A method of producing a tuning fork resonator

Abstract

The application discloses a tuning fork resonator production method, and a production line of the tuning fork resonator comprises the following work stations arranged in sequence along a production direction: a production work station for processing wafer raw materials into wafer pieces; a first measuring work station; a folding work station for folding tuning fork wafers on the wafer pieces; an assembling work station for fixing the tuning fork wafers to product bases; a second measuring work station; and a packaging work station for vacuum packaging the products. The first measuring work station can quickly consume vibration energy of the tuning fork wafers, so that the vibration of the tuning fork wafers in the area is ended, the probe can directly measure the next tuning fork wafer, and the measuring efficiency is greatly improved. The second measuring work station can simulate a vacuum environment after packaging to measure the frequency and resistance of the product, so that defective products are selected, and the defective product rate is reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, specifically a method for manufacturing a tuning fork resonator. Background Technology

[0002] In the 21st century, with technological advancements and changes in market applications, quartz crystal resonators have shown a trend towards miniaturization, high precision, and low power consumption. Secondly, quartz crystal resonators are developing towards higher precision and stability. The increasing miniaturization, thinning, and surface-mount design of quartz crystal resonators presents greater challenges to improving their precision and stability. From a market application perspective, quartz crystal resonators provide stable clock frequencies for electronic products, and their precision and stability have a crucial impact on the quality, performance, and subsequent maintenance costs of downstream products. Miniaturized, ultra-high frequency quartz crystal resonators are the technological development trend for future 5G applications.

[0003] Tuning fork-shaped quartz resonators are one type of quartz resonator used in crystal resonators and have broad market prospects. Before leaving the factory, tuning fork resonators need to undergo multiple measurements to ensure product performance. Currently, there are several difficulties in producing tuning fork resonators. First, after the crystal is processed into a wafer, the frequency of the tuning fork crystal on the entire wafer needs to be measured. Currently, frequency measurement is performed using a probe. After the probe applies vibration to the tuning fork crystal, it generates vibration waves that affect the oscillation of adjacent products. Measurement must be performed after the adjacent products have finished oscillating, resulting in extremely low measurement efficiency. At the same time, due to the extremely thin wafer, it is not easy to fix it during measurement. Second, because the product packaging is carried out in a vacuum, it is easier for the tuning fork crystal to oscillate after packaging. However, before packaging, it is in an atmospheric environment, making it difficult to accurately measure the product frequency and resistance. Direct packaging and sales result in a high defect rate, so these issues urgently need to be addressed. Summary of the Invention

[0004] To avoid and overcome the technical problems existing in the prior art, the present invention provides a method for producing tuning fork resonators, which greatly improves the measurement efficiency of tuning fork wafers during the production process and can accurately simulate and measure the frequency and resistance of the product before packaging.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] A method for manufacturing a tuning fork resonator includes the following steps:

[0007] S1. Complete the layout of the production line, which includes the following workstations arranged sequentially along the production direction:

[0008] The production station processes raw wafer materials into wafers;

[0009] The first measurement station includes a positioning platform with a negative pressure pipeline connected to a negative pressure source; a wafer fixed on the positioning platform; a measurement system positioned above the wafer, with probes connected to a frequency meter, the probes sequentially applying vibration to the root of each tuning fork crystal on the wafer; and a negative pressure hole on the positioning platform connected to the negative pressure pipeline, the negative pressure hole corresponding to the position of the tuning fork crystal; the negative pressure hole closes when the probe applies vibration and opens after the probe leaves the tuning fork crystal.

[0010] The folding station folds and removes the tuning fork chip from the wafer.

[0011] At the assembly station, the tuning fork wafers are solidified onto the product base;

[0012] The second measurement station includes a test bench and a vacuum chamber fixed on the test bench. The vacuum chamber and the test bench enclose a test cavity. The unpackaged product to be tested is connected to an analyzer located in the test cavity. The vacuum pump is connected to the test cavity through a vacuum port on the test bench. The test bench is also provided with a displacement port connected to the test cavity, and the displacement port is connected to an inactive gas source.

