A method and device for predicting the surface grinding topography of a gallium oxide substrate

Abstract

The application provides a gallium oxide substrate surface grinding topography prediction method and device, obtains a uniform load of a side of a gallium oxide substrate to be measured away from a polishing pad, inputs the uniform load into a finite element model, obtains a contact pressure between the gallium oxide substrate to be measured and the polishing pad, calculates a grinding removal rate of the gallium oxide substrate to be measured according to the contact pressure, a concentration of abrasive particles, a hardness of the gallium oxide substrate to be measured, a diameter of the abrasive particles, a grinding coefficient, a grinding rotating speed, a grinding time, and an area of the gallium oxide substrate, and calculates an arithmetic average roughness of a surface of the gallium oxide substrate according to the grinding removal rate of the gallium oxide substrate, original heights of each part of the gallium oxide substrate, and an average height of the gallium oxide substrate after grinding. Thus, the prediction of the gallium oxide substrate surface grinding topography is realized, the actual grinding process can be adjusted in time according to the prediction result, the process trial and error cost is reduced, a surface with better flatness is obtained, waste is reduced, and the period from design to manufacturing is shortened.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of computers, and in particular to a gallium oxide substrate surface grinding topography prediction method and device. BACKGROUND

[0002] Gallium oxide (Ga2O3) is a wide-bandgap oxide semiconductor. Gallium oxide substrates have the advantages of high conductivity, low resistance and thermal resistance, high light transmittance, high output power, high voltage resistance, low loss, few crystal defects, and low production cost, and thus are widely used in optoelectronic devices.

[0003] Due to the high hardness and brittleness of gallium oxide, the processing difficulty of gallium oxide substrates is greatly increased. Chemical mechanical planarization (CMP) technology is one of the most commonly used methods for processing gallium oxide because of its high processing efficiency, good surface quality, and high flatness.

[0004] Chemical mechanical polishing of gallium oxide substrates is carried out in a polishing liquid and is a process combining chemical reaction and mechanical friction. Therefore, there are many process parameters that affect the surface grinding topography of gallium oxide substrates. For example, the pH value of the grinding liquid, the pressure of the grinding pad, the abrasive particles in the grinding liquid, and the temperature. If the process parameters are set with deviations, it may cause an increase in the unevenness of the surface grinding topography of the gallium oxide substrate. For example, during the grinding process, too strong chemical reaction can easily cause severe chemical corrosion of the substrate surface, resulting in a large number of pits on the surface. Gallium oxide substrates with poor surface flatness cannot be used, causing a certain waste and high process cost.

[0005] Therefore, how to predict the surface grinding topography of the gallium oxide substrate in advance according to the set process parameters, so as to make timely adjustments according to the prediction results to guide the actual grinding process, reduce the process trial and error cost, obtain a surface with good flatness, and reduce waste, is a technical problem to be solved in the field. SUMMARY

[0006] Therefore, the purpose of the present application is to provide a gallium oxide substrate surface grinding topography prediction method and device, which can guide the actual grinding process to reduce the process trial and error cost, obtain a surface with good flatness, and reduce waste.

[0007] To achieve the above purpose, the present application has the following technical solutions:

[0008] In a first aspect, the present application provides a gallium oxide substrate surface grinding topography prediction method, comprising:

[0009] obtaining the uniform load of the side of the gallium oxide substrate to be measured away from the polishing pad;

[0010] inputting the uniform load into a pre-trained finite element model to obtain a contact pressure between the to-be-tested gallium oxide substrate and the polishing pad;

[0011] calculating a polishing removal rate of the to-be-tested gallium oxide substrate according to the contact pressure, a concentration of abrasive particles, a hardness of the to-be-tested gallium oxide substrate, a diameter of the abrasive particles, a polishing coefficient, a polishing rotation speed, a polishing time, and an area of the to-be-tested gallium oxide substrate;

[0012] calculating an arithmetic average roughness of a surface of the gallium oxide substrate according to the polishing removal rate of the gallium oxide substrate, an original height of each part of the gallium oxide substrate, and an average height of the gallium oxide substrate after polishing.

