Apparatus for processing a substrate

Abstract

A substrate processing apparatus includes a processing container having an internal space, a support unit having a support plate configured to support and rotate a substrate in the internal space, a liquid supply unit configured to supply a processing liquid to the substrate supported by the support unit, and an exhaust unit configured to exhaust a gas flow in the internal space, wherein the processing container includes a bottom wall and a side wall extending from an outer end of the bottom wall, and the processing container includes a first gas-liquid separation plate disposed at the side wall.

Description

Cross-references to related applications

[0001] Priority is claimed under 35 USC § 119 for Korean Patent Application No. 10-2020-0157844, filed on November 23, 2020, with the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety. Technical Field

[0002] The embodiments of the inventive concept described herein relate to an apparatus for processing a substrate, and more specifically, to an apparatus for processing a substrate by supplying liquid onto a rotating substrate. Background Technology

[0003] Various processes, such as photolithography, etching, ashing, thin film deposition, and cleaning, are performed to manufacture semiconductor devices or flat panel display panels. Among these processes, photolithography includes supplying photoresist to a semiconductor substrate to form a photoresist film on the substrate surface, exposing the photoresist film using a photomask, and then supplying a developer to selectively remove portions of the photoresist film. These processes are carried out in a processing chamber.

[0004] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus 1 used to apply photoresist onto a substrate. (Reference) Figure 1 The substrate processing apparatus 1 includes a processing container 10 having an internal space, a support unit 20 for supporting a substrate W within the internal space, and a nozzle 30 for supplying processing liquid 82 to the substrate W placed on the support unit 20. The processing container 10 has an outer cup 12 and an inner cup 14. Furthermore, a fan filter unit (not shown) for supplying downward airflow into the internal space is provided above the processing container 10, and a drain pipe 60 for discharging processing liquid and an exhaust pipe 70 for discharging atmosphere are connected to the bottom region of the internal space.

[0005] When have Figure 1 When the substrate processing apparatus 1 with the structure shown processes the substrate W by simultaneously supplying processing liquid 82 to the rotating substrate W, the airflow 84 on the surface of the substrate W flows from the center to the edge of the substrate W along the rotation direction of the substrate W under the action of centrifugal force. Figure 2 As shown. Afterwards, as... Figure 3 As shown, the airflow 84 flows downwards after colliding with the outer cup 12 and is discharged from the internal space to the outside through the exhaust pipe 70. As the direction of the airflow 84 changes from horizontal to vertical, the airflow 84 collides with the outer cup 12, generating a vortex at the point of collision. At the point where the vortex is generated, the airflow 84 stagnates, thus preventing smooth discharge from the internal space. This problem is further exacerbated as the rotational speed of the substrate W increases.

[0006] When a film of the processing liquid 82 is formed on the substrate W, eddies and stagnant airflow at the collision point impede airflow above the edge region of the substrate W. Therefore, the film thickness on the edge region of the substrate W is greater than the film thickness on the central region of the substrate W. Furthermore, due to the eddies at the collision point, contaminants such as fumes flow back onto the substrate W, thus contaminating it. Summary of the Invention

[0007] The present invention provides a substrate processing apparatus for improving the efficiency of substrate processing.

[0008] An embodiment of the present invention provides a substrate processing apparatus for smoothly discharging airflow in a processing space while processing a substrate by supplying a processing liquid to a rotating substrate in a processing space.

[0009] An embodiment of the present invention provides a substrate processing apparatus for forming a liquid film of uniform thickness over a whole area of ​​a substrate by supplying a processing liquid onto a rotating substrate.

[0010] Embodiments of the present invention provide a substrate processing apparatus for preventing contaminants from re-adsorbing onto a substrate when processing the substrate by supplying a processing liquid onto a rotating substrate.

[0011] The technical problems to be solved by the present invention are not limited to those described above. Those skilled in the art will clearly understand from the following description any other technical problems not mentioned herein.

[0012] An embodiment of the present invention provides a substrate processing apparatus.

[0013] The apparatus includes: a processing container having an internal space; a support unit having a support plate configured to support and rotate a substrate in the internal space; a liquid supply unit configured to supply processing liquid to the substrate supported by the support unit; and an exhaust unit configured to exhaust airflow from the internal space, wherein the processing container includes a bottom wall and a side wall extending from the outer end of the bottom wall, and the processing container includes a first gas-liquid separation plate disposed at the side wall.

[0014] In one embodiment, the first gas-liquid separation plate includes a first portion extending from the sidewall and inclined upward toward the rotational axis of the support unit, and a second portion extending upward from the top of the first portion.

[0015] In one embodiment, the first gas-liquid separation plate includes a drain hole formed in the first portion, and the drain hole is positioned closer to the sidewall of the processing container than to the second portion.

[0016] In one embodiment, the processing container further includes a second gas-liquid separation plate disposed on the bottom wall.

[0017] In one embodiment, the second gas-liquid separation plate is placed below and separated from the first portion of the first gas-liquid separation plate.

[0018] In one embodiment, the interior space includes a discharge space formed between the outer regions of the first gas-liquid separation plate and the second gas-liquid separation plate, and an exhaust space formed between the inner regions of the first gas-liquid separation plate and the second gas-liquid separation plate, wherein the exhaust unit discharges the airflow introduced into the exhaust space to the outside of the interior space.

[0019] In one embodiment, the airflow introduced into the exhaust space is introduced into the exhaust space through a second gas-liquid separator.

[0020] In one embodiment, the support unit includes a rotatable support plate on which a substrate is placed, and a second portion of the first gas-liquid separation plate is positioned at a lower position than the support plate.

[0021] In one embodiment, the airflow guide pipe is configured to introduce airflow in the tangential direction of rotation of the substrate supported by the support unit.

[0022] In one embodiment, the airflow guide pipe is located within the internal space of the processing container.

[0023] In one embodiment, an airflow guide pipe is disposed between the second gas-liquid separation plate and the inner wall of the processing container.

[0024] In one embodiment, the airflow guide pipe is configured such that its length direction is vertical, and the airflow guide pipe includes a top wall and a side wall. The top wall serves as a blocking surface, and the inlet formed at the side wall faces a direction parallel to the tangent of the substrate supported by the support unit. The remaining portion of the wall serves as a blocking surface.

[0025] In one embodiment, multiple airflow guide tubes are placed separately along the circumferential direction of the substrate.

[0026] In one embodiment, the device may further include: a fan unit that supplies downward airflow to the interior space; and a processing liquid nozzle that supplies processing liquid to a substrate supported by a support unit.

[0027] An embodiment of the present invention provides another substrate processing apparatus.

[0028] The apparatus includes: a processing container having an internal space; a support unit having a support plate configured to support and rotate a substrate within the internal space; a liquid supply unit supplying processing liquid to the substrate supported by the support unit; and an exhaust unit exhausting airflow from the internal space, wherein the processing container includes: an outer cup providing the internal space; an inner cup placed separately from the outer cup and within the internal space; a first gas-liquid separation plate disposed on a side wall of the outer cup; and a second gas-liquid separation plate disposed on a bottom wall of the outer cup.

[0029] In one embodiment, the first gas-liquid separation plate includes: a first portion extending upwardly at an angle from the sidewall of the outer cup along the direction of rotation of the support unit; and a second portion extending upwardly from the top of the first portion.

