Coil Device and Manufacturing Method

Abstract

A novel coil device is provided. The coil device includes: a support; an insulating bonding layer disposed on the support; and a conductive coil, a part of the conductive coil entering the bonding layer.

Description

[0001] This application is a divisional application of the application with the application number 201980024372.9, the application date of March 4, 2019, and the invention title of "Coil Device and Manufacturing Method". Technical Field

[0002] The present invention relates to a coil device. Background Art

[0003] Coil devices are used in various electrical products.

[0004] Japanese Patent No. 6102578 proposes a coil device (refer to Figure 10 ). In Figure 10 , 13S represents a substantially spiral pattern, 13e is the outer peripheral end of the substantially spiral pattern 13S, and 19 is a wiring pattern.

[0005] The above coil device is manufactured in the following manner (refer to Figure 11 ). A base metal film 11 is formed on the surface of a substrate 10 (refer to Figure 11 (a)). A photoresist film 12 is coated on the base metal film 11. The photoresist film 12 is formed into a predetermined pattern by photolithography and dry etching (refer to Figure 11 (b)). A coating film is provided by electroplating on the base metal film 11 at the opening position of the photoresist film 12 (refer to Figure 11 (c)). The photoresist film 12 is removed (refer to Figure 11 (d)). The base metal film 11 at the position where the photoresist film 12 is located is removed (refer to Figure 11 (e)). Further electroplating is performed to obtain a coil (coating film 13) having a high aspect ratio and a substantially spiral shape (refer to Figure 10 , Figure 11 (f)).

[0006] It is also possible to obtain the Figure 12 coil device according to the method of Figure 10 . A coating film 13 is formed on the surface of the substrate 10 (refer to Figure 12 (a)). W L1 is the line width, and W S1 is the space width. Next, a low current is applied in the plating solution 21. As a result, the coating film 13 grows isotropically. The coating film 13 grows longitudinally and laterally and becomes a cross-sectional shape with an upper bend. This plating process is performed until the space width is W S2 (W S1 >W S2 >0), and the line width is W L2 (W L2 >W L1 ) (refer toFigure 12 in (b) and (c) thereof. The coating film at this stage is denoted by reference numeral 14. The thickness T2 of the coating film 14 is more than twice the above-mentioned interval width W S2 Next, in the plating solution 21, a potential higher than that during the above-mentioned plating is applied. As a result, a metal ion thin layer 17 (thickness W0) having a thickness of a certain level or more is formed on the surface of the coating film 14 in contact with the plating solution 21 (see Figure 12 in (d) thereof). The plating solution 21 is stirred (see Figure 12 in (e) thereof). The metal ion thin layer 17 (substantially an insulating layer) covers the entire coating film 14. The metal ion thin layer 17 is partially removed by stirring. Since metal ions are supplied to the removed portion, the plating grows in one direction. The coating film 14 grows into a coating film 15 having a high height (height T3) (see Figure 12 in (f) thereof).

[0007] Patent Document 1: Japanese Patent No. 6102578 Summary of the Invention

[0008] However, the coil height of the above-described coil device varies depending on the position, for example. For example, the height of the wire at the outermost peripheral position of the coil is higher than the height of the wire at the inner peripheral side position of the coil. Therefore, the coil characteristics are poor.

[0009] The problem to be solved by the present invention is to provide a novel coil device.

[0010] The present invention provides a coil device including:

[0011] a support;

[0012] an insulating bonding layer provided on the support; and

[0013] a conductive coil, a part of which enters the bonding layer.

[0014] The coil device of the present invention further includes an insulating material provided between the wires of the conductive coil.

[0015] In the coil device of the present invention, the width of the end portion of the wire of the conductive coil on the bonding layer side is narrower than the width of the end portion on the opposite side of the bonding layer.

[0016] In the coil device of the present invention, the end portion of the wire of the conductive coil on the bonding layer side has a substantially curved cross-sectional shape.

[0017] In the coil device of the present invention, the thickness of the bonding layer is 7 to 50 μm.

[0018] The coil device of the present invention uses one or more selected from the group of thermosetting resins and photocurable resins as the material for the bonding layer.

[0019] The coil device of the present invention uses one or more selected from the group of thermosetting resins and photocurable resins as the material for the insulating material.

[0020] In the coil device of the present invention, the coil is substantially spiral or substantially helical.

