A display device

Abstract

The application discloses a display device, comprising a display panel and a backlight module; the backlight module comprises a back plate, a circuit board and a light emitting device; the light emitting device comprises a substrate, a die-bonding electrode, a patch electrode and a micro light emitting diode chip; the patch electrode and the die-bonding electrode are respectively arranged on the surfaces of the two sides of the substrate, the patch electrode is electrically connected with the die-bonding electrode at the corresponding position through the conductive material in the through hole of the substrate, and the size of the patch electrode is larger than that of the die-bonding electrode; the micro light emitting diode chip can be die-bonded to the substrate by using a high-precision die bonder; since the size of the patch electrode in the light emitting device is larger than that of the die-bonding electrode, the light emitting device can still be pasted to the circuit board by using the existing patcher, and the currently used die-bonding equipment and patching equipment do not need to be improved, thereby avoiding the problem of low production yield caused by the mismatching of patching precision.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display device. BACKGROUND

[0002] Mini Light Emitting Diode (Mini LED) chip as a light source is applied in the display device, and has become a current hotspot. The application of a large number of Mini LED chips to the display device can realize more fine dynamic control and improve the dynamic contrast of liquid crystal display.

[0003] However, when the Mini LED chip is pasted on the circuit board, the production yield is low because the pasting precision is much larger than the die bonding size of the Mini LED chip. SUMMARY

[0004] In some embodiments of the present application, the display device comprises a display panel and a backlight module; the backlight module comprises a back plate, a circuit board and a light emitting device; the light emitting device comprises a substrate, a die bonding electrode, a pasting electrode and a Mini LED chip; the substrate comprises a through hole, and a conductive material is arranged in the through hole; the die bonding electrode is arranged on the surface of the substrate away from the circuit board; the pasting electrode is arranged on the surface of the substrate facing the circuit board; the pasting electrode is electrically connected to the die bonding electrode at the corresponding position through the conductive material in the through hole, and the size of the pasting electrode is larger than that of the die bonding electrode; the Mini LED chip can still be die bonded to the substrate by using a high-precision die bonder; the size of the pasting electrode in the light emitting device is larger than that of the die bonding electrode, so that the light emitting device can still be pasted on the circuit board by using the existing pasting machine, and the currently used die bonding equipment and pasting equipment do not need to be improved, thereby avoiding the problem of low production yield caused by the mismatch of pasting precision.

[0005] In some embodiments of the present application, the Mini LED chip is used in the light emitting device, which can realize the thinness of the display device and more fine dynamic control.

[0006] In some embodiments of the present application, the backlight module further comprises a driving device located on the side of the circuit board away from the light emitting device and electrically connected to the circuit board; the driving device provides driving signals for the light emitting device on the circuit board, so that the light emitting device can be driven to emit light by controlling the driving signals of the driving device; the light emitting device, the circuit board and the driving device form a lamp driving integrated lamp plate.

[0007] In some embodiments of the present application, the light-emitting device comprises two patch electrodes, two die-bonding electrodes and one micro LED chip, the positive electrode of the micro LED chip is connected to one die-bonding electrode, and the negative electrode of the micro LED chip is connected to the other die-bonding electrode; the light-emitting device comprises only one micro LED chip, the manufacturing process is simple, and the single chip can be independently controlled.

[0008] In some embodiments of the present application, the light-emitting device further comprises two patch electrodes, two die-bonding electrodes and a plurality of micro LED chips, and the light-emitting device further comprises a connecting electrode for connecting the plurality of micro LED chips in series. The arrangement of at least two micro LED chips in each light-emitting device can improve the patch efficiency of the light-emitting device and improve the luminous brightness of the single light-emitting device.

[0009] In some embodiments of the present application, the light-emitting device comprises two micro LED chips, namely a first micro LED chip and a second micro LED chip, the positive electrode of the first micro LED chip is connected to one die-bonding electrode, and the negative electrode of the first micro LED chip is connected to a connecting electrode; the positive electrode of the second micro LED chip is connected to the connecting electrode, and the negative electrode of the second micro LED chip is connected to the other die-bonding electrode, so as to realize the series connection of the first micro LED chip and the second micro LED chip. The arrangement of two micro LED chips in the light-emitting device can improve the luminous brightness.

[0010] In some embodiments of the present application, the light-emitting device comprises three micro LED chips, namely a first micro LED chip, a second micro LED chip and a third micro LED chip; two connecting electrodes, namely a first connecting electrode and a second connecting electrode; the positive electrode of the first micro LED chip is connected to one die-bonding electrode, and the negative electrode of the first micro LED chip is connected to the first connecting electrode; the positive electrode of the second micro LED chip is connected to the first connecting electrode, and the negative electrode of the second micro LED chip is connected to the second connecting electrode; the positive electrode of the third micro LED chip is connected to the second connecting electrode, and the negative electrode of the third micro LED chip is connected to the other die-bonding electrode, so as to realize the series connection of the first micro LED chip, the second micro LED chip and the third micro LED chip.

[0011] In some embodiments of the present application, the light-emitting device further comprises a packaging layer, which is a protective glue covering the surface of the micro LED chip. The packaging layer is used for packaging and protecting the micro LED chip and preventing foreign matters from entering the interior of the micro LED chip; the packaging layer can be made of transparent glue materials, such as silicone, modified silicone or epoxy resin with good permeability.

[0012] In some embodiments of the present application, the driving voltage of the light emitting device is greater than or equal to 6V, the voltage of a single light emitting device is increased, the display device can reduce the use of current under the condition of a certain number of partitions and light emitting devices, the metal wire loss is reduced, and the loss is reduced.

[0013] In some embodiments of the present application, the manufacturing method of the driving lamp plate comprises the following steps: providing a double-sided substrate circuit board, using surface mount technology to mount the light emitting device on the pads on one side of the double-sided substrate circuit board, and mounting the driving device on the terminals on the other side of the double-sided substrate circuit board, so as to realize the circuit connection of the light emitting device and the driving device, and control the light emitting device to emit light by controlling the driving signal of the driving device. In the light emitting device, a micro light emitting diode chip and a double-sided substrate are used, a fixed crystal electrode is arranged on one side of the double-sided substrate, and a patch electrode is arranged on the other side. The micro light emitting diode chip is fixedly connected to one side of the fixed crystal electrode; the size of the patch electrode in the light emitting device is greater than that of the fixed crystal electrode, and when the light emitting device is mounted on the circuit board, the existing SMT equipment can still be used to mount the light emitting device on the circuit board, and the currently used fixed crystal equipment and SMT equipment do not need to be improved, thereby avoiding the problem of low production yield caused by the mismatch of patching precision.

