Color filter substrate and in-cell touch-type display device including the same

Abstract

The present disclosure discloses a color filter substrate and an in-cell touch-type display device including the color filter substrate, wherein a low-reflection, high-resistance film is disposed on the top surface of the color filter substrate. The low-reflection, high-resistance film generates finger capacitance, forms an anti-static path, and improves the reflectivity of the display device.

Description

Technical Field

[0001] The present disclosure relates to a color filter substrate, and more particularly, to a color filter substrate having a low-reflection and high-resistance film.

[0002] Furthermore, the present disclosure relates to an in-cell touch-type display device including a color filter substrate having a low-reflection high-resistance film. Background Art

[0003] Display devices display images. Recently, with the development of display technology, flat panel display devices have become widely used. Flat panel display devices include liquid crystal display devices, organic electroluminescent display devices, and micro LED display devices.

[0004] Flat panel display devices operate in response to a stimulus (ie, a touch applied to a surface of the device) to provide convenience to the user. In other words, the flat panel display device has the function of a touch panel.

[0005] Therefore, flat panel display devices including touch panel functions are applied to various fields, including monitors such as navigation, industrial terminals, notebook computers, financial automation equipment and game consoles, portable terminals such as mobile phones, MP3, PDA, PMP, PSP, portable game consoles and DMB receivers, and home appliances such as refrigerators, microwave ovens, washing machines, etc.

[0006] In order to include a touch panel function in a flat panel display device, there are a method of manufacturing a separate touch screen (touch panel) and attaching it to a display panel, and a method of directly forming a touch element on the display panel.

[0007] The method of attaching a separate touch screen to a display panel may be a complicated process and may increase the thickness of the display device.

[0008] In a method of directly forming a touch element on a display panel, static electricity may be generated on a color filter substrate due to frequent user touches, and thus touch sensing performance may be degraded due to such static electricity. Summary of the Invention

[0009] This summary is provided to introduce selected concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify all key features or essential features of the claimed subject matter, nor is it intended to be used solely as an aid in determining the scope of the claimed subject matter.

[0010] An object of the present disclosure is to provide a color filter substrate having an excellent touch sensing effect and an excellent electrostatic discharge effect.

[0011] In addition, an object of the present disclosure is to provide an in-cell touch-type display device including a color filter substrate excellent in both touch detection effect and electrostatic discharge effect.

[0012] The objects of the present disclosure are not limited to the above-mentioned objects. Other objects and advantages of the present disclosure not mentioned above can be understood from the following description, and these other objects and advantages can be more clearly understood from the embodiments of the present disclosure. In addition, it will be easily understood that the objects and advantages of the present disclosure can be achieved by the features disclosed in the claims and their combinations.

[0013] One aspect of the present disclosure provides a color filter substrate, comprising: a first substrate; a color filter disposed on a bottom surface of the first substrate; and an upper film disposed on a top surface of the first substrate, wherein the upper film is made of In2O3 and further contains SiO2 accounting for 13% to 15% by weight and SnO2 accounting for 10% or less by weight.

[0014] In one embodiment of the color filter substrate, the upper film has 10 6 to 10 8 Sheet resistance of Ω / sq.

[0015] In one embodiment of the color filter substrate, the upper film has a thickness of 50 to 100 mm. thickness.

[0016] In one embodiment of the color filter substrate, the color filter substrate further includes a polarizing plate disposed on a top surface of the upper film.

[0017] Another aspect of the present disclosure provides an in-box touch-type display device, which includes: a device substrate in which a plurality of pixel areas are defined, wherein thin film transistors and touch lines are arranged on the device substrate; and a color filter substrate arranged on the device substrate, wherein the color filter substrate includes: a first substrate; a color filter arranged on a bottom surface of the first substrate; and an upper film arranged on a top surface of the first substrate, wherein the upper film is made of In2O3 and further contains SiO2 accounting for 13% to 15% by weight and SnO2 accounting for 10% or less by weight.

[0018] In one embodiment of an in-box touch-type display device, the device substrate includes: a second substrate; gate lines and data lines disposed on a top surface of the second substrate and crossing each other to define a pixel area; a thin film transistor disposed in the intersection between the gate lines and the data lines; a protective layer disposed on a top surface of the thin film transistor; a pixel electrode disposed on a top surface of the protective layer and connected to a drain electrode of the thin film transistor; a common electrode overlapping the pixel electrode; and a touch line electrically connected to the common electrode.

