Method for manufacturing a light-emitting device and method for manufacturing a light-emitting component

Abstract

Provided is a manufacturing method capable of inexpensively manufacturing a light-emitting device and a light-emitting component. The light-emitting device has a light-emitting element, and the light-emitting element includes a semiconductor laminate and an electrode disposed on a second surface of the semiconductor laminate. The semiconductor laminate includes a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. The side surface of the semiconductor laminate is coated with a resin member. The method includes: a step of forming a resin layer in a state of stage A on a support; a step of opposing the surface of the resin layer to the first surface and placing the light-emitting element on the surface of the resin layer; a step of heating the resin layer at a first temperature to reduce the viscosity of the resin layer and causing the light-emitting element to sink by the self-weight of the light-emitting element so that the second surface of the semiconductor laminate is exposed; and a step of heating the resin layer at a second temperature higher than the first temperature and curing in a state where the second surface is exposed to form a resin member.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a light-emitting device and a method for manufacturing a light-emitting component. Background Art

[0002] There are known a light-emitting device and a light-emitting component including a light-emitting element (for example, refer to Patent Document 1 and Patent Document 2).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2017-228657

[0006] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2018-133304 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] As the uses of a light-emitting device and a light-emitting component including a light-emitting element expand, inexpensive light-emitting devices and light-emitting components are required.

[0009] Therefore, an object of the present invention is to provide a method for manufacturing a light-emitting device and a method for manufacturing a light-emitting component that can manufacture a light-emitting device and a light-emitting component at low cost.

[0010] Means for Solving the Problems

[0011] In order to achieve the above object, in the method for manufacturing a light-emitting device of the present invention, the light-emitting device has a light-emitting element, the light-emitting element includes a semiconductor laminate and an electrode, the semiconductor laminate includes a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, the side surface of the semiconductor laminate is covered with a resin member, the electrode is disposed on the second surface of the semiconductor laminate, and the method includes: a step of disposing a resin layer in an A-stage state on a support; a step of opposing an upper surface of the resin layer to the first surface and placing the light-emitting element on the upper surface of the resin layer; a step of heating the resin layer at a first temperature to reduce the viscosity of the resin layer, and causing the light-emitting element to sink by the self-weight of the light-emitting element so that the second surface of the semiconductor laminate is exposed; and a step of heating the resin layer at a second temperature higher than the first temperature and curing the resin layer in a state where the second surface is exposed, thereby forming the resin member.

[0012] In addition, a method for manufacturing a light-emitting component of the present invention includes: a step of preparing a light source, the light source including a light-emitting element, the light-emitting element including a semiconductor laminate and an electrode, the semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, the electrode being disposed on the second surface of the semiconductor laminate and at least the second surface being exposed to the outside; a step of preparing a light guide plate, the light guide plate including a first main surface and a second main surface opposite to the first main surface, and the first main surface having a recess; a step of disposing a resin layer in the recess in a state of stage A; a step of opposing the upper surface of the resin layer to the first surface of the light-emitting element and placing the light source on the upper surface of the resin layer; a step of heating the resin layer at a first temperature to reduce the viscosity of the resin layer and causing the light source to sink with the second surface of the semiconductor laminate exposed by the self-weight of the light source; and a step of heating the resin layer at a second temperature higher than the first temperature and curing in a state where the second surface is exposed, thereby forming the resin member.

[0013] Effects of the Invention

[0014] According to the above, a light-emitting device and a light-emitting component can be manufactured at low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1A FIG. is a schematic cross-sectional view showing an example of a manufacturing process of the light-emitting device of Embodiment 1.

[0016] Figure 1B FIG. is a schematic cross-sectional view showing an example of a manufacturing process of the light-emitting device of Embodiment 1.

[0017] Figure 1C FIG. is a schematic cross-sectional view showing an example of a manufacturing process of the light-emitting device of Embodiment 1.

[0018] Figure 1D FIG. is a schematic cross-sectional view showing an example of a manufacturing process of the light-emitting device of Embodiment 1.

[0019] Figure 1E FIG. is a schematic cross-sectional view showing an example of the light-emitting device 100 obtained by the manufacturing method of the light-emitting device of Embodiment 1.

[0020] Figure 1F FIG. is a schematic cross-sectional view showing an example of a manufacturing process of the light-emitting device of Modification 3 of Embodiment 1.

[0021] Figure 1G FIG. is a schematic cross-sectional view showing an example of a manufacturing method of the light-emitting device of Modification 3 of Embodiment 1.

[0022] Figure 1H It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Modification Example 4 of Embodiment 1.

[0023] Figure 1I It is a schematic cross-sectional view showing an example of the light-emitting device obtained by the manufacturing method of the light-emitting device according to Modification Example 5 of Embodiment 1.

[0024] Figure 2A It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Embodiment 2.

[0025] Figure 2B It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Embodiment 2.

[0026] Figure 2C It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Embodiment 2.

[0027] Figure 2D It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Embodiment 2.

[0028] Figure 2E It is a schematic cross-sectional view showing an example of the light-emitting device 200 obtained by the manufacturing method of the light-emitting device according to Embodiment 2.

[0029] Figure 3A It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to a modification of Embodiment 1.

[0030] Figure 3B It is a schematic cross-sectional view showing an example of the light-emitting device obtained by the manufacturing method of the light-emitting device according to a modification of Embodiment 1.

[0031] Figure 4A It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting device according to another modification of Embodiment 1.

[0032] Figure 4B It is a schematic cross-sectional view showing an example of the light-emitting device obtained by the manufacturing method of the light-emitting device according to another modification of Embodiment 1.

[0033] Figure 5A It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting module according to Embodiment 3.

[0034] Figure 5B It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting module according to Embodiment 3.

[0035] Figure 5C It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting module according to Embodiment 3.

[0036] Figure 5D It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting component of Embodiment 3.

[0037] Figure 5E It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting component of Embodiment 3.

[0038] Figure 5F It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting component of Embodiment 3.

[0039] Figure 6 It is in Figure 5E a schematic cross-sectional view showing the width W1 and height H1 of the light-emitting element, the depth D33 and width W33 of the recess 33, and the width W50 of the wall portion between adjacent recesses 33.

[0040] Figure 7A It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting component of Embodiment 4.

[0041] Figure 7B It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting component of Embodiment 4.

[0042] Figure 7C It is a schematic cross-sectional view showing an example of the manufacturing process of the light-emitting component of Embodiment 4.

[0043] Symbol Explanation

[0044] 1 Light-emitting element

[0045] 10 Semiconductor laminate

[0046] 11 First surface

[0047] 12 Second surface

[0048] 13 Side surface

[0049] 20 Electrode

[0050] 21 First electrode

[0051] 22 Second electrode

[0052] 24 Light reflection layer (second light reflection layer)

[0053] 25 Light reflection layer (first light reflection layer)

[0054] 30, 130 Resin member

[0055] 31, 131 Resin layer

[0056] 35 Support

[0057] 100 and 200 Light-emitting devices

[0058] 310 Light guide plate

[0059] 311 Upper surface

[0060] 312 Lower surface

[0061] 313 First recess

[0062] 315 Second recess

[0063] 330 Resin member

[0064] 331 Resin filling portion Detailed implementation manners

[0065] Hereinafter, while referring to the accompanying drawings, implementation manners for implementing the invention of the present disclosure will be described.

