Testing method and system for displacement damage effect of enhanced gallium nitride devices

Abstract

The present invention discloses a method and system for testing displacement damage effect of an enhancement-mode gallium nitride device. The method comprises: grouping and numbering devices to be tested to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group; performing electrical performance tests on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and recording a first test result; performing proton irradiation on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group; performing electrical performance tests on the proton-irradiated enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and recording a second test result; obtaining a first comparison result based on a comparison analysis of the second test result of the enhancement-mode gallium nitride device group and the first test result; obtaining a second comparison result based on a comparison analysis of the second test result of the depletion-mode gallium nitride device group and the first test result; and determining a sensitive region of the device to be tested to charge collection of the displacement damage effect based on the first comparison result and the second comparison result.

Description

Technical Field

[0001] The present invention relates to the technical field of microelectronics, and in particular to a testing method and system for displacement damage effect of an enhanced gallium nitride device. Background Art

[0002] As a typical representative of the third generation of wide bandgap semiconductor materials, gallium nitride (GaN) is a direct bandgap wide bandgap semiconductor, usually with a wurtzite structure and a bandgap width of 3.4eV at room temperature. It has excellent physical and chemical properties, including a large critical breakdown voltage, a large electron saturation drift velocity and high thermal conductivity, etc. It has broad prospects in the application of optoelectronics, high-temperature high-power devices and high-frequency microwave devices. There is also an urgent need for such devices in special environments such as aerospace, nuclear industry, and military electronics. For electronic devices used in spacecraft, there are a large number of galactic cosmic rays, solar flares, and particles in the geomagnetic capture zone in the outer space environment, which will have a significant impact on the reliability of electronic devices on spacecraft. There are a large number of high-energy particles in the space environment, mainly electrons (energy > 5MeV), protons (energy 0.1-5MeV) and a small amount of heavy ions. Protons are one of the main particles that cause displacement damage effects in semiconductor devices in the space radiation environment. The displacement damage effect refers to the fact that high-energy particles such as protons, neutrons and electrons are incident on the target material, which will interact with the atoms in the material and transfer part of their own energy to the target atoms, causing them to leave their original lattice positions and become interstitial atoms in the lattice, leaving a vacancy at its original position. If the vacancy and interstitial atom are still within the range of its elastic force field and Coulomb force field, they can recombine; if they exceed this force field, interstitial atom-vacancy pairs are formed, namely Frenkel Defect, which leads to device performance degradation or permanent damage.

[0003] A large number of irradiation experiments have been carried out on traditional depletion-mode GaN devices at home and abroad. However, proton irradiation experiments have not been carried out on new enhanced cascode structure GaN devices under the existing technology. In addition, the test results obtained by other test methods such as heavy ion irradiation cannot accurately characterize the physical mechanism of the displacement damage effect. Summary of the invention

[0004] (I) Purpose of the invention

[0005] The purpose of the present invention is to provide a testing method and system for the displacement damage effect of an enhanced gallium nitride device. By comparing and analyzing the changes in the electrical properties of the device under test before and after proton irradiation, it can be obtained that the sensitive area of ​​the enhanced gallium nitride device is at the gate, thereby accurately characterizing the physical mechanism of the displacement damage effect.

[0006] (II) Technical solution

[0007] To solve the above problems, a first aspect of the present invention provides a method for testing displacement damage effects of enhancement-mode gallium nitride devices, comprising: grouping and numbering devices to be tested to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group; performing electrical performance tests on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and recording a first test result; performing proton irradiation on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group; performing electrical performance tests on the proton-irradiated enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and recording a second test result; obtaining a first comparison result based on a comparison analysis of the second test result of the enhancement-mode gallium nitride device group with the first test result; obtaining a second comparison result based on a comparison analysis of the second test result of the depletion-mode gallium nitride device group with the first test result; and determining a sensitive area of ​​the device to be tested to charge collection due to displacement damage effects based on the first comparison result and the second comparison result.

[0008] Optionally, the electrical performance test uses a semiconductor parameter analyzer, including the following setting parameters: measuring the gate-source voltage, setting the drain voltage to 100mV; setting the gate-source voltage range to 0-15V; and setting the saturation drain current range to 0-1A.

[0009] Optionally, the proton irradiation of the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group includes: the proton energy is 60 MeV; the injection rate is 1×10 7 -1×10 8 p / (cm 2 ·s); injection volume is 1×10 12 p / cm 2 Below; the irradiation range is 2×2 cm; no bias is applied during the irradiation process.