[0019] In one embodiment of the in-cell touch-type display device, the common electrode is individually divided into a plurality of touch blocks, each block including some pixel areas among the plurality of pixel areas.

[0020] In one embodiment of the in-cell touch-type display device, each touch line is electrically connected to each touch block of the common electrode.

[0021] In one embodiment of the in-box touch display device, the upper film has 10 6 to 10 8 Sheet resistance of Ω / sq.

[0022] In one embodiment of the in-box touch display device, the upper film has a thickness of 50 to 100 mm. thickness.

[0023] In one embodiment of the in-cell touch type display device, the in-cell touch type display device further includes a polarizing plate disposed on a top surface of the upper film.

[0024] Effects according to the present disclosure may be as follows, but may not be limited thereto.

[0025] According to the color filter substrate and the in-cell touch-type display device including the color filter substrate according to the present disclosure, a high-resistance film is formed on the top surface of the color filter substrate. The high-resistance film on the top surface of the color filter substrate enables the generation of finger capacitance between a finger touching the top of the color filter substrate and a common electrode of the device substrate.

[0026] Furthermore, the color filter substrate and the in-cell touch-type display device including the same according to the present disclosure can discharge static electricity via the high resistance film on the top surface of the color filter substrate, so that a separate film for discharging static electricity may not be formed on the high resistance film.

[0027] Furthermore, in the color filter substrate and the touch-in-cell display device including the same according to the present disclosure, the high resistance film formed on the top surface of the color filter substrate exhibits low visible light reflectivity, thereby improving the visibility of the touch-in-cell display device.

[0028] In addition to the above-described effects, specific effects according to the present disclosure will be described together with specific embodiments for carrying out the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A color filter substrate according to an embodiment of the present disclosure is schematically illustrated.

[0030] Figure 2 A color filter substrate according to another embodiment of the present disclosure is schematically illustrated.

[0031] Figure 3 An in-box touch-type display device according to an embodiment of the present disclosure is schematically illustrated.

[0032] Figure 4 A device substrate that can be used in an in-box touch-type display device according to an embodiment of the present disclosure is schematically shown.

[0033] Figure 5 The structure of the touch block and the touch line is schematically shown.

[0034] Figure 6 is a graph showing the measurement results of the refractive index of SiO 2 -doped In 2 O 3 films based on the SiO 2 content.

[0035] Figure 7 The weight of In2O3 is 78%, the weight of SiO2 is 17%, the weight of SnO2 is 5% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0036] Figure 8 The weight of In2O3 is 81%, the weight of SiO2 is 16%, the weight of SnO2 is 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0037] Figure 9 The weight of In2O3 is 82%, the weight of SiO2 is 15%, the weight of SnO2 is 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0038] Figure 10 The weight of In2O3 is 78%, the weight of SiO2 is 17%, the weight of SnO2 is 5% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0039] Figure 11 The weight of In2O3 is 81%, the weight of SiO2 is 16%, the weight of SnO2 is 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0040] Figure 12 The weight of In2O3 is 82%, the weight of SiO2 is 15%, the weight of SnO2 is 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0041] Figure 13 is a graph showing the measurement results of the sheet resistance, reflectivity, and transmittance of the SiO2-SnO2-doped In2O3 film (T_1) based on the O2 partial pressure under the conditions of 7 kW and Ar 450 sccm.

[0042] Figure 14 The temperature is 60℃ and the relative humidity is 90%. Figure 13 A graph showing the time-dependent measurement results of the sheet resistance of the SiO2-SnO2-doped In2O3 film (T_1) fabricated under an O2 partial pressure of 4.8%.

[0043] Figure 15 is a graph showing the measurement results of the sheet resistance, reflectivity, and transmittance of the SiO2-SnO2-doped In2O3 film (T_2) based on the O2 partial pressure under the conditions of 8 kW and Ar 450 sccm.

[0044] Figure 16 The temperature is 60℃ and the relative humidity is 90%. Figure 15 A graph showing the time-dependent measurement results of the sheet resistance of the SiO2-SnO2-doped In2O3 film (T_2) fabricated under an O2 partial pressure of 5.7%.

[0045] Figure 17 The wavelength-dependent reflectivity measurement results of the ITO film, T_1 film, and T_2 film are shown. DETAILED DESCRIPTION

[0046] The advantages and features of the present disclosure, as well as methods for achieving these advantages and features, will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below, but may be implemented in a variety of different forms. Therefore, these embodiments are set forth only to complete the present disclosure and fully inform those skilled in the art of the present disclosure of its scope, and the present disclosure is limited only by the scope of the claims.

