Microelectronic component, electronic device and method of manufacturing a microelectronic component

Abstract

This application provides microelectronic components, electronic devices, and methods for fabricating microelectronic components, relating to the field of microelectronic integrated circuits. The microelectronic component includes a substrate, a functional layer, a microbridge structure, and a supporting conductive element. The functional layer is disposed on the substrate and is in electrical contact with it. The microbridge structure is disposed on the side of the functional layer away from the substrate, forming a gap between it and the functional layer. A first end of the supporting conductive element is in electrical contact with the microbridge structure, and a second end of the supporting conductive element is in electrical contact with the functional layer, thereby releasing the charge on the microbridge structure to the substrate through the supporting conductive element and the functional layer. This application solves the problem that when observing the microbridge structure using a scanning electron microscope, charge accumulation forms on the microbridge structure, causing the microbridge structure to bend or even collapse, thus affecting the normal use of the microelectronic component.

Description

Technical Field

[0001] This application relates to the field of microelectronic integrated circuits, and more particularly to microelectronic components, electronic devices, and methods for fabricating microelectronic components. Background Technology

[0002] Micro-Electro-Mechanical Systems (MEMS) technology is an advanced manufacturing technology with numerous advantages, including miniaturization, feasibility, integrability, and good process compatibility, and is widely used in many high-tech industries. Microelectronic components are a common structure in MEMS and are widely used in products such as detectors and sensors.

[0003] Microelectronic components include microbridge structures, which can be suspended using a sacrificial layer release process. When a microbridge structure is observed using a scanning electron microscope, the charge emitted by the microscope accumulates on the microbridge structure, causing it to bend or even collapse, thus affecting the normal use of the microelectronic component. Summary of the Invention

[0004] This application provides microelectronic components, electronic devices, and methods for fabricating microelectronic components to solve the problem that when observing microbridge structures using a scanning electron microscope, charge accumulation occurs on the microbridge structures, causing them to bend or even collapse, thus affecting the normal use of the microelectronic components.

[0005] The microelectronic component provided in this application includes a substrate, a functional layer, a microbridge structure, and a supporting conductive component;

[0006] The functional layer is disposed on the substrate and is in electrical contact with the substrate;

[0007] The microbridge structure is disposed on the side of the functional layer away from the substrate, and a gap is formed between it and the functional layer;

[0008] The first end of the supporting conductive element is electrically contacted on the microbridge structure, and the second end of the supporting conductive element is electrically contacted on the functional layer, so as to release the charge on the microbridge structure to the substrate through the supporting conductive element and the functional layer.

[0009] By adopting the above technical solution, a functional layer is set on the substrate, and the functional layer is electrically contacted with the substrate; and a microbridge structure and a supporting conductive element are formed on the sacrificial layer, such that the first end of the supporting conductive element is electrically contacted on the microbridge structure, and the second end of the supporting conductive element is electrically contacted on the functional layer, thereby releasing the charge on the microbridge structure to the substrate through the supporting conductive element and the functional layer; when the microbridge structure of the microelectronic component is observed using a scanning electron microscope, the charge emitted by the scanning electron microscope accumulates on the microbridge structure, and the first end of the supporting conductive element is electrically contacted with the microbridge structure, thereby enabling the charge to be conducted to the functional layer through the supporting conductive element, and then to the substrate through the functional layer, thereby reducing the possibility of charge accumulation on the microbridge structure and reducing the possibility of the microbridge structure bending or even collapsing.

[0010] The functional layer is further configured to include a back-end interconnect layer and a reflective layer stacked together.

[0011] The back-end interconnect layer is disposed on the substrate, and the reflective layer is disposed on the side of the back-end interconnect layer away from the substrate and is in electrical contact with the second end of the supporting conductive element.

[0012] The back-end interconnect layer is further configured to include a first via, a reflective portion, and a second via.

[0013] One end of the first via is connected to the substrate, and the other end is connected to the reflective portion;

[0014] The second through hole is disposed on the side of the reflective part away from the first through hole, and one end of the second through hole is connected to the reflective part, and the other end is connected to the reflective layer.

[0015] And / or, the reflective layer is formed with a filling groove, and a dielectric layer is disposed in the filling groove.

[0016] The microbridge structure is further configured to include a main body and a connecting part that are connected to each other.

[0017] The main body includes a sensitive layer, a first electrode layer, and a first protective layer. The first electrode layer is disposed on the side of the sensitive layer away from the substrate, and the first protective layer covers the outside of the sensitive layer and the first electrode layer.

[0018] The connection portion includes a second electrode layer and two second protective layers, with the two second protective layers respectively disposed on both sides of the second electrode layer in the direction close to or far from the substrate.

[0019] A further configuration is that the first end of the supporting conductive element passes through the main body portion, and at least a portion of the supporting conductive element passes through the sensitive layer and makes electrical contact with the first electrode layer.

[0020] A further configuration is provided, wherein a fixing portion is formed at the first end of the supporting conductive member, and the fixing portion is disposed between the first electrode and the first protective layer.

[0021] Further configured, the main body portion is provided with multiple portions, and the connecting portion is provided between adjacent main body portions; the multiple first electrode layers are connected through the second electrode layer.

[0022] Further configured, the substrate is formed with a P-type doped region or an N-type doped region.