[0010] Optionally, the second test result and the first test result both include: transconductance, threshold voltage and saturation leakage current.

[0011] Optionally, the transconductance satisfies the following conditional formula:

[0012]

[0013] In the formula, G m It is transconductance; is the partial differential symbol; I D is the saturation leakage current; V G is the source-drain voltage.

[0014] Optionally, the saturation leakage current satisfies the following conditional formula:

[0015]

[0016] Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; V D Represents the drain voltage; V T represents the threshold voltage; μ N represents electron mobility.

[0017] Optionally, the transconductance satisfies the following conditional formula:

[0018]

[0019] Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; V D represents the drain voltage; μ N represents electron mobility.

[0020] Optionally, both the first comparison result and the second comparison result include the electron mobility; when the electron mobility is reduced, a large number of electron-hole pairs are induced in the gate oxide layer, so that displacement damage occurs to the device under test.

[0021] Optionally, before proton irradiating the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, the process includes: connecting all devices to be tested to a PCB test board; fixing the PCB test board on a mobile platform, and using a laser collimator to align the center of the target chamber with the device to be tested.

[0022] A second aspect of the present invention provides a test system for displacement damage effect of an enhancement-mode gallium nitride device, comprising: a grouping module, which is used to group and number the devices to be tested to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group; a first testing module, which is used to perform an electrical performance test on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and record a first test result; an irradiation module, which is used to perform proton irradiation on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group; a second testing module, which is used to perform an electrical performance test on the proton-irradiated enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and record a second test result; a first comparing module, which is used to obtain a first comparison result based on a comparison analysis of a second test result of the enhancement-mode gallium nitride device group and a first test result; a second comparing module, which is used to obtain a second comparison result based on a comparison analysis of a second test result of the depletion-mode gallium nitride device group and a first test result; and a determining module, which is used to determine a sensitive area of ​​the device to be tested for charge collection due to displacement damage effect based on the first comparison result and the second comparison result.

[0023] (III) Beneficial effects

[0024] The above technical solution of the present invention has the following beneficial technical effects:

[0025] After high-energy proton irradiation, the electrical performance of the enhancement-mode GaN device and the depletion-mode GaN device changes due to defects introduced into the device structure, resulting in displacement damage effect. The corresponding second test result is obtained through electrical performance test; and compared with the corresponding first test result obtained by the electrical performance test before proton irradiation, it can be seen that the radiation resistance of the two devices is significantly different. Based on the comparison results, it can be concluded that the enhancement-mode GaN device is more sensitive to proton irradiation, and the sensitive area is at the gate. Therefore, through the comparative analysis of the changes in the electrical performance of the device under test before and after proton irradiation, it can be concluded that the sensitive area of ​​the enhancement-mode GaN device is at the gate, which can accurately characterize the physical mechanism of the displacement damage effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is the internal equivalent circuit diagram of the enhancement-mode GaN device;

[0027] Figure 2 It is a flow chart of a method for testing displacement damage effect of an enhanced gallium nitride device provided by an embodiment of the present invention;

[0028] Figure 3 Schematically showing the transfer characteristic curves of the enhanced gallium nitride device before and after proton irradiation;

[0029] Figure 4a Schematically showing the transfer characteristic curve 1 of the depletion-mode gallium nitride device before and after proton irradiation;

[0030] Figure 4b Schematically showing the transfer characteristic curve 2 of the depletion-mode gallium nitride device before and after proton irradiation;

[0031] Figure 5 It is a structural schematic diagram of a testing system for displacement damage effect of an enhanced gallium nitride device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are only exemplary and are not intended to limit the scope of the present invention. In addition, in the following description, the description of well-known structures and technologies is omitted to avoid unnecessary confusion of the concept of the present invention.

[0033] High-energy protons are the most important component in the space radiation environment. Like electrons, they react with matter through Coulomb action, and their tracks are not easily deflected, so protons have strong penetrating power. High-energy protons irradiate devices, causing lattice atoms to shift and generating charged defect centers. These defects reduce carrier mobility through Coulomb action, and reduce the surface density of the two-dimensional electron gas through charge recombination and carrier removal effects. In addition, proton irradiation can introduce defects at the interface between metals and materials, resulting in changes in the Schottky barrier height. The effects of proton irradiation on devices are mainly manifested in the drift of threshold voltage, changes in saturation leakage current and gate leakage current.

