Organic film forming device and cleaning method of organic film forming device

Abstract

The present invention provides an organic film forming apparatus capable of fully removing foreign matter within a chamber, and a method for cleaning the organic film forming apparatus. The organic film forming apparatus of one embodiment includes: a chamber having an opening for loading and unloading a workpiece, capable of maintaining a gaseous environment at a relatively high pressure that has been further reduced; a door capable of opening and closing the chamber opening; an exhaust unit capable of exhausting the interior of the chamber; a support unit disposed within the chamber and capable of supporting the workpiece; a heating unit disposed within the chamber and capable of heating the workpiece; and at least one nozzle disposed within the chamber and capable of supplying a cleaning gas to the chamber opening.

Description

Technical Field

[0001] Embodiments of the present invention relate to an organic film forming apparatus and a method for cleaning the organic film forming apparatus. Background Art

[0002] An organic film forming apparatus, for example, includes a chamber capable of maintaining a relatively high pressure, further reduced pressure atmosphere, and a heater disposed within the chamber to heat a workpiece. This organic film forming apparatus forms an organic film by heating a substrate coated with a solution containing an organic material and a solvent in a relatively high pressure, further reduced pressure atmosphere, thereby evaporating the solvent contained in the solution. (For example, see Patent Document 1)

[0003] When a solution is heated, substances contained in the solution may sublime (vaporize). Components contained in the sublimates may solidify and adhere to the inner wall of the chamber, which is at a lower temperature than the heated workpiece. If the solid adheres to the inner wall of the chamber, etc., flakes off, it may become foreign matter such as particles and adhere to the surface of the workpiece.

[0004] Therefore, cleaning is performed periodically or as needed to remove solids adhering to the inner walls of the chamber. For example, in a technical field different from organic film formation equipment, such as semiconductor manufacturing equipment, a technology has been proposed that removes foreign matter from the interior of the chamber by sequentially exhausting the interior of the chamber and supplying a cleaning gas to the interior of the chamber while the chamber is sealed. (See Patent Document 2)

[0005] However, it was eventually discovered that even with the cleaning method similar to that of semiconductor manufacturing equipment (for example, exhausting the interior of the chamber and supplying a cleaning gas into the chamber in sequence while the chamber is sealed), foreign matter could not be fully removed in the organic film forming apparatus.

[0006] Therefore, there is a demand for the development of an organic film forming apparatus and a cleaning method for the organic film forming apparatus that can sufficiently remove foreign matter such as particles within a chamber.

[0007] [Prior art literature]

[0008] [Patent Document]

[0009] [Patent Document 1] Japanese Patent Application Laid-Open No. 2019-184229

[0010] [Patent Document 2] Japanese Patent Application Laid-Open No. 2002-184708 Summary of the Invention

[0011] [Problems to be solved by the invention]

[0012] The problem to be solved by the present invention is to provide an organic film forming apparatus and a cleaning method for the organic film forming apparatus that can sufficiently remove foreign matter inside a chamber.

[0013] [Technical means to solve the problem]

[0014] An organic film forming device of an embodiment includes: a chamber having an opening for moving a workpiece in or out, capable of maintaining a gas environment with a relatively high pressure that is further reduced in pressure; a door capable of opening and closing the opening of the chamber; an exhaust portion capable of exhausting the interior of the chamber; a support portion disposed inside the chamber and capable of supporting the workpiece; a heating portion disposed inside the chamber and capable of heating the workpiece; and at least one nozzle disposed inside the chamber and capable of supplying a clean gas to the opening of the chamber.

[0015] [Effects of the Invention]

[0016] According to an embodiment of the present invention, an organic film forming apparatus capable of sufficiently removing foreign matter in a chamber and a cleaning method of the organic film forming apparatus are provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic perspective view for illustrating the organic film forming apparatus according to this embodiment.

[0018] Figure 2 This is a diagram for illustrating the processing steps of a workpiece.

[0019] Figure 3 This is a schematic cross-sectional view for illustrating the function of the cleaning section.

[0020] Figure 4 This is a graph showing a combination of the discharge of particles by the exhaust unit and the discharge of particles by the cleaning unit.

[0021] Figure 5 This is a graph when only the particles are discharged by the cleaning unit.

[0022] Figure 6 This is a graph when only the particles are discharged by the cleaning unit.

[0023] Figure 7 This is a schematic cross-sectional view of a cleaning unit for illustrating another embodiment.

[0024] Figure 8 This is a schematic cross-sectional view of a cleaning unit for illustrating another embodiment.

[0025] Figure 9 This is a schematic perspective view of an organic film forming apparatus for illustrating another embodiment.

[0026] Figure 10 This is a schematic cross-sectional view of a cleaning unit for illustrating another embodiment.

[0027] Figure 11 This is a schematic perspective view of an organic film forming apparatus for illustrating another embodiment.

[0028] Figure 12 This is a schematic cross-sectional view of a cleaning unit for illustrating another embodiment.