[0030] In one embodiment, the inner cup includes: an inner wall configured to surround a support unit; an outer wall configured to surround the inner wall; and a top wall connecting the top of the inner wall and the top of the outer wall, wherein the outer wall of the inner cup is placed separately from a second portion of the first gas-liquid separation plate.

[0031] In one embodiment, the exhaust unit further includes an airflow guide tube disposed between the inner cup and the outer cup and configured to introduce airflow in a tangential direction to the rotational direction of the substrate supported by the support unit.

[0032] In one embodiment, the second gas-liquid separation plate is disposed below the first portion of the first gas-liquid separation plate and is placed separately from the first portion. The internal space includes an exhaust space formed between the outer regions of the first and second gas-liquid separation plates and an exhaust space formed between the inner regions of the first and second gas-liquid separation plates. The exhaust unit discharges the airflow introduced into the exhaust region to the outside of the internal space.

[0033] An embodiment of the present invention provides another substrate processing apparatus.

[0034] The apparatus includes: a processing container having an internal space; a support unit having a support plate configured to support and rotate a substrate within the internal space; a liquid supply unit supplying processing liquid to the substrate supported by the support unit; and an exhaust unit exhausting airflow from the internal space. The processing container includes: an outer cup providing the internal space; and an inner cup placed separately from the outer cup within the internal space. The processing container also includes: a first gas-liquid separation plate disposed on a side wall of the outer cup; and a second gas-liquid separation plate disposed on a bottom wall of the outer cup. The exhaust unit includes an airflow guide pipe disposed between the inner and outer cups, the airflow guide pipe introducing airflow in a tangential direction to the rotational direction of the substrate supported by the support unit.

[0035] According to the present invention, a processing liquid is supplied to a substrate rotating in the internal space of a processing container so as to smoothly discharge the airflow in the internal space during the processing of the substrate.

[0036] According to some embodiments of the present invention, when a processing liquid is supplied to a rotating substrate to form a liquid film on the substrate, the thickness of the liquid film can be uniformly formed over the entire area of ​​the substrate.

[0037] According to the present invention, when a substrate is processed by supplying a processing liquid to a rotating substrate, contaminants can be prevented from re-adhering to the substrate.

[0038] The effects of this invention are not limited to those described above; those skilled in the art will clearly understand any effects not mentioned based on this specification and the accompanying drawings. Attached Figure Description

[0039] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals in the various drawings refer to the same parts, and wherein:

[0040] Figure 1 This is a cross-sectional view showing a substrate processing apparatus having an overall structure that performs liquid processing on a substrate while rotating it.

[0041] Figure 2 It is shown Figure 1 A plan view of the airflow direction on the substrate surface in a substrate processing apparatus.

[0042] Figure 3 It is shown Figure 1 A cross-sectional view of the airflow in the substrate processing apparatus;

[0043] Figure 4 This is a schematic perspective view illustrating a substrate processing apparatus according to an embodiment of the concept of the present invention;

[0044] Figure 5 It is shown Figure 4 A cross-sectional view of the substrate processing apparatus for the coating block and the developing block;

[0045] Figure 6 yes Figure 1 A plan view of the substrate processing apparatus;

[0046] Figure 7 It is shown Figure 6 A schematic plan view of the conveying robot arm;

[0047] Figure 8 It is shown Figure 6 A schematic floor plan of an example heat treatment chamber;

[0048] Figure 9 yes Figure 6 Front view of the heat treatment chamber;

[0049] Figure 10 This is a schematic cross-sectional view showing the structure of a substrate processing apparatus for processing a substrate by supplying liquid to a rotating substrate according to a first embodiment of the present invention.

[0050] Figure 11 yes Figure 10 A three-dimensional cross-sectional view of the substrate processing device;

[0051] Figure 12 It shows when passing Figure 10 A cross-sectional view of the flow path of the airflow and the processing liquid when the device performs liquid processing on the substrate.

[0052] Figure 13 This is a schematic cross-sectional view showing the structure of a substrate processing apparatus that processes a substrate by supplying liquid to a rotating substrate according to a second embodiment of the present invention.

[0053] Figure 14 yes Figure 13 A partial perspective view of the device;

[0054] Figure 15 It shows when passing Figure 13 A cross-sectional view of the flow path of the airflow and the processing liquid when the device performs liquid processing on the substrate.

[0055] Figure 16 This is a cross-sectional view showing the structure of a substrate processing apparatus for processing a substrate by supplying liquid to a rotating substrate according to a third embodiment of the present invention.

[0056] Figure 17 This is a cross-sectional view showing the structure of a substrate processing apparatus according to a fourth embodiment of the present invention for processing a substrate by supplying liquid to a rotating substrate. Detailed Implementation

[0057] The inventive concept can be modified in various ways and can take many forms, and its specific embodiments will be shown and described in detail in the accompanying drawings. However, the embodiments according to the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies may be exaggerated or omitted where such detailed descriptions may obscure the essence of the inventive concept.

[0058] The apparatus of this embodiment can be used to perform photolithography processes on a circular substrate. Specifically, the apparatus of this embodiment can be connected to an exposure apparatus and can be used to perform coating and developing processes on the substrate. However, the spirit and scope of the inventive concept are not limited thereto, and the apparatus can be used to perform various types of processes involving supplying processing liquid to the substrate while rotating it. In the following description, the use of a wafer as the substrate will be illustrated by example.

[0059] In the following text, reference will be made to Figures 4 to 17 An embodiment of the present invention is shown.

[0060] Figure 4 A substrate processing apparatus according to an embodiment of the present invention is shown. Figure 5 It shows Figure 4 A substrate processing apparatus for coating blocks and developing blocks, and Figure 6 It shows Figure 4 Substrate processing apparatus.

[0061] refer to Figures 4 to 6 According to an embodiment of the present invention, a substrate processing apparatus 10 includes a transposition module 100, a processing module 300, and an interface module 500. According to one embodiment, the transposition module 100, the processing module 300, and the interface module 500 are arranged in a row. Hereinafter, the arrangement direction of the transposition module 100, the processing module 300, and the interface module 500 will be referred to as a first direction 12, the direction perpendicular to the first direction when viewed from above will be referred to as a second direction 14, and the direction perpendicular to both the first direction 12 and the second direction 14 will be referred to as a third direction 16.

[0062] The transposition module 100 transfers the substrate W from the container F containing the substrate W to the processing module 300, and retrieves the processed substrate W from the processing module 300 and stores it in the container F. The transposition module 100 is configured to extend its length along a second direction 14. The transposition module 100 has a loading port 110 and a transposition frame 130. The transposition frame 130 is positioned between the loading port 110 and the processing module 300. The container F containing the substrate W is positioned at the loading port 110. Multiple loading ports 110 can be provided, and multiple loading ports 110 can be positioned along the second direction 14.

[0063] For container F, a closed container F such as a front-opening unified pod (FOUP) can be used. Container F can be placed on loading port 110 by a conveying device (not shown) such as an overhead conveyor, overhead conveyor or automated guided vehicle, or container F can be placed on loading port 110 by an operator.

[0064] A rotary manipulator 132 is disposed inside a rotary frame 130. Within the rotary frame 130, a guide rail 136 extends along a second direction 14, and the rotary manipulator 132 is configured to move 136 along the guide rail. The rotary manipulator 132 includes a hand on which a substrate W is placed, and the hand is configured to move forward and backward, rotatable about a third direction 16, and movable along the third direction 16.

