Display panel, manufacturing method thereof, and display device

Abstract

The application discloses a display panel and a manufacturing method therefor, and a display device, and belongs to the technical field of display. The display panel comprises a substrate, a plurality of pixel structures are arranged on the substrate, a color resistance layer is arranged on the side of the plurality of pixel structures away from the substrate, and the color resistance layer comprises a plurality of color resistance blocks which are arranged in one-to-one correspondence with the plurality of pixel structures. Each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the color resistance block arranged in correspondence therewith. The application solves the problem of poor display effect of the display panel, improves the display effect of the display panel, and is used for the display panel.

Description

[0001] This application is a divisional application of the invention patent application with the application date of May 9, 2018, application number: 201810438219.8, and invention name: "Display panel and its manufacturing method, display device". Technical Field

[0002] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0003] With the development of display technology, organic light-emitting diode (OLED) display panels have been widely used.

[0004] An OLED display panel typically includes a substrate on which a plurality of OLEDs are arranged. A color resist layer is further provided on a side of the OLEDs away from the substrate. For example, the plurality of OLEDs are all capable of emitting white light, and the color resist layer includes a plurality of color resist blocks corresponding to the plurality of OLEDs. The plurality of color resist blocks include: a red color resist block, a green color resist block, and a blue color resist block. Each color resist block only allows light of a specified wavelength in the incident white light to pass through, such as a red color resist block only allows red light to pass through, a green color resist block only allows green light to pass through, and a blue color resist block only allows blue light to pass through, thereby causing the OLED display panel to emit colored light.

[0005] However, the color purity of the colored light emitted by the OLED display panel in the related art is low, and the display effect of the OLED display panel is poor. Summary of the Invention

[0006] This application provides a display panel, a manufacturing method thereof, and a display device, which can solve the problem of poor display effect of the display panel. The technical solution is as follows:

[0007] In one aspect, a display panel is provided, comprising: a substrate;

[0008] A plurality of pixel structures are provided on the base substrate, a color resist layer is provided on a side of the plurality of pixel structures away from the base substrate, and the color resist layer includes a plurality of color resist blocks provided in a one-to-one correspondence with the plurality of pixel structures;

[0009] Each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the color resist block corresponding to it.

[0010] Optionally, the pixel structure includes a series-connected OLED consisting of multiple electroluminescent structures.

[0011] Optionally, the pixel structure includes: a red light-emitting layer, a green light-emitting layer, a first electrical connection layer, and a blue light-emitting layer sequentially arranged on the base substrate.

[0012] The first electroluminescent structure includes the red light-emitting layer and the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer; the first electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer.

[0013] Optionally, the pixel structure includes: a red light-emitting layer, a second electrical connection layer, a green light-emitting layer, a first electrical connection layer, and a blue light-emitting layer sequentially arranged on the base substrate.

[0014] The third electroluminescent structure includes the red light-emitting layer, the fourth electroluminescent structure includes the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer;

[0015] The third electroluminescent structure and the fourth electroluminescent structure are connected in series via the second electrical connection layer, and the fourth electroluminescent structure and the second electroluminescent structure are connected in series via the first electrical connection layer.

[0016] Optionally, the pixel unit further includes: a first electrode, the multiple electroluminescent structures, and a second electrode sequentially arranged on the base substrate.

[0017] The first electrode includes a reflective conductive layer, the second electrode includes a semi-transmissive and semi-reflective conductive layer, and the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer form a resonant cavity;

[0018] The distance between the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer is the cavity length of the resonant cavity, and the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure.

[0019] Optionally, the first electrode includes: a first transparent conductive layer, the reflective conductive layer, an insulating layer, and a second transparent conductive layer sequentially arranged on the base substrate;

[0020] The second transparent conductive layer is connected to the reflective conductive layer through a via hole on the insulating layer. The wavelength of light emitted by the pixel structure is positively correlated with the thickness of the insulating layer in the pixel structure.

[0021] Optionally, the first electrode includes: a first transparent conductive layer, the reflective conductive layer and a second transparent conductive layer arranged in sequence on the base substrate; the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the second transparent conductive layer in the pixel structure.

[0022] Optionally, the pixel structure further includes a functional film layer located between the first electrode and the second electrode, the functional film layer including: at least one of an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the functional film layer in the pixel structure.

[0023] Optionally, the cavity length of the resonant cavity in the pixel structure is

[0024] Wherein, k is an integer, λ is the wavelength of light emitted by the pixel structure, n is the average refractive index of the medium in the resonant cavity, and θ is the reflection angle of light reflected on the conductive layer in the pixel structure.

[0025] Optionally, the plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light.

[0026] The cavity length of the first resonant cavity in the red pixel structure corresponds to k i, the cavity length of the second resonant cavity in the green pixel structure corresponds to k i, and the cavity length of the third resonant cavity in the blue pixel structure corresponds to k i, i≥1.

[0027] Optionally, the plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light.

[0028] The cavity length of the first resonant cavity in the red pixel structure corresponds to k j, the cavity length of the second resonant cavity in the green pixel structure corresponds to k j, and the cavity length of the third resonant cavity in the blue pixel structure corresponds to k j+1, j ≥ 1.

[0029] In another aspect, a method for manufacturing a display panel is provided, the method comprising:

[0030] providing a substrate;

[0031] forming a plurality of pixel structures on the base substrate;

[0032] forming a color resist layer on a side of the plurality of pixel structures away from the base substrate;

[0033] In which, the color resist layer includes a plurality of color resist blocks arranged in one-to-one correspondence with the plurality of pixel structures, each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the color resist block corresponding to it.

