Semiconductor device, semiconductor system, moving body, and method for manufacturing semiconductor device

Abstract

Suppress an electrical short circuit between a semiconductor element and a cooler, and efficiently release heat generated by the semiconductor element. The semiconductor device has a laminate, a semiconductor element, and a cooler. The laminate has a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer. The first conductor layer, the first insulator layer, the second conductor layer, the second insulator layer, and the third conductor layer are laminated. The first insulator layer is disposed between the first conductor layer and the second conductor layer to electrically insulate the first conductor layer from the second conductor layer. The second insulator layer is disposed between the second conductor layer and the third conductor layer to electrically insulate the third conductor layer from the second conductor layer. The semiconductor element is mounted on the first conductor layer. The cooler is connected to the third conductor layer.

Description

Technical Field

[0001] The present invention relates to a semiconductor device, a semiconductor system, a moving body, and a method for manufacturing a semiconductor device. Background Art

[0002] Moving bodies such as electric vehicles and electric trains have an electric motor and an inverter that drives the electric motor. A power module is installed in the inverter. The power module has semiconductor elements that generate a large amount of heat. Therefore, the inverter has a cooler that releases the heat generated by the semiconductor elements. The power module has an insulator that electrically insulates the semiconductor elements from the cooler. The insulator conducts the heat generated by the semiconductor elements to the cooler.

[0003] In the technology described in Patent Document 1, the current flowing through a power transistor is monitored, and the power transistor is turned off when the current reaches a certain value (paragraph 0056). Thereby, the power transistor is protected from damage in an overcurrent state (paragraph 0056). In addition, the voltage between the gate and the source of the power transistor is monitored, and the power transistor is turned off when an overvoltage is applied (paragraph 0057). Thereby, the power transistor is protected from damage in an overvoltage state (paragraph 0057).

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2017-005125 Summary of the Invention

[0005] When the insulator that electrically insulates the semiconductor elements from the cooler deteriorates and breaks, an electrical short circuit occurs between the semiconductor elements and the cooler, resulting in malfunctions such as a ground short circuit of the semiconductor elements. Therefore, in order to suppress the occurrence of malfunctions such as a ground short circuit of the semiconductor elements, it is required to always monitor whether the insulator has deteriorated. However, in order to confirm whether the insulator has deteriorated, it is necessary to perform operations such as removing the power module from the inverter of the moving body and measuring the partial discharge voltage of the insulator of the removed power module. Therefore, it is difficult to always monitor whether the insulator has deteriorated. Therefore, in most cases, malfunctions such as a ground short circuit of the semiconductor elements occur suddenly.

[0006] The power module controls a large current and a high voltage. Therefore, when a malfunction such as a ground short circuit of the semiconductor elements occurs, sometimes other electronic devices of the moving body are damaged, or a person riding on the moving body may receive an electric shock. Therefore, an electrical short circuit between the semiconductor elements and the cooler is a fatal malfunction.

[0007] The insulator is composed of ceramics, resin, resin mixed with fillers, etc. The filler is composed of alumina, etc., and is mixed in order to improve the thermal conductivity of the insulator. However, in the case where the insulator is made of ceramics, minute cracks and other initial defects that cause the insulator to break sometimes exist inside the insulator. In addition, in the case where the insulator is made of resin or resin mixed with fillers, initial defects such as holes that cause the insulator to break sometimes exist inside the insulator. Further, in the case where the insulator is made of resin mixed with fillers, initial defects such as aggregation of the filler that cause the insulator to break sometimes exist inside the insulator.

[0008] The technique for protecting semiconductor elements represented by the technique described in Patent Document 1 can suppress a short circuit in the conduction path through which the main current flows, but cannot suppress a ground short circuit of the semiconductor element.

[0009] Therefore, the thickness of the insulator is increased so that the insulation property of the insulator has a sufficient margin. For example, in the case where a power module is installed in an inverter having a power supply voltage of 600V, the thickness of the insulator is increased so that the insulator has an insulation breakdown voltage greater than or equal to 10 times the power supply voltage of 600V, that is, 6000V. However, even in the case where the thickness of the insulator is increased so that the insulation property of the insulator has a sufficient margin, if the initial defects existing inside the insulator cannot be detected before the power module is shipped, the insulator will break and malfunction such as a ground short circuit of the semiconductor element will occur.

[0010] On the other hand, in the design of a power module, heat dissipation design adapted to the operating conditions of the semiconductor element must be performed. In heat dissipation design, thermal resistance is used as an index of heat dissipation performance, and it is considered that the smaller the thermal resistance, the higher the heat dissipation performance. In addition, the thermal resistance is determined by the contribution of only the insulator having a low thermal conductivity, and reducing the thickness of the insulator is effective for reducing the thermal resistance. However, in the case where the thickness of the insulator is increased so that the insulation property of the insulator has a sufficient margin, the thermal resistance of the insulator becomes large. Moreover, in the case where the thermal resistance of the insulator becomes large, it is difficult to sufficiently conduct the heat generated by the semiconductor element to the cooler, and it is difficult to release the heat generated by the semiconductor element to the outside of the power module. As a result, the temperature of the semiconductor element becomes high, and breakage of the semiconductor element, breakage of the aluminum wire of the power module, etc. occur.

[0011] These problems also occur in semiconductor devices other than the power module installed in an inverter that drives an electric motor.

[0012] The present invention has been made in view of these problems. The present invention provides the following semiconductor device that can suppress an electrical short circuit between a semiconductor element and a cooler and can efficiently release the heat generated by the semiconductor element.

[0013] The present invention relates to a semiconductor device.

[0014] The semiconductor device has a laminate, a semiconductor element, and a cooler.

[0015] The laminate has a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer.

[0016] The first conductor layer, the first insulator layer, the second conductor layer, the second insulator layer, and the third conductor layer are laminated. The first insulator layer is disposed between the first conductor layer and the second conductor layer to electrically insulate the first conductor layer from the second conductor layer. The second insulator layer is disposed between the second conductor layer and the third conductor layer to electrically insulate the third conductor layer from the second conductor layer.

[0017] The semiconductor element is mounted on the first conductor layer.

[0018] The cooler is connected to the third conductor layer.

