Processing condition determination method, substrate processing method, substrate product manufacturing method, computer program, storage medium, processing condition determination device, and substrate processing device

Abstract

In the processing condition determination method of the present application, processing recipe information usable when a substrate W is processed while moving a position of ejection of a processing liquid is determined from among a plurality of processing recipe information. The processing condition determination method includes a step S31, a step S32, and a step S33. In the step S31, for each of the plurality of processing recipe information, prediction thickness information including a predicted value of a thickness of the substrate W after processing is calculated based on measurement thickness information including a measured value of a thickness of the substrate W. In the step S32, the plurality of prediction thickness information calculated for the plurality of processing recipe information, respectively, is evaluated in accordance with a prescribed evaluation method, and prediction thickness information is selected from among the plurality of prediction thickness information. In the step S33, processing recipe information corresponding to the selected prediction thickness information is determined. The measured value included in the measurement thickness information indicates a thickness of the substrate W measured before processing of the substrate W.

Description

TECHNICAL FIELD

[0001] The present application relates to a processing condition determination method, a substrate processing method, a substrate product manufacturing method, a computer program, a storage medium, a processing condition determination device, and a substrate processing device. BACKGROUND

[0002] The substrate processing device described in Patent Literature 1 has an arm body having a nozzle body and a control device. The control device controls the moving speed of the arm body in such a manner that the moving speed of the arm body is gradually increased when the nozzle body moves from the peripheral portion of the substrate toward the central portion, and the moving speed is gradually decreased when the nozzle body moves from the central portion toward the peripheral portion. Therefore, it is possible to supply more processing liquid to the peripheral portion of the substrate than to the central portion. As a result, it is possible to make the processing liquid stay in the central portion and the peripheral portion of the substrate for substantially the same time. Thus, it is possible to uniformize the processing of the substrate with the processing liquid.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2010-067819 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] However, in the substrate processing device described in Patent Literature 1, the surface of the substrate after the processing liquid treatment can become uneven. The reason for this is that there can be a case where the surface shape of the substrate before the processing liquid treatment is uneven. For example, in a case where the substrate before the processing liquid treatment is mechanically polished, there can be a case where the surface shape of the substrate is uneven.

[0008] The present application has been achieved in view of the above-described problems, and has an object to provide a processing condition determination method, a substrate processing method, a substrate product manufacturing method, a computer program, a storage medium, a processing condition determination device, and a substrate processing device, which enable a processing with a processing liquid that makes the surface of a substrate after the processing close to even.

[0009] MEANS FOR SOLVING PROBLEMS

[0010] According to an aspect of the present application, in a processing condition determination method, a processing condition that can be used when processing a target substrate along with moving a position of ejection of a processing liquid in a radial direction of the target substrate as a processing target is determined from among a plurality of processing conditions. The processing condition determination method includes the following steps: based on measurement thickness information including measurement values of thicknesses at a plurality of positions in a radial direction of the target substrate, for each of the plurality of processing conditions, calculation of prediction thickness information including predicted values of thicknesses at the plurality of positions of the target substrate after processing; evaluation of the plurality of prediction thickness information calculated for the plurality of processing conditions respectively in accordance with a prescribed evaluation method, and selection of prediction thickness information from among the plurality of prediction thickness information; and determination of the processing condition corresponding to the selected prediction thickness information. The measurement values included in the measurement thickness information represent thicknesses of the target substrate measured in the radial direction of the target substrate before processing the target substrate with the processing liquid.

[0011] The processing condition determination method of the present application preferably further includes the following step: calculation of an end region processing time based on a maximum value of the predicted values included in the selected prediction thickness information, the maximum value being a predicted value in an end region in the radial direction of the target substrate. The end region processing time preferably represents a processing time for the end region of the target substrate, and represents a processing time in a state where the position of ejection of the processing liquid is fixed.

[0012] In the processing condition determination method of the present application, in the step of calculating the end region processing time, the end region processing time is preferably calculated based on the maximum value of the predicted values in the end region of the target substrate, a target thickness value of the target substrate, and a processing coefficient. The processing coefficient is preferably set in advance, and represents a processing amount of the substrate per unit time with the processing liquid.

[0013] In the processing condition determination method of the present application, in the step of calculating the prediction thickness information, the prediction thickness information is preferably calculated based on the measurement thickness information of the target substrate, a target thickness value of the target substrate, and measured processing amount information including processing amounts at a plurality of positions in the radial direction of the substrate measured in advance along the radial direction of the substrate. The processing amounts included in the measured processing amount information preferably represent processing amounts when processing the substrate in accordance with the processing condition with which the measured processing amount information is associated among the plurality of processing conditions.

[0014] In the processing condition determination method of the present application, preferably, the process of calculating the predicted thickness information includes the following processes: for each of the plurality of positions of the target substrate, calculating a processing time when the thickness at each of the plurality of positions of the target substrate becomes the target thickness value, based on the measured thickness information of the target substrate, the target thickness value of the target substrate, and the measured processing amount information; selecting the shortest processing time from the plurality of processing times calculated for the plurality of positions of the target substrate, respectively; and calculating the predicted thickness information based on the measured thickness information of the target substrate, the measured processing amount information, and the shortest processing time.

[0015] In the processing condition determination method of the present application, preferably, in the process of selecting the predicted thickness information, the predicted values of the thickness after processing at two or more positions in an inner region of the target substrate surface, which is inside of an end region in a radial direction, are used to evaluate the plurality of predicted thickness information.

[0016] In the processing condition determination method of the present application, preferably, the prescribed evaluation method is a method of evaluating the closeness of a predicted thickness pattern represented by the predicted thickness information to flatness. Preferably, the predicted thickness pattern represents a distribution of predicted values of the thickness in the radial direction of the target substrate. Preferably, the prescribed evaluation method includes at least one of a first evaluation method, a second evaluation method, and a third evaluation method. Preferably, the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness according to an index representing the degree of concave-convex of the predicted thickness pattern. Preferably, the second evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness according to an index based on the number of predicted values close to the target thickness value of the target substrate among a plurality of predicted values constituting the predicted thickness pattern. Preferably, the third evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness according to an index representing the closeness of the inclination of the predicted thickness pattern to zero.

[0017] In the processing condition determination method of the present application, it is preferable that the first evaluation method includes at least one of a first method, a second method, a third method, and a fourth method. It is preferable that the first method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, a difference value obtained by subtracting the predicted value constituting the predicted thickness pattern from a value on a first evaluation straight line. It is preferable that the first evaluation straight line is a straight line that is tangent to the predicted thickness pattern from a side larger than the predicted thickness pattern. It is preferable that the second method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, a difference value obtained by subtracting a value on a second evaluation straight line from the predicted value constituting the predicted thickness pattern. It is preferable that the second evaluation straight line is a straight line that is tangent to the predicted thickness pattern from a side smaller than the predicted thickness pattern. It is preferable that the third method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, a difference value obtained by subtracting a value on a third evaluation straight line from the predicted value constituting the predicted thickness pattern. It is preferable that the third evaluation straight line is an approximate straight line of the predicted thickness pattern obtained by a least square method. It is preferable that the fourth method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, a difference value obtained by subtracting a value on a fourth evaluation straight line from the predicted value constituting the predicted thickness pattern. It is preferable that the fourth evaluation straight line is a straight line indicating a target thickness value of the object substrate.

[0018] In the processing condition determination method of the present application, it is preferable that the second evaluation method includes at least one of a first method and a second method. It is preferable that the first method of the second evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, the number of predicted values existing within an allowable range of a fifth evaluation straight line among the plurality of predicted values constituting the predicted thickness pattern. It is preferable that the fifth evaluation straight line is a straight line indicating the target thickness value of the object substrate. It is preferable that the second method of the second evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, each difference value obtained by subtracting a value on a sixth evaluation straight line from each predicted value among the plurality of predicted values constituting the predicted thickness pattern. It is preferable that the sixth evaluation straight line is a straight line indicating the target thickness value of the object substrate.

[0019] In the processing condition determination method of the present application, it is preferable that the third evaluation method include at least one of a first method and a second method. It is preferable that the first method of the third evaluation method be a method of evaluating the closeness of the predicted thickness pattern to flatness by using, as the index, the inclination of a seventh evaluation straight line with respect to an eighth evaluation straight line. It is preferable that the seventh evaluation straight line be an approximate straight line of the predicted thickness pattern obtained by a least square method. It is preferable that the eighth evaluation straight line be a straight line indicating a fixed value. It is preferable that the second method of the third evaluation method be a method of evaluating the closeness of the predicted thickness pattern to flatness by using, as the index, the inclination of the predicted thickness pattern at each of the positions in the radial direction of the object substrate.

[0020] According to another aspect of the present application, a substrate processing method includes a process of processing an object substrate with a processing liquid while moving a position of ejection of the processing liquid along a radial direction of the object substrate, based on a processing condition determined by the processing condition determination method described above.

[0021] According to still another aspect of the present application, a substrate product manufacturing method manufactures a substrate product as a processed object substrate by processing the object substrate with the substrate processing method described above.

[0022] According to still another aspect of the present application, a computer program causes a computer to execute the processing condition determination method described above.

[0023] According to still another aspect of the present application, a storage medium stores the computer program described above.

[0024] According to still another aspect of the present application, a processing condition determination device determines a processing condition that can be used when an object substrate as a substrate to be processed is processed while a position of ejection of a processing liquid is moved along a radial direction of the object substrate. The processing condition determination device includes a thickness prediction section, an evaluation section, and a determination section. The thickness prediction section calculates, for each of a plurality of processing conditions, prediction thickness information including predicted values of thicknesses of the object substrate at a plurality of positions in a radial direction of the object substrate, based on measured thickness information including measured values of thicknesses of the object substrate at the plurality of positions in the radial direction. The evaluation section evaluates a plurality of the prediction thickness information calculated for the plurality of processing conditions in accordance with a prescribed evaluation method, and selects prediction thickness information from among the plurality of prediction thickness information. The determination section determines the processing condition corresponding to the selected prediction thickness information. The measured values included in the measured thickness information indicate thicknesses of the object substrate measured along the radial direction of the object substrate before the object substrate is processed with the processing liquid.

[0025] According to still another aspect of the present application, a substrate processing apparatus includes the processing condition determination device and a processing device. The processing device processes the target substrate with the processing liquid while moving the ejection position of the processing liquid along the radial direction of the target substrate based on the processing condition determined by the processing condition determination device.

[0026] Effects of the Invention

[0027] According to the present application, a processing with a processing liquid that makes the surface of a processed substrate close to flat can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present application.

[0029] Figure 2 FIG. 2 is a plan view showing a scanning process of a substrate with a nozzle of the substrate processing apparatus according to the present embodiment.

