Method and apparatus for processing substrates

Abstract

The present invention relates to a method and apparatus for processing a substrate. The present invention provides a method for processing a substrate. The method for processing a substrate includes: a pressurizing step for increasing the pressure of an internal space of a chamber by supplying a processing fluid to the internal space after the substrate is placed in the internal space; a flowing step for generating a flow of the processing fluid by a combination of supplying the processing fluid to the internal space and discharging the processing fluid from the internal space; and a decompression step for reducing the pressure of the internal space by discharging the processing fluid from the internal space, wherein the pressurizing step includes: a bottom surface supply process for increasing the pressure of the internal space by supplying the processing fluid to the back surface of the substrate placed in the internal space; and a top surface supply process for increasing the pressure of the internal space by supplying the processing fluid to the top surface of the substrate placed in the internal space.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2021-0033257, filed on March 15, 2021, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concepts described herein relate to a substrate processing method and a substrate processing apparatus. Background Art

[0004] To manufacture semiconductor devices, a desired pattern is formed on a substrate through various processes such as photography, etching, ashing, ion implantation, and thin film deposition. Various process liquids and process gases are used in each process. Furthermore, a drying process is performed on the substrate to remove the process liquid used to process the substrate. Typically, the drying process for removing the process liquid from the substrate includes a spin drying process in which the substrate is rotated at high speed and the centrifugal force generated by the rotation of the substrate removes the process liquid remaining on the substrate. However, this spin drying method carries a high risk of tilting the pattern formed on the substrate. Therefore, a supercritical drying process has recently been used. In this supercritical drying process, the substrate is introduced into a chamber capable of maintaining a high-pressure and high-temperature atmosphere. Then, supercritical carbon dioxide is supplied to the substrate to remove the process liquid (e.g., an organic solvent, a developer solvent, etc.) remaining on the substrate. Supercritical carbon dioxide has high solubility and high permeability. Therefore, when supercritical carbon dioxide is supplied to the substrate, it easily penetrates into the pattern on the substrate. Consequently, process liquid remaining between the patterns formed on the substrate can be easily removed.

[0005] Figure 1 A diagram illustrating pressure changes in a chamber when a conventional supercritical drying process is performed. Figure 1, the conventional supercritical drying process includes a pressurization step S100, a process step S200 and a decompression step S300. In the pressurization step S100, carbon dioxide is supplied into the chamber to increase the pressure in the chamber to a first pressure CP1, which is a target pressure. The first pressure CP1 is generally higher than the critical pressure at which carbon dioxide can maintain a supercritical state. In the process step S200, carbon dioxide is repeatedly discharged from the space in the chamber / supplied to the space in the chamber. Therefore, the pressure in the chamber varies between the first pressure CP1 and the second pressure CP2. In the decompression step S300, carbon dioxide is discharged from the space in the chamber to reduce the pressure in the chamber to approximately atmospheric pressure. As described above, in the conventional supercritical drying process, in the process step S200, the pressure in the chamber is repeatedly changed (due to the pressure swing caused by the partial pressure difference) to remove the processing liquid on the substrate from the substrate.

[0006] Typically, in the pressurizing step S100, as Figure 2 As shown, carbon dioxide F is supplied upward to the back side (bottom surface) of the substrate W to increase the pressure of the space in the chamber. This is because if carbon dioxide F is supplied downward to the front side (top surface) of the substrate W when the pressure of the space in the chamber has not reached the critical pressure described above, the liquid film formed by the treatment liquid L remaining on the top surface of the substrate W may break or uneven drying may occur. However, the evaporation of the treatment liquid L remaining on the substrate begins in the pressurization step S100. That is, when carbon dioxide F is supplied to the back side of the substrate W as described above, the supplied carbon dioxide F forms an upward flow as a whole. The upward flow causes the liquid film formed by the treatment liquid L on the top surface of the substrate W to be curved. The upward flow causes a large number of defects and uneven drying marks on the substrate W. The drying marks spread rapidly in the edge area of the substrate W where the liquid film is relatively thin. As described above, even if the pressure of the space in the chamber is further changed in process step S200, or if the supply flow rate or supply speed of carbon dioxide is increased, the drying marks that appear on the substrate W will not be improved. Summary of the Invention

[0007] Embodiments of the inventive concept provide a substrate processing method and a substrate processing apparatus for efficiently processing a substrate.

[0008] Embodiments of the inventive concept also provide a substrate processing method and a substrate processing apparatus for increasing drying process efficiency of a substrate.

[0009] Embodiments of the inventive concept also provide a substrate processing method and a substrate processing apparatus for effectively removing a processing liquid remaining on a substrate.

[0010] Embodiments of the inventive concept also provide a substrate processing method and a substrate processing apparatus for effectively removing a developing solution remaining on a substrate.

[0011] Embodiments of the inventive concept also provide a substrate processing method and a substrate processing apparatus for minimizing a drying mark occurring on a substrate during a drying process performed on the substrate.

[0012] The technical objectives of the present inventive concept are not limited to the above-mentioned objectives, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0013] The present invention provides a method for processing a substrate. The method includes: a pressurizing step for increasing the pressure of an internal space of a chamber by supplying a processing fluid to the internal space after the substrate is placed in the internal space; a flowing step for generating a flow of the processing fluid by a combination of supplying the processing fluid to the internal space and discharging the processing fluid from the internal space; and a decompressing step for reducing the pressure of the internal space by discharging the processing fluid from the internal space, wherein the pressurizing step includes: a bottom surface supply process for increasing the pressure of the internal space by supplying the processing fluid to the back side of the substrate placed in the internal space; and a top surface supply process for increasing the pressure of the internal space by supplying the processing fluid to the top side of the substrate placed in the internal space.

[0014] In one embodiment, the top surface supply process is performed after the bottom surface supply process.

[0015] In one embodiment, the pressurizing step further includes a discharging process for discharging the processing fluid supplied to the inner space after the top surface supplying process.

[0016] In one embodiment, the top surface supply process and the exhaust process are performed continuously.

[0017] In one embodiment, the exhausting process exhausts the treatment fluid supplied to the inner space in a downward direction.

[0018] In one embodiment, the top surface supply process supplies the processing fluid toward a top surface of the substrate.

[0019] In one embodiment, the pressurizing step increases the pressure of the internal space to a preset pressure, and the top surface supplying process and the exhausting process are performed before the pressure of the internal space reaches the preset pressure.

