Equalizing Networks and Microwave Components

Abstract

The present application is applicable to the field of radio frequency circuit technology, and provides a balancing network and microwave components. The balancing network includes: a first radio frequency input port, a first radio frequency output port, a first capacitor, a second capacitor, a first T-section, a second T-section, a first microstrip line and a second microstrip line; wherein one end of the first capacitor is connected to the first radio frequency input port, and the other end is connected to the first end of the first T-section; one end of the second capacitor is connected to the second end of the first T-section, and the other end is connected to the first end of the second T-section; the third end of the first T-section is connected to the first end of the first microstrip line; the second end of the second T-section is connected to the first radio frequency output port, and the third end is connected to the first end of the second microstrip line; the second end of the first microstrip line is grounded; the second end of the second microstrip line is grounded. The balancing network provided in the present application can effectively suppress the radio frequency leakage signal caused by the PIN switch in microwave pulse modulation to avoid damage to sensitive devices.

Description

Technical Field

[0001] The present application relates to the technical field of radio frequency circuits, and in particular to a balancing network and a microwave component. Background Art

[0002] Microwave pulse modulation is used to modulate microwave signals with specific pulse width and repetition frequency required by the system. It is widely used in radar systems, microwave communication transceiver systems, biomedicine, particle accelerators, electromagnetic environment effect research, etc. PIN switches are usually used to implement microwave pulse modulation.

[0003] However, when using the PIN switch for microwave pulse modulation, direct leakage will occur on the RF main line, and this RF leakage signal is called "video leakage". Regardless of whether there is a signal injected into the RF signal input end, when the PIN switch is working normally, an RF leakage signal will be generated at the RF signal output end, and this RF leakage signal will damage the subsequent sensitive devices. Therefore, it is necessary to suppress the RF leakage signal, that is, to suppress the "video leakage". Summary of the invention

[0004] In order to overcome the problems existing in the related art, the embodiments of the present application provide a balancing network and a microwave component.

[0005] This application is implemented through the following technical solutions:

[0006] In a first aspect, an embodiment of the present application provides a balancing network, including: a first RF input port, a first RF output port, a first capacitor, a second capacitor, a first T-shaped section, a second T-shaped section, a first microstrip line, and a second microstrip line;

[0007] One end of the first capacitor is connected to the first RF input port, and the other end is connected to the first end of the first T-shaped section; one end of the second capacitor is connected to the second end of the first T-shaped section, and the other end is connected to the first end of the second T-shaped section;

[0008] The third end of the first T-shaped section is connected to the first end of the first microstrip line; the second end of the second T-shaped section is connected to the first RF output port, and the third end is connected to the first end of the second microstrip line;

[0009] The second end of the first microstrip line is grounded; the second end of the second microstrip line is grounded.

[0010] In a possible implementation manner of the first aspect, the amplitude attenuation of the equalizing network is controlled by adjusting parameters of the first capacitor, the second capacitor, the first microstrip line, and the second microstrip line.

[0011] In a possible implementation of the first aspect, the parameter of the first capacitor is the capacitance of the first capacitor, the parameter of the second capacitor is the capacitance of the second capacitor, the parameters of the first microstrip line include the length and width of the first microstrip line, and the parameters of the second microstrip line include the length and width of the second microstrip line.

[0012] In a possible implementation manner of the first aspect, the further comprising: a third microstrip line, a fourth microstrip line, a fifth microstrip line and a sixth microstrip line;

[0013] The third microstrip line is connected between the first capacitor and the first T-section, the fourth microstrip line is connected between the first T-section and the second capacitor, the fifth microstrip line is connected between the second capacitor and the second T-section, and the sixth microstrip line is connected between the second T-section and the first RF output port.

[0014] In a possible implementation manner of the first aspect, the width of the first microstrip line is the same as the width of the third end of the first T-shaped section;

[0015] The width of the second microstrip line is the same as the width of the third end of the second T-shaped section.