[0030] Figure 3 FIG. 3 is a plan view showing a scanning process of a substrate with an optical probe of the substrate processing apparatus according to the present embodiment.

[0031] Figure 4 FIG. 4 is a block diagram showing a control device according to the present embodiment.

[0032] Figure 5 FIG. 5 is a graph showing a measured value of a substrate thickness measured by a thickness measurement section according to the present embodiment.

[0033] Figure 6 FIG. 6 is a graph showing a predicted value of a substrate thickness calculated by a control section according to the present embodiment.

[0034] Figure 7 FIG. 7 is a graph showing a predicted value of a substrate thickness selected by the control section according to the present embodiment.

[0035] Figure 8 FIG. 8 is a graph showing a measured processing amount table stored in a storage section according to the present embodiment.

[0036] Figure 9 (a) of FIG. 9 is a graph showing a processing time of a substrate calculated by the control section according to the present embodiment, Figure 9 (b) of FIG. 9 is a graph showing a predicted value of a substrate thickness calculated by the control section according to the present embodiment, Figure 9 (c) of FIG. 9 is a graph showing a difference between the predicted value of the thickness according to the present embodiment and a target thickness value.

[0037] Figure 10 (a) of FIG. 10 is a graph showing a first method of a first evaluation method according to the present embodiment, Figure 10(c) in FIG. 6 is a graph showing a third method of the first evaluation method. Figure 10 (c) in FIG. 6 is a graph showing a third method of the first evaluation method. Figure 10 (d) in FIG. 6 is a graph showing a fourth method of the first evaluation method.

[0038] Figure 11 (a) in FIG. 7 is a graph showing a first method of the second evaluation method of the present embodiment, Figure 11 (b) in FIG. 7 is a graph showing a second method of the second evaluation method.

[0039] Figure 12 (a) in FIG. 8 is a graph showing a first method of the third evaluation method of the present embodiment, Figure 12 (b) in FIG. 8 is a graph showing a second method of the third evaluation method.

[0040] Figure 13 is a graph showing a predicted value of the thickness in the end region of the substrate of the present embodiment.

[0041] Figure 14 is a flowchart showing the substrate processing method of the present embodiment.

[0042] Figure 15 is a flowchart showing the process S3 of Figure 14

[0043] Figure 16 is a flowchart showing the process S31 of Figure 15

[0044] Figure 17 is a flowchart showing the process S4 of Figure 14 DETAILED DESCRIPTION

[0045] Hereinafter, an embodiment of the present application will be described with reference to the accompanying drawings. Note that the same or equivalent portions in different drawings are denoted by the same reference numerals, and description thereof will not be repeated. Further, in the drawings, X axis, Y axis, and Z axis are appropriately illustrated for easy understanding. The X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to a horizontal direction, and the Z axis is parallel to a vertical direction. Note that "plan view observation" means observation of an object from a vertical upper side.

[0046] With reference to Figures 1 to 17 , a substrate processing apparatus 100 of an embodiment of the present application will be described. First, with reference to Figure 1 , the substrate processing apparatus 100 will be described. Figure 1 is a view showing the substrate processing apparatus 100. Figure 1 ​​​The substrate processing apparatus 100 shown uses a processing liquid to process the substrate W. That is, the substrate W is the substrate to be processed by the processing liquid. The substrate W is an example of an "object substrate". The substrate processing apparatus 100 processes the substrate W one by one. The substrate W is approximately circular.

[0047] In this embodiment, substrate W is a bare substrate. A bare substrate is a substrate that has not yet been coated with a film. That is, a bare substrate is a substrate before film deposition. For example, a bare substrate is a substrate that has been mechanically polished and is a substrate before film deposition.

[0048] The substrate W may be, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disc, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. In the following description of the embodiments, the substrate W is a semiconductor wafer including silicon.

[0049] like Figure 1 As shown, the substrate processing apparatus 100 includes a processing device 1, a control device 19, a valve V1, a supply pipe K1, a valve V2, and a supply pipe K2. The control device 19 controls the processing device 1, valve V1, and valve V2.

[0050] The processing apparatus 1 sprays a processing liquid onto the substrate W to process the substrate W. Specifically, the processing apparatus 1 processes the substrate W with the processing liquid while moving the spray position of the processing liquid radially along the substrate W. The processing liquid is a chemical solution. For example, if the processing liquid is an etching solution, the processing apparatus 1 performs an etching process on the substrate W.

[0051] Etching solutions include, for example, fluoronitric acid (a mixture of hydrofluoric acid (HF) and nitric acid (HNO3), hydrofluoric acid, buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), or phosphoric acid (H3PO4). Furthermore, the type of etching solution is not particularly limited, as long as it can etch the substrate W; for example, it can be acidic or alkaline.

[0052] Specifically, the processing device 1 includes a chamber 2, a rotary chuck 3, a rotary motor 5, a nozzle Nzm, a nozzle moving part 9, a nozzle 11, multiple protective members 13 (two protective members 13 in this embodiment), a thickness measuring part 15, and a probe moving part 17. The "m" in "nozzle Nzm" represents an integer greater than or equal to 1. Figure 1 In the example, m = 1. That is, in Figure 1 In the example, the processing device 1 has a nozzle NZ1 for spraying out the processing liquid. However, the processing device 1 may also have multiple nozzles NZm for spraying out the processing liquid respectively.

[0053] The chamber 2 has a substantially box shape. The chamber 2 houses the substrate W, the rotary chuck 3, the rotary motor 5, the nozzle NZ1, the nozzle moving section 9, the nozzle 11, the plurality of guards 13, the thickness measuring section 15, the probe moving section 17, a portion of the supply pipe K1, and a portion of the supply pipe K2.

[0054] The rotary chuck 3 holds the substrate W and rotates. Specifically, the rotary chuck 3 holds the substrate W horizontally within the chamber 2 while rotating the substrate W about the rotation axis AX. Specifically, the rotary chuck 3 is driven to rotate by the rotary motor 5.

[0055] The rotary chuck 3 includes a plurality of chuck members 32 and a rotary base 33. The plurality of chuck members 32 are provided to the rotary base 33 along the periphery of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal posture. The rotary base 33 is a substantially circular plate shape and supports the plurality of chuck members 32 in a horizontal posture. The rotary motor 5 rotates the rotary base 33 about the rotation axis AX. Thus, the rotary base 33 rotates about the rotation axis AX. As a result, the substrate W held by the plurality of chuck members 32 provided to the rotary base 33 rotates about the rotation axis AX. Specifically, the rotary motor 5 includes a motor body 51 and a shaft 53. The shaft 53 is combined with the rotary base 33. Also, the motor body 51 rotates the rotary base 33 by rotating the shaft 53.

[0056] The nozzle NZ1 ejects a treatment liquid toward the substrate W during rotation of the substrate W. The treatment liquid is a chemical liquid. For example, the treatment liquid is an etching liquid.

[0057] The supply pipe K1 supplies the treatment liquid to the nozzle NZ1. The valve V1 switches between start and stop of supply of the treatment liquid to the nozzle NZ1.

[0058] The nozzle moving section 9 moves the nozzle NZ1 in a substantially vertical direction and a substantially horizontal direction. Specifically, the nozzle moving section 9 includes an arm 91, a turning shaft 93, and a nozzle moving mechanism 95. The arm 91 extends in a substantially horizontal direction. The nozzle NZ1 is disposed at a front end portion of the arm 91. The arm 91 is combined with the turning shaft 93. The turning shaft 93 extends in a substantially vertical direction. The nozzle moving mechanism 95 turns the turning shaft 93 about a turning axis in a substantially vertical direction, thereby turning the arm 91 in a substantially horizontal plane. As a result, the nozzle NZ1 moves in a substantially horizontal plane. In addition, the nozzle moving mechanism 95 raises and lowers the turning shaft 93 in a substantially vertical direction, thereby raising and lowering the arm 91. As a result, the nozzle NZ1 moves in a substantially vertical direction. The nozzle moving mechanism 95 includes, for example, a ball screw mechanism and an electric motor that supplies driving force to the ball screw mechanism.

[0059] The nozzle 11 sprays the rinsing liquid toward the substrate W during rotation of the substrate W. The rinsing liquid is, for example, deionized water, carbonated water, electrolytic ion water, hydrogen water, ozone water, or hydrochloric acid water of a dilute concentration (e.g., around 10 ppm to 100 ppm).

[0060] The supply pipe K2 supplies the rinsing liquid to the nozzle 11. The valve V2 switches between start and stop of supply of the rinsing liquid to the nozzle 11.

[0061] The plurality of guards 13 each have a substantially cylindrical shape. The plurality of guards 13 each catch the processing liquid or the rinsing liquid discharged from the substrate W.

[0062] The thickness measurement section 15 measures the thickness of the substrate W and outputs measurement thickness information (hereinafter, referred to as "measurement thickness information MG") indicating the thickness of the substrate W to the control device 19. In the present embodiment, the thickness measurement section 15 measures the thickness of the substrate W in a non-contact manner and outputs the measurement thickness information MG indicating the thickness of the substrate W to the control device 19. The thickness measurement section 15 measures the thickness of the substrate W by, for example, a spectral interferometry method. Specifically, the thickness measurement section 15 includes an optical probe 151, a connection line 153, and a thickness measurer 155. The optical probe 151 includes a lens. The connection line 153 connects the optical probe 151 and the thickness measurer 155. The connection line 153 includes an optical fiber. The thickness measurer 155 includes a light source and a light-receiving element. Light emitted from the light source of the thickness measurer 155 is emitted toward the substrate W via the connection line 153 and the optical probe 151. Light reflected by the substrate W is received by the light-receiving element of the thickness measurer 155 via the optical probe 151 and the connection line 153. The thickness measurer 155 analyzes the received light and calculates the thickness of the substrate W based on the analysis result. The thickness measurer 155 outputs the measurement thickness information MG indicating the thickness of the substrate W to the control device 19.

[0063] The probe moving section 17 moves the optical probe 151 in a substantially vertical direction and a substantially horizontal direction. Specifically, the probe moving section 17 includes an arm 171, a rotating shaft 173, and a probe moving mechanism 175. The arm 171 extends in a substantially horizontal direction. The optical probe 151 is disposed at a front end portion of the arm 171. The arm 171 is coupled to the rotating shaft 173. The rotating shaft 173 extends in a substantially vertical direction. The probe moving mechanism 175 rotates the rotating shaft 173 about a rotation axis line in a substantially vertical direction, thereby rotating the arm 171 in a substantially horizontal plane. As a result, the optical probe 151 moves in a substantially horizontal plane. In addition, the probe moving mechanism 175 raises and lowers the rotating shaft 173 in a substantially vertical direction, thereby raising and lowering the arm 171. As a result, the optical probe 151 moves in a substantially vertical direction. The probe moving mechanism 175 includes, for example, a ball screw mechanism and an electric motor that supplies a driving force to the ball screw mechanism.

