Design and preparation method of micro self-powered sensor for key engine components

Abstract

The present invention provides a design and fabrication method for a miniature self-powered sensor for key engine components. The sensor comprises an electrical isolation layer, a thermal resistance layer, a P-type semiconductor, and an N-type semiconductor. One or more thermal resistance layers are disposed on the surface of the electrical isolation layer, with the region where the thermal resistance layer is disposed forming a hot end region, and the region not covered by the thermal resistance layer forming a cold end region. Both the P-type semiconductor and the N-type semiconductor are disposed on a combination of the electrical isolation layer and the thermal resistance layer, with the P-type semiconductor and the N-type semiconductor spaced apart and connected end to end, forming a node at the connection. The present invention facilitates the conversion of thermal energy into electrical energy by forming a thermal resistance layer on the electrical isolation layer and then fabricating a sensor circuit composed of a P-type semiconductor and an N-type semiconductor on both layers. By employing a variety of hot end region and hot node combinations, the present invention helps improve the operating efficiency of the sensor, thereby expanding the sensor's applicability.

Description

Technical Field

[0001] The present invention relates to the field of micro-electromechanical technology, and in particular to a design of a micro self-powered sensor for key engine components and a preparation method thereof. Background Art

[0002] Besides kinetic energy and sunlight, thermal energy is a widespread energy source, yet it's often overlooked and wasted in our daily lives. Today, in industrial and agricultural production, scientific research, aerospace, power engineering, and everyday life, numerous heat transfer and dissipation issues exist. Converting this heat into electricity offers enormous benefits.

[0003] For example, aero-engines are in a high-temperature and high-heat-flow environment. In order to fully collect the waste heat energy of aero-engines, thermoelectric sensors use the Seebeck measurement principle of thermocouples and combine it with thin-film technology to achieve transient measurement of heat flux density. At the same time, the output electromotive force provides energy for other sensor chips, such as strain and pressure sensors.

[0004] The aviation industry has experienced rapid growth in recent years, permeating everything from personal travel to national defense. This, in turn, places higher demands on aircraft performance and safety. To optimize performance and monitor safety, sensor chips are becoming increasingly common in the aviation industry. For example, temperature sensors, heat flow sensors, stress sensors, and shear force and torque sensors enable real-time monitoring of various indicators of aircraft structural components. However, these sensor chips require a tiny electromotive force to operate. Using a traditional external power supply requires wiring connections to the structural components. This not only fails to ensure reliable long-term measurements, but also compromises the mechanical properties of the components themselves.

[0005] Furthermore, because aircraft power plants operate at high speeds and high temperatures, they typically require external cooling to maintain stability. This creates significant longitudinal temperature differences within the power plant and even on the surfaces of nearby structural components. These temperature differences can be exploited by thermoelectric devices, converting them into tiny electromotive forces.

[0006] The existing Chinese patent with publication number CN105874622A discloses a sensor, which comprises a thermoelectric generator (10) for converting thermal energy into electrical energy, a contact surface (14, 16) for contacting a heat source and a cold source, and a heat conductor path (18, 20), wherein the thermoelectric generator (10) has a top side and a bottom side (10a, 10b) with thermal force, and the heat conductor path (18, 20) connects the contact surface (14, 16) with the top side and the bottom side (10a, 10b) of the thermoelectric generator (10) to generate a thermal gradient between the top side and the bottom side (10a, 10b) of the thermoelectric generator (10), wherein the first and / or second heat conductor path (18, 20) is constructed to deflect the thermal gradient in the sensor when at least one of the contact surfaces (14, 16) is oriented differently relative to at least one of the top side and the bottom side (10a, 10b) of the thermoelectric generator (10).

[0007] The inventor believes that the existing technology is not sufficient to convert the heat energy on the engine structural components into electrical energy, and a more reasonable structure needs to be provided. Summary of the Invention

[0008] In view of the defects in the prior art, the purpose of the present invention is to provide a miniature self-powered sensor design for key engine components.

[0009] According to the present invention, a miniature self-powered sensor design for key engine components and its preparation method include an electrical isolation layer, a thermal resistance layer, a P-type semiconductor, and an N-type semiconductor; one or more thermal resistance layers are provided on the surface of the electrical isolation layer, the area provided with the thermal resistance layer forms a hot end area, and the area not covered by the thermal resistance layer forms a cold end area; both the P-type semiconductor and the N-type semiconductor are provided on a combination formed by the electrical isolation layer and the thermal resistance layer, the P-type semiconductor and the N-type semiconductor are arranged at intervals and connected end to end in sequence, and a node is formed at the connection.

[0010] Preferably, the electrical isolation layer is provided on the surface of the structural component substrate, and a temperature gradient exists on the structural component substrate.

