Controlling voltage resistance by metal oxide device

Abstract

Embodiments of the present invention relate to controlling a voltage resistance device by a metal oxide device. Embodiments of the present invention provide a computer system, voltage resistance control device and method, comprising: at least two electrodes on a proximal end point; a first layer disposed on the at least two electrodes, wherein the first layer is made of a metal oxide; a second layer disposed on the first layer, wherein the second layer is made of a conductive metal oxide; a shaped contact disposed on the second layer, wherein the combination of the shaped contact disposed on the second layer, the second layer disposed on the first layer operably connects the at least two electrodes; and a computer system operably connected to the shaped contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer, respectively, and display an overall resistance increase using a user interface.

Description

BACKGROUND

[0001] The present invention relates generally to the field of voltage resistance and, in particular, to controlling voltage resistance through a metal oxide device.

[0002] A memristor is a nonlinear two-terminal electrical component that involves conductivity and voltage. Voltage is the potential difference between two points, which in an electrostatic field is defined as the work required per unit of charge to move a test charge between two points. The resistance of an object is a measure of its opposition to the flow of electric current. The resistance of an object depends largely on its material of manufacture. Objects made of electrical insulators, such as rubber, tend to have very high resistance and low conductivity, while objects made of electrical conductors, such as metals, tend to have very low resistance and high conductivity.

[0003] A metal oxide is an amorphous or crystalline solid that contains metal cations and oxide anions. Metal oxides generally react with water to form bases or with acids to form salts. An oxide is a compound that contains at least one oxygen atom and one other element in its chemical formula. The oxide is the divalent anion of oxygen. Certain elements can form multiple oxides, which differ in the amount of the element combined with oxygen. Examples are carbon, iron, nitrogen, silicon, titanium, and aluminum. In such cases, the oxides are distinguished by specifying the number of atoms involved or by specifying the oxidation number of the element. SUMMARY

[0004] Embodiments of the present invention provide a computer system, voltage resistance control device and method, comprising: at least two electrodes on a proximal end point; a first layer disposed on the at least two electrodes, wherein the first layer is made of a metal oxide; a second layer disposed on the first layer, wherein the second layer is made of a conductive metal oxide; a shaped contact disposed on the second layer, wherein the shaped contact is disposed on the combination of the second layer disposed on the first layer operatively connected to the at least two electrodes; and a computer system operatively connected to the shaped contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer, respectively, and display an overall resistance increase using a user interface. BRIEF DESCRIPTION OF DRAWINGS

[0005] Figure 1 is a block diagram of a voltage resistance control system according to at least one embodiment of the present invention;

[0006] Figure 2A is an exploded view of a voltage resistance control device according to at least one embodiment of the present invention;

[0007] Figure 2B is an assembled view of a voltage resistance control device according to at least one embodiment of the present invention;

[0008] Figure 3is a flowchart illustrating operational steps for controlling voltage resistance in a metal oxide device according to at least one embodiment of the present application; and

[0009] Figure 4 is a block diagram of internal and external components of a computer system according to at least one embodiment of the present application. Figure 1 DETAILED DESCRIPTION

[0010] Embodiments of the present application recognize a need to provide more efficient systems and methods for controlling voltage resistance using memristive devices to compute a plurality of synaptic connections within a neural network. Generally, the range of resistance within a filamentary type of memristive device is 100 ohms to 10 kilo-ohms, which limits the voltage resistance of the memristive device and potentially limits the ratio of the highest and lowest resistance states of the memristor device. In some cases, the formation of a conducting filament of oxygen vacancies in a metal oxide is obtained by applying a current or voltage and by applying a negative or positive charge to switch between a high resistance state and a low resistance state. Embodiments of the present application provide efficient systems and methods for controlling voltage resistance by increasing the resistance of a plurality of filament layers associated with a metal oxide device. Embodiments of the present application provide efficient systems and methods for controlling voltage resistance by increasing the resistance within a memristive device via a series connection of filamentary portions, which reduces inefficient power consumption. Embodiments of the present application provide cost-effective systems and methods for controlling voltage resistance by using a predetermined voltage while tuning a plurality of filaments, creating a minimum overhead at the system level, and enhanced control of the resistance associated with a memristor device based on the predetermined voltage applied through the plurality of filaments. Embodiments of the present application provide efficient and cost-effective systems and methods for controlling voltage resistance by applying at least two filamentary conducting channels in a first metal oxide; individual tuning of the conductance by at least the filaments; and forcing a current to pass laterally through a second metal oxide layer and through the two or more filaments in the first metal oxide. In this manner, as discussed in greater detail in the present specification, embodiments of the present application can be used to increase the resistance within a plurality of filament layers associated with a metal oxide device by controlling the voltage applied to each respective filament layer within the plurality of filament layers.