[0029] [Explanation of Symbols]

[0030] 1, 1a, 1b: Organic film forming device

[0031] 10: Chamber

[0032] 11, 14: flange

[0033] 11a: Opening

[0034] 12: Sealing material

[0035] 13: Door (open and close)

[0036] 15: Cover

[0037] 16, 40, 140: Cooling section

[0038] 17, 18: Exhaust port

[0039] 20: Exhaust

[0040] 21: First exhaust section

[0041] 21a, 22a: Exhaust pump

[0042] 21b: Pressure control unit

[0043] 22: Second exhaust section

[0044] 22b: Pressure control unit

[0045] 23: Third exhaust section

[0046] 24: Cold Trap

[0047] 25: Valve

[0048] 30: Processing Department

[0049] 30a, 30b: Processing area

[0050] 31: Framework

[0051] 32: Heating unit

[0052] 32a: Heater

[0053] 32b: Retainer

[0054] 33: Support part

[0055] 34: Heat equalization section

[0056] 34a: Upper heat sink

[0057] 34b: Lower heat sink

[0058] 34c, 34d: Side heat sinks

[0059] 35: Heat sink support

[0060] 36: Hood

[0061] 40a: First gas supply path

[0062] 40b: Second gas supply path

[0063] 41, 51: Nozzle

[0064] 42, 52: Gas source

[0065] 43, 53: Gas control unit

[0066] 50, 50a, 50b, 50c, 150, 250: Cleaning department

[0067] 51a: Nozzle hole

[0068] 54: Switching valve

[0069] 55: Frame

[0070] 56: Testing Department

[0071] 60: Controller

[0072] 100: Workpiece (substrate)

[0073] 141: Nozzle (cooling nozzle)

[0074] G: Clean gas

[0075] X, Y, Z: direction DETAILED DESCRIPTION

[0076] Hereinafter, the embodiment will be described with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0077] Figure 1 It is a schematic perspective view for illustrating the organic film forming apparatus 1 according to this embodiment.

[0078] also, Figure 1The X direction, Y direction, and Z direction in the figure represent three directions that are orthogonal to each other. The up and down direction in this specification may be the Z direction.

[0079] The workpiece 100 before forming an organic film includes a substrate and a solution applied to the upper surface of the substrate.

[0080] The substrate can be, for example, a glass substrate or a semiconductor wafer, etc. However, the substrate is not limited to the examples shown.

[0081] The solution includes, for example, an organic material and a solvent. The organic material is not particularly limited as long as it can be dissolved in the solvent. The solution can be, for example, a varnish containing polyamic acid. However, the solution is not limited to the examples shown.

[0082] like Figure 1 As shown, the organic film forming apparatus 1 includes, for example, a chamber 10 , an exhaust unit 20 , a processing unit 30 , a cooling unit 40 , a cleaning unit 50 , and a controller 60 .

[0083] The controller 60 includes, for example, a computing unit such as a central processing unit (CPU) and a storage unit such as a memory. The controller 60 can be, for example, a computer. The controller 60 controls the operation of each element provided in the organic film forming apparatus 1 based on a control program stored in the storage unit.

[0084] The chamber 10 has an airtight structure capable of maintaining a relatively high pressure, further reduced pressure atmosphere. The chamber 10 is box-shaped. The external shape of the chamber 10 is not particularly limited. The external shape of the chamber 10 can be, for example, a rectangular parallelepiped. The chamber 10 can be formed of, for example, a metal such as stainless steel.

[0085] In the Y direction, a flange 11 may be provided at one end of the chamber 10. A sealing material 12 such as an O-ring may be provided on the flange 11. The opening 11a on the side of the chamber 10 on which the flange 11 is provided can be opened and closed by a door 13. The door 13 is pushed to the flange 11 (sealing material 12) by a driving device not shown in the figure, whereby the opening 11a of the chamber 10 is locked in an airtight manner. The door 13 is moved away from the flange 11 by a driving device not shown in the figure, thereby opening the opening 11a of the chamber 10, so that the workpiece 100 can be moved in or out through the opening 11a. In addition, by opening the opening 11a of the chamber 10, it can be cleaned by the cleaning unit 50 described later.

[0086] Specifically, the chamber 10 has an opening 11 a for loading and unloading the workpiece 100 and is capable of maintaining a relatively high pressure and further reduced pressure atmosphere.

[0087] A flange 14 may be provided at the other end of the chamber 10 in the Y direction. A sealing material 12, such as an O-ring, may be provided on the flange 14. The opening of the chamber 10 on the side where the flange 14 is provided can be opened and closed by a cover 15. For example, the cover 15 can be detachably attached to the flange 14 using a fastening member such as a screw. When performing maintenance, the opening of the chamber 10 on the side where the flange 14 is provided can be exposed by removing the cover 15.

[0088] A cooling unit 16 may be provided on the outer wall of the chamber 10 and the outer surface of the door 13. A cooling water supply (not shown) may be connected to the cooling unit 16. For example, the cooling unit 16 may be a water jacket. The provision of the cooling unit 16 prevents the temperature of the outer wall of the chamber 10 or the outer surface of the door 13 from exceeding a predetermined temperature.

[0089] The exhaust unit 20 exhausts the interior of the chamber 10. The exhaust unit 20 includes, for example, a first exhaust unit 21, a second exhaust unit 22, and a third exhaust unit 23.

[0090] The first exhaust portion 21 is connected to, for example, an exhaust port 17 provided on the bottom surface of the chamber 10 .

[0091] The first exhaust unit 21 includes, for example, an exhaust pump 21 a and a pressure control unit 21 b .