[0021] In the coil device of the present invention, the thickness of the wire of the coil is 30 to 600 μm, and the closest distance between wires is 5 to 20 μm.

[0022] In the coil device of the present invention, the support, the bonding layer, and the conductive coil are single-layer or laminated two or more layers.

[0023] The present invention provides a method for manufacturing a coil device, which transfers a conductive coil provided on a first support to the bonding layer of a second support having a bonding layer.

[0024] The present invention provides a method for manufacturing a coil device, comprising:

[0025] Step A, providing a conductive coil on a first support;

[0026] Step B, providing a bonding layer on a second support; and

[0027] Step C, transferring the coil to the bonding layer.

[0028] In the method for manufacturing a coil device of the present invention, after the transfer or during the transfer, the first support is peeled off.

[0029] In the method for manufacturing a coil device of the present invention, an insulating material is filled between the wires of the conductive coil.

[0030] The method for manufacturing a coil device of the present invention further includes: a groove forming step of forming a groove on the surface of the first support; and a plating step of performing metal plating on the groove and providing the coil on the metal plating.

[0031] In the manufacturing method of the present invention, at least the surface layer of the first support is metal, a photoresist film is provided on the metal surface, a groove connected to the metal surface is formed in the photoresist film, metal plating is performed on the groove, and the coil is provided on the metal plating.

[0032] In the method for manufacturing a coil device of the present invention, the coil is formed by anisotropic plating.

[0033] The manufacturing method of the coil device of the present invention, in the transfer, the head end of the wire of the coil enters the bonding layer.

[0034] The manufacturing method of the coil device of the present invention, the width of the groove is narrower than the width of the wire of the coil.

[0035] The manufacturing method of the coil device of the present invention, the metal type of the metal plating provided in the groove is different from the metal type of the coil.

[0036] The present invention can obtain a novel coil device. Description of the Drawings

[0037] Figure 1 It is a diagram of the manufacturing process of the coil device of the present invention.

[0038] Figure 2 It is a diagram of the manufacturing process of the coil device of the present invention.

[0039] Figure 3 It is a diagram of the manufacturing process of the coil device of the present invention.

[0040] Figure 4 It is a diagram of the manufacturing process of the coil device of the present invention.

[0041] Figure 5 It is a diagram of the manufacturing process of the coil device of the present invention.

[0042] Figure 6 It is a diagram of the manufacturing process of the coil device of the present invention.

[0043] Figure 7 It is a diagram of the manufacturing process of the coil device of the present invention.

[0044] Figure 8 It is a diagram of the manufacturing process of the coil device of the present invention.

[0045] Figure 9 It is a cross-sectional view of the double-layer stacked coil device of the present invention.

[0046] Figure 10 It is a top view of a conventional coil device.

[0047] Figure 11 It is a manufacturing process diagram of a conventional coil device.

[0048] Figure 12 It is a manufacturing process diagram of a conventional coil device. Detailed Description of the Invention

[0049] Hereinafter, embodiments of the present invention will be described.

[0050] The first invention is a coil device. The device has a support. The support is generally made of an insulating material. Of course, a conductive material can also be used in part. The use of a conductive material is not excluded. That is, as long as it is electrically insulated from the conductive coil described later. An insulating bonding layer described later is provided on the support. Therefore, since there is a bonding layer (insulating) between the conductive coil and the support, the condition that the support must be made of an insulating material is relaxed. Of course, since the thickness of the bonding layer can also be thin, the support is preferably made of an insulating material. Since there is no specific reason to use a conductive material, the support is generally insulating. The device has a bonding layer. The bonding layer is made of an insulating material and does not have conductivity. If the bonding layer is made of a conductive material, the wires of the coil will be short-circuited by the bonding layer. Therefore, the bonding layer is insulating. The bonding layer is provided on the surface of the support. The bonding layer is formed by coating a bonding agent. Or, it can be formed by pasting a bonding film. The bonding agent is used in the concept of including an adhesive. Therefore, a bonding layer is also included in the bonding layer. The device has a conductive coil (hereinafter also referred to as a coil). A part of the wire of the coil enters the bonding layer. The coil and the support are integrated through the bonding layer. The so-called "integrated" means that the coil is supported (bonded) by the bonding layer.