[0016] In a possible implementation manner of the first aspect, the width of the third microstrip line, the width of the fourth microstrip line, the width of the first end of the first T-shaped section, and the width of the second end of the first T-shaped section are the same;

[0017] The width of the fifth microstrip line, the width of the sixth microstrip line, the width of the first end of the second T-shaped section, and the width of the second end of the second T-shaped section are the same.

[0018] In a possible implementation manner of the first aspect, the present invention further includes: a first grounding hole connected to the second end of the first microstrip line;

[0019] The first microstrip line is grounded through the first grounding hole.

[0020] In a possible implementation manner of the first aspect, the further comprising: a second grounding hole connected to the second end of the second microstrip line;

[0021] The second microstrip line is grounded through the second ground hole.

[0022] In a second aspect, an embodiment of the present application provides a microwave component, comprising: a second RF input port, a second RF output port, a low noise amplifier, the equalizing network described in any one of the first aspects, a monolithic microwave integrated circuit, and a field effect transistor;

[0023] The input end of the low noise amplifier is connected to the second RF input port, the output end of the low noise amplifier is connected to the first RF input port of the equalizing network, the first RF output port of the equalizing network is connected to the input end of the monolithic microwave integrated circuit, the output end of the monolithic microwave integrated circuit is connected to the input end of the field effect tube, and the output end of the field effect tube is connected to the second RF output port.

[0024] In a possible implementation manner of the second aspect, the device further includes: a first isolator, a second isolator, and a third isolator;

[0025] The input end of the first isolator is connected to the second RF input port, and the output end of the first isolator is connected to the input end of the low noise amplifier;

[0026] The input end of the second isolator is connected to the first RF output port of the equalizing network, and the output end of the second isolator is connected to the input end of the monolithic microwave integrated circuit;

[0027] The input end of the third isolator is connected to the output end of the field effect tube, and the output end of the third isolator is connected to the second RF output port.

[0028] It can be understood that the beneficial effects of the second aspect mentioned above can be found in the relevant description of the first aspect mentioned above, and will not be repeated here.

[0029] The embodiments of the present application provide a balancing network and a microwave component, in which one end of a first capacitor of the balancing network is connected to a first RF input port, and the other end is connected to a first end of a first T-section, one end of a second capacitor is connected to a second end of the first T-section, and the other end is connected to a first end of a second T-section, a third end of the first T-section is connected to a first end of a first microstrip line, a second end of the second T-section is connected to a first RF output port, and a third end is connected to a first end of a second microstrip line, a second end of the first microstrip line is grounded, and a second end of the second microstrip line is grounded, so that RF leakage signals caused by a PIN switch in microwave pulse modulation can be effectively suppressed to avoid damage to sensitive devices.

[0030] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0032] Figure 1 is a schematic diagram of the structure of a balancing network provided in an embodiment of the present application;

[0033] Figure 2 is a schematic diagram of the structure of a balancing network provided in an embodiment of the present application;

[0034] Figure 3 is a schematic structural diagram of a microwave assembly provided in one embodiment of the present application;

[0035] Figure 4 This is a schematic diagram of the circuit gain simulation results of the microwave component without adding an equalization network;

[0036] Figure 5 is a schematic diagram of circuit gain simulation results of a microwave component provided in an embodiment of the present application;

[0037] Figure 6 This is a schematic diagram of the output spectrum of the microwave component without adding an equalization network;

[0038] Figure 7 Schematic diagram of the output spectrum of a microwave component provided in one embodiment of the present application.

[0039] Reference numerals:

[0040] RF1: first RF input port; RF2: first RF output port; C1: first capacitor; C2: second capacitor; Tee1: first T-section; Tee2: second T-section; T1: first microstrip line; T2: second microstrip line; T3: third microstrip line; T4: fourth microstrip line; T5: fifth microstrip line; T6: sixth microstrip line; D1: first grounding hole; D2: second grounding hole; 1: second RF input port; 2: second RF output port; 3: low noise amplifier; 4: equalizing network; 5: monolithic microwave integrated circuit; 6: field effect transistor. DETAILED DESCRIPTION

[0041] The present application is described more clearly below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the effects of the present application, but are not intended to limit the present application in any form. It should be noted that, for those of ordinary skill in the art, several variations and improvements may be made without departing from the concept of the present application. These all fall within the scope of protection of the present application.