[0092] The exhaust pump 21a can be configured to perform rough exhaust from atmospheric pressure to a predetermined pressure. Therefore, the exhaust pump 21a has a larger exhaust volume than the exhaust pump 22a described later. For example, the exhaust pump 21a can be configured as a dry vacuum pump.

[0093] The pressure control unit 21b is provided, for example, between the exhaust port 17 and the exhaust pump 21a. The pressure control unit 21b controls the internal pressure of the chamber 10 to a predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber 10. The pressure control unit 21b can be, for example, an automatic pressure controller (APC).

[0094] A cold trap 24 for capturing the discharged sublimates is provided between the exhaust port 17 and the pressure control unit 21b. A valve 25 is also provided between the exhaust port 17 and the cold trap 24. The valve 25 prevents the fluid from flowing into the cold trap 24 during the cooling process described below.

[0095] The second exhaust portion 22 is connected to, for example, the exhaust port 18 provided on the bottom surface of the chamber 10 .

[0096] The second exhaust unit 22 includes, for example, an exhaust pump 22 a and a pressure control unit 22 b .

[0097] After the exhaust pump 21a performs rough exhaust, the exhaust pump 22a exhausts the air to a lower predetermined pressure. The exhaust pump 22a has an exhaust capacity capable of exhausting the air to a high vacuum molecular flow region. For example, the exhaust pump 22a can be a turbomolecular pump (TMP).

[0098] The pressure control unit 22b is, for example, disposed between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22b controls the internal pressure of the chamber 10 to a predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber 10. The pressure control unit 22b can be, for example, an APC. Furthermore, similar to the first exhaust unit 21, a cold trap 24 and a valve 25 can be disposed between the exhaust port 18 and the pressure control unit 21b.

[0099] Furthermore, although the exhaust ports 17 and 18 are provided on the bottom surface of the chamber 10, the exhaust ports 17 and 18 may be provided on, for example, the ceiling surface of the chamber 10. If the exhaust ports 17 and 18 are provided on the bottom surface or the ceiling surface of the chamber 10, airflow toward the bottom surface or the ceiling surface of the chamber 10 can be generated within the chamber 10.

[0100] Here, when the workpiece 100 coated with a solution containing an organic material and a solvent is heated, substances contained in the solution may sublime (gasify). Components contained in the sublimates may solidify and adhere to the inner wall of the chamber 10, etc., which is at a lower temperature than the heated workpiece 100. If the solid adhered to the inner wall of the chamber 10, etc., flakes off from the inner wall of the chamber 10, there is a risk that it may become foreign matter such as particles and adhere to the surface of the workpiece 100.

[0101] In this case, if airflow is formed inside the chamber 10 toward the bottom or ceiling of the chamber 10, foreign matter such as sublimates and particles can be easily discharged to the outside of the chamber 10 along with the airflow. Therefore, foreign matter such as particles can be prevented from adhering to the workpiece 100.

[0102] The processing unit 30 includes, for example, a frame 31 , a heating unit 32 , a support unit 33 , a heat equalizing unit 34 , a heat equalizing plate support unit 35 , and a cover 36 .

[0103] Inside the processing unit 30, a processing area 30a and a processing area 30b are provided. The processing area 30a and the processing area 30b serve as spaces for processing the workpiece 100. The workpiece 100 is supported inside the processing areas 30a and the processing areas 30b. The processing area 30b is provided above the processing area 30a. In addition, the case of providing two processing areas is illustrated, but this is not limited to this. Only one processing area may be provided, or three or more processing areas may be provided. In this embodiment, as an example, the case of providing two processing areas is illustrated, but the same consideration may be given to the case of providing one processing area and three or more processing areas.

[0104] The processing areas 30a and 30b are provided between the heating parts 32. The processing areas 30a and 30b are surrounded by a heat equalizing part 34 (upper heat equalizing plate 34a, lower heat equalizing plate 34b, side heat equalizing plates 34c, and side heat equalizing plates 34d).

[0105] As described later, the upper and lower soaking plates 34a and 34b are formed by a plurality of plate-shaped members supported by a plurality of soaking plate support portions 35. Therefore, the processing area 30a is connected to the space inside the chamber 10 via gaps provided between the upper soaking plates 34a and between the lower soaking plates 34b. In addition, gaps are also formed between the upper soaking plate 34a (lower soaking plate 34b) and the side soaking plates 34c, and between the upper soaking plate 34a (lower soaking plate 34b) and the side soaking plates 34d. Therefore, if the pressure in the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, the space inside the processing area 30a is also reduced. The processing area 30b has the same structure as the processing area 30a, so its description is omitted.

[0106] By reducing the pressure in the space between the inner wall of the chamber 10 and the processing unit 30, it is possible to suppress the amount of heat released from the processing areas 30a and 30b to the outside. In other words, the heating efficiency or heat storage efficiency can be improved. Consequently, the power applied to the heater 32a, described later, can be reduced. Furthermore, by reducing the power applied to the heater 32a, it is possible to prevent the temperature of the heater 32a from exceeding a predetermined temperature, thereby extending the life of the heater 32a.

[0107] Furthermore, due to the improved heat storage efficiency, the temperature of the processing areas 30a and 30b can be rapidly increased. Therefore, it is also possible to handle processes that require a rapid temperature increase. Furthermore, the temperature of the outer wall of the chamber 10 can be suppressed, thereby simplifying the cooling unit 16.

