Method for manufacturing display device using semiconductor light emitting element and self-assembly device therefor

Abstract

According to an embodiment of the present invention, it is characterized in that it includes: (a) a step of placing a semiconductor light emitting element provided with a magnet into a fluid chamber; (b) a step of moving a substrate extending in one direction and including an assembly electrode covered by an insulating layer and an opening that exposes a portion of both ends of the assembly electrode to an assembly position; (c) a step of applying a magnetic force to the semiconductor light emitting element so that the semiconductor light emitting element placed in the fluid chamber moves in one direction; and (d) a step of forming an electric field so that the moved semiconductor light emitting element is placed at a predetermined position on the substrate, wherein in step (d), an electric field is formed by bringing a probe into contact with the assembly electrode exposed through the opening and applying a voltage to each of the assembly electrodes.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a display device using a semiconductor light emitting element having a size of several μm to several tens of μm and a self-assembly device therefor. Background Art

[0002] In recent years, in the field of display technology, in order to achieve large-size displays, liquid crystal displays (LCDs), organic OLED (organic light emitting diode) displays, and micro LED displays have been constantly competing.

[0003] However, LCD has problems such as long response time and low efficiency of light generated by backlight, and OLED (organic light emitting diode) has not only disadvantages of short life and low production yield, but also disadvantages of low efficiency.

[0004] On the other hand, if a semiconductor light-emitting element (micro LED) with a diameter or cross-sectional area of ​​100 μm or less is used in a display, it is possible to provide very high efficiency because the display does not use a polarizing plate, etc. to absorb light. However, since a large display requires millions of semiconductor light-emitting elements, there is a difficulty in requiring a transfer element compared to other technologies.

[0005] Currently, the technologies being developed as transfer processes include pick and place, laser lift-off (LLO) or self-assembly, etc. Among them, the self-assembly method is a method in which the semiconductor light-emitting element finds its position in the fluid by itself, which is the most conducive to the realization of large-screen display devices.

[0006] On the other hand, the self-assembly method includes a method of directly assembling the semiconductor light-emitting element to the final substrate (or wiring substrate) formed with wiring and a method of assembling the semiconductor light-emitting element to the assembly substrate and then transferring it to the final substrate through an additional transfer process.

[0007] From a process perspective, the method of assembling directly to the final substrate is more efficient, and the advantage of using an assembly substrate is that structures for self-assembly can be added without limit, so the two methods are currently used selectively. Summary of the invention

[0008] Problem to be solved

[0009] The object of the present invention is to provide a method for manufacturing a display device composed of semiconductor light-emitting elements that emit red, green and blue light, and in particular, to provide a self-assembly method in which semiconductor light-emitting elements that emit red, green and blue light can be placed at predetermined positions on a substrate by applying voltages to assembly electrodes separately.

[0010] Furthermore, another object of the present invention is to provide a method for manufacturing a display device capable of detecting defects of assembly electrodes during a self-assembly process.

[0011] Another object of the present invention is to provide a self-assembly device used in the method for manufacturing the display device as described above.

[0012] Technical solutions to the problem

[0013] According to an embodiment of the present invention, a method for manufacturing a display device is characterized in that it includes: (a) a step of placing a semiconductor light-emitting element provided with a magnet into a fluid chamber; (b) a step of moving a substrate extending in one direction and including an assembly electrode covered by an insulating layer and an opening through which a portion of both ends of the assembly electrode are exposed to an assembly position; (c) a step of applying a magnetic force to the semiconductor light-emitting element so that the semiconductor light-emitting element placed in the fluid chamber moves in one direction; and (d) a step of forming an electric field so that the moved semiconductor light-emitting element is placed at a predetermined position on the substrate; in step (d), the electric field is formed by bringing a probe into contact with the assembly electrode exposed through the opening and applying a voltage to the assembly electrode alone.

[0014] In this embodiment, the substrate includes: a base portion, on which the assembly electrode is formed; an insulating layer, stacked on the base portion in a manner to cover the assembly electrode; and a partition wall, which is formed along the extension direction of the assembly electrode in a manner overlapping with a portion of the assembly electrode to form a unit for accommodating the semiconductor light-emitting element, and is stacked on the insulating layer, and the opening is formed to penetrate the insulating layer and the partition wall.

[0015] In this embodiment, when two or more semiconductor light emitting elements emitting light of different colors are assembled on the substrate, after the semiconductor light emitting element emitting light of a first color is placed in the fluid chamber in step (a), steps (b) to (d) are performed, and after the semiconductor light emitting element emitting light of the first color remaining in the fluid chamber is removed, the semiconductor light emitting element emitting light of a second color is again placed in the fluid chamber in step (a), and steps (b) to (d) are performed.

[0016] In this embodiment, the assembled electrodes are divided into a plurality of groups according to the light emission colors of the overlapping semiconductor light emitting elements, and voltages are applied to different groups according to the colors of the light emitted by the semiconductor light emitting elements put into the fluid chamber to form an electric field.

[0017] In this embodiment, the step of forming the electric field includes: the step of forming the electric field by applying a voltage to the assembled electrodes belonging to any one of the groups; and the step of maintaining the formed electric field by continuously applying a voltage to the assembled electrodes belonging to any one of the groups, and forming the electric field by applying a voltage to the assembled electrodes belonging to the other group.

[0018] In this embodiment, it also includes: (e) a step of measuring the resistance value of the assembled electrode by bringing a probe into contact with a portion of the two end portions of the assembled electrode exposed through the opening, thereby detecting whether the assembled electrode has a defect; when the measured resistance value is not within a predetermined resistance value range, it is determined that the assembled electrode has a defect.

[0019] In this embodiment, the probe includes: a plurality of first probes, arranged on one end side of the assembled electrode and in contact with one end of the assembled electrode; and a plurality of second probes, arranged on the other end side of the assembled electrode and in contact with the other end of the assembled electrode.

[0020] In this embodiment, the step (e) includes the step of detecting whether a single assembly electrode is short-circuited by measuring the resistance value between two ends of each assembly electrode.

[0021] In this embodiment, the step of detecting whether a single assembled electrode is short-circuited includes: a step of bringing the first probe into contact with the assembled electrode exposed through the opening on one end side of one or more assembled electrodes; a step of bringing the second probe into contact with the assembled electrode exposed through the opening on the other end side of the assembled electrode contacted by the first probe; and a step of measuring the resistance value between the first probe and the second probe of the assembled electrode contacted by the first probe and the second probe.

[0022] In this embodiment, the step (e) includes: a step of detecting whether adjacent assembled electrodes are short-circuited by measuring the resistance value between one end or the other end of a first assembled electrode and the other end or one end of a second assembled electrode adjacent to each other in the assembled electrodes.

[0023] In this embodiment, the step of detecting whether there is a short circuit between adjacent assembled electrodes includes: a step of bringing the first probe into contact with the assembled electrode exposed through the opening on one end side of the first assembled electrode, or bringing the second probe into contact with the assembled electrode exposed through the opening on the other end side of the first assembled electrode; a step of bringing the second probe into contact with the assembled electrode exposed through the opening on the other end side of the second assembled electrode, or bringing the first probe into contact with the assembled electrode exposed through the opening on one end side of the second assembled electrode; and a step of measuring a resistance value between the first probe in contact with the first assembled electrode and the second probe in contact with the second assembled electrode, or measuring a resistance value between the second probe in contact with the first assembled electrode and the first probe in contact with the first assembled electrode.

[0024] According to an embodiment of the present invention, a self-assembly device forms an electric field to assemble a semiconductor light-emitting element on a substrate, wherein the substrate is extended in one direction and includes an assembly electrode covered by an insulating layer and an opening that exposes a portion of both ends of the assembly electrode. The self-assembly device is characterized in that it includes: a power supply unit that generates a voltage signal; a control unit that converts the generated voltage signal; and a probe that applies the converted voltage signal to the assembly electrode; the probe contacts the assembly electrodes exposed through the openings respectively to apply voltage to the assembly electrodes.

[0025] In this embodiment, the probe includes: a plurality of first probes, arranged on one end side of the assembled electrode and in contact with one end of the assembled electrode; and a plurality of second probes, arranged on the other end side of the assembled electrode and in contact with the other end of the assembled electrode.

[0026] In this embodiment, the control unit includes: a first control unit connected to the first probe; and a second control unit connected to the second probe; the first control unit and the second control unit independently convert the generated voltage signal.

[0027] Technical Effects

[0028] According to an embodiment of the present invention, by forming a structure in which both ends of the assembly electrodes on the substrate are exposed through openings, voltage can be applied by making the probe contact each assembly electrode individually, thereby having the effect of effectively assembling a semiconductor light-emitting element that emits red, green and blue light onto the substrate.

[0029] In particular, the present invention has the effect of simplifying the manufacturing process and reducing the manufacturing cost for manufacturing a substrate for self-assembling semiconductor light-emitting elements that emit red, green, and blue light.

[0030] In addition, the probe may have a function capable of measuring the resistance of the assembled electrode, thereby having an effect of being able to simply and easily detect defects such as short circuits and short circuits of the assembled electrode in the assembly step. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting element according to the present invention.

[0032] Figure 2 yes Figure 1 A partial enlarged view of part A of the display device.

[0033] Figure 3 yes Figure 2 An enlarged view of a semiconductor light-emitting element.

[0034] Figure 4 Yes means Figure 2 An enlarged view of another embodiment of a semiconductor light emitting element.