[0034] Optionally, a plurality of pixel structures are formed on the substrate, including:

[0035] When forming each pixel structure, a red light-emitting layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer are sequentially formed on the base substrate;

[0036] The red light-emitting layer and the green light-emitting layer form a first electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure; the first electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer, and the multiple color light-emitting layers are connected in series with each other.

[0037] Optionally, a plurality of pixel structures are formed on the substrate, including:

[0038] When forming each pixel structure, a red light-emitting layer, a second electrical connection layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer are sequentially formed on the base substrate;

[0039] The red light-emitting layer forms a third electroluminescent structure, the green light-emitting layer forms a fourth electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure; the third electroluminescent structure and the fourth electroluminescent structure are connected in series through the second electrical connection layer, and the fourth electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer.

[0040] On the other hand, a display device is provided, comprising the above-mentioned display panel.

[0041] The beneficial effects of the technical solution provided by this application include at least:

[0042] The display panel provided by an embodiment of the present invention includes: multiple pixel structures and a color resist layer, and each OLED is used to emit light of the same color as the corresponding color resist block. Therefore, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0044] Figure 1 A schematic structural diagram of a first display panel provided by an embodiment of the present invention;

[0045] Figure 2 A schematic structural diagram of a second display panel provided by an embodiment of the present invention;

[0046] Figure 3 is a graph showing the relationship between the intensity and wavelength of light of the second display panel;

[0047] Figure 4 is the color gamut diagram of the second display panel;

[0048] Figure 5 A schematic structural diagram of a third display panel provided by an embodiment of the present invention;

[0049] Figure 6 is a graph showing the relationship between the intensity and wavelength of light of the third display panel;

[0050] Figure 7 is the color gamut diagram of the third display panel;

[0051] Figure 8 A schematic structural diagram of a fourth display panel provided by an embodiment of the present invention;

[0052] Figure 9 A schematic structural diagram of a fifth display panel provided by an embodiment of the present invention;

[0053] Figure 10 A schematic structural diagram of a sixth display panel provided by an embodiment of the present invention;

[0054] Figure 11 A schematic diagram of the structure of a display panel provided for related technology;

[0055] Figure 12 is a flow chart of a method for manufacturing a display panel according to an embodiment of the present invention;

[0056] Figure 13 A flow chart of a method for manufacturing an OLED provided by an embodiment of the present invention;

[0057] Figure 14 A schematic diagram of a first process for manufacturing an OLED provided by an embodiment of the present invention;

[0058] Figure 15 A schematic diagram of a second process for manufacturing an OLED according to an embodiment of the present invention;

[0059] Figure 16 A schematic diagram of a third process for manufacturing an OLED according to an embodiment of the present invention;

[0060] Figure 17 A schematic diagram of a fourth process for manufacturing an OLED according to an embodiment of the present invention;

[0061] Figure 18 A schematic diagram of a fifth process for manufacturing an OLED provided by an embodiment of the present invention;

[0062] Figure 19 This is a schematic diagram of a sixth process for manufacturing an OLED provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0063] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0064] Display devices have been widely used due to their fast response speed, full solidification, and self-luminescence. For example, display devices can be used in the fields of flexible displays, transparent displays, and micro displays.

[0065] Applications of display devices in the micro-display field may include augmented reality (AR) displays, head-mounted displays, stereoscopic displays, and eyeglass displays. The micro-display field requires display devices to have high color purity, brightness (e.g., brightness greater than 1500 nits), and color gamut. An embodiment of the present invention provides a display device having a display panel that can be used in the micro-display field. The display device can also be used in other display fields, which is not limited by the embodiment of the present invention.

[0066] Figure 1 A schematic structural diagram of a first display panel provided by an embodiment of the present invention is shown in FIG. Figure 1 As shown, the display panel 0 may include: a base substrate 01 .

[0067] A base substrate 01 is provided with multiple pixel structures 02. A color resist layer 03 is provided on a side of the multiple pixel structures 02 away from the base substrate 01. The color resist layer 03 includes multiple color resist blocks 031 arranged in a one-to-one correspondence with the multiple pixel structures 02. Each pixel structure 02 in the multiple pixel structures 02 emits light of a single color. For each pixel structure 02 in the multiple pixel structures 02, the color of the light emitted by the pixel structure 02 is the same as the color of the corresponding color resist block 031.

[0068] It should be noted that each color block 031 corresponds to a color. The color block 031 only allows light of its corresponding color to pass through, and prohibits light of non-corresponding colors from passing through. The color of the color block 031 is also the color corresponding to the color block.

[0069] To summarize, since the display panel provided by the embodiment of the present invention includes: multiple pixel structures and color resist layers, and each OLED is used to emit light of the same color as the corresponding color resist block, more light emitted by the pixel structure can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0070] Optionally, the material of the substrate may be silicon, or other materials such as glass, which is not limited in the embodiment of the present invention.

[0071] Optionally, the pixel structure 02 in the display panel 0 may also be a microcavity OLED, that is, the pixel structure 02 may include: a first electrode, a plurality of electroluminescent structures, and a second electrode sequentially arranged on a substrate. Of the two electrodes of the pixel structure 02, the first electrode (such as an anode) close to the substrate includes a reflective conductive layer, and the second electrode (such as a cathode) away from the substrate includes a semi-transparent and semi-reflective conductive layer. The two electrodes can form a resonant cavity. The distance between the reflective conductive layer and the semi-transparent and semi-reflective conductive layer is the cavity length of the resonant cavity, and the wavelength of the light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure. It should be noted that the light emitted by all the light-emitting layers in the pixel structure 02 can form white light. The resonant cavity can filter light of a certain color in the white light for energy amplification and weaken the energy of other light of different colors, so that the pixel structure 02 emits light of the certain color, and the brightness of the light emitted by the pixel structure 02 is high. The pixel structure 02 in the embodiment of the present invention can emit light of the same color as the color block 031 corresponding to the pixel structure 02 through the resonant cavity.

