Display panel and manufacturing method thereof, and display device

Abstract

The present application discloses a display panel and a manufacturing method thereof, and a display device, and belongs to the field of display technology. The display panel includes: a base substrate, a plurality of pixel structures are arranged on the base substrate, a color resist layer is arranged on the side of the plurality of pixel structures away from the base substrate, and the color resist layer includes a plurality of color resist blocks arranged one by one corresponding to the plurality of pixel structures; each of the plurality of pixel structures emits light of a color, and the color of the light emitted by each pixel structure is the same as the color of the color resist block arranged corresponding to it. The present application solves the problem of poor display effect of the display panel, improves the display effect of the display panel, and the present application is used for the display panel.

Description

[0001] This application is a divisional application of the invention patent application with the application date of May 9, 2018, application number: 201810438219.8, and invention name: "Display panel and its manufacturing method, display device". Technical Field

[0002] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0003] With the development of display technology, organic light-emitting diode (OLED) display panels have been widely used.

[0004] An OLED display panel generally includes a substrate, on which a plurality of OLEDs are arranged, and a color resist layer is further arranged on a side of the plurality of OLEDs away from the substrate. For example, the plurality of OLEDs can all emit white light, and the color resist layer includes a plurality of color resist blocks arranged in a one-to-one correspondence with the plurality of OLEDs, and the plurality of color resist blocks include: a red color resist block, a green color resist block, and a blue color resist block. Each color resist block only allows light of a specified wavelength in the incident white light to pass through, such as a red color resist block only allows red light to pass through, a green color resist block only allows green light to pass through, and a blue color resist block only allows blue light to pass through, so that the OLED display panel emits colored light.

[0005] However, the color purity of the colored light emitted by the OLED display panel in the related art is low, and the display effect of the OLED display panel is poor. Summary of the invention

[0006] The present application provides a display panel and a manufacturing method thereof, and a display device, which can solve the problem of poor display effect of the display panel. The technical solution is as follows:

[0007] In one aspect, a display panel is provided, the display panel comprising: a substrate;

[0008] A plurality of pixel structures are arranged on the base substrate, a color resist layer is arranged on a side of the plurality of pixel structures away from the base substrate, and the color resist layer includes a plurality of color resist blocks arranged in one-to-one correspondence with the plurality of pixel structures;

[0009] Each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the color block corresponding to it.

[0010] Optionally, the pixel structure includes a series-connected OLED consisting of a plurality of electroluminescent structures.

[0011] Optionally, the pixel structure includes: a red light-emitting layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer sequentially arranged on the base substrate,

[0012] The first electroluminescent structure includes the red light-emitting layer and the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer; the first electroluminescent structure and the second electroluminescent structure are connected in series via the first electrical connection layer.

[0013] Optionally, the pixel structure includes: a red light-emitting layer, a second electrical connection layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer sequentially arranged on the base substrate,

[0014] The third electroluminescent structure includes the red light-emitting layer, the fourth electroluminescent structure includes the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer;

[0015] The third electroluminescent structure is connected in series with the fourth electroluminescent structure via the second electrical connection layer, and the fourth electroluminescent structure is connected in series with the second electroluminescent structure via the first electrical connection layer.

[0016] Optionally, the pixel unit further includes: a first electrode, the plurality of electroluminescent structures, and a second electrode sequentially arranged on the base substrate.

[0017] The first electrode comprises a reflective conductive layer, the second electrode comprises a semi-transmissive and semi-reflective conductive layer, and the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer form a resonant cavity;

[0018] The distance between the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer is the cavity length of the resonant cavity, and the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure.

[0019] Optionally, the first electrode comprises: a first transparent conductive layer, the reflective conductive layer, an insulating layer and a second transparent conductive layer sequentially arranged on the base substrate;

[0020] The second transparent conductive layer is connected to the reflective conductive layer through a via hole on the insulating layer, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the insulating layer in the pixel structure.

[0021] Optionally, the first electrode includes: a first transparent conductive layer, the reflective conductive layer and a second transparent conductive layer arranged in sequence on the base substrate; the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the second transparent conductive layer in the pixel structure.

[0022] Optionally, the pixel structure also includes a functional film layer located between the first electrode and the second electrode, and the functional film layer includes: at least one film layer of an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the functional film layer in the pixel structure.

[0023] Optionally, the cavity length of the resonant cavity in the pixel structure is

[0024] Wherein, k is an integer, λ is the wavelength of light emitted by the pixel structure, n is the average refractive index of the medium in the resonant cavity, and θ is the reflection angle of light reflected on the conductive layer in the pixel structure.

[0025] Optionally, the plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light.

[0026] The cavity length of the first resonant cavity in the red light pixel structure corresponds to k i, the cavity length of the second resonant cavity in the green light pixel structure corresponds to k i, and the cavity length of the third resonant cavity in the blue light pixel structure corresponds to k i, i≥1.

[0027] Optionally, the plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light.

[0028] The k corresponding to the cavity length of the first resonant cavity in the red light pixel structure is j, the k corresponding to the cavity length of the second resonant cavity in the green light pixel structure is j, and the k corresponding to the cavity length of the third resonant cavity in the blue light pixel structure is j+1, j≥1.

[0029] In another aspect, a method for manufacturing a display panel is provided, the method comprising:

[0030] Providing a substrate;

[0031] forming a plurality of pixel structures on the base substrate;

[0032] Forming a color resist layer on a side of the plurality of pixel structures away from the base substrate;

[0033] Among them, the color resist layer includes a plurality of color resist blocks arranged one-to-one corresponding to the plurality of pixel structures, each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the corresponding color resist block.