[0034] With the continuous optimization of semiconductor device structure and process, enhanced cascode GaN devices have been designed, produced and put into use, such as Figure 1 As shown, the cascode device is composed of a high-voltage depletion-mode gallium nitride device (GaNHEMT) and a low-voltage enhancement-mode Si MOSFET with a common source and a common gate. When the device has no gate voltage and the drain-source voltage is greater than zero, it works in the forward blocking mode; when the gate voltage is greater than the threshold voltage of the Si MOSFET, the device is forward-conducted; once the SiMOSFET is reverse-conducted, the device will work in the reverse conduction mode. Because the drain-source voltage Vds_Si of the Si MOSFET provides a negative bias voltage to the gate-source voltage Vgs_GaN of the GaNHEMT, controlling the on-off of the Si MOSFET can control the on-off of the GaN HEMT, thereby realizing the normally-off characteristic; in addition to realizing the normally-off characteristic, the enhancement type has a higher matching degree with the existing circuit than the depletion type, and can be applied to more fields.

[0035] like Figure 1 As shown in the figure, the device is composed of a Si MOSFET and a GaN HEMT cascaded, with the Si device controlling the gate-source terminal and the GaN device controlling the drain terminal. The gate-source voltage that makes the source terminal of the channel region strongly inverted is called the threshold voltage of the MOS tube. The negative drift of the threshold voltage of the cascode-type GaN device is mainly caused by the proton irradiation inducing a large number of electron-hole pairs in the gate oxide layer. Since the mobility of electrons in the oxide layer is higher than that of holes, electrons can leave the gate oxide layer in a shorter time, while holes move relatively slowly in the oxide layer and may even be captured by intrinsic defects in the gate oxide layer, which ultimately leads to a gate oxide layer trap charge surface density N. ot increases, making the threshold voltage V T reduce.

[0036] In the embodiment of the present invention, a new enhanced gallium nitride device is selected, and the device structure and manufacturing process are optimized. Due to the introduction of silicon MOS, the device has a larger gate voltage float compatible with the driving circuit; MOSFET is connected in a common source and common gate manner, acts as a switch, and realizes a normally closed state; while the traditional depletion type is in a normally open state due to the generation of two-dimensional electron gas due to the polarization of the AlN and GaN interface. Before it is enabled, a negative voltage needs to be added to reach the closed state before it can be used, otherwise a large current will appear to burn or damage the device.

[0037] One embodiment of the present invention provides a method for testing displacement damage effects of an enhancement mode gallium nitride device, such as Figure 2 As shown, the specific steps include:

[0038] Step S110, grouping and numbering the devices to be tested to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group;

[0039] Step S120, performing an electrical performance test on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and recording a first test result;

[0040] Step S130, proton irradiating the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group;

[0041] Step S140, performing an electrical performance test on the enhanced-mode gallium nitride device group and the depletion-mode gallium nitride device group after proton irradiation, and recording a second test result;

[0042] Step S150, obtaining a first comparison result based on a comparison analysis of the second test result and the first test result of the enhancement mode gallium nitride device group;

[0043] Step S160, obtaining a second comparison result based on a comparison analysis of the second test result and the first test result of the depletion-mode gallium nitride device group;

[0044] Step S170: determining a sensitive region of the device under test to charge collection of displacement damage effects based on the first comparison result and the second comparison result.

[0045] After high-energy proton irradiation, defects are introduced into the device structure of enhanced gallium nitride high electron mobility devices (cascode GaN HEMT) and depletion-mode gallium nitride devices, causing changes in the device electrical properties and resulting in displacement damage effect. The corresponding second test results are obtained through electrical performance testing; and compared with the corresponding first test results obtained by the electrical performance test before proton irradiation, it can be seen that the radiation resistance of the two devices is significantly different. Based on the comparison results, it can be concluded that enhanced gallium nitride devices are more sensitive to proton irradiation, and the sensitive area is at the gate, thereby accurately characterizing the physical mechanism of the displacement damage effect.

[0046] In some embodiments, the electrical performance test uses a semiconductor parameter analyzer, including the following setting parameters: measuring the gate-source voltage, setting the drain voltage to 100mV; setting the gate-source voltage range to 0-15V; and setting the saturation drain current range to 0-1A. For example, a semiconductor parameter analyzer B1500A may be used.

[0047] In some embodiments, the proton irradiation of the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group includes: the proton energy is 60 MeV; the injection rate is 1×10 7 -1×10 8 p / (cm 2 ·s); injection volume is 1×10 12 p / cm 2 Below; the irradiation range is 2×2 cm; no bias is applied during the irradiation process.

