Power conversion device
By employing a multi-layer shielding structure with conductive shielding layers and sealing components in the power conversion device, the impact of busbar noise on the circuit board and peripheral equipment is resolved, achieving effective noise suppression and shielding.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-12-15
- Publication Date
- 2026-04-03
AI Technical Summary
In existing power conversion devices, the high voltage flowing through the bus may cause radiated noise that adversely affects the circuit board and peripheral equipment, so it is necessary to effectively suppress noise barriers.
A conductive shielding layer is used to cover the inner and outer sides of the busbar, combined with conductive sealing components and cooling components, to form a multi-layer shielding structure to prevent the radiation and diffusion of electromagnetic noise.
It effectively suppresses the spatial transmission of electromagnetic noise to the circuit board and peripheral equipment, reduces noise barriers, and improves the noise shielding performance of the power conversion device.
Smart Images

Figure CN115039333B_ABST
Abstract
Description
[0001] Citation of relevant applications
[0002] This application is based on Japanese Patent Application No. 2020-016455, filed on February 3, 2020, the contents of which are incorporated herein by reference. Technical Field
[0003] The disclosure in this specification relates to an electric power conversion device. Background Technology
[0004] Patent document 1 discloses a power conversion device including a busbar that is electrically connected to the positive potential of a battery and is built into a resin housing.
[0005] Existing technical documents
[0006] Patent documents
[0007] Patent Document 1: Japanese Patent Application Publication No. 2016-59202 Summary of the Invention
[0008] According to Patent Document 1, the current flowing in the busbar embedded in the resin housing is at a high voltage. Therefore, radiated noise from the busbar may cause malfunctions to the circuit board inside the housing and peripheral equipment outside the housing.
[0009] The purpose of this disclosure is to provide a power conversion device capable of suppressing noise barriers to circuit boards or peripheral devices.
[0010] The various methods disclosed in this specification employ different technical means to achieve their respective objectives. Furthermore, the symbols enclosed in parentheses in the claims and their respective embodiments are merely examples of how to indicate the correspondence between specific elements described in the following embodiments, and do not limit the scope of the technology.
[0011] One of the disclosed power conversion devices includes: a plurality of semiconductor modules; a capacitor connected to the semiconductor modules in a energizing manner; a circuit board; a frame housing the circuit board, the semiconductor modules, and the capacitor; a busbar connected to at least one of the semiconductor modules and the capacitor in a power path connecting the input-side terminals to the output-side terminals, and having a built-in portion within the frame; and a shielding layer, which is a conductive layer and is disposed within the frame such that it covers the inside or outside of the built-in portion.
[0012] According to this power conversion device, since the busbar is the current path, the built-in portion of the busbar within the frame can release noise. In this power conversion device, noise from various noise sources can be released to the outside of the busbar via the busbar. Since the shielding layer is provided in the frame such that it covers the inside or outside of the built-in portion, it can prevent the radiation and diffusion of electromagnetic noise, etc., from the busbar through the frame. This power conversion device can suppress the spatial conduction of electromagnetic noise, etc., radiated from the busbar through the frame. Therefore, a power conversion device capable of suppressing noise barriers to peripheral devices such as circuit boards or outside the frame can be provided. Attached Figure Description
[0013] Figure 1 This is a circuit diagram of the power conversion device according to the first embodiment.
[0014] Figure 2 This is a cross-sectional view showing the structure of the power conversion device according to the first embodiment.
[0015] Figure 3 This is a cross-sectional view showing the structure of the power conversion device according to the second embodiment.
[0016] Figure 4 This is a cross-sectional view showing the structure of the power conversion device according to the third embodiment. Detailed Implementation
[0017] Hereinafter, various embodiments for implementing this disclosure will be described with reference to the accompanying drawings. In each embodiment, the same reference numerals are sometimes used to denote parts corresponding to those described in previous embodiments, and repeated descriptions are omitted. Where only a portion of the structure is described in each embodiment, other previously described embodiments can be applied to the remaining parts of the structure. Not only are combinations of combinable parts specifically and explicitly described in each embodiment, but even without explicit description, embodiments can be partially combined as long as they do not hinder combination.
[0018] <First Implementation>
[0019] Reference Figure 1 and Figure 2 A first embodiment of a power conversion device, exemplified by the disclosed power conversion device, will be described. The power conversion device can be applied to on-board power conversion devices installed in vehicles such as electric vehicles or hybrid vehicles. Power conversion devices capable of achieving the purposes stated in the specification can be applied to, for example, inverter devices, converter devices, etc. In this embodiment, a power conversion device suitable for an inverter device will be described below.