[0108] The frame 31 has a skeleton structure made of an elongated plate or steel, etc. The outer shape of the frame 31 can be the same as that of the chamber 10. For example, the outer shape of the frame 31 can be a rectangular parallelepiped.

[0109] A plurality of heating units 32 are provided. The heating units 32 can be provided at the lower portion of the processing area 30a, 30b, or at the upper portion of the processing area 30a, 30b. The heating unit 32 provided at the lower portion of the processing area 30a, 30b becomes the lower heating unit. The heating unit 32 provided at the upper portion of the processing area 30a, 30b becomes the upper heating unit. The lower heating unit and the upper heating unit face each other. In addition, when a plurality of processing areas are overlapped in the vertical direction, the upper heating unit provided at the processing area on the lower side can also serve as the lower heating unit provided at the processing area on the upper side.

[0110] The heating unit 32 is disposed inside the chamber 10 and heats the workpiece 100 .

[0111] For example, the lower surface (back surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 provided in the lower portion of the processing area 30a. The upper surface (front surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 used for both the processing area 30a and the processing area 30b.

[0112] The lower surface (back surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 used for both the processing area 30a and the processing area 30b. The upper surface (front surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 provided above the processing area 30b.

[0113] This can reduce the number of heating units 32 , thereby achieving reductions in power consumption, manufacturing costs, and space saving.

[0114] Each of the multiple heating units 32 includes at least one heater 32a and a pair of holders 32b. The following describes a case where multiple heaters 32a are provided. The heater 32a is rod-shaped and extends along the Y direction between the pair of holders 32b. The multiple heaters 32a can be arranged in an array along the X direction. For example, the multiple heaters 32a can be arranged at equal intervals. The heaters 32a can be, for example, sheathed heaters, far-infrared heaters, far-infrared lamps, ceramic heaters, cartridge heaters, and the like. Furthermore, various heaters can be covered by a quartz cover.

[0115] In this specification, various heaters covered with a quartz cover are also referred to as "rod-shaped heaters." The cross-sectional shape of "rod-shaped" is not limited and includes, for example, cylindrical or prismatic shapes.

[0116] The heater 32a is not limited to the example shown. The heater 32a can heat the workpiece 100 in a gas environment with a relatively high pressure that is further reduced in pressure. In other words, the heater 32a can utilize thermal energy obtained by radiation.

[0117] The specifications, number, and spacing of the plurality of heaters 32a in the upper heating section and the lower heating section can be appropriately determined based on the composition of the solution to be heated (the temperature at which the solution is heated), the size of the workpiece 100, and the like. The specifications, number, and spacing of the plurality of heaters 32a can be appropriately determined by performing simulations or experiments.

[0118] In addition, the space where the multiple heaters 32a are provided is surrounded by a holder 32b, an upper heat spreader 34a, a lower heat spreader 34b, a side heat spreader 34c, and a side heat spreader 34d. Gaps are provided between the upper heat spreaders 34a and between the lower heat spreaders 34b. Therefore, a portion of the cooling gas supplied from the cooling unit 40 described later to the space where the multiple heaters 32a are provided flows into the processing area 30a or the processing area 30b. However, the space where the multiple heaters 32a are provided can be regarded as a roughly closed space. Therefore, by supplying cooling gas from the cooling unit 40 to the space where the multiple heaters 32a are provided, the multiple heaters 32a, the upper heat spreader 34a, the lower heat spreader 34b, the side heat spreader 34c, and the side heat spreader 34d can be cooled.

[0119] A pair of holders 32b extend along the X direction (for example, the long side direction of the processing area 30a and the processing area 30b). A pair of holders 32b face each other in the Y direction. One of the holders 32b is fixed to the end face of the frame 31 on the door 13 side. The other holder 32b is fixed to the end face of the frame 31 on the opposite side to the door 13 side. The pair of holders 32b can be fixed to the frame 31 using fastening members such as screws, for example. The pair of holders 32b holds the non-heat-releasing portion near the end of the heater 32a. The pair of holders 32b can be formed, for example, of a slender metal plate or steel section. The material of the pair of holders 32b is not particularly limited, and is preferably set to a material with heat resistance and corrosion resistance. The material of the pair of holders 32b can be set, for example, to stainless steel.

[0120] The support portion 33 is disposed within the chamber 10 and supports the workpiece 100. For example, the support portion 33 supports the workpiece 100 between the upper heating portion and the lower heating portion. Multiple support portions 33 may be provided. Multiple support portions 33 are disposed below the processing area 30a and below the processing area 30b. Multiple support portions 33 may be rod-shaped.

[0121] One end (the upper end) of the plurality of support portions 33 contacts the lower surface (back surface) of the workpiece 100. Therefore, one end of the plurality of support portions 33 is preferably hemispherical, for example. If one end of the plurality of support portions 33 is hemispherical, damage to the lower surface of the workpiece 100 can be suppressed. Furthermore, the contact area between the lower surface of the workpiece 100 and the plurality of support portions 33 can be reduced, thereby reducing heat transfer from the workpiece 100 to the plurality of support portions 33.

[0122] The workpiece 100 is heated by the heat energy obtained by radiation in a gas environment with a higher gas pressure that is further reduced in pressure. Therefore, the distance from the upper heating part to the upper surface of the workpiece 100 and the distance from the lower heating part to the lower surface of the workpiece 100 become the distances at which the heat energy obtained by radiation can reach the workpiece 100.

