Display transfer structure, display device and electronic device

Abstract

The present disclosure provides a display transfer structure, a display device, and an electronic device. A display transfer structure includes a transfer substrate including a plurality of recesses, each of the plurality of recesses including a first trapping portion having a space in which a predetermined object can move and a second trapping portion connected to the first trapping portion and having a shape and size in which the object can be seated, and a micro semiconductor chip located in the second trapping portion. The micro semiconductor chip can be self-aligned in a correct position by the display transfer structure.

Description

Technical Field

[0001] This disclosure relates to a display transfer structure and a display device including the display transfer structure. Background Technology

[0002] Low-power, environmentally friendly light-emitting diodes (LEDs) are increasingly in demand in industry and have been used as display pixels, as well as in lighting devices and LCD backlights. In manufacturing display devices using micro-unit LED chips, pick-and-place methods have been used to transfer the micro-LEDs. However, as the size of micro-LEDs decreases and the size of displays increases, this method suffers from low productivity. Summary of the Invention

[0003] A display transfer structure and a display device using the display transfer structure are provided, in which multiple micro-semiconductor chips are efficiently positioned on a large substrate.

[0004] Other aspects will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practice of the embodiments presented in this disclosure.

[0005] According to one aspect of this disclosure, a display transfer structure is provided, the display transfer structure comprising: a transfer substrate including a plurality of recesses, each of the plurality of recesses including a first trapping portion having a space in which an object can move and a second trapping portion connected to the first trapping portion and having a shape and size in which an object can be placed; and a micro-semiconductor chip located in the second trapping portion.

[0006] The size of the first trapping section can be set such that two or more micro-semiconductor chips cannot be fitted into each of the plurality of recesses.

[0007] The width of the second trapping section can be 105% or less of the width of the micro-semiconductor chip.

[0008] The second capturing section can overlap with the first capturing section by a certain length.

[0009] The second trapping section can be circular, and the specific length by which the second trapping section overlaps with the first trapping section can be greater than the radius of the second trapping section.

[0010] Each of the plurality of recesses may further include a third trapping section connected to the first trapping section or the second trapping section and having a smaller size than the second trapping section.

[0011] Each of the first, second, and third trapping sections may have a symmetrical shape, and the first, second, and third trapping sections may be arranged such that their centers of symmetry lie on a straight line.

[0012] Multiple third capture units can be provided.

[0013] The outer surface of the transfer substrate and the inner surface of each of the plurality of recesses can be surface treated to have different properties.

[0014] A metal coating can be formed on the outer surface of the transfer substrate.

[0015] The display transfer structure may also include a drive circuit configured to drive a micro-semiconductor chip.

[0016] The driving circuit can be located in the transfer substrate.

[0017] The display transfer structure may also include a circuit board located below the transfer substrate and including driving circuitry.

[0018] According to another aspect of this disclosure, a display device is provided, the display device comprising: a transfer substrate including a plurality of recesses, each of the plurality of recesses including a first trapping portion having a space in which an object can move and a second trapping portion connected to the first trapping portion and having a shape and size in which an object can be placed; a micro-semiconductor chip located in the second trapping portion; a driving circuit configured to drive the micro-semiconductor chip; and a color conversion layer located on the transfer substrate.

[0019] The driving circuit can be located in the transfer substrate.

[0020] The display device may also include a circuit board located below the transfer substrate and including driving circuitry.

[0021] The size of the first trapping section can be set such that two or more micro-semiconductor chips cannot be assembled in each of the plurality of recesses.

[0022] The width of the second trapping section can be 105% or less of the width of the micro-semiconductor chip.

[0023] The second capturing section can overlap with the first capturing section by a certain length.

[0024] The second trapping section can be circular, and the specific length by which the second trapping section overlaps with the first trapping section can be greater than the radius of the second trapping section.

[0025] Each of the plurality of recesses may further include a third trapping section connected to the first trapping section or the second trapping section and having a smaller size than the second trapping section.

[0026] Each of the first, second, and third trapping sections has a symmetrical shape, and the first, second, and third trapping sections can be arranged such that their centers of symmetry lie on a straight line.

[0027] According to another aspect of this disclosure, an electronic device including any of the above-described display devices is provided.

[0028] According to another aspect of this disclosure, a display transfer structure is provided, the display transfer structure comprising: a transfer substrate including a plurality of recesses, each recess including: a first region configured to receive a semiconductor chip in a movable state; a second region connected to the first region and configured to receive the semiconductor chip in a fixed manner; and a third region connected to the second region and having a size smaller than that of the second region.

[0029] According to another aspect of this disclosure, a method for manufacturing a semiconductor chip transfer structure is provided, the method comprising: supplying liquid to a plurality of recesses, each recess including a first region and a second region, the second region being connected to the first region and having a size smaller than the first region; providing a plurality of semiconductor chips on the semiconductor chip transfer structure; scanning an absorber over the plurality of recesses in a first direction to move one of the plurality of semiconductor chips to a first region of a first recess among the plurality of recesses; and scanning the absorber in a second direction different from the first direction to move the semiconductor chip to a second region of the first recess. Attached Figure Description

[0030] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0031] Figure 1 This is a perspective view showing a schematic structure of a display transfer structure according to an example embodiment;

[0032] Figure 2 yes Figure 1 Enlarged plan view of a portion of the area;

[0033] Figure 3 It is shown that it is provided in Figure 1 A plan view of the shape of the recess in the transfer substrate of the display transfer structure;

[0034] Figure 4 yes Figure 1 A portion of the area is shown in the cross-sectional view along A-A';

[0035] Figure 5 This illustrates the formation according to an example embodiment. Figure 1 A view showing the process of transferring the structure;

[0036] Figures 6A to 6C This demonstrates how to self-align a micro-semiconductor chip. Figure 5 The process of determining the location of the recess in the transfer substrate shown;

[0037] Figures 7A to 7E It can be shown that Figure 1 Examples of miniature semiconductor chips with various shapes of recesses used in the display transfer structure and the correct positions of the recesses.