[0020] The power conversion device 1 includes an inverter circuit 200. For example... Figure 1As shown, the inverter circuit 200 includes multiple semiconductor modules 2. By switching the semiconductor elements 20 (IGBT elements) included in the semiconductor modules 2 on and off, the DC power supplied from the DC power supply 100 is converted into AC power. The vehicle uses the obtained AC power to drive the three-phase AC motor 110 to travel.
[0021] like Figure 2 As shown, the power conversion device 1 includes multiple semiconductor modules 2, capacitors 3, a control circuit board 4, and a housing 5. The capacitors 3 are connected to the semiconductor modules 2 in a energizing manner. The power conversion device 1 includes a cooling member 11 for cooling the semiconductor modules 2. The cooling member 11 is configured to contact the semiconductor modules 2, or to contact them via a thermally conductive member in a manner that allows heat transfer. The cooling member 11 is configured to contact the housing 5, or to contact them via a thermally conductive member in a manner that allows heat transfer. The cooling member 11 is plate-shaped and includes a flow path 11a for the internal flow of cooling fluid. The cooling member 11 is integrally fixed to a mounting platform 13 by fastening members 12 such as bolts or screws. The mounting platform 13 includes, for example, a vehicle-side component or a motor assembly. The mounting platform 13 is included in a mounting member for mounting the housing 5. Since the mounting platform 13 is electrically connected to the ground via surrounding components, the housing 5 is electrically grounded.
[0022] A conductive cooling-side seal 14 is sandwiched between the lower housing 51 and the cooling member 11. The cooling-side seal 14 is located at the junction of the lower housing 51 and the cooling member 11. The cooling-side seal 14 is a conductive gasket that deforms between the lower housing 51 and the cooling member 11 to seal the space between them. The cooling-side seal 14 contacts the outer shielding layers 61b and 62b, which will be described later. Since the cooling-side seal 14 and the outer shielding layers 61b and 62b are conductive, electricity flows between them. Ideally, the cooling-side seal 14 is a thermally conductive component. The cooling-side seal 14 can also be a conductive sheet, grease, or gel-like substance.
[0023] The frame 5 is a container for housing the control circuit board 4, semiconductor module 2, capacitor 3, etc. The frame 5 is formed by assembling multiple housing components. The frame 5 includes at least a first housing component and a second housing component. The first and second housing components are resin molded articles formed containing resin material. For example, the first housing component is a lower housing 51 that surrounds the control circuit board 4, semiconductor module 2, capacitor 3, etc. The control circuit board 4, semiconductor module 2, capacitor 3, etc., are housed in the internal space of the frame 5, such as the internal space of the lower housing 51. For example, the second housing component is a cover component 52 mounted to the lower housing in a manner that covers the internal space of the lower housing 51. The cover component 52 is integrally fixed to the lower housing 51 in a manner that forms a cover from the top. A cover-side sealing portion 15 is provided at the joint between the cover component 52 and the lower housing 51. The cover-side sealing portion 15 is a conductive sealing gasket that is sandwiched between the cover component 52 and the lower housing 51 and seals the two. The side sealing part 15 can also be a conductive sheet component, grease, or gel-like substance.
[0024] The internal space of the frame 5 is divided, for example, into a capacitor housing space and a semiconductor module housing space by a partition. In the semiconductor module housing space, in addition to the semiconductor module 2, a control circuit board 4 and the like are also provided.
[0025] Capacitor 3 is electrically connected to semiconductor module 2. Capacitor 3 functions as a smoothing capacitor to smooth the DC voltage applied to semiconductor module 2. Capacitor 3 includes a capacitor element, a sealing member 31, terminals 32, etc. Capacitor 3 includes a capacitor element housed in a capacitor housing and a sealing member 31 that fills the capacitor housing space and seals the capacitor element. The sealing member 31 seals the capacitor element within the capacitor housing space. The sealing member 31 corresponds to the outer casing of capacitor 3. The capacitor element is connected to electrode plates, etc. For example, a film capacitor can be used as the capacitor element.
[0026] The sealing member 31 is made of, for example, a thermosetting resin such as epoxy resin. The sealing member fills the gap between the capacitor element and terminal 32 and the capacitor housing. According to this structure, the sealing member 31 seals the capacitor element and terminal 32, etc. A portion of the terminal 32, etc., protrudes from the sealing member 31.