[0042] It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof.

[0043] In the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

[0044] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0045] In addition, the “plurality” mentioned in the embodiments of the present application should be interpreted as two or more.

[0046] Microwave pulse modulation is used to modulate microwave signals with specific pulse width and repetition frequency required by the system. It is widely used in radar systems, microwave communication transceiver systems, biomedicine, particle accelerators, electromagnetic environment effect research, etc. PIN switches are usually used to implement microwave pulse modulation.

[0047] However, in the process of microwave pulse modulation using a PIN switch, direct leakage will be generated on the RF main line, and this RF leakage signal is called "video leakage". Regardless of whether there is a signal injection at the RF signal input end, when the PIN switch is working normally, an RF leakage signal will be generated at the RF signal output end, and this RF leakage signal will damage the sensitive devices behind it. For example, the RF leakage signal generated by the PIN switch will damage the satellite transponder behind it. Therefore, when using a PIN switch, it is necessary to suppress the RF leakage signal, that is, to suppress the "video leakage", to avoid negative impact on the sensitive devices or systems after the PIN switch.

[0048] In order to solve the above problems, an embodiment of the present application provides a balancing network, in which one end of a first capacitor of the balancing network is connected to a first RF input port, and the other end is connected to a first end of a first T-section, one end of a second capacitor is connected to a second end of the first T-section, and the other end is connected to a first end of a second T-section, a third end of the first T-section is connected to a first end of a first microstrip line, a second end of the second T-section is connected to a first RF output port, and a third end is connected to a first end of a second microstrip line, a second end of the first microstrip line is grounded, and a second end of the second microstrip line is grounded, which can effectively suppress RF leakage signals caused by PIN switches in microwave pulse modulation and avoid damage to sensitive devices.

[0049] Figure 1 Schematic diagram of the structure of the balancing network provided by an embodiment of the present application. Figure 1 As shown, the balancing network includes: a first RF input port RF1, a first RF output port RF2, a first capacitor C1, a second capacitor C2, a first T-section Tee1, a second T-section Tee2, a first microstrip line T1 and a second microstrip line T2.

[0050] One end of the first capacitor C1 is connected to the first RF input port RF1, and the other end is connected to the first end of the first T-section Tee1. One end of the second capacitor C2 is connected to the second end of the first T-section Tee1, and the other end is connected to the first end of the second T-section Tee2. The third end of the first T-section Tee1 is connected to the first end of the first microstrip line T1; the second end of the second T-section Tee2 is connected to the first RF output port RF2, and the third end is connected to the first end of the second microstrip line T2. The second end of the first microstrip line T1 is grounded; the second end of the second microstrip line T2 is grounded.

[0051] Optionally, the amplitude attenuation of the equalizing network is controlled by adjusting parameters of the first capacitor C1 , the second capacitor C2 , the first microstrip line T1 , and the second microstrip line T2 .

[0052] Among them, the parameters of the first capacitor C1 are the capacitance of the first capacitor C1, the parameters of the second capacitor C2 are the capacitance of the second capacitor C2, the parameters of the first microstrip line T1 include the length and width of the first microstrip line T1, and the parameters of the second microstrip line T2 include the length and width of the second microstrip line T2.

[0053] Specifically, the connection between the capacitor and the microstrip line can preferentially pass the microwave signal of the required specific frequency, thereby suppressing the RF leakage signal. The magnitude of the amplitude attenuation of the equalization network indicates the magnitude of the suppression effect on the RF leakage signal.

