LED display panel and manufacturing method thereof, and LED display device

Abstract

The present invention provides an LED display panel, a manufacturing method thereof, and an LED display device. The LED display panel includes: a substrate; a conductive layer is arranged on one side of the substrate; a first insulating layer is arranged on one side of the bottom substrate and covers the conductive layer; a first gate is arranged on the side of the first insulating layer away from the substrate; a second insulating layer is arranged on the side of the first insulating layer away from the substrate and covers the first gate; an active layer is arranged on the side of the second insulating layer away from the substrate; a third insulating layer is arranged on the side of the second insulating layer away from the substrate and covers the active layer, wherein the first gate is used to shield the interference electric field generated by the conductive layer. The interference electric field generated by the conductive layer can be effectively shielded to ensure uniform brightness display of the LED display panel; the LED display panel can achieve a borderless design.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an LED display panel and a preparation method thereof, and an LED display device. Background Art

[0002] Micro-LED refers to the process of arraying and miniaturizing traditional LEDs and transferring them to a circuit substrate in large quantities to form ultra-small pitch LEDs. The millimeter-level LED length is further miniaturized to the micron level to achieve ultra-high pixels and ultra-high resolution, which can theoretically adapt to screens of various sizes.

[0003] Due to the limitations of LTPS technology and transfer technology, large-size LED display panels need to be spliced ​​together with small screens. The periphery of the display panel, such as the GOA signal line, VDD, VSS and other wiring, needs to occupy the panel frame, resulting in a large gap between the spliced ​​screens, affecting the viewing experience. Therefore, borderless splicing panels are urgently needed to be developed. The current borderless wiring schemes include side wiring and back wiring. In the back wiring scheme, the Fanout will inevitably pass through the LED pixel circuit. In this way, the Fanout's electrical signal will affect the pixel circuit TFT, causing it to be uncontrolled positive or negative biased, which will lead to uneven display brightness.

[0004] Therefore, research on LED display panels needs to be deepened. Summary of the invention

[0005] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. To this end, one object of the present invention is to provide an LED display panel that can achieve a borderless design or can shield the interference electric field generated by the conductive layer to ensure uniform display brightness of the LED display panel.

[0006] In one aspect of the present invention, the present invention provides an LED display panel. According to an embodiment of the present invention, the LED display panel includes: a base substrate; a conductive layer, the conductive layer is arranged on one side of the base substrate; a first insulating layer, the first insulating layer is arranged on one side of the base substrate and covers the conductive layer; a first gate, the first gate is arranged on the side of the first insulating layer away from the base substrate; a second insulating layer, the second insulating layer is arranged on the side of the first insulating layer away from the base substrate and covers the first gate; an active layer, the active layer is arranged on the side of the second insulating layer away from the base substrate, wherein the first gate is used to shield the interference electric field generated by the conductive layer. Therefore, without adding additional capacitors and wiring, the electric field generated by the first gate in the TFT structure of the LED display panel can be used to shield the interference electric field generated by the conductive layer, thereby effectively ensuring that the brightness of the LED display panel is displayed uniformly; moreover, the LED display panel can achieve a borderless design to improve the look and feel of the display device.

[0007] According to an embodiment of the present invention, the LED display panel also includes: a third insulating layer, which is arranged on a side of the second insulating layer away from the substrate and covers the active layer; a second gate, which is arranged on a side of the third insulating layer away from the substrate, and the second gate is electrically connected to the first gate through a first via hole penetrating the second insulating layer and the third insulating layer, wherein in the direction of electron migration in the channel of the active layer, the width of the first gate is greater than the width of the second gate.

[0008] According to an embodiment of the present invention, in the direction of electron migration in the channel of the active layer, the single-side width of the first gate is greater than the single-side width of the second gate.

[0009] According to an embodiment of the present invention, in the direction of electron migration in the channel of the active layer, the difference between the single-side width of the first gate and the single-side width of the second gate is greater than or equal to 1.5 micrometers.

[0010] According to an embodiment of the present invention, in the direction of electron migration in the channel of the active layer, the difference between the single side width of the first gate and the single side width of the second gate is less than or equal to 5 micrometers.

[0011] According to an embodiment of the present invention, the LED display panel further comprises: a first electrode plate and a second electrode plate of a storage capacitor, wherein the first electrode plate is arranged in the same layer as the first gate, and the second electrode plate is arranged in the same layer as the second gate.