[0013] The packaging station vacuum seals the product;

[0014] After the production line is set up, the photolithography wafer material is first placed in the photolithography workshop of the production station. The wafer is then subjected to exposure, development, wet etching and sputtering coating processes in sequence to obtain a wafer.

[0015] S2. Send the wafer to the positioning platform of the first measurement station;

[0016] S21. Make the wafer sheet abut against each positioning protrusion, start the negative pressure source to ensure that the wafer sheet is fixed by negative pressure through the suction holes, and at this time the solenoid valve is closed.

[0017] S22. Adjust the positions of the X-axis slide, Y-axis slide, and Z-axis slide so that the probe contacts the root of the first set of tuning fork crystals, and the CCD recognition system identifies and observes the tuning fork crystals.

[0018] S23. The probe applies vibration to the root of the tuning fork crystal, and the frequency meter measures the vibration frequency of the tuning fork crystal. After the measurement is completed, the probe is moved to the root of the next tuning fork crystal by the relative movement of the X-axis slide, Y-axis slide and Z-axis slide.

[0019] In steps S24 and S23, the solenoid valve opens when the probe moves, applies instantaneous negative pressure to the area where the measured tuning fork crystal is located through the negative pressure hole, and closes the solenoid valve before the probe reaches the root of the next tuning fork crystal.

[0020] S25. After the probe reaches the root of the next tuning fork wafer, repeat steps S23 and S24 until all tuning fork wafers are measured. Then turn off the negative pressure source and take out the wafer and send it to the folding station.

[0021] S3. Remove the tuning fork chip from the wafer and send it to the assembly station;

[0022] S4. Assemble the tuning fork wafer onto the product base and cure the assembly points at high temperature. Fine-tune the thickness of the tuning fork wafer by ion beam etching.

[0023] S5. Send the unpackaged tuning fork resonator product to the test bench;

[0024] S51. Raise the vacuum chamber, connect the tuning fork resonator product to the analyzer, and then lower the vacuum chamber.

[0025] S52. After opening the replacement port to displace the air inside the vacuum chamber, close the replacement port. The vacuum pump will then evacuate the vacuum chamber to the specified vacuum level.

[0026] S53. After reaching the specified vacuum level, start the analyzer to analyze the product;

[0027] S54. After the analysis is completed, open the replacement port and fill the vacuum chamber with inactive gas to break the vacuum environment, raise the vacuum chamber and take out the product.

[0028] S6. Vacuum encapsulate the tuning fork resonator product to complete the entire production process.

[0029] As a further aspect of the present invention: the positioning platform is provided with an adsorption hole that fits against the surface of the wafer sheet, and the negative pressure pipeline is divided to form a first negative pressure channel communicating with the adsorption hole and a second negative pressure channel communicating with the negative pressure hole. A solenoid valve is provided on the second negative pressure channel to control the opening and closing of the negative pressure hole.

[0030] As a further embodiment of the present invention: the surface of the positioning platform is provided with positioning protrusions that abut against the wafer sheet and are distributed in an L-shape, and the positioning protrusions cooperate with each other to form a positioning end for right-angle positioning of the wafer sheet.

[0031] As a further embodiment of the present invention: the measurement system has an observation port located above the probe, and the CCD recognition system is fixed on the measurement system with the detection port of the CCD recognition system facing the probe.

[0032] As a further embodiment of the present invention: the positioning platform and the measuring system are both mounted on a fixed base, the fixed base being provided with an X-axis slide and a Y-axis slide arranged perpendicularly to each other, the positioning platform being fixed on the mounting base of the X-axis slide; a Z-axis slide that moves in the vertical direction is also fixed on the Y-axis slide, and the measuring system is clamped and fixed by a fixed arm on the Z-axis slide.

[0033] As a further embodiment of the present invention: the vacuum chamber is fixed to the telescopic rod of the test bench so as to produce a lifting action, and a silicone ring is provided at the opening of the vacuum chamber.