[0013] In a possible implementation, before the inputting the uniform load into the pre-trained finite element model, the method further includes:

[0014] obtaining a training set of an initial finite element model, the training set including a uniform load of a known gallium oxide substrate away from a side of the polishing pad and a contact pressure between the known gallium oxide substrate and the polishing pad;

[0015] learning a mapping relationship between the uniform load and the contact pressure by using the training set;

[0016] training the initial finite element model according to the mapping relationship to obtain the pre-trained finite element model.

[0017] In a possible implementation, the calculating the polishing removal rate of the to-be-tested gallium oxide substrate according to the contact pressure, the concentration of abrasive particles, the hardness of the to-be-tested gallium oxide substrate, the diameter of the abrasive particles, the polishing coefficient, the polishing rotation speed, the polishing time, and the area of the to-be-tested gallium oxide substrate includes:

[0018] calculating an effective abrasive particle number according to the area of the to-be-tested gallium oxide substrate, the concentration of the abrasive particles, and the diameter of the abrasive particles;

[0019] calculating a stress of a single abrasive particle according to the contact pressure, the area of the to-be-tested gallium oxide substrate, and the effective abrasive particle number;

[0020] calculating a penetration depth of the abrasive particle on the surface of the to-be-tested gallium oxide substrate according to the stress, the hardness of the to-be-tested gallium oxide substrate, and the diameter of the abrasive particles;

[0021] calculating a removal amount of the single abrasive particle according to the penetration depth, the polishing coefficient, the polishing rotation speed, the polishing time, and the diameter of the abrasive particles;

[0022] The removal rate of the to-be-tested gallium oxide substrate is calculated according to the effective abrasive particle quantity, the removal quantity of the single abrasive particle and the area of the to-be-tested gallium oxide substrate.

[0023] In a possible implementation, a specific calculation formula of the effective abrasive particle quantity is as follows:

[0024]

[0025] wherein, Na is the effective abrasive particle quantity, ΔA is the area of the gallium oxide substrate, χ is the concentration of the abrasive particle, and D is the diameter of the abrasive particle.

[0026] In a possible implementation, a specific calculation formula of the stress of the single abrasive particle is as follows:

[0027]

[0028] wherein, F is the stress of the single abrasive particle, and σ is the contact pressure.

[0029] In a possible implementation, a specific calculation formula of the indentation depth is as follows:

[0030] δ w =F / HπD;

[0031] wherein, δ w is the indentation depth, and H is the hardness of the gallium oxide substrate.

[0032] In a possible implementation, a specific calculation formula of the removal quantity of the single abrasive particle is as follows:

[0033]

[0034] wherein, ΔG is the removal quantity of the single abrasive particle, K is the grinding coefficient, V is the grinding rotation speed, and t is the grinding time.

[0035] In a possible implementation, a specific calculation formula of the removal rate of the to-be-tested gallium oxide substrate is as follows:

[0036]

[0037] wherein, Δh is the removal rate of the to-be-tested gallium oxide substrate.

[0038] In a possible implementation, a specific calculation formula of the arithmetic average roughness of the surface of the to-be-tested gallium oxide substrate is as follows:

[0039]

[0040] wherein, Ra is the arithmetic average roughness of the surface of the to-be-tested gallium oxide substrate, h' is the original height of each part of the to-be-tested gallium oxide substrate, h is the height of each part of the to-be-tested gallium oxide substrate after grinding, i = h i - Δh, h i is the original height of each part of the to-be-tested gallium oxide substrate, h' is the height of each part of the to-be-tested gallium oxide substrate after grinding, i is the average height of the to-be-tested gallium oxide substrate after grinding, and n is the total number of each part of the to-be-tested gallium oxide substrate. is the average height of the to-be-tested gallium oxide substrate after grinding, and n is the total number of each part of the to-be-tested gallium oxide substrate.