[0065] The processing module 300 can perform coating and developing processes on the substrate W. The processing module 300 can receive the substrate W stored in the container F and perform substrate processing processes. The processing module 300 has coating blocks 300a and developing blocks 300b. The coating blocks 300a perform the coating process on the substrate W, and the developing blocks 300b perform the developing process on the substrate W. Multiple coating blocks 300a are provided, and the multiple coating blocks 300a are stacked on top of each other. Multiple developing blocks 300b are provided, and the multiple developing blocks 300b are stacked on top of each other. Figure 4 In one embodiment, two coating blocks 300a and two developing blocks 300b are provided. The coating blocks 300a may be positioned below the developing blocks 300b. In one embodiment, the two coating blocks 300a perform the same process and may have the same structural arrangement. Similarly, the two developing blocks 300b perform the same process and may have the same structural arrangement.

[0066] refer to Figure 6 The coating block 300a includes a heat treatment chamber 320, a transfer chamber 350, a liquid treatment chamber 360, and buffer chambers 312 and 316. The heat treatment chamber 320 may be a cavity for performing heat treatment processes on the substrate W. The heat treatment processes may include cooling and heating processes. The liquid treatment chamber 360 supplies liquid onto the substrate W to form a liquid layer. The liquid layer may be a photoresist film or an anti-reflective film. The transfer chamber 350 transfers the substrate W between the heat treatment chamber 320 and the liquid treatment chamber 360 in the coating block 300a.

[0067] The transfer chamber 350 is configured such that its length direction is parallel to the vertical direction. A transfer robot 352 is disposed in the transfer chamber 350. The transfer robot 352 transfers substrates in the heat treatment chamber 320, the liquid treatment chamber 360, and the buffer chambers 312 and 316. In one embodiment, the transfer robot 352 has a hand on which the substrate W is placed, and the hand may be configured to be movable forward and backward, rotatable about a third direction 16 as an axis, and movable along the third direction 16. A guide rail 356 is disposed in the transfer chamber 350 such that its length direction is parallel to the first direction, and the transfer robot 352 may be configured to be movable on the guide rail 356.

[0068] Figure 7 An example of the hand of a transfer robot is shown. (Reference) Figure 7 The hand portion 352 has a base 352a and a support protrusion 352b. The base 352a may have an annular shape, wherein a portion of its circumference is curved. The inner diameter of the base 352a is larger than the diameter of the substrate W. The support protrusion 352b extends inward from the base 352a. A plurality of support protrusions 352b are provided and support the edge region of the substrate W. According to one embodiment, four support protrusions 352b may be provided as equally spaced portions.

[0069] Multiple heat treatment chambers 320 are provided. The heat treatment chambers 320 are arranged along the first direction 12. The heat treatment chambers 320 are placed on one side of the transfer chamber 350.

[0070] Figure 8 It shows Figure 6 The heat treatment chamber, and Figure 9 An embodiment of the invention is shown. Figure 8 The heat treatment chamber.

[0071] refer to Figure 8 and Figure 9 The heat treatment chamber 320 includes an outer shell 321, a cooling unit 322, a heating unit 323, and a conveyor plate 324.

[0072] The outer casing 321 is configured in a generally cuboid shape. An entrance (not shown) is provided on the side wall of the outer casing 321, through which the substrate W enters and exits. The entrance can remain open. Optionally, a door (not shown) can be provided to open and close the entrance. A cooling unit 322, a heating unit 323, and a conveyor plate 324 are disposed within the casing 321. The cooling unit 322 and the heating unit 323 are arranged side by side along the second direction 14. In one embodiment, the cooling unit 320 may be placed closer to the conveyor chamber 350 than the heating unit 323.

[0073] The cooling unit 322 has a cooling plate 322a. When viewed from above, the cooling plate 322a may have a generally circular shape. The cooling plate 322a is provided with a cooling member 322b. In one embodiment, the cooling member 322b is formed inside the cooling plate 322a and may be configured as a channel through which cooling fluid flows.

[0074] The heating unit 323 includes a heating plate 323a, a cover 323c, and a heater 323b. When viewed from above, the heating plate 323a has a generally circular shape. The heating plate 323a has a diameter larger than that of the substrate W. The heating plate 323a is equipped with the heater 323b. The heater 323b can be implemented using a resistance heating element to which current is applied. The heating plate 323a is provided with lifting pins 323e that can move vertically along a third direction 16. The lifting pins 323e receive the substrate W from a conveying device outside the heating unit 323 and place the substrate W downwards onto the heating plate 323a, or lift the substrate W away from the heating plate 323a and convey the substrate W to the conveying device outside the heating unit 323. In one embodiment, three lifting pins 323e may be provided. The cover 323c has a space therein, which is open at the bottom. The cover 323c is located above the heating plate 323a and is moved vertically by a driver 323d. The space formed by moving the cover 323c together with the heating plate 323a serves as the heating space for the heating substrate W.

[0075] The transfer plate 324 has a generally circular shape and a diameter corresponding to the diameter of the substrate W. Notches 324b are formed at the edge of the transfer plate 324. The notches 324b may have a shape corresponding to the protrusions 352b formed on the hand 354 of the transfer robot 352. Furthermore, as many notches 324b as protrusions 352b are formed at positions corresponding to the protrusions 352b. When the vertical alignment of the hand 354 and the transfer plate 324 is changed in the vertical direction, the substrate W is transferred between the hand 354 and the transfer plate 324. The transfer plate 324 can be mounted on a guide rail 324d and is movable along the guide rail 324d by a driver 324c. A plurality of slit-shaped guide grooves 324a are provided in the transfer plate 324. The guide grooves 324a extend inward from the edge of the transfer plate 324 into the interior of the transfer plate 324. The guide groove 324a extends along the second direction 14, and the guide grooves 3242 are positioned spaced apart from each other along the second direction 14. When the substrate W is transferred between the transfer plate 324 and the heating unit 323, the guide groove 324a prevents the transfer plate 324 and the lifting pin 323e from interfering with each other.

[0076] The substrate W is cooled while in contact with the cooling plate 322a via a transfer plate 324 on which it is placed. To facilitate effective heat transfer between the cooling plate 322a and the substrate W, the transfer plate 324 is formed of a material with high thermal conductivity. In one embodiment, the transfer plate 324 may be formed of a metallic material.

[0077] Heating units 323, disposed in some heat treatment chambers 320, can supply gas while heating the substrate W to improve the adhesion of photoresist to the substrate W. In one embodiment, the gas may be hexamethylsilane (HMDS) gas.

[0078] Multiple liquid handling chambers 360 are provided. Some liquid handling chambers 360 can be stacked on top of each other. Liquid handling chambers 360 are located on one side of transfer chamber 350. Liquid handling chambers 360 are arranged side by side along a first direction 12. Some liquid handling chambers 360 are located near the indexing module 100. Hereinafter, these liquid handling chambers 360 are referred to as front liquid handling chambers 362. Some other liquid handling chambers 360 are located near interface module 500. Hereinafter, these liquid handling chambers 360 are referred to as rear liquid handling chambers 364.