[0123] The other ends (lower ends) of the multiple support parts 33 can be fixed to, for example, multiple rod-shaped members or plate-shaped members installed between the pair of frames 31. In this case, the multiple support parts 33 are preferably detachably mounted on the rod-shaped members. This makes maintenance and other operations easier.

[0124] The number, arrangement, and intervals of the plurality of support portions 33 can be appropriately changed according to the size and rigidity (flexure) of the workpiece 100 .

[0125] The material of the plurality of support parts 33 is not particularly limited, but is preferably a material having heat resistance and corrosion resistance. For example, the material of the plurality of support parts 33 can be stainless steel.

[0126] The heat equalizing section 34 includes a plurality of upper heat equalizing plates 34a, a plurality of lower heat equalizing plates 34b, a plurality of side heat equalizing plates 34c, and a plurality of side heat equalizing plates 34d. The plurality of upper heat equalizing plates 34a, the plurality of lower heat equalizing plates 34b, the plurality of side heat equalizing plates 34c, and the plurality of side heat equalizing plates 34d are plate-shaped.

[0127] A plurality of upper heat spreaders 34a are arranged on the side of the lower heating portion (the side of the workpiece 100) in the upper heating portion. The plurality of upper heat spreaders 34a are arranged away from the plurality of heaters 32a. That is, a gap is provided between the upper surface of the plurality of upper heat spreaders 34a and the lower surface of the plurality of heaters 32a. The plurality of upper heat spreaders 34a are arranged in an array along the X direction. A gap is provided between the plurality of upper heat spreaders 34a. If a gap is provided, the dimensional difference caused by thermal expansion can be absorbed. Therefore, the upper heat spreaders 34a can be prevented from interfering with each other and deforming. In addition, as described above, the pressure in the space of the processing area 30a and the processing area 30b can be reduced via the gap.

[0128] A plurality of lower heat spreaders 34b are arranged on the upper heating portion side (the workpiece 100 side) in the lower heating portion. The plurality of lower heat spreaders 34b are arranged away from the plurality of heaters 32a. That is, a gap is provided between the lower surface of the plurality of lower heat spreaders 34b and the upper surface of the plurality of heaters 32a. The plurality of lower heat spreaders 34b are arranged in an array along the X direction. A gap is provided between the plurality of lower heat spreaders 34b. If a gap is provided, the dimensional difference caused by thermal expansion can be absorbed. Therefore, the deformation caused by interference between the lower heat spreaders 34b can be suppressed. In addition, the pressure in the space of the processing area 30a and the processing area 30b can be reduced via the gap.

[0129] Side vapor chambers 34c are disposed on either side of processing area 30a and processing area 30b in the X-direction. Side vapor chambers 34c can be disposed inside cover 36. As described above, gaps are provided between side vapor chambers 34c and upper vapor chamber 34a or lower vapor chamber 34b. These gaps can be used to reduce the pressure in processing area 30a or processing area 30b.

[0130] The side vapor chambers 34d are disposed on either side of the processing areas 30a and 30b in the Y direction. The side vapor chambers 34d disposed on the door 13 side can be spaced apart from the cover 36 on the door 13 side. The side vapor chambers 34d disposed on the lid 15 side can be disposed inside the cover 36. Furthermore, as described above, a gap is provided between the side vapor chambers 34d and the upper vapor chamber 34a or the lower vapor chamber 34b. This gap can be used to reduce the pressure in the processing areas 30a and 30b.

[0131] In this embodiment, the gaps between the upper and lower heat spreaders 34a and 34b are larger than the gaps between the upper and lower heat spreaders 34a and 34b and the side heat spreaders 34c and 34d, respectively. The reason for this will be described later.

[0132] As described above, the multiple heaters 32a are rod-shaped and arranged at predetermined intervals. When the heaters 32a are rod-shaped, heat is radiated radially from the central axis of the heater 32a. In this case, the shorter the distance between the central axis of the heater 32a and the heated portion, the higher the temperature of the heated portion. Therefore, when the workpiece 100 is held facing the multiple heaters 32a, the area of the workpiece 100 directly above or below the heater 32a has a higher temperature than the area of the workpiece 100 directly above or below the space between the multiple heaters 32a. In other words, if the workpiece 100 is directly heated using the multiple rod-shaped heaters 32a, the temperature of the heated workpiece 100 will be distributed in the surface.

[0133] If the temperature of the workpiece 100 varies within the surface, the quality of the formed organic film may be degraded. For example, bubbles may be generated in the portion with a higher temperature, or the composition of the organic film may change in the portion with a higher temperature.

[0134] The organic film forming apparatus 1 of this embodiment is provided with the aforementioned multiple upper vapor chambers 34a and multiple lower vapor chambers 34b. Therefore, heat radiated from the multiple heaters 32a is incident on the multiple upper vapor chambers 34a and multiple lower vapor chambers 34b, propagating in the planar direction within these vapor chambers while being radiated toward the workpiece 100. As a result, in-plane temperature distribution in the workpiece 100 is suppressed, thereby improving the quality of the formed organic film.

