Ion exchange modulatable optical splitter based on SiON waveguide and its preparation process

Abstract

The invention relates to the field of integrated optical splitters, and discloses an ion exchange modulated optical splitter based on SiON waveguide and a preparation process thereof, comprising a first metal electrode, an ion exchange region, a SiO2 upper cladding, a SiON waveguide, a second metal electrode, a SiO2 lower cladding and a silicon substrate. The first metal electrode is located on the upper surface of the ion exchange region, the ion exchange region is located on the upper surface of the SiON waveguide, and the ion exchange region is placed in the SiO2 upper cladding, the SiON waveguide is located above the silicon substrate, the upper surface of the SiON waveguide is in contact with the lower surface of the SiO2 upper cladding, the lower surface of the SiON waveguide is in contact with the upper surface of the SiO2 lower cladding, the SiO2 lower cladding is located on the upper surface of the second metal electrode, the second metal electrode is attached to the upper surface of the silicon substrate, and the diffusion of doped ions in the ion exchange region to the SiON waveguide is controlled by the capacitive electric field formed by the two metal electrodes, so as to achieve the purpose of modulating the waveguide propagation mode and the splitting ratio of the splitter.

Description

Technical Field

[0001] The invention relates to the field of integrated optical splitters, and in particular to an ion exchange modulated optical splitter based on SiON waveguide and a preparation process thereof. Background Art

[0002] With the continuous progress and development of science and technology, the research of communication technology has also made great breakthroughs. As the key to the basic network, the optical communication network occupies a core position in the communication network. Among them, optical transmission technology is a new generation of network communication technology that combines information transmission function and independent storage and switching function, and plays an important role in the optical communication network. In optical communication and optical transmission networks, optical splitters are usually used to realize functions such as changing the transmission direction of optical signals and distributing the power of optical signals in different branches. They are key integrated optical devices that are indispensable for FTTH (fiber to the home) in FTTx (fiber to the x) optical fiber access network technology.

[0003] Planar monolithic integrated photonic technology is also known as planar lightwave circuit (PLC). The optical waveguide material systems used to make planar lightwave circuits mainly include ion exchange glass-based systems, Si / SiO2, GeO2-SiO2 / SiO2, lnGaAsP / lnP, SiON / SiO2, etc. With the high integration of optical transmission links, large-scale integrated photonic systems have put forward higher requirements for the miniaturization of optical branching devices. In planar optical waveguide systems, optical waveguide devices are mostly connected by curved waveguides, in which the radius of the curved waveguide will determine the size of the entire planar optical waveguide system. The size of the planar optical waveguide system will also decrease as the waveguide bending radius decreases, but it will also lead to an increase in waveguide bending loss. Planar waveguide material systems with high refractive index contrast (waveguide core layer and confinement layer) will help reduce the bending loss of the waveguide, and waveguide material systems with high refractive index contrast have better ability to confine waveguide modes. Therefore, silicon oxynitride (SiON) planar optical waveguide systems with high refractive index contrast may become key devices in large-scale integrated photonic systems.

[0004] With the development of the big data era and 5G communication technology, SiON planar optical waveguide splitters have been widely used in data center optical interconnection networks and communication base station construction, and have become one of the most critical passive components in passive optical transmission networks. However, the current SiON planar optical waveguide splitters are difficult to meet the needs of various application scenarios due to the lack of modulation methods. Since the upper and lower limiting layers of the SiON planar optical waveguide are SiO2, it is difficult to achieve electric field control of the waveguide propagation mode through ion exchange. Most of the current solutions use the thermo-optical effect of SiON materials to heat and modulate the waveguide. This modulation method has a slow response speed and generates high power consumption during the modulation process. Summary of the invention

[0005] The purpose of the present invention is to provide an ion exchange modulated optical splitter based on SiON waveguide and its preparation process in order to overcome the defects of the prior art. The splitter can control the ion exchange process in the optical splitter through the capacitive electric field formed by two metal electrodes, so as to achieve the purpose of controlling the waveguide propagation mode. The modulation method has a fast response speed and low power consumption.

[0006] To achieve the above purpose, the present invention provides the following two technical solutions:

[0007] The first technical solution: an ion exchange modulatable optical splitter based on SiON waveguide, comprising a first metal electrode, an ion exchange region, a SiO2 upper cladding, a SiON waveguide, a second metal electrode, a SiO2 lower cladding and a silicon substrate.