[0014] In some embodiments of the present application, the manufacturing method of the light emitting device comprises the following steps: providing a substrate, forming a plurality of through holes on the substrate, and arranging conductive materials in the through holes; forming a plurality of patch electrodes on the surface of one side of the substrate, and the patch electrodes are respectively located at the corresponding positions of the through holes and are electrically connected with the conductive materials arranged in the through holes; forming a plurality of fixed crystal electrodes on the surface of the side of the substrate away from the patch electrodes, and the fixed crystal electrodes are respectively located at the corresponding positions of the through holes and are electrically connected with the conductive materials arranged in the through holes, so that the patch electrodes and the fixed crystal electrodes at the corresponding positions are electrically connected through the conductive materials in the through holes, wherein the size of the patch electrode is greater than that of the fixed crystal electrode; forming a packaging layer on the surface of the micro light emitting diode chip; cutting the packaged micro light emitting diode chip, cutting off the non-electrode area, and finally forming a plurality of light emitting devices; the use of the micro light emitting diode chip can realize the thinning of the display device and the more precise dynamic control; the micro light emitting diode chip is arranged in the light emitting device, the micro light emitting diode chip can still be fixedly connected to the fixed crystal electrode by using the high-precision fixed crystal machine, the size of the patch electrode is greater than that of the fixed crystal electrode, the light emitting device can still be mounted on the circuit board by using the existing patch machine, the currently used fixed crystal equipment and patch equipment do not need to be improved, and the problem of low production yield caused by the mismatch of patching precision is avoided. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced as follows. Obviously, the drawings introduced below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0016] Figure 1 The cross-sectional structure schematic diagram of the display device provided by the embodiments of the present application is shown in the figure.

[0017] Figure 2 The cross-sectional structure schematic diagram of the backlight module provided by the embodiments of the present application is shown in the figure.

[0018] Figure 3 The cross-sectional structure schematic diagram of the light-emitting device provided by the embodiments of the present application is shown in the figure.

[0019] Figure 4 The cross-sectional structure schematic diagram of the light-emitting device provided by the embodiments of the present application is shown in the figure.

[0020] Figure 5 The cross-sectional structure schematic diagram of the light-emitting device provided by the embodiments of the present application is shown in the figure.

[0021] Figure 6 The flowchart of the manufacturing method of the driving lamp plate provided by the embodiments of the present application is shown in the figure.

[0022] Figure 7 The flowchart of the manufacturing method of the light-emitting device provided by the embodiments of the present application is shown in the figure.

[0023] Figures 8a to 8f The cross-sectional structure schematic diagram corresponding to each step of the manufacturing method of the light-emitting device provided by the embodiments of the present application is shown in the figure.

[0024] Figure 9 The cross-sectional structure schematic diagram corresponding to the die-bonded micro light-emitting diode chip provided by the embodiments of the present application is shown in the figure.

[0025] Figure 10 The cross-sectional structure schematic diagram corresponding to the die-bonded micro light-emitting diode chip provided by the embodiments of the present application is shown in the figure.

[0026] Wherein, 100-backlight module, 200-display panel, 11-back plate, 12-circuit board, 13-light emitting device, 14-driving device, 15-reflective sheet, 16-diffusion plate, 17-optical film, 18-diffusion plate support, 131-substrate, 132-die-bonding electrode, 133-surface mount electrode, 134-micro light emitting diode chip, 135-encapsulation layer, 136-connection electrode, 1310-conductive material, 1341-positive electrode, 1342-negative electrode, 134-1-first micro light emitting diode chip, 134-2-second micro light emitting diode chip, 136-1-first connection electrode, 136-2-second connection electrode, F-non-electrode area. DETAILED DESCRIPTION

[0027] In order to make the above objectives, characteristics and advantages of the present application more apparent, comprehensible and easier to understand, the present application will be further described below with reference to the accompanying drawings and examples. However, the example embodiments can be implemented in various forms, and should not be understood as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided so that the present application is more comprehensive and complete, and the concept of the example embodiments is fully conveyed to those skilled in the art. The same reference numerals in the drawings represent the same or similar structures, and thus repeated descriptions thereof will be omitted. The expressions of position and direction described in the present application are described with reference to the drawings, but can be changed as needed, and the changes made are included in the scope of protection of the present application. The drawings of the present application are only used to illustrate the relative positional relationship and do not represent the true proportions.

[0028] The liquid crystal display is mainly composed of a backlight module and a liquid crystal display panel. The liquid crystal display panel itself does not emit light and needs to rely on the light source provided by the backlight module to realize brightness display.

[0029] The imaging principle of the liquid crystal display is to place the liquid crystal between two conductive glasses, rely on the driving of the electric field between the two electrodes to cause the electric field effect of the liquid crystal molecules to be twisted, control the backlight transmission or shielding function, and thus display the image. If a color filter is added, a color image can be displayed.

[0030] Figure 1 The cross-sectional structure schematic diagram of the display device provided by the embodiment of the present application is shown.

[0031] Reference Figure 1 The display device includes a backlight module 100 and a display panel 200.

[0032] The display panel 200 is located at the light emitting side of the backlight module 100, and the shape and size of the display panel are generally matched with the backlight module. In general, the display panel 200 can be set as a rectangle, including a top side, a bottom side, a left side and a right side, wherein the top side and the bottom side are opposite, the left side and the right side are opposite, the top side is connected with one end of the left side and one side of the right side respectively, and the bottom side is connected with the other end of the left side and the other end of the right side respectively.

[0033] The display panel 200 is a transmissive display panel, which can modulate the transmittance of light but does not emit light itself. The display panel 200 has a plurality of pixel units arranged in an array, and the transmittance and color of light incident on each pixel unit from the backlight module 100 can be independently controlled, so that the light transmitted by all the pixel units constitutes a displayed image.