[0048] In some embodiments, the second test result and the first test result both include: transconductance, threshold voltage, and saturation leakage current.

[0049] In some embodiments, the transconductance satisfies the following condition:

[0050]

[0051] In the formula, G m It is transconductance; is the partial differential symbol; I D is the saturation leakage current; V G is the source-drain voltage.

[0052] In some embodiments, the saturation leakage current satisfies the following conditional formula:

[0053]

[0054] Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; VD Represents the drain voltage; V T represents the threshold voltage; μ N represents electron mobility.

[0055] In some embodiments, the transconductance satisfies the following condition:

[0056]

[0057] Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; V D represents the drain voltage; μ N represents electron mobility.

[0058] In some embodiments, the first comparison result and the second comparison result both include the electron mobility; the electron mobility is reduced, inducing a large number of electron-hole pairs in the gate oxide layer, so as to cause displacement damage to the device under test.

[0059] In some embodiments, before proton irradiating the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, the process includes: connecting the devices to be tested to a PCB test board; fixing the PCB test board on an XYZ moving platform, and using a laser collimator to align the center of the target chamber with the device to be tested.

[0060] Another embodiment of the present invention provides a method for testing displacement damage effects of an enhancement mode gallium nitride device, which specifically includes the following steps:

[0061] Step S210, conduct electrical performance test of the device under test before proton irradiation. Before grouping and numbering the devices under test, the enhanced cascode and depletion-type gallium nitride devices used for the experiment can be selected to conduct electrical performance test of the devices before proton irradiation. According to the sample device manuals of the two selected devices under test, the corresponding parameters are set in the semiconductor parameter analyzer. The determining factors must be set first to measure the gate-source voltage, that is, the drain voltage is 100mV, the gate-source voltage range is between 0-15V, and the saturation leakage current range is between 0-1A. Ensure that the performance of the two device samples under test is normal and highly consistent, and group and number the qualified samples. For example, the experiment can select 3 enhanced gallium nitride devices as one group and 3 depletion-type gallium nitride devices as another group; the data obtained from the electrical performance test is the first test result, and the first test result is recorded and saved according to the group number.

[0062] This test needs to test the transconductance G of the device under test. m , threshold voltage V T (The gate-source voltage that causes strong inversion at the source end of the channel region is called the threshold voltage of the MOS tube) and the saturation leakage current.

[0063] Step S220: performing a proton irradiation experiment on the device under test.

[0064] Proton irradiation experiments can be carried out on a 200MeV proton device (XiPAF). Fix the device to be tested on a PCB test board, and then fix the PCB test board on an XYZ precision mobile platform. Use a laser collimator to ensure that the center of the target chamber is at the center of the sensitive part of the device to be tested. The irradiation range is 2×2cm. During the irradiation process, for example, the proton energy can be set to 60MeV and the injection rate can be set to 1×108p / (cm 2 ·s), when the proton injection reaches 1×10 12 p / cm 2 That is, the irradiation is stopped, and no bias is applied to the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group during the irradiation process, and the experimental temperature is room temperature.

[0065] Step S230: Conduct electrical performance test of the device under test after proton irradiation, and record and process all data collected in the experiment.

[0066] After proton irradiation, the electrical performance test of the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group is performed again. The setting parameters of the semiconductor parameter analyzer can be consistent with those in step S210, and the data of the second test result obtained from the electrical performance test is saved. For example, the transfer characteristic curves of the two device groups can be drawn using Origin software, and the data of the measured first test result and the second test result can be imported into the Origin software, and the color, lines, symbols, etc. of the graph can be adjusted to obtain Figure 3 , Figure 4a and Figure 4b .

[0067] Among them, the transconductance G m The conditional expression is:

[0068]

[0069] In the formula, is the partial differential symbol; I D is the saturation leakage current; V G is the source-drain voltage. Figure 3 As shown in the figure, the change in source-drain current is smaller than the change in gate voltage, so the transconductance shows a decrease through partial differential calculation. The degradation of the transconductance peak can well evaluate the degree of damage to the gate region and the degradation of the channel electron mobility.

[0070] Step 240, analyzing the obtained transfer characteristic curve graph.