[0019] Effects of the Invention

[0020] According to the present invention, the first conductor layer and the third conductor layer are electrically insulated from the second conductor layer disposed between the first conductor layer and the third conductor layer. Therefore, even if one of the first conductor layer and the third conductor layer is electrically short-circuited with the second conductor layer, the first conductor layer is not electrically short-circuited with the third conductor layer. Thus, it is possible to suppress an electrical short circuit between the semiconductor element mounted on the first conductor layer and the cooler connected to the third conductor layer.

[0021] In addition, according to the present invention, even when the margin of the insulation properties of the first insulator layer and the second insulator layer is reduced, it is possible to suppress an electrical short circuit between the semiconductor element and the cooler. Therefore, the total value of the thicknesses of the first insulator layer and the second insulator layer can be reduced. Therefore, the thermal resistance of the laminate can be reduced. Thus, it is possible to efficiently release the heat generated by the semiconductor element.

[0022] The object, features, aspects, and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a diagram schematically illustrating a semiconductor system according to Embodiment 1.

[0024] Figure 2 is a diagram schematically illustrating a semiconductor system according to Embodiment 1.

[0025] Figure 3 is a cross-sectional view illustrating a method of manufacturing a semiconductor device included in the semiconductor system according to Embodiment 1.

[0026] Figure 4 It is a cross-sectional view schematically showing a cross-section of the power module of Reference Example 1.

[0027] Figure 5 It is a top view schematically showing the upper surface of the power module after removing the molding resin from the power module of Reference Example 1.

[0028] Figure 6 It is a diagram schematically showing the semiconductor system of Embodiment 2.

[0029] Figure 7 It is a diagram schematically showing the semiconductor system of Embodiment 3.

[0030] Figure 8 It is a cross-sectional view explaining the manufacturing method of the semiconductor device included in the semiconductor system of Embodiment 3.

[0031] Figure 9 It is a cross-sectional view schematically showing a cross-section of the semiconductor device of Reference Example 2.

[0032] Figure 10 It is a diagram schematically showing the semiconductor system of Embodiment 4.

[0033] Figure 11 It is a diagram schematically showing the moving body of Embodiment 5. Detailed Embodiments

[0034] 1 Embodiment 1

[0035] 1.1 Heat Dissipation and Insulation

[0036] Figure 1 and Figure 2 It is a diagram schematically showing the semiconductor system of Embodiment 1. Figure 1 It includes a cross-sectional view schematically showing a cross-section of the semiconductor device included in the semiconductor system of Embodiment 1. Figure 2 It includes a top view schematically showing the upper surface of the semiconductor device after removing the molding resin from the semiconductor device included in the semiconductor system of Embodiment 1.

[0037] Figure 1 and Figure 2 The semiconductor device 11 included in the semiconductor system 1 of Embodiment 1 shown in the figure has a laminate 101, a semiconductor element 102, solder 103, a cooler 104, and thermal grease 105.

[0038] The semiconductor element 102 and the solder 103 are disposed on the first main surface 101a of the laminate 101. The solder 103 is disposed between the semiconductor element 102 and the laminate 101. The solder 103 is a bonding material that bonds the semiconductor element 102 to the laminate 101. The solder 103 can also be replaced with other types of bonding materials. For example, the solder 103 can also be replaced with a brazing filler metal. The solder 103 can also be omitted, and the semiconductor element 102 can be directly bonded to the laminate 101.

[0039] The cooler 104 and the thermal grease 105 are disposed on the second main surface 101b of the laminate 101. The second main surface 101b of the laminate 101 is on the side opposite to the side where the first main surface 101a is located. The thermal grease 105 is disposed between the cooler 104 and the laminate 101. The thermal grease 105 fills the gap between the cooler 104 and the laminate 101. The thermal grease 105 is a heat dissipation material that promotes heat conduction from the laminate 101 to the cooler 104. The thermal grease 105 can also be replaced with other types of heat dissipation materials. For example, the thermal grease 105 can also be replaced with a heat sink. The thermal grease 105 can also be omitted, and heat can be directly conducted from the laminate 101 to the cooler 104.

[0040] The laminate 101 is disposed between the semiconductor element 102 and the cooler 104. The laminate 101 separates the semiconductor element 102 from the cooler 104. Thus, the laminate 101 electrically insulates the semiconductor element 102 from the cooler 104. The laminate 101 constitutes a substrate.

[0041] The heat generated by the semiconductor element 102 is sequentially conducted to the cooler 104 via the solder 103, the laminate 101, and the thermal grease 105. The heat conducted to the cooler 104 is released to the outside of the semiconductor device 11 through the cooler 104.

[0042] 1.2 Electrical connection

[0043] As Figure 1 and Figure 2 shown in the figure, the semiconductor device 11 has a first main terminal 111, a second main terminal 112, a first signal terminal 113, a first wire 115, a second wire 116, and a third wire 117. As Figure 1 and Figure 2 shown in the figure, the semiconductor element 102 has a semiconductor substrate 121, a first main electrode 122, a second main electrode 123, and a signal electrode 124. As Figure 1 and Figure 2 shown in the figure, the laminate 101 has a first conductor layer 131.

[0044] The first main electrode 122 and the signal electrode 124 are disposed on the first main surface 121a of the semiconductor substrate 121. The second main electrode 123 is disposed on the second main surface 121b of the semiconductor substrate 121. The second main surface 121b of the semiconductor substrate 121 is on the side of the semiconductor substrate 121 opposite to the side where the first main surface 121a is located.

[0045] The first conductor layer 131 is exposed on the first main surface 101a of the laminate 101.

[0046] One end of the first wire 115 is connected to the first main electrode 122. The other end of the first wire 115 is connected to the first main terminal 111. Thus, the first wire 115 electrically connects the first main terminal 111 and the first main electrode 122.

[0047] The upper surface of the solder 103 is connected to the second main electrode 123. The lower surface of the solder 103 is connected to the first conductor layer 131. One end of the second wire 116 is connected to the first conductor layer 131. The other end of the second wire 116 is connected to the second main terminal 112. Thus, the second wire 116, the first conductor layer 131, and the solder 103 electrically connect the second main terminal 112 and the second main electrode 123.

[0048] One end of the third wire 117 is connected to the signal electrode 124. The other end of the third wire 117 is connected to the first signal terminal 113. Thus, the third wire 117 electrically connects the first signal terminal 113 and the signal electrode 124.

