MMIC microwave switches, T / R components and radar

Abstract

The application provides a MMIC microwave switch, a T / R component and a radar. The MMIC microwave switch comprises a first switching module, a second switching module and a third switching module; the first switching module is used for selectively connecting a common end with one of the second switching module, the third switching module and a ground end; the second switching module is used for selectively connecting a first radio frequency end with a transmitting branch output end or the first switching module; the third switching module is used for selectively connecting a second radio frequency end with a receiving branch input end or the first switching module; wherein, when the first switching module connects the common end with the ground end, the T / R component is in a mute state. The application can improve the signal isolation of the T / R component.

Description

Technical Field

[0001] The present invention relates to the technical field of monolithic microwave integrated circuits, and in particular to an MMIC microwave switch, a T / R component and a radar. Background Art

[0002] The T / R (Transmitter and Receiver) assembly is a key component of phased array radar, determining the performance, size, cost, and weight of the radar system. As the application areas of modern radars gradually expand from the ground to the ocean, sky, and space, driven by the radar industry, T / R components are gradually developing in the direction of miniaturization and lightweighting, and T / R components are gradually adopting monolithic microwave integrated circuit (MMIC) circuits.

[0003] The core MMIC circuits in the T / R module include phase shifters, attenuators, switches, low-noise amplifiers, power amplifiers, and gain amplifiers. There are three basic structures for T / R modules: separate transmit and receive, shared phase shifter, and common leg. The block diagram of a standard common leg T / R module is shown below. Figure 1 As shown, the switching between the receiving state and the transmitting state of the T / R component is achieved by a combination of several microwave switches.

[0004] The T / R module of the common leg structure has only two states: receiving and transmitting. However, the inventors have found that in practical applications, in some cases, it is necessary to completely shut down the receiving and transmitting channels to achieve high signal isolation. Most existing MMIC microwave switches cannot meet this requirement. Summary of the Invention

[0005] Embodiments of the present invention provide an MMIC microwave switch, a T / R assembly, and a radar to address the problem that, in some cases, both the receiving and transmitting channels need to be completely shut down to achieve higher signal isolation, and most existing MMIC microwave switches cannot meet this requirement.

[0006] In a first aspect, the present invention provides an MMIC microwave switch, comprising: a first switching module, a second switching module, and a third switching module;

[0007] The first switching module is connected with the common terminal of the T / R assembly, the second switching module, the ground terminal of the T / R assembly and the third switching module respectively; the second switching module is connected with the transmitting branch output terminal of the T / R assembly and the first radio frequency terminal of the T / R assembly respectively; the third switching module is connected with the receiving branch input terminal of the T / R assembly and the second radio frequency terminal of the T / R assembly respectively; wherein the first radio frequency terminal and the second radio frequency terminal are connected through the common amplitude and phase control circuit module of the T / R assembly;

[0008] The first switching module is used for selectively connecting the common terminal with one of the second switching module, the third switching module and the ground terminal.

[0009] The second switching module is used for selectively connecting the first radio frequency terminal with the transmitting branch output terminal or the first switching module.

[0010] The third switching module is used for selectively connecting the second radio frequency terminal with the receiving branch input terminal or the first switching module.

[0011] When the first switching module connects the common terminal with the ground terminal, the T / R assembly is in a mute state.

[0012] In a possible implementation, when the first switching module connects the common terminal with the third switching module, the second switching module connects the first radio frequency terminal with the transmitting branch output terminal, and the third switching module connects the second radio frequency terminal with the first switching module, the T / R assembly is in a transmitting state.

[0013] When the first switching module connects the common terminal with the second switching module, the second switching module connects the first radio frequency terminal with the first switching module, and the third switching module connects the second radio frequency terminal with the receiving branch input terminal, the T / R assembly is in a receiving state.

[0014] In a possible implementation, the first switching module comprises a first switching unit and a second switching unit.

[0015] The first switching unit is connected with the common terminal, the second switching unit and the third switching module respectively; the second switching unit is connected with the second switching module and the ground terminal respectively.

[0016] The first switching unit is used for selectively connecting the common terminal with the second switching unit or the third switching module.

[0017] The second switching unit is used for selectively connecting the first switching unit with the second switching module or the ground terminal.

[0018] When the first switching unit connects the common terminal with the second switching unit, and the second switching unit connects the first switching unit with the ground terminal, the T / R assembly is in a mute state.

[0019] In one possible implementation, the first switching unit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first isolation resistor, a second isolation resistor, a third isolation resistor, a fourth isolation resistor, a fifth isolation resistor, a sixth isolation resistor, a first microstrip line, a second microstrip line, and a third microstrip line;

[0020] a first transistor, having a gate connected to the second end of the first isolation resistor, a drain connected to the drain of the second transistor and the first end of the second microstrip line respectively, and a source connected to the ground end;

[0021] a second transistor, the gate of which is connected to the second end of the second isolation resistor, and the source of which is respectively connected to the second end of the first microstrip line and the source of the fifth transistor; and a first end of the first microstrip line is connected to the common end;

[0022] a third transistor, having a gate connected to the second end of the third isolation resistor, a drain connected to the second end of the second microstrip line and the second switching unit respectively, and a source connected to the ground end;

[0023] a fourth transistor, having a gate connected to the second end of the fourth isolation resistor, a drain connected to the drain of the fifth transistor and the first end of the third microstrip line respectively, and a source connected to the ground end; and a gate of the fifth transistor connected to the second end of the fifth isolation resistor;

[0024] a sixth transistor, having a gate connected to the second end of the sixth isolation resistor, a drain connected to the second end of the third microstrip line and the third switching module respectively, and a source connected to the ground end;

[0025] The first end of the first isolation resistor is connected to the first end of the third isolation resistor and the first end of the fifth isolation resistor respectively, serving as a first control end;

[0026] The first end of the second isolation resistor is connected to the first end of the fourth isolation resistor and the first end of the sixth isolation resistor respectively, serving as a second control end;

[0027] When the first control terminal receives a high level and the second control terminal receives a low level, the first switching unit connects the common terminal to the third switching module;

[0028] When the first control terminal receives a low level and the second control terminal receives a high level, the first switching unit connects the common terminal to the second switching unit.

[0029] In one possible implementation, the second switching unit includes a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, a seventh isolation resistor, an eighth isolation resistor, a ninth isolation resistor, a tenth isolation resistor, a load resistor, a fourth microstrip line, and a fifth microstrip line;

[0030] The seventh transistor has a gate connected to the second end of the seventh isolation resistor, a drain connected to the drain of the eighth transistor and the first end of the fourth microstrip line, and a source connected to a ground terminal;

[0031] The eighth transistor has a gate connected to the second end of the eighth isolation resistor, a source connected to the source of the ninth transistor and the second end of the fifth microstrip line, and a drain connected to the first end of the load resistor;

[0032] The ninth transistor has a gate connected to the second end of the ninth isolation resistor, and a drain connected to the first end of the load resistor;

[0033] The tenth transistor has a gate connected to the second end of the tenth isolation resistor, a drain connected to the second end of the fourth microstrip line and the second switching module, and a source connected to a ground terminal;

[0034] The first end of the eighth isolation resistor is a third control terminal;

[0035] The first end of the seventh isolation resistor is connected to the first end of the ninth isolation resistor and the first end of the tenth isolation resistor, and is a fourth control terminal;

[0036] When the third control terminal receives a high level and the fourth control terminal receives a low level, the second switching unit connects the first switching unit and the second switching module;

[0037] When the third control terminal receives a low level and the fourth control terminal receives a high level, the second switching unit connects the first switching unit and the ground terminal.

