Perovskite light-emitting diode device, preparation method thereof and display device

Abstract

The present application discloses a perovskite light-emitting diode device, a preparation method thereof, and a display device. The perovskite light-emitting diode device comprises a first electrode layer, a second electrode layer, and a perovskite light-emitting layer disposed between the first electrode layer and the second electrode layer; a hole functional layer is disposed between the first electrode layer and the perovskite light-emitting layer; wherein the hole functional layer comprises a first electrode modification layer and a second electrode modification layer; and the second electrode modification layer is located between the first electrode layer and the first electrode modification layer. The perovskite light-emitting diode device of the present application can improve the injectability of the carbon electrode through a double-layer injection structure, thereby realizing efficient light emission of the perovskite light-emitting diode.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a perovskite light emitting diode device, a preparation method thereof, and a display device. Background Art

[0002] In recent years, through component optimization, interface modification, carrier transport layer optimization and structural design, the performance of light-emitting diodes (PeLEDs) based on perovskite materials has approached that of mature OLED and QLED devices. The use of inkjet printing (IJP) to prepare high-resolution perovskite optoelectronic devices is regarded as a powerful application of PeLEDs.

[0003] Carbon electrode materials, mainly graphene (GP) and carbon nanotubes (CNT), have attracted widespread attention due to their potential application prospects in flexible devices. However, as electrode materials for perovskite optoelectronic devices, carbon material electrodes have problems such as poor film morphology and poor interface properties with perovskite, which will lead to the risk of poor carrier injection and transport properties. At present, the main way to modify carbon electrodes is to use additives, but the introduction of additives will reduce the injection of carriers and reduce the performance of the device.

[0004] Therefore, there is an urgent need to provide a perovskite light-emitting diode device to improve the injection and transport properties of the carbon electrode to overcome the above-mentioned technical problems. Summary of the invention

[0005] The purpose of the present application is to provide a perovskite light emitting diode device to solve the above-mentioned deficiencies in the prior art.

[0006] An embodiment of the present application provides a perovskite light-emitting diode device, comprising a first electrode layer, a second electrode layer, and a perovskite light-emitting layer arranged between the first electrode layer and the second electrode layer; a hole functional layer is arranged between the first electrode layer and the perovskite light-emitting layer; wherein the hole functional layer comprises a first electrode modification layer and a second electrode modification layer; and the second electrode modification layer is located between the first electrode layer and the first electrode modification layer.

[0007] Optionally, in some embodiments of the present application, the material of the first electrode modification layer includes graphyne.

[0008] Optionally, in some embodiments of the present application, the material of the second electrode modification layer includes thiophene polymers and graphyne.

[0009] Optionally, in some embodiments of the present application, the chemical formula of the thiophene polymer includes formula (A) and formula (B):

[0010]

[0011] Among them, R 1 , R 2 , R 3 Each independently selected from C6H 11 , C5H9, or one of C4H7.

[0012] Optionally, in some embodiments of the present application, the graphyne is selected from one or more of α-graphyne and γ-graphyne.

[0013] Optionally, in some embodiments of the present application, the material of the perovskite light-emitting layer includes MAPbX3 and / or CsPbX3, wherein X represents a halogen atom.

[0014] Optionally, in some embodiments of the present application, the halogen atom is independently selected from one of chlorine, bromine and iodine.

[0015] Optionally, in some embodiments of the present application, the material of the first electrode layer includes one or more of graphene (GP) and carbon nanotubes (CNT).

[0016] Optionally, in some embodiments of the present application, the material of the second electrode layer is a transparent conductive oxide.

[0017] Optionally, in some embodiments of the present application, the transparent conductive oxide (TCO) is selected from one or more of ITO and IZO.

[0018] Optionally, in some embodiments of the present application, the thickness of the second electrode layer is 10 to 50 nm.

[0019] Optionally, in some embodiments of the present application, an electronic functional layer is provided between the perovskite light-emitting layer and the cathode layer, and the electronic functional layer includes an electron transport layer and / or an electron injection layer.

[0020] Optionally, in some embodiments of the present application, the material of the electron injection layer is selected from one or more of alkali metal oxides, alkaline earth metal oxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal fluorides, alkaline earth metal fluorides, alkaline earth metal hydroxides and alkali metal hydroxides.