[0027] In manufacturing capacitor 3, capacitor elements are housed in capacitor housing space, and then uncured sealing member 31 is injected. Then, heating is used to cure the sealing member 31, thereby manufacturing capacitor 3. Alternatively, capacitor 3 may be configured as an outer casing including the capacitor elements. Capacitor 3 may also have a structure where a thin film covering the elements is the outer casing.
[0028] Semiconductor module 2 includes a main body 21 housing a semiconductor element 20 and power terminals and control terminals 25 protruding from the main body 21. Semiconductor module 2 is also referred to as a power module. The power terminals include an input terminal 23 to which a DC voltage is applied and an output terminal 24 connected to the output bus 72 on one side of the three-phase AC motor 110. The input terminal 23 is connected to the terminal 32 of the capacitor 3 and is electrically connected to the output of the DC power supply 100 via the input bus 71. The control terminal 25 is connected to a control circuit board 4. The control circuit board 4 constitutes a circuit board for mounting electronic components such as arithmetic elements that control the operation of the semiconductor element 20. The switching on and off operation of the semiconductor element 20 is controlled by the control circuit board 4. Through this control, the DC power supplied from the DC power supply 100 is converted into AC power.
[0029] The control circuit board 4 is fixed, for example, by being supported by a boss 41 provided on the lower housing 51. The control circuit board 4 is electrically connected to a connector 42 protruding outside the frame 5 via wiring. The connector 42 can be connected to peripheral devices provided outside the power conversion device 1.
[0030] The power conversion device 1 includes a busbar 7 having an input-side busbar 71 and an output-side busbar 72. The power conversion device 1 includes a busbar 7 for power input and output. The busbar 7 is a conductive member in the power conversion device 1 that forms a power path connecting the terminals on the input side to the terminals on the output side. The busbar 7 is a conductive member connected to at least one of the semiconductor module 2 and the capacitor 3 on either the input or output side.
[0031] The input bus 71 includes: a first terminal portion 71a supplied with power from the DC power supply 100; a built-in portion 71b embedded in the lower housing 51; and a second terminal portion 71c. The first terminal portion 71a and the second terminal portion 71c are portions that protrude from the lower housing 51 to the outside. The second terminal portion 71c is connected to the terminal 32 of the capacitor 3 and the input terminal 23 of the semiconductor module 2.
[0032] The output bus 72 includes: a first terminal portion 72a connected to the output terminal 24; a built-in portion 72b embedded in the lower housing 51; and a second terminal portion 72c. The first terminal portion 72a and the second terminal portion 72c are portions that protrude from the lower housing 51 to the outside. The second terminal portion 72c is a terminal that outputs power to the three-phase AC motor 110. The output bus 72 is also the power path through which the current for output control is carried out by the switching operation of a switching device such as a semiconductor device.
[0033] The power conversion device 1 has a structure that generates and propagates electromagnetic noise that can cause obstruction to electrical components. Hereinafter, electromagnetic noise will sometimes be referred to as noise. In the power conversion device 1, noise is propagated by high-frequency current flowing through the power path. For example, a switching power supply is a source of noise. A switching power supply includes circuits that switch voltage and frequency by interrupting and connecting current through semiconductors. At these points where current is interrupted or connected, high-frequency energy is generated. If this energy leaks to the outside due to propagation or radiation, it becomes a cause of noise obstruction. High-frequency energy is absorbed by capacitors, etc., but because it propagates widely through the busbar 7, it sometimes leaks to the outside. Additionally, electromagnetic noise may also be caused by switching surges caused by interrupting or connecting current through commutators, etc.
[0034] Such electromagnetic noise propagates into the power path via the input bus 71 and the output bus 72. In addition, electromagnetic noise can propagate from the built-in portion 71b and the built-in portion 72b of the bus to the housing 5 and be released inside and outside the housing 5.
[0035] An input-side busbar 71 and an output-side busbar 72 are integrally provided in the lower housing 51. The input-side busbar 71 and the output-side busbar 72 are provided by being embedded in the mold forming the lower housing 51 and integrally molded with the resin by the curing of the surrounding resin portion.
