Fast electronic switch

Abstract

The invention relates to a switch, in particular for use as a DC switch, comprising a semiconductor switch that can be turned off and a series circuit, wherein the series circuit is arranged in parallel with the semiconductor switch that can be turned off and comprises a first resistor, a capacitor and a second resistor, wherein the first resistor and the second resistor are together constructed as a two-wire resistor in order to form a commutation circuit with particularly low inductance.

Description

Technical Field

[0001] The present invention relates to an electronic switch having at least one turn-off semiconductor switch and a series circuit arranged in parallel with the semiconductor switch, the series circuit including a capacitor for absorbing energy during the turn-off process. Background Technology

[0002] Currently, electricity is primarily supplied via AC power grids. Its advantage lies in the ability to generate different voltage levels using transformers. With increasingly inexpensive semiconductors available on the market, different voltage levels can also be easily generated for DC power grids, making energy supply via DC grids, especially within industrial power grids, particularly economical.

[0003] In future industrial plants, DC power grids aim to reduce losses, ensure direct energy exchange between converters, energy storage devices, and loads, and achieve greater robustness. For example, small DC grids with varying cable lengths can operate between different load outputs and feeders. The short cable lengths result in very low longitudinal inductance in the leads, allowing fault currents to potentially have a very steep rise. Similarly, DC grids lack the reactive resistance present in AC grids, which limits the maximum short-circuit current. This necessitates very rapid fault identification and shutdown in case of fault conditions. Mechanical switches often cannot meet these requirements. Therefore, so-called electronic switches with semiconductor switches are introduced. These are also known as solid-state circuit breakers. Compared to mechanical switches, these switches are characterized by exceptionally fast switching, typically on the order of 100 ns.

[0004] A switching device for disconnecting a current path is known from EP 3 367 567 A1. This document relates to a switching device for separating a current path from a DC power grid, including source-side and load-side inductors. The switching device includes at least two switching modules connected in series, wherein each of these switching modules includes at least one controllable semiconductor switching element, and a series circuit consisting of a resistor and a capacitor is connected in parallel with the semiconductor switching element. Summary of the Invention

[0005] Therefore, the technical problem to be solved by the present invention is to improve electronic switches, particularly in terms of their switching characteristics. The above-mentioned technical problem is solved by an electronic switch having the features of claim 1.

[0006] The electronic switch according to the invention includes a turn-off semiconductor switch and a series circuit arranged in parallel with the turn-off semiconductor switch, and includes a first resistor, a capacitor, and a second resistor. Here, the first resistor and the second resistor are together configured as a two-wire resistor.

[0007] A turn-off power semiconductor switch can be a switch capable of interrupting current in only one direction. This is particularly suitable for loads that are not back-fed and therefore only conduct current in one direction. Similarly, a turn-off power semiconductor switch can be used to interrupt current in both directions.

[0008] Turn-off semiconductor switches are sensitive to voltage spikes that occur when current is turned on, and especially when it is turned off. Due to inductance present in the DC power grid, such as from the parasitic inductance of cables, current variations and, particularly, current interruptions, can lead to high voltages. These high voltages can then partially drop across the turn-off semiconductor switch, potentially damaging it or reducing its lifespan. Turn-off semiconductor switches can be reliably protected from overvoltages and voltage spikes by using a series circuit consisting of capacitors and two-wire resistors arranged in parallel.

[0009] Here, the transition from the off state to the on state of the switch is called turning on, while the transition from the on state to the off state of the switch is called turning off or turning off.

[0010] Based on its current-voltage characteristic curve, when the turn-off semiconductor switch is turned off, part of the voltage drops across the resistor and another part drops across the capacitor. This creates a voltage across the capacitor, which is added to the voltage across the resistor. According to the equation u(t) = L*di / dt, the reverse voltage applied through the capacitor decreases due to the load current, and due to the capacitor's characteristic i(t) = C*du / dt, an increasingly larger reverse voltage is built across the capacitor. In any case, this results in a reverse voltage greater than the driving DC voltage, because the reverse voltage formed by the current flowing through the capacitor inevitably and reliably blocks current flow after a certain period.

