Field effect transistor and method of manufacturing the same
By using neatly arranged graphene nanoribbons as the semiconductor layer in field-effect transistors, and combining them with protrusions on the substrate and water or organic solvents to form wrinkles, the problems of low carrier mobility and high fabrication cost in existing technologies are solved, achieving high response speed and low cost for large-area fabrication.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TSINGHUA UNIVERSITY
- Filing Date
- 2020-12-09
- Publication Date
- 2026-07-17
AI Technical Summary
In existing field-effect transistors, amorphous silicon as the semiconductor layer has low carrier mobility, resulting in slow response speed, while polycrystalline silicon as the semiconductor layer has high fabrication cost and is difficult to fabricate on a large scale.
Multiple neatly arranged graphene nanoribbons are used as semiconductor layers. By setting protrusions on the substrate and combining them with water or organic solvents to form a wrinkled graphene film, and then etching to form a graphene nanoribbon composite structure, large-area fabrication can be achieved.
This has enabled the fabrication of large-area field-effect transistors with high carrier mobility, fast response speed, and low cost, while reducing energy consumption and fabrication complexity.
Smart Images
Figure CN114613677B_ABST