[0020] In one embodiment, a lower limit of a pressure range of the internal space changed by the top surface supply process and the exhaust process is higher than a critical pressure of the processing fluid.

[0021] In one embodiment, the pressure range of the internal space changed by the top surface supply process and the exhaust process includes a critical pressure of the processing fluid.

[0022] The present invention provides a method for processing a substrate, which uses a treatment fluid in a supercritical state to dry the substrate. The method includes: a transfer step of placing the substrate, whose top surface is wetted by the treatment fluid, into an interior space of a chamber; a pressurizing step of increasing the pressure of the interior space to a predetermined pressure by supplying the treatment fluid to the interior space after the transfer step; and a treatment step of supplying the treatment fluid to the interior space and / or discharging the treatment fluid from the interior space to remove the treatment fluid from the substrate, wherein the pressurizing step includes: a top surface supply process of increasing the pressure of the interior space by supplying the treatment fluid toward the top surface of the substrate placed in the interior space; and a discharging process of discharging the treatment fluid supplied to the interior space.

[0023] In one embodiment, the pressurizing step further includes a bottom surface supply process, which increases the pressure of the internal space by supplying the processing fluid toward the back side of the substrate placed in the internal space, and wherein the top surface supply process is performed later than the bottom surface supply process.

[0024] In one embodiment, the processing fluid supplied at the top surface supply process is supplied to the top surface of the substrate in a downward direction.

[0025] In one embodiment, the treatment fluid includes carbon dioxide (CO2).

[0026] In one embodiment, the processing liquid is a developer.

[0027] In one embodiment, the developer includes n-butyl acetate.

[0028] The present invention provides a substrate processing apparatus. The apparatus includes: a main body having an interior space; a support member for supporting a substrate in the interior space; a fluid supply unit for supplying a processing fluid for drying the substrate into the interior space; a fluid discharge unit for discharging the processing fluid from the interior space; and a controller for controlling the fluid supply unit and the fluid discharge unit, wherein the fluid supply unit includes: a top supply line for supplying the processing fluid toward a top surface of the substrate supported by the support member; and a bottom supply line for supplying the processing fluid toward a back surface of the substrate supported by the support member. The controller controls the fluid supply unit and the fluid discharge unit so that at least one of the top supply line supplies the processing fluid and the fluid discharge unit discharges the processing fluid during a pressurizing step of increasing the pressure of the interior space to a predetermined pressure after the substrate is placed in the interior space.

[0029] In one embodiment, the controller controls the fluid supply unit so that the supply of the treatment fluid to the bottom supply line is performed during the pressurizing step and the supply time of the treatment fluid to the top supply line is later than that of the bottom supply line.

[0030] In one embodiment, the top supply line is configured to supply the processing fluid toward a top surface of the substrate supported by the support member.

[0031] In one embodiment, the fluid discharge unit includes: a fluid discharge pipeline, which is used to communicate with the internal space; and a discharge valve, which is installed at the fluid discharge pipeline, and wherein the fluid discharge pipeline is configured so that when the treatment fluid is discharged, the treatment fluid flows from the top to the bottom of the internal space.

[0032] In one embodiment, the substrate processing equipment further includes: a heating component for increasing the temperature of the internal space so that the processing fluid supplied to the internal space is converted into a supercritical state or can maintain the supercritical state, and wherein the processing fluid supplied by the fluid supply unit contains carbon dioxide (CO2).

[0033] According to embodiments of the inventive concept, a substrate may be efficiently processed.

[0034] According to embodiments of the inventive concept, the efficiency of a drying process of a substrate may be increased.

[0035] According to embodiments of the inventive concept, a processing liquid remaining on a substrate may be effectively removed.

[0036] According to embodiments of the inventive concept, a developing solution remaining on a substrate may be effectively removed.

[0037] According to embodiments of the inventive concept, drying marks occurring on a substrate may be minimized while a drying process is performed on the substrate.

[0038] The effects of the inventive concept are not limited to the above-mentioned objects, and other unmentioned technical objects will become apparent to those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, in which like reference numerals designate similar parts throughout the various drawings unless otherwise specified.

[0040] Figure 1 is a view illustrating a pressure change in a chamber when a conventional supercritical drying process is performed.

[0041] Figure 2 is exemplified in Figure 1 The upward airflow generated during the pressurization step and Figure 1 FIG. 4 is a view of a liquid film formed on a substrate during a pressurization step.

[0042] Figure 3 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the inventive concept.

[0043] Figure 4 is a schematic illustration Figure 3 A view of one embodiment of a liquid processing chamber.

[0044] Figure 5 is a schematic illustration Figure 3 A view of one embodiment of a drying chamber.

[0045] Figure 6 is a flowchart illustrating a substrate processing method according to an embodiment of the inventive concept.

[0046] Figure 7 It is an example execution Figure 6 Figure 2. View of the liquid handling chamber for the liquid handling steps.

[0047] Figure 8 yes Figure 6 Detailed flow chart of the drying steps.

[0048] Figure 9 is a graph illustrating an example of pressure change in the internal space of the main body when the drying step of the present inventive concept is performed.

[0049] Figure 10 It is an example execution Figure 8and Figure 9 View of the underside of the drying chamber supplying the process.

[0050] Figure 11 It is an example execution Figure 8 and Figure 9 View of the drying chamber of the emission process.

[0051] Figure 12 It is an example execution Figure 8 and Figure 9 View of the drying chamber of the top supply process.

[0052] Figure 13 is a graph illustrating another example of a pressure change in the internal space of the main body when the drying step of the present inventive concept is performed.

[0053] Figure 14 is a graph illustrating another example of a pressure change in the internal space of the main body when the drying step of the present inventive concept is performed.

