Pallet carrier for horizontal precleaning module

Abstract

A horizontal pre-cleaning module includes: a chamber including a basin and a lid that jointly define a processing area; a rotatable vacuum stage disposed in the processing area, the rotatable vacuum stage including a substrate receiving surface; a pad adjustment station adjacent to the rotatable vacuum stage; a pad carrier positioning arm having a first end and a second end remote from the first end; a pad carrier assembly coupled to the first end of the pad carrier positioning arm; and an actuator coupled to the second end of the pad carrier positioning arm and configured to oscillate the pad carrier assembly between a first position above the rotatable vacuum stage and a second position above the pad adjustment station. The pad carrier assembly includes a universal joint base and a pad carrier coupled to the universal joint base, the universal joint base and the pad carrier being configured to support a polishing pad via a mechanical clamping mechanism and a suction clamping mechanism.

Description

background Technical Field

[0002] The embodiments described herein generally relate to equipment for manufacturing electronic devices, and more specifically, to a horizontal pre-cleaning (HPC) module that can be used to clean the surface of a substrate in a semiconductor device manufacturing process.

[0003] Description of related technologies

[0004] Chemical mechanical polishing (CMP) is commonly used in the fabrication of high-density integrated circuits to planarize or polish material layers deposited on a substrate. In the horizontal pre-clean (HPC) module used in CMP processes, a rotating polishing pad is pressed against the material layer on the surface of the substrate, and material is removed across the material layer through a combination of chemical and mechanical activity provided by the polishing slurry and the relative movement of the polishing pad and the substrate. Polishing pads made of polyvinyl alcohol (PVA) offer high shear forces for chemical and mechanical polishing due to their mechanical strength and abrasion resistance, compared to conventional polishing pads made of materials such as porous materials or filled or unfilled polymers. PVA is absorbent, soft, and elastic, and is inherently thicker and larger than conventional materials. Furthermore, larger polishing pads improve performance and reduce polishing time in chemical mechanical cleaning. However, polishing pads made of PVA may sag due to their inherently thicker and larger size when supported by a pad carrier.

[0005] Therefore, there is a need for systems and methods to support large and thick absorbent polishing pads while preventing them from sagging. Summary of the Invention

[0006] Embodiments of this disclosure provide a horizontal pre-cleaning module. The horizontal pre-cleaning module includes: a chamber including a basin and a lid that collectively define a processing area; a rotatable vacuum stage disposed in the processing area, the rotatable vacuum stage including a substrate receiving surface; a pad adjustment station adjacent to the rotatable vacuum stage; a pad carrier positioning arm having a first end and a second end remote from the first end; a pad carrier assembly coupled to the first end of the pad carrier positioning arm; and an actuator coupled to the second end of the pad carrier positioning arm and configured to oscillate the pad carrier assembly between a first position above the rotatable vacuum stage and a second position above the pad adjustment station. The pad carrier assembly includes a universal joint base and a pad carrier coupled to the universal joint base, the universal joint base and the pad carrier being configured to support a polishing pad via a mechanical clamping mechanism and a suction clamping mechanism.

[0007] Embodiments of this disclosure also provide a pad carrier assembly for use in a horizontal pre-cleaning module. A pad carrier assembly includes: a universal joint base; and a pad carrier coupled to the universal joint base. The universal joint base and the pad carrier are configured to support a polishing pad via a mechanical clamping mechanism and a suction clamping mechanism.

[0008] Embodiments of this disclosure also provide a method for supporting a polishing pad in a horizontal pre-cleaning module. The method includes: mechanically clamping the polishing pad onto its peripheral edge via a lip portion of a universal joint base and a tapered portion of a pad carrier, wherein the universal joint base and the pad carrier are coupled and disposed within the horizontal pre-cleaning module; and supporting the polishing pad and preventing it from sagging via a suction clamping mechanism. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above, reference can be made to the embodiments for a more specific description of the disclosure, some of which are shown in the accompanying drawings. However, it should be noted that the drawings merely illustrate typical embodiments of the disclosure and should not be construed as limiting its scope; other equivalent embodiments are permissible.

[0010] Figure 1A This is a schematic plan view of an exemplary chemical mechanical polishing (CMP) treatment system according to one or more embodiments, which uses the horizontal pre-cleaning (HPC) module described herein.

