Light-emitting device, display device, camera device, electronic device, and method for manufacturing light-emitting device

Abstract

Light-emitting device, display device, camera device, electronic device, and method for manufacturing light-emitting device. The light-emitting device has a display region in which at least a first light-emitting element is provided, and a peripheral region located outside the display region, on a substrate. The first light-emitting element has a light-emitting region in which a lower electrode, a light-emitting layer, and an upper electrode are stacked. The light-emitting device further has a first stacked portion between the substrate and the lower electrode of the first light-emitting element, in which a first high-reflection layer and a first low-reflection layer having a lower reflectance than the first high-reflection layer are stacked. The light-emitting device further has a peripheral stacked portion in the peripheral region, in which a peripheral high-reflection layer and a peripheral low-reflection layer having a lower reflectance than the peripheral high-reflection layer are stacked in this order on the substrate from the side on which the substrate is present. The first low-reflection layer has an opening that exposes the first high-reflection layer for at least a portion of the first stacked portion that overlaps the light-emitting region in a plan view.

Description

TECHNICAL FIELD

[0001] The present application relates to a light-emitting device, a display device, an imaging device, an electronic device, and a method for manufacturing a light-emitting device. BACKGROUND

[0002] An organic EL element is a light-emitting element having a pair of electrodes and an organic compound layer containing a light-emitting layer between the electrodes. Organic EL elements exhibit excellent characteristics, i.e., surface light-emitting behavior, light weight, and visibility, and due to this, they are being developed for practical use as light-emitting devices, such as thin display devices, lighting fixtures, head-mounted displays, and light sources for a print head of an electrophotographic printer.

[0003] The demand for organic EL display devices achieving higher resolution has particularly increased. A method using a white organic EL element and color filters (a white + CF method) is known as a technique for providing higher resolution. In the white + CF method, a plurality of color filters having different wavelength dependence of light absorption are provided in the direction of emission of white light emitted by an organic EL element. For example, by forming the respective color filters so that the colors emitted after passing through the color filters are red, green, and blue, full-color display can be achieved by additive color mixing. In the white + CF method, there is no need to form an organic compound layer functioning as a light-emitting pixel unit, and thus it is easy to achieve higher resolution of light-emitting pixels.

[0004] It is known to optimize the optical distance between a light-emitting layer and a reflective film in an organic EL element in order to improve the power consumption and chromaticity of an organic EL display device. Japanese Patent Application Publication No. 2017-142926 (Patent Literature 1) discloses a technique in which, in an organic EL display device of the white + CF method, the optical distance between a lower electrode and a reflective film is made different for each pixel having a different light-emitting color.

[0005] On the other hand, it is known to reduce external light reflection in order to improve the display quality of a display device. Japanese Patent Application Publication No. 2013-054863 (Patent Literature 2) discloses a technique for reducing external light reflection of an electrode arranged outside a display region.

[0006] Patent Literature 1 does not have a statement about a decrease in display quality due to external light reflection. Since the light-emitting device of Patent Literature 1 is provided with an aluminum alloy on the entire region on the light-emitting side of the reflective layer provided in the display region and outside the display region, it is considered that external light reflection in the display region and outside the display region will be large. When external light reflection is large, glare by reflection, coloring, and scattering occur, and the display quality deteriorates. SUMMARY

[0007] In view of the above, an object of the present application is to provide a light-emitting device capable of exhibiting both external light reflection inhibition and high light-emitting efficiency.

[0008] A first aspect of the present disclosure is a light-emitting device having a display region in which at least a first light-emitting element is provided and a peripheral region located at a periphery of the display region, on a substrate, wherein the first light-emitting element has a light-emitting region in which a lower electrode, a light-emitting layer, and an upper electrode are stacked in this order from a side on which the substrate is located; has a first stacked portion between the substrate and the lower electrode of the first light-emitting element, in which a first high-reflection layer and a first low-reflection layer are stacked in this order from the side on which the substrate is located, the first low-reflection layer having a lower reflectance than the first high-reflection layer; and has a peripheral stacked portion in the peripheral region, in which a peripheral high-reflection layer and a peripheral low-reflection layer are stacked in this order on the substrate from the side on which the substrate is located, the peripheral low-reflection layer having a lower reflectance than the peripheral high-reflection layer; wherein, for at least a portion of the first stacked portion overlapping with the light-emitting region in a plan view, the first low-reflection layer has an opening exposing the first high-reflection layer.

[0009] A second aspect of the present disclosure is a light-emitting device having a display region in which at least a first light-emitting element is provided and a peripheral region located at a periphery of the display region, on a substrate, wherein the first light-emitting element has a light-emitting region in which a lower electrode, a light-emitting layer, and an upper electrode are stacked in this order from a side on which the substrate is located; has a first stacked portion between the substrate and the lower electrode of the first light-emitting element, in which a first high-reflection layer and a first low-reflection layer are stacked in this order from the side on which the substrate is located; and has a peripheral stacked portion in the peripheral region, in which a peripheral high-reflection layer and a peripheral low-reflection layer are stacked in this order on the substrate from the side on which the substrate is located, the peripheral low-reflection layer having a lower reflectance than the peripheral high-reflection layer; wherein the first high-reflection layer and the peripheral high-reflection layer are composed of a material having Al or Ag; the first low-reflection layer and the peripheral low-reflection layer are composed of a material having any one of Co, Mo, Pt, Ta, Ti, TiN, and W; and, for at least a portion of the first stacked portion overlapping with the light-emitting region in a plan view, the first low-reflection layer has an opening exposing the first high-reflection layer.

[0010] A third aspect of the present disclosure is a manufacturing method of a light-emitting device having a display region provided with a light-emitting element and a peripheral region located at an outer periphery of the display region, the manufacturing method of the light-emitting device including: a step of sequentially stacking, over a substrate, a high-reflection layer composed of a first material and a low-reflection layer composed of a second material having a reflectance lower than that of the first material; a step of removing at least a portion of the low-reflection layer in the display region to provide an opening region exposing the high-reflection layer; and a step of forming a light-emitting element over the opening region, the light-emitting element including, in order, a lower electrode, a light-emitting layer, and an upper electrode.

[0011] A fourth aspect of the present disclosure is a manufacturing method of a light-emitting device having a display region provided with a light-emitting element and a peripheral region located at an outer periphery of the display region, the manufacturing method of the light-emitting device including: a step of sequentially stacking, over a substrate, a high-reflection layer composed of a material having Al or Ag and a low-reflection layer composed of a material having any of Co, Mo, Pt, Ta, Ti, TiN, or W; a step of removing at least a portion of the low-reflection layer in the display region to provide an opening region exposing the high-reflection layer; and a step of forming a light-emitting element over the opening region, the light-emitting element including, in order, a lower electrode, a light-emitting layer, and an upper electrode.

[0012] Other features of the present application will become apparent from the following description of example embodiments (with reference to the accompanying drawings). BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a cross-sectional schematic view of an example of a light-emitting device according to the first embodiment;

[0014] Figure 2 is a planar schematic view of an example of a light-emitting device according to the first embodiment;

[0015] Figure 3 is a planar schematic view of an example of a light-emitting device according to the first embodiment;

[0016] Figure 4 is a planar schematic view of an example of a light-emitting device according to the first embodiment;

[0017] Figure 5 is a cross-sectional schematic view of an example of a light-emitting device according to the second embodiment;

[0018] Figure 6 is a cross-sectional schematic view of an example of a light-emitting device according to the second embodiment;

[0019] Figure 7 is a planar schematic view of an example of a light-emitting device according to the second embodiment;

[0020] Figure 8 This is a plan view of an example of a light-emitting device according to the second embodiment;

[0021] Figure 9 This is a schematic diagram illustrating a display device according to a third embodiment;

[0022] Figure 10A and Figure 10B This is a schematic diagram showing the camera device and electronic device according to the third embodiment;

[0023] Figure 11A and Figure 11B This is a schematic diagram illustrating a display device according to a third embodiment;

[0024] Figure 12A and Figure 12B This is a schematic diagram showing the lighting device and the movable body according to the third embodiment; and

[0025] Figure 13A and Figure 13B This is a schematic diagram illustrating a wearable device according to a third embodiment. Detailed Implementation

[0026] Embodiments of the present invention are described below with reference to the accompanying drawings. However, the constituent elements described with respect to these embodiments are merely examples, and the technical scope of the present invention is defined by the claims and should not be construed as being limited by the following embodiments.

[0027] Furthermore, the present invention is not limited to or not restricted by the following embodiments. Various modifications (including organic combinations of the various embodiments) can be made based on the basic features disclosed in this specification, and these modifications are not excluded from the scope of this specification. Therefore, constructions provided by combining the various examples given below and their variations are included in the embodiments described in this specification.

[0028] First Implementation Method

[0029] The structure of the organic EL device 10 will be described as a first embodiment of the light-emitting device according to the present invention. Figure 1 This is a cross-sectional schematic diagram of the first embodiment. Figure 2 This is a schematic plan view of the first embodiment, and shows the positional relationship between the first stacked portion 104 in the display area 50 and the outer peripheral stacked portion 404 in the outer peripheral area 400 in the plan view. Figure 1 It is along Figure 2A cross-sectional view of the line segment A-A'. As a light-emitting element, the present embodiment uses an organic EL light-emitting element including an organic light-emitting material in a light-emitting layer, but can also be composed of a light-emitting device using an inorganic EL light-emitting element including an inorganic light-emitting material in a light-emitting layer.

[0030] In the following description, the upward direction refers to the direction of the light-emitting layer with respect to the substrate, and the downward direction refers to the opposite direction. In the present embodiment, the direction of light emission is the upward direction. Furthermore, when the second layer is said to be arranged above the first layer, this includes both cases where the first layer is in contact with the second layer, and where a single third layer or multiple third layers are present between the first layer and the second layer.

[0031] Overall structure

[0032] The organic EL device 10 has a display region 50 in which display is performed, and a peripheral region 400 which is a region other than the display region 50 and is located around the periphery of the display region 50. In the present embodiment, the display region 50 is a region in which the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 are arranged, but the display region 50 is not limited to this. The display region 50 can be a region in which only one of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 is arranged, or a region in which two or more of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 are arranged. Figure 1 In the present embodiment, the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 are arranged in the display region 50, but the number of organic EL elements arranged by the organic EL device 10 is not particularly limited. Since each of these organic EL elements has substantially the same structure, the following description will use the first organic EL element 100 as a representative.