[0034] The backlight module 100 is generally located at the bottom of the display device, and the shape and size thereof are adapted to the shape and size of the display device. When applied in the field of television or mobile terminal, the backlight module generally adopts a rectangular shape.

[0035] The backlight module in the embodiment of the present application adopts a direct type backlight module, which is used to uniformly emit light on the entire light emitting surface, so as to provide the display panel with light having sufficient brightness and uniform distribution, so that the display panel can normally display images.

[0036] Figure 2 The backlight module provided in the embodiment of the present application is shown in a cross-sectional structure diagram.

[0037] Referring to Figure 2 , the backlight module comprises a back plate 11, a circuit board 12, a light emitting device 13, a driving device 14, a reflecting sheet 15, a diffusion plate 16, an optical film 17 and a diffusion plate support 18.

[0038] The back plate 11 is located at the bottom of the backlight module and has a supporting and bearing effect. In general, the back plate 11 is a rectangular structure, and when applied in a special-shaped display device, the shape thereof is adapted to the shape of the display device. The back plate 11 includes a top side, a bottom side, a left side and a right side, wherein the top side and the bottom side are opposite, the left side and the right side are opposite, the top side is connected with one end of the left side and one side of the right side respectively, and the bottom side is connected with the other end of the left side and the other end of the right side respectively.

[0039] The material of the back plate 11 is aluminum, iron, aluminum alloy or iron alloy, etc. The back plate 11 is used to fix the circuit board 12 and support and fix the edge positions of the diffusion plate 14 and the optical film 15, etc. The back plate 11 also plays a role of heat dissipation for the circuit board 12.

[0040] The circuit board 12 is located on the back plate 11, and the shape of the circuit board 12 can be plate-shaped or strip-shaped. When the circuit board 12 is plate-shaped, the shape of the circuit board 12 can be the same as the shape of the back plate 11. In general, the circuit board 12 is plate-shaped, and the overall shape is rectangular or square.

[0041] The circuit board 12 can be a printed circuit board (PCB), and the PCB includes a substrate, double-sided electronic circuits, and double-sided insulating layers.

[0042] The substrate can be made of FR4 or glass, or the like. Alternatively, the substrate can be made of a flexible material to form a flexible circuit board.

[0043] The electronic circuits are located on both sides of the substrate, and the material of the electronic circuits is generally copper. An etching process is used to form a pattern of the electronic circuits for receiving a driving signal on the surface close to the back plate 11, and to form a pad for connecting a driving device on the surface away from the back plate 11.

[0044] The insulating layers cover the double-sided electronic circuits on both sides, respectively, and have a protective effect on the electronic circuits. The insulating layers expose the pads for electrically connecting the light emitting devices 13 and the pads for electrically connecting the driving devices 14, and cover the remaining parts.

[0045] Alternatively, the circuit board 12 can be an array substrate formed by manufacturing a thin film transistor driving circuit on a substrate, and the surface of the array substrate has a connection electrode connected to the thin film transistor driving circuit for electrically connecting the light emitting devices 13.

[0046] The light emitting devices 13 are located on the circuit board 12, and serve as a light source of the display device to provide backlight for the display device. In the embodiment of the present application, the driving voltage of the light emitting devices 13 is greater than or equal to 6V. Increasing the voltage of a single light emitting device 13 can reduce the current used by the display device under the condition of a certain number of partitions and light emitting devices 13, thereby reducing the metal wire loss and achieving a reduction in loss.

[0047] The driving devices 14 are located on the side of the circuit board 12 away from the light emitting devices 13, and are electrically connected to the circuit board 12.

[0048] The driving devices 14 provide driving signals for the light emitting devices 13 on the circuit board 12, so that the light emitting devices 13 can be driven to emit light by controlling the driving signals of the driving devices 14. The light emitting devices 13, the circuit board 14, and the driving devices 14 form a lamp-integrated lamp plate.

[0049] The reflective sheet 15 is located on the side of the circuit board 12 close to the light emitting device 13, and is usually rectangular or square. The reflective sheet 15 provided by the embodiment of the present application comprises a substrate and a reflective layer, the substrate is made of PET, and the reflective layer is formed by spraying a mixture with high reflectivity on the substrate.

[0050] The reflective sheet 15 comprises a plurality of openings for the light emitting device 13. The reflective sheet 15 is arranged on the circuit board 12, so that each light emitting device 13 is exposed, and the light emitting device 13 can smoothly emit light. The reflective sheet 15 has the property of reflecting light, so that the light emitted by the light emitting device 13 to the side of the backboard 11, or the light reflected by the elements in the backlight module back to the side of the backboard 11, can be reflected by the reflective sheet 15 to the light emitting side, thereby improving the utilization efficiency of the light source.

[0051] The diffusion plate 16 is located on the light emitting side of the light emitting device 13, and is a certain distance away from the reflective sheet 15. The shape of the diffusion plate 16 is the same as the overall shape of the circuit board 12. Usually, the diffusion plate 16 can be rectangular or square.

[0052] The diffusion plate 16 scatters the incident light, so that the light passing through the diffusion plate 16 is more uniform. The diffusion plate 16 is provided with scattering particle materials. When light enters the scattering particle materials, it will continuously refract and reflect, thereby achieving the effect of dispersing light and realizing the function of uniform light.

[0053] The diffusion plate 16 has high haze and more uniform effect, and can usually be processed by extrusion process. The material of the diffusion plate 16 is usually at least one of polymethyl methacrylate PMMA, polycarbonate PC, polystyrene material PS, and polypropylene PP.

[0054] The diffusion plate 16 can also be provided with quantum dot materials to form a quantum dot diffusion plate. The quantum dot materials include red quantum dot materials and green quantum dot materials. The red quantum dot materials emit red light under the excitation of blue light, the green quantum dot materials emit green light under the excitation of blue light, and the excited red light, green light and transmitted blue light are mixed into white light.

[0055] The quantum dot diffusion plate does not need to be provided with a quantum dot film in the subsequent process of manufacturing the backlight module, which not only reduces the cost, but also makes the display device thinner and lighter.

[0056] The optical film 17 is located on the side of the diffusion plate 16 away from the reflective sheet 15. The optical film 17 is arranged in an entire layer, and the shape of the optical film 17 is the same as the overall shape of the circuit board 12. Usually, the optical film 17 can be rectangular or square.

