Method for manufacturing light emitting device and light emitting device

Abstract

One embodiment of the present invention relates to a method for manufacturing a light-emitting device, comprising the step of placing a light-emitting element (30) having a p-side electrode (31) and an n-side electrode (32) on the same side on a substrate (10). In particular, in one embodiment of the present invention, the method sequentially comprises: a step of forming a wiring seed layer (11) on the positive electrode side and a wiring seed layer (12) on the negative electrode side on the substrate (10); a step of forming at least a portion of an anti-etching pattern (20) in a region on the substrate (10) where the light-emitting element (30) is placed; a step of separating and opposing the wiring seed layer (11) on the positive electrode side with the p-side electrode (31) and the wiring seed layer (11) on the negative electrode side with the n-side electrode (32) and the wiring seed layer (12) on the negative electrode side. The invention further comprises the steps of placing the light-emitting element (30) on the anti-etching pattern (20) in an opposing manner; using the anti-etching pattern (20) as a mask, performing electroplating bonding between the wiring seed layer (11) on the positive electrode side and the p-side electrode (31) separated from the wiring seed layer (11) on the positive electrode side, and between the wiring seed layer (12) on the negative electrode side and the n-side electrode (32) separated from the wiring seed layer (12) on the negative electrode side; and removing the anti-etching pattern (20).

Description

Technical Field

[0001] One embodiment of the present invention relates to a method for manufacturing a light-emitting device and the light-emitting device. Background Art

[0002] In the past, a method for mounting an electronic component such as a light-emitting element on a wiring substrate is known. For example, first, an uncured or semi-cured adhesive is applied to the surface of the wiring substrate, and the main surface of the wiring substrate opposite to the side where the light-emitting element is arranged is irradiated with light, and the prescribed portion coated with the adhesive is hardened through the wiring substrate to adhere and support the light-emitting element. Thereafter, the uncured or semi-cured adhesive present in a portion other than the prescribed portion of the adhesive is removed, and in the removed portion, the electrode provided on the light-emitting element and the wiring of the wiring substrate are connected by electroplating. As described above, an electronic component such as a light-emitting element can be mounted on a wiring substrate (see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: (Japanese) Patent Publication No. 2017-183458 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] In recent years, there has been a growing demand for high thermal conductivity of substrates and high integration of drive circuits, especially wiring, and non-transparent substrates such as Si substrates are expected to meet these requirements. However, when a non-transparent substrate is used, irradiation light cannot pass through it as in the conventional technology, and as a result, the light-emitting element cannot be correctly mounted on the wiring substrate.

[0008] An object of one embodiment of the present invention is to provide a method for manufacturing a light emitting device capable of accurately mounting a light emitting element on a wiring substrate regardless of whether the wiring substrate is a transparent substrate or a non-transparent substrate, and a light emitting device obtained by the manufacturing method.

[0009] Technical solutions for solving technical problems

[0010] In order to achieve the above object, in one embodiment of the present invention,

[0011] Provided is a method for manufacturing a light-emitting device, the method comprising providing a light-emitting element having a p-side electrode and an n-side electrode on the same side on a substrate,

[0012] The steps sequentially include:

[0013] forming a wiring seed layer on the positive electrode side and a wiring seed layer on the negative electrode side on the substrate;

[0014] A step of forming at least a portion of a resist pattern in a region on the substrate where the light emitting element is placed;

[0015] A step of placing the light emitting element on the resist pattern in such a manner that the p-side electrode and the wiring seed layer on the anode side are spaced apart and opposed to each other, and the n-side electrode and the wiring seed layer on the cathode side are spaced apart and opposed to each other;

[0016] A step of electroplating and bonding the wiring seed layer on the positive electrode side and the p-side electrode separated from the wiring seed layer on the positive electrode side, and the wiring seed layer on the negative electrode side and the n-side electrode separated from the wiring seed layer on the negative electrode side, using the resist pattern as a mask;

[0017] A step of removing the resist pattern.

[0018] In order to achieve the above object, in one embodiment of the present invention, a light emitting device is provided, the light emitting device comprising:

[0019] A wiring substrate including a substrate and a positive electrode side wiring and a negative electrode side wiring arranged on the substrate;

[0020] a light emitting element, which is located on the wiring substrate and has a p-side electrode and an n-side electrode;

[0021] A first conductive member connecting the positive electrode side wiring and the p-side electrode;

[0022] a second conductive member connecting the cathode-side wiring and the n-side electrode;

[0023] In the cross-sectional view, an outer side surface of at least one of the first conductive member and the second conductive member protrudes outward from a straight line connecting an outer end portion of the wiring and an outer end portion of the electrode.

[0024] Effects of the Invention

[0025] According to one embodiment of the present invention, a light emitting element can be accurately mounted on a wiring substrate regardless of whether the wiring substrate is a transparent substrate or a non-transparent substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1A It is a perspective view schematically showing a formation scheme of a wiring seed layer on a substrate.

[0027] Figure 1B It is a perspective view schematically showing a method of forming a resist pattern.

[0028] Figure 1C It is a perspective view schematically showing a placement scheme of a light emitting element.

[0029] Figure 1D It is a perspective view schematically showing a scheme of electroplating bonding between a wiring seed layer and an electrode of a light-emitting element.

[0030] Figure 1E It is a perspective view schematically showing a method of removing a resist pattern.

[0031] Figure 2A It is a plan view schematically showing a formation scheme of a wiring seed layer on a substrate.

[0032] Figure 2B is a schematic representation of Figure 2A A cross-sectional view showing a formation scheme of a wiring seed layer on a substrate between II and I'.

[0033] Figure 2C It is a top view schematically showing a formation scheme of a resist pattern.

[0034] Figure 2D It is schematically indicated Figure 2C A cross-sectional view of a resist pattern formation scheme between II-II'.

[0035] Figure 2E It is a perspective view schematically showing a light emitting element mounting carrier substrate on which a light emitting element is mounted.

[0036] Figure 2F It is a plan view schematically showing a mode of placing a light emitting element mounting carrier substrate on a first resist pattern.

[0037] Figure 2G It is schematically indicated Figure 2F A cross-sectional view of a mounting scheme of a light emitting element mounting carrier substrate on a first resist pattern between III and III'.

[0038] Figure 2H It is a top view schematically showing a method of peeling the carrier substrate from the light-emitting element.

[0039] Fig.2I It is a cross-sectional view schematically showing a method of peeling the carrier substrate from the light-emitting element.

[0040] Figure 2J It is a cross-sectional view schematically showing a scheme of electroplating bonding between a wiring seed layer and an electrode of a light-emitting element.

[0041] Figure 2K It is a cross-sectional view schematically showing a method of removing the resist pattern.