[0033] The organic EL device 10 has a substrate 1, a layered portion 104, 204, 304, 404, an optical interference layer 30, a lower electrode 2, an organic compound layer 3, an upper electrode 4, a protective layer 6, a color filter 121, 221, 321, and a microlens 122, 222, 322. The organic EL device according to the present application does not necessarily require the entire structure shown in the drawing, and a part of this structure can be omitted. Figure 1 The entire structure shown in the drawing, and a part of this structure can be omitted.

[0034] The first organic EL element (first light-emitting element) 100 in the display region 50 has a light-emitting region in which a lower electrode, a light-emitting layer, and an upper electrode are stacked in this order from the side of the substrate. More specifically, the first organic EL element 100 includes a lower electrode 2, an upper electrode 4, and an organic compound layer 3 including at least a light-emitting layer interposed between the lower electrode 2 and the upper electrode 4. A first layered portion 104 is arranged between the lower electrode 2 of the first organic EL element 100 and the substrate 1. The same is true for the second organic EL element 200 and the third organic EL element 300. On the other hand, a peripheral layered portion 404 is arranged in the peripheral region 400. The organic EL device 10 is described in detail below.

[0035] Substrate 1

[0036] The substrate 1 is formed of a material capable of supporting the lower electrode 2, the organic compound layer 3, and the upper electrode 4. For example, glass, plastic, silicon, or the like is suitable for the material of the substrate 1. For example, a switching device (not shown) such as a transistor and / or a wiring 21 and / or an interlayer insulating film 22 can be formed on the substrate 1.

[0037] Lower electrode 2

[0038] From the viewpoint of light emission efficiency, the lower electrode 2 is preferably a thin film of a material exhibiting light transmittance. Specifically, the material of the lower electrode 2 is suitably a transparent conductive oxide such as ITO or IZO, or a metal such as Al, Ag, or Pt, or an alloy thereof. Each of the lower electrodes 2 of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 is electrically isolated. In order to optimize optical interference, the film thickness of the lower electrode 2 can be different for each of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300.

[0039] Organic compound layer 3

[0040] In the first organic EL element 100, the organic compound layer 3 is arranged above the lower electrode 2 and can be formed by a known technique such as vapor deposition, spin coating, or the like. The organic compound layer 3 is a layer containing at least a light-emitting layer and can be composed of a plurality of layers. The plurality of layers can exemplify a hole-injection layer, a hole-transport layer, an electron-blocking layer, a light-emitting layer, a hole-blocking layer, an electron-transport layer, and an electron-injection layer. Light is emitted from the light-emitting layer in the organic compound layer 3 due to recombination of holes injected from the anode and electrons injected from the cathode in the light-emitting layer. The light-emitting layer can have a single-layer structure or a multi-layer structure. A red light-emitting material, a green light-emitting material, and a blue light-emitting material can be present in any of the light-emitting layers, and white light can be obtained by mixing the light-emitting colors. Furthermore, light-emitting materials in complementary relation to each other, such as a blue light-emitting material and a yellow light-emitting material, can be provided in any of the light-emitting layers.

[0041] The organic compound layer 3 can be arranged to be located on the lower electrode 2 of the first organic EL element 100, the lower electrode 2 of the second organic EL element 200, and the lower electrode 2 of the third organic EL element 300. Furthermore, all or a part of the organic compound layer 3 of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 can be patterned in each element. The organic compound layer 3 can also be formed in the outer peripheral region 400 located at the outer periphery of the display region 50.

[0042] Upper electrode 4

[0043] The upper electrode 4 is light-transmissive and is disposed above the organic compound layer 3 of the first organic EL element. Further, the upper electrode 4 can be a semi-transmissive material having the ability to transmit a portion of light reaching its surface while reflecting another portion (i.e., semi-transmissive reflective behavior). The material comprising the upper electrode 4 is constituted, for example, by a transparent conductive oxide such as ITO or IZO or a semi-transmissive material constituted by a metallic material. Examples of the metallic material are: a pure metal such as aluminum, silver, and gold; an alkali metal such as lithium and cesium; an alkaline earth metal such as magnesium, calcium, and barium; an alloy material containing these metallic materials. In particular, for the semi-transmissive material, an alloy whose main component is magnesium or silver is preferable. The upper electrode 4 can be a layered structure of the aforementioned materials as long as it exhibits a preferable transmittance.

[0044] The upper electrode 4 can be disposed so as to be located above the organic compound layer 3 of the first organic EL element 100, the organic compound layer 3 of the second organic EL element 200, and the organic compound layer 3 of the third organic EL element 300. Further, the upper electrode 4 can be formed in the outer peripheral region 400 located at the outer periphery of the display region 50.

[0045] In the present embodiment, the lower electrode 2 can be an anode and the upper electrode 4 can be a cathode, or the lower electrode 2 can be a cathode and the upper electrode 4 can be an anode.

[0046] Insulating layer 5

[0047] In the organic EL device 10 according to the present embodiment, the insulating layer 5 can be disposed at the outer periphery of the lower electrode 2 of the first organic EL element 100. The insulating layer 5 is disposed on a portion of the lower electrode 2 and the lower electrode 2 is exposed in a region where the insulating layer 5 is not provided. The region where the lower electrode 2 is exposed provides a light-emitting region where the organic compound layer 3 emits light. The insulating layer 5 is formed in order to accurately fabricate the first light-emitting region 101 into a desired shape. When the insulating layer 5 is not provided, the first light-emitting region 101 is determined by the shape of the lower electrode 2. The insulating layer 5 is formed of an inorganic material such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO). The insulating layer 5 can be formed using a known technique such as a sputtering method, a chemical vapor deposition method (CVD method), or the like. The insulating layer 5 can also be formed using an organic material such as an acrylic resin or a polyimide resin.

[0048] Optical interference layer 30

[0049] The organic EL device 10 according to the present embodiment has the optical interference layer 30 between the first layer stack 104 and the lower electrode 2 of the first organic EL element 100. Adjusting the thickness of the optical interference layer 30 enables the optical distance between the light-emitting layer of the first organic EL element 100 and the first high-reflection layer 102 to be optimized, and thus the light-emitting efficiency using optical interference can be improved. Figure 1 The optical interference layer 30 of the first organic EL element 100 is illustrated as an example having a three-layer structure composed of the first optical interference layer 31, the second optical interference layer 32, and the third optical interference layer 33; however, the number of layers is not particularly limited and a single-layer structure can be used.

[0050] The second organic EL element 200 and / or the third organic EL element 300 can also have the optical interference layer 30. Different thicknesses are used for the respective optical interference layers in the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300, so that the color of the light emitted from each organic EL element can be adjusted. With the use of the optical interference layer 30 having a multi-layered stack structure, it becomes possible to easily adjust the thickness of the optical interference layer 30 by changing the number of layers corresponding to the element. For example, in the case where the optical interference layer 30 is made thinner in the order of the first organic EL element 100 > the second organic EL element 200 > the third organic EL element 300, three layers (i.e., the first optical interference layer 31, the second optical interference layer 32, and the third optical interference layer 33) are arranged on the first layer stack 104. On the other hand, two layers (i.e., the second optical interference layer 32 and the third optical interference layer 33) are arranged on the second layer stack 204, and only the third optical interference layer 33 can be arranged on the third layer stack 304.

[0051] The optical interference layer 30 is preferably composed of a transparent material, particularly preferably of SiO, SiN, or SiON. Known techniques such as sputtering, CVD, ALD, etc. can be used for the formation method.

[0052] The optical interference layer 30 can not be provided in some or all of the organic EL elements in the organic EL device 10. For example, when the optical interference layer 30 is not provided in the first organic EL element 100, the lower electrode 2 is in contact with the first layer stack 104.

[0053] Layer stacks 104, 204, 304, and 404

[0054] The first organic EL element 100 in this embodiment has a first stacked portion 104 between the lower electrode 2 and the substrate 1. The first stacked portion 104 includes a first pixel reflective region 105 and a first pixel contact region 115 insulated from each other. The first pixel reflective region 105 and the first pixel contact region 115 of the first stacked portion 104 are each configured by sequentially stacking a first high-reflection layer 102 and a first low-reflection layer 103 from the side of the substrate 1. In the first pixel reflective region 105, the first low-reflection layer 103 of the first stacked portion 104 has an opening in at least a portion of the region overlapping the first light-emitting region 101 in the plan view, thereby exposing the first high-reflection layer 102. The optical interference layer 30 is in contact with the first high-reflection layer 102 in the opening region.

[0055] The first high-reflection layer 102 has a higher reflectance than the first low-reflection layer 103, and thus light emitted from the first organic EL element through the lower electrode 2 can be effectively reflected by the first high-reflection layer 102. The light reflected by the first high-reflection layer 102 is emitted from the upper electrode 4 to the light-emission side, and thus the organic EL device according to this embodiment can exhibit a characteristic of high light-emission efficiency. Here, the light-emission side refers to the direction of the upper electrode 4 with respect to the lower electrode 2.

[0056] The second and third organic EL elements 200 and 300 each have a second stacked portion 204 and a third stacked portion 304, respectively. The second stacked portion 204 includes a second pixel reflective region 205 and a second pixel contact region 215 insulated from each other, and the third stacked portion 304 includes a third pixel reflective region 305 and a third pixel contact region 315 insulated from each other. The second stacked portion 204 is configured by sequentially stacking a second high-reflection layer 202 and a second low-reflection layer 203 from the side of the substrate 1, and the third stacked portion 304 is configured by sequentially stacking a third high-reflection layer 302 and a third low-reflection layer 303 from the side of the substrate 1. In the second pixel reflective region 205, the second low-reflection layer 203 of the second stacked portion 204 has an opening in at least a portion of the region overlapping the second light-emitting region 201 in the plan view, thereby exposing the second high-reflection layer 202. In the third pixel reflective region 305, the third low-reflection layer 303 of the third stacked portion 304 has an opening in at least a portion of the region overlapping the third light-emitting region 301 in the plan view, thereby exposing the third high-reflection layer 302. The optical interference layer 30 is in contact with the second high-reflection layer 202 or the third high-reflection layer 302 in the respective opening regions.

