The method according to claim 1, characterized in that The photoresist layer is removed by a dry lift-off process.

3. The method according to claim 1, characterized in that: After forming the cathode layer, the method further includes: forming a first metal adhesion layer on the cathode layer; Before forming the metal layer, the method further includes: forming a second metal adhesion layer on the dielectric layer.

4. A display panel, characterized in that: Prepared by the method for preparing a display panel according to any one of claims 1 to 3; The display panel comprises: A driving backplane, the driving backplane comprising an anode layer, the anode layer comprising a plurality of anodes arranged in an array; a light-emitting functional layer, wherein the light-emitting functional layer and the anode layer are located on the same side, and the light-emitting functional layer covers the anode layer; A cathode layer, located at a side of the light-emitting functional layer away from the driving backplane, wherein a groove is provided at a position of the cathode layer corresponding to the anode; A dielectric layer, the dielectric layer is disposed in the groove of the cathode and protrudes out of the groove; A metal layer is disposed on a side of the dielectric layer away from the cathode layer, and the metal layer and the cathode layer form a FP cavity; Wherein, the material of the metal layer is the same as that of the cathode layer.

5. The display panel according to claim 4, characterized in that: Also includes a packaging layer covering the metal layer and the cathode layer; The material of the dielectric layer includes SiO2.

6. The display panel according to claim 4, characterized in that: The dielectric layer comprises a first dielectric layer, a second dielectric layer and a third dielectric layer corresponding to different luminescent colors respectively; the thicknesses of the first dielectric layer, the second dielectric layer and the third dielectric layer are all different.

7. A display device, characterized in that: A display panel comprising any one of claims 4 to 6.

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