[0066] It should be noted that the manufacturing methods of the light-emitting device and the light-emitting component described below are to embody the technical idea of the invention of the present disclosure. Without special description, the invention of the present disclosure is not limited to the following.

[0067] In each of the accompanying drawings, components having the same function are sometimes given the same reference numerals. For the sake of easy explanation or understanding of the key points, sometimes for convenience, the implementation manners are shown separately, but the configurations shown in different implementation manners can be partially replaced or combined. In the following implementation manners, descriptions of matters common to the above are omitted, and only differences are described. In particular, the same effects brought about by the same configurations are not described in sequence in each implementation manner. The sizes, positional relationships, etc. of the components shown in each of the accompanying drawings are sometimes exaggerated for clarity of explanation. In addition, as a sectional view, sometimes an end view showing only the cut surface is used.

[0068] <Embodiment 1>

[0069] The manufacturing method of the light-emitting device according to Embodiment 1 of the present invention is a manufacturing method of a light-emitting device 100 including (i) a light-emitting element 1 and (ii) a resin member 30. The (i) light-emitting element 1 includes a semiconductor laminate 10 and electrodes 20. The semiconductor laminate 10 includes, for example, a first surface 11 as a light-emitting surface, a second surface 12 opposite to the first surface 11, and a side surface 13 between the first surface 11 and the second surface 12. The electrodes 20 include a first electrode 21 and a second electrode 22 disposed on the second surface 12 of the semiconductor laminate 10. The (ii) resin member 30 covers at least the side surface 13 of the semiconductor laminate 10.

[0070] In addition, the manufacturing method of the light-emitting device according to Embodiment 1 of the present invention includes:

[0071] (a) a step of configuring a resin layer 31 in a stage A state on a support 35;

[0072] (b) placing the light-emitting element 1 on the upper surface of the resin layer 31 in the A-stage state disposed on the support 35, facing the first surface 11 of the light-emitting element 1;

[0073] (c) heating the resin layer 31 at a first temperature to reduce the viscosity of the resin layer 31, and sinking the light emitting element 1 by utilizing its own weight so that the second surface 12 of the semiconductor stack 10 is exposed from the resin layer 31; and

[0074] (d) A step of heating the resin layer 31 at a second temperature higher than the first temperature to cure the resin layer 31 in a state where the second surface 12 is exposed from the resin layer, thereby forming the resin member 30 .

[0075] Hereinafter, each step will be described in detail.

[0076] (a) Step of arranging the resin layer 31

[0077] Here, by pasting a resin sheet in the A-stage state prepared in advance on the support 35, the configuration is as follows: Figure 1A The resin layer 31 in the state of stage A shown. The resin sheet can be pasted using, for example, a vacuum laminator. Specifically, the pressure is reduced to a given vacuum degree, and the pressure is applied by pressing with a film sheet. The configuration of the resin layer 31 in this process is not limited to the pasting of the resin sheet. For example, the resin layer 31 in the state of stage A can be configured by coating the resin in an uncured state on the support 35. Here, the state of stage A refers to the uncured state. In the state of stage A, specifically, the viscosity of the resin layer 31 in the uncured state is adjusted based on the specific gravity of the resin layer 31 and the dead weight of the light-emitting element 1, so that the light-emitting element 1 sinks by its own weight and the second surface 12 of the semiconductor stack 10 is exposed. In addition, stage A is not a liquid state, but a state without fluidity. For example, a liquid resin material containing a solvent such as cyclohexane is coated on a support, and then most of the solvent is volatilized, and the state that does not flow on the support is referred to as the stage A state or the uncured state.

[0078] In addition, as the resin constituting the resin layer 31, a thermosetting resin such as a silicone resin, an epoxy resin, an acrylic resin, etc. can be used. As a method for disposing the resin layer 31, methods such as roll coating, spraying, compression molding, etc. can be used. The resin layer 31 is preferably thicker than the thickness t (the distance between the first surface 11 and the second surface 12) of the semiconductor laminate 10 of the light-emitting element 1. Alternatively, the resin layer 31 can be thinner than the thickness t of the semiconductor laminate 10 of the light-emitting element 1. In the case where the resin layer 31 is thinner than the thickness t of the semiconductor laminate 1 of the light-emitting element 1, in the process of sinking the light-emitting element 1 described later, by utilizing the wetting and spreading of the resin on the side surface 13, the side surface 13 of the semiconductor laminate 10 of the light-emitting element 1 can be disposed in a manner that is entirely covered by the resin layer 31.

[0079] (b) Step of placing the light-emitting element 1

[0080] Here, in the case of maintaining the state of stage A in which the resin layer 31 disposed on the support 35 is held, as Figure 1B shown, the upper surface of the resin layer 31 is opposed to the first surface 11 of the light-emitting element 1, and the light-emitting element 1 is placed on the upper surface of the resin layer 31. According to the size of the target light-emitting device 100, the light-emitting elements 1 are placed at a given interval. Specifically, considering the thickness of the resin member 30 that covers the side surface 13 of the semiconductor laminate 10 of the light-emitting element 1, the light-emitting elements 1 are arranged in a matrix at a given interval, for example.

[0081] In addition, as a method for placing the light-emitting element 1 on the upper surface of the resin layer 31, there is no particular limitation. The light-emitting elements 1 can be placed one by one in sequence, or multiple light-emitting elements 1 can be placed together. For example, in the case of placing multiple light-emitting elements 1 together, a plurality of light-emitting elements disposed via a photosensitive adhesive on a support different from the support on which the above resin layer 31 is disposed (hereinafter referred to as the second support) are prepared. Next, laser is irradiated on the adhesive from the second support side to peel the multiple light-emitting elements from the second support, whereby the light-emitting elements 1 can be transferred together to the upper surface of the resin layer 31.

[0082] The semiconductor laminate 10 of the light-emitting element 1 includes, for example, a substrate such as sapphire or gallium nitride, an n-type semiconductor layer and a p-type semiconductor layer disposed on the substrate, and a light-emitting layer sandwiched therebetween. The light-emitting element 1 further includes a first electrode electrically connected to the n-type semiconductor layer and a second electrode electrically connected to the p-type semiconductor layer. It should be noted that the semiconductor laminate 10 may not have a substrate. In addition, as the structure of the light-emitting layer, it may be a structure having a single active layer such as a double heterojunction structure or a single quantum well structure (SQW), or a structure having an entire group of active layers such as a multiple quantum well structure (MQW). The light-emitting layer can emit visible light or ultraviolet light. As visible light, the light-emitting layer can emit light from blue to red. As the semiconductor laminate 10 including such a light-emitting layer, it may include, for example, InxAlyGa 1-x-y N (0 ≤ x, 0 ≤ y, x + y ≤ 1). The semiconductor laminate 10 may include at least one light-emitting layer capable of performing the above-described light emission. For example, the semiconductor laminate 10 may be a structure including one or more light-emitting layers between the n-type semiconductor layer and the p-type semiconductor layer, or a structure formed by repeating a structure including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in this order multiple times. When the semiconductor laminate 10 includes a plurality of light-emitting layers, it may include light-emitting layers having different emission peak wavelengths or light-emitting layers having the same emission peak wavelength. It should be noted that there may be a deviation of about several nm in the emission peak wavelengths being the same. As a combination of the emission peak wavelengths, it can be appropriately selected. For example, when the semiconductor laminate 10 includes two light-emitting layers, the light-emitting layers can be selected according to combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. In addition, the light-emitting layer may include a plurality of active layers having different emission peak wavelengths or a plurality of active layers having the same emission peak wavelength.