[0051] The device preferably has an insulating material. The insulating material exists in the space (gap) between the wires of the coil. Air is insulating. Therefore, even if there is no specific insulating material between the wires of the coil, no short circuit will occur in the coil. However, if there is an insulating material (for example, an insulating resin) between the wires of the coil, short circuits caused by metal falling between the wires can be avoided. Since a lateral force is applied to the coil, short circuits caused by the wires contacting each other can also be avoided. Moreover, if the insulating material exists in the space (gap) between the wires, deformation of the coil (wire), etc. is less likely to occur. When the insulating material is, for example, an insulating thermosetting resin (or a photocuring resin), the filled resin is in close contact with the side wall surface of the coil (wire). The coil (wire) is difficult to bend. The side wall surface of the coil (wire) is difficult to oxidize. By flowing the solution of the resin into the gap, the filling can be simply carried out.

[0052] The width of the end of the coil (wire) on the bonding layer side is narrower than the width of the end on the side opposite to the bonding layer. The end on the bonding layer side is, for example, a shape with a generally curved cross-section. For example, it is a generally hemispherical shape, a generally dome-shaped shape, etc. It can also be a semi-rugby shape. Of course, it is not limited to these curved surfaces. Not limited to curved surfaces, it can also be a pyramidal shape or a frustum of a pyramid shape. When the coil is manufactured by a plating method, the coil (wire) generally has a generally curved cross-sectional shape (refer toFigure 5 ). If it is this shape, when the coil (wire) is pressed into the bonding layer, the head end side easily enters the bonding layer (see Figure 6 ). Therefore, it is easy for the bonding layer to support the coil. Moreover, the contact area between the side surface of the head end side of the coil (wire) and the bonding layer is large. Therefore, the coil can be surely supported. The insulating material (insulating material in a flowing state) flows in from above (the side opposite to the support) between the wires of the coil. At this time, the insulating material efficiently flows into the lower part of the gap between the wires of the coil. As the insulating material fills between the wires of the coil, the air existing between the wires easily disappears. On the contrary, if the gap between the wires of the coil at the end on the bonding layer side ( Figure 6 , Figure 7 the lower side in) is small, it is difficult for the insulating material to be perfectly filled to the lower side. Therefore, a form with voids is easily formed.

[0053] The thickness of the bonding layer is preferably 7 μm or more. More preferably 7.5 μm or more. Even more preferably 12.5 μm or more. Even further preferably 25 μm or more. The thickness is preferably 50 μm or less. More preferably 38 μm or less. Even more preferably 25 μm or less. If the thickness of the bonding layer is too thin, it is difficult to support the coil. That is, the meaning of providing the bonding layer becomes weak. On the contrary, if it is too thick, due to the uneven pressure when setting the coil, the height of the upper end of the coil is likely to be uneven (unevenness). The thickness (height) of the bonding layer is preferably thinner than the thickness (height) of the coil. For example, the thickness of the bonding layer is preferably 1 / 3 or less of the thickness of the coil. More preferably 1 / 4 or less. Even more preferably 1 / 5 or less. If the thickness of the bonding layer is thicker than the thickness of the coil, it is difficult to press the coil into the bonding layer. The height of the coil is likely to be uneven depending on the position.

[0054] One or more materials selected from the group consisting of thermosetting resins and photocuring resins are used in the bonding layer. As the thermosetting resin, for example, acrylic resin thermosetting adhesives, rubber resin thermosetting adhesives, vinyl alkyl ether resin thermosetting adhesives, silicone resin thermosetting adhesives, polyester resin thermosetting adhesives, polyamide resin thermosetting adhesives, urethane resin thermosetting adhesives, fluororesin thermosetting adhesives, epoxy resin thermosetting adhesives, etc. are listed. In the adhesive, in addition to the above resins, appropriate components such as a curing agent are contained. As the photocuring resin, for example, epoxy resin photocuring adhesives, fluorine-containing epoxy resin photocuring adhesives, silicone resin photocuring adhesives, acrylic resin photocuring adhesives, fluorine-containing acrylic resin photocuring adhesives, urethane acrylate resin photocuring adhesives, epoxy acrylate resin photocuring adhesives, etc. are listed. Of course, it is not limited thereto. Preferably, it is a type in which the bonding layer does not return to its original state once cured. This is because depending on the usage environment of the coil device, it may be used at high temperatures or irradiated with light (ultraviolet rays). When the coil device is under specific usage conditions (such as high temperature), if the cured bonding layer becomes soft, the coil will shake.