[0057] On the other hand, the outer peripheral region 400 has an outer peripheral layered portion 404. The outer peripheral layered portion 404 is configured by sequentially stacking the outer peripheral high-reflection layer 402 and the outer peripheral low-reflection layer 403 from the side on which the substrate 1 is present. In the present embodiment, the outer peripheral low-reflection layer 403 does not have an opening that exposes the outer peripheral high-reflection layer 402. Therefore, when external light is incident on the outer peripheral region 400 from the light exit side, the reflection of the external light is hindered because the outer peripheral low-reflection layer 403 is present on the light exit side of the outer peripheral layered portion 404. In addition, in at least a portion of the region in which the first layered portion 104 and the first light-emitting region 101 of the display region 50 do not overlap with each other, the reflection of external light is hindered because the first low-reflection layer 103 is also present on the light exit side of the first layered portion 104. Therefore, even when external light from the environment is incident on the organic EL device, in the present embodiment, it is possible to suppress factors that reduce the display quality (i.e., reflected glare, coloration, glare, and scattering) associated with the ambient light.

[0058] Regarding the opening of the first low-reflection layer 103 of the first layered portion 104, the opening is arranged in a region overlapping with the first light-emitting region 101, and the effect of the present embodiment is obtained when the opening is present in at least a portion of the region overlapping with the first light-emitting region 101. The size of the opening is not particularly limited as long as the first layered portion 104 has the first low-reflection layer 103; however, it is particularly preferable to be at least as large as the first light-emitting region 101 from the viewpoint of improving the light-emitting efficiency.

[0059] Furthermore, in the outer peripheral layered portion 404 of the outer peripheral region 400, the region in which the outer peripheral low-reflection layer 403 is arranged on the light exit side is preferably the entire region of the outer peripheral layered portion 404 from the viewpoint of suppressing the reflection of external light; however, there can be a position at which a portion of the outer peripheral low-reflection layer 403 is removed. Preferably, in the position at which a portion of the outer peripheral low-reflection layer 403 is removed, a low-reflection material or a light-absorbing material is formed on the light exit side.

[0060] The first high reflective layer 102 of the first layer stack 104 and the outer peripheral high reflective layer 402 of the outer peripheral layer stack 404 are preferably composed of materials having the same main component. The first low reflective layer 103 of the first layer stack 104 and the outer peripheral low reflective layer 403 of the outer peripheral layer stack 404 are preferably composed of materials having the same main component. Here, the main component refers to an element present in the highest proportion (element ratio). Further, the first high reflective layer 102 of the first layer stack 104 and the outer peripheral high reflective layer 402 of the outer peripheral layer stack 404 are preferably composed of materials having substantially the same reflectivity. The first low reflective layer 103 of the first layer stack 104 and the outer peripheral low reflective layer 403 of the outer peripheral layer stack 404 are preferably composed of materials having substantially the same reflectivity. By "substantially the same reflectivity" is meant that the difference in reflectivity is within 10 percentage points. More preferably, it means that the difference in reflectivity is within 5 percentage points.

[0061] The layer stack materials constituting the first layer stack 104 and the outer peripheral layer stack 404 should have a reflectivity satisfying prescribed conditions, but are not particularly limited otherwise. Table 1 provides some typical examples of materials that can constitute the first layer stack 104 and the outer peripheral layer stack 404. Based on considerations of reflectivity relationships, the layer stack materials in each layer stack are preferably selected from the materials provided in Table 1. The difference in reflectivity between the first high reflective layer 102 and the first low reflective layer 103 is preferably at least 10 percentage points, and particularly preferably at least 30 percentage points. For example, the first high reflective layer 102 and the outer peripheral high reflective layer 402 are preferably composed of a material containing Ag or Al, and more preferably composed of a material having Ag or Al as the main component. Further, the first low reflective layer 103 and the outer peripheral low reflective layer 403 are preferably composed of a material having at least any one of, for example, Co, Mo, Pt, Ta, Ti, TiN, or W, and more preferably composed of a material having any one of these materials as the main component. In addition, the first high reflective layer 102 and the outer peripheral high reflective layer 402 and the first low reflective layer 103 and the outer peripheral low reflective layer 403 can be alloys or compounds.

[0062] Reflectivity of some typical materials in Table 1 at 550 nm

[0063] Ag 96％ Al 92％ Co 65％ Mo 57％ Pt 64％ Ta 36％ Ti 50％ TiN 47％ W 49％

[0064] As an example of the material combination, the first high reflective layer 102 and the outer peripheral high reflective layer 402 can be a material having Al as a main component, and the first low reflective layer 103 and the outer peripheral low reflective layer 402 can be a material having Ti or TiN as a main component. In addition, the first high reflective layer 102 and the outer peripheral high reflective layer 402 preferably have Al as a main component thereof and contain Cu. The first low reflective layer 103 and the outer peripheral low reflective layer 403 preferably have TiN as a main component thereof. The first low reflective layer 103 and the outer peripheral low reflective layer 403 preferably have a thickness that provides an effect of providing conductivity and suppressing reflection. When the first low reflective layer 103 and the outer peripheral low reflective layer 403 have TiN as a main component thereof, their thickness is preferably at least 1 nm and not more than 200 nm, more preferably at least 5 nm and not more than 100 nm. Further, a barrier metal such as Ti or TiN can be arranged on the substrate side of the first stacked portion 104 and / or the outer peripheral stacked portion 404.

[0065] The first high reflective layer 102 and the outer peripheral high reflective layer 402 and the first low reflective layer 103 and the outer peripheral low reflective layer 403 can be formed by a known film formation process such as a sputtering method, a CVD method, an ALD method, or the like. By forming a film of a high reflective material on a substrate and then patterning by a known etching process, the first high reflective layer 102 and the outer peripheral high reflective layer 402 can be formed simultaneously from materials having the same main component. Further, by forming a film of a low reflective material on a substrate and then patterning by a known etching process, the first low reflective layer 103 and the outer peripheral low reflective layer 403 can also be formed simultaneously from materials having the same main component. Preferably, by forming a high reflective material on a substrate and then forming a low reflective material and patterning by an etching process, the first stacked portion 104 and the outer peripheral stacked portion 404 can be formed simultaneously.

[0066] During film formation and during patterning by etching, the distance between the first stacked portion 104 and the substrate 1 is preferably substantially the same as the distance between the outer peripheral stacked portion 404 and the substrate 1 from the viewpoint of suppressing process variation. Further, the film thickness of the first high reflective layer 102 is preferably substantially the same as the film thickness of the outer peripheral high reflective layer 402, and the film thickness of the first low reflective layer 103 is preferably substantially the same as the film thickness of the outer peripheral low reflective layer 403.

[0067] The opening region of the first low-reflection layer 103 provided in the first stacked portion 104 can be formed by removing the first low-reflection layer 103 by a known etching process. As long as the reflectance of the first high-reflection layer 102 in the opening region is a desired characteristic, the composition of the first low-reflection layer 103 can exist in the first high-reflection layer 102 exposed in the opening region. For example, the TiN main component of the first low-reflection layer 103 can be contained in the first high-reflection layer 102 exposed in the opening region, as compared to the Al main component of the first high-reflection layer 102. With respect to the desired characteristic, for example, the reflectance of the first high-reflection layer 102 in the opening region is preferably at least 10 percentage points higher, more preferably at least 30 percentage points higher, than the reflectance of the first low-reflection layer 103.

[0068] In the present embodiment, in the case where a low-reflection member is arranged on the light-exit side, the first stacked portion 104 and the outer peripheral stacked portion 404 have a high-reflection member on the substrate side, and thus it is only necessary to remove the first low-reflection layer in the region overlapping the light-emitting region where high reflectance is required. Therefore, the area of the first low-reflection layer 103 of the first stacked portion 104 in the display region 50 can be different from the area in the plan view of the outer peripheral low-reflection layer 403 of the outer peripheral stacked portion 404 in the outer peripheral region 400.

[0069] In the present embodiment, in the outer peripheral region 400, at least a portion of the outer peripheral stacked portion 404 and at least a portion of the upper electrode 4 can overlap in the plan view, and at least one of the portions can be separated from the other in the cross-sectional view. When the upper electrode 4 is semi-transmissive / semi-reflective and / or when there is a large difference in refractive index between the upper electrode 4 and the material on the light-exit side of the upper electrode 4, the upper electrode 4 is provided with high reflectance. In this case, with respect to external light incident from the surroundings of the organic EL device, optical interference occurs by the optical distance between the outer peripheral stacked portion 404 and the upper electrode 4. In the present embodiment, due to the low reflectance of the outer peripheral stacked portion 404, coloration caused by the optical interference occurring between the outer peripheral stacked portion 404 and the upper electrode 4 can be suppressed.

[0070] In addition, when the outer peripheral stacked portion 404, the organic compound layer 3, and the upper electrode 4 all overlap in the plan view, the thickness of the organic compound layer 3 or the light-emitting layer can vary in the plan direction with respect to at least a portion between the outer peripheral low-reflection layer 403 and the upper electrode 4. When the thickness of the organic compound layer 3 between the outer peripheral stacked portion 404 and the upper electrode 4 varies, the optical distance between the outer peripheral stacked portion 404 and the upper electrode 4 thus varies and the wavelength of light enhanced by optical interference also eventually varies. However, in the present embodiment, due to the low reflectance of the outer peripheral stacked portion 404, fluctuations in coloration occurring at the outer peripheral stacked portion 404, the organic compound layer 3, and the upper electrode 4 can be suppressed.