[0036] The first terminal portion 71a and the second terminal portion 71c of the input bus 71 are exposed from the resin portion of the lower housing 51. The first terminal portion 71a may also be integrally fixed and connected to a terminal block for power input. The built-in portion 71b is the portion covered by the resin portion of the lower housing 51 and not exposed to the outside. The built-in portion 71b is covered by the inner resin portion 51a on the inside of the lower housing 51 and by the outer resin portion 51b on the outside. The inside of the lower housing 51 is the side of the internal space of the lower housing 51, and the inner resin portion 51a is in contact with the internal space. The outside of the lower housing 51 is the outer surface side of the lower housing 51 that is not in contact with the internal space, and the outer resin portion 51b is in contact with the external space of the lower housing 51.
[0037] The first terminal portion 72a and the second terminal portion 72c of the output bus 72 are exposed from the resin portion of the lower housing 51. The first terminal portion 72a may also be integrally fixed and connected to the terminal block for power output. The built-in portion 72b is the portion covered by the resin portion of the lower housing 51 and not exposed to the outside. The built-in portion 72b is covered by the inner resin portion 51a on the inside of the lower housing 51 and by the outer resin portion 51b on the outside.
[0038] The power conversion device 1 has conductive shielding layers 61 and 62 on its housing 5. The shielding layers 61 and 62 are positioned to cover the inside of the housing 5 relative to the built-in portions 71b and 72b. The shielding layers 61 and 62 are also positioned to cover the outside of the housing 5 relative to the built-in portions 71b and 72b. The shielding layer 61 functions to prevent electromagnetic noise emitted from the built-in portion 71b from leaking to the outside of the housing 5.
[0039] The shielding layers 61 and 62 can be formed, for example, by a metal or alloy layer plated onto the surface of the frame 5. Alternatively, the shielding layers 61 and 62 can also be copper-plated elements plated onto the surface of the frame 5. This structure results in high conductivity, suppresses the thickness of the shielding layers, and enables lightweight and thin design. The shielding layers 61 and 62 can also be formed as layers embedded within the frame 5. In this case, the shielding layers 61 and 62 are integrally formed with the resin portion of the frame 5 by insert molding during the molding process of the frame 5.
[0040] like Figure 2 As shown, an inner shielding layer 61a is provided in the lower housing 51, covering the inner side of the frame 5 relative to the built-in portion 71b. An inner shielding layer 62a is provided in the lower housing 51, covering the inner side of the frame 5 relative to the built-in portion 72b. An outer shielding layer 61b is provided in the lower housing 51, covering the outer side of the frame 5 relative to the built-in portion 71b. An outer shielding layer 62b is provided in the lower housing 51, covering the outer side of the frame 5 relative to the built-in portion 72b.
[0041] Ideally, the inner shielding layer 61a and inner shielding layer 62a are arranged in the lower housing 51 in a manner that completely overlaps with the inner surface forming the internal space. This allows for high-precision shielding of electromagnetic noise radiated from the inner surface of the lower housing 51 into the internal space over a large area. Ideally, the outer shielding layer 61b and outer shielding layer 62b are arranged in the lower housing 51 in a manner that completely overlaps with the outer surface located on the opposite side to the inner surface. This allows for high-precision shielding of electromagnetic noise radiated from the outer surface of the lower housing 51 into the outside of the frame 5 over a large area.
[0042] A shielding layer, which is a conductive layer, is provided on the cover member 52, which serves as a second housing member. The shielding layer covers either the inner or outer side of the cover member 52. For example... Figure 2 As shown, ideally, the cover member 52 has an inner cover-side shielding layer 52a and an outer cover-side shielding layer 52b. The inner cover-side shielding layer 52a covers the inner side of the cover member 52 opposite to the internal space. The outer cover-side shielding layer 52b is provided in the cover member 52 in a manner that completely overlaps with the outer side located on the opposite side to the inner side.
[0043] The side shielding layers 52a and 52b can also be formed as layers built into the inside of the cover member 52. In this case, the side shielding layers 52a and 52b are integrally formed with the resin portion of the cover member 52 by insert molding during the molding of the cover member 52.
[0044] The cover-side sealing portion 15 is sandwiched between the inner cover-side shielding layer 52a and the inner shielding layers 61a and 62a. The cover-side sealing portion 15 is held and in contact with the inner cover-side shielding layer 52a and the inner shielding layers 61a and 62a. Since the cover-side sealing portion 15, the inner cover-side shielding layer 52a, and the inner shielding layers 61a and 62a are conductive, they are energized together. Because these three components constitute a conductive object, electromagnetic noise can be dispersed, thereby reducing the noise intensity per unit volume. Due to this effect, the power conversion device 1 provides a structure capable of suppressing external leakage of electromagnetic noise.