[0038] Figure 8 This is a cross-sectional view showing the arrangement of micro-semiconductor chips in a display transfer structure according to a comparative example;

[0039] Figure 9 This is a cross-sectional view showing a schematic structure of the display transfer structure according to another exemplary embodiment;

[0040] Figure 10 This illustrates the transfer of a micro-semiconductor chip, provided in a display transfer structure according to an example embodiment, to a TFT substrate;

[0041] Figure 11 This is a cross-sectional view showing a schematic structure of the display transfer structure according to another exemplary embodiment;

[0042] Figure 12 This is a cross-sectional view showing a schematic structure of the display transfer structure according to another exemplary embodiment;

[0043] Figure 13 This is a cross-sectional view showing a schematic structure of the display transfer structure according to another exemplary embodiment;

[0044] Figure 14 This is a cross-sectional view showing a schematic structure of a display device according to an example embodiment; and

[0045] Figure 15 This is a schematic block diagram of an electronic device according to an example embodiment. Detailed Implementation

[0046] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this respect, exemplary embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, only exemplary embodiments are described below with reference to the accompanying drawings to explain various aspects. When used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of…”, when following a list of elements, modify the entire list of elements rather than individual elements in that list.

[0047] In the following, exemplary embodiments will be described in detail with reference to the accompanying drawings. The described embodiments are merely examples, and various modifications can be made from these embodiments. The same reference numerals in the drawings denote the same elements, and the dimensions of the elements may be exaggerated in the drawings for clarity and convenience of explanation.

[0048] In the following text, when describing a component as being "above" or "on top of" another component, the component may be directly on top of the other component, or a third component may be inserted between them.

[0049] Although terms such as "first" and "second" can be used to describe various components, the components are not limited by these terms. These terms can be used to classify one component with another exemplary component. These terms are not intended to limit differences in component materials or structures.

[0050] Singular expressions include plural expressions unless they are clearly different from each other in the context. Furthermore, when a part “includes” a component, it means that the part may also include another component rather than exclude it, unless there are different public disclosures.

[0051] Furthermore, terms such as “unit” or “module” disclosed in the specification refer to a unit that performs at least one function or operation, which can be implemented by hardware, software or a combination thereof.

[0052] The term “the” and similar denotative terms can refer to both the singular and the plural.

[0053] The steps constituting the method may be performed in any suitable order unless expressly stated that the steps in the method should be performed in the described order. Furthermore, all exemplary terms (e.g., etc.) are used only to describe the technical idea in detail, and the scope of this disclosure is not limited by these terms except as limited by the claims.

[0054] Figure 1 This is a perspective view showing a schematic structure of the display transfer structure 100 according to an example embodiment. Figure 2 yes Figure 1 Enlarged plan view of a portion of the area. Figure 3 It is shown that it is provided in Figure 1 A plan view of the shape of the recess 150 in the transfer substrate 120 of the display transfer structure 100.

[0055] The display transfer structure 100 includes a transfer substrate 120 having a plurality of recesses 150. According to one example embodiment, the transfer substrate 120 may have a micro-semiconductor chip 140 in each recess 150. For example... Figure 1 and Figure 2As shown, the micro-semiconductor chip 140 is arranged at a specific position in each recess 150 with small or no positional error.

[0056] The micro-semiconductor chip 140 may include various types of semiconductor chips with micro-sizes, and the micro-sizes may be 1000 μm or smaller, 200 μm or smaller, 100 μm or smaller, or 50 μm or smaller. The micro-semiconductor chip 140 may include, for example, light-emitting diodes (LEDs), complementary metal-oxide-semiconductor (CMOS), CMOS image sensors (CIS), vertical-cavity surface-emitting lasers (VCSELs), photodiodes (PDs), memory devices, two-dimensional (2D) material devices, etc. 2D materials may include graphene or carbon nanotubes (CNTs). In the following description, the micro-semiconductor chip 140 may be described as an LED chip, but is not limited thereto.

[0057] The transfer substrate 120 for arranging the micro-semiconductor chip 140 in a fluid self-alignment (FSA) manner includes a recess 150 for aligning the micro-semiconductor chip 140.

[0058] like Figure 2 and Figure 3 As shown, each recess 150 includes a first trapping section 151 having a space in which a specific object can move, and a second trapping section 152 connected to the first trapping section 151 and having a shape and size in which an object can be placed. Furthermore, each of the plurality of recesses 150 may also include a third trapping section 153 connected to the second trapping section 152 and having a smaller size than the second trapping section 152. The third trapping section 153 can serve as an impurity space. When the micro-semiconductor chip 140 is fluidly aligned in the second trapping section 152, impurities in the suspension including the micro-semiconductor chip 140 can be introduced into the third trapping section 153, thus allowing the micro-semiconductor chip 140 to be properly aligned in the second trapping section 152. The third trapping section 153 is smaller in size than the second trapping section 152 and is not limited in shape. Multiple third trapping sections 153 may be provided or may be omitted. In the following embodiment, the recess 150 is shown as including a first trapping portion 151, a second trapping portion 152, and a third trapping portion 153, but is not limited thereto; the recess 150 may include only the first trapping portion 151 and the second trapping portion 152. Although elements 151, 152, and 153 are referred to as trapping portions, according to another example embodiment, elements 151, 152, and 153 may be referred to as regions (i.e., a first region, a second region, or a third region) or portions (i.e., a first portion, a second portion, or a third portion).