[0038] In a possible implementation, the second switching module includes an eleventh transistor, a twelfth transistor, a thirteenth transistor, a fourteenth transistor, a fifteenth transistor, a sixteenth transistor, an eleventh isolation resistor, a twelfth isolation resistor, a thirteenth isolation resistor, a fourteenth isolation resistor, a fifteenth isolation resistor, a sixteenth isolation resistor, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth microstrip line, and a tenth microstrip line;

[0039] The eleventh transistor has a gate connected to the first end of the eleventh isolation resistor, a drain connected to the second end of the sixth microstrip line and the first end of the seventh microstrip line, and a source connected to a ground terminal of the T / R component; the first end of the sixth microstrip line is connected to the first switching module;

[0040] The twelfth transistor has a gate connected to the first end of the twelfth isolation resistor, a drain connected to the drain of the thirteenth transistor and the second end of the seventh microstrip line, and a source connected to a ground terminal;

[0041] a thirteenth transistor, having a gate connected to the first end of the thirteenth isolation resistor, a source connected to the source of the fourteenth transistor and the first end of the eighth microstrip line respectively; and a second end of the eighth microstrip line connected to the first radio frequency terminal;

[0042] a fourteenth transistor, having a gate connected to the first end of the fourteenth isolation resistor, and a drain connected to the drain of the fifteenth transistor and the second end of the ninth microstrip line respectively;

[0043] a fifteenth transistor, having a gate connected to the first end of the fifteenth isolation resistor and a source connected to the ground end;

[0044] a sixteenth transistor, having a gate connected to the second end of the sixteenth isolation resistor, a drain connected to the first end of the ninth microstrip line and the first end of the tenth microstrip line respectively, and a source connected to the ground end; and a second end of the tenth microstrip line connected to the output end of the transmitting branch;

[0045] The second end of the eleventh isolation resistor is connected to the second end of the twelfth isolation resistor and the second end of the fourteenth isolation resistor respectively, serving as the first control end;

[0046] The second end of the thirteenth isolation resistor is connected to the second end of the fifteenth isolation resistor and the first end of the sixteenth isolation resistor respectively, serving as a second control end;

[0047] When the first control terminal receives a high level and the second control terminal receives a low level, the second switching module connects the first RF terminal to the output terminal of the transmitting branch;

[0048] When the first control terminal receives a low level and the second control terminal receives a high level, the second switching module connects the first RF terminal to the first switching module.

[0049] In one possible implementation, the third switching module includes a seventeenth transistor, an eighteenth transistor, a nineteenth transistor, a twentieth transistor, a twenty-first transistor, a twenty-second transistor, a seventeenth isolation resistor, an eighteenth isolation resistor, a nineteenth isolation resistor, a twentieth isolation resistor, a twenty-first isolation resistor, a twenty-second isolation resistor, an eleventh microstrip line, a twelfth microstrip line, a thirteenth microstrip line, a fourteenth microstrip line, and a fifteenth microstrip line;

[0050] a seventeenth transistor, having a gate connected to the second end of the seventeenth isolation resistor, a drain connected to the second end of the eleventh microstrip line and the first end of the twelfth microstrip line respectively, and a source connected to the ground end of the T / R component; the first end of the eleventh microstrip line is connected to the first switching module;

[0051] an eighteenth transistor, having a gate connected to the first end of the eighteenth isolation resistor, a drain connected to the drain of the nineteenth transistor and the second end of the twelfth microstrip line respectively, and a source connected to the ground end;

[0052] a nineteenth transistor, having a gate connected to the first end of the nineteenth isolation resistor, and a source connected to the source of the twentieth transistor and the first end of the thirteenth microstrip line respectively; a second end of the thirteenth microstrip line is connected to the second RF port;

[0053] a twentieth transistor, having a gate connected to the first end of the twentieth isolation resistor, and a source connected to the drain of the twenty-first transistor and the second end of the fourteenth microstrip line respectively;

[0054] a twenty-first transistor, having a gate connected to the first end of the twenty-first isolation resistor and a source connected to the ground end;

[0055] a twenty-second transistor, having a gate connected to the second end of the twenty-second isolation resistor, a drain connected to the first end of the fourteenth microstrip line and the second end of the fifteenth microstrip line, and a source connected to the ground end; the first end of the fifteenth microstrip line is connected to the input end of the receiving branch;

[0056] The second end of the nineteenth isolation resistor is connected to the second end of the twenty-first isolation resistor and the first end of the twenty-second isolation resistor respectively as a first control end;

[0057] The first end of the seventeenth isolation resistor is connected to the second end of the eighteenth isolation resistor and the second end of the twentieth isolation resistor respectively, serving as the second control end;

[0058] When the first control terminal receives a high level and the second control terminal receives a low level, the third switching module connects the second RF terminal to the first switching module;

[0059] When the first control terminal receives a low level and the second control terminal receives a high level, the third switching module connects the second RF terminal to the receiving branch input terminal.

[0060] In a second aspect, the present invention provides a T / R assembly comprising the MMIC microwave switch according to the first aspect.

[0061] In a possible implementation, the T / R component further includes a controller; the first switching module, the second switching module, and the third switching module are all controlled by the controller;

[0062] A controller, wherein the first control end is connected to the first switching module, the second switching module and the third switching module respectively, the second control end is connected to the first switching module, the second switching module and the third switching module respectively, the third control end is connected to the first switching module, and the fourth control end is connected to the first switching module;

[0063] The output levels of the first control terminal of the controller and the second control terminal of the controller are different, and the output levels of the third control terminal of the controller and the fourth control terminal of the controller are different.

[0064] In a third aspect, the present invention provides a radar comprising the T / R assembly according to the second aspect.

[0065] The present invention provides an MMIC microwave switch, comprising a first switching module, a second switching module, and a third switching module. The first switching module is configured to selectively connect a common terminal to one of the second switching module, the third switching module, and a ground terminal. The second switching module is configured to selectively connect a first radio frequency terminal to a transmitting branch output terminal or the first switching module. The third switching module is configured to selectively connect the second radio frequency terminal to a receiving branch input terminal or the first switching module. When the first switching module connects the common terminal to the ground terminal, the T / R component is in a silent state. In the silent state, the T / R component does not operate, which can reduce the power consumption of the T / R component, improve signal isolation, increase the operating reliability of the T / R component, and expand the applicability of the T / R component in multiple scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0067] Figure 1 This is a structural block diagram of a standard common leg structure T / R component provided by an embodiment of the present invention;

[0068] Figure 2 1 is a schematic structural diagram of an MMIC microwave switch provided by an embodiment of the present invention;

[0069] Figure 3 1 is a schematic structural diagram of another MMIC microwave switch provided by an embodiment of the present invention;

[0070] Figure 4 Schematic diagram of the specific circuit structure of the MMIC microwave switch provided by an embodiment of the present invention;

[0071] Figure 5 Schematic diagram of the T / R component structure of an MMIC microwave switch provided in an embodiment of the present invention;

[0072] Figure 6 is a layout of an MMIC microwave switch provided in an embodiment of the present invention;

[0073] Figure 7 The input and output standing wave test results of the conduction path of the MMIC microwave switch when the T / R assembly provided by the embodiment of the present invention is in the transmitting state;

[0074] Figure 8 This is the insertion loss test result of the conduction path of the MMIC microwave switch when the T / R assembly provided by the embodiment of the present invention is in the transmitting state;

[0075] Figure 9 This is the test result of the RF3-RF1 channel isolation of the MMIC microwave switch provided by the embodiment of the present invention when the T / R assembly is in the transmitting state;

[0076] Figure 10 The input and output standing wave test results of the MMIC microwave switch conduction path when the T / R assembly provided by the embodiment of the present invention is in the receiving state;

[0077] Figure 11 This is the insertion loss test result of the conduction path of the MMIC microwave switch when the T / R assembly provided by the embodiment of the present invention is in the receiving state;

[0078] Figure 12 This is the test result of the RF1-RF2 channel isolation of the MMIC microwave switch provided by the embodiment of the present invention when the T / R assembly is in the receiving state;

[0079] Figure 13 This is the standing wave test result of the MMIC microwave switch RF1 port under load when the T / R assembly provided by the embodiment of the present invention is in a state;

[0080] Figure 14 This is the test result of the MMIC microwave switch transceiver channel isolation when the T / R assembly provided by the embodiment of the present invention is under load. DETAILED DESCRIPTION

[0081] To help those skilled in the art better understand this solution, the following will clearly describe the technical solutions in the embodiments of this solution in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of this solution, not all of it. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative work should fall within the scope of protection of this solution.