[0034] Optionally, a plurality of pixel structures are formed on the substrate, including:

[0035] When forming each pixel structure, a red light-emitting layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer are sequentially formed on the base substrate;

[0036] The red light-emitting layer and the green light-emitting layer form a first electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure; the first electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer, and the multiple color light-emitting layers are connected in series with each other.

[0037] Optionally, a plurality of pixel structures are formed on the substrate, including:

[0038] When forming each pixel structure, a red light-emitting layer, a second electrical connection layer, a green light-emitting layer, a first electrical connection layer and a blue light-emitting layer are sequentially formed on the base substrate;

[0039] Among them, the red light-emitting layer forms a third electroluminescent structure, the green light-emitting layer forms a fourth electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure; the third electroluminescent structure and the fourth electroluminescent structure are connected in series through the second electrical connection layer, and the fourth electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer.

[0040] On the other hand, a display device is provided, comprising the above-mentioned display panel.

[0041] The beneficial effects of the technical solution provided by this application include at least:

[0042] The display panel provided by the embodiment of the present invention includes: multiple pixel structures and a color resist layer, and each OLED is used to emit light of the same color as the corresponding color resist block. Therefore, more light among the light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0044] Figure 1 A schematic structural diagram of a first display panel provided by an embodiment of the present invention;

[0045] Figure 2 A schematic diagram of the structure of a second display panel provided by an embodiment of the present invention;

[0046] Figure 3 is a graph showing the relationship between the intensity and wavelength of light of the second display panel;

[0047] Figure 4 is a color gamut diagram of the second display panel;

[0048] Figure 5 A schematic structural diagram of a third display panel provided by an embodiment of the present invention;

[0049] Figure 6 is a graph showing the relationship between the intensity and wavelength of light of the third display panel;

[0050] Figure 7 is a color gamut diagram of the third display panel;

[0051] Figure 8 A schematic structural diagram of a fourth display panel provided by an embodiment of the present invention;

[0052] Fig. 9 A schematic structural diagram of a fifth display panel provided by an embodiment of the present invention;

[0053] Fig.10 A schematic structural diagram of a sixth display panel provided by an embodiment of the present invention;

[0054] Fig.11 A schematic diagram of the structure of a display panel provided for related technology;

[0055] Fig.12 is a flow chart of a method for manufacturing a display panel according to an embodiment of the present invention;

[0056] Fig.13 A flow chart of a method for manufacturing an OLED provided by an embodiment of the present invention;

[0057] Fig.14 A schematic diagram of a first process for manufacturing an OLED provided by an embodiment of the present invention;

[0058] Fig.15 A schematic diagram of a second process for manufacturing an OLED provided by an embodiment of the present invention;

[0059] Fig.16 A schematic diagram of a third process for manufacturing an OLED provided by an embodiment of the present invention;

[0060] Fig.17 A schematic diagram of a fourth process for manufacturing an OLED provided by an embodiment of the present invention;

[0061] Fig.18 A schematic diagram of a fifth process for manufacturing an OLED provided by an embodiment of the present invention;

[0062] Fig.19 This is a schematic diagram of a sixth process for manufacturing an OLED provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0063] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0064] The display device has been widely used due to its fast response speed, full solidification and self-luminescence, etc. For example, the display device can be used in the field of flexible display, transparent display and micro display, etc.

[0065] Among them, the application of display devices in the micro-display field may include: augmented reality technology (English: AugmentedReality; abbreviated: AR) display, helmet display, stereo display mirror and eyeglass display, etc., and the micro-display field requires the display device to have high color purity, brightness (such as brightness greater than 1500 nits) and color gamut. The embodiment of the present invention provides a display device, the display panel in the display device can be applied to the micro-display field, and the display device can also be applied to other display fields, which is not limited by the embodiment of the present invention.

[0066] Figure 1 A schematic diagram of the structure of a first display panel provided by an embodiment of the present invention is shown in FIG. Figure 1 As shown, the display panel 0 may include: a base substrate 01 .

[0067] A plurality of pixel structures 02 are arranged on a base substrate 01, and a color resist layer 03 is arranged on a side of the plurality of pixel structures 02 away from the base substrate 01, and the color resist layer 03 includes a plurality of color resist blocks 031 arranged one-to-one corresponding to the plurality of pixel structures 02. Each pixel structure 02 in the plurality of pixel structures 02 emits light of one color, and for each pixel structure 02 in the plurality of pixel structures 02, the color of the light emitted by the pixel structure 02 is the same as the color of the color resist block 031 arranged corresponding to it.

[0068] It should be noted that each color block 031 corresponds to a color. The color block 031 only allows light of the corresponding color to pass through, and prohibits light of non-corresponding colors to pass through. The color of the color block 031 is also the color corresponding to the color block.

[0069] To summarize, since the display panel provided by the embodiment of the present invention includes: multiple pixel structures and a color resist layer, and each OLED is used to emit light of the same color as the corresponding color resist block, more light among the light emitted by the pixel structure can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0070] Optionally, the material of the substrate may be silicon, or other materials such as glass, which is not limited in the embodiment of the present invention.

[0071] Optionally, the pixel structure 02 in the display panel 0 may also be a microcavity OLED, that is, the pixel structure 02 may include: a first electrode, a plurality of electroluminescent structures, and a second electrode sequentially arranged on a substrate. The first electrode (such as an anode) close to the substrate of the two electrodes of the pixel structure 02 includes a reflective conductive layer, and the second electrode (such as a cathode) far from the substrate includes a semi-transparent and semi-reflective conductive layer, and the two electrodes can form a resonant cavity. The distance between the reflective conductive layer and the semi-transparent and semi-reflective conductive layer is the cavity length of the resonant cavity, and the wavelength of the light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure. It should be noted that the light emitted by all the light-emitting layers in the pixel structure 02 can form white light, and the resonant cavity can screen a certain color of light in the white light for energy amplification, and weaken the energy of other light different from the color, so that the pixel structure 02 emits the light of the certain color, and the brightness of the light emitted by the pixel structure 02 is high. The pixel structure 02 in the embodiment of the present invention can emit light of the same color as the color color block 031 corresponding to the pixel structure 02 through the resonant cavity.