[0059] The first trapping section 151 is sized to correspond to the space in which the micro-semiconductor chip 140 can move. That is, the size of the first trapping section 151 allows the micro-semiconductor chip 140 to move within a region inside the first trapping section 151. Furthermore, the first trapping section 151 can be sized such that one micro-semiconductor chip 140 is within a recess 150. In other words, the size of the first trapping section 151 can be set such that two or more micro-semiconductor chips 140 cannot be fitted into the recess 150. Figure 3 As shown, the first trapping portion 151 may partially overlap with the second trapping portion 152 having a circular radius R2. The first trapping portion 151 may have a circular shape with a radius R1 that is partially cut off. The circular radius R2 of the second trapping portion 152 may be set such that any width of the area of ​​the second trapping portion 152 other than the portion that overlaps with the first trapping portion 151 is smaller than the width of the micro-semiconductor chip 140.

[0060] The second trapping portion 152 has a shape and size corresponding to the micro-semiconductor chip 140. In other words, the second trapping portion 152 has a shape and size in which the micro-semiconductor chip 140 can be disposed. According to an example embodiment, the second trapping portion 152 has a shape and size in which the micro-semiconductor chip 140 can be fixedly positioned, such that the micro-semiconductor chip 140 is immovable within a region inside the second trapping portion 152. For example, at least a portion of the second trapping portion 152 has a shape and size that conforms to (or matches) the shape and size of the micro-semiconductor chip 140. Therefore, at least a portion of the micro-semiconductor chip 140 can be disposed inside the second trapping portion 152 in a fixed or fitted manner. When the micro-semiconductor chip 140 is circular, the second trapping portion 152 can also be circular, or it can have a shape such as an ellipse or polygon in which the circular micro-semiconductor chip 140 can be assembled. When the micro semiconductor chip 140 has a quadrilateral shape, the second collecting part 152 may also have a quadrilateral shape, or may have a circular, elliptical or other polygonal shape (the quadrilateral micro semiconductor chip 140 may be assembled therein).

[0061] like Figure 3As shown, the first trapping section 151 can overlap with the second trapping section 152 by a specific length. The overlap length OV is the length of the area where the first trapping section 151 and the second trapping section 152 overlap in the direction (Y direction) in which the first trapping section 151 and the second trapping section 152 are arranged. When the second trapping section 152 is circular, the overlap length OV between the second trapping section 152 and the first trapping section 151 is greater than the radius R2 of the second trapping section 152. Therefore, the width W of one end of the first trapping section 151 (which is the outlet of the first trapping section 151) can be ensured to be within a certain range, allowing the micro-semiconductor chip 140 to move from the first trapping section 151 toward the second trapping section 152 and then be placed in the second trapping section 152.

[0062] The second trapping section 152 has dimensions in which the micro-semiconductor chip 140 can be placed, and may have substantially the same dimensions as the micro-semiconductor chip 140. For example, the width of the second trapping section 152 may be 100% or more, 105% or less, 103% or less, or 101% or less of the width of the micro-semiconductor chip 140.

[0063] Each of the first trapping section 151, the second trapping section 152, and the third trapping section 153 may have a symmetrical shape, and the first trapping section 151, the second trapping section 152, and the third trapping section 153 may be positioned such that their centers of symmetry lie on a straight line.

[0064] Reference Figure 1 In order to enable the micro-semiconductor chip 140 to be fluidly self-aligned in the recess 150, the outer surface 120a of the transfer substrate 120 and the inner bottom surface 120b of the recess 150 can be surface-treated to have different properties. The outer surface 120a of the transfer substrate 120 can be surface-treated to be hydrophobic, and the inner bottom surface 120b of the recess 150 can be surface-treated to be hydrophilic.

[0065] Figure 4 yes Figure 1 A portion of the area is shown in the cross-sectional view along A-A'.

[0066] The micro-semiconductor chip 140 is in the second trapping portion 152 in each recess 150 formed in the transfer substrate 120.

[0067] Referring to the exemplary structure of the micro-semiconductor chip 140, the micro-semiconductor chip 140 may include an n-type semiconductor layer 145, an active layer 146, and a p-type semiconductor layer 147. The n-type semiconductor layer 145 may include n-type GaN, and the p-type semiconductor layer 147 may include p-type GaN, but the n-type semiconductor layer 145 and the p-type semiconductor layer 147 are not limited thereto. The active layer 146 may have, for example, a quantum well structure or a multiple quantum well structure. A first electrode 148 and a second electrode 149 are located in the upper portion of the micro-semiconductor chip 140. The first electrode 148 is electrically connected to the n-type semiconductor layer 145, and the second electrode 149 is electrically connected to the p-type semiconductor layer 147. The shape of the micro-semiconductor chip 140 is exemplary and not limited thereto.

[0068] Figure 5 It schematically shows the formation Figure 1 A diagram showing the process of transferring structure 100. Figures 6A to 6C yes Figure 5 The enlarged view of a portion of the area shows the process of the micro-semiconductor chip 140 being self-aligned at a specific location in the recess 150 of the transfer substrate 120.