[0083] (c) Step of sinking the light-emitting element 1

[0084] Here, the resin layer 31 is heated at a first temperature to reduce the viscosity of the resin layer 31. Thus, due to the self-weight of the light-emitting element 1, the light-emitting element 1 sinks in such a manner that the second surface 12 of the semiconductor laminate 10 is exposed from the upper surface of the resin layer 31.

[0085] The first temperature for heating the resin layer 31 can be appropriately set so that the viscosity of the resin material in the A-stage state of the resin layer 31 is reduced, as Figure 1CAs shown, the second surface 12 of the semiconductor laminate 10 is exposed and the resin of the resin layer 31 is in contact with the entire side surface 13 of the semiconductor laminate 10. For example, the first temperature can be set with reference to a database to a temperature that achieves a desired settling state, the database storing the type of resin material constituting the resin layer, the viscosity at the A-stage state, and the settling state of the light-emitting element when the temperature for heating the resin layer is changed with respect to the shape and weight of the light-emitting element.

[0086] Here, the settling state of the light-emitting element refers to the positional relationship between the upper surface of the resin layer between the light-emitting elements and the electrode formation surface of the light-emitting element, etc. That is, the database for reference stores, for example, the temperature at which the upper surface of the resin layer between adjacent mounted light-emitting elements is substantially on the same plane as the electrode formation surface of the light-emitting element, the temperature at which the upper surface of the resin layer between the light-emitting elements is below the plane including the electrode formation surface of the light-emitting element, the temperature at which the upper surface of the resin layer between the light-emitting elements is above the plane including the electrode formation surface of the light-emitting element, etc., and can be appropriately selected based on the stored information and considering the final shape of the light-emitting device to be manufactured. For example, for the resin layer 31 containing a thermosetting silicone resin, epoxy resin, or acrylic resin, the first temperature is a temperature in the range of 70°C to 100°C. In addition, the heating time can be set to, for example, 10 minutes or more.

[0087] In addition, the first temperature does not need to be maintained at a specific temperature for a given time and can be continuously increased. That is, as long as the temperature range in which the light-emitting element can sink into the resin layer in the A-stage state is included within the range from the starting temperature to the ending temperature (for example, the second temperature) of the temperature increase, the target settling state can be achieved. For example, when the second temperature described later is set to 150°C, it is preferably increased from about 60°C to 150°C in about 1 hour, and particularly preferably slowly increased from 70°C including the first temperature to 100°C.

[0088] (d) Step of curing the resin layer 31 to form the resin member 30

[0089] Here, the resin layer 31 is heated at a second temperature higher than the first temperature and cured in a state where the second surface 12 is exposed. Thereby, the resin member 30 is formed.

[0090] The second temperature for curing the resin layer 31 can be appropriately set based on the curing temperature of the resin material constituting the resin layer 31. For example, for the resin layer 31 containing a thermosetting silicone resin, epoxy resin, or acrylic resin, the second temperature is a temperature in the range of 150°C to 200°C. The heating time can be set to, for example, 1 hour or more and 8 hours or less.

[0091] For the temperature to rise from the first temperature in the process of sinking the light-emitting element 1 to the second temperature in this process, the temperature can be continuously raised from the first temperature to the second temperature without being set to a low temperature, or after temporarily lowering the temperature from the first temperature to, for example, room temperature (20 ± 5°C), it can be raised to the second temperature again, and it can be appropriately set considering the efficiency of the manufacturing process, etc.

[0092] After curing the resin layer 31, as Figure 1D shown, the resin member 30 is cut between adjacent light-emitting elements 1. The side surface 13 of each light-emitting element 1 is covered with the resin member 30 having a given thickness in the direction adjacent to the light-emitting element 1.

[0093] Next, as Figure 1E shown, the support is removed from the light-emitting device.

[0094] As described above, it is possible to manufacture, for example, a light-emitting device that includes one light-emitting element 1 and in which the side surface 13 of the light-emitting element 1 is covered with a resin member having a given thickness.

[0095] It should be noted that this cutting process can be carried out as needed. For example, by cutting the resin member 30 in such a way as to include one light-emitting element 1, a light-emitting device having one light-emitting element can be manufactured. Or, by cutting the resin member 30 in such a way as to include a plurality of light-emitting elements 1, a light-emitting device having a plurality of light-emitting elements 1 can be manufactured. In the case of having a plurality of light-emitting elements 1, a linear light-emitting device in which the plurality of light-emitting elements 1 are arranged in a row can be manufactured. Or, a planar light-emitting device in which a plurality of light-emitting elements are arranged in a matrix can be manufactured.

[0096] According to the method for manufacturing a light-emitting device of the above-described Embodiment 1, heating is performed at a first temperature lower than the second temperature which is the curing temperature at which the resin layer is cured, the viscosity of the resin layer is reduced, and by the self-weight of the light-emitting element, the light-emitting element is sunk in such a way as to expose the second surface 12 of the semiconductor laminate. Thus, for example, without using special equipment such as a load, by simply changing the temperature, it is possible to manufacture a light-emitting device in which surfaces other than one surface of the laminated structure of the light-emitting element are covered with a resin layer, and it can be manufactured at low cost.

[0097] In addition, the method for manufacturing a light-emitting device of Embodiment 1 can be variously modified as follows, and various light-emitting devices can be manufactured.

[0098] Modification Example 1

[0099] The method for manufacturing a light-emitting device of Modification Example 1 is a method for manufacturing a light-emitting device including a light-emitting element 1 and a resin member 30, and the resin member 30 contains a phosphor that performs wavelength conversion on light from the light-emitting element 1.

[0100] Specifically, in the manufacturing method of the light-emitting device according to the first modification of the first embodiment, as the resin layer 31, a resin containing phosphor particles is used. By immersing the light-emitting element 1 in the resin layer 31 containing phosphor particles and curing it, a light-emitting device can be manufactured in which the surface of the semiconductor laminate except the second surface 12 is coated with a wavelength conversion member.

[0101] It should be noted that the specific gravity and / or viscosity of the resin layer 31 containing particles such as phosphor vary depending on the particle diameter, particle size distribution, content, etc. of the phosphor particles contained in the resin. Therefore, the state in stage A can be appropriately set in consideration of these.