[0011] Advantageously, an electronic switch, particularly for DC connections, is provided by means of the structure according to the invention, wherein the resistor arranged in series with the parallel capacitor has particularly low inductance. This provides an electronic switch that is also capable of rapidly commutating high short-circuit currents into the capacitor and thus capable of turning off these short-circuit currents particularly quickly.

[0012] It is particularly advantageous that the electronic switch is used in DC power grids at medium voltage levels, i.e., in the range of several thousand volts and at least in the range of several thousand amperes of current during short circuits. However, the switch can also be used in DC power grids at low voltage levels, i.e., DC voltages less than 1500V. Therefore, it is preferable to use an electronic DC switch.

[0013] For a low-inductance structure, it is important that the first and second resistors, which together form the bi-wire resistance, are electrically arranged on both sides of the capacitor; that is, in other words, the order of first resistor, capacitor, and second resistor must be maintained, because only in this way can a low-inductance structure be achieved. In this case, the first and second resistors are physically arranged side by side such that the directions of the current in the two resistors are opposite to each other. As a result, the generated magnetic fields are largely canceled out, and the entire component, i.e., the bi-wire resistance, achieves a very low inductance.

[0014] Advantageous designs of the device according to the invention are derived from the dependent claims of claim 1. Here, the embodiment according to claim 1 can be combined with features of one of the dependent claims, or preferably also with features from multiple dependent claims. Therefore, the following features can also be additionally provided for the electronic switch:

[0015] Two-wire resistors can include ferrous alloys, particularly V4A steel. Here, V4A steel should represent CrNiMo steel. These ferrous alloys are non-magnetic on the one hand and have a significantly higher resistivity compared to copper or aluminum on the other, which significantly simplifies the construction of two-wire resistors. Alternatively, two-wire resistors can include other resistance alloys as materials, such as constantan (Konstantan), and are particularly constructed from this material.

[0016] Of particular advantage, two-wire resistors can thus have a thickness in the millimeter range without achieving excessively low resistance. This enables a properly stable connection with semiconductor switches and capacitors. In contrast, two-wire resistors made of copper are thin as a film because their width cannot be very small without increasing inductance.

[0017] The two resistors that together form a bipolar resistor can be manufactured by stamping. Stamping is advantageously a simple, low-cost, and flexible form of manufacturing, and it can also be used when the resistor is used as a guide and must bear the mechanical load of the capacitor terminals, i.e., when the material thickness is in the millimeter range.

[0018] The first and second resistors can each have a rectangular shape, with two opposing sides bent at 90° to one side. Thus, for each resistor, a right-angled C or right-angled bracket "[" cross-section is obtained. The two resistors are preferably arranged back-to-back, resulting in a "][" shaped cross-section. Here, the bent end members are used for fixing to the semiconductor switch and the capacitor, while the back-to-back faces constitute the actual resistor. If the material thickness is sufficient, i.e., has sufficient mechanical load-bearing capacity, the two-wire resistor can also constitute the sole mechanical connection between the semiconductor switch and the capacitor in addition to the electrical connection.

[0019] In the replacement construction, the two-wire resistor also has a cross-section in the shape of a "][", however, it no longer has a rectangular shape in the top view. More precisely, the resistor tapers towards the capacitor, so that the two resistors have a trapezoidal or rectangular shape with a connecting trapezoid in the top view.

[0020] - In another alternative structure, the resistor has an L-shaped cross-section. To form a two-wire resistor, two resistors are interposed and arranged to form a double-walled L-shape. One arm of this L-shape rests on the junction of the semiconductor switch, and the other arm extends correspondingly from the surface of the semiconductor switch and is used to connect a capacitor. If the capacitor has an elongated cylindrical shape, its cylindrical axis is parallel to the surface of the semiconductor switch in the case of this resistor shape, rather than protruding perpendicularly from the surface as in the aforementioned alternative with a cross-section of "][". Therefore, this alternative is space-saving.