[0054] List of Reference Numerals

[0055] 10: Index module

[0056] 12: Loading port

[0057] 14: Index Framework

[0058] 20: Processing module

[0059] 30: Controller

[0060] 120: Indexing Robot

[0061] 122, 322: Hand

[0062] 124, 324: guide rail

[0063] 200: Buffer unit

[0064] 220: Buffer

[0065] 300: Transfer Room

[0066] 320: Transfer Robot

[0067] 400: Liquid Processing Room

[0068] 410: Shell

[0069] 420: Cup

[0070] 422: First recycling container

[0071] 424: Second recycling container

[0072] 426: Third recycling container

[0073] 422a: First Entrance

[0074] 424a: Second Entrance

[0075] 426a: Third Entrance

[0076] 440: Support unit

[0077] 442: Support plate

[0078] 442a: Support needle

[0079] 442b: Chuck needle

[0080] 444: Drive shaft

[0081] 446: Drive

[0082] 460: Liquid supply unit

[0083] 462: Nozzle

[0084] 480: Raise / lower unit

[0085] 500: Drying room

[0086] 510: Main body

[0087] 511: Interior Space

[0088] 512: Top body

[0089] 514: Bottom body

[0090] 520: Heating component

[0091] 530: Fluid supply unit

[0092] 531: Fluid supply source

[0093] 533: First supply line

[0094] 535: First supply valve

[0095] 537: Second supply line

[0096] 539: Second supply valve

[0097] 540: Supporting member

[0098] 550: Fluid discharge unit

[0099] 551: Fluid discharge line

[0100] 553: Discharge valve

[0101] 560: Lifting / Lowering Components

[0102] C: Container

[0103] F: Processing fluid

[0104] L: Handling liquid

[0105] W: substrate

[0106] X: First direction

[0107] Y: Second direction

[0108] Z: Third direction

[0109] S10: Liquid handling step

[0110] S20: Transfer Step

[0111] S30: Drying step

[0112] S31-1: Bottom (back) surface supply process

[0113] S31-2: Emission Process

[0114] S31-3: Top (front) surface supply process

[0115] S31: Pressurization step

[0116] S32: Flow step

[0117] S33: Decompression Step

[0118] S100: Pressurization step

[0119] S200: Process steps

[0120] S300: Decompression Steps DETAILED DESCRIPTION

[0121] The present invention is susceptible to various modifications and forms, and specific embodiments thereof will be illustrated in the drawings and described in detail. However, the embodiments of the present invention are not intended to limit the specific disclosed forms, and it should be understood that the present invention includes all variations, equivalents, and substitutions included within the spirit and technical scope of the present invention. In describing the present invention, detailed descriptions of related known technologies may be omitted when this may obscure the essence of the present invention.

[0122] The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used herein, unless the context clearly indicates otherwise, the singular forms "a / an" and "the" are intended to also include multiple forms. It will be further understood that the terms "comprising" and / or "including" when used in this specification specify the presence of stated features, wholes, steps, operations, components and / or assemblies, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, components, assemblies and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. In addition, the term "example" is intended to refer to an instance or icon.

[0123] It should be understood that although the terms first, second, third, etc. may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one component, part, region, layer, or portion from another region, layer, or portion. Thus, a first component, part, region, layer, or portion discussed below could be referred to as a second component, part, region, layer, or portion without departing from the teachings of the present inventive concept.

[0124] It should be understood that when a component or layer is referred to as being "on," "connected to," "coupled to," or "overlying" another component or layer, it can be directly located on, connected to, coupled to, or overlying the other component or layer or intervening components or layers may exist. In contrast, when a component is referred to as being "directly on," "directly connected to," or "directly coupled to" another component or layer, there are no intervening components or layers. Other terms such as "between," "adjacent," "proximate," etc. should be interpreted in the same manner.

[0125] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by those skilled in the art. Unless explicitly defined in this application, terms such as those defined in commonly used dictionaries should be interpreted as being consistent with the context of the relevant technology and should not be interpreted as ideal or overly formal.

[0126] In the following, reference will be made to Figures 3 to 14 Exemplary embodiments of the inventive concept are described.

[0127] Figure 3 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the inventive concept.

[0128] Reference Figure 3The substrate processing apparatus includes an index module 10, a processing module 20, and a controller 30. The index module 10 and the processing module 20 are arranged along a direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is referred to as a first direction X, a direction perpendicular to the first direction X is referred to as a second direction Y, and a direction perpendicular to both the first direction X and the second direction Y is referred to as a third direction Z.

[0129] The index module 10 transfers substrates W from a container C storing substrates W to the processing module 20 and stores substrates W processed in the processing module 20 in the container C. The longitudinal direction of the index module 10 is arranged in the second direction Y. The index module 10 has a load port 12 and an index frame 14. The index frame 14 is located between the load port 12 and the processing module 20. The container C storing substrates W is placed on the load port 12. A plurality of load ports 12 may be provided, and the plurality of load ports 12 may be arranged along the second direction Y.

[0130] A sealed container such as a front-opening unified container (FOUP) may be used for the container C. The container C may be placed on the load port 12 by a transfer device (not shown) such as an overhead transfer machine, an overhead conveyor, or an unmanned guided vehicle (AGV), or by an operator.

[0131] The index frame 14 is provided with an index robot 120. In the index frame 14, a guide rail 124 may be provided whose longitudinal direction is in the second direction Y, and the index robot 120 may be provided to be movable along the guide rail 124. The index robot 120 may include a hand 122 on which the substrate W is placed, and the hand 122 may be capable of moving forward and backward, rotating about the third direction Z, and moving along the third direction Z. A plurality of hands 122 are provided to be spaced apart in the up / down direction, and the hands 122 may be movable forward and backward independently of each other.

[0132] The controller 30 can control the substrate processing equipment. The controller may include a process controller, for example, a microprocessor (computer) that performs control of the substrate processing equipment, a user interface such as a keyboard in which an operator performs command input operations or the like to manage the substrate processing equipment, a display and the like for visualizing and displaying the operating conditions of the substrate processing equipment, and a storage unit for storing control formulas for executing processes performed in the substrate processing equipment under the control of the process controller, various data, and programs (i.e., processing schemes) for executing various processes in each component according to processing conditions. In addition, the user interface and the storage unit may be connected to the process controller. The processing scheme may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0133] The controller 30 may control the substrate processing apparatus to perform a substrate processing method described below. For example, the controller 30 may control the fluid supply unit 530 and the fluid discharge unit 550 to perform the substrate processing method.

[0134] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid treatment chamber 400, and a drying chamber 500. The buffer unit 200 provides a space where substrates W loaded into and unloaded from the processing module 20 temporarily reside. The liquid treatment chamber 400 supplies liquid onto the substrates W to perform a liquid treatment process for treating the substrates W. The drying chamber 500 performs a drying process to remove liquid remaining on the substrates W. The transfer chamber 300 transfers the substrates W between the buffer unit 200, the liquid treatment chamber 400, and the drying chamber 500.