[0079] Each pre-liquid processing chamber 362 applies a first liquid to the substrate W, and each post-liquid processing chamber 364 applies a second liquid to the substrate W. The first liquid and the second liquid can be different types of liquids. In one embodiment, the first liquid can be a liquid used to form an anti-reflective layer, and the second liquid can be a liquid used to form a photoresist layer. The photoresist liquid can be applied to the substrate W coated with an anti-reflective film. Alternatively, the first liquid can be a photoresist liquid, and the second liquid can be a liquid used to form an anti-reflective layer. In this case, the liquid used to form the anti-reflective layer can be applied to the substrate W coated with a photoresist layer. Alternatively, the first liquid and the second liquid can be the same liquid, and both the first liquid and the second liquid can be liquids used to form photoresist layers.

[0080] The developing block 300b has the same structure as the coating block 300a, and the liquid handling chamber provided to the developing block 300b supplies developing solution to the substrate W.

[0081] Interface module 500 connects processing module 300 to external exposure device 700. Interface module 500 has interface frame 510, additional processing chamber 520, interface buffer 530 and interface robot 550.

[0082] A fan filter unit that forms a downward airflow can be disposed at the top of the interface frame 510. An additional processing chamber 520, an interface buffer 530, and an interface robot 550 are disposed within the interface frame 510. The additional processing chamber 520 can perform predetermined additional processing before the substrate W processed in the coating block 300a is transferred to the exposure apparatus 700. Optionally, the additional processing chamber 520 can perform predetermined additional processing before the substrate W processed in the developing block 300b is transferred to the exposure apparatus 700. In one embodiment, the additional processing can be an edge exposure process that exposes the edge region of the substrate W, a top-side cleaning process that cleans the top side of the substrate W, or a back-side cleaning process that cleans the back side of the substrate W. Multiple additional processing chambers 520 can be provided, and the additional processing chambers 520 can be stacked on top of each other. All additional processing chambers 520 can be provided to perform the same processing. Optionally, some additional processing chambers 520 can be configured to perform different processing.

[0083] Interface buffer 530 provides space in which the substrate W transferred between coating block 300a, additional processing chamber 520, exposure apparatus 700 and developing block 300b is temporarily held during transfer. Multiple interface buffers 530 can be provided, and multiple interface buffers 530 can be stacked on top of each other.

[0084] In one embodiment, the additional processing chamber 520 may be located on one side of the extension line facing the transmission chamber 350 along its length, and the interface buffer 530 may be located on the opposite side of the extension line.

[0085] An interface robot 550 transfers a substrate W between a coating block 300a, an additional processing chamber 520, an exposure apparatus 700, and a developing block 300b. The interface robot 550 may have a transfer hand for transferring the substrate W. One or more interface robots 550 may be provided. In one embodiment, the interface robot 550 has a first robot 552 and a second robot 554. The first robot 552 may be provided to transfer the substrate W between the coating block 300a, the additional processing chamber 520, and the interface buffer 530, and the second robot 554 may transfer the substrate W between the interface buffer 530 and the exposure apparatus 700, and may also transfer the substrate W between the interface buffer 530 and the developing block 300b.

[0086] The first robotic arm 552 and the second robotic arm 554 each include a transfer hand on which a substrate W is placed, and the hand can be configured to be movable forward and backward, rotatable relative to an axis parallel to a third direction 16, and movable along the third direction 16.

[0087] The structure of the substrate processing apparatus of the present invention for processing a substrate by supplying a processing liquid to a rotating substrate will be described in detail below. An example of the substrate processing apparatus is an apparatus for applying photoresist. However, the substrate processing apparatus can also be an apparatus for forming a film, such as a protective film or an anti-reflective film, on a rotating substrate W. Alternatively, the substrate processing apparatus can be an apparatus for supplying a processing liquid 82, such as a developer, to the substrate W.

[0088] Figure 10 An embodiment of a substrate processing apparatus is shown, which processes a substrate by supplying a processing liquid onto a rotating substrate. Figure 11 It shows Figure 10 Substrate processing apparatus.

[0089] refer to Figure 10 and Figure 11The substrate processing apparatus includes a housing 1100, a processing container 1200, a support unit 1400, a liquid supply unit 1600, and an exhaust unit 1900.

[0090] The housing 1100 can be configured as a rectangular container shape with an internal space 1120. An opening 1102 can be formed in the side wall of the housing 1100. The opening 1102 can serve as an inlet / outlet for the substrate W to enter or exit the housing 1100. A door (not shown) can be provided on the side wall of the housing 1100 to open or close the opening 1102.

[0091] The processing container 1200 can be disposed within the internal space 1120 of the housing 1100. The processing container 1200 has an internal space 1280. The internal space 1280 has an opening at the top.

[0092] A support unit 1400 supports a substrate W within the internal space 1280 of a processing container 1200. The support unit 1400 includes a support plate 1420, a rotating shaft 1440, and a driver 1460. The support plate 1420 has a circular top surface. The support plate 1420 has a diameter smaller than that of the substrate W. The support plate 1420 supports the substrate W under vacuum pressure. Optionally, the support plate 1420 may have a mechanical clamping structure for supporting the substrate W. The rotating shaft 1440 is coupled to the center of the bottom surface of the support plate 1420, and the driver 1460, which provides torque to the rotating shaft 1440, is coupled to the rotating shaft 1440. The driver 1460 may be a motor.

[0093] Liquid supply unit 1600 supplies processing liquid 82 to substrate W. Processing liquid 82 may be a coating solution such as photoresist. Liquid supply unit 1600 has a nozzle 1620, a nozzle moving member 1640, and a liquid supply source (not shown). Nozzle 1620 may include one or more nozzles. Nozzle 1620 supplies processing liquid 82 to substrate W. Nozzle 1620 is supported on nozzle moving member 1640. Nozzle moving member 1640 moves nozzle 1620 between a processing position and a standby position. In the processing position, nozzle 1620 supplies processing liquid 82 to substrate W placed on support plate 1420. After the processing liquid 82 is fully supplied, nozzle 1620 is in standby position. In standby position, nozzle 1620 is in standby position in a main port (not shown). The main port is located outside the processing container 1200 within housing 1100.

[0094] The fan filter unit 1260 is disposed inside the top wall of the housing 1100 and supplies downward airflow 84 into the interior space 1120. The fan filter unit 1260 has a fan that introduces outside air into the interior space 1120 and a filter that filters the outside air.

[0095] The exhaust pipe 1140 is connected to the housing 1100 to be located outside the processing container 1200 and exhausts the airflow 84 supplied to the space between the processing container 1200 and the housing 1100 to the outside.

[0096] The processing container 1200 may include an outer cup 1220.

[0097] The outer cup 1220 can be configured to surround the support unit 1400 and the substrate W supported on the support unit 1400. The outer cup 1220 has a bottom wall 1222, a side wall 1224, and a top wall 1226. The inner cup 1220 of the outer cup is configured as the aforementioned internal space 1280. The internal space 1280 includes a processing space in the top region and an exhaust space 1248 in the lower region.

[0098] The bottom wall 1222 has a circular shape and an opening at its center. A side wall 1224 extends upward from the outer end of the bottom wall 1222. The side wall 1224 is annular and perpendicular to the bottom wall 1222. According to one embodiment, the side wall 1224 extends to a height equal to or slightly below the top surface of the support plate 1420. The top wall 1226 has an annular shape and an opening at its center. The top wall 1226 extends obliquely and upward from the top of the side wall 1224 toward the central axis of the outer cup 1220.