[0012] According to an embodiment of the present invention, the LED display panel also includes: a fourth insulating layer, which is arranged on a side of the third insulating layer away from the base substrate and covers the second gate; a source and a drain, which are arranged on a side of the fourth insulating layer away from the base substrate, the drain is electrically connected to the active layer through a second via hole, the source is electrically connected to the active layer through a third via hole, and the source is electrically connected to the conductive layer through a through hole.

[0013] According to an embodiment of the present invention, the LED display panel also includes: a first conductive structure, which is arranged on the same layer as the first gate; and a second conductive structure, which is arranged on the same layer as the second gate, wherein the source is electrically connected to the second conductive structure through a fourth via hole penetrating the fourth insulating layer, the second conductive structure is electrically connected to the first conductive structure through a fifth via hole penetrating the second insulating layer and the third insulating layer, and the first conductive structure is electrically connected to the conductive layer through a sixth via hole penetrating the first insulating layer.

[0014] According to an embodiment of the present invention, the LED display panel also includes: a source and a drain, the source and the drain are arranged on the surface of the second insulating layer away from the base substrate, and are arranged in contact with the active layer; a third conductive structure, the third conductive structure is arranged in the same layer as the first gate, wherein the source is electrically connected to the third conductive structure through an eighth via hole penetrating the second insulating layer, and the third conductive structure is electrically connected to the conductive layer through a ninth via hole penetrating the first insulating layer.

[0015] According to an embodiment of the present invention, the base substrate includes a glass substrate and a flexible substrate, and further includes: a sacrificial layer, which is arranged on a surface of the glass substrate close to the flexible substrate; and a binding pad, which is arranged on a surface of the sacrificial layer away from the glass substrate, wherein the conductive layer is electrically connected to the binding pad through a seventh via.

[0016] In another aspect of the present invention, the present invention provides a method for preparing the LED display panel described above. According to an embodiment of the present invention, the method for preparing an LED display panel includes: forming a conductive layer on one side of the base substrate; forming a first insulating layer on one side of the base substrate, and the first insulating layer covers the conductive layer; forming a first gate on the side of the first insulating layer away from the base substrate; forming a second insulating layer on the side of the first insulating layer away from the base substrate, and the second insulating layer covers the first gate; forming an active layer on the side of the second insulating layer away from the base substrate, wherein the first gate is used to shield the interference electric field generated by the conductive layer. Thus, without adding additional capacitors and wiring, the electric field generated by the first gate in the TFT structure of the LED display panel can be used to shield the interference electric field generated by the conductive layer, thereby effectively ensuring that the brightness of the LED display panel is uniform; moreover, the LED display panel can achieve a borderless design to improve the look and feel of the display device; in addition, the above-mentioned preparation process is mature, the process is simple, and it is convenient for industrial production.

[0017] According to an embodiment of the present invention, the method for manufacturing an LED display panel also includes: forming a third insulating layer on a side of the second insulating layer away from the base substrate, and the third insulating layer covers the active layer; forming a second gate on a side of the third insulating layer away from the base substrate, and the second gate is electrically connected to the first gate through a first via hole penetrating the second insulating layer and the third insulating layer, wherein in the direction of electron migration in the channel of the active layer, the width of the first gate is greater than the width of the second gate.

[0018] In another aspect of the present invention, the present invention provides an LED display device. According to an embodiment of the present invention, the LED display device includes the display panel described above. As a result, the brightness of the LED display device is displayed uniformly, and a borderless design can be achieved. It can be understood by those skilled in the art that the display device has all the features and advantages of the LED display panel described above, and no further elaboration is given here. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0020] Figure 1 is a schematic diagram of the structure of an LED display panel in one embodiment of the present invention;

[0021] Figure 2 is a schematic structural diagram of an LED display panel in another embodiment of the present invention;

[0022] Figure 3is a schematic structural diagram of an LED display panel in another embodiment of the present invention;

[0023] Figure 4 is a plan view of a partial structure of an LED display panel in another embodiment of the present invention;

[0024] Figure 5 It is a plan view of a partial structure of an LED display panel in another embodiment of the present invention. DETAILED DESCRIPTION

[0025] The scheme of the present invention will be explained below in conjunction with embodiments. It will be appreciated by those skilled in the art that the following embodiments are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. Where specific techniques or conditions are not indicated in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are followed.