[0082] Throughout the specification, claims, and accompanying figures of this solution, the term "including" and any variations thereof mean "including, but not limited to," and are intended to cover non-exclusive inclusions and are not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish between different objects, not to describe a specific order.

[0083] The following is a detailed description of the implementation of the present invention with reference to the accompanying drawings:

[0084] T / R components are key components of phased array radars, determining their performance, size, cost, and weight. Since the 1980s, they have been implemented using monolithic microwave integrated circuits (MMICs). As the application of modern radar has expanded from terrestrial applications to ocean, air, and space, the radar industry has driven the trend toward miniaturization and lightweighting. T / R components are increasingly integrating core single-function MMIC circuits using multi-function chip technology.

[0085] The development of second-generation semiconductor materials, represented by GaAs, has driven the rapid growth of MMICs. GaN, a representative of third-generation semiconductor materials, boasts a wider bandgap, higher breakdown electric field, and faster electron saturation velocity compared to first- and second-generation semiconductor materials, making it suitable for high-frequency, high-power devices. GaN HEMT devices were developed in the 1990s. Due to the need to address technical difficulties in substrate growth, epitaxial structure design, device processing, component modeling, and reliability, GaN MMICs did not enter the industrial stage until after 2011. Modern radar T / R components are gradually being replaced by GaN MMICs, making them a research hotspot in recent years.

[0086] The core MMIC circuits in a T / R assembly include phase shifters, attenuators, switches, low-noise amplifiers, power amplifiers, and gain amplifiers. There are three basic T / R assembly structures: separate transmitter and receiver, shared phase shifter, and common leg. Of these three, the common leg structure is the smallest and most cost-effective, making it the most widely used.

[0087] See also Figure 1 , which shows a structural block diagram of a standard common leg structure T / R component provided by an embodiment of the present invention. Figure 1 As shown, the T / R assembly includes: a first switch, a second switch, a third switch, an antenna, a circulator, a limiter, a low-noise amplifier, a power amplifier, a first gain amplifier, a second gain amplifier, an attenuator, a gain amplifier, a phase shifter, and a COM terminal. The first, second, and third switches are all single-pole double-throw switches. The two gain amplifiers, attenuator, gain amplifier, and phase shifter constitute a shared amplitude and phase control circuit module.

[0088] Generally, the T / R component includes a receiving channel, a transmitting channel, and a common channel. The receiving channel includes a limiter and a low-noise amplifier, the transmitting channel includes a power amplifier, and the common channel includes a shared amplitude and phase control circuit module.

[0089] Specifically, the connection relationship of the T / R components is as follows:

[0090] The power amplifier has an input end connected to the second switch and an output end connected to the circulator. The input end of the power amplifier can be considered as the output end of the transmitting branch of the T / R component.

[0091] The limiter has an input connected to the circulator and an output connected to the input of a low-noise amplifier. The output of the low-noise amplifier is connected to a third switch. The output of the low-noise amplifier can be considered as the input of the receiving branch of the T / R assembly.

[0092] The phase shifter has an input connected to the third switch and an output connected to the input of the first gain amplifier. The second gain amplifier has an input connected to the output of the attenuator and an output connected to the second switch. The input of the attenuator is connected to the output of the first gain amplifier. The input of the phase shifter can be considered as the first RF terminal of the T / R assembly, and the output of the second gain amplifier can be considered as the second RF terminal of the T / R assembly. In other words, the first RF terminal and the second RF terminal are connected through a common amplitude and phase control circuit module.

[0093] The first switch is connected to the second switch, the third switch, and the COM terminal, respectively. The COM terminal can be considered the common terminal of the T / R assembly. When the T / R assembly is in the transmitting state, the COM terminal serves as the input terminal of the T / R assembly's transmitting branch; when the T / R assembly is in the receiving state, the COM terminal serves as the output terminal of the T / R assembly's receiving branch.

[0094] Exemplarily, when the T / R component is in the transmitting state, the flow of signal processing is:

[0095] COM terminal → first switch → third switch → phase shifter → first gain amplifier → attenuator → second gain amplifier → second switch → power amplifier → circulator → antenna.

[0096] When the T / R component is in the receiving state, the signal processing flow is:

[0097] Antenna → circulator → limiter → low noise amplifier → third switch → phase shifter → first gain amplifier → attenuator → second gain amplifier → second switch → first switch → COM terminal.

[0098] Typically, a T / R module can only operate in either the transmit or receive state. However, the inventors discovered that in some practical applications, to reduce T / R module power consumption or improve signal isolation, it is necessary to completely shut down both the receive and transmit channels. Existing MMIC microwave switches often fail to meet these requirements.

[0099] See also Figure 2 , which shows a schematic structural diagram of an MMIC microwave switch provided by an embodiment of the present invention; Figure 2As shown, in order to solve the above problems, an embodiment of the present invention provides an MMIC microwave switch, which is applied to a T / R assembly. The microwave switch includes a first switching module S1, a second switching module S2 and a third switching module S3;

[0100] The first switching module S1 is respectively connected to the common terminal RF1 of the T / R component, the second switching module S2, the ground terminal GND of the T / R component and the third switching module S3; the second switching module S2 is respectively connected to the transmitting branch output terminal RF2 of the T / R component and the first RF terminal RFC1 of the T / R component; the third switching module S3 is respectively connected to the receiving branch input terminal RF3 of the T / R component and the second RF terminal RFC2 of the T / R component; wherein, the first RF terminal RFC1 and the second RF terminal RFC2 are connected through the common amplitude and phase control circuit module of the T / R component.

[0101] Optionally, the first switching module S1 may be a single-pole triple-throw switch, and the second switching module S2 and the third switching module S3 may be single-pole double-throw switches. The first switching module S1, the second switching module S2 and the third switching module S3 may also all be switches with multi-directional selection composed of switching tubes.

[0102] Specifically, the first switching module S1 has a first end connected to the common terminal RF1 of the T / R assembly, a second end connected to the first end of the second switching module S2, a third end connected to the first end of the third switching module, and a fourth end connected to the ground terminal GND of the T / R assembly;

[0103] a second switching module S2, a second end of which is connected to the transmitting branch output terminal RF2 of the T / R component, and a third end of which is connected to the transmitting branch output terminal RF2 of the T / R component;

[0104] The third switching module S3 has a second end connected to the receiving branch input end RF3 of the T / R component, and a third end connected to the second radio frequency end RFC2 of the T / R component.