[0011] Preferably, Pad regions are formed at both ends of the sensing circuit composed of a P-type semiconductor and an N-type semiconductor, one end being a P-type semiconductor and the other end being an N-type semiconductor; the Pad region is used to lead out the electric potential.

[0012] Preferably, the nodes include hot nodes and cold nodes, the hot nodes and the cold nodes are arranged at intervals, the hot nodes are located in the hot end area, and the cold nodes are located in the cold end area.

[0013] Preferably, when a plurality of hot end regions are provided on the electrical isolation layer, each hot end region is provided with only one hot node.

[0014] Preferably, when only one hot end region is provided on the electrical isolation layer, a plurality of hot nodes are provided on the hot end region.

[0015] Preferably, when a plurality of hot end regions are provided on the electrical isolation layer, one or more hot nodes are provided on any thermal resistance layer.

[0016] Preferably, the cross-sectional shape of the thermal resistance layer includes a trapezoid, and the thickness of the thermal resistance layer includes 1-10 μm; the thermal resistance layer includes any one of aluminum oxide, silicon dioxide, and a composite material of aluminum oxide and silicon dioxide.

[0017] Preferably, the electrical isolation layer includes any one of insulating materials such as polyimide, aluminum oxide and silicon dioxide.

[0018] According to the present invention, a preparation method of the micro self-powered sensor for key engine components according to the above-mentioned design is provided, and the preparation method comprises the following steps:

[0019] S1, preparing an electrical isolation layer on the surface of the structural component substrate;

[0020] S2, using a mask patterning process combined with spin coating, physical sputtering and other film forming methods to prepare a thermal resistance layer on the electrical isolation layer;

[0021] S3, using a mask patterning process combined with screen printing or magnetron sputtering to prepare P-type semiconductor lines on the electrical isolation layer and the thermal resistance layer;

[0022] S4, using a photolithography patterning process combined with screen printing or magnetron sputtering, prepare N-type semiconductor lines on the electrical isolation layer and the thermal resistance layer. The N-type semiconductor and the P-type semiconductor are arranged at intervals and connected end to end in sequence to form a micro self-powered sensor.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] 1. The present invention prepares a thermal resistance layer on the electrical isolation layer, and then prepares a sensor circuit composed of a P-type semiconductor and an N-type semiconductor on the two, which helps to convert thermal energy into electrical energy, thereby helping to utilize the energy conversion of the engine itself.

[0025] 2. The present invention uses the surface of the engine structural part as the substrate and utilizes the temperature gradient existing in the substrate of the structural part to help fully convert thermal energy into electrical energy.

[0026] 3. The present invention helps to improve the working efficiency of the sensor by adopting a variety of matching modes of hot end areas and hot nodes, thereby helping to increase the applicable scope of the sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Other features, objects and advantages of the present invention will become more apparent upon reading the detailed description of non-limiting embodiments with reference to the following drawings:

[0028] Figure 1 This is a schematic diagram of the overall structure of the miniature self-powered sensor designed for key engine components, which is mainly embodied in the present invention;

[0029] Figure 2 This is a schematic plan view of a miniature self-powered sensor designed for key engine components according to an embodiment of the present invention;

[0030] Figure 3 This is a schematic plan view of a miniature self-powered sensor designed for a key engine component according to variation 1 of the present invention;

[0031] Figure 4 This is a planar schematic diagram of the design of a micro self-powered sensor for key engine components in variation 2 of the present invention.

[0032] As shown in the figure:

[0033] Structural component base 1 Electrical isolation layer 2 Thermal resistance layer 3

[0034] P-type semiconductor 4 N-type semiconductor 5 Pad region 6 DETAILED DESCRIPTION

[0035] The present invention will be described in detail below with reference to specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those skilled in the art, several changes and improvements can be made without departing from the scope of the present invention. These all fall within the scope of protection of the present invention.

[0036] Example 1

[0037] like Figure 1 and Figure 2 As shown, a miniature self-powered sensor design for key engine components according to the present invention includes: an electrical isolation layer 2, a thermal resistance layer 3, a P-type semiconductor 4, and an N-type semiconductor 5. One or more thermal resistance layers 3 are disposed on the surface of the electrical isolation layer 2, with the area where the thermal resistance layers 3 are disposed forming a hot end region, and the area not covered by the thermal resistance layers 3 forming a cold end region. Both the P-type semiconductor 4 and the N-type semiconductor 5 are disposed on the combination formed by the electrical isolation layer 2 and the thermal resistance layer 3. The P-type semiconductor 4 and the N-type semiconductor 5 are spaced apart and connected end to end, forming a node at the connection.