[0035] Figure 5a to Figure 5e This is a conceptual diagram for explaining a new process for manufacturing the aforementioned semiconductor light-emitting element.

[0036] Figure 6 This is a conceptual diagram showing an example of a self-assembly device for a semiconductor light emitting element of the present invention.

[0037] Figure 7 yes Figure 6 Block diagram of the self-assembly device.

[0038] Figures 8a to 8e It means to use Figure 6 A conceptual diagram of the process of assembling semiconductor light-emitting elements from a self-assembled device.

[0039] Fig. 9 It is used to illustrate Figures 8a to 8e Conceptual diagram of a semiconductor light-emitting element.

[0040] Figures 10a to 10c This is a conceptual diagram showing a state in which a semiconductor light emitting element is transferred after the self-assembly process of the present invention.

[0041] Figures 11 to 13 This is a flowchart showing a method for manufacturing a display device including a semiconductor light emitting element that emits red R, green G, and blue B light.

[0042] Fig.14 It is a diagram showing the structure of a conventional substrate on which a build electrode is formed.

[0043] Fig.15This is a diagram showing a connection structure for voltage application between assembly electrodes formed on a conventional substrate.

[0044] Fig.16 It is a diagram showing the structure of a substrate on which an assembly electrode according to an embodiment of the present invention is formed.

[0045] Fig.17 It means the probe passes Fig.16 A diagram showing a state in which the opening of the substrate is in contact with the assembly electrode.

[0046] Fig.18 This is a conceptual diagram showing a method of applying voltage to an assembled electrode according to an embodiment of the present invention.

[0047] Fig.19 3 is a graph showing voltage signals applied to respective assembled electrodes when assembling RGB according to an embodiment of the present invention.

[0048] Fig. 20 This is a conceptual diagram showing a method of detecting whether an assembled electrode is short-circuited according to an embodiment of the present invention.

[0049] Fig.21 This is a conceptual diagram showing a method of detecting whether there is a short circuit between adjacent assembly electrodes according to an embodiment of the present invention. DETAILED DESCRIPTION

[0050] Hereinafter, the embodiments disclosed in this specification are described in detail with reference to the accompanying drawings, and the same or similar structural elements are given the same figure marks regardless of the figure numbers, and repeated descriptions thereof will be omitted. The suffixes "module" and "part" used in the following description for structural elements are only given or mixed for the convenience of writing the specification, and they themselves do not have mutually distinguishing meanings or functions. In addition, in the process of describing the embodiments disclosed in this specification, if it is judged that the specific description of the relevant known technology will cause confusion with the technical ideas of the embodiments disclosed in this specification, the detailed description thereof will be omitted. In addition, the attached drawings are only for the easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification should not be limited by the attached drawings. In addition, when it is mentioned that a structural element such as a layer, a region or a substrate exists "on" another structural element, it can be understood that it means that it exists directly on another structural element or that there may be an intermediate structural element between them.

[0051] The display device described in this specification may include a mobile phone, a smartphone, a laptop computer, a digital broadcast terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigator, a touch-screen tablet PC (Slate PC), a tablet PC (Tablet PC), an Ultra Book, a digital TV, a desktop computer, etc. However, even if it is a new product form developed later, as long as it includes a display, the configuration of the embodiments described in this specification can be applied.

[0052] Figure 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting element of the present invention. Figure 2 yes Figure 1 A partial enlarged view of part A of the display device, Figure 3 yes Figure 2 An enlarged view of a semiconductor light emitting element. Figure 4 Yes means Figure 2 An enlarged view of another embodiment of a semiconductor light emitting element.

[0053] According to the diagram, information processed by the control unit of the display device 100 may be output from the display module 140. The closed loop-shaped housing 101 surrounding the edge of the display module may form a frame of the display device.

[0054] The display module 140 is provided with a panel 141 for displaying an image. The panel 141 may be provided with a semiconductor light emitting element 150 of a micron size and a wiring substrate 110 on which the semiconductor light emitting element 150 is mounted.

[0055] Wiring may be formed on the wiring substrate 110 to connect to the first conductive type electrode 152 and the second conductive type electrode 156 of the semiconductor light emitting element 150. Thus, the semiconductor light emitting element 150 may be provided on the wiring substrate 110 as a self-luminous individual pixel.

[0056] The image displayed on the panel 141 is visual information, which is realized by individually controlling the light emission of unit pixels (sub-pixels) arranged in a matrix form through the wiring.

[0057] In the present invention, as a semiconductor light emitting element 150 that converts current into light, a micro LED (Light Emitting Diode) is exemplified. The micro LED may be a light emitting diode formed in a small size of less than 100 microns. The semiconductor light emitting element 150 may be respectively arranged in blue, red, and green light emitting regions and a unit pixel may be realized by their combination. That is, the unit pixel represents the minimum unit for realizing one color, and at least three micro LEDs may be arranged in the unit pixel.

[0058] More specifically, refer to Figure 3 , the semiconductor light emitting element 150 may be a vertical structure.

[0059] For example, the semiconductor light emitting element 150 may be mainly made of gallium nitride GaN and added with indium In and / or aluminum Al to realize a high-power light emitting element that emits various lights including blue.

[0060] Such a vertical semiconductor light emitting element includes: a second conductive type electrode 156, a second conductive type semiconductor layer 155 formed on the second conductive type electrode 156, an active layer 154 formed on the second conductive type semiconductor layer 155, a first conductive type semiconductor layer 153 formed on the active layer 154, and a first conductive type electrode 152 formed on the first conductive type semiconductor layer 153. In this case, the second conductive type electrode 156 located at the bottom can be electrically connected to the p-electrode of the wiring substrate, and the first conductive type electrode 152 located at the top can be electrically connected to the n-electrode on the upper side of the semiconductor light emitting element. Since such a vertical semiconductor light emitting element 150 can configure the electrodes up / down, it has a great advantage of being able to reduce the chip size.

[0061] As another example, refer to Figure 4 , the semiconductor light emitting element may be a flip chip type light emitting element.

[0062] As such an example, the semiconductor light emitting element 250 includes: a p-type electrode 256, a p-type semiconductor layer 255 formed with the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 arranged horizontally apart from the p-type electrode 256 on the n-type semiconductor layer 253. In this case, the p-type electrode 256 and the n-type electrode 252 can be electrically connected to the p-electrode and the n-electrode of the wiring substrate at the bottom of the semiconductor light emitting element.

[0063] The vertical semiconductor light-emitting element and the horizontal semiconductor light-emitting element can each be a green semiconductor light-emitting element, a blue semiconductor light-emitting element or a red semiconductor light-emitting element. In the case of a green semiconductor light-emitting element and a blue semiconductor light-emitting element, a high-power light-emitting element emitting green or blue light can be realized by mainly using gallium nitride GaN and adding indium In and / or aluminum Al. As such an example, the semiconductor light-emitting element can be a gallium nitride thin film formed by various layers such as n-Gan, p-Gan, AlGaN, InGan, etc. Specifically, the p-type semiconductor layer can be P-type GaN, and the n-type semiconductor layer can be N-type GaN. However, in the case of a red semiconductor light-emitting element, the p-type semiconductor layer can be P-type GaAs, and the n-type semiconductor layer can be N-type GaAs.

[0064] In addition, the p-type semiconductor layer may be P-type GaN doped with Mg on the p-electrode side, and the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side. In this case, the semiconductor light emitting element may be a semiconductor light emitting element without an active layer.

[0065] On the other hand, refer to Figures 1 to 4 Since the light-emitting diodes are very small, the display panel can arrange self-luminous unit pixels with high precision, thereby realizing a high-quality display device.

[0066] In the display device using the semiconductor light emitting element of the present invention described above, the semiconductor light emitting element grown on the wafer and formed by the mesa and isolation is used as a single pixel. In this case, it is necessary to transfer the micron-sized semiconductor light emitting element 150 to a predetermined position on the substrate of the display panel on the wafer. Although there is pick and place as such a transfer technology, the success rate is low and it takes a lot of time. Although, as another example, there is a technology that uses a stamp or a roller to transfer multiple elements at once, it is not suitable for large-screen displays because of the limit of the yield. The present invention provides a new manufacturing method and manufacturing device for a display device that can solve such problems.

[0067] To this end, first, a new method for manufacturing a display device will be described below. Figure 5a to Figure 5e This is a conceptual diagram for explaining a new process for manufacturing the aforementioned semiconductor light-emitting element.

[0068] In this specification, a display device using a semiconductor light emitting element of a passive matrix (PM) method is exemplified. However, the examples described below can also be applied to semiconductor light emitting elements of an active matrix (AM) method. In addition, although the method of self-assembling horizontal semiconductor light emitting elements is exemplified, this can also be applied to the method of self-assembling vertical semiconductor light emitting elements.

[0069] First, according to the manufacturing method, the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 are grown on the growth substrate 159, respectively. Figure 5a ).

[0070] If the first conductive type semiconductor layer 153 is grown, then the active layer 154 is grown on the first conductive type semiconductor layer 153, and then the second conductive type semiconductor layer 155 is grown on the active layer 154. As described above, if the first conductive type semiconductor layer 153, the active layer 154, and the second conductive type semiconductor layer 155 are grown in sequence, Figure 5a As shown, the first conductive semiconductor layer 153, the active layer 154 and the second conductive semiconductor layer 155 form a stacked structure.