[0049] The second main electrode 123, the semiconductor substrate 121, and the first main electrode 122 form a conduction path through which the main current flows. Therefore, the semiconductor element 102 has a conduction path through which the main current flows.

[0050] The semiconductor element 102 turns on and off the main current flowing from the second main electrode 123 through the semiconductor substrate 121 to the first main electrode 122 in accordance with a signal for controlling the main current input to the signal electrode 124. Therefore, the semiconductor device 11 turns on and off the main current flowing from the second main terminal 112 successively through the second wire 116, the first conductor layer 131, the solder 103, the second main electrode 123, the semiconductor substrate 121, the first main electrode 122, and the first wire 115 to the first main terminal 111 in accordance with a signal for controlling the main current input to the first signal terminal 113.

[0051] The semiconductor element 102 generates heat when the main current flows from the second main electrode 123 through the semiconductor substrate 121 to the first main electrode 122 and when turning on and off the main current.

[0052] In Embodiment 1, the semiconductor element 102 is an insulated gate bipolar transistor (IGBT). When the semiconductor element 102 is an IGBT, the first main electrode 122 is the emitter, the second main electrode 123 is the collector, the signal electrode 124 is the gate, and the signal for controlling the main current is the gate signal. The semiconductor element 102 may also be other types of semiconductor elements. For example, the semiconductor element 102 may be a metal oxide semiconductor field effect transistor (MOSFET), a thyristor, or a diode. When the semiconductor element 102 is a MOSFET, the first main electrode 122 is the source, the second main electrode 123 is the drain, the signal electrode 124 is the gate, and the signal for controlling the main current is the gate signal. When the semiconductor element 102 is a thyristor, the first main electrode 122 is the cathode, the second main electrode 123 is the anode, the signal electrode 124 is the gate, and the signal for controlling the main current is the gate signal. When the semiconductor element 102 is a diode, the first main electrode 122 is the cathode, the second main electrode 123 is the anode, the semiconductor element 102 does not have the signal electrode 124, and the semiconductor device 11 does not have the first signal terminal 113 and the third wire 117.

[0053] The first wire 115, the second wire 116, and the third wire 117 are made of a conductor, preferably made of aluminum.

[0054] The first main terminal 111, the second main terminal 112, and the first signal terminal 113 are electrically connected to the outside of the semiconductor device 11.

[0055] 1.3 Structure of the laminate

[0056] As Figure 1 and Figure 2 shown in the figure, the laminate 101 has a first conductor layer 131, a first insulator layer 132, a second conductor layer 133, a second insulator layer 134, and a third conductor layer 135.

[0057] The first conductor layer 131, the first insulator layer 132, the second conductor layer 133, the second insulator layer 134, and the third conductor layer 135 are laminated. The first conductor layer 131, the first insulator layer 132, the second conductor layer 133, the second insulator layer 134, and the third conductor layer 135 are laminated in such a manner that the conductor layers and the insulator layers are alternately arranged. Two adjacent layers included in the first conductor layer 131, the first insulator layer 132, the second conductor layer 133, the second insulator layer 134, and the third conductor layer 135 are bonded to each other.

[0058] The first insulating layer 132 is disposed between the first conductor layer 131 and the second conductor layer 133. The first insulating layer 132 separates the first conductor layer 131 from the second conductor layer 133. Thus, the first insulating layer 132 electrically insulates the first conductor layer 131 from the second conductor layer 133. The second insulating layer 134 is disposed between the second conductor layer 133 and the third conductor layer 135. The second insulating layer 134 separates the third conductor layer 135 from the second conductor layer 133. Thus, the second insulating layer 134 electrically insulates the third conductor layer 135 from the second conductor layer 133.

[0059] The semiconductor element 102 is joined to the first conductor layer 131 by solder 103. Thus, the semiconductor element 102 is mounted on the first conductor layer 131.

[0060] The cooler 104 contacts the third conductor layer 135 with a heat sink grease 105 interposed therebetween. Thus, the cooler 104 is connected to the third conductor layer 135.

[0061] The second conductor layer 133 is electrically insulated from the conduction path of the semiconductor element 102.

[0062] The first conductor layer 131, the second conductor layer 133, and the third conductor layer 135 are made of a conductor, preferably made of a metal. The first insulating layer 132 and the second insulating layer 134 are made of an insulator, preferably made of a resin.

[0063] Preferably, the first insulating layer 132 has a planar shape smaller than that of the second insulating layer 134. Thus, generation of surface discharge along the side surface of the first insulating layer 132 can be suppressed.

[0064] 1.4 Detection of Insulating Layer Breakage

[0065] As Figure 1 and Figure 2 shown in the figure, the semiconductor system 1 has a semiconductor device 11, a monitoring circuit 12, and a power supply circuit 13. The semiconductor device 11 has a second signal terminal 114 and a fourth wire 118.

[0066] One end of the fourth wire 118 is connected to the second conductor layer 133. The other end of the fourth wire 118 is connected to the second signal terminal 114. Thus, the fourth wire 118 electrically connects the second signal terminal 114 to the second conductor layer 133. Thus, a signal indicating breakage of at least one of the first insulating layer 132 and the second insulating layer 134 can be easily taken out from the semiconductor device 11. The fourth wire 118 may be omitted, and the second signal terminal 114 may be directly electrically connected to the second conductor layer 133.

[0067] The fourth conductor 118 is composed of a conductor, preferably made of aluminum.

[0068] The second signal terminal 114 is electrically connected to the outside of the semiconductor device 11.

[0069] The monitoring circuit 12 is electrically connected to the second signal terminal 114. Thus, the monitoring circuit 12 is electrically connected to the second conductor layer 133. The monitoring circuit 12 detects the voltage of the second conductor layer 133. The monitoring circuit 12 receives a signal indicating damage to at least one of the first insulator layer 132 and the second insulator layer 134. The monitoring circuit 12 detects an electrical short circuit between at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133 based on the received signal. When the monitoring circuit 12 detects an electrical short circuit between at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133, it sends a signal to the power supply circuit 13.

[0070] The power supply circuit 13 is electrically connected to one of the first main terminal 111 and the second main terminal 112. Thus, the power supply circuit 13 is electrically connected to one of the first main electrode 122 and the second main electrode 123. The power supply circuit 13 causes a main current to flow through the semiconductor device 11. The power supply circuit 13 restricts the flow of the main current when it receives a signal from the monitoring circuit 12. Thus, the power supply circuit 13 restricts the flow of the main current when it detects an electrical short circuit between at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133. In Embodiment 1, restricting the flow of the main current means stopping the flow of the main current. Thus, the device having the semiconductor device 11 can be safely stopped.