[0069] Figure 5 The diagram shows a state in which a micro-semiconductor chip 140 is supplied on a transfer substrate 120 having a recess 150 having the shape described above. The micro-semiconductor chip 140 may be directly sprayed onto the transfer substrate 120 after a certain liquid is supplied to the recess 150 of the transfer substrate 120, or it may be included in a certain suspension and supplied to the transfer substrate 120.

[0070] The liquid supplied to the recess 150 can be any type of liquid, as long as it does not corrode or damage the micro-semiconductor chip 140, and various methods such as spraying, dispensing, inkjet printing, and transferring the liquid to the substrate 120 can be used. The liquid may include, for example, one selected from the group consisting of water, ethanol, alcohol, polyols, ketones, halogenated hydrocarbons, acetone, flux, and organic solvents, or any combination thereof. Organic solvents may include, for example, isopropanol (IPA).

[0071] The micro-semiconductor chip 140 can be directly sprayed onto the transfer substrate 120 without any other liquid, or it can be included in a suspension and supplied onto the transfer substrate 120. As a method of supplying the micro-semiconductor chip 140 included in the suspension, various methods can be used, such as spraying, drop coating in which liquid is dripped in the form of droplets, inkjet spraying in which liquid is ejected like a printing method, and methods of applying the suspension onto the transfer substrate 120.

[0072] The absorber 80 can scan the transfer substrate 120. As the absorber 80 passes over the recess 150, it contacts the transfer substrate 120, moving the micro-semiconductor chip 140 into the recess 150 and absorbing any liquid present in the recess 150. The absorber 80 can be made of any material, as long as it is capable of absorbing liquid, and is not limited in shape or structure. The absorber 80 can include, for example, fabric, tissue, polyester fiber, paper, or a wiper. The absorber 80 can be used alone without other auxiliary devices, but is not limited thereto, and can be coupled to the support 70 to facilitate scanning the transfer substrate 120. The support 70 can have various shapes and structures suitable for scanning the transfer substrate 120. The support 70 can have shapes such as, for example, rods, blades, plates, or wipers. The absorber 80 can be provided on either side of the support 70 or can wrap around the support 70. The shapes of the support 70 and the absorber 80 are not limited to the quadrilateral cross-sectional shape shown, and can also be circular cross-sectional shapes.

[0073] The absorber 80 can scan the transfer substrate 120 while pressing it with appropriate pressure. Scanning can be performed using various methods, such as sliding, rotating, translating, reciprocating, rolling, spinning, and / or friction of the absorber 80, which can include regular or irregular methods. Scanning can be performed by moving the transfer substrate 120 instead of the absorber 80, and scanning of the transfer substrate 120 can also be performed using methods such as sliding, rotating, translating, reciprocating, rolling, spinning, and / or friction. Scanning can also be performed through cooperation between the absorber 80 and the transfer substrate 120.

[0074] like Figure 6A One of the two micro-semiconductor chips 140 adjacent to the recess 150 shown is, for example... Figure 6B The first trapping section 151 enters the recess 150 according to a scan in direction A1. The first trapping section 151 has a space in which a micro-semiconductor chip 140 can move according to fluid flow, and the position of the micro-semiconductor chip 140 in the first trapping section 151 is not fixed. Next, as... Figure 6C As shown, the micro semiconductor chip 140 moves to the second trapping section 152 according to the scan in direction A2. The second trapping section 152 has a narrower width than the first trapping section 151 and is the space in which the micro semiconductor chip 140 is aligned.

[0075] After the absorber 80 scans the transfer substrate 120, the dummy micro-semiconductor chips that remain on the transfer substrate 120 but have not entered the recess 150 are removed. After the micro-semiconductor chip 140 is placed in the second trapping section 152, the placed micro-semiconductor chip 140 can be pre-bonded to the transfer substrate 120 using, for example, a pre-bonding agent.

[0076] In the above description, the micro semiconductor chip 140 has a circular cross-section, and the first trapping section 151, the second trapping section 152 and the third trapping section 153 have circular-based shapes, but these shapes can be changed to different shapes.

[0077] Figures 7A to 7E It can be shown that Figure 1 Examples of various shapes of recesses used in the display transfer structure and miniature semiconductor chips located in the correct positions within the recesses.

[0078] according to Figure 7A In the illustrated embodiment, the recess 250 may include a first trapping portion 251, a second trapping portion 252, and a third trapping portion 253. The second trapping portion 252 is circular, and the first trapping portion 251 has a [missing information - likely a specific feature or characteristic]. Figure 3 One end of the first capturing section 151 shown is deformed into a rectangular shape.

[0079] according to Figure 7B In the illustrated embodiment, the recess 350 may include a first trapping portion 351, a second trapping portion 352, and a third trapping portion 353. Each of the first trapping portion 351, the second trapping portion 352, and the third trapping portion 353 of the recess 350 may have a quadrilateral shape, and a circular micro-semiconductor chip 140 may be located in the second trapping portion 352.

[0080] according to Figure 7C In the example embodiment shown, each of the first trapping portion 451, the second trapping portion 452, and the third trapping portion 453 of the recess 450 may have a quadrilateral shape, and the quadrilateral micro-semiconductor chip 141 may be located in the second trapping portion 452.

[0081] according to Figure 7D In the illustrated example embodiment, each of the first trapping portion 551, the second trapping portion 552, and the third trapping portion 553 of the recess 550 may have a quadrilateral shape, and multiple third trapping portions 553 may be provided. Some of these multiple third trapping portions 553 may have different sizes.