[0023] An electronic device comprising the aforementioned microelectronic components.

[0024] By adopting the above technical solution, a functional layer is set on the substrate, and the functional layer is electrically contacted with the substrate; and a microbridge structure and a supporting conductive element are formed on the sacrificial layer, such that the first end of the supporting conductive element is electrically contacted on the microbridge structure, and the second end of the supporting conductive element is electrically contacted on the functional layer, thereby releasing the charge on the microbridge structure to the substrate through the supporting conductive element and the functional layer; when the microbridge structure of the microelectronic component in the electronic device is observed using a scanning electron microscope, the charge emitted by the scanning electron microscope accumulates on the microbridge structure, and the first end of the supporting conductive element is electrically contacted with the microbridge structure, thereby enabling the charge to be conducted to the functional layer through the supporting conductive element, and then to the substrate through the functional layer, thereby reducing the possibility of charge accumulation on the microbridge structure and reducing the possibility of the microbridge structure bending or even collapsing.

[0025] A method for fabricating a microelectronic component, comprising:

[0026] Provide substrate;

[0027] A functional layer is formed on the substrate, and the functional layer is in electrical contact with the substrate;

[0028] A sacrificial layer is formed on the side of the functional layer away from the substrate;

[0029] A microbridge structure and a supporting conductive element are formed. The microbridge structure is disposed on the side of the sacrificial layer away from the functional layer. The first end of the supporting conductive element is electrically contacted on the microbridge structure, and the second end of the supporting conductive element is electrically contacted on the functional layer.

[0030] The sacrificial layer is removed to form a gap between the microbridge structure and the functional layer.

[0031] By adopting the above technical solution, when fabricating microelectronic components, a functional layer is formed on the substrate, and the functional layer is in electrical contact with the substrate; a microbridge structure and a supporting conductive element are formed on the sacrificial layer, such that the first end of the supporting conductive element is in electrical contact with the microbridge structure, and the second end of the supporting conductive element is in electrical contact with the functional layer; thus, when the microbridge structure of the microelectronic component is observed using a scanning electron microscope, the charge emitted by the scanning electron microscope accumulates on the microbridge structure, and the first end of the supporting conductive element is in electrical contact with the microbridge structure, thereby enabling the charge to be conducted through the supporting conductive element to the functional layer, and through the functional layer to the substrate, thereby reducing the possibility of charge accumulation on the microbridge structure and reducing the possibility of the microbridge structure bending or even collapsing.

[0032] The step of forming a functional layer on the substrate is further configured to include:

[0033] A back-end interconnect layer is formed on the surface of a substrate. A first via, a reflective portion, and a second via are formed within the back-end interconnect layer. One end of the first via is connected to the substrate, and the other end is connected to the reflective portion. The second via is disposed on the side of the reflective portion away from the first via, and one end of the second via is connected to the reflective portion.

[0034] A reflective layer is formed on the side of the back-end interconnect layer away from the substrate.

[0035] The method is further configured such that, after forming a reflective layer on the surface of the back-end interconnect layer away from the substrate, the method also includes;

[0036] A filling groove is formed in the reflective layer;

[0037] A dielectric layer is formed within the filling groove, and the surface of the dielectric layer away from the substrate is flush with the reflective layer.

[0038] The step of forming the microbridge structure and supporting conductive element on the sacrificial layer further includes:

[0039] A main body and a supporting conductive element are formed on the side of the sacrificial layer away from the functional layer;

[0040] A connecting portion is formed on the side of the sacrificial layer away from the functional layer, and the connecting portion connects to the main body portion.

[0041] A further configuration includes, in the step of forming the main body and the supporting conductive element on the side of the sacrificial layer away from the functional layer, the following:

[0042] A first protective layer is formed on the side of the sacrificial layer away from the functional layer, a sensitive layer is formed on the side of the first protective layer away from the sacrificial layer, and a first electrode layer is formed on the side of the sensitive layer away from the first protective layer.

[0043] A filling hole is formed in the direction of the microbridge structure near or away from the substrate. The first end of the filling hole is disposed in the first electrode layer. The filling hole passes through the sensitive layer, the first protective part and the sacrificial layer in sequence. The second end of the filling hole is disposed on the side of the sacrificial layer near the functional layer.

[0044] A supporting conductive element is formed within the filling hole, with a first end of the supporting conductive element electrically contacting the first electrode layer and a second end of the supporting conductive element electrically contacting the functional layer.

[0045] A second protective portion is formed on the first protective portion. The second protective portion is disposed outside the sensitive layer and the first electrode layer and covers the first end of the supporting conductive member, so that the first protective portion and the second protective portion together constitute the first protective layer to form the main body portion.

[0046] A further configuration includes, in the step of forming the connection portion on the side of the sacrificial layer away from the functional layer:

[0047] A second protective layer is formed on the side of the sacrificial layer away from the functional layer;

[0048] A second electrode layer is formed on the side of the second protective layer away from the sacrificial layer, and the second electrode layer is connected to the first electrode layer;

[0049] Another second protective layer is formed on the side of the second electrode layer away from the sacrificial layer, so that the second electrode layer is disposed between the two second protective layers. Attached Figure Description

[0050] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0051] Figure 1 This is a structural cross-sectional view of a microelectronic component provided in an embodiment of this application;

[0052] Figure 2 This is a cross-sectional view of a microelectronic component filled with a sacrificial layer provided in an embodiment of this application.