[0034] As a further embodiment of the present invention: the vacuum port is connected to a vacuum pump via a vacuum pipe, and a vacuum resistance gauge is also connected to the vacuum pipe.

[0035] As a further aspect of the present invention: the inactive gas source is nitrogen or an inert gas, and a control panel is provided on the test bench to control the opening and closing of the vacuum port and the replacement port.

[0036] Compared with the prior art, the beneficial effects of the present invention are:

[0037] 1. This invention involves sequentially exposing, developing, wet etching, and sputtering coating processes on wafer raw materials in a photolithography workshop to obtain a wafer. When measuring the vibration frequency of a tuning fork wafer in the first measurement process, a probe sequentially applies vibration to the tuning fork wafer on the wafer, and the vibration frequency is recorded by a frequency meter, thus completing the measurement process. As the probe moves from the measured tuning fork wafer to the next wafer, a negative pressure orifice opens, generating a momentary negative pressure. Airflow is instantly drawn into the negative pressure orifice, and the rapidly flowing airflow forms gaseous damping, quickly consuming the vibration energy of the tuning fork wafer, thus ending the oscillation of the tuning fork wafer in that area. This allows the probe to directly perform measurements when it reaches the next tuning fork wafer, significantly improving the measurement efficiency. To improve measurement efficiency, the unencapsulated tuning fork resonator is immediately attached to the product base after measurement. The unencapsulated resonator is then placed on a test bench, enclosed in a vacuum chamber, and connected to the testing instrument. At the start of the test, the displacement port and vacuum pump are opened simultaneously to replace the air in the test chamber with an inactive gas. After displacement, the displacement port is closed, evacuating the test chamber to a predetermined vacuum level. This simulates the vacuum environment after encapsulation, allowing for the measurement of the product's frequency and resistance, thus identifying defective products and reducing the defect rate. After the test, the displacement port is reopened, and an inactive gas is injected into the test chamber to break the negative pressure environment, allowing the vacuum chamber to be opened normally. Finally, the product is vacuum-sealed after the test.

[0038] 2. This invention achieves negative pressure adsorption and fixation of the wafer sheet by opening adsorption holes on the surface of the positioning platform and connecting them to a negative pressure source. The negative pressure pipeline connected to the negative pressure source can be split and connected to the adsorption holes through a first negative pressure channel and a second negative pressure channel, respectively. The adsorption holes can maintain continuous adsorption and fixation of the wafer sheet, preventing rigid fixation from damaging the extremely thin wafer sheet. Since a solenoid valve is provided on the second negative pressure channel, the gas flow rate at the negative pressure hole can be controlled by controlling the opening of the solenoid valve. Therefore, with a single negative pressure source, the adsorption and fixation of the wafer sheet can be completed simultaneously, and the vibration problem caused during measurement can be solved.

[0039] 3. This invention uses L-shaped positioning protrusions on the positioning platform to allow the wafer to be positioned by contacting each protrusion, making operation convenient and preventing damage to the wafer during positioning. A CCD recognition system is installed above the measurement system to magnify and observe the detected tuning fork wafer, facilitating measurement, positioning, and defective product identification. The coordinated arrangement of the X-axis slide, Y-axis slide, and Z-axis slide facilitates precise adjustment of the measurement system and the wafer's position.

[0040] 4. The present invention features a telescopic rod on the test bench to move the vacuum chamber up and down, facilitating the control of the opening and closing of the vacuum chamber; a vacuum resistance gauge is connected to the vacuum pipeline to obtain vacuum information in real time; nitrogen or inert gas is selected as the non-reactive gas to replace the air in the original vacuum chamber, preventing residual air in the vacuum chamber from affecting the measurement and improving the accuracy of the measurement. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of the structure of the present invention.

[0042] Figure 2 This is a schematic diagram of the structure of the first measurement station.

[0043] Figure 3 This is a schematic diagram of the measurement system in this invention.

[0044] Figure 4 This is a schematic diagram of the positioning platform in this invention.