[0082] according to Figure 7EIn the illustrated example embodiment, each of the first trapping portion 651, the second trapping portion 652, and the third trapping portion 653 of the recess 650 may have a circular shape, and multiple third trapping portions 653 may be provided. These multiple third trapping portions 653 are shown to have the same size, but are not limited thereto; some of the third trapping portions 653 may have different sizes.

[0083] Figure 8 This is a cross-sectional view showing the arrangement of the micro-semiconductor chip 14 in the display transfer structure according to the comparative example.

[0084] exist Figure 8 In this embodiment, a recess 15 is provided in the transfer substrate 12 to provide space for the micro-semiconductor chip 14 to be placed therein, and has a size larger than the micro-semiconductor chip 14 so that the micro-semiconductor chip 14 is well assembled into the recess 15. When the micro-semiconductor chip 14 is wet aligned using the transfer substrate 12, the micro-semiconductor chip 14 is aligned with a certain degree of error in the space within the recess 15.

[0085] In contrast, in the display transfer structure 100 according to one embodiment, the micro-semiconductor chip 140 is disposed in a second trapping portion 152 in a region within a recess 150, the second trapping portion 152 having a size substantially the same as that of the micro-semiconductor chip 140, thus reducing alignment errors.

[0086] Figure 9 This is a cross-sectional view showing a schematic structure of the display transfer structure 101 according to another exemplary embodiment.

[0087] Figure 9 The example implementation of the display transfer structure 101 and Figure 1 The difference between the display transfer structure 100 and the one shown is that a metal layer 160 is provided on the outer surface of the transfer substrate 120, while the other components are essentially the same.

[0088] The metal layer 160 may include Ag, Au, Pt, Ni, Cr, and / or Al, and may have a surface energy different from that of the transfer substrate 120. A polymer may be bonded to the metal layer 160. This difference in surface energy not only allows the micro-semiconductor chip 140 to be properly transferred to the recess 150, but also allows for easy separation of any micro-semiconductor chips 140 retained but not transferred to the recess 150 from the transfer substrate 120 during cleaning operations. The materials of the metal layer 160 and the transfer substrate 120 may be selected such that the metal layer 160 is hydrophobic and the recess 150 is hydrophilic to have a large difference in surface energy.

[0089] The aforementioned display transfer structures 100 and 101 can be used as display devices utilizing micro-semiconductor chips 140. The plurality of micro-semiconductor chips 140 provided in the aforementioned display transfer structures 100 and 101 may include a plurality of LED chips emitting red (R), green (G), and blue (B) light, or may include only a plurality of LED chips emitting blue (B) light. The display transfer structures 100 and 101 can be applied to display devices in which the micro-semiconductor chips 140 operate as independent pixels, such as RGB self-emissive micro-LED TVs. In this case, the display transfer structures 100 and 101 can be used as a whole as a display device, or the micro-semiconductor chips 140 provided in the display transfer structures 100 and 101 can be transferred to be bonded (eutectic bonded) to a thin-film transistor (TFT) substrate.

[0090] Figure 10 This illustrates the transfer of a micro-semiconductor chip 140 provided in a display transfer structure 100 according to an example embodiment to a TFT substrate TS.

[0091] As shown, the display transfer structure 100 can be used as a transfer mold to transfer a micro-semiconductor chip 140 to another location. The micro-semiconductor chip 140 can be bonded and transferred onto a TFT substrate TS, which includes driving circuitry such as TFTs for driving the micro-semiconductor chip 140. Since a predetermined position of the micro-semiconductor chip 140 in the recess 150 of the transfer substrate 120 is aligned in the second trapping portion 152, the micro-semiconductor chip 140 can be properly transferred to a predetermined position on the TFT substrate TS. After the micro-semiconductor chip 140 is bonded and transferred onto the TFT substrate TS, the display device can be completed through additional processes. By utilizing the display transfer structure 100 according to the embodiment, the manufacturing yield of the display device can be improved.

[0092] The display transfer structure 100 can be directly used as a display device. Figures 11 to 13 A display transfer structure including additional structures is shown, which can be directly applied to a display device.

[0093] Figure 11 This is a cross-sectional view showing a schematic structure of the display transfer structure 102 according to another exemplary embodiment.

[0094] Figure 11 The example embodiment of the display transfer structure 102 has an additional material layer further provided in Figure 1 The form of the display transfer structure 100.

[0095] The display transfer structure 102 may further include an insulating layer 170 formed in the recess 150 and circuit elements 181 and 182 respectively connected to a first electrode 148 and a second electrode 149 of the micro-semiconductor chip 140. The circuit elements 181 and 182 may form part of a driving circuit for driving the micro-semiconductor chip 140.

[0096] Figure 12 This is a cross-sectional view showing a schematic structure of the display transfer structure 103 according to another exemplary embodiment.

[0097] Figure 12 The difference between the example embodiment of the display transfer structure 103 and the display transfer structure 102 described above is that a circuit board 123 having a driving circuit for driving the micro-semiconductor chip 140 is used as a transfer substrate. The circuit board 123 may include circuit elements including a driving transistor, a switching transistor, and a capacitor. After a recess 150 having a first trapping portion 151, a second trapping portion 152, and a third trapping portion 153 for aligning the micro-semiconductor chip 140 in the correct position is directly formed in the circuit board 123, the micro-semiconductor chip 140 is aligned in the second trapping portion 152 using a wet alignment method. Therefore, additional processes are minimized, and the display transfer structure 103 can be used as a display device.