[0026] In one aspect of the present invention, the present invention provides an LED display panel. According to an embodiment of the present invention, referring to Figure 1 , the LED display panel includes: a base substrate 10; a conductive layer (Fanout) 20, the conductive layer 20 is arranged on one side of the base substrate 10; a first insulating layer 31, the first insulating layer 31 is arranged on one side of the base substrate 10 and covers the conductive layer 20; a first gate 41, the first gate 41 is arranged on the side of the first insulating layer 31 away from the base substrate 10; a second insulating layer 32, the second insulating layer 32 is arranged on the side of the first insulating layer 31 away from the base substrate 10 and covers the first gate 41; an active layer 50, the active layer 50 is arranged on the side of the second insulating layer 32 away from the base substrate 10, wherein the first gate is used to shield the interference electric field generated by the conductive layer. Therefore, without adding additional capacitors and wiring, the electric field generated by the first gate in the TFT structure of the LED display panel can be used to shield the interference electric field generated by the conductive layer, thereby effectively ensuring that the brightness of the LED display panel is uniform; moreover, the LED display panel can achieve a borderless design to improve the look and feel of the display device.

[0027] According to an embodiment of the present invention, the LED display panel has a double-gate structure. Figure 2, the LED display panel further includes: a third insulating layer 33, the third insulating layer 33 is arranged on the side of the second insulating layer 32 away from the substrate 10, and covers the active layer 50; a second gate 42, the second gate 42 is arranged on the side of the third insulating layer 33 away from the substrate 10, and the second gate 42 is electrically connected to the first gate 41 through a first via 323 penetrating the second insulating layer 32 and the third insulating layer 33, wherein in the direction of electron migration in the channel of the active layer 50, the width d1 of the first gate 41 is greater than the width d2 of the second gate 42. Thus, by setting the first gate, and the width of the first gate is greater than the width of the second gate, the first gate and the second gate share the gate potential, and without adding additional capacitors and wiring, the electric field of the TFT itself in the LED display panel can be used to shield the interference electric field generated by the conductive layer, thereby effectively ensuring that the brightness of the LED display panel is displayed uniformly; moreover, the LED display panel can achieve a borderless design, improving the look and feel of the display device.

[0028] It should be noted that the second gate 42 is electrically connected to the first gate 41 through a first via hole 323 penetrating the second insulating layer 32 and the third insulating layer 33, wherein the first via hole 323 does not penetrate the active layer 50. Figure 2 The first via hole 323 is only used to electrically connect the first gate 41 and the second gate 42. In addition, those skilled in the art can understand that the orthographic projections of the first gate and the second gate on the substrate both cover the orthographic projections of the channel region in the active layer on the substrate.

[0029] The conductive layer (Fanout) is a fan-shaped signal line, which may include a part of the GOA signal line, VDD, VSS routing, data line, MUX line, etc. After the above signal lines are bonded on the back of the LED display panel, they will be connected to the display area in the first row of the LED display panel for signal transmission. During the signal transmission process, the electric field in the conductive layer will inevitably affect the pixel circuit. In order to shield the interference electric field generated by the conductive layer 20, a large-area metal layer can also be set between the substrate and the active layer (i.e., the bottom of the pixel circuit, such as the surface of the first insulating layer close to the substrate), and the metal layer is connected to an additional potential, but the inventor unexpectedly discovered that the load of the display panel of this structure increases (equivalent to adding a huge capacitor substrate), resulting in an increased risk of short circuit. Therefore, in the structure of the display panel of the present application, the shielding layer (i.e., the second gate) is streamlined and the load of the display panel can be reduced.

[0030] According to an embodiment of the present invention, referring to Figure 2As shown, in the direction of electron migration in the channel of the active layer 50, the single-side width of the first gate 41 is greater than the single-side width of the second gate 42. As a result, the interference electric field generated by the conductive layer 20 can be effectively shielded to prevent its influence on the pixel circuit TFT. Those skilled in the art can understand that the above-mentioned "single-side width" means that the width of the first gate is not only greater than the width of the second gate, but also that the side edges of the first gate are located on both sides in the width direction of the first gate (or in the direction of electron migration in the channel of the active layer 50) on the outside of the side edge of the second gate (the outside refers to the side away from the channel region in the width direction of the first gate).