[0071] In this case, the first conductive type semiconductor layer 153 may be a p-type semiconductor layer, and the second conductive type semiconductor layer 155 may be an n-type semiconductor layer. However, the present invention is not necessarily limited thereto, and the first conductive type may be an n-type and the second conductive type may be a p-type.

[0072] In addition, although the present embodiment illustrates the case where the active layer exists, as mentioned above, a structure without the active layer may be adopted depending on the situation. As an example, the p-type semiconductor layer may be P-type-GaN doped with Mg, and the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side.

[0073] The growth substrate 159 (wafer) may include a material having a light-transmitting property, such as any one of sapphire Al2O3, GaN, ZnO, and AlO, but is not limited thereto. In addition, the growth substrate 159 may be formed of a material suitable for the growth of semiconductor materials, such as a carrier wafer. It may be formed of a material having excellent thermal conductivity, including a conductive substrate or an insulating substrate, for example, using a SiC substrate or at least one of Si, GaAs, GaP, InP, and Ga2O3, which has a greater thermal conductivity than a sapphire Al2O3 substrate.

[0074] Next, a plurality of semiconductor light emitting elements ( Figure 5b ).

[0075] More specifically, isolation is performed so that the plurality of light emitting elements form a light emitting element array, that is, the plurality of semiconductor light emitting elements are formed by etching the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 in a vertical direction.

[0076] If a horizontal semiconductor light emitting element is to be formed, a mesa process can be performed in which a portion of the active layer 154 and the second conductive semiconductor layer 155 are removed in a vertical direction to expose the first conductive semiconductor layer 153 to the outside, and then isolation (isolation) can be performed by etching the first conductive semiconductor layer to form a plurality of semiconductor light emitting element arrays.

[0077] Next, a second conductive type electrode 156 (or a p-type electrode) is formed on one surface of the second conductive type semiconductor layer 155. Figure 5c The second conductive electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not necessarily limited thereto. However, when the first conductive semiconductor layer and the second conductive semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, the second conductive electrode 156 may also be an n-type electrode.

[0078] Afterwards, the growth substrate 159 is removed to form a plurality of semiconductor light emitting elements. For example, the growth substrate 159 may be removed using a laser lift-off (LLO) or chemical lift-off (CLO). Figure 5d ).

[0079] Then, a step of placing the semiconductor light emitting element 150 on the substrate 161 in a chamber filled with a fluid is performed ( Figure 5e ).

[0080] For example, the semiconductor light emitting element 150 and the substrate 161 are placed in a chamber filled with a fluid, and the semiconductor light emitting element is self-assembled to the substrate 161 by movement, gravity, surface tension, etc. In this case, the substrate 161 may be an assembly substrate 161 .

[0081] As another example, a wiring substrate may be used instead of the assembly substrate 161 to be placed in the fluid chamber, and the semiconductor light emitting element 150 may be directly placed on the wiring substrate. In this case, the substrate 161 may be a wiring substrate. However, for the convenience of explanation, the present invention illustrates a case where the substrate 161 is composed of the assembly substrate 161 and the semiconductor light emitting element 150 is placed on the substrate 161.

[0082] The assembly substrate 161 may be provided with a unit (not shown) for inserting the semiconductor light emitting element 150, so that the semiconductor light emitting element 150 can be easily placed on the assembly substrate 161. Specifically, a unit for placing the semiconductor light emitting element 150 is formed at a position where the semiconductor light emitting element 150 is aligned with the wiring electrode of the assembly substrate 161. The semiconductor light emitting element 150 is assembled to the unit while moving in the fluid.

[0083] If the semiconductor light emitting elements of the assembly substrate 161 are transferred to a wiring substrate after a plurality of semiconductor light emitting elements are arrayed on the assembly substrate 161, a large area transfer can be achieved. Therefore, the assembly substrate 161 can be called a temporary substrate.

[0084] On the other hand, if the self-assembly method described above is to be applied to the manufacture of large-screen displays, the transfer yield rate needs to be improved. In order to improve the transfer yield rate, the present invention proposes a method and device for minimizing the influence of gravity or friction and preventing nonspecific binding.

[0085] In this case, in the display device of the present invention, a magnet is arranged on the semiconductor light emitting element, and the semiconductor light emitting element is moved by magnetic force, and the semiconductor light emitting element is placed at a preset position by an electric field during the movement. Figure 1 Such a transfer method and device will be described in detail below.

[0086] Figure 6 is a conceptual diagram showing an example of a self-assembly device of a semiconductor light emitting element of the present invention, Figure 7 yes Figure 6 Block diagram of the self-assembly device. Figures 8a to 8d It means to use Figure 6 A conceptual diagram of the process of assembling semiconductor light-emitting elements from a self-assembly device. Fig. 9 It is used to illustrate Figures 8a to 8d Conceptual diagram of a semiconductor light-emitting element.

[0087] according to Figure 6 and Figure 7 As shown, the self-assembly device 160 of the present invention may include: a fluid chamber 162 , a magnet 163 and a position control unit 164 .

[0088] The fluid chamber 162 has a space for accommodating a plurality of semiconductor light emitting elements. The space may be filled with a fluid, and the fluid may include water or the like as an assembly solution. Therefore, the fluid chamber 162 may be a water tank and may be formed as an open type. However, the present invention is not limited thereto, and the fluid chamber 162 may also be formed as a closed type in which the space is a closed space.

[0089] The substrate 161 may be arranged in the fluid chamber 162 such that the assembly surface of the semiconductor light emitting element 1050 is facing downward. For example, the substrate 161 is moved to the assembly position by a transfer unit, and the transfer unit may be provided with a platform 165 (stage) for mounting the substrate. The position of the platform 165 is adjusted by a control unit, thereby the substrate 161 can be moved to the assembly position.

[0090] At this time, in the assembly position, the assembly surface of the substrate 161 faces the bottom of the fluid chamber 162. According to the figure, the assembly surface of the substrate 161 is configured to be immersed in the fluid in the fluid chamber 162. Therefore, the semiconductor light emitting element 1050 moves toward the assembly surface in the fluid.

[0091] The substrate 161 is an assembly substrate capable of forming an electric field, and may include a base portion 161 a , a dielectric layer 161 b , and a plurality of electrodes 161 c .

[0092] The base portion 161a may be formed of an insulating material, and the plurality of electrodes 161c may be patterned thin-film or thick-film bi-planar electrodes on one side of the base portion 161a. The electrodes 161c may be formed of, for example, a stack of Ti / Cu / Ti, Ag paste, and ITO.

[0093] The dielectric layer 161b may be formed of inorganic materials such as SiO2, SiNx, SiON, Al2O3, TiO2, HfO2, etc. Alternatively, the dielectric layer 161b may be formed as a single layer or multiple layers as an organic insulator. The thickness of the dielectric layer 161b may be tens of nm to several μm.

[0094] Further, the substrate 161 of the present invention includes a plurality of units 161d separated by partition walls. The plurality of units 161d are arranged in sequence along a direction and can be formed of a polymer material. In addition, adjacent units 161d share a partition wall 161e constituting the unit 161d. The partition wall 161e protrudes from the base portion 161a, and the units 161d can be arranged in sequence along a direction through the partition wall 161e. More specifically, the units 161d can be arranged in sequence along the column direction and the row direction, respectively, and can have a matrix structure.

[0095] As shown in the figure, a groove for accommodating the semiconductor light emitting element 1050 is formed inside the unit 161d, and the groove can be a space defined by the partition wall 161e. The shape of the groove can be the same as or similar to the shape of the semiconductor light emitting element. For example, when the semiconductor light emitting element is a quadrilateral shape, the groove can be a quadrilateral shape. In addition, although not shown, when the semiconductor light emitting element is a circular shape, the groove formed inside the unit can be a circular shape. Further, each unit is formed to accommodate a single semiconductor light emitting element. That is, one unit accommodates one semiconductor light emitting element.

[0096] On the other hand, the plurality of electrodes 161c are provided with a plurality of electrode lines disposed at the bottom of each unit 161d, and the plurality of electrode lines may be formed to extend toward adjacent units.

[0097] The plurality of electrodes 161c are arranged on the lower side of the cell 161d, and different polarities are applied to each other, thereby generating an electric field in the cell 161d. In order to form the electric field, the dielectric layer covers the plurality of electrodes 161c, and the dielectric layer can form the bottom of the cell 161d. In such a structure, if different polarities are applied to a pair of electrodes 161c on the lower side of each cell 161d, an electric field is formed and the semiconductor light emitting element can be inserted into the cell 161d due to the electric field.

[0098] The electrodes of the substrate 161 and the power supply unit 171 are electrically connected at the assembly position. The power supply unit 171 generates the electric field by applying power to the plurality of electrodes.

[0099] According to the figure, the self-assembly device may be provided with a magnet 163 for applying a magnetic force to the semiconductor light emitting element. The magnet 163 is configured to be separated from the fluid chamber 162 and to apply a magnetic force to the semiconductor light emitting element 1050. The magnet 163 may be configured to face the opposite side of the assembly surface of the substrate 161, and the position of the magnet is controlled by a position control unit 164 connected to the magnet 163.

[0100] The semiconductor light emitting element 1050 may be provided with a magnet so that the semiconductor light emitting element 1050 moves in the fluid using the magnetic field of the magnet 163 .