[0135] The longitudinal direction of the transfer chamber 300 may be arranged in the first direction X. The buffer unit 200 may be arranged between the index module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 may be arranged on one side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 may be arranged along the second direction Y. The drying chamber 500 and the transfer chamber 300 may be arranged along the second direction Y. The buffer unit 200 may be located at an end of the transfer chamber 300.

[0136] According to one embodiment, the liquid treatment chambers 400 may be disposed on both sides of the transfer chamber 300, and the drying chambers 500 may be disposed on both sides of the transfer chamber 300, and the liquid treatment chambers 400 may be disposed closer to the buffer unit 200 than the drying chambers 500. In some embodiments, the liquid treatment chambers 400 may be disposed in an array of AXB (A and B are natural numbers greater than 1 or 1) along the first direction X and the third direction Z on one side and / or both sides of the transfer chamber 300. In some embodiments, the drying chambers 500 may be disposed in an array of CXD (C and D are natural numbers greater than 1 or 1) along the first direction X and the third direction Z on one side and / or both sides of the transfer chamber 300. In some embodiments, only the liquid treatment chambers 400 may be disposed on one side of the transfer chamber 300, and only the drying chambers 500 may be disposed on the other side of the transfer chamber 300.

[0137] The transfer chamber 300 includes a transfer robot 320. In the transfer chamber 300, a guide rail 324 may be provided whose longitudinal direction is arranged in the first direction X, and the transfer robot 320 may be provided so as to be movable on the guide rail 324. The transfer robot 320 may include a hand 322 on which the substrate W is placed, and the hand 322 may be provided so as to be movable forward and backward, rotatable about a third direction Z as an axis, and movable along the third direction Z. A plurality of hands 322 are provided so as to be spaced apart in the up / down direction, and the hands 322 may be movable forward and backward independently of each other.

[0138] The buffer unit 200 includes a plurality of buffers 220 on which substrates W are placed. The buffers 220 may be arranged to be spaced apart from each other in the third direction Z. The front and back surfaces of the buffer unit 200 are open. The front surface faces the index module 10, and the back surface faces the transfer chamber 300. The index robot 120 can access the buffer unit 200 through the front surface, and the transfer robot 320 can access the buffer unit 200 through the back surface.

[0139] Figure 4 is a schematic illustration Figure 1 FIG. 1 is a diagram of an embodiment of a liquid processing chamber. Figure 4 , the liquid processing chamber 400 includes a housing 410 , a cup 420 , a support unit 440 , a liquid supply unit 460 , and an ascending / descending unit 480 .

[0140] The housing 410 may have an internal space for processing substrates W. The housing 410 may have a substantially hexahedral shape. For example, the housing 410 may have a rectangular parallelepiped shape. Furthermore, an opening (not shown) may be formed in the housing 410 through which the substrates W are inserted and removed. Furthermore, a door (not shown) for selectively opening and closing the opening may be installed in the housing 410.

[0141] The cup 420 may have a container shape with an open top. The cup 420 may have a processing space, and liquid processing may be performed on the substrate W in the processing space. The support unit 440 supports the substrate W in the processing space. The liquid supply unit 460 supplies processing liquid onto the substrate W supported by the support unit 440. The processing liquid may be provided in various types and may be sequentially supplied to the substrate W. The raising / lowering unit 480 adjusts the relative height between the cup 420 and the support unit 440.

[0142] In one embodiment, the cup 420 has a plurality of recovery containers (422, 424, and 426). Each of the recovery containers (422, 424, and 426) has a recovery space for recovering liquid used for substrate processing. Each of the recovery containers (422, 424, and 426) is arranged in a ring around the support unit 440. During the liquid treatment process, the treatment liquid spread by the rotation of the substrate W is introduced into the recovery space through the inlet (422a, 424a, and 426a) of each corresponding recovery container (422, 424, and 426). According to one embodiment, the cup 420 has a first recovery container 422, a second recovery container 424, and a third recovery container 426. The first recovery container 422 is arranged around the support unit 440, the second recovery container 424 is arranged around the first recovery container 422, and the third recovery container 426 is arranged around the second recovery container 424. The second inlet 424a introducing liquid into the second recovery container 424 may be located above the first inlet 422a introducing liquid into the first recovery container 422, and the third inlet 426a introducing liquid into the third recovery container 426 may be located above the second inlet 424a.

[0143] The support unit 440 has a support plate 442 and a drive shaft 444. The top surface of the support plate 442 is configured to be approximately circular and may have a diameter greater than the diameter of the substrate W. Support pins 442a are provided at the center portion of the support plate 442 to support the bottom surface of the substrate W. The support pins 442a are provided to protrude from the support plate 442 so that the substrate W is separated from the support plate 442 by a predetermined distance. Chuck pins 442b are provided at the edge of the support plate 442. The chuck pins 442b are provided to protrude upward from the support plate 442 and support one side of the substrate W so that the substrate W is stably held by the support unit 440 when the substrate W rotates. The drive shaft 444 driven by the driver 446 is connected to the center of the bottom surface of the substrate W and rotates the support plate 442 based on its central axis.

[0144] According to one embodiment, the liquid supply unit 460 may include a nozzle 462. The nozzle 462 may supply a treatment liquid to the substrate W. The treatment liquid may be a chemical, a rinse liquid, or an organic solvent. The chemical may be a chemical having strong acidic or strong alkaline properties. In addition, the rinse liquid may be deionized water. In addition, the organic solvent may be isopropyl alcohol (IPA). In addition, the treatment liquid supplied by the liquid supply unit 460 may be a solvent. For example, the treatment liquid supplied by the liquid supply unit 460 may be a developer. For example, the developer supplied by the liquid supply unit 460 may include n-butyl acetate.

[0145] Furthermore, the liquid supply unit 460 may include multiple nozzles 462, each of which may supply a different type of processing liquid. For example, one of the nozzles 462 may supply a chemical, another of the nozzles 462 may supply a rinsing liquid, and yet another of the nozzles 462 may supply an organic solvent. Furthermore, the controller 30 may control the liquid supply unit 460 to supply an organic solvent to the substrate W from yet another of the nozzles 462 after supplying the rinsing liquid to the substrate W from yet another of the nozzles 462. Thus, the rinsing liquid supplied to the substrate W may be replaced with an organic solvent having a lower surface tension. Furthermore, the developer may be supplied from any of the nozzles 462.