[0011] Figure 1B This is a top isometric view of an exemplary CMP processing system according to one or more embodiments, which may correspond to Figure 1A The diagram shown is shown in the image.

[0012] Figure 1C According to one or more embodiments Figure 1B A top view of the CMP processing system, which can correspond to Figure 1A The diagram shown is shown in the image.

[0013] Figure 2A This is a top isometric view of one side of an exemplary HPC module according to one or more embodiments.

[0014] Figure 2B yes Figure 2A Another top isometric view of one side of the HPC module.

[0015] Figure 2C yes Figure 2A The top isometric view of the other side of the HPC module.

[0016] Figure 3AThis is a plan view of an exemplary HPC module according to one or more embodiments.

[0017] Figure 3B This is a side cross-sectional view of an exemplary pad adjustment station according to one or more embodiments.

[0018] Figure 3C This is a side cross-sectional view of an exemplary pad carrier positioning arm according to one or more embodiments.

[0019] Figure 4A This is a side cross-sectional view of an exemplary universal joint base and pad carrier according to one or more embodiments.

[0020] Figure 4B and Figure 4C These are plan views and side cross-sectional views of a pad carrier according to one or more embodiments.

[0021] Figure 4D This is a side cross-sectional view of a pad carrier according to one or more embodiments.

[0022] Figure 4E and Figure 4F This is a top view of a polishing pad according to one or more embodiments.

[0023] To facilitate understanding, the same reference numerals have been used as much as possible to indicate common elements across the figures. It is contemplated that elements and features of the embodiments may be advantageously combined in other embodiments without further explanation. Detailed Implementation

[0024] The embodiments described herein generally relate to equipment for manufacturing electronic devices, and more specifically, to a horizontal pre-cleaning (HPC) module that can be used to clean the surface of a substrate in a semiconductor device manufacturing process.

[0025] Polishing pads made of polyvinyl alcohol (PVA) offer high shear strength for chemical and mechanical polishing due to their mechanical strength and abrasion resistance. However, PVA is absorbent, soft, and elastic, and is inherently thicker and larger than conventional materials, which can cause polishing pads made of PVA to sag when supported by a pad carrier.

[0026] In the embodiments described herein, the pad carrier supports a large and thick absorbent polishing pad while preventing the polishing pad from sagging during chemical mechanical cleaning via mechanical clamping and suction clamping mechanisms.

[0027] Figure 1A This is a schematic plan view of an exemplary chemical mechanical polishing (CMP) treatment system 100 according to one or more embodiments, which uses the horizontal pre-cleaning (HPC) module described herein. Figure 1BThis is a top isometric view of an exemplary CMP processing system 100 according to one or more embodiments, which may correspond to Figure 1A The diagram shown is shown in the image. Figure 1C According to one or more embodiments Figure 1B A top view of the CMP processing system 100, which can correspond to Figure 1A The diagram shown is illustrated below. Figure 1B and Figure 1C In this diagram, certain parts of the housing and some other internal and external components are omitted to more clearly show the HPC module within the CMP processing system 100. Here, the CMP processing system 100 includes a first part 105 and a second part 106 coupled to and integrated with the first part 105. The first part 105 is a substrate polishing section equipped with multiple polishing stations (not shown).

[0028] The second part 106 includes one or more CMP post-cleaning systems 110, multiple system loading stations 130, one or more substrate transporters (e.g., a first robot 124 and a second robot 150), one or more metering stations 140, one or more position-specific polishing (LSP) modules 142, one or more HPC modules 200, and one or more drying units 170. The HPC modules 200 are configured to process substrates 120 arranged in a substantially horizontal orientation (i.e., in the xy plane). In some embodiments, the second part 106 may optionally include one or more vertical cleaning modules 112 configured to process substrates 120 arranged in a substantially vertical orientation (i.e., in the zy plane).

[0029] Each LSP module 142 is typically configured to polish only a portion of the substrate surface using a polishing member (not shown) having a surface area smaller than that of the substrate 120 to be polished. The LSP module 142 is typically used after the substrate 120 has been polished with the polishing module to trim (e.g., remove additional material) a relatively small portion of the substrate.