[0042] Figure 2L It is a plan view schematically showing a cutting pattern of a local portion of the wiring seed layer corresponding to the removed portion of the second resist pattern.

[0043] Figure 2M It is a cross-sectional view schematically showing a cut-away view of a local portion of the wiring seed layer corresponding to a portion where the second resist pattern is to be removed.

[0044] Figure 2N It is a cross-sectional view schematically showing a scheme in which a chemical plating process is performed.

[0045] Figure 3 It is a cross-sectional view schematically showing the structure of a light emitting device according to one embodiment of the present invention.

[0046] Figure 4 It is a cross-sectional view schematically showing the structure of a light emitting device according to another embodiment of the present invention. DETAILED DESCRIPTION

[0047] [Method for manufacturing light emitting device]

[0048] Hereinafter, a method for manufacturing a light-emitting device according to an embodiment of the present invention will be described in detail based on the accompanying drawings. It should be noted that in the following description, terms indicating specific directions and positions are used as required. However, the use of these terms is to facilitate the understanding of the invention with reference to the accompanying drawings, and the technical scope of the present invention is not limited to the meaning of these terms. In addition, parts with the same reference numerals in multiple drawings represent the same or equivalent parts.

[0049] In addition, the embodiments shown below are examples of manufacturing methods of light-emitting devices for embodying the technical concept of the present invention, and do not limit the present invention. Furthermore, the sizes, materials, shapes, and relative arrangements of the components described below are not intended to limit the scope of the present invention unless otherwise specified, but are shown as examples. Furthermore, the sizes and positional relationships of the components shown in the drawings may be exaggerated for the purpose of clarifying the description.

[0050] Implementation Method 1

[0051] Hereinafter, a method for manufacturing a light emitting device according to Embodiment 1 of the present invention will be described with reference to the drawings.

[0052] In Embodiment 1, as an example, a single light-emitting element including a p-side electrode and an n-side electrode on the same surface is mounted on a wiring substrate to manufacture a light-emitting device.

[0053] In this embodiment, the production method according to Embodiment 1 of the present invention includes the following steps (a) to (e).

[0054] (a) Step of forming a wiring seed layer on a substrate

[0055] Figure 1A It is a perspective view schematically showing a method of forming a wiring seed layer on a substrate.

[0056] like Figure 1A As shown, the wiring seed layer 11 on the positive electrode side and the wiring seed layer 12 on the negative electrode side are formed at a predetermined interval on the substrate 10. The substrate 10 on which the wiring seed layer 11 on the positive electrode side and the wiring seed layer 12 on the negative electrode side are formed at a predetermined interval may be prepared.

[0057] The predetermined interval between the wiring seed layers 11 and 12 is preferably an interval configured so that the p-side electrode of the light-emitting element 30 to be mounted later can face the wiring seed layer 11 on the positive electrode side, and the n-side electrode can face the wiring seed layer 12 on the negative electrode side. For example, when the size of the light-emitting element in plan view is 50 μm×50 μm, the interval between the wiring seed layers 11 and 12 can be 14 μm.

[0058] The substrate 10 is not limited to a transparent substrate, and a non-transparent substrate may also be used. Materials for the transparent substrate include glass, quartz, sapphire, ceramics (e.g., transparent alumina), and organic thin films (e.g., PET). Materials for the non-transparent substrate include semiconductors (e.g., Si, Ge, GaAs, and InP), ceramics (e.g., alumina and AlN), metals (e.g., Al and Cu), and organic materials (e.g., FR4).

[0059] (b) Resist pattern formation step

[0060] Figure 1B It is a perspective view schematically showing a method of forming a resist pattern.

[0061] At least a portion of the resist pattern 20 is formed in the region on the substrate 10 where the light emitting element 30 is placed. It should be noted that the "resist pattern" in this specification refers to a patterned resist layer that exposes a portion of the substrate in the region on the substrate 10 where the light emitting element 30 is placed to ensure that a plating layer can be grown later, and can also be called a "patterned resist layer" or "resist layer patterning".

[0062] like Figure 1B As shown, the resist pattern 20 may be formed in the region on the substrate 10 where the light emitting element 30 is placed, and a portion of the resist pattern 20 may extend outward from the region where the light emitting element 30 is placed.

[0063] Hereinafter, a case where the entire resist pattern 20 is arranged in a region where the light emitting element 30 is placed is taken as an example.

[0064] Specifically, when the light emitting element 30 is arranged later, the resist pattern 20 having a plane size smaller than the plane size of the light emitting element 30 is formed in the region where the light emitting element 30 is placed so that the electrodes (p-side electrode / n-side electrode) of the light emitting element 30 and the wiring seed layers 11 and 12 can be separated and opposed. That is, in the top view, in the region where the resist pattern 20 is not arranged, the resist pattern 20 is arranged so that the electrodes (p-side electrode / n-side electrode) of the light emitting element 30 and the wiring seed layers 11 and 12 overlap. As a result, it is possible to appropriately ensure a space (specifically, a narrow space for subsequent electroplating growth) between the electrodes of the light emitting element 30 and the wiring seed layers 11 and 12. The plane size of the resist pattern 20 can be not less than 20% and not more than 40% of the plane size of the light emitting element 30.

[0065] The resist pattern 20 may be formed in a region where the light emitting element 30 is to be mounted later, that is, at least between the wiring seed layer 11 on the anode side and the wiring seed layer 12 on the cathode side in a plan view.

[0066] Photolithography or screen printing can be used as a method for forming the resist pattern 20. When photolithography is used, a fine resist pattern can be formed.

[0067] It is preferable that the resist of the resist pattern 20 has adhesiveness. When the resist has adhesiveness, the light emitting element 30 to be mounted later can be bonded and supported on the resist pattern 20 .

[0068] As the anti-etching pattern 20, it is preferred that the above-mentioned type has adhesiveness and chemical resistance to the electroplating solution used later. For example, as the anti-etching pattern 20, phenol resin, epoxy resin, silicone resin, acrylic resin can be used. If the anti-etching pattern 20 is used as a mask for the adhesive support of the light-emitting element and the electroplating bonding, the number of processes can be reduced because there is no need to set components that are compatible with their respective purposes. In addition, since there is no restriction caused by the combination of formation conditions generated when different components are used (for example, the solvent dissolved in one side, the suitable processing temperature is different, etc.), the process can be easily implemented.

[0069] The cross-sectional shape of the resist pattern 20 may be rectangular or square. That is, the contact surface (upper surface) and the side surface of the resist pattern 20 in contact with the light emitting element 30 may be in a substantially perpendicular relationship. Thus, the contact area between the light emitting element 30 and the resist pattern 20 and the plating growth area for connecting the wiring seed layer and the electrode of the light emitting element can be correctly ensured.