[0054] In practical applications, the PIN switch can be tested to determine the main frequency range and amplitude of the RF leakage signal caused by the PIN switch in microwave pulse modulation, and then select the relevant parameters of the first capacitor C1, the second capacitor C2, the first microstrip line T1 and the second microstrip line T2 according to the frequency range and amplitude, that is, select the capacitance of the first capacitor C1 and the second capacitor C2 and the length and width of the first microstrip line T1 and the second microstrip line T2. Among them, the length and width of the microstrip line affect the impedance value of the microstrip line.

[0055] Optionally, the first capacitor C1, the first T-section Tee1 and the first microstrip line T1 constitute a first sub-network, and the second capacitor C2, the second T-section Tee2 and the second microstrip line T2 constitute a second sub-network. In practical applications, in order to improve the suppression of radio frequency leakage signals, the number of sub-networks in the balancing network can also be selected according to actual conditions, so that the balancing network includes at least two sub-networks. For example, the number of sub-networks in the balancing network can be selected by comprehensively considering the main frequency range and amplitude of the radio frequency leakage signal caused by the PIN switch.

[0056] Exemplarily, in order to reduce the influence of loss and parasitic parameters, the first capacitor C1 and the second capacitor C2 are radio frequency capacitors.

[0057] Optionally, the first T-shaped section Tee1 is used to connect the first capacitor C1, the second capacitor C2 and the first microstrip line T1, and the second T-shaped section Tee2 is used to connect the second capacitor C2 and the second microstrip line T2.

[0058] Optionally, the width of the first microstrip line T1 is the same as the width of the third end of the first T-section Tee1; the width of the second microstrip line T2 is the same as the width of the third end of the second T-section Tee2, to ensure that microwave signals can be normally transmitted in the microstrip line and the T-section.

[0059] Specifically, in practical applications, the equalization network is arranged after the PIN switch to suppress the radio frequency leakage signal caused by the PIN switch in microwave pulse modulation.

[0060] The balancing network provided in the embodiment of the present application can effectively suppress the RF leakage signal caused by the PIN switch in microwave pulse modulation and avoid damage to sensitive devices by setting one end of the first capacitor of the balancing network to be connected to the first RF input port and the other end to the first end of the first T-section, one end of the second capacitor to be connected to the second end of the first T-section and the other end to the first end of the second T-section, the third end of the first T-section to be connected to the first end of the first microstrip line, the second end of the second T-section to be connected to the first RF output port, the third end to the first end of the second microstrip line, the second end of the first microstrip line to be grounded, and the second end of the second microstrip line to be grounded.

[0061] Optionally, in practical applications, the balancing network can be set in a microwave component, and the microwave component is set after the PIN switch, so as to achieve the suppression of the RF leakage signal caused by the PIN switch in the microwave pulse modulation by the balancing network. For the specific connection relationship between the balancing network and other components in the microwave component, please refer to the subsequent related embodiments, which will not be repeated here.

[0062] On the basis of the technical solution provided in the above embodiment, optionally, a plurality of microstrip lines may be provided to connect the capacitor and the T-junction to ensure normal transmission of the microwave signal.

[0063] Figure 2 Schematic diagram of the structure of the balancing network provided by an embodiment of the present application. Figure 2 As shown, the balancing network includes: a first RF input port RF1, a first RF output port RF2, a first capacitor C1, a second capacitor C2, a first T-section Tee1, a second T-section Tee2, a first microstrip line T1 and a second microstrip line T2.

[0064] One end of the first capacitor C1 is connected to the first RF input port RF1, and the other end is connected to the first end of the first T-section Tee1. One end of the second capacitor C2 is connected to the second end of the first T-section Tee1, and the other end is connected to the first end of the second T-section Tee2. The third end of the first T-section Tee1 is connected to the first end of the first microstrip line T1; the second end of the second T-section Tee2 is connected to the first RF output port RF2, and the third end is connected to the first end of the second microstrip line T2. The second end of the first microstrip line T1 is grounded; the second end of the second microstrip line T2 is grounded.

[0065] In addition, optionally, the above-mentioned equalization network may further include: a third microstrip line T3, a fourth microstrip line T4, a fifth microstrip line T5 and a sixth microstrip line T6.