[0030] Metering station 140 is used to measure the thickness of the material layer disposed on substrate 120 before and / or after polishing, to inspect substrate 120 after polishing to determine whether the material layer has been removed from its field surface, and / or to inspect the substrate surface for defects before and / or after polishing. In those embodiments, substrate 120 may be returned to the polishing pad for further polishing and / or directed to different substrate processing modules or stations (such as the polishing module within first section 105) or LSP module 142 based on the measurement or surface inspection results obtained using metering station 140. Figure 1A As shown, metering station 140 and LSP module 142 are located in the area of ​​the second part 106, which is above a portion of one of the CMP post-cleaning systems 110 (in the Z direction).

[0031] A first robot 124 is positioned to transport substrate 120 in and out of multiple system loading stations 130, for example, between the multiple system loading stations 130 and a second robot 150 and / or between a CMP post-cleaning system 110 and the multiple system loading stations 130. In some embodiments, the first robot 124 is positioned to transport substrate 120 between any of the system loading stations 130 and a processing system located nearby. For example, in some embodiments, the first robot 124 may be used to transport substrate 120 between one of the system loading stations 130 and a metering station 140.

[0032] The second robot 150 is used to transfer the substrate 120 between the first section 105 and the second section 106. For example, here, the second robot 150 is positioned to transfer the substrate 120 to be polished, received from the first robot 124, to the first section 105 for polishing. The second robot 150 is then used to transfer the polished substrate 120 from the first section 105 (e.g., from a transfer station (not shown) within the first section 105) to one of the HPC modules 200 and / or between different stations and modules located within the second section 106. Alternatively, the second robot 150 transfers the substrate 120 from a transfer station within the first section 105 to one of the LSP module 142 or the metering station 140. The second robot 150 may also transfer the substrate 120 from either the LSP module 142 or the metering station 140 to the first section 105 for further polishing.

[0033] Figure 1A The CMP treatment system 100 includes two CMP post-cleaning systems 110 located on either side of the second robot 150. Figure 1A In this configuration, at least some modules of one of the CMP post-cleaning systems 110 (e.g., one or more vertical cleaning modules 112) are located below the metering station 140 and the LSP module 142 (in the Z direction) and are therefore not shown. The metering station 140 and the LSP module 142 are not shown. Figure 1C As shown in the figure. In some other embodiments, the CMP processing system 100 has only one CMP post-cleaning system 110. Here, each of the CMP post-cleaning systems 110 includes an HPC module 200, one or more vertical cleaning modules 112 (e.g., brushes or spray boxes), a drying unit 170, and a substrate transporter 180 for transferring the substrate 120 between the two. Here, each HPC module 200 is located within the second portion 106 near the first portion 105.

[0034] Typically, HPC module 200 receives polished substrate 120 from second robot 150 through a first opening (not shown) formed in a side panel of HPC module 200 (e.g., through a door or slit valve provided in the side panel). Substrate 120 is received by HPC module 200 in a horizontal orientation to be positioned on a horizontally disposed substrate support surface within HPC module 200. Then, HPC module 200 performs a pre-cleaning process, such as a polishing process, on substrate 120 before transferring substrate 120 from HPC module using substrate transporter 180.

[0035] The substrate 120 passes through the second opening (here, opening 224). Figure 1B The substrate 120 is transferred from the HPC module 200. The second opening is typically a horizontal slot through the second side panel of the HPC module 200, which can be closed with a door (e.g., a slit valve). Therefore, when the substrate 120 is transferred from the HPC module 200, it remains horizontally oriented. After the substrate 120 is transferred from the HPC module 200, the substrate transporter 180 swings the substrate 120 to a vertical position for further processing in the vertical cleaning module 112 of the CMP post-cleaning system 110.

[0036] In this example, HPC module 200 has a first end 202 facing a first portion 105 of CMP processing system 100, a second end 204 away from the first end 202, a first side 206 facing a second robot 150, and a second side 208 away from the first side 206. The first side 206 and the second side 208 extend orthogonally between the first end 202 and the second end 204.

[0037] Multiple vertical cleaning modules 112 are located within the second section 106. One or more vertical cleaning modules 112 are any or a combination of contact and non-contact cleaning systems for removing polishing byproducts from the surface of a substrate, such as spray boxes and / or brush boxes.

[0038] The drying unit 170 is used to dry the substrate 120 after it has been processed by the vertical cleaning module 112 and before it is transferred by the first robot 124 to the system loading station 130. Here, the drying unit 170 is a horizontal drying unit, such that the drying unit 170 is configured to receive the substrate 120 through an opening (not shown) when the substrate 120 is set in a horizontal orientation.