[0041] In a second aspect, the embodiments of the present application provide a gallium oxide substrate surface grinding topography prediction device, comprising:

[0042] An acquisition unit is configured to acquire a uniform load of a side of a to-be-tested gallium oxide substrate away from a polishing pad;

[0043] An input unit is configured to input the uniform load into a pre-trained finite element model to obtain a contact pressure between the to-be-tested gallium oxide substrate and the polishing pad;

[0044] A first calculation unit is configured to calculate a grinding removal rate of the to-be-tested gallium oxide substrate according to the contact pressure, a concentration of abrasive particles, a hardness of the to-be-tested gallium oxide substrate, a diameter of the abrasive particles, a grinding coefficient, a grinding rotation speed, a grinding time, and an area of the to-be-tested gallium oxide substrate;

[0045] A second calculation unit is configured to calculate an arithmetic average roughness of a surface of the gallium oxide substrate according to the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate, and the average height of the gallium oxide substrate after grinding.

[0046] The embodiments of the present application provide a gallium oxide substrate surface grinding topography prediction method and device, comprising: acquiring a uniform load of a side of a to-be-tested gallium oxide substrate away from a polishing pad; inputting the uniform load into a pre-trained finite element model to obtain a contact pressure between the to-be-tested gallium oxide substrate and the polishing pad; calculating a grinding removal rate of the to-be-tested gallium oxide substrate according to the contact pressure, a concentration of abrasive particles, a hardness of the to-be-tested gallium oxide substrate, a diameter of the abrasive particles, a grinding coefficient, a grinding rotation speed, a grinding time, and an area of the gallium oxide substrate; and calculating an arithmetic average roughness of a surface of the gallium oxide substrate according to the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate, and the average height of the gallium oxide substrate after grinding. Thus, the prediction of the gallium oxide substrate surface grinding topography is realized, which is conducive to analyzing process changes, researching process optimization directions, improving process yield, and timely adjusting the actual grinding process according to the prediction results to guide the actual grinding process, reduce process trial and error costs, obtain a surface with better flatness, reduce waste, and shorten the period from design to manufacturing. BRIEF DESCRIPTION OF DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0048] Figure 1 A flow chart of a gallium oxide substrate surface grinding topography prediction method provided by an embodiment of the present application is shown;

[0049] Figure 2 A schematic diagram of a finite element model for calculating the contact pressure of a gallium oxide substrate to be measured provided by an embodiment of the present application is shown;

[0050] Figure 3 A schematic diagram of a gallium oxide substrate surface meshing provided by an embodiment of the present application is shown;

[0051] Figure 4 A schematic diagram of a gallium oxide substrate surface grinding topography prediction device provided by an embodiment of the present application is shown. DETAILED DESCRIPTION

[0052] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0053] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein, and those skilled in the art can make similar generalizations without departing from the connotation of the present application, therefore the present application is not limited to the specific embodiments disclosed below.

[0054] As described in the background, gallium oxide (Ga2O3) is a wide band gap oxide semiconductor, and gallium oxide substrate has the advantages of high conductivity, low resistance and thermal resistance, high light transmittance, high output power, high voltage resistance, low loss, few crystal defects, low production cost, etc., and therefore is widely used in optoelectronic devices.

[0055] Due to the high hardness and brittleness of gallium oxide, the processing difficulty of gallium oxide substrate is greatly increased, and the chemical mechanical planarization (CMP, Chemical Mechanical Planarization) technology is one of the most commonly used methods for processing gallium oxide due to its high processing efficiency, good processing surface quality and high flatness.

[0056] The chemical mechanical polishing of the gallium oxide substrate is carried out in a polishing liquid, and is a process combining chemical reaction and mechanical friction, so there are many process parameters that affect the polishing topography of the surface of the gallium oxide substrate. For example, the pH value of the polishing liquid, the pressure of the polishing pad, the abrasive particles in the polishing liquid, the temperature, etc. If the process parameters are set with deviation, it may cause the unevenness of the polishing topography of the surface of the gallium oxide substrate to increase. For example, during the polishing process, if the chemical reaction is too strong, it is easy to cause serious chemical corrosion on the surface of the substrate, and a large number of pits appear on the surface. The gallium oxide substrate with poor surface flatness cannot be used, causing a certain waste and high process cost.

[0057] Therefore, how to predict the polishing topography of the surface of the gallium oxide substrate in advance according to the set process parameters, so as to make timely adjustment according to the prediction result to guide the actual polishing process, reduce the process trial and error cost, obtain a surface with good flatness, and reduce waste, is a technical problem to be solved in the field.