[0099] A portion of the processing space below the support plate 1420 may be configured as an exhaust space 1248. According to one embodiment, the exhaust space 1248 may be configured as the bottom region of the first gas-liquid separator plate, described later. According to one embodiment, the exhaust space 1248 may be configured as an internal region of the second gas-liquid separator plate 1290, described later, within the bottom region of the first gas-liquid separator plate 1270. According to one embodiment, the exhaust space 1248 may be defined as the space formed between the internal regions of the first gas-liquid separator plate 1270 and the second gas-liquid separator plate 1290.

[0100] A gas-liquid separation plate may be disposed within the internal space 1280 of the processing container 1200. The gas-liquid separation plate may include a first gas-liquid separation plate 1270 disposed on the sidewall 1224 of the outer cup 1220. The first gas-liquid separation plate 1270 may protrude inwardly from the sidewall 1224 of the outer cup 1220. The first gas-liquid separation plate 1270 may extend circumferentially along the inner surface of the sidewall 1224 of the outer cup 1220. The first gas-liquid separation plate 1270 may include a first portion 1272 extending upward from the inner surface of the sidewall 1224 of the outer cup 1220 toward the rotation axis 1440 of the support unit 1400, and a second portion 1276 extending upward from the top of the first portion 1272. According to one embodiment, the first portion 1272 of the first gas-liquid separation plate 1270 is configured to tilt downward as it moves away from the rotation axis 1440, such that its inner end is positioned higher than its outer end. A discharge hole 1274 is formed in the region of the first gas-liquid separation plate 1270 near the side wall 1224 of the outer cup 1220. A plurality of drainage holes 1274 are provided along the length of the first portion 1272 of the first gas-liquid separation plate 1270. Therefore, the processing liquid 82 introduced into the top region of the first gas separation plate 1270 can be introduced into the exhaust space 1252 through the drainage hole 1274 together with the airflow 84 of the processing liquid 82 supplied to the substrate W from the nozzle 1620. The second portion 1276 extends parallel to the rotation axis 1440. The second portion 1276 is located below the substrate W supported by the support unit 1400. The second portion 1276 is located below the support plate 1420. The second portion 1276 is spaced apart from the support unit 1400. Therefore, the airflow 84 flowing into the space between the second portion 1276 of the first gas-liquid separation plate 1270 and the support unit 1400 flows into the exhaust space 1248. The airflow 84 introduced into the top region of the first gas-liquid separator 1270 can be introduced into the exhaust space 1248 outside the second part 1276.

[0101] The gas-liquid separation plate may include a second gas-liquid separation plate 1290 disposed on the bottom wall 1222 of the outer cup 1220. The second gas-liquid separation plate 1290 may be configured to extend upward from the bottom wall 1222 of the outer cup 1220. The second gas-liquid separation plate 1290 may be annular. When viewed from above, the second gas-liquid separation plate 1290 may be located between the side wall 1224 of the outer cup 1220 and the support unit. The second gas-liquid separation plate 1290 may be disposed below the first portion 1272 of the first gas-liquid separation plate 1270. The second gas-liquid separation plate 1290 may be configured to be lower than the first portion 1272 of the first gas-liquid separation plate 1270. The second gas-liquid separation plate 1290 may be spaced apart from the first gas-liquid separation plate 1270 in the vertical direction. Therefore, the airflow 84 through the drain hole 1274 may be introduced together with the processing liquid 82 into the exhaust space 1248 outside the second gas separation plate 1276.

[0102] A drain pipe 1250 for discharging the treatment liquid 82 is connected to the bottom wall 1222 of the outer cup 1220. The drain pipe 1250 discharges the treatment liquid 82 introduced between the side wall 1224 of the outer cup 1220 and the outer wall 1244 of the inner cup 1240 to the outside of the treatment container 1200. According to one embodiment, the space between the side wall 1224 of the outer cup 1220 and the second gas-liquid separator 1290 is configured as a drain space 1252 for discharging the treatment liquid 82, and the drain pipe 1250 discharges the treatment liquid 82 from the drain space 1252. In this process, the treatment liquid 82 contained in the airflow 84 flowing through the drain hole 1274 of the first gas-liquid separator is discharged from the drain space 1252 to the outside of the treatment container 1200 through the drain pipe 1250, and the airflow 84 is introduced into the exhaust space 1248 of the treatment container 1200.

[0103] One or more drain pipes 1250 can be provided. When multiple drain pipes 1250 are provided, the drain pipes 1250 can be arranged along the circumferential direction of the outer cup 1220.

[0104] Although not shown, a lift / lower driver can be provided for adjusting the height of the outer cup 1220 relative to the support plate 1420. According to one embodiment, the lift / lower driver can move the outer cup 1220 in the vertical direction. For example, the support plate 1420 is positioned higher than the top of the outer cup 1220 to prevent interference between the transport member for transporting the substrate W and the outer cup 1220 when the substrate W is loaded onto or unloaded from the support plate 1420. Furthermore, during processing, the support plate 1420 is positioned lower than the top of the outer cup 1220, such that the substrate W is located within the processing space.

[0105] The exhaust unit 1900 may include an exhaust pipe 1800.

[0106] A pressure regulating component (not shown) is installed at the exhaust pipe 1800 to draw in airflow 84 within the exhaust space 1248. The pressure regulating component may be a pump.

[0107] Figure 12 It shows the use of Figure 10 The flow path of the airflow 84 and the processing liquid 82 within the internal space of the processing container when the device performs liquid processing on the substrate W.

[0108] refer to Figure 12During the coating process, the substrate W is supported by and rotated by the support plate 1420. External air is supplied to the substrate W as a downward airflow 84 from the fan filter unit 1260. Additionally, a processing liquid 82, such as photoresist, is supplied to the substrate W from the nozzle 1620. Due to the rotation of the substrate W, the airflow 84 flows outward from the substrate W as it bends along the rotation direction of the substrate W in the area on and around the upper surface of the substrate W. As the airflow 84 flows outward from the substrate W, the airflow 84 and processing liquid 82 supplied to the substrate W are introduced into the top space of the first gas-liquid separation plate 1270. In this case, since the inner cup installed in a conventional substrate processing apparatus is removed, the airflow 84 introduced into the top space of the first gas-liquid separation plate 1270 can be smoothly introduced into the exhaust space 1248 without colliding with or being disturbed by internal components.

[0109] In this configuration, due to the inclination of the first portion 1272 of the first gas-liquid separation plate 1270, the processing liquid 82 introduced into the top space of the first gas-liquid separation plate 1270 flows to the drain hole 1274 formed in the first portion 1272, and then falls into the drain space 1252 through the drain hole 1274, before being discharged to the outside of the processing container 1200 through the drain pipe 1250. The airflow 84 introduced into the space between the second portion 1276 of the first gas-liquid separation plate 1270 and the support unit 1400 is introduced into the exhaust space 1248, and then discharged to the outside of the processing container 1200 through the exhaust pipe 1800.

[0110] In the following, the substrate processing apparatus 2000 according to a second embodiment of the present invention will be described in more detail with reference to the accompanying drawings.