[0066] The third microstrip line T3 is connected between the first capacitor C1 and the first T-section Tee1, the fourth microstrip line T4 is connected between the first T-section Tee1 and the second capacitor C2, the fifth microstrip line T5 is connected between the second capacitor C2 and the second T-section Tee2, and the sixth microstrip line T6 is connected between the second T-section Tee2 and the first RF output port RF2.

[0067] Specifically, the microstrip line is used to connect the capacitor and the T-junction to ensure normal transmission of microwave signals in the capacitor and the T-junction.

[0068] Optionally, the width of the third microstrip line T3, the width of the fourth microstrip line T4, the width of the first end of the first T-section Tee1, and the width of the second end of the first T-section Tee1 are all the same; the width of the fifth microstrip line T5, the width of the sixth microstrip line T6, the width of the first end of the second T-section Tee2, and the width of the second end of the second T-section Tee2 are all the same. By setting the above widths, the normal transmission of microwave signals in the microstrip lines and T-sections can be further guaranteed.

[0069] Optionally, the above-mentioned equalization network may further include: a first grounding hole D1 connected to the second end of the first microstrip line T1 and a second grounding hole D2 connected to the second end of the second microstrip line T2. The first microstrip line T1 is grounded through the first grounding hole D1, and the second microstrip line T2 is grounded through the second grounding hole D2.

[0070] In the embodiment of the present application, by setting a third microstrip line, a fourth microstrip line, a fifth microstrip line and a sixth microstrip line to connect the capacitor and the T-section, the normal transmission of the microwave signal in the capacitor and the T-section can be guaranteed. Compared with the metal waveguide, the microstrip line has a small size, light weight, wide bandwidth, high reliability and low cost.

[0071] Figure 3 Schematic diagram of the structure of a microwave assembly provided in one embodiment of the present application. Figure 3 As shown, the microwave component includes: a second radio frequency input port 1, a second radio frequency output port 2, a low noise amplifier 3, a balancing network 4, a monolithic microwave integrated circuit 5 and a field effect transistor 6.

[0072] The input end of the low noise amplifier 3 is connected to the second RF input port 1, the output end of the low noise amplifier 3 is connected to the first RF input port of the equalizing network 4, the first RF output port of the equalizing network 4 is connected to the input end of the monolithic microwave integrated circuit 5, the output end of the monolithic microwave integrated circuit 5 is connected to the input end of the field effect tube 6, and the output end of the field effect tube 6 is connected to the second RF output port 2.

[0073] The balancing network 4 may be the balancing network 4 provided in any embodiment of the present application.

[0074] Optionally, a low noise amplifier 3 (Low Noise Amplifier, LNA for short) is used to amplify and reduce noise of a weak microwave signal input from the second RF input port 1. A monolithic microwave integrated circuit 5 (Monolithic Microwave Integrated Circuit, MMIC for short) is used to further amplify the microwave signal output from the low noise amplifier 3 and provide a certain injection power to the field effect transistor 6. The field effect transistor 6 (Field Effect Transistor, FET for short) is used to further amplify the microwave signal output from the monolithic microwave integrated circuit 5, amplify it to a preset power threshold and output the microwave signal.

[0075] Specifically, since the output power of the monolithic microwave integrated circuit 5 and the field effect transistor 6 is relatively large, and the equalizing network 4 has a certain insertion loss, arranging the equalizing network 4 behind the monolithic microwave integrated circuit 5 or the field effect transistor 6 will affect the efficiency of the microwave component. Between the low noise amplifier 3 and the monolithic microwave integrated circuit 5 is a small signal linear amplification region, arranging the equalizing network 4 after the low noise amplifier 3 and before the monolithic microwave integrated circuit 5 can reduce the influence of the equalizing network 4 on the efficiency of the microwave component, that is, the influence of the equalizing network 4 on the efficiency of the microwave component can be ignored.

[0076] Optionally, the microwave component may further include: a first isolator, a second isolator and a third isolator (not shown).

