Ion trap and quantum computing device

Abstract

This article discloses an ion trap and a quantum computing device, wherein the ion trap comprises: a direct current (DC) electrode mounted on a preset bracket; a first cutting line is provided at the front end of the DC electrode, and the angle formed by the first cutting line and the side line of the DC electrode close to the center of the ion trap is 80 to 90 degrees; wherein the first cutting line is a cutting line located at the front end of the DC electrode among the cutting lines used to cut the DC electrode into electrode segments; the DC electrode is a blade electrode, and the front end is a portion of the blade electrode with a trapezoidal cross section. In an embodiment of the present invention, the first cutting line located at the front end of the ion trap DC electrode and the side line of the DC electrode close to the center of the ion trap form an angle between 80 and 90 degrees, which not only effectively ensures the processing accuracy of the electrode segmentation, but also avoids the problems of sharp corner fracture and unequal spacing of the electrode segments distributed at the front end, and at the same time reduces the influence of the electrode segmentation processing on the stability of the ion chain.

Description

Technical Field

[0001] This article relates to but is not limited to quantum computing technology, and in particular to an ion trap and a quantum computing device. Background Art

[0002] To perform ion quantum computing, quantum bits need to be encoded in the electronic internal state of the ions. The basis of all this requires the stable capture of ions, that is, the use of ion traps. By applying DC voltage to the DC electrodes of the ion trap and RF voltage to the RF electrodes to form a potential well, charged ions can be captured and imprisoned in a vacuum environment.

[0003] The ion trap commonly used in ion quantum computing is a linear Paul trap, which forms a radio frequency potential well in two radial directions (X and Y directions) and a static potential well in the axial direction (Z), thereby achieving confinement in three-dimensional space. A linear Paul trap usually uses a pair of radio frequency (RF) electrodes to form a radio frequency potential well, and a pair of direct current (DC) electrodes to form a static potential well. However, the ion trap configuration of a linear Paul trap only includes a pair of DC electrodes, and the static potential well formed is a second-order simple harmonic potential well, which cannot control the distance between ions, resulting in instability in the ion crystal, which is not conducive to large-scale quantum computing.

[0004] In order to improve the stability of ionic crystals, blade well structures are used in related technologies to increase the number of DC electrodes and to make multiple DC electrodes arranged along the Z direction. By adjusting the voltage of each DC electrode, a flatter static potential well can be formed, so that large-scale ionic crystals can be stably trapped. Figure 1 is a schematic cross-sectional view of a blade well electrode in the related art, such as Figure 1 As shown, it includes a pair of RF electrodes and a pair of DC electrodes. Applying an RF electric field to the RF electrodes can form a bound potential well from the x direction to the y direction; each DC electrode of the blade well electrode includes multiple electrode segments; Figure 2 is a schematic diagram of DC electrode segmentation in the related art, such as Figure 2 As shown, by adjusting the DC voltage applied to each segment, a flat trapped potential well can be formed in the Z direction; the above-mentioned electrode segments are usually made on a ceramic substrate by the following processes: gold plating on the ceramic substrate; using laser cutting technology to divide the electrode into multiple segments that are not electrically connected to each other. Summary of the invention

[0005] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0006] The embodiments of the present invention provide an ion trap and a quantum computing device, which can ensure the accuracy of electrode segment processing and reduce the influence of electrode segment processing on the stability of the ion chain.

[0007] An embodiment of the present invention provides an ion trap, comprising: a direct current (DC) electrode mounted on a preset bracket;

[0008] The front end of the DC electrode is provided with a first cutting line, and the angle formed by the first cutting line and the edge line of the DC electrode close to the center of the ion trap is 80 degrees to 90 degrees;

[0009] The first cutting line is a cutting line located at the front end of the DC electrode among the cutting lines used to cut the DC electrode into electrode segments; the DC electrode is a blade electrode, and the front end is a portion of the blade electrode with a trapezoidal cross section.

[0010] In an exemplary embodiment, the distance between adjacent first cutting lines is greater than 30 micrometers.

[0011] In an exemplary embodiment, a second cutting line among the cutting lines is arc-shaped;

[0012] The second cutting line is a cutting line located in a connection area; the connection area is a connection transition area between the front end of the DC electrode and other parts of the DC electrode except the front end.

[0013] In an exemplary embodiment, the number of the electrode segments is greater than or equal to five.