[0053] Figure 3 Provided for the embodiments of this application Figure 2 A magnified view of a section at point A in the middle;

[0054] Figure 4 A schematic flowchart illustrating the fabrication method of the microelectronic component provided in this application embodiment;

[0055] Figure 5 This is a schematic diagram of the process for forming a functional layer on a substrate, provided in an embodiment of this application.

[0056] Figure 6 A schematic diagram illustrating the process of forming a microbridge structure and supporting conductive components, provided for an embodiment of this application;

[0057] Figure 7 A schematic diagram illustrating the process of forming the main body and supporting conductive components according to an embodiment of this application;

[0058] Figure 8 This is a schematic diagram of the process for forming the connecting portion provided in an embodiment of this application.

[0059] Explanation of reference numerals in the attached figures:

[0060] 100, Substrate; 110, P-type doped region; 200, Functional layer; 210, Back-end interconnect layer; 211, First via; 212, Reflective portion; 213, Second via; 220, Reflective layer; 221, Filler trench; 222, Dielectric layer; 300, Sacrificial layer; 400, Microbridge structure; 410, Main body; 411, First protective layer; 411A, First protective portion; 411B, Second protective portion; 412, Sensitive layer; 413, First electrode layer; 420, Connector; 421, Second electrode layer; 422, Second protective layer; 500, Supporting conductive element; 510, Fixing portion; 600, Filler hole; 700, Gap.

[0061] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0062] As described in the background section, due to the insufficient resolution of optical microscopes, scanning electron microscopes are usually required to observe microelectronic components. When observing microbridge structures on microelectronic components using a scanning electron microscope, the charges emitted by the scanning electron microscope accumulate on the microbridge structures, forming charge accumulation. Since the microbridge structures are designed as suspended structures, the charge accumulation can cause the microbridge structures to bend or even collapse, thereby affecting the normal use of the microelectronic components.

[0063] To address the aforementioned technical problems, this application provides a microelectronic component, an electronic device, and a method for fabricating the microelectronic component. When the microbridge structure of the microelectronic component is observed using a scanning electron microscope, the charge emitted by the scanning electron microscope accumulates on the microbridge structure. The first end of the supporting conductive element is in electrical contact with the microbridge structure, thereby enabling the charge to be conducted through the supporting conductive element to the functional layer and through the functional layer to the substrate. This reduces the possibility of charge accumulation on the microbridge structure and reduces the possibility of the microbridge structure bending or even collapsing.

[0064] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0065] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will be described below with reference to the accompanying drawings.

[0066] Reference Figures 1-2 This application provides a microelectronic component, including a substrate 100, a functional layer 200, a microbridge structure 400, and a supporting conductive element 500. Exemplarily, the substrate 100, the functional layer 200, and the microbridge structure 400 are sequentially arranged along a first direction. Specifically, the functional layer 200 is disposed on the substrate 100 and is in electrical contact with the substrate 100; and the microbridge structure 400 is disposed on the side of the functional layer 200 away from the substrate 100, with a gap 700 formed between the microbridge structure 400 and the functional layer 200, thereby making the microbridge structure 400 a suspended structure.

[0067] Furthermore, the first end of the supporting conductive element 500 is electrically contacted on the microbridge structure 400, and the second end of the supporting conductive element 500 is electrically contacted on the functional layer 200, so that the charge on the microbridge structure 400 is released to the substrate 100 in sequence through the supporting conductive element 500 and the functional layer 200, thereby reducing the possibility of charge accumulation in the microbridge structure 400.

[0068] In this embodiment, the substrate 100 serves as a support component for microelectronic components, supporting other components disposed thereon. The substrate 100 can be made of a semiconductor material, which can be one or more of silicon, germanium, silicon-germanium compounds, and silicon-carbide compounds. The substrate 100 has a P-type doped region 110 or an N-type doped region. The N-type and P-type doped regions 110 can be formed by doping ions into the substrate 100 using ion implantation technology. For example, phosphorus ions or arsenic ions can be implanted into the substrate 100 to form an N-type doped region; or boron ions can be implanted into the substrate 100 to form a P-type doped region 110. Exemplarily, the substrate 100 has a P-type doped region 110.

[0069] Continue to refer to Figures 1-2 The specific structure of the functional layer 200 is described below. It is easy to understand that the functional layer 200 can release the charge on the supporting conductive element 500 to the substrate 100, thus possessing a certain charge conduction capability. For example, the functional layer 200 includes a back-end interconnect layer 210 and a reflective layer 220 stacked together. The back-end interconnect layer 210 is disposed on the substrate 100, and the reflective layer 220 is disposed on the side of the back-end interconnect layer 210 away from the substrate 100, and is in electrical contact with the second end of the supporting conductive element 500, thereby allowing the charge on the supporting conductive element 500 to be released to the substrate 100 sequentially through the reflective layer 220 and the back-end interconnect layer 210.