[0077] The input end of the first isolator is connected to the second RF input port 1, and the output end of the first isolator is connected to the input end of the low noise amplifier 3. The input end of the second isolator is connected to the first RF output port of the equalization network 4, and the output end of the second isolator is connected to the input end of the monolithic microwave integrated circuit 5. The input end of the third isolator is connected to the output end of the field effect tube 6, and the output end of the third isolator is connected to the second RF output port 2.

[0078] The microwave component provided in the embodiment of the present application can effectively suppress the radio frequency leakage signal caused by the PIN switch in microwave pulse modulation and avoid damage to sensitive devices by setting an equalization network after the low-noise amplifier.

[0079] A simple example is that in the X-band microwave pulse modulation process, the signal source outputs a microwave signal, the microwave component modulates the microwave signal, and a PIN switch is added between the signal source and the microwave component without adding an equalizing network to modulate the microwave signal.

[0080] Figure 4 Figure 1 is a schematic diagram of the circuit gain simulation results of the microwave component without adding an equalization network. Figure 4 As shown, the horizontal axis is frequency, the vertical axis is gain, the gain of the working frequency band 9-10GHz is 16.02-16.64dB, relative to the gain of the working frequency band, the gain of the frequency band below 2.5GHz is obvious, and part of it is positive and shows an upward trend, for example, near 2.5GHz, the gain is about 15dB, and the gain of the frequency band below 1GHz is about -20--10dB. That is to say, the frequency of the required microwave signal is 9-10GHz, while the main frequency range of the RF leakage signal is in the low frequency band, and there is an obvious RF leakage signal at this time.

[0081] Figure 5 FIG. 1 is a schematic diagram of a circuit gain simulation result of a microwave component provided in an embodiment of the present application. Figure 5 As shown, the horizontal axis is frequency, the vertical axis is gain, the gain of the working frequency band 9 to 10 GHz is 16.13 to 16.59 dB, and the gain of the frequency band below 2.5 GHz becomes negative, for example, near 2.5 GHz, the gain is about -5 dB, and the gain of the frequency band below 1 GHz is about -144.93 to -75 dB. Compared with the circuit gain simulation results without adding the equalization network provided in the embodiment of the present application, the gain of the working frequency band is basically unchanged, while the gain of the low frequency band, especially the frequency band below 2.5 GHz, is significantly reduced, that is, the intensity of the microwave signal of the specific pulse width and repetition frequency required at this time is basically unchanged, and the suppression effect on the RF leakage signal is obvious.

[0082] After testing, it is shown that the equalizing network provided in the embodiment of the present application can effectively suppress the RF leakage signal caused by the PIN switch in microwave pulse modulation. That is to say, the microwave component including the equalizing network provided in the embodiment of the present application can effectively suppress the RF leakage signal caused by the PIN switch in microwave pulse modulation, thereby avoiding the RF leakage signal from causing damage to the subsequent sensitive devices.

[0083] Specifically, in the above-mentioned circuit gain simulation test, the specific parameter values ​​of the equalizing network provided in the embodiment of the present application can be: the first capacitor and the second capacitor are 0.39pF, the length of the first microstrip line and the second microstrip line are 3.3mm, and the width is 0.8mm. The width of the first end of the first T-section and the second T-section is 1.6mm, the width of the second end is 1.6mm, and the width of the third end is 0.8mm. The length of the third microstrip line, the fourth microstrip line, the fifth microstrip line and the sixth microstrip line is 2mm, and the width is 1.6mm.

[0084] Figure 6 This is a schematic diagram of the output spectrum of the microwave component without adding an equalization network. Figure 6 As shown in FIG. 1 , the output spectrum of the microwave component without adding an equalizing network shows that there are many impurities with different amplitudes around the main spectrum, that is, RF leakage signals appear around the microwave signal with the required specific pulse width and repetition frequency.