[0071] In this embodiment, the lower electrode 2 can be electrically connected to the first stack 104. By forming the first stack 104 with a conductive material and electrically connecting the lower electrode 2 to the first stack 104, current can flow from the first stack 104 to the first organic EL element 100. More specifically, by connecting the lower electrode 2 to the first high-reflectivity layer 102 via the first low-reflectivity layer 103 of the first stack 104, current can flow from the first high-reflectivity layer 102 to the lower electrode 2. Furthermore, when the optical interference layer 30 is provided, by providing a plug 12 that penetrates the optical interference layer 30 and forming a conductive material within the plug, the lower electrode 2 of the first organic EL element 100 can be electrically connected to the first low-reflectivity layer 103 of the first stack 104. Known conductive materials such as W, Ti, or TiN can be used as conductive materials provided in the plug. The conductive material provided in the plug can be the same material as the lower electrode 2. In other words, the lower electrode 2 can be brought into contact with the first stack 104 through the plug. From the viewpoint of suppressing external light reflection, the position in the first layer 104 that contacts the plug 12 is preferably the first low-reflection layer 103.

[0072] For example, Figure 2 and Figure 3 As shown, the area where the plug is disposed is preferably the pixel contact area 115 where the first low-reflection layer of the first stack 104 exists. When the first stack 104 and the lower electrode 2 are in direct contact, the first low-reflection layer 103 and the lower electrode 2 are particularly preferably a combination that suppresses electrolytic corrosion. For example, preferably, the first low-reflection layer 103 is formed of a material with TiN as the main component and the lower electrode 2 is ITO or IZO.

[0073] exist Figure 2 In the illustrated structure, the first stack 104 has a pixel contact region 115, which is isolated from the first pixel reflective region 105 and electrically connected to the lower electrode 2. More specifically, the first high-reflectivity layer 102 of the first stack 104 in the pixel contact region 115 is connected to a wiring connected to an external power supply. In orthographic projection relative to the substrate 1, the junction of the first high-reflectivity layer 102 and the wiring is arranged at a position that does not overlap with the opening region of the first stack 104. Furthermore, in orthographic projection relative to the substrate 1, the first high-reflectivity layer 102 overlapping the opening region (the first high-reflectivity layer 102 of the first pixel reflective region 105) is separated from the first high-reflectivity layer 102 at the junction with the wiring (the first high-reflectivity layer 102 in the pixel contact region 115). Figure 3In the structure shown, the first pixel reflective region 105 is electrically connected to the pixel contact region 115. In either case, current can flow from the pixel contact region 115 in the first organic EL element 100 into the lower electrode 2.

[0074] Further, the second organic EL element 200 and the third organic EL element 300 can also each have the same pixel contact region 215 and pixel contact region 315, respectively. When the pixel reflective region and the pixel contact region are connected in a certain organic EL element, as shown in Figure 3 As shown, the pixel reflective region of the certain organic EL element is isolated and electrically insulated. On the other hand, when the pixel reflective region of the certain organic EL element is electrically insulated from the pixel contact region, the pixel reflective regions on adjacent organic EL elements can be in contact with each other and can be electrically connected, as shown in Figure 2 As shown, the pixel reflective region of the certain organic EL element is isolated and electrically insulated. On the other hand, when the pixel reflective region of the certain organic EL element is electrically insulated from the pixel contact region, the pixel reflective regions on adjacent organic EL elements can be in contact with each other and can be electrically connected, as shown in Figure 4 As shown, the pixel reflective region of the certain organic EL element is isolated and electrically insulated. On the other hand, when the pixel reflective region of the certain organic EL element is electrically insulated from the pixel contact region, the pixel reflective regions on adjacent organic EL elements can be in contact with each other and can be electrically connected, as shown in

[0075] When the respective pixel reflective regions of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 are electrically connected and the pixel reflective regions are insulated from the pixel contact regions, any electric potential can be established for the pixel reflective regions. In particular, the potential difference between the pixel reflective region and the upper electrode 4 is preferably less than the light emission threshold voltage of the organic EL element. When a defect occurs due to manufacturing deviation, such that the pixel contact region of a certain element is electrically connected to the pixel reflective region, the electric potential of the pixel contact region will be the same as that of the pixel reflective region. Since the pixel contact region and the lower electrode are at the same electric potential, when the potential difference between the pixel reflective region and the upper electrode is established to be less than the light emission threshold voltage of the organic EL element, the organic EL element in which the pixel reflective region and the lower electrode are electrically connected does not emit light. Thus, the likelihood of occurrence of a large pixel defect can be reduced. Further, the electric potential of the pixel reflective region is preferably the same as that of the upper electrode 4.

[0076] Protective layer 6

[0077] In the organic EL device 10 according to the present embodiment, the protective layer 6 can be formed in a manner that covers at least the first organic EL element 100. The protective layer 6 is preferably light-transmissive and contains an inorganic material that exhibits extremely low permeability to oxygen and moisture from the outside. Examples of the inorganic material include silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide (SiO xInorganic materials such as silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (Al2O3), and titanium oxide (TiO2) are particularly preferable. From the viewpoint of sealing properties, the inorganic materials SiN, SiON, and Al2O3 are particularly preferable. The protective layer 6 is preferably formed using a chemical vapor deposition method (CVD method), an atomic layer deposition method (ALD method), or a sputtering method. The protective layer 6 can have a single-layer structure or can have a stacked-layer structure provided by combining the aforementioned materials and / or formation methods, as long as satisfactory moisture-proof properties are present. Furthermore, it can also be a stacked-layer structure of an inorganic material and an organic material such as a resin. Furthermore, the protective layer 6 can be disposed on the upper electrode 4 of the first organic EL element, the upper electrode 4 of the second organic EL element, and the upper electrode 4 of the third organic EL element when the second organic EL element 200 and the third organic EL element 300 are formed. The protective layer 6 can also be arranged so as to extend to and include the outer peripheral region 400.

[0078] Planarization layer 7

[0079] A planarization layer 7 can also be formed on the protective layer 6 of the first organic EL element 100. This planarization layer 7 is preferably formed by a wet method such as spin coating, dip coating, slit coating, doctor blading, and the like. Planarization of the surface of the light-exit side of the planarization layer 7 is easily achieved by performing a wet method. The planarization layer 7 formed by a wet method is preferably cured by, for example, heating or UV irradiation after formation. The planarization layer 7 can be disposed on the protective layer 6 of the first organic EL element, the protective layer 6 of the second organic EL element, and the protective layer 6 of the third organic EL element when the second organic EL element 200 and the third organic EL element 300 are formed.

[0080] Color filters 121, 221, and 321

[0081] A first color filter 121 can be disposed on the light-exit side of the planarization layer 7 of the first organic EL element 100. A second color filter 221 can also be disposed on the light-exit side of the planarization layer 7 of the second organic EL element 200, and a third color filter 321 can also be disposed on the light-exit side of the planarization layer 7 of the third organic EL element 300. The first color filter 121, the second color filter 221, and the third color filter 321 can cause a change in the wavelength components of the transmitted light. The first color filter 121, the second color filter 221, and the third color filter 321 can be formed by coating a color resist on, for example, the substrate of the planarization layer 7, and then patterning it by photolithography. For example, the color resist is composed of a photo-curable resin having a pattern formed by curing the region irradiated with, for example, ultraviolet rays.

[0082] Lenses 122, 222, and 322

[0083] The first lens 122 can be arranged on the light exit side of the first color filter 121 of the first organic EL element 100. The first lens 122 can be arranged on the substrate side of the first color filter 121. The light emitting efficiency of the first organic EL element 100 can be improved by mounting the first lens 122. Further, the second lens 222 can be arranged above or below the second color filter 221 of the second organic EL element 200, and the third lens 322 can be arranged above or below the third color filter 321 of the third organic EL element 300.

[0084] The first lens 122 exhibits light transmissivity and is composed of, for example, an organic material such as an acrylic resin, an epoxy resin, or a silicone resin, or an inorganic material such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO).

[0085] The shape of the first lens 122 can be a convex shape or a concave shape. In the case of a convex shape, a material having a refractive index lower than that of the material constituting the lens is formed on the light exit side of the lens. In particular, a gas such as air, nitrogen, or the like, a low-refractive material such as a silica aerogel or the like, or a vacuum condition is preferable. When the convex shape lens is composed of a high-refractive material such as SiN or the like, the light exit side of the lens can also be composed of a material having a relatively low refractive index, such as an organic material such as an acrylic resin, an epoxy resin, or a silicone resin, or an inorganic material such as silicon oxide (SiO) or the like. In the case where the lens has a concave shape, a material having a refractive index higher than that of the material constituting the lens is formed on the light exit side. The shape of the lens is not particularly limited. It can be a spherical surface or an aspherical surface.

[0086] The materials and shapes of the second lens 222 and the third lens 322 can be the same as those of the first lens 122; however, a material or a shape different from that of the first lens 122 can be used.

[0087] In the present embodiment, a plurality of organic EL elements such as the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 can each be regarded as a sub-pixel, and the plurality of organic EL elements can be regarded as one main pixel. The pixel arrangement of the sub-pixel can be any pixel arrangement, such as a stripe array, a pentile array, a delta array, a Bayer array, or the like. In particular, in the case of a delta array, a circular lens is easily positioned within the display plane, and thus this is preferable. Further, by arranging a plurality of main pixels in the display plane, a high-definition display device can be obtained.

[0088] Advantages of the present embodiment

[0089] In the present embodiment, a low reflectance member is arranged on the light-exit side of the outer peripheral stacked portion 404, and as a result, external light reflection can be suppressed. Furthermore, due to the high reflectance member exposed at the first stacked portion 104 and due to the enhancement of the wavelength components of the irradiation light by the optical interference layer 30, high light emission efficiency can be achieved.

[0090] In the present embodiment, in the first stacked portion 104 and the outer peripheral stacked portion 404, a high reflectance member exists on the substrate side and a low reflectance member is arranged on the light-exit side, and therefore only the first low reflectance layer of the region overlapping the light emission region, which requires high reflectance, needs to be removed.

[0091] In order to suppress external light reflection, in Patent Literature 2, the reflection film on the substrate side of the lower electrode 2 is composed of a low reflectance member arranged on the substrate side and a high reflectance member arranged on the light-exit side. In this structure, in order to suppress external light reflection, for example, the high reflectance member on the light-exit side must be removed by an etching process. Generally, the removal region of the high reflectance member in the display region 50 and the removal region of the high reflectance member in the outer peripheral region are often different regions. For example, it is desirable to remove the entire high reflectance member in the outer peripheral region, while in the display region, it is desirable to leave the high reflectance member in the central region and remove the high reflectance member in the peripheral region. In particular, when the lower electrode 2 and the reflection film are connected using the plug 12, from the viewpoint of preventing galvanic corrosion, it is desirable to remove the high reflectance member and connect the plug 12 to the low reflectance member.