[0045] The effects of the power conversion device 1 according to the first embodiment will be explained. The power conversion device 1 includes: a plurality of semiconductor modules 2; capacitors 3 connected to the semiconductor modules 2 in a manner that enables them to conduct electricity; and a housing 5 that houses the control circuit board 4, the semiconductor modules 2, and the capacitors 3. The power conversion device 1 includes a busbar 7 connected to at least one of the semiconductor modules 2 and the capacitors 3 in a power path that connects the input-side terminals and the output-side terminals. The busbar 7 has built-in portions 71b and 72b within the housing 5. The power conversion device 1 includes shielding layers 61 and 62, which are conductive layers and are disposed within the housing 5 such that they cover the inside or outside of the built-in portions 71b and 72b.
[0046] In the power conversion device 1, since the busbar forms the path for current flow, noise can be released from the built-in portions 71b and 72b of the busbar. In the power conversion device 1, noise from various noise sources can be released from the frame 5 via the busbar. Shielding layers 61 and 62 provided in the frame 5 cover the inside or outside of the built-in portions 71b and 72b. This structure helps prevent electromagnetic noise from the busbar 7 from radiating or spreading through the frame 5. Therefore, the power conversion device 1 can suppress the spatial conduction of electromagnetic noise radiated from the busbar 7 into or outside the frame via the frame 5. This power conversion device 1 can suppress noise barriers caused to electrical components such as control circuit boards or peripheral equipment outside the frame.
[0047] The shielding layers 61 and 62 are electrically grounded relative to the mounting member on which the frame 5 is mounted. According to this structure, since electromagnetic noise propagating to the shielding layers 61 and 62 can be smoothly escaped to the outside through the mounting member, the noise barrier suppression effect can be improved.
[0048] As a shielding layer, the power conversion device 1 includes inner shielding layers 61a and 62a, which are disposed on the frame 5 such that they cover the inner side of the built-in parts 71b and 72b. According to this structure, electromagnetic noise and the like can be suppressed from the busbar 7 into the interior space of the frame 5 by the inner shielding layers 61a and 62a. The power conversion device 1 can suppress the spatial conduction of electromagnetic noise and the like from the busbar 7 through the frame 5 into the frame, and can suppress noise barriers to electrical components such as the control circuit board 4 and the capacitor 3.
[0049] As a shielding layer, the power conversion device 1 includes outer shielding layers 61b and 62b, which are disposed on the frame 5 such that they cover the outside of the built-in portions 71b and 72b. According to this structure, the outer shielding layers 61b and 62b can suppress electromagnetic noise radiation from the busbar 7 to the surrounding area of the frame 5. The power conversion device 1 can suppress the spatial conduction of electromagnetic noise from the busbar 7 through the frame 5 to the outside, and can suppress noise barriers to peripheral equipment located around the frame 5.
[0050] The shielding layers are provided on the frame 5 in such a way that they cover the inner and outer sides relative to the built-in parts 71b and 72b. According to this structure, the inner shielding layers 61a and 62a and the outer shielding layers 61b and 62b can suppress the radiation of electromagnetic noise from the busbar 7 into and out of the frame 5. The power conversion device 1 can suppress noise interference targeting electrical components inside the frame, such as the control circuit board 4 and capacitors 3, as well as peripheral equipment around the frame.
[0051] The power conversion device 1 includes: a cooling member 11 capable of cooling a semiconductor module 2; and a conductive cooling-side sealing portion 14 sandwiched between and sealing the housing 5 and the cooling member 11. The cooling-side sealing portion 14 contacts the outer shielding layers 61b and 62b provided on the housing 5 in a manner that covers the outer side of the built-in portions 71b and 72b. According to this structure, the sealing between the housing 5 and the cooling member 11 can be ensured by the cooling-side sealing portion 14. Furthermore, the outer shielding layers 61b and 62b are in close contact with the cooling-side sealing portion 14. The cooling-side sealing portion 14 contacts the outer shielding layers 61b and 62b provided on the housing 5 in a manner that covers the outer side of the built-in portions 71b and 72b.