[0072] Optionally, the pixel structure 02 in the display panel 0 may include a series-type OLED composed of multiple electroluminescent structures. It should be noted that the series-type OLED has a higher luminous efficiency and a higher luminous power. Therefore, the display panel 0 provided in the embodiment of the present invention has a higher luminous efficiency and a higher luminous power.

[0073] For example, the display panel provided by the embodiment of the present invention may have multiple implementation modes, and five of the implementation modes will be described below as examples.

[0074] Figure 2 A schematic structural diagram of a second display panel provided by an embodiment of the present invention, Figure 2 A first possible implementation of a display panel is shown. The pixel structure 02 in the display panel 0 may include: a first electrode 021, a red light-emitting layer 022, a green light-emitting layer 023, a first electrical connection layer 024, a blue light-emitting layer 025 and a second electrode 026, which are sequentially arranged on a base substrate 01.

[0075] One of the first electrode 021 and the second electrode 026 can be a cathode, and the other can be an anode. In the embodiment of the present invention, the first electrode 021 is used as an anode, and the second electrode 026 is used as a cathode. For example, the first electrode 021 and the second electrode 026 form a resonant cavity in the OLED. For each OLED, the cavity length d of the resonant cavity in the OLED is related to the wavelength λ of the light emitted by the OLED.

[0076] For example, the relationship between the cavity length d and the wavelength λ can be: 2k(λ / 2) = 2ndcosθ, where k is an integer and can be called the cavity length coefficient; n represents the average refractive index of the medium in the resonant cavity, and θ is the reflection angle of light reflected on the conductive layer in the OLED. Since the wavelength of light is related to the color of light, the cavity length is related to the color of the light emitted by the OLED. By adjusting the cavity length d of the resonant cavity, the color of the light emitted by the OLED can be adjusted. In the display panel 0, the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure. The cavity lengths of the resonant cavities in two pixel structures 02 emitting light of different colors are different.

[0077] In the embodiment of the present invention, the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the insulating layer in the first electrode 021 in the pixel structure 02. At this time, the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the insulating layer in the pixel structure.

[0078] For example, the first electrode 021 may include: a first transparent conductive layer 0211, a reflective conductive layer 0212, an insulating layer 0213, and a second transparent conductive layer 0214 sequentially arranged on the base substrate 01. In addition, the second transparent conductive layer 0214 is connected to the insulating layer 0213 through a via hole ( Figure 2 The first transparent conductive layer 0211 and the second transparent conductive layer 0214 can both be made of indium tin oxide. The reflective conductive layer 0212 can be made of silver. The insulating layer 0213 can be made of silicon dioxide. The semi-transparent and semi-reflective conductive layer in the second electrode 026 can be made of a magnesium-silver-doped semi-transparent and semi-reflective material. The thickness of the insulating layer 0213 in the two pixel structures 02 emitting different light differs, resulting in different cavity lengths in the resonant cavities of the two pixel structures 02 emitting different light.

[0079] Optionally, k corresponding to the cavity length of the resonant cavity in each pixel structure 02 can be any integer, and when k takes any value, the wavelength of light emitted by the pixel structure is the same. In an embodiment of the present invention, under the premise that the pixel structure 02 emits light of a certain color through the resonant cavity, the cavity length of the resonant cavity in the pixel structure 02 can be selected to correspond to any value of k. When the cavity length of the resonant cavity in the pixel structure 02 is short and the thickness of each film layer in the pixel structure 02 is also thin, the value of k corresponding to the cavity length of the resonant cavity can be appropriately increased to increase the cavity length of the resonant cavity and the thickness of each film layer in the pixel structure 02, thereby facilitating the manufacture of the pixel structure 02.

[0080] For example, Figure 2The multiple pixel structures 02 in the display panel shown may include: a red pixel structure 02 for emitting red light, a green pixel structure 02 for emitting green light, and a blue pixel structure 02 for emitting blue light. The k corresponding to the cavity length of the first resonant cavity in the red pixel structure 02 may be i, the k corresponding to the cavity length of the second resonant cavity in the green pixel structure 02 may be i, and the cavity length of the third resonant cavity in the blue pixel structure 02 and the k corresponding to the third resonant cavity may be i, i≥1. That is, the k corresponding to the cavity length of the resonant cavity in these three pixel structures is i. The thickness of the insulating layer in the red pixel structure 02 may be 145 nanometers, the thickness of the insulating layer in the green pixel structure 02 may be 90 nanometers, and the thickness of the insulating layer in the blue pixel structure 02 may be 45 nanometers.

[0081] Also, please continue to refer to Figure 2 Each pixel structure 02 may further include: a first hole injection layer (HIL) 027, a first hole transport layer (HTL) 028, a first electron transport layer (ETL) 029, a second hole injection layer B1, a second hole transport layer B2, a second electron transport layer B3, and an electron injection layer (EIL) B4. A thin film encapsulation (TFE) layer is further provided between the plurality of pixel structures 02 and the color resist layer 03. Figure 2 (not shown), the color resist layer 03 further includes: a black matrix 032 located between the color resist blocks 031.