[0008] The first metal electrode is located on the upper surface of the ion exchange region, the ion exchange region is located on the upper surface of the SiON waveguide, and the ion exchange region is placed in the SiO2 upper cladding, the SiON waveguide is located above the silicon substrate, the upper surface of the SiON waveguide is in contact with the lower surface of the SiO2 upper cladding, the lower surface of the SiON waveguide is in contact with the upper surface of the SiO2 lower cladding, the SiO2 lower cladding is located on the upper surface of the second metal electrode, and the second metal electrode is located on the upper surface of the silicon substrate.

[0009] The first metal electrode and the second metal electrode are connected to an external power source to form a capacitive electric field, thereby being able to regulate the ion diffusion in the ion exchange region.

[0010] The structure of the SiON waveguide can be fabricated into a Mach-Zehnder interferometer, a directional coupler or a Y branch.

[0011] The second metal electrode is prepared on the upper surface of the silicon substrate by electron beam thermal evaporation process.

[0012] The SiO2 upper cladding layer is prepared by a sol-gel method.

[0013] The SiO2 lower cladding layer is prepared by PEVCD (plasma enhanced chemical vapor deposition).

[0014] The first metal electrode is prepared by electron beam thermal evaporation process and lift-off process (metal stripping process).

[0015] The ion exchange region is prepared by photolithography and wet etching processes.

[0016] The first metal electrode and the second metal electrode are bonded to a PCB (printed circuit board) by means of a probe or a lead, and the probe or the lead can be connected to any position of the metal electrode. The first metal electrode is connected to the positive pole of an external power supply, and the second metal electrode is connected to the negative pole of an external power supply.

[0017] The preparation process of ion exchange modulatable optical splitter based on SiON waveguide is characterized in that the process comprises the following steps:

[0018] 1) Fabrication of a second metal electrode, depositing the second metal electrode on a silicon substrate by electron beam thermal evaporation;

[0019] 2) Fabrication of SiO2 lower cladding, SiON waveguide and SiO2 upper cladding: first, the SiO2 lower cladding and SiON waveguide are deposited by PECVD, then the SiON waveguide is prepared by photolithography and RIE (reactive ion etching technology), and finally, the SiO2 upper cladding containing Li+ capable of ion exchange is prepared by sol-gel method;

[0020] 3) Fabrication of the ion exchange region: depositing a mask on the surface of the SiO2 upper cladding layer, and preparing an ion exchange window by photolithography and wet etching processes; placing the SiON planar optical waveguide device with the ion exchange window in a molten salt containing doped ions at high temperature for ion exchange;

[0021] 4) The first metal electrode is produced by first removing the surface deposition mask of the SiO2 upper cladding layer by a wet etching process, and then preparing a metal electrode window on the upper surface of the SiON planar optical waveguide device by a photolithography process;

[0022] 5) Finally, a metal thermocouple film is deposited on the upper surface of the SiON planar optical waveguide device by electron beam thermal evaporation, and the metal thermocouple film except the metal electrode window is peeled off by a lift-off process to prepare a first metal electrode;

[0023] 6) Exposure of the second metal electrode: the structure of the SiON planar optical waveguide device at the edge is removed by ICP dry etching, so that the second metal electrode can be exposed.

[0024] The SiON planar optical waveguide device refers to an integral structure formed by an ion exchange region, a SiO2 upper cladding layer, a SiON waveguide, a first metal electrode, a second metal electrode, a SiO2 lower cladding layer and a silicon substrate in an integrated manner.

[0025] The integration method refers to the common meaning of the integration method used in integrated circuit boards in the art.

[0026] In the step 2), a SiON waveguide is prepared by photolithography and RIE (reactive ion etching), and the structure of the SiON waveguide can be prepared as a Mach-Zehnder interferometer, a directional coupler or a Y branch.

[0027] The modulatable optical splitter of the SiON waveguide material of the technical solution can realize the modulation of the optical splitter through the capacitive electric field formed by the first metal electrode and the second metal electrode to achieve its technical purpose.

[0028] The second technical solution: an ion exchange modulatable optical splitter based on SiON waveguide, comprising a first metal electrode, an ion exchange region, a SiO2 upper cladding, a SiON waveguide, a second metal electrode, a SiO2 lower cladding and a silicon substrate.

[0029] The first metal electrode is located on the upper surface of the ion exchange region, the ion exchange region is located on the upper surface of the SiON waveguide, and the ion exchange region is placed in the SiO2 upper cladding, the SiON waveguide is located above the silicon substrate, the upper surface of the SiON waveguide is in contact with the lower surface of the SiO2 upper cladding, the lower surface of the SiON waveguide is in contact with the upper surface of the SiO2 lower cladding, the SiO2 lower cladding is located on the upper surface of the second metal electrode, and the second metal electrode is located on the upper surface of the silicon substrate.