[0038] The present invention can convert the thermal energy on the surface of aircraft engine-related components into electrical energy for use by other sensor chips, especially to provide power for sensor chips used to monitor key engine components. There is a temperature gradient inside the engine, and there are components that require an external power supply. By utilizing the present invention, self-power supply can be achieved without the need for an external power supply. Since aircraft power units operate at high speeds and high temperatures, external cooling devices are usually required to maintain stability. The present invention can also reduce the number of external cooling devices, thereby reducing the weight of the engine. The micro-size of the present invention refers to the characteristic size of the internal structure of the sensor in the order of microns relative to the usual traditional self-powered system.

[0039] The present invention uses the surface of the engine structural component as the substrate, and the electrical isolation layer 2 is provided on the surface of the structural component substrate 1, and the structural component substrate 1 has a temperature gradient. Depending on the operating temperature range, the electrical isolation layer 2 includes any insulating material such as polyimide, aluminum oxide, and silicon dioxide.

[0040] The cross-sectional shape of the thermal resistance layer 3 includes a trapezoidal shape, and the thickness of the thermal resistance layer 3 includes a thickness of 1-10 μm. The thermal resistance layer 3 includes any one of aluminum oxide, silicon dioxide, and a composite material of aluminum oxide and silicon dioxide. The thermal resistance layer 3 is formed by a mask patterning process combined with a film forming method such as spin coating and physical sputtering.

[0041] The thermal resistance layer 3 covers a portion of the electrical isolation layer 2, where the thermal resistance layer prevents heat from being conducted downward, thus forming a relatively high temperature region, i.e., the hot end region. The region of the electrical isolation layer 2 not covered by the thermal resistance layer 3 forms the cold end region.

[0042] Both the P-type semiconductor 4 and the N-type semiconductor 5 are disposed on the combination of the electrical isolation layer 2 and the thermal resistance layer 3. Using a mask patterning process combined with screen printing or magnetron sputtering, lines of the P-type semiconductor 4 and the N-type semiconductor 5 are formed on the electrical isolation layer 2 and the thermal resistance layer 3. The N-type semiconductor 5 and the P-type semiconductor 4 are spaced apart and connected end-to-end, forming a micro self-powered sensor.

[0043] Pad regions 6 are formed at both ends of the sensing circuit composed of a P-type semiconductor 4 and an N-type semiconductor 5, with one end being the P-type semiconductor 4 and the other being the N-type semiconductor 5. Preferably, the Pad region 6 is located in the cold end region and has a larger surface area relative to the hot and cold nodes, allowing for subsequent wire bonding to draw out the potential.

[0044] The nodes include hot nodes and cold nodes. The hot nodes and the cold nodes are set at intervals. The hot nodes are located in the hot end area, and the cold nodes are located in the cold end area.

[0045] When multiple hot-end regions are provided on the electrical isolation layer 2, only one hot node is provided in each hot-end region. The sensing circuit composed of the P-type semiconductor 4 and the N-type semiconductor 5 is arranged in a serpentine shape, and the pad regions 6 formed at both ends of the sensing circuit are located on the same side to facilitate potential extraction.

[0046] The thermal nodes correspond to the thermal resistance layer 3 one by one, making full use of the temperature gradient on the surface of the structural component base 1 to improve the efficiency of converting electrical energy.

[0047] Variation 1

[0048] like Figure 3 As shown, based on Example 1, when only one hot-end region is provided on the electrical isolation layer 2, multiple hot nodes are provided on the hot-end region. The hot nodes are provided on opposite sides of the thermal resistance layer 3, and the cold nodes are provided outside of the two corresponding sides, so that the P-type semiconductors 4 and N-type semiconductors 5 are arranged in a staggered zigzag pattern. The pad regions 6 formed at both ends of the sensing circuit are located on the same side to facilitate potential extraction.

[0049] A large-scale thermal resistance layer 3 is prepared on the surface of the structural component substrate 1 to fully utilize the thermal energy on the surface of the structural component substrate 1 and improve the conversion rate of thermal energy.

[0050] Variation 2

[0051] like Figure 4 As shown, based on Example 1, when multiple hot end regions are provided on the electrical isolation layer 2, one or more hot nodes are provided on each hot end region. Multiple hot nodes are provided on opposite sides of each thermal resistance layer 3, and cold nodes are provided on the outside of the two corresponding sides. On each thermal resistance layer 3, N-type semiconductors 4 and N-type semiconductors 5 are arranged in a staggered manner in a zigzag pattern. The distribution of multiple thermal resistance layers 3 creates a serpentine arrangement of the sensing circuit as a whole, and the pad regions 6 formed at both ends of the sensing circuit are located on the same side, facilitating potential extraction.

[0052] The size of the thermal resistance layer 3 is preferably prepared according to the actual temperature gradient on the surface of the structural component substrate 1 , so as to fully utilize the thermal energy on the surface of the structural component substrate 1 and improve the efficiency of converting thermal energy into electrical energy.