[0021] Optionally, in some embodiments of the present application, the material of the electron injection layer is selected from one or more of ZnO, LiF, Liq, CaF2, MgF, NaF, KF, BaF2, CsF, CsOH, Cs2CO3 and ZnMgO.

[0022] Accordingly, the present invention also provides a method for preparing a perovskite light-emitting diode device, comprising the following steps:

[0023] Providing a substrate;

[0024] forming a second electrode layer on the base substrate;

[0025] forming a perovskite light-emitting layer on the second electrode layer;

[0026] forming a first electrode modification layer on the perovskite light-emitting layer;

[0027] forming a second electrode modification layer on the first electrode modification layer;

[0028] A first electrode layer is formed on the second electrode modification layer.

[0029] Optionally, in some embodiments of the present application, a first electrode modification layer is formed on the perovskite light-emitting layer using graphyne ink.

[0030] Optionally, in some embodiments of the present application, an ink containing a thiophene polymer and graphyne is used to form a second electrode modification layer on the first electrode modification layer. The preparation of the ink containing a thiophene polymer and graphyne comprises the following steps: after blending the thiophene polymer and graphyne powder, a solvent is added, and the solute is fully dispersed by ultrasound and stirring to obtain the ink.

[0031] Optionally, in some embodiments of the present application, the chemical formula of the thiophene polymer includes formula (A) and formula (B):

[0032]

[0033] Among them, R 1 , R 2 , R 3 Each independently selected from C6H 11 , C5H9, or one of C4H7.

[0034] Optionally, in some embodiments of the present application, the graphyne is selected from one or more of α-graphyne and γ-graphyne.

[0035] Optionally, in some embodiments of the present application, the material of the perovskite light-emitting layer includes MAPbX3 and / or CsPbX3, wherein X represents a halogen atom.

[0036] Optionally, in some embodiments of the present application, the material of the first electrode layer includes one or more of graphene and carbon nanotubes.

[0037] Optionally, in some embodiments of the present application, the material of the second electrode layer is a transparent conductive oxide. The transparent conductive oxide is selected from one or more of ITO and IZO. The thickness of the second electrode layer is 10 to 50 nm.

[0038] Optionally, in some embodiments of the present application, an electronic functional layer is provided between the perovskite light-emitting layer and the cathode layer. The electronic functional layer includes an electron transport layer and / or an electron injection layer.

[0039] Optionally, in some embodiments of the present application, the material of the electron injection layer is selected from one or more of alkali metal oxides, alkaline earth metal oxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal fluorides, alkaline earth metal fluorides, alkaline earth metal hydroxides and alkali metal hydroxides.

[0040] In addition, an embodiment of the present application also provides a display device, including the perovskite light emitting diode device as described above.

[0041] Beneficial effects of this application:

[0042] The perovskite light-emitting diode device of the present application improves the injectability of the carbon electrode through a double-layer injection structure, thereby achieving efficient light emission of the perovskite light-emitting diode. The present application can achieve gradient hole injection by controlling the ratio of thiophene and thiophene fused rings in the copolymer, and regulating the copolymer and graphyne doping ratio, thereby improving the hole injection efficiency of the device and achieving the optimal luminous efficiency of the device. At the same time, the modified layer can improve the injection and transport properties of the carbon electrode, thereby improving the efficiency and stability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0044] Figure 1 It is a schematic diagram of the structure of the perovskite light-emitting diode device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels, and no numerical requirements or order are imposed. Various embodiments of the present invention may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity, and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the numbered range, such as 1, 2, 3, 4, 5 and 6, which are applicable regardless of the range. Additionally, whenever a numerical range is indicated herein, it is meant to include any cited numeral (fractional or integral) within the indicated range.