[0047] The shapes, sizes, ratios, angles, quantities, etc. disclosed in the drawings for describing the embodiments of the present disclosure are exemplary, and the present disclosure is not limited thereto. The same reference numerals represent the same elements herein. In addition, to simplify the description, descriptions and details of well-known steps and elements are omitted. In addition, in the following detailed description of the present disclosure, many specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it should be understood that the present disclosure can be implemented without these specific details. In other examples, well-known methods, processes, components, and circuits are not described in detail to avoid unnecessarily obscuring the understanding of various aspects of the present disclosure.

[0048] The terms used herein are only for the purpose of describing specific embodiments, rather than for limiting the present disclosure. As used herein, the singular forms "one" and "an" are intended to also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include" and "comprising" when used in this specification specify the presence of the features, integers, operations, elements and / or parts described, but do not exclude the presence or addition of one or more other features, integers, operations, elements, parts and / or parts thereof. As used herein, the term "and / or" includes any and all combinations of one or more associated listed items. When preceding a list of elements, expressions such as "at least one" can modify the elements of the entire list, and may not modify the individual elements of the list. In the interpretation of numerical values, even without clear descriptions, errors or tolerances therein may also occur.

[0049] Furthermore, it should be understood that when a first element or layer is referred to as being "on" a second element or layer, the first element can be directly disposed on the second element, or can be indirectly disposed on the second element with a third element or layer disposed between the first and second elements or layers. It should be understood that when an element or layer is referred to as being "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer, directly connected to or directly coupled to the other element or layer, or one or more intervening elements or layers can be present. It should be understood that when an element or layer is referred to as being "between" two elements or layers, it can be the only element or layer between the two elements or layers, or one or more intervening elements or layers can also be present.

[0050] Furthermore, as used herein, when a layer, film, region, plate, etc. is disposed “on” or “on top of” another layer, film, region, plate, etc., the former may be in direct contact with the latter, or another layer, film, region, plate, etc. may be disposed between the former and the latter. As used herein, when a layer, film, region, plate, etc. is disposed directly “on” or “on top of” another layer, film, region, plate, etc., the former is in direct contact with the latter, and no further layer, film, region, plate, etc. is disposed between the former and the latter. Furthermore, as used herein, when a layer, film, region, plate, etc. is disposed “below” or “beneath” another layer, film, region, plate, etc., the former may be in direct contact with the latter, or another layer, film, region, plate, etc. may be disposed between the former and the latter. As used herein, when a layer, film, region, plate, etc. is disposed directly “below” or “beneath” another layer, film, region, plate, etc., the former is in direct contact with the latter, and no further layer, film, region, plate, etc. is disposed between the former and the latter.

[0051] In descriptions of temporal relationships, for example, a temporal precedence relationship between two events such as "after," "subsequently," "before," etc., unless "directly after," "directly after," or "directly before" is indicated, another event may occur in between.

[0052] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the spirit and scope of the present disclosure, the first element, component, region, layer, or part described below may be referred to as a second element, component, region, layer, or part.

[0053] The features of the various embodiments of the present disclosure may be partially or completely combined with each other, and may be technically related to each other or operate with each other. The embodiments may be implemented independently of each other, and may be implemented together in a related relationship.

[0054] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention pertains. It should also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0055] Hereinafter, preferred embodiments of a color filter substrate and an in-cell touch-type display device including the same according to the present disclosure will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals are used to designate the same or similar elements.

[0056] Figure 1 A color filter substrate according to an embodiment of the present disclosure is schematically illustrated.

[0057] refer to Figure 1 , the color filter substrate 100 includes a first substrate 110 , a color filter 120 and an upper film 140 .

[0058] The first substrate 110 may be made of glass or plastic.

[0059] The color filter 120 is disposed on the bottom surface of the first substrate 110. More specifically, the first substrate 110 can be divided into a light-transmitting area and a light-shielding area. The color filter 120 can be disposed in the light-transmitting area and on the bottom surface of the first substrate 110. The black matrix 130 can be disposed in the light-shielding area and on the bottom surface of the first substrate 110.

[0060] The upper film 140 is disposed on the top surface of the first substrate 110. In the present disclosure, the upper film 140 performs a touch function and an electrostatic discharge function.