[0070] The cross-sectional shape of the resist pattern may be tapered. It may be a shape that widens from the substrate 10 toward the light emitting element 30, or it may be a shape that narrows from the substrate 10 toward the light emitting element 30. If the width increases from the substrate 10 toward the light emitting element 30, the area where the light emitting element 30 and the resist pattern 20 are bonded can be increased, and the light emitting element and the resist pattern can be more reliably bonded.

[0071] In the cross-sectional view, the height of the resist pattern 20 is preferably higher than the heights of the wiring seed layer 11 on the positive electrode side and the wiring seed layer 12 on the negative electrode side. Thus, due to the difference in height, when the light emitting element 30 is subsequently placed on the resist pattern 20, the wiring seed layer provided on the substrate 10 and the electrodes of the light emitting element 30 placed on the resist pattern 20 can be separated from each other by sandwiching the resist pattern 20.

[0072] This separation can ensure a space between the wiring seed layer and the electrode of the light emitting element 30 for connection by electroplating in the subsequent electroplating process. As the electroplating process, electrolytic plating or chemical plating can be used.

[0073] It should be noted that the "height of the resist pattern 20" here refers to the thickness of the resist pattern 20. The height of the resist layer can be greater than 1 μm and less than 3 μm. Preferably, the height of the resist pattern 20 is smaller than the distance between the wiring seed layers 11 and 12. If the height of the resist pattern 20 is greater than the distance between the wiring seed layers 11 and 12, there is a possibility that the wiring seed layer 11 and the wiring seed layer 12 are connected by electroplating before the wiring seed layer and the electrode of the light-emitting element are connected by electroplating during the electroplating process. However, if the height of the resist pattern 20 is less than the distance between the wiring seed layers 11 and 12, the situation where the wiring seed layer 11 and the wiring seed layer 12 are connected by electroplating can be suppressed.

[0074] (c) Light-emitting element placement step

[0075] Figure 1C It is a perspective view schematically showing a placement scheme of a light emitting element.

[0076] like Figure 1C As shown, the light emitting element 30 is placed on the resist pattern 20 .

[0077] In either of the steps (a) and (b), it is possible to pre-adjust the electrodes of the light-emitting element 30 to be placed later and the wiring seed layers 11 and 12 to be placed opposite to each other. Thus, in the step (c), when the light-emitting element 30 is placed on the resist pattern 20, the p-side electrode 31 of the light-emitting element 30 and the wiring seed layer 11 on the positive electrode side are separated and placed opposite to each other, and the n-side electrode 32 of the light-emitting element 30 and the wiring seed layer 12 on the negative electrode side can be separated and placed opposite to each other. Thus, a narrow space for growing the electroplated P can be appropriately ensured between the electrodes 31 and 32 of the light-emitting element 30 and the wiring seed layers 11 and 12.

[0078] In addition, the light emitting element 30 can be reliably placed on the resist pattern 20. It should be noted that "the electrode of the light emitting element 30 and the wiring seed layer are opposed" in this specification means that a part of the electrode of the light emitting element 30 and a part of the wiring seed layer face each other in a cross-sectional view.

[0079] When the light emitting element 30 is placed on the resist pattern 20, if the material of the resist pattern 20 is thermoplastic, it can be placed while being thermocompressed. Thus, the light emitting element 30 can be attached to the resist pattern 20, and the adhesion between the light emitting element 30 and the resist pattern 20 can be ensured. The cross-sectional shape of the resist pattern can be barrel-shaped (a shape that bulges outward) by pressurizing the resist pattern by thermocompression bonding or the like.

[0080] (d) Electroplating bonding step between the wiring seed layer and the electrode of the light emitting element

[0081] Figure 1D It is a perspective view schematically showing a scheme of electroplating bonding between a wiring seed layer and an electrode of a light-emitting element.

[0082] like Figure 1D As shown, the wiring seed layer 11 on the positive electrode side and the p-side electrode 31 spaced apart from the wiring seed layer 11 on the positive electrode side, and the wiring seed layer 12 on the negative electrode side and the n-side electrode 32 spaced apart from the wiring seed layer 12 on the negative electrode side are electroplated and bonded. As a result, the wiring seed layer 11 on the positive electrode side and the p-side electrode 31 are electrically connected, and the wiring seed layer 12 on the negative electrode side and the n-side electrode 32 are electrically connected.

[0083] In the step (d), while the narrow space is appropriately secured, electroplating is performed using the resist pattern 20 as a mask.

[0084] As the electroplating treatment, electrolytic plating or chemical plating can be used. As the plating solution, copper (Cu) can be used. If a copper plating solution is used, the electrode of the light-emitting element and the wiring seed layer are connected by copper, and the electrode of the light-emitting element and the wiring seed layer can be electroplated. It should be noted that, in addition to copper, the plating solution can use gold (Au), zinc (Zn), chromium (Cr) and / or nickel (Ni).

[0085] (e) Resist pattern removal step

[0086] Figure 1E It is a perspective view schematically showing a method of removing a resist pattern.

[0087] like Figure 1E As shown, the resist pattern 20 is removed.

[0088] The removal of the resist pattern 20 may be performed by immersing the resist layer in a stripping solution that can be stripped, or by other methods. For example, in a chamber, after the wiring seed layers 11 and 12 and the electrodes 31 and 32 are bonded by electroplating, an arbitrary resist stripping solution is sprayed on the resist pattern 20 using a nozzle. The resist pattern 20 is dissolved by the resist stripping solution, and the dissolved resist pattern 20 is discharged to the outside of the substrate 10 using a predetermined gas or the like.

[0089] The resist layer stripping solution may be a mixed solution containing sulfuric acid and an organic solvent. As the organic solvent, for example, at least one solvent selected from the group consisting of an alcohol solvent such as 2-propanol, a ketone solvent such as acetone, an ester solvent such as ethyl acetate, and an ether solvent can be used. As the gas used to discharge the dissolved resist pattern 20, for example, argon gas, nitrogen gas, etc. can be cited.

[0090] As described above, the light emitting element 30 can be mounted on the substrate 10 , thereby manufacturing the light emitting device 70 of the first embodiment.

[0091] Based on the above-mentioned steps (a) to (e), the manufacturing method of the light-emitting device of embodiment 1 does not require the step of irradiating light from the main surface side of the substrate opposite to the side on which the light-emitting element is arranged in order to harden the adhesive used to bond the light-emitting element to the substrate in the previous manufacturing method. Therefore, regardless of whether the substrate 10 is a transparent substrate or a non-transparent substrate, the light-emitting element can be correctly mounted on the substrate 10.

[0092] Implementation Method 2

[0093] Hereinafter, a method for manufacturing a light emitting device according to Embodiment 2 of the present invention will be described with reference to the drawings.