[0039] In this document, substrate 120 is moved between HPC module 200 and vertical cleaning module 112, between the various vertical cleaning modules in vertical cleaning module 112, and between vertical cleaning module 112 and drying unit 170 using substrate transporter 180.

[0040] In the embodiments described herein, the operation of the CMP processing system 100, including the substrate transporter 180, is directed by a system controller 160. The system controller 160 includes a programmable central processing unit (CPU) 161, which operates in conjunction with memory 162 (e.g., non-volatile memory) and support circuitry 163. The support circuitry 163 is conventionally coupled to the CPU 161 and includes caches, clock circuitry, input / output subsystems, power supplies, and combinations thereof coupled to various components of the CMP processing system 100 to facilitate control of the CMP processing system. The CPU 161 is one of any form of general-purpose computer processor used in an industrial environment, such as a programmable logic controller (PLC), for controlling the various components and subprocessors of the processing system. The memory 162 coupled to the CPU 161 is non-transitory and is typically one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), floppy disk drives, hard disks, or any other form of digital storage device (local or remote).

[0041] Typically, memory 162 is in the form of a non-transitory computer-readable storage medium (e.g., non-volatile memory) containing instructions that, when executed by CPU 161, facilitate the operation of CMP processing system 100. The instructions in memory 162 are in the form of a program product, such as a program implementing the methods of this disclosure. The program code may conform to any of many different programming languages. In some examples, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program product defines the functionality of embodiments (including the methods described herein).

[0042] Exemplary nontransitory computer-readable storage media include, but are not limited to: (i) non-writable storage media on which information is persistently stored (e.g., read-only memory devices within a computer, such as CD-ROM discs readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory device, such as a solid-state drive (SSD)); and (ii) writable storage media on which changeable information is stored (e.g., floppy disks or any type of solid-state random access semiconductor memory within a disk drive or hard disk drive). Such computer-readable storage media are embodiments of this disclosure when computer-readable instructions instructing the functions of the methods described herein are implemented. In some embodiments, the methods or portions thereof described herein are performed by one or more application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other types of hardware implementations. In some other embodiments, the substrate handling and / or transport methods described herein are performed by a combination of software routines, ASICs, FPGAs, and / or other types of hardware implementations. One or more system controllers 160 may be used with one or any combination of the various modular polishing systems described herein and / or their individual polishing modules.

[0043] Figure 2A This is a top isometric view of the second side 208 of an exemplary HPC module 200 that can be used in the CMP processing system 100 described herein. Figure 2A The maintenance access panel has been omitted to show the internal components of the HPC module 200 more clearly. Figure 2B yes Figure 2A Another top isometric view of the second side 208 of the HPC module 200. Figure 2B In this version, the top panel of cover 216 is further omitted to show the internal components of HPC module 200 more clearly. Figure 2C yes Figure 2A Top isometric view of the first side 206 of the HPC module 200. Figure 2C In the image, cover 216 is omitted to show the internal components of HPC module 200 more clearly.

[0044] Typically, HPC module 200 includes a chamber 210, a basin 214, and a cover 216 formed by a plurality of side panels that commonly define a processing area 212.

[0045] A first side panel 218 is formed on a first side 206 of the HPC module 200 facing the second robot 150. The first side panel 218 includes a first substrate transporter inlet / outlet 220 for positioning a substrate 120 on a rotatable vacuum stage 230 using the second robot 150. A second side panel 222 is formed on a second end 204 of the HPC module 200 opposite to the first portion 105. The second side panel 222 includes a second substrate transporter inlet / outlet 221 for removing the substrate 120 from the rotatable vacuum stage 230 using a substrate transporter 180. A third side panel 226 is formed on a second side 208 of the HPC module 200. The third side panel 226 includes a maintenance access panel opening 228. The symmetry of the first substrate transporter inlet / outlet 220 and the maintenance access panel opening 228 formed on the opposite side panels of the HPC module 200 advantageously provides a horizontal polishing module that can be mounted on either side of the processing system 100, such as... Figure 1C As shown.

[0046] The HPC module 200 disposed in the processing area 212 further includes a rotatable vacuum stage 230 for vacuum clamping the substrate 120, an annular substrate lifting mechanism 270 disposed radially outside the rotatable vacuum stage 230, a pad adjustment station 280 disposed near the rotatable vacuum stage 230, and a pad carrier positioning arm 300 movable between a first position above the rotatable vacuum stage 230 and a second position above the pad adjustment station 280.