[0101] Reference Fig. 9 The semiconductor light emitting element provided with a magnet may include: a first conductive electrode 1052 and a second conductive electrode 1056; a first conductive semiconductor layer 1053, wherein the first conductive electrode 1052 is configured in the first conductive semiconductor layer 1053; a second conductive semiconductor layer 1055, overlapping with the first conductive semiconductor layer 1052, wherein the second conductive electrode 1056 is configured in the second conductive semiconductor layer 1055; and an active layer 1054, configured between the first conductive semiconductor layer 1053 and the second conductive semiconductor layer 1055.

[0102] Here, the first conductivity type may be p-type, the second conductivity type may be n-type, or the reverse may be used. In addition, as described above, the semiconductor light emitting element may not have the active layer.

[0103] On the other hand, in the present invention, the first conductive electrode 1052 can be generated after the semiconductor light emitting element is assembled on the wiring substrate by self-assembly of the semiconductor light emitting element. In addition, in the present invention, the second conductive electrode 1056 can include the magnet. The magnet can be a metal with magnetism. The magnet can be Ni, SmCo, etc., and as another example, can include a substance corresponding to at least one of the Gd series, La series, and Mn series.

[0104] The magnet may be provided in the form of particles on the second conductive electrode 1056. Alternatively, the conductive electrode including the magnet may be configured such that one layer of the conductive electrode is composed of the magnet. Fig. 9 As shown, the second conductive type electrode 1056 of the semiconductor light emitting element 1050 may include a first layer 1056a and a second layer 1056b. Here, the first layer 1056a may be formed to include a magnet, and the second layer 1056b may include a metal material that is not a magnet.

[0105] As shown in the figure, in this example, the first layer 1056a, which may be configured to include a magnet, abuts against the second conductive semiconductor layer 1055. In this case, the first layer 1056a may be configured between the second layer 1056b and the second conductive semiconductor layer 1055. The second layer 1056b may be a contact metal connected to the second electrode of the wiring substrate. However, the present invention is not necessarily limited to this, and the magnet may be configured on one side of the first conductive semiconductor layer.

[0106] Refer again Figure 6 and Figure 7 More specifically, the self-assembly device may be provided with a magnet handler that can be automatically or manually moved along the x, y, and z axes on the upper portion of the fluid chamber, or a motor that can rotate the magnet 163. The magnet handler and the motor may constitute the position control unit 164. Thus, the magnet 163 rotates in a direction parallel to the substrate 161, in a clockwise direction, or in a counterclockwise direction.

[0107] On the other hand, a light-transmitting bottom plate 166 may be formed in the fluid chamber 162, and the semiconductor light emitting element may be disposed between the bottom plate 166 and the substrate 161. An image sensor 167 may be disposed facing the bottom plate 166 to monitor the interior of the fluid chamber 162 through the bottom plate 166. The image sensor 167 is controlled by a control unit 172, and may be provided with an inverted type lens, a CCD, etc., so as to be able to observe the assembly surface of the substrate 161.

[0108] The self-assembly device is formed by using a combination of a magnetic field and an electric field, thereby using the electric field to place the semiconductor light emitting element at a predetermined position on the substrate during the movement of the semiconductor light emitting element due to the change in the position of the magnet. The assembly process using the magnetic assembly device described above is described in more detail below.

[0109] First, by Figure 5a to Figure 5c The plurality of semiconductor light emitting elements 1050 provided with magnets are formed by the process described in the above. In this case, Figure 5c During the process of forming the second conductive type electrode, a magnetic body may be deposited on the semiconductor light emitting element.

[0110] Next, the substrate 161 is moved to the assembly position, and the semiconductor light emitting element 1050 is placed into the fluid chamber 162 ( Figure 8a ).

[0111] As described above, the assembly position of the substrate 161 may be a position where the assembly surface of the substrate 161 , in which the semiconductor light emitting element 1050 is assembled, faces downward in the fluid chamber 162 .

[0112] In this case, part of the semiconductor light emitting element 1050 may sink to the bottom of the fluid chamber 162, while part of it may float in the fluid. In the case where the fluid chamber 162 is provided with a light-transmissive bottom plate 166, part of the semiconductor light emitting element 1050 may sink to the bottom plate 166.

[0113] Next, a magnetic force is applied to the semiconductor light emitting element 1050 so that the semiconductor light emitting element 1050 floats vertically in the fluid chamber 162 ( Figure 8b ).

[0114] If the magnet 163 of the self-assembly device moves from the original position to the opposite side of the assembly surface of the substrate 161, the semiconductor light emitting element 1050 can float toward the substrate 161 in the fluid. The original position may be a position deviated from the fluid chamber 162. As another example, the magnet 163 may be an electromagnet. In this case, the initial magnetic force is generated by supplying power to the electromagnet.

[0115] On the other hand, in this example, if the magnitude of the magnetic force is adjusted, the interval between the assembly surface of the substrate 161 and the semiconductor light emitting element 1050 can be controlled. For example, the interval is controlled by using the weight, buoyancy, and magnetic force of the semiconductor light emitting element 1050. The interval can be several millimeters to tens of microns from the outermost contour of the substrate.

[0116] Next, a magnetic force is applied to the semiconductor light emitting element 1050 to move the semiconductor light emitting element 1050 in a direction within the fluid chamber 162. For example, the magnet 163 is moved in a direction parallel to the substrate, in a clockwise direction, or in a counterclockwise direction ( Figure 8c In this case, the semiconductor light emitting element 1050 moves in a direction parallel to the substrate 161 at a position separated from the substrate 161 by the magnetic force.

[0117] Next, a step of guiding the semiconductor light emitting element 1050 to the preset position by applying an electric field is performed, so that the semiconductor light emitting element 1050 is placed at the preset position ( Figure 8c For example, when the semiconductor light emitting element 1050 moves in a direction parallel to the substrate 161 , the semiconductor light emitting element 1050 moves in a direction perpendicular to the substrate 161 due to the electric field and is placed at a predetermined position of the substrate 161 .

[0118] More specifically, an electric field is generated by supplying power to the bi-planar electrodes of the substrate 161, and the electric field is used to guide the assembly to be performed only at a preset position. That is, the semiconductor light emitting element 1050 is self-assembled to the assembly position of the substrate 161 by using the selectively generated electric field. To this end, a unit for inserting the semiconductor light emitting element 1050 may be provided on the substrate 161.

[0119] After that, the substrate 161 is unloaded and the assembly process is completed. In the case where the substrate 161 is an assembly substrate, as described above, a post-process for realizing a display device can be performed by transferring the arrayed semiconductor light emitting elements to a wiring substrate.

[0120] On the other hand, after the semiconductor light emitting element 1050 is guided to the preset position, the magnet 163 can be moved in a direction away from the substrate 161 ( Figure 8d ), so that the semiconductor light emitting element 1050 remaining in the fluid chamber 162 falls to the bottom of the fluid chamber 162. As another example, when the magnet 163 is an electromagnet, if the power supply is interrupted, the semiconductor light emitting element 1050 remaining in the fluid chamber 162 will fall to the bottom of the fluid chamber 162.

[0121] Thereafter, if the semiconductor light emitting element 1050 existing at the bottom of the fluid chamber 162 is recovered, the recovered semiconductor light emitting element 1050 can be reused.

[0122] In the self-assembly device and method described above, in order to improve the assembly yield in fluidic assembly, a magnetic field is used to concentrate components located far away near a pre-set assembly location, and an additional electric field is applied to the assembly location so that the components are selectively assembled only to the assembly location. At this time, the assembly substrate is located at the upper part of the water tank and the assembly surface is facing downward, thereby not only minimizing the influence of gravity caused by the weight of the components, but also being able to eliminate defects by preventing nonspecific binding. That is, in order to improve the transfer yield, the influence of gravity or friction is minimized by locating the assembly substrate at the upper part, and nonspecific binding is prevented.

[0123] As described above, according to the present invention having the above-described structure, in a display device in which individual pixels are formed by semiconductor light emitting elements, a large number of semiconductor light emitting elements can be assembled at once.

[0124] As described above, according to the present invention, a large number of semiconductor light emitting elements can be pixelated on a small-sized wafer and then transferred to a large-area substrate, thereby making it possible to manufacture a large-area display device at a low cost.

[0125] On the other hand, the present invention provides a structure and method of an assembly substrate for improving the yield of the above-mentioned self-assembly process and the yield of the process after self-assembly. The present invention is limited to the case where the substrate 161 is used as an assembly substrate. That is, the assembly substrate described later is not used as a wiring substrate for a display device. Therefore, the substrate 161 is referred to as an assembly substrate 161 below.

[0126] The present invention improves the process yield in two aspects. First, the present invention prevents the formation of a strong electric field at an undesirable position, which causes the semiconductor light-emitting element to be placed at an undesirable position. Second, the present invention prevents the semiconductor light-emitting element from remaining on the assembly substrate when the semiconductor light-emitting element placed on the assembly substrate is transferred to another substrate.

[0127] The above-mentioned objects are not achieved by different components alone, but can be achieved by organically combining the components described later and the assembly substrate 161 described above.

[0128] Before describing the present invention in detail, a post-process for manufacturing a display device after self-assembly will be described.

[0129] Figures 10a to 10c This is a conceptual diagram showing a state in which a semiconductor light emitting element is transferred after the self-assembly process of the present invention.

[0130] If in Figures 8a to 8e When the self-assembly process described in the above is completed, the semiconductor light emitting element is placed at a preset position of the assembly substrate 161. The semiconductor light emitting element placed on the assembly substrate 161 is transferred to another substrate at least once. In this specification, although an embodiment in which the semiconductor light emitting element placed on the assembly substrate 161 is transferred twice is described, it is not limited to this, and the semiconductor light emitting element placed on the assembly substrate 161 can be transferred to another substrate once or three times or more.

