Array substrate, flat panel detector and manufacturing method of array substrate

Abstract

The application provides an array substrate, a flat panel detector and a manufacturing method of the array substrate. The array substrate comprises a substrate, and the array substrate comprises a display area and a detection area. The detection area comprises a thin film transistor on the substrate, and a photodiode on a side of the thin film transistor away from the substrate. The array substrate further comprises a first inorganic protective layer, an organic protective layer and a second inorganic protective layer between the thin film transistor and the photodiode. The first inorganic protective layer, the organic protective layer and the second inorganic protective layer are sequentially stacked in a direction away from the substrate. A normal projection of the photodiode on the substrate is within a range of a normal projection of the organic protective layer on the substrate. According to the embodiment of the application, the organic protective layer covering the semiconductor layer can block the possibility of hydrogen diffusion to the semiconductor layer during the manufacturing process of the photodiode, which helps to improve the reliability of the array substrate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of detection, and in particular to an array substrate, a flat panel detector and a manufacturing method of the array substrate. BACKGROUND

[0002] An array substrate can be provided with a photodiode as a light sensor to achieve detection of brightness. Such an array substrate is applied to a display device to detect ambient brightness and compensate for display effects. The array substrate can also be applied to a flat panel detector for X-ray detection and other medical equipment. In the process of manufacturing a photodiode, deposition of hydrogenated silicon or a gas atmosphere of hydrogen gas, also known as a hydrogen environment, is usually required. Under a hydrogen environment for a long time, the semiconductor layer of a thin film transistor on the array substrate can be affected, which affects the performance of the array substrate. SUMMARY

[0003] Embodiments of the present application provide an array substrate, a flat panel detector and a manufacturing method of the array substrate to solve the problem that the semiconductor layer can be affected under a hydrogen environment for manufacturing a photodiode, which affects the performance of the array substrate.

[0004] In a first aspect, an embodiment of the present application provides an array substrate, comprising a substrate, the array substrate comprising a display area and a detection area, the detection area comprising a thin film transistor on the substrate, and a photodiode on a side of the thin film transistor away from the substrate, the array substrate further comprising a first inorganic protective layer, an organic protective layer and a second inorganic protective layer between the thin film transistor and the photodiode, the first inorganic protective layer, the organic protective layer and the second inorganic protective layer being sequentially stacked in a direction away from the substrate, and a projection of the photodiode on the substrate being within a projection of the organic protective layer on the substrate.

[0005] Optionally, the thin film transistor comprises a first thin film transistor, the first thin film transistor comprising a first source-drain metal layer, the array substrate further comprising a second source-drain metal layer, the second source-drain metal layer being on a side of the first source-drain metal layer away from the substrate and connected to the first source-drain metal layer, and a projection of the photodiode on the substrate being within a projection of the second source-drain metal layer on the substrate.

[0006] Optionally, in a first direction, an edge of a projection of the organic protective layer on the substrate is between an edge of a projection of the first source-drain metal layer on the substrate and an edge of a projection of the second source-drain metal layer on the substrate, and the projection of the second source-drain metal layer on the substrate covers the projection of the first source-drain metal layer on the substrate.

[0007] The first direction is a direction of a width of the organic protective layer.

[0008] Optionally, a transparent conductive layer is further included on a side of the photodiode away from the substrate, and the transparent conductive layer is connected to the photodiode.

[0009] In the second direction, an edge of a normal projection of the organic protective layer on the substrate is located between an edge of a normal projection of the first source-drain metal layer on the substrate and an edge of a normal projection of the transparent conductive layer on the substrate.

[0010] The second direction is a direction of a length of the organic protective layer.

[0011] Optionally, a material of the organic protective layer includes a photoresist hydrogen-stable material, and a solidification temperature of the photoresist hydrogen-stable material is not greater than 260 degrees Celsius.

[0012] Optionally, the first thin film transistor includes a semiconductor layer, and a normal projection of the second source-drain metal layer on the substrate covers at least part of a normal projection of the semiconductor layer on the substrate.

[0013] Optionally, a normal projection of the first inorganic protective layer on the substrate and a normal projection of the second inorganic protective layer on the substrate overlap.