[0094] As described above, Embodiment 1 is a method of manufacturing a light-emitting device by mounting a single light-emitting element on a single wiring substrate. In contrast, Embodiment 2 is an application example of Embodiment 1, and is a method of manufacturing a light-emitting device by mounting at least two light-emitting elements on a single wiring substrate. Since Embodiment 2 is an application example of Embodiment 1, the description of the parts that overlap with those in Embodiment 1 is omitted.

[0095] The method for manufacturing a light emitting device according to the second embodiment of the present invention is a method in which a light emitting element having at least two p-side electrodes and an n-side electrode on the same surface is provided on a substrate. In this method, the method for manufacturing a light emitting device according to the second embodiment of the present invention includes the following steps.

[0096] (A) Step of forming a wiring seed layer on a substrate

[0097] Figure 2A It is a plan view schematically showing a formation scheme of a wiring seed layer on a substrate. Figure 2B It is schematically indicated Figure 2A A cross-sectional view showing a formation scheme of a wiring seed layer on a substrate between II and I'.

[0098] like Figure 2A and Figure 2B As shown, the positive electrode side wiring seed layer 110 and the negative electrode side wiring seed layer 120 are formed at a predetermined interval on the substrate 100. The substrate 100 may be prepared with the positive electrode side wiring seed layer 110 and the negative electrode side wiring seed layer 120 formed at a predetermined interval.

[0099] Specifically, from the viewpoint of arranging at least two light-emitting elements with a predetermined interval above each wiring seed layer 110, 120, the wiring seed layer 110 on the positive electrode side and the wiring seed layer 120 on the negative electrode side are formed on the substrate 100 in such a manner that they extend in substantially the same direction. Here, "the wiring seed layer 110 on the positive electrode side and the wiring seed layer 120 on the negative electrode side extend in substantially the same direction" refers to the case where the two extend in exactly the same direction (parallel direction), and also includes the case where the angle formed between the two is within ±1 degree.

[0100] like Figure 2A As shown, in the top view, the wiring seed layer 110 on the positive electrode side and the wiring seed layer 120 on the negative electrode side may include a recessed portion 111. The recessed portion 111 of the wiring seed layer 110 provided on the positive electrode side is provided on the side of the wiring seed layer 110 on the positive electrode side that is opposite to the wiring seed layer 120 on the negative electrode side. The recessed portion 111 of the wiring seed layer 120 provided on the negative electrode side is provided on the side of the wiring seed layer 120 on the negative electrode side that is opposite to the wiring seed layer 110 on the positive electrode side.

[0101] The concave portion 111 can be provided in a region where the light emitting element is placed. In a plan view, the concave portion 111 can be formed in such a manner that the first resist pattern 210 enters the concave portion 111 of the wiring seed layer 120. That is, the concave portion 111 can be formed at a position covered by the first resist pattern 210. Figure 2A The shape of the middle recess 111 is semicircular, but may be other shapes (rectangular, etc.). The recess 111 may be formed only in either the interconnect seed layer 110 on the positive electrode side or the interconnect seed layer 120 on the negative electrode side.

[0102] Since the recessed portion 111 is formed at a position covered by the first resist pattern 210 , the contact area of ​​the first resist pattern 210 with the wiring seed layer is reduced and the contact area with the substrate 100 is increased, so that the adhesion between the resist pattern and the substrate 100 can be improved.

[0103] (B) Resist pattern formation step

[0104] Figure 2C It is a top view schematically showing a formation scheme of a resist pattern. Figure 2D It is schematically indicated Figure 2C A cross-sectional view of a resist pattern formation scheme between II-II'.

[0105] like Figure 2C and Figure 2D As shown in FIG. 1 , first resist patterns 210 are formed on substrate 100 in regions where at least two light emitting elements 300 are placed at predetermined intervals. First resist patterns 210 correspond to resist patterns 20 of the first embodiment.

[0106] Specifically, when at least two light-emitting elements 300 are placed at a predetermined interval, a first anti-etching pattern 210 having a planar size smaller than the planar size of the light-emitting element 300 is formed in the area where each light-emitting element 300 is placed, in such a way that the electrode of each light-emitting element 300 can be separated and opposed to the wiring seed layer 110 and 120, respectively.

[0107] By forming the first resist patterns 210 , it is possible to ensure a space (specifically, a narrow space for growing a plating layer later) between the electrodes of the light emitting elements 300 to be placed on the first resist patterns 210 and the wiring seed layers 110 and 120 .

[0108] As the planar shape of the first resist pattern 210, it is preferable that Figure 2CThis is because the flow path of the plating solution during electroplating bonding can be ensured, and the light emitting element 300 can be stably placed on the first resist pattern 210. As other planar shapes of the first resist pattern 210, any shape such as a square, a rectangle, or a triangle can be adopted.

[0109] The first resist pattern 210 may or may not be in contact with the electrodes 310 and 320 of the light emitting element. When the first resist pattern 210 is in contact with the electrodes 310 and 320 of the light emitting element, the contact area of ​​the first resist pattern with the light emitting element 300 can be increased while ensuring a predetermined necessary and sufficient plating bonding area. Thus, the adhesion between the first resist pattern 210 and the light emitting element 300 can be improved.

[0110] Furthermore, when there are depressions on the surfaces of the electrodes 310 and 320 of the light-emitting element, if plating is grown on the depressions, the plating solution may remain in the depressions after the electroplating bonding is completed, so the plating may not be grown on the depressions provided on the surfaces of the electrodes 310 and 320 of the light-emitting element. In this case, the front end portion of the cross-shaped resist pattern in contact with the electrode surface of the light-emitting element in the top view may cover the depressions existing on the electrode surface of the light-emitting element.

[0111] On the other hand, when the first resist pattern 210 is not in contact with the electrodes 310 and 320 of the light emitting element, the entire electrode is plated and thickened. When flash etching is used to cut off the thin film of a local portion of the wiring seed layer 110, the plated growth region is etched only in the thickness portion of the local portion, and the plated growth region becomes thicker, thereby ensuring the conductivity of the plated growth region.

[0112] As in Embodiment 1, the first resist pattern 210 preferably has adhesiveness. By using a material having higher adhesiveness than the resin material 400 formed on the carrier substrate 500 described later, the first resist pattern 210 can be peeled off from the carrier substrate 500 without causing the light-emitting element to peel off from the first resist pattern when the light-emitting element mounted on the carrier substrate 500 is copied to the substrate 10.

[0113] The height of the first resist pattern 210 is preferably not less than 10 times and not more than 30 times the thickness of the wiring seed layer 110. When flash etching is used to cut off a local portion 110A of the wiring seed layer 110 described later, although the plating growth region connecting the electrode and the wiring seed layer is also etched, since the first resist pattern 210 is a height above a predetermined height, the plating growth region is also thickened in the horizontal direction, so even if the plating growth region is etched due to flash etching, good electrical connectivity between the electrode and the wiring seed layer can be maintained.