[0070] The back-end interconnect layer 210, also known as the BEOL (Back End Of Line) back-end interconnect layer 210, has at least one conductive structure, including a first via 211, a reflective portion 212, and a second via 213. The first via 211, the reflective portion 212, and the second via 213 are arranged sequentially along a first direction. One end of the first via 211 is connected to the substrate 100, and the other end is connected to the reflective portion 212. The second via 213 is located on the side of the reflective portion 212 away from the first via 211. One end of the second via 213 is connected to the reflective portion 212, and the other end is connected to the reflective layer 220, so that the charge on the reflective layer 220 can be conducted to the substrate 100 sequentially through the first via 211, the reflective portion 212, and the second via 213. The first through-hole 211 is also called a tungsten through-hole, and the second through-hole 213 is also called a tungsten contact hole. It is easy to understand that both the first through-hole 211 and the second through-hole 213 are filled with metallic tungsten. The reflective part 212 is made of a metallic material, such as one or more of Ti, TiN and Al.

[0071] It is also easy to understand that multiple conductive structures can be configured, and when multiple conductive structures are configured, the multiple conductive structures can be evenly arranged on the back-end interconnect layer 210, or arranged on the back-end interconnect layer 210 in other ways. The embodiments of this application do not impose further limitations on this.

[0072] In this embodiment, the reflective layer 220 corresponds to the microbridge structure 400, and the reflective layer 220 has a filling groove 221. A dielectric layer 222 is disposed within the filling groove 221, and in a first direction, the side of the dielectric layer 222 away from the substrate 100 is flush with the reflective layer 220. Exemplarily, the reflective layer 220 is made of a metallic material, such as one or more of titanium, titanium nitride, and aluminum, and the dielectric layer 222 is made of silicon dioxide, thereby enabling the reflective layer 220 to provide a certain degree of conductivity.

[0073] The microbridge structure 400 includes a main body 410 and a connecting part 420, which are described below in conjunction with... Figure 2 and Figure 3 The microbridge structure 400 is described. Figure 2 A cross-sectional view of the structure of a microelectronic component filled with sacrificial layer 300, and as shown... Figure 2 As shown, the cross-section passes through the main body portion 410 but not through the connecting portion 420. The main body portion 410 can be one or more, and this application embodiment does not further limit this. In this application embodiment, for example, multiple main body portions 410 are provided, and the connecting portion 420 is provided between adjacent main body portions 410 and is used to connect adjacent main body portions 410.

[0074] Reference Figure 2 and Figure 3 Specifically, the main body 410 includes a sensitive layer 412, a first electrode layer 413, and a first protective layer 411. The sensitive layer 412 is parallel to the substrate 100, and the material used to prepare the sensitive layer 412 can be one or more of boron- or phosphorus-doped amorphous silicon, V2O5, polycrystalline SiGe, and YBaCuO. The first electrode layer 413 is disposed on the side of the sensitive layer 412 away from the substrate 100, and the material used to prepare the first electrode layer 413 can be one of titanium, tantalum, stacked titanium nitride and titanium, stacked tantalum and tantalum nitride. The first protective layer 411 covers the outside of the sensitive layer 412 and the first electrode layer 413, thereby enabling the first protective layer 411 to provide a certain degree of protection for the sensitive layer 412 and the first electrode layer 413, and to release the charge accumulated on the first electrode layer 413 to the outside of the first protective layer 411. The material used to prepare the first protective layer 411 can be one or more of silicon dioxide, silicon oxynitride, silicon nitride, or silicon carbide.

[0075] Continue to refer to Figure 2 and Figure 3The connecting portion 420 includes a second electrode layer 421 and two second protective layers 422. In a first direction, the two second protective layers 422 are respectively disposed on both sides of the second electrode layer 421, thereby enabling the two second protective layers 422 to protect the second electrode layer 421. For example, the second protective layer 422 is connected to the first protective layer 411, and the second protective layer 422 can be integrally formed with the first protective layer 411 and made of the same material as the first protective layer 411; the second electrode layer 421 is connected to the first electrode layer 413 of the adjacent main body portion 410 and is made of the same material as the first electrode layer 413, thereby enabling the charges on the multiple main body portions 410 to be interconnected through the second electrode layer 421.

[0076] It should be noted that, in the embodiments of this application, during the fabrication of the microelectronic component, a sacrificial layer 300 is also provided on the side of the reflective layer 220 away from the back interconnect layer 210, so that in the first direction, both sides of the sacrificial layer 300 are in contact with the microbridge structure 400 and the reflective layer 220, respectively; and after the microbridge structure 400 is formed on the sacrificial layer 300, the sacrificial layer 300 is removed, thereby forming a gap 700 between the microbridge structure 400 and the reflective layer 220. The material used to fabricate the sacrificial layer 300 can be one or more of the following: polyimide, amorphous silicon, porous silicon, and silicon dioxide.

[0077] The following is combined Figures 1-3 The structure of the supporting conductive element 500 is described below. The supporting conductive element 500 can be provided in various length directions, as long as it can ensure that the supporting conductive element 500 can conduct the charge of the microbridge structure 400 to the reflective layer 220. For example, the supporting conductive element 500 extends along the first direction, and the second end of the supporting conductive element 500 is electrically contacted on the reflective layer 220. The first end of the supporting conductive element 500 passes through the main body 410, and at least part of the supporting conductive element 500 passes through the first protective layer 411 and the sensitive layer 412 in sequence, and is electrically contacted on the first electrode layer 413, so that the charge on the first electrode layer 413 can be conducted to the reflective layer 220 through the supporting conductive element 500.