[0082] Among them, the thickness of the first transparent conductive layer 0211 can be 80 angstroms, the thickness of the reflective conductive layer 0212 can be 1000 angstroms, the thickness of the second transparent conductive layer 0214 can be 80 angstroms, the thickness of the first hole injection layer 027 can be 100 angstroms, the thickness of the first hole transport layer 028 can be 150 angstroms, the thickness of the red light-emitting layer 022 can be 100 angstroms, the thickness of the green light-emitting layer 023 can be 300 angstroms, the thickness of the first electron transport layer 029 can be 200 angstroms, the thickness of the first electrical connection layer 024 can be 150 angstroms, the thickness of the second hole injection layer B1 can be 100 angstroms, the thickness of the second hole transport layer B2 can be 100 angstroms, the thickness of the blue light-emitting layer 025 can be 250 angstroms, the thickness of the second electron transport layer B3 can be 300 angstroms, the thickness of the electron injection layer B4 can be 100 angstroms, and the thickness of the second electrode 026 can be 120 angstroms.

[0083] Further, Figure 2Each pixel structure 02 in the display panel 0 shown may include a tandem OLED (also known as a stacked OLED). Figure 2 In each pixel structure 02, the red light-emitting layer 022 is configured to emit red light, the green light-emitting layer 023 is configured to emit green light, and the blue light-emitting layer 025 is configured to emit blue light. The red light-emitting layer 022 and the green light-emitting layer 023 are stacked together to form an electroluminescent structure, while the blue light-emitting layer 025 independently forms an electroluminescent structure. These two electroluminescent structures are electrically connected via a first electrical connection layer 024 located between the green light-emitting layer 023 and the blue light-emitting layer 025, thereby achieving a series connection of the two electroluminescent structures. That is, the red light-emitting layer and the green light-emitting layer form a first electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure. The first and second electroluminescent structures are connected in series via the first electrical connection layer.

[0084] right Figure 2 The provided display panel is simulated and the following results can be obtained: Figure 3 The graph shown. The horizontal axis of the graph represents the wavelength of light in nanometers, and the vertical axis of the graph represents the intensity of light (dimensionless). Figure 3 , the wavelength of red light emitted by the display panel is concentrated around 600 nanometers, the wavelength of green light is concentrated around 520 nanometers, and the wavelength of blue light is concentrated around 450 nanometers.

[0085] right Figure 2 The simulation of the provided display panel can also produce the parameters shown in Table 1. Please refer to Table 1. The reddest light emitted by the display panel has a CIEx (i.e., the color coordinate x in the color gamut diagram established by the International Commission on Illumination; CIE) of 0.650, a CIEy (i.e., the color coordinate y in the color gamut diagram established by the CIE) of 0.341, and a CIEY (i.e., the brightness in the colorimetry standard established by the CIE) of 66.0. The greenest light emitted by the display panel has a CIEx of 0.117, a CIEy of 0.771, and a CIEY of 79.6. The bluest light emitted by the display panel has a CIEx of 0.146, a CIEy of 0.032, and a CIEY of 66.8.

[0086] Table 1

[0087] Color of light CIEx CIE CIEY red 0.650 0.341 66.0 green 0.117 0.771 79.6 blue 0.146 0.032 66.8

[0088] According to the color coordinates in Table 1, the color gamut of the display panel in the color gamut diagram developed by CIE can be obtained (such as Figure 4It can be seen that the display panel provided by the embodiment of the present invention achieves a color gamut of 120% of the color gamut standard established by the National Television Standards Committee (NTSC).

[0089] Optionally, to increase the brightness of the light emitted by the display panel, the color block in the embodiment of the present invention may have a transmittance of 50% to 60%, or a transmittance higher than 60%, which is not limited in the embodiment of the present invention. The total brightness of all light emitted by the display panel can reach 2500 nits. However, the transmittance of the color block in the related art is often lower, and therefore the total brightness of all light emitted by the display panel in the related art is lower, such as the total brightness is typically 300 nits.

[0090] It can be seen that the display panel provided by the embodiment of the present invention has high brightness, high color gamut and high color purity, and the display panel can meet the requirements of the micro-display field for display devices.

[0091] Figure 5 A schematic structural diagram of a third display panel provided by an embodiment of the present invention, Figure 5 A second possible implementation of the display panel is shown.

[0092] like Figure 5 As shown, in Figure 2 Based on the display panel shown, the cavity length k corresponding to the first resonant cavity in the red pixel structure 02 may be j, the cavity length k corresponding to the second resonant cavity in the green pixel structure 02 may be j, and the cavity length k corresponding to the third resonant cavity in the blue pixel structure 02 may be j+1, where j ≥ 1. Optionally, i and j may be equal or unequal. The thickness of the insulating layer in the red pixel structure 02 may be 90 nanometers, the thickness of the insulating layer in the green pixel structure 02 may be 18 nanometers, and the thickness of the insulating layer in the blue pixel structure 02 may be 120 nanometers.

[0093] right Figure 5 The provided display panel is simulated and the following results can be obtained: Figure 6 The graph shown. The horizontal axis of the graph represents the wavelength of light in nanometers, and the vertical axis of the graph represents the intensity of light in W·m -2 nm -1 ·sr -1 Please refer to Figure 6 , the wavelength of red light emitted by the display panel is concentrated around 620 nanometers, the wavelength of green light is concentrated around 520 nanometers, and the wavelength of blue light is concentrated around 460 nanometers.