[0072] Optionally, the pixel structure 02 in the display panel 0 may include a series-type OLED composed of multiple electroluminescent structures. It should be noted that the series-type OLED has a higher luminous efficiency and a higher luminous power. Therefore, the display panel 0 provided in the embodiment of the present invention has a higher luminous efficiency and a higher luminous power.

[0073] For example, the display panel provided by the embodiment of the present invention may have multiple implementation modes, and five of the implementation modes will be described below as examples.

[0074] Figure 2 A schematic diagram of the structure of a second display panel provided by an embodiment of the present invention, Figure 2 A first implementable manner of a display panel is shown, in which a pixel structure 02 in the display panel 0 may include: a first electrode 021, a red light-emitting layer 022, a green light-emitting layer 023, a first electrical connection layer 024, a blue light-emitting layer 025 and a second electrode 026, which are sequentially arranged on a base substrate 01.

[0075] Among them, one of the first electrode 021 and the second electrode 026 may be a cathode, and the other electrode may be an anode. In the embodiment of the present invention, the first electrode 021 is an anode, and the second electrode 026 is a cathode. For example, the first electrode 021 and the second electrode 026 in the OLED form a resonant cavity, and for each OLED, the cavity length d of the resonant cavity in the OLED is related to the wavelength λ of the light emitted by the OLED.

[0076] For example, the relationship between the cavity length d and the wavelength λ can be: 2k(λ / 2)=2ndcosθ, where k is an integer and can be called the cavity length coefficient; n represents the average refractive index of the medium in the resonant cavity, and θ is the reflection angle of the light reflected on the conductive layer in the OLED. Since the wavelength of light is related to the color of light, the cavity length is related to the color of the light emitted by the OLED. By adjusting the cavity length d of the resonant cavity, the color of the light emitted by the OLED can be adjusted. In the display panel 0, the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure, and the cavity lengths of the resonant cavities in the two pixel structures 02 that emit light of different colors are different.

[0077] In the embodiment of the present invention, the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the insulating layer in the first electrode 021 in the pixel structure 02. At this time, the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the insulating layer in the pixel structure.

[0078] For example, the first electrode 021 may include: a first transparent conductive layer 0211, a reflective conductive layer 0212, an insulating layer 0213, and a second transparent conductive layer 0214, which are sequentially arranged on the base substrate 01. In addition, the second transparent conductive layer 0214 is connected to the insulating layer 0213 through a via hole ( Figure 2 The first transparent conductive layer 0211 and the second transparent conductive layer 0214 may be made of indium tin oxide, the reflective conductive layer 0212 may be made of silver, the insulating layer 0213 may be made of silicon dioxide, and the semi-transparent and semi-reflective conductive layer in the second electrode 026 may be made of a semi-transparent and semi-reflective material doped with magnesium and silver. The thickness of the insulating layer 0213 in the two pixel structures 02 that emit different light is different, so that the cavity lengths of the resonant cavities in the two pixel structures 02 that emit different light are different.

[0079] Optionally, k corresponding to the cavity length of the resonant cavity in each pixel structure 02 can be any integer, and when k takes any value, the wavelength of light emitted by the pixel structure is the same. In the embodiment of the present invention, under the premise that the pixel structure 02 emits a certain color of light through the resonant cavity, the cavity length of the resonant cavity in the pixel structure 02 can select the cavity length corresponding to k of any value. When the cavity length of the resonant cavity in the pixel structure 02 is short and the thickness of each film layer in the pixel structure 02 is also thin, the value of k corresponding to the cavity length of the resonant cavity can be appropriately increased to increase the cavity length of the resonant cavity and the thickness of each film layer in the pixel structure 02, so as to facilitate the manufacture of the pixel structure 02.

[0080] For example, Figure 2The multiple pixel structures 02 in the display panel shown may include: a red pixel structure 02 for emitting red light, a green pixel structure 02 for emitting green light, and a blue pixel structure 02 for emitting blue light. The k corresponding to the cavity length of the first resonant cavity in the red pixel structure 02 may be i, the k corresponding to the cavity length of the second resonant cavity in the green pixel structure 02 may be i, the cavity length of the third resonant cavity in the blue pixel structure 02 and the k corresponding to the third resonant cavity may be i, i≥1. That is, the k corresponding to the cavity length of the resonant cavity in these three pixel structures is i. The thickness of the insulating layer in the red pixel structure 02 may be 145 nanometers, the thickness of the insulating layer in the green pixel structure 02 may be 90 nanometers, and the thickness of the insulating layer in the blue pixel structure 02 may be 45 nanometers.

[0081] In addition, please continue to refer to Figure 2 Each pixel structure 02 may also include: a first hole injection layer (HIL) 027, a first hole transport layer (HTL) 028, a first electron transport layer (ETL) 029, a second hole injection layer B1, a second hole transport layer B2, a second electron transport layer B3 and an electron injection layer (EIL) B4. A thin film encapsulation (TFE) layer is also provided between the plurality of pixel structures 02 and the color resist layer 03. Figure 2 (not shown in the figure), the color resist layer 03 further includes: a black matrix 032 located between the color resist blocks 031.