[0071] 1.5 Fixing and Encapsulation

[0072] As Figure 1 and Figure 2 shown in the figure, the semiconductor device 11 has a housing 106 and a molding resin 107.

[0073] The laminate 101 is fixed to the housing 106 by an adhesive (not shown). The first main surface 101a of the laminate 101 fixed to the housing 106 faces the direction of the housing 106 having the internal space 106i. The first main terminal 111, the second main terminal 112, the first signal terminal 113, and the second signal terminal 114 are fixed to the housing 106.

[0074] The molding resin 107 is filled in the internal space 106i of the housing 106. The molding resin 107 is filled on the first main surface 101a of the laminate 101 so as to overlap with the semiconductor element 102, the solder 103, the first wire 115, the second wire 116, the third wire 117, and the fourth wire 118. The molding resin 107 encapsulates the semiconductor element 102, the solder 103, the first wire 115, the second wire 116, the third wire 117, and the fourth wire 118.

[0075] The housing 106 is made of an insulator, preferably made of resin.

[0076] 1.6 Power module

[0077] The laminate 101, the semiconductor element 102, the solder 103, the housing 106, the molding resin 107, the first wire 115, the second wire 116, the third wire 117, and the fourth wire 118 constitute a power module 141. The power module 141 is mounted on the cooler 104 with a thermal grease 105 interposed therebetween.

[0078] In Embodiment 1, the semiconductor system 1 has one power module 141. However, the semiconductor system 1 may also have two or more power modules 141. Further, in Embodiment 1, the power module 141 has one semiconductor element 102. However, the power module 141 may also have two or more semiconductor elements 102. For example, the power module 141 may have two semiconductor elements 102, and the two semiconductor elements 102 are integrated. Alternatively, the power module 141 may have six semiconductor elements 102, and the six semiconductor elements 102 are integrated. Two or more semiconductor elements 102 may also include two or more types of semiconductor elements. For example, two or more semiconductor elements 102 may include switching elements such as IGBTs and MOSFETs, and freewheeling diodes.

[0079] When the power module 141 has two or more semiconductor elements 102, the conductive layer is patterned such that the power module 141 has two or more first conductive layers 131 on which two or more semiconductor elements 102 are respectively mounted.

[0080] 1.7 Manufacturing method of semiconductor device

[0081] Figure 3 It is a cross-sectional view showing a manufacturing method of a semiconductor device included in the semiconductor system of Embodiment 1.

[0082] When manufacturing the semiconductor device 11, as Figure 3(a) As shown in the figure, a laminate 151 with semiconductor elements is fabricated. The laminate 151 with semiconductor elements has a laminate 101, a semiconductor element 102, and solder 103. The semiconductor element 102 is joined to the first conductive layer 131 by the solder 103. Thus, the semiconductor element 102 is mounted on the first conductive layer 131.

[0083] Next, as Figure 3 (b) As shown in the figure, a housing 152 with terminals is fabricated. The housing 152 with terminals has a first main terminal 111, a second main terminal 112, a first signal terminal 113, a second signal terminal 114, and a housing 106. The first main terminal 111, the second main terminal 112, the first signal terminal 113, and the second signal terminal 114 are fixed to the housing 106. Further, after the housing 152 with terminals is fabricated, the laminate 101 is fixed to the housing 106.

[0084] Next, as Figure 3 (c) As shown in the figure, one end of a first wire 115 is connected to the first main electrode 122, and the other end of the first wire 115 is connected to the first main terminal 111. Further, one end of a second wire 116 is connected to the first conductive layer 131, and the other end of the second wire 116 is connected to the second main terminal 112. Further, one end of a third wire 117 is connected to the signal electrode 124, and the other end of the third wire 117 is connected to the first signal terminal 113. Further, one end of a fourth wire 118 is connected to the second conductive layer 133, and the other end of the fourth wire 118 is connected to the second signal terminal 114.

[0085] Next, as Figure 3 (d) As shown in the figure, a molding resin 107 is filled in the internal space 106i of the housing 106. At this time, the pre-cured fluid of the molding resin 107 is injected into the internal space 106i, and the injected pre-cured fluid is cured to be changed into the molding resin 107.

[0086] Next, as Figure 1 As shown in the figure, a cooler 104 is connected to the third conductive layer 135. At this time, the cooler 104 is in contact with the laminate 101 with a heat sink 105 interposed therebetween.

[0087] 1.8 Comparison between Reference Example 1 and Embodiment 1

[0088] Figure 4 is a cross-sectional view schematically showing a cross section of the power module of Reference Example 1. Figure 5 is a top view schematically showing an upper surface of the power module after removing the molding resin from the power module of Reference Example 1.

[0089] In the power module 841 of Reference Example 1, as Figure 4 and Figure 5 shown, the laminate 801 has a first conductor layer 831, an insulator layer 832, and a second conductor layer 833. The insulator layer 832 electrically insulates the first conductor layer 831 from the second conductor layer 833. The semiconductor element 102 is mounted on the first conductor layer 831. The cooler 104 is connected to the second conductor layer 833.

[0090] In the power module 841, when initial defects are formed in the insulator layer 832 during the manufacture of the laminate 801 and the power module 841 is installed in the device without detecting the formed initial defects, when the insulator layer 832 undergoes dielectric breakdown starting from the initial defects due to voltage, heat, moisture, vibration, etc., the semiconductor element 102 immediately becomes electrically short-circuited to the cooler 104, and malfunctions such as ground short-circuit of the semiconductor element 102 occur.

[0091] In contrast, in Figure 1 and Figure 2 the power module 141 shown, the laminate 101 has a first conductor layer 131, a first insulator layer 132, a second conductor layer 133, a second insulator layer 134, and a third conductor layer 135. The first insulator layer 132 electrically insulates the first conductor layer 131 from the second conductor layer 133. The second insulator layer 134 electrically insulates the third conductor layer 135 from the second conductor layer 133. The semiconductor element 102 is mounted on the first conductor layer 131. The cooler 104 is connected to the third conductor layer 135.