[0053] Example 2

[0054] According to the present invention, a preparation method of a miniature self-powered sensor for a key component of an engine based on Example 1 is provided, characterized in that the preparation method comprises the following steps:

[0055] S1, preparing an electrical isolation layer 2 on the surface of a structural component substrate 1;

[0056] S2, using a mask patterning process combined with a film forming method such as spin coating and physical sputtering to prepare a thermal resistance layer 3 on the electrical isolation layer 2;

[0057] S3, using a mask patterning process combined with screen printing or magnetron sputtering to prepare P-type semiconductor 4 lines on the electrical isolation layer 2 and the thermal resistance layer 3;

[0058] S4, using a photolithography patterning process combined with screen printing or magnetron sputtering, prepare N-type semiconductor 5 lines on the electrical isolation layer 2 and the thermal resistance layer 3. The N-type semiconductor 5 and the P-type semiconductor 4 are arranged at intervals and connected end to end in sequence to form a micro self-powered sensor.

[0059] How it works

[0060] There is a temperature gradient on the structural component substrate 1. The sensing circuit composed of the P-type semiconductor 4 and the N-type semiconductor 5 uses this temperature difference to convert thermal energy into electrical energy, and then leads the potential out through the Pad area 6 for use by other sensor chips.

[0061] In the description of this application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0062] The above describes specific embodiments of the present invention. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art may make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention. The embodiments of this application and the features in the embodiments may be combined with each other in any manner unless there is a conflict.

Claims

1. A design of a miniature self-powered sensor for key engine components, characterized in that: include: An electrical isolation layer (2), a thermal resistance layer (3), a P-type semiconductor (4), and an N-type semiconductor (5); One or more thermal resistance layers (3) are provided on the surface of the electrical isolation layer (2); the area provided with the thermal resistance layer (3) forms a hot end area, and the area not covered with the thermal resistance layer (3) forms a cold end area; Both the P-type semiconductor (4) and the N-type semiconductor (5) are arranged on a combination formed by the electrical isolation layer (2) and the thermal resistance layer (3), the P-type semiconductor (4) and the N-type semiconductor (5) are arranged at intervals and connected end to end in sequence, and a node is formed at the connection; A Pad region (6) is formed at both ends of the sensing circuit composed of a P-type semiconductor (4) and an N-type semiconductor (5), one end of which is the P-type semiconductor (4) and the other end of which is the N-type semiconductor (5); The Pad region (6) is used to lead out the electric potential; The nodes include hot nodes and cold nodes. The hot nodes and the cold nodes are set at intervals. The hot nodes are located in the hot end area, and the cold nodes are located in the cold end area.

2. The design of a miniature self-powered sensor for key engine components as claimed in claim 1, characterized in that: The electrical isolation layer (2) is arranged on the surface of the structural component substrate (1), and a temperature gradient exists on the structural component substrate (1).

3. The design of a miniature self-powered sensor for key engine components as claimed in claim 1, characterized in that: When a plurality of hot end regions are provided on the electrical isolation layer (2), any hot end region is provided with only one hot node.

4. The design of a miniature self-powered sensor for key engine components as claimed in claim 1, characterized in that: When only one hot end region is provided on the electrical isolation layer (2), a plurality of hot nodes are provided on the hot end region.

5. The design of a miniature self-powered sensor for key engine components as claimed in claim 1, characterized in that: When a plurality of hot end regions are provided on the electrical isolation layer (2), one or more hot nodes are provided on any thermal resistance layer (3).

6. The design of a miniature self-powered sensor for key engine components as claimed in claim 1, characterized in that: The cross-sectional shape of the thermal resistance layer (3) includes a trapezoid, and the thickness of the thermal resistance layer (3) includes 1-10 μm; The heat resistance layer (3) comprises any one of aluminum oxide, silicon dioxide and a composite material of aluminum oxide and silicon dioxide.

7. The design of a miniature self-powered sensor for key engine components as claimed in claim 1, characterized in that: The electrical isolation layer (2) comprises any one of insulating materials such as polyimide, aluminum oxide and silicon dioxide.

8. A method for manufacturing a miniature self-powered sensor for key engine components according to any one of claims 1 to 7, characterized in that: The preparation method comprises the following steps: S1, preparing an electrical isolation layer (2) on the surface of a structural component substrate (1); S2, using a mask patterning process combined with spin coating, physical sputtering and other film forming methods to prepare a thermal resistance layer (3) on the electrical isolation layer (2); S3, using a mask patterning process combined with screen printing or magnetron sputtering to prepare P-type semiconductor (4) lines on the electrical isolation layer (2) and the thermal resistance layer (3); S4, using a photolithography patterning process combined with screen printing or magnetron sputtering, prepare N-type semiconductor (5) lines on the electrical isolation layer (2) and the thermal resistance layer (3), and the N-type semiconductor (5) and the P-type semiconductor (4) are arranged at intervals and connected end to end in sequence to form a micro self-powered sensor.

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