[0052] According to this structure, the thickness of the shieldable component on the mounting side of the frame 5 can be increased by using the cooling section-side sealing portion 14 and the outer shielding layers 61b and 62b. This provides a power conversion device 1 that improves the shielding performance against electromagnetic noise and other electromagnetic interference on the mounting side of the frame 5. Furthermore, electromagnetic noise and other electromagnetic interference retained in the outer shielding layers 61b and 62b can be moved to the cooling member 11 via the conductive cooling section-side sealing portion 14. The electromagnetic noise and other electromagnetic interference that has moved to the cooling member 11 is easily released to the outside from the cooling member 11. Therefore, a power conversion device 1 that suppresses the spatial conduction of electromagnetic noise and other electromagnetic interference to peripheral equipment around the frame can be provided.
[0053] The frame 5 includes: a first housing member having a built-in portion and a shielding layer thereon; and a second housing member installed on the first housing member to cover the internal space of the first housing member. A shielding layer, which is conductive, is provided on the second housing member and covers its inner or outer side. Furthermore, according to the power conversion device 1, electromagnetic noise and other electromagnetic noise conducted into the internal space of the frame 5 and emitted to the outside via the second housing member can be suppressed by the shielding layer. This power conversion device can shield electromagnetic noise and other electromagnetic noise emitted into the internal space that cannot be blocked by shielding layers 61 and 62, thereby suppressing external emission.
[0054] The shielding layer 52b is provided to cover the outer side of the second housing member. Based on this structure, a power conversion device can be provided that shields electromagnetic noise and other electromagnetic interference transmitted from the interior space of the frame 5 to the second housing member on the outer surface side of the second housing member.
[0055] The shielding layer 52a is provided to cover the inner side of the second housing member. According to this structure, a power conversion device can be provided that shields electromagnetic noise and other electromagnetic noise conducted to the interior space of the frame 5 from the inner surface of the second housing member and suppresses the conduction to the second housing member.
[0056] The shielding layer is provided to cover both the inner and outer sides of the second housing member. This power conversion device can shield electromagnetic noise and other electromagnetic interference transmitted from the interior space of the frame 5 to the second housing member in two stages, on both the inner and outer surfaces of the second housing member. Therefore, a power conversion device with extremely high suppression effect on electromagnetic noise and other electromagnetic interference radiated to the outside of the housing via the second housing member can be provided.
[0057] The power conversion device 1 includes a cover-side sealing portion 15, which serves as a conductive sealing portion and is sandwiched between a first housing member and a second housing member for sealing. The shielding layer includes inner shielding layers 61a and 62a disposed on the first housing member in such a way that they cover the inner side relative to the built-in portions 71b and 72b. The cover-side sealing portion 15 is in contact with the cover-side shielding layer 52a and the inner shielding layers 61a and 62a disposed inside the second housing member.
[0058] According to this structure, the sealing between the first housing member and the second housing member can be ensured by the cover-side sealing portion 15. Furthermore, the cover-side sealing portion 15, the cover-side shielding layer 52a, and the inner shielding layers 61a and 62a are in close contact. Therefore, electromagnetic noise and other noise trapped within the frame 5 can be shielded by the cover-side sealing portion 15, the cover-side shielding layer 52a, and the inner shielding layers 61a and 62a. Thus, a power conversion device 1 that can suppress the spatial conduction of electromagnetic noise and other noise into the interior space of the frame 5 can be provided.
[0059] <Second Implementation>
[0060] Reference Figure 3 The second embodiment will now be described. The power conversion device 101 in the second embodiment differs from that in the first embodiment in that it includes a shield-side shielding layer, shielding layer 161, and shielding layer 162. The structures, functions, and effects not specifically described in the second embodiment are the same as in the first embodiment; the differences from the first embodiment will be described below.
[0061] like Figure 3 As shown, the frame 105 includes a lower housing 151 and a cover member 152. The cover-side shielding layer has an inner cover-side shielding layer 52a that covers the inner side of the cover member 152. The cover member 152 has no shielding layer on its outer side. The shielding layer 161 includes an inner shielding layer 61a that covers the inner side of the lower housing 151. The lower housing 151 has no outer shielding layer on its outer side. The shielding layer 162 includes an inner shielding layer 62a that covers the inner side of the lower housing 151. A cooling section-side sealing portion 14 is sandwiched between the lower housing 151 and the cooling member 11. The cooling section-side sealing portion 14 deforms between the lower housing 151 and the cooling member 11 to seal the space between them.
