Breathable conductive material, method of manufacture, semiconductor device, and dual gate TFT device
By doping conductive oxides with transition metals to alter their microstructure, the incompatibility between breathable conductive materials and semiconductor device processes is resolved, achieving a balance between conductivity and breathability.
CN114899228BActive Publication Date: 2026-06-02PEKING UNIV SHENZHEN GRADUATE SCHOOL
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- PEKING UNIV SHENZHEN GRADUATE SCHOOL
- Filing Date
- 2022-06-01
- Publication Date
- 2026-06-02
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Figure CN114899228B_ABST
Abstract
The application discloses a kind of breathable conductive material, manufacturing method, semiconductor device and double-gate TFT device, breathable conductive material includes host material and doping material;Host material includes at least one metal oxide, metal oxide is conductive oxide, and the grain size of metal oxide is 1nm-100nm;Doping material includes at least one element or oxide in transition metal and post-transition metal, and the content of doping material is 1%-50% by mass percentage.Doping is carried out in conductive oxide by specific element, so as to change the microstructure of conductive oxide, improve the air permeability of conductive oxide while ensuring its conductivity, so that the electrode made of the breathable conductive material can be applied in semiconductor devices requiring conductivity and air permeability.
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