[0082] Among them, the thickness of the first transparent conductive layer 0211 can be 80 angstroms, the thickness of the reflective conductive layer 0212 can be 1000 angstroms, the thickness of the second transparent conductive layer 0214 can be 80 angstroms, the thickness of the first hole injection layer 027 can be 100 angstroms, the thickness of the first hole transport layer 028 can be 150 angstroms, the thickness of the red light-emitting layer 022 can be 100 angstroms, the thickness of the green light-emitting layer 023 can be 300 angstroms, the thickness of the first electron transport layer 029 can be 200 angstroms, the thickness of the first electrical connection layer 024 can be 150 angstroms, the thickness of the second hole injection layer B1 can be 100 angstroms, the thickness of the second hole transport layer B2 can be 100 angstroms, the thickness of the blue light-emitting layer 025 can be 250 angstroms, the thickness of the second electron transport layer B3 can be 300 angstroms, the thickness of the electron injection layer B4 can be 100 angstroms, and the thickness of the second electrode 026 can be 120 angstroms.

[0083] Furthermore, Figure 2Each pixel structure 02 in the display panel 0 shown may include a tandem OLED (also called a stacked OLED). Figure 2 In each pixel structure 02, the red light-emitting layer 022 is used to emit red light, the green light-emitting layer 023 is used to emit green light, and the blue light-emitting layer 025 is used to emit blue light. The red light-emitting layer 022 and the green light-emitting layer 023 are superimposed together to form an electroluminescent structure, and the blue light-emitting layer 025 independently forms an electroluminescent structure. The two electroluminescent structures are electrically connected through the first electrical connection layer 024 located between the green light-emitting layer 023 and the blue light-emitting layer 025 to achieve the series connection of the two electroluminescent structures. That is, the red light-emitting layer and the green light-emitting layer form a first electroluminescent structure, and the blue light-emitting layer forms a second electroluminescent structure. The first electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer.

[0084] right Figure 2 The display panel provided is simulated, and the following results can be obtained: Figure 3 The horizontal axis of the graph represents the wavelength of light in nanometers, and the vertical axis of the graph represents the intensity of light (dimensionless). Figure 3 , the wavelength of red light emitted by the display panel is concentrated around 600 nanometers, the wavelength of green light is concentrated around 520 nanometers, and the wavelength of blue light is concentrated around 450 nanometers.

[0085] right Figure 2 The simulation of the provided display panel can also obtain the parameters shown in Table 1. Please refer to Table 1. The reddest light emitted by the display panel has a CIEx (i.e., the color coordinate x in the color gamut diagram established by CIE) of 0.650, a CIEy (i.e., the color coordinate y in the color gamut diagram established by CIE) of 0.341, and a CIEY (i.e., the brightness in the colorimetry standard established by CIE) of 66.0 in the colorimetry standard established by the International Commission on Illumination (English: Commission Internationale de L'Eclairage; abbreviated as: CIE); the greenest light emitted by the display panel has a CIEx of 0.117, a CIEy of 0.771, and a CIEY of 79.6; the bluest light emitted by the display panel has a CIEx of 0.146, a CIEy of 0.032, and a CIEY of 66.8.

[0086] Table 1

[0087] Color of Light CIEx CIE CIEY red 0.650 0.341 66.0 green 0.117 0.771 79.6 blue 0.146 0.032 66.8

[0088] According to the color coordinates in Table 1, the color gamut of the display panel in the color gamut diagram formulated by CIE can be obtained (such as Figure 4It can be seen that the display panel provided by the embodiment of the present invention achieves a color gamut of 120% in the color gamut standard established by the National Television Standards Committee (NTSC).

[0089] Optionally, in order to increase the brightness of the light emitted by the display panel, the transmittance of the color block in the embodiment of the present invention can be 50% to 60%, or a transmittance higher than 60%, which is not limited in the embodiment of the present invention. The total brightness of all light emitted by the display panel can reach 2500 nits. However, the transmittance of the color block in the related art is often low, so the total brightness of all light emitted by the display panel in the related art is low, such as the total brightness is usually 300 nits.

[0090] It can be seen that the display panel provided by the embodiment of the present invention has higher brightness, higher color gamut and higher color purity, and the display panel can meet the requirements of the micro-display field for display devices.

[0091] Figure 5 A schematic diagram of the structure of a third display panel provided by an embodiment of the present invention, Figure 5 A second possible implementation of the display panel is shown.

[0092] like Figure 5 As shown, in Figure 2 On the basis of the display panel shown, the k corresponding to the cavity length of the first resonant cavity in the red pixel structure 02 may be j, the k corresponding to the cavity length of the second resonant cavity in the green pixel structure 02 may be j, and the k corresponding to the cavity length of the third resonant cavity in the blue pixel structure 02 may be j+1, j≥1. Optionally, i and j may be equal or unequal, the thickness of the insulating layer in the red pixel structure 02 may be 90 nanometers, the thickness of the insulating layer in the green pixel structure 02 may be 18 nanometers, and the thickness of the insulating layer in the blue pixel structure 02 may be 120 nanometers.

[0093] right Figure 5 The display panel provided is simulated, and the following results can be obtained: Figure 6 The horizontal axis of the graph represents the wavelength of light in nanometers, and the vertical axis of the graph represents the intensity of light in W·m -2 ·nm -1 ·sr -1 Please refer to Figure 6 , the wavelength of red light emitted by the display panel is concentrated around 620 nanometers, the wavelength of green light is concentrated around 520 nanometers, and the wavelength of blue light is concentrated around 460 nanometers.