[0046] In the process of research and practice of the prior art, the inventors of the present application found that thiophene organic compounds have excellent performance characteristics as CNT electrode modification layers. On the one hand, thiophene compounds can improve the stacking properties of carbon nanotubes, making carbon nanotubes have stronger π-π interactions; Graphene (GD) as a new type of two-dimensional semiconductor material has the characteristics of high conductivity. After blending with thiophene polymers, due to the π-π interaction between the two, the thiophene polymer-graphene (GD) has the characteristics of adjustable HOMO, which helps to improve the hole injection performance of the device. On the other hand, thiophene compounds can effectively block electrons from entering the carbon nanotube (CNT) electrode and reduce unnecessary carrier recombination. In addition, the inventors found that the hydrophobicity of the thiophene compound modification layer can block water vapor invasion and improve the stability of perovskite devices. By adjusting the thiophene conjugation length, the energy level of the molecule can also be regulated, and the performance of the material can be further regulated.

[0047] The embodiments of the present application provide a perovskite light-emitting diode device and a method for preparing the same, and a display device. The following are detailed descriptions of each. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.

[0048] The present application embodiment provides a perovskite light emitting diode device, see Figure 1The perovskite light-emitting diode device 100 includes a first electrode layer 110, a hole functional layer 120, a perovskite light-emitting layer 130, and a second electrode layer 150. Further, an electronic functional layer 140 may be disposed between the perovskite light-emitting layer 130 and the second electrode layer 150. Furthermore, the electronic functional layer 140 may be an electron transport layer and / or an electron injection layer.

[0049] Further, the hole functional layer 120 includes a first electrode modification layer 121 and a second electrode modification layer 122. Moreover, the second electrode modification layer 122 is located between the first electrode layer 110 and the first electrode modification layer 121. The hole functional layer 120 may include a hole injection layer, and the first electrode modification layer 121 and the second electrode modification layer 122 are used together as a hole injection layer structure.

[0050] In an embodiment of the present application, the material of the first electrode modification layer 121 includes graphyne. The material of the second electrode modification layer 122 includes thiophene polymer and graphyne (GD). The present application can effectively adjust the hole injection and transport capabilities of organic-graphyne by adjusting the blending ratio of polymer and graphyne. Furthermore, the graphyne is selected from one or more of α-graphyne and γ-graphyne.

[0051] Furthermore, the first electrode layer 110 is a carbon electrode, and the material of the carbon electrode includes one or more of graphene (GP) and carbon nanotube (CNT).

[0052] The perovskite light-emitting diode device in the embodiment of the present application adopts a double-layer electrode modification layer structure as a hole injection structure. By modifying the electrode structure of the carbon electrode, the injection property of the carbon electrode can be effectively improved, and the stability of the device can be improved.

[0053] In the device of the embodiment of the present application, on the base substrate, the first electrode layer 110, the hole functional layer 120, the perovskite light-emitting layer 130, the electron functional layer 140, and the second electrode layer 150 are stacked in sequence.

[0054] In one embodiment, a second electrode layer 150 is formed on a substrate, an electronic functional layer 140 is formed on a side of the second electrode layer 150 away from the substrate, a perovskite light-emitting layer 130 is formed on a side of the electronic functional layer 140 away from the second electrode layer 150, a hole functional layer 120 is formed on a side of the perovskite light-emitting layer 130 away from the electronic functional layer 140, and a first electrode layer 110 is formed on a side of the hole functional layer 120 away from the perovskite light-emitting layer 130. Further, since the hole functional layer 120 includes a first electrode modification layer 121 and a second electrode modification layer 122, during the preparation process, the first electrode modification layer 121 is first formed on a side of the perovskite light-emitting layer 130 away from the electronic functional layer 140, and then the second electrode modification layer 122 is formed on a side of the first electrode modification layer 121 away from the perovskite light-emitting layer 130.

[0055] In another embodiment, a first electrode layer 110 is formed on a substrate, a hole functional layer 120 is formed on a side of the first electrode layer 110 away from the substrate, a perovskite light-emitting layer 130 is formed on a side of the hole functional layer 120 away from the first electrode layer 110, an electron functional layer 140 is formed on a side of the perovskite light-emitting layer 130 away from the hole functional layer 120, and a second electrode layer 150 is formed on a side of the electron functional layer 140 away from the perovskite light-emitting layer 130. Similarly, since the hole functional layer 120 includes a first electrode modification layer 121 and a second electrode modification layer 122, during the preparation process, the second electrode modification layer 122 is first formed on a side of the first electrode layer 110 away from the substrate, and then the first electrode modification layer 121 is formed on a side of the second electrode modification layer 122 away from the first electrode layer 110.