[0014] Optionally, a light-blocking layer and a buffer layer are further included between the thin film transistor and the substrate, the buffer layer is located on a side of the light-blocking layer away from the substrate, the light-blocking layer includes a plurality of mutually independent light-blocking layer patterns, a normal projection of each of the light-blocking layer patterns on the substrate covers a normal projection of a semiconductor layer of one of the thin film transistors on the substrate, and the thin film transistor further includes a second thin film transistor, and a semiconductor layer or a gate layer of the second thin film transistor is connected to a corresponding light-blocking layer pattern.

[0015] In a second aspect, an embodiment of the present application further provides a flat panel detector, including the array substrate according to any one of the first aspect.

[0016] In a third aspect, an embodiment of the present application further provides a manufacturing method of an array substrate, used for manufacturing the array substrate according to any one of the first aspect, and including the following steps:

[0017] A substrate is provided;

[0018] A thin film transistor is manufactured on the substrate;

[0019] A first inorganic protective layer, an organic protective layer and a second inorganic protective layer are sequentially and layerwisely manufactured on a side of the thin film transistor away from the substrate in a direction away from the substrate.

[0020] A photodiode is made on the side of the second inorganic protective layer away from the substrate, and the orthographic projection of the photodiode on the substrate is within the orthographic projection range of the organic protective layer on the substrate.

[0021] Optionally, the thin film transistor is made with a first inorganic protective layer, an organic protective layer and a second inorganic protective layer stacked in sequence away from the substrate, comprising:

[0022] A first inorganic material layer is deposited on the side of the thin film transistor away from the substrate;

[0023] An organic protective layer is made on the side of the first inorganic material layer away from the substrate;

[0024] A second inorganic material layer is deposited on the side of the organic protective layer away from the substrate;

[0025] The first inorganic material layer and the second inorganic material layer are patterned by a one-time patterning process, wherein the patterned first inorganic material layer forms a first inorganic protective layer, and the patterned second inorganic material layer forms a second inorganic protective layer.

[0026] The embodiment of the present application can block the possibility of hydrogen diffusion to the semiconductor layer during the process of making a photodiode by making an organic protective layer covering the semiconductor layer, and further, by setting a second inorganic protective layer and arranging the organic protective layer between the first inorganic protective layer and the second inorganic protective layer, the material of the organic protective layer can be prevented from polluting the photodiode during the process of making the photodiode, which helps to improve the reliability of the array substrate. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the description of the embodiments of the present application will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0028] Figure 1 is a structure schematic diagram of an array substrate provided by an embodiment of the present application;

[0029] Figure 2 is a structure schematic diagram of another array substrate provided by an embodiment of the present application. DETAILED DESCRIPTION

[0030] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts are within the scope of the present application.

[0031] The array substrate is provided by the embodiments of the present application.

[0032] In the embodiments, the array substrate comprises a substrate 101. The substrate 101 can be a glass substrate or a flexible substrate such as a polyimide (PI) substrate.

[0033] As shown in Figure 1 and Figure 2 , in one embodiment, the array substrate comprises a display area and a detection area. The display area is used to realize normal display function. The detection area comprises a thin film transistor on the substrate 101 and a photodiode 114 on the side of the thin film transistor away from the substrate 101. The photodiode 114 can be a PIN photodiode 114. The PIN photodiode comprises a P-I-N structure composed of a P-type semiconductor layer 1411, an intrinsic semiconductor layer 1412 and an N-type semiconductor layer 1413 which are stacked in sequence. No further limitation and description is made herein.

[0034] In some embodiments, the array substrate can be applied to a display device to perform brightness detection. For example, the display brightness and the ambient brightness can be detected, and the display device can be further compensated.

[0035] As shown in Figure 1 and Figure 2 , in some other embodiments, the array substrate can be applied to an X-ray detection device.

[0036] Please continue to refer to Figure 1 and Figure 2 . Exemplarily, the array substrate comprises a substrate 101, a light shielding layer 102, a buffer layer 103, a semiconductor layer 104 (an active layer), a gate insulating layer 105, a gate layer 106, a first source-drain metal layer 107, a dielectric layer 108, a first inorganic protective layer 109, an organic protective layer 110, a second inorganic protective layer 111, a second source-drain metal layer 112, a third inorganic protective layer 113, a photodiode 114, a transparent conductive layer 115, a resin layer 116 and a common electrode layer 117.