[0057] The arrangement of the optical film 17 can make the backlight module adapt to various actual applications.

[0058] In the embodiment of the present application, the light emitting device 13 can adopt a blue light device, and the optical film 17 comprises a quantum dot layer or a fluorescent layer.

[0059] The quantum dot layer comprises red quantum dot material and green quantum dot material, the red quantum dot material emits red light under excitation of blue light, the green quantum dot material emits green light under excitation of blue light, and the excited red light, green light and transmitted blue light are mixed to emit white light.

[0060] The fluorescent layer comprises fluorescent material excited to emit red light and green light, and the excited red light, green light and transmitted blue light are mixed to emit white light.

[0061] In addition, the optical film 17 can further comprise a prism sheet, which can change the emission angle of light, thereby changing the viewable angle of the display device.

[0062] The optical film 17 can further comprise a reflective polarizing sheet, which can improve the brightness of the backlight module and the utilization efficiency of light as a kind of brightness enhancement film, and the emitted light has the property of polarization, thereby omitting the use of the polarizing sheet below the liquid crystal display panel.

[0063] The diffusion plate 16 needs to cover the area where the circuit board 12 is located, and has a relatively large size, which is prone to collapse and warping deformation, thereby degrading the optical properties of the backlight module and even damaging the light emitting device 13. Therefore, a diffusion plate support 18 is usually arranged between the reflective sheet 15 and the diffusion plate 16 to support the diffusion plate 16.

[0064] The material of the diffusion plate support 18 is generally polycarbonate PC.

[0065] In specific implementation, the shape of the diffusion plate support 18 can be a simple triangular shape, a trapezoidal shape, a conical shape, etc., which is not limited herein.

[0066] The light emitting device 13 in the currently used lamp panel generally adopts a light emitting diode, and the light emitting diode chip is attached to the lamp panel with high productivity. With the development of technology, in the ultra-thin and ultra-multiple partition display device, in order to realize thinness, realize more fine dynamic control, and improve the dynamic contrast of liquid crystal display, a large number of light emitting diode lamps are often required. If the traditional light emitting diode chip is used, the area of a single light emitting diode chip is large, and the total area is too large, which forms redundancy and causes cost waste. Therefore, a chip with a small area, i.e. a micro light emitting diode chip, needs to be introduced. However, the precision of the current device for attaching the micro light emitting diode chip to the circuit board is much larger than the die bonding size of the micro light emitting diode chip. Therefore, the production yield is low when the micro light emitting diode chip is attached to the circuit board.

[0067] In addition, when manufacturing the lamp panel integrated with the lamp driver, if the patch driving device is first attached on the circuit board and then the Mini LED chip is die-bonded, the surface of the Mini LED chip needs to be coated with encapsulation glue, and the encapsulation glue generally needs to be baked at 150 DEG C for about 3 hours. Long time heating may cause the driving device to be defective, resulting in damage to the driving device. If the Mini LED chip is die-bonded on the circuit board first and then the driving device is attached, the Mini LED chip cannot be tested and selected before the surface of the Mini LED chip is coated with encapsulation glue because the driving device has not been attached. Once the Mini LED is encapsulated, it is difficult to repair after the driving device is attached.

[0068] Therefore, in the embodiment of the present application, the light emitting device is set as follows, which not only realizes thinning and more precise dynamic control by using micro light emitting diode chips in the display device, but also improves the production yield when the micro light emitting diode chip is attached on the circuit board.

[0069] Figure 3 The cross-sectional structure of the light emitting device provided in the embodiment of the present application is shown in FIG. 1.

[0070] In the embodiment of the present application, the die-bonding electrode and the patch electrode are respectively arranged on both sides of the substrate of the light emitting device, and a through hole is arranged on the substrate, and a conductive material is arranged in the through hole to electrically connect the corresponding die-bonding electrode and patch electrode.

[0071] In the embodiment of the present application, the size of the patch electrode is larger than the size of the die-bonding electrode; the micro light emitting diode chip can still be die-bonded to the substrate by using a high-precision die-bonding machine; the size of the patch electrode in the light emitting device is larger than the size of the die-bonding electrode, so that the light emitting device can still be attached to the circuit board by using the existing patch machine, and the currently used die-bonding equipment and patch equipment do not need to be improved, thereby avoiding the problem of low production yield caused by the mismatch of patching precision.

[0072] Specifically, referring to Figure 3 , the light emitting device 13 includes a substrate 131, two die-bonding electrodes 132, two patch electrodes 133, a micro light emitting diode chip 134 and an encapsulation layer 135.

[0073] The substrate 131 is located on one side of the circuit board 12, and the substrate 131 can be made of ceramic, FR4 or aluminum base, etc. In general, the substrate 131 is rectangular or square.

[0074] In the embodiment of the present application, the substrate 131 comprises two through holes, and conductive material 1310 is arranged in the through holes, and the conductive material 1310 can be copper.

[0075] Two die bonding electrodes 132 are arranged on the surface of the substrate 131 away from the circuit board 12, and the two die bonding electrodes 132 are respectively arranged at the corresponding positions of the two through holes and are connected with the conductive material 1310, and the material of the die bonding electrode 132 can be copper.

[0076] Two patch electrodes 133 are arranged on the surface of the substrate 131 facing the circuit board 12, and the two patch electrodes 133 are respectively arranged at the corresponding positions of the two through holes and are connected with the conductive material 1310, and the patch electrode 133 is electrically connected with the die bonding electrode 132 at the corresponding position through the conductive material 1310 in the through hole, and the material of the patch electrode 133 can be copper.

[0077] In the embodiment of the present application, the size of the patch electrode 133 is greater than the size of the die bonding electrode 132.

[0078] The micro light emitting diode chip 134 is die bonded to the die bonding electrode 132 by a die bonder and is electrically connected with the die bonding electrode 132.

[0079] The micro light emitting diode chip 134 provided by the embodiment of the present application is a flip micro light emitting diode chip, that is, the positive electrode and the negative electrode of the micro light emitting diode chip 134 are arranged on the bottom surface of the micro light emitting diode chip 134, which avoids the problem that the positive electrode and the negative electrode of the micro light emitting diode chip 134 are arranged on the upper surface of the micro light emitting diode chip 134 and need to be welded with metal wires, thereby causing the metal wires to block the light of the micro light emitting diode chip 134.