[0031] According to an embodiment of the present invention, referring to Figure 2 As shown, in the direction of electron migration in the channel of the active layer, the difference △d (△d=(d1-d2) / 2) between the single-side width of the first gate 41 and the single-side width of the second gate 42 is greater than or equal to 1.5 microns, for example, △d is 1.5 microns, 1.8 microns, 2 microns, 2.3 microns, 2.5 microns, 3 microns, 3.2 microns, 3.5 microns, 3.8 microns, 4.0 microns, 4.5 microns, 4.8 microns or 5 microns. Thus, it can be further ensured that the second gate can effectively shield the interference electric field generated by the conductive layer 20 to avoid its influence on the pixel circuit TFT. Further, those skilled in the art can understand that when the difference △d between the single-side widths on both sides of the first gate and the second gate is equal, △d=(d1-d2) / 2.

[0032] According to an embodiment of the present invention, in the direction of electron migration in the channel of the active layer, the difference Δd between the single side width of the first gate 41 and the single side width of the second gate 42 is less than or equal to 5 micrometers. Thus, parasitic capacitance can be avoided to avoid affecting the electrical signal of the pixel circuit TFT.

[0033] According to an embodiment of the present invention, the first insulating layer may be a buffer layer, the second insulating layer may be a first gate insulating layer, and the third insulating layer may be a second gate insulating layer, wherein there are no special requirements for the materials forming the first insulating layer, the second insulating layer and the third insulating layer, and those skilled in the art may flexibly select them according to actual conditions, for example, they may be silicon nitride, silicon oxide, silicon oxynitride or organic insulating materials, etc.

[0034] According to an embodiment of the present invention, referring to Figure 3The LED display panel further includes: a fourth insulating layer 34, which is disposed on a side of the third insulating layer 33 away from the base substrate 10 and covers the second gate 42; a source electrode 75 and a drain electrode 76, which are disposed on a side of the fourth insulating layer 34 away from the base substrate 10, the drain electrode 76 is electrically connected to the active layer 50 through the second via hole 761, the source electrode 75 is electrically connected to the active layer 50 through the third via hole 751, and the source electrode 75 is electrically connected to the conductive layer 20 through the through hole. The fourth insulating layer may be a passivation layer, and the material forming the fourth insulating layer includes but is not limited to silicon nitride, silicon oxide, silicon oxynitride or an organic insulating material.

[0035] According to an embodiment of the present invention, when the LED display panel is a dual-gate structure, the plan view of the first gate 41, the second gate 42, the source 75, the drain 76 and the active layer 50 can refer to Figure 4 As shown, the first gate 41 and the second gate 42 are electrically connected through the first via hole 232 , from which it can be seen that the first via hole 323 does not penetrate the active layer 50 .

[0036] According to an embodiment of the present invention, referring to Figure 3 , the LED display panel also includes: a first conductive structure 73, the first conductive structure 73 is arranged on the same layer as the first gate 41; a second conductive structure 74, the second conductive structure 74 is arranged on the same layer as the second gate 42, wherein the source 75 is electrically connected to the second conductive structure 74 through a fourth via 752 penetrating the fourth insulating layer 34, the second conductive structure 74 is electrically connected to the first conductive structure 73 through a fifth via 741 penetrating the second insulating layer 32 and the third insulating layer 33, and the first conductive structure 73 is electrically connected to the conductive layer 20 through a sixth via 731 penetrating the first insulating layer 31. Thus, the electrical connection between the source and the conductive layer is achieved through the first conductive structure and the second conductive structure, which can effectively reduce the impedance between the source and the conductive layer. Moreover, since there are a large number of insulating layers between the source and the conductive layer, it is difficult to make the source and the conductive layer directly electrically connected through the through hole during manufacturing. It should be noted that if the display panel also includes a barrier layer 64 arranged on the side of the conductive layer 20 close to the base substrate, the sixth via 731 needs to further penetrate the barrier layer 64, such as Figure 3 shown.

[0037] According to an embodiment of the present invention, referring to Figure 3 The LED display panel further includes: a first electrode plate 71 and a second electrode plate 72 of the storage capacitor, wherein the first electrode plate 71 and the first grid 41 are arranged in the same layer, that is, the first electrode plate 71 and the first grid 41 are manufactured by the same process step, and the second electrode plate 72 and the second grid 42 are arranged in the same layer, that is, the second electrode plate 72 and the second grid 42 are manufactured by the same process step. Thus, the process flow can be simplified.