[0098] Figure 13 This is a cross-sectional view showing a schematic structure of the display transfer structure 104 according to another exemplary embodiment.

[0099] Figure 13 The example embodiment of the display transfer structure 104 includes a circuit board 125 beneath a transfer substrate 124. The circuit board 125 may include circuit elements, including drive transistors, switch transistors, and capacitors, which are electrically connected to a micro-semiconductor chip 140 via conductive paths 190 penetrating the transfer substrate 124.

[0100] Figure 14 This is a cross-sectional view showing a schematic structure of a display device 1000 according to an example embodiment.

[0101] The display device 1000 includes a display transfer structure 104 and a color conversion layer 1100 located on the display transfer structure 104, wherein a plurality of micro-semiconductor chips 140 are respectively located in the second trapping portions 152 of a plurality of recesses 150 in the display transfer structure 104.

[0102] Figure 13 The display transfer structure 104 is shown, but is not limited thereto; the display transfer structure 104 can be modified to... Figure 11 Display transfer structure 102, Figure 12The display transfer structure 103, or its variants.

[0103] A passivation layer 1005, including insulating material, may be located on the display transfer structure 104, and a color conversion layer 1100 may be located on the passivation layer 1005.

[0104] The color conversion layer 1100 may include a first color conversion layer 1100B that converts light from the micro-semiconductor chip 140 into a first color light, a second color conversion layer 1100G that converts light into a second color light, and a third color conversion layer 1100R that converts light into a third color light. The first color light may be, for example, blue light, the second color light may be, for example, green light, and the third color light may be, for example, red light. The first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 1100R are spaced apart from each other such that a partition wall 1110 is located between them, and each faces the micro-semiconductor chip 140.

[0105] When the micro-semiconductor chip 140 emits blue light, the first color conversion layer 1100B may include a resin through which blue light is transmitted. The second color conversion layer 1100G may convert the blue light emitted from the micro-semiconductor chip 140 into green light to emit green light. The second color conversion layer 1100G may include quantum dots (QDs) or phosphors that are excited by the blue light emitted from the micro-semiconductor chip 140 to emit green light. The third color conversion layer 1100R may convert the blue light emitted from the micro-semiconductor chip 140 into red light to emit red light. The third color conversion layer 1100R may include QDs or phosphors that are excited by the blue light emitted from the micro-semiconductor chip 140 to emit red light.

[0106] The quantum dots included in the second color conversion layer 1100G and the third color conversion layer 1100R can have a core-shell structure with a core portion and a shell portion, or they can have a particle structure without a shell. The core-shell structure can include a single-shell structure or a multi-shell structure (e.g., a double-shell structure). The quantum dots can include group II-VI series semiconductors, group III-V series semiconductors, group IV-VI series semiconductors, group IV series semiconductors and / or graphene quantum dots. The quantum dots can include, for example, Cd, Se, Zn, S and / or InP, and each quantum dot can have a diameter of tens of nm or smaller, for example, about 10 nm or smaller. The quantum dots included in the second color conversion layer 1100G and the third color conversion layer 1100R can have different sizes.

[0107] A capping layer 1200 may be located on the color conversion layer 1100, and a color filter layer 1300 may be located on the capping layer 1200. The color filter layer 1300 includes a first filter 1300B, a second filter 1300G, and a third filter 1300R, spaced apart so that a black matrix 1310 is positioned between them. The first filter 1300B, the second filter 1300G, and the third filter 1300R are arranged to face the first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 1100R, respectively. The first filter 1300B, the second filter 1300G, and the third filter 1300R allow blue, green, and red light to pass through them, respectively, and absorb other colors of light. The color filter layer 1300 may be omitted. When a color filter layer 1300 is provided, light emitted without color conversion in the second color conversion layer 1100G (i.e., light other than green light) or light emitted without color conversion in the third color conversion layer 1100R (i.e., light other than red light) can be filtered by the second filter 1300G and the third filter 1300R respectively, thereby improving color purity.

[0108] The protective substrate 1400, which includes a transparent material, may be located on the color filter layer 1300 or on the color conversion layer 1100 (when the color filter layer 1300 is omitted).

[0109] Figure 15 This is a schematic block diagram of an electronic device 8201 according to one embodiment.

[0110] Reference Figure 15 Electronic device 8201 can be provided in network environment 8200. In network environment 8200, electronic device 8201 can communicate with another electronic device 8202 through a first network 8298 (short-range wireless communication network, etc.), or can communicate with another electronic device 8204 and / or server 8208 through a second network 8299 (long-range wireless communication network, etc.). Electronic device 8201 can communicate with electronic device 8204 through server 8208. Electronic device 8201 may include processor 8220, memory 8230, input device 8250, audio output device 8255, display device 8260, audio module 8270, sensor module 8276, interface 8277, haptic module 8279, camera module 8280, power management module 8288, battery 8289, communication module 8290, user identification module 8296, and / or antenna module 8297. Some of these components of electronic device 8201 may be omitted or other components may be added to electronic device 8201. Some of these components can be implemented as a single integrated circuit. For example, a sensor module 8276 (fingerprint sensor, iris sensor, illuminance sensor, etc.) can be included in a display device 8260 (display, etc.).