[0037] The display region includes pixel units, and each pixel unit includes sub-pixels of different colors, for example, a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. The sub-pixels of different colors can be implemented by light-emitting units of corresponding colors, or can be implemented by light-emitting units in cooperation with color filters. The light-emitting unit is composed of a driving electrode 121, a light-emitting layer 122, and a common electrode layer 117.

[0038] The detection region further includes a scintillator 118, a pixel definition layer 119, and an insulating layer 120. Further, a cover plate 123 can be arranged on the side of the scintillator 118 away from the substrate 101.

[0039] The X-ray detection device can detect X-rays by an indirect conversion method. The indirect conversion method refers to receiving X-rays emitted by an object by using a scintillator 118. The scintillator 118 includes a fluorescent agent, and the material of the fluorescent agent can include gadolinium sulfide (Gd2O2S) or the like. In the working process, when X-rays irradiate the scintillator 118, the scintillator 118 can generate visible light, thereby converting the X-rays into light signals. Then, the converted light is detected by a photodiode 114. Each photodiode 114 is located in each pixel under the scintillator 118 with a spacing of 50-150 um. The photodiode 114 converts the light emitted by the scintillator 118 into electric charges. Further, the electric charges are transmitted as voltage signals through a thin film transistor. Finally, a two-dimensional image is generated according to the obtained voltage signals.

[0040] In this embodiment, the array substrate further includes a first inorganic protective layer 109 (PVX1), an organic protective layer 110, and a second inorganic protective layer 111 (PVX2) between the thin film transistor and the photodiode 114. The first inorganic protective layer 109, the organic protective layer 110, and the second inorganic protective layer 111 are sequentially stacked in a direction away from the substrate 101. The orthographic projection of the photodiode 114 on the substrate 101 is located within the orthographic projection of the organic protective layer 110 on the substrate 101.

[0041] In the process of manufacturing the photodiode 114, the deposition of the material needs to be carried out in a hydrogen atmosphere or hydrogen environment. The semiconductor layer 104 of the thin film transistor usually includes a metal oxide, for example, indium gallium zinc oxide (IGZO). The metal oxide has a relatively high mobility, and is therefore more suitable as a material for the semiconductor layer 104. Under a long-time hydrogen atmosphere, the semiconductor of the metal oxide is easily conductorized, which affects its normal function.

[0042] In the embodiment, the organic protective layer 110 is arranged between the photodiode 114 and the thin film transistor, so that the possibility of diffusion of hydrogen to the semiconductor layer 104 during the deposition of the photodiode 114 is reduced by the organic protective layer 110, thereby improving the reliability of the thin film transistor on the array substrate.

[0043] In the embodiment, the organic protective layer 110 is arranged between the photodiode 114 and the thin film transistor, so that the possibility of diffusion of hydrogen to the semiconductor layer 104 during the deposition of the photodiode 114 is reduced by the organic protective layer 110, thereby improving the reliability of the thin film transistor on the array substrate.

[0044] In some embodiments, the thin film transistor includes a first thin film transistor, and the first thin film transistor includes the first source-drain metal layer 107. The array substrate further includes a second source-drain metal layer 112, which is located on the side of the first source-drain metal layer 107 away from the substrate 101 and is connected to the first source-drain metal layer 107. The orthographic projection of the photodiode 114 on the substrate 101 is located within the orthographic projection of the second source-drain metal layer 112 on the substrate 101.

[0045] In the embodiment, the first thin film transistor is used to transmit the electrical signal generated by the corresponding photodiode 114. During the operation, the photodiode 114 generates an electrical signal by sensing light, and the electrical signal is transmitted to the corresponding first thin film transistor through the transparent conductive layer 115. When the first thin film transistor is turned on, the electrical signal can be transmitted to the second source-drain metal layer 112 through the first thin film transistor, and then output through the second source-drain metal layer 112.

[0046] In some embodiments, the minimum distance between the edge of the orthographic projection of the photodiode 114 on the substrate 101 and the edge of the orthographic projection of the second source-drain metal layer 112 on the substrate 101 is not less than 7 microns. In the embodiment, the relative positions of the orthographic projection of the photodiode 114 and the orthographic projection of the second source-drain metal layer 112 are controlled, so that the influence of ambient light on the photodiode 114 is reduced, the signal-to-noise ratio is improved, and the accuracy of the detection result is improved.