[0061] In the present disclosure, the upper film 140 is made of In2O3 containing 13 to 15 weight % of SiO2 and 10 weight % or less of SnO2. The upper film having the above composition can exhibit a higher sheet resistance than ITO (Indium Tin Oxide).

[0062] For example, when the upper film has a sheet resistance of relatively low 10 3 When the upper film is made of an ITO material with a sheet resistance of 10 Ω / sq, the upper film can perform an electrostatic discharge function, but finger capacitance may not be generated between the finger touching the top surface of the color filter substrate and the common electrode of the device substrate, which may reduce the touch performance. On the contrary, when the upper film is not present, although finger capacitance can be generated, electrostatic discharge may not occur. Therefore, a separate electrostatic discharge path must be provided. Therefore, the inventors have conducted extensive research and found that when the sheet resistance of the upper film 140 is between 10 6 to 10 8 When the resistance is within the range of Ω / sq, both the touch function and the electrostatic discharge function can be performed well.

[0063] According to the present disclosure, the upper film 140 is based on In 2 O 3 as a transparent conductive material.

[0064] The SiO2 included in upper film 140 serves to increase the resistance of upper film 140. Specifically, SiO2 has the lowest refractive index among oxide materials, high bonding strength, and a large bandgap, ensuring high resistance compared to ITO and improving transmittance. When the SiO2 content is less than 13% by weight, the transmittance of the upper film decreases and the reflectivity increases. Conversely, when the SiO2 content exceeds 15% by weight, the sheet resistance of the upper film may be too high, making it difficult to perform the electrostatic discharge function.

[0065] SnO2, along with In2O3, prevents the resistance of the upper film from becoming too high. According to the present disclosure, the upper film is required to have a certain high sheet resistance, and SnO2 may not be included in the upper film. When the content of SnO2 exceeds 10% by weight and is too high, the transmittance of the upper film may decrease.

[0066] As described above, the upper film 140 made of In2O3 and including 13 to 15% by weight of SiO2 and 10% by weight or less of SnO2 in combination with process conditions (eg, oxygen partial pressure during deposition) can exhibit 10 6 to 10 8 Furthermore, the upper film 140 may exhibit a transmittance of 97% or greater and a reflectance of 9.5% or less.

[0067] The upper film may have 50 to (ie, 5 to 20 nm) in thickness. 120 to The thinner the upper film, the better the transmittance. However, when the upper film is too thin (less than ), the sheet resistance of the upper film is greatly increased, so that the electrostatic discharge performance may be reduced. In one example, when the thickness of the upper film exceeds When , the transmittance may decrease and the reflectance may increase.

[0068] Figure 2 A color filter substrate according to another embodiment of the present disclosure is schematically illustrated.

[0069] Figure 2 The color filter substrate shown includes a first substrate 110, a color filter 120 and an upper film 140, as shown in FIG. Figure 1 As in the color filter substrate shown.

[0070] In one example, Figure 2The color filter substrate shown further includes a polarizing plate 150 disposed on the top surface of the upper film 140. The polarizing plate 150 allows linearly polarized light to be selected from the randomly mixed unpolarized light and transmits the linearly polarized light therethrough in a specific direction. Furthermore, the polarizing plate 150 suppresses a reduction in visibility due to reflection of external light.

[0071] As described above, when the upper film is absent, electrostatic discharge does not occur through the first substrate. Therefore, the polarizing plate is coated with a conductive material for electrostatic discharge. However, according to the present disclosure, electrostatic discharge can be achieved via the upper film 140. Therefore, even when the polarizing plate is included in the color filter substrate, it is not necessary to coat the polarizing plate with a conductive material for electrostatic discharge.

[0072] Figure 3 An in-box touch-type display device according to an embodiment of the present disclosure is schematically illustrated.

[0073] refer to Figure 3 , the in-cell touch-type display device according to the present disclosure includes a color filter substrate 100 and a device substrate 200 .

[0074] The color filter substrate 100 is disposed on a top surface of the device substrate 200 .

[0075] As described above, the color filter substrate 100 includes the first substrate 110 , the color filter 120 disposed on the bottom surface of the first substrate, and the upper film 140 disposed on the top surface of the first substrate.

[0076] The upper film 140 of the color filter substrate 100 is based on In 2 O 3 and further includes 13 to 15% by weight of SiO 2 and 10% by weight or less of SnO 2 .

[0077] The upper film 140 of the color filter substrate 100 may have 10 6 to 10 8 Sheet resistance of Ω / sq.