[0021] What all mechanical devices have in common is the double-wire structure of the resistive surface.

[0022] Because all the line connections introduce their own inductance into the circuit, the electronic switch connected in parallel with the two-wire resistor preferably includes exactly one single turn-off semiconductor switch. If the resistor is also the direct electrical connection between the semiconductor switch and the capacitor, then in the commutation circuit consisting of the semiconductor switch, resistor, and capacitor, all electrical lines that also have inductance and cause high voltage during turn-off and may delay current commutation are effectively eliminated. This advantageously achieves a low-inductance commutation circuit, which has been very difficult to achieve using only two semiconductor switches connected in parallel with the two-wire resistor and capacitor.

[0023] Even if an electronic switch contains only exactly one semiconductor switch, multiple copies of the electronic switch can be assembled into a master switch. For example, multiple electronic switches can be connected in series.

[0024] Alternatively, the switch may comprise exactly one power semiconductor module. A power semiconductor module is a common structural form of power semiconductors today and includes one or more individual semiconductor switches within a common housing. In such a module, for example, two semiconductor switches can be arranged in series, two in parallel, two anti-series, or two anti-parallel. Because the wiring connections within such a module are short and therefore low inductance, very low-inductance switching can be achieved even if the module itself contains more than one semiconductor switch. For example, low-inductance bidirectional switches can thus be provided.

[0025] - In another alternative, the switch comprises multiple power semiconductors in a plurality of power semiconductor modules, wherein the power semiconductor modules are connected in series or anti-series.

[0026] - Commercially available turn-off semiconductor switches typically only turn off current in one direction. Typical examples of such turn-off semiconductor switches are IGBTs or MOSFETs. If, when using such turn-off semiconductor switches, it is desirable to be able to turn off current in both directions, then two of these turn-off semiconductor switches are used. This allows the electronic switches to turn off the two polarities of the current. The switches are arranged such that the current from the first terminal to the second terminal of the electronic switch can be guided and turned off by the first turn-off semiconductor switch, and the current from the second terminal to the first terminal can be guided and turned off by the second turn-off semiconductor switch. In the case where diodes are arranged in parallel with the switching elements of the semiconductor switches (diodes enable reverse conduction of the turn-off semiconductor switch), the two semiconductor switches are arranged in a series circuit. Because the switching elements of the two semiconductor switches guide and turn off currents of different polarities respectively, this series circuit is also called an anti-series circuit. Here, the two semiconductor switches rotate relative to each other about the collector-emitter or drain-source terminals. Therefore, for bidirectional operation, two or more electronic switches can be connected in anti-series, where an even number of electronic switches are typically used, with half associated with one current direction and the other half associated with the other current direction.

[0027] The first and second resistors can be arranged separately from each other using an insulating plate or film, and pressed together by a spiral connection. This requires that the resistors have planar regions that can be pressed together. Planar regions are advantageous because they allow the resistors to be arranged close together, achieving low inductance. When the semiconductor switch is turned off and a relatively large current, such as a short-circuit current in the kA range, occurs, a considerable mechanical force arises between the two resistors, causing them to separate. However, increasing the distance between the resistors increases inductance. Therefore, it is advantageous for the resistors to maintain a small gap by pressing them together.

[0028] - The first and / or second resistors can have tortuous sub-regions. In other words, there exists a sub-region in the resistor in question where the material is shaped such that the current path is tortuous. The material shaping can be achieved, for example, by suitable stamping. Thus, or by other means, such as introducing gaps into the material of the resistor, the gaps force the current path to be tortuous. If a tortuous shape is introduced in the rectangular surface that guides the current, the current must flow along the tortuous shape, thereby lengthening the current path and simultaneously reducing its cross-section. Thus, the resistance is significantly improved relative to the free current flow in the rectangular surface. Given the physical dimensions of the resistor and the minimum thickness required by mechanical strength, this allows for resistance adjustment within the range required by the electronic switch. The tortuous shape is suitably arranged such that the current is canceled out by the tortuosity. Therefore, the currents in the two plates flow in completely opposite directions so as to effectively cancel out the total magnetic field. The magnitude of the total magnetic field is then responsible for the remaining inductance.