[0105] The first switching module S1 is used to selectively connect the common terminal RF1 to one of the second switching module S2, the third switching module S3, and the ground terminal GND;

[0106] The second switching module S2 is used to selectively connect the first radio frequency terminal RFC1 to the transmitting branch output terminal RF2 or the first switching module S1;

[0107] A third switching module S3 is used to selectively connect the second radio frequency terminal RFC2 to the receiving branch input terminal RF3 or the first switching module S1;

[0108] When the first switching module S1 connects the common terminal RF1 to the ground terminal GND, the T / R assembly is in a silent state. In the silent state, the T / R assembly neither transmits nor receives external signals, that is, the T / R assembly is neither in a transmitting state nor in a receiving state.

[0109] Optionally, the first switching module S1 may not be connected to the ground terminal GND of the T / R component and may be left floating, so that the T / R component does not form a working loop and the T / R component is also in a silent state. Whether the first selection module S1 is grounded or left floating can be specifically set according to actual conditions.

[0110] Optionally, when the first switching module S1 connects the common terminal RF1 with the third switching module S3, and the second switching module S2 connects the first RF terminal RFC1 with the transmitting branch output terminal RF2, and the third switching module S3 connects the second RF terminal RFC2 with the first switching module S1, the T / R component is in the transmitting state.

[0111] Specifically, the common terminal RF1 serves as the input terminal of the transmitting branch at this time, and the signal flow in the transmitting state is: RF1→S1→S3→RFC2→RFC1→S2→RF2.

[0112] Optionally, when the first switching module S1 connects the common terminal RF1 with the second switching module S2, and the second switching module S2 connects the first RF terminal RFC1 with the first switching module S1, and the third switching module S3 connects the second RF terminal RFC2 with the receiving branch input terminal RF3, the T / R component is in the receiving state.

[0113] Specifically, the common terminal RF1 serves as the output terminal of the receiving branch at this time, and the signal flow in the receiving state is: RF3→S3→RFC2→RFC1→S2→S1→RF1.

[0114] This embodiment of the present invention uses the first switching module S1, the second switching module S2, and the third switching module S3 to divide the T / R assembly into a transmitting state, a receiving state, and a silent state. While ensuring normal operation of the T / R assembly, the silent state is added to improve signal isolation and enhance the reliability of the T / R assembly.

[0115] See also Figure 3 , which shows a structural diagram of another MMIC microwave switch provided by an embodiment of the present invention. Figure 3 As shown, in some embodiments of the present invention, the first switching module S1 includes a first switching unit S01 and a second switching unit S02;

[0116] The first switching unit S01 is connected with the common terminal RF1, the second switching unit S02 and the third switching module S3 respectively; the second switching unit S02 is connected with the second switching module S2 and the ground terminal GND respectively.

[0117] Specifically, the first switching unit S01 is connected with the first end of the first switching module S1, the first end of the second switching unit S02 and the third end of the first switching module S1; the second switching unit S02 is connected with the second end of the first switching module S1 and the fourth end of the first switching module S1.

[0118] The first switching unit S01 is used for selectively connecting the common terminal RF1 with the second switching unit S02 or the third switching module S3.

[0119] The second switching unit S02 is used for selectively connecting the first switching unit S01 with the second switching module S2 or the ground terminal GND.

[0120] When the first switching unit S01 connects the common terminal RF1 with the second switching unit S02 and the second switching unit S02 connects the first switching unit S01 with the ground terminal GND, the T / R assembly is in a mute state.

[0121] Optionally, the first switching module S1 and the second switching module S2 can be referred to as a receiving channel of the T / R assembly, and the second switching module S2 and the third switching module S3 can be referred to as a transmitting channel of the T / R assembly.

[0122] Figure 3 The second switching unit S02 is connected between the first switching unit S01 and the second switching module S2, that is, the second switching unit S02 is located in the receiving channel. In addition, the second switching unit S02 can also be located in the transmitting channel. However, considering that the gain and output power performance of the transmitting channel of the T / R assembly are required to be higher than those of the receiving channel, the influence of the loss introduced by the second switching unit S02 on the gain and transmitting power of the receiving channel can be ignored. Therefore, in actual application, the second switching unit S02 is arranged in the receiving channel, so as to improve the working performance of the T / R assembly.

[0123] Referring to Figure 4 which shows a specific circuit structure schematic diagram of the MMIC microwave switch provided by the embodiment of the present application. As shown in Figure 4As shown, in some embodiments of the present invention, the first switching unit S01 includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a fifth transistor M5, a sixth transistor M6, a first isolation resistor R1, a second isolation resistor R2, a third isolation resistor R3, a fourth isolation resistor R4, a fifth isolation resistor R5, a sixth isolation resistor R6, a first microstrip line TL1, a second microstrip line TL2 and a third microstrip line TL3;

[0124] A first transistor M1, having a gate connected to the second end of the first isolation resistor R1, a drain connected to the drain of the second transistor M2 and the first end of the second microstrip line TL2, and a source connected to the ground terminal GND;

[0125] a second transistor M2, having a gate connected to the second end of the second isolation resistor R2, and a source connected to the second end of the first microstrip line TL1 and the source of the fifth transistor M5, respectively; a first end of the first microstrip line TL1 is connected to the common terminal RF1;

[0126] a third transistor M3, having a gate connected to the second end of the third isolation resistor R3, a drain connected to the second end of the second microstrip line TL2 and the second switching unit S02, and a source connected to the ground terminal GND;

[0127] a fourth transistor M4, having a gate connected to the second end of the fourth isolation resistor R4, a drain connected to the drain of the fifth transistor M5 and the first end of the third microstrip line TL3 respectively, and a source connected to the ground terminal GND; a gate of the fifth transistor M5 connected to the second end of the fifth isolation resistor R5;

[0128] a sixth transistor M6 , having a gate connected to the second end of the sixth isolation resistor R6 , a drain connected to the second end of the third microstrip line TL3 and the third switching module S3 , and a source connected to the ground terminal GND;

[0129] A first end of the first isolation resistor R1 is connected to a first end of the third isolation resistor R3 and a first end of the fifth isolation resistor R5 respectively, serving as a first control end VT1;

[0130] The first end of the second isolation resistor R2 is connected to the first end of the fourth isolation resistor R4 and the first end of the sixth isolation resistor R6 respectively, and serves as the second control end VT2.

[0131] Optionally, when the first control terminal VT1 receives a high level and the second control terminal VT2 receives a low level, the first switching unit S01 connects the common terminal RF1 to the third switching module S3;

[0132] When the first control terminal VT1 receives a low level and the second control terminal VT2 receives a high level, the first switching unit S01 connects the common terminal RF1 and the second switching unit S02.

[0133] Optionally, the first isolation resistor R1, the second isolation resistor R2, the third isolation resistor R3, the fourth isolation resistor R4, the fifth isolation resistor R5, and the sixth isolation resistor R6 are external isolation resistors connected to the gates of their corresponding transistors, typically with a resistance greater than 1.5 kΩ. The first microstrip line TL1, the second microstrip line TL2, and the third microstrip line TL3 are relatively long, which can improve the operating performance of the MMIC microwave switch.

[0134] Optionally, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5, and the sixth transistor M6 may all be HEMTs (High Electron Mobility Transistors). When the gate-source voltage of the HEMT is 0 V, the HEMT is turned on; when the gate-source voltage of the HEMT is reverse biased to exceed the pinch-off voltage, i.e., -15 V, the HEMT is turned off. That is, the HEMT is turned on when a high level is applied and turned off when a low level is applied.

[0135] Normally, a single HEMT connected in series can function as a single-pole, single-throw microwave switch. However, the performance of a single series HEMT microwave switch is limited. Therefore, the present invention combines a series HEMT with a parallel HEMT to achieve lower insertion loss and higher signal isolation. Furthermore, a pair of complementary voltage levels is applied to the two HEMTs, providing two control signals to ensure proper operation.

