Method for bonding a semiconductor

Abstract

The application discloses a kind of semiconductor bonding methods, comprising: semiconductor is loaded on the fixture in vacuum chamber, and nitrogen is continuously introduced into vacuum chamber;Wherein, the temperature of fixture is stabilized at 80~120 ℃, and the flow of nitrogen is 2.5L / min~5.0L / min;Semiconductor is carried out first bonding treatment by laser emission device;Wherein, the first working voltage of laser emission device is 2.5V~3.5V, and the first working time is 1.5S~2.0S;Semiconductor is carried out second bonding treatment by laser emission device;Wherein, the second working voltage of laser emission device is less than the first working voltage, and the second working voltage is 2.0V~3.0V, and the second working time is 0.2S~0.3S;Semiconductor is carried out third bonding treatment by laser emission device;Wherein, the third working voltage of laser emission device is less than 1.2V, and the third working time is 0.2S.The technical scheme of the application can gradually cool semiconductor during bonding, avoid semiconductor damage, so as to improve product quality.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for bonding semiconductors. Background Technology

[0002] During semiconductor wafer fabrication, semiconductor products are typically mounted on fixtures for testing. The fixtures have solder joints and wiring; the semiconductor's contacts connect with these solder joints to conduct electricity, thus enabling various performance tests.

[0003] Traditional welding processes typically involve heating the fixture to melt the solder joints before bonding the semiconductor. However, the rapid temperature drop of both the fixture and the semiconductor can cause damage due to the semiconductor's rapid thermal expansion and contraction, leading to product malfunctions and affecting product quality. Summary of the Invention

[0004] The technical problem to be solved by the embodiments of the present invention is to provide a semiconductor bonding method that enables the semiconductor to be gradually cooled during bonding, avoids semiconductor damage, and thereby improves product quality.

[0005] To address the aforementioned technical problems, embodiments of the present invention provide a semiconductor bonding method, comprising:

[0006] The semiconductor is loaded onto a fixture in a vacuum chamber, and nitrogen gas is continuously introduced into the vacuum chamber; the temperature of the fixture is stabilized at 80℃~120℃, and the flow rate of nitrogen gas is 2.5L / min~5.0L / min.

[0007] The semiconductor is first bonded using a laser emitting device; wherein the first operating voltage of the laser emitting device is 2.5V to 3.5V, and the first operating time is 1.5S to 2.0S.

[0008] The semiconductor is subjected to a second bonding process using a laser emitting device; wherein the second operating voltage of the laser emitting device is lower than the first operating voltage, and the second operating voltage is 2.0V to 3.0V, and the second operating time is 0.2S to 0.3S.

[0009] The semiconductor is bonded a third time using a laser emitting device; wherein the third operating voltage of the laser emitting device is less than 1.2V and the third operating time is 0.2S.

[0010] Furthermore, the output wavelength of the laser emitting device is 600nm~800nm, the average output power is 45W~60W, the pulse frequency is 100KHz~120KHz, the laser pulse width is 10ns~15ns, and the output spot is a circular spot with a diameter of 0.5mm~1mm.

[0011] Furthermore, prior to the first bonding process of the semiconductor using the laser emitting device, the method further includes:

[0012] A focusing lens is positioned between the laser emitting device and the fixture; wherein the distance between the focusing lens and the fixture is 300μm to 500μm.

[0013] Compared with existing technologies, this invention provides a semiconductor bonding method. The semiconductor is loaded onto a fixture in a vacuum chamber, and nitrogen gas is continuously introduced into the chamber. The temperature of the fixture is stabilized at 80℃~120℃, and the nitrogen flow rate is 2.5L / min~5.0L / min. A first bonding process is performed on the semiconductor using a laser emitting device. The first operating voltage of the laser emitting device is 2.5V~3.5V, and the first operating time is 1.5S~2.0S. A second bonding process is performed on the semiconductor using the laser emitting device. The second operating voltage of the laser emitting device is lower than the first operating voltage, and the second operating voltage is 2.0V~3.0V, with a second operating time of 0.2S~0.3S. A third bonding process is performed on the semiconductor using the laser emitting device. The third operating voltage of the laser emitting device is less than 1.2V, and the third operating time is 0.2S. This method allows for gradual cooling of the semiconductor through stepwise heating during bonding, preventing semiconductor damage and improving product quality. Attached Figure Description

[0014] Figure 1 This is a flowchart of a preferred embodiment of a semiconductor bonding method provided by the present invention. Detailed Implementation

[0015] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0016] This invention provides a semiconductor bonding method, see [link to relevant documentation]. Figure 1 The diagram shown is a flowchart of a preferred embodiment of a semiconductor bonding method provided by the present invention, the method comprising steps S11 to S14:

[0017] Step S11: Load the semiconductor onto the fixture in the vacuum chamber and continuously introduce nitrogen gas into the vacuum chamber; wherein, the temperature of the fixture is stabilized at 80℃~120℃, and the flow rate of nitrogen gas is 2.5L / min~5.0L / min;

[0018] Step S12: Perform the first bonding process on the semiconductor using a laser emitting device; wherein the first operating voltage of the laser emitting device is 2.5V to 3.5V, and the first operating time is 1.5S to 2.0S.