[0030] The first metal electrode and the second metal electrode are connected to an external power source to form a capacitive electric field, thereby being able to regulate the ion diffusion in the ion exchange region.

[0031] The structure of the SiON waveguide can be fabricated into a Mach-Zehnder interferometer, a directional coupler or a Y branch.

[0032] The second metal electrode is prepared on the upper surface of the silicon substrate by electron beam thermal evaporation process.

[0033] The SiO2 upper cladding layer is prepared by a sol-gel method.

[0034] The SiO2 lower cladding layer is prepared by PEVCD (plasma enhanced chemical vapor deposition).

[0035] The first metal electrode is prepared by electron beam thermal evaporation process and lift-off process (metal stripping process).

[0036] The ion exchange region is prepared by photolithography and wet etching processes.

[0037] The first metal electrode and the second metal electrode are bonded to a PCB (printed circuit board) by means of a probe or a lead, and the probe or the lead can be connected to any position of the metal electrode. The first metal electrode is connected to the positive pole of an external power supply, and the second metal electrode is connected to the negative pole of an external power supply.

[0038] The preparation process of ion exchange modulatable optical splitter based on SiON waveguide is characterized in that the process comprises the following steps:

[0039] 1) Fabrication of a second metal electrode, depositing the second metal electrode on a silicon substrate by electron beam thermal evaporation;

[0040] 2) Fabrication of SiO2 lower cladding, SiON waveguide and SiO2 upper cladding: first, the SiO2 lower cladding and SiON waveguide core layer are deposited by PECVD, then the SiON waveguide is prepared by photolithography and RIE (reactive ion etching technology), and finally, the SiO2 upper cladding containing Li+ capable of ion exchange is prepared by sol-gel method;

[0041] 3) Fabrication of the ion exchange region: depositing a mask on the surface of the SiO2 upper cladding layer, and preparing an ion exchange window by photolithography and wet etching processes; placing the SiON planar optical waveguide device with the ion exchange window in a molten salt containing doped ions at high temperature for ion exchange;

[0042] 4) The first metal electrode is produced by first removing the surface deposition mask of the SiO2 upper cladding layer by a wet etching process, and then preparing a metal electrode window on the upper surface of the SiON planar optical waveguide device by a photolithography process;

[0043] 5) Finally, a metal thermocouple film is deposited on the upper surface of the SiON planar optical waveguide device by electron beam thermal evaporation, and the metal thermocouple film except the metal electrode window is peeled off by a lift-off process to prepare a first metal electrode;

[0044] 6) Exposing the second metal electrode, removing part of the structure of the SiON planar optical waveguide device by ICP dry etching, retaining the edge of the SiON planar optical waveguide device, so that the second metal electrode can be exposed and a through-hole structure is left.

[0045] The SiON planar optical waveguide device refers to an integral structure formed by an ion exchange region, a SiO2 upper cladding layer, a SiON waveguide, a first metal electrode, a second metal electrode, a SiO2 lower cladding layer and a silicon substrate in an integrated manner.

[0046] The integration method refers to the common meaning of the integration method used in integrated circuit boards in the art.

[0047] In the step 2), a SiON waveguide is prepared by photolithography and RIE (reactive ion etching), and the structure of the SiON waveguide can be prepared as a Mach-Zehnder interferometer, a directional coupler or a Y branch.

[0048] The preparation process shows that the silicon substrate and the second metal electrode are integrated and connected with each other, the second metal electrode and the SiO2 lower cladding are integrated and connected with each other, the SiO2 lower cladding and the SiON waveguide are integrated and connected with each other, the SiON waveguide and the SiO2 upper cladding are integrated and connected with each other, the ion exchange region and the first metal electrode are integrated and connected with each other, and the ion exchange region is placed in the SiO2 upper cladding.

[0049] The modulatable optical splitter of SiON waveguide material of this technical solution can realize the modulation of the optical splitter through the capacitive electric field formed by the first metal electrode and the second metal electrode, and the formed through-hole structure is conducive to the improvement of electrical interconnection performance and has a higher interconnection density, so as to better achieve its technical purpose.