[0058] In order to solve the above technical problems, the embodiment of the present application provides a gallium oxide substrate surface polishing topography prediction method and device, comprising: obtaining the uniform load of the side of the to-be-tested gallium oxide substrate away from the polishing pad; inputting the uniform load into a pre-trained finite element model to obtain the contact pressure between the to-be-tested gallium oxide substrate and the polishing pad; calculating the polishing removal rate of the to-be-tested gallium oxide substrate according to the contact pressure, the concentration of the abrasive particles, the hardness of the to-be-tested gallium oxide substrate, the diameter of the abrasive particles, the polishing coefficient, the polishing rotation speed, the polishing time, and the area of the gallium oxide substrate; and calculating the arithmetic average roughness of the surface of the gallium oxide substrate according to the polishing removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate, and the average height of the gallium oxide substrate after polishing. Thus, the prediction of the polishing topography of the surface of the gallium oxide substrate is realized, which is beneficial to analyze the process change, research the process optimization direction, improve the process yield, make timely adjustment according to the prediction result to guide the actual polishing process, reduce the process trial and error cost, obtain a surface with good flatness, reduce waste, and shorten the period from design to manufacturing.

[0059] Exemplary method

[0060] Referring to Figure 1 As shown in the figure, a flowchart of a gallium oxide substrate surface polishing topography prediction method provided by the embodiment of the present application, comprising:

[0061] S101: Obtain the uniform load of the side of the to-be-tested gallium oxide substrate away from the polishing pad.

[0062] In the embodiment of the present application, since the side of the to-be-tested gallium oxide substrate close to the polishing pad is in contact with the grinding polishing pad, in order to predict the grinding topography of the surface of the gallium oxide substrate, the contact pressure between the to-be-tested gallium oxide substrate and the polishing pad needs to be obtained, so as to subsequently judge the grinding condition of the to-be-tested gallium oxide substrate according to the contact pressure and the like.

[0063] In order to obtain the contact pressure between the to-be-tested gallium oxide substrate and the polishing pad, the uniform load of the side of the to-be-tested gallium oxide substrate away from the polishing pad needs to be obtained first, wherein the uniform load refers to the force uniformly distributed on the structure, since the to-be-tested gallium oxide substrate is fixed by clamping above the grinding polishing pad, a certain force, i.e. the uniform load, will be applied to the side of the to-be-tested gallium oxide substrate away from the polishing pad.

[0064] S102: input the uniform load into the pre-trained finite element model to obtain the contact pressure between the to-be-tested gallium oxide substrate and the polishing pad.

[0065] In the embodiment of the present application, in order to calculate the contact pressure between the to-be-tested gallium oxide substrate and the polishing pad, in order to save calculation time and ensure the accuracy of the result, a pre-trained finite element model can be established to solve, since the grinding polishing pad and the to-be-tested gallium oxide substrate are isotropic materials, meet the structural symmetry, and the pressure is uniformly distributed, the calculation model can be simplified as an axisymmetric model. Wherein, isotropic refers to the characteristic that the physical, chemical and the like properties of an object do not change with the direction, that is, the performance values measured in different directions of a certain object are exactly the same, also known as homogeneity, in the embodiment of the present application, isotropic specifically refers to that the performance values measured in different directions of the grinding polishing pad and the to-be-tested gallium oxide substrate are the same.

[0066] Referring to Figure 2 Fig. 1 shows the finite element model for calculating the contact pressure of the to-be-tested gallium oxide substrate provided by the embodiment of the present application, a three-dimensional quasi-static finite element model is established with the center of the substrate as the center. The uniform load (uniform pressure) is applied to the surface of the to-be-tested gallium oxide substrate, the pressure is applied to the retaining ring through the node pair (it is assumed that the retaining ring is a rigid ring in the model), the bottom of the polishing disc is fixedly constrained, the side is symmetrically constrained, the polishing pad and the polishing disc are boundedly constrained, and the binding contact is adopted between the to-be-tested gallium oxide substrate and the polishing pad to prevent the to-be-tested gallium oxide substrate from sliding.