[0131] On the other hand, immediately after the self-assembly process is completed, the assembly surface of the assembly substrate 161 is facing downward (or in the direction of gravity). For the post-self-assembly process, the assembly substrate 161 can be flipped 180 degrees with the semiconductor light-emitting element mounted thereon. In this process, since there is a risk of the semiconductor light-emitting element detaching from the assembly substrate 161, a voltage needs to be applied to the plurality of electrodes 161c (hereinafter referred to as assembly electrodes) during the flipping of the assembly substrate 161. The electric field formed between the assembly electrodes prevents the semiconductor light-emitting element from detaching from the assembly substrate 161 during the flipping of the assembly substrate 161.

[0132] If the assembly substrate 161 is turned 180 degrees after the self-assembly process, it becomes as follows Fig.10a Specifically, Fig.10a , the assembly surface of the assembly substrate 161 is in a state of facing upward (or in the opposite direction of gravity). In this state, the transfer substrate 400 is aligned with the upper side of the assembly substrate 161.

[0133] The transfer substrate 400 is a substrate for detaching the semiconductor light emitting element placed on the assembly substrate 161 and transferring it to the wiring substrate. The transfer substrate 400 can be formed of PDMS (polydimethyl siloxane). Therefore, the transfer substrate 400 can be called a PDMS substrate.

[0134] The transfer substrate 400 is aligned with the assembly substrate 161 and then pressed against the assembly substrate 161. Thereafter, if the transfer substrate 400 is moved to the upper side of the assembly substrate 161, the semiconductor light emitting element 350 disposed on the assembly substrate 161 moves toward the transfer substrate 400 due to the adhesion force of the transfer substrate 400.

[0135] To this end, the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400 needs to be greater than the surface energy between the semiconductor light emitting element 350 and the dielectric layer 161b. Since the greater the difference between the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400 and the surface energy between the semiconductor light emitting element 350 and the dielectric layer 161b, the higher the probability that the semiconductor light emitting element 350 will be detached from the assembly substrate 161, the greater the difference between the two surface energies, the more preferred.

[0136] On the other hand, the transfer substrate 400 may include a plurality of protrusions 410 so that the pressure applied by the transfer substrate 400 when the transfer substrate 400 is pressed against the assembly substrate 161 is concentrated on the semiconductor light emitting element 350. The protrusions 410 may be formed at the same intervals as the intervals of the semiconductor light emitting elements arranged on the assembly substrate 161. When the transfer substrate 400 is pressed against the assembly substrate 161 after the protrusions 410 are overlapped in an aligned manner with the semiconductor light emitting element 350, the pressure based on the transfer substrate 400 can be concentrated only on the semiconductor light emitting element 350. Thus, the present invention increases the probability of the semiconductor light emitting element detaching from the assembly substrate 161.

[0137] On the other hand, preferably, a portion of the semiconductor light emitting element is exposed outside the groove when the semiconductor light emitting element is placed on the assembly substrate 161. If the semiconductor light emitting element 350 is not exposed outside the groove, the pressure from the transfer substrate 400 will not be concentrated on the semiconductor light emitting element 350, which may reduce the probability of the semiconductor light emitting element 350 detaching from the assembly substrate 161.

[0138] Finally, refer to Fig.10c, a step of transferring the semiconductor light emitting element 350 from the transfer substrate 400 to the wiring substrate 500 by pressing the transfer substrate 400 against the wiring substrate 500. At this time, a protrusion 510 may be formed on the wiring substrate 500. The transfer substrate 400 and the wiring substrate 500 are aligned so that the semiconductor light emitting element 350 arranged on the transfer substrate 400 and the protrusion 510 overlap. Thereafter, when the transfer substrate 400 and the wiring substrate 500 are pressed against each other, the protrusion 510 can increase the probability that the semiconductor light emitting element 350 is detached from the transfer substrate 400.

[0139] On the other hand, in order to transfer the semiconductor light emitting element 350 disposed on the transfer substrate 400 to the wiring substrate 500, the surface energy between the semiconductor light emitting element 350 and the wiring substrate 500 needs to be greater than the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400. Since the greater the difference between the surface energy between the semiconductor light emitting element 350 and the wiring substrate 500 and the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400, the higher the probability that the semiconductor light emitting element 350 will be detached from the transfer substrate 400, the greater the difference between the two surface energies, the more preferred.

[0140] After all the semiconductor light emitting elements 350 arranged on the transfer substrate 400 are transferred to the wiring substrate 500, a step of forming electrical connections between the semiconductor light emitting elements 350 and wiring electrodes formed on the wiring substrate may be performed. The structure of the wiring electrodes and the method of forming electrical connections may vary depending on the type of the semiconductor light emitting element 350.

[0141] On the other hand, although not shown, an anisotropic conductive film may be provided on the wiring substrate 500. In this case, electrical connection can be formed between the semiconductor light emitting element 350 and the wiring electrodes formed on the wiring substrate 500 simply by pressing the transfer substrate 400 and the wiring substrate 500 together.

[0142] On the other hand, in the case of manufacturing a display device including semiconductor light emitting elements that emit light of different colors from each other, Figures 10a to 10c The method described in the above can be implemented in various ways. Next, a method for manufacturing a display device including a semiconductor light emitting element that emits red R, green G, and blue B light will be described.

[0143] Figures 11 to 13 This is a flowchart showing a method for manufacturing a display device including a semiconductor light emitting element that emits red R, green G, and blue B light.

[0144] Semiconductor light emitting elements that emit light of different colors can be individually assembled onto different assembly substrates. Specifically, the assembly substrate 161 may include: a first assembly substrate, on which semiconductor light emitting elements that emit light of a first color are placed; a second assembly substrate, on which semiconductor light emitting elements that emit light of a second color different from the first color are placed; and a third assembly substrate, on which semiconductor light emitting elements that emit light of a third color different from the first color and the second color are placed. Figures 8a to 8e The semiconductor light emitting elements of different types are assembled by the method described in the above. For example, semiconductor light emitting elements emitting red R, green G, and blue B light may be assembled on the first to third assembly substrates, respectively.

[0145] Reference Fig.11 , a RED chip, a GREEN chip, and a BLUE chip can be assembled on the first assembly substrate (RED TEMPLATE), the second assembly substrate (GREEN TEMPLATE), and the third assembly substrate (BLUE TEMPLATE), respectively. In this state, the RED chip, the GREEN chip, and the BLUE chip can be transferred to the wiring substrate respectively through different transfer substrates.

[0146] Specifically, the step of transferring the semiconductor light emitting element arranged on the assembly substrate to the wiring substrate may include: the step of transferring the semiconductor light emitting element (RED chip) emitting the first color of light from the first assembly substrate (RED TEMPLATE) to the first transfer substrate (stamp R) by pressing the first transfer substrate (stamp R) against the first assembly substrate (RED TEMPLATE); the step of transferring the semiconductor light emitting element (GREEN chip) emitting the second color of light from the second assembly substrate (GREEN TEMPLATE) to the second transfer substrate (stamp G) by pressing the second transfer substrate (stamp G) against the second assembly substrate (GREEN TEMPLATE); and the step of transferring the semiconductor light emitting element (BLUE chip) emitting the third color of light from the third assembly substrate (BLUE TEMPLATE) to the third transfer substrate (stamp B) by pressing the third transfer substrate (stamp B) against the third assembly substrate (BLUE TEMPLATE).

[0147] Thereafter, a step is performed in which the semiconductor light emitting elements emitting the first to third colors of light are transferred from the first to third transfer substrates to the wiring substrate respectively by pressing the first to third transfer substrates to the wiring substrate respectively.

[0148] according to Fig.11 According to the manufacturing method, in order to manufacture a display device including a RED chip, a GREEN chip, and a BLUE chip, three types of assembly substrates and three types of transfer substrates are required.

[0149] In contrast, referring to Fig.12 , a RED chip (chip), a GREEN chip (chip) and a BLUE chip (chip) can be assembled on the first assembly substrate (RED TEMPLATE), the second assembly substrate (GREENTEMPLATE) and the third assembly substrate (BLUE TEMPLATE) respectively. In this state, the RED chip, the GREEN chip and the BLUE chip can each be transferred to the wiring substrate through the same transfer substrate.

[0150] Specifically, the step of transferring the semiconductor light emitting element arranged on the assembly substrate to the wiring substrate includes: the step of transferring the semiconductor light emitting element (RED chip) emitting the first color of light from the first assembly substrate (RED TEMPLATE) to the transfer substrate (RGB integrated stamp) by pressing the transfer substrate (RGB integrated stamp) against the first assembly substrate (RED TEMPLATE); the step of transferring the semiconductor light emitting element (GREEN chip) emitting the second color of light from the second assembly substrate (GREEN TEMPLATE) to the transfer substrate (RGB integrated stamp) by pressing the transfer substrate (RGB integrated stamp) against the second assembly substrate (GREEN TEMPLATE); the step of transferring the semiconductor light emitting element (BLUE chip) emitting the third color of light from the third assembly substrate (BLUE TEMPLATE) to the transfer substrate (RGB integrated stamp) by pressing the transfer substrate (RGB integrated stamp) against the third assembly substrate (BLUE TEMPLATE).