[0094] right Figure 5The simulation of the provided display panel can also obtain the parameters shown in Table 2. Please refer to Table 2. The CIEx of the reddest light emitted by the display panel is 0.673, the CIEy is 0.341, and the CIEY is 67.3; the CIEx of the greenest light emitted by the display panel is 0.157, the CIEy is 0.740, and the CIEY is 68.9; the CIEx of the bluest light emitted by the display panel is 0.142, the CIEy is 0.048, and the CIEY is 26.8.

[0095] Table 2

[0096] Color of light CIEx CIE CIEY red 0.673 0.341 67.3 green 0.157 0.740 68.9 blue 0.142 0.048 26.8

[0097] According to the color coordinates in Table 2, the color gamut of the display panel in the color gamut diagram formulated by CIE can be obtained (such as Figure 7 It can be seen that the display panel provided by the embodiment of the present invention achieves a color gamut of 115% in the color gamut standard established by NTSC. In addition, the total brightness of all light emitted by the display panel can reach 2200 nits.

[0098] Figure 8 A schematic diagram of the structure of a fourth display panel provided by an embodiment of the present invention, Figure 8 A third possible implementation of the display panel is shown.

[0099] like Figure 8 As shown, in Figure 5 Based on the display panel shown in FIG. 1 , the multiple electroluminescent structures in each pixel structure 02 can also be connected with Figure 5 The multiple electroluminescent structures in are different. For example, Figure 8 In each pixel structure 02 shown, the red light-emitting layer 022 independently forms an electroluminescent structure, the green light-emitting layer 023 independently forms another electroluminescent structure, and the blue light-emitting layer 025 independently forms another electroluminescent structure. At this time, a second electrical connection layer B5 may be provided between the red light-emitting layer 022 and the green light-emitting layer 023, and the red light-emitting layer 022 may be electrically connected to the green light-emitting layer 023 through the second electrical connection layer B5, and the green light-emitting layer 023 may be electrically connected to the blue light-emitting layer 025 through the first electrical connection layer 024, so as to realize the series connection of these three electroluminescent structures. That is, the red light-emitting layer forms the third electroluminescent structure, the green light-emitting layer forms the fourth electroluminescent structure, and the blue light-emitting layer forms the second electroluminescent structure; the third electroluminescent structure and the fourth electroluminescent structure are connected in series through the second electrical connection layer, and the fourth electroluminescent structure and the second electroluminescent structure are connected in series through the first electrical connection layer.

[0100] Please continue to refer to Figure 8The second electrical connection layer B5 may be composed of a second electron transport layer B6, a third hole injection layer B7 and a third hole transport layer B8 which are stacked in sequence, and the electron transport layer is arranged close to the red light emitting layer 022. The thickness of the second electron transport layer B6 may be 300 angstroms, the thickness of the third hole injection layer B7 may be 100 angstroms, and the thickness of the third hole transport layer B8 may be 150 angstroms.

[0101] right Figure 8 The provided display panel is simulated to obtain the color gamut achieved by the display panel in the color gamut standard established by NTSC, the total brightness of all light emitted by the display panel, and the color purity of the light emitted by the display panel. In the third possible implementation, the color gamut, total brightness and color purity of the display panel are all high.

[0102] Fig. 9 A schematic diagram of the structure of a fifth display panel provided by an embodiment of the present invention, Fig. 9 A fourth possible implementation of the display panel is shown.

[0103] like Fig. 9 As shown, in Figure 2 On the basis of the display panel shown, the first electrode 021 in each pixel structure 02 may not include an insulating layer, but only include a first transparent conductive layer 0211, a reflective conductive layer 0212, and a second transparent conductive layer 0214 sequentially arranged on the base substrate 01. In this case, the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the second transparent conductive layer 0214 in the first electrode 021 in the pixel structure 02. The thickness of the second transparent conductive layer 0214 in the two pixel structures 02 emitting different light is different. In this case, the wavelength of the light emitted by the pixel structure is positively correlated with the thickness of the second transparent conductive layer in the pixel structure.

[0104] The thickness of the second transparent conductive layer in the red pixel structure 02 may be 100 nanometers, the thickness of the second transparent conductive layer in the green pixel structure 02 may be 26 nanometers, and the thickness of the second transparent conductive layer in the blue pixel structure 02 may be 130 nanometers.

[0105] Fig.10 A schematic diagram of the structure of a sixth display panel provided by an embodiment of the present invention, Fig.10 A fifth possible implementation of the display panel is shown.

[0106] like Fig.10 As shown, in Figure 2On the basis of the display panel shown, the thickness of the insulating layer 0213 in the two pixel structures 02 that emit different light can be the same. In addition, at least one of the electron injection layer B4, the electron transport layer (such as the first electron transport layer 029 and the second electron transport layer B3), the hole injection layer (such as the first hole injection layer 027 and the second hole injection layer B1) and the hole transport layer (such as the first hole transport layer 028 and the second hole transport layer B2) in the OLED is a functional film layer, and the thickness of the functional film layer in the two OLEDs that emit different light is different. In the embodiment of the present invention, taking the functional film layer including the electron injection layer B4 as an example, the thickness of the electron injection layer B4 in the two OLEDs that emit different light is different. Optionally, the functional film layer may also include other film layers (such as the first hole injection layer 027, etc.), which is not limited in the embodiment of the present invention. At this time, the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the functional film layer in the pixel structure 02.

[0107] The display panel provided in the embodiment of the present invention is compared with the display panel provided in the related art.

[0108] For example, the related art provides two OLED display panels, wherein one OLED display panel includes a substrate, a plurality of OLEDs are arranged on the substrate, and a color resist layer is arranged on a side of the plurality of OLEDs away from the substrate. The plurality of OLEDs can emit white light, and the color resist layer includes a plurality of color resist blocks arranged in one-to-one correspondence with the plurality of OLEDs.