[0111] Figure 13 The structure of a substrate processing apparatus for processing a substrate by supplying liquid to a rotating substrate, according to a second embodiment of the present invention, is shown. Figure 14 It shows Figure 13 Part of the device.

[0112] refer to Figure 13 and Figure 14 In addition to the configuration of the substrate processing apparatus 1 according to the first embodiment, the substrate processing apparatus 2000 according to the second embodiment may also include an inner cup 1220 and an airflow guide pipe 2700. Hereinafter, the same reference numerals denote components identical to those in the first embodiment, and their descriptions will be omitted.

[0113] The processing container 1200 has an outer cup 1220 and an inner cup 1240.

[0114] The inner cup 1240 is located inside the outer cup 1220. The inner cup 1240 has an inner wall 1242, an outer wall 1244, and a top wall 1246. The inner wall 1242 has a through-hole extending in the vertical direction. The inner wall 1242 is configured to surround the actuator 1460. The inner wall 1242 minimizes the airflow 84 exposed to the actuator 1460 in the processing space. The rotation axis 1440 of the actuator 1460 and / or the support unit 1400 extends vertically through the through-hole. The lower end of the inner wall 1242 may be located on the bottom wall 1222 of the outer cup 1220. The outer wall 1244 is configured to be spaced apart from and surround the inner wall 1242. The outer wall 1244 is positioned spaced apart from the side walls 1224 of the outer cup 1220. The inner wall 1242 is configured to be spaced upwardly from the bottom wall 1222 of the outer cup 1220. Top wall 1246 connects the top end of outer wall 1244 to the top end of inner wall 1242. Top wall 1246 has an annular shape and is configured to surround support plate 1420. According to one embodiment, top wall 1246 has an upwardly convex shape. Top wall 1246 has an outer top wall 1246a that slopes upward from the top end of outer wall 1244 toward rotation axis 1440, and an inner top wall 1246b that slopes downward from outer top wall 1246a to the top end of inner wall 1242. Support plate 1420 may be located in the space surrounded by inner top wall 1246b. According to one embodiment, the apex of top wall 1246 may be located outside support plate 1420 and further inward than the end of substrate W supported by support unit 1400.

[0115] The second portion 1276 of the first gas-liquid separation plate 1270 and the region adjacent to the second portion 1276 of the first portion 1272 can be disposed within the internal space of the inner cup 1240. The first gas-liquid separation plate 1270 can be located between the inner wall 1242 and the outer wall 1244 of the inner cup 1240. The second portion 1276 of the first gas-liquid separation plate 1270 can overlap with the outer wall 1244 in a direction perpendicular to the axial direction of the rotation axis 1440.

[0116] A drain pipe 1250 for discharging the treatment liquid 82 is connected to the bottom wall 1222 of the outer cup 1220. The drain pipe 1250 discharges the treatment liquid 82 introduced between the side wall 1224 of the outer cup 1220 and the outer wall 1244 of the inner cup 1240 to the outside of the treatment container 1200. According to one embodiment, the space between the side wall 1224 of the outer cup 1220 and the second gas-liquid separator 1290 is configured as a drain space 1252 for discharging the treatment liquid 82, and the drain pipe 1250 is configured to discharge the treatment liquid 82 from the drain space 1252. The airflow 84 flowing into the space between the side wall 1224 of the outer cup 1220 and the outer wall 1244 of the inner cup 1240 flows into the space between the second portion 1276 of the first gas-liquid separator 1270 and the outer wall 1244 of the inner cup 1240, and flows into the exhaust space 1248. During this process, the processing liquid 82 contained in the airflow 84 is discharged from the exhaust space 1252 to the outside of the processing container 1200 through the drain pipe 1250, and the airflow is introduced into the exhaust space 1248 of the processing container 1200.

[0117] The gas-liquid separation plate may include a second gas-liquid separation plate 1290 disposed on the bottom wall 1222 of the outer cup 1220. The second gas-liquid separation plate 1290 may be configured to extend upward from the bottom wall 1222 of the outer cup 1220. The second gas-liquid separation plate 1290 may be annular. The second gas-liquid separation plate 1290 may be positioned between the side wall 1224 of the outer cup 1220 and the outer wall 1244 of the inner cup 1240. Alternatively, the gas-liquid separation plate 1230 may be positioned to overlap with the outer wall 1244 of the inner cup 1240 when viewed from above, or may be located inside the outer wall 1244 of the inner cup 1240. According to one embodiment, the top end of the gas-liquid separation plate 1230 may be located below the bottom end of the outer wall 1244 of the inner cup 1240.

[0118] The exhaust unit 2900 discharges airflow 84 from the processing space. The exhaust unit 2900 has an airflow guide pipe 2700.

[0119] The airflow guide duct 2700 guides the airflow 84 at a height equal to or adjacent to the top surface of the substrate W. When the substrate W rotates, the downward airflow 84 supplied to the top region of the substrate W flows from the central region of the substrate W toward the edge region of the substrate W due to centrifugal force. Furthermore, on and near the surface of the substrate W, the airflow 84 bends in the same direction as the rotation direction of the substrate W while flowing outwards. When the airflow 84 deviates from the top surface of the substrate W, its direction is tangential to the rotation direction of the substrate W. The airflow guide duct 2700 is configured such that the airflow 84 deviating from the top surface of the substrate W is introduced into the airflow guide duct 2700 in a tangential direction to the rotation direction of the substrate W.

[0120] An airflow guide 2700 is disposed between the outer cup 1220 and the inner cup 1240. The airflow guide 2700 may be positioned closer to the outer cup 1220 than the inner cup 1240. In one embodiment, the airflow guide 2700 may be mounted on the inner wall 1224 of the outer cup 1220. The path of the airflow 84 is disposed between the airflow guide 2700 and the outer wall 1244 of the inner cup 1240, and a portion of the airflow 84 may flow through this path. The airflow guide 2700 has an inlet 2746a and an outlet 2746b. The inlet 2746a is disposed at an equal or adjacent position to the substrate W supported by the substrate support unit 1400. The outlet 2746b may be configured to connect to an integrated exhaust pipe 2840, which will be described further.

[0121] According to one embodiment, the airflow guide 2700 has a tubular shape. The airflow guide 2700 may be configured such that its length direction is perpendicular to the bottom wall 1222 of the outer cup 1220. The airflow guide 2700 has a top wall 2720 and a side wall 2740. The side wall 2740 has a first surface 2742 facing the inner surface of the outer cup 1220, a second surface 2744 facing the substrate W placed on the substrate support unit 1400, and a third surface 2746 facing a tangential direction with respect to the rotation direction of the substrate W. The top wall 2720 of the airflow guide 2700 is provided as a blocking surface. The first surface 2742 and the second surface 2744 of the side wall 2740 of the airflow guide 2700 are provided as blocking surfaces. The inlet 2746a of the airflow guide 2700 is formed on the third surface 2746, and the portion of the third surface 2746 other than the inlet 2746a is provided as a blocking surface. The airflow guide duct 2700 can be configured to have a uniform cross-section perpendicular to its length. Furthermore, the second surface 2744 of the sidewall 2740 of the airflow guide duct 2700 can be configured to move further away from the rotation axis 1440 of the substrate support unit 1400 as the distance from the inlet 2746a increases. Therefore, when viewed from above, the airflow guide duct 2700 can be configured to have an area that gradually decreases in size with distance from the inlet 2746a. The inlet 2746a can be located in the top region of the first surface 2742. The inlet 2746a can be rectangular in shape.