[0094] right Figure 5The simulation of the provided display panel can also produce the parameters shown in Table 2. Please refer to Table 2. The CIEx of the reddest light emitted by the display panel is 0.673, the CIEy is 0.341, and the CIEY is 67.3; the CIEx of the greenest light emitted by the display panel is 0.157, the CIEy is 0.740, and the CIEY is 68.9; the CIEx of the bluest light emitted by the display panel is 0.142, the CIEy is 0.048, and the CIEY is 26.8.

[0095] Table 2

[0096] Color of light CIEx CIE CIEY red 0.673 0.341 67.3 green 0.157 0.740 68.9 blue 0.142 0.048 26.8

[0097] According to the color coordinates in Table 2, the color gamut of the display panel in the color gamut diagram developed by CIE can be obtained (such as Figure 7 As shown in the figure, the display panel provided by the embodiment of the present invention achieves a color gamut of 115% of the color gamut standard established by NTSC. In addition, the total brightness of all light emitted by the display panel can reach 2200 nits.

[0098] Figure 8 A schematic structural diagram of a fourth display panel provided by an embodiment of the present invention, Figure 8 A third possible implementation of the display panel is shown.

[0099] like Figure 8 As shown, in Figure 5 Based on the display panel shown, the multiple electroluminescent structures in each pixel structure 02 can also be connected with Figure 5 The multiple electroluminescent structures in are different. For example, Figure 8 In each pixel structure 02 shown, the red light-emitting layer 022 independently forms an electroluminescent structure, the green light-emitting layer 023 independently forms another electroluminescent structure, and the blue light-emitting layer 025 independently forms yet another electroluminescent structure. In this case, a second electrical connection layer B5 may be provided between the red light-emitting layer 022 and the green light-emitting layer 023. The red light-emitting layer 022 can be electrically connected to the green light-emitting layer 023 via the second electrical connection layer B5, and the green light-emitting layer 023 can be electrically connected to the blue light-emitting layer 025 via the first electrical connection layer 024, thereby achieving a series connection of these three electroluminescent structures. That is, the red light-emitting layer forms a third electroluminescent structure, the green light-emitting layer forms a fourth electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure; the third electroluminescent structure and the fourth electroluminescent structure are connected in series via the second electrical connection layer, and the fourth electroluminescent structure and the second electroluminescent structure are connected in series via the first electrical connection layer.

[0100] Please continue to refer to Figure 8The second electrical connection layer B5 may be composed of a second electron transport layer B6, a third hole injection layer B7, and a third hole transport layer B8, which are stacked in sequence, and the electron transport layer is disposed near the red light-emitting layer 022. The second electron transport layer B6 may have a thickness of 300 angstroms, the third hole injection layer B7 may have a thickness of 100 angstroms, and the third hole transport layer B8 may have a thickness of 150 angstroms.

[0101] right Figure 8 The provided display panel is simulated to determine the color gamut achieved by the display panel within the NTSC color gamut standard, the total brightness of all light emitted by the display panel, and the color purity of the light emitted by the display panel. In the third possible implementation, the color gamut, total brightness, and color purity of the display panel are all high.

[0102] Figure 9 A schematic structural diagram of a fifth display panel provided by an embodiment of the present invention, Figure 9 A fourth possible implementation of the display panel is shown.

[0103] like Figure 9 As shown, in Figure 2 Based on the display panel shown, the first electrode 021 in each pixel structure 02 may also not include an insulating layer, but instead include only a first transparent conductive layer 0211, a reflective conductive layer 0212, and a second transparent conductive layer 0214 sequentially disposed on the base substrate 01. In this case, the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the second transparent conductive layer 0214 in the first electrode 021 in the pixel structure 02. The thickness of the second transparent conductive layer 0214 in two pixel structures 02 emitting different light differs. In this case, the wavelength of the light emitted by the pixel structure is positively correlated with the thickness of the second transparent conductive layer in the pixel structure.

[0104] The thickness of the second transparent conductive layer in the red pixel structure 02 may be 100 nanometers, the thickness of the second transparent conductive layer in the green pixel structure 02 may be 26 nanometers, and the thickness of the second transparent conductive layer in the blue pixel structure 02 may be 130 nanometers.

[0105] Figure 10 A schematic structural diagram of a sixth display panel provided by an embodiment of the present invention, Figure 10 A fifth possible implementation of the display panel is shown.

[0106] like Figure 10 As shown, in Figure 2On the basis of the display panel shown, the thickness of the insulating layer 0213 in the two pixel structures 02 that emit different light can be the same. In addition, at least one of the electron injection layer B4, the electron transport layer (such as the first electron transport layer 029 and the second electron transport layer B3), the hole injection layer (such as the first hole injection layer 027 and the second hole injection layer B1) and the hole transport layer (such as the first hole transport layer 028 and the second hole transport layer B2) in the OLED is a functional film layer, and the thickness of the functional film layer in the two OLEDs that emit different light is different. In the embodiment of the present invention, taking the functional film layer including the electron injection layer B4 as an example, the thickness of the electron injection layer B4 in the two OLEDs that emit different light is different. Optionally, the functional film layer may also include other film layers (such as the first hole injection layer 027, etc.), which is not limited in the embodiment of the present invention. At this time, the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the functional film layer in the pixel structure 02.

[0107] The display panel provided in the embodiment of the present invention will be compared with the display panel provided in the related art.