[0102] As the phosphor, yttrium / aluminum / garnet-based phosphors (e.g., Y 3 (Al,Ga) 5 O 12 :Ce), lutetium / aluminum / garnet-based phosphors (e.g., Lu 3 (Al,Ga) 5 O 12 :Ce), terbium / aluminum / garnet-based phosphors (e.g., Tb 3 (Al,Ga) 5 O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO 4 ) 6 Cl 2 :Eu), SAE-based phosphors (e.g., Sr 4 Al 14 O 25 :Eu), chlorosilicate-based phosphors (e.g., Ca 8 MgSi 4 O 16 Cl 2 :Eu), β-sialon-based phosphors (e.g., (Si,Al) 3 (O,N) 4 :Eu), α-sialon-based phosphors (e.g., Mz(Si,Al) 12 (O,N) 16 :Eu (where 0 < z ≤ 2, and M is Li, Mg, Ca, Y, and lanthanide elements other than La and Ce)), SLA-based phosphors (e.g., SrLiAl 3 N 4 :Eu), CASN-based phosphors (e.g., CaAlSiN 3 :Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN 3 :Eu) and other nitride-based phosphors, KSF-based phosphors (e.g., K 2 (Si,Al)F6 :Mn), KSAF-based phosphors (e.g., K 2 Si 0.99 Al 0.01 F 5.99 :Mn) or MGF-based phosphors (e.g., 3.5MgO·0.5MgF 2 ·GeO 2 :Mn), etc., fluoride-based phosphors, phosphors having a perovskite structure (e.g., CsPb(F,Cl,Br,I) 3 ), or quantum dot phosphors (e.g., CdSe, InP, AgInS 2 or AgInSe 2 ), etc. As the phosphor added to the resin member 30, one kind of phosphor can be used, or a plurality of kinds of phosphors can be used.

[0103] In addition, as the KSAF-based phosphor, it can have a composition represented by the following formula (I).

[0104] M 2 [Si p Al q Mn r F s (I)

[0105] In formula (I), M represents an alkali metal and can at least contain K. Mn can be a tetravalent Mn ion. p, q, r, and s can satisfy 0.9 ≤ p + q + r ≤ 1.1, 0 < q ≤ 0.1, 0 < r ≤ 0.2, 5.9 ≤ s ≤ 6.1. Preferably, it can be 0.95 ≤ p + q + r ≤ 1.05 or 0.97 ≤ p + q + r ≤ 1.03, 0 < q ≤ 0.03, 0.002 ≤ q ≤ 0.02 or 0.003 ≤ q ≤ 0.015, 0.005 ≤ r ≤ 0.15, 0.01 ≤ r ≤ 0.12 or 0.015 ≤ r ≤ 0.1, 5.92 ≤ s ≤ 6.05 or 5.95 ≤ s ≤ 6.025. For example, it can be exemplified by K 2 [Si 0.946 Al 0.005 Mn 0.049 F 5.995 , K 2 [Si 0.942 Al 0.008 Mn 0.050 F 5.992 , K 2 [Si 0.939 Al 0.014 Mn 0.047 F 5.986 represents the composition. According to such KSAF-based phosphors, red light emission with high brightness and a narrow full width at half maximum of the emission peak wavelength can be obtained.

[0106] Modification Example 2

[0107] The manufacturing method of the light-emitting device of Modification Example 2 is a manufacturing method of a light-emitting device including a light-emitting element 1 and a resin member 30, and the resin member 30 includes a light diffusing agent that reflects light from the light-emitting element 1.

[0108] Specifically, in the manufacturing method of the light-emitting device of Modification Example 2 of Embodiment 1, as the resin layer 31, a resin containing particles of a light diffusing agent such as titanium oxide, silicon oxide, aluminum oxide, zinc oxide, etc. is used. By immersing the light-emitting element 1 in the resin layer 31 containing particles of the light diffusing agent and curing it, a light-emitting device provided with a light reflection layer on a surface other than the second surface 12 can be manufactured, for example.

[0109] The light-emitting device manufactured by the manufacturing method of Modification Example 2 above can be applied to, for example, the manufacturing of a light-emitting device that emits light from the second surface 12 side where the electrode is disposed.

[0110] In addition, in the manufacturing method of Modification Example 2, by removing the resin member 30 disposed on the first surface 11 of the light-emitting element 1, or by immersing the light-emitting element 1 in the resin layer 31 in such a manner that the first surface 11 of the light-emitting element 1 is in contact with the support 35 and curing it, a light-emitting device in which the resin member 30 is not disposed on the first surface 11 of the light-emitting element 1 can be manufactured. The light-emitting device manufactured in this way can reflect the light emitted from the side surface of the light-emitting element 1 and emit it from the first surface 11 of the light-emitting element 1.

[0111] It should be noted that the specific gravity and / or viscosity of the resin layer 31 containing particles such as a light diffusing agent vary depending on the particle diameter, particle size distribution, content, etc. of the light diffusing agent particles contained in the resin. Therefore, the A-stage state can be appropriately set in consideration of these.

[0112] Modification Example 3

[0113] The manufacturing method of the light-emitting device of Modification Example 3 is a manufacturing method of a light-emitting device including a light-emitting element 1, a light reflection layer (hereinafter referred to as the first reflection layer) provided above the first surface 11 of the light-emitting element 1, and a light-transmissive resin member 30 provided so as to cover the side surface 13 of the light-emitting element 1.

[0114] Specifically, in the manufacturing method of the light-emitting device of Embodiment 1, as Figure 1F shown, the cured first light reflection layer 25 is disposed on the upper surface of the support 35, and the resin layer 31 is disposed on the first light reflection layer 25. For the first light reflection layer 25, a material in a pre-cured state can be formed or purchased and disposed on the support. Alternatively, for the first light reflection layer 25, it can be prepared by disposing a liquid light reflection member on the support and then curing it by heating or the like.

[0115] Next, as shown in Figure 1G FIG. [not provided], the light-emitting element 1 is immersed in the resin layer 31 and cured, and the monolithic separation is performed in a state where the first light reflection layer 25 remains above the first surface 11 of the light-emitting element 1.

[0116] Thereby, a light-emitting device having a so-called bat-wing light distribution that suppresses light emitted upward from the first surface 11 of the light-emitting element 1 and emits light efficiently from the side surface 13 of the light-emitting element 1 can be manufactured.

[0117] It should be noted that in the manufacturing method of this modification 3, a resin member 30 in which the resin layer 31 contains a phosphor and has a wavelength conversion function can be used.

[0118] In addition, in the manufacturing method of the light-emitting device of modification 3, the position where the light-emitting element 1 is immersed in the resin layer 31 can be adjusted by changing the thickness of the resin layer 31, adjusting the viscosity of the resin layer 31, etc., thereby changing the distance between the light reflection layer 25 and the first surface 11 of the light-emitting element 1.

[0119] Thereby, a light-emitting device having different bat-wing light distribution characteristics can be manufactured.