[0055] The insulating material is one or more selected from the group consisting of thermosetting resins and photocuring resins. The resins listed in the adhesive can be used. Of course, it is not limited thereto.

[0056] The coil is substantially spiral or substantially helical. The spiral (helical) shape is not limited to being substantially circular. It can also be rectangular.

[0057] The thickness (height) of the wire of the coil is 30 μm or more. Preferably, it is 100 μm or more. More preferably, it is 200 μm or more. The thickness (height) is preferably 600 μm or less. More preferably, it is 500 μm or less. Even more preferably, it is 250 μm or less. The width of the wire is 100 μm or more. Preferably, it is 130 μm or more. More preferably, it is 150 μm or more. The width is preferably 1000 μm or less. More preferably, it is 800 μm or less. Even more preferably, it is 600 μm or less. The closest distance between the wires of the coil (at Figure 7 、 Figure 8In this case, the distance between the wires of the coil on the upper end side of the coil is 5 μm or more. Preferably it is 7 μm or more. More preferably it is 8 μm or more. Preferably it is 20 μm or less. More preferably it is 15 μm or less. Even more preferably it is 12 μm or less. The reasons are as follows. If the thickness is small, the coil performance (Q value) is low. If the thickness is large, it is difficult to stabilize the width of the wire. If the width is small, it is difficult to perform anisotropic plating. If the width is large, the coil performance (number of winding turns) is low. If the closest distance is small, short circuit is likely to occur. If the closest distance is large, the coil performance (number of winding turns) is low.

[0058] The support, the bonding layer, and the conductive coil may be a single-layer structure. They may also be a laminated structure of two or more layers.

[0059] The second invention is a method for manufacturing a coil device. The method transfers the conductive coil provided on the first support to the insulating bonding layer of the second support having an insulating bonding layer. Alternatively, the method includes steps A, B, and C. Step A sets a conductive coil on the first support. Step B sets an insulating bonding layer on the second support. Step C transfers the coil to the insulating bonding layer. Either step A or step B may be performed first. They may also be performed simultaneously. Of course, step C is after steps A and B.

[0060] Preferably, after the transfer or accompanying the transfer, the first support is peeled off.

[0061] Preferably, the insulating material is filled between the wires of the coil. The filling is preferably performed after the peeling.

[0062] Step A (or the formation of the coil) is performed, for example, in the following manner. A groove is formed on the surface of the first support. Metal plating is performed. Thereby, the groove is filled with metal. Using the metal as a seed, the coil is provided by plating (especially anisotropic plating).

[0063] Step A (or the formation of the coil) is performed, for example, in the following manner. At least the surface layer of the first support is metal. It may also be composed only of a metal material. A photoresist film is provided on the metal surface. The photoresist film is formed into a predetermined pattern. That is, a groove connected to the metal surface is formed in the photoresist film. The formation can be simply performed, for example, by photolithography technology and etching technology. Metal plating is performed. Thereby, the groove is filled with metal. Using the metal as a seed, the coil is provided by plating (especially anisotropic plating).

[0064] In the transfer, preferably the head end portion of the coil (wire) enters the bonding layer.

[0065] The width of the groove is preferably a dimension narrower than the width of the coil (wire).

[0066] The metal type of the metal plating provided in the groove is preferably different from the metal type of the coil. The reason is that it is difficult to peel if they are the same metal.

[0067] The method is, for example, the manufacturing method of the first invention (coil device).

[0068] Hereinafter, specific embodiments will be listed. However, the present invention is not limited to the following embodiments. As long as the characteristics of the present invention are not significantly damaged, various modification examples or application examples are also included in the present invention.

[0069] Figures 1 to 8 It is a manufacturing process diagram of a coil device according to an embodiment of the present invention.

[0070] Prepare a support (first support) 51 (refer to Figure 1 ). The support 51 is a conductive plate. It may also be a conductive sheet. It may also be a conductive foil. It may also be a conductive film. The plate, the sheet, the foil, and the film only differ in thickness. As the conductive material, a metal material is generally listed. Of course, it is not limited thereto. For example, it may also be a conductive resin. The support 51 may also be a conductive film (such as a metal foil) provided on the surface of an insulating material. In short, as long as the surface layer has conductivity. In this embodiment, the support 51 is, for example, a conductive layer (such as a metal layer (metal coating)) 51a provided on one surface of an insulator 51b.