[0109] However, since the light emitted by the OLED is white light, and less light in the white light can pass through the color block, such as less red light in the white light can pass through the red color block, less green light in the white light can pass through the green color block, and less blue light in the white light can pass through the blue color block, the color of the light emitted by the display panel is lighter, and the color purity of the light emitted by the display panel is lower. In the embodiment of the present invention, since the color of the light emitted by the OLED is the same as the color of the color block corresponding to the OLED, that is, more light in the light emitted by the OLED can pass through the color block, the color of the light emitted by the display panel is darker, and the color purity of the light emitted by the display panel is higher.

[0110] Fig.11 A schematic diagram of another OLED display panel provided for related technology, such as Fig.11 As shown, the OLED display panel 1 includes a base substrate 10 on which a plurality of OLEDs 11 are arranged. Each OLED 11 can emit light of one color, and the plurality of OLEDs 11 can emit red light, green light and blue light.

[0111] However, the wavelength range of the light emitted by each OLED 11 is relatively large, and the light is usually mixed with light of other colors. For example, a certain OLED 11 needs to emit red light, but the light emitted by the OLED 11 is usually mixed with some yellow light, so the purity of the light emitted by each OLED 11 is relatively low. In the embodiment of the present invention, since a color block is correspondingly provided on the side of each OLED away from the base substrate, the color block can filter the light emitted by the OLED, thereby removing the light of other colors mixed in the light, and improving the purity of the light emitted by the display panel.

[0112] It should also be noted that in the manufacture of Fig.11 When manufacturing the display panel shown, a high-precision metal mask (FMM) is required, and due to the limitation of the precision of the FMM, the related technology cannot produce an OLED with a smaller orthographic projection area on the substrate, so the number of pixels per inch (PPI) in the display panel is relatively small.

[0113] When manufacturing the display panel provided by the embodiment of the present invention, there is no need to use FMM, so the process of manufacturing the display panel is not limited by FMM, so the PPI of the display panel provided by the embodiment of the present invention is relatively high. For example, the PPI of the display panel in the embodiment of the present invention can reach 6000, while the PPI of the display panel in the related art is less than 6000, such as about 2000.

[0114] In addition, the display panel provided by the embodiment of the present invention can achieve a color gamut greater than 100% in the color gamut standard established by NTSC.

[0115] It should be noted that the arrangement order of the light-emitting layers in the pixel structure in the embodiment of the present invention is only an example. Optionally, the arrangement order of the light-emitting layers can be adjusted, and the embodiment of the present invention is not limited to this.

[0116] To summarize, since the display panel provided by the embodiment of the present invention includes: multiple pixel structures and a color resist layer, and each OLED is used to emit light of the same color as the corresponding color resist block, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0117] Fig.12 A flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention. The method can be used to manufacture Figure 1 , Figure 2 , Figure 5 , Figure 8 , Fig. 9 and Fig.10 Any of the display panels shown. Fig.12 As shown, the manufacturing method of the display panel may include:

[0118] Step 1201: Provide a substrate.

[0119] Step 1202: forming a plurality of pixel structures on a substrate.

[0120] Step 1203: forming a color resist layer on a side of the plurality of pixel structures away from the base substrate.

[0121] The color resist layer includes a plurality of color resist blocks arranged one-to-one corresponding to the plurality of pixel structures, each of the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the corresponding color resist block.

[0122] In summary, since the display panel manufactured by the method provided in the embodiment of the present invention includes: multiple pixel structures and a color resist layer, and each OLED is used to emit light of the same color as the corresponding color resist block, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0123] It should be noted that the display panel manufactured by the method provided in the embodiment of the present invention can be implemented in a variety of ways, for example, Figure 2 , Figure 5 , Figure 8 , Fig. 9 and Fig.10 The manufacturing methods of the display panel in these embodiments are similar. In the embodiment of the present invention, only the manufacturing method of the display panel is shown in FIG. Figure 2 The display panel shown is taken as an example for explanation.

[0124] For example, in manufacturing Figure 2 When the display panel is shown, Fig.13 As shown, step 1202 may include:

[0125] Step 12021: sequentially form a first transparent conductive layer and a reflective conductive layer on the base substrate.

[0126] Optional, such as Fig.14 As shown, when manufacturing the first transparent conductive layer 0211, a layer of transparent conductive material can be deposited on the substrate 01 by coating, magnetron sputtering, thermal evaporation or plasma enhanced chemical vapor deposition (PECVD) to obtain a transparent conductive material layer ( Fig.14(not shown), and then the transparent conductive material layer is processed by a single patterning process to obtain the first transparent conductive layer 0211.

[0127] Among them, a single patterning process includes: photoresist coating, exposure, development, etching and photoresist stripping. Therefore, using a single patterning process to process the transparent conductive material layer includes: coating a layer of photoresist on the transparent conductive material layer, and then using a mask to expose the photoresist so that the photoresist forms a completely exposed area and a non-exposed area, and then using a development process to remove the photoresist in the completely exposed area and retain the photoresist in the non-exposed area, and then etching the corresponding area of ​​the completely exposed area on the transparent conductive material layer. After etching, the photoresist in the non-exposed area is stripped off to obtain the first transparent conductive layer 0211.

[0128] After forming the first transparent conductive layer 0211, a reflective conductive material layer ( Fig.14 (not shown), and then the reflective conductive material layer is processed by a single patterning process to obtain Fig.14 The reflective conductive layer 0212 is shown.

[0129] Step 12022: forming an insulating layer on the base substrate on which the first transparent conductive layer and the reflective conductive layer are formed.