[0146] The lifting / lowering unit 480 moves the cup 420 in the up / down direction. The relative height between the cup 420 and the substrate W changes as the cup 420 moves vertically up / down. Therefore, the recovery containers (422, 424, 426) for recovering the treated liquid change according to the type of liquid supplied to the substrate W, allowing the liquid to be recovered separately. Unlike the above, the cup 420 is fixedly installed, and the lifting / lowering unit 480 can move the support unit 440 in the up / down direction.

[0147] Figure 5 is a schematic illustration Figure 3 A view of an embodiment of a drying chamber. Figure 5 According to an embodiment of the present inventive concept, the drying chamber 500 can remove the processing liquid remaining on the substrate W by using the processing fluid F in a supercritical state. The processing liquid to be removed can be any of the above-mentioned chemicals, a rinse liquid, an organic solvent, or a developer. In addition, the processing fluid F can include carbon dioxide (CO2). For example, the drying chamber 500 can remove the n-butyl acetate developer remaining on the substrate W using the carbon dioxide (CO2) in a supercritical state.

[0148] The drying chamber 500 may include a body 510 , a heating member 520 , a fluid supply unit 530 , a supporting member 540 , a fluid discharge unit 550 , and an ascending / descending member 560 .

[0149] The main body 510 may have an inner space 511 for processing the substrate W. The main body 510 may provide the inner space 511 for processing the substrate W. The main body 510 may provide the inner space 511 in which the substrate W is dried by the processing fluid F in a supercritical state. The main body 510 may also be referred to as a chamber.

[0150] The main body 510 may include a top body 512 and a bottom body 514. The top body 512 and the bottom body 514 may be coupled to each other to form an internal space 511. Either the top body 512 or the bottom body 514 may be coupled to a lifting / lowering member 560 to move in an up / down direction. For example, the bottom body 514 may be coupled to the lifting / lowering member 560 to move in an up / down direction via the lifting / lowering member 560. Thus, the internal space 511 of the main body 510 may be selectively sealed. In the above example, the bottom body 514 is coupled to the lifting / lowering member 560 to move in an up / down direction, but the present invention is not limited thereto. For example, the top body 512 may be coupled to the lifting / lowering member 560 to move in an up / down direction.

[0151] The heating member 520 may heat the treatment fluid F supplied to the inner space 511. The heating member 520 may increase the temperature of the inner space 511 of the body 510. As the heating member 520 increases the temperature of the inner space 511, the treatment fluid F supplied to the inner space 511 may become or remain in a supercritical state.

[0152] Furthermore, the heating member 520 may be embedded in the main body 510. For example, the heating member 520 may be embedded in either the top main body 512 or the bottom main body 514. For example, the heating member 520 may be disposed in the bottom main body 514. However, the present invention is not limited thereto, and the heating member 520 may be disposed at various locations capable of increasing the temperature of the interior space 511. Furthermore, the heating member 520 may be a heater. However, the present invention is not limited thereto, and the heating member 520 may be variously modified to known devices capable of increasing the temperature of the interior space 511.

[0153] The fluid supply unit 530 can supply the treatment fluid F to the inner space 511 of the main body 510. The treatment fluid F supplied by the fluid supply unit 530 may include carbon dioxide (CO2). The fluid supply unit 530 may include a fluid supply source 531, a first supply line 533, a first supply valve 535, a second supply line 537, and a second supply valve 539.

[0154] The fluid supply source 531 can store the treatment fluid F to be supplied to the interior space 511 of the main body 510 or supply the treatment fluid F to the interior space 511. The fluid supply source 531 can supply the treatment fluid F to the interior space 511 via the first supply line 533 and / or the second supply line 537. Furthermore, a first supply valve 535 can be installed on the first supply line 533. Furthermore, a second supply valve 539 can be installed on the second supply line 537. The first supply valve 535 and the second supply valve 539 can be on / off valves, such as open / close valves. The first supply valve 535 and the second supply valve 539 can be flow control valves. As the first supply valve 535 and the second supply valve 539 open and close, the treatment fluid F can selectively flow through the first supply line 533 or the second supply line 537.

[0155] One end of the first supply line 533 may be in communication with the internal space 511. The first supply line 533 may be a top supply line that supplies a processing fluid F, which is a drying gas, to the internal space 511 of the main body 510 from the top surface. At least a portion of the first supply line 533 may be provided to the top main body 512. In addition, the first supply line 533 may be configured so that the supply of the processing fluid F is guided to the top surface of the substrate W supported by the support member 540. For example, the processing fluid F supplied from the first supply line 533 may be supplied to the top surface of the substrate W. The processing fluid F supplied from the first supply line 533 may flow in a downward direction. For example, the processing fluid F supplied from the first supply line 533 may flow from above the substrate W supported in the internal space 511 to below the substrate W.

[0156] One end of the second supply line 537 may be in communication with the internal space 511. The second supply line 537 may be a bottom supply line that supplies a process fluid F, serving as a drying gas, from the bottom surface to the internal space 511 of the main body 510. At least a portion of the second supply line 537 may be provided to the bottom body 514. Furthermore, the second supply line 537 may be configured such that the supply of the process fluid F is directed to the bottom surface of the substrate W supported by the support member 540. For example, the process fluid F supplied from the second supply line 537 may flow in an upward direction. For example, the process fluid F supplied from the second supply line 537 may flow from below the substrate W supported in the internal space 511 to above the substrate W.

[0157] In the above example, the first supply line 533 and the second supply line 537 are connected to one fluid supply source 531, but the present invention is not limited thereto. For example, a plurality of fluid supply sources 531 may be provided, the first supply line 533 may be connected to any one of the plurality of fluid supply sources 531, and the second supply line 537 may be connected to another one of the fluid supply sources 531.

[0158] In addition, devices such as pressure sensors, temperature sensors, flow control valves, orifices or heaters may be variously installed and arranged at the first supply line 533, the second supply line 533, or between the point where the first supply line 533 and the second supply line 537 are connected and the fluid supply source 531.

[0159] The support member 540 may support the substrate W in the inner space 511. The support member 540 may be configured to support an edge region of the substrate W in the inner space 511. For example, the support member 540 may be configured to support a lower surface of an edge region of the substrate W in the inner space 511.