[0108] For example, related art provides two OLED display panels. One OLED display panel includes a base substrate on which multiple OLEDs are disposed. A color resist layer is also disposed on a side of the multiple OLEDs away from the base substrate. The multiple OLEDs are all capable of emitting white light, and the color resist layer includes multiple colored color resist blocks arranged in a one-to-one correspondence with the multiple OLEDs.

[0109] However, since the light emitted by the OLED is white light, and less of the white light can pass through the color blocks, for example, less red light can pass through the red color block, less green light can pass through the green color block, and less blue light can pass through the blue color block. Therefore, the color of the light emitted by the display panel is relatively light, and the color purity of the light emitted by the display panel is low. In the embodiment of the present invention, since the color of the light emitted by the OLED is the same as the color of the color block corresponding to the OLED, that is, more of the light emitted by the OLED can pass through the color block, the color of the light emitted by the display panel is relatively dark, and the color purity of the light emitted by the display panel is high.

[0110] Figure 11 A structural diagram of another OLED display panel provided for related technology, such as Figure 11 As shown, the OLED display panel 1 includes a base substrate 10 , on which a plurality of OLEDs 11 are arranged. Each OLED 11 can emit light of one color, and the plurality of OLEDs 11 can emit red light, green light, and blue light.

[0111] However, the wavelength range of light emitted by each OLED 11 is relatively wide, and this light is often mixed with light of other colors. For example, a particular OLED 11 is required to emit red light, but the light emitted by this OLED 11 is often mixed with some yellow light. As a result, the purity of the light emitted by each OLED 11 is relatively low. In the embodiments of the present invention, a color block is provided on the side of each OLED away from the base substrate. This block can filter the light emitted by the OLED, thereby removing light of other colors mixed in, and improving the purity of the light emitted by the display panel.

[0112] It should also be noted that in the manufacture of Figure 11 The display panel shown requires the use of a high-precision metal mask (FMM). However, due to the limited accuracy of the FMM, the related art cannot produce OLEDs with a small orthographic projection area on the substrate, resulting in a smaller number of pixels per inch (PPI) in the display panel.

[0113] However, when manufacturing the display panel provided by the embodiment of the present invention, no FMM is required. Therefore, the manufacturing process of the display panel is not limited by the FMM. As a result, the display panel provided by the embodiment of the present invention has a higher PPI. For example, the PPI of the display panel provided by the embodiment of the present invention can reach 6000, while the PPI of the display panel in the related art is less than 6000, such as a PPI of about 2000.

[0114] In addition, the display panel provided by the embodiment of the present invention can achieve a color gamut greater than 100% in the color gamut standard established by NTSC.

[0115] It should be noted that the arrangement order of the light-emitting layers in the pixel structure in the embodiment of the present invention is only an example. Optionally, the arrangement order of the light-emitting layers can be adjusted, and the embodiment of the present invention does not limit this.

[0116] To summarize, since the display panel provided by the embodiment of the present invention includes: multiple pixel structures and color resist layers, and each OLED is used to emit light of the same color as the corresponding color resist block, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0117] Figure 12 A flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention. The method can be used to manufacture Figure 1 、 Figure 2 、 Figure 5 、 Figure 8 、 Figure 9 and Figure 10 Any of the display panels shown. Figure 12 As shown, the manufacturing method of the display panel may include:

[0118] Step 1201: Provide a base substrate.

[0119] Step 1202: forming a plurality of pixel structures on a base substrate.

[0120] Step 1203: forming a color resist layer on a side of the plurality of pixel structures away from the base substrate.

[0121] Among them, the color resist layer includes multiple color resist blocks arranged in a one-to-one correspondence with multiple pixel structures, each pixel structure in the multiple pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the corresponding color resist block.

[0122] In summary, since the display panel manufactured by the method provided in the embodiment of the present invention includes: multiple pixel structures and color resist layers, and each OLED is used to emit light of the same color as the corresponding color resist block, therefore, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0123] It should be noted that the display panel manufactured by the method provided in the embodiment of the present invention can be implemented in a variety of ways, for example, Figure 2 、 Figure 5 、 Figure 8 、 Figure 9 and Figure 10 The manufacturing methods of the display panels in these implementations are similar, and in the embodiment of the present invention, only the manufacturing method of the display panels is shown in FIG. Figure 2 The display panel shown in FIG. 1 is taken as an example for explanation.

[0124] For example, in manufacturing Figure 2 When the display panel is shown, Figure 13 As shown, step 1202 may include:

[0125] Step 12021: Form a first transparent conductive layer and a reflective conductive layer in sequence on the base substrate.

[0126] Optional, such as Figure 14 As shown, when manufacturing the first transparent conductive layer 0211, a layer of transparent conductive material can be deposited on the base substrate 01 by coating, magnetron sputtering, thermal evaporation or plasma enhanced chemical vapor deposition (PECVD) to obtain a transparent conductive material layer ( Figure 14(not shown), and then the transparent conductive material layer is processed by a single patterning process to obtain the first transparent conductive layer 0211.

[0127] Among them, a single patterning process includes: photoresist coating, exposure, development, etching and photoresist stripping. Therefore, using a single patterning process to process the transparent conductive material layer includes: coating a layer of photoresist on the transparent conductive material layer, and then using a mask to expose the photoresist so that the photoresist forms a completely exposed area and a non-exposed area, and then using a development process to remove the photoresist in the completely exposed area and retain the photoresist in the non-exposed area, and then etching the corresponding area of ​​the completely exposed area on the transparent conductive material layer. After the etching is completed, the photoresist in the non-exposed area is stripped off to obtain the first transparent conductive layer 0211.