[0135] The multiple upper and lower vapor chambers 34a and 34b spread incident heat in a planar direction, so these vapor chambers are preferably made of a material with high thermal conductivity. For example, the multiple upper and lower vapor chambers 34a and 34b can be made of aluminum, copper, stainless steel, or the like. Furthermore, when using easily oxidized materials such as aluminum or copper, it is preferable to provide a layer containing a less oxidizable material on the surface.

[0136] A portion of the heat radiated from the multiple upper vapor chambers 34a and the multiple lower vapor chambers 34b is directed toward the sides of the processing area. Therefore, the side vapor chambers 34c and 34d described above are installed on the sides of the processing area. The heat incident on the side vapor chambers 34c and 34d propagates along the surface of the side vapor chambers 34c and 34d, while a portion of the heat is radiated toward the workpiece 100. This improves the heating efficiency of the workpiece 100.

[0137] The material of the side vapor chambers 34c and 34d can be the same as the material of the upper vapor chamber 34a and the lower vapor chamber 34b described above.

[0138] Furthermore, the above example illustrates a case where the plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b are arranged in the X direction, but at least one of the upper heat spreaders 34a and the lower heat spreaders 34b may be a single plate-shaped member.

[0139] Multiple vapor chamber support sections 35 are arranged in an array along the X-direction. These vapor chamber support sections 35 can be positioned directly below each other on the upper vapor chamber 34a in the X-direction. The vapor chamber support sections 35 can be secured to the pair of holders 32b using fastening members such as screws. The pair of vapor chamber support sections 35 detachably supports both ends of the upper vapor chamber 34a. Furthermore, the vapor chamber support sections 35 supporting the lower vapor chambers 34b can also have a similar structure.

[0140] If the pair of vapor chamber support members 35 support the upper vapor chamber 34a and the lower vapor chamber 34b, even if the upper vapor chamber 34a and the lower vapor chamber 34b thermally expand, interference between the upper vapor chamber 34a and the lower vapor chamber 34b can be suppressed. Consequently, deformation of the upper vapor chamber 34a and the lower vapor chamber 34b can be suppressed.

[0141] The cover 36 is plate-shaped and covers the upper surface, the bottom surface, and the side surfaces of the frame 31. That is, the inside of the frame 31 is covered by the cover 36. However, the cover 36 on the door 13 side may be provided on the door 13, for example.

[0142] The cover 36 surrounds the processing areas 30 a and 30 b , but has gaps provided at the boundary between the upper surface and the side surface of the frame 31 , the boundary between the side surface and the bottom surface of the frame 31 , and near the door 13 .

[0143] Furthermore, the covers 36 provided on the top and bottom surfaces of the frame 31 are divided into multiple sections. Furthermore, gaps are provided between the sections of the covers 36. That is, the interior space of the processing unit 30 (processing areas 30a and 30b) communicates with the interior space of the chamber 10 via these gaps. Therefore, the pressure in the processing areas 30a and 30b can be made equal to the pressure in the space between the inner wall of the chamber 10 and the covers 36. The covers 36 can be made of, for example, stainless steel.

[0144] The cooling unit 40 supplies cooling gas to the area where the heating unit 32 is located. For example, the cooling unit 40 uses the cooling gas to cool the heat-sinking unit 34 surrounding the processing areas 30a and 30b, thereby indirectly cooling the high-temperature workpiece 100 through the cooled heat-sinking unit 34. Alternatively, the cooling unit 40 may directly cool the high-temperature workpiece 100 by supplying cooling gas to the workpiece 100.

[0145] That is, the cooling unit 40 can indirectly and directly cool the workpiece 100. In addition, the cooling unit 40 can function as a cleaning unit 50 for supplying a cleaning gas G to the processing areas 30a and 30b in a cleaning step to be described later.

[0146] The cooling unit 40 includes, for example, a first gas supply path 40 a and a second gas supply path 40 b .

[0147] First, the first gas supply path 40 a will be described. The first gas supply path 40 a includes a nozzle 41 , a gas source 42 , a gas control unit 43 , and a switching valve 54 .

[0148] like Figure 1 As shown, the nozzle 41 can be connected to the space where multiple heaters 32a are installed. The nozzle 41, for example, passes through the cover 36 and can be installed on the side heat plate 34c or the frame 31. The nozzle 41 can be arranged in multiple positions in the Y direction (see Figure 3 ). In addition, the number or arrangement of the nozzles 41 can be changed as appropriate. For example, in the X direction, the nozzles 41 can be set on one side of the processing unit 30, or the nozzles 41 can be set on both sides of the processing unit 30.

[0149] The gas source 42 supplies cooling gas to the nozzle 41. The gas source 42 can be, for example, a high-pressure gas cylinder, factory piping, etc. In addition, a plurality of gas sources 42 may be provided.

[0150] The cooling gas is preferably a gas that is less reactive with the heated workpiece 100. Examples of the cooling gas include nitrogen and a rare gas. Examples of rare gases include argon and helium. Using nitrogen as the cooling gas can reduce operating costs. Since helium has a high thermal conductivity, using helium as the cooling gas can shorten the cooling time.

[0151] The temperature of the cooling gas can be set to, for example, room temperature (eg, 25° C.) or lower.

[0152] The gas control unit 43 is provided between the nozzle 41 and the gas source 42. The gas control unit 43 can control, for example, the supply and stop of the cooling gas, or at least one of the flow rate and flow rate of the cooling gas.