[0064] Next, the scanning process of the substrate W by the nozzle NZ1 will be described with reference to Figure 2 The scanning process of the substrate W by the nozzle NZ1 will be described with reference to Figure 2 is a plan view showing the scanning process of the substrate W by the nozzle NZ1. As shown in Figure 2 The scanning process of the substrate W by the nozzle NZ1 refers to a process of moving the ejection position of the processing liquid along the radial direction RD of the substrate W while processing the substrate W with the processing liquid. Specifically, the scanning process by the nozzle NZ1 refers to a process of ejecting the processing liquid toward the substrate W while moving the nozzle NZ1 in a manner that the landing position of the processing liquid on the surface SF of the substrate W forms a circular arc-shaped trajectory TJ1 in a plan view. In the scanning process, the nozzle NZ1 is spaced apart from the substrate W in the direction of the rotation axis AX. Further, the radius R of the substrate W is smaller than the length of the arm 91, and thus the trajectory TJ1 can be substantially regarded as a substantially straight line.

[0065] The trajectory TJ1 passes through the edge EG of the substrate W and the center CT of the substrate W. The center CT indicates a portion of the substrate W through which the rotation axis AX passes. The edge EG indicates a peripheral portion of the substrate W. The scanning process of the substrate W by the nozzle NZ1 is performed during rotation of the substrate W.

[0066] Specifically, the nozzle NZ1 moves between the position TR0 directly above the center CT of the substrate W and the turnaround position TR1 while ejecting the processing liquid toward the substrate W with respect to the substrate W, and performs rotation in the rotation direction RT1 in the clockwise direction and rotation in the rotation direction RT2 in the counterclockwise direction. In the present embodiment, the turnaround position TR1 is a position directly above the end region EA of the radial direction RD of the substrate W. In addition, the turnaround position TR1 indicates the turnaround position of the nozzle NZ1 in the rotation direction RT1. The position TR0 directly above the center CT of the substrate W indicates the turnaround position of the nozzle NZ1 in the rotation direction RT2.

[0067] Further, the surface SF of the substrate W includes the end region EA and an inner region IA inside the radial direction RD of the substrate W than the end region EA. The inner region IA is a substantially circular region. The end region EA is a substantially annular region surrounding the inner region IA. The width of the radial direction RD of the end region EA is, for example, a length of 1 / 15 or more and 1 / 5 or less of the radius R of the substrate W.

[0068] More specifically, the nozzle NZ1 turns from the position TR0 directly above the center CT of the substrate W in the turning direction RT1, turns at the turnaround position TR1, and turns in the turning direction RT2. Further, the nozzle NZ1 turns at the position TR0 directly above the center CT of the substrate W in the turning direction RT1. The nozzle NZ1 repeatedly moves between the position TR0 directly above the center CT of the substrate W and the turnaround position TR1 while ejecting the processing liquid toward the surface SF of the substrate W.

[0069] The closer the position of the nozzle NZ1 is to the turnaround position TR1, the lower the moving speed of the nozzle NZ1 is, for example. The moving speed of the nozzle NZ1 indicates the moving speed in the radial direction RD of the substrate W. Further, the change in the moving speed of the nozzle NZ1 is not limited to be linear, and can be non-linear. In addition, the moving speed of the nozzle NZ1 can change in steps. Further, the moving speed of the nozzle NZ1 can be fixed.

[0070] Further, the nozzle NZ1 can repeatedly move between the turnaround position TR1 and a turnaround position TR2. More specifically, the nozzle NZ1 turns in the turning direction RT1, turns at the turnaround position TR1, and turns in the turning direction RT2. Then, the nozzle NZ1 turns at the turnaround position TR2 and turns in the turning direction RT1. When viewed from above, the turnaround position TR1 and the turnaround position TR2 are apart from each other on the trajectory TJ1 across the center CT of the substrate W. The turnaround position TR2 indicates the turnaround position of the nozzle NZ1 in the turning direction RT2. In addition, the turnaround position TR2 is a position different from the turnaround position TR1, and is a position directly above the end region EA of the radial direction RD of the substrate W.

[0071] Next, the scanning process of the substrate W using the optical probe 151 will be described with reference to Figure 3 The scanning process of the substrate W using the optical probe 151 will be described. Figure 3 is a plan view that indicates the scanning process of the substrate W using the optical probe 151. As shown in Figure 3 The scanning process using the optical probe 151 refers to a process of measuring the thickness of the substrate W while moving the optical probe 151 in a manner that forms a circular arc-shaped trajectory TJ2 for a measurement position at which the thickness of the substrate W is measured when viewed from above. The trajectory TJ2 passes through the edge EG of the substrate W and the center CT of the substrate W. The scanning process of the substrate W using the optical probe 151 is performed during the rotation of the substrate W.

[0072] Specifically, the optical probe 151 moves the measurement position while moving between the center CT and the edge EG of the substrate W in a plan view. In other words, the thickness measurement section 15 measures the thickness of the substrate W at each of the plurality of measurement positions of the substrate W. As a result, the thickness of the substrate W is measured at the distribution from the center CT to the edge EG of the substrate W. That is, the distribution of the thickness in the radial direction RD of the substrate W is measured.

[0073] Next, the details of the control device 19 will be described with reference to Figures 4-7 to Figure 1 . Figure 4 is a block diagram showing the control device 19. Figure 4 The control device 19 determines the processing recipe information RCn that can be used when processing the substrate W while moving the ejection position of the processing liquid along the radial direction RD of the substrate W from a plurality of processing recipe information RCn that are different from each other. "n" in "RCn" represents an integer of 1 or more. The control device 19 corresponds to one example of a "processing condition determination device".

[0074] The processing recipe information RCn is information that specifies the processing content and the processing procedure of the substrate W. That is, the processing recipe information RCn is information that specifies the processing conditions of the substrate W. As one example, the processing conditions of the substrate W include at least the operation time of the processing of the substrate W using the processing liquid, information indicating the nozzle NZ1 that ejects the processing liquid toward the substrate W, and information indicating the moving speed of the nozzle NZ1 that ejects the processing liquid toward the substrate W. The moving speed of the nozzle NZ1 is, for example, the moving speed at each position in the radial direction RD of the substrate W, or the moving speed at each interval in the radial direction RD of the substrate W. The processing recipe information RCn corresponds to one example of the "processing conditions" of the processing liquid to the substrate W.

[0075] Specifically, as shown in Figure 4 , the control device 19 has a control section 21 and a storage section 23. The control section 21 controls the storage section 23. In addition, the control section 21 controls each of the other structures of the substrate processing device 100.

[0076] The control section 21 includes a processor such as a central processing unit (CPU). The storage section 23 includes a storage device that stores data and a computer program. The processor of the control section 21 executes the computer program stored in the storage device of the storage section 23, and controls each of the structures of the substrate processing device 100.

[0077] The storage section 23 includes, for example, a main storage device such as a semiconductor memory and an auxiliary storage device such as a semiconductor memory and a hard disk. The storage section 23 can also include a removable medium such as an optical disk. The storage section 23 is, for example, a non-transitory computer-readable storage medium. The storage section 23 corresponds to one example of a "storage medium".

[0078] Specifically, the storage section 23 stores, in advance, the measured processing amount table 231, the plurality of processing program information RCn, a target thickness value TG of the substrate W, and a computer program 232. The target thickness value TG of the substrate W indicates a target value of the thickness of the substrate W after processing with the processing liquid. The target thickness value TG can be changed by input by the user via an input device. The measured processing amount table 231 will be described later.

[0079] In addition, the storage section 23 stores the measured thickness information MG of the substrate W output by the thickness measurement section 15. The measured thickness information MG includes measured values of the thickness at a plurality of positions (a plurality of measurement positions) on the radial direction RD of the substrate W. That is, the measured thickness information MG includes measured values of a plurality of thicknesses respectively measured at a plurality of positions (a plurality of measurement positions) on the radial direction RD of the substrate W. In the present embodiment, the plurality of positions (a plurality of measurement positions) on the radial direction RD of the substrate W are equally spaced on the radial direction RD of the substrate W.

[0080] Figure 5 is a graph showing measured values of the thickness of the substrate W measured by the thickness measurement section 15. The horizontal axis indicates the position (mm) on the substrate W from the center CT of the substrate W along the radial direction RD of the substrate W. In the horizontal axis, the position "0" mm indicates the center CT of the substrate W, and the position "R" mm indicates the outermost position (the vicinity of the edge EG) of the radial direction RD of the substrate W. "R" corresponds to the radius R of the substrate W. The vertical axis indicates the measured value of the thickness of the substrate W. For example, the vertical axis is on the order of several μm to several tens of μm.

[0081] In Figure 5 In the illustrated substrate W, the thickness gradually decreases from the vicinity of the center CT of the substrate W toward the outside of the radial direction RD, and the thickness suddenly increases at the end region EA (Rb [mm] to R [mm]) of the substrate W. At the outermost position (the vicinity of the edge EG) of the radial direction RD of the substrate W, the thickness of the substrate W is the largest.

[0082] Returning to Figure 4The control section 21 has a thickness prediction section 211, an evaluation section 212, and a determination section 213. Specifically, the processor of the control section 21 executes the computer program 232 stored in the storage device of the storage section 23, and functions as the thickness prediction section 211, the evaluation section 212, and the determination section 213. The control section 21 preferably further has an end region processing section 214. In this case, the processor of the control section 21 executes the computer program 232 stored in the storage device of the storage section 23, and functions as the end region processing section 214. The end region processing section 214 will be described later.

[0083] The thickness prediction section 211 acquires the measurement thickness information MG from the storage section 23. The thickness prediction section 211 calculates the prediction thickness information PTn for each of the plurality of process recipe information RCn on the basis of the measurement thickness information MG. That is, the thickness prediction section 211 calculates the plurality of prediction thickness information PTn corresponding to the plurality of process recipe information RCn on the basis of the measurement thickness information MG. The "n" in "PTn" represents an integer of 1 or more. The prediction thickness information PTn includes the predicted values of the processed thicknesses at a plurality of positions on the radial direction RD of the substrate W. That is, the prediction thickness information PTn includes the predicted values of the processed thicknesses predicted at a plurality of positions on the radial direction RD of the substrate W, respectively. In the present embodiment, the plurality of positions on the radial direction RD of the substrate W are equidistant on the radial direction RD of the substrate W. The storage section 23 stores the prediction thickness information PTn in association with the process recipe information RCn. Details of the calculation method of the prediction thickness information PTn will be described later.