[0120] Modification 4

[0121] Regarding the manufacturing method of modification 4, in the manufacturing method of the light-emitting device of Embodiment 1 or Modifications 1 to 3, after the resin member 30 is formed, as shown in Figure 1H FIG. [not provided], a step of disposing a light reflection layer 24 (hereinafter referred to as the second light reflection layer) that covers the second surface 12 and the side surface of the electrode 20 is further provided. The step of disposing the second light reflection layer 24 uses, for example, roll coating, spraying, compression molding, etc., and as shown in Figure 1H FIG. [not provided], the second light reflection layer 24 is disposed on the upper surface of the resin member 30 and the second surface 12 of the light-emitting element 1. At this time, the second light reflection layer 24 is disposed so as to cover the side surface of the electrode 20 and the upper surface of the electrode 20 is exposed. Alternatively, the second light reflection layer 24 can be disposed so as to cover the side surface and the upper surface of the electrode 20, and then ground from the upper surface of the second light reflection layer 24, whereby a part of the electrode 20 and a part of the second light reflection layer 24 are removed, and the surface of the electrode 20 is exposed from the second light reflection layer 24. It should be noted that the surface of the electrode 20 exposed from the second light reflection layer 24 becomes the new upper surface of the electrode 20.

[0122] The light-emitting device manufactured by the manufacturing method of the above modification 4 can reflect the light entering the second surface 12 side and emit it from the first surface 11 by including the second light reflection layer 24 that covers the second surface 12 and the side surface of the electrode 20, and can emit the emitted light efficiently. It should be noted that the figures [not provided] in the translation are placeholders as the original text does not clearly state the figure numbers. You may need to replace them with the actual figure numbers according to the original patent document.

[0123] Modification Example 5

[0124] Regarding the manufacturing method of Modification Example 5, in the manufacturing method of Modification Example 3, a step of disposing a second light reflection layer that covers the second surface 12 and the side surfaces of the electrodes 20 of Modification Example 4 is further included.

[0125] As Figure 1I shown, the light-emitting device 100A manufactured by the manufacturing method of Modification Example 5 described above includes: a first light reflection layer 25 provided above the light-emitting element 1, a light-transmissive resin member 30 provided so as to cover the light-emitting surface and the side surfaces of the light-emitting element 1, and a second light reflection layer 24 that covers the surface of the light-emitting element on which the electrodes are formed and the side surfaces of the electrodes 21 and 22.

[0126] In addition, in the light-emitting device 100A, the light reflection layers 24 and 25 can be formed, for example, of a resin containing titanium oxide, silicon oxide, aluminum oxide, zinc oxide, etc. as a light diffusing agent. As a material for such a resin, for example, silicone resin, epoxy resin, acrylic resin, etc. can be used. In addition, the light reflection layers 24 and 25 can be, for example, metal layers such as platinum, silver, rhodium, aluminum, or a distributed Bragg reflector (DBR). In addition, the light reflection layers 24 and 25 can be inorganic members.

[0127] In addition, the distance d1 from the side surface of the light-emitting element 1 to the outer side surface of the resin member 30 is preferably longer than the distance d2 from the upper surface of the light-emitting element 1 to the upper surface of the resin member 30. Thereby, compared with the light propagating to the upper surface side of the resin member 30, the light emitted from the side surface of the light-emitting element 1 is more likely to propagate to the side surface side, and the proportion of the light guided out from the side surface of the light-emitting device 100A can be increased. It should be noted that the distance d1 from the side surface of the light-emitting element 1 to the side surface of the resin member 30 is preferably a distance of 1.5 times or more and 2.5 times or less, more preferably about 2 times the distance d2 from the upper surface of the light-emitting element 1 to the upper surface of the resin member 30.

[0128] In addition, the light-emitting device 100A can obtain white light by disposing a sheet-like wavelength conversion member containing the above phosphor (hereinafter referred to as a wavelength conversion sheet) above it. For example, a light-emitting device capable of emitting blue light can be combined with a wavelength conversion sheet containing a phosphor capable of emitting yellow light to obtain white light. In addition, a light-emitting device capable of emitting blue light can also be combined with a wavelength conversion sheet containing a phosphor capable of emitting red light (hereinafter referred to as a red phosphor) and a phosphor capable of emitting green light (hereinafter referred to as a green phosphor). In addition, a light-emitting device capable of emitting blue light can also be combined with a plurality of wavelength conversion sheets. As the plurality of wavelength conversion sheets, for example, a wavelength conversion sheet containing a red phosphor and a wavelength conversion sheet containing a green phosphor can be selected. In addition, a light-emitting device having a light-emitting element capable of emitting blue light and a translucent member containing a red phosphor can be combined with a wavelength conversion sheet containing a green phosphor.

[0129] <Embodiment 2>

[0130] The manufacturing method of the light-emitting device according to Embodiment 2 of the present invention is a manufacturing method of the light-emitting device 200, and the light-emitting device 200 has a light-emitting device 100 in which a phosphor (hereinafter referred to as a first phosphor) is contained in a resin member 30 manufactured by the manufacturing method of Modification 1 of Embodiment 1, and a resin layer 130 containing a second phosphor different from the first phosphor is further disposed on the resin member 30 of the light-emitting device 100.

[0131] First, a light-emitting device 100 in which a first phosphor is contained in a resin member 30 is prepared by the manufacturing method of Modification 1 of Embodiment 1.

[0132] While preparing the light-emitting device 100, a resin containing a second phosphor and in an uncured state is disposed on the support 35 in the same manner as in the step of disposing the resin layer 31 in (a) of Embodiment 1, and the resin layer 131 in the state of Stage A as shown is disposed. Based on the specific gravity of the resin layer 131 and the self-weight of the light-emitting device 100, the viscosity of the resin layer 131 in the uncured state is adjusted so that the light-emitting device 100 sinks by its own weight with the second surface 12 of the semiconductor laminate 10 exposed. In addition, the resin contained in the resin layer 131 can be the same resin as that used in Embodiment 1. Preferably, the same resin as the resin constituting the resin layer 31 in Embodiment 1 is used. Figure 2A Next, in the same manner as in the step of placing the light-emitting element 1 in (b) of Embodiment 1, while maintaining the state of Stage A of the resin layer 131 disposed on the support 35, as shown in

[0133] Figure 2B Figure 2BAs shown, the light-emitting device 100 is placed with the upper surface of the resin layer 131 facing the light-emitting surface of the light-emitting device 100. For the light-emitting device 100, in the target light-emitting device 200, the resin members 130 covering the sides of the light-emitting device 100 are arranged at a given interval, for example, in a matrix.

[0134] Next, in the same manner as the step of lowering the light-emitting element 1 in (c) of the first embodiment, as Figure 2C shown, the resin layer 131 is heated to a first temperature to reduce the viscosity of the resin layer 131, and the light-emitting device 100 is lowered by its own weight so that the electrode formation surface of the light-emitting device 100 is exposed.