[0092] In the power module 141, when initial defects are formed in the first insulator layer 132 or the second insulator layer 134 during the manufacture of the laminate 101 and the power module 141 is installed in the device without detecting the formed initial defects, when the first insulator layer 132 or the second insulator layer 134 undergoes dielectric breakdown starting from the initial defects due to voltage, heat, moisture, vibration, etc., the semiconductor element 102 does not immediately become electrically short-circuited to the cooler 104, and malfunctions such as ground short-circuit of the semiconductor element 102 do not immediately occur.

[0093] 1.9 Effects of the Invention of Embodiment 1

[0094] According to the invention of Embodiment 1, the first conductor layer 131 and the third conductor layer 135 are electrically insulated from the second conductor layer 133 disposed between the first conductor layer 131 and the third conductor layer 135. Therefore, even if one of the first conductor layer 131 and the third conductor layer 135 is electrically short-circuited with the second conductor layer 133, the first conductor layer 131 will not be electrically short-circuited with the third conductor layer 135. Thus, it is possible to suppress the electrical short-circuit between the semiconductor element 102 mounted on the first conductor layer 131 and the cooler 104 connected to the third conductor layer 135.

[0095] In addition, according to the invention of Embodiment 1, even when the margin of the insulation properties of the first insulator layer 132 and the second insulator layer 134 is reduced, it is possible to suppress the electrical short-circuit between the semiconductor element 102 and the cooler 104. Therefore, the total value of the thicknesses of the first insulator layer 132 and the second insulator layer 134 can be reduced. For example, in the power module 841, the thickness of the insulator layer 832 must be determined such that the insulator layer 832 has an insulation breakdown voltage of about 10 times the power supply voltage, but in the power module 141, the thicknesses of the first insulator layer 132 and the second insulator layer 134 can be determined such that the first insulator layer 132 and the second insulator layer 134 have an insulation breakdown voltage of about 2 times the power supply voltage. Thus, the thermal resistance of the laminate 101 can be reduced. As a result, the heat generated by the semiconductor element 102 can be efficiently released.

[0096] 2 Embodiment 2

[0097] 2.1 Main differences between Embodiment 1 and Embodiment 2

[0098] Figure 6 is a diagram schematically illustrating the semiconductor system of Embodiment 2. Figure 6 includes a cross-sectional view schematically illustrating the cross-section of the semiconductor device included in the semiconductor system of Embodiment 2.

[0099] Figure 6 The illustrated semiconductor system 2 of Embodiment 2 and Figure 1 and Figure 2 The illustrated semiconductor system 1 of Embodiment 1 are mainly different in the following points. Regarding points other than the following points, the same structure as that adopted in the semiconductor system 1 is also adopted in the semiconductor system 2.

[0100] As Figure 6 illustrated, the semiconductor system 2 has a warning display circuit 14.

[0101] When the monitoring circuit 12 detects an electrical short circuit between the conductor layer of at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133, it sends a signal to the warning display circuit 14.

[0102] When the warning display circuit 14 receives a signal from the monitoring circuit 12, it gives a warning through warning display. Thus, when the warning display circuit 14 detects an electrical short circuit between the conductor layer of at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133, it gives a warning through warning display. The warning display circuit 14 is a warning device that gives a warning through warning display. The warning display circuit 14 can also be replaced by a warning device that gives a warning in a way other than warning display. For example, the warning display circuit 14 can also be replaced by a warning sound generation circuit that gives a warning through warning sound.

[0103] In addition, in the semiconductor system 2, restricting the flow of the main current means reducing the output voltage of the power supply circuit 13 without stopping the flow of the main current.

[0104] 2.2 Effects of the Invention of Embodiment 2

[0105] The invention of Embodiment 2 has the same effects as the invention of Embodiment 1.

[0106] In addition, according to the invention of Embodiment 2, the user of the device equipped with the power module 141 can identify an electrical short circuit between the conductor layer of at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133 through a warning. Thus, when one of the first conductor layer 131 and the second conductor layer 133 is electrically short-circuited with the second conductor layer 133, but the other of the first conductor layer 131 and the second conductor layer 133 is not electrically short-circuited with the second conductor layer 133, and the semiconductor element 102 and the cooler 104 are not electrically short-circuited, the power module 141 can be replaced with a new power module.

[0107] In addition, according to the invention of Embodiment 2, before the power module 141 is replaced with a new power module 141, the flow of the main current is not stopped, and the output voltage of the power supply circuit 13 is reduced. Thus, it is possible to suppress adverse conditions such as a ground short circuit of the semiconductor element 102 that occur when one of the first insulator layer 132 and the second insulator layer 134 is damaged and then the other of the first insulator layer 132 and the second insulator layer 134 is also damaged. In addition, it is possible to suppress adverse conditions caused by the sudden stop of the device equipped with the power module 141 that occur when one of the first insulator layer 132 and the second insulator layer 134 is damaged.

[0108] 3 Embodiment 3

[0109] 3.1 Main differences between Embodiment 1 and Embodiment 3

[0110] Figure 7 FIG. is a schematic diagram showing the semiconductor system of Embodiment 3. Figure 7 FIG. includes a cross-sectional view schematically showing the cross-section of the semiconductor device included in the semiconductor system of Embodiment 3.

[0111] Figure 7 The illustrated semiconductor system 3 of Embodiment 3 and Figure 1 and Figure 2 The illustrated semiconductor system 1 of Embodiment 1 are mainly different in the following points. Regarding points other than the following points, the same structure as that adopted in the semiconductor system 1 is also adopted in the semiconductor system 3.

[0112] In the semiconductor system 3, the semiconductor device 11 does not have a housing 106 that fixes the first main terminal 111, the second main terminal 112, and the first signal terminal 113.

[0113] In addition, in the semiconductor system 3, the semiconductor device 11 does not have a first wire 115 that electrically connects the first main terminal 111 to the main electrode 122. Instead, the semiconductor device 11 has a solder 108 that joins the first main terminal 111 to the main electrode 122 and electrically connects the first main terminal 111 to the main electrode 122.

[0114] In addition, in the semiconductor system 3, the semiconductor device 11 does not have a second signal terminal 114 and a fourth wire 118. Instead, the semiconductor device 11 has a lead 109. One end of the lead 109 is connected to the second conductor layer 133. The other end of the lead 109 is connected to the monitoring circuit 12. Thus, the monitoring circuit 12 is electrically connected to the second conductor layer 133.