[0130] It should be noted that a plurality of pixel structures capable of emitting light of various colors need to be formed on the substrate. Figure 2 In the OLED in the display panel shown, the color of the light emitted by the OLED is adjusted by adjusting the thickness of the insulating layer, so an insulating layer with various thicknesses needs to be formed on the base substrate in step 12022. For example, an OLED capable of emitting red light, an OLED emitting green light, and an OLED emitting blue light need to be formed on the base substrate, so an insulating layer with three thicknesses needs to be formed on the base substrate in step 12022. For example, the insulating layer thickness of the OLED emitting red light is the largest, and the insulating layer thickness of the OLED emitting blue light is the smallest.

[0131] The process of forming the insulating layer on the substrate can be as follows: Figures 15 to 18 Please combine Figures 15 to 18 When forming the insulating layer 0213, an insulating material layer and a photoresist layer can be formed in sequence on the base substrate 01 on which the first transparent conductive layer 0211 and the reflective conductive layer 0212 are formed. Figures 15 to 18 The insulating material layer and the photoresist layer are not shown in the figure).

[0132] Then, the photoresist layer is exposed using a mask to form a completely exposed area and a non-exposed area in the photoresist layer, wherein the non-exposed area is the corresponding area of ​​the reflective conductive layer 0212 in the photoresist layer. Then, a developing process is used to remove the photoresist in the completely exposed area and retain the photoresist in the non-exposed area. Then, the corresponding area of ​​the completely exposed area on the insulating material layer is etched. After the etching is completed, the photoresist in the non-exposed area is peeled off to obtain the following. Fig.15 The first insulation layer pattern C1 and the first photoresist pattern C2 are shown.

[0133] Further, after obtaining the first insulating layer pattern C1 and the first photoresist pattern C2, the first photoresist pattern C2 can be exposed and developed using a half-tone mask to remove the photoresist in the region where the minimum thickness insulating layer is to be formed, and to thin the photoresist in the region where the second minimum thickness insulating layer is to be formed, thereby obtaining Fig.16 The second photoresist pattern C3 shown. The second photoresist pattern C3 includes: a first thickness area C31, a second thickness area C32 and a photoresist completely removed area C33, and the photoresist thickness of the first thickness area C31 is greater than the photoresist thickness of the second thickness area C32, and the first thickness area C31 is the corresponding area of ​​the second photoresist pattern C3 where the maximum thickness insulating layer is to be formed.

[0134] Afterwards, the first insulating layer pattern C1 can be etched using the second photoresist pattern C3 as a mask, such as by dry etching. During the etching process, the first insulating layer pattern C1 corresponding to the photoresist completely removed area C33 is thinned, and the second thickness area C32 and its corresponding first insulating layer pattern C1 are both thinned. Then, the first thickness area C31 is stripped, thereby obtaining Fig.17 The second insulation layer pattern C4 is shown.

[0135] Finally, if Fig.18 As shown, a via C5 can be formed in the second insulating layer pattern C4, thereby obtaining three thicknesses of insulating layer 0213. The three thicknesses of insulating layer 0213 correspond to the first thickness region C31, the second thickness region C32 and the photoresist completely removed region C33 in the second photoresist pattern C3.

[0136] Optionally, step 12022 may also be implemented in other ways, such as three insulating layers of different thicknesses may be formed in sequence, which is not limited in this embodiment of the present invention.

[0137] Step 12023, a second transparent insulating layer, a first hole injection layer, a first hole transport layer, a red light-emitting layer, a green light-emitting layer, a first electron transport layer, a first electrical connection layer, a second hole injection layer, a second hole transport layer, a blue light-emitting layer, a second electron transport layer, an electron injection layer and a second electrode are sequentially formed on the base substrate having an insulating layer.

[0138] The formation process of each film layer to be formed in step 12023 may include: coating the material layer of the film layer, and then processing the material layer through a composition process. This process can refer to the process of manufacturing the first transparent conductive layer or reflective conductive layer in step 12021.

[0139] After sequentially forming a second transparent insulating layer, a first hole injection layer, a first hole transport layer, a red light emitting layer, a green light emitting layer, a first electron transport layer, a first electrical connection layer, a second hole injection layer, a second hole transport layer, a blue light emitting layer, a second electron transport layer, an electron injection layer and a second electrode, a Fig.19 The structure shown. For example, Fig.19 The structure shown includes: a red light pixel structure capable of emitting red light, a green light pixel structure emitting green light, and a blue light pixel structure emitting blue light.

[0140] It should be noted that after the multiple pixel structures are manufactured, a TFE layer needs to be formed on the base substrate on which the multiple pixel structures are formed. In step 1203, a color resist layer may be formed on the TFE layer.

[0141] In summary, since the display panel manufactured by the method provided in the embodiment of the present invention includes: multiple pixel structures and a color resist layer, and each OLED is used to emit light of the same color as the corresponding color resist block, more light emitted by the OLED can pass through the color resist block, the color purity of the display panel is higher, and the display effect of the display panel is improved.

[0142] An embodiment of the present invention provides a display device, which may include Figure 1 , Figure 2 , Figure 5 , Figure 8 , Fig. 9 and Fig.10 Any of the display panels shown. For example, the display device can be: electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, or any other product or component with display function.

[0143] It should be noted that the method embodiments provided in the embodiments of the present invention can be referenced with the corresponding display panel and display device embodiments, and the embodiments of the present invention are not limited thereto. The sequence of steps of the method embodiments provided in the embodiments of the present invention can be appropriately adjusted, and the steps can be increased or decreased accordingly according to the circumstances. Any technician familiar with the technical field can easily think of a method of change within the technical scope disclosed in the present invention, and it should be covered within the protection scope of the present invention, so it will not be repeated.