[0011] Figure 1 is a functional block diagram of a voltage resistance control system 100 according to embodiments of the present application. The voltage resistance control system 100 includes a computer system 102 and a resistance voltage control device 106. In some embodiments, the computer system 102 can be an integrated, on-board component of the voltage resistance control device 106. Generally, the computer system 102 represents any electronic device or combination of electronic devices capable of executing machine-readable program instructions, as described in greater detail with respect to Figure 4 ​​

[0012] The computer system 102 includes a voltage resistance control program 104. As discussed with respect to Figure 3 As discussed in greater detail, the voltage resistance control program 104 (hereinafter referred to as “program 104”) increases resistance and enhances resistance control of the voltage resistance control device 106 by generating a current through the data cable 108 that traverses a predetermined voltage through a plurality of filament layers associated with the voltage resistance control device 106. In another embodiment, the voltage resistance control device 106 uses the program 104 to increase resistance and enhance resistance control of an external device, which is locally stored on the voltage resistance control device 106. In this embodiment, the program 104 applies a predetermined voltage to the voltage resistance control device 106. As used herein, the term “voltage resistance” refers to a measure of resistance to a flow of current (i.e., voltage) applied to at least two filament layers associated with the voltage resistance control device 106. In this embodiment, controlling the individual resistance of each respective filament portion within the control filament layer enables enhanced control of the voltage resistance by individually tuning each respective filament portion based on individually applying a predetermined voltage across a plurality of filament portions within the voltage resistance control device 106 (e.g., between the first metal oxide layer and the second metal oxide layer). Data transmitted by the voltage resistance control device 106 can include transmission instructions to enable direct exchange of oxygen between the second metal oxide layer and at least one filament portion associated with the first metal oxide layer, which modifies the stoichiometric arrangement associated with the element comprising the metal oxide layer.

[0013] Figure 2A is a cross-sectional view of the voltage resistance control device 106. The voltage resistance control device 106 includes a first electrode 202 and a second electrode 204 as proximal end points. In this embodiment, a first layer 210 made of a metal oxide is disposed on the first electrode 202 and the second electrode 204. For example, silicon dioxide SiO2 and titanium dioxide TiO2 are examples of metal oxides. In this embodiment, a second layer 208 made of a conductive metal oxide is disposed on the first layer 210. In another embodiment, the second layer 208 is made of a metal oxide and an electrical insulator. An electrical insulator is defined as a material that does not allow free flow of electrons, which means that a low amount of current can flow through the material. For example, electrical insulators are glass, paper, and Teflon. In this embodiment, a shaped contact 206 made of a conductive metal is disposed on the second layer 208. In this embodiment, the layered shaped contact is defined as a combination of the shaped contact 206 disposed on the second layer 208, the second layer 208 disposed on the first layer 210. In this embodiment, the layered shaped contact operably connects the first electrode 202 and the second electrode 204.

[0014] In this embodiment, the first layer 210 comprises a plurality of filament portions, wherein the voltage resistance of each of the plurality of filament portions is controlled by applying a predetermined voltage within the first layer 210. In this embodiment, the plurality of filament portions within the second layer changes the resistance of the second layer 208 via the application of the predetermined voltage. In this implementation, the program 104 applies the predetermined voltage to the plurality of filament portions of the first layer 210. In another embodiment, the voltage resistance control program 104 applies the predetermined voltage to both the second layer 208 and the first layer 210. In this embodiment, the program 104 can apply different voltages to the first layer 210. In another embodiment, the program 104 applies the predetermined voltage laterally through the plurality of filament portions within the first layer 210. In this embodiment, the second layer 208 is made of a metal oxide that exhibits resistance dependence based on stoichiometry modification via the application of the predetermined voltage to the plurality of filament portions within the first layer 210. In this embodiment, the first layer 210 is a dielectric, which is defined as having the property of transmitting electricity without electric conduction. In this embodiment, the preferred material of the first layer 210 is hafnium dioxide Hf02. In this embodiment, the second layer 208 is made of a different metal oxide than the first layer 210 and has high electrical conductivity. In this embodiment, the preferred material of the second layer 208 is tungsten oxide WO3. 3-x In another embodiment, the preferred material of the metal oxide used within the second layer 208 is silicon dioxide Si02and titanium dioxide Ti02.