[0151] In this case, the alignment positions between the first assembly substrate, the second assembly substrate and the third assembly substrate and the transfer substrate may be different from each other. For example, when the alignment between the assembly substrate and the transfer substrate is completed, the relative position of the transfer substrate to the first assembly substrate and the relative position of the transfer substrate to the second assembly substrate may be different from each other. The transfer substrate may shift the alignment position according to the pitch (PITCH) size of the unit pixel (SUB PIXEL) each time the type of assembly substrate changes. When the transfer substrate is sequentially pressed against the first assembly substrate to the third assembly substrate in this way, all three chips can be transferred to the transfer substrate.

[0152] Afterwards, with Fig.11 Similarly, a step is performed in which the semiconductor light emitting element emitting light of the first color to the third color is transferred from the transfer substrate to the wiring substrate by pressing the transfer substrate against the wiring substrate.

[0153] according to Fig.12 According to the manufacturing method, in order to manufacture a display device including a RED chip, a GREEN chip, and a BLUE chip, three types of assembly substrates and one type of transfer substrate are required.

[0154] With the above Fig.11 and Fig.12 Differently, according to Fig.13 , each RED chip, GREEN chip and BLUE chip can be assembled on one assembly substrate (RGB integrated template). In this state, each of the RED chip, GREEN chip and BLUE chip can be transferred to the wiring substrate through the same transfer substrate (RGB integrated template).

[0155] according to Fig.13 According to the manufacturing method, in order to manufacture a display device including a RED chip, a GREEN chip, and a BLUE chip, one type of assembly substrate and one type of transfer substrate are required.

[0156] As described above, in the case of manufacturing a display device including semiconductor light emitting elements that emit light of colors different from each other, the manufacturing method can be implemented in various ways.

[0157] The present invention relates to a method for manufacturing a display device composed of semiconductor light-emitting elements that emit red, green and blue light by self-assembly, characterized in that a voltage can be applied individually or selectively to assembly electrodes by using a probe.

[0158] In the present invention, the substrate on which the semiconductor light emitting element is assembled may be an assembly substrate or a wiring substrate. In this specification, the substrate may refer to both the assembly substrate and the wiring substrate.

[0159] First, refer to Fig.14 and Fig.15 , the problems that occur when red, green, and blue semiconductor light emitting elements are assembled on an existing assembly substrate or wiring substrate are explained.

[0160] Fig.14 is a diagram showing the structure of a conventional substrate on which an assembly electrode is formed, Fig.15 This is a diagram showing a connection structure for voltage application between assembly electrodes formed on a conventional substrate.

[0161] As mentioned above, the self-assembly method is a method in which the semiconductor light emitting element 1050 is dispersed in a fluid and then assembled on the substrate 1000 using a magnetic field and an electric field. Fig.14 The substrate 1000 used in the self-assembly method needs to include an assembly electrode 1010 for forming an electric field. Here, the substrate used in the self-assembly method refers to a substrate on which the semiconductor light emitting element 1050 is directly mounted by self-assembly, and is not a substrate on which the semiconductor light emitting element 1050 is mounted by transfer or the like.

[0162] When a voltage is applied to the assembly electrode 1010 , an electric field is formed on one side of the substrate 1000 . The semiconductor light emitting element 1050 is attracted to one side of the substrate 1000 by the electric field and is disposed in the unit 1020 .

[0163] Specifically, two adjacent assembled electrodes 1010 form an electrode pair 1011, and each assembled electrode 1010 forming the electrode pair 1011 can be applied with voltages of different polarities to form an electric field. The unit 1020 for accommodating the semiconductor light emitting element 1050 can be formed to overlap with the assembled electrodes 1010 forming the electrode pair 1011.

[0164] If the semiconductor light emitting element 1050 emitting red, green and blue light is assembled on the substrate 1000, Fig.14 As shown, the lines 1011R, 1011G, and 1011B in which semiconductor light emitting elements emitting red light, semiconductor light emitting elements emitting green light, and semiconductor light emitting elements emitting blue light are assembled can be repeated in sequence.

[0165] On the other hand, according to the structure of the conventional substrate 1000 , the assembly electrodes 1010 to which voltages of the same polarity are applied are connected at one end of the substrate 1000 by the bus bar 1030 , whereby voltages are simultaneously applied to all the assembly electrodes 1010 connected by the bus bar 1030 .

[0166] If the semiconductor light emitting element 1050 emitting red, green and blue light is assembled on the substrate 1000, as shown in FIG. Fig.15 As shown, the assembled electrodes to which the voltage of the same polarity is applied in the line 1011R assembled with the semiconductor light emitting elements emitting red light, the assembled electrodes to which the voltage of the same polarity is applied in the line 1011G assembled with the semiconductor light emitting elements emitting green light, and the assembled electrodes to which the voltage of the same polarity is applied in the line 1011B assembled with the semiconductor light emitting elements emitting blue light can be connected by the bus bar 1030. At this time, in order to prevent a short circuit, the assembled electrode 1010 and the bus bar 1030 can be formed on different insulating layers from each other, and then electrically connected using a via hole 1040.

[0167] However, such a structure has the following problem: when a short circuit occurs between adjacent assembly electrodes 1010 at a certain location, leakage occurs throughout the substrate 1000 , making it impossible to assemble the semiconductor light emitting element 1050 in the entire area of ​​the substrate 1000 .

[0168] In addition, additional processes must be added when manufacturing the substrate 1000. In particular, the addition of a mask process for patterning the assembly electrode 1010 and the busbar 1030 on different insulating layers and a mask process for forming the through hole 1040 results in at least two more expensive photolithography processes, so there is a problem of a sharp increase in the manufacturing cost of the substrate 1000.

[0169] The method for manufacturing a display device according to an embodiment of the present invention is used to solve the above-mentioned problems.

[0170] Fig.16 1 is a diagram showing the structure of a substrate on which an assembly electrode according to an embodiment of the present invention is formed. Fig.17 It means the probe passes Fig.16 A diagram showing a state in which the opening of the substrate is in contact with the assembly electrode.

[0171] Next, a method for manufacturing a display device according to an embodiment of the present invention will be described.

[0172] In the method for manufacturing a display device according to the embodiment of the present invention, the structure of the substrate 2000 and the electric field application method are different from the existing self-assembly method.

[0173] First, the step of (a) placing the semiconductor light emitting element 1050 provided with a magnet into the fluid chamber can be performed in the same manner as in the conventional self-assembly method.

[0174] Next, the step (b) of moving the substrate 2000 to the assembly position may be performed. At this time, the substrate 2000 may include an assembly electrode 2020 extending in one direction, and the assembly position may be the upper part of the fluid chamber, which is open, and may be configured so that the surface of the substrate 2000 on which the semiconductor light emitting element 1050 is assembled faces the bottom surface of the fluid chamber.

[0175] According to an embodiment of the present invention, the substrate 2000 may have the following structure.

[0176] The substrate 2000 may include: a base portion 2010 formed with an assembly electrode 2020; an insulating layer 2030 stacked on the base portion 2010 in a manner of covering the assembly electrode 2020; and a partition wall 2050, which forms a cell 2040 for arranging a semiconductor light emitting element 1050 along an extending direction of the assembly electrode 2020 in a manner of overlapping with a portion of the assembly electrode 2020, and is stacked on the insulating layer 2030. Since the structure is the same as that of the existing substrate 1000, a detailed description thereof is omitted.

[0177] According to an embodiment of the present invention, the assembly electrodes 2020 included in the substrate 2000 are separated from each other and may include openings 2060 that expose a portion of both end portions of the assembly electrodes 2020 .

[0178] According to an embodiment of the present invention, the assembled electrodes 2020 may be electrically separated by structures separated from each other, and an electrical signal may be applied individually using the portions exposed through the openings 2060 .

[0179] The opening 2060 may be formed to penetrate the insulating layer 2030 and the partition wall 2050 overlapping a portion of both end portions of each assembly electrode 2020. For example, the opening 2060 may be formed by masking and etching.

[0180] According to the embodiment of the present invention, the two additional photolithography processes for realizing the structure of the existing substrate 1000 of RGB can be reduced to one, thereby having the effect of simplifying the manufacturing process and reducing the manufacturing cost.

[0181] Next, a step (c) of applying magnetic force to the semiconductor light emitting element 1050 to move the semiconductor light emitting element 1050 placed in the fluid chamber in one direction may be performed. The magnetic force may be formed by a magnet array disposed on the other side of the substrate 2000 .

[0182] Next, a step (d) of forming an electric field to place the semiconductor light emitting element 1050 at a predetermined position of the substrate 2000 , that is, the unit 2040 may be performed. The electric field may be formed by applying a voltage to the assembly electrode 2020 .

[0183] According to an embodiment of the present invention, by Fig.16 The probe p shown is in contact with at least one of the parts of both ends of the assembly electrode 2020 exposed through the opening 2060, and a voltage is applied to the assembly electrode 2020 alone to form an electric field.

[0184] For example, the probe p may be brought into contact with one of the two end portions of any one of the assembled electrodes 2020a of the two assembled electrodes 2020 forming the electrode pair 2021, and the probe p may be brought into contact with the other of the two end portions of the other assembled electrode 2020b.

[0185] According to an embodiment of the present invention, the probes p may include a first probe p1 disposed at one end of both ends of the assembly electrode 2020 and a second probe p2 disposed at the other end of the assembly electrode 2020 .

[0186] In addition, a plurality of first probes p1 and second probes p2 may be provided, for example, they may be provided according to the number of the assembled electrodes 2020 .