[0047] In some embodiments, the edge of the orthogonal projection of the organic protective layer 110 on the substrate 101 in the first direction is between the edge of the orthogonal projection of the first source-drain metal layer 107 on the substrate 101 and the edge of the orthogonal projection of the second source-drain metal layer 112 on the substrate 101, and the orthogonal projection of the second source-drain metal layer 112 on the substrate 101 covers the orthogonal projection of the first source-drain metal layer 107 on the substrate 101.

[0048] In some embodiments, a transparent conductive layer 115 is further included on the side of the photodiode 114 away from the substrate 101, and the transparent conductive layer 115 is connected to the photodiode 114; the edge of the orthogonal projection of the organic protective layer 110 on the substrate 101 in the second direction is between the edge of the orthogonal projection of the first source-drain metal layer 107 on the substrate 101 and the edge of the orthogonal projection of the transparent conductive layer 115 on the substrate 101.

[0049] In the present embodiment, the first direction is the width direction of the organic protective layer 110, and the second direction is the length direction of the organic protective layer 110. By controlling the relative positions of the organic protective layer 110 and the photodiode 114, the dark current can be reduced without affecting the photocurrent, which helps to further improve the detection accuracy.

[0050] In some embodiments, the material of the organic protective layer 110 includes a light-resistant hydrogen-blocking material. In the present embodiment, the light-resistant hydrogen-blocking effect can be achieved through the interaction of organic substances. Specifically, the hydrogen-blocking additive can be an organic substance, which can achieve the hydrogen-blocking effect through the interaction or reaction between organic substances. The specific substance type can be flexibly selected according to actual needs. For example, a polyimide material with a certain degree of polymerization can be selected, and an existing or improved hydrogen-blocking additive can be further added to form a light-resistant hydrogen-blocking material.

[0051] The curing temperature of the light-resistant hydrogen-blocking material is not greater than 260 degrees Celsius. For example, it can be controlled at 180 to 230 degrees Celsius. In this way, the curing temperature of the organic protective layer 110 is relatively low, which can avoid the impact of high-temperature processes on the thin-film transistor. The decomposition temperature of the selected light-resistant hydrogen-blocking material needs to be relatively high. In the present embodiment, it is specifically not less than 450 degrees Celsius, so as to avoid decomposition of the light-resistant hydrogen-blocking material at high temperatures during the manufacture of the photodiode 114.

[0052] In the present embodiment, the curing temperature and the decomposition temperature of the light-resistant hydrogen-blocking material can be achieved through the cooperation between organic substances. For example, the polymerization degree of the polyimide material can be controlled to meet the above temperature requirements.

[0053] The photosensitive agent can be selected from a double azide photosensitive agent, a cinnamic acid photosensitive agent, and a polyhydrocarbon photosensitive agent. The photosensitive agent is mainly used to increase the opacity of the organic protective layer 110 under light conditions. It should be understood that the material of the active layer of the thin film transistor includes a semiconductor, and the electrical properties of the semiconductor are easily affected by light. By adding the photosensitive agent to the organic protective layer 110, the influence of the light of the photodiode 114 on the performance of the thin film transistor can be reduced.

[0054] In some embodiments, the first thin film transistor includes the semiconductor layer 104, and the orthographic projection of the second source-drain metal layer 112 on the substrate 101 covers at least part of the orthographic projection of the semiconductor layer 104 on the substrate 101. By controlling the second source-drain metal layer 112 to cover the semiconductor layer 104 to a certain extent, the diffusion of hydrogen to the semiconductor layer 104 of the first thin film transistor can be prevented by the second source-drain metal layer 112, and the protection effect of the semiconductor layer 104 of the target transistor can be improved.

[0055] In some embodiments, the orthographic projection of the first inorganic protective layer 109 on the substrate 101 and the orthographic projection of the second inorganic protective layer 111 on the substrate 101 overlap.

[0056] In the present embodiment, the first inorganic protective layer 109 is mainly used to protect the thin film transistor, and the second inorganic protective layer 111 is mainly used to protect the photodiode 114. It should be understood that the photodiode 114 can include a dry etching step in the manufacturing process, and the dry etching process can cause over-etching, which can cause the material of the organic protective layer 110 to contaminate the sidewall of the photodiode 114.