[0135] Hereinafter, in the same manner as the step of curing the resin layer 31 to form the resin member 30 in (d) of the first embodiment, the resin layer 131 is heated to a second temperature higher than the first temperature and cured. As Figure 2D shown, cutting is performed in such a way that the resin member 130 is arranged between adjacent light-emitting devices 100, and the resin member 130 covers the sides of each light-emitting device 100 with a given thickness. Figure 2E A cross-section of the light-emitting device 200 after removing each support is shown.

[0136] According to the manufacturing method of the light-emitting device of the second embodiment described above, a light-emitting device can be manufactured without using special equipment such as a load. The light-emitting device is the light-emitting device 200 including the light-emitting element 1, the resin member 30 covering the light-emitting element 1 (except the second surface 12 of the light-emitting element 1), and the second resin member 130 covering the resin member 30, and can be manufactured at low cost.

[0137] In the light-emitting devices of the first and second embodiments described above, an example is shown in which in the step of lowering the light-emitting element 1 or the light-emitting device 100 in (c), the light-emitting element 1 or the light-emitting device 100 is lowered in such a way that the surfaces of the resin layers 31 or 131 between adjacent light-emitting elements 1 or light-emitting devices 100 are substantially flat.

[0138] However, the manufacturing method of the light-emitting device of the present invention is not limited to this.

[0139] For example, as Figure 3A shown, the light-emitting element 1 or the light-emitting device 100 can be lowered in such a way that the surfaces of the resin layers 31 or 131 between adjacent light-emitting elements 1 or light-emitting devices 100 become concave curved surfaces.

[0140] In order to lower it in such a state, the viscosity of the resin layer 31 or 131 in the A-stage state, the first temperature for heating, and the wettability of the resin layer 31 or 131 with respect to the side surfaces of the light-emitting element 1 or the light-emitting device 100 can be appropriately adjusted.

[0141] It should be noted that Figure 3B shows a cross-section of the light-emitting device after curing, cutting, and removing the support 35 from the Figure 3A state.

[0142] In addition, Figure 3B the light-emitting device shown may include a light reflection layer (corresponding to the Figure 1I second light reflection layer 24 shown), the light reflection layer covering the second surface of the light-emitting element and the side surfaces of the electrodes, and continuously covering the inclined surface of the resin member 30 from the second surface of the light-emitting element. When configured as described above, in the case where the resin layer 30 is made of a light-transmissive resin, the light reflected by the inclined surface of the resin member 31 covered by the light reflection layer can be guided to the outside. In order to manufacture the light-emitting device, a light reflection layer covering the second surface of the light-emitting element, the side surfaces of the electrodes, and the concave surface of the resin layer 31 can be disposed and cured at the stage before singulation as shown in Figure 3A shown, and then singulation is performed.

[0143] In addition, as shown in Figure 4A the light-emitting element 1 or the light-emitting device 100 can be sunk in such a manner that the resin layer 30 or 130 covers the side surface of the light-emitting element 1 or covers up to the middle of the side surface of the light-emitting device 100.

[0144] In order to sink it in such a state, the weight of the light-emitting element 1 or the light-emitting device 100, the viscosity of the resin layer 31 or 131, the first temperature for heating, and the wettability of the resin layer 31 or 131 with respect to the side surface of the light-emitting element 1 or the light-emitting device 100 can be appropriately adjusted.

[0145] It should be noted that Figure 4B shows a cross-section of the light-emitting device after curing, cutting, and removing the support 35 from the Figure 4A state.

[0146] <Embodiment 3>

[0147] The manufacturing method of the light-emitting device according to Embodiment 3 of the present invention is different from the manufacturing method of the light-emitting device according to Embodiment 1 in that it includes a step of preparing a resin layer 31 having a recess 33. In Embodiment 3, the recess 33 includes a bottom surface 33a on which the light-emitting element 1 is placed and side surfaces 33b spaced apart from the side surface 13 of the placed light-emitting element 1 by a given interval. In the step of placing the light-emitting element, the light-emitting element 1 is placed on the bottom surface 33a.

[0148] Except for the above, the manufacturing method of the light-emitting device according to Embodiment 3 is configured in the same manner as the manufacturing method of the light-emitting device according to Embodiment 1.

[0149] Hereinafter, for the manufacturing method of the light-emitting device of Embodiment 3, the differences from the manufacturing method of the light-emitting device of Embodiment 1 will be described in detail centering on them.

[0150] (a) Step of preparing the resin layer 31 having the recess 33

[0151] The step of preparing the resin layer 31 having the recess 33 can be prepared by purchasing the resin layer 31 having the recess 33, or can be prepared by providing the recess 33 on the resin layer 31 through the following steps (a1) and (a2).

[0152] (a1) Step of disposing the resin layer 31

[0153] Here, by pasting a resin sheet in the A-stage state prepared in advance on the support 35, the resin layer 31 in the A-stage state as shown in Figure 5A is disposed. The pasting of the resin sheet can be performed using a vacuum laminator, for example. Further, for example, the resin layer 31 in the A-stage state can also be disposed by coating an uncured resin on the support 35. Here, the A-stage state means the uncured state described in Embodiment 1.

[0154] (a2) Step of providing the recess 33 on the upper surface of the resin layer 31

[0155] Here, after the resin layer 31 is disposed on the support 35, before the light-emitting element 1 is placed, a recess is provided at the position on the upper surface of the resin layer 31 where the light-emitting element 1 is to be placed. For example, as shown in Figure 5B and 5C , after the stamper 50 is pressed into the resin layer 31 in the A-stage state from the upper surface to a given depth and then the stamper 50 is removed, the recess 33 is provided in the resin layer 31 as shown in Figure 5D .

[0156] The recess 33 can be formed using a mold in which a plurality of stampers 50 are integrated, and can be formed by pressing the stamper 50 adsorbed to the tip of the opening chuck of the die bonder into a given depth at a given position (the position where the light-emitting element is to be placed) while sequentially moving the stamper 50.

[0157] The shape of the recess 33 can be set according to the type of the resin material forming the resin layer 31, the viscosity in the A-stage state, and the shape and weight of the light-emitting element, so that the light-emitting element 1 is in a desired settling state when the resin layer 31 reaches the first temperature. That is, the settling state of the light-emitting element 1 when the state where the light-emitting element 1 is placed on the bottom surface of the recess 33 of the resin layer 31 reaches the first temperature varies not only with the type of the resin material forming the resin layer 31, the viscosity in the A-stage state, and the shape and weight of the light-emitting element 1, but also with the shape of the recess 33 and the interval between adjacent recesses 33. In addition, for the settling state of the light-emitting element 1, even if the resin material forming the resin layer, the viscosity of the resin material in the A-stage state, and the first temperature are the same, it sometimes depends on the shape of the recess 33 and the interval between adjacent recesses 33. As the settling state of the light-emitting element 1, for example, it is a state where the upper surface of the resin layer between adjacent mounted light-emitting elements is substantially in the same plane as the electrode formation surface of the light-emitting element (hereinafter, referred to as state 1). In addition, as the settling state of the light-emitting element 1, for example, it is a state where the upper surface of the resin layer between the light-emitting elements is below the plane including the electrode formation surface of the light-emitting element (hereinafter, referred to as state 2). In addition, as the settling state of the light-emitting element 1, for example, it is a state where the upper surface of the resin layer between the light-emitting elements is above the plane including the electrode formation surface of the light-emitting element (hereinafter, referred to as state 3).