[0128] After forming the first transparent conductive layer 0211, a reflective conductive material layer ( Figure 14 (not shown), and then the reflective conductive material layer is processed by a single patterning process to obtain Figure 14 The reflective conductive layer 0212 is shown.

[0129] Step 12022: forming an insulating layer on the base substrate on which the first transparent conductive layer and the reflective conductive layer are formed.

[0130] It should be noted that a plurality of pixel structures capable of emitting light of various colors need to be formed on the substrate, and Figure 2 The OLED in the display panel shown adjusts the color of the light emitted by the OLED by adjusting the thickness of the insulating layer. Therefore, insulating layers having various thicknesses need to be formed on the base substrate in step 12022. For example, an OLED capable of emitting red light, an OLED capable of emitting green light, and an OLED capable of emitting blue light need to be formed on the base substrate. Therefore, insulating layers having three different thicknesses need to be formed on the base substrate in step 12022. For example, the insulating layer thickness of the OLED emitting red light is the greatest, and the insulating layer thickness of the OLED emitting blue light is the smallest.

[0131] The process of forming the insulating layer on the substrate can be as follows: Figures 15 to 18 Please combine Figures 15 to 18 When forming the insulating layer 0213, an insulating material layer and a photoresist layer can be formed in sequence on the base substrate 01 on which the first transparent conductive layer 0211 and the reflective conductive layer 0212 are formed. Figures 15 to 18 The insulating material layer and the photoresist layer are not shown in the figure).

[0132] Then, the photoresist layer is exposed using a mask to form a completely exposed area and a non-exposed area in the photoresist layer, wherein the non-exposed area is the area corresponding to the reflective conductive layer 0212 in the photoresist layer. Then, a development process is used to remove the photoresist in the completely exposed area and retain the photoresist in the non-exposed area. Then, the area corresponding to the completely exposed area on the insulating material layer is etched. After the etching is completed, the photoresist in the non-exposed area is peeled off to obtain the following. Figure 15 The first insulation layer pattern C1 and the first photoresist pattern C2 are shown.

[0133] Furthermore, after obtaining the first insulating layer pattern C1 and the first photoresist pattern C2, the first photoresist pattern C2 can be exposed and developed using a half-tone mask to remove the photoresist in the region where the insulating layer with the smallest thickness is to be formed, and to thin the photoresist in the region where the insulating layer with the second smallest thickness is to be formed, thereby obtaining the following: Figure 16 The second photoresist pattern C3 shown in FIG. The second photoresist pattern C3 includes a first thickness region C31, a second thickness region C32, and a photoresist completely removed region C33. The photoresist thickness in the first thickness region C31 is greater than that in the second thickness region C32. The first thickness region C31 corresponds to the region in the second photoresist pattern C3 where the insulating layer with the maximum thickness is to be formed.

[0134] Afterwards, the first insulating layer pattern C1 can be etched using the second photoresist pattern C3 as a mask, such as by dry etching. During the etching process, the first insulating layer pattern C1 corresponding to the photoresist completely removed area C33 is thinned, and the second thickness area C32 and its corresponding first insulating layer pattern C1 are both thinned. Afterwards, the first thickness area C31 is stripped off, thereby obtaining the following: Figure 17 The second insulation layer pattern C4 is shown.

[0135] Finally, if Figure 18 As shown, a via C5 can be formed in the second insulating layer pattern C4, thereby obtaining three thicknesses of insulating layer 0213. These three thicknesses of insulating layer 0213 correspond to the first thickness region C31, the second thickness region C32, and the photoresist completely removed region C33 in the second photoresist pattern C3.

[0136] Optionally, step 12022 may also be implemented in other ways, such as three insulating layers of different thicknesses may be formed in sequence, which is not limited in this embodiment of the present invention.

[0137] Step 12023: A second transparent insulating layer, a first hole injection layer, a first hole transport layer, a red light-emitting layer, a green light-emitting layer, a first electron transport layer, a first electrical connection layer, a second hole injection layer, a second hole transport layer, a blue light-emitting layer, a second electron transport layer, an electron injection layer and a second electrode are formed in sequence on the base substrate having an insulating layer.

[0138] The formation process of each film layer that needs to be formed in step 12023 can include: coating the material layer of the film layer, and then processing the material layer through a composition process. This process can refer to the process of manufacturing the first transparent conductive layer or reflective conductive layer in step 12021.

[0139] After sequentially forming the second transparent insulating layer, the first hole injection layer, the first hole transport layer, the red light emitting layer, the green light emitting layer, the first electron transport layer, the first electrical connection layer, the second hole injection layer, the second hole transport layer, the blue light emitting layer, the second electron transport layer, the electron injection layer and the second electrode, the following can be obtained: Figure 19 The structure shown. For example, Figure 19 The structure shown includes: a red light pixel structure capable of emitting red light, a green light pixel structure capable of emitting green light, and a blue light pixel structure capable of emitting blue light.

[0140] It should be noted that after the multiple pixel structures are manufactured, a TFE layer needs to be formed on the base substrate on which the multiple pixel structures are formed. In step 1203 , a color resist layer may be formed on the TFE layer.

[0141] In summary, since the display panel manufactured by the method provided in the embodiment of the present invention includes: multiple pixel structures and color resist layers, and each OLED is used to emit light of the same color as the corresponding color resist block, therefore, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0142] An embodiment of the present invention provides a display device, which may include Figure 1 、 Figure 2 、 Figure 5 、 Figure 8 、 Figure 9 and Figure 10 Any of the display panels shown. For example, the display device can be: electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigation system, or any other product or component with a display function.