[0015] In certain embodiments, the program 104 applies the same predetermined voltage at the first electrode 202 and the second electrode 204. In other embodiments, the program 104 applies a different predetermined voltage to the shaped contact 206 than the predetermined voltage applied to the first electrode 202 and the second electrode 204. In certain embodiments, the application of the different predetermined voltages occurs sequentially, wherein a first predetermined voltage is applied to the first electrode 202 and the second electrode 204, and subsequently a second predetermined voltage is applied to the shaped contact 206. In another embodiment, the application of the first predetermined voltage and the second predetermined voltage is simultaneous. In this embodiment, the program 104 individually controls the resistance state of the plurality of filament layers by applying different predetermined voltages to the first electrode 202 and the second electrode 204 and the shaped contact 206. In this embodiment, the program 104 increases the overall resistance of the voltage resistance control device 106 by selectively tailoring the resistance within at least one of the plurality of portions within the first layer 210 and the second layer 208 using lateral application of the predetermined voltage, which dynamically increases the range of resistance associated with the voltage resistance control device 106.

[0016] Figure 2Bis an expanded view of the voltage resistance control device 106. The voltage resistance control device 106 is configured using a crossbar array 212. In this embodiment, the program 104 applies a first predetermined voltage to at least one set of strips within the plurality of strips associated with the crossbar array 212. In this embodiment, the program 104 applies a second predetermined voltage to at least one other set of strips within the plurality of strips associated with the crossbar array 212. In this embodiment, the electrical wires 214 interconnect the plurality of strips associated with the crossbar array 212. In this embodiment, the electrical wires are operably disposed throughout the first layer 210 and the second layer 208 such that the electrical wires connect the two layers, with each respective filament layer being associated with a respective metal oxide. In this embodiment, the voltage resistance control device 106 having the crossbar array 212 configuration computes a plurality of synapse connections in a neural network for simulating a synapse accelerator by individually tuning a plurality of filament layers by applying predetermined voltages that interact with a plurality of metal oxide layers, which results in an increased resistance range of 100 ohms (“100 Ω”) to 10,000 (“10,000 Ω”) ohms (i.e., 10 kΩ).

[0017] Figure 3 is a flowchart 300 illustrating operational steps for dynamically controlling voltage resistance in a voltage resistance control device, in accordance with at least one embodiment.

[0018] In step 302, the program 104 analyzes the voltage resistance control device 106. In this embodiment, the voltage resistance control device 106 includes a first electrode 202 and a second electrode 204 as proximal end points. In this embodiment, a first layer 210 made of a metal oxide is disposed on the first electrode 202 and the second electrode 204. In this embodiment, a second layer 208 made of a conductive metal oxide is disposed on the first layer 210. In this embodiment, a shaped contact 206 made of a conductive metal is disposed on the second layer 208. In this embodiment, the following combination is defined as a layered shaped contact: the shaped contact 206 is disposed on the second layer 208, the second layer 208 is disposed on the first layer 210. In this embodiment, the layered shaped contact operably connects the first electrode 202 and the second electrode 204.

[0019] In this embodiment, the shaped contact 206 made of a conductive metal is disposed on the second layer 208 made of a first metal oxide by placing the shaped contact 206 directly on the second layer 208 by anodizing the second layer 208 to expose the shaped contact 206 to oxygen particles. In response to the shaped contact 206 being disposed on the second layer 208 disposed on the first layer 210, the first layer 210 is made of a metal oxide different from the metal oxide associated with the second layer 208. For example, the second layer 208 is disposed on the first layer 210 within the voltage resistance control device 106 by an anodizing process. In this example, the second layer 208 made of tungsten oxide WO3 is disposed on the first layer 210 made of hafnium dioxide Hf02 within the voltage resistance control device 106 by a different anodizing process. 3-x In this example, the second layer 208 made of tungsten oxide WO3 is disposed on the first layer 210 made of hafnium dioxide Hf02 within the voltage resistance control device 106 by a different anodizing process.