[0014] In an exemplary embodiment, the ion trap further comprises: a radio frequency RF electrode mounted on the preset bracket;

[0015] A third cutting line is provided at the front end of the RF electrode, and an angle formed by the third cutting line and a side line of the RF electrode close to the center of the ion trap is 80 degrees to 90 degrees;

[0016] The RF electrode is a blade electrode, and the third cutting line is a cutting line used to cut the front end of the RF electrode.

[0017] In an exemplary embodiment, the number of the third cutting lines is the same as the number of the first cutting lines.

[0018] In an exemplary embodiment, the third cutting line and the first cutting line are distributed at the same position in the static potential well direction of the ion trap.

[0019] On the other hand, an embodiment of the present invention further provides a quantum computing device, comprising the above-mentioned ion trap.

[0020] The ion trap of the technical solution of the present application includes: a direct current (DC) electrode mounted on a preset bracket; a first cutting line is provided at the front end of the DC electrode, and the angle formed by the first cutting line and the side line of the DC electrode close to the center of the ion trap is 80 to 90 degrees; wherein, the first cutting line is a cutting line located at the front end of the DC electrode among the cutting lines used to cut the DC electrode into electrode segments; the DC electrode is a blade electrode, and the front end is the portion of the blade electrode with a trapezoidal cross section. In the embodiment of the present invention, the first cutting line located at the front end of the ion trap DC electrode and the side line of the DC electrode close to the center of the ion trap form an angle between 80 and 90 degrees, which not only effectively ensures the processing accuracy of the electrode segmentation, but also avoids the problems of sharp corner fractures and unequal spacing in the electrode segments distributed at the front end, and at the same time reduces the influence of the electrode segmentation processing on the stability of the ion chain.

[0021] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are used to provide a further understanding of the technical solution of the present invention and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present invention and do not constitute a limitation on the technical solution of the present invention.

[0023] Figure 1 is a cross-sectional schematic diagram of a blade well electrode in the related art;

[0024] Figure 2 is a schematic diagram of DC electrode segmentation in the related art;

[0025] Figure 3 A schematic diagram of the front end of a DC electrode in the related art;

[0026] Figure 4 is a structural block diagram of a DC electrode according to an embodiment of the present invention;

[0027] Figure 5 is a schematic diagram of a first cutting line according to an embodiment of the present invention;

[0028] Figure 6 is a schematic diagram of a DC electrode in which the second cutting line is an arc in an embodiment of the present invention;

[0029] Figure 7 is a schematic diagram of a second cutting line according to an embodiment of the present invention;

[0030] Figure 8 Schematic diagram of the distribution of the first cutting line and the third cutting line in an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other arbitrarily without conflict.

[0032] The steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions. Also, although a logical sequence is shown in the flowchart, in some cases, the steps shown or described can be performed in a sequence different from that shown here.

[0033] In the related art, the DC electrode of the ion trap is a blade electrode, and the cross section of the portion of the DC electrode close to the center of the ion trap is a trapezoid. This article defines the portion of the blade electrode with a trapezoidal cross section as the front end of the blade electrode. The applicant of this application has analyzed and found that: the angle formed by the cutting line that cuts the DC electrode into electrode segments and the edge line of the DC electrode close to the center of the ion trap is less than an acute angle of 80 degrees; Figure 3 A schematic diagram of the front end of a DC electrode in the related art, such as Figure 3 As shown in the figure, Angle 1, Angle 2, Angle 3 and Angle 4 are acute angles formed by the cutting line and the edge line of the DC electrode close to the center of the ion trap (Angle 1, Angle 2, Angle 3 and Angle 4 are the smaller angles of the two angles formed by the cutting line and the edge line of the DC electrode close to the center of the ion trap). The processing of the above-mentioned electrode segments is difficult and has low precision. The sharp-angle structure is prone to sharp-angle breakage during the preparation process of the electrode segments, and the spacing between the electrode segments may be unequal. In addition, the above-mentioned problems of the electrode segments will also affect the stability of the ion chain and the scale of quantum computing.

[0034] The ion trap of the embodiment of the present invention comprises: a direct current (DC) electrode mounted on a preset bracket;

[0035] See also Figure 4 A first cutting line is provided at the front end of the DC electrode, and an angle formed by the first cutting line and a side line of the DC electrode close to the center of the ion trap is 80 degrees to 90 degrees;

[0036] The first cutting line is a cutting line located at the front end of the DC electrode among the cutting lines used to cut the DC electrode into electrode segments; the DC electrode is a blade electrode, and the front end is a portion of the blade electrode having a trapezoidal cross section.

[0037] In an exemplary embodiment, the angle formed by the first cutting line and the edge line of the DC electrode close to the center of the ion trap in the embodiment of the present invention refers to: the smaller angle of the two angles formed by the first cutting line and the edge line of the DC electrode close to the center of the ion trap.