[0056] In some embodiments of the present application, the chemical formula of the thiophene polymer includes formula (A) and formula (B):

[0057] Among them, * is the connection site.

[0058] Furthermore, R 1 , R 2 , R 3 Independently selected from but not limited to butyl (C4H7), pentyl (C5H9) and hexyl (C6H 11 ). It can be seen that the 3rd position of the thiophene polymer is an alkyl chain, such as R 1 , R 2 , R 3 . Alkyl chain (R 1 , R 2 , R 3) has the ability to regulate the molecular energy level, injectability and physical properties of the polymer.

[0059] In the present application, as the alkyl chain (R 1 , R 2 , R 3 ) increases, the HOMO of the thiophene polymer will gradually decrease. It can be seen that the present application can not only effectively improve the injection and transport properties of the carbon nanotube electrode and improve the device stability, but also realize adjustable electrode injection performance. In the embodiment of the present application, the energy level and optical properties of the second electrode modification layer can be changed by adjusting the ratio of thiophene and thiophene fused ring.

[0060] It can be seen that in the thiophene polymer, formula (A) is a thiophene ring structure, and formula (B) is a thiophene condensed ring structure, and the energy level and optical properties of the modified layer can be changed by adjusting the ratio of the thiophene ring to the thiophene condensed ring. In practical applications, the quantitative ratio of the thiophene ring structure to the thiophene condensed ring structure, such as the molar ratio, can be selected according to the required energy level and optical properties.

[0061] Furthermore, the ratio between the number of structures represented by formula (A) in the thiophene-based polymer and the number of structures represented by formula (B) in the thiophene-based polymer can be any ratio.

[0062] For example, the chemical formula of the thiophene polymer includes: Among them, R 1 , R 2 , R 3 Each independently selected from C6H 11 In the thiophene polymer, a represents the number of thiophene rings, and b represents the number of thiophene condensed rings. The present application can change the energy level and optical properties of the thiophene polymer and the modified layer by adjusting the ratio of thiophene rings and thiophene condensed rings.

[0063] For example, the chemical formula of the thiophene-based polymer may include the following structure:

[0064]

[0065] In some embodiments of the present application, the material of the perovskite light-emitting layer 130 includes MAPbX3 and / or CsPbX3, wherein X represents a halogen atom. Further, the halogen atom is independently selected from any one of chlorine (Cl), bromine (Br) and iodine (I).

[0066] In some embodiments of the present application, the material of the second electrode layer 150 is a transparent conductive oxide. Further, the transparent conductive oxide (TCO) is selected from one or more of indium tin oxide (ITO) and indium zinc oxide (IZO).

[0067] In some embodiments of the present application, the thickness of the second electrode layer 150 may be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm.

[0068] In some embodiments of the present application, an electronic functional layer is provided between the perovskite light-emitting layer 130 and the cathode layer, and the electronic functional layer includes an electron transport layer and / or an electron injection layer.

[0069] In some embodiments of the present application, the material of the electron injection layer (EIL) can be an inorganic material with a lower vacuum level or an organic material with a lower LUMO, or an organic doped material. Further, the material of the electron injection layer is selected from one or more of alkali metal oxides, alkaline earth metal oxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal fluorides, alkaline earth metal fluorides, alkaline earth metal hydroxides and alkali metal hydroxides. For example, the material of the electron injection layer is selected from one or more of ZnO, LiF, Liq, CaF2, MgF, NaF, KF, BaF2, CsF, CsOH, Cs2CO3 and ZnMgO.

[0070] In this application, the energy level and optical properties of the organic layer are changed by adjusting the ratio of thiophene and thiophene fused rings; the hole injection and transport capabilities of the thiophene polymer-graphene layer can be effectively adjusted by adjusting the blending ratio of thiophene polymer and graphyne. Through these two methods of regulation, the adjustable ink properties and balanced carrier injection of the device are achieved.

[0071] The embodiment of the present application also provides a method for preparing a perovskite light emitting diode device, which is used to prepare the above-mentioned perovskite light emitting diode device. The perovskite light emitting diode device can be an upright device or an inverted device.