[0078] It is readily understood that multiple supporting conductive elements 500 can be provided. For example, multiple supporting conductive elements 500 can be provided one-to-one with multiple main body portions 410, and the supporting conductive elements 500 can be inserted into the corresponding main body portion 410. Alternatively, in this embodiment, since the first conductive layers of multiple main body portions 410 are all connected through the second conductive layer, two supporting conductive elements 500 can be provided, thereby enabling the two supporting conductive elements 500 to conduct the charge accumulated on two or more main body portions 410 to the reflective layer 220. Furthermore, the supporting conductive elements 500 can be made of metallic materials, such as tungsten or aluminum, and this embodiment does not impose further limitations on this.

[0079] Reference Figures 1-3 Furthermore, in this embodiment, a fixing portion 510 is formed at the first end of the supporting conductive member 500. The fixing portion 510 is disposed between the first electrode and the first protective layer 411, and the first protective layer 411 covers the fixing portion 510. With a plane perpendicular to the first direction as the cross-section, the cross-sectional area of ​​the fixing portion 510 is larger than the cross-sectional area of ​​the supporting conductive member 500, so that the connection between the supporting conductive member 500 and the main body portion 410 can be made more stable by using the fixing portion 510.

[0080] In summary, when the microbridge structure 400 of the microelectronic component is observed using a scanning electron microscope, the charge emitted by the scanning electron microscope accumulates on the microbridge structure 400. The first end of the supporting conductive element 500 is in electrical contact with the first electrode layer 413 of the microbridge structure 400, and the first electrode layers 413 of the multiple main body parts 410 are connected through the second electrode layer 421. Thus, the charge of the multiple first electrode layers 413 can be conducted through the supporting conductive element 500 to the functional layer 200, which includes the reflective layer 220 and the back-end interconnect layer 210, and then conducted through the functional layer 200 to the substrate 100. This reduces the possibility of charge accumulation on the microbridge structure 400 and reduces the possibility of the microbridge structure 400 bending or even collapsing.

[0081] This application also provides an electronic device including the microelectronic components described above.

[0082] When a scanning electron microscope is used to observe the microbridge structure 400 of a microelectronic component in an electronic device, the charge emitted by the scanning electron microscope accumulates on the microbridge structure 400. The first end of the supporting conductive element 500 is in electrical contact with the first electrode layer 413 of the microbridge structure 400, and the first electrode layers 413 of the multiple main body parts 410 are connected through the second electrode layer 421. Thus, the charge of the multiple first electrode layers 413 can be conducted through the supporting conductive element 500 to the functional layer 200, which includes the reflective layer 220 and the back-end interconnect layer 210, and then conducted to the substrate 100 through the functional layer 200. This reduces the possibility of charge accumulation on the microbridge structure 400 and reduces the possibility of the microbridge structure 400 bending or even collapsing.

[0083] Reference Figures 1-4 This application also provides a method for fabricating a microelectronic component, comprising: providing a substrate 100; forming a functional layer 200 on the substrate 100, the functional layer 200 being electrically contacted with the substrate 100; forming a sacrificial layer 300 on the side of the functional layer 200 away from the substrate 100; forming a microbridge structure 400 and a supporting conductive element 500 on the sacrificial layer 300, such that the microbridge structure 400 is disposed on the side of the sacrificial layer 300 away from the functional layer 200, a first end of the supporting conductive element 500 is electrically contacted on the microbridge structure 400, and a second end of the supporting conductive element 500 is electrically contacted on the functional layer 200; and removing the sacrificial layer 300 to form a gap 700 between the microbridge structure 400 and the functional layer 200. This fabrication method specifically includes the following steps:

[0084] S101, Provide substrate 100;

[0085] In the embodiments of this application, the substrate 100 serves as a support component for microelectronic components, used to support other components disposed thereon, and the substrate 100 is formed with a P-type doped region 110 or an N-type doped region.

[0086] S102. A functional layer 200 is formed on the substrate 100, and the functional layer 200 is in electrical contact with the substrate 100.

[0087] Reference Figure 5 For example, the functional layer 200 includes a reflective layer 220 and a back-end interconnect layer 210 stacked along a first direction. The functional layer 200 is formed on the substrate 100 and includes:

[0088] S1021. A back-end interconnect layer 210 is formed on the surface of the substrate 100. A first via 211, a reflective portion 212, and a second via 213 are formed in the back-end interconnect layer 210. One end of the first via 211 is connected to the substrate 100, and the other end is connected to the reflective portion 212. The second via 213 is disposed on the side of the reflective portion 212 away from the first via 211, and one end of the second via 213 is connected to the reflective portion 212.

[0089] In this embodiment, the back-end interconnect layer 210 can be formed on the substrate 100 using BEOL (Back End Of Line) back-end technology, and the back-end interconnect layer 210 is provided with a plurality of conductive structures including a first via 211, a reflective portion 212 and a second via 213, so as to conduct the charge of the reflective layer 220 to the substrate 100 using the plurality of conductive structures.

[0090] S1022, A reflective layer 220 is formed on the surface of the back-end interconnect layer 210 away from the substrate 100;

[0091] In this embodiment, a reflective layer base can be formed on the surface of the substrate 100 by deposition, and then the reflective layer base can be patterned to remove part of the reflective layer base, thereby forming a reflective layer 220 with the remaining reflective layer base, which in turn enables the reflective layer 220 to communicate with the second via 213.