[0045] Figure 5 This is an enlarged view of the on-chip tuning fork chip in this invention.

[0046] Figure 6 This is a simplified diagram of the flow direction in a negative pressure pipeline.

[0047] Figure 7 This is a schematic diagram of the structure of the second measurement station.

[0048] Figure 8This is a structural schematic diagram from another perspective of the second measurement station.

[0049] In the picture:

[0050] A1, Production station; A2, First measurement station; A3, Folding station;

[0051] A4. Assembly station; A5. Second measurement station; A6. Packaging station;

[0052] 1. Positioning platform; 11. Negative pressure interface; 12. Positioning protrusion;

[0053] 13. Adsorption pore; 14. Negative pressure pore; 15. Negative pressure pipeline;

[0054] 151. First negative pressure channel; 152. Second negative pressure channel; 153. Solenoid valve;

[0055] 2. wafer chip; 21. Tuning fork chip;

[0056] 3. Measurement system; 31. Probe; 32. Observation port;

[0057] 4. CCD recognition system;

[0058] 5. Fixed base; 51. X-axis slide table;

[0059] 52. Z-axis slide; 521. Fixed arm;

[0060] 53. Y-axis slide; 531. Mounting base;

[0061] 6. Test stand; 61. Vacuum chamber; 611. Telescopic rod;

[0062] 62. Analyzer; 63. Vacuum port; 64. Replacement port;

[0063] 65. Control panel; 66. Vacuum pipe. Detailed Implementation

[0064] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0065] Please see Figures 1-8 In this embodiment of the invention, a method for producing a tuning fork resonator includes the following steps:

[0066] S1. Place the photolithography wafer material in the photolithography workshop of production station A1, and perform exposure, development, wet etching and sputtering coating processes on the wafer in sequence to obtain wafer 2.

[0067] S2. Send the wafer 2 to the positioning platform 1 of the first measurement station A2;

[0068] S21. Make the wafer 2 abut against each positioning protrusion 12, and start the negative pressure source to ensure that the wafer 2 is fixed by negative pressure through the suction hole 13. At this time, the solenoid valve 153 is closed.

[0069] S22. Adjust the positions of X-axis slide 51, Y-axis slide 53, and Z-axis slide 52 so that probe 31 abuts against the root of the first set of tuning fork crystals 21, and CCD recognition system 4 performs recognition and observation of the tuning fork crystals 21.

[0070] If defective products are found during inspection, they will be marked and removed.

[0071] S23, the probe 31 applies vibration to the root of the tuning fork crystal 21, and the frequency meter measures the vibration frequency of the tuning fork crystal 21. After the measurement is completed, the probe 31 is moved to the root of the next tuning fork crystal 21 by the relative movement of the X-axis slide 51, Y-axis slide 53, and Z-axis slide 52.

[0072] In steps S24 and S23, when the probe 31 moves, the solenoid valve 153 opens, applies negative pressure to the area where the measured tuning fork crystal 21 is located through the negative pressure hole 14, and closes the solenoid valve 153 before the probe 31 reaches the root of the next tuning fork crystal 21.

[0073] S25. After probe 31 reaches the root of the next tuning fork chip 21, repeat steps S23 and S24 until all tuning fork chips 21 are measured. Then turn off the negative pressure source and take out wafer 2 and send it to the folding station A3.

[0074] Probe 31 typically performs measurements along an S-shaped trajectory.

[0075] S3. Remove the tuning fork chip 21 from the wafer 2 and send it to the assembly station A4;

[0076] S4. Assemble the tuning fork chip 21 onto the product base and cure the assembly points at high temperature. Fine-tune the thickness of the metal plating layer on the surface of the tuning fork chip 21 by ion beam etching. Adjust the thickness to fine-tune the precise vibration frequency of the tuning fork chip 21.

[0077] S5. Send the unpackaged tuning fork resonator product to the test bench 6;

[0078] S51. Raise the vacuum chamber 61, connect the tuning fork resonator product to the analyzer 62, and then lower the vacuum chamber 61.