[0071] According to the data of the first test result and the second test result obtained from the electrical performance test, a first comparison result can be obtained, that is, the change of the test data of the enhancement-mode gallium nitride device. Figure 3As shown in the figure, after the device is irradiated with high-energy protons, the threshold voltage of the enhanced GaN device shows a significant negative drift, from 5.8V obtained before proton irradiation to 4.6V obtained after proton irradiation, a decrease of 1.2V; the saturation leakage current of the enhanced GaN device is reduced; the maximum transconductance of the enhanced GaN device is 0.324S·mm obtained before proton irradiation. -1 The test result after proton irradiation was 0.260S·mm -1 , reduced by about 19.75%, and the gate voltage corresponding to the maximum transconductance drifted negatively. The threshold voltage V T The negative drift of is mainly caused by the proton irradiation inducing a large number of electron-hole pairs in the gate oxide layer of the MOS tube. Since the mobility of electrons in the oxide layer is higher than that of holes, electrons can leave the gate oxide layer in a shorter time, while holes move relatively slowly in the oxide layer and may even be captured by intrinsic defects in the gate oxide layer, which eventually leads to a high surface density of trap charge N in the gate oxide layer. ot increases, making the threshold voltage V T After proton irradiation, acceptor-like defects are generated in the device, which will capture electrons and reduce the carrier density, thereby reducing the saturation leakage current. The drain current I D It can be expressed as:

[0072]

[0073] Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; V D Represents the drain voltage; V T represents the threshold voltage; μ N represents electron mobility.

[0074] Substituting equation 2 into equation 1 yields:

[0075]

[0076] The first comparison result can be obtained from the data of the first test result and the second test result obtained from the electrical performance test, that is, the maximum transconductance of the enhanced gallium nitride device in the first comparison result is 0.324S·mm obtained by the test before proton irradiation. -1 The test result after proton irradiation was 0.260S·mm -1 , reduced by about 19.75%, that is, the transconductance G m The electron mobility μ of the enhanced GaN device can be calculated by formula 3. N reduce.

[0077] High-energy proton irradiation causes acceptor-like defects in enhanced cascode GaN devices, which reduces electron mobility and induces a large number of electron-hole pairs in the gate oxide layer, causing displacement damage to the device. Figure 4a As shown in Figure 2, the threshold voltage of the depletion-mode GaN device does not change before and after proton irradiation, and the saturation leakage current changes slightly before and after proton irradiation, as shown in Figure 2. Figure 4b As shown in Figure 3, the transconductance of the depletion-mode GaN device has almost no change before and after proton irradiation. The electron mobility μ of the depletion-mode GaN device can be calculated by equation 3. N Almost no change. Figure 3 and Figure 4a , Figure 4b It can be concluded that the enhancement mode device is more sensitive to high energy proton irradiation, and it can be known that the sensitive area is at the gate.

[0078] Based on the same inventive concept, the second aspect of the present invention provides a testing system for displacement damage effect of an enhanced gallium nitride device, such as Figure 5 As shown, it includes: a grouping module 510, which is used to group and number the devices to be tested to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group; a first testing module 520, which is used to perform an electrical performance test on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and record a first test result; an irradiation module 530, which is used to perform proton irradiation on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group; a second testing module 540, which is used to perform an electrical performance test on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group after proton irradiation, and record a second test result; a first comparing module 550, which is used to obtain a first comparison result based on a comparison analysis of the second test result of the enhancement-mode gallium nitride device group and the first test result; a second comparing module 560, which is used to obtain a second comparison result based on a comparison analysis of the second test result of the depletion-mode gallium nitride device group and the first test result; and a determining module 570, which is used to determine a sensitive area of ​​the device to be tested to charge collection of the displacement damage effect based on the first comparison result and the second comparison result.

[0079] Among them, the embodiment of the present invention does not limit the specific shape and structure of each module. Those skilled in the art can arbitrarily set it according to the functional effects it implements, which will not be repeated here. In addition, the specific implementation process and implementation effects of the operating steps implemented by the above-mentioned modules in the embodiment of the present invention are the same as the specific implementation process and implementation effects of steps S110-S170 in the embodiment of the present invention. For details, please refer to the above statements, which will not be repeated here.

[0080] The above technical solution of the embodiment of the present invention has at least the following beneficial technical effects:

[0081] 1. In the embodiments of the present invention, high-energy protons are used as the irradiation source to irradiate the enhancement-mode GaN device. By analyzing the changes in the electrical properties of the device before and after proton irradiation, the generation mechanism of the displacement damage effect can be studied, thereby providing reinforcement suggestions and methods for the circuit design of the enhancement-mode GaN device, which is of great significance for improving the radiation resistance of the enhancement-mode GaN device.