[0092] After the reflective layer 220 is formed on the surface of the substrate 100, a filling groove 221 is formed in the reflective layer 220, and a dielectric layer base is deposited in the filling groove 221. Then, the dielectric layer base is polished using a chemical mechanical polishing (CMP) method to form a dielectric layer 222, so that the side of the dielectric layer 222 away from the substrate 100 is flush with the reflective layer 220, thereby realizing the formation process of the reflective layer 220.

[0093] S103. A sacrificial layer 300 is formed on the side of the functional layer 200 away from the substrate 100;

[0094] It is readily understood that, in the first direction, the sacrificial layer 300 is formed on the side of the reflective layer 220 away from the back-end interconnect layer 210; exemplaryly, the sacrificial layer 300 can be formed on the side of the reflective layer 220 away from the substrate 100 in a variety of ways, such as coating or chemical vapor deposition (CVD) methods, and the embodiments of this application do not further limit this.

[0095] S104. A microbridge structure 400 and a supporting conductive element 500 are formed in the sacrificial layer 300, such that the microbridge structure 400 is disposed on the side of the sacrificial layer 300 away from the functional layer 200, the first end of the supporting conductive element 500 is electrically contacted on the microbridge structure 400, and the second end of the supporting conductive element 500 is electrically contacted on the functional layer 200.

[0096] Reference Figures 1-8 A microbridge structure 400 and a supporting conductive element 500 are formed in the sacrificial layer 300, specifically configured as follows:

[0097] S1041. A main body portion 410 is formed on the side of the sacrificial layer 300 away from the functional layer 200, and a supporting conductive element 500 is formed thereon.

[0098] In the embodiments of this application, the microbridge structure 400 includes a main body 410 and a connecting part 420. Therefore, the microbridge structure 400, such as the main body 410, can be formed in the part of the sacrificial layer 300 that is far away from the functional layer 200, that is, far away from the reflective layer 220, which makes the formation process of the microbridge structure 400 more convenient.

[0099] Specifically set as follows:

[0100] S10411, A first protective layer 411A is formed on the side of the sacrificial layer 300 away from the functional layer 200, a sensitive layer 412 is formed on the side of the first protective layer 411A away from the sacrificial layer 300, and a first electrode layer 413 is formed on the side of the sensitive layer 412 away from the first protective layer 411A.

[0101] For example, in order to make the formation process of the first protective layer 411 more convenient, in this embodiment of the application, the first protective layer 411 includes a first protective part 411A and a second protective part 411B, so that the formation process of the first protective layer 411 can be realized in two steps, making the formation process of the first protective layer 411 more convenient.

[0102] Specifically, the formation of the first protective portion 411A on the side of the sacrificial layer 300 away from the reflective layer 220 can be achieved in various ways, such as atomic layer deposition (ALD) or chemical vapor deposition (CVD). Then, a sensitive layer base can be formed on the side of the first protective portion 411A away from the sacrificial layer 300 by chemical vapor deposition (CVD) or physical vapor deposition (PVD), and the sensitive layer base is patterned to remove part of the sensitive layer base so that the remaining sensitive layer base forms the sensitive layer 412. Subsequently, a first electrode layer base is formed on the side of the sensitive layer 412 away from the first protective portion 411A by physical vapor deposition (PVD), and the first electrode layer base is patterned to remove part of the first electrode layer base so that the remaining first electrode layer base forms the first electrode layer 413.

[0103] S10412. Forming a filling hole 600: In the direction of the microbridge structure 400 near or away from the substrate 100, the first end of the filling hole 600 is disposed in the first electrode layer 413, and the filling hole 600 passes through the sensitive layer 412, the first protective part 411A and the sacrificial layer 300 in sequence, and the second end of the filling hole 600 is disposed on the side of the sacrificial layer 300 near the functional layer 200.

[0104] After the first protective layer 411A, the sensitive layer 412 and the first electrode layer 413 are formed in sequence, part of the sacrificial layer 300, the sensitive layer 412, the first protective layer 411A and the sacrificial layer 300 can be removed by etching or other means, and a filling hole 600 is formed, thereby enabling the formation of a supporting conductive element 500 within the filling hole 600.

[0105] S10413. A support conductive element 500 is formed in the filling hole 600. The first end of the support conductive element 500 is electrically contacted on the first electrode layer 413, and the second end of the support conductive element 500 is electrically contacted on the functional layer 200.

[0106] In this embodiment, a support conductive element 500 can be formed in the filling hole 600 by physical vapor deposition (PVD) or other methods, so that the first end of the support conductive element 500 can make electrical contact on the first electrode layer 413, and the second end of the support conductive element 500 can make electrical contact on the side of the reflective layer 220 away from the substrate 100.

[0107] Furthermore, a fixing part 510 is also formed at the first end of the supporting conductive element 500. It is easy to understand that, in the embodiments of this application, the fixing part 510 can be integrally formed at the first end of the supporting conductive element 500, or fixed at the first end of the supporting conductive element 500 by welding or other means, thereby realizing the formation process of the supporting conductive element 500.

[0108] S10414. A second protective part 411B is formed on the first protective part 411A. The second protective part 411B is disposed on the outside of the sensitive layer 412 and the first electrode layer 413 and covers the first end of the supporting conductive member 500, so that the first protective part 411A and the second protective part 411B together constitute the first protective layer 411 to form the main body part 410.