[0019] Step S13: Perform a second bonding process on the semiconductor using a laser emitting device; wherein the second operating voltage of the laser emitting device is lower than the first operating voltage, and the second operating voltage is 2.0V to 3.0V, and the second operating time is 0.2S to 0.3S;

[0020] Step S14: Perform a third bonding process on the semiconductor using a laser emitting device; wherein the third operating voltage of the laser emitting device is less than 1.2V and the third operating time is 0.2S.

[0021] Preferably, the output wavelength of the laser emitting device is 600nm to 800nm, the average output power is 45W to 60W, the pulse frequency is 100KHz to 120KHz, the laser pulse width is 10ns to 15ns, and the output spot is a circular spot with a diameter of 0.5mm to 1mm.

[0022] In practice, firstly, the semiconductor is loaded onto a fixture within a vacuum chamber. Cooling water circulates within the machine beneath the material to maintain the fixture temperature between 80°C and 120°C. Nitrogen gas is continuously introduced into the vacuum chamber at a flow rate of 2.5 L / min to 5.0 L / min. Next, a laser emitting device (e.g., a nanosecond-level pulsed fiber laser) is activated to heat the semiconductor, completing the bonding process. This bonding process is performed in three steps without time intervals between them. The process involves three steps: First, using a laser emitting device to perform a first bonding process on the semiconductor at a first working voltage of 2.5V to 3.5V for a first working time of 1.5 to 2.0 seconds. Second, using a laser emitting device to perform a second bonding process on the semiconductor at a second working voltage of 2.0V to 3.0V, where the second working voltage is lower than the first working voltage, and the second working time is 0.2 to 0.3 seconds. Third, using a laser emitting device to perform a third bonding process on the semiconductor at a third working voltage of less than 1.2V for a third working time of 0.2 seconds.

[0023] It should be noted that the output wavelength of the laser emitting device is 600 nm to 800 nm, the average output power is 45 W to 60 W, the pulse frequency is 100 kHz to 120 kHz, the laser pulse width is 10 nanoseconds to 15 nanoseconds, and the laser spot output by the laser emitting device is a circular spot with a diameter of 0.5 mm to 1 mm.

[0024] As an improvement to the above solution, before the first bonding process of the semiconductor using the laser emitting device, the method further includes:

[0025] A focusing lens is positioned between the laser emitting device and the fixture; wherein the distance between the focusing lens and the fixture is 300μm to 500μm.

[0026] Specifically, in conjunction with the above embodiments, in order to prevent the semiconductor surface from becoming too hot due to laser irradiation, a focusing lens can be set between the laser emitting device and the fixture, and the distance between the focusing lens and the fixture is 300 micrometers to 500 micrometers, so as to prevent the semiconductor surface from becoming too hot and burning the semiconductor during the actual heat treatment process.

[0027] In summary, the semiconductor bonding method provided by this invention involves loading the semiconductor onto a fixture within a vacuum chamber and continuously introducing nitrogen gas into the chamber. The temperature of the fixture is stabilized at 80°C to 120°C, and the nitrogen flow rate is 2.5 L / min to 5.0 L / min. A first bonding process is performed on the semiconductor using a laser emitting device. The first operating voltage of the laser emitting device is 2.5V to 3.5V, and the first operating time is 1.5S to 2.0S. A second bonding process is performed using the laser emitting device. The second operating voltage of the laser emitting device is lower than the first operating voltage, and the second operating voltage is 2.0V to 3.0V, with a second operating time of 0.2S to 0.3S. A third bonding process is performed using the laser emitting device. The third operating voltage of the laser emitting device is less than 1.2V, and the third operating time is 0.2S. This method allows for gradual cooling of the semiconductor through stepwise heating during bonding, preventing semiconductor damage, improving product quality, and significantly reducing the scrap rate.

[0028] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for bonding semiconductors, characterized in that, include: The semiconductor is loaded onto a fixture in a vacuum chamber, and nitrogen gas is continuously introduced into the vacuum chamber; the temperature of the fixture is stabilized at 80℃~120℃, and the flow rate of nitrogen gas is 2.5L / min~5.0L / min. The semiconductor is first bonded using a laser emitting device; wherein the first operating voltage of the laser emitting device is 2.5V~3.5V, and the first operating time is 1.5S~2.0S. The semiconductor is bonded a second time using a laser emitting device; wherein the second operating voltage of the laser emitting device is lower than the first operating voltage, and the second operating voltage is 2.0V~3.0V, and the second operating time is 0.2S~0.3S. The semiconductor is bonded a third time using a laser emitting device; wherein the third operating voltage of the laser emitting device is less than 1.2V and the third operating time is 0.2S. The laser emitting device is used to heat the semiconductor to complete the bonding process. The bonding process is divided into three steps with no time interval between them. The first step is the first bonding process, the second step is the second bonding process, and the third step is the third bonding process.

2. The semiconductor bonding method as described in claim 1, characterized in that, The laser emitting device has an output wavelength of 600nm~800nm, an average output power of 45W~60W, a pulse frequency of 100KHz~120KHz, a laser pulse width of 10ns~15ns, and an output spot that is circular with a diameter of 0.5mm~1mm.

3. The semiconductor bonding method as described in claim 1, characterized in that, Prior to the first bonding process of the semiconductor using a laser emitting device, the method further includes: A focusing lens is positioned between the laser emitting device and the fixture; wherein the distance between the focusing lens and the fixture is 300μm~500μm.

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