[0071] Apply a photoresist solution (such as an alkaline-developable photoresist solution) onto the support 51 (metal layer 51a). After coating, dry it. Thus, a photoresist film 52 is provided. Then, perform exposure, development, and curing processes. Thus, the photoresist film 52 forms a predetermined pattern. The conductive layer (metal layer) 51a is exposed at the opening 53 of the photoresist film 52 (refer to Figure 2 ). The width of the opening 53 is smaller than the wire width of the coil 56 described later. That is, a value predicted to be smaller than the value of the width of the coil (wire) desired to be obtained. According to the predicted value, set the width of the opening 53.

[0072] The conductive layer 51a functions as a cathode in the electroplating process described later (refer to Figure 4)。From this perspective, the surface of the support 51 must use a conductive layer (such as a metal layer) 51a. The current flowing in the cathode (conductive layer 51a) depends on the resistance value from the power supply unit 54 to the cathode. The entire surface of the cathode surface has a conductive layer 51a. Therefore, the resistance difference at the opening 53 can be made small. As a result, the non-uniformity of the thickness of the electrolytic plating film becomes small. By providing a dummy coil outside the target coil, the non-uniformity of the film thickness of the target coil becomes small.

[0073] Next, a conductive material (especially a metal) is filled in the opening 53. Reference numeral 55 is the filling material. The filling can be performed by known methods. For example, wet plating can be used. Dry plating can also be used. In this embodiment, wet plating is used. For example, electrolytic plating is used. The filling material (conductive material (especially a metal)) is preferably a material different from the material constituting the coil 56. The coil material is generally Cu. Therefore, the filling material is, for example, Ni. The thickness of the filling material 55 filled in the opening 53 is preferably the same (substantially the same) as the thickness of the photoresist film 52. If the thickness of the filling material 55 is smaller than the thickness of the photoresist film 52, when the coil 56 described later is formed, the coil (wire) enters the opening 53. It is difficult to peel off the coil. When transferring the coil, irregularities appear on the end face of the coil. The coil performance (duty factor) is low. If the thickness of the filling material 55 is thicker than the thickness of the photoresist film 52, when the coil 56 described later is formed, the filling material 55 enters the coil 56. The contact area between the filling material 55 and the coil (wire) becomes large. As a result, it is difficult to peel off the coil 56. When transferring the coil (wire), irregularities appear on the end face of the coil (wire). The coil performance (duty factor) is low.

[0074] After the filling material 55 is filled in the opening 53, the coil 56 is provided. The coil 56 is formed using electrolytic plating. For example, degreasing, water washing, and sulfuric acid washing are performed. The Figure 3 shown material is immersed in the plating bath 57 (refer to Figure 4 ). The power supply unit 54 is connected to the cathode (conductive layer 51a), and power is supplied. Thereby, electrolytic plating (electroplating) is performed. The plating solution is, for example, copper sulfate, chloride, inhibitor, and accelerator. The current density is, for example, 0.5 A / cm 2 . Of course, it is not limited thereto. Anisotropic plating (the plating growth rate in the vertical (height) direction is larger than the plating growth rate in the lateral direction) is performed under the above conditions. Since anisotropic plating is well known, its detailed description is omitted. A spiral coil 56 is formed (refer to Figure 5 . The spiral is referred to Figure 10 (top view)). The upper end side of the wire of the coil 56 ( Figure 5 the upper end side in) is substantially dome-shaped. It is not a flat surface (plane) (refer toFigure 5 )。A coil 56 with a wire of a predetermined thickness is formed, and the plating operation is completed. The thickness (height) of the coil 56 is, for example, 220 μm at the position on the innermost circumferential side. The distance between the wires of the coil 56 is, for example, 10 μm. In the plating process, the coating thickness of the wire at the outermost circumferential position in the spiral pattern of the coil 56 is thick (refer to Figure 5 ). The position 56a where the coating thickness is thick is called a false pattern. The existence of the false pattern 56a is one of the main reasons for the reduction of coil performance. Pull up the support 51 from the plating solution. Wash and dry. If necessary, in order to inhibit Cu discoloration, apply an anti-rust agent.