[0047] The rotatable vacuum stage 230, the annular substrate lifting mechanism 270, the pad adjustment station 280, and the pad carrier positioning arm 300 are each independently mounted to the basin 214. The HPC module 200 also includes a flushing manifold 290 mounted to the basin 214. A substrate center flushing bar 292 and one or more substrate spray bars 294 extend from one side of the flushing manifold 290. The substrate center flushing bar 292 directs flushing fluid (e.g., cleaning fluid or water) to the central region of the rotatable vacuum stage 230. The substrate spray bars 294 direct sprays to one or more other regions of the rotatable vacuum stage 230, such as the peripheral region or side portions of the rotatable vacuum stage 230. The flushing manifold 290 is positioned toward a corner of the basin 214, and the substrate center flushing bar 292 and the substrate spray bars 294 extend within a second side plate 222 along a second end 204 of the HPC module 200. In some embodiments, the flushing manifold 290 is adjacent to the second side 208. Figures 2A to 2B In some other embodiments, the flushing manifold 290 is adjacent to the first side 206. Figure 2C HPC module 200 further includes a brush flushing member 296 mounted to basin 214. The brush flushing member 296 is positioned toward a first end 202 of HPC module 200 and adjacent to pad conditioning station 280 to flush one or more components of pad conditioning station 280.

[0048] Figure 3A yes Figure 2C A plan view of the HPC module 200. An annular substrate lifting mechanism 270 is disposed radially outside the rotatable vacuum stage 230. The lifting mechanism 270 includes a plurality of substrate contact points 272 disposed near the circumferential edge of the rotatable vacuum stage 230. Each of the substrate contact points 272 is an upward-facing shoulder formed on a substrate clamp 274 surrounding the chuck 232. The lifting mechanism 270 is configured such that when the substrate 120 is lifted from the substrate receiving surface 266 of the rotatable vacuum stage 230, one of the plurality of substrate contact points 272 contacts the substrate 120 before the others. The annular substrate lifting mechanism 270 works in conjunction with the previously described vacuum pressure release and optional nitrogen purging to remove the substrate 120 from the chuck 232. Advantageously, compared to release alone and optional nitrogen purging, using the substrate lifting mechanism 270 allows the substrate 120 to be disengaged from the clamp more quickly.

[0049] Figure 3B It can be used Figure 3A A side cross-sectional view of an exemplary pad conditioning station 280 in an HPC module 200. The pad conditioning station 280 is disposed adjacent to a rotatable vacuum stage 230. The pad conditioning station 280 includes a conditioning brush 282 facing away from a basin 214. In some embodiments, the conditioning brush 282 comprises a fibrous material. In some embodiments, the fibers are formed of nylon or another similar material. The conditioning brush 282 is coupled to a rotatable brush shaft 284. The brush shaft 284 extends through the basin 214 and is fluidly coupled to a conditioning fluid source (not shown). The brush shaft 284 is configured to deliver conditioning fluid (e.g., deionized water) to a jet nozzle 286 disposed adjacent to the conditioning brush 282. During operation of the pad conditioning station 280, the conditioning brush 282 is rotated by the brush shaft 284. During rotation, conditioning fluid flows through the brush shaft 284 to the jet nozzle 286, thereby wetting the conditioning brush 282 and facilitating the conditioning process.

[0050] Figure 3C It can be used Figure 3AA side cross-sectional view of an exemplary pad carrier positioning arm 300 in the HPC module 200. The pad carrier positioning arm 300 is positioned close to the rotatable vacuum stage 230 and the pad adjustment station 280. The distal end 302 of the pad carrier positioning arm 300 includes a vertically movable pad carrier assembly 304 for supporting a polishing pad 306 at its lower end. The pad carrier assembly 304 includes a head motor 308 for rotating the polishing pad 306 about an axis c2 substantially aligned with the direction of gravity. The pad carrier assembly 304 includes a universal joint base 310 coupled to the head motor 308 via a spherical bearing 312, thereby allowing the polishing surface of the pad carrier assembly 304 to pivot relative to a plane orthogonal to the axis c2. The pad carrier assembly 304 further includes a pad carrier 314 coupled to the universal joint base 310. In some embodiments, the pad carrier 314 is sized to support a polishing pad 306 with a diameter of approximately 134 mm, which is larger than that of a conventional polishing pad used in a pre-cleaning module. In some embodiments, the pad carrier positioning arm 300 of this disclosure supports a larger polishing pad 306 compared to a conventional pre-cleaning module.