[0109] After the supporting conductive element 500 is formed in the filling hole 600, the second protective element 411B is formed on the first protective element 411A. The second protective element 411B can be formed in the same way as the first protective element 411A, which will not be described again in this embodiment. The second protective element 411B is disposed on the outside of the sensitive layer 412 and the first electrode layer 413 and covers the first end of the supporting conductive element 500. When the first end of the supporting conductive element 500 is also formed with a fixing part 510, the second protective element 411B covers the fixing part 510, so that it can form the first protective layer 411 together with the first protective element 411A, thereby completing the formation process of the main body 410.

[0110] S1042. A connecting portion 420 is formed on the side of the sacrificial layer 300 away from the functional layer 200, and the connecting portion 420 is connected to the main body portion 410.

[0111] In this embodiment of the application, multiple main bodies 410 may be provided, and connecting parts 420 are provided between adjacent main bodies 410 and are used to connect adjacent main bodies 410, thereby enabling the adjacent main bodies 410 to be connected.

[0112] After the main body 410 and the supporting conductive element 500 are formed on the side of the sacrificial layer 300 away from the reflective layer 220, the connecting part 420 can be formed by the following method, the specific steps of which are as follows:

[0113] S10421, A second protective layer 422 is formed on the side of the sacrificial layer 300 away from the functional layer 200;

[0114] For example, the second protective layer 422 may be attached to the first protective layer 411, and the second protective layer 422 may be made of the same material as the first protective layer 411 and deposited on the side of the sacrificial layer 300 away from the reflective layer 220 by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

[0115] S10422, A second electrode layer 421 is formed on the side of the second protective layer 422 away from the sacrificial layer 300, and the second electrode layer 421 is connected to the first electrode layer 413;

[0116] The second electrode layer 421 is used to connect the first electrode layer 413 on the multiple main body parts 410. The second electrode layer 421 can also be made of the same material as the first electrode layer 413 and is formed on the side of the second protective layer 422 away from the sacrificial layer 300 by physical vapor deposition (PVD) or other methods.

[0117] S10423. Another second protective layer 422 is formed on the side of the second electrode layer 421 away from the sacrificial layer 300, so that the second electrode layer 421 is disposed between the two second protective layers 422.

[0118] Subsequently, another second protective layer 422 is formed on the side of the second electrode layer 421 away from the sacrificial layer 300, so that the second electrode layer 421 can be protected by the two second protective layers 422. As for the material and formation method of the second electrode layer 421, the embodiments of this application will not be described in detail here.

[0119] By adopting the above technical solution, the main body 410 and the supporting conductive element 500 are first formed on the side of the sacrificial layer 300 away from the functional layer 200, and then the connecting part 420 is formed on the side of the sacrificial layer 300 away from the functional layer 200. This makes the formation process of the microbridge structure 400 more convenient, and the formation process of the supporting conductive element 500 can be completed during the formation of the main body 410, which also makes the connection between the supporting conductive element 500 and the main body 410 more stable.

[0120] S105. Remove the sacrificial layer 300 to form a gap 700 between the microbridge structure 400 and the functional layer 200.

[0121] After the formation process of the microbridge structure 400 and the supporting conductive element 500 is completed, the sacrificial layer 300 can be removed by etching or other means, thereby forming a gap 700 between the microbridge structure 400 and the reflective layer 220, and thus setting the microbridge structure 400 as a suspended structure.

[0122] In summary, when fabricating microelectronic components, a functional layer 200 is formed on a substrate 100, and the functional layer 200 is electrically contacted with the substrate 100; a microbridge structure 400 and a supporting conductive element 500 are formed on a sacrificial layer 300, such that the first end of the supporting conductive element 500 is electrically contacted on the microbridge structure 400, and the second end of the supporting conductive element 500 is electrically contacted on the functional layer 200; thus, when the microbridge structure 400 of the microelectronic component is observed using a scanning electron microscope, the charge emitted by the scanning electron microscope accumulates on the microbridge structure 400, and the first end of the supporting conductive element 500 is electrically contacted with the microbridge structure 400, thereby enabling the charge to be conducted through the supporting conductive element 500 to the functional layer 200, and through the functional layer 200 to the substrate 100, thereby reducing the possibility of charge accumulation on the microbridge structure 400, and reducing the possibility of the microbridge structure 400 bending or even collapsing.

[0123] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0124] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A microelectronic component, characterized in that, Includes substrate, functional layer, microbridge structure and supporting conductive components; The functional layer is disposed on the substrate and is in electrical contact with the substrate; The microbridge structure is disposed on the side of the functional layer away from the substrate, and a gap is formed between it and the functional layer; The first end of the supporting conductive element is electrically contacted on the microbridge structure, and the second end of the supporting conductive element is electrically contacted on the functional layer, so as to release the charge on the microbridge structure to the substrate through the supporting conductive element and the functional layer; The microbridge structure includes a main body and a connecting part that are connected to each other; The main body includes a sensitive layer, a first electrode layer, and a first protective layer. The first electrode layer is disposed on the side of the sensitive layer away from the substrate, and the first protective layer covers the outside of the sensitive layer and the first electrode layer. The connection portion includes a second electrode layer and two second protective layers. The second electrode layer is connected to the first electrode layer. In the direction of the microbridge structure near or away from the substrate, the two second protective layers are respectively disposed on both sides of the second electrode layer. The main body is provided with multiple parts, and the connecting parts are provided between adjacent main body parts; the multiple first electrode layers are connected through the second electrode layer; The first end of the supporting conductive element passes through the main body, and at least a portion of the supporting conductive element passes through the sensitive layer and makes electrical contact with the first electrode layer. The first end of the supporting conductive element has a fixing part, which is disposed between the first electrode layer and the first protective layer.