[0050] Compared with the prior art, the beneficial effects of the present invention are as follows: compared with the scheme of using the thermo-optical effect of SiON material to heat and modulate the splitting ratio in the optical splitter, the ion exchange modulated optical splitter based on SiON waveguide of the present invention uses two metal electrodes to form a capacitive electric field to control the diffusion process of metal doped ions in the ion exchange region to the SiON waveguide, thereby achieving the purpose of controlling the waveguide propagation mode, and finally achieving the purpose of modulating the splitting ratio of the optical splitter of the SiON waveguide material. Moreover, the optical splitter with a through-hole structure in the technical solution 2 of the present invention is conducive to the improvement of electrical interconnection performance and has a higher interconnection density, so as to achieve its technical purpose. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 It is a cross-sectional view of an ion-exchange modulated optical splitter based on SiON waveguide according to the first embodiment of the present invention;

[0052] Figure 2 It is a cross-sectional view of an ion-exchange modulated optical splitter based on SiON waveguide according to the second embodiment of the present invention;

[0053] Figure 3 A top view of a Mach-Zehnder interferometer optical splitter according to a first embodiment of the present invention

[0054] Figure 4 A three-dimensional stereogram of a Mach-Zehnder interferometer optical splitter according to a first embodiment of the present invention;

[0055] Figure 5 A three-dimensional diagram of a directional coupler optical splitter according to a first embodiment of the present invention;

[0056] Figure 6 A three-dimensional diagram of a Y-branch optical splitter according to a first embodiment of the present invention;

[0057] In the figure: 101 is the first metal electrode; 102 is the ion exchange region; 103 is the SiO2 upper cladding; 104 is the SiON waveguide; 105 is the second metal electrode; 106 is the SiO2 lower cladding; 107 is the silicon substrate. DETAILED DESCRIPTION

[0058] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0059] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the structure or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0060] The present invention relates to an ion exchange modulated optical splitter based on SiON waveguide and a preparation process thereof, which specifically include two different optical splitter structures and corresponding preparation process flows. The specific implementation plans of these two different optical splitters and their preparation processes will be introduced below.

[0061] Embodiment 1:

[0062] The ion exchange modulated optical splitter based on SiON waveguide and its preparation process include a first metal electrode 101, an ion exchange region 102, a SiO2 upper cladding layer 103, a SiON waveguide 104, a second metal electrode 105, a SiO2 lower cladding layer 106 and a silicon substrate 107. The first metal electrode 101 is located on the upper surface of the ion exchange region 102; the ion exchange region 102 is located on the upper surface of the SiON waveguide 104, and the ion exchange region 102 is placed in the SiO2 upper cladding layer; the SiON waveguide 104 is located above the silicon substrate 107, the upper surface of the SiON waveguide 104 is in contact with the lower surface of the SiO2 upper cladding layer 103, and the lower surface of the SiON waveguide 104 is in contact with the upper surface of the SiO2 lower cladding layer 106; the SiO2 lower cladding layer 106 is attached to the upper surface of the second metal electrode 105; the second metal electrode 105 is attached to the upper surface of the silicon substrate 107. The structure of SiON waveguide 104 can be fabricated into Mach-Zehnder interferometer, directional coupler (such as Figure 5 as shown) or Y branch (as Figure 6 The capacitive electric field formed by the first metal electrode 101 and the second metal electrode 105 drives the Mach-Zehnder interferometer optical splitter in this embodiment (the cross-sectional view is shown in FIG. Figure 1 As shown, the top view is as Figure 3 As shown, the three-dimensional image is Figure 4 As shown in the figure, ion diffusion is performed to achieve the purpose of modulating the splitting ratio of the optical splitter of the SiON waveguide material.

[0063] The manufacturing process of the modulatable optical splitter in this embodiment is as follows:

[0064] The first step is to manufacture the second metal electrode 105 by depositing the second metal electrode 105 on the silicon substrate 107 by electron beam thermal evaporation;

[0065] The second step is to prepare the SiO2 lower cladding 106, SiON waveguide 104 and SiO2 upper cladding 103. First, the SiO2 lower cladding 106 and SiON waveguide core layer are deposited by PECVD, and then the SiON waveguide 104 is prepared by photolithography and RIE (reactive ion etching technology). Finally, the SiO2 upper cladding 103 containing Li+ and capable of ion exchange is prepared by the sol-gel method.