[0057] By arranging the second inorganic protective layer 111, the material of the organic protective layer 110 can be prevented from contaminating the photodiode 114 in the subsequent manufacturing process of the photodiode 114. At the same time, by arranging the orthographic projection of the first inorganic protective layer 109 on the substrate 101 and the orthographic projection of the second inorganic protective layer 111 on the substrate 101 to overlap, the first inorganic protective layer 109 and the second inorganic protective layer 111 can be manufactured at the same time by one-time patterning, which can help to save process steps and reduce costs.

[0058] In some of the embodiments, a light shielding layer 102 and a buffer layer 103 are further included between the thin film transistor and the substrate 101, the buffer layer 103 is located on the side of the light shielding layer 102 away from the substrate 101, the light shielding layer 102 includes a plurality of mutually independent light shielding layer 102 patterns, the orthographic projection of each light shielding layer 102 pattern on the substrate 101 covers the orthographic projection of the semiconductor layer 104 of a thin film transistor on the substrate 101, and the thin film transistor further includes a second thin film transistor, the semiconductor layer 104 or the gate layer 106 of the second thin film transistor is connected with the corresponding light shielding layer 102 pattern.

[0059] The light shielding layer 102 is mainly used for shielding the light that may irradiate to the thin film transistor, and is helpful to improve the stability of the thin film transistor.

[0060] The second thin film transistor in the embodiment refers to the thin film transistor used for driving the pixel unit to realize the display function. In this way, the semiconductor layer 104 or the gate layer 106 of the second thin film transistor is connected with the corresponding light shielding layer 102 pattern, and the light shielding layer 102 and the second thin film transistor jointly constitute a double-gate structure thin film transistor, which is helpful to improve the driving control effect for the display process.

[0061] The embodiment of the present application further provides a flat panel detector including the array substrate in any of the above.

[0062] The flat panel detector of the embodiment of the present application includes all the technical solutions of the array substrate embodiment described above, and thus can at least realize all the technical effects described above, which will not be repeated here.

[0063] The embodiment of the present application further provides a manufacturing method of an array substrate.

[0064] The method is used for the array substrate in any of the above, and in one embodiment, the manufacturing method of the array substrate includes the following steps.

[0065] A substrate 101 is provided;

[0066] A thin film transistor is manufactured on the substrate 101;

[0067] A first inorganic protective layer, an organic protective layer and a second inorganic protective layer are sequentially stacked on the side of the thin film transistor away from the substrate 101;

[0068] A photodiode is manufactured on the side of the second inorganic protective layer away from the substrate 101, and the orthographic projection of the photodiode on the substrate 101 is located within the orthographic projection of the organic protective layer on the substrate 101.

[0069] In the technical scheme of the embodiment, the array substrate is any one of the array substrates in the array substrate embodiments, which will not be repeated here.

[0070] In some embodiments, before the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are sequentially stacked and arranged in the direction away from the substrate on the side of the thin film transistor away from the substrate, the method further comprises:

[0071] A dielectric layer is made on the side of the thin film transistor away from the substrate.

[0072] In the embodiment, the material of the dielectric layer is first deposited and then patterned to form the dielectric layer. In the embodiment, during the deposition of the material of the dielectric layer, the deposition power is 1300-1800 W, the deposition pressure is 1800-2400 mTorr, and the deposition time is 220-280 seconds.

[0073] In the technical scheme of the embodiment, the deposition power and the deposition pressure are significantly increased, and the deposition time is prolonged, so that a relatively dense and relatively thick dielectric layer can be formed, which helps to improve the hydrogen blocking capability.

[0074] In some embodiments, the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are sequentially stacked and arranged in the direction away from the substrate on the side of the thin film transistor away from the substrate, which comprises:

[0075] A first inorganic material layer is deposited on the side of the thin film transistor away from the substrate.

[0076] An organic protective layer is made on the side of the first inorganic material layer away from the substrate.

[0077] A second inorganic material layer is deposited on the side of the organic protective layer away from the substrate.

[0078] The first inorganic material layer and the second inorganic material layer are patterned by a one-time patterning process, wherein the patterned first inorganic material layer forms the first inorganic protective layer, and the patterned second inorganic material layer forms the second inorganic material layer.

[0079] It should be understood that in the technical scheme of the embodiment, the first protective layer is mainly used to protect the thin film transistor, and the second protective layer is mainly used to form a protection for the organic protective layer. Therefore, in the embodiment, it can be understood that in the embodiment, the first inorganic material layer forms the first inorganic protective layer, and the second inorganic material layer forms the second inorganic material layer by a one-time patterning process, so as to save the process steps.