[0115] In addition, in the semiconductor system 3, the first conductor layer 131 is a metal plate, and a solder 103 joins the second main electrode 123 to the first conductor layer 131 and electrically connects the second main electrode 123 to the first conductor layer 131.

[0116] In addition, in the semiconductor system 3, the first insulator layer 132 and the second conductor layer 133 form a first integral component 161. In addition, the second insulator layer 134 and the third conductor layer 135 form a second integral component 162.

[0117] In addition, in the semiconductor system 3, the semiconductor element 102, the first conductor layer 131, and the first integral component 161 are disposed on the first main surface 162a of the second integral component 162. Further, the molding resin 107 covers a part of the first main terminal 111, a part of the second main terminal 112, a part of the first signal terminal 113, the semiconductor element 102, the first conductor layer 131, the first integral component 161, and the second integral component 162 from the side of the first main surface 162a of the second integral component 162. However, the molding resin 107 does not cover the second main surface 162b of the second integral component 162. The first main surface 162a of the second integral component 162 is on the side where the second insulator layer 134 is disposed. The second main surface 162b of the second integral component 162 is on the side where the third conductor layer 135 is disposed. Thus, the molding resin 107 can be formed by the transfer molding method. Thus, the semiconductor device 11 can be easily manufactured.

[0118] 3.2 Manufacturing method of semiconductor device

[0119] Figure 8 It is a cross-sectional view for explaining the manufacturing method of the semiconductor device included in the semiconductor system of Embodiment 3.

[0120] When manufacturing the semiconductor device 11, as Figure 8 shown in (a), the semiconductor element 102 is mounted on the first conductor layer 131. At this time, the semiconductor element 102 is joined to the first conductor layer 131 by the solder 103.

[0121] Next, as Figure 8 shown in (b), the lead frame 171 is joined to the semiconductor element 102. At this time, the first main electrode 122 is joined to the first main terminal 111 included in the lead frame 171 by the solder 108. The lead frame 171 is formed by processing a single metal plate. The lead frame 171 has the first main terminal 111, the second main terminal 112, and the first signal terminal 113.

[0122] Next, as Figure 8 shown in (c), one end of the third wire 117 is connected to the signal electrode 124, and the other end of the third wire 117 is connected to the first signal terminal 113 included in the lead frame 171. Further, one end of the second wire 116 is connected to the first conductor layer 131, and the other end of the second wire 116 is connected to the second main terminal 112 included in the lead frame 171.

[0123] Next, as Figure 8As shown in (d), a first integrated component 161 having a first insulator layer 132 and a second conductor layer 133 laminated thereon is fabricated. At this time, a pre-cured fluid of an insulating resin is applied onto the second conductor layer 133, and the applied pre-cured fluid is semi-cured to change into the first insulator layer 132. The first integrated component 161 has a first main surface 161a on the side where the first insulator layer 132 is disposed and a second main surface 161b on the side where the second conductor layer 133 is disposed.

[0124] In addition, a second integrated component 162 having a second insulator layer 134 and a third conductor layer 135 laminated thereon is fabricated. At this time, a pre-cured fluid of an insulating resin is applied onto the third conductor layer 135, and the applied pre-cured fluid is semi-cured to change into the second insulator layer 134. The second integrated component 162 has a first main surface 162a on the side where the second insulator layer 134 is disposed and a second main surface 162b on the side where the third conductor layer 135 is disposed.

[0125] In addition, the semiconductor element 102, the first conductor layer 131, the first integrated component 161, and the second integrated component 162 are mounted on the lower mold 173 such that the semiconductor element 102, the first conductor layer 131, and the first integrated component 161 are disposed on the first main surface 162a of the second integrated component 162. At this time, the first main surface 161a of the first integrated component 161 and the first main surface 162a of the second integrated component 162 face upward.

[0126] Next, as Figure 8 shown in (e), the molding resin 107 is molded by a transfer molding method. The molding resin 107 covers a part of the lead frame 171, the solder 108, the semiconductor element 102, the solder 103, the first conductor layer 131, the first integrated component 161, and the second integrated component 162 from the side of the first main surface 162a of the second integrated component 162, and does not cover the second main surface 162b of the second integrated component 162. When molding the molding resin 107, the upper mold 174 is used to close the lower mold 173. In addition, a pre-cured fluid of the molding resin 107 is injected into the mold 175 having the lower mold 173 and the upper mold 174 closing it, and the injected pre-cured fluid is cured to change into the molding resin 107. Thus, a part of the lead frame 171, the solder 108, the semiconductor element 102, the solder 103, the first conductor layer 131, and the first integrated component 161 are encapsulated by the molding resin 107.

[0127] The pre-curing fluid of the molding resin 107 is composed of a thermosetting resin. Therefore, the pre-curing fluid of the molding resin 107 cures inside the mold 175 due to being placed under high temperature and high pressure. When the pre-curing fluid of the molding resin 107 cures, the semi-cured first insulator layer 132 and second insulator layer 134 also fully cure, and the first insulator layer 132 adheres to the first conductor layer 131 and the second conductor layer 133, and the second insulator layer 134 adheres to the second conductor layer 133 and the third conductor layer 135.

[0128] In addition, one end of the lead wire 109 is connected to the second conductor layer 133 before the second conductor layer 133 is installed on the lower mold 173. When the second conductor layer 133 is installed on the lower mold 173, the other end of the lead wire 109 is arranged in such a way that it is not buried in the molding resin 107.

[0129] Next, as Figure 8 shown in (f), the semiconductor element-carrying laminate 151 having the lead frame 171, solder 108, semiconductor element 102, solder 103, laminate 101, and molding resin 107 is taken out from the inside of the mold 175. In addition, the taken-out semiconductor element-carrying laminate 151 is processed. At this time, the first main terminal 111, second main terminal 112, and first signal terminal 113 of the remaining lead frame 171 are left, and unnecessary parts such as the connecting rod and frame part of the lead frame 171 are cut off. In addition, the remaining first main terminal 111, second main terminal 112, and first signal terminal 113 are formed to give appropriate outer shapes to the first main terminal 111, second main terminal 112, and first signal terminal 113.

[0130] Next, as Figure 7 shown, the cooler 104 is connected to the third conductor layer 135. At this time, the cooler 104 contacts the laminate 101 with the heat dissipation grease 105 interposed therebetween.