[0136] See also Figure 4 In some embodiments of the present invention, the second switching unit includes a seventh transistor M7, an eighth transistor M8, a ninth transistor M9, a tenth transistor M10, a seventh isolation resistor R7, an eighth isolation resistor R8, a ninth isolation resistor R9, a tenth isolation resistor R10, a load resistor RL, a fourth microstrip line TL4, and a fifth microstrip line TL5;

[0137] a seventh transistor M7, having a gate connected to the second end of the seventh isolation resistor R7, a drain connected to the drain of the eighth transistor M8 and the first end of the fourth microstrip line TL4, and a source connected to the ground terminal GND;

[0138] an eighth transistor M8, having a gate connected to the second end of the eighth isolation resistor R8, and a source connected to the source of the ninth transistor M9 and the second end of the fifth microstrip line TL5, respectively; a first end of the fifth microstrip line TL5 is connected to the first switching unit S01;

[0139] a ninth transistor M9 , having a gate connected to the second end of the ninth isolation resistor R9 and a drain connected to the first end of the load resistor RL; the second end of the load resistor RL is connected to the ground terminal GND;

[0140] a tenth transistor M10 , having a gate connected to the second end of the tenth isolation resistor R10 , a drain connected to the second end of the fourth microstrip line TL4 and the second switching module S2 , and a source connected to the ground terminal GND;

[0141] The first end of the eighth isolation resistor R8 serves as the third control end VT3;

[0142] A first end of the seventh isolation resistor R7 is connected to a first end of the ninth isolation resistor R9 and a first end of the tenth isolation resistor R10 respectively, and serves as a fourth control end VT4.

[0143] Optionally, when the third control terminal VT3 receives a high level and the fourth control terminal VT4 receives a low level, the second switching unit S02 connects the first switching unit S01 and the second switching module S2;

[0144] When the third control terminal VT3 receives a low level and the fourth control terminal VT4 receives a high level, the second switching unit S02 connects the first switching unit S01 to the ground terminal GND.

[0145] Optionally, the seventh transistor M7, the eighth transistor M8, the ninth transistor M9, and the tenth transistor M10 may all be HEMTs. The load resistor RL is configured to act as a discharge resistor when the first switching unit S01 is connected to the ground terminal GND. This is to release excess power when the T / R component is in a silent state, thereby increasing signal isolation and improving the performance of the working loop.

[0146] Optionally, the seventh isolation resistor R7, the eighth isolation resistor R8, the ninth isolation resistor R9 and the tenth isolation resistor R10 are all external isolation resistors connected to the gate of their respective transistors. The fourth microstrip line TL4 and the fifth microstrip line TL5 are relatively long, which can improve the performance of the MMIC microwave switch.

[0147] See also Figure 4 In some embodiments of the present invention, the second switching module includes an eleventh transistor M11, a twelfth transistor M12, a thirteenth transistor M13, a fourteenth transistor M14, a fifteenth transistor M15, a sixteenth transistor M16, an eleventh isolation resistor R11, a twelfth isolation resistor R12, a thirteenth isolation resistor R13, a fourteenth isolation resistor R14, a fifteenth isolation resistor R15, a sixteenth isolation resistor R16, a sixth microstrip line TL6, a seventh microstrip line TL7, an eighth microstrip line TL8, a ninth microstrip line TL9, and a tenth microstrip line TL10;

[0148] an eleventh transistor M11, having a gate connected to the first end of the eleventh isolation resistor R11, a drain connected to the second end of the sixth microstrip line TL6 and the first end of the seventh microstrip line TL7, respectively, and a source connected to the ground terminal GND of the T / R component; a first end of the sixth microstrip line TL6 is connected to the first switching module S1; specifically, a first end of the sixth microstrip line TL6 is connected to the source of the tenth transistor M10;

[0149] a twelfth transistor M12, having a gate connected to the first end of the twelfth isolation resistor R12, a drain connected to the drain of the thirteenth transistor M13 and the second end of the seventh microstrip line TL7, and a source connected to the ground terminal GND;

[0150] a thirteenth transistor M13, having a gate connected to the first end of the thirteenth isolation resistor R13, and a source connected to the source of the fourteenth transistor M14 and the first end of the eighth microstrip line TL8; a second end of the eighth microstrip line TL8 is connected to the first radio frequency terminal RFC1;

[0151] a fourteenth transistor M14 having a gate connected to the first end of the fourteenth isolation resistor R14 and a drain connected to the drain of the fifteenth transistor M15 and the second end of the ninth microstrip line TL9;

[0152] a fifteenth transistor M15, having a gate connected to the first end of the fifteenth isolation resistor R15, and a source connected to the ground terminal GND;

[0153] a sixteenth transistor M16, having a gate connected to the second end of the sixteenth isolation resistor R16, a drain connected to the first end of the ninth microstrip line TL9 and the first end of the tenth microstrip line TL10, and a source connected to the ground terminal GND; a second end of the tenth microstrip line TL10 is connected to the transmitting branch output terminal RF2;

[0154] The second end of the eleventh isolation resistor R11 is connected to the second end of the twelfth isolation resistor R12 and the second end of the fourteenth isolation resistor R14 respectively, serving as the first control end VT1;

[0155] A second end of the thirteenth isolation resistor R13 is connected to the second end of the fifteenth isolation resistor R15 and the first end of the sixteenth isolation resistor R16 respectively, serving as a second control end VT2.

[0156] Optionally, when the first control terminal VT1 receives a high level and the second control terminal VT2 receives a low level, the second switching module S2 connects the first RF terminal to the transmission branch output terminal RF2;

[0157] When the first control terminal VT1 receives a low level and the second control terminal VT2 receives a high level, the second switching module S2 connects the first radio frequency terminal RFC1 to the first switching module S1.

[0158] Optionally, the eleventh transistor M11 , the twelfth transistor M12 , the thirteenth transistor M13 , the fourteenth transistor M14 , the fifteenth transistor M15 and the sixteenth transistor M16 may all be HEMTs.

[0159] Optionally, the eleventh isolation resistor R11, the twelfth isolation resistor R12, the thirteenth isolation resistor R13, the fourteenth isolation resistor R14, the fifteenth isolation resistor R15, and the sixteenth isolation resistor R16 are external isolation resistors connected to the gates of their corresponding transistors. The sixth microstrip line TL6, the seventh microstrip line TL7, the eighth microstrip line TL8, the ninth microstrip line TL9, and the tenth microstrip line TL10 are relatively long, which can improve the operating performance of the MMIC microwave switch.

[0160] See also Figure 4 In some embodiments of the present invention, the third switching module includes a seventeenth transistor M17, an eighteenth transistor M18, a nineteenth transistor M19, a twentieth transistor M20, a twenty-first transistor M21, a twenty-second transistor M22, a seventeenth isolation resistor R17, an eighteenth isolation resistor R18, a nineteenth isolation resistor R19, a twentieth isolation resistor R20, a twenty-first isolation resistor R21, a twenty-second isolation resistor R22, an eleventh microstrip line TL11, a twelfth microstrip line TL12, a thirteenth microstrip line TL13, a fourteenth microstrip line TL14, and a fifteenth microstrip line TL15;

[0161] The seventeenth transistor M17 has a gate connected to the second end of the seventeenth isolation resistor R17, a drain connected to the second end of the eleventh microstrip line TL11 and the first end of the twelfth microstrip line TL12 respectively, and a source connected to the ground terminal GND of the T / R component; the first end of the eleventh microstrip line TL11 is connected to the first switching module S1; specifically, the first end of the eleventh microstrip line TL11 is connected to the source of the sixth transistor M6.