[0020] In step 304, the program 104 identifies at least two filament-like conductive pathways within the first layer 210 of the voltage resistance control device 106. In this embodiment, the program 104 identifies the at least two filament-like conductive pathways by transmitting charged ions through a plurality of porous openings within the first layer 210 and using a plurality of sensor devices, artificial intelligence algorithms, and machine learning algorithms to determine the flow of charged ions through the at least two filament-like conductive pathways over two fixed time periods. For example, the program 104 identifies two filament-like conductive pathways using a first sensor device and determines that the flow of charged ions over a first fixed time period produces a voltage of -1.2 V. In this example, in response to applying a predetermined voltage to the first layer 210, the program 104 determines that the flow of charged ions over a second fixed time period produces a voltage of.8 V. In this embodiment, the program 104 identifies the at least two filament-like conductive pathways by determining the flow of charged ions due to the charged ions requiring a conductive medium to transmit the charged ions through the first layer 210. In another embodiment, in response to transmitting the charged ions through a non-conductive filament-like pathway, the program 104 reduces the movement of the charged ions by dissolution.

[0021] In step 306, the program 104 implements individually adjusting the electrical conductance associated with the first layer 210 via the identified at least two filament-like conductive pathways. In this embodiment, the program 104 sends instructions to the voltage resistance control device 106 to apply a first predetermined voltage across the second layer 208 and the first layer 210. In another embodiment, the program 104 transmits instructions to the voltage resistance control device 106 to individually tune a plurality of portions associated with the first layer 210 by selectively tailoring the electrical resistance of the plurality of individual filament portions using the application of a predetermined voltage. In this embodiment, the program 104 simultaneously tunes a plurality of filament portions of the first layer 210 by uniformly laterally applying a predetermined voltage through the plurality of filament portions within the first layer 210. In another embodiment, the program 104 sequentially tunes a plurality of filament portions of the first layer 210 in a delay in the application of a predetermined voltage to a plurality of portions within the plurality of filament portions. In this embodiment, simultaneously tuning a plurality of filament portions of the first layer 210 by modifying the stoichiometry of the second layer 208 and the shaped contact 206 increases the overall electrical resistance and dynamically increases the resistance range of the voltage resistance control device 106.

[0022] In step 308, the program 104 laterally applies a predetermined voltage through the first layer 210 via the identified at least two filament-like conductive pathways. In this embodiment, the program 104 applies the predetermined voltage to each of the plurality of filament portions located within the first layer 210. In this embodiment, the program 104 determines the voltage using the stoichiometry arrangement of the dielectric metal oxide associated with the first layer 210 and the conductive metal oxide associated with the second layer 208, respectively. In this embodiment, in response to laterally applying the predetermined voltage through the first layer 210, the predetermined voltage passes through the second layer 208 and the shaped contact 206 via the identified at least two filament-like conductive pathways, which modifies the voltage resistance of the second layer 208 and the shaped contact 206.

[0023] In step 310, the program 104 transmits the increase in overall electrical resistance as data for display. In this embodiment, the program 104 displays the increase in overall electrical resistance associated with the voltage resistance control device 106 on the computing system 102 via a user interface. In this embodiment, the program 104 displays the increase in overall electrical resistance as a line graph, where the x-axis is defined as a charge in the range of -1.2V to.8V and the y-axis is defined as the absolute value of the current and area and has a range of 10 -7 W / m 2 to 10 -3 W / m 2 . In this embodiment, W / m 2 is defined as Watts per square meter. For example, prior to the application of the predetermined voltage, the voltage resistance control device 106 had a peak of.6V and 10 -4 W / m2 In this example, in response to the application of the predetermined voltage, the peak value of the voltage resistance device 106 is between.8V and 10 -3 W / m 2 Thus, the application of the predetermined voltage within the voltage resistance control device 106 increases the overall resistance by.2V.

[0024] Figure 4 is a block diagram of the internal and external components of a computer system 400 in accordance with an embodiment of the present application, which represents Figure 1 It should be appreciated that Figure 4 only a description of one implementation and does not imply any limitation with regard to various embodiments that can be implemented in a Figure 4 The components shown in the computer system 400 represent any electronic device capable of executing machine readable program instructions. Examples of Figure 4 The computer system, environment, and / or configuration represented by the components shown in the computer system 400 can include, but is not limited to, a personal computer system, a server computer system, a thin client, a thick client, a laptop computer system, a tablet computer system, a cellular telephone (e.g., a smart phone), a

[0025] The computer system 400 includes a communication structure 402 that provides communication between one or more processors 404, memory 406, persistent storage 408, a communication unit 412, and one or more input / output (I / O) interfaces 414. The communication structure 402 can be implemented with any architecture designed for passing data and / or control information between processors (such as microprocessors, communications and network processors, etc.), system memory, peripheral devices, and any other hardware components within a system. For example, the communication structure 402 can be implemented with one or more buses.