[0038] In an exemplary embodiment, the front end of the embodiment of the present invention is an end of the blade electrode close to the center of the ion trap.

[0039] In an exemplary embodiment, the ion trap of the embodiment of the present invention further includes: a radio frequency (RF) electrode mounted on a preset bracket; in an exemplary embodiment, the RF electrode in the embodiment of the present invention is a blade electrode.

[0040] It should be noted that the bracket in the ion trap in the embodiment of the present invention, and the installation positions of the DC electrode and the RF electrode can be determined by referring to the relevant technology, and the specific implementation is not intended to limit the protection scope of the present application.

[0041] In an exemplary embodiment, Figure 4 As shown, the ion trap of the embodiment of the present invention further includes a ground electrode located on the same blade electrode as the DC electrode, and the ground electrode and the DC electrode are electrically isolated from each other; here, the design of the ground electrode can refer to the relevant theoretical design. The specific implementation is not used to limit the protection scope of this application and will not be repeated here.

[0042] It should be noted that, in the embodiment of the present invention, the RF electrode is used to form a radio frequency potential well with reference to the relevant technology, and the DC electrode is used to form a static potential well.

[0043] In the embodiment of the present invention, the first cutting line located at the front end of the ion trap DC electrode and the edge line of the DC electrode close to the center of the ion trap form an angle between 80 degrees and 90 degrees, which not only effectively ensures the electrode segment processing accuracy, but also avoids the problems of sharp corner breakage and uneven spacing of the electrode segments distributed at the front end, and at the same time reduces the influence of the electrode segment processing on the stability of the ion chain.

[0044] In an exemplary embodiment, how to form the portion of the cutting line of the electrode segment other than the first cutting line can be implemented with reference to relevant theories. The specific implementation is not used to limit the protection scope of the present application and will not be elaborated here.

[0045] In an exemplary embodiment, the angle formed by the first cutting line in the embodiment of the present invention and the edge line of the DC electrode close to the center of the ion trap is a right angle; Figure 5 is a schematic diagram of a first cutting line according to an embodiment of the present invention, Figure 5 As shown, the first cutting line forms a right angle with the edge of the DC electrode close to the center of the ion trap.

[0046] In an exemplary embodiment, at the front end of the DC electrode in the embodiment of the present invention, the distance between the first cutting lines of adjacent cutting electrode segments is greater than 30 micrometers.

[0047] In an exemplary embodiment, the width of the cutting line of the embodiment of the present invention may be 50 microns.

[0048] In an exemplary embodiment, the length of the first cutting line in the embodiment of the present invention may be smaller than the width (the height in the direction perpendicular to the static potential well) of the front end of the DC electrode.

[0049] In an exemplary embodiment, the second cutting line in the cutting line of the embodiment of the present invention is arc-shaped, wherein the second cutting line is a cutting line located in a connection area; the connection area is a connection transition area between the front end of the DC electrode and other parts of the DC electrode except the front end.

[0050] It should be noted that the portion other than the front end in the embodiment of the present invention may be the portion of the DC electrode with a rectangular cross section after removing the ground electrode and the front end with a trapezoidal cross section. Then, the connection area is the area where the trapezoidal cross section and the rectangular cross section are connected. Figure 6 is a schematic diagram of a DC electrode in which the second cutting line is an arc in an embodiment of the present invention, Figure 7 is a schematic diagram of the second cutting line of the embodiment of the present invention, see Figure 6 and Figure 7 The second cutting line encircled by the dotted circle is an arc.

[0051] In an exemplary embodiment, the shape, length, etc. of the second cutting line of the embodiment of the present invention can be determined by analyzing the cutting process.

[0052] The second cutting line in the embodiment of the present invention adopts an arc structure, which can further reduce the difficulty of processing the DC electrode.

[0053] In an exemplary embodiment, the number of electrode segments in the embodiment of the present invention is greater than or equal to 5.

[0054] The number of segmented electrodes included in the DC electrode of the embodiment of the present invention is greater than or equal to 5. Under the condition of ensuring the processing accuracy, by increasing the number of electrode segments, a structural basis is provided for realizing more complex ion trap functions; in an exemplary embodiment, the DC electrode can be divided into seven segments in an embodiment of the present invention, and the three electrode segments on the left can be used as ion capture zones, and the five electrode segments on the right can be used to construct ion trap zones; wherein, the third electrode segment from the left is a common electrode, belonging to both the ion capture zone and the ion trap zone. The ions are first captured and initially cooled in the capture zone, and then the ions are transferred to the ion trap zone for further quantum manipulation by changing the DC voltage on each electrode segment.