[0079] S52. After opening the replacement port 64 to displace the air inside the vacuum chamber 61, close the replacement port 64. The vacuum pump then evacuates the vacuum chamber 61 to the predetermined vacuum level.

[0080] S53. After reaching the predetermined vacuum level, start the analyzer 62 to analyze the product;

[0081] S54. After the analysis is completed, open the replacement port 64 to fill the vacuum chamber 61 with inactive gas to break the vacuum environment, raise the vacuum chamber 61 and take out the product.

[0082] S6. Vacuum encapsulate the tuning fork resonator product to complete the entire production process.

[0083] The first measuring station A2 includes a fixed base 5, on which an X-axis slide 51 and a Y-axis slide 53 are mounted perpendicularly to each other. A Z-axis slide 52 arranged in the vertical direction is fixed on the Y-axis slide 53. The Z-axis slide 52 can slide along the length of the Y-axis slide 53.

[0084] A horizontally suspended fixed arm 521 is fixed to the slide of the Z-axis slide table 52. The measurement system 3 and the CCD recognition system 4 are both mounted on the end of the fixed arm 521. The measurement system 3 is plate-shaped with an observation port 32 at its center. A probe 31 is fixed below the observation port 32 and is connected to a frequency meter via a circuit. After the probe 31 abuts against the root of the tuning fork crystal 21, it can apply vibration to the tuning fork crystal 21, and the vibration frequency is recorded by the frequency meter.

[0085] The CCD recognition system 4 is fixed above the measurement system 3, with its detection port facing the location of the probe 31, thus magnifying and observing the probe 31.

[0086] A mounting base 531 is fixed on the slide of the X-axis slide 51, and the positioning platform 1 is fixed on the mounting base 531. The X-axis slide 52, Y-axis slide 53 and Z-axis slide 52 can coarsely adjust the position of the measurement module 3 and the positioning platform 1, and the mounting base 531 can drive the positioning platform 1 to finely adjust the position.

[0087] The positioning platform 1 is a horizontally arranged square platform. The wafer 2 is placed on the top of the positioning platform 1 and abuts against the positioning protrusions 12 that are spaced apart on the top of the positioning platform 1, thereby achieving position positioning.

[0088] The positioning protrusions 12 are preferably distributed in an L-shape, and when they cooperate with each other, they form a right-angled positioning end to complete the positioning of the wafer piece 2.

[0089] The top of the positioning platform 1 is also provided with an adsorption hole 13 corresponding to the wafer sheet 2, and a negative pressure hole 14 corresponding to the position of the tuning fork crystal 21 on the wafer sheet 2. A negative pressure interface 11 is provided at the front end of the positioning platform 1, and a negative pressure source, typically a vacuum pump, is connected to the negative pressure pipeline 15 inside the positioning platform 1 through the negative pressure interface 11. The negative pressure pipeline 15 has two branches: a first negative pressure channel 151 connected to the adsorption hole 13 and a second negative pressure channel 152 connected to the negative pressure hole 14.

[0090] Each negative pressure hole 14 is controlled by a set of solenoid valves 153 to open and close simultaneously, or each negative pressure hole 14 is controlled by a set of solenoid valves 153. The first negative pressure channel 151 is not valve-controlled and continuously adsorbs and fixes the wafer 2. The second negative pressure channel 151 is controlled by a solenoid valve 153, which opens and closes instantaneously after the probe 31 leaves the tuning fork crystal 21, generating a momentary negative pressure, thereby drawing airflow from the negative pressure hole 14, and using the rapidly flowing airflow to consume the vibration energy of the tuning fork crystal 21.

[0091] The first measurement station A5 includes a test bench 6, the surface of which has a groove that matches the shape of the vacuum chamber 61 for the vacuum chamber 61 to be placed and positioned.

[0092] The test platform 6 is fixed with a telescopic rod 611, which drives the vacuum chamber 61 to rise and fall through the telescopic movement of the telescopic rod 611.