[0029] The first and second resistors can be directly screwed onto the terminals of the turn-off semiconductor switch. The capacitor can also be directly screwed onto the first and second resistors. This results in a connection with very low inductance.

[0030] - The electronic switch can be a medium-voltage DC switch or a low-voltage DC switch. As a low-voltage DC switch, it can be used, for example, in marine electrical networks at voltages of approximately 500V to 1500V. As a medium-voltage DC switch, it can be used at voltages from 1500V DC to greater than 10kV DC. The low inductance and therefore high switching speed of the subgrid during disconnection are particularly advantageous in situations where the subgrid must be disconnected quickly in case of a fault, such as in marine applications.

[0031] - Switches can also be used in "multiple" series circuits, that is, circuits in which multiple electronic switches are connected in series. application( In high-voltage direct current (HVDC) transmission, the DC voltage can then reach up to 1000kV. Attached Figure Description

[0032] The invention will now be described and explained in more detail with reference to the embodiments shown in the accompanying drawings. In the drawings:

[0033] Figure 1 A DC power grid with electronic switches is shown.

[0034] Figure 2 An embodiment of an electronic switch with low inductance resistance is shown.

[0035] Figure 3 A cross-section of the electronic switch is shown.

[0036] Figure 4 A spatial view of the sub-resistors with low inductance resistance is shown.

[0037] Figure 5 A spatial view of the electronic switch is shown.

[0038] Figure 6 and Figure 7 A spatial view of the alternative shape of the sub-resistor is shown.

[0039] Figure 8 An electronic switch with multiple switch blocks is shown.

[0040] Figure 9 A two-way electronic switch is shown. Detailed Implementation

[0041] Figure 1 A DC power grid 33, also known as a DC voltage grid, is shown. The DC power grid supplies power to the load 31 by a DC source 30 (also known as a DC voltage source). This load may be, for example, a driver with a converter, wherein the converter is connected to the DC source 30 via an electronic switch 1 through its intermediate circuit.

[0042] An electronic switch 1, having a first connector 12 and a second connector 13, is connected here to the line of the DC power grid 33. The electronic switch 1 can shut off the current flowing in the line. Depending on the type of electronic switch 1, it can shut off the current between the first and second connectors 12, 13 in only one direction or in both directions.

[0043] The line between the DC source 30 and the load 31 can exhibit completely different characteristics in terms of its inductive properties. This inductive characteristic is shown in the figure by means of inductor 32. Inductor 32 can exhibit very small values ​​because there is no transformer (the current is limited by the inductance of a transformer). On the other hand, the inductance can also exhibit very large values ​​due to the large cable length.

[0044] For electronic switch 1, the following requirements arise: due to its small inductance and the associated large current changes, especially during a short circuit, the electronic switch should possess very fast switching characteristics, thereby reliably controlling, for example, the unacceptably high current generated during a short circuit. Furthermore, electronic switch 1 must also be able to operate reliably with high inductance. At the same current, a large inductance stores significantly more energy. This energy must be stored or depleted when the short circuit is broken; otherwise, overvoltage will be generated on the circuit breaker.

[0045] Figure 2An embodiment of an electronic switch 1 with overvoltage limiting is shown. A first series circuit 10 is arranged in parallel with a turn-off semiconductor switch 21. This first series circuit 10 has a capacitor 3 and two sub-resistors 4a and 4b arranged in the series circuit. If the turn-off semiconductor switch 21 turns off the current between the terminals 12 and 13 of the electronic switch 1, the current driven by the inductor is switched onto the first series circuit 10. The capacitor 3 and the resistors absorb energy from the inductor. As a result, the voltage generated on the switch 1 is reduced, and damage to the switch caused by the large current dissipation resulting from the turn-off is avoided.