[0055] In an exemplary embodiment, the ion trap of the embodiment of the present invention further includes: a radio frequency RF electrode mounted on a preset bracket;

[0056] A third cutting line is provided at the front end of the RF electrode, and the angle formed by the third cutting line and the edge line of the RF electrode close to the center of the ion trap is 80 degrees to 90 degrees; wherein the RF electrode is a blade electrode, and the third cutting line is a cutting line used to cut the front end of the RF electrode.

[0057] The embodiment of the present invention can further improve the stability of the ion chain of the ion trap by arranging the third cutting line on the RF electrode.

[0058] In an exemplary embodiment, the number of the third cutting lines in the embodiment of the present invention is the same as the number of the first cutting lines.

[0059] In an exemplary embodiment, the third cutting line and the first cutting line in the embodiment of the present invention are distributed at the same position in the static potential well direction of the ion trap; the DC electrode and the RF electrode in the embodiment of the present invention are both blade electrodes, Figure 8 Schematic diagram of the distribution of the first cutting line and the third cutting line according to an embodiment of the present invention. Figure 8 As shown, according to the distribution position of the first cutting line in the static potential well direction of the ion trap, the embodiment of the present invention determines the distribution position of the third cutting line on the RF electrode. In the figure, the distribution position of the four third cutting lines at the front end of the RF electrode and the distribution position of the four first cutting lines at the front end of the DC electrode on the blade electrode are the same.

[0060] An embodiment of the present invention further provides a quantum computing device, comprising the above-mentioned ion trap.

[0061] In an exemplary embodiment, the quantum computing device in the embodiment of the present invention may include: a quantum computer, a quantum simulation device and a precision measurement device.

[0062] It will be appreciated by those skilled in the art that all or some of the steps, systems, and functional modules / units in the methods disclosed above may be implemented as software, firmware, hardware, and appropriate combinations thereof. In hardware implementations, the division between the functional modules / units mentioned in the above description does not necessarily correspond to the division of physical components; for example, a physical component may have multiple functions, or a function or step may be performed by several physical components in cooperation. Some or all components may be implemented as software executed by a processor, such as a digital signal processor or a microprocessor, or implemented as hardware, or implemented as an integrated circuit, such as an application-specific integrated circuit. Such software may be distributed on a computer-readable medium, which may include a computer storage medium (or non-transitory medium) and a communication medium (or temporary medium). As known to those skilled in the art, the term computer storage medium includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data). Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital versatile disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tapes, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to store the desired information and can be accessed by a computer. In addition, it is well known to those of ordinary skill in the art that communication media typically contain computer-readable instructions, data structures, program modules, or other data in a modulated data signal such as a carrier wave or other transport mechanism, and may include any information delivery media.

Claims

1. An ion trap, comprising: A direct current (DC) electrode mounted on a pre-set support; The front end of the DC electrode is provided with a first cutting line, and the angle formed by the first cutting line and the edge line of the DC electrode close to the center of the ion trap is 80 degrees to 90 degrees; Among them, the first cutting line is a cutting line located at the front end of the DC electrode among the cutting lines used to cut the DC electrode into electrode segments; the DC electrode is a blade electrode, and the front end is the part of the blade electrode with a trapezoidal cross-section; the ion trap also includes: a radio frequency RF electrode installed on the preset bracket; a third cutting line is arranged at the front end of the RF electrode, and the angle formed by the third cutting line and the edge line of the RF electrode close to the center of the ion trap is 80 degrees to 90 degrees; the RF electrode is a blade electrode, and the third cutting line is a cutting line used to cut the front end of the RF electrode; the third cutting line and the first cutting line have the same distribution position in the static potential well direction of the ion trap.

2. The ion trap according to claim 1, characterized in that The distance between adjacent first cutting lines is greater than 30 micrometers.

3. The ion trap according to claim 1, characterized in that: The second cutting line among the cutting lines is arc-shaped; The second cutting line is a cutting line located in a connection area; the connection area is a connection transition area between the front end of the DC electrode and other parts of the DC electrode except the front end.

4. The ion trap according to claim 1, characterized in that The number of the electrode segments is greater than or equal to 5.

5. The ion trap according to any one of claims 1 to 4, characterized in that: The number of the third cutting lines is the same as that of the first cutting lines.

6. A quantum computing device, comprising the ion trap as claimed in any one of claims 1 to 5.

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