[0111] Processor 8220 can execute software (program 8240, etc.) to control one or more other components (hardware, software components, etc.) connected to processor 8220 in electronic device 8201 and perform various data processing or operations. As part of the data processing or operation, processor 8220 can load instructions and / or data received from other components (sensor module 8276, communication module 8290, etc.) into volatile memory 8232, process the instructions and / or data stored in volatile memory 8232, and store the result data in non-volatile memory 8234. Processor 8220 may include a main processor 8221 (central processing unit, application processor, etc.) and an auxiliary processor 8223 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.), which can operate independently or in conjunction with the main processor 8221. Auxiliary processor 8223 can use less power than the main processor 8221 and can perform specialized functions.

[0112] The auxiliary processor 8223 can, when the main processor 8221 is inactive (sleep state), take over the control of some functions and / or states related to components of the electronic device 8201 (display device 8260, sensor module 8276, communication module 8290, etc.), or, when the main processor 8221 is active (application execution state), control, together with the main processor 8221, some functions and / or states related to components of the electronic device 8201 (display device 8260, sensor module 8276, communication module 8290, etc.). The auxiliary processor 8223 (image signal processor, communication processor, etc.) can be implemented as part of other functionally related components (camera module 8280, communication module 8290, etc.).

[0113] The memory 8230 can store various data required by components of the electronic device 8201 (processor 8220, sensor module 8276, etc.). This data may include, for example, software (program 8240, etc.) and input and / or output data for commands associated with it. The memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234.

[0114] The program 8240 can be stored as software in the memory 8230 and may include an operating system 8242, middleware 8244 and / or application 8246.

[0115] Input device 8250 can receive commands and / or data from outside the electronic device 8201 (such as from a user) for use by components (such as the processor 8220 of the electronic device 8201). Input device 8250 may include a remote control, microphone, mouse, keyboard, and / or digital pen (such as a stylus).

[0116] Audio output device 8255 can output audio signals to the outside of electronic device 8201. Audio output device 8255 may include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback, and the receiver can be used to receive incoming calls. The receiver can be integrated into the speaker or can be implemented as a separate device.

[0117] Display device 8260 can visually provide information to the outside of electronic device 8201. Display device 8260 may include a display, holographic device, or projector, and control circuitry for controlling the corresponding device. Display device 8260 may be as described above. Figure 14 The described display device 1000, or may include... Figure 1 , Figure 9 , Figures 11 to 13 The display device with the shown display transfer structure. The display device 8260 may include a touch circuit configured to detect touch and / or a sensor circuit (pressure sensor, etc.) configured to measure the intensity of the force generated by the touch.

[0118] Audio module 8270 can convert sound into electrical signals, or conversely, can convert electrical signals into sound. Audio module 8270 can acquire sound through input device 8250 and output sound through speakers and / or headphones of another electronic device (electronic device 8202, etc.) directly or wirelessly connected to audio output device 8255 and / or electronic device 8201.

[0119] Sensor module 8276 can detect the operating status (power, temperature, etc.) or external environmental status (user status, etc.) of electronic device 8201, and generate electrical signals and / or data values ​​corresponding to the detected status. Sensor module 8276 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0120] Interface 8277 may support one or more specified protocols that can be used to connect electronic device 8201 directly or wirelessly to another electronic device (e.g., electronic device 8202). Interface 8277 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and / or an audio interface.

[0121] Connection end 8278 may include a connector through which electronic device 8201 can be physically connected to another electronic device (such as electronic device 8202). Connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0122] The haptic module 8279 can convert electrical signals into mechanical stimuli (vibration, motion, etc.) or electrical stimuli that can be perceived by the user through touch or kinesthesia. The haptic module 8279 may include electrodes, piezoelectric elements, and / or electrical stimulation devices.

[0123] Camera module 8280 can capture still images and video. Camera module 8280 may include a lens assembly comprising one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in camera module 8280 can collect light emitted from the object to be imaged.

[0124] The power management module 8288 can manage the power supplied to the electronic device 8201. The power management module 8288 can be implemented as part of a power management integrated circuit (PMIC).

[0125] Battery 8289 can supply power to components of electronic device 8201. Battery 8289 may include non-rechargeable primary batteries, rechargeable secondary batteries, and / or fuel cells.

[0126] Communication module 8290 can establish direct (wired) communication channels and / or wireless communication channels between electronic device 8201 and other electronic devices (electronic device 8202, electronic device 8204, server 8208, etc.), and support communication through the established communication channels. Communication module 8290 may include one or more communication processors that operate independently of processor 8220 (application processor, etc.) and support direct and / or wireless communication. Communication module 8290 may include wireless communication module 8292 (cellular communication module, short-range wireless communication module, Global Navigation Satellite System (GNSS) communication module, etc.) and / or wired communication module 8294 (local area network (LAN) communication module, power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with another electronic device through a first network 8298 (such as a short-range communication network like Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network 8299 (such as a long-range communication network like a cellular network, the Internet, or a computer network (LAN), WAN, etc.). These various types of communication modules can be integrated into a single component (a single chip, etc.) or implemented as multiple components (multiple chips) that are separate from each other. The wireless communication module 8292 can use user information (International Mobile Subscriber Identity (IMSI) etc.) stored in the user identification module 8296 to identify and verify electronic devices 8201 in communication networks (such as the first network 8298 and / or the second network 8299).

[0127] Antenna module 8297 can transmit signals and / or power to or from external devices (such as other electronic devices). The antenna may include a radiator comprising a conductive pattern formed on a board (printed circuit board (PCB), etc.). Antenna module 8297 may include one or more antennas. When multiple antennas are included, the communication module 8290 may select from the multiple antennas an antenna suitable for use in a communication network such as a first network 8298 and / or a second network 8299. Signals and / or power can be transmitted or received between communication module 8290 and other electronic devices via the selected antenna. Components other than antennas (RFIC, etc.) may be included as part of antenna module 8297.