[0153] The timing of supplying the cooling gas may be set after the completion of the heating treatment of the workpiece 100. The completion of the heating treatment may be set after the temperature at which the organic film is formed is maintained for a predetermined time.

[0154] The switching valve 54 is a valve for switching between the first gas supply path 40 a and the second gas supply path 40 b . The switching valve 54 is provided between the nozzle 41 and the gas control unit 43 and outside the chamber 10 .

[0155] Next, the second gas supply path 40b will be described. The second gas supply path 40b is provided to clean the interior of the chamber 10 during the cleaning process described later. The second gas supply path 40b discharges foreign matter such as particles within the chamber 10 to the exterior of the chamber 10 via the opening 11a of the chamber 10. For example, the second gas supply path 40b supplies the cleaning gas G into the processing areas 30a and 30b, thereby forming a gas flow toward the opening 11a of the chamber 10.

[0156] In this embodiment, the second gas supply path 40 b also functions as the “cleaning unit” of the present invention.

[0157] The cleaning unit 50 includes, for example, a nozzle 41, a gas source 52, a gas control unit 53, and a switching valve 54. In this case, the cleaning unit 50 is connected to the first gas supply path 40a via the switching valve 54.

[0158] The gas source 52 supplies the cleaning gas G to the plurality of nozzles 41. The gas source 52 can be, for example, a high-pressure gas cylinder, factory piping, etc. In addition, a plurality of gas sources 52 may be provided.

[0159] The cleaning gas G is preferably a gas that is less likely to react with the inner wall of the heated chamber 10 or the components within the chamber 10. The cleaning gas G can be, for example, clean dry air, nitrogen, carbon dioxide (CO2), or a rare gas. Examples of rare gases include argon and helium. In this case, using clean dry air or nitrogen as the cleaning gas G can reduce operating costs.

[0160] The cleaning gas G may be the same as or different from the cooling gas described above. When the cleaning gas G is the same as the cooling gas, either the gas source 52 or the gas source 42 may be provided.

[0161] The temperature of the cleaning gas G can be set to, for example, room temperature (eg, 25° C.).

[0162] The gas control unit 53 is disposed between the switching valve 54 and the gas source 52. The gas control unit 53 can, for example, control the supply and stoppage of the cleaning gas G. Furthermore, the gas control unit 53 can also, for example, control at least one of the flow rate and flow rate of the cleaning gas G. The flow rate or flow rate of the cleaning gas G can be appropriately varied depending on the size of the chamber 10 or the shape, number, and arrangement of the nozzles 41. The flow rate or flow rate of the cleaning gas G can be appropriately determined, for example, through experiments or simulations.

[0163] Next, the operation of the organic film forming apparatus 1 will be exemplified.

[0164] Figure 21 is a diagram for illustrating a processing step of the workpiece 100 .

[0165] like Figure 2 As shown, the organic film forming process includes a workpiece carrying-in process, a temperature raising process, a heat treatment process, a cooling process, a workpiece carrying-out process, and a cleaning process.

[0166] First, in the workpiece loading process, the door 13 is moved away from the flange 11, and the workpiece 100 is loaded into the interior of the chamber 10. After the workpiece 100 is loaded into the interior of the chamber 10, the exhaust unit 20 reduces the pressure in the interior of the chamber 10 to a predetermined pressure.

[0167] After the internal space of the chamber 10 is decompressed to a predetermined pressure, power is applied to the heater 32a. Figure 2 As shown, the temperature of the workpiece 100 rises. The process of raising the temperature of the workpiece 100 is called a heating process. In this embodiment, the heating process is performed twice (heating process (1), heating process (2)). In addition, the prescribed pressure can be a pressure at which the polyamic acid in the solution does not react with the oxygen remaining in the internal space of the chamber 10 and is oxidized. The prescribed pressure can be set to, for example, 1×10 -2 That is, exhaustion by the second exhaust unit 22 is not necessarily required, and the heating unit 32 may start heating the workpiece 100 when the pressure in the internal space of the chamber 10 reaches a range of 10 Pa to 100 Pa after exhaustion by the first exhaust unit 21 is started.

[0168] After the temperature raising step, a heat treatment step is performed. The heat treatment step is a step of maintaining a predetermined temperature for a predetermined time. In this embodiment, a heat treatment step (1) and a heat treatment step (2) can be provided.

[0169] The heat treatment step (1) may be, for example, a step of heating the workpiece 100 at a first temperature for a predetermined time to discharge water and gas contained in the solution. The first temperature may be, for example, 100°C to 200°C.

[0170] By performing the heat treatment step (1), moisture or gas contained in the solution can be prevented from being included in the organic film as a finished product. In addition, depending on the composition of the solution, the first heat treatment step can be performed multiple times at different temperatures, or the first heat treatment step can be omitted.

[0171] The heat treatment step (2) is a step in which the substrate (workpiece 100) coated with the solution is maintained at a predetermined pressure and temperature for a predetermined time to form an organic film. The second temperature can be set to a temperature that causes imidization, for example, 300°C or higher. In this embodiment, the heat treatment step is performed at 400°C to 600°C to obtain an organic film with a high molecular chain filling rate.