[0046] Here, the two sub-resistors 4a and 4b are as follows: Figure 2 As shown and as in Figure 3 As shown more clearly in the diagram, they are arranged spatially adjacently. Here, this arrangement ensures that the current flowing through the sub-resistors 4a and 4b is as follows: Figure 2 As indicated by the arrows, the directions are reversed. Therefore, the magnetic field caused by the current flowing through the sub-resistors is largely canceled out. Thus, the sub-resistors 4a and 4b together form a two-wire resistor 4. Resistor 4 is therefore very low inductance, and the commutation of current into the series circuit 10 and thus into capacitor 3 can therefore occur very quickly. Because the currents in the two resistors 4a and 4b must be reversed to achieve the low inductance of resistor 4, one of the two resistors 4a and 4b must be placed upstream of capacitor 3 in the series circuit 10, and the other resistor must be placed downstream of capacitor 3. In other words, the sequence RCR must be followed in the series circuit 10.

[0047] Possibility of constructing a two-wire resistor 4 Figure 3 The cross-sectional view is shown. Here, two sub-resistors 4a and 4b are shown in the cross-section and each has a right-angled C shape or a right-angled bracket "[". Here, the two sub-resistors 4a and 4b are arranged with their backs facing each other in this shape, so that in Figure 3 The cross-section shown yields two separate, pointing right-angled brackets "][". At end regions 41a and 41b, each of the sub-resistors 4a and 4b is mounted to the contact surface of the semiconductor switch 21 via a threaded connection 5. Correspondingly, the other end regions 42a and 42b are connected to the capacitor 3 via threaded connectors 5. The use of V4A steel as the material for the resistor 4 results in a mechanically stable structure, where the capacitor 3 is supported by the resistor 4. The thickness d of the resistor 4 is in the range of millimeters, ideally between 0.5 mm and 3 mm.

[0048] In other embodiments, other materials for the sub-resistors 4a and 4b can be used, such as the resistive material Konstantan. Non-metallic materials such as carbon can also be used. Here, the thickness d of the sub-resistors 4a and 4b can be greater than or less than the values ​​mentioned above.

[0049] Figure 4 A spatial view of one of the sub-resistors 4a and 4b is shown. The resistors 4a and 4b, manufactured by stamping, include a zigzag structure 6 in the central region. In this zigzag structure 6, the current is forced onto a zigzag track, thereby significantly increasing the conductor length and simultaneously reducing the conductor width. Therefore, the resistance of the resistors 4a and 4b is increased overall by the zigzag structure 6. This is advantageous for setting the desired resistance between 0.1 ohms and 0.5 ohms. Without the zigzag structure 6, this would require a small material thickness, making mechanical stability more difficult to achieve. Figure 4 Hole 7 for threaded connection with semiconductor switch 21 and hole 8 for connection with capacitor 3 are also shown. The dimensions of the back of resistors 4a and 4b are preferably between 10cm × 10cm and 20cm × 20cm.

[0050] Figure 5 The complete structure of the electronic switch 1 is shown in a spatial view. The electronic switch 1 includes a semiconductor switch module 51 arranged on a cooler 52. A resistor 4 is arranged on the upper side of the semiconductor switch module 51, and a capacitor 3 is arranged on the resistor. When the current flowing through the electronic switch 1 is turned off, a high current commutates into the resistor 4 for a short time. This generates a significant mechanical force on the sub-resistors 4a and 4b, the direction of which causes the sub-resistors 4a and 4b to separate from each other. However, to obtain a low-inductance structure, the spacing between the sub-resistors 4a and 4b must be kept small. Therefore, the two sub-resistors 4a and 4b are pressed together by a spirally connected plastic plate 53, wherein an insulating film 9 is arranged between the resistors 4a and 4b. This ensures that the mechanical structure remains unchanged even when turned off.