[0066] The third step is to prepare the ion exchange region 102, deposit a mask on the surface of the SiO2 upper cladding layer 103, and prepare an ion exchange window by photolithography and wet etching processes; place the SiON planar optical waveguide device with the ion exchange window in a molten salt containing doped ions at high temperature for ion exchange;

[0067] Step 4: The first metal electrode 101 is manufactured by first removing the surface deposition mask of the SiO2 upper cladding layer 103 by a wet etching process, and then preparing a metal electrode window on the upper surface of the SiON planar optical waveguide device by a photolithography process;

[0068] Step 5: Finally, a metal thermocouple film is deposited on the upper surface of the SiON planar optical waveguide device by electron beam thermal evaporation, and the metal thermocouple film except the metal electrode window is peeled off by a lift-off process to prepare a first metal electrode 101;

[0069] Step 6: The second metal electrode 105 is exposed. The structure of the SiON planar optical waveguide device at the edge is removed by ICP dry etching, so that the second metal electrode 105 can be exposed.

[0070] Embodiment 2:

[0071] An ion exchange modulated optical splitter based on SiON waveguide and its preparation process include a first metal electrode 101, an ion exchange region 102, a SiO2 upper cladding 103, a SiON waveguide 104, a second metal electrode 105, a SiO2 lower cladding 106 and a silicon substrate 107. The first metal electrode 101 is located above the ion exchange region 102; the ion exchange region 102 is located above the SiON waveguide 104, and the ion exchange region 102 is placed in the SiO2 upper cladding; the SiON waveguide 104 is located above the silicon substrate 107, the SiO2 upper cladding 103 is located above the SiON waveguide 104, and the SiO2 lower cladding 106 is located below the SiON waveguide 104; the second metal electrode 105 is located on the upper surface of the silicon substrate 107. The structure of the SiON waveguide (104) can be prepared into a Mach-Zehnder interferometer, a directional coupler or a Y branch. The capacitive electric field formed by the first metal electrode 101 and the second metal electrode 105 drives the directional coupler optical splitter (cross-sectional view as shown in FIG. Figure 2 As shown, the three-dimensional image is Figure 4 The through-hole structure of the optical splitter in this embodiment is conducive to the improvement of electrical interconnection performance and has a higher interconnection density, thereby achieving the purpose of modulating the splitting ratio of the optical splitter of the SiON waveguide material.

[0072] The manufacturing process of the modulatable optical splitter in this embodiment is as follows:

[0073] The first step is to manufacture the second metal electrode 105 by depositing the second metal electrode 105 on the silicon substrate 107 by electron beam thermal evaporation;

[0074] The second step is to prepare the SiO2 lower cladding 106, SiON waveguide 104 and SiO2 upper cladding 103. First, the SiO2 lower cladding 106 and SiON waveguide core layer are deposited by PECVD, and then the SiON waveguide 104 is prepared by photolithography and RIE (reactive ion etching technology). Finally, the SiO2 upper cladding 103 containing Li+ and capable of ion exchange is prepared by the sol-gel method.

[0075] The third step is to prepare the ion exchange region 102, deposit a mask on the surface of the SiO2 upper cladding layer 103, and prepare an ion exchange window by photolithography and wet etching processes; place the SiON planar optical waveguide device with the ion exchange window in a molten salt containing doped ions at high temperature for ion exchange;

[0076] Step 4: The first metal electrode 101 is manufactured by first removing the surface deposition mask of the SiO2 upper cladding layer 103 by a wet etching process, and then preparing a metal electrode window on the upper surface of the SiON planar optical waveguide device by a photolithography process;

[0077] Step 5: Finally, a metal thermocouple film is deposited on the upper surface of the SiON planar optical waveguide device by electron beam thermal evaporation, and the metal thermocouple film except the metal electrode window is peeled off by a lift-off process to prepare a first metal electrode 101;

[0078] Step 6: The second metal electrode 105 is exposed. A portion of the SiON planar optical waveguide device structure is removed by ICP dry etching, and the edge portion of the SiON planar optical waveguide device is retained, so that the second metal electrode 105 can be exposed and a through-hole structure is left.

[0079] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An ion exchange modulatable optical splitter based on SiON waveguide, characterized in that: It comprises a first metal electrode (101), an ion exchange region (102), a SiO2 upper cladding layer (103), a SiON waveguide (104), a second metal electrode (105), a SiO2 lower cladding layer (106) and a silicon substrate (107); The first metal electrode (101) is located on the upper surface of the ion exchange region (102); the ion exchange region (102) is located on the upper surface of the SiON waveguide (104), and the ion exchange region (102) is placed inside the SiO2 upper cladding (103); the SiON waveguide (104) is located above the silicon substrate (107), the upper surface of the SiON waveguide (104) is in contact with the lower surface of the SiO2 upper cladding (103), and the lower surface of the SiON waveguide (104) is in contact with the upper surface of the SiO2 lower cladding (106); the SiO2 lower cladding (106) is located on the upper surface of the second metal electrode (105); the second metal electrode (105) is located on the upper surface of the silicon substrate (107); The first metal electrode (101) and the second metal electrode (105) are connected to an external power source to form a capacitive electric field, thereby being able to regulate the diffusion of ions in the ion exchange region (102).