[0085] Figure 7 Schematic diagram of the output spectrum of a microwave component provided in one embodiment of the present application. Figure 7 As shown, the output spectrum of the microwave component provided in the embodiment of the present application shows that there is no obvious stray spectrum around the main spectrum, that is, no RF leakage signal appears around the microwave signal of the required specific pulse width and repetition frequency, that is, the RF leakage signal caused by the PIN switch in the microwave pulse modulation is effectively suppressed.

[0086] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A balanced network, It is characterized in that include: A first radio frequency input port, a first radio frequency output port, a first capacitor, a second capacitor, a first T-shaped section, a second T-shaped section, a first microstrip line, and a second microstrip line; One end of the first capacitor is connected to the first RF input port, and the other end is connected to the first end of the first T-shaped section; one end of the second capacitor is connected to the second end of the first T-shaped section, and the other end is connected to the first end of the second T-shaped section; The third end of the first T-shaped section is connected to the first end of the first microstrip line; the second end of the second T-shaped section is connected to the first RF output port, and the third end is connected to the first end of the second microstrip line; The second end of the first microstrip line is grounded; the second end of the second microstrip line is grounded.

2. The balancing network according to claim 1, It is characterized in that The amplitude attenuation of the equalizing network is controlled by adjusting the parameters of the first capacitor, the second capacitor, the first microstrip line and the second microstrip line.

3. The balancing network according to claim 2, It is characterized in that The parameter of the first capacitor is the capacitance of the first capacitor, the parameter of the second capacitor is the capacitance of the second capacitor, the parameters of the first microstrip line include the length and width of the first microstrip line, and the parameters of the second microstrip line include the length and width of the second microstrip line.

4. The balancing network according to claim 1, It is characterized in that Also includes: a third microstrip line, a fourth microstrip line, a fifth microstrip line, and a sixth microstrip line; The third microstrip line is connected between the first capacitor and the first T-section, the fourth microstrip line is connected between the first T-section and the second capacitor, the fifth microstrip line is connected between the second capacitor and the second T-section, and the sixth microstrip line is connected between the second T-section and the first RF output port.

5. The balancing network according to claim 1, It is characterized in that The width of the first microstrip line is the same as the width of the third end of the first T-shaped section; The width of the second microstrip line is the same as the width of the third end of the second T-shaped section.

6. The balancing network according to claim 4, It is characterized in that The width of the third microstrip line, the width of the fourth microstrip line, the width of the first end of the first T-shaped section and the width of the second end of the first T-shaped section are the same; The width of the fifth microstrip line, the width of the sixth microstrip line, the width of the first end of the second T-shaped section, and the width of the second end of the second T-shaped section are the same.

7. The balancing network according to claim 1, It is characterized in that Also includes: a first grounding hole connected to the second end of the first microstrip line; The first microstrip line is grounded through the first grounding hole.

8. The balancing network according to claim 1, It is characterized in that Also includes: a second grounding hole connected to the second end of the second microstrip line; The second microstrip line is grounded through the second ground hole.

9. A microwave component, It is characterized in that include: A second RF input port, a second RF output port, a low noise amplifier, an equalizing network according to any one of claims 1 to 8, a monolithic microwave integrated circuit and a field effect transistor; The input end of the low noise amplifier is connected to the second RF input port, the output end of the low noise amplifier is connected to the first RF input port of the equalizing network, the first RF output port of the equalizing network is connected to the input end of the monolithic microwave integrated circuit, the output end of the monolithic microwave integrated circuit is connected to the input end of the field effect tube, and the output end of the field effect tube is connected to the second RF output port.

10. The microwave assembly according to claim 9, It is characterized in that Also includes: A first isolator, a second isolator and a third isolator; The input end of the first isolator is connected to the second RF input port, and the output end of the first isolator is connected to the input end of the low noise amplifier; The input end of the second isolator is connected to the first RF output port of the equalizing network, and the output end of the second isolator is connected to the input end of the monolithic microwave integrated circuit; The input end of the third isolator is connected to the output end of the field effect tube, and the output end of the third isolator is connected to the second RF output port.

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