[0038] According to an embodiment of the present invention, the LED display panel is a single-layer structure, such as Figure 1 As shown, the LED display panel also includes: a source electrode 75 and a drain electrode 76, which are arranged on the surface of the second insulating layer 32 away from the base substrate 10, and are arranged in contact with the active layer 50; a third conductive structure 77, which is arranged in the same layer as the first gate 41, wherein the source electrode 75 is electrically connected to the third conductive structure 77 through an eighth via hole 753 penetrating the second insulating layer 32, and the third conductive structure 77 is electrically connected to the conductive layer 20 through a ninth via hole 771 penetrating the first insulating layer 31. Thus, the electrical connection between the source electrode and the conductive layer is achieved through the third conductive structure, which can effectively reduce the impedance between the source electrode and the conductive layer. Moreover, since there are a large number of insulating layers between the source electrode and the conductive layer, it is difficult to make the source electrode and the conductive layer directly electrically connected through the through hole during manufacturing. It should be noted that if the display panel also includes a barrier layer 64 arranged on the side of the conductive layer 20 close to the base substrate, the ninth via hole 771 needs to further penetrate the barrier layer 64, such as Figure 1 Further, the plan view of the first gate 41, the source 75, the drain 76 and the active layer 50 can be referred to Figure 5 shown.

[0039] Furthermore, when the LED display panel is a single-layer structure, Figure 1 As shown, the first electrode plate 71 of the storage capacitor is still arranged in the same layer as the first gate 41, that is, the first electrode plate 71 and the first gate 41 are manufactured through the same process steps, and the second electrode plate 72 is arranged in the same layer as the source 75 and the drain 76, that is, the second electrode plate 72 and the source 75 and the drain 76 are manufactured through the same process steps.

[0040] According to an embodiment of the present invention, Figure 3 and Figure 1 As shown, the base substrate 10 includes a glass substrate 11 and a flexible substrate 12, and the LED display panel further includes: a sacrificial layer 61, which is arranged on the surface of the glass substrate 11 close to the flexible substrate 12; and a binding pad 62, which is arranged on the surface of the sacrificial layer 61 away from the glass substrate 11, wherein the conductive layer 20 is electrically connected to the binding pad 61 through the seventh via 201. There is no special requirement for the number of binding pads, and those skilled in the art can flexibly design according to actual needs. Figure 1 and Figure 3 Only a schematic diagram of a bonding pad is shown.

[0041] Further, such as Figure 3 and Figure 1As shown, the LED display panel may further include at least one of the following structures: a passivation layer 63, the passivation layer 63 is arranged between the flexible substrate 12 and the conductive layer 20; a barrier layer 64, the barrier layer 64 is arranged on the side of the passivation layer 63 away from the flexible substrate and covers the conductive layer 20; a hole filler 80, the hole filler is filled in the hole in the third insulating layer 33, and its surface is flush with the surface of the third insulating layer 33 away from the flexible substrate.

[0042] According to the embodiments of the present invention, there are no special requirements for the specific material of the active layer, and those skilled in the art can flexibly select according to actual conditions. In some embodiments, the material forming the active layer can be polysilicon or oxides such as IGZO, ZnON, and IZTO. Moreover, the inventors have found that when the material of the active layer is an oxide such as IGZO, ZnON, and IZTO, the first gate can better shield the interference electric field generated by the conductive layer, thereby better improving the uniformity of the display brightness.

[0043] In another aspect of the present invention, the present invention provides a method for preparing the above-mentioned LED display panel. According to an embodiment of the present invention, the method for preparing the LED display panel includes:

[0044] S100 : forming a conductive layer 20 on one side of the base substrate 10 .

[0045] S200: forming a first insulating layer 31 on one side of the base substrate 10 , and the first insulating layer 31 covers the conductive layer 20 ;

[0046] S300: forming a first gate 41 on a side of the first insulating layer 31 away from the base substrate 10;

[0047] S400: forming a second insulating layer 32 on a side of the first insulating layer 31 away from the base substrate 10 , and the second insulating layer 32 covers the first gate 41 ;

[0048] S500: forming an active layer 50 on a side of the second insulating layer 32 away from the base substrate 10, wherein the first gate is used to shield the interference electric field generated by the conductive layer. The structural schematic diagram of the LED display panel prepared by the above method can be referred to Figure 1 .