[0078] In addition, the upper film 140 may have a thickness of 50 to thickness.

[0079] A polarizing plate 150 may be additionally disposed on the top surface of the upper film 140 of the color filter substrate 100 .

[0080] A plurality of pixel regions are defined in the device substrate 200. Thin film transistors and touch lines are provided on the top surface of the device substrate 200. According to the present disclosure, a display device in which touch lines for transmitting touch signals are provided on the top surface of the device substrate 200 is referred to as an in-box display device.

[0081] exist Figure 3In the embodiment, the liquid crystal layer 300 is disposed between the color filter substrate 100 and the device substrate 200. In addition, a cover layer 400 such as a cover glass may be disposed on a top surface of the color filter substrate 100.

[0082] Figure 3 An example of an in-cell touch type liquid crystal display device is shown. However, the present disclosure is not limited thereto, but may be applied to an in-cell touch type OLED display device or an in-cell touch type micro LED display device.

[0083] Figure 4 A device substrate 200 that may be used in an in-box touch-type display device according to an embodiment of the present disclosure is schematically illustrated.

[0084] The pixel area of ​​the device substrate 200 is defined by gate lines and data lines crossing each other and disposed on the second substrate 201. Thin film transistors are disposed in the crossing area between the gate lines and the data lines.

[0085] A gate line (not shown) and a gate electrode 221 branched from the gate line are disposed on the top surface of the second substrate 201 .

[0086] The gate insulating film 222 is provided on the top surface of the second substrate 201 on which the gate electrode is provided.

[0087] The active layer 223 is disposed on a top surface of the gate insulating film 222 .

[0088] A source electrode 224 a branched from the data line 224 and a drain electrode 224 b spaced apart from the source electrode are disposed on a top surface of the active layer 223 .

[0089] A protective layer 225 is formed on the gate insulating film 222 on which the thin film transistor is provided. The protective layer 225 can be made of an insulating inorganic material such as SiO2 and SiN or an insulating organic material such as PAC (photoacryl compound), and can be composed of one or more layers. When the protective layer 225 has a multi-layer structure, it is preferable that the topmost layer be made of PAC for planarization.

[0090] The pixel electrode 230 is disposed on the top surface of the protective layer and is connected to the drain electrode 224b of the thin film transistor via a contact hole.

[0091] The common electrode 260 overlaps the pixel electrode 230 and the protective film 250 while being interposed therebetween. Figure 4 In the embodiment, a structure in which the common electrode 260 is used as the top layer (Vcom TOP structure) is provided. However, the present disclosure is not limited thereto. A structure in which the pixel electrode 230 is used as the top layer (PXL TOP structure) may be provided.

[0092] The touch line 210 is electrically connected to the common electrode 260. The touch line 210 may overlap with the data line 224. Figure 4 An example is shown in which an additional protective film 240 is provided on the protective layer 225 on which the pixel electrode 230 is provided, and the touch line 210 is provided on the top surface of the additional protective film 240 and overlaps with the data line 224. However, this is merely an example. Any touch line applied to a known in-box display device can be applied to the present disclosure.

[0093] Figure 5 The structure of the touch block and the touch line is schematically shown.

[0094] exist Figure 5 , reference numeral 310 denotes a data driver, and reference numeral 320 denotes a MUX. The data driver 310 converts an image signal DATA input from a timing control IC provided in an external system (not shown) into frame-based digital image data R, G, and B, and converts the digital image data R, G, and B into analog data voltages and supplies them to the display device.

[0095] like Figure 5 As shown, the common electrode 260 may be divided into a plurality of touch blocks TB, each of which corresponds to some of the plurality of pixel areas. The touch line 210 may be electrically connected to the common electrode on a touch block basis.

[0096] like Figure 4 As shown, the touch line 210 extends across the touch block TB of the common electrode 260 and is disposed below the common electrode 260. Therefore, the touch line 210 senses a change in capacitance load that occurs when a finger touches the block TB and transmits the change to the sensing circuit.

[0097] The touch line 210 is independently connected to the common electrode 260 of each touch block TB. The common electrode 260 provides a common voltage to each pixel region during the display period and provides a touch sensing signal to each pixel region during the non-display period, so that the touch line detects whether a finger touches the common electrode 260.

[0098] The touch sensing signals provided by touch lines 210 may be multiple clock signals CLK. When a user touches the display area with a finger, touch capacitance may be generated between touch blocks TB of common electrodes 260. The touch capacitance resulting from the user's touch may be compared with a reference capacitance. The user's touch position may then be detected based on the comparison result. An operation may be performed based on the detected touch position.