[0162] an eighteenth transistor M18 , having a gate connected to the first end of the eighteenth isolation resistor R18 , a drain connected to the drain of the nineteenth transistor M19 and the second end of the twelfth microstrip line TL12 , and a source connected to the ground terminal GND;

[0163] a nineteenth transistor M19, having a gate connected to the first end of the nineteenth isolation resistor R19, and a source connected to the source of the twentieth transistor M20 and the first end of the thirteenth microstrip line TL13, respectively; a second end of the thirteenth microstrip line TL13 is connected to the second radio frequency port RFC2;

[0164] a twentieth transistor M20, having a gate connected to the first end of the twentieth isolation resistor R20, and a drain connected to the drain of the twenty-first transistor M21 and the second end of the fourteenth microstrip line TL14;

[0165] a twenty-first transistor M21 , having a gate connected to the first end of the twenty-first isolation resistor R21 , and a source connected to the ground terminal GND;

[0166] a twenty-second transistor M22, having a gate connected to the second end of the twenty-second isolation resistor R22, a drain connected to the first end of the fourteenth microstrip line TL14 and the second end of the fifteenth microstrip line TL15, and a source connected to the ground terminal GND; a first end of the fifteenth microstrip line TL15 is connected to the receiving branch input terminal RF3;

[0167] The second end of the nineteenth isolation resistor R16 is connected to the second end of the twenty-first isolation resistor R21 and the first end of the twenty-second isolation resistor R22 respectively, serving as the first control end VT1;

[0168] A first end of the seventeenth isolation resistor R17 is connected to a second end of the eighteenth isolation resistor R18 and a second end of the twentieth isolation resistor R20 respectively, and serves as a second control end VT2 .

[0169] Optionally, when the first control terminal VT1 receives a high level and the second control terminal VT2 receives a low level, the third switching module S3 connects the second radio frequency terminal RFC2 to the first switching module S1;

[0170] When the first control terminal VT1 receives a low level and the second control terminal VT2 receives a high level, the third switching module S3 connects the second radio frequency terminal RFC2 to the receiving branch input terminal RF3.

[0171] Optionally, the seventeenth transistor M17 , the eighteenth transistor M18 , the nineteenth transistor M19 , the twentieth transistor M20 , the twenty-first transistor M21 , and the twenty-second transistor M22 may all be HEMTs.

[0172] Optionally, the seventeenth isolation resistor R17, the eighteenth isolation resistor R18, the nineteenth isolation resistor R19, the twentieth isolation resistor R20, the twenty-first isolation resistor R21, and the twenty-second isolation resistor R22 are external isolation resistors connected to the gates of their corresponding transistors. The eleventh microstrip line TL11, the twelfth microstrip line TL12, the thirteenth microstrip line TL13, the fourteenth microstrip line TL14, and the fifteenth microstrip line TL15 have longer lengths, which can improve the operating performance of the MMIC microwave switch.

[0173] The following is based on Figure 4 The working process of the embodiment of the present invention is described as follows:

[0174] In general, the voltage levels received by the first control terminal VT1 and the second control terminal VT2 are different, the voltage levels received by the third control terminal VT3 and the fourth control terminal VT4 are different, and the HEMT is turned on at a high voltage level and turned off at a low voltage level. Figure 4 The table shows the relationship between the control logic and operating states of an MMIC microwave switch. In the table, VT1, VT2, VT3, and VT4 represent control terminals. "0" represents a low level (-15V), "1" represents a high level (0V), "transmitting state" indicates the T / R component is transmitting, "receiving state" indicates the T / R component is receiving, and "load state" indicates the T / R component is silent.

[0175] Table 1

[0176]

[0177] In the embodiment of the present invention, when control voltage is applied to VT1, VT2, VT3, and VT4 according to the control logic of Table 1, the RF3-RFC2, RFC1-RF1, RF1-RFC2, and RFC1-RF2 signal paths can be turned on or off, thereby making the T / R components operate in a receiving state, a transmitting state, or a load state, thereby realizing the transmit-receive conversion and the silent function.

[0178] The circuits for each state are as follows:

[0179] Transmitting state: RF1→RFC2→RFC1→RF2; at this time, RF1 serves as the input end of the transmitting branch.

[0180] Specifically, the emission state is as follows:

[0181] RF1→TL1→M5→TL3→TL11→TL12→M19→TL13→RFC2→...→RFC1→TL8→M14→TL9→TL10→RF2.

[0182] Receiving state: RF3→RFC2→RFC1→RF1; at this time, RF1 serves as the output end of the receiving branch.

[0183] Specifically, the receiving state is as follows:

[0184] RF3→TL15→TL14→M20→TL13→RFC2→...→RFC1→TL8→M13→TL7→TL6→TL4→M8→TL5→TL2→M2→TL1→RF1.

[0185] Load state: RF1 is grounded through the load resistor RL, and the T / R component is in a silent state. At this time, the load resistor RL is used to release loop energy and improve the working performance of the T / R component.

[0186] In the embodiment of the present invention, in actual design, the source of the HEMT switch is generally grounded when necessary.

[0187] See also Figure 4 The MMIC microwave switch of the present invention employs a filter-type lumped circuit. The principle behind this filter-type switch circuit's bandwidth expansion is that a series HEMT, a parallel HEMT switch, and a microstrip line form a filter-type switch. When a branch of the microwave switch is turned on, it acts as a low-pass filter. Increasing the order of the filter increases the bandwidth of the microwave switch.

[0188] An embodiment of the present invention further provides a T / R assembly, including the above MMIC microwave switch.

[0189] For example, see Figure 5 , which shows a schematic structural diagram of a T / R component using an MMIC microwave switch provided in an embodiment of the present invention.

[0190] Optionally, the second switching unit S02 may be located in a receiving channel or a transmitting channel.

[0191] Optionally, the T / R assembly further includes a controller; the first switching module, the second switching module and the third switching module are all controlled by the controller;

[0192] A controller, wherein the first control end is connected to the first switching module, the second switching module and the third switching module respectively, the second control end is connected to the first switching module, the second switching module and the third switching module respectively, the third control end is connected to the first switching module, and the fourth control end is connected to the first switching module;

[0193] The output levels of the first control terminal of the controller and the second control terminal of the controller are different, and the output levels of the third control terminal of the controller and the fourth control terminal of the controller are different.

[0194] In the present invention, Figure 5 In the T / R assembly shown, in addition to the microwave switch, the phase shifter, attenuator, and gain amplifier are located in the common channel, the low-noise amplifier is located in the receive channel, and the power amplifier is located in the transmit channel. To minimize the size of the T / R assembly and reduce the impact between the amplifiers in the receive and transmit channels, the RF1 RF terminal is placed at the top of the chip, the RF2 RF terminal is placed at the right end of the chip, the RF3 RF terminal is placed at the left end of the chip, and the RFC1 and RFC2 RF terminals are placed at the bottom of the chip. The chip is large in length (X-axis) and small in width (Y-axis), maintaining a large distance between the RF2 and RF3 ports. The control terminals VT1, VT2, VT3, and VT4 have pressure points on both the left and right ends of the chip to facilitate power-up. Figure 6The layout of the T / R assembly provided by the embodiment of the present application is shown.

[0195] Figure 7 is the input and output standing wave test result of the T / R assembly provided by the embodiment of the present application in the transmitting state; Figure 8 is the insertion loss test result of the T / R assembly provided by the embodiment of the present application in the transmitting state; Figure 9 is the test result of the RF3-RF1 channel isolation of the T / R assembly provided by the embodiment of the present application in the transmitting state.