[0051] Figure 4A An exemplary universal joint base 310 and can be used Figure 3C A side cross-sectional view of the pad carrier 314 in the pad carrier assembly 304. In some embodiments, the universal joint base 310 includes a magnet 316, and the pad carrier 314 includes a magnet 318, such that the universal joint base 310 and the pad carrier 314 are magnetically coupled. The universal joint base 310 and the pad carrier 314 are aligned via locating pins 320.

[0052] In some embodiments, the polishing pad 306 is formed of polyvinyl alcohol (PVA) material. PVA material is hydrophilic and absorbs and retains water. When wetted, PVA material is elastic, flexible, and soft, possessing mechanical strength and abrasion resistance. Compared to conventional materials used as polishing pads (such as porous materials or filled or unfilled polymer materials), PVA material provides high shear force for chemical and mechanical cleaning. The polishing pad 306 formed of PVA material has a diameter of approximately 134 mm, which is larger than the diameter of a typical polishing pad formed of conventional materials with a diameter of approximately 67 mm. The larger polishing pad improves performance and reduces polishing time in chemical-mechanical cleaning. Furthermore, the polishing pad 306 formed of PVA material is thicker than a typical polishing pad formed of conventional materials. The pad carrier 314 is designed to support the large and thick absorbent polishing pad 306 while preventing sagging of the polishing pad 306 by mechanical clamping and suction clamping mechanisms.

[0053] The universal joint base 310 further includes a lip portion 322 on its peripheral edge. The pad carrier 314 includes a tapered portion 324 on its peripheral edge, the tapered portion gradually narrowing from the bottom surface of the pad carrier 314 toward the top surface facing the universal joint base 310, such that the tapered portion 324 is substantially parallel to the inner surface of the lip portion 322 of the universal joint base 310. The lip portion 322 of the universal joint base 310 and the tapered portion 324 of the pad carrier 314 together mechanically clamp the polishing pad 306 along its peripheral edge. The pad carrier 314 has a diameter of approximately 128 mm and a thickness of approximately 4.2 mm on its bottom surface. The diameter of the pad carrier 314 on its top surface is approximately 4.6 mm smaller than the diameter of the pad carrier 314.

[0054] Figure 4B and Figure 4C These are plan and side cross-sectional views of the pad carrier 314 according to the first embodiment. Figure 4C The diagram also shows a portion of the universal joint base 310 and the polishing pad 306. The pad carrier 314 includes a central slot 326 through which a rod 328 is pushed into the polishing pad 306. The slot 326 is circular with a diameter of approximately 15 mm and gradually narrows in the opposite direction from the surface facing the universal joint base 310 to the surface facing the polishing pad 306 (i.e., the diameter of the surface facing the universal joint base 310 is larger than the diameter at the base surface of the polishing pad 306). The rod 328 is cylindrical with a diameter slightly larger than the diameter of the slot 326, such that the rod 328 is compressed when inserted into the slot 326. The rod 328, the pad carrier 314, and the polishing pad 306 seal against each other and create an internal low-pressure region therein compared to the external atmospheric pressure. Atmospheric pressure presses on the lower pressure area surrounded by the rod 328, the pad carrier 314, and the polishing pad 306, generating a suction clamping force on the polishing pad 306. The universal joint base 310 and the pad carrier 314 can be formed of plastic or polymer, such as polyetheretherketone (PEEK). The polishing pad 306 is securely supported by the pad carrier 314 through a mechanical clamping mechanism consisting of the lip portion 322 of the universal joint base 310 and the peripheral edge of the pad carrier 314, and a suction clamping mechanism consisting of the rod 328 and the polishing pad 306. Figure 4B and Figure 4C The diagram shows a circular slot 326 and a cylindrical rod 328. However, the pad carrier 314 may have multiple slots 326, each receiving a rod 328 to generate a greater suction clamping force on the polishing pad 306. The rod 328 can be of any shape, and the slot has a shape that matches the shape of the rod 328, such that the rod 328 and the pad carrier 314 generate low internal pressure therein.