[0099] At this point, the coordinates of the position where the user touch occurs are identified through comparison between the touch capacitance and the reference capacitance, and an operation corresponding to the coordinates of the touch occurrence position is performed.

[0100] Example

[0101] Hereinafter, preferred examples are presented to help understand the present disclosure. However, the following examples are provided only to make it easier for those skilled in the art to understand the present disclosure. The present disclosure is not limited to the following examples.

[0102] Figure 6 This is a graph showing the measurement results of the refractive index of the SiO2-doped In2O3 film based on the SiO2 content. This can be derived based on the following equation 1, where the refractive index of a material having multiple components is determined based on the content ratio between the materials having the refractive index:

[0103] [Equation 1]

[0104]

[0105] At this point, 12 represents the refractive index of the mixture of material 1 and material 2, n1 refers to the refractive index of material 1, n2 refers to the refractive index of material 2, Φ1 represents the volume fraction of material 1, and Φ2 represents the volume fraction of material 2.

[0106] refer to Figure 6 , it can be seen that when In2O3 with a refractive index of 1.95 and SiO2 with a refractive index of 1.5 are used, the refractive index decreases as the SiO2 content increases. In particular, it can be seen that when the volume fraction of SiO2 contained is 30% or more (about 13% or more by weight), the refractive index of the upper film can be 1.8 or less.

[0107] Figure 7 The weight of In2O3 is 78%, the weight of SiO2 is 17%, the weight of SnO2 is 5% and the film thickness is A graph showing the results of sheet resistance, reflectivity, and transmittance measurements of a SiO2-SnO2-doped In2O3 film as a function of oxygen partial pressure under conditions of . The upper film made of In2O3 and doped with SiO2-SnO2 was deposited using a vacuum deposition method.

[0108] exist Figures 7 to 12 In the figure, the scale of sheet resistance is logarithmic.

[0109] refer to Figure 7 , it can be seen that when the weight of In2O3 accounts for 78%, the weight of SiO2 accounts for 17%, the weight of SnO2 accounts for 5% and the film thickness is Under the conditions of , when the oxygen partial pressure increases during the vacuum deposition process, the transmittance increases, the reflectivity decreases, and the sheet resistance decreases. However, it can be seen that the resistance of the upper film is higher than 10 due to the fact that it contains 17% by weight of SiO2. 9 Ω / sq.

[0110] Figure 8 The weight of In2O3 is 81%, the weight of SiO2 is 16%, the weight of SnO2 is 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0111] refer to Figure 8 , it can be seen that when the weight of In2O3 accounts for 81%, the weight of SiO2 accounts for 16%, the weight of SnO2 accounts for 3% and the film thickness is Under the conditions of , when the oxygen partial pressure increases during the vacuum deposition process, the transmittance increases and the reflectance decreases. However, even Figure 8 It can also be seen that the resistance of the upper film is higher than about 10 due to the 16% by weight SiO2 contained. 8 Ω / sq.

[0112] Figure 9 It is shown that the weight of In2O3 accounts for 82%, the weight of SiO2 accounts for 15%, the weight of SnO2 accounts for 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0113] refer to Figure 9 , it can be seen that when the weight of In2O3 accounts for 82%, the weight of SiO2 accounts for 15%, the weight of SnO2 accounts for 3% and the film thickness is Under the conditions of , when the oxygen partial pressure increases during vacuum deposition, the transmittance increases and the reflectance decreases. In addition, the reference Figure 9 , it can be seen that when vacuum deposition is performed under an oxygen partial pressure of 2% by volume, a film having a thickness of about 10 7 The upper film has a sheet resistance of Ω / sq.

[0114] Figure 10 The weight of In2O3 is 78%, the weight of SiO2 is 17%, the weight of SnO2 is 5% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0115] refer to Figure 10 , it can be seen that when the weight of In2O3 accounts for 78%, the weight of SiO2 accounts for 17%, the weight of SnO2 accounts for 5% and the film thickness is Under the conditions of , when the oxygen partial pressure increases during vacuum deposition, the transmittance increases, the reflectivity decreases, and the sheet resistance decreases. In addition, it can be seen that when the same composition is compared with each other Figure 7 and 10 When the thickness of the upper film decreases, it exhibits relatively high transmittance and relatively low reflectivity.