[0067] The uniform load of the side of the to-be-tested gallium oxide substrate away from the polishing pad is input into the pre-trained finite element model to obtain the contact pressure between the to-be-tested gallium oxide substrate and the polishing pad, wherein in one possible implementation manner, the pre-trained finite element model can be obtained by the following way:

[0068] Obtaining a training set of an initial finite element model, the training set comprising: a known uniform load of a gallium oxide substrate away from a side of a polishing pad and a known contact pressure between the gallium oxide substrate and the polishing pad, then learning a mapping relationship between the uniform load and the contact pressure by using the training set, and training the initial finite element model according to the mapping relationship to obtain a pre-trained finite element model.

[0069] In addition, the input condition of the pre-trained finite element model can further input a model parameter such as a material attribute of the to-be-tested gallium oxide substrate in addition to the uniform load, so as to improve the accuracy of the contact pressure in the model solving output.

[0070] S103: calculating a polishing removal rate of the to-be-tested gallium oxide substrate according to the contact pressure, the concentration of the abrasive particles, the hardness of the to-be-tested gallium oxide substrate, the diameter of the abrasive particles, the polishing coefficient, the polishing rotation speed, the polishing time, and the area of the gallium oxide substrate.

[0071] In the embodiment of the present application, in order to predict the polishing topography of the gallium oxide substrate surface, the polishing removal rate of the to-be-tested gallium oxide substrate can be calculated by obtaining a series of parameters such as the contact pressure, the concentration of the abrasive particles, the hardness of the to-be-tested gallium oxide substrate, the diameter of the abrasive particles, the polishing coefficient, the polishing rotation speed, the polishing time, and the area of the to-be-tested gallium oxide substrate, and then obtaining the removed amount of the to-be-tested gallium oxide substrate in polishing, and further obtaining the polishing removal rate of the to-be-tested gallium oxide substrate according to the removed amount.

[0072] In a possible implementation, the effective abrasive particle quantity can be calculated according to the area of the to-be-tested gallium oxide substrate, the concentration of the abrasive particles, and the diameter of the abrasive particles. Optionally, the specific calculation formula of the effective abrasive particle quantity can be:

[0073]

[0074] wherein Na is the effective abrasive particle quantity, ΔA is the area of the to-be-tested gallium oxide substrate, χ is the concentration of the abrasive particles, and D is the diameter of the abrasive particles.

[0075] In a possible implementation, the force of a single abrasive particle can be calculated according to the contact pressure, the area of the to-be-tested gallium oxide substrate, and the effective abrasive particle quantity. In the embodiment of the present application, it is assumed that the concentration of the abrasive particles is large, the to-be-tested gallium oxide substrate does not contact the polishing pad, and the polishing pressure is completely transmitted to the abrasive particles. Optionally, the specific calculation formula of the force of a single abrasive particle can be:

[0076]

[0077] wherein F is the force of a single abrasive particle, and σ is the contact pressure.

[0078] In a possible implementation, the indentation depth of the abrasive particle on the surface of the to-be-tested gallium oxide substrate can be calculated according to the force of the single abrasive particle, the hardness of the to-be-tested gallium oxide substrate, and the diameter of the abrasive particle, and the specific calculation formula of the indentation depth is:

[0079] δ w = F / HπD

[0080] wherein δ w is the indentation depth, and H is the hardness of the gallium oxide substrate.

[0081] In a possible implementation, the removal amount of the single abrasive particle can be calculated according to the indentation depth, the grinding coefficient, the grinding rotation speed, the grinding time, and the diameter of the abrasive particle, and the specific calculation formula of the removal amount of the single abrasive particle is:

[0082]

[0083] wherein ΔG is the removal amount of the single abrasive particle, K is the grinding coefficient, V is the grinding rotation speed, and t is the grinding time.

[0084] In a possible implementation, the grinding removal rate of the to-be-tested gallium oxide substrate can be calculated according to the number of effective abrasive particles, the removal amount of the single abrasive particle, and the area of the to-be-tested gallium oxide substrate, and the specific calculation formula of the grinding removal rate of the to-be-tested gallium oxide substrate is:

[0085]

[0086] wherein Δh is the grinding removal rate of the to-be-tested gallium oxide substrate.