[0196] Referring to Figure 7 , Figure 8 and Figure 9 , the test result in the transmitting state is as follows:

[0197] The standing wave of the RF1 port is less than 1.5, the standing wave of the RFC1 port is less than 1.6, and the insertion loss of the RF1-RFC2 path is less than 3.6 dB; the standing wave of the RF2 port is less than 1.5, the standing wave of the RFC1 port is less than 1.6, and the insertion loss of the RFC1-RF2 path is less than 2.0 dB; the RF3-RF1 channel isolation (RF3-RFC2 off, RFC1-RF1 off) is greater than 35 dB.

[0198] Figure 10 is the input and output standing wave test result of the T / R assembly provided by the embodiment of the present application in the receiving state; Figure 11 is the insertion loss test result of the T / R assembly provided by the embodiment of the present application in the receiving state; Figure 12 is the test result of the RF1-RF2 channel isolation of the T / R assembly provided by the embodiment of the present application in the receiving state.

[0199] Referring to Figure 10 , Figure 11 and Figure 12 , the test result in the receiving state is as follows:

[0200] The standing wave of the RF3 port and the RFC2 port is less than 1.5, the insertion loss of the RF3-RFC2 path is less than 1.8 dB; the standing wave of the RFC1 port and the RF1 port is less than 1.5, the insertion loss of the RFC1-RF1 path is less than 4.5 dB; the RF1-RF2 channel isolation (RF1-RFC2 off, RFC2-RF2 off) is greater than 37 dB.

[0201] Figure 13 is the RF1 port standing wave test result of the T / R assembly provided by the embodiment of the present application in the load state; Figure 14 is the test result of the channel isolation of the T / R assembly provided by the embodiment of the present application in the load state.

[0202] Referring to Figure 13 and Figure 14 , test results of load state:

[0203] The standing wave of the RF1 port is less than 1.4, the RF1-RF2 channel isolation (RF1-RFC2 off, RFC2-RF2 off) is greater than 59dB, and the RF3-RF1 channel isolation (RF3-RFC2 on, RFC1-RF1 off) is greater than 55dB.

[0204] An embodiment of the present invention further provides a radar, comprising the above T / R assembly.

[0205] The MMIC microwave switch provided in the embodiment of the present invention is manufactured using GaN HEMT monolithic microwave integrated circuit process technology. The main process steps of the GaN process include: mesa isolation, ohmic contact, gate trenching and metallization, device passivation, metal stripping, air bridge preparation, backside chemical thinning, through-hole process, etc. Before the process is carried out, the GaN process line needs to be provided with the following Figure 6 The layout of the MMIC microwave switch is shown.

[0206] use Figure 4 Design a circuit based on the topology shown, determine component parameters, and perform layout based on the characteristics of the common-leg T / R assembly. The circuit elements of the multifunctional microwave switch are fabricated on a GaN substrate using thin-film technology. Microstrip lines connect the circuit components, and microwave and DC voltage points are fabricated as external chip interfaces. DC voltage is used to control the GaN HEMT device, enabling the functional transformation of the MMIC microwave switch.

[0207] This invention utilizes multifunctional chip technology to design an MMIC microwave switch, achieving the full functionality of a switch combination on a single chip. A switching unit is added to the switch combination's receiving channel, with one branch of the switching unit connected in series with the receiving channel and the other branch connected to a load resistor to implement a muting function. This solution requires only four control signals, reducing the number of control signals and facilitating control.

[0208] The MMIC microwave switch of this invention integrates three switching modules, the first of which includes a first switching unit and a second switching unit. This highly integrated design, compact chip area, and comprehensive functionality not only enables switching between receive and transmit channels but also includes a muting function, enabling the switch to shut down both channels at any given moment. The isolation between the receive channel reaches 55dB, while the isolation between the transmit channel reaches 59dB. The MMIC microwave switch of this embodiment operates from DC to 19GHz, offering a wide bandwidth and high versatility, making it suitable for radar systems operating in mainstream frequency bands.

[0209] The application is based on a GaN HEMT device and provides a band-wide, low-loss and compactly-structured MMIC multifunctional microwave switch with a mute function. The MMIC microwave switch is mainly used to realize the transmitting-receiving conversion and mute function of a T / R module, i.e. to switch the receiving state, transmitting state and load state of the T / R module, and can be applied to modern radar systems.

[0210] The circuit topology of the MMIC microwave switch can be applied to other semiconductor processes such as GaAs, CMOS and SiGe. The MMIC microwave switch has a wide application prospect in the T / R module of a modern radar system.

[0211] The above examples are only used to illustrate the technical solutions of the application, but not limit the application; although the application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that the technical solutions recorded in the foregoing examples can be modified or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the application.

Claims

1. An MMIC microwave switch, characterized in that: Applied to T / R components, the MMIC microwave switch includes: a first switching module, a second switching module and a third switching module; The first switching module is respectively connected to the common terminal of the T / R component, the second switching module, the ground terminal of the T / R component, and the third switching module; the second switching module is respectively connected to the output terminal of the transmitting branch of the T / R component and the first RF terminal of the T / R component; the third switching module is respectively connected to the input terminal of the receiving branch of the T / R component and the second RF terminal of the T / R component; wherein the first RF terminal and the second RF terminal are connected through a common amplitude and phase control circuit module of the T / R component; The first switching module is used to selectively connect the common terminal to one of the second switching module, the third switching module, and the ground terminal; The second switching module is configured to selectively connect the first RF end to the transmit branch output end or the first switching module; The third switching module is configured to selectively connect the second RF end to the receiving branch input end or the first switching module; Wherein, when the first switching module connects the common terminal to the ground terminal or directly hangs the common terminal, the T / R component is in a silent state; When the first switching module connects the common terminal to the third switching module, the second switching module connects the first RF terminal to the output terminal of the transmitting branch, and the third switching module connects the second RF terminal to the first switching module, the T / R component is in a transmitting state; When the first switching module connects the common terminal to the second switching module, the second switching module connects the first RF terminal to the first switching module, and the third switching module connects the second RF terminal to the receiving branch input terminal, the T / R component is in a receiving state; The first switching module includes a first switching unit and a second switching unit; The first switching unit is connected to the common terminal, the second switching unit and the third switching module respectively; the second switching unit is connected to the second switching module and the ground terminal respectively; The first switching unit is configured to selectively connect the common end to the second switching unit or the third switching module; The second switching unit is configured to selectively connect the first switching unit to the second switching module or the ground terminal; When the first switching unit connects the common terminal to the second switching unit, and the second switching unit connects the first switching unit to the ground terminal, the T / R component is in a silent state.

2. The MMIC microwave switch according to claim 1, wherein: The first switching unit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first isolation resistor, a second isolation resistor, a third isolation resistor, a fourth isolation resistor, a fifth isolation resistor, a sixth isolation resistor, a first microstrip line, a second microstrip line and a third microstrip line; The first transistor has a gate connected to the second end of the first isolation resistor, a drain connected to the drain of the second transistor and the first end of the second microstrip line respectively, and a source connected to the ground end; The second transistor has a gate connected to the second end of the second isolation resistor, and a source connected to the second end of the first microstrip line and the source of the fifth transistor respectively; The first end of the first microstrip line is connected to the common end; The third transistor has a gate connected to the second end of the third isolation resistor, a drain connected to the second end of the second microstrip line and the second switching unit respectively, and a source connected to the ground end; The fourth transistor has a gate connected to the second end of the fourth isolation resistor, a drain connected to the drain of the fifth transistor and the first end of the third microstrip line respectively, and a source connected to the ground end; the gate of the fifth transistor is connected to the second end of the fifth isolation resistor; The sixth transistor has a gate connected to the second end of the sixth isolation resistor, a drain connected to the second end of the third microstrip line and the third switching module respectively, and a source connected to the ground end; The first end of the first isolation resistor is connected to the first end of the third isolation resistor and the first end of the fifth isolation resistor respectively, serving as a first control end; The first end of the second isolation resistor is connected to the first end of the fourth isolation resistor and the first end of the sixth isolation resistor respectively, serving as a second control end; Wherein, when the first control end receives a high level and the second control end receives a low level, the first switching unit connects the common end to the third switching module; When the first control terminal receives a low level and the second control terminal receives a high level, the first switching unit connects the common terminal and the second switching unit.