[0062] According to the second embodiment, the power conversion device 101 includes inner shielding layers 61a and 62a disposed in the lower housing 151 such that they cover the inner side relative to the built-in portions 71b and 72b. With this structure, electromagnetic noise and the like can be suppressed from the busbar 7 into the interior space of the frame 105 by the inner shielding layers 61a and 62a. The power conversion device 101 can suppress the spatial conduction of electromagnetic noise and the like from the busbar 7 through the frame 105 into the interior space, and can suppress noise barriers to electrical components such as the control circuit board 4.
[0063] The shielding layer 52a is provided to cover the inner side of the shield member 152. According to this structure, a power conversion device 101 can be provided that shields electromagnetic noise and the like conducted to the interior space of the frame 105 from the inner surface of the shield member 152 and suppresses the conduction to the shield member 152.
[0064] <Third Implementation Method>
[0065] Reference Figure 4 The third embodiment will now be described. The power conversion device 201 of the third embodiment differs from that of the first embodiment in that it has a shield-side shielding layer, shielding layer 261, and shielding layer 262. The structures, functions, and effects not specifically described in the third embodiment are the same as those in the first embodiment; the differences from the first embodiment will be described below.
[0066] like Figure 4 As shown, the frame 205 includes a lower housing 251 and a cover member 252. The cover-side shielding layer has an outer cover-side shielding layer 52b that covers the outer side of the cover member 252. The cover member 252 has a structure where no shielding layer is provided on its inner side. The shielding layer 261 includes an outer shielding layer 61b that covers the outer side of the lower housing 151. The lower housing 251 has a structure where no inner shielding layer is provided on its inner side. The shielding layer 262 includes an outer shielding layer 62b that covers the inner side of the lower housing 151.
[0067] According to the second embodiment, the power conversion device 201 includes outer shielding layers 61b and 62b disposed on the lower housing 251 in such a way that they cover the outside relative to the built-in portions 71b and 72b. With this structure, electromagnetic noise and the like can be suppressed from the busbar 7 to the surrounding area of the frame 205 by the outer shielding layers 61b and 62b. The power conversion device 201 can suppress the spatial conduction of electromagnetic noise and the like from the busbar 7 through the frame 5 to the outside, and can suppress noise barriers to peripheral equipment present around the frame 205.
[0068] The shielding layer 52b is provided to cover the outer side of the shield member 252. According to this structure, a power conversion device 201 can be provided that shields electromagnetic noise and the like conducted from the internal space of the frame 205 to the shield member 252 on one side of the outer surface of the shield member 252.
[0069] <Other Implementation Methods>
[0070] This disclosure is not limited to the illustrated embodiments. This disclosure includes illustrated embodiments and modifications made by those skilled in the art based thereon. For example, the disclosure is not limited to the combinations of components and elements shown in the embodiments, and various modifications can be made to implement it. The disclosure can be implemented in various combinations. This disclosure may have additional portions that can be added to the embodiments. The disclosure includes structures that omit components and elements of the embodiments. The disclosure includes substitutions or combinations of components and elements between one embodiment and another. The scope of the disclosure is not limited to the description of the embodiments. The scope of the disclosure should be understood as being expressed by the description of the claims, and also includes all modifications within the meaning and scope of equivalence to the description of the claims.
[0071] The power conversion device capable of achieving the objectives disclosed in the specification is related to the structure of the shielding layer and is not limited to the embodiments shown in the drawings. For example, the power conversion device includes a device having the structure shown below. The cover member of the second embodiment may also be a structure that does not include the inner cover-side shielding layer 52a. The cover member of the third embodiment may also be a structure that does not include the outer cover-side shielding layer 52b. The cover member of the first embodiment may also be a structure that does not include the inner cover-side shielding layer 52a. The cover member of the first embodiment may also be a structure that does not include the outer cover-side shielding layer 52b. The cover member of the first embodiment may also be a structure that does not include a shielding layer.
Claims
1. A power conversion device, comprising: Multiple semiconductor modules; A capacitor connected to the semiconductor module in a manner that allows it to conduct electricity; Circuit board; A frame that houses the circuit board, the semiconductor module, and the capacitor; The busbar is a busbar connected to at least one of the semiconductor module and the capacitor in the power path that connects the input-side terminal portion and the output-side terminal portion, and has a built-in portion built into the frame; A shielding layer, which is a conductive layer, is provided in such a way that it covers the inside or outside of the built-in part. A cooling component capable of cooling the semiconductor module; and A cooling section side sealing part, which is a conductive sealing part, is sandwiched between the frame and the cooling member to provide a seal. The shielding layer includes an outer shielding layer, which is disposed on the frame in such a way that it covers the outside of the built-in part. The cooling section side sealing portion contacts the shielding layer disposed on the frame in such a way that it covers the outside relative to the built-in portion.