2. The SiON waveguide-based ion exchange modulatable optical splitter according to claim 1, characterized in that: The structure of the SiON waveguide (104) can be prepared into a Mach-Zehnder interferometer, a directional coupler or a Y branch.

3. The SiON waveguide-based ion exchange modulatable optical splitter according to claim 1, characterized in that: The second metal electrode (105) is prepared on the upper surface of the silicon substrate (107) by electron beam thermal evaporation process.

4. The SiON waveguide-based ion exchange modulatable optical splitter according to claim 1, characterized in that: The SiO2 upper cladding layer (103) is prepared by a sol-gel method; and the SiO2 lower cladding layer (106) is prepared by a plasma enhanced chemical vapor deposition (PEVCD) method.

5. The SiON waveguide-based ion exchange modulatable optical splitter according to claim 1, characterized in that: The first metal electrode (101) is prepared by electron beam thermal evaporation process and lift-off process (metal stripping process).

6. The SiON waveguide-based ion exchange modulatable optical splitter according to claim 1, characterized in that: The ion exchange region (102) is prepared by photolithography and wet etching processes.

7. The SiON waveguide-based ion exchange modulatable optical splitter according to claim 1, characterized in that: The first metal electrode (101) and the second metal electrode (105) are respectively bonded to a PCB (printed circuit board) by means of a probe or a lead, and the probe or the lead can be connected to any position of the metal electrode. The first metal electrode (101) is connected to the positive pole of an external power source; and the second metal electrode (105) is connected to the negative pole of an external power source.

8. Preparation process of ion exchange modulatable optical splitter based on SiON waveguide: characterized in that, The process includes the following steps: 1) manufacturing a second metal electrode (105), depositing the second metal electrode (105) on a silicon substrate (107) by electron beam thermal evaporation; 2) Fabrication of a SiO2 lower cladding layer (106), a SiON waveguide (104) and a SiO2 upper cladding layer (103), firstly depositing the SiO2 lower cladding layer (106) and the SiON waveguide (104) by PECVD, then fabricating the SiON waveguide (104) by photolithography and RIE (reactive ion etching), and finally fabricating the SiO2 upper cladding layer (103) containing Li+ and capable of ion exchange by a sol-gel method; 3) Fabrication of the ion exchange region (102), depositing a mask on the surface of the SiO2 upper cladding layer (103), and preparing an ion exchange window by photolithography and wet etching processes; placing the SiON planar optical waveguide device with the ion exchange window in a molten salt containing doped ions at high temperature for ion exchange; 4) manufacturing a first metal electrode (101), firstly removing a surface deposition mask of the SiO2 upper cladding layer (103) by a wet etching process, and secondly preparing a metal electrode window on the upper surface of the SiON planar optical waveguide device by a photolithography process; 5) finally, depositing a metal thermocouple film on the upper surface of the SiON planar optical waveguide device by electron beam thermal evaporation, and using a lift-off process to peel off the metal thermocouple film except for the metal electrode window to prepare a first metal electrode (101); 6) exposing the second metal electrode (105), removing part of the structure of the SiON planar optical waveguide device by ICP dry etching, so that the second metal electrode (105) can be exposed; In the step 6), the ICP dry method can form a planar optical waveguide structure with through holes or a planar optical waveguide structure without through holes according to different etching positions.

9. The process for preparing the ion exchange modulatable optical splitter based on SiON waveguide according to claim 8, characterized in that: The SiON planar optical waveguide device refers to an integral structure formed by an ion exchange region (102), a Li+-containing SiO2 upper cladding layer (103) capable of ion exchange, a SiON waveguide (104), a first metal electrode (101), a second metal electrode (105), a SiO2 lower cladding layer (106) and a silicon substrate (107) in an integrated manner.

10. The process for preparing an ion exchange modulatable optical splitter based on SiON waveguide according to claim 8, characterized in that: In the step 2), the SiON waveguide (104) is prepared by photolithography and RIE (reactive ion etching technology), and the structure of the SiON waveguide (104) can be prepared as a Mach-Zehnder interferometer, a directional coupler or a Y branch.

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