[0080] The packaging layer 135 is a protective glue covering the surface of the micro light emitting diode chip 134. The packaging layer 135 is used for packaging and protecting the micro light emitting diode chip 134 and preventing foreign matters from entering the inside of the micro light emitting diode chip 134. In the embodiment of the present application, the packaging layer 135 can be transparent glue material, such as silica gel, modified silica gel or epoxy resin with better permeability.

[0081] The micro light emitting diode chip 134 is arranged in the light emitting device 13, and the micro light emitting diode chip 134 can still be fixed to the substrate 131 by using a high-precision die bonder; the size of the patch electrode 133 in the light emitting device 13 is greater than the size of the die bonding electrode 132, when the light emitting device 13 is patched to the circuit board 12, the existing patching (Surface Mounted Technology, SMT for short) machine can still be used to patch the light emitting device 13 to the circuit board 12, and the currently used die bonding equipment and SMT equipment do not need to be improved, thereby avoiding the problem of low production yield caused by the mismatching of patching precision.

[0082] In the embodiment of the application, as shown in Figure 3 The light emitting device 13 can include two patch electrodes, two die bonding electrodes and one micro light emitting diode chip 134, the anode 1341 of the micro light emitting diode chip 134 is connected to one die bonding electrode 132, and the cathode 1342 of the micro light emitting diode chip 134 is connected to the other die bonding electrode 132.

[0083] The light emitting device 13 only includes one micro light emitting diode chip 134, the manufacturing process is simple, and the single chip can be independently controlled.

[0084] The light emitting device 13 can also include a plurality of micro light emitting diode chips 134, and at this time, the light emitting device also includes a connecting electrode for connecting the plurality of micro light emitting diode chips 134 together. Arranging at least two micro light emitting diode chips in each light emitting device 13 can improve the patching efficiency of the light emitting device 13 and improve the luminous brightness of the single light emitting device 13.

[0085] Figure 4 The cross-sectional structure diagram of the light emitting device provided by the embodiment of the application is shown in Figure 2.

[0086] Referring to Figure 4 When the light emitting device 13 includes two patch electrodes, two die bonding electrodes and at least two micro light emitting diode chips 134, the light emitting device 13 further includes a connecting electrode 136.

[0087] The connecting electrode 136 is located on the surface of the substrate 131 away from the patch electrode 133, and the connecting electrode 136 is located between the two die bonding electrodes 132; at least one electrode of the micro light emitting diode chip 134 in the light emitting device 13 is electrically connected to the connecting electrode 136.

[0088] Specifically, as shown in Figure 4As shown, the light emitting device 13 provided by the embodiment of the present application comprises two micro light emitting diode chips 134 (a first micro light emitting diode chip 134-1 and a second micro light emitting diode chip 134-2), the anode 1341 of the first micro light emitting diode chip 134-1 is connected to one die bonding electrode 132, and the cathode 1342 of the first micro light emitting diode chip 134-1 is connected to a connecting electrode 136; the anode 1341 of the second micro light emitting diode chip 134-2 is connected to the connecting electrode 136, and the cathode 1342 of the second micro light emitting diode chip 134-2 is connected to another die bonding electrode 132, so as to realize the series connection of the first micro light emitting diode chip 134-1 and the second micro light emitting diode chip 134-2. The arrangement of the two micro light emitting diode chips 134 in the light emitting device can improve the light emitting brightness.

[0089] Figure 5 FIG. 3 is a cross-sectional structure schematic diagram of the light emitting device provided by the embodiment of the present application.

[0090] Referring to Figure 5 , the light emitting device 13 comprises three micro light emitting diode chips 134 (a first micro light emitting diode chip 134-1, a second micro light emitting diode chip 134-2 and a third micro light emitting diode chip 134-3) and two connecting electrodes 136 (a first connecting electrode 136-1 and a second connecting electrode 136-2).

[0091] The anode 1341 of the first micro light emitting diode chip 134-1 is connected to one die bonding electrode 132, and the cathode 1342 of the first micro light emitting diode chip 134-1 is connected to the first connecting electrode 136-1; the anode 1341 of the second micro light emitting diode chip 134-2 is connected to the first connecting electrode 136-1, and the cathode 1342 of the second micro light emitting diode chip 134-2 is connected to the second connecting electrode 136-2; the anode 1341 of the third micro light emitting diode chip 134-3 is connected to the second connecting electrode 136-2, and the cathode 1342 of the third micro light emitting diode chip 134-3 is connected to another die bonding electrode 132, so as to realize the series connection of the first micro light emitting diode chip 134-1, the second micro light emitting diode chip 134-2 and the third micro light emitting diode chip 134-3.

[0092] In actual application, each light emitting device 13 can comprise one micro light emitting diode chip 134 or multiple micro light emitting diode chips 134. The number of the micro light emitting diode chips 134 contained in each light emitting device 13 can be set according to different requirements of the display device, and the specific number is not limited herein.

[0093] In another aspect of the embodiment of the present application, a manufacturing method of a light panel is provided. Figure 6A flowchart of a manufacturing method of the driving lamp plate provided by the embodiment of the present application is shown.

[0094] Referring to Figure 6 The manufacturing method of the driving lamp plate provided by the embodiment of the present application comprises:

[0095] S10, providing a double-sided substrate circuit board;

[0096] S20, patching a light-emitting device on one side of the double-sided substrate circuit board;

[0097] S30, patching a driving device on the other side of the double-sided substrate circuit board.

[0098] Specifically, a double-sided substrate circuit board is provided, a light-emitting device is patched on the pads on one side of the double-sided substrate circuit board by using a surface mount technology (SMT), that is, the light-emitting device is welded on the pads on one side of the double-sided substrate circuit board by a reflow soldering or a dip soldering method; and a driving device is patched and welded on the terminals on the other side of the double-sided substrate circuit board, so as to realize the electrical connection between the light-emitting device and the driving device, and control the light-emitting device to emit light by controlling the driving signal of the driving device.