2. A power conversion device, comprising: Multiple semiconductor modules; A capacitor connected to the semiconductor module in a manner that allows it to conduct electricity; Circuit board; A frame that houses the circuit board, the semiconductor module, and the capacitor; The busbar is a busbar connected to at least one of the semiconductor module and the capacitor in the power path that connects the input-side terminal portion and the output-side terminal portion, and has a built-in portion built into the frame; A shielding layer, which is a conductive layer, is provided in such a way that it covers the inner and outer sides relative to the built-in portion. A cooling component capable of cooling the semiconductor module; and A cooling section side sealing part, which is a conductive sealing part, is sandwiched between the frame and the cooling member to provide a seal. The cooling section side sealing portion contacts the shielding layer disposed on the frame in such a way that it covers the outside relative to the built-in portion.
3. The power conversion device as described in claim 1 or 2, characterized in that, The frame includes a first shell component and a second shell component. The first shell component houses the built-in part and is provided with the shielding layer. The second shell component is installed on the first shell component in a manner that covers the internal space of the first shell component. A shielding layer, which is a conductive layer, is provided on the second housing member and covers the inner and / or outer sides of the second housing member.
4. The power conversion device as described in claim 3, characterized in that, It includes a cover-side sealing portion, which is a conductive sealing portion, and is sandwiched between the first housing member and the second housing member to provide a seal. The shielding layer includes an inner shielding layer disposed on the first housing member in such a manner that it covers the inner side relative to the built-in portion. The cover-side sealing portion contacts the cover-side shielding layer and the inner shielding layer disposed inside the second housing component.
5. A power conversion device, comprising: Multiple semiconductor modules; A capacitor connected to the semiconductor module in a manner that allows it to conduct electricity; Circuit board; A frame that houses the circuit board, the semiconductor module, and the capacitor; The busbar is a busbar connected to at least one of the semiconductor module and the capacitor in the power path that connects the input-side terminal portion and the output-side terminal portion, and has a built-in portion built into the frame; A shielding layer, which is a conductive layer, is provided in such a way that it is covered on the inside and / or outside of the built-in part; A first housing component, wherein the built-in portion is internally located and a shielding layer is provided thereon; A second housing component is mounted on the first housing component in such a way that it covers the internal space of the first housing component; as well as The cover-side sealing portion is a conductive sealing portion that is sandwiched between the first housing member and the second housing member to provide a seal. A conductive layer is provided on the second housing member, which is a shielding layer covering the inner or outer side of the second housing member. The shielding layer is configured to cover the inner side of the second housing component. The shielding layer includes an inner shielding layer disposed on the first housing member in such a manner that it covers the inner side relative to the built-in portion. The cover-side sealing portion contacts the cover-side shielding layer and the inner shielding layer disposed inside the second housing component.
6. A power conversion device, comprising: Multiple semiconductor modules; A capacitor connected to the semiconductor module in a manner that allows it to conduct electricity; Circuit board; A frame that houses the circuit board, the semiconductor module, and the capacitor; The busbar is a busbar connected to at least one of the semiconductor module and the capacitor in the power path that connects the input-side terminal portion and the output-side terminal portion, and has a built-in portion built into the frame; A shielding layer, which is a conductive layer, is provided in such a way that it is covered on the inside and / or outside of the built-in part; A first housing component, wherein the built-in portion is internally located and the shielding layer is provided; A second housing component is mounted on the first housing component in such a way that it covers the internal space of the first housing component; as well as The cover-side sealing portion is a conductive sealing portion that is sandwiched between the first housing member and the second housing member to provide a seal. A conductive layer is provided on the second housing member, forming a shielding layer that covers the inner and outer sides of the second housing member. The shielding layer includes an inner shielding layer disposed on the first housing member in such a manner that it covers the inner side relative to the built-in portion. The cover-side sealing portion contacts the cover-side shielding layer and the inner shielding layer disposed inside the second housing component.
7. The power conversion device as described in claim 5 or 6, characterized in that, The shielding layer is electrically grounded relative to the mounting components for mounting the frame.
8. The power conversion device as described in claim 5 or 6, characterized in that, The shielding layer includes an outer shielding layer, which is disposed on the frame in such a way that it covers the outside of the built-in part.
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