[0087] S104: calculating the arithmetic average roughness of the surface of the gallium oxide substrate according to the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate, and the average height of the gallium oxide substrate after grinding.

[0088] In the embodiment of the present application, in order to accurately predict the grinding morphology of the surface of the gallium oxide substrate, the arithmetic average roughness of the surface of the to-be-tested gallium oxide substrate needs to be calculated, and the specific calculation formula of the arithmetic average roughness of the surface of the to-be-tested gallium oxide substrate is:

[0089]

[0090] wherein Ra is the arithmetic average roughness of the surface of the to-be-tested gallium oxide substrate, h′ i = h i - Δh, h i is the original height of each part of the to-be-tested gallium oxide substrate, and h′ iThe height of each part of the to-be-tested gallium oxide substrate after grinding, The average height of the to-be-tested gallium oxide substrate after grinding, and n is the total number of each part of the to-be-tested gallium oxide substrate.

[0091] Therefore, the surface topography of the to-be-tested gallium oxide substrate can be accurately predicted. After the surface topography of the to-be-tested gallium oxide substrate is predicted, the surface topography of the to-be-tested gallium oxide substrate can be compared with a preset value. If the preset surface smoothness requirement cannot be met, the process parameters can be adjusted, and the calculation can be performed again until a satisfactory surface topography is obtained.

[0092] In a possible implementation, referring to Figure 3 As shown in the figure, the dashed line divides the surface of the to-be-tested gallium oxide substrate into a plurality of grids, that is, the surface of the to-be-tested gallium oxide substrate can be divided into grids for predicting the surface topography, and finally the total topography of the surface of the to-be-tested gallium oxide substrate is obtained by combining the predicted surface topography, so as to improve the accuracy of the prediction of the grinding topography of the to-be-tested gallium oxide substrate. The surface of the to-be-tested gallium oxide substrate is pressed downward on the grinding and polishing pad, and the surface is not flat.

[0093] It should be noted that the number of grid division is not specifically limited in the embodiments of the present application, and can be divided by a person skilled in the art according to the actual situation.

[0094] In a possible implementation, each grinding process parameter provided by the embodiments of the present application can be set to 40-70kP. When the pressure is 40-70kP, a good substrate surface and a high polishing rate can be obtained. The grinding particles are generally low-dispersion SiO2sol particles, and the surface scratch after polishing is less. The experimental temperature is generally room temperature, about 25℃. The grinding liquid is generally an alkaline grinding liquid with a pH value greater than 9.0, which can effectively prevent SiO2sol from precipitating in the grinding liquid with a high pH value.

[0095] The embodiment of the present application provides a gallium oxide substrate surface grinding topography prediction method, which comprises the following steps: obtaining the uniform load of a side of a gallium oxide substrate to be measured away from a polishing pad; inputting the uniform load into a pre-trained finite element model to obtain the contact pressure between the gallium oxide substrate to be measured and the polishing pad; calculating the grinding removal rate of the gallium oxide substrate to be measured according to the contact pressure, the concentration of abrasive particles, the hardness of the gallium oxide substrate to be measured, the diameter of the abrasive particles, the grinding coefficient, the grinding rotation speed, the grinding time and the area of the gallium oxide substrate; and calculating the arithmetic average roughness of the surface of the gallium oxide substrate according to the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate and the average height of the gallium oxide substrate after grinding. Therefore, the gallium oxide substrate surface grinding topography is predicted, which is beneficial to analyze process changes, research process optimization direction, improve process yield, adjust the actual grinding process in time according to the prediction result, reduce process trial and error cost, obtain a surface with better flatness, reduce waste and shorten the period from design to manufacturing.

[0096] Exemplary device

[0097] Referring to Figure 4 As shown in the figure, the embodiment of the present application provides a gallium oxide substrate surface grinding topography prediction device, which comprises:

[0098] The acquisition unit 401 is configured to acquire the uniform load of a side of a gallium oxide substrate to be measured away from a polishing pad.

[0099] The input unit 402 is configured to input the uniform load into a pre-trained finite element model to obtain the contact pressure between the gallium oxide substrate to be measured and the polishing pad.