[0160] The fluid discharge unit 550 can discharge the treatment fluid F from the interior space 511 of the main body 510 to the outside. The fluid discharge unit 550 may include a fluid discharge line 551 and a discharge valve 553. One end of the fluid discharge line 551 may be in communication with the interior space 511. At least a portion of the fluid discharge line 551 may be provided to the bottom body 514. The fluid discharge line 551 may be configured such that when the treatment fluid F is discharged from the interior space 511, the treatment fluid F flows in a direction from the top to the bottom of the interior space 511.

[0161] In addition, a discharge valve 553 may be installed on the fluid discharge line 551. The discharge valve 553 may be an on / off valve, for example, an open / close valve. The discharge valve 553 may be a flow control valve. Devices such as an orifice, a pressure sensor, a temperature sensor, and a pump may be variously installed and arranged on the fluid discharge line 551.

[0162] Hereinafter, a method for processing a substrate according to an embodiment of the present inventive concept will be described. The substrate processing method described below can be performed by a substrate processing apparatus. As described above, the controller 30 can control the substrate processing apparatus so that the substrate processing apparatus can perform the substrate processing method described below.

[0163] Figure 6 1 is a flow chart illustrating a substrate processing method according to an embodiment of the present inventive concept. Figure 6 , a substrate processing method according to an embodiment of the inventive concept may include a liquid processing step S10 , a transferring step S20 , and a drying step S30 .

[0164] The liquid treatment step S10 is a step of performing liquid treatment on the substrate W by supplying a treatment liquid to the substrate W. The liquid treatment step S10 may be performed in the liquid treatment chamber 400. For example, in the liquid treatment step S10, the treatment liquid L may be supplied to the rotating substrate W (see FIG. Figure 7) to perform liquid treatment on the substrate W. The treatment liquid L supplied in the liquid treatment step S10 may be at least one of the aforementioned chemicals, a rinse liquid, an organic solvent, and a developer. For example, in the liquid treatment step S10, the substrate W may be rinsed by supplying a rinse liquid to the rotating substrate W. Thereafter, an organic solvent may be supplied to the rotating substrate W to replace the rinse liquid remaining on the substrate W. Furthermore, for example, in the liquid treatment step S10, the substrate W may be developed by supplying a developer to the rotating substrate W.

[0165] The transfer step S20 is a step of transferring the substrate W. The transfer step S20 may be a step of transferring the substrate W, which has been subjected to liquid treatment in the liquid treatment chamber 400, to the drying chamber 500. For example, in the transfer step S20, the transfer robot 320 may transfer the substrate W from the liquid treatment chamber 400 to the interior space 511 of the drying chamber 500. In the transfer step S20, the treatment liquid L may remain on the substrate W to be transferred. For example, an organic solvent may remain on the substrate W. For example, a developer may remain on the substrate W. That is, the substrate W can be transferred to the drying chamber 500 while its top surface is wetted with the developer or organic solvent, thereby minimizing tilting of the pattern formed on the substrate W.

[0166] The drying step S30 is a step of drying the substrate W using the processing fluid F in a supercritical state after the substrate W is introduced into the internal space 511. The drying step S30 can be performed in the drying chamber 500. In the drying step S30, the substrate W can be dried by supplying the processing fluid F in the internal space 511 of the main body 510 to the substrate W. For example, in the drying step S30, the processing fluid F can be supplied to the internal space 511. In the drying step S30, the processing liquid in a supercritical state can be transferred to the substrate. The processing fluid F in a supercritical state transferred to the substrate W mixes with the processing liquid L remaining on the top surface of the substrate W. Then, as the processing fluid F mixed with the processing liquid L is discharged from the internal space 511, the processing liquid L can be removed from the substrate W.

[0167] Hereinafter, the drying step S30 according to an embodiment of the present inventive concept will be described in more detail. Figure 8 yes Figure 6 A detailed flow chart of the drying steps, and Figure 9 is a graph showing an example of pressure change in the internal space of the body during the drying step of the present inventive concept. Figure 8 and Figure 9 According to an embodiment of the present inventive concept, the drying step S30 may include a pressurizing step S31, a flowing step S32, and a decompressing step S33. The pressurizing step S31, the flowing step S32, and the decompressing step S33 may be performed sequentially.

[0168] The pressurizing step S31 may be a step of increasing the pressure of the interior space 511 to a predetermined pressure, such as a first pressure P1. The pressurizing step S31 may be performed after the substrate W is introduced into the interior space 511. In the pressurizing step S31, a processing fluid F may be supplied to the interior space 511 to increase the first pressure P1 of the interior space 511.

[0169] The pressurizing step S31 may include a bottom (back) surface supplying process S31 - 1 , a draining process S31 - 2 , and a top (front) surface supplying process S31 - 3 .

[0170] The bottom surface supply process S31-1 may be a process of increasing the pressure of the internal space 511 by supplying the processing fluid F toward the back surface of the substrate W. In the bottom surface supply process S31-1, the second supply line 537 may supply the processing fluid F to the back surface of the substrate W (see FIG. Figure 10 During the bottom surface supply process S31-1, the first supply valve 535 may be closed, the second supply valve 539 may be opened, and the exhaust valve 553 may be closed. Furthermore, during the bottom surface supply process (S31-1), since the second supply line 537, which serves as a bottom supply line, supplies the process fluid F in a direction from the bottom to the top of the internal space 511, a flow may occur in the internal space 511. Due to this upward flow, the liquid film formed on the top surface of the substrate W by the process liquid L may have an upwardly curved shape.

[0171] The discharge process S31-2 may be performed after the bottom surface supply process S31-1. In the discharge process S31-2, the fluid discharge line 551 may discharge the process fluid F from the inner space 511 (see FIG. Figure 11 During the discharge process S31-2, the first supply valve 535 may be closed, the second supply valve 539 may be closed, and the discharge valve 553 may be opened. That is, the discharge process S31-2 may be a process for reducing the pressure of the internal space 511. Furthermore, during the discharge process S31-2, since the fluid discharge line 551 discharges the processing fluid F from the top to the bottom of the internal space 511, a downward flow may be generated in the internal space 511. Due to this downward flow, the liquid film formed by the processing liquid L on the top surface of the substrate W may be pressed downward. In other words, the liquid film formed on the substrate W may become flat.