[0114] In the step (B), in addition to the formation of the first resist pattern 210 , a second resist pattern 220 is formed on the wiring seed layer 110 on the positive electrode side or on the wiring seed layer 120 on the negative electrode side.

[0115] The second resist pattern 220 may be formed on the wiring seed layer 110 on the positive electrode side or the wiring seed layer 120 on the negative electrode side, in a portion between the light emitting element 300 on one side and the light emitting element 300 on the other side that are adjacent to each other. That is, the second resist pattern 220 may be formed based on the position of the portion between the light emitting element 300 on one side and the light emitting element 300 on the other side that are adjacent to each other being known in advance.

[0116] The following, such as Figure 2C As shown, the second resist pattern 220 is formed on the wiring seed layer 110 on the positive electrode side. The second resist pattern 220 can suppress the plating growth of the wiring seed layer 110 in the formation portion of the second resist pattern 220 in the subsequent electroplating process.

[0117] In order to maintain the thickness (thickness of the film) before the electroplating treatment at the location where the second resist pattern 220 is formed in the wiring seed layer 110, if the wiring seed layer at the location where the second resist pattern 220 is formed is removed by flash etching as described later, the wiring seed layer 110 can be electrically cut off.

[0118] From the viewpoint of further reliably cutting the wiring seed layer 110 , it is preferable that the second resist pattern 220 is formed continuously from one end to the other end in a direction perpendicular to the extending direction of the wiring seed layer 110 in a plan view.

[0119] The second resist pattern 220 may be formed simultaneously with or separately from the first resist pattern 210. By forming the second resist pattern 220 and the first resist pattern 210 simultaneously, the number of steps can be reduced.

[0120] (C) Light-emitting element placement step

[0121] Figure 2E It is a perspective view schematically showing a light emitting element mounting carrier substrate on which a light emitting element is mounted. Figure 2F It is a plan view schematically showing a mode of placing a light emitting element mounting carrier substrate on a first resist pattern. Figure 2G It is schematically indicated Figure 2F A cross-sectional view of a mounting scheme of a light emitting element mounting carrier substrate on a first resist pattern between III and III'.

[0122] like Figure 2E to Figure 2GAs shown, the light emitting element 300 is placed on each first resist pattern 210. Specifically, the light emitting element mounting carrier substrate 600 is placed on at least two first resist patterns 210 formed with a predetermined interval in a manner that the electrode surface 330 of the light emitting element 300 and the first resist pattern 210 face each other. At this time, the p-side electrode 310 of the light emitting element 300 and the wiring seed layer 110 on the positive electrode side are separated and faced, and the n-side electrode 320 of the light emitting element 300 and the wiring seed layer 120 on the negative electrode side are separated and faced.

[0123] Hereinafter, the above-mentioned light emitting element mounting carrier substrate 600 will be described. The process of preparing the light emitting element mounting carrier substrate includes the following steps.

[0124] 1) Formation of a carrier substrate with a resin material

[0125] The resin material 400 is continuously coated on the carrier substrate 500 to obtain the carrier substrate 500 with the resin material 400. For example, as the resin material 400, at least one resin material selected from the group consisting of silicone resin materials, epoxy resin materials, and acrylic resin materials can be cited. Alternatively, as the carrier substrate 500, a glass substrate or the like can be used.

[0126] 2) Lamination of light-emitting elements on a carrier substrate with resin material

[0127] The light emitting element 300 is bonded to the carrier substrate 500 with the resin material 400 . Specifically, the light emitting element 300 is bonded to the single carrier substrate 500 with the resin material in such a way that the light emitting surfaces 340 of at least two light emitting elements 300 are bonded to the resin material 400 on the single carrier substrate 500 .

[0128] In the above manner, the light emitting element mounting carrier substrate 600 in which the light emitting element 300 is mounted on the carrier substrate 500 can be manufactured. Figure 2E In the embodiment, in the light emitting element mounting carrier substrate 600, three light emitting elements 300 are arranged in a row, or more than three, for example, 10,000 to 30,000 light emitting elements 300 may be arranged in a row.

[0129] After the light emitting element mounting carrier substrate 600 is placed on the first resist pattern 210, Figure 2H and Fig.2I As shown, the carrier substrate 500 is peeled off from each light emitting element 300. It should be noted that the carrier substrate 500 may be peeled off after the electroplating bonding step between the wiring seed layer and the light emitting element described later.

[0130] (D) Electroplating bonding step between the wiring seed layer and the electrode of the light emitting element

[0131] Figure 2J It is a cross-sectional view schematically showing a scheme of electroplating bonding between a wiring seed layer and an electrode of a light-emitting element.

[0132] like Figure 2J As shown, using the first anti-etching pattern 210 and the second anti-etching pattern 220 as masks, the wiring seed layer 110 on the positive electrode side and the p-side electrode 310 separated from the wiring seed layer 110 on the positive electrode side, as well as the wiring seed layer 120 on the negative electrode side and the n-side electrode 320 separated from the wiring seed layer 120 on the negative electrode side are electroplated and bonded.

[0133] Since the second resist pattern 220 also functions as a mask, it is possible to suppress the growth of a plating layer at a portion of the wiring seed layer 110 where the second resist pattern 220 is formed during the electroplating process.

[0134] (E) Resist pattern removal step

[0135] Figure 2K It is a cross-sectional view schematically showing a method of removing the resist pattern.

[0136] like Figure 2K As shown, the first resist pattern 210 and the second resist pattern 220 are removed.

[0137] Figure 2L It is a plan view schematically showing a cutting pattern of a local portion of the wiring seed layer corresponding to the removed portion of the second resist pattern. Figure 2M It is a cross-sectional view schematically showing a cut-away view of a local portion of the wiring seed layer corresponding to a portion where the second resist pattern is to be removed.

[0138] After the first resist pattern 210 and the second resist pattern 220 are removed, Figure 2L and Figure 2M As shown in FIG. 1 , the local portion 110A of the wiring seed layer 110 corresponding to the removed portion of the second resist pattern 220 is cut off. Thus, the wiring seed layer 110 can be electrically cut off at the local portion 110A.

[0139] As a cutting method, for example, flash etching can be used. In flash etching, the local portion 110A of the wiring seed layer can be removed by immersing in an etching solution. As another method, the local portion 110A of the wiring seed layer 110 can be removed by using the etching solution as a spray.

[0140] As the etching solution used for flash etching, at least one selected from the group consisting of hydrogen peroxide, sulfuric acid, ammonium persulfate, sodium persulfate, hydrochloric acid, nitric acid, ferric chloride, and cupric chloride can be used.