[0093] The analyzer 62 is fixed on the test stage 6 and enclosed by the vacuum chamber 61. The vacuum chamber 61 and the test stage 6 cooperate to form a test chamber. The opening of the vacuum chamber 61 is provided with a silicone ring or rubber ring to improve the sealing performance.

[0094] The test stand 6 has a vacuum port 63 that connects to the test chamber. The opening of the vacuum port 63 is sealed with a three-way valve. One outlet of the three-way valve is connected to a vacuum pump, and the other outlet is connected to a vacuum resistance gauge to determine the vacuum level in the test chamber.

[0095] The test stand 6 is also equipped with a displacement port 64 that communicates with the test chamber. The displacement port 64 is connected to an inert gas source via a pipeline. The inert gas source can be nitrogen or an inert gas, but nitrogen is preferred.

[0096] At the start of the test, the replacement port 64 is opened simultaneously with the vacuum pump, thereby replacing the air in the test chamber with an inactive gas. After the replacement is completed, the replacement port 64 is closed, so that the test chamber is evacuated to the predetermined vacuum level.

[0097] After the test is completed, the replacement port 64 is opened again, and inactive gas is injected into the test chamber to break the negative pressure environment inside the test chamber, so that the vacuum chamber 61 can be opened normally.

[0098] The test bench 6 is equipped with a control panel 65 to control the opening and closing of various components on the test bench 6.

[0099] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0100] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0101] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0102] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0103] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A method for manufacturing a tuning fork resonator, characterized in that, Includes the following steps: S1. Complete the layout of the production line, which includes the following workstations arranged sequentially along the production direction: Production station (A1) processes wafer raw materials into wafers (2); The first measuring station (A2) includes a positioning platform (1) with a negative pressure pipeline (15) connected to a negative pressure source inside; a wafer (2) fixed on the positioning platform (1); a measuring system (3) set above the wafer (2), with the probe (31) of the measuring system (3) connected to a frequency meter, and the probe (31) sequentially applying vibration to the root of each tuning fork crystal (21) on the wafer (2); a negative pressure hole (14) opened on the positioning platform (1) and connected to the negative pressure pipeline (15), with the negative pressure hole (14) corresponding to the position of the tuning fork crystal (21); the negative pressure hole (14) is closed when the probe (31) applies vibration, and opens after the probe (31) leaves the tuning fork crystal (21); Folding station (A3) folds out tuning fork chip (21) from wafer sheet (2); At the assembly station (A4), the tuning fork chip (21) is solidified onto the product base; The second measurement station (A5) includes a test bench (6) and a vacuum chamber (61) fixed on the test bench (6). The vacuum chamber (61) and the test bench (6) enclose a test cavity. The unpackaged product to be tested is connected to an analyzer (62) located in the test cavity. The vacuum pump is connected to the test cavity through a vacuum port (63) opened on the test bench (6). The test bench (6) is also provided with a replacement port (64) connected to the test cavity. The replacement port (64) is connected to an inactive gas source. The packaging station (A6) vacuum-seals the product. After the production line is set up, the photolithography wafer material is placed in the yellow light workshop of the production station (A1). The wafer is then exposed, developed, wet etched and sputtered to obtain a wafer (2). S2. Send the wafer (2) to the positioning platform (1) of the first measurement station (A2); S21. Make the wafer sheet (2) abut against each positioning protrusion (12), start the negative pressure source to ensure that the wafer sheet (2) is fixed by negative pressure through the adsorption hole (13), and at this time the solenoid valve (153) is closed. S22. Adjust the positions of the X-axis slide (51), Y-axis slide (53), and Z-axis slide (52) so that the probe (31) abuts against the root of the first set of tuning fork crystals (21), and the CCD recognition system (4) performs recognition and observation on the tuning fork crystals (21). S23, the probe (31) applies vibration to the root of the tuning fork crystal (21), the frequency meter measures the vibration frequency of the tuning fork crystal (21), and after the measurement is completed, the probe (31) is moved to the root of the next tuning fork crystal (21) by the relative movement of the X-axis slide (51), Y-axis slide (53), and Z-axis slide (52); In steps S24 and S23, when the probe (31) moves, the solenoid valve (153) is opened, and an instantaneous negative pressure is applied to the area where the measured tuning fork crystal (21) is located through the negative pressure hole (14), and the solenoid valve (153) is closed before the probe (31) reaches the root of the next tuning fork crystal (21). S25. After the probe (31) reaches the root of the next tuning fork wafer (21), repeat steps S23 and S24 until all tuning fork wafers (21) are measured. Then turn off the negative pressure source and take out the wafer (2) and send it to the folding station (A3). S3. Remove the tuning fork chip (21) from the wafer sheet (2) and send it to the assembly station (A4). S4. The tuning fork chip (21) is assembled onto the product base and the assembly point is cured at high temperature. The thickness of the tuning fork chip (21) is finely adjusted by ion beam etching. S5. Send the unpackaged tuning fork resonator product to the test bench (6). S51. Raise the vacuum chamber (61), connect the tuning fork resonator product to the analyzer (62), and then lower the vacuum chamber (61). S52. Open the replacement port (64) to replace the air in the vacuum chamber (61), then close the replacement port (64). The vacuum pump will then evacuate the vacuum chamber (61) to the specified vacuum level. S53. After reaching the specified vacuum level, start the analyzer (62) to analyze the product; S54. After the analysis is completed, open the replacement port (64) and fill the vacuum chamber (61) with inactive gas to break the vacuum environment, raise the vacuum chamber (61) and take out the product. S6. Vacuum encapsulate the tuning fork resonator product to complete the entire production process; The positioning platform (1) is provided with an adsorption hole (13) that fits against the surface of the wafer sheet (2). The negative pressure pipeline (15) is divided to form a first negative pressure channel (151) that communicates with the adsorption hole (13) and a second negative pressure channel (152) that communicates with the negative pressure hole (14). A solenoid valve (153) is provided on the second negative pressure channel (152) to control the opening and closing of the negative pressure hole (14).