[0172] The top surface supply process S31-3 may be a process for increasing the pressure of the internal space 511 by supplying the processing fluid F to the top surface of the substrate W. In the top surface supply process S31-3, the processing fluid F may be supplied to the top surface of the substrate W. In the top surface supply process S31-3, the processing fluid F supplied to the top surface of the substrate W from the top of the internal space 511 above the substrate W through the first supply line 533 may flow to the bottom of the internal space 511 below the substrate W (see FIG. 2 ). Figure 12 During the top surface supply process S31-3, the first supply valve 535 may be opened, the second supply valve 539 may be closed, and the exhaust valve 553 may be closed. Furthermore, during the top surface supply process S31-3, since the first supply line 533, serving as a top supply line, supplies the processing fluid F from the top to the bottom of the internal space 511, a downward flow may occur in the internal space 511. Due to the downward flow, the liquid film formed by the processing liquid L on the top surface of the substrate W may be pressed downward. In other words, the liquid film formed on the substrate W may become flat.

[0173] In the pressurizing step S31 according to an embodiment of the present inventive concept, after performing the bottom surface supply process S31-1, the top surface supply process S31-3 and the exhaust process S31-2 may each be repeated at least once. That is, the pressurizing step S31 according to an embodiment of the present inventive concept may include a pressure pulsation period t1 to t6, in which the pressure fluctuates due to the partial pressure difference. If the pressure of the internal space 511 is increased to the target first pressure P1 only through the bottom surface supply process S31-1, the processing liquid L remaining on the substrate W may be formed into an upwardly curved shape due to upward flow, and drying marks or multiple defects may appear in the edge region of the substrate W.

[0174] However, according to an embodiment of the present inventive concept, the top surface supply process S31-3 and the discharge process S31-2 described above can be performed before the pressure of the internal space 511 reaches the first pressure P1, which is a preset pressure (before entering the flowing step S32). That is, in an embodiment of the present inventive concept, the top surface supply process S31-3 and the discharge process S31-2, which form a downward flow in the pressurizing step S31, are each repeated at least once, thereby evenly dispersing the processing liquid L remaining on the substrate W during the pressurizing step S31. In other words, the thickness of the liquid film can be stabilized. In other words, the thickness of the liquid film can be uniform and / or the top surface of the liquid film can be relatively flat. Therefore, uneven evaporation of the processing liquid L can be minimized. Therefore, the risk of the aforementioned dry marks or multiple defects occurring during the pressurizing step S31 can be minimized. Furthermore, the discharge process S31-2 and the top surface supply process S31-3 can also be performed continuously. In this case, the downward flow in the internal space 511 is more strongly generated, and thus the dispersion of the processing liquid L remaining on the substrate W can occur more effectively. Furthermore, since the liquid film of the processing liquid L repeatedly flows in the pressure pulse sections t1 to t6 , there is an advantage in that the hardening of the liquid film of the processing liquid L is minimized.

[0175] Furthermore, the lower limit of the pressure range of the internal space 511 during the pressure pulsation intervals t1 to t6 of the present invention may be greater than or equal to the critical pressure CP (e.g., approximately 73.8 bar). More specifically, it may be greater than the critical pressure CP at which the process fluid F transitions to a supercritical state. In other words, the lower limit of the pressure range of the internal space 511 altered by the top surface supply process S31-3 and the discharge process S31-2 may be greater than the critical pressure CP. Furthermore, the upper limit of the pressure range of the internal space 511 altered by the top surface supply process S31-3 and the discharge process S31-2 may be between approximately 73.8 bar and approximately 93.8 bar.

[0176] That is, the pressure pulsation intervals t1 to t6 of the present invention are performed when the processing liquid L and the supercritical processing fluid F are mixed (i.e., when the surface tension of the processing liquid L is low), so that the distance between the surface of the substrate W and the processing liquid L can be minimized during adhesion. Therefore, defects caused by particles and byproducts on the substrate W can be minimized.

[0177] The flow step S32 may be performed after the pressurizing step S31. In the flow step S32, the treatment fluid F may be supplied to the internal space 511, or the treatment fluid F may be discharged from the internal space 511. For example, when the treatment fluid F is supplied to the internal space 511 in the flow step S32, the treatment fluid F may not be discharged from the internal space 511. In addition, when the treatment fluid F is discharged from the internal space 511 in the flow step S32, the treatment fluid F may not be supplied to the internal space 511. That is, in the flow step S32, the pressure of the internal space 511 may be changed by the partial pressure difference. In the flow step S32, the pressure of the internal space 511 may be repeatedly pulsated between a first pressure P1 and a second pressure P2. The second pressure P2 may be a pressure lower than the first pressure P1. The first pressure P1 may be approximately 180 bar. The second pressure P2 may be approximately 80 bar.

[0178] In the flowing step S32 , a flow is generated in the processing fluid F supplied to the internal space 511 , and thus the processing liquid L remaining on the substrate W can be more efficiently removed from the substrate W. The flowing step S32 may be referred to as a processing step.

[0179] The decompression step S33 may be performed after the flow step S32. In the decompression step S33, the pressure of the internal space 511 of the body 510 may be reduced. For example, in the decompression step S33, the pressure of the internal space 511 of the body 510 may be reduced to atmospheric pressure.

[0180] In the above example, the lower limit of the pressure range of the internal space 511 in the pressure pulsation interval t1 to t6 is equal to or greater than the critical pressure CP, specifically, higher than the critical pressure CP, but not limited thereto. Figure 13As shown, the lower limit of the pressure range of the pulsation interval included in the pressurizing step S31 may also be lower than the critical pressure CP. That is, the critical pressure CP may be included in the pressure range of the internal space 511 that is changed by the top surface supply process S31-3 and the exhaust process S31-2. Alternatively, both the upper and lower limits of the pressure range of the pressure pulsation interval may be lower than the critical pressure CP. In other words, the pressure range of the pressure pulsation interval may vary depending on the type of processing liquid L supplied to the substrate W, the amount of processing liquid L remaining on the substrate W, and the shape of the pattern formed on the substrate W.

[0181] In the above example, the pressure increase and decrease amplitudes in the pressure pulsation intervals t1 to t6 are substantially the same, but the present invention is not limited thereto. Figure 14 As shown, the pressure reduction amount in the pressure pulsation interval may be smaller than the pressure increase amount in the pressure pulsation interval. In this case, it may be advantageous to reach the preset first pressure P1 in a faster time.