[0055] Figure 4DThis is a side cross-sectional view of the pad carrier 314 according to the second embodiment. Figure 4D The image also shows a portion of the universal joint base 310 and the polishing pad 306. The pad carrier 314 includes a central slot 326 through which the rod 328 is pushed into the polishing pad 306, as shown. Figure 4C As shown in the first embodiment. In the second embodiment, a backing 330 that contacts the polishing pad 306 is disposed on the surface of the pad carrier 314. The backing 330 may be formed of plastic and increases the rigidity of the polishing pad 306, thereby further preventing the polishing pad 306 from sagging.

[0056] Figure 4E and Figure 4F This is a top view of a polishing pad 306 according to a third embodiment. In the third embodiment, the polishing pad 306 has raised contact features formed on the surface of the polishing pad 306 facing the pad carrier 314, and the pad carrier 314 has a plurality of slots 326, one of the contact features engaging in each of the slots. The raised contact features of the polishing pad 306 and the pad carrier 314 seal against each other and create an internal lower pressure region therein compared to the external atmospheric pressure, thereby generating a suction clamping force on the polishing pad 306. Figure 4E In this configuration, the raised contact feature consists of a plurality of posts 332, and each of the posts 332 engages in a slot 326 in the pad carrier 314. Figure 4F In the process, the contact features include a post 334 engaged in a circular slot 326 that matches the shape of the post 334 and radial spokes 336, each spoke being engaged in a rectangular slot 326 that matches the shape of the radial spokes 336.

[0057] In the embodiments described herein, a pad carrier supports a large, thick, absorbent polishing pad (such as a polishing pad made of polyvinyl alcohol (PVA) material) while preventing sagging during chemical-mechanical cleaning via mechanical clamping and suction clamping mechanisms. Polishing pads made of PVA material provide high shear forces for chemical and mechanical polishing due to their mechanical strength and abrasion resistance. The large size of the polishing pad provides improved cleaning performance.

[0058] Although the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be conceived without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the scope of the appended claims.

[0059] List of reference numerals

[0060] 100 Chemical Mechanical Polishing (CMP) Treatment System

[0061] 105 Part 1

[0062] 106 Part Two

[0063] 110 CMP Post-Cleaning System

[0064] 112 Vertical Cleaning Module

[0065] 120 substrate

[0066] 124 First Robot

[0067] 130 System Loading Station

[0068] 140 metering stations

[0069] 142 LSP Module

[0070] 150 Second Robot

[0071] 160 System Controller

[0072] 161 Programmable Central Processing Unit (CPU)