[0187] According to this, the first probe p1 can be brought into contact with any one of the two assembled electrodes 2020 forming the electrode pair 2021 , and the second probe p2 can be brought into contact with the other assembled electrode 2020b .

[0188] For example, when a voltage is applied to the plurality of assembled electrodes 2020 , the first probe p1 and the second probe p2 may contact the assembled electrodes 2020 sequentially or simultaneously.

[0189] For example, the first probe p1 and the second probe p2 may be disposed and mounted on a cover (not shown), and the first probe p1 and the second probe p2 may be brought into contact with the assembly electrode 2020 by moving the cover in a vertical and / or horizontal direction.

[0190] In addition, the plurality of probes p may be separated from each other and driven independently. As described above, the probes p may be driven in various ways and are not limited to a specific driving method.

[0191] In this specification, the description on the driving of the probe p is replaced by the above description, and the description thereof is omitted below.

[0192] On the other hand, when two or more semiconductor light emitting elements 1050 emitting red, green, and blue light are assembled on the substrate 2000, the aforementioned steps (a) to (d) may be repeatedly performed as follows.

[0193] First, in step (a), a semiconductor light emitting element 1050 emitting light of a first color (red, green or blue) is placed in a fluid chamber, and then steps (b) to (d) are performed.

[0194] If the assembly of the semiconductor light emitting element emitting light of the first color is completed, then a step of removing the semiconductor light emitting element 1050 emitting light of the first color remaining in the fluid chamber may be performed.

[0195] Thereafter, return to step (a), place a semiconductor light emitting element 1050 that emits a second color (red, green or blue, different from the first color) into the fluid chamber, and then perform steps (b) to (d).

[0196] On the other hand, in step (d), the electric field can be formed by bringing the probe p into contact with only the assembly electrode 2020 of a specific line.

[0197] Specifically, the assembly electrodes 2020 may be divided into a plurality of groups according to the emission colors of the semiconductor light emitting elements 1050 overlapping with the respective assembly electrodes 2020 .

[0198] For example, it can be distinguished into a first group consisting of assembled electrodes 2020R of semiconductor light emitting elements 1050 that emit red light, a second group consisting of assembled electrodes 2020G of semiconductor light emitting elements 1050 that emit green light, and a third group consisting of assembled electrodes 2020B of semiconductor light emitting elements 1050 that emit blue light.

[0199] The assembled electrodes 2020 group can be selectively applied with voltage according to the color of light emitted by the semiconductor light emitting element 1050 placed in the fluid chamber. That is, when a semiconductor light emitting element 1050 emitting red light is placed in the fluid chamber, a voltage can be applied only to the assembled electrodes 2020R of the first group, when a semiconductor light emitting element 1050 emitting green light is placed in the fluid chamber, a voltage can be applied only to the assembled electrodes 2020G of the second group, and when a semiconductor light emitting element 1050 emitting blue light is placed in the fluid chamber, a voltage can be applied only to the assembled electrodes 2020B of the third group. Here, applying voltage means that the probe p is brought into contact with the assembled electrodes 2020 of the corresponding group.

[0200] As described above, since voltage is applied only to a specific group of assembly electrodes 2020 when assembling semiconductor light emitting elements 1050 that emit light of a specific color, semiconductor light emitting elements 1050 can be arranged at assembly electrodes 2020 of a specific line.

[0201] By the aforementioned method, the semiconductor light emitting elements 1050 emitting different colors can be assembled on the substrate 2000. The substrate 2000 manufactured by the aforementioned method can include the semiconductor light emitting elements 1050 emitting red, green and blue light.

[0202] The following describes in detail the method of applying a voltage signal to the assembly electrode 2020.

[0203] Fig.18 1 is a conceptual diagram showing a voltage application method for an assembled electrode according to an embodiment of the present invention. Fig.19 3 is a graph showing voltage signals applied to respective assembled electrodes when assembling RGB according to an embodiment of the present invention.

[0204] Reference Fig.18 In order to apply voltage to the assembly electrode 2020, a self-assembly device may be used. The self-assembly device may include: a power supply unit 3000, a control unit 4000, and a probe p.

[0205] The power supply unit 3000 may generate a voltage signal for forming an electric field, and the control unit 4000 may convert the voltage signal generated in the power supply unit 3000 .

[0206] The probes p may apply the voltage signal converted by the control unit 4000 to the assembly electrodes 2020 . The probes p may apply voltage to the assembly electrodes 2020 by respectively contacting the assembly electrodes 2020 exposed through the openings 2060 .

[0207] The probe p can be connected to the power supply unit 3000 and the control unit 4000 and apply a specific voltage signal to each assembled electrode 2020. The control unit 4000 may include a first control unit 4000a connected to the first probe p1 and a second control unit 4000b connected to the second probe p2. The first control unit 4000a and the second control unit 4000b may independently convert the voltage signal generated in the power supply unit 3000.

[0208] The voltage signal generated at the power supply unit 3000 may be applied to the assembly electrode 2020 through the probe p. The power supply unit 3000 may generate an AC voltage signal.

[0209] The control unit 4000 can convert the voltage signal generated by the power supply unit 3000 into a pulse form of a predetermined frequency so as to form a voltage difference between one end and the other end of the assembly electrode 2020. Here, the one end and the other end of the assembly electrode 2020 that form the voltage difference may refer to one end of any one electrode 2020a and the other end of the other electrode 2020b of the two assembly electrodes 2020 forming the electrode pair 2021.

[0210] On the other hand, Fig.19 When the semiconductor light emitting element 1050 emitting red, green and blue light is assembled on the substrate 2000, as described above, the semiconductor light emitting element 1050 can be formed as shown in the curve Figure 1 A voltage signal is applied to a specific group of assembled electrodes 2021R, 2021G, and 2021B.

[0211] Specifically, when assembling the semiconductor light emitting element 1050 that emits light of the first color, a step of forming an electric field by applying a voltage to the assembly electrodes 2020 belonging to one of the first to third groups may be performed, and the semiconductor light emitting element 1050 that emits light of the first color may be placed in the group of assembly electrodes 2020 that form the electric field. At this time, a pulse-shaped voltage signal may be applied to the assembly electrodes 2020 of the group that forms the electric field, and the assembly electrodes 2020 of the remaining groups may maintain a ground voltage state.

[0212] Next, when assembling a semiconductor light emitting element 1050 that emits light of a second color, the assembled semiconductor light emitting element 1050 that emits light of a first color can be kept placed on the substrate 2000, and voltage can be continuously applied to the assembled electrode 2020 to which voltage has been applied to prevent it from detaching from the substrate 2000, and voltage can be newly applied to the assembled electrode 2020 belonging to another group.

[0213] In the above manner, the semiconductor light emitting element 1050 emitting red, green, and blue light can be assembled on the substrate 2000 .

[0214] As described above, according to an embodiment of the present invention, a method of applying a voltage to the assembly electrode 2020 by bringing the probe p into contact with the assembly electrode 2020 through the opening 2060 is adopted, so that a voltage can be applied to each assembly electrode 2020 individually or selectively, and the voltage applied to each assembly electrode 2020 can be controlled, thereby having the effect of effectively assembling the semiconductor light-emitting element 1050 emitting red, green and blue light onto the substrate 2000.

[0215] The method for manufacturing a display device according to the embodiment of the present invention may further include a step of (e) detecting whether there are defects in the assembled electrode 2020 , and this step may also be implemented using a probe p.

[0216] Specifically, step (e) can be achieved by making the probe p contact a part of the two ends of the assembled electrode 2020 exposed through the opening 2060 to measure the resistance value of the assembled electrode 2020, and when the measured resistance value is not within the predetermined resistance value range, it can be determined that there is a defect in the corresponding assembled electrode 2020.

[0217] According to an embodiment of the present invention, it is possible to detect whether the assembled electrode 2020 is short-circuited or not.

[0218] Fig. 20 is a conceptual diagram showing a method of detecting whether an assembled electrode is short-circuited or not according to an embodiment of the present invention. Fig.21 This is a conceptual diagram showing a method of detecting whether there is a short circuit between adjacent assembly electrodes according to an embodiment of the present invention.

[0219] First, whether the individual assembled electrodes 2020 are short-circuited can be detected by detecting the resistance value between the two ends of each assembled electrode 2020.

[0220] Through the following steps, it is possible to detect whether the individually assembled electrode 2020 is short-circuited.

[0221] First, a step of bringing the first probe needle p1 into contact with the assembly electrode 2020 exposed through the opening 2060 on one end side of one or more assembly electrodes 2020 may be performed.

[0222] Next, a step of bringing the second probes p2 into contact with the assembly electrode 2020 exposed through the opening 2060 on the other end side of the assembly electrode 2020 contacted by the first probes p1 may be performed.

[0223] Next, a step of measuring a resistance value between the first probe p1 and the second probe p2 may be performed on the assembly electrode 2020 to which the first probe p1 and the second probe p2 contact.

[0224] When the resistance value measured in the manner described above is not within the preset resistance value range, it can be determined that the corresponding assembled electrode 2020 has a short circuit defect.

[0225] In addition, whether there is a short circuit between adjacent assembled electrodes 2020 can be detected by measuring the resistance value between one end or the other end of the first assembled electrode 2020a and the other end or one end of the second assembled electrode 2020b that are adjacent to each other in the assembled electrodes 2020. At this time, the adjacent assembled electrodes 2020 may be the assembled electrodes 2020 that form the electrode pair 2021, or may not be.