[0092] When the areas of the high reflectance members to be removed in the display region 50 and the outer peripheral region 400 are different, the etching rates eventually differ, and as a result, a process of simultaneously removing the high reflectance material in the display region 50 and the outer peripheral region is not feasible. Furthermore, although the two steps, i.e., the removal process of the high reflectance member in the display region 50 and the removal process of the high reflectance member in the outer peripheral region, can be performed separately, this eventually enlarges the process. In addition, when a residue of the high reflectance member is generated in the display region, there is a risk that galvanic corrosion will occur and the resistance will increase.

[0093] In contrast, in the present embodiment and as described above, within the display region, only the low reflectance layer of the region overlapping the light emission region, which requires high reflectance, needs to be removed, and the low reflectance layer in other regions does not need to be removed. Therefore, the present embodiment makes it possible to produce an organic EL device in which suppression of external light reflection can coexist with high light emission efficiency, by a simple and convenient process.

[0094] Second Embodiment

[0095] As a second embodiment of the light emitting device according to the present application, a structure of an organic EL device 20 provided with a plurality of organic EL devices is described.

[0096] Figure 5 and Figure 6 is a cross-sectional view of the B-B' line segment in Figure 7 and Figure 8 shows the relationship between the first layer stack 104 of the display region 50 and the outer peripheral layer stack of the outer peripheral region 400 in a plan view. Figure 5 is a cross-sectional view of the B-B' line segment in Figure 7 and Figure 6 is a cross-sectional view of the C-C' line segment in Figure 8 In the present embodiment, the outer peripheral region 400 includes a dummy region 500, an upper electrode contact region 600, a wiring region 700, and a moisture-proof region 800.

[0097] Figure 5 and Figure 7 is an example of a structure in which the layer stack 504 of the dummy region 500 and the layer stack 604 of the upper electrode contact region 600 are electrically insulated. Figure 6 and Figure 8 is an example of a structure in which these layer stacks are electrically connected. In addition to whether the layer stack 504 and the layer stack 604 are connected, Figure 5 and Figure 7 have the same structure as Figure 6 and Figure 8 In addition, for those structures not specifically described in the present embodiment, the structures according to the first embodiment can be used.

[0098] The first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 in the display region 50 of the organic EL device 20 exist in a delta array. The dummy region 500 in which dummy pixels are formed is arranged at the outer periphery of the display region 50. The upper electrode contact region 600 for supplying current to the upper electrode 4 is arranged at the outer periphery of the dummy region 500. The wiring region 700 is arranged at the outer periphery of the upper electrode contact region 600, and the moisture-proof region 800 is arranged at the outer periphery of the wiring region 700.

[0099] The dummy region 500

[0100] In Figure 5In this embodiment, the dummy area 500 is arranged in the outer peripheral area 400, which is located at the outer periphery of the display area 50. In the dummy area 500, the outer peripheral high-reflection layer 502 is arranged on the substrate side of the outer peripheral stacked portion 504, and the outer peripheral low-reflection layer 503 is arranged on the light-exit side (the opposite side of the substrate 1) of the outer peripheral stacked portion 504. The outer peripheral high-reflection layer 502 has the same main component as the first high-reflection layer 102 of the first stacked portion 104, and the outer peripheral low-reflection layer 503 has the same main component as the first low-reflection layer 103 of the first stacked portion 104.

[0101] The dummy area 500 is an area in the outer peripheral area 400, and is provided with the same structure as at least a portion of the first organic EL element 100 of the display area 50. By forming the dummy area 500, it is possible to suppress manufacturing variation in the display area 50. For example, as shown in FIGS. 1 and 2, the lower electrode 2, the insulating layer 5, the organic compound layer 3, and the upper electrode 4 can be formed in the dummy area 500, just as in the display area 50. Figure 5 and Figure 6

[0102] Since the outer peripheral low-reflection layer 503 is provided on the light-exit side of the outer peripheral stacked portion 504 in the dummy area 500, it is possible to suppress external light reflected by the outer peripheral area 400 in this embodiment.

[0103] The outer peripheral stacked portion 504 of the dummy area 500 can be insulated from the first stacked portion 104. Further, when the pixel contact area 115 of the first organic EL element 100 is insulated from the pixel reflection area 105, the outer peripheral stacked portion 504 of the dummy area 500 and the pixel reflection area 105 of the display area 50 can be electrically connected, as shown in FIGS. 1 and 2. This also applies to the pixel reflection area 205 of the second organic EL element 200 and the pixel reflection area 305 of the third organic EL element 300. Figure 5 and Figure 7

[0104] Further, in the outer peripheral stacked portion 504 of the dummy area 500, the outer peripheral low-reflection layer 503 can be partially removed, but it is preferable that a light-absorbing material be formed on the light-exit side of the outer peripheral stacked portion 504. The light-absorbing material can be the first color filter 121, the second color filter 221, or the third color filter 321.

[0105] ​​The first layered portion 104 and the outer peripheral layered portion 504 can be formed simultaneously by forming a film of a high-reflectivity material on the substrate, then forming a film of a low-reflectivity material, and patterning by an etching process. From the viewpoint of suppressing processing deviation during film formation and during patterning by etching, the distance between the first layered portion 104 and the substrate 1 is preferably substantially the same as the distance between the outer peripheral layered portion 504 and the substrate 1. Further, the film thickness of the first high-reflectivity layer 102 is preferably substantially the same as the film thickness of the outer peripheral high-reflectivity layer 502, and the film thickness of the first low-reflectivity layer 103 is preferably substantially the same as the film thickness of the outer peripheral low-reflectivity layer 503.

[0106] Upper electrode contact region 600

[0107] In Figure 5 , the upper electrode contact region 600 is arranged in the outer peripheral region 400 located at the outer periphery of the display region 50. In the upper electrode contact region 600, the outer peripheral high-reflectivity layer 602 is arranged to the substrate side of the outer peripheral layered portion 604, and the outer peripheral low-reflectivity layer 603 is arranged to the light-exit side of the outer peripheral layered portion 604. The outer peripheral high-reflectivity layer 602 has the same main component as the first high-reflectivity layer 102 of the first layered portion 104, and the outer peripheral low-reflectivity layer 603 has the same main component as the first low-reflectivity layer 103 of the first layered portion 104.

[0108] The upper electrode contact region 600 is a region having an electrode electrically connected to the upper electrode 4, and is a region capable of supplying current to the upper electrode 4. The upper electrode 4 and the outer peripheral layered portion 604 can be directly connected, or there can be a member that functions as an intermediary in electrical connection between the two between the upper electrode 4 and the outer peripheral layered portion 604. For example, as shown in Figure 5 and Figure 6 , the upper electrode 4 can be electrically connected to the outer peripheral layered portion 604 by forming a plug 606 and an intermediate electrode 605 on the outer peripheral layered portion 604 of the upper electrode contact region 600. The intermediate electrode 605 can be composed of a material having the same main component as the lower electrode 2. Further, the plug 606 can be filled with the intermediate electrode 605, or for example, can be filled with another material such as W, TiN, or Ti. As shown in Figure 5 and Figure 7 , the outer peripheral layered portion 604 can be electrically insulated from the first layered portion 104.

[0109] In the present embodiment, since the outer peripheral low-reflectivity layer 603 is provided on the light-exit side of the outer peripheral layered portion 604 in the upper electrode contact region 600, reflection of external light by the outer peripheral region 400 can be suppressed.

[0110] Furthermore, when the pixel contact area of ​​the first organic EL element 100 is insulated from the pixel reflection area, the outer peripheral stack 604 of the upper electrode contact area 600 and the pixel reflection area 105 of the display area 50 can be electrically connected. This also applies to the pixel reflection area 205 of the second organic EL element 200 and the pixel reflection area 305 of the third organic EL element 300. In this case, the potentials of the upper electrode 4 and the pixel reflection areas 105, 205, and 305 become the same. When a defect occurs due to manufacturing deviation, causing the pixel contact area of ​​an element to be electrically connected to the pixel reflection area, the potential of the pixel contact area is made the same as the potential of the upper electrode 4 when the outer peripheral stack 604 of the upper electrode contact area 600 is connected to the pixel reflection area. Because the upper electrode 4 and the lower electrode 2 have the same potential, the organic EL element with the pixel reflection area and the lower electrode electrically connected does not emit light, and thus large pixel defects can be prevented.

[0111] Furthermore, when the pixel contact area of ​​each organic EL element is insulated from the pixel reflection area as described above, such as Figure 6 and Figure 8 As shown, the outer peripheral stack 604, the outer peripheral stack 504, and the pixel reflection area of ​​the display area 50 can be electrically connected. In this case, the potentials of the upper electrode 4, the outer peripheral stack 604, the outer peripheral stack 504, and the pixel reflection area become the same, and large pixel defects can be prevented as described above.

[0112] The first stack 104 and the outer peripheral stack 604 can be formed simultaneously by forming a film of a high-reflectivity material on a substrate, then forming a film of a low-reflectivity material, and patterning it through an etching process. From the viewpoint of suppressing processing deviations during film formation and during etching patterning, the distance between the first stack 104 and the substrate 1 is preferably approximately the same as the distance between the outer peripheral stack 604 and the substrate 1. Furthermore, the thickness of the first high-reflectivity layer 102 is preferably approximately the same as the thickness of the outer peripheral high-reflectivity layer 602, and the thickness of the first low-reflectivity layer 103 is preferably approximately the same as the thickness of the outer peripheral low-reflectivity layer 603.