[0073] 162 memory

[0074] 163 Support Circuit

[0075] 170 Drying Unit

[0076] 180 substrate transporter

[0077] 200 HPC modules

[0078] 202 First End

[0079] 204 Second End

[0080] 206 First side

[0081] 208 Second side

[0082] 210 chambers

[0083] 212 Processing Area

[0084] 214 pots

[0085] 216 covers

[0086] 218 First side panel

[0087] 220 First substrate transporter inlet and outlet

[0088] 221 Second substrate transporter inlet and outlet

[0089] 222 Second side panel

[0090] 224 Opening

[0091] 226 Third side panel

[0092] 228 Maintenance access panel opening

[0093] 230 Rotatable Vacuum Stage

[0094] 232 Suction Plate

[0095] 266 Substrate receiving surface

[0096] 270 institutions

[0097] 272 Substrate contact points

[0098] 274 Baseboard clamp

[0099] 280 Pad Adjustment Station

[0100] 282 Adjustable brush

[0101] 284 brush spindles

[0102] 286 Injection Nozzle

[0103] 290 Flushing manifold

[0104] 292 Substrate Center Rinse Bar

[0105] 294 Substrate Spraying Rod

[0106] 296 brush flushing parts

[0107] 300 Pad Carrier Positioning Arm

[0108] 302 Remote

[0109] 304 Pad Carrier Assembly

[0110] 306 Polishing Pad

[0111] 308 head motor

[0112] 310 Universal Joint Base

[0113] 312 ball bearing

[0114] 314 Pad Carrier

[0115] 316 radial spokes

[0116] 318 Magnet

[0117] 320 sales

[0118] 322 Lip border area

[0119] 324 Conical section

[0120] 326 Rectangular slot

[0121] 328 strokes

[0122] 330 backing

[0123] 332 columns

[0124] 334 columns

Claims

1. A horizontal pre-cleaning module, comprising: A chamber, the chamber comprising a basin and a lid that together define a processing area; A rotatable vacuum stage is disposed in the processing area, and the rotatable vacuum stage includes a substrate receiving surface; A pad adjustment station is located near the rotatable vacuum stage; A pad carrier positioning arm, the pad carrier positioning arm having a first end and a second end away from the first end; A pad carrier assembly, the pad carrier assembly being coupled to the first end of the pad carrier positioning arm; and An actuator, coupled to the second end of the pad carrier positioning arm and configured to oscillate the pad carrier assembly between a first position above the rotatable vacuum stage and a second position above the pad adjustment station, wherein... The pad carrier assembly includes a universal joint base and a pad carrier coupled to the universal joint base. The universal joint base and the pad carrier are configured to support the polishing pad via a mechanical clamping mechanism and a suction clamping mechanism. The universal joint base includes a lip portion on the peripheral edge of the universal joint base. The pad carrier includes a tapered portion on the peripheral edge of the pad carrier, and The lip portion and the pad carrier are configured to provide the mechanical clamping mechanism by mechanically clamping the polishing pad along its peripheral edge.

2. The horizontal pre-cleaning module as described in claim 1, wherein... The universal joint base includes a magnet. The pad carrier includes a magnet. The universal joint base and the pad carrier are magnetically coupled.

3. The horizontal pre-cleaning module as described in claim 1, wherein... The pad carrier has a slot for receiving a rod, which is configured to be pushed into a polishing pad supported by the pad carrier to provide the suction clamping mechanism to the polishing pad.

4. The horizontal pre-cleaning module as described in claim 1, wherein... The pad carrier includes a plastic backing that contacts the polishing pad supported by the pad carrier to provide hardness to the polishing pad.

5. The horizontal pre-cleaning module as described in claim 1, wherein... The pad carrier has a plurality of slots that receive protrusions formed on the surface of the polishing pad supported by the pad carrier to provide the suction clamping mechanism to the polishing pad.

6. A pad carrier assembly for use in a horizontal pre-cleaning module, comprising: Universal joint base; and Pad carrier, the pad carrier being coupled to the universal joint base, wherein The universal joint base and the pad carrier are configured to support the polishing pad via a mechanical clamping mechanism and a suction clamping mechanism. The universal joint base includes a lip portion on the peripheral edge of the universal joint base. The pad carrier includes a tapered portion on the peripheral edge of the pad carrier, and The lip portion and the pad carrier are configured to provide a mechanical clamping mechanism by mechanically clamping the polishing pad along its peripheral edge.

7. The pad carrier assembly as claimed in claim 6, wherein: The universal joint base includes a magnet. The pad carrier includes a magnet. The universal joint base and the pad carrier are magnetically coupled.

8. The pad carrier assembly as claimed in claim 6, wherein: The pad carrier has a slot for receiving a rod, which is configured to be pushed into a polishing pad supported by the pad carrier to provide the suction clamping mechanism to the polishing pad.

9. The pad carrier assembly as claimed in claim 6, wherein: The pad carrier includes a plastic backing that contacts the polishing pad supported by the pad carrier to provide hardness to the polishing pad.

10. The pad carrier assembly of claim 6, wherein: The pad carrier has a plurality of slots that receive protrusions formed on the surface of the polishing pad supported by the pad carrier to provide the suction clamping mechanism to the polishing pad.

11. A method for supporting a polishing pad in a horizontal pre-cleaning module, comprising: The polishing pad is mechanically clamped along its peripheral edge by the lip portion of the universal joint base and the tapered portion of the pad carrier, wherein: The lip portion of the universal joint base is disposed on the peripheral edge of the universal joint base, and the tapered portion of the pad carrier is disposed on the peripheral edge of the pad carrier. The universal joint base and the pad carrier are coupled and disposed in the horizontal pre-cleaning module; and The polishing pad is supported by a suction clamping mechanism and the polishing pad is prevented from sagging.

12. The method of claim 11, wherein the polishing pad comprises polyvinyl alcohol (PVA) material.

13. The method of claim 11, wherein the suction clamping mechanism includes a rod that is pushed into the polishing pad through a slot in the pad carrier.

14. The method of claim 11, further comprising: A plastic backing is placed on the surface of the pad carrier, and the plastic backing is in contact with the polishing pad.

15. The method of claim 11, wherein the suction clamping mechanism includes a plurality of slots and a protrusion formed on the surface of the polishing pad, each of the plurality of slots receiving one of the protrusions.

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