[0026] The memory 406 and the persistent storage 408 are computer readable storage media. In this embodiment, the memory 406 includes random access memory (RAM) 416 and cache memory 418. Generally, the memory 406 can include any suitable volatile or non-volatile computer readable storage media. Software is stored in the persistent storage 408 for execution and / or access by one or more of the respective processors 404 via the one or more memories of the memory 406.

[0027] The persistent storage 408 can include, for example, a number of magnetic hard disk drives. As an alternative or in addition to a magnetic hard disk drive, the persistent storage 408 can include one or more solid state drives, semiconductor memory devices, read-only memory (ROM), erasable programmable read-only memory (EPROM), flash memory, or any other computer-readable storage media that is capable of storing program instructions or digital information.

[0028] The media used by the persistent storage 408 also can be removable. For example, a removable hard drive can be used for the persistent storage 408. Other examples include optical and magnetic disks, thumb drives, and smart cards that are inserted into a drive for transfer onto another computer-readable storage medium, also a part of the persistent storage 408.

[0029] The communication unit 412 provides for communications with other computer systems or devices. In this exemplary embodiment, the communication unit 412 includes a network adapter or interface, such as an Ethernet adapter, a wireless Wi-Fi interface card, or a 3G or 4G wireless interface card or other wired or wireless communication links. The network can comprise, for example, an intranet, the Internet, or other types of networks. Software and data transferred via the communication unit 412 (e.g., downloaded from the Internet) can be stored in the permanent storage 408, which can comprise, for example, a hard disk or flash memory. The software and data transferred via the communication unit 412 can be loaded into the memory 404 for execution by the computer system 400.

[0030] The one or more I / O interfaces 414 allow for input and output of data with other devices that can be connected to the computer system 400. For example, the I / O interface 414 can provide a connection to one or more external devices 420, such as a keyboard, a computer mouse, a touch screen, a virtual keyboard, a touchpad, a pointing device, or other human-computer interface devices. The external devices 420 can also include portable computer-readable storage media, such as thumb drives, portable optical or magnetic disks, and memory cards. The I / O interface 414 also connects to a display 422.

[0031] The display 422 provides a mechanism for displaying data to a user, and can be, for example, a computer monitor. The display 422 can also be an incorporated display, and can be used as a touch screen, such as the built-in display of a tablet computer.

[0032] The present application can be a system, a method, and / or a computer program product. The computer program product can include a computer readable storage medium (or media) having computer readable program instructions thereon for causing a processor to carry out aspects of the present application.

[0033] The computer readable storage medium can be a tangible device that can retain and store instructions for use by an instruction execution device. The computer readable storage medium can be, for example, but is not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing. A non-exhaustive list of more specific examples of the computer readable storage medium includes the following: a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a static random access memory (SRAM), a portable compact disc read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanically encoded device such as punch cards or raised structures in grooves of a groove having instructions recorded thereon, and any suitable combination of the foregoing. A computer readable storage medium, as used herein, is not to be construed as being transitory signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through a waveguide or other transmission media (e.g., light pulses passing through a fiber-optic cable), or electrical signals transmitted through a wire.

[0034] Computer readable program instructions described herein can be downloaded to respective computing / processing devices from a computer readable storage medium or to an external computer or external storage device via a network, for example, the Internet, a local area network, a wide area network and / or a wireless network. The network can comprise copper transmission cables, optical transmission fibers, wireless transmission, routers, firewalls, switches, gateway computers and / or edge servers. A network adapter card or network interface in each computing / processing device receives computer readable program instructions from the network and forwards the computer readable program instructions for storage in a computer readable storage medium within the respective computing / processing device.

[0035] Computer readable program instructions for carrying out operations of the present application can be assembly instructions, instruction-set-architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state-setting data, or source code or object code written in any combination of one or more programming languages, including an object oriented programming language such as Smalltalk, C++ or the like, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The computer readable program instructions can execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computer (for example, through the Internet using an Internet Service Provider). In some embodiments, electronic circuitry including, for example, programmable logic circuitry, field-programmable gate array (FPGA), or programmable logic array (PLA) can execute the computer readable program instructions by utilizing state information of the computer readable program instructions to personalize the electronic circuitry in order to perform aspects of the present application.

[0036] The computer readable program instructions can also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable apparatus or other device to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions / acts specified in the flowchart and / or block diagram block or blocks.

[0037] The computer readable program instructions can also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable apparatus or other device to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions / acts specified in the flowchart and / or block diagram block or blocks.