[0075] Next, transfer the coil 56 (refer to Figure 6 ). The coil 56 formed by the plating is transferred onto a support (second support) 58. The support (second support) 58 is, for example, an insulating plate. It can also be an insulating sheet. It can also be an insulating film. As long as it is an insulating material. For example, inorganic materials (such as glass or ceramics, etc.), organic materials (such as plastics like polyimide, etc.) can be cited. Reference numeral 59 is a bonding layer. The material (adhesive) of the bonding layer 59 is epoxy resin. The thickness of the bonding layer 59 is 25 μm. The bonding layer 59 is formed by coating the adhesive on the surface of the support 58. The transfer is carried out in the following manner. First, the head end side (bent side) of the wire of the coil 56 is pressed into the bonding layer 59. At this time, the shape of the support 58 is preferably the same as the shape of the coil 56 (the shape inside the false pattern 56a). The shape of the support 58 is preferably such that it cannot transfer the shape of the false pattern 56a. This is to prevent the transfer of the false pattern 56a during the transfer (refer to Figure 6 , Figure 7 ). If the false pattern 56a is also transferred simultaneously, the coil height will have unevenness and the coil performance will be reduced. Even when the shape of the support 58 includes the size of the false pattern 56a, if there is no bonding layer 59 at the position corresponding to the false pattern 56a, the false pattern 56a will not be transferred. However, if the shape of the support 58 meets the above conditions, it is relatively simple.

[0076] After the transfer of the coil 56, peel off the support (first support) 51.

[0077] The peeling can also be carried out along with the transfer. By "along with the transfer" is meant that the transfer and the peeling are carried out simultaneously (almost simultaneously).

[0078] After the peeling, an insulating material is filled in the gap 60 between the wires 56b of the coil 56. The insulating material is preferably an insulating resin. The resin is selected from one or more of the group consisting of thermosetting resins and photocuring resins. In the present embodiment, a material capable of forming a flexible cured film (Mitsubishi Chemical Corporation's Lukid V985-E mainly composed of polyurethane resin) is used. The resin-containing solution flows into the gap 60 between the wires 56b of the coil 56. When the gap is about 10 μm, a resin-containing solution having a viscosity of preferably about 100 Pa·s or less (more preferably 10 to 20 Pa·s) is used. Since the resin solution flows in, the upper surface (flat surface) 56c of the coil (wire) is covered with the covering film 61a. Reference numeral 61b is a filler filled in the gap 60. After the flowing-in, a heat treatment is performed. Thereby, the insulating material is cured.

[0079] According to the above manufacturing method, a coil device without the false pattern 56a can be simply obtained. If the coil device has the false pattern 56a, it becomes a coil device with uneven height. As a result, it becomes a coil device with poor characteristics. The above coil device solves the above problems.

[0080] Figure 9 is Figure 8 an example of double-layer stacking of coils. Since only the Figure 8 coils are double-layer stacked, its detailed description is omitted.

[0081] Description of Reference Numerals

[0082] 51: Support (first support)

[0083] 51a: Conductive layer (metal layer)

[0084] 51b: Insulator

[0085] 52: Photoresist film

[0086] 53: Opening

[0087] 54: Power supply unit

[0088] 55: Filling material

[0089] 56: Coil

[0090] 56a: False pattern

[0091] 56b: Wire of coil

[0092] 56c: Upper surface (flat surface) of wire of coil

[0093] 57: Plating bath

[0094] 58: Support (second support)

[0095] 59: Bonding layer

[0096] 60: Gap

[0097] 61a: Covering film

[0098] 61b: Filler

Claims

1. A coil device, comprising: Support body; Insulating bonding layer provided on the support body; And Conductive coil, a part of the conductive coil enters the bonding layer, The height of the wire of the coil is 200 to 500 μm, the width of the wire is 100 to 800 μm, the closest distance between wires is 5 to 20 μm, the coil is substantially spiral or substantially helical when viewed from above, the end of the coil entering the bonding layer has a substantially curved cross-sectional shape, and the surface of the end of the coil on the side opposite to the bonding layer is a flat surface, The thickness of the bonding layer is 12.5 to 50 μm and is less than 1 / 4 of the height of the wire of the coil, An insulating material is provided between the wires of the coil.

2. The coil device according to claim 1, wherein, One or more selected from the group of thermosetting resins and photocurable resins are used as the material of the bonding layer.

3. The coil device according to claim 1, wherein, One or more selected from the group of thermosetting resins and photocurable resins are used as the material of the insulating material.

4. The coil device according to claim 1, wherein, The support body, the bonding layer and the conductive coil are single-layer or laminated two or more layers.

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