[0141] Figure 2NIt is a cross-sectional view schematically showing a scheme for performing chemical plating treatment.

[0142] like Figure 2N As shown in FIG. 1 , after cutting off the local portion 110A of the wiring seed layer 110, a chemical plating process can be performed on the conductive member P to form a pad conductive member C. By performing such a plating process, since the wiring seed layer (e.g., Cu) is coated in a manner that does not expose, corrosion of the wiring seed layer can be suppressed, and peeling of the wire from the wiring seed layer can be suppressed. Examples of the layer formed by the chemical plating process include a stack of Ni (nickel), Pd (palladium), and Au (gold) (the outermost surface is Au), or a stack of Au (gold), Pd (palladium), and Au (gold).

[0143] As described above, at least two light emitting elements 300 can be accurately mounted on the substrate 100. As a result, the light emitting device of Embodiment 2 can be manufactured.

[0144] According to the conventional method, the seed layer pattern formed on the upper surface of the transparent substrate is used as a mask, and the adhesive layer portion exposed and hardened from the back of the substrate is used as the adhesive layer pattern for holding the light-emitting element during the electroplating process. That is, since the adhesive layer pattern must be an inverted pattern of the seed layer pattern, the design of the holding pattern of the light-emitting element and the circuit pattern are inseparable, which restricts the circuit pattern. For example, when it is desired to make electrical and mechanical connections to an island-shaped circuit portion separated from the surrounding area directly below the light-emitting element, the wiring seed layer needs to be in an island shape in the conventional method. Since it cannot be energized in this case, the plating growth of the electrolytic plating cannot be performed, and it cannot be connected to the light-emitting element side electrode.

[0145] In addition, since the island region is surrounded by the light emitting element, substrate and adhesive layer and the flow path of the plating solution is closed, it cannot be connected even by chemical plating. Therefore, it is impossible to form an island-shaped light emitting element holding and wiring pattern directly below the light emitting element.

[0146] However, in the manufacturing method of Embodiment 2, in addition to the pattern of the wiring seed layer, the pattern shape of the wiring seed layer after electroplating can also be specified by the resist layer. Therefore, by combining with subsequent etching (flash etching) and the like, a free pattern shape of the wiring seed layer like an island-shaped wiring seed layer can be obtained.

[0147] In Embodiment 2, since the wiring seed layer 110 on the positive electrode side is cut off, but the wiring seed layer 120 on the negative electrode side is not cut off, the negative electrode side of each light-emitting element is a common electrode, and the positive electrode side of each light-emitting element is an electrode independent of each other. Thus, each light-emitting element can be independently lit. It should be noted that, in the case of cutting off the wiring seed layer 120 on the negative electrode side, but not cutting off the wiring seed layer 110 on the positive electrode side, the positive electrode side of each light-emitting element is a common electrode, and the negative electrode side of each light-emitting element is an electrode independent of each other. Even in this case, the lighting control of each light-emitting element can be performed independently.

[0148] In the above, the content of pasting a "single" light emitting element mounting carrier substrate 600 on at least two first resist patterns 210 formed with a predetermined interval is described. However, it is not limited to this. For example, "at least two" light emitting element mounting carrier substrates 600 can be pasted on the at least two first resist patterns 210 with a predetermined interval. In this case, the first resist pattern 210 can be formed into a shape extending in the same direction as the wiring seed layer extending direction in a top view.

[0149] [Light-emitting device]

[0150] The light-emitting device obtained by the manufacturing method of the above-mentioned Embodiments 1 and 2 can have the following structure. Figure 3 It is a cross-sectional view schematically showing the structure of a light emitting device according to one embodiment of the present invention. Figure 4 2 is a cross-sectional view schematically showing the structure of a light emitting device according to another embodiment of the present invention. Figure 3 As shown, a light-emitting device 70 of one embodiment of the present invention comprises: a wiring substrate 10X, which comprises a wiring 11 on the positive side and a wiring 12 on the negative side, which are arranged on the substrate 10 and the substrate 10; a light-emitting element 30, which is located on the wiring substrate 10X and comprises a p-side electrode 31 and an n-side electrode 32; a first conductive component P1, which connects the wiring 11 on the positive side and the electrode 31 on the p side; and a second conductive component P2, which connects the wiring 12 on the negative side and the n-side electrode 32.

[0151] In this configuration, one embodiment of the present invention is that in the cross-sectional view, the outer side surfaces P11 and P21 of at least one of the first conductive component P1 and the second conductive component P2 are configured to protrude outwardly compared to the straight line connecting the outer ends 11a and 12a of the wiring and the outer ends 31a and 32a of the electrodes. It should be noted that the "cross-sectional view" referred to here refers to a view observed from a direction cutting the p-side electrode 31 and the n-side electrode 32 and the positive electrode side wiring 11 and the negative electrode side wiring 12 respectively arranged opposite to them.

[0152] In the conductive component formation stage in the manufacturing process of the above-mentioned light-emitting device, the conductive component is formed by growing from the wiring seed layer toward the electrode, with one side surface along the side surface of the resist layer and the other side surface growing in the vacant space between the light-emitting element 30 and the wiring substrate 10X. The shape of the inner side surface P12 and P22 of the first conductive component P1 and the second conductive component P2 can be determined by the side surface shape of the resist pattern formed on the substrate in the above-mentioned conductive component formation stage. As described above, in the case where the cross-sectional shape of the resist pattern is rectangular or square, since the side surface of the resist pattern is orthogonal to the upper surface of the wiring, the shape of the inner side surface P12 and P22 of the first conductive component P1 and the second conductive component P2 can also be orthogonal to the upper surface of the wiring (corresponding to the wiring seed layer in the manufacturing process) when the manufacturing is completed. The "orthogonal" mentioned here refers to the state in which the angle between the inner side surface of the conductive component and the upper surface of the wiring in the cross-sectional view is 90 degrees or 90 degrees ± 5 degrees. It should be noted that the inner side surface of the first conductive component P1 and the second conductive component P2 is not limited to being perpendicular to the upper surface of the wiring. The inner side surface of at least one of the first conductive component P1 and the second conductive component P2 may be perpendicular to the upper surface of the wiring.