[0072] In some embodiments of the present application, the method for preparing the perovskite light-emitting diode device comprises the following steps:

[0073] Providing a substrate;

[0074] forming a second electrode layer on the base substrate;

[0075] forming a perovskite light-emitting layer on the second electrode layer;

[0076] forming a first electrode modification layer on the perovskite light-emitting layer;

[0077] forming a second electrode modification layer on the first electrode modification layer;

[0078] A first electrode layer is formed on the second electrode modification layer.

[0079] Please continue reading Figure 1 The method for preparing the perovskite light-emitting diode device comprises the following steps:

[0080] Providing a substrate;

[0081] forming a second electrode layer 150 on the base substrate;

[0082] forming an electronic functional layer 140 on the second electrode layer 150;

[0083] forming a perovskite light-emitting layer 130 on the electronic functional layer 140;

[0084] forming a first electrode modification layer 121 on the perovskite light-emitting layer 130;

[0085] forming a second electrode modification layer 122 on the first electrode modification layer 121;

[0086] The first electrode layer 110 is formed on the second electrode modification layer 122 .

[0087] Furthermore, a first electrode modification layer 121 is formed on the perovskite light-emitting layer 130 using graphyne ink. A second electrode modification layer 122 is formed on the first electrode modification layer 121 using ink containing thiophene polymer and graphyne.

[0088] Furthermore, the electronic functional layer 140 includes an electron transport layer and / or an electron injection layer.

[0089] Furthermore, the first electrode layer, the electron injection layer, the perovskite light-emitting layer, the first electrode modification layer, the second electrode modification layer, the second electrode layer, etc. in the perovskite light-emitting diode device can all be manufactured by inkjet printing.

[0090] In one embodiment, the method for preparing the perovskite light-emitting diode device comprises the following steps:

[0091] Providing a base substrate, and forming a layer of transparent electrode on the base substrate, namely forming a cathode layer;

[0092] printing an electron injection layer (EIL) on the cathode layer by inkjet printing;

[0093] Printing a perovskite active layer, i.e., a perovskite light-emitting layer, on the electron injection layer by inkjet printing;

[0094] Using graphyne ink to print an organic-graphyne electrode modification layer, i.e., a first electrode modification layer, on the perovskite light-emitting layer by inkjet printing;

[0095] A second electrode modification layer is inkjet printed on the first electrode modification layer using ink containing thiophene polymer and graphyne; wherein the preparation of the ink containing thiophene polymer and graphyne comprises the following steps: after the thiophene polymer and graphyne powder are blended, a solvent such as dichlorobenzene is added, and the solute is fully dispersed by ultrasound and stirring to obtain a printing ink;

[0096] A layer of CNT electrode is printed on the second electrode modification layer by inkjet printing, thereby forming an anode layer.

[0097] In some embodiments of the present application, the preparation step of the second electrode modification layer includes: mixing thiophene polymer, graphyne and solvent, stirring, and preparing printing ink; then using the printing ink for inkjet printing, vacuum drying to form a film, annealing (heating), and preparing the second electrode modification layer. Further, stirring can be carried out by ultrasound and stirring to fully disperse the solute to prepare the printing ink. The solvent can be dichlorobenzene.

[0098] For example, the perovskite light-emitting diode device is a bottom-emitting inkjet-printed perovskite light-emitting diode device structure, and the device may include, from bottom to top, a transparent electrode substrate (TCO substrate), an electron injection layer (EIL), a perovskite light-emitting layer, a hole functional layer, and a carbon electrode, and the light emitting direction of the device is bottom-emitting light. Among them, the transparent electrode (TCO) is made by sputtering / coating photoresist / exposure / development / Stripper process; the hole injection layer (HIL), the perovskite light-emitting layer, and the electron injection layer (EIL) are made by inkjet printing; the carbon electrode is made by solution processing processes such as printing and / or spin coating; for the hole functional layer, a layer of graphyne ink is first prepared and printed on the perovskite layer, and then a thiophene polymer-graphyne ink is printed on the graphyne layer.