[0131] 3.3 Comparison between Reference Example 2 and Embodiment 3

[0132] Figure 9 is a cross-sectional view schematically showing the cross-section of the semiconductor device of Reference Example 2.

[0133] In Figure 9 the semiconductor device 91 of Reference Example 2 shown, the laminate 901 has a first conductor layer 931, an insulator layer 932, and a second conductor layer 933. The insulator layer 932 electrically insulates the first conductor layer 931 from the second conductor layer 933. The semiconductor element 102 is mounted on the first conductor layer 931. The cooler 104 is connected to the second conductor layer 933.

[0134] In the semiconductor device 91, when manufacturing the laminate 901, initial defects are formed in the insulator layer 932. If the power module 941 is installed in the device without detecting the formed initial defects, when the insulator layer 932 breaks starting from the initial defects due to voltage, heat, moisture, vibration, etc., the semiconductor element 102 will immediately be electrically short-circuited with the cooler 104, resulting in malfunctions such as a ground short-circuit of the semiconductor element 102.

[0135] In contrast, in Figure 7 In the illustrated semiconductor device 11, the laminate 101 has a first conductor layer 131, a first insulator layer 132, a second conductor layer 133, a second insulator layer 134, and a third conductor layer 135. The first insulator layer 132 electrically insulates the first conductor layer 131 from the second conductor layer 133. The second insulator layer 134 electrically insulates the third conductor layer 135 from the second conductor layer 133. The semiconductor element 102 is installed on the first conductor layer 131. The cooler 104 is connected to the third conductor layer 135.

[0136] In the semiconductor device 11, when manufacturing the laminate 101, initial defects are formed in the first insulator layer 132 or the second insulator layer 134. If the power module 141 is installed in the device without detecting the formed initial defects, when the first insulator layer 132 or the second insulator layer 134 breaks starting from the initial defects due to voltage, heat, moisture, vibration, etc., the semiconductor element 102 will not immediately be electrically short-circuited with the cooler 104, and malfunctions such as a ground short-circuit of the semiconductor element 102 will not occur immediately.

[0137] 3.4 Effects of the Invention of Embodiment 3

[0138] The invention of Embodiment 3 has the same effects as the invention of Embodiment 1.

[0139] In addition, according to the invention of Embodiment 3, the molding resin 107 is molded by the transfer molding method. Thus, the semiconductor device 11 can be easily manufactured.

[0140] 4 Embodiment 4

[0141] 4.1 Main Differences between Embodiment 3 and Embodiment 4

[0142] Figure 10 is a diagram schematically illustrating the semiconductor system of Embodiment 4. Figure 10 It includes a cross-sectional view schematically illustrating the cross-section of the semiconductor device included in the semiconductor system of Embodiment 4.

[0143] Figure 10 The illustrated semiconductor system 4 of Embodiment 4 and Figure 7The semiconductor system 3 of the illustrated Embodiment 3 mainly differs in the following points. Regarding points other than the following points, the same structure as that adopted in the semiconductor system 3 is also adopted in the semiconductor system 4.

[0144] In the semiconductor system 4, the second conductor layer 133 has a thickness thicker than that of the third conductor layer 135.

[0145] 4.2 Effects of the Invention of Embodiment 4

[0146] The invention of Embodiment 4 has the same effects as the invention of Embodiment 3.

[0147] In addition, according to the invention of Embodiment 4, it is possible to suppress the breakage of the second insulator layer 134 caused by heat, impact, etc. when the first insulator layer 132 is damaged.

[0148] The second conductor layer 133 of the first integrated component 161 is mostly a thin foil having a thickness of about 0.1 mm. The effect of being able to suppress the breakage of the second insulator layer 134 is particularly remarkable when the thickness of the second conductor layer 133 is thin as described above.

[0149] 5 Embodiment 5

[0150] Figure 11 It is a diagram schematically showing a moving body of Embodiment 5.

[0151] Figure 11 The illustrated moving body 5 of Embodiment 5 is an electric vehicle, a tram, an electric locomotive, an electric two-wheeler, an electric propulsion ship, an electric aircraft, an electric assist bicycle, an electric wheelchair, etc.

[0152] The moving body 5 includes a main body 51, a power supply circuit 13, a three-phase inverter circuit 52, a control circuit 53, a monitoring circuit 12, a warning display circuit 14, and an electric motor 54. The power supply circuit 13 includes a battery 501. The three-phase inverter circuit 52 includes six power modules 141. The six power modules 141, the monitoring circuit 12, the power supply circuit 13, and the warning display circuit 14 constitute the semiconductor system 2 of Embodiment 2. The six power modules 141, the monitoring circuit 12, and the power supply circuit 13 may also constitute the semiconductor system 1 of Embodiment 1, the semiconductor system 3 of Embodiment 3, or the semiconductor system 4 of Embodiment 4.

[0153] The power supply circuit 13 supplies direct current to the three-phase inverter circuit 52. The supplied direct current is the direct current discharged from the battery 501. The three-phase inverter circuit 52 converts the supplied direct current into three-phase alternating current and supplies the three-phase alternating current to the motor 54. When the three-phase inverter circuit 52 converts the direct current into three-phase alternating current, the six semiconductor elements 102 each included in the six power modules 141 turn on and off the supplied direct current. The motor 54 rotates according to the supplied three-phase alternating current. The rotation of the motor 54 is controlled by the frequency at which the six power modules 141 turn on and off the direct current.

[0154] One of the first main terminal 111 and the second main terminal 112 is electrically connected to the power supply circuit 13. The other of the first main terminal 111 and the second main terminal 112 is electrically connected to the motor 54. The first signal terminal 113 is electrically connected to the control circuit 53. The control circuit 53 outputs a signal input to the power module 141. In addition, the signal output from the power module 141 is input to the control circuit 53.

[0155] The monitoring circuit 12 may also monitor the voltage between the second conductor layer 133 and the body 51. In this case, the monitoring circuit 12 detects that the third conductor layer 135 is electrically short-circuited with the second conductor layer 133 based on the monitoring result.