[0082] 2. In the embodiment of the present invention, a radiation damage comparison test was conducted on two GaN devices with different structures. The comparison shows that the radiation resistance of the two devices is obviously different, and the enhanced GaN device is more sensitive to proton irradiation.

[0083] 3. The test method for the effect of high-energy proton irradiation on the performance of the enhanced gallium nitride device in the embodiment of the present invention can be performed without changing the device layout or the production process steps, which is conducive to the implementation of the experiment and improves the accuracy of the experimental data, making the experiment more suitable for actual application scenarios.

[0084] It should be understood that the above specific embodiments of the present invention are only used to illustrate or explain the principles of the present invention, and do not constitute a limitation of the present invention. Therefore, any modifications, equivalent substitutions, improvements, etc. made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. In addition, the appended claims of the present invention are intended to cover all changes and modifications that fall within the scope and boundaries of the appended claims, or the equivalent forms of such scope and boundaries.

Claims

1. A method for testing displacement damage effect of enhanced gallium nitride devices, characterized in that: include: The devices to be tested are grouped and numbered to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group; Conducting electrical performance tests on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and recording first test results; The enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group are subjected to proton irradiation; Conducting an electrical performance test on the enhanced-mode gallium nitride device group and the depletion-mode gallium nitride device group after proton irradiation, and recording a second test result; Based on the comparative analysis of the second test result and the first test result of the enhancement-mode gallium nitride device group, a first comparison result is obtained; Based on the comparative analysis of the second test result and the first test result of the depletion-mode gallium nitride device group, a second comparison result is obtained; A sensitive region of the device under test to charge collection due to displacement damage effect is determined based on the first comparison result and the second comparison result.

2. The testing method according to claim 1, characterized in that: The electrical performance test uses a semiconductor parameter analyzer, including the following setting parameters: Measure the gate-source voltage and set the drain voltage to 100mV; The gate-source voltage range is set to 0-15V; The saturation leakage current range is set to 0-1A.

3. The testing method according to claim 1, characterized in that: The proton irradiation of the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group comprises: The proton energy is 60 MeV; The injection rate is 1×10 7 -1×10 8 p / (cm 2 s); The injection volume is 1×10 12 p / cm 2 the following; The irradiation range is 2×2cm; No bias was applied during irradiation.

4. The testing method according to claim 1, characterized in that: The second test result and the first test result both include: Transconductance, threshold voltage, and saturation leakage current.

5. The testing method according to claim 4, characterized in that: The transconductance satisfies the following conditional formula: In the formula, G m It is transconductance; is the partial differential symbol; I D is the saturation leakage current; V G is the source-drain voltage.

6. The testing method according to claim 5, characterized in that: The saturation leakage current satisfies the following conditional formula: Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; V D Represents the drain voltage; V T represents the threshold voltage; μ N represents electron mobility.

7. The testing method according to claim 6, characterized in that: The transconductance satisfies the following conditional formula: Where Z is the number of positive charges; L is the gate length; C0 is the gate oxide capacitance per unit area; V D represents the drain voltage; μ N represents electron mobility.

8. The testing method according to claim 7, characterized in that: The first comparison result and the second comparison result both include the electron mobility; The electron mobility is reduced, and a large number of electron-hole pairs are induced in the gate oxide layer, so that the device to be tested is displaced and damaged.

9. The testing method according to claim 7, characterized in that: Before the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group are subjected to proton irradiation, the method comprises: Connect all devices under test to the PCB test board; The PCB test board is fixed on a mobile platform, and a laser collimator is used to align the center of the target chamber with the device to be tested.

10. A test system for displacement damage effect of enhanced gallium nitride device, characterized in that: include: A grouping module, which is used to group and number the devices to be tested to obtain an enhancement-mode gallium nitride device group and a depletion-mode gallium nitride device group; A first test module, which is used to perform an electrical performance test on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group, and record a first test result; An irradiation module, which is used to perform proton irradiation on the enhancement-mode gallium nitride device group and the depletion-mode gallium nitride device group; A second test module, which is used to perform an electrical performance test on the enhanced gallium nitride device group and the depletion gallium nitride device group after proton irradiation, and record a second test result; A first comparison module, which is used to obtain a first comparison result based on a comparison analysis of the second test result and the first test result of the enhancement mode gallium nitride device group; A second comparison module, which is used to obtain a second comparison result based on a comparison analysis of the second test result of the depletion-mode gallium nitride device group and the first test result; A determination module is used to determine a sensitive area of ​​the device under test to charge collection of displacement damage effects based on the first comparison result and the second comparison result.

Images