[0099] In the embodiments of the present application, the chemical formula of the thiophene polymer includes formula (A) and formula (B):

[0100] Among them, R 1 , R 2 , R 3 Each independently selected from C6H 11 , C5H9, C4H7. The structure of the thiophene polymer is shown in detail above.

[0101] The graphyne is selected from one or more of α-graphyne and γ-graphyne. The material of the perovskite light-emitting layer includes MAPbX3 and / or CsPbX3, wherein X represents a halogen atom.

[0102] The material of the first electrode layer includes one or more of graphene and carbon nanotubes. The material of the second electrode layer is a transparent conductive oxide. The transparent conductive oxide is selected from one or more of ITO and IZO. The thickness of the second electrode layer is 10 to 50 nm.

[0103] The material of the electron injection layer is selected from one or more of alkali metal oxides, alkaline earth metal oxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal fluorides, alkaline earth metal fluorides, alkaline earth metal hydroxides and alkali metal hydroxides.

[0104] An embodiment of the present application also provides a display device, comprising the perovskite light emitting diode device as described above.

[0105] In summary, the perovskite light-emitting diode device of the present application uses a double-layer electrode modification layer, which can make the carbon electrode have better injection ability, thereby achieving efficient light emission of the perovskite light-emitting diode and improving the stability of the device. The present application can be applied to related products such as perovskite displays.

[0106] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0107] The above is a detailed introduction to a perovskite light-emitting diode device, a preparation method thereof, and a display device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A perovskite light-emitting diode device, characterized in that: The invention comprises a first electrode layer, a second electrode layer, and a perovskite light-emitting layer arranged between the first electrode layer and the second electrode layer; a hole functional layer is arranged between the first electrode layer and the perovskite light-emitting layer; wherein the hole functional layer comprises a first electrode modification layer and a second electrode modification layer; the second electrode modification layer is located between the first electrode layer and the first electrode modification layer; the first electrode modification layer and the second electrode modification layer form a double-layer electrode modification layer for improving the injection capacity of the electrode; The material of the first electrode modification layer includes graphyne; the material of the second electrode modification layer includes thiophene polymer and graphyne; The chemical formula of the thiophene polymer includes formula (A) and formula (B): Among them, R 1 , R 2 , R 3 Each independently selected from C6H 11 , C5H9, or one of C4H7.

2. The perovskite light-emitting diode device according to claim 1, characterized in that: The graphyne is selected from one or more of α-graphyne and γ-graphyne; The material of the perovskite light-emitting layer includes MAPbX3 and / or CsPbX3, wherein X represents a halogen atom.

3. The perovskite light-emitting diode device according to claim 1, characterized in that: The material of the first electrode layer includes one or more of graphene and carbon nanotubes; and / or The material of the second electrode layer is a transparent conductive oxide; and / or The thickness of the second electrode layer is 10-50 nm; and / or An electronic functional layer is disposed between the perovskite light-emitting layer and the second electrode layer, and the electronic functional layer includes an electron transport layer and / or an electron injection layer.

4. The perovskite light-emitting diode device according to claim 3, characterized in that: The transparent conductive oxide is selected from one or more of ITO and IZO; The material of the electron injection layer is selected from one or more of alkali metal oxides, alkaline earth metal oxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal fluorides, alkaline earth metal fluorides, alkaline earth metal hydroxides and alkali metal hydroxides.

5. A method for preparing a perovskite light-emitting diode device, characterized in that: The steps include: Providing a substrate; forming a second electrode layer on the base substrate; forming a perovskite light-emitting layer on the second electrode layer; forming a first electrode modification layer prepared by graphyne ink on the perovskite light-emitting layer; forming a second electrode modification layer on the first electrode modification layer, which is prepared by using ink containing thiophene polymer and graphyne; forming a first electrode layer on the second electrode modification layer; The first electrode modification layer and the second electrode modification layer form a double-layer electrode modification layer for improving the injection capacity of the electrode; the chemical formula of the thiophene polymer includes formula (A) and formula (B): Among them, R 1 , R 2 , R 3 Each independently selected from C6H 11 , C5H9, or one of C4H7.

6. A display device comprising the perovskite light-emitting diode device according to any one of claims 1 to 4.

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