[0156] According to the invention of Embodiment 5, the driver of the moving body 5 can identify, through a warning, an electrical short circuit between at least one of the first conductor layer 131 and the third conductor layer 135 and the second conductor layer 133. Thereby, when one of the first conductor layer 131 and the second conductor layer 133 is electrically short-circuited with the second conductor layer 133, but the other of the first conductor layer 131 and the second conductor layer 133 is not electrically short-circuited with the second conductor layer 133, and the semiconductor element 102 is not electrically short-circuited with the cooler 104, the moving body 5 can be taken to a dealership, a repair shop, etc., and the power module 141 can be replaced with a new power module.

[0157] In addition, according to the invention of Embodiment 5, before the power module 141 is replaced with a new power module 141, the flow of the main current is not stopped, and the output voltage of the power supply circuit 13 decreases. Thereby, it is possible to suppress the breakage of the other of the first insulator layer 132 and the second insulator layer 134 after one of the first insulator layer 132 and the second insulator layer 134 is broken. In addition, it is possible to suppress a sudden stop of the moving body 5 having the power module 141 installed therein after one of the first insulator layer 132 and the second insulator layer 134 is broken and a danger caused by the sudden stop of the moving body 5. For example, when the moving body 5 is an electric vehicle, it is possible to suppress the moving body 5 from suddenly stopping and breaking down while traveling on a highway.

[0158] The power module 141 can be installed in a device outside the three-phase inverter circuit 52. For example, the power module 141 can also be installed in a converter that converts regenerative power into direct current.

[0159] In addition, the present invention can freely combine the respective embodiments within the scope of the invention, and appropriately deform and omit the respective embodiments.

[0160] Although the present invention has been described in detail, the above invention is merely illustrative in all aspects, and the present invention is not limited thereto. It should be understood that countless variations that are not illustrated can be envisioned without departing from the scope of the present invention.

[0161] Explanation of reference numerals

[0162] 1, 2, 3, 4 semiconductor systems, 11 semiconductor devices, 12 monitoring circuits, 13 power supply circuits, 14 warning display circuits, 101 laminates, 102 semiconductor elements, 104 coolers, 111 first main terminals, 112 second main terminals, 113 first signal terminals, 114 second signal terminals, 115 first conductors, 116 second conductors, 117 third conductors, 118 fourth conductors, 122 first main electrodes, 123 second main electrodes, 124 signal electrodes, 131 first conductive layers, 132 first insulating layers, 133 second conductive layers, 134 second insulating layers, 135 third conductive layers, 151 laminates with semiconductor elements, 161 first integral components, 162 second integral components, 171 lead frames, 172 laminates with semiconductor elements, 5 moving bodies, 51 main bodies, 52 three-phase inverter circuits, 53 control circuits, 54 motors.

Claims

1. A semiconductor system, comprising: A semiconductor device having a stacked body, a semiconductor element, and a cooler, the stacked body having a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer stacked thereon, the first insulator layer being disposed between the first conductor layer and the second conductor layer to electrically insulate the first conductor layer from the second conductor layer, the second insulator layer being disposed between the second conductor layer and the third conductor layer to electrically insulate the third conductor layer from the second conductor layer, the semiconductor element being mounted on the first conductor layer, and the cooler being connected to the third conductor layer; A monitoring circuit electrically connected to the second conductor layer for detecting an electrical short circuit between at least one of the first conductor layer and the third conductor layer and the second conductor layer; And A power supply circuit that causes a main current to flow through the semiconductor device and restricts the flow of the main current when an electrical short circuit between at least one of the conductor layers and the second conductor layer is detected.

2. The semiconductor system according to claim 1, Wherein, The semiconductor element has a conduction path through which a main current flows, The second conductor layer is electrically insulated from the conduction path.

3. The semiconductor system according to claim 1 or 2, Wherein, It further has a signal terminal electrically connected to the second conductor layer.

4. The semiconductor system according to claim 3, Wherein, It further has a wire electrically connecting the second conductor layer and the signal terminal.

5. The semiconductor system according to claim 1 or 2, Wherein, The first insulator layer has a planar shape smaller than that of the second insulator layer.

6. The semiconductor system according to claim 1 or 2, Wherein, The second conductor layer has a thickness thicker than that of the third conductor layer.

7. The semiconductor system according to claim 1 or 2, Wherein, The first insulator layer and the second conductor layer form a first integral component, The second insulator layer and the third conductor layer form a second integral component, The second integral component has a first main surface on the side where the second insulator layer is disposed and a second main surface on the side where the third conductor layer is disposed, The semiconductor element has a main electrode and a signal electrode, The semiconductor element, the first conductor layer, and the first integral component are disposed on the first main surface, The semiconductor device further has a molding resin, a main terminal electrically connected to the main electrode, and a signal terminal electrically connected to the signal electrode. The molding resin covers a part of the main terminal, a part of the signal terminal, the semiconductor element, the first conductor layer, the first integral component, and the second integral component from the first main surface side, and does not cover the second main surface.

8. The semiconductor system according to claim 1 or 2, Wherein, Restricting the flow of the main current includes stopping the flow of the main current.

9. The semiconductor system according to claim 1 or 2, Wherein, Limiting the main current includes reducing the output voltage of the power supply circuit without stopping the flow of the main current.

10. The semiconductor system according to claim 1 or 2, wherein, it further has a warning device that gives a warning when it detects an electrical short circuit between the conductor layer of at least one of them and the second conductor layer.

11. A semiconductor system having: a semiconductor device having a laminate, a semiconductor element, and a cooler, the laminate having a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer laminated thereon, the first insulator layer being disposed between the first conductor layer and the second conductor layer to electrically insulate the first conductor layer from the second conductor layer, the second insulator layer being disposed between the second conductor layer and the third conductor layer to electrically insulate the third conductor layer from the second conductor layer, the semiconductor element being mounted on the first conductor layer, and the cooler being connected to the third conductor layer; a monitoring circuit electrically connected to the second conductor layer for detecting an electrical short circuit between the conductor layer of at least one of the first conductor layer and the third conductor layer and the second conductor layer; and a warning device that gives a warning when it detects an electrical short circuit between the conductor layer of at least one of them and the second conductor layer.

12. A moving body having the semiconductor system according to any one of claims 1 to 11.

13. The moving body according to claim 12, wherein, the conductor layer of at least one of them includes the third conductor layer, the moving body further has a main body, the monitoring circuit monitors the voltage between the second conductor layer and the main body and detects an electrical short circuit between the third conductor layer and the second conductor layer based on the result of the monitoring.

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