[0049] According to an embodiment of the present invention, through the above-mentioned S100-S500 manufacturing method steps, without adding additional capacitors and wiring, the electric field generated by the first gate in the TFT structure itself in the LED display panel can be used to shield the interference electric field generated by the conductive layer, thereby effectively ensuring that the brightness of the LED display panel is displayed uniformly; moreover, the LED display panel can achieve a borderless design, thereby improving the look and feel of the display device; in addition, the above-mentioned preparation process is mature, the process is simple, and it is convenient for industrial production.

[0050] According to an embodiment of the present invention, the LED display panel is a single-layer structure, such as Figure 1 As shown, the method for making an LED display panel also includes: forming a source electrode 75 and a drain electrode 76, the source electrode 75 and the drain electrode 76 are formed on the surface of the second insulating layer 32 away from the base substrate 10, and are arranged in contact with the active layer 50; forming a third conductive structure 77, the third conductive structure 77 is arranged in the same layer as the first gate 41, wherein the source electrode 75 is electrically connected to the third conductive structure 77 through an eighth via hole 753 penetrating the second insulating layer 32, and the third conductive structure 77 is electrically connected to the conductive layer 20 through a ninth via hole 771 penetrating the first insulating layer 31. Thus, the electrical connection between the source electrode and the conductive layer is achieved through the third conductive structure, which can effectively reduce the impedance between the source electrode and the conductive layer. Moreover, since there are a large number of insulating layers between the source electrode and the conductive layer, it is difficult to make the source electrode and the conductive layer directly electrically connected through the through hole during manufacturing. It should be noted that if the display panel also includes a barrier layer 64 formed on the side of the conductive layer 20 close to the base substrate, the ninth via hole 771 needs to further penetrate the barrier layer 64, such as Figure 1 Further, the plan view of the first gate 41, the source 75, the drain 76 and the active layer 50 can be referred to Figure 5 shown.

[0051] Furthermore, when the LED display panel is a single-layer structure, Figure 1 As shown, the first electrode plate 71 of the storage capacitor is still arranged in the same layer as the first gate 41, that is, the first electrode plate 71 and the first gate 41 are manufactured through the same process steps, and the second electrode plate 72 is arranged in the same layer as the source 75 and the drain 76, that is, the second electrode plate 72 and the source 75 and the drain 76 are manufactured through the same process steps.

[0052] According to an embodiment of the present invention, the method for manufacturing an LED display panel further includes:

[0053] S600: forming a third insulating layer 33 on a side of the second insulating layer 32 away from the base substrate 10 , and the third insulating layer 33 covers the active layer 50 ;

[0054] S700: A second gate 42 is formed on a side of the third insulating layer 33 away from the base substrate 10, and the second gate 42 is electrically connected to the first gate 41 through a first via hole 323 that penetrates the second insulating layer 32 and the third insulating layer 33, wherein in the direction of electron migration in the channel of the active layer, the width d1 of the first gate 41 is greater than the width d2 of the second gate 42. The structural schematic diagram can be referred to Figure 2 .

[0055] According to an embodiment of the present invention, through the above-mentioned S100-S700 manufacturing method steps, in the above-mentioned preparation method, by setting the first gate, and the width of the first gate is greater than the width of the second gate, the first gate and the second gate share the gate potential, and without adding additional capacitors and wiring, the electric field of the TFT itself in the LED display panel can be used to shield the interference electric field generated by the conductive layer, thereby ensuring that the brightness of the LED display panel is displayed uniformly; moreover, the LED display panel can achieve a borderless design, thereby improving the look and feel of the display device; in addition, the above-mentioned preparation process is mature, the process is simple, and it is convenient for industrial production.

[0056] According to an embodiment of the present invention, referring to Figure 2 As shown, in the direction of electron migration in the channel of the active layer 50, the single side width of the first gate 41 is greater than the single side width of the second gate 42. Thus, the interference electric field generated by the conductive layer 20 can be effectively shielded to prevent it from affecting the pixel circuit TFT. Figure 2 As shown, in the direction of electron migration in the channel of the active layer, the difference △d (△d=(d1-d2) / 2) between the single-side width of the first gate 41 and the single-side width of the second gate 42 is greater than or equal to 1.5 microns, for example, △d is 1.5 microns, 1.8 microns, 2 microns, 2.3 microns, 2.5 microns, 3 microns, 3.2 microns, 3.5 microns, 3.8 microns, 4.0 microns, 4.5 microns, 4.8 microns or 5 microns. Thus, it can be further ensured that the second gate can effectively shield the interference electric field generated by the conductive layer 20 to avoid its influence on the pixel circuit TFT. Further, those skilled in the art can understand that when the difference △d between the single-side widths on both sides of the first gate and the second gate is equal, △d=(d1-d2) / 2. In some embodiments, in the direction of electron migration in the channel of the active layer, the difference △d between the single-side width of the first gate 41 and the single-side width of the second gate 42 is less than or equal to 5 microns. Thus, parasitic capacitance can be avoided to avoid affecting the electrical signal of the TFT of the pixel circuit.