[0122] One or more airflow guide pipes 2700 may be provided. According to one embodiment, four airflow guide pipes 2700 may be provided, and they may be arranged at equal intervals based on the rotation center of the substrate W.

[0123] The exhaust unit 2900 exhausts the airflow 84 from the interior space of the processing container. The exhaust unit 2900 may also include additional airflow guide pipes 2700.

[0124] Figure 15 This shows when the substrate W passes through Figure 13The flow paths of the gas flow 84 and the treatment liquid 82 when the device performs liquid treatment.

[0125] refer to Figure 15 During the coating process, the substrate W is supported on and rotated by the support plate 1420. At this time, the support unit 1400 rotates the substrate W, causing the airflow 84 generated by the rotation of the substrate W to flow towards the inlet 3722 of the airflow guide pipe 3700. External air is supplied to the substrate W as a downward airflow 84 from the fan filter unit 1260. Furthermore, the processing liquid 82 is supplied to the substrate W from the nozzle 1620. Due to the rotation of the substrate W, the airflow 84 on the top surface of the substrate W bends along the rotation direction of the substrate W and flows towards the outside of the substrate W. As the airflow 84 flows towards the outside of the substrate W, a portion of the airflow 84 is introduced into the airflow guide pipe 3700 and then discharged to the outside of the processing container 1200. Furthermore, the remaining airflow 84 flows downward through the gap between the inner cup 1240 and the outer cup 1220. Thereafter, the remaining airflow 84 is introduced into the exhaust space 1248 in the processing container 1200 and discharged to the outside of the processing container 1200 through a separate exhaust pipe 3820. In addition, the processing liquid 82 used to process the substrate W is introduced into the drain space 1252 through the space between the inner cup 1240 and the outer cup 1220, and then discharged to the outside of the processing container 1200 through the drain pipe 1250.

[0126] The airflow 84 discharged from the airflow guide pipe 3700 and the separate exhaust pipe 3820 is introduced into the airflow inlet 3842 of the integrated exhaust pipe 3840. Thereafter, the treatment liquid 82 is separated by the gas-liquid separation plate 3846, and the airflow 84 is discharged to the outside through the airflow outlet 3844.

[0127] according to Figure 15 In this embodiment, a portion of the airflow 84 is introduced into the airflow guide duct 3700. At this time, the airflow 84 flowing towards the outside of the substrate W by centrifugal force can be smoothly introduced into the airflow guide duct 3700 without colliding with or interfering with the inner wall 1244 of the processing container 1200 or another external component of the processing container 1200, because the airflow guide duct 3700 is configured such that the airflow 84 is introduced into the airflow guide duct 3700 in a tangential direction relative to the rotational direction of the substrate W.

[0128] Furthermore, a portion of the airflow 84 is introduced into the exhaust space 1248 within the processing container 1200. However, the amount of airflow 84 introduced into the exhaust space 1248 is very small compared to when the airflow guide 3700 is not provided. Therefore, the airflow 84 can be smoothly discharged through the exhaust space 1248 without turbulence or large impacts.

[0129] Figure 16 This shows when the substrate W passes through Figure 13 A cross-sectional view of the flow paths of the airflow and the processed liquid during liquid processing in the device.

[0130] Reference Figure 16 and Figure 17 In the coating process, the substrate W is supported on the support plate 1420 and rotated by the support plate 1420. At this time, the support unit 1400 rotates the substrate W so that the airflow 84 generated by the rotation of the substrate W flows toward the inlet 2746a of the airflow guide pipe 2700. External air is supplied to the substrate W as a downward airflow 84 from the fan filter unit 1260. In addition, the processing liquid 82 is supplied to the substrate W from the nozzle 1620. Due to the rotation of the substrate W, the airflow 84 on the top surface of the substrate W flows toward the outside of the substrate W while changing to the rotation direction of the substrate W. When the airflow 84 flows toward the outside of the substrate W, a portion of the airflow 84 is introduced into the airflow duct 2700 and then discharged to the outside of the processing container 1200. Furthermore, the remaining airflow 84 of the airflow 84 flows through the gap between the inner cup 1240 and the outer cup 1220, and then flows into the exhaust space 1248 in the processing container 1200 through the second part 1276 of the first gas-liquid separation plate 1270 and the outer wall 1244 of the inner cup 1240, and is then discharged to the outside of the processing container 1200 through a separate exhaust device. Additionally, the processing liquid 82 that has processed the substrate W is introduced into the drain space 1252 through the drain hole 1274 of the first gas-liquid separation plate 1270, and is discharged to the outside of the processing container 1200 through the drain pipe 1250.

[0131] according to Figure 13 In this embodiment, a portion of the airflow 84 is introduced into the airflow guide pipe 2700. In this case, since the airflow guide pipe 2700 is configured to introduce the airflow 84 in a tangential direction along the rotation direction of the substrate W, the airflow 84 flowing to the outside of the substrate W by centrifugal force can be smoothly introduced into the airflow guide pipe 2700 without colliding with or interfering with the processing container 1200 or the components disposed therein.

[0132] Furthermore, some airflow 84 is introduced into the top space of the first gas-liquid separator 1270 and then discharged. In this case, since the amount of airflow 84 introduced into the top space of the first gas-liquid separator 1270 is very small compared to when the airflow guide pipe 2700 is not provided, the airflow can be smoothly discharged through the exhaust space 1248 without turbulence or large collisions. In addition, when the separation space between the first gas-liquid separator 1276 and the inner wall 1242 of the inner cup 1240 narrows, the exhaust force decreases, and the exhaust force can be supplemented by the airflow guide pipe 2700.

[0133] In the example above, the airflow 84 supplied to the substrate W flows through a first path into the exhaust space 1248 located below the support plate 1420 in the processing space and a second path into the airflow guide pipe 2700. However, alternatively, the substrate processing apparatus 2000 may be configured such that all airflow 84 supplied to the substrate W flows only through the second path.

[0134] In the following description, substrate processing apparatuses 3000 and 4000 according to the third and fourth embodiments of the present invention will be described with reference to the accompanying drawings. The same reference numerals denote the same components as those in the first and second embodiments, and their descriptions will be omitted.

[0135] Figure 16 The structure of a substrate processing apparatus for processing a substrate by supplying liquid to a rotating substrate, according to a third embodiment of the present invention, is shown. Figure 17 The structure of a substrate processing apparatus for processing a substrate according to a fourth embodiment of the present invention is shown.

[0136] The substrate processing apparatus 3000 according to the third embodiment also includes the inner cup 1240 of the substrate processing apparatus 1000 according to the first embodiment, and the substrate processing apparatus 4000 according to the fourth embodiment also includes an airflow guide pipe 2700.

[0137] In the example above, the airflow guide pipe introduces airflow along the tangential direction of the rotation direction of the substrate W. However, unlike this, the airflow guide pipe can be configured to introduce airflow in a direction different from the tangential direction of the rotation direction of the substrate W. For example, the airflow guide pipe can be configured such that its inlet is located at the same or adjacent height as the substrate and draws airflow into the radial direction of the substrate W.