[0116] However, reference Figure 10 It can be seen that the resistance of the upper film is higher than about 10 due to the fact that it contains 17% by weight of SiO2. 10 Ω / sq.

[0117] Figure 11 The weight of In2O3 is 81%, the weight of SiO2 is 16%, the weight of SnO2 is 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0118] refer to Figure 11 , it can be seen that when the weight of In2O3 accounts for 81%, the weight of SiO2 accounts for 16%, the weight of SnO2 accounts for 3% and the film thickness is Under the conditions of , when the oxygen partial pressure increases during vacuum deposition, the transmittance increases, the reflectivity decreases, and the sheet resistance decreases. In addition, it can be seen that when the same composition is compared with each other Figure 8 and 11 When the thickness of the upper film decreases, it exhibits relatively high transmittance and relatively low reflectivity.

[0119] However, reference Figure 11 It can be seen that the resistance of the upper film is higher than 10 due to the fact that it contains 16% by weight of SiO2. 8 Ω / sq.

[0120] Figure 12 It is shown that the weight of In2O3 accounts for 82%, the weight of SiO2 accounts for 15%, the weight of SnO2 accounts for 3% and the film thickness is A graph showing the measurement results of sheet resistance, reflectivity, and transmittance of SiO2-SnO2-doped In2O3 films based on oxygen partial pressure under conditions of .

[0121] refer to Figure 12 , it can be seen that when the weight of In2O3 accounts for 82%, the weight of SiO2 accounts for 15%, the weight of SnO2 accounts for 3% and the film thickness is Under the conditions of , when the oxygen partial pressure increases during vacuum deposition, the transmittance increases, the reflectivity decreases, and the sheet resistance decreases. In addition, it can be seen that when the same composition is compared with each other Figure 9 and 12 When the thickness of the upper film decreases, it exhibits relatively high transmittance and relatively low reflectivity.

[0122] In addition, reference Figure 12 It can be seen that during the vacuum deposition process, under the condition of 2% oxygen partial pressure in volume, a film with a thickness of about 10 7 The upper film has a sheet resistance of Ω / sq. This is due to the 15% by weight SiO2 content.

[0123] refer to Figure 7-12 The results show that when the SiO2 content is higher than 15% by weight, the sheet resistance of the upper film is significantly high, regardless of other conditions. Therefore, it is difficult to obtain 10 6 to 10 8 Target sheet resistance of Ω / sq.

[0124] When the SiO2 content is reduced to 15% by weight, the transmittance decreases and the reflectance increases, with small changes. Reducing the film thickness has the effect of increasing the transmittance and reducing the reflectance. Therefore, by reducing the film thickness, the decrease in transmittance and increase in reflectance caused by reducing the SiO2 content can be minimized.

[0125] Figure 13 is a graph showing the measurement results of sheet resistance, reflectivity, and transmittance of a SiO2-SnO2-doped In2O3 film (T_1) based on O2 partial pressure under the conditions of 7 kW and Ar 450 sccm.

[0126] The composition of the upper film is 82% by weight of In2O3, 15% by weight of SiO2, and 3% by weight of SnO2, and the film thickness is

[0127] refer to Figure 13 , it can be seen that when under the conditions of 7kW and Ar 450sccm, during vacuum deposition, as the oxygen partial pressure increases, the transmittance tends to increase and the reflectivity tends to decrease, while the change is small. In addition, it can be seen that the change in the resistance value is not large.

[0128] Figure 14 The temperature is 60℃ and the relative humidity is 90%. Figure 13 A graph showing the time-dependent measurement results of the sheet resistance of the SiO2-SnO2-doped In2O3 film (T_1) fabricated under an O2 partial pressure of 4.8%.

[0129] refer to Figure 14 , it can be seen that under high temperature and high humidity conditions, the change in each of the sheet resistance, transmittance and reflectance of each of the top surface, middle surface and bottom surface of the upper film over time is not significant.

[0130] Figure 15 is a graph showing the measurement results of the sheet resistance, reflectivity, and transmittance of the SiO2-SnO2-doped In2O3 film (T_2) based on the O2 partial pressure under the conditions of 8 kW and Ar 450 sccm.

[0131] Figure 16 The temperature is 60℃ and the relative humidity is 90%. Figure 15 A graph showing the time-dependent measurement results of the sheet resistance of the SiO2-SnO2-doped In2O3 film (T_2) fabricated under an O2 partial pressure of 5.7%.