[0080] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of the changes or replacements within the technical range disclosed by the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An array substrate, characterized by, The array substrate comprises a substrate, a display area and a detection area, the detection area comprises a thin film transistor on the substrate and a photodiode on a side of the thin film transistor away from the substrate, the array substrate further comprises a first inorganic protective layer, an organic protective layer and a second inorganic protective layer between the thin film transistor and the photodiode, the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are sequentially stacked in a direction away from the substrate, a projection of the photodiode on the substrate is within a projection of the organic protective layer on the substrate, The thin film transistor comprises a first thin film transistor, the first thin film transistor comprises a first source-drain metal layer, the array substrate further comprises a second source-drain metal layer, and the second inorganic protective layer is between the organic protective layer and the second source-drain metal layer. The material of the organic protective layer comprises a photoresist hydrogen-stable material, and a curing temperature of the photoresist hydrogen-stable material is not greater than 260 degrees Celsius.

2. The array substrate of claim 1, wherein, The second source-drain metal layer is on a side of the first source-drain metal layer away from the substrate and connected with the first source-drain metal layer, and a projection of the photodiode on the substrate is within a projection of the second source-drain metal layer on the substrate.

3. The array substrate of claim 2, wherein, In a first direction, an edge of a projection of the organic protective layer on the substrate is between an edge of a projection of the first source-drain metal layer on the substrate and an edge of a projection of the second source-drain metal layer on the substrate, wherein the projection of the second source-drain metal layer on the substrate covers the projection of the first source-drain metal layer on the substrate. The first direction is a width direction of the organic protective layer.

4. The array substrate of claim 3, wherein, The array substrate further comprises a transparent conductive layer on a side of the photodiode away from the substrate, and the transparent conductive layer is connected with the photodiode. In a second direction, an edge of a projection of the organic protective layer on the substrate is between an edge of a projection of the first source-drain metal layer on the substrate and an edge of a projection of the transparent conductive layer on the substrate. The second direction is a length direction of the organic protective layer.

5. The array substrate of claim 2, wherein, The first thin film transistor comprises a semiconductor layer, and a projection of the second source-drain metal layer on the substrate covers at least part of a projection of the semiconductor layer on the substrate.

6. The array substrate according to any one of claims 1 to 4, wherein, A projection of the first inorganic protective layer on the substrate and a projection of the second inorganic protective layer on the substrate overlap.

7. The array substrate according to any one of claims 1 to 4, wherein, The array substrate further comprises a light-blocking layer and a buffer layer between the thin film transistor and the substrate, the buffer layer is on a side of the light-blocking layer away from the substrate, the light-blocking layer comprises a plurality of mutually independent light-blocking layer patterns, a projection of each light-blocking layer pattern on the substrate covers a projection of a semiconductor layer of a thin film transistor on the substrate, the thin film transistor further comprises a second thin film transistor, and a semiconductor layer or a gate layer of the second thin film transistor is connected with a corresponding light-blocking layer pattern.

8. A flat panel detector, characterized by, The array substrate comprises the array substrate of any one of claims 1 to 7.

9. A manufacturing method of an array substrate, for manufacturing the array substrate according to any one of claims 1 to 7, characterized by, The array substrate comprises the following steps: Providing a substrate; Fabricating a thin film transistor on the substrate; Fabricating a first inorganic protective layer, an organic protective layer and a second inorganic protective layer in sequence on a side of the thin film transistor away from the substrate; Fabricating a photodiode on a side of the second inorganic protective layer away from the substrate, a projection of the photodiode on the substrate being within a projection of the organic protective layer on the substrate.

10. The method of claim 9, wherein, The thin film transistor away from the substrate side is fabricated in sequence along the direction away from the substrate first inorganic protective layer, organic protective layer and second inorganic protective layer, comprising: Depositing a first inorganic material layer on a side of the thin film transistor away from the substrate; Fabricating an organic protective layer on a side of the first inorganic material layer away from the substrate; Depositing a second inorganic material layer on a side of the organic protective layer away from the substrate; The first inorganic material layer and the second inorganic material layer are patterned by a one-time patterning process, wherein the patterned first inorganic material layer forms a first inorganic protective layer, and the patterned second inorganic material layer forms a second inorganic material layer.

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