[0143] It should be noted that the method embodiments provided in the embodiments of the present invention can be referenced in conjunction with the corresponding display panel and display device embodiments, and the embodiments of the present invention are not limited thereto. The order of the steps in the method embodiments provided in the embodiments of the present invention can be appropriately adjusted, and the steps can be increased or decreased accordingly. Any method that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be covered by the scope of protection of the present invention, and therefore will not be described in detail.

[0144] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A display panel, characterized in that: The display panel includes: A base substrate, wherein a plurality of pixel structures are disposed on the base substrate, a color resist layer is disposed on a side of the plurality of pixel structures away from the base substrate, the color resist layer comprising a plurality of color resist blocks arranged in a one-to-one correspondence with the plurality of pixel structures, the orthographic projections of the color resist blocks on the base substrate overlapping with the orthographic projections of the corresponding pixel structures on the base substrate, and the color resist layer further comprising a black matrix located between the plurality of color resist blocks; Each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the color block corresponding to it; The pixel structure includes: a first electrode, a plurality of electroluminescent structures, and a second electrode sequentially arranged on the substrate, wherein the first electrode includes a reflective conductive layer, the second electrode includes a semi-transmissive and semi-reflective conductive layer, the first electrode is an anode, and the second electrode is a cathode; The first electrode comprises at least a first transparent conductive layer, the reflective conductive layer and a second transparent conductive layer on the base substrate; The display panel further includes a resonant cavity located in each of the pixel structures, wherein the resonant cavity includes the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer; The pixel structure also includes a functional film layer located between the first electrode and the second electrode, and the functional film layer includes: at least one film layer of an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer. The wavelength of light emitted by the pixel structure is positively correlated with the thickness of the functional film layer in the pixel structure.

2. The display panel according to claim 1, wherein: The plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light; The cavity length of the resonant cavity in the red light pixel structure is greater than the cavity length of the resonant cavity in the blue light pixel structure.

3. The display panel according to claim 1, wherein: The plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light; The cavity length of the resonant cavity in the green light pixel structure is greater than the cavity length of the resonant cavity in the blue light pixel structure.

4. The display panel according to claim 1, wherein: The first electrode further includes an insulating layer located between the reflective conductive layer and the second transparent conductive layer, and the second transparent conductive layer is connected to the reflective conductive layer through a via hole on the insulating layer.

5. The display panel according to claim 4, wherein: The material of the insulating layer includes inorganic material.

6. The display panel according to claim 5, wherein: The insulating layer is made of silicon dioxide.

7. The display panel according to claim 1, wherein: The black matrix is ​​located between the plurality of color resist blocks in a first direction, and the first direction is an arrangement direction of the plurality of color resist blocks.

8. The display panel according to claim 1, wherein: The pixel structure includes a series-connected OLED consisting of a plurality of electroluminescent structures.

9. The display panel according to claim 8, wherein: The pixel structure includes: a red light-emitting layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer sequentially arranged on the base substrate. The first electroluminescent structure includes the red light-emitting layer and the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer; the first electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer.

10. The display panel according to claim 8, wherein The pixel structure includes: a red light-emitting layer, a second electrical connection layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer arranged in sequence on the base substrate. The third electroluminescent structure includes the red light-emitting layer, the fourth electroluminescent structure includes the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer; The third electroluminescent structure and the fourth electroluminescent structure are connected in series via the second electrical connection layer, and the fourth electroluminescent structure and the second electroluminescent structure are connected in series via the first electrical connection layer.

11. The display panel according to any one of claims 8 to 10, characterized in that: The distance between the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer is the cavity length of the resonant cavity, and the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure.

12. The display panel according to claim 11, wherein: The wavelength of light emitted by the pixel structure is positively correlated with the thickness of the insulating layer in the pixel structure.

13. The display panel according to claim 11, wherein: The first electrode includes: a first transparent conductive layer, the reflective conductive layer, and a second transparent conductive layer sequentially arranged on the base substrate; the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the second transparent conductive layer in the pixel structure.

14. The display panel according to claim 11, wherein: The cavity length of the resonant cavity in the pixel structure is Wherein, k is the cavity length coefficient and is an integer, λ is the wavelength of light emitted by the pixel structure, n is the average refractive index of the medium in the resonant cavity, and θ is the reflection angle of light reflected on the conductive layer in the pixel structure.

15. The display panel according to claim 14, wherein: The plurality of pixel structures include: a red pixel structure for emitting red light, a green pixel structure for emitting green light, and a blue pixel structure for emitting blue light. The cavity length of the first resonant cavity in the red pixel structure corresponds to k i, the cavity length of the second resonant cavity in the green pixel structure corresponds to k i, and the cavity length of the third resonant cavity in the blue pixel structure corresponds to k i, i≥1.

16. The display panel according to claim 14, wherein: The plurality of pixel structures include: a red pixel structure for emitting red light, a green pixel structure for emitting green light, and a blue pixel structure for emitting blue light. The cavity length of the first resonant cavity in the red pixel structure corresponds to k j, the cavity length of the second resonant cavity in the green pixel structure corresponds to k j, and the cavity length of the third resonant cavity in the blue pixel structure corresponds to k j+1, j ≥ 1.

17. The display panel according to claim 1, wherein: The display panel further includes a thin film encapsulation layer located on a side of the plurality of pixel structures away from the base substrate.

18. The display panel according to claim 1, wherein At least one of the first transparent conductive layer and the second transparent conductive layer is made of indium tin oxide.

19. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 18.

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