[0158] Regarding the specific setting method of the recess, since it is also related to the first temperature and the like, it will be described later.

[0159] (b) Step of mounting the light-emitting element 1

[0160] Here, in the state where the A-stage state of the resin layer 31 is maintained, as Figure 5E shown, the light-emitting elements 1 are respectively mounted on the bottom surface 33a of the recess 33. The light-emitting element 1 is preferably mounted, for example, in such a manner that its central axis (the central axis perpendicular to the bottom surface) coincides with the central axis of the recess 33 (the central axis perpendicular to the bottom surface 33a). Here, as long as the deviation between the central axes is within the deviation range during the mounting of the light-emitting element 1, it is regarded as coinciding.

[0161] In addition, as a method of respectively mounting the light-emitting elements 1 on the bottom surface 33a of the recess 33, there is no particular limitation. The light-emitting elements 1 can be sequentially mounted one by one, or a plurality of light-emitting elements 1 can be mounted together. For example, in the case of mounting a plurality of light-emitting elements 1 together, a plurality of light-emitting elements arranged on a support different from the support on which the resin layer 31 is disposed (hereinafter, referred to as the second support) by means of a photosensitive adhesive are prepared. Then, the adhesive is irradiated with laser light from the second support side, and the plurality of light-emitting elements are peeled off from the second support, whereby each light-emitting element 1 can be transferred together to the bottom surface 33a of the recess 33.

[0162] (c) Step of sinking the light-emitting element 1

[0163] Here, the resin layer 31 is heated at the first temperature to reduce the viscosity of the resin layer 31. As shown in Figure 5F , the side surface of the resin-coated semiconductor laminate 10 surrounding the side wall of the softened recess 33 is used to sink the light-emitting element 1 in such a manner that the second surface 12 of the semiconductor laminate 10 is exposed from the upper surface of the resin layer 31.

[0164] (d) Step of curing the resin layer 31 to form the resin member 30

[0165] Here, the resin layer 31 is heated at the second temperature higher than the first temperature and cured in a state where the second surface 12 is exposed. Thus, the resin member 30 is formed.

[0166] Hereinafter, in the same manner as in the first embodiment, the resin member is cut between adjacent light-emitting elements 1, and the light-emitting device is separated from the support.

[0167] Setting of the first temperature and the shape of the recess

[0168] The first temperature and the shape of the recess 33 are set in consideration of the type of the resin material forming the resin layer 31 and the viscosity at the A-stage state, as well as the shape and weight of the light-emitting element, so as to achieve the desired states of State 1 to State 3. For example, the shape of the recess 33 can be set by considering the type of the resin material forming the resin layer 31, the shape and weight of the light-emitting element, and referring to a database storing the viscosity at the A-stage state of the resin material, the first temperature, the shape of the recess 33, and the interval between adjacent recesses 33 that are respectively optimized to achieve the desired states of State 1 to State 3. The database stores, for example, the viscosity at the A-stage state, the first temperature, the shape of the recess 33, and the interval between adjacent recesses 33 that are optimized for each resin material for the light-emitting element used to achieve the states of State 1 to 3. Each parameter can be obtained through experiments or the like. It should be noted that the database stores, for example, the parameters optimized for various combinations of the resin materials to be used and the light-emitting elements to be used. Thus, various combinations of the resin material and the light-emitting element can be selected, and further, States 1 to 3 can be selected according to the purpose.

[0169] In addition, the manufacturing method of the light-emitting device of the third embodiment depends on the shape of the recess 33, and it is confirmed that the positional accuracy when the light-emitting element 1 is placed on the bottom surface of the recess 33 can be maintained even after the light-emitting element 1 is sunk into the resin layer 31 and cured.

[0170] The maintenance of this positional accuracy mainly depends on Figure 6The width W1 and height H1 of the light-emitting element 1 shown, the depth D33 and width W33 of the concave portion 33, and the width W50 of the wall portion between adjacent concave portions 33. In other words, in order to maintain this positional accuracy, the depth D33 and width W33 of the concave portion 33 and the width W50 of the wall portion between adjacent concave portions 33 can be appropriately set in consideration of the width W1 and height H1 of the light-emitting element 1, and the depth D33 and width W33 of the concave portion 33. In order to effectively obtain the effect of maintaining this positional accuracy, the depth D33 of the concave portion 33 is preferably greater than the height H1 of the light-emitting element 1. The concave portion 33 is formed, for example, to have a depth of 100 μm to 200 μm, and in order to maintain the positional accuracy when the light-emitting element is arranged, it is preferably deeper than the thickness of the light-emitting element. For example, when a light-emitting element with a thickness of 150 μm is arranged, the concave portion 33 is formed deeper than 150 μm. Here, the thickness of the light-emitting element refers to the thickness of the portion other than the thickness of the electrode.

[0171] As described above, in the manufacturing method of the light-emitting device according to the third embodiment, by adjusting the shape of the concave portion 33 and the interval between the concave portions, it is possible to maintain the positional accuracy of the light-emitting element at the time of placement even after the resin layer is cured.

[0172] Therefore, the first temperature and the shape setting of the concave portion are preferably set in consideration of the resin forming the resin layer 31 and the shape and weight of the light-emitting element so as to be in the desired states of State 1 to State 3 and to obtain the effect of suppressing positional deviation.

[0173] That is, the shape setting of the concave portion 33 is preferably set in consideration of the resin forming the resin layer 31 and the shape and weight of the light-emitting element and with reference to a database that stores the A-stage state of the resin, the first temperature, the shape of the concave portion 33, and the interval between adjacent concave portions 33 that are respectively optimized in such a way as to achieve the desired states of State 1 to State 3 and to obtain the effect of suppressing positional deviation. Of course, the database stores, for example, parameters that are respectively optimized for combinations of a plurality of resins to be used and a plurality of light-emitting elements to be used.

[0174] According to the manufacturing method of the light-emitting device according to the third embodiment configured as described above, the positional accuracy of the light-emitting element can be improved, and a light-emitting device with a desired configuration can be easily manufactured.

[0175] <Embodiment 4>

[0176] The manufacturing method of the fourth embodiment of the present invention is a manufacturing method of a light-emitting module in which a plurality of light sources are arranged in a matrix on a light guide plate. Hereinafter, while referring to Figures 7A to 7C, which will be described in detail below. It should be noted that in the following description, an example is given in which a plurality of light-emitting devices 100 manufactured by the manufacturing method of Embodiment 1 are used as light sources. However, the manufacturing method of Embodiment 4 is not limited thereto. For example, the light-emitting element 1 shown in Embodiment 1 can be used as a light source, or a light-emitting device manufactured by the manufacturing method of Embodiments 2 to 3 can be used as a light source.