[0099] The micro light-emitting diode chip is adopted in the light-emitting device provided by the embodiment of the present application, the double-sided substrate is adopted, the fixed crystal electrode is arranged on one side, and the patch electrode is arranged on the other side. The micro light-emitting diode chip is fixedly crimped to one side of the fixed crystal electrode; the size of the patch electrode in the light-emitting device is greater than the size of the fixed crystal electrode, and when the light-emitting device is patched to the circuit board, the light-emitting device can still be patched to the circuit board by using the existing SMT equipment, and the currently used fixed crystal equipment and SMT equipment do not need to be improved, thereby avoiding the problem of low production yield caused by the mismatch of patching precision.

[0100] Figure 7 A flowchart of a manufacturing method of the light-emitting device provided by the embodiment of the present application is shown.

[0101] Referring to Figure 7 The manufacturing method of the light-emitting device provided by the embodiment of the present application comprises:

[0102] S10, providing a substrate, forming a plurality of through holes on the substrate, and arranging conductive materials in the through holes;

[0103] S20, forming a plurality of patch electrodes on the surface of one side of the substrate;

[0104] S30, forming a plurality of fixed crystal electrodes on the surface of the side of the substrate away from the patch electrodes;

[0105] S40, fixedly crimping a micro light-emitting diode chip to the fixed crystal electrodes;

[0106] S50, forming a packaging layer on the surface of the micro light emitting diode chip;

[0107] S60, cutting the packaged micro light emitting diode chip to form a plurality of light emitting devices.

[0108] Figures 8a to 8f The cross-sectional structure diagram corresponding to each step of the manufacturing method of the light emitting device provided by the embodiment of the present application.

[0109] Specifically, referring to Figure 8a The manufacturing method of the light emitting device provided by the embodiment of the present application first provides a substrate 131, forms a plurality of through holes on the substrate 131, and sets a conductive material 1310 in the through holes.

[0110] Referring to Figure 8b A plurality of patch electrodes 133 are formed on the surface of one side of the substrate 131, and the patch electrodes 133 are respectively located at the corresponding positions of the through holes and are electrically connected with the conductive material 1310 set in the through holes.

[0111] Referring to Figure 8c A plurality of die bonding electrodes 132 are formed on the surface of the side of the substrate away from the patch electrodes 133, and the die bonding electrodes 132 are respectively located at the corresponding positions of the through holes and are electrically connected with the conductive material 1310 set in the through holes, so that the patch electrodes 133 and the die bonding electrodes 132 at the corresponding positions are electrically connected through the conductive material 1310 in the through holes, wherein the size of the patch electrode 133 is greater than the size of the die bonding electrode 132.

[0112] Referring to Figure 8d The micro light emitting diode chip 134 is die bonded to the die bonding electrode 132. Specifically, when the light emitting device provided by the embodiment of the present application includes one micro light emitting diode chip 134, the anode 1341 of the micro light emitting diode chip 134 is die bonded to one die bonding electrode 132, and the cathode 1342 of the micro light emitting diode chip 134 is die bonded to another die bonding electrode 132. The material used for die bonding of the micro light emitting diode chip 134 can be tin paste, white glue or silicone.

[0113] Specifically, the micro light emitting diode chip 134 can realize thinning of the display device and more precise dynamic control. By setting the micro light emitting diode chip 134 in the light emitting device, the micro light emitting diode chip 134 can still be die bonded to the die bonding electrode 132 by using a high-precision die bonder.

[0114] Referring to Figure 8e A packaging layer 135 is formed on the surface of the micro light emitting diode chip 134. In the embodiment provided by the present application, the packaging layer 135 can be made by using an integral layer coating method, wherein the packaging layer 135 is made by using an integral layer coating method, and the manufacturing process is simple.

[0115] Referring to Figure 8f The encapsulated micro light emitting diode chips 134 are cut to remove the non-electrode area F, and a plurality of light emitting devices 13 are finally formed.

[0116] In another embodiment provided by the present application, the light emitting device can also include at least two micro light emitting diode chips 134, and in the above S30, the connecting electrodes 136 are formed on the substrate 131 between the two die-bonding electrodes 132 at the same time when the plurality of die-bonding electrodes 132 are formed on the surface of the substrate 131 away from the patch electrode.

[0117] Specifically, referring to Figure 9 When the light emitting device includes two micro light emitting diode chips 134 (a first micro light emitting diode chip 134-1 and a second micro light emitting diode chip 134-2), the above S40 "die-bonding the micro light emitting diode chip to the die-bonding electrode" includes die-bonding the anode 1341 of the first micro light emitting diode chip 134-1 to one die-bonding electrode 132, and die-bonding the cathode 1342 of the first micro light emitting diode chip 134-1 to the connecting electrode 136; die-bonding the anode 134-1 of the second micro light emitting diode chip 134-2 to the connecting electrode 136, and die-bonding the cathode 1342 of the second micro light emitting diode chip 134-2 to the other die-bonding electrode 132, so as to realize the series connection of the first micro light emitting diode chip 134-1 and the second micro light emitting diode chip 134-2.

[0118] The remaining steps are not repeated here.

[0119] In another embodiment provided by the present application, the light emitting device includes three micro light emitting diode chips 134 (a first micro light emitting diode chip 134-1, a second micro light emitting diode chip 134-2, and a third micro light emitting diode chip 134-3) and two connecting electrodes 136 (a first connecting electrode 136-1 and a second connecting electrode 136-2). Referring to Figure 10At this time, the step of "mounting the micro light emitting diode chip on the die-bonding electrode" in the above S40 includes: mounting the anode 1341 of the first micro light emitting diode chip 134-1 on one die-bonding electrode 132, and mounting the cathode 1342 of the first micro light emitting diode chip 134-1 on the first connecting electrode 136-1; mounting the anode 1341 of the second micro light emitting diode chip 134-2 on the first connecting electrode 136-1, and mounting the cathode 1342 of the second micro light emitting diode chip 134-2 on the second connecting electrode 136-2; mounting the anode 1341 of the third micro light emitting diode chip 134-3 on the second connecting electrode 136-2, and finally mounting the cathode 1342 of the third micro light emitting diode chip 134-3 on another die-bonding electrode 132, so as to realize the series connection of the first micro light emitting diode chip 134-1, the second micro light emitting diode chip 134-2 and the third micro light emitting diode chip 134-3.

[0120] The remaining steps are not repeated here.