[0084] Here, a prediction thickness pattern (hereinafter, referred to as "prediction thickness pattern PNn") represented by the prediction thickness information PTn is defined. The "n" in "PNn" represents an integer of 1 or more. The prediction thickness pattern PNn represents the distribution of the predicted values of the processed thicknesses on the radial direction RD of the substrate W. The predicted values of the processed thicknesses constituting the prediction thickness pattern PNn are the predicted values of the processed thicknesses included in the prediction thickness information PTn.

[0085] As one example, the plurality of prediction thickness information PT1 to PT3 corresponding to the plurality of process recipe information RC1 to RC3, respectively, are calculated. Note that the number of the process recipe information RCn is not limited to 3, and can be 2 or 4 or more. Similarly, the number of the prediction thickness information PTn is not limited to 3, and can be 2 or 4 or more.

[0086] Figure 6is a graph showing the predicted thickness information PT1 to PT3. The horizontal axis indicates a position (mm) on the substrate W from the center CT along the radial direction RD of the substrate W. The vertical axis indicates a predicted value of the thickness after the processing of the substrate W. For example, the vertical axis is in the order of several μm to several tens of μm. In Figure 6 , the predicted values of the predicted thickness information PT1 are indicated by plotted points of a quadrangle, showing a predicted thickness pattern PN1. The predicted values of the predicted thickness information PT2 are indicated by plotted points of a triangle, showing a predicted thickness pattern PN2. The predicted values of the predicted thickness information PT3 are indicated by plotted points of a circle, showing a predicted thickness pattern PN3. Further, in Figure 6 , the predicted values of the thickness after the processing at a plurality of positions in the inner region IA (0 [mm] to Rb [mm]) of the substrate W are shown.

[0087] As shown in Figure 4 and Figure 6 , the predicted thickness information PT1 is calculated in correspondence with the processing recipe information RC1. The predicted thickness information PT2 is calculated in correspondence with the processing recipe information RC2. The predicted thickness information PT3 is calculated in correspondence with the processing recipe information RC3. The three predicted thickness information PT1 to PT3 are different from each other.

[0088] The evaluation section 212 evaluates the plurality of predicted thickness information PT1 to PT3 calculated for the plurality of processing recipe information RC1 to RC3 in accordance with a prescribed evaluation method, and selects at least one predicted thickness information PTn from the plurality of predicted thickness information PT1 to PT3. In the present embodiment, the evaluation section 212 evaluates the plurality of predicted thickness information PT1 to PT3 in accordance with a prescribed evaluation method, and selects one predicted thickness information PT3 from the plurality of predicted thickness information PT1 to PT3. Specifically, the evaluation section 212 evaluates the plurality of predicted thickness information PT1 to PT3 in accordance with a prescribed evaluation method, and selects the predicted thickness information PT3 indicating the predicted thickness pattern PN3 closest to flat from the plurality of predicted thickness information PT1 to PT3. Details of the prescribed evaluation method will be described later.

[0089] Figure 7 is a graph showing the predicted thickness information PT3 selected by the evaluation section 212. Figure 7 The horizontal axis and the vertical axis of Figure 6 are the same as those of

[0090] As shown in Figure 4 and Figure 7As illustrated, the determination section 213 determines the processing recipe information RC3 corresponding to the predicted thickness information PT3 selected by the evaluation section 212. Then, the control section 21 controls the processing apparatus 1 based on the processing recipe information RC3 determined by the determination section 213. As a result, the processing apparatus 1 processes the substrate W with the processing liquid while moving the ejection position of the processing liquid along the radial direction RD of the substrate W based on the determined processing recipe information RC3. In this case, for example, the control section 21 controls the processing apparatus 1 in such a manner that the substrate W is processed in accordance with the processing recipe information RC3 determined by the determination section 213. As a result, the processing apparatus 1 processes the substrate W with the processing liquid in accordance with the determined processing recipe information RC3. Alternatively, for example, the control section 21 can control the processing apparatus 1 in such a manner that the processing recipe information RC3 determined by the determination section 213 is changed and the substrate W is processed in accordance with the changed processing recipe information RC3. As a result, the processing apparatus 1 processes the substrate W with the processing liquid in accordance with the changed processing recipe information RC3.

[0091] As described above with reference to Figures 4-7 In the present embodiment, the processing recipe information RC3 corresponding to the predicted thickness information PT3 selected based on the evaluation by the evaluation section 212 is determined.

[0092] Accordingly, the substrate W can be processed in such a manner that the substrate W is processed based on the processing recipe information RC3 determined by the determination section 213 so that the thickness thereof corresponds to the predicted value of the thickness included in the predicted thickness information PT3 appropriately evaluated by the evaluation section 212. As a result, processing of the substrate W with the processing liquid in which the surface SF of the processed substrate W is close to flat can be realized.

[0093] In other words, the substrate W can be processed in such a manner that the substrate W is processed based on the processing recipe information RC3 determined by the determination section 213 so that the thickness thereof corresponds to the predicted thickness pattern PN3 closest to flat. As a result, processing of the substrate W with the processing liquid in which the surface SF of the processed substrate W is close to flat can be realized.

[0094] In particular in the present embodiment, preferably, as described above with reference to Figure 6 The reason for this is that the predicted value of the thickness after processing in the inner region IA of the substrate W exhibits a more characteristic distribution than the predicted value of the thickness after processing in the end region EA of the substrate W.

[0095] Next, reference will be made to Figure 4 and Figure 8The thickness prediction section 211 will be described in detail. As shown in Fig. 7, the thickness prediction section 211 calculates the predicted thickness information PTn of the substrate W based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the measured process amount information (hereinafter, referred to as "measured process amount information EMn") included in the measured process amount table 231. "n" in "EMn" represents an integer of 1 or more. Figure 4

[0096] The measured process amount information EMn includes the process amount at a plurality of positions on the radial direction RD of the substrate WA measured in advance along the radial direction RD of the substrate (hereinafter, referred to as "substrate WA"). The process amount at each position represents the process amount with the processing liquid at each position. The substrate WA has the same specifications as the substrate W as the processing target. That is, the composition and the size of the substrate WA are the same as those of the substrate W as the processing target.

[0097] Figure 8 is a diagram showing the measured process amount table 231 stored in the storage section 23 shown in Fig. 6. As shown in Fig. 8, the measured process amount table 231 includes a plurality of measured process amount information EMn (EM1, EM2,...). In the measured process amount table 231, a plurality of measured process amount information EMn (EM1, EM2,...) different from each other are associated with a plurality of processing recipe information RCn (RC1, RC2,...) different from each other, respectively. Specifically, the plurality of measured process amount information EMn (EM1, EM2,...) are associated with the identification information of the plurality of processing recipe information RCn (RC1, RC2,...) respectively. Figure 4 Figure 8 In the example of Fig. 8, each of the plurality of measured process amount information EMn represents the measured process amount at a plurality of positions (specifically, J positions) on the radial direction RD of the substrate WA. J represents an integer of 2 or more. The "position" in the measured process amount table 231 represents the position (mm) on the substrate WA from the center CT of the substrate WA along the radial direction RD of the substrate WA. The "process amount" in the measured process amount table 231 represents the measured process amount (pm) at the "position" of the substrate WA. In the present embodiment, the plurality of "positions" on the radial direction RD of the substrate WA are equally spaced on the radial direction RD of the substrate WA.

[0098] Figure 8

[0099] ​​​​The processing amount at each position of the substrate WA included in the measured processing amount information EMn indicates the processing amount at each position of the substrate WA when the substrate WA is processed according to the processing recipe information RCn with which the measured processing amount information EMn is associated. For example, the processing amounts al to aJ at each position of the substrate WA indicated by the measured processing amount information EMl indicate the processing amounts at each position of the substrate WA when the substrate WA is processed according to the processing recipe information RC1 with which the measured processing amount information EMl is associated. Further, in the case of the measured processing amount information EM2, for example, the processing amounts bl to bJ are included. Figure 8

[0100] Further, the processing amount at each position of the substrate WA included in the measured processing amount information EMn is measured after the substrate WA is processed by performing the scan processing for a prescribed operation time. The "prescribed operation time" in this case can be the same as or different from the "operation time of processing" included in the processing recipe information RC1.

[0101] As described above with reference to Figure 4 and Figure 8 According to the present embodiment, the thickness prediction section 211 calculates the predicted thickness information PTn of the substrate W based on the measured processing amount information EMn. As a result, the predicted thickness information PTn with high precision can be obtained.

[0102] In particular, the measured processing amount table 231 includes a plurality of measured processing amount information EMn corresponding to the nozzle NZ1. That is, in the measured processing amount table 231, the nozzle NZ1 is associated with a plurality of measured processing amount information EMn.

[0103] Further, the thickness prediction section 211 calculates the predicted thickness information PTn of the substrate W for each of the plurality of measured processing amount information EMn based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the plurality of measured processing amount information EMn associated with the nozzle NZ1.

[0104] In other words, the thickness prediction section 211 calculates the predicted thickness information PTn of the substrate W for each of the plurality of processing recipe information RCn based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the plurality of measured processing amount information EMn associated with the nozzle NZ1. The reason for this is that the plurality of processing recipe information RCn and the plurality of measured processing amount information EMn are respectively associated with each other.

[0105] ​Furthermore, when the processing apparatus 1 has multiple nozzles NZm, the measured processing quantity table 231 includes multiple measured processing quantity information EMn for each of the multiple nozzles NZm. Moreover, the thickness prediction unit 211 selects at least one nozzle NZm from the multiple nozzles NZm. For example, the thickness prediction unit 211 selects one nozzle NZm from the multiple nozzles NZm. Then, based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the multiple measured processing quantity information EMn associated with the selected nozzle NZm, the thickness prediction unit 211 calculates the predicted thickness information PTn of the substrate W for each of the multiple measured processing quantity information EMn. Furthermore, in Figure 8 In the example, the measured throughput table 231 includes multiple measured throughput information EMn (EM11, EM12, ...) associated with nozzle NZ2. For example, the measured throughput information EM11 associated with the processing program information RC11 includes throughput c1 to cJ, and the measured throughput information EM12 associated with the processing program information RC12 includes throughput d1 to dJ.

[0106] Next, refer to Figure 4 , Figure 8 as well as Figure 9 (a) in Figure 9 Section (c) provides a more detailed explanation of the thickness prediction unit 211. For example... Figure 4 and Figure 8 As shown, the thickness prediction unit 211 calculates the processing time Tk for each of the multiple positions Lk in the radial direction RD of the substrate W, based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the measured processing amount information EMn associated with the nozzle NZ1. "k" represents an integer greater than or equal to 0.