[0038] The computer readable program instructions can also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable apparatus or other device to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions / acts specified in the flowchart and / or block diagram block or blocks.

[0039] The flow and block diagrams in the drawings show possible architectural, functional, and operational scenarios by various embodiments of the present application. In this regard, each block can represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative implementations, the functions noted in the blocks can occur out of the order noted in the figures. For example, two blocks shown in succession can in fact be executed substantially concurrently or the blocks can sometimes be executed in the reverse order, depending on the functionality involved. It will also be noted that each block of the block diagrams and / or flowchart illustrations, and combinations of blocks in the block diagrams and / or flowchart illustrations, can be implemented by special purpose hardware-based systems that perform the specified functions or actions, or combinations of special purpose hardware and computer instructions.

[0040] The description of the different embodiments of the application has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the application. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application, or technical improvement over technology found in the marketplace, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A voltage resistance control device, comprising: at least two electrodes on a proximal end point; a first layer disposed on the at least two electrodes, wherein the first layer is made of a metal oxide; a second layer disposed on the first layer, wherein the second layer is made of a conductive metal oxide or made of an electrically insulating metal oxide; a shaped contact disposed on the second layer, wherein the combination of the shaped contact disposed on the second layer, the second layer disposed on the first layer operatively connects the at least two electrodes; and a computer system operatively connected to the shaped contact, wherein the computer system is configured to apply a predetermined voltage to a plurality of filament portions of the first layer and a plurality of filament portions of the second layer, respectively, and display an overall resistance increase using a user interface.

2. The voltage resistance control device of claim 1, wherein the second layer is composed of tungsten oxide .

3. The voltage resistance control device of claim 1, wherein the first layer consists of a dielectric metal oxide.

4. The voltage resistance control device of claim 1, wherein the first layer is composed of hafnium dioxide .

5. The voltage resistance control device of claim 1, further comprising a layered shaped contact comprising the shaped contact disposed on the second layer disposed on the first layer, wherein the layered shaped contact operatively connects a first electrode and a second electrode.

6. A computer-implemented method, comprising: identifying at least two filament-like channels within a first layer made of a metal oxide within a voltage resistance control device according to any one of claims 1 to 5 by using a plurality of sensor devices; identifying a plurality of filament-like portions parallel to the at least two filament-like channels within the first layer within the voltage resistance control device; implementing a resistance tuning in at least one identified filament-like portion within the plurality of filament-like portions parallel to the at least two filament-like channels within the first layer within the voltage resistance control device; and laterally applying a predetermined voltage through the at least one identified filament-like portion within the first layer via the at least two filament-like conductive channels. determining a flow of a plurality of charged ions through the first layer, wherein the flow of charged ions requires a conductive medium to transport charged ions via the at least two filament-like conductive channels.

7. The computer-implemented method of claim 6, wherein identifying the at least two filamentary conductive pathways comprises:

8. The computer-implemented method of claim 7, wherein determining the flow of the plurality of charged ions through the first layer comprises: determining the flow of the plurality of charged ions through the at least two identified filament-like channels for a first fixed time period; and determining the flow of the plurality of charged ions through the at least two identified filament-like channels for a second fixed time period, wherein there is a difference of at least three seconds between the first fixed time period and the second fixed time period. transmitting instructions to the plurality of identified filament-like portions to receive charged ions through the at least two filament-like channels within the first layer.

9. The computer-implemented method of claim 6, wherein implementing resistance tuning in at least one identified filamentary portion comprises: selectively tailoring a resistance of the plurality of individual filament portions by using the application of the predetermined voltage.

10. The computer-implemented method of claim 6, wherein implementing resistance tuning in at least one identified filament segment comprises:

9. The computer-implemented method of claim 8, wherein the predetermined voltage is applied to the plurality of individual filament portions in a range of 0.1 to 10 volts.

11. The computer-implemented method of claim 6, wherein applying the predetermined voltage through the first layer laterally comprises: uniformly applying the predetermined voltage through the plurality of filamentary portions within the first layer.

12. The computer-implemented method of claim 6, further comprising: applying a different predetermined voltage to each respective filamentary portion within the plurality of filamentary portions within the first layer.

13. A computer system comprising: one or more computer processors; one or more computer-readable storage media coupled to the one or more computer processors comprising instructions that, when executed by the one or more computer processors, perform the method of any one of claims 6-12.

14. A computer program product comprising instructions executable by a processor to cause the processor to perform the method of any one of claims 6-12.

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