[0051] Figure 6 The alternative structure for resistor 4 is shown. Here, the shapes of sub-resistors 4a and 4b are changed. (As shown in...) Figure 5As shown in the diagram, the sub-resistors have first end regions 41a, 41b, which are shaped to be mounted on the semiconductor switch module 51 and have holes 7. A rectangular region 61 adjacent to the trapezoidal region 62 is connected to the end regions 41a, 41b. In the trapezoidal region, the sub-resistors 4a, 4b gradually taper toward the second end regions 42a, 42b, which thus have a reduced width and have only one hole 8 for connecting the capacitor 3 at each of the sub-resistors 4a, 4b. As in all these resistors 4, the sub-resistors 4a, 4b are separated by an insulating film 9, which is shaped similarly to the sub-resistors 4a, 4b, i.e., also gradually taper.

[0052] Figure 6 The gradually tapering shape of the sub-resistors 4a and 4b increases their resistance. Nevertheless, it is advantageous to also provide a zigzag shape in these sub-resistors 4a and 4b so as to bring the resistance into the range of 0.1 ohms to 0.5 ohms, which is suitable for the function of the electronic switch.

[0053] Figure 7 An alternative structure for resistor 4 is shown. Here, the shapes of sub-resistors 4a and 4b are changed. In the shapes of sub-resistors 4a and 4b described so far, the shape of two right-angled brackets "][" is realized in the cross-section, and according to... Figure 7 The shape is an LL shape, that is, the cross-section corresponds to two interlocking L-shapes, wherein one of the sub-resistors 4a and 4b forms an external L, and the other of the sub-resistors 4a and 4b forms an internal L. Here, the first leg of the L-shape is used to connect to the semiconductor switch module 51 and also has holes 7a and 7b. Because the sub-resistors 4a and 4b must be stacked on top of each other, the holes 7a and 7b are different so that the external sub-resistor 4a can be connected to the hole 7b on one side and the internal sub-resistor 4b can be connected to the hole 7a on the other side.

[0054] The second leg forms a guide rail toward the capacitor 3 and has holes 8a and 8b at the ends for threading the capacitor 3. The holes 8a and 8b are also designed differently so as to contact the built-in sub-resistor 4b once and the external sub-resistor 4a once. Figure 7 The resistor 4 also has an insulating film 9 arranged between the sub-resistors 4a and 4b for electrical insulation of the sub-resistors 4a and 4b.

[0055] To meet the different requirements of the DC power grid 33, it is feasible to connect two or more semiconductor switches 21 (each having an associated series circuit consisting of sub-resistors 4a, 4b and capacitor 3) in series. This electronic switch 1 in... Figure 8As shown in the diagram. Therefore, instead of, for example, multiple semiconductor switches 21 connected in series and capacitor 3 connected in parallel with them, the entire block consisting of semiconductor switches 21 and a series circuit (which consists of sub-resistors 4a, 4b and capacitor 3) is multiplied and connected in series with each other. Thus, the very low inductance of the resistor 4 on the corresponding semiconductor switch 21 is maintained. If multiple semiconductor switches 21 were connected in parallel with capacitor 3, additional conductors or buses would be needed in the commutation circuit, which would increase the inductance.

[0056] Conversely, the connection between the block consisting of semiconductor switch 21 and the associated series circuit (which consists of sub-resistors 4a, 4b and capacitor 3) and the next such block can be highly inductive without any particular disadvantage for electronic switch 1.

[0057] In order to provide a bidirectional electronic switch 1 and thus be able to cut off current in both directions, from Figure 8 The visible electronic switch 1 can be supplemented by multiple additional blocks, which consist of semiconductor switches 21 and associated series circuits. These series circuits comprise sub-resistors 4a, 4b and a capacitor 3, wherein the semiconductor switches 21 are arranged in anti-series with the existing semiconductor switches 21. Preferably, the same number of blocks are used for both current directions. This electronic switch 1... Figure 9 As shown in the figure. For example, an electronic switch 1 thus formed may have eight blocks for a first current direction and eight additional blocks for another current direction.

[0058] In summary, the present invention relates to an electronic switch having one, particularly exactly one, turn-off semiconductor switch, wherein the electronic switch has a capacitor and a resistor, wherein the capacitor and resistor are arranged in a series circuit, and wherein the series circuit consisting of the capacitor and resistor is arranged in parallel with the turn-off semiconductor switch. To improve the electronic switch, particularly in terms of its switching characteristics, it is proposed that the resistor comprises two sub-resistors and is constructed as a two-wire resistor, wherein the elements in the series circuit are arranged in the order of sub-resistor, capacitor, sub-resistor.