[0057] According to an embodiment of the present invention, the method for manufacturing an LED display panel further includes: forming a first electrode plate 71 and a second electrode plate 72 of a storage capacitor, wherein the first electrode plate 71 and the first grid 41 are formed by the same process step, and the second electrode plate 72 and the second grid 42 are formed by the same process step. The structural schematic diagram can be referred to Figure 3 Therefore, the first electrode plate 71 can be manufactured through the same process steps as the first grid electrode, thus simplifying the process flow.

[0058] According to an embodiment of the present invention, the method for manufacturing an LED display panel further includes: forming a fourth insulating layer 34, the fourth insulating layer 34 is formed on a side of the third insulating layer 33 away from the base substrate 10, and covers the second gate 42; forming a source 75 and a drain 76, the source 75 and the drain 76 are formed on a side of the fourth insulating layer 34 away from the base substrate 10, the drain 76 is electrically connected to the active layer 50 through the second via 761, the source 75 is electrically connected to the active layer 50 through the third via 751, and the source 75 is electrically connected to the conductive layer 20 through the through hole. The structural schematic diagram can be referred to Figure 3 The fourth insulating layer may be a passivation layer, and the material forming the fourth insulating layer includes but is not limited to silicon nitride, silicon oxide, silicon oxynitride or an organic insulating material.

[0059] According to an embodiment of the present invention, the method for manufacturing an LED display panel also includes: forming a first conductive structure 73, the first conductive structure 73 and the first gate 41 are formed by the same process step; forming a second conductive structure 74, the second conductive structure 74 and the second gate 42 are formed by the same process step, wherein the source 75 is electrically connected to the second conductive structure 74 through a fourth via 752 penetrating the fourth insulating layer 34, the second conductive structure 74 is electrically connected to the first conductive structure 73 through a fifth via 741 penetrating the second insulating layer 32 and the third insulating layer 33, and the first conductive structure 73 is electrically connected to the conductive layer 20 through a sixth via 731 penetrating the first insulating layer 31. The structural schematic diagram can be referred to Figure 3 Therefore, the electrical connection between the source electrode and the conductive layer is realized through the first conductive structure and the second conductive structure, which can effectively reduce the impedance between the source electrode and the conductive layer. Moreover, since there are a large number of insulating layers between the source electrode and the conductive layer, it is difficult to realize electrical connection between the source electrode and the conductive layer directly through the through hole during manufacturing.

[0060] According to an embodiment of the present invention, Figure 3 and Figure 1 As shown, the base substrate 10 includes a glass substrate 11 and a flexible substrate 12, and the method for manufacturing an LED display panel further includes: forming a sacrificial layer 61, the sacrificial layer 61 is formed on the surface of the glass substrate 11 close to the flexible substrate 12; forming a binding pad 62, the binding pad 62 is formed on the surface of the sacrificial layer 61 away from the glass substrate 11, wherein the conductive layer 20 is electrically connected to the binding pad 61 through the seventh via 201. There is no special requirement for the number of binding pads, and those skilled in the art can flexibly design according to actual needs. Figure 1 and Figure 3 Only a schematic diagram of a bonding pad is shown.

[0061] In another aspect of the present invention, the present invention provides an LED display device. According to an embodiment of the present invention, the LED display device includes the display panel described above. As a result, the brightness of the LED display device is displayed uniformly, and a borderless design can be achieved. It can be understood by those skilled in the art that the display device has all the features and advantages of the LED display panel described above, and no further elaboration is given here.