2. The microelectronic component according to claim 1, characterized in that, The functional layer includes a stacked back-end interconnect layer and a reflective layer; The back-end interconnect layer is disposed on the substrate, and the reflective layer is disposed on the side of the back-end interconnect layer away from the substrate and is in electrical contact with the second end of the supporting conductive element.

3. The microelectronic component according to claim 2, characterized in that, The back-end interconnect layer is provided with a first through-hole, a reflective part and a second through-hole; One end of the first via is connected to the substrate, and the other end is connected to the reflective portion; The second through hole is disposed on the side of the reflective part away from the first through hole, and one end of the second through hole is connected to the reflective part, and the other end is connected to the reflective layer; And / or, the reflective layer is formed with a filling groove, and a dielectric layer is disposed in the filling groove.

4. The microelectronic component according to claim 1, characterized in that, The substrate has a P-type doped region or an N-type doped region.

5. An electronic device, characterized in that, Includes the microelectronic components as described in any one of claims 1-4.

6. A method for fabricating a microelectronic component, characterized in that, include: Provide substrate; A functional layer is formed on the substrate, and the functional layer is in electrical contact with the substrate; A sacrificial layer is formed on the side of the functional layer away from the substrate; A microbridge structure and a supporting conductive element are formed. The microbridge structure is disposed on the side of the sacrificial layer away from the functional layer. The first end of the supporting conductive element is electrically contacted on the microbridge structure, and the second end of the supporting conductive element is electrically contacted on the functional layer. Remove the sacrificial layer to create a gap between the microbridge structure and the functional layer; The steps of forming the microbridge structure and supporting the conductive components include: A main body portion is formed on the side of the sacrificial layer away from the functional layer, and the supporting conductive element is formed thereon; A connecting portion is formed on the side of the sacrificial layer away from the functional layer, and the connecting portion connects to the main body portion; The step of forming the main body portion on the side of the sacrificial layer away from the functional layer and forming the supporting conductive element includes: A first protective layer is formed on the side of the sacrificial layer away from the functional layer, a sensitive layer is formed on the side of the first protective layer away from the sacrificial layer, and a first electrode layer is formed on the side of the sensitive layer away from the first protective layer. The connecting portion includes a second electrode layer, which is connected to the first electrode layer. The step of forming the connection portion on the side of the sacrificial layer away from the functional layer includes: forming a second protective layer on the side of the sacrificial layer away from the functional layer; A second electrode layer is formed on the side of the second protective layer away from the sacrificial layer; Another second protective layer is formed on the side of the second electrode layer away from the sacrificial layer, so that the second electrode layer is disposed between the two second protective layers; The main body is provided with multiple parts, and the connecting parts are provided between adjacent main body parts; the multiple first electrode layers are connected through the second electrode layer; The first end of the supporting conductive element passes through the main body, and at least a portion of the supporting conductive element passes through the sensitive layer and makes electrical contact with the first electrode layer. The first end of the supporting conductive element has a fixing part, which is disposed between the first electrode layer and the first protective layer.

7. The method for fabricating a microelectronic component according to claim 6, characterized in that, The step of forming a functional layer on a substrate includes: A back-end interconnect layer is formed on the substrate, and the back-end interconnect layer has a first via, a reflective portion, and a second via; one end of the first via is connected to the substrate, and the other end is connected to the reflective portion; the second via is disposed on the side of the reflective portion away from the first via, and one end of the second via is connected to the reflective portion; A reflective layer is formed on the surface of the back-end interconnect layer away from the substrate.

8. The method for fabricating a microelectronic component according to claim 7, characterized in that, After forming a reflective layer on the surface of the back-end interconnect layer away from the substrate, the method further includes; A filling groove is formed in the reflective layer; A dielectric layer is formed within the filling groove, and the surface of the dielectric layer away from the substrate is flush with the reflective layer.

9. The method for fabricating a microelectronic component according to claim 6, characterized in that, The step of forming the main body portion on the side of the sacrificial layer away from the functional layer and forming the supporting conductive element includes: A filling hole is formed in the direction of the microbridge structure near or away from the substrate. The first end of the filling hole is disposed in the first electrode layer. The filling hole passes through the sensitive layer, the first protective part and the sacrificial layer in sequence. The second end of the filling hole is disposed on the side of the sacrificial layer near the functional layer. A supporting conductive element is formed within the filling hole, with a first end of the supporting conductive element electrically contacting the first electrode layer and a second end of the supporting conductive element electrically contacting the functional layer. A second protective portion is formed on the first protective portion. The second protective portion is disposed outside the sensitive layer and the first electrode layer and covers the first end of the supporting conductive member, so that the first protective portion and the second protective portion together constitute the first protective layer to form the main body portion.

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