[0113] Wiring area 700

[0114] exist Figure 5 In this configuration, the wiring region 700 is disposed within the peripheral region 400 located on the outer periphery of the display region 50. Within the wiring region 700, a peripheral high-reflectivity layer 702 is disposed on the substrate side of the peripheral stack 704, and a peripheral low-reflectivity layer 703 is disposed on the light-emitting side of the peripheral stack 704. The peripheral high-reflectivity layer 702 has the same main components as the first high-reflectivity layer 102 of the first stack 104, and the peripheral low-reflectivity layer 703 has the same main components as the first low-reflectivity layer of the first stack 104.

[0115] The wiring area 700 is the area where the outer peripheral laminate 704, which is electrically insulated from the upper electrode 4, is arranged for wiring. There are no particular restrictions on the application of the wiring.

[0116] In this embodiment, since a peripheral low-reflection layer 703 is provided on the light-emitting side of the peripheral stack 704 in the wiring region 700, the reflection of external light by the wiring region 700 can be suppressed.

[0117] The first stack 104 and the outer peripheral stack 704 can be formed simultaneously by forming a film of a high-reflectivity material on a substrate, then forming a film of a low-reflectivity material, and patterning it through an etching process. From the viewpoint of suppressing processing deviations during film formation and during etching patterning, the distance between the first stack 104 and the substrate 1 is preferably approximately the same as the distance between the outer peripheral stack 704 and the substrate 1. Furthermore, the thickness of the first high-reflectivity layer 102 is preferably approximately the same as the thickness of the outer peripheral high-reflectivity layer 702, and the thickness of the first low-reflectivity layer 103 is preferably approximately the same as the thickness of the outer peripheral low-reflectivity layer 703.

[0118] Moisture-proof area 800

[0119] exist Figure 5 In the display area 50, a moisture-proof region 800 is disposed within a peripheral region 400. Within the moisture-proof region 800, a peripheral high-reflectivity layer 802 is disposed on the substrate side of the peripheral stack 804, and a peripheral low-reflectivity layer 803 is disposed on the light-emitting side of the peripheral stack 804. The peripheral high-reflectivity layer 802 has the same main components as the first high-reflectivity layer 102 of the first stack 104, and the peripheral low-reflectivity layer 803 has the same main components as the first low-reflectivity layer of the first stack 104.

[0120] A moisture-proof zone 800 is arranged at the outermost periphery of the organic EL device and is formed to prevent moisture from seeping in from the surrounding environment. Therefore, from the viewpoint of blocking moisture, the outer peripheral laminate 804 is preferably continuously formed at the outermost periphery of the organic EL device 10. In the moisture-proof zone 800, a plug 805 is arranged on the substrate side of the outer peripheral laminate 804, and a plug 806 is arranged on the light-emitting side of the outer peripheral laminate 804. From the viewpoint of blocking moisture, plugs 805 and 806 are also preferably continuously formed at the outermost periphery of the organic EL device. Furthermore, from the viewpoint of blocking moisture, a contact portion 807 disposed above the plug 806 is also preferably continuously formed at the outermost periphery of the organic EL device. In particular, when the protective layer 6 is provided, the protective layer 6 is more preferably in direct contact with the contact portion 807. The contact portion 807 can be formed of a material having the same main components as the lower electrode 2.

[0121] In this embodiment, since the outer peripheral low-reflection layer 803 is provided on the light-exit side of the outer peripheral stacked portion 804 in the moisture-proof region 800, the moisture-proof region 800 can be inhibited from reflecting external light.

[0122] The first stacked portion 104 and the outer peripheral stacked portion 804 can be formed simultaneously by forming a film of a high-reflection material on the substrate, then forming a film of a low-reflection material, and patterning by an etching process. From the viewpoint of inhibiting processing deviation during film formation and during patterning by etching, the distance between the first stacked portion 104 and the substrate 1 is preferably substantially the same as the distance between the outer peripheral stacked portion 804 and the substrate 1. Further, the film thickness of the first high-reflection layer 102 is preferably substantially the same as the film thickness of the outer peripheral high-reflection layer 802, and the film thickness of the first low-reflection layer 103 is preferably substantially the same as the film thickness of the outer peripheral low-reflection layer 803.

[0123] Third Embodiment

[0124] A third embodiment of the present application will be described. In this embodiment, examples in which the light-emitting device 10 according to the first embodiment and the second embodiment is applied to various devices are described.

[0125] Figure 9 is a schematic view showing a display device 1000 as an example of a display device according to the present embodiment. The display device 1000 can have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The display panel 1005 is a display portion having the light-emitting device 10 according to the first embodiment or the second embodiment and displays using light generated from the light-emitting device 10. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005, respectively. A control circuit including a transistor is printed on the circuit board 1007 and performs various types of control, such as control of the display panel 1005. When the display device is not a portable device, the battery 1008 need not be provided, and even when the display device is a portable device, the battery 1008 can be provided at another position. The display device 1000 can have three types of color filters corresponding to red, green, and blue, respectively. A plurality of color filters can be arranged in a delta array.

[0126] The display device 1000 can be used in a display portion of a portable terminal. In this case, the display device 1000 can have both a display function and an operation function. The portable terminal can be exemplified by a mobile phone such as a smartphone and a tablet computer, a head-mounted display, and the like.

[0127] The display device 1000 can be used in a display portion of an imaging device provided with an optical portion having a plurality of lenses and an imaging element that receives light that has passed through the optical portion. The imaging device can have a display portion that displays information acquired by the imaging element (for example, an image captured by the imaging element). Further, the display portion can be a display portion exposed to the outside of the imaging device or can be a display portion positioned in a viewfinder. The imaging device can be, for example, a digital camera, a digital video camera, or the like.

[0128] Figure 10A is a schematic view illustrating an imaging device 1100 that is an example of an imaging device according to this embodiment. The imaging device 1100 can have a viewfinder 1101, a back display 1102, an operation element 1103, and a housing 1104. The viewfinder 1101 can have a display device according to this embodiment (a display device having the light-emitting device 10 according to the first embodiment or the second embodiment and displaying using light emitted from the light-emitting device 10). In this case, the display device can display not only a captured image but also environmental information, a shooting instruction, or the like. The environmental information can be, for example, the intensity of external light, the direction of external light, the speed of subject motion, the possibility of a subject being shielded by a cover, or the like. The back display 1102 can also have a display device according to this embodiment.

[0129] Information display should be performed as quickly as possible because imaging preferably occupies little time. Therefore, a display device using an organic light-emitting element, which has a fast response speed, is preferably used. For a device in which display speed is important, a display device using an organic light-emitting element can be more suitably used (for example, compared with a liquid crystal display device).

[0130] The imaging device 1100 has an optical portion (not shown). The optical portion has a plurality of lenses and provides an optical image to an imaging element housed in the housing 1104. The plurality of lenses can be focused by adjusting their relative positions. This operation can also be performed automatically. The imaging device 1100 can be regarded as an optical-electric conversion device. An imaging method for an optical-electric conversion device can include a method of detecting a difference from a previous image, a method of cutting out a part of a recorded image, or the like, instead of sequential imaging.

[0131] Figure 10Bis a schematic view illustrating an electronic device 1200 as an example of an electronic device according to the present embodiment. The electronic device 1200 has a display portion 1201, an operation feature 1202, and a housing 1203. The display portion 1201 has the light-emitting device 10 according to the first embodiment or the second embodiment, and displays using light emitted from the light-emitting device 10. The electronic device 1200 can have a circuit, a printed board on which the circuit is mounted, a battery, and a communication portion for communicating with the outside in the housing 1203. The operation feature 1202 can be a button or a touch panel type reaction feature. The operation feature can be a biometric identification feature that performs, for example, fingerprint identification and lock release. An electronic device having a communication portion can also be regarded as a communication device. The electronic device can also have a camera function by arranging a lens and an image pickup element. An image taken by the camera function is displayed on the display portion. A smartphone and a notebook computer are examples of the electronic device.

[0132] Figure 11A is a schematic view illustrating a display device 1300 as an example of a display device according to the present embodiment. The display device 1300 is a display device such as a TV monitor or a PC monitor. The display device 1300 has a frame 1301, a display portion 1302, and a base 1303 that supports the frame 1301 and the display portion 1302. The display portion 1302 has the light-emitting device 10 according to the first embodiment or the second embodiment, and displays using light emitted from the light-emitting device 10. The shape of the base 1303 is not limited to the shape in Figure 11A The lower edge of the frame 1301 can also function as the base 1303. Furthermore, the frame 1301 and the display portion 1302 can be curved. Their radii of curvature can be at least 5000 mm and not more than 6000 mm.

[0133] Figure 11B is a schematic view illustrating a display device 1310 as an example of another display device according to the present embodiment. The display device 1310 is configured to be foldable, i.e., is a so-called foldable display device. The display device 1310 has a first display portion 1311, a second display portion 1312, a housing 1313, and a bending point 1314. Both the first display portion 1311 and the second display portion 1312 have the light-emitting device 10 according to the first embodiment or the second embodiment, and display using light emitted from the light-emitting device 10. The first display portion 1311 and the second display portion 1312 can be a single seamless display device. The first display portion 1311 and the second display portion 1312 can be separated by the bending point. The first display portion 1311 and the second display portion 1312 can display different images from each other, or the first display portion 1311 and the second display portion 1312 can display a single image.

[0134] Figure 12Ais a schematic view illustrating a lighting device 1400 that is an example of a lighting device according to the present embodiment. The lighting device 1400 can have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffuser 1405. The light source 1402 has the light-emitting device 10 according to the first embodiment or the second embodiment. The optical film 1404 can be a color filter (optical filter) that improves the color rendering property of the light source 1402. The light diffuser 1405 can efficiently diffuse light from the light source 1402 and deliver the light over a wide range, such as large-area illumination. The optical film 1404 and the light diffuser 1405 can be provided on the light exit side of the lighting device 1400. A cover can be provided on the outermost side as needed.

[0135] For example, the lighting device 1400 is a device that illuminates the inside of a room. The lighting device 1400 can emit white, daylight white, or other colors (any color from blue to red). White is a color having a color temperature of 4200 K, and daylight white is a color having a color temperature of 5000 K. The lighting device 1400 can have a dimming circuit for adjusting the color of light emitted by the lighting device 1400. The lighting device 1400 can have a power supply circuit connected to the light source 1402. The power supply circuit is a circuit that converts an alternating voltage into a direct voltage. The lighting device 1400 can have a color filter. In addition, the lighting device 1400 can have a heat dissipation element. The heat dissipation element dissipates heat inside the device to the outside of the device, examples of which are high specific heat metals and liquid silicon.