[0107] Specifically, the thickness prediction unit 211 calculates the processing time Tk when the thickness at each of the multiple locations Lk on the substrate W becomes the target thickness value TG based on equation (1). In equation (1), Mk represents the measured thickness at location Lk on the substrate W, TG represents the target thickness value of the substrate W, and Ek represents the processing amount at location Lk on the substrate WA. The measured value Mk at location Lk on the substrate W is the measured value included in the measured thickness information MG. The processing amount Ek at location Lk on the substrate WA is the processing amount included in the measured processing amount information EMn. "k" represents an integer greater than or equal to 0. Furthermore, in equation (1), Ek may also represent the processing amount per unit time at location Lk on the substrate WA. In this case, the processing amount included in the measured processing amount information EMn also represents the processing amount per unit time.

[0108] Tk=(Mk-TG) / Ek…(1)

[0109] Figure 9 Figure (a) is a graph showing an example of the processing time Tk calculated by equation (1). The horizontal axis represents the position Lk (e.g., mm) on the substrate W from the center CT of the substrate W along the radial direction RD of the substrate W. This point is also related to the following... Figure 9 (b) and Figure 9 The horizontal axis of (c) is the same. The vertical axis represents the processing time Tk.

[0110] like Figure 9 As shown in (a), the thickness prediction unit 211 selects the shortest processing time Tx from multiple processing times Tk calculated for multiple locations Lk of the substrate W. Figure 9 In example (a), the shortest processing time Tx is the processing time T2 at position L2 (=2mm).

[0111] Furthermore, the thickness prediction unit 211 calculates the predicted thickness information PTn based on the measured thickness information MG of the substrate W, the measured processing amount information EMn associated with the nozzle NZ1, and the shortest processing time Tx.

[0112] Specifically, the thickness prediction unit 211 calculates the predicted value Pk of the processed thickness at multiple locations Lk in the radial direction RD of the substrate W based on equation (2). "k" represents an integer greater than or equal to 0. The multiple predicted values ​​Pk at multiple locations Lk of the substrate W constitute the predicted thickness information PTn.

[0113] Pk=Mk-(Ek×Tx)…(2)

[0114] Figure 9 In Figure (b), the graph represents the predicted value Pk of the processed thickness of the substrate W calculated by equation (2). The vertical axis represents the predicted value Pk of the thickness of the substrate W.

[0115] exist Figure 9 In example (b), the predicted value Px (=P2) at position L2 (=2mm) among the multiple predicted values ​​Pk is consistent with the target thickness value TG. Moreover, all predicted values ​​Pk are above the target thickness value TG. The reason for this is that, as shown in equation (2), the predicted values ​​Pk for all thicknesses are calculated based on the shortest processing time Tx.

[0116] Figure 9 (c) in the graph represents the difference DFk (=Pk-TG) between the predicted thickness value Pk and the target thickness value TG. k represents an integer greater than 0. The vertical axis represents the difference DFk. Figure 9 As shown in (c), at all positions Lk, the difference DFk is above 0. Figure 9 In the example of (c) in FIG. 10, the difference value DF2 at the position L2 (= 2 mm) is 0. The reason for this is that, as shown in (a) in FIG. 10, the processing time T2 at the position L2 (= 2 mm) is selected as the shortest processing time Tx. Figure 9 In the example of (c) in FIG. 10, the difference value DF2 at the position L2 (= 2 mm) is 0. The reason for this is that, as shown in (a) in FIG. 10, the processing time T2 at the position L2 (= 2 mm) is selected as the shortest processing time Tx.

[0117] As described above with reference to (a) to (c) in FIG. 10, according to the present embodiment, the thickness prediction unit 211 calculates the predicted thickness information PTn based on the shortest processing time Tx among the plurality of processing times Tk. Therefore, the predicted values Pk of the thicknesses at the positions Lk can be calculated in a range in which all of the predicted values Pk of the thicknesses included in the predicted thickness information PTn become the target thickness value TG or more. As a result, when the substrate W is processed based on the processing recipe information RCn corresponding to the predicted thickness information PTn selected by the evaluation unit 212, it is possible to suppress the occurrence of a portion in which the thickness of the substrate W is less than the target thickness value TG. That is, it is possible to suppress the substrate W from being processed excessively. Figure 9 Figure 9 Next, the prescribed evaluation method performed by the evaluation unit 212 will be described with reference to (a) to (c) in FIG. 10.

[0118] The horizontal axis and the vertical axis of (a) to (c) in FIG. 10 are the same as the horizontal axis and the vertical axis of FIG. 9, respectively. In addition, "n" indicates any one of an integer of 1 or more. Figure 12 Figure 10 The prescribed evaluation method of the present embodiment is a method of evaluating the closeness of the predicted thickness pattern PNn represented by the predicted thickness information PTn to flatness. Specifically, the prescribed evaluation method includes at least one of a first evaluation method, a second evaluation method, and a third evaluation method. Figure 12 Figure 6 The first evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness according to an index representing the degree of unevenness of the predicted thickness pattern PNn. In the present embodiment, it is possible to easily evaluate the degree of flatness of the predicted thickness pattern PNn from the viewpoint of "the degree of unevenness of the predicted thickness pattern PNn" by the first evaluation method. The first evaluation method includes at least one of a first method, a second method, a third method, and a fourth method. The first method to the fourth method will be described later.

[0119] The prescribed evaluation method of the present embodiment is a method of evaluating the closeness of the predicted thickness pattern PNn represented by the predicted thickness information PTn to flatness. Specifically, the prescribed evaluation method includes at least one of a first evaluation method, a second evaluation method, and a third evaluation method.

[0120] The first evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn represented by the predicted thickness information PTn to flatness. Specifically, the prescribed evaluation method includes at least one of a first evaluation method, a second evaluation method, and a third evaluation method.

[0121] ​​​The second evaluation method evaluates the degree of closeness of the predicted thickness pattern to flatness based on the number of predicted values ​​among multiple predicted values ​​constituting the predicted thickness pattern PNn that are close to the target thickness value TG of the substrate W. In this embodiment, the flatness of the predicted thickness pattern PNn can be easily evaluated from the viewpoint of "the number of predicted values ​​that are close to the target thickness value TG of the substrate W" using the second evaluation method. The second evaluation method includes at least one of the first method and the second method. The first method and the second method will be described later.

[0122] The third evaluation method is a method for evaluating the degree of proximity of the predicted thickness pattern PNn to flatness based on an index representing the proximity of the tilt of the predicted thickness pattern PNn to zero. In this embodiment, the flatness of the predicted thickness pattern PNn can be easily evaluated from the viewpoint of "the proximity of the tilt of the predicted thickness pattern PNn to zero" using the third evaluation method. The third evaluation method includes at least one of the first method and the second method. The first method and the second method will be described later.

[0123] First, refer to Figure 10 (a) in Figure 10 Section (d) describes the first to fourth methods of the first evaluation method.

[0124] Figure 10 (a) in the figure represents the first method of the first evaluation method. Figure 10 The diagram shown in (a) illustrates the predicted thickness pattern PNn represented by the predicted thickness information PTn and the first evaluation line Va. The first evaluation line Va is a straight line tangent to the predicted thickness pattern PNn from the side greater than the predicted thickness pattern PNn. That is, the first evaluation line Va is a straight line passing through the protrusions A1 and A2 in the predicted thickness pattern PNn in the direction of increasing predicted value.

[0125] The first evaluation method uses the difference df, obtained by subtracting the predicted value constituting the predicted thickness pattern PNn from the value on the first evaluation line Va, as an index to evaluate the degree of closeness between the predicted thickness pattern PNn and flatness. Specifically, in the first method, the difference df is calculated for each of multiple positions on the radial direction RD of the substrate W. Moreover, the maximum difference Qa among the multiple difference df corresponding to the multiple positions on the substrate W is used as an index to evaluate the degree of closeness between the predicted thickness pattern PNn and flatness. The smaller the maximum difference Qa, the closer the predicted thickness pattern PNn is to flatness.

[0126] Specifically, the evaluation section 212 calculates the first evaluation straight line Va, the plurality of difference values df, and the maximum difference value Qa for each of the plurality of predicted thickness patterns PNn represented by the plurality of predicted thickness information PTn. Then, the evaluation section 212 determines the minimum maximum difference value Qa among the plurality of maximum difference values Qa corresponding to the plurality of predicted thickness patterns PNn. Further, the evaluation section 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the minimum maximum difference value Qa from the plurality of predicted thickness information PTn.

[0127] As explained above with reference to (a) of FIG. 10, according to the first method of the first evaluation method of the present embodiment, it is possible to evaluate the predicted thickness pattern PNn based on the first evaluation straight line Va simply and with good accuracy. Figure 10

[0128] Figure 10 (b) of FIG. 11 is a graph showing the second method of the first evaluation method. Figure 10 The graph shown in (b) of FIG. 11 shows the predicted thickness pattern PNn and the second evaluation straight line Vb. The second evaluation straight line Vb is a straight line tangent to the predicted thickness pattern PNn from the side smaller than the predicted thickness pattern PNn. That is, the second evaluation straight line Vb is a straight line passing through the convex point A3 and the convex point A4 in the predicted thickness pattern PNn in the direction in which the predicted value decreases.

[0129] The second method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness using the difference value df obtained by subtracting the value on the second evaluation straight line Vb from the predicted value constituting the predicted thickness pattern PNn as an index. Specifically, in the second method, the difference value df is calculated for each of the plurality of positions on the radial direction RD of the substrate W. Further, the maximum difference value Qb among the plurality of difference values df corresponding to the plurality of positions of the substrate W is used as an index to evaluate the closeness of the predicted thickness pattern PNn to flatness. The smaller the maximum difference value Qb, the closer the predicted thickness pattern PNn is to flatness.

[0130] Specifically, the evaluation section 212 calculates the second evaluation straight line Vb, the plurality of difference values df, and the maximum difference value Qb for each of the plurality of predicted thickness patterns PNn represented by the plurality of predicted thickness information PTn. Then, the evaluation section 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the minimum maximum difference value Qb from the plurality of predicted thickness information PTn, similarly to the first method of the first evaluation method.

[0131] As explained above with reference to (a) of FIG. 10, according to the first method of the first evaluation method of the present embodiment, it is possible to evaluate the predicted thickness pattern PNn based on the first evaluation straight line Va simply and with good accuracy. Figure 10 ​As explained in (b) in FIG. 8, according to the second method of the first evaluation method of the present embodiment, the predicted thickness pattern PNn can be evaluated simply and with good precision based on the second evaluation straight line Vb.

[0132] Figure 10 (c) in FIG. 8 is a graph showing the third method of the first evaluation method. Figure 10 The predicted thickness pattern PNn and the third evaluation straight line Vc are shown in the graph shown in (c) in FIG. 8. The third evaluation straight line Vc is an approximate straight line of the predicted thickness pattern PNn obtained by the least square method.