[0128] Some of the components can be connected to each other and exchange signals (commands, data, etc.) via communication methods (bus, general purpose input and output (BPIO), serial peripheral interface (SPI), mobile industrial processor interface (MIPI)).

[0129] Commands or data can be sent or received between electronic devices 8201 and 8204 via server 8208 connected to the second network 8299. Other electronic devices 8202 and 8204 can be the same as or different types of devices than electronic device 8201. All or some of the operations performed by electronic device 8201 can be performed by one or more of the other electronic devices 8202, 8204, and 8208. For example, when electronic device 8201 needs to perform a function or service, it can request one or more other electronic devices to perform part or all of the function or service, instead of performing it itself. Upon receiving the request, one or more other electronic devices can perform additional functions or services related to the request and send the execution result to electronic device 8201. For this purpose, cloud computing technology, distributed computing technology, and / or client-server computing technology can be used.

[0130] Furthermore, the display device according to one embodiment can also be applied to various products, such as mobile devices, automobiles, head-up displays, augmented / virtual reality devices, large signage, wearable displays, rollable TVs, stretchable displays, etc.

[0131] The aforementioned display transfer structure includes multiple recesses with shapes that facilitate self-alignment of micro-semiconductor chips, allowing multiple micro-semiconductor chips to be properly aligned in the correct positions over a large area.

[0132] Various types of display devices (such as large display devices) can be easily implemented using the above-described display transfer structure.

[0133] It should be understood that the exemplary embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The descriptions of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other exemplary embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

[0134] This application claims the benefit of U.S. Provisional Application No. 63 / 125597, filed December 15, 2020, with the United States Patent and Trademark Office, and claims priority to it based on Korean Patent Application No. 10-2021-0038971, filed March 25, 2021, with the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in their entirety.

Claims

1. A display transfer structure, comprising: A transfer substrate includes a plurality of recesses, each of the plurality of recesses including a first trapping portion having a space therein in which an object can move, and a second trapping portion connected to the first trapping portion and having a shape and size in which the object can be placed; and A miniature semiconductor chip is located in the second trapping section. Each of the plurality of recesses further includes a plurality of third trapping portions connected to the first trapping portion or the second trapping portion, the third trapping portions having a smaller size than the second trapping portion, and a portion of the plurality of third trapping portions being connected to the first trapping portion.

2. The display transfer structure as described in claim 1, The size of the first trapping section is such that two or more micro-semiconductor chips cannot be assembled into each of the plurality of recesses.

3. The display transfer structure as described in claim 1, The width of the second trapping section is 105% or less of the width of the micro-semiconductor chip.

4. The display transfer structure as described in claim 1, The second trapping section overlaps the first trapping section by a specific length.

5. The display transfer structure as described in claim 4, The second trapping section is circular, and the specific length by which the second trapping section overlaps with the first trapping section is greater than the radius of the second trapping section.

6. The display transfer structure as described in claim 4, The at least one of the third trapping sections, the first trapping section, and the second trapping section each have a symmetrical shape, and the at least one of the third trapping sections, the first trapping section, and the second trapping section are arranged such that their centers of symmetry lie on a straight line.

7. The display transfer structure as described in claim 1, The outer surface of the transfer substrate and the inner surface of each of the plurality of recesses are surface treated to have different properties.

8. The display transfer structure as described in claim 1, The metal coating is formed on the outer surface of the transfer substrate.

9. The display transfer structure of claim 1, further comprising a driving circuit configured to drive the micro semiconductor chip.

10. The display transfer structure as described in claim 9, The driving circuit is located in the transfer substrate.

11. The display transfer structure of claim 9, further comprising a circuit board located below the transfer substrate and including the driving circuit.

12. A display device, comprising: A transfer substrate includes a plurality of recesses, each of the plurality of recesses including a first trapping portion having a space in which an object can move and a second trapping portion connected to the first trapping portion and having a shape and size in which the object can be placed; A miniature semiconductor chip is located in the second trapping section; A driving circuit is configured to drive the micro semiconductor chip; as well as A color conversion layer is located on the transfer substrate. Each of the plurality of recesses further includes a plurality of third trapping portions connected to the first trapping portion or the second trapping portion, the third trapping portions having a smaller size than the second trapping portion, and a portion of the plurality of third trapping portions being connected to the first trapping portion.

13. The display device as claimed in claim 12, The driving circuit is located in the transfer substrate.

14. The display device of claim 12, further comprising a circuit board located below the transfer substrate and including the driving circuit.

15. The display device as claimed in claim 12, The size of the first trapping section is such that two or more micro-semiconductor chips cannot be assembled into each of the plurality of recesses.

16. The display device as claimed in claim 12, The width of the second trapping section is 105% or less of the width of the micro-semiconductor chip.

17. The display device as claimed in claim 12, The second trapping section overlaps the first trapping section by a specific length.

18. The display device as claimed in claim 17, The second trapping section is circular, and the specific length by which the second trapping section overlaps with the first trapping section is greater than the radius of the second trapping section.

19. The display device as claimed in claim 12, The at least one of the third trapping sections, the first trapping section, and the second trapping section each have a symmetrical shape, and the at least one of the third trapping sections, the first trapping section, and the second trapping section are arranged such that their centers of symmetry lie on a straight line.

20. An electronic device comprising a display device as described in any one of claims 12 to 19.

Images