[0136] Figure 12B is a schematic view illustrating a car 1500 that is an example of a moving body according to the present embodiment. The car 1500 can have a tail light 1501 that is an example of a lamp. The tail light 1501 is lit in response to, for example, a brake operation.

[0137] The tail light 1501 has the light-emitting device 10 according to the first embodiment or the second embodiment. The tail light 1501 can have a protective member that protects the light-emitting device 10. The protective member has a certain degree of strength and can use any material as long as the material is transparent, but the protective member is preferably composed of, for example, polycarbonate. A furan dicarboxylic acid derivative, an acrylonitrile derivative, or the like can be mixed into the polycarbonate.

[0138] The car 1500 can have a vehicle body 1503 and a window 1502 mounted to the vehicle body 1503. The window 1502 can be a transparent display and should not be a window for checking the front and rear of the car 1500. The transparent display can have the light-emitting device 10 according to the first embodiment or the second embodiment. In this case, the constituent material of the light-emitting device 10, such as an electrode, is composed of a transparent member.

[0139] The mobile body according to the present embodiment can be, for example, a ship, an airplane, a drone, or the like. The mobile body can have a body and a lamp disposed on the body. The lamp can emit light to notify a position of the body. The lamp has the light emitting device 10 according to the first embodiment or the second embodiment.

[0140] The display device according to the present embodiment (a display device having the light emitting device 10 according to the first embodiment or the second embodiment and performing display using light emitted from the light emitting device 10) can be applied, for example, to a wearable device such as smart glasses, an HMD, smart contact lenses, or the like. The display device according to the present embodiment can also be applied to a system having, for example, a wearable device. A camera display device serving as, for example, a wearable device has a camera device capable of photoelectric conversion of visible light and a display device capable of emitting visible light.

[0141] Figure 13A is a schematic view showing glasses 1600 (smart glasses) as an example of a wearable device according to the present embodiment. A camera device 1602 such as a CMOS sensor or a SPAD is disposed on a front side of a lens 1601 of the glasses 1600. Further, a display device according to the present embodiment (a display device having the light emitting device 10 according to the first embodiment or the second embodiment and performing display using light emitted from the light emitting device 10) is disposed on a back side of the lens 1601.

[0142] The glasses 1600 are further provided with a control device 1603. The control device 1603 functions as a power source that supplies power to the camera device 1602 and the display device. Further, the control device 1603 controls operation of the camera device 1602 and the display device. An optical system for converging light on the camera device 1602 is formed at the lens 1601.

[0143] Figure 13B is a schematic view showing glasses 1610 (smart glasses) as an example of a wearable device according to the present embodiment. The glasses 1610 have a control device 1612, a camera device corresponding to the camera device 1602, and a display device according to the present embodiment installed in the control device 1612. At a lens 1611, the camera device and an optical system for projecting light emitted from the display device are formed inside the control device 1612 and an image is projected on the lens 1611. The control device 1612 functions as a power source that supplies power to the camera device and the display device and also controls operation of the camera device and the display device.

[0144] The control device can have a line-of-sight detection unit that detects a line-of-sight of a wearer of the eyeglasses 1610. The line-of-sight can be detected using infrared radiation. An infrared light emitting unit emits infrared radiation toward eyeballs of a user who is viewing a displayed image. A captured image of the eyeballs is obtained by a camera unit having a light receiving element that detects the emitted infrared light that has been reflected from the eyeballs. By the presence of a light reducing unit that reduces light from the infrared light emitting unit toward the display unit in a plan view, a reduction in image quality projected onto the lens 1611 from the display device is reduced. The line-of-sight of the user to the displayed image is detected from the captured image of the eyeballs obtained by the infrared camera. Any known method can be used for line-of-sight detection using the captured image of the eyeballs. For example, a line-of-sight detection method based on a Purkinje image provided by reflection of the irradiated light by the cornea can be used. More specifically, line-of-sight detection processing based on a pupil corneal reflection method is performed. Using the pupil corneal reflection method, the line-of-sight of the user is detected by calculating a line-of-sight vector representing the direction (angle of rotation) of the eyeballs based on the Purkinje image and an image of the pupil contained in the captured image of the eyeballs.

[0145] When display control is performed based on visual detection (line-of-sight detection), the light emitting device 10 according to the first embodiment or the second embodiment can be preferably applied to smart glasses having a camera device that takes an image of the outside. The smart glasses can display the taken outside information in real time.

[0146] The display device according to the present embodiment (a display device having the light emitting device 10 according to the first embodiment or the second embodiment and displaying using light emitted from the light emitting device 10) can have a camera device having a light receiving element, and can control a displayed image based on user line-of-sight information from the camera device. Specifically, a first field of view region that a user is viewing and a second field of view region other than the first field of view region are determined based on the line-of-sight information. The first field of view region and the second field of view region can be determined by a control device of the display device, or can be received by the display device from an external control device. The display resolution of the first field of view region can be controlled to be higher than the display resolution of the second field of view region in the display region of the display device. That is, the resolution of the second field of view region can be lower than the resolution of the first field of view region.

[0147] Further, the display region can have a first display region and a second display region different from the first display region, and a higher priority region among the first display region and the second display region can be determined based on the line-of-sight information. The first display region and the second display region can be determined by a control device of the display device, or can be received by the display device from an external control device. The resolution of the higher priority region can be controlled to be higher than the resolution of a region other than the higher priority region. That is, the resolution of a region having a relatively lower priority can be lower.

[0148] The AI can be used to determine, for example, a first field of view region, a higher priority region, and the like. The AI can be a model configured to estimate an angle of a line of sight and a distance to a target object in front of the line of sight using an eye image and an actual gaze direction of the eye in the image as teaching data. The AI program can reside in the display device, the camera device, or an external device. If it resides in the external device, it is transmitted to the display device via communication.

[0149] As described above, the use of various devices of the light emitting device 10 according to the first embodiment or the second embodiment makes it possible to perform display and light emission at a high quality level.

[0150] Examples

[0151] Examples of the present application are described below.

[0152] Example 1

[0153] An organic EL device having Figure 1 the structure given below was fabricated.

[0154] First, Al and Ti were formed on the substrate 1 by a sputtering method, and patterned to form the wiring 21. Then, SiO was formed by a CVD method, and the plug 11 was formed by etching. Then, an Al:Cu alloy was formed by a sputtering method, and TiN was additionally formed by a sputtering method to form a laminated film of the Al:Cu alloy and the TiN. The Al:Cu alloy is an example of the first material, and the Al:Cu alloy layer corresponds to the high reflection layer. Similarly, the TiN is an example of the second material, and the TiN layer corresponds to the low reflection layer. The shapes of the first laminated portion 104 for the first organic EL element, the second laminated portion 204 for the second organic EL element, and the third laminated portion 304 for the third organic EL element and the outer peripheral laminated portion 404 were formed by etching the Al:Cu alloy and the TiN. The TiN of the first laminated portion 104 was removed by partial etching to obtain an opening exposing the Al:Cu alloy.

[0155] Then, SiO was formed as the optical interference layer 31 by a CVD method, and the TiN in the optical interference layer 31 and the second laminated portion 204 was removed by etching in the same process to obtain an opening exposing the Al:Cu alloy in the second laminated portion 204. Subsequently, SiO was formed as the optical interference layer 32 by a CVD method, and the TiN of the third laminated portion 304 was removed by etching in the same process to obtain an opening exposing the Al:Cu alloy in the third laminated portion 304. Then, SiO was formed as the optical interference layer 33 by a CVD method.

[0156] By generating the optical interference layer 30 of different film thickness in each of the first, second, and third organic EL elements, the respective desired optical distances are obtained. Subsequently, the TiN of the first, second, and third layer stacks 104, 204, and 304 is exposed by forming the plug 12 in the optical interference layer 30.

[0157] An ITO film is then formed by a sputtering method, and the lower electrodes 2 of the first, second, and third organic EL elements are formed by etching. Subsequently, a SiO film for the insulating layer 5 is formed on the lower electrodes 2 by a CVD method. An opening region is established in the insulating layer 5 for each light emitting element to provide the first, second, and third light emitting regions 101, 201, and 301. The first, second, and third light emitting regions 101, 201, and 301 are confirmed to overlap with the openings exposing the Al:Cu alloy of the first, second, and third layer stacks 104, 204, and 304, respectively, in a plan view.

[0158] An organic compound layer 3 is then formed on the lower electrodes 2. Specifically, a 3-nm-thick compound 1 shown below is formed as a hole injection layer. Next, a 15-nm-thick compound 2 shown below is formed as a hole transport layer, and a 10-nm-thick compound 3 shown below is formed as an electron blocking layer.

[0159] A first light emitting layer having a thickness of 10 nm is formed by providing 97% by weight of a compound 4 shown below as a host material and 3% by weight of a compound 5 shown below as a light emitting dopant. A second light emitting layer having a thickness of 10 nm is formed by providing 98% by weight of the compound 4 shown below as a host material and 1% by weight of a compound 6 shown below and 1% by weight of a compound 7 shown below as light emitting dopants. A 110-nm-thick compound 8 shown below is formed as an electron transport layer. A 1-nm-thick lithium fluoride is formed as an electron injection layer.

[0160]

[0161] A 10-nm-thick MgAg alloy is then formed as an upper electrode 4. The ratio between Mg and Ag is 1:1. A 2-μm-thick SiN film is then formed by a CVD method to provide a protective layer 6. A 300-nm-thick planarization layer 7 is formed on the SiN film by spin coating.

[0162] Then, color filters are formed on the planarization layer 7. The first color filter 121 is a color filter that transmits a red component, the second color filter 221 is a color filter that transmits a green component, and the third color filter 321 is a color filter that transmits a blue component. Then, a planarization layer 8 is formed on each color filter. Subsequently, a lens 122 is formed on the first color filter 121, a lens 222 is formed on the second color filter 221, and a lens 322 is formed on the third color filter 321.