[0177] In the manufacturing method of Embodiment 4, first, a light guide plate 310 is prepared. The light guide plate 310 is a member that diffuses the light emitted from a light-emitting device serving as a light source into a planar shape, and is a substantially plate-shaped member having a second main surface 312 as a light-emitting surface and a first main surface 311 located on the opposite side thereof. The first main surface 311 has a first recess 313. The first recess 313 is a portion where the light-emitting device 100 is disposed. For the second main surface 312 of the light guide plate 310, a second recess 315 can be disposed at a position corresponding to the recess 313 of the first main surface 311. Figure 7A The illustrated light guide plate 310 shows an example having two first recesses 313. The first recesses 313 can be arranged in a matrix on the first main surface 311, for example.

[0178] Such a light guide plate 310 can be prepared, for example, by injection molding, transfer molding, thermal transfer, etc. As the material of the light guide plate 310, for example, thermoplastic resins such as acrylic, polycarbonate, cyclic olefin, polyethylene terephthalate, or polyester, thermosetting resins such as epoxy or silicone, or glass can be used. In addition, the first recess 313 and the second recess 315 of the light guide plate 310 can be formed together during the molding of the light guide plate 310. Thereby, the positional deviation during molding can be reduced. In addition, a light-transmissive plate without the first recess 313 and the second recess 315 can be purchased or molded to prepare, and the process of forming the first recess 313 and the second recess 315 can be performed to prepare the light guide plate 310. Alternatively, the light guide plate 310 having the first recess 313 and the second recess 315 can be prepared by purchasing.

[0179] The second recess 315 can be a conical depression such as a conical shape or a square pyramid shape, or a frustum of a cone or a frustum of a square pyramid depression. The second recess 315 can reflect the light from the light-emitting device 100 to the side. A light-reflective member can be disposed in the second recess 315. As the light-reflective member, for example, a resin material containing a light diffusing agent such as titanium oxide, an insulating inorganic material such as an oxide or a nitride, or a thin film of a conductive material such as a metal can be used.

[0180] Next, as Figure 7A shown, uncured resin is injected into the first recesses 313 of the prepared light guide plate 310, and resin filling portions 331 filled with resin in the A-stage state are disposed.

[0181] Next, as Figure 7B shown, while maintaining the A-stage state of the injected resin, the light-emitting device 100 is placed on the resin filling portion 331 such that the light-emitting surface of each light-emitting element faces the resin filling portion 331. Here, in this specification, the light-emitting surface of the light-emitting element facing the resin filling portion 331 also includes the case where they face each other with a resin member interposed therebetween as Figure 7B shown.

[0182] Next, as Figure 7C shown, the resin filling portion 331 is heated at a first temperature to reduce the viscosity of the resin in the resin filling portion 331. Using the self-weight of the light-emitting device 100, the light-emitting device 100 sinks such that the electrode formation surface of the light-emitting device 100 is exposed. The resin filling portion 331 is heated at a second temperature higher than the first temperature and cured while the second surface 12 is exposed. Thereby, the resin member 330 is disposed in the first recess 313, and the resin member 330 covers the surface of the light-emitting device 100 except for the electrode formation surface.

[0183] According to the manufacturing method of the above-described Embodiment 4, a light-emitting assembly having a plurality of light-emitting devices 100 on the light guide plate 310 can be manufactured at low cost.

[0184] It should be noted that, in the manufacturing method of the light-emitting assembly of the above-described Embodiment 4, the example in which the first recess 313 is provided in the light guide plate 310 has been described, but a through hole penetrating from the upper surface to the lower surface of the light guide plate 310 may be used instead of the first recess 313. In this case, for example, after blocking the through hole on the lower surface side and disposing the resin filling portion, the manufacturing may be performed in the same manner as in the case of the first recess 313.

Claims

1. A method for manufacturing a light-emitting device, the light-emitting device having a light-emitting element, the light-emitting element including a semiconductor laminate and an electrode, the semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, the side surface of the semiconductor laminate being covered with a resin member, the electrode being disposed on the second surface of the semiconductor laminate, the manufacturing method including: a step of disposing a resin layer in a state of stage A on a support; a step of opposing the upper surface of the resin layer to the first surface and placing the light-emitting element on the upper surface of the resin layer; a step of heating the resin layer at a first temperature to reduce the viscosity of the resin layer, and causing the light-emitting element to sink by the self-weight of the light-emitting element so that the second surface of the semiconductor laminate is exposed; and a step of heating the resin layer at a second temperature higher than the first temperature and curing it in a state where the second surface is exposed, thereby forming the resin member.

2. The method for manufacturing a light-emitting device according to claim 1, wherein, after forming the resin layer and before placing the light-emitting element, there is a step of providing a recess at a position on the upper surface of the resin layer where the light-emitting element is to be placed, the recess including a bottom surface on which the light-emitting element is placed and side surfaces facing the side surface of the light-emitting element with a given interval therebetween, in the step of placing the light-emitting element, the light-emitting element is placed on the bottom surface.

3. The method for manufacturing a light-emitting device according to claim 1, wherein, before the step of disposing the resin layer, there is a step of preparing a resin layer in a state of stage A, the resin layer in a state of stage A having a recess at a position on the upper surface of the resin layer where the light-emitting element is to be placed, the recess including a bottom surface and side surfaces facing the side surface of the light-emitting element with a given interval therebetween, in the step of disposing the resin layer, the resin layer in a state of stage A having the recess is disposed on the support, in the step of placing the light-emitting element, the light-emitting element is placed on the bottom surface.

4. The method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein, the resin layer contains a phosphor.

5. The method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein, the thickness of the resin layer is greater than the thickness of the semiconductor laminate.

6. The method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein, the method for forming the resin layer includes a step of forming a cured first light-reflecting layer on the support and forming the resin layer thereon.

7. The method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein, after curing the resin layer to form the resin member, there is further a step of forming a second light-reflecting layer covering the side surface of the second surface and the electrode.

8. A method for manufacturing a light-emitting assembly, the method including: A process of preparing a light source, the light source including a light-emitting element, the light-emitting element including a semiconductor laminate and electrodes, the semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, the electrodes being disposed on the second surface of the semiconductor laminate, and at least the second surface being exposed to the outside; A process of preparing a light guide plate, the light guide plate including a first main surface and a second main surface opposite to the first main surface, and having a recess in the first main surface; A process of disposing a resin layer in the A-stage state in the recess; A process of opposing the upper surface of the resin layer to the first surface of the light-emitting element and placing the light source on the upper surface of the resin layer; A process of heating the resin layer at a first temperature to reduce the viscosity of the resin layer, and causing the light source to sink by the self-weight of the light source in such a manner that the second surface of the semiconductor laminate is exposed; and A process of heating the resin layer at a second temperature higher than the first temperature and curing the resin layer in a state where the second surface is exposed, thereby forming a resin member.

9. The method of manufacturing a light-emitting assembly according to claim 8, wherein the light source includes a light-emitting device manufactured by the method of manufacturing a light-emitting device according to any one of claims 1 to 7.

Images