[0144] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A display panel, characterized in that: The display panel comprises: a substrate, A plurality of pixel structures are arranged on the base substrate, a color resist layer is arranged on a side of the plurality of pixel structures away from the base substrate, the color resist layer comprises a plurality of color resist blocks arranged in one-to-one correspondence with the plurality of pixel structures, the orthographic projections of the color resist blocks on the base substrate overlap with the orthographic projections of the corresponding pixel structures on the base substrate, the color resist layer further comprises a black matrix located between the plurality of color resist blocks, and the black matrix is ​​located between the plurality of color resist blocks in a first direction; Each pixel structure in the plurality of pixel structures emits light of one color, and the color of the light emitted by each pixel structure is the same as the color of the color block corresponding to it; The pixel structure comprises: a first electrode, a plurality of electroluminescent structures and a second electrode sequentially arranged on the substrate, the first electrode comprising a reflective conductive layer, and the second electrode comprising a semi-transmissive and semi-reflective conductive layer; The display panel further comprises a resonant cavity located in each of the pixel structures, wherein the resonant cavity comprises the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer; The first electrode further comprises an insulating layer located between the reflective conductive layer and the second conductive layer, and the second conductive layer is connected to the reflective conductive layer through a via hole on the insulating layer; The plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light; The thickness of the insulating layer in the red light pixel structure is greater than the thickness of the insulating layer in the blue light pixel structure; The pixel structure also includes a functional film layer located between the first electrode and the second electrode, and the functional film layer includes: at least one film layer of an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer. The wavelength of light emitted by the pixel structure is positively correlated with the thickness of the functional film layer in the pixel structure.

2. The display panel according to claim 1, characterized in that: The thickness of the insulating layer in the green light pixel structure is greater than the thickness of the insulating layer in the blue light pixel structure.

3. The display panel according to claim 1 or 2, characterized in that: The material of the insulating layer includes an inorganic material.

4. The display panel according to claim 3, characterized in that: The material of the insulating layer includes silicon dioxide.

5. The display panel according to claim 1, characterized in that: The first electrode includes at least a first conductive layer, the reflective conductive layer, and a second conductive layer on the base substrate.

6. The display panel according to claim 5, characterized in that: At least one of the first conductive layer and the second conductive layer is made of indium tin oxide.

7. The display panel according to claim 1, characterized in that: The display panel further includes a thin film encapsulation layer located on a side of the plurality of pixel structures away from the base substrate.

8. The display panel according to claim 1, characterized in that: The pixel structure includes a series-connected OLED consisting of a plurality of electroluminescent structures.

9. The display panel according to claim 8, characterized in that: The pixel structure comprises: a red light emitting layer, a green light emitting layer, a first electrical connection layer and a blue light emitting layer arranged in sequence on the base substrate, The first electroluminescent structure includes the red light-emitting layer and the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer; The first electroluminescent structure and the second electroluminescent structure are connected in series via the first electrical connection layer.

10. The display panel according to claim 9, characterized in that: The pixel structure comprises: a red light emitting layer, a second electrical connection layer, a green light emitting layer, a first electrical connection layer and a blue light emitting layer which are sequentially arranged on the base substrate. The third electroluminescent structure includes the red light-emitting layer, the fourth electroluminescent structure includes the green light-emitting layer, and the second electroluminescent structure includes the blue light-emitting layer; The third electroluminescent structure is connected in series with the fourth electroluminescent structure via the second electrical connection layer, and the fourth electroluminescent structure is connected in series with the second electroluminescent structure via the first electrical connection layer.

11. The display panel according to any one of claims 8 to 10, characterized in that: The reflective conductive layer and the semi-transmissive and semi-reflective conductive layer form a resonant cavity; The distance between the reflective conductive layer and the semi-transmissive and semi-reflective conductive layer is the cavity length of the resonant cavity, and the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure.

12. The display panel according to claim 11, characterized in that: The first electrode comprises: a first conductive layer, a reflective conductive layer, an insulating layer and a second conductive layer sequentially arranged on the base substrate; The second conductive layer is connected to the reflective conductive layer through a via hole on the insulating layer, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the insulating layer in the pixel structure.

13. The display panel according to claim 11, characterized in that: The first electrode comprises: a first conductive layer, a reflective conductive layer and a second conductive layer sequentially arranged on the base substrate; The wavelength of light emitted by the pixel structure is positively correlated with the thickness of the second conductive layer in the pixel structure.

14. The display panel according to claim 11, characterized in that: The cavity length of the resonant cavity in the pixel structure is Wherein, k is the cavity length coefficient and is an integer, λ is the wavelength of light emitted by the pixel structure, n is the average refractive index of the medium in the resonant cavity, and θ is the reflection angle of light reflected on the conductive layer in the pixel structure.

15. The display panel according to claim 14, characterized in that: The plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light, The cavity length of the first resonant cavity in the red light pixel structure corresponds to k i, the cavity length of the second resonant cavity in the green light pixel structure corresponds to k i, and the cavity length of the third resonant cavity in the blue light pixel structure corresponds to k i, i≥1.

16. The display panel according to claim 14, characterized in that: The plurality of pixel structures include: a red light pixel structure for emitting red light, a green light pixel structure for emitting green light, and a blue light pixel structure for emitting blue light, The k corresponding to the cavity length of the first resonant cavity in the red light pixel structure is j, the k corresponding to the cavity length of the second resonant cavity in the green light pixel structure is j, and the k corresponding to the cavity length of the third resonant cavity in the blue light pixel structure is j+1, j≥1.

17. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 16.

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