[0153] On the other hand, the shapes of the outer side surfaces P11 and P21 of the first conductive component P1 and the second conductive component P2 finally obtained do not depend on the side surface shape of the resist pattern. For this reason, it can be seen that the outer side surfaces P11 and P21 of the conductive component finally obtained protrude outward compared to the straight line connecting the ends 11a and 12a of the wiring and the ends 31a and 32a of the electrodes of the light-emitting element 30. By protruding the outer side surface of the conductive component, the contact area between the conductive component and the light-emitting element is increased, so the heat dissipation can be improved. In addition, as mentioned above, since the inner side surface of the conductive component is a side that grows along the side surface of the resist pattern configured in the manufacturing process, after the removal of the resist pattern, the first conductive component P1 and the second conductive component P2 finally obtained become a state of being vacant with a certain interval. Therefore, the occurrence of a short circuit caused by the contact between the first conductive component P1 and the second conductive component P2 can be appropriately avoided. From the above situation, it can be seen that according to the light-emitting device 70 of one embodiment of the present invention, it is possible to simultaneously improve the heat dissipation and suppress the occurrence of a short circuit.

[0154] It should be noted that, in the cross-sectional view, the position of the protruding end of the conductive member is different depending on the positional relationship between the end portions 31a, 32a of the electrode and the end portions 11a, 12a of the wiring. Figure 3 As shown in FIG. 1 , in the cross-sectional view, when the ends 31a and 32a of the electrodes are located outside the ends 11a and 12a of the wiring, a configuration can be adopted in which the protruding end PX of the conductive member P is located on the side of the electrodes 31 and 32. Figure 4 As shown, in the cross-sectional view, when the ends 11αa and 12αa of the wiring are located outside the ends 31αa and 32αa of the electrode, the protruding end PY of the conductive member can be located on the substrate 10α side.

[0155] Furthermore, as described in the manufacturing method of the present invention, since the conductive member can be formed without exposing the substrate to form an adhesive layer pattern, not only a transparent substrate but also a non-transparent substrate can be used as the substrate. Therefore, the types of substrates that can be used can be increased.

[0156] The light-emitting element used in Embodiment 1 and Embodiment 2 includes a semiconductor stack and an electrode. The light-emitting element includes: a light-emitting surface (also called a main light-emitting surface), a side surface extending in a different direction (for example, a vertical direction) relative to the light-emitting surface, and an electrode surface on the opposite side of the light-emitting surface, that is, a positive and negative pair of electrodes.

[0157] As the light-emitting element, a semiconductor light-emitting element capable of emitting light having any wavelength can be selected. For example, as the light-emitting element, a light-emitting diode or the like can be selected. As an example, as the light-emitting element, an element emitting cyan light can be used. This is not limited to this, and as the light-emitting element, an element emitting light of a color other than cyan light can also be used. In the case of using a plurality of light-emitting elements arranged separately at predetermined intervals in the light-emitting device, elements each emitting light of the same color can be used, or elements emitting light of different colors can be used.

[0158] For example, a nitride semiconductor (In x Al y Ga 1-x-y N, 0≤X, 0≤Y, X+Y≤1). In this case, the nitride semiconductor light emitting element is, for example, a stacked structure having a sapphire substrate and a nitride semiconductor stacked on the sapphire substrate. The nitride semiconductor stacked structure includes a light emitting layer, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer positioned in a manner of sandwiching the light emitting layer. The electrodes, namely the n-side electrode and the p-side electrode, are electrically connected to the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

[0159] The light emitting element may have any shape in the top view, such as a square, rectangle, or the like. In addition, it may be a polygon such as a triangle or a hexagon. The size of the light emitting element 30 in the top view may have a vertical and horizontal size of, for example, 10 μm to 100 μm, preferably 20 μm to 80 μm. The height of the light emitting element 30 is 1 μm to 50 μm, preferably 2 μm to 10 μm.

[0160] In either of Embodiment 1 and Embodiment 2, the following configuration is preferably adopted.

[0161] After the light-emitting element is arranged on the substrate, from the viewpoint of easily guiding the light emitted from the light-emitting element to a predetermined direction, it is preferred to arrange the light-reflecting component in a manner surrounding the side of the light-emitting element. In the case where a plurality of light-emitting elements are arranged adjacent to each other, they can be arranged in a manner that fills the space between adjacent light-emitting elements. The light-reflecting component can use, for example, a white resin in which a white powder that reflects light is added to a transparent resin. The light-reflecting component can be, for example, a silicone resin containing an inorganic white powder such as titanium oxide. From the viewpoint of appropriately reflecting the light emitted from the light-emitting element, the light-reflecting component can be a white resin having a reflectivity of, for example, 60% or more relative to the light, preferably a white resin having a reflectivity of 90% or more. As a method for forming a light-reflecting component on the side of the light-emitting element, a resist layer is arranged on the upper surface of the light-emitting element, and after applying the white resin on the upper surface of the light-emitting element and between the adjacent light-emitting elements, the white resin remaining on the side of the light-emitting element becomes a light-reflecting component by removing the resist layer arranged on the upper surface of the light-emitting element.

[0162] The light-transmitting member may be disposed between the side surface of the light-emitting element and the light-reflecting member and / or on the light-emitting surface of the light-emitting element. Examples of the material of the light-transmitting member include silicone resin, epoxy resin, and acrylic resin.

[0163] A wavelength conversion component can be provided on the light-emitting surface side of the light-emitting element, which can absorb the light emitted from the light-emitting element and convert it into light of a different wavelength. The wavelength conversion component is composed of a wavelength conversion material such as a phosphor. Examples of the phosphor include YAG phosphor ((Y, Lu, Gd) 3 (Al, Ga) 5 O 12 :Ce), β-sialon phosphor emitting green light, fluoride phosphor emitting red light (such as K2(Si,Ti,Ge)F6:Mn, etc.), nitride phosphor (such as Sr,Ca)AlSiN3:Eu), etc. The wavelength conversion component can include a single wavelength conversion material or multiple wavelength conversion materials.

[0164] Although one embodiment of the present invention has been described above, it is only a typical example to illustrate the application range of the present invention. Therefore, the present invention is not limited to this, and various modifications can be made to make it easy for those skilled in the art to understand.

[0165] Industrial Applicability

[0166] The light emitting device of this embodiment can be applied to a headlight of a car, a projector, and the like.

[0167] Description of Reference Numerals

[0168] 10. substrate;

[0169] 10X, 10Xα wiring substrate;

[0170] 11: wiring seed layer on the positive electrode side;

[0171] 11a, 11αa wiring end portion on the positive electrode side;

[0172] 12: wiring seed layer on the negative electrode side;

[0173] 12a, 12αa wiring end portion on the negative electrode side;

[0174] 20 resist pattern;

[0175] 30,30α light emitting element;

[0176] 31, 31α P-side electrode of the light emitting element;

[0177] 31a, 31αa: an end portion of the electrode on the P side;

[0178] 32, 32α n-side electrode of the light emitting element;

[0179] 32a, 32αan side electrode end;

[0180] 33: electrode surface of the light emitting element;

[0181] 70, 70α light emitting device;

[0182] 100 substrate;

[0183] 110: a wiring seed layer on the positive electrode side;

[0184] 120: a wiring seed layer on the negative electrode side;

[0185] 210 first resist pattern;

[0186] 220 second resist pattern;

[0187] 300 Light emitting elements;

[0188] 310 P-side electrode of the light emitting element;

[0189] 320 n-side electrode of the light emitting element;

[0190] 330 electrode surface of the light emitting element;

[0191] 340 light emitting surface of the light emitting element;

[0192] 400 resin material;

[0193] 500 carrier substrate;

[0194] 600 A light emitting element is mounted on a carrier substrate;

[0195] P conductive parts;

[0196] P1, P1α first conductive component;

[0197] P11 an outer side surface of the first conductive component;

[0198] P12 inner side surface of the first conductive component;

[0199] P2, P2α second conductive component;

[0200] P21 The second conductive component measures the outer side surface;

[0201] P22 The second conductive component measures the inner side surface;

[0202] PX, PY protruding end of the conductive part;

[0203] C pad conductive part.