[0121] According to the first inventive concept, the light emitting device comprises: a substrate, a die-bonding electrode, a patch electrode and a micro light emitting diode chip; the substrate comprises a through hole, the through hole is provided with a conductive material, the die-bonding electrode is arranged on the surface of the substrate away from the circuit board, the patch electrode is arranged on the surface of the substrate facing the circuit board, the patch electrode is electrically connected to the die-bonding electrode at the corresponding position through the conductive material in the through hole, and the size of the patch electrode is larger than the size of the die-bonding electrode; the micro light emitting diode chip is arranged in the light emitting device, and the micro light emitting diode chip can still be die-bonded to the substrate by using a high-precision die-bonding machine; the size of the patch electrode in the light emitting device is larger than the size of the die-bonding electrode, and when the light emitting device is patched to the circuit board, the existing patch SMT equipment can still be used to patch the light emitting device to the circuit board, without the need to improve the currently used die-bonding equipment and SMT equipment, thereby avoiding the problem of low production yield caused by the mismatch of patching precision.

[0122] According to the second inventive concept, the micro light emitting diode chip is used in the light emitting device, which can realize the thinness of the display device and realize more precise dynamic control.

[0123] According to the third inventive concept, the micro light emitting diode chip is a flip-chip micro light emitting diode chip, that is, the anode and the cathode of the micro light emitting diode chip are located on the bottom surface of the micro light emitting diode chip, thereby avoiding the problem that the anode and the cathode of the micro light emitting diode chip are located on the upper surface of the micro light emitting diode chip and need to be welded with metal wires, which causes the metal wires to block the light of the micro light emitting diode chip.

[0124] According to the fourth inventive concept, the light emitting device can include two die-bonding electrodes, two patch electrodes, and one micro LED chip, a positive electrode of the micro LED chip is connected to one of the die-bonding electrodes, and a negative electrode of the micro LED chip is connected to the other die-bonding electrode. The light emitting device includes only one micro LED chip, and thus the manufacturing process is simple, and the single chip can be independently controlled.

[0125] According to the fifth inventive concept, the light emitting device can further include two die-bonding electrodes, two patch electrodes, and a plurality of micro LED chips, and the light emitting device can further include a connection electrode for connecting the plurality of micro LED chips in series. The provision of at least two micro LED chips in each light emitting device can improve the patch efficiency of the light emitting device and improve the light emitting brightness of the single light emitting device.

[0126] According to the sixth inventive concept, the light emitting device includes two micro LED chips (a first micro LED chip and a second micro LED chip), a positive electrode of the first micro LED chip is connected to one of the die-bonding electrodes, and a negative electrode of the first micro LED chip is connected to the connection electrode; a positive electrode of the second micro LED chip is connected to the connection electrode, and a negative electrode of the second micro LED chip is connected to the other die-bonding electrode, thereby realizing the series connection of the first micro LED chip and the second micro LED chip. The provision of two micro LED chips in the light emitting device can improve the light emitting brightness.

[0127] According to the seventh inventive concept, the light emitting device includes three micro LED chips (a first micro LED chip, a second micro LED chip, and a third micro LED chip) and two connection electrodes (a first connection electrode and a second connection electrode); a positive electrode of the first micro LED chip is connected to one of the die-bonding electrodes, and a negative electrode of the first micro LED chip is connected to the first connection electrode; a positive electrode of the second micro LED chip is connected to the first connection electrode, and a negative electrode of the second micro LED chip is connected to the second connection electrode; a positive electrode of the third micro LED chip is connected to the second connection electrode, and a negative electrode of the third micro LED chip is connected to the other die-bonding electrode, thereby realizing the series connection of the first micro LED chip, the second micro LED chip, and the third micro LED chip.

[0128] According to the eighth inventive concept, a manufacturing method of a driving lamp plate comprises: providing a double-sided substrate circuit board; using a surface mount technology to mount a light emitting device on a pad on one side of the double-sided substrate circuit board, i.e. welding the light emitting device on the pad on one side of the double-sided substrate circuit board by reflow soldering or dip soldering; and mounting a driving device on a terminal on the other side of the double-sided substrate circuit board, so as to realize electrical connection between the light emitting device and the driving device, control the light emitting device to emit light by controlling a driving signal of the driving device, and use a micro light emitting diode chip in the light emitting device, use a double-sided substrate, provide a fixed crystal electrode on one side of the double-sided substrate, and provide a mounting electrode on the other side of the double-sided substrate. The micro light emitting diode chip is fixed to the one side of the fixed crystal electrode; the size of the mounting electrode is greater than the size of the fixed crystal electrode, and when the light emitting device is mounted on the circuit board, the light emitting device can still be mounted on the circuit board by using the existing SMT equipment, the currently used fixed crystal equipment and SMT equipment do not need to be improved, and the problem of low production yield caused by mounting precision mismatch is avoided.

[0129] According to the ninth inventive concept, a manufacturing method of a light emitting device comprises: providing a substrate, forming a plurality of through holes on the substrate, and arranging conductive materials in the through holes; forming a plurality of mounting electrodes on a surface of one side of the substrate, and arranging the mounting electrodes at corresponding positions of the through holes to be electrically connected with the conductive materials arranged in the through holes; forming a plurality of fixed crystal electrodes on a surface of the other side of the substrate away from the mounting electrodes, and arranging the fixed crystal electrodes at corresponding positions of the through holes to be electrically connected with the conductive materials arranged in the through holes, so that the mounting electrodes and the fixed crystal electrodes at the corresponding positions are electrically connected through the conductive materials in the through holes, wherein the size of the mounting electrode is greater than the size of the fixed crystal electrode; forming an encapsulation layer on a surface of a micro light emitting diode chip, in the embodiments provided in the application, the encapsulation layer can be manufactured in an integral layer coating manner, wherein the encapsulation layer is manufactured in an integral layer coating manner, and the manufacturing process is simple; cutting the micro light emitting diode chip after encapsulation, and cutting off a non-electrode region, to finally form a plurality of light emitting devices; the micro light emitting diode chip can realize thin display devices and more precise dynamic control; the micro light emitting diode chip is arranged in the light emitting device, the micro light emitting diode chip can still be fixed to the fixed crystal electrode by using a high-precision fixed crystal machine, the size of the mounting electrode is greater than the size of the fixed crystal electrode, the light emitting device can still be mounted on a circuit board by using the existing mounting machine, the currently used fixed crystal equipment and mounting equipment do not need to be improved, and the problem of low production yield caused by mounting precision mismatch is avoided.