[0163] Comparative Example 1

[0164] The production is performed as in Example 1 except for the formation process of the optical interference layer and the outer peripheral layer 404 of the first stacked portion 104 of the first organic EL element, the second stacked portion 204 of the second organic EL element, and the third stacked portion 304 of the third organic EL element. Differences from Example 1 will be described.

[0165] After the formation of the plug 11, TiN is formed by a sputtering method and an Al:Cu alloy is formed by a sputtering method to form a stacked film of TiN and the Al:Cu alloy. The shape of the outer peripheral layer 404 of the first stacked portion 104 of the first organic EL element, the second stacked portion 204 of the second organic EL element, and the third stacked portion 304 of the third organic EL element is formed by etching TiN and the Al:Cu alloy.

[0166] Then, SiO is formed as the optical interference layer 31 by a CVD method, and the optical interference layer 31 on the first stacked portion 104 is removed by etching. Subsequently, SiO is formed as the optical interference layer 32 by a CVD method, and the optical interference layer 32 on the second stacked portion 204 is removed. After that, SiO is formed as the optical interference layer 33 by a CVD method.

[0167] By generating the optical interference layer 30 having a different film thickness in each of the first organic EL element, the second organic EL element, and the third organic EL element, the corresponding desired optical distance is obtained. The steps from the plug 12 step onward of Example 1 follow.

[0168] Comparison of Example 1 and Comparative Example 1

[0169] The influence of external light reflection is evaluated for the organic EL device of Example 1 and Comparative Example 1. The evaluation is performed under bright light in a case where external light is incident on the organic EL device. In Comparative Example 1, there is strong external light reflection at the display region 50 and the outer peripheral region 400 and reflection glare and coloration are confirmed. On the other hand, in the case of Example 1, compared to Comparative Example 1, it is confirmed that the reflection glare and coloration in the display region 50 and the outer peripheral region 400 are suppressed, and thus the suppression effect on external light reflection can be confirmed for the organic EL device structure of the present application.

[0170] While the application has been described with reference to example embodiments, it will be understood by those skilled in the art that various changes can be made and equivalents can be substituted for elements thereof without departing from the scope of the application. In addition, many modifications can be made to adapt to a particular situation and the appended claims are intended to cover any such modifications without a departuie from the scope of the application.

[0171] The present application can provide a light-emitting device in which suppression of external light reflection can coexist with high light-emitting efficiency.

Claims

1. A light-emitting device, has a display region in which at least a first light-emitting element is provided over a substrate, and a peripheral region located at an outer periphery of the display region, wherein the first light-emitting element has a light-emitting region in which a lower electrode, a light-emitting layer, and an upper electrode are stacked in this order from a side on which the substrate is located; has a first stacked portion between the substrate and the lower electrode of the first light-emitting element, in which a first high-reflection layer and a first low-reflection layer are stacked in this order from the side on which the substrate is located, the first low-reflection layer having a lower reflectance than the first high-reflection layer; and has a peripheral stacked portion in the peripheral region, in which a peripheral high-reflection layer and a peripheral low-reflection layer are stacked in this order over the substrate from the side on which the substrate is located, the peripheral low-reflection layer having a lower reflectance than the peripheral high-reflection layer; characterized in that for at least a portion of the first stacked portion overlapping with the light-emitting region in a plan view, the first low-reflection layer has an opening through which the first high-reflection layer is exposed.

2. The light-emitting device according to claim 1, wherein the first high-reflection layer and the peripheral high-reflection layer are composed of materials having the same main component; and the first low-reflection layer and the peripheral low-reflection layer are composed of materials having the same main component.

3. The light-emitting device according to claim 1, wherein the first high-reflection layer and the peripheral high-reflection layer are composed of materials having substantially the same reflectance; and the first low-reflection layer and the peripheral low-reflection layer are composed of materials having substantially the same reflectance.

4. The light emitting device of claim 1, wherein, the difference between the reflectance of the first high-reflection layer and the reflectance of the first low-reflection layer is at least 10 percentage points.

5. The light-emitting device according to claim 1, wherein the first high-reflection layer is composed of a material in which Al is a main component; and the first low-reflection layer is composed of a material in which Ti or TiN is a main component.

6. The light emitting device of claim 5, wherein, the thickness of the first low-reflection layer is at least 1 nm and not more than 200 nm.

7. The light emitting device according to claim 1, wherein the lower electrode of the first light-emitting element is in contact with the first high-reflection layer with the first low-reflection layer of the first stacked portion interposed therebetween.

8. The light-emitting device according to claim 1, wherein the light-emitting device has an optical interference layer between the first stacked portion and a lower electrode of the first light-emitting element, wherein the lower electrode of the first light-emitting element and the first low-reflection layer of the first stacked portion are electrically connected through a conductive material in a plug which penetrates the optical interference layer.

9. The light-emitting device according to claim 1, wherein the light-emitting device has an optical interference layer between the first stacked portion and a lower electrode of the first light-emitting element, wherein the optical interference layer is in contact with the first high-reflection layer in the opening.

10. The light emitting device according to claim 1, wherein the distance between the first stacked portion and the substrate is substantially the same as the distance between the peripheral stacked portion and the substrate.

11. The light-emitting device according to claim 1, wherein in a plan view, at least a portion of the peripheral low-reflection layer overlaps with at least a portion of the upper electrode; and in a cross-sectional view, at least a portion of the peripheral low-reflection layer is separated from at least a portion of the upper electrode.

12. The light emitting device according to claim 1, wherein, for at least a portion between the peripheral low-reflection layer and the upper electrode, the thickness of the light-emitting layer varies in a planar direction.

13. The light-emitting device according to claim 1, wherein the first high-reflection layer of the first stacked portion is in contact with a wiring connected to an external power supply; and In a projection onto the substrate, the contact between the wiring and the first high-reflection layer does not overlap with the opening.

14. The light emitting device of claim 13, wherein, In a projection onto the substrate, the first high-reflection layer overlapping with the opening is separated from the first high-reflection layer at the contact of the wiring.

15. The light-emitting device according to claim 1, wherein the outer peripheral region includes an upper electrode contact region; and the outer peripheral stack is electrically connected to an upper electrode in the upper electrode contact region.

16. The light-emitting device according to claim 1, wherein the outer peripheral region includes a wiring region; and the outer peripheral stack of the wiring region is a wiring that is not electrically connected to an upper electrode.

17. The light-emitting device according to claim 1, wherein the outer peripheral region includes a moisture-proof region; and the outer peripheral stack in the moisture-proof region is continuously arranged in a manner surrounding the display region.

18. The light-emitting device according to claim 17, wherein a protective layer extending to the outer peripheral region is arranged on a side of the upper electrode opposite to the substrate; a contact portion composed of a material identical to a main component of the lower electrode is continuously arranged in the moisture-proof region in a manner surrounding the display region; at least a part of the outer peripheral stack overlaps with at least a part of the contact portion in a plan view; and the contact portion is in direct contact with the protective layer.

19. The light emitting device of claim 1, wherein, the first light-emitting element is an organic EL element including an organic light-emitting material in the light-emitting layer.

20. A light-emitting device, having a display region provided with at least a first light-emitting element and an outer peripheral region located at an outer periphery of the display region on a substrate, wherein the first light-emitting element has a light-emitting region in which a lower electrode, a light-emitting layer, and an upper electrode are stacked in this order from a side of the substrate; having a first stack between the substrate and the lower electrode of the first light-emitting element, in which a first high-reflection layer and a first low-reflection layer are stacked in this order from the side of the substrate; and having an outer peripheral stack in the outer peripheral region, in which an outer peripheral high-reflection layer and an outer peripheral low-reflection layer are stacked in this order on the substrate from the side of the substrate, the outer peripheral low-reflection layer having a lower reflectance than the outer peripheral high-reflection layer; characterized in that the first high-reflection layer and the outer peripheral high-reflection layer are composed of a material containing Al or Ag; the first low-reflection layer and the outer peripheral low-reflection layer are composed of a material containing any of Co, Mo, Pt, Ta, Ti, TiN, and W; and for at least a part of the first stack overlapping with the light-emitting region in a plan view, the first low-reflection layer has an opening exposing the first high-reflection layer.

21. A display device comprising: a display portion including the light-emitting device according to any one of claims 1 to 20; and a control circuit which controls the display portion.

22. An imaging device comprising: an optical portion; an imaging element which receives light which has passed through the optical portion; and a display portion which displays an image acquired by the imaging element. characterized in that The display portion has the light-emitting device according to any one of claims 1 to 20.

23. An electronic device comprising: a display portion having the light-emitting device according to any one of claims 1 to 20; a housing in which the display portion is arranged; and a communication portion arranged in the housing and communicating with an external.

24. A method for manufacturing a light-emitting device having a display region provided with a light-emitting element and a peripheral region located at an outer periphery of the display region, the method comprising: a step of sequentially stacking, over a substrate, a high-reflection layer composed of a first material and a low-reflection layer composed of a second material having a reflectance lower than that of the first material; a step of removing at least part of the low-reflection layer in the display region to provide an opening exposing the high-reflection layer; and a step of forming a light-emitting element over the opening, the light-emitting element including, in order, a lower electrode, a light-emitting layer, and an upper electrode.

25. The method for manufacturing a light-emitting device according to claim 24, comprising: a step of providing an optical interference layer over the opening and the low-reflection layer; and a step of removing the optical interference layer in a portion of the display region where the opening is not arranged to form a plug exposing the low-reflection layer; wherein in the step of forming the light-emitting element, the lower electrode is formed so that the lower electrode is electrically connected to the low-reflection layer via the plug.

26. The method for manufacturing a light-emitting device according to claim 25, wherein the light-emitting device includes a first light-emitting element and a second light-emitting element in the display region; at least part of the low-reflection layer in a region provided with the first light-emitting element is removed to provide an opening exposing the high-reflection layer; a first optical interference layer is arranged in a region provided with the first light-emitting element and the second light-emitting element; at least part of the first optical interference layer and at least part of the low-reflection layer in a region provided with the second light-emitting element are removed to provide an opening exposing the high-reflection layer; and a second optical interference layer is arranged in a region provided with the first light-emitting element and the second light-emitting element. ​

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