2. The method for producing a tuning fork resonator according to claim 1, characterized in that, The positioning platform (1) has L-shaped positioning protrusions (12) that abut against the wafer piece (2). The positioning protrusions (12) cooperate with each other to form a positioning end for right-angle positioning of the wafer piece (2).

3. A method for producing a tuning fork resonator according to any one of claims 1 to 2, characterized in that, The measurement system (3) has an observation port (32) located above the probe (31), and the CCD recognition system (4) is fixed on the measurement system (3) with the detection port of the CCD recognition system (4) facing the probe (31).

4. A method for producing a tuning fork resonator according to any one of claims 1 to 2, characterized in that, The positioning platform (1) and the measuring system (3) are both mounted on the fixed base (5). The fixed base (5) is provided with an X-axis slide (51) and a Y-axis slide (53) arranged perpendicularly to each other. The positioning platform (1) is fixed on the mounting base (531) of the X-axis slide (51). The Y-axis slide (53) is also fixed with a Z-axis slide (52) that moves in the vertical direction. The measuring system (3) is clamped and fixed by the fixed arm (521) on the Z-axis slide (52).

5. A method for producing a tuning fork resonator according to any one of claims 1 to 2, characterized in that, The vacuum chamber (61) is fixed on the telescopic rod (611) of the test bench (6) so that it can lift and lower. A silicone ring is provided at the opening of the vacuum chamber (61).

6. A method for producing a tuning fork resonator according to any one of claims 1 to 2, characterized in that, The vacuum port (63) is connected to the vacuum pump via a vacuum pipe (66), and a vacuum resistance gauge is also connected to the vacuum pipe (66).

7. A method for producing a tuning fork resonator according to any one of claims 1 to 2, characterized in that, The inactive gas source is nitrogen or inert gas. The test bench (6) is equipped with a control panel (65) to control the opening and closing of the vacuum port (63) and the replacement port (64).

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