[0132] The composition of the upper film is 82% by weight of In2O3, 15% by weight of SiO2, and 3% by weight of SnO2, and the film thickness is

[0133] refer to Figure 15 , it can be seen that under the conditions of 8kW and Ar 450sccm, during the vacuum deposition process, as the oxygen partial pressure increases, the transmittance increases slightly, while the reflectivity hardly changes. In addition, it can be seen that the resistance value does not change much.

[0134] In addition, reference Figure 16 , it can be seen that under high temperature and high humidity conditions, the change in each of the sheet resistance, transmittance and reflectance of each of the top surface, middle surface and bottom surface of the upper film over time is not significant.

[0135] In addition, based on Figure 13 and Figure 15 From the comparison results between the two, it can be seen that the power conditions applied during the vacuum deposition process do not significantly affect the film quality.

[0136] Figure 17 The wavelength-dependent reflectivity measurement results of the ITO film, the T_1 film, and the T_2 film are shown.

[0137] refer to Figure 17 , the average reflectivity of the ITO film in the visible light region (wavelength of 360 to 740 nm) exhibits 5.81%, while the average reflectivities of the T_1 and T_2 films exhibit relatively low reflectivities of 5.47% and 5.38%, respectively.

[0138] When a SiO2-SnO2-doped In2O3 film is applied to the upper film of a color filter substrate according to the present disclosure, a lower reflectivity can be achieved than when an ITO upper film is applied. Therefore, a configuration in which a SiO2-SnO2-doped In2O3 film is applied to the upper film of a color filter substrate is more suitable for realizing a low-reflection display device.

[0139] Although the embodiments of the present disclosure have been described in more detail with reference to the accompanying drawings, the present disclosure is not necessarily limited to these embodiments. Without departing from the scope of the technical concept of the present disclosure, the present disclosure can be implemented in various modified ways. Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical concept of the present disclosure, but are intended to describe the present disclosure. The scope of the technical concept of the present disclosure is not limited by the embodiments. Therefore, it should be understood that the embodiments described above are illustrative and non-restrictive in all aspects. The scope of protection of the present disclosure should be interpreted by the claims, and all technical concepts within the scope of the present disclosure should be interpreted as included within the scope of the present disclosure.

Claims

1. A color filter substrate, comprising: a first substrate; a color filter, disposed on the bottom surface of the first substrate; as well as an upper film, disposed on the top surface of the first substrate, wherein the upper film comprises 13 to 15% by weight of SiO2 and 10% or less by weight of SnO2 and In2O3. wherein the upper film is configured to perform an electrostatic discharge function, and Wherein, the upper film has 10 6 to 10 8 Sheet resistance of Ω / sq.

2. The color filter substrate according to claim 1, wherein The upper film has 50 to thickness.

3. The color filter substrate according to claim 1, wherein The color filter substrate further includes a polarizing plate disposed on a top surface of the upper film.

4. An in-box touch display device comprising: a device substrate defining a plurality of pixel regions, wherein thin film transistors and touch lines are disposed on the device substrate; and a color filter substrate disposed on the device substrate, Wherein, the color filter substrate comprises: a first substrate; a color filter disposed on the bottom surface of the first substrate; and an upper film, disposed on the top surface of the first substrate, wherein the upper film comprises 13 to 15% by weight of SiO2 and 10% or less by weight of SnO2 and In2O3. wherein the upper film is configured to perform an electrostatic discharge function, and Wherein, the upper film has 10 6 to 10 8 Sheet resistance of Ω / sq.

5. The in-box touch display device according to claim 4, wherein: The device substrate comprises: a second substrate; Gate lines and data lines are disposed on the top surface of the second substrate and intersect each other to define pixel areas; a thin film transistor disposed at an intersection between the gate line and the data line; a protective layer, disposed on the top surface of the thin film transistor; a pixel electrode, disposed on a top surface of the protective layer and connected to the drain electrode of the thin film transistor; a common electrode, overlapping the pixel electrode; and A touch line is electrically connected to the common electrode.

6. The in-box touch display device according to claim 5, wherein: The common electrode is individually divided into a plurality of touch blocks, each block including some of a plurality of pixel areas, and each touch line is electrically connected to each touch block of the common electrode.

7. The in-box touch-type display device according to claim 4, wherein: The upper film has 50 to thickness.

8. The in-box touch display device according to claim 4, wherein: The in-cell touch-type display device further includes a polarizing plate disposed on a top surface of the upper film.

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