[0062] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0063] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. An LED display panel, characterized in that: include: substrate substrate; A conductive layer, wherein the conductive layer is disposed on one side of the substrate; A first insulating layer, wherein the first insulating layer is disposed on one side of the base substrate and covers the conductive layer; A first gate, the first gate being arranged on a side of the first insulating layer away from the substrate; a second insulating layer, the second insulating layer being disposed on a side of the first insulating layer away from the base substrate and covering the first gate; an active layer, wherein the active layer is arranged on a side of the second insulating layer away from the base substrate, Wherein, the first gate is used to shield the interference electric field generated by the conductive layer; a third insulating layer, the third insulating layer being disposed on a side of the second insulating layer away from the substrate and covering the active layer; a second gate, the second gate being arranged on a side of the third insulating layer away from the base substrate, and the second gate being electrically connected to the first gate through a first via hole penetrating the second insulating layer and the third insulating layer, Wherein, in the direction of electron migration in the channel of the active layer, the width of the first gate is greater than the width of the second gate.

2. The LED display panel according to claim 1, characterized in that: In the direction of electron migration in the channel of the active layer, a single-side width of the first gate is greater than a single-side width of the second gate.

3. The LED display panel according to claim 2, characterized in that: In the direction of electron migration in the channel of the active layer, a difference between a single side width of the first gate and a single side width of the second gate is greater than or equal to 1.5 micrometers.

4. The LED display panel according to claim 3, characterized in that: In the direction of electron migration in the channel of the active layer, a difference between a single side width of the first gate and a single side width of the second gate is less than or equal to 5 micrometers.

5. The LED display panel according to any one of claims 1 to 4, characterized in that: It also includes: a first electrode plate and a second electrode plate of the storage capacitor, wherein the first electrode plate is arranged in the same layer as the first grid, and the second electrode plate is arranged in the same layer as the second grid.

6. The LED display panel according to any one of claims 1 to 4, characterized in that: Also includes: a fourth insulating layer, the fourth insulating layer being disposed on a side of the third insulating layer away from the base substrate and covering the second gate; A source and a drain, wherein the source and the drain are arranged on a side of the fourth insulating layer away from the base substrate, the drain is electrically connected to the active layer through a second via hole, the source is electrically connected to the active layer through a third via hole, and the source is electrically connected to the conductive layer through a through hole.

7. The LED display panel according to claim 6, characterized in that: Also includes: A first conductive structure, wherein the first conductive structure and the first gate are disposed in the same layer; A second conductive structure, wherein the second conductive structure and the second gate are arranged in the same layer, wherein: The source is electrically connected to the second conductive structure through a fourth via penetrating the fourth insulating layer, the second conductive structure is electrically connected to the first conductive structure through a fifth via penetrating the second insulating layer and the third insulating layer, and the first conductive structure is electrically connected to the conductive layer through a sixth via penetrating the first insulating layer.

8. The LED display panel according to claim 1, characterized in that: Also includes: A source electrode and a drain electrode, wherein the source electrode and the drain electrode are arranged on a surface of the second insulating layer away from the base substrate and are arranged in contact with the active layer; A third conductive structure is provided in the same layer as the first gate, wherein the source is electrically connected to the third conductive structure through an eighth via hole penetrating the second insulating layer, and the third conductive structure is electrically connected to the conductive layer through a ninth via hole penetrating the first insulating layer.

9. The LED display panel according to claim 1 or 8, characterized in that: The substrate includes a glass substrate and a flexible substrate, and further includes: A sacrificial layer, the sacrificial layer being disposed on a surface of the glass substrate close to the flexible substrate; A binding pad is provided on a surface of the sacrificial layer away from the glass substrate, wherein the conductive layer is electrically connected to the binding pad through a seventh via hole.

10. A method for preparing the LED display panel according to any one of claims 1 to 9, characterized in that: include: forming a conductive layer on one side of the substrate; Forming a first insulating layer on one side of the base substrate, wherein the first insulating layer covers the conductive layer; forming a first gate on a side of the first insulating layer away from the base substrate; forming a second insulating layer on a side of the first insulating layer away from the base substrate, wherein the second insulating layer covers the first gate; forming an active layer on a side of the second insulating layer away from the base substrate; A third insulating layer is formed on a side of the second insulating layer away from the base substrate, and the third insulating layer covers the active layer. Wherein, the first gate is used to shield the interference electric field generated by the conductive layer; A second gate is formed on a side of the third insulating layer away from the base substrate, and the second gate is electrically connected to the first gate through a first via hole penetrating the second insulating layer and the third insulating layer. Wherein, in the direction of electron migration in the channel of the active layer, the width of the first gate is greater than the width of the second gate.

11. An LED display device, characterized in that: A display panel comprising any one of claims 1 to 9.

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