[0133] The third method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness by taking as an index a difference df obtained by subtracting a value on the third evaluation straight line Vc from a predicted value constituting the predicted thickness pattern PNn. Specifically, in the third method, a first difference Qc which is a value obtained by subtracting a value on the third evaluation straight line Vc from a maximum predicted value constituting the predicted thickness pattern PNn, and a second difference Qd which is a value obtained by subtracting a value on the third evaluation straight line Vc from a minimum predicted value constituting the predicted thickness pattern PNn are calculated. Further, the sum SM of the absolute value of the first difference Qc and the absolute value of the second difference Qd is taken as an index to evaluate the closeness of the predicted thickness pattern PNn to flatness. The smaller the sum SM, the closer the predicted thickness pattern PNn is to flatness.

[0134] Specifically, the evaluation section 212 calculates the third evaluation straight line Vc, the first difference Qc, the second difference Qd, and the sum SM for each of the plurality of predicted thickness patterns PNn represented by the plurality of predicted thickness information PTn. Then, the evaluation section 212 determines the smallest sum SM among the plurality of sums SM corresponding to the plurality of predicted thickness patterns PNn. Further, the evaluation section 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the smallest sum SM from among the plurality of predicted thickness information PTn.

[0135] As explained above with reference to Figure 10 As explained in (c) in FIG. 8, according to the third method of the first evaluation method of the present embodiment, the predicted thickness pattern PNn can be evaluated simply and with good precision based on the third evaluation straight line Vc.

[0136] Figure 10 (d) in FIG. 8 is a graph showing the fourth method of the first evaluation method. Figure 10 The predicted thickness pattern PNn and the fourth evaluation straight line Vd are shown in the graph shown in (d) in FIG. 8. The fourth evaluation straight line Vd is a straight line representing the target thickness value TG of the substrate W.

[0137] The fourth method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness using a difference df obtained by subtracting a value on the fourth evaluation straight line Vd from a value constituting the predicted thickness pattern PNn as an index. Specifically, in the fourth method, the difference df is calculated for each of a plurality of positions on the radial direction RD of the substrate W. Also, the closeness of the predicted thickness pattern PNn to flatness is evaluated using a maximum difference Qe among the plurality of differences df as an index. The smaller the maximum difference Qe, the closer the predicted thickness pattern PNn is to flatness.

[0138] Specifically, the evaluation section 212 calculates the fourth evaluation straight line Vd, the plurality of differences df, and the maximum difference Qe for each of the plurality of predicted thickness patterns PNn represented by the plurality of predicted thickness information PTn. Then, the evaluation section 212 determines the minimum maximum difference Qe among the plurality of maximum differences Qe corresponding to the plurality of predicted thickness patterns PNn. Further, the evaluation section 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the minimum maximum difference Qe from the plurality of predicted thickness information PTn.

[0139] As explained above with reference to (d) in Figure 10 , according to the fourth method of the first evaluation method of the present embodiment, the closeness of the predicted thickness pattern PNn to flatness can be evaluated based on the fourth evaluation straight line Vd simply and with good accuracy.

[0140] Next, the first and second methods of the second evaluation method are explained with reference to (a) in Figure 11 and (b) in Figure 11 .

[0141] Figure 11 (a) in Figure 11 is a graph showing the first method of the second evaluation method. The graph shown in (a) in Figure 11 shows the predicted thickness pattern PNn, a fifth evaluation straight line Ve, and an allowable range RG. The fifth evaluation straight line Ve is a straight line representing the target thickness value TG of the substrate W. The allowable range RG is a range of unevenness that can be tolerated in the substrate W. Specifically, the allowable range RG includes an upper limit value TH and the target thickness value TG as a lower limit value.

[0142] The first method of the second evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness using the number NM of predicted values existing in the allowable range RG including the fifth evaluation straight line Ve among the plurality of predicted values constituting the predicted thickness pattern PNn as an index. The greater the number NM of predicted values existing in the allowable range RG, the closer the predicted thickness pattern PNn is to flatness.

[0143] Specifically, the evaluation unit 212 counts the number NM of predicted values ​​existing within the allowable range RG for each of the multiple predicted thickness patterns PNn represented by multiple predicted thickness information PTn, thereby obtaining count information representing the number NM. Then, the evaluation unit 212 determines the count information representing the largest number NM among the multiple count information corresponding to the multiple predicted thickness patterns PNn. Furthermore, the evaluation unit 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the count information representing the largest number NM from the multiple predicted thickness information PTn.

[0144] The above is for reference only. Figure 11 As illustrated in (a) of this embodiment, the first method of the second evaluation method can easily and accurately evaluate the predicted thickness pattern PNn based on the allowable range RG including the fifth evaluation line Ve.

[0145] Figure 11 (b) in the figure is a diagram illustrating the second evaluation method. Figure 11 The graph shown in (b) illustrates the predicted thickness pattern PNn and the sixth evaluation line Vf. The sixth evaluation line Vf is a straight line representing the target thickness value TG of the substrate W.

[0146] The second evaluation method uses the difference df obtained by subtracting the value on the sixth evaluation line Vf from each of the multiple predicted values ​​constituting the predicted thickness pattern PNn as an index to evaluate the degree of closeness of the predicted thickness pattern PNn to flatness. Specifically, in the second method, the difference df is calculated for each of multiple positions on the radial direction RD of the substrate W. Furthermore, the average value AV of the multiple differences df corresponding to each of the multiple positions on the substrate W is calculated. The smaller the average value AV, the closer the predicted thickness pattern PNn is to flatness.

[0147] Specifically, the evaluation unit 212 calculates multiple differences df and an average value AV for each of the multiple predicted thickness patterns PNn represented by multiple predicted thickness information PTn. Then, the evaluation unit 212 determines the minimum average value AV among the multiple average values ​​AV corresponding to the multiple predicted thickness patterns PNn. Furthermore, the evaluation unit 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the minimum average value AV from the multiple predicted thickness information PTn.

[0148] The above is for reference only. Figure 11 As described in (b) of this embodiment, the second method of the second evaluation method can easily and accurately evaluate the predicted thickness pattern PNn based on the sixth evaluation line Vf.

[0149] Next, the first method and the second method of the third evaluation method are explained with reference to (a) of FIG. 12 and (b) of FIG. 13, respectively. Figure 12 Figure 12 (a) of FIG. 12 is a graph showing the first method of the third evaluation method.

[0150] In the graph shown in (a) of FIG. 12, the predicted thickness pattern PNn, a seventh evaluation straight line Vg, and an eighth evaluation straight line Vh are shown. The seventh evaluation straight line Vg is an approximate straight line of the predicted thickness pattern PNn obtained by the least square method. The eighth evaluation straight line Vh is a straight line indicating a fixed value. Figure 12 Figure 12 The first method of the third evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness by using the inclination of the seventh evaluation straight line Vg with respect to the eighth evaluation straight line Vh as an index. Specifically, in the first method, the closeness of the predicted thickness pattern PNn to flatness is evaluated by using an inclination angle θa indicating the inclination of the seventh evaluation straight line Vg with respect to the eighth evaluation straight line Vh as an index. The smaller the inclination angle θa, the closer the predicted thickness pattern PNn is to flatness. In this case, the form of expression of the inclination angle θa is not particularly limited.

[0151] Specifically, the evaluation section 212 calculates the seventh evaluation straight line Vg and the inclination angle θa for each of the plurality of predicted thickness patterns PNn indicated by the plurality of predicted thickness information PTn. Then, the evaluation section 212 determines the smallest inclination angle θa from among the plurality of inclination angles θa corresponding to the plurality of predicted thickness patterns PNn. Further, the evaluation section 212 selects the predicted thickness information PTn indicating the predicted thickness pattern PNn corresponding to the smallest inclination angle θa from among the plurality of predicted thickness information PTn.

[0152] As explained above with reference to (a) of FIG. 12, according to the first method of the third evaluation method of the present embodiment, the predicted thickness pattern PNn can be evaluated simply and with good accuracy on the basis of the seventh evaluation straight line Vg and the eighth evaluation straight line Vh.

[0153] As explained above with reference to (a) of FIG. 12, according to the first method of the third evaluation method of the present embodiment, the predicted thickness pattern PNn can be evaluated simply and with good accuracy on the basis of the seventh evaluation straight line Vg and the eighth evaluation straight line Vh. Figure 12

[0154] (b) of FIG. 13 is a graph showing the second method of the third evaluation method. Figure 12 In the graph shown in (b) of FIG. 13, the predicted thickness pattern PNn, a plurality of evaluation vectors VT, and a ninth evaluation straight line Vi are shown. The plurality of evaluation vectors VT respectively indicate the inclination of the predicted thickness pattern PNn at each position of the radial direction RD of the substrate W. The ninth evaluation straight line Vi is an arbitrary straight line having zero inclination. Figure 12 The second method of the third evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness by using the plurality of evaluation vectors VT as an index. Specifically, in the second method, the closeness of the predicted thickness pattern PNn to flatness is evaluated by using the plurality of evaluation vectors VT as an index. The smaller the plurality of evaluation vectors VT, the closer the predicted thickness pattern PNn is to flatness. In this case, the form of expression of the plurality of evaluation vectors VT is not particularly limited.

[0155] ​The second method of the third evaluation method is a method of evaluating the closeness of the predicted thickness pattern PNn to flatness, using the inclination of the predicted thickness pattern PNn at each position in the radial direction RD of the substrate W as an index. Specifically, in the second method, an evaluation vector VT at each position is calculated corresponding to the predicted value at each position in the radial direction RD of the substrate W. The evaluation vector VT is from the predicted value of one of the two adjacent predicted values toward the predicted value of the other. In addition, the evaluation vector VT takes the predicted value of one of the two adjacent predicted values as a starting point and the predicted value of the other as an ending point. The inclination of the evaluation vector VT is represented by the inclination angle θb of the evaluation vector VT with respect to the ninth evaluation straight line Vi. The form of expression of the inclination angle θb is not particularly limited. Furthermore, the evaluation vector VTM having the largest inclination angle θmx among the plurality of evaluation vectors VT is taken as an index to evaluate the closeness of the predicted thickness pattern PNn to flatness. The smaller the largest inclination angle θmx, the closer the predicted thickness pattern PNn is to flatness.

[0156] Specifically, the evaluation section 212 calculates a plurality of evaluation vectors VT, a plurality of inclination angles θb, and a largest inclination angle θmx for each of a plurality of predicted thickness patterns PNn represented by a plurality of predicted thickness information PTn. Then, the evaluation section 212 determines the smallest largest inclination angle θmx among a plurality of largest inclination angles θmx corresponding to a plurality of predicted thickness patterns PNn. Furthermore, the evaluation section 212 selects the predicted thickness information PTn representing the predicted thickness pattern PNn corresponding to the smallest largest inclination angle θmx from among a plurality of predicted thickness information PTn.