[0226] Whether short circuit occurs between adjacent assembly electrodes 2020 can be detected by the following steps.

[0227] First, a step of bringing the first probe p1 into contact with the first assembly electrode 2020a exposed through the opening 2060 at one end of the first assembly electrode 2020a or bringing the second probe p2 into contact with the first assembly electrode 2020a exposed through the opening 2060 at the other end of the first assembly electrode 2020a may be performed.

[0228] Next, a step of bringing the second probe p2 into contact with the second assembly electrode 2020b exposed through the opening 2060 at the other end of the second assembly electrode 2020b or bringing the first probe p1 into contact with the second assembly electrode 2020b exposed through the opening 2060 at one end of the second assembly electrode 2020b may be performed.

[0229] Next, a step of measuring the resistance value between the first probe p1 contacting the first assembly electrode 2020a and the second probe p2 contacting the second assembly electrode 2020b, or between the second probe p2 contacting the first assembly electrode 2020a and the first probe p1 contacting the second assembly electrode 2020b may be performed.

[0230] When the resistance value measured in the manner described above is not within the preset resistance value range, it can be determined that a short circuit defect exists between adjacent assembly electrodes 2020 .

[0231] The aforementioned step of detecting whether the assembled electrode 2020 has defects is preferably performed before self-assembly, for example, before the step of moving the substrate 2000 to the assembly position.

[0232] According to an embodiment of the present invention, a structure in which a portion of the two ends of the assembled electrode 2020 are exposed is realized by forming an opening 2060, and by making the probe p contact the exposed portion of the assembled electrode 2020, it is possible to simply and easily detect whether the assembled electrode 2020 has defects.

[0233] The present invention described above is not limited to the configurations and methods of the above-described embodiments, and various modifications may be made to the above-described embodiments by selectively combining all or part of the embodiments.

Claims

1. A method for manufacturing a display device, characterized in that: include: (a) placing a semiconductor light emitting element provided with a magnet into a fluid chamber; (b) a step of moving a substrate, which is formed to extend in one direction and includes an assembly electrode covered by an insulating layer and an opening that exposes a portion of both end portions of the assembly electrode, to an assembly position; (c) applying a magnetic force to the semiconductor light emitting element so as to move the semiconductor light emitting element placed in the fluid chamber in one direction; and (d) forming an electric field so as to place the moved semiconductor light emitting element at a predetermined position on the substrate, In the step (d), the electric field is formed by bringing a probe into contact with the assembly electrode exposed through the opening and applying a voltage to the assembly electrode alone. The probe contacts at least one of a portion of both end portions of the assembled electrode exposed through the opening.

2. The method for manufacturing a display device according to claim 1, wherein: The substrate comprises: A base portion, formed with the assembly electrode; The insulating layer is stacked on the base portion in a manner of covering the assembly electrode; and The partition wall is stacked on the insulating layer in a manner overlapping with a part of the assembly electrode to form a unit for arranging the semiconductor light emitting element along the extending direction of the assembly electrode. The opening is formed to penetrate the insulating layer and the partition wall.

3. The method for manufacturing a display device according to claim 1, wherein: When two or more semiconductor light emitting elements emitting light of different colors are assembled on the substrate, After placing a semiconductor light-emitting element emitting light of a first color into the fluid chamber in step (a), performing steps (b) to (d), and after removing the semiconductor light-emitting element emitting light of the first color remaining in the fluid chamber, placing a semiconductor light-emitting element emitting light of a second color into the fluid chamber again in step (a), performing steps (b) to (d).

4. The method for manufacturing a display device according to claim 3, characterized in that: The assembly electrodes are divided into a plurality of groups according to the emission colors of the overlapping semiconductor light emitting elements. An electric field is formed by applying voltage to different groups according to the color of light emitted by the semiconductor light emitting element introduced into the fluid chamber.

5. The method for manufacturing a display device according to claim 4, characterized in that: The step of forming the electric field comprises: A step of forming an electric field by applying a voltage to assembled electrodes belonging to any of the groups; and A step of maintaining the formed electric field by continuously applying a voltage to the assembled electrodes belonging to any one of the groups, and applying a voltage to the assembled electrodes belonging to the other group to form an electric field.

6. The method for manufacturing a display device according to claim 1, wherein: Also includes: (e) a step of measuring the resistance value of the assembled electrode by bringing the probe into contact with a portion of both ends of the assembled electrode exposed through the opening, thereby detecting whether the assembled electrode has a defect, When the measured resistance value is not within a preset resistance value range, it is determined that the assembled electrode is defective.

7. The method for manufacturing a display device according to claim 6, wherein: The probe comprises: A plurality of first probes are disposed on one end side of the assembly electrode and contact the one end of the assembly electrode; and A plurality of second probes are disposed on the other end side of the assembly electrode and contact the other end of the assembly electrode.

8. The method for manufacturing a display device according to claim 7, characterized in that: The step (e) comprises: The step of detecting whether a single assembled electrode is short-circuited by measuring the resistance value between both ends of each assembled electrode.

9. The method for manufacturing a display device according to claim 8, characterized in that: The step of detecting whether a single assembled electrode is short-circuited comprises: a step of bringing the first probe into contact with the assembly electrode exposed through the opening on one end side of one or more of the assembly electrodes; a step of bringing the second probe into contact with the assembled electrode exposed through the opening on the other end side of the assembled electrode contacted by the first probe; and A step of measuring a resistance value between the first probe and the second probe of the assembled electrode with which the first probe and the second probe are in contact.

10. The method for manufacturing a display device according to claim 7, wherein: The step (e) comprises: The step of detecting whether the adjacent assembled electrodes are short-circuited by measuring the resistance value between one end or the other end of a first assembled electrode and the other end or one end of a second assembled electrode adjacent to each other in the assembled electrodes.

11. The method for manufacturing a display device according to claim 10, characterized in that: The step of detecting whether there is a short circuit between adjacent assembled electrodes comprises: A step of bringing the first probe into contact with the first assembled electrode exposed through the opening on one end side of the first assembled electrode, or bringing the second probe into contact with the first assembled electrode exposed through the opening on the other end side of the first assembled electrode; a step of bringing the second probe into contact with the second assembled electrode exposed through the opening on the other end side of the second assembled electrode, or bringing the first probe into contact with the second assembled electrode exposed through the opening on one end side of the second assembled electrode; and A step of measuring a resistance value between the first probe in contact with the first assembled electrode and the second probe in contact with the second assembled electrode, or a step of measuring a resistance value between the second probe in contact with the first assembled electrode and the first probe in contact with the first assembled electrode.

12. A self-assembly device that forms an electric field to assemble a semiconductor light-emitting element on a substrate, wherein the substrate is formed to extend in one direction and includes an assembly electrode covered by an insulating layer and an opening that exposes a portion of both ends of the assembly electrode, characterized in that: The self-assembly device comprises: A power supply unit, generating a voltage signal; a control unit that converts the generated voltage signal; and a probe, applying the converted voltage signal to the assembled electrode; The probes are respectively in contact with the assembled electrodes exposed through the openings to apply voltage to the assembled electrodes. The probe contacts at least one of a portion of both end portions of the assembled electrode exposed through the opening.

13. The self-assembly device according to claim 12, characterized in that: The probe comprises: A plurality of first probes are disposed on one end side of the assembly electrode and contact the one end of the assembly electrode; and A plurality of second probes are disposed on the other end side of the assembly electrode and contact the other end of the assembly electrode.

14. The self-assembly device according to claim 13, characterized in that: The control unit includes: A first control unit connected to the first probe; and A second control unit connected to the second probe; The first control unit and the second control unit independently convert the generated voltage signals.

15. The self-assembly device according to claim 13, characterized in that: The probe is brought into contact with a part of both end portions of the assembled electrode exposed through the opening to measure the resistance value of the assembled electrode, thereby detecting a defect of the assembled electrode.

16. The self-assembly device according to claim 15, characterized in that: When the measured resistance value is not within a preset resistance value range, it is determined that the assembled electrode is defective.

17. The self-assembly device according to claim 13, characterized in that: Whether the adjacent assembled electrodes are short-circuited or not is determined by measuring the resistance value between both ends of the adjacent assembled electrodes.

18. The self-assembly device according to claim 17, characterized in that Whether the adjacent assembled electrodes are short-circuited is determined by measuring the resistance value between the first probe in contact with the assembled electrode exposed through the opening on one end side and the second probe in contact with the assembled electrode exposed through the opening on the other end side.

19. A self-assembly device for assembling a semiconductor light-emitting element on a substrate, characterized in that: The self-assembly device comprises: A power supply unit, generating a voltage signal; a control unit, converting the generated voltage signal into a predetermined form; and A probe is used to apply the converted voltage signal to an assembly electrode formed on the substrate. The probes are in contact with the assembly electrodes respectively to apply voltage to the assembly electrodes, The self-assembly device assembles the semiconductor light emitting element on the substrate, comprising: placing the semiconductor light emitting element into a fluid chamber; moving the substrate into the fluid chamber; and A magnetic force is applied to the semiconductor light emitting element in the fluid chamber to move the semiconductor light emitting element in one direction, and an electric field is formed between the assembly electrodes to place the semiconductor light emitting element at a preset position on the substrate.

20. The self-assembly device according to claim 19, characterized in that The predetermined form of the generated voltage signal is a pulse of a predetermined frequency.

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