[0138] The above description illustrates the inventive concept by example. Furthermore, while the foregoing describes embodiments of the inventive concept, it can be used in various other combinations, variations, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept disclosed herein, the equivalent scope of the written disclosure, and / or the technical or knowledge scope of those skilled in the art. The written embodiments describe the optimal state for realizing the technical spirit of the inventive concept, and various changes can be made as needed for specific applications and purposes of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept in the disclosed embodiments. Furthermore, it should be understood that the appended claims include other embodiments.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a process container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; a liquid supply unit configured to supply a process liquid to the substrate supported by the support unit; an exhaust unit configured to exhaust an air flow in the inner space; and an air flow guide tube provided to introduce an air flow in a tangential direction of rotation of the substrate supported by the support unit, wherein the process container includes a bottom wall and a side wall extending from an outer end of the bottom wall, and the process container includes a first gas-liquid separation plate provided at the side wall and a second gas-liquid separation plate provided at the bottom wall, wherein the first gas-liquid separation plate includes: a first portion extending from the side wall and inclined upward toward a direction of an axis of rotation of the support plate, the first portion having a liquid discharge hole formed therein; and a second portion extending upward from a top end of the first portion, the second portion defining an upper space for inflow of the process liquid together with the first portion, and the second portion being provided at a position lower than the support plate, wherein the inner space includes a discharge space formed between an outer region of the first gas-liquid separation plate and the second gas-liquid separation plate and an exhaust space formed between inner regions of the first gas-liquid separation plate and the second gas-liquid separation plate, wherein the exhaust unit is installed at a position away from the second gas-liquid separation plate and is configured to exhaust the air flow introduced into the exhaust space to the outside, wherein the second gas-liquid separation plate is provided below the first portion of the first gas-liquid separation plate and spaced apart from the first portion, such that the air flow introduced into the discharge space is introduced into the exhaust space through the second gas-liquid separation plate, wherein the air flow guide tube is located within the inner space of the process container, wherein the air flow guide tube is provided between the second gas-liquid separation plate and an inner wall of the process container, and wherein the air flow guide tube is provided with a length direction in a vertical direction, the air flow guide tube includes a top wall serving as a blocking surface and a side wall, an inlet formed at the side wall faces a direction parallel to a tangent of the substrate supported by the support unit, and a remaining portion of the wall serves as a blocking surface. The liquid discharge hole is provided closer to the side wall of the process container than to the second portion.

2. The apparatus of claim 1, wherein, The support unit includes a rotatable support plate on which the substrate is placed.

3. The apparatus of claim 1, wherein, A plurality of air flow guide tubes are provided separately along a circumferential direction of the substrate.

4. The apparatus of claim 1, wherein, 5.The apparatus according to claim 1, further comprising: a fan unit supplying a downward air flow to the inner space; and a process liquid nozzle supplying a process liquid to the substrate supported by the support unit. 6.An apparatus for processing a substrate, the apparatus comprising: a process container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; ​ ​ a liquid supply unit that supplies a processing liquid to the substrate supported by the support unit; and an exhaust unit that exhausts a gas flow in the internal space, wherein the processing vessel includes: an outer cup that provides the internal space; an inner cup that is separately disposed from the outer cup and is placed in the internal space; a first gas-liquid separation plate provided at a side wall of the outer cup; and a second gas-liquid separation plate provided at a bottom wall of the outer cup, wherein the first gas-liquid separation plate includes: a first portion that extends from the side wall and is inclined upward toward a direction of an axis of rotation of the support plate, the first portion having a liquid discharge hole formed therein; and a second portion that extends upward from a top end of the first portion, the second portion defining an upper space for inflow of the processing liquid in cooperation with the first portion, and the second portion being disposed at a lower position than the support plate, wherein the internal space includes a discharge space formed between an outer region of the first gas-liquid separation plate and the second gas-liquid separation plate, and an exhaust space formed between inner regions of the first gas-liquid separation plate and the second gas-liquid separation plate, wherein the exhaust unit is installed at a position away from the second gas-liquid separation plate, and is configured to exhaust a gas flow introduced into the exhaust space to the outside, wherein the second gas-liquid separation plate is disposed below and spaced apart from the first portion of the first gas-liquid separation plate, such that a gas flow introduced into the discharge space is introduced into the exhaust space through the second gas-liquid separation plate, wherein the exhaust unit further includes a gas flow guide tube that is placed between the inner cup and the outer cup and is disposed to introduce a gas flow in a tangential direction of a direction of rotation of the substrate supported by the support unit, wherein the gas flow guide tube is located within the internal space of the processing vessel, wherein the gas flow guide tube is disposed between the second gas-liquid separation plate and an inner wall of the processing vessel, and wherein the gas flow guide tube is disposed such that a length direction thereof is in a vertical direction, the gas flow guide tube includes a top wall that functions as a blocking surface, an inlet formed at a side wall thereof faces a direction parallel to a tangent of the substrate supported by the support unit, and a remaining portion of the wall functions as a blocking surface.

7. The apparatus of claim 6, wherein, the inner cup includes: an inner wall that is disposed to surround the support unit; an outer wall that is disposed to surround the inner wall; and a top wall that connects a top end of the inner wall and a top end of the outer wall, wherein the outer wall of the inner cup is separately disposed from the second portion of the first gas-liquid separation plate.

8. An apparatus for processing a substrate, the apparatus comprising: a processing vessel having an internal space; a support unit having a support plate configured to support and rotate the substrate in the internal space; a liquid supply unit that supplies a processing liquid to the substrate supported by the support unit; and an exhaust unit that exhausts a gas flow in the internal space, wherein the processing vessel includes: an outer cup that provides the internal space; an inner cup that is separately disposed from the outer cup and is placed in the internal space, the processing vessel includes: a first gas-liquid separation plate disposed at a side wall of the outer cup; and a second gas-liquid separation plate disposed at a bottom wall of the outer cup, the exhaust unit includes a gas flow guide tube disposed between the inner cup and the outer cup, the gas flow guide tube introduces a gas flow in a tangential direction of a rotation direction of the substrate supported by the support unit, wherein the first gas-liquid separation plate includes: a first portion extending from the side wall and inclined upward in a direction of an axis of rotation of the support plate, the first portion having a liquid discharge hole formed therein; and a second portion extending upward from a top end of the first portion, the second portion defining an upper space for inflow of a treatment liquid together with the first portion, and the second portion being disposed at a lower position than the support plate, wherein the inner space includes a discharge space formed between an outer region of the first gas-liquid separation plate and the second gas-liquid separation plate, and an exhaust space formed between inner regions of the first gas-liquid separation plate and the second gas-liquid separation plate, wherein the exhaust unit is mounted at a position apart from the second gas-liquid separation plate, and is configured to discharge a gas flow introduced into the exhaust space to the outside, wherein the second gas-liquid separation plate is disposed below and spaced apart from the first portion of the first gas-liquid separation plate, such that a gas flow introduced into the discharge space is introduced into the exhaust space through the second gas-liquid separation plate, wherein the gas flow guide tube is disposed between the second gas-liquid separation plate and an inner wall of the treatment vessel, and wherein the gas flow guide tube is disposed with its length direction in a vertical direction, the gas flow guide tube includes a top wall and a side wall, the top wall serving as a blocking surface, an inlet formed at the side wall facing a direction parallel to a tangent of the substrate supported by the support unit, and the remaining portion of the wall serving as a blocking surface.

Images