[0100] The first calculation unit 403 is configured to calculate the grinding removal rate of the gallium oxide substrate to be measured according to the contact pressure, the concentration of abrasive particles, the hardness of the gallium oxide substrate to be measured, the diameter of the abrasive particles, the grinding coefficient, the grinding rotation speed, the grinding time and the area of the gallium oxide substrate.

[0101] The second calculation unit 404 is configured to calculate the arithmetic average roughness of the surface of the gallium oxide substrate according to the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate and the average height of the gallium oxide substrate to be measured after grinding.

[0102] The embodiment of the application provides a device for predicting the polishing topography of a gallium oxide substrate surface, and a method using the device includes: obtaining the uniform load of a gallium oxide substrate to be measured from a side of the gallium oxide substrate away from a polishing pad, inputting the uniform load into a pre-trained finite element model, obtaining the contact pressure between the gallium oxide substrate to be measured and the polishing pad, calculating the polishing removal rate of the gallium oxide substrate to be measured according to the contact pressure, the concentration of abrasive particles, the hardness of the gallium oxide substrate to be measured, the diameter of the abrasive particles, the polishing coefficient, the polishing rotation speed, the polishing time and the area of the gallium oxide substrate, and calculating the arithmetic average roughness of the gallium oxide substrate surface according to the polishing removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate and the average height of the gallium oxide substrate after polishing. Therefore, the polishing topography of the gallium oxide substrate surface is predicted, which is beneficial to analyzing process changes, researching process optimization directions, improving process yield, adjusting in time according to the prediction result to guide actual polishing process, reducing process trial and error costs, obtaining a surface with better flatness, reducing waste and shortening the period from design to manufacturing.

[0103] Each of the embodiments in the specification is described in a progressive manner, and the same or similar parts of each of the embodiments can be referred to each other, and each of the embodiments mainly describes the difference from other embodiments. Especially, for the device embodiments, since the device embodiments are basically similar to the method embodiments, the device embodiments are described more simply, and the related parts can be referred to the part of the method embodiments.

[0104] The above only describes the preferred embodiments of the application, and although the application has disclosed the above preferred embodiments, the application is not limited to the above. Any person skilled in the art can make many possible changes, modifications and equivalent embodiments to the technical solutions of the application without departing from the scope of the technical solutions of the application. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the application, without departing from the technical solutions of the application, still belongs to the protection scope of the technical solutions of the application.

Claims

1. A method for predicting the surface morphology of gallium oxide substrates, characterized in that, include: Obtain the uniform load on the side of the gallium oxide substrate away from the polishing pad; The uniformly distributed load is input into a pre-trained finite element model to obtain the contact pressure between the gallium oxide substrate under test and the polishing pad. The grinding removal rate of the gallium oxide substrate under test is calculated based on the contact pressure, the concentration of abrasive particles, the hardness of the gallium oxide substrate under test, the diameter of the abrasive particles, the grinding coefficient, the grinding speed, the grinding time, and the area of ​​the gallium oxide substrate under test. The arithmetic mean roughness of the gallium oxide substrate surface is calculated based on the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate, and the average height of the gallium oxide substrate after grinding. The calculation of the grinding removal rate of the gallium oxide substrate under test based on the contact pressure, the concentration of abrasive particles, the hardness of the gallium oxide substrate, the diameter of the abrasive particles, the grinding coefficient, the grinding speed, the grinding time, and the area of ​​the gallium oxide substrate under test includes: The effective number of grinding particles is calculated based on the area of ​​the gallium oxide substrate to be tested, the concentration of the grinding particles, and the diameter of the grinding particles. The force on a single abrasive particle is calculated based on the contact pressure, the area of ​​the gallium oxide substrate to be tested, and the effective number of abrasive particles. The indentation depth of the abrasive particles on the surface of the gallium oxide substrate under test is calculated based on the applied force, the hardness of the gallium oxide substrate under test, and the diameter of the abrasive particles. The amount of material removed from a single abrasive particle is calculated based on the indentation depth, the abrasion coefficient, the abrasion speed, the abrasion time, and the diameter of the abrasive particles. The grinding removal rate of the gallium oxide substrate under test is calculated based on the effective number of grinding particles, the amount removed by a single grinding particle, and the area of ​​the gallium oxide substrate under test.