[0157] As explained above with reference to (b) in Figure 12 , according to the second method of the third evaluation method of the present embodiment, the predicted thickness pattern PNn can be evaluated simply and with good accuracy based on the plurality of evaluation vectors VT.

[0158] Next, the processing of the end region EA of the substrate W will be explained with reference to Figure 4 , Figure 5 , and Figure 13 . As shown in Figure 5 , generally, the end region EA of the substrate W is sharply projected compared to the inner region IA. Therefore, it is preferable that, in addition to the scanning processing of the entire region (IA + EA) of the substrate W, the end region EA is individually processed. Hereinafter, this preferable example will be explained. In this case, as in the case explained with reference to Figure 6 and Figure 7 , as one example, the case where the evaluation section 212 selects the predicted thickness information PT3 from among a plurality of predicted thickness information PT1 to PT3 will be explained.

[0159] Figure 13is a graph showing predicted values of the thickness after processing in the end region EA of the substrate W. Figure 13 the horizontal axis and the vertical axis of Figure 6 are the same as those of Figure 13 In Figure 13 , the end region EA (Rb [mm] ~ R [mm]) of the substrate W is shown on the horizontal axis. As shown in , the predicted thickness information PT3 includes 2 or more predicted values of the thickness in the end region EA of the substrate W.

[0160] Figure 4 As shown in Figure 13 , the end region processing section 214 calculates an end region processing time (hereinafter, referred to as "end region processing time TE") based on a maximum value Pm of the predicted values in the end region EA of the substrate W from among the plurality of predicted values included in the predicted thickness information PT3 selected by the evaluation section 212. The end region processing time TE is a processing time for the end region EA of the substrate W, and indicates a processing time in a state where the ejection position of the processing liquid is fixed.

[0161] The control section 21 controls the nozzle moving section 9 so that the nozzle NZ1 is positioned at a position directly above the end region EA of the substrate W (for example, the turnaround position TR1 of Figure 2 ). As a result, the nozzle NZ1 is stationary at the position directly above the end region EA of the substrate W. Also, the control section 21 controls the valve V1 so that the nozzle NZ1 ejects the processing liquid toward the end region EA of the substrate W for the end region processing time TE. As a result, the nozzle NZ1 remains stationary at the position directly above the end region EA of the substrate W, and ejects the processing liquid toward the end region EA of the substrate W that is rotating for the end region processing time TE. Thus, according to the present embodiment, it is possible to concentrate processing on the end region EA of the substrate W, and make the surface SF of the substrate W more planar.

[0162] Specifically, the end region processing section 214 calculates the end region processing time TE based on the maximum value Pm of the predicted values in the end region EA of the substrate W, the target thickness value TG of the substrate W, and a processing coefficient PC. The processing coefficient PC is set in advance for the control section 21, and indicates a processing amount per unit time on the substrate using the processing liquid. Thus, according to the present embodiment, it is possible to easily calculate the end region processing time TE by using the processing coefficient PC. More specifically, the end region processing section 214 calculates the end region processing time TE based on Equation (3).

[0163] TE = (Pm - TG) / PC … (3)

[0164] Next, the processing condition determination method and the substrate processing method according to the present embodiment will be described with reference to Figure 4 and Figures 14-17 . Figure 14 is a flowchart showing a substrate processing method of the present embodiment. As shown in Figure 14 , the substrate processing method includes processes S1 to S9. The substrate processing method is executed by the substrate processing apparatus 100 for each substrate W. The processes S3 and S4 constitute a processing condition determination method of the present embodiment.

[0165] As shown in Figure 4 and Figure 14 , in the process S1, the control section 21 of the substrate processing apparatus 100 controls the rotary chuck 3 in a manner to hold the substrate W. As a result, the rotary chuck 3 holds the substrate W.

[0166] Next, in the process S2, the control section 21 controls the thickness measurement section 15 in a manner to measure the thickness of the substrate W. As a result, the thickness measurement section 15 measures the thickness of the substrate W at each position along the radial direction RD of the substrate W before processing with the processing liquid. Then, the thickness measurement section 15 outputs the measurement thickness information MG including the measurement values of the thickness at each position of the substrate W to the control section 21.

[0167] Next, in the process S3, the control section 21 determines the processing recipe information RCn that can be used when processing the substrate W while moving the ejection position of the processing liquid along the radial direction RD of the substrate W, from among the plurality of processing recipe information RCn.

[0168] Next, in the process S4, the control section 21 calculates the end region processing time TE when processing the end region EA of the substrate W.

[0169] Next, in the process S5, the control section 21 controls the valve V1 and the nozzle moving section 9 in a manner that the nozzle NZ1 performs scanning processing on the substrate W, based on the processing recipe information RCn determined in the process S3. As a result, the nozzle NZ1 processes the entire region (the inner region IA + the end region EA) of the substrate W with the processing liquid while moving the ejection position of the processing liquid along the radial direction RD of the substrate W. That is, the nozzle NZ1 ejects the processing liquid to the entire region of the substrate W.

[0170] Next, in the process S6, the control section 21 controls the valve V1 and the nozzle moving section 9 in a manner that the nozzle NZ1 processes the end region EA of the substrate W in a state where the ejection position of the processing liquid is fixed, within the end region processing time TE calculated in the process S4. As a result, the nozzle NZ1 processes the end region EA of the substrate W in a state where the ejection position of the processing liquid is fixed, within the end region processing time TE. That is, the nozzle NZ1 ejects the processing liquid to the end region EA of the substrate W in a state of being kept stationary, within the end region processing time TE.

[0171] Next, in step S7, the control section 21 controls the valve V2 in such a manner that the nozzle 11 ejects the rinsing liquid toward the substrate W. As a result, the nozzle 11 ejects the rinsing liquid.

[0172] Next, in step S8, the control section 21 controls the rotation motor 5 in such a manner that the substrate W is rotated. As a result, the substrate W is rotated by the rotation motor 5 rotating the chuck 3. The substrate W is dried by the rotation of the substrate W.

[0173] Next, in step S9, the control section 21 controls the transfer robot in such a manner that the substrate W is taken out of the chamber 2. As a result, the transfer robot takes out the substrate W from the chamber 2. After step S9, the processing by the substrate processing method is ended.

[0174] In the substrate product manufacturing method of the present embodiment, the substrate W is processed by the substrate processing method including steps S1 to S9, thereby manufacturing the processed substrate W, i.e., the substrate product. In addition, Figure 4 The computer program 232 illustrated causes the control device 19 to execute the substrate processing method including steps S1 to S9. Further, Figure 4 The computer program 232 illustrated can also cause the control device 19 to execute the processing condition determination method including steps S3 and S4. The control device 19 corresponds to one example of a "computer".

[0175] Further, step S6 can also be executed before step S5. In addition, in step S6, a nozzle NZ2 different from the nozzle NZ1 used in step S5 can be used. Further, the substrate processing method can not include steps S4 and S6.

[0176] Next, with reference to Figure 4 and Figure 15 , step S3 of Figure 14 will be described. Figure 15 is a flowchart of step S3 of Figure 14 . As illustrated in Figure 15 , step S3 includes steps S31 to S33.

[0177] As illustrated in Figure 4 and Figure 15As shown, in process S31, the thickness prediction unit 211 of the control unit 21 calculates predicted thickness information PTn, which includes predicted values ​​of the processed thickness at multiple locations on the radial direction RD of the substrate W, based on the measured thickness information MG, which includes measured values ​​of the thickness at multiple locations on the substrate W. For each of the multiple processing program information RCn, the predicted values ​​of the processed thickness at multiple locations on the substrate W are calculated. That is, the thickness prediction unit 211 calculates multiple predicted thickness information PTn. The measured values ​​included in the measured thickness information MG represent the thickness of the substrate W measured along the radial direction RD of the substrate W before processing the substrate W with the processing liquid.

[0178] Specifically, in process S31, the thickness prediction unit 211 calculates predicted thickness information PTn, which includes the predicted value of the processed thickness at each position from the center CT to the edge EG of the substrate W, based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the measured processing amount information EMn.

[0179] Next, in process S32, the evaluation unit 212 of the control unit 21 evaluates the multiple predicted thickness information PTn calculated for the multiple processing program information RCn according to a prescribed evaluation method, and selects the predicted thickness information PTn from the multiple predicted thickness information PTn. In this case, the evaluation unit 212 can evaluate the multiple predicted thickness information PTn by one of the following methods, or by combining two or more of the following methods to evaluate the multiple predicted thickness information PTn, namely, the first to fourth methods of the first evaluation method included in the prescribed evaluation method, the first and second methods of the second evaluation method included in the prescribed evaluation method, and the first and second methods of the third evaluation method included in the prescribed evaluation method.

[0180] Next, in process S33, the determination unit 213 of the control unit 21 determines the processing program information RCn corresponding to the predicted thickness information PTn selected in process S32. After process S33, the processing of determining the processing program information RCn ends, and processing enters... Figure 14 Process S4.

[0181] Next, refer to Figure 4 and Figure 16 ,right Figure 15 The process S31 will be explained. Figure 16 It means Figure 15 The flowchart for process S31. (See attached flowchart.) Figure 16 As shown, process S31 includes processes S311 to S314.

[0182] like Figure 4 and Figure 16As shown, in process S311, the thickness prediction unit 211 calculates the processing time Tk for each of the multiple positions in the radial direction RD of the substrate W when the thickness at each position is equal to the target thickness value TG, based on the measured thickness information MG of the substrate W, the target thickness value TG of the substrate W, and the measured processing amount information EMn. Specifically, the thickness prediction unit 211 calculates the processing time Tk based on the above formula (1).

[0183] Next, in process S312, the thickness prediction unit 211 selects the shortest processing time Tx from multiple processing times Tk calculated for multiple positions of the radial RD of the substrate W.

[0184] Next, in process S313, the thickness prediction unit 211 calculates the predicted thickness information PTn based on the measured thickness information MG of the substrate W, the measured processing amount information EMn, and the shortest processing time Tx. Specifically, the thickness prediction unit 211 calculates the predicted thickness information PTn (specifically, multiple predicted values ​​Pk) based on the above formula (2).

[0185] Next, in process S314, the thickness prediction unit 211 determines whether the processing of processes S311 to S313 has been completed for all measured processing quantity information EMn associated with nozzle NZ1.

[0186] If a negative decision (No) is made in process S314, the process proceeds to process S311.

[0187] If a positive decision (Yes) is made in process S314, the processing of calculating multiple predicted thickness information PTn ends, and the process proceeds to... Figure 15 Process S32.

[0188] Next, refer to Figure 4 and Figure 17 ,right Figure 14 The process S4 will be explained. Figure 17 It is shown Figure 14 The flowchart for process S4. (See example.) Figure 17 As shown, process S4 includes processes S41 to S43.