[0182] Effects of the present inventive concept are not limited to the above-mentioned effects, and those skilled in the art to which the present inventive concept relates can clearly understand unmentioned effects from the description and the accompanying drawings.

[0183] Although preferred embodiments of the present invention have been illustrated and described so far, the present invention is not limited to the above-mentioned specific embodiments, and it is noted that those skilled in the art involved in the present invention may implement the present invention in various ways without departing from the essence of the present invention claimed in the scope of the patent application, and these modifications should not be interpreted separately from the technical spirit or prospects of the present invention.

Claims

1. A method for processing a substrate, the method comprising the following steps: a pressurizing step for increasing the pressure of the inner space of the chamber by supplying a processing fluid into the inner space after the substrate is placed in the inner space; a flowing step for generating a flow of the treatment fluid by a combination of supplying the treatment fluid to the inner space and discharging the treatment fluid from the inner space; and a decompression step of reducing the pressure of the internal space by discharging the treatment fluid from the internal space, in, The pressurizing step comprises the following steps: a bottom surface supply process of increasing the pressure of the internal space by supplying the processing fluid to a back surface of the substrate placed in the internal space; and a top surface supply process of increasing the pressure of the internal space by supplying the processing fluid to the top surface of the substrate placed in the internal space; wherein the pressurizing step further includes a discharge process for discharging the treatment fluid supplied to the inner space after the top surface supply process; and wherein the top surface supply process and the discharge process are performed continuously; and The pressurizing step increases the pressure of the internal space to a preset pressure, and the top surface supplying process and the exhausting process are performed before the pressure of the internal space reaches the preset pressure.

2. The method for processing a substrate according to claim 1, wherein: The top surface supply process is performed after the bottom surface supply process.

3. The method for processing a substrate according to claim 1, wherein: The discharge process discharges the treatment fluid supplied to the inner space in a downward direction.

4. The method for processing a substrate according to any one of claims 1 to 3, wherein: The top surface supply process supplies the processing fluid toward a top surface of the substrate.

5. The method for processing a substrate according to claim 3, wherein: A lower limit of a pressure range of the internal space changed by the top surface supply process and the exhaust process is higher than a critical pressure of the process fluid.

6. The method for processing a substrate according to claim 3, wherein: The pressure range of the internal space changed by the top surface supply process and the exhaust process includes a critical pressure of the process fluid.

7. A method for processing a substrate, the method comprising drying the substrate using a processing fluid in a supercritical state, the method comprising the steps of: a transferring step of placing the substrate, the top surface of which is wetted by a processing fluid, into the inner space of a chamber; a pressurizing step of increasing the pressure of the internal space to a preset pressure by supplying the treatment fluid to the internal space after the transferring step; and a processing step of supplying the processing fluid to the inner space and / or discharging the processing fluid from the inner space to remove the processing fluid from the substrate, The pressurizing step includes the following steps: a top surface supply process of increasing the pressure of the internal space by supplying the processing fluid toward the top surface of the substrate placed in the internal space; and a discharge process for discharging the treatment fluid supplied to the inner space; wherein the top surface supply process and the discharge process are performed continuously; and Wherein, the top surface supply process and the exhaust process are performed before the pressure of the internal space reaches the preset pressure.

8. The method for processing a substrate according to claim 7, wherein: The pressurizing step further includes a bottom surface supply process, which increases the pressure of the internal space by supplying the processing fluid toward the back side of the substrate placed in the internal space, and wherein the top surface supply process is performed later than the bottom surface supply process.

9. The method for processing a substrate according to claim 7, wherein: The treatment fluid supplied at the top surface supply process is supplied to the top surface of the substrate in a downward direction.

10. The method for processing a substrate according to any one of claims 7 to 9, wherein: The treatment fluid includes carbon dioxide.

11. The method for processing a substrate according to any one of claims 7 to 9, wherein: The processing fluid is a developer.

12. The method for processing a substrate according to claim 11, wherein: The developer includes n-butyl acetate.

13. A substrate processing device, comprising: a main body having an interior space; a supporting member, the supporting member being used to support the substrate in the internal space; a fluid supply unit configured to supply a processing fluid for drying the substrate into the inner space; a fluid discharge unit configured to discharge the treatment fluid from the inner space; and a controller for controlling the fluid supply unit and the fluid discharge unit, Wherein, the fluid supply unit comprises: a top supply line for supplying the processing fluid toward a top surface of the substrate supported by the support member; and a bottom supply line for supplying the processing fluid toward a back side of the substrate supported by the support member; and wherein after the substrate is placed into the internal space, during a pressurizing step of increasing the pressure of the internal space to a preset pressure, the controller controls the fluid supply unit and the fluid discharge unit so that at least one of the supply of the processing fluid by the top supply line and the discharge of the processing fluid by the fluid discharge unit is performed; wherein the pressurizing step includes a bottom surface supply process, a discharge process, and a top surface supply process; wherein the bottom surface supply process increases the pressure of the internal space by supplying the treatment fluid to the back surface of the substrate placed in the internal space, the top surface supply process increases the pressure of the internal space by supplying the treatment fluid to the top surface of the substrate placed in the internal space, and the discharge process discharges the treatment fluid supplied to the internal space after the top surface supply process; wherein the top surface supply process and the discharge process are performed continuously; and Wherein, the top surface supply process and the exhaust process are performed before the pressure of the internal space reaches the preset pressure.

14. The substrate processing apparatus according to claim 13, wherein: The controller controls the fluid supply unit such that the supply of the treatment fluid to the bottom supply line is performed during the pressurizing step and the supply timing of the treatment fluid to the top supply line is later than that of the bottom supply line.

15. The substrate processing apparatus according to claim 13 or 14, wherein: The top supply line is configured to supply the processing fluid toward a top surface of the substrate supported by the support member.

16. The substrate processing apparatus according to claim 13 or 14, wherein: The fluid discharge unit comprises: a fluid discharge line, the fluid discharge line being configured to communicate with the internal space; and a discharge valve installed at the fluid discharge line, The fluid discharge line is configured such that when the treatment fluid is discharged, the treatment fluid flows from the top to the bottom of the inner space.

17. The substrate processing apparatus according to claim 13 or 14, further comprising a heating member configured to increase the temperature of the internal space so as to convert the processing fluid supplied to the internal space into a supercritical state or to maintain the supercritical state. in, The treatment fluid supplied by the fluid supply unit contains carbon dioxide.

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