[0130] According to the tenth inventive concept, the driving voltage of the light emitting device is greater than or equal to 6V, the voltage of a single light emitting device is improved, the display device can reduce the use of current under the condition that the number of partitions and the light emitting device are certain, the metal wire loss is reduced, and the loss is reduced.

[0131] While the preferred embodiments of the application have been described, additional variations and modifications can be made to these embodiments by those skilled in the art once they have the benefit of the present disclosure without departing from the spirit and scope of the application. Accordingly, it is intended that the appended claims include all such modifications and variations as fall within the scope of the present application.

[0132] It is apparent that those skilled in the art can make various changes and modifications to the application without departing from the spirit and scope of the application. It is therefore intended that the present application cover all such changes and modifications that are within its scope.

Claims

1. A display device, characterized by comprising: The application relates to a display panel, a backlight module and a light-emitting device. The display panel is used for image display. The backlight module is located on the light-incident side of the display panel and is used for providing backlight. The backlight module comprises: a back plate having supporting and bearing functions; a double-sided substrate circuit board located on one side of the back plate and used for providing driving signals; a light-emitting device attached to one side of the double-sided substrate circuit board; and a driving device attached to the other side of the double-sided substrate circuit board. The light-emitting device comprises: a substrate located on one side of the double-sided substrate circuit board; the substrate comprises a through hole in which conductive material is arranged; a patch electrode located on the surface of the substrate facing one side of the double-sided substrate circuit board; the patch electrode is arranged at the corresponding position of the through hole; a die-bonding electrode located on the surface of the substrate away from one side of the double-sided substrate circuit board; the die-bonding electrode is arranged at the corresponding position of the through hole; the patch electrode and the die-bonding electrode at the corresponding position are electrically connected through the conductive material in the through hole; the size of the patch electrode is larger than that of the die-bonding electrode; and a micro light-emitting diode chip located on the surface of the substrate away from one side of the double-sided substrate circuit board; the micro light-emitting diode chip is die-bonded on the die-bonding electrode.

2. The display device of claim 1, wherein, The light-emitting device comprises two patch electrodes, two die-bonding electrodes and one micro light-emitting diode chip. The anode of the micro light-emitting diode chip is connected with one die-bonding electrode, and the cathode of the micro light-emitting diode chip is connected with the other die-bonding electrode.

3. The display device of claim 1, wherein The light-emitting device comprises two patch electrodes, two die-bonding electrodes and at least two micro light-emitting diode chips. The light-emitting device further comprises: a connecting electrode located on the surface of the substrate away from one side of the double-sided substrate circuit board; the connecting electrode is located between the two die-bonding electrodes; at least one electrode of the micro light-emitting diode chip in the light-emitting device is electrically connected with the connecting electrode.

4. The display device of claim 3, wherein, The light-emitting device comprises two micro light-emitting diode chips, namely a first micro light-emitting diode chip and a second micro light-emitting diode chip; the light-emitting device comprises one connecting electrode; the anode of the first micro light-emitting diode chip is connected with one die-bonding electrode, and the cathode of the first micro light-emitting diode chip is connected with the connecting electrode; the anode of the second micro light-emitting diode chip is connected with the connecting electrode, and the cathode of the second micro light-emitting diode chip is connected with the other die-bonding electrode.

5. The display device according to claim 3, wherein The light-emitting device comprises three micro light-emitting diode chips, namely a first micro light-emitting diode chip, a second micro light-emitting diode chip and a third micro light-emitting diode chip; the light-emitting device comprises two connecting electrodes, namely a first connecting electrode and a second connecting electrode. The anode of the first micro LED chip is connected with one of the die-bonding electrodes, and the cathode of the first micro LED chip is connected with the first connecting electrode; the anode of the second micro LED chip is connected with the first connecting electrode, and the cathode of the second micro LED chip is connected with the second connecting electrode; the anode of the third micro LED chip is connected with the second connecting electrode, and the cathode of the third micro LED chip is connected with another die-bonding electrode.

6. A display device as claimed in any one of claims 1 to 5, characterized in that The light emitting device further comprises an encapsulation layer on the surface of the micro LED chip for encapsulation and protection of the micro LED chip.

7. A display device as claimed in any one of claims 1-5, characterized in that The driving voltage of the light emitting device is greater than or equal to 6V.

8. A method of fabricating a light panel driver, the method comprising: Comprise: A double-sided substrate circuit board is provided; A light emitting device is attached to one side of the double-sided substrate circuit board; A driving device is attached to the other side of the double-sided substrate circuit board; The light emitting device comprises: A substrate on one side of the double-sided substrate circuit board; the substrate comprises through holes, and conductive materials are arranged in the through holes; Patch electrodes on the surface of the substrate facing one side of the double-sided substrate circuit board; the patch electrodes are arranged at corresponding positions of the through holes; Die-bonding electrodes on the surface of the substrate away from one side of the double-sided substrate circuit board; the die-bonding electrodes are arranged at corresponding positions of the through holes; the patch electrodes and the die-bonding electrodes at the corresponding positions are electrically connected through the conductive materials in the through holes; the size of the patch electrodes is greater than the size of the die-bonding electrodes; and Micro LED chips on the side of the substrate away from the double-sided substrate circuit board; the micro LED chips are die-bonded on the die-bonding electrodes.

9. The manufacturing method as described in claim 8, characterized in that, The light emitting device is manufactured in the following manner: A substrate is provided, and a plurality of through holes are formed on the substrate, and conductive materials are arranged in the through holes; A plurality of patch electrodes are formed on the surface of one side of the substrate; the patch electrodes are respectively arranged at corresponding positions of the through holes; A plurality of die-bonding electrodes are formed on the surface of the side of the substrate away from the patch electrodes; the die-bonding electrodes are respectively arranged at corresponding positions of the through holes; the patch electrodes and the die-bonding electrodes at the corresponding positions are electrically connected through the conductive materials in the through holes; the size of the patch electrodes is greater than the size of the die-bonding electrodes; Micro LED chips are die-bonded on the die-bonding electrodes; An encapsulation layer is formed on the surface of the micro LED chips; The encapsulated micro LED chips are cut to form a plurality of light emitting devices.

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