[0189] like Figure 4 and Figure 17 As shown, in process S41, the end area processing unit 214 of the control unit 21... Figure 15 In process S32, among the predicted thickness information PTn selected, the predicted thickness values ​​of the processed thickness at two or more locations in the end region EA of the substrate W are obtained.

[0190] Next, in step S42, the end region processing section 214 selects the maximum value Pm from the predicted values of the processed thickness at two or more positions in the end region EA of the substrate W acquired in step S41.

[0191] Next, in step S43, the end region processing section 214 calculates the end region processing time TE based on the maximum value Pm of the predicted values in the end region EA of the substrate W selected in step S42, the target thickness value TG of the substrate W, and the processing coefficient PC. Specifically, the end region processing section 214 calculates the end region processing time TE based on the above-described equation (3). After step S43, the processing of calculating the end region processing time TE is completed, and the processing proceeds to step S5. Figure 14

[0192] The above describes the embodiments of the present application with reference to the drawings. However, the present application is not limited to the above-described embodiments, and can be implemented in various modes without departing from the gist thereof. In addition, the plurality of components disclosed in the above-described embodiments can be appropriately changed. For example, a certain component among all the components shown in a certain embodiment can be added to the components of another embodiment, or several components among all the components shown in a certain embodiment can be deleted from the embodiment.

[0193] In addition, the drawings schematically show each component on the main body for easy understanding of the application, and the thickness, length, number, interval, and the like of each component shown in the drawings are sometimes different from the actual ones for easy drawing. In addition, the structure of each component shown in the above-described embodiments is one example, and is not particularly limited, and various changes can be made without departing from the gist of the present application substantially, which is self-evident.

[0194] (1) In the present embodiment described with reference to Figures 1 to 17 The substrate W is a bare substrate, but the substrate W can also be a substrate after film formation.

[0195] (2) In the present embodiment described with reference to Figures 1 to 17 In the case where the processing with the processing liquid is etching processing, the "processing liquid" can be changed to "etching liquid", and the "processing amount" can be changed to "etching amount".

[0196] (3) Figure 1 The processing device 1 shown in FIG. 1 can also not have the thickness measuring section 15 and the probe moving section 17. In this case, the thickness of the substrate W is measured by the thickness measuring section 15 and the probe moving section 17 disposed outside the processing device 1. In addition, Figure 1 ​The substrate processing apparatus 100 shown can also not have the thickness measuring section 15 and the probe moving section 17. In this case, the thickness of the substrate W is measured using a thickness measuring section 15 and a probe moving section 17 disposed outside the substrate processing apparatus 100. That is, the position at which the thickness of the substrate W is measured is not particularly limited, as long as the thickness of the substrate W can be measured before processing.

[0197] Industrial Applicability

[0198] The present application relates to a processing condition determination method, a substrate processing method, a substrate product manufacturing method, a computer program, a storage medium, a processing condition determination device, and a substrate processing apparatus, and has industrial applicability.

[0199] Explanation of Reference Numerals

[0200] 1: processing apparatus,

[0201] 19: control device (processing condition determination device, computer),

[0202] 23: storage section (storage medium),

[0203] 100: substrate processing apparatus,

[0204] 211: thickness prediction section,

[0205] 212: evaluation section,

[0206] 213: determination section,

[0207] 214: end region processing section,

[0208] 232: computer program,

[0209] W: substrate.

Claims

1. A processing condition determination method of determining a processing condition that can be used when processing a target substrate while moving a processing liquid from a position of ejection of the processing liquid along a radial direction of the target substrate as a substrate to be processed, from among a plurality of processing conditions, wherein, comprises the following steps of: calculating, for each of the plurality of processing conditions, prediction thickness information including predicted values of thicknesses of the object substrate at a plurality of positions in a radial direction of the object substrate after processing, based on measurement thickness information including measured values of thicknesses of the object substrate at the plurality of positions in the radial direction of the object substrate, evaluating a plurality of the prediction thickness information respectively calculated for the plurality of processing conditions according to a prescribed evaluation method which is a method of evaluating closeness to flatness of a predicted thickness pattern represented by the prediction thickness information, and selecting prediction thickness information from among the plurality of prediction thickness information, and determining the processing condition corresponding to the selected prediction thickness information; the measured values included in the measurement thickness information represent thicknesses of the object substrate measured along the radial direction of the object substrate before processing the object substrate with the processing liquid.

2. The processing condition determination method according to claim 1, wherein further comprising the following steps of: calculating an end region processing time based on a maximum value of the predicted values in an end region of the radial direction of the object substrate among a plurality of the predicted values included in the selected prediction thickness information; the end region processing time represents a processing time for the end region of the object substrate, and represents a processing time in a state where an ejection position of the processing liquid is fixed.

3. The processing condition determination method according to claim 2, wherein in the step of calculating the end region processing time, the end region processing time is calculated based on the maximum value of the predicted values in the end region of the object substrate, a target thickness value of the object substrate, and a processing coefficient, the processing coefficient is set in advance and represents a processing amount of a substrate per unit time with the processing liquid.

4. The processing condition determination method according to claim 1 or 2, wherein in the step of calculating the prediction thickness information, the prediction thickness information is calculated based on the measurement thickness information of the object substrate, a target thickness value of the object substrate, and measured processing amount information including processing amounts at a plurality of positions in the radial direction of a substrate measured in advance along the radial direction of the substrate, the processing amounts included in the measured processing amount information represent processing amounts when the substrate is processed according to a processing condition associated with the measured processing amount information among the plurality of processing conditions.

5. The processing condition determination method according to Claim 4, wherein the step of calculating the prediction thickness information includes the following steps of: calculating, for each of the plurality of positions of the object substrate, a processing time when the thickness at each of the plurality of positions of the object substrate becomes the target thickness value, based on the measurement thickness information of the object substrate, the target thickness value of the object substrate, and the measured processing amount information, selecting a shortest processing time from among a plurality of the processing times respectively calculated for the plurality of positions of the object substrate, and The predicted thickness information is calculated based on the measured thickness information of the object substrate, the measured processing amount information, and the shortest processing time.

6. The processing condition determination method according to claim 1 or 2, wherein In the process of selecting the predicted thickness information, the predicted values of the thickness after processing at two or more positions in an inner region of the surface of the object substrate, which is inside an end region in the radial direction, are used to evaluate the plurality of predicted thickness information.

7. The processing condition determination method according to claim 1 or 2, wherein The predicted thickness pattern represents a distribution of predicted values of the thickness in the radial direction of the object substrate, The prescribed evaluation method includes at least one of a first evaluation method, a second evaluation method, and a third evaluation method, The first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness according to an index representing the degree of concave-convex of the predicted thickness pattern, The second evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness according to an index based on the number of predicted values close to a target thickness value of the object substrate among a plurality of predicted values constituting the predicted thickness pattern, The third evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness according to an index representing the closeness of the inclination of the predicted thickness pattern to zero.

8. The processing condition determination method according to claim 7, wherein The first evaluation method includes at least one of a first method, a second method, a third method, and a fourth method, The first method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness using as the index a difference value obtained by subtracting the predicted values constituting the predicted thickness pattern from values on a first evaluation straight line, The first evaluation straight line is a straight line that is tangent to the predicted thickness pattern from a side larger than the predicted thickness pattern, The second method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness using as the index a difference value obtained by subtracting the predicted values constituting the predicted thickness pattern from values on a second evaluation straight line, The second evaluation straight line is a straight line that is tangent to the predicted thickness pattern from a side smaller than the predicted thickness pattern, The third method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness using as the index a difference value obtained by subtracting the predicted values constituting the predicted thickness pattern from values on a third evaluation straight line, The third evaluation straight line is an approximate straight line of the predicted thickness pattern obtained by a least square method, The fourth method of the first evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness using as the index a difference value obtained by subtracting the predicted values constituting the predicted thickness pattern from values on a fourth evaluation straight line, The fourth evaluation straight line is a straight line representing a target thickness value of the object substrate.

9. The processing condition determination method according to claim 7, wherein the second evaluation method includes at least one of a first method and a second method, the first method of the second evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, the number of predicted values existing within an allowable range of a fifth evaluation straight line among the plurality of predicted values constituting the predicted thickness pattern, the fifth evaluation straight line is a straight line indicating the target thickness value of the target substrate, the second method of the second evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, each difference value obtained by subtracting a value on a sixth evaluation straight line from each predicted value among the plurality of predicted values constituting the predicted thickness pattern, the sixth evaluation straight line is a straight line indicating the target thickness value of the target substrate.

10. The processing condition determination method according to claim 7, wherein the third evaluation method includes at least one of a first method and a second method, the first method of the third evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, the inclination of a seventh evaluation straight line with respect to an eighth evaluation straight line, the seventh evaluation straight line is an approximate straight line of the predicted thickness pattern obtained by a least square method, the eighth evaluation straight line is a straight line indicating a fixed value, the second method of the third evaluation method is a method of evaluating the closeness of the predicted thickness pattern to flatness by taking, as the index, the inclination of the predicted thickness pattern at each of the positions in the radial direction of the target substrate.

11. A substrate processing method, wherein, including the following steps: processing the target substrate with the processing liquid while moving the ejection position of the processing liquid along the radial direction of the target substrate based on the processing condition determined by the processing condition determination method according to any one of claims 1 to 10.

12. A method of manufacturing a substrate article, wherein, processing the target substrate with the substrate processing method according to claim 11, thereby manufacturing a substrate product as the processed target substrate.

13. A storage medium storing a computer program for causing a computer to execute the processing condition determination method according to any one of claims 1 to 10.

14. A processing condition determining apparatus that determines a processing condition usable when processing a target substrate while moving a processing liquid along a radial direction of the target substrate as a processing object, from among a plurality of processing conditions, wherein having: a thickness prediction section that calculates, for each of the plurality of processing conditions, predicted thickness information including predicted values of processed thicknesses at the plurality of positions of the target substrate based on measured thickness information including measured values of thicknesses at the plurality of positions in the radial direction of the target substrate, an evaluation section that evaluates a plurality of predicted thickness information calculated for the plurality of processing conditions respectively in accordance with a prescribed evaluation method that is a method of evaluating the closeness of a predicted thickness pattern indicated by the predicted thickness information to flatness, and selects predicted thickness information from among the plurality of predicted thickness information, and a determination section that determines the processing condition corresponding to the selected predicted thickness information. The measured value included in the measured thickness information indicates a thickness of the target substrate measured along a radial direction of the target substrate before the target substrate is processed with the processing liquid.

15. A substrate processing apparatus, wherein, Having: The processing condition determination device according to claim 14, and A processing device that processes the target substrate with the processing liquid while moving a position of ejection of the processing liquid along a radial direction of the target substrate based on the processing condition determined by the processing condition determination device.

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