2. The method according to claim 1, characterized in that, Before inputting the uniformly distributed load into the pre-trained finite element model, the method further includes: Obtain a training set for the initial finite element model, the training set including: a uniformly distributed load on the side of the known gallium oxide substrate away from the polishing pad and the contact pressure between the known gallium oxide substrate and the polishing pad; The training set is used to learn the mapping relationship between uniformly distributed load and contact pressure; The pre-trained finite element model is obtained by training the initial finite element model according to the mapping relationship.

3. The method according to claim 1, characterized in that, The specific formula for calculating the number of effective grinding particles is as follows: ； Wherein, Na represents the effective number of grinding particles, The area of ​​the gallium oxide substrate, Where is the concentration of the abrasive particles, and D is the diameter of the abrasive particles.

4. The method according to claim 3, characterized in that, The specific formula for calculating the force on a single abrasive particle is as follows: ； Where F is the force on the individual grinding particle, The contact pressure is [value].

5. The method according to claim 4, characterized in that, The specific formula for calculating the indentation depth is as follows: ； in, The indentation depth is H, and the hardness of the gallium oxide substrate is H.

6. The method according to claim 5, characterized in that, The specific formula for calculating the removal amount of a single grinding particle is as follows: ； in, The amount of a single abrasive particle removed is denoted by K, the abrasive coefficient is denoted by V, the abrasive rotation speed is denoted by t, and the abrasive time is denoted by t.

7. The method according to claim 6, characterized in that, The specific formula for calculating the grinding removal rate of the gallium oxide substrate under test is as follows: ； in, The grinding removal rate of the gallium oxide substrate under test is denoted as .

8. The method according to claim 7, characterized in that, The specific formula for calculating the arithmetic mean roughness of the gallium oxide substrate surface to be tested is as follows: ； Where Ra is the arithmetic mean roughness of the surface of the gallium oxide substrate to be tested. , This refers to the original height of each portion of the gallium oxide substrate under test. The height of each part of the gallium oxide substrate under test after grinding is given. The average height of the gallium oxide substrate under test after grinding is denoted as n, and the total number of parts into which the gallium oxide substrate under test is divided is denoted as n.

9. A device for predicting the surface morphology of a gallium oxide substrate, characterized in that, include: The acquisition unit is used to acquire the uniform load on the side of the gallium oxide substrate to be tested away from the polishing pad; The input unit is used to input the uniformly distributed load into a pre-trained finite element model to obtain the contact pressure between the gallium oxide substrate under test and the polishing pad. The first calculation unit is used to calculate the grinding removal rate of the gallium oxide substrate under test based on the contact pressure, the concentration of abrasive particles, the hardness of the gallium oxide substrate under test, the diameter of the abrasive particles, the grinding coefficient, the grinding speed, the grinding time, and the area of ​​the gallium oxide substrate. The second calculation unit is used to calculate the arithmetic mean roughness of the surface of the gallium oxide substrate based on the grinding removal rate of the gallium oxide substrate, the original height of each part of the gallium oxide substrate, and the average height of the gallium oxide substrate after grinding. The first computing unit is specifically used for: The effective number of grinding particles is calculated based on the area of ​​the gallium oxide substrate to be tested, the concentration of the grinding particles, and the diameter of the grinding particles. The force on a single abrasive particle is calculated based on the contact pressure, the area of ​​the gallium oxide substrate to be tested, and the effective number of abrasive particles. The indentation depth of the abrasive particles on the surface of the gallium oxide substrate under test is calculated based on the applied force, the hardness of the gallium oxide substrate under test, and the diameter of the abrasive particles. The amount of material removed from a single abrasive particle is calculated based on the indentation depth, the abrasion coefficient, the abrasion speed, the abrasion time, and the diameter of the abrasive particles. The grinding removal rate of the gallium oxide substrate under test is calculated based on the effective number of grinding particles, the amount removed by a single grinding particle, and the area of ​​the gallium oxide substrate under test.

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