[0059] List of reference numerals

[0060] 1 Electronic switch

[0061] Connectors 12 and 13

[0062] 31 Load

[0063] 33 DC power grid

[0064] 32 Line Inductance

[0065] 30 DC voltage source

[0066] 3 Capacitors

[0067] 4. Resistance

[0068] 4a, 4b sub-resistors

[0069] 21 Semiconductor Switch

[0070] 5. Threaded connection

[0071] 41a, b End regions

[0072] 42a, b End regions

[0073] d Thickness

[0074] 6. Twisted area

[0075] 7, 8 holes

[0076] 52 Cooler

[0077] 51 Semiconductor Switch Module

[0078] 53 Plastic sheet

[0079] 61 Rectangular area

[0080] 62 Trapezoidal region

[0081] 63a, b end regions

[0082] Holes 7a and 7b

[0083] Holes 8a and 8b

[0084] 9. Insulating film

Claims

1. An electronic switch (1), comprising: - a semiconductor switch (21) which can be turned off, a series circuit, which is arranged in parallel with the semiconductor switch (21) that can be turned off and comprises a first resistor (4a), a capacitor (3) and a second resistor (4b), wherein the first resistor, the capacitor and the second resistor are arranged in the sequence RCR, wherein: The first resistor and the second resistor (4a, 4b) are together constructed as a two-wire resistor (4), The first resistor and the second resistor (4a, 4b) each have a meander-shaped sub-region (6), wherein the meander-shaped sub-regions (6) are arranged relative to one another in such a way that the meanders again form a double-line arrangement.

2. The electronic switch (1) according to claim 1, wherein: The two-wire resistor (4) comprises at least one of the following materials: iron alloy; constantan; carbon.

3. The electronic switch (1) according to claim 1 or 2, wherein: The first resistor and the second resistor (4a, 4b) are produced by punching or laser beam cutting.

4. The electronic switch (1) according to claim 1 or 2, wherein: The two-wire resistor (4) is designed as a mechanical support for the capacitor (3).

5. The electronic switch (1) according to claim 1 or 2, wherein: The first resistor and the second resistor (4a, 4b) each have a quadrilateral shape, wherein two opposite sides are bent toward one side by 90°.

6. The electronic switch (1) according to claim 5, wherein: The first resistor and the second resistor (4a, 4b) are placed against one another, separated by an insulating plate or insulating film (9), and are pressed against one another by means of screw-connected plates (53).

7. The electronic switch (1) according to claim 5, wherein: The first resistor and the second resistor (4a, 4b) have a "]["-shaped cross section in common.

8. The electronic switch (1) according to claim 1 or 2, wherein: The first resistor and the second resistor (4a, 4b) are each designed in an L-shape, wherein two L-shapes are placed in one another to form the two-wire resistor (4).

9. The electronic switch (1) according to claim 1 or 2, wherein: The first resistor and the second resistor (4a, 4b) are screwed directly to the terminals of the semiconductor switch (21) which can be turned off.

10. The electronic switch (1) according to claim 1 or 2, wherein: The capacitor (3) is directly spirally connected to the first and second resistors (4a, 4b).

11. A switching device having a first number of electronic switches (1) according to any one of the preceding claims, which are connected in series with one another.

12. The switching device according to claim 11, comprising one or more further electronic switches (1) according to any one of claims 1 to 10, which are connected in anti-series with the first number of electronic switches (1), wherein: The number of electronic switches (1) associated with a first current direction is equal to the number of electronic switches (1) associated with another current direction.

13. A ship's electrical network comprising one or more electronic switches (1) according to any one of claims 1 to 10 and / or one or more switch devices according to claim 11 or 12.

14. A high voltage direct current transmission network, comprising at least one switch device according to claim 11 or 12.

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