Claims

1. A method for manufacturing a light-emitting device, comprising the step of providing a light-emitting element having a p-side electrode and an n-side electrode on the same side on a substrate, characterized in that: The steps sequentially include: a step of preparing a substrate on which a wiring seed layer on the positive electrode side and a wiring seed layer on the negative electrode side are formed with a predetermined gap therebetween; A step of forming at least a portion of a resist pattern in a region on the substrate where the light emitting element is placed; A step of placing the light emitting element on the resist pattern in such a manner that the p-side electrode and the wiring seed layer on the anode side are spaced apart and opposed to each other, and the n-side electrode and the wiring seed layer on the cathode side are spaced apart and opposed to each other; A step of electroplating and bonding the wiring seed layer on the positive electrode side and the p-side electrode separated from the wiring seed layer on the positive electrode side, and the wiring seed layer on the negative electrode side and the n-side electrode separated from the wiring seed layer on the negative electrode side, using the resist pattern as a mask; A step of removing the resist pattern.

2. A method for manufacturing a light-emitting device, comprising the step of providing a light-emitting element having a p-side electrode and an n-side electrode on the same side on a substrate, characterized in that: The steps sequentially include: forming a wiring seed layer on the positive electrode side and a wiring seed layer on the negative electrode side on the substrate; A step of forming at least a portion of a resist pattern in a region on the substrate where the light emitting element is placed; A step of placing the light emitting element on the resist pattern in such a manner that the p-side electrode and the wiring seed layer on the anode side are spaced apart and opposed to each other, and the n-side electrode and the wiring seed layer on the cathode side are spaced apart and opposed to each other; A step of electroplating and bonding the wiring seed layer on the positive electrode side and the p-side electrode separated from the wiring seed layer on the positive electrode side, and the wiring seed layer on the negative electrode side and the n-side electrode separated from the wiring seed layer on the negative electrode side, using the resist pattern as a mask; A step of removing the resist pattern.

3. The manufacturing method according to claim 1 or 2, wherein: The resist pattern is formed to have a planar size smaller than a planar size of the light emitting element.

4. The manufacturing method according to claim 1 or 2, wherein: The resist pattern has adhesiveness, and thus can adhere and support the mounted light emitting element.

5. The manufacturing method according to claim 1 or 2, wherein: The substrate is non-transparent.

6. The manufacturing method according to claim 1 or 2, At least two of the light-emitting elements are arranged on the substrate, forming the interconnect seed crystal layers on the substrate so that the interconnect seed crystal layer on the positive electrode side and the interconnect seed crystal layer on the negative electrode side extend in substantially the same direction, On the substrate, at least a portion of the resist pattern is formed in each region where at least two light emitting elements are placed at a predetermined interval, and the light emitting elements are arranged on each resist pattern.

7. The manufacturing method according to claim 6, wherein: A second resist pattern is further formed on the wiring seed layer on the positive electrode side or on the wiring seed layer on the negative electrode side and in a portion between one of the light emitting elements and the other of the light emitting elements adjacent to each other.

8. The manufacturing method according to claim 7, wherein: The second resist pattern is formed continuously from one end to the other end in a direction perpendicular to the extending direction of the wiring seed layer on the positive electrode side or the wiring seed layer on the negative electrode side.

9. The manufacturing method according to claim 7, wherein: After the resist pattern and the second resist pattern are removed, the wiring seed layer is cut at the removed portion of the second resist pattern.

10. The manufacturing method according to claim 8, wherein: After the resist pattern and the second resist pattern are removed, the wiring seed layer is cut at the removed portion of the second resist pattern.

11. The manufacturing method according to claim 6, wherein: The method comprises the steps of preparing a carrier substrate for mounting a light-emitting element, wherein before placing the light-emitting element on the resist pattern, the light-emitting element is disposed on the carrier substrate in such a manner that the light-emitting surface of the light-emitting element and the carrier substrate face each other, The light emitting element mounting carrier substrate is disposed on the resist pattern so that the electrode surface of the light emitting element of the light emitting element mounting carrier substrate faces the resist pattern, and the carrier substrate is peeled off from the light emitting element mounting carrier substrate.

12. The manufacturing method according to claim 1 or 2, wherein: At least one of the wiring seed layer on the positive electrode side and the wiring seed layer on the negative electrode side includes a recessed portion in a plan view, and the resist pattern is formed so as to enter the recessed portion.

13. The manufacturing method according to claim 1 or 2, wherein: In the cross-sectional view, the height of the resist pattern on which the light emitting element is placed is made higher than the heights of the wiring seed layer on the anode side and the wiring seed layer on the cathode side.

14. A light emitting device manufactured according to the manufacturing method according to any one of claims 1 to 13, characterized in that: have: A wiring substrate including a substrate and a positive electrode side wiring and a negative electrode side wiring arranged on the substrate; a light emitting element, which is located on the wiring substrate and has a p-side electrode and an n-side electrode; A first conductive member connecting the positive electrode side wiring and the p-side electrode; a second conductive member connecting the cathode-side wiring and the n-side electrode; In the cross-sectional view, an outer side surface of at least one of the first conductive member and the second conductive member protrudes outward from a straight line connecting an outer end portion of the wiring and an outer end portion of the electrode.

15. The light emitting device according to claim 14, wherein: In the cross-sectional view, the end of the electrode is located outside the end of the wiring, and the protruding end of the conductive member is located on the electrode side.

16. The light emitting device according to claim 14, wherein: In the cross-sectional view, the end of the wiring is located outside the end of the electrode, and the protruding end of the conductive member is located on the substrate side.

17. The light emitting device according to any one of claims 14 to 16, wherein: In the cross-sectional view, an inner side surface of at least one of the first conductive member and the second conductive member is perpendicular to an upper surface of the wiring.

18. The light emitting device according to any one of claims 14 to 16, wherein: The substrate is non-transparent.

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