3. The MMIC microwave switch according to claim 1, wherein: The second switching unit includes a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, a seventh isolation resistor, an eighth isolation resistor, a ninth isolation resistor, a tenth isolation resistor, a load resistor, a fourth microstrip line, and a fifth microstrip line; The seventh transistor has a gate connected to the second end of the seventh isolation resistor, a drain connected to the drain of the eighth transistor and the first end of the fourth microstrip line respectively, and a source connected to the ground end; The eighth transistor has a gate connected to the second end of the eighth isolation resistor, and a source connected to the source of the ninth transistor and the second end of the fifth microstrip line respectively; the first end of the fifth microstrip line is connected to the first switching unit; The ninth transistor has a gate connected to the second end of the ninth isolation resistor and a drain connected to the first end of the load resistor; the second end of the load resistor is connected to the ground end; The tenth transistor has a gate connected to the second end of the tenth isolation resistor, a drain connected to the second end of the fourth microstrip line and the second switching module respectively, and a source connected to the ground end; The first end of the eighth isolation resistor serves as the third control end; The first end of the seventh isolation resistor is connected to the first end of the ninth isolation resistor and the first end of the tenth isolation resistor respectively, serving as a fourth control end; Wherein, when the third control terminal receives a high level and the fourth control terminal receives a low level, the second switching unit connects the first switching unit and the second switching module; When the third control terminal receives a low level and the fourth control terminal receives a high level, the second switching unit connects the first switching unit to the ground terminal.

4. The MMIC microwave switch according to any one of claims 1 to 3, characterized in that: The second switching module includes an eleventh transistor, a twelfth transistor, a thirteenth transistor, a fourteenth transistor, a fifteenth transistor, a sixteenth transistor, an eleventh isolation resistor, a twelfth isolation resistor, a thirteenth isolation resistor, a fourteenth isolation resistor, a fifteenth isolation resistor, a sixteenth isolation resistor, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth microstrip line, and a tenth microstrip line; The eleventh transistor has a gate connected to the first end of the eleventh isolation resistor, a drain connected to the second end of the sixth microstrip line and the first end of the seventh microstrip line respectively, and a source connected to the ground end of the T / R component; the first end of the sixth microstrip line is connected to the first switching module; The twelfth transistor has a gate connected to the first end of the twelfth isolation resistor, a drain connected to the drain of the thirteenth transistor and the second end of the seventh microstrip line respectively, and a source connected to the ground end; The thirteenth transistor has a gate connected to the first end of the thirteenth isolation resistor, and a source connected to the source of the fourteenth transistor and the first end of the eighth microstrip line respectively; the second end of the eighth microstrip line is connected to the first RF end; The fourteenth transistor has a gate connected to the first end of the fourteenth isolation resistor, and a drain connected to the drain of the fifteenth transistor and the second end of the ninth microstrip line respectively; The fifteenth transistor has a gate connected to the first end of the fifteenth isolation resistor and a source connected to the ground end; The sixteenth transistor has a gate connected to the second end of the sixteenth isolation resistor, a drain connected to the first end of the ninth microstrip line and the first end of the tenth microstrip line respectively, and a source connected to the ground end; The second end of the tenth microstrip line is connected to the output end of the transmitting branch; The second end of the eleventh isolation resistor is connected to the second end of the twelfth isolation resistor and the second end of the fourteenth isolation resistor respectively, serving as a first control end; The second end of the thirteenth isolation resistor is connected to the second end of the fifteenth isolation resistor and the first end of the sixteenth isolation resistor respectively, serving as a second control end; When the first control terminal receives a high level and the second control terminal receives a low level, the second switching module connects the first RF terminal to the output terminal of the transmitting branch; When the first control end receives a low level and the second control end receives a high level, the second switching module connects the first RF end to the first switching module.

5. The MMIC microwave switch according to any one of claims 1 to 3, characterized in that: The third switching module includes a seventeenth transistor, an eighteenth transistor, a nineteenth transistor, a twentieth transistor, a twenty-first transistor, a twenty-second transistor, a seventeenth isolation resistor, an eighteenth isolation resistor, a nineteenth isolation resistor, a twentieth isolation resistor, a twenty-first isolation resistor, a twenty-second isolation resistor, an eleventh microstrip line, a twelfth microstrip line, a thirteenth microstrip line, a fourteenth microstrip line, and a fifteenth microstrip line; The seventeenth transistor has a gate connected to the second end of the seventeenth isolation resistor, a drain connected to the second end of the eleventh microstrip line and the first end of the twelfth microstrip line respectively, and a source connected to the ground end of the T / R component; the first end of the eleventh microstrip line is connected to the first switching module; The eighteenth transistor has a gate connected to the first end of the eighteenth isolation resistor, a drain connected to the drain of the nineteenth transistor and the second end of the twelfth microstrip line respectively, and a source connected to the ground end; The nineteenth transistor has a gate connected to the first end of the nineteenth isolation resistor, and a source connected to the source of the twentieth transistor and the first end of the thirteenth microstrip line respectively; the second end of the thirteenth microstrip line is connected to the second RF port; the twentieth transistor, having a gate connected to the first end of the twentieth isolation resistor, and a drain connected to the drain of the twenty-first transistor and the second end of the fourteenth microstrip line respectively; The twenty-first transistor has a gate connected to the first end of the twenty-first isolation resistor and a source connected to the ground end; The twenty-second transistor has a gate connected to the second end of the twenty-second isolation resistor, a drain connected to the first end of the fourteenth microstrip line and the second end of the fifteenth microstrip line respectively, and a source connected to the ground end; the first end of the fifteenth microstrip line is connected to the input end of the receiving branch; The second end of the nineteenth isolation resistor is connected to the second end of the twenty-first isolation resistor and the first end of the twenty-second isolation resistor respectively, as a first control end; The first end of the seventeenth isolation resistor is connected to the second end of the eighteenth isolation resistor and the second end of the twentieth isolation resistor respectively, as a second control end; When the first control terminal receives a high level and the second control terminal receives a low level, the third switching module connects the second RF terminal to the first switching module; When the first control terminal receives a low level and the second control terminal receives a high level, the third switching module connects the second RF terminal to the receiving branch input terminal.

6. A T / R assembly, characterized in that: The method comprises the MMIC microwave switch according to any one of claims 1 to 5.

7. The T / R assembly according to claim 6, wherein: The T / R assembly further includes a controller; the first switching module, the second switching module and the third switching module are all controlled by the controller; The controller, the first control end is connected to the first switching module, the second switching module and the third switching module respectively, the second control end is connected to the first switching module, the second switching module and the third switching module respectively, the third control end is connected to the first switching module, and the fourth control end is connected to the first switching module; The output levels of the first control terminal of the controller and the second control terminal of the controller are different, and the output levels of the third control terminal of the controller and the fourth control terminal of the controller are different.

8. A radar, characterized in that: Comprising the T / R assembly as claimed in claim 6 or 7.

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