[0172] The cooling process is a process for lowering the temperature of the workpiece 100 on which the organic film is formed. In this embodiment, it is performed after the heating treatment process (2). The workpiece 100 is cooled to a temperature at which it can be carried out. For example, if the temperature of the workpiece 100 to be carried out is room temperature, it is easy to carry out the workpiece 100. However, in the organic film forming apparatus 1, the workpiece 100 is continuously subjected to heat treatment. Therefore, if the temperature of the workpiece 100 is set to room temperature each time the workpiece 100 is carried out, the time for heating the next workpiece 100 becomes longer. That is, there is a risk of decreased productivity. The temperature of the workpiece 100 to be carried out can be set to, for example, 50°C to 90°C. This carrying-out temperature is set to the third temperature.

[0173] The controller 60 closes the valve 25 of the first exhaust portion 21. Then, the controller 60 controls the cooling portion 40 to supply cooling gas to the space where the plurality of heaters 32a are installed, thereby indirectly and directly lowering the temperature of the workpiece 100.

[0174] Therefore, the gaps between the upper and lower vapor chambers 34a and 34b are larger than the gaps between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34c, and between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34d. This increases the amount of cooling gas supplied to the workpiece 100 by the cooling unit 40. Furthermore, the amount of cooling gas exhausted from the processing areas 30a and 30b can be reduced. Consequently, the workpiece 100 can be efficiently cooled.

[0175] Furthermore, immediately after the organic film is formed, the internal pressure of the chamber 10 is lower than the atmospheric pressure, that is, the amount of gas inside the chamber 10 is low. Therefore, even when cooling gas is supplied into the chamber 10, the dispersion of components contained in the sublimates that have solidified due to the supplied cooling gas can be suppressed.

[0176] When the output of a vacuum gauge (not shown) for detecting the internal pressure of chamber 10 reaches the same pressure as atmospheric pressure, controller 60 closes valve 25 of second exhaust portion 22 and opens valve 25 of third exhaust portion 23 to continuously exhaust the cooling gas.

[0177] The controller 60 may also control the switching valve 54 to supply the cleaning gas G to the space where the plurality of heaters 32a are installed after the temperature detected by the thermometer (not shown) falls below 200°C. When the cleaning gas G is clean dry air (CDA) and the cooling gas is N2 or a rare gas, the amount of N2 or rare gas used can be reduced.

[0178] In the workpiece unloading process, after the temperature of the workpiece 100 with the organic film formed thereon reaches the third temperature, the supply of the cooling gas or the cleaning gas G introduced into the chamber 10 is stopped. Then, the door 13 is moved away from the flange 11 to unload the workpiece 100.

[0179] As described above, when the sublimate comes into contact with a member having a lower temperature than the heated workpiece 100 , components contained in the sublimate may become solid and adhere to the member.

[0180] However, since upper and lower vapor chambers 34a and 34b are heated, components contained in the sublimates are prevented from adhering to upper and lower vapor chambers 34a and 34b. Furthermore, as described above, since airflow is generated within chamber 10 toward the bottom surface (or ceiling surface) of chamber 10, where exhaust port 17 or exhaust port 18 is provided, the sublimates are exhausted from chamber 10 along with the airflow.

[0181] As described above, since the sublimates are discharged outside the chamber 10, it is considered that the components contained in the sublimates can be suppressed from adhering to the workpiece 100. Therefore, conventionally, after the workpiece 100 is unloaded, the next workpiece 100 is loaded into the chamber 10, and the above process is repeated.

[0182] However, it was discovered that a small amount of sublimates actually adhered to the inner wall of chamber 10. As the organic film formation process was repeated, a small amount of sublimates also repeatedly adhered to the inner wall of chamber 10. As a result, the solids generated from the sublimates grew larger. Once the solids generated from the sublimates grew to a certain size, they flake off from the inner wall of chamber 10. The solids flake off from the inner wall of chamber 10 could potentially become foreign matter such as particles and adhere to the surface of workpiece 100.

[0183] Typically, an anti-sticking plate is installed to prevent sublimates from adhering to the inner walls of the chamber, and the plate is replaced regularly. However, this method is complex and requires complicated replacement work. Therefore, the present inventors have conducted research on cleaning methods to remove solids generated from sublimates from the inner walls of the chamber 10.

[0184] Next, the function of the cleaning unit 50 and the method for cleaning the organic film forming apparatus according to the present embodiment will be described.

[0185] Figure 3It is a schematic cross-sectional view for illustrating the function of the cleaning unit 50 .

[0186] In addition, in order to avoid complication, the description of components and the like provided inside the chamber 10 is omitted.

[0187] like Figure 3 As shown, when the opening 11a of the chamber 10 is opened (when the door 13 is away from the flange 11), the cleaning unit 50 supplies the cleaning gas G into the interior of the chamber 10. For example, when the opening 11a of the chamber 10 is opened, the controller 60 controls the gas control unit 53 to flow the cleaning gas G from the nozzle 41 into the heating unit 32. The cleaning gas G is supplied from the heating unit 32 into the interior of the chamber 10.

[0188] As described above, the gaps between the upper vapor chambers 34a and the lower vapor chambers 34b are larger than the gaps between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34c, and between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34d. Therefore, when the cleaning unit 50 supplies the cleaning gas G, the amount of cleaning gas G supplied to the processing areas 30a and 30b can be increased.

[0189] The clean gas G supplied to the interior of the chamber 10 is discharged to the outside of the chamber 10 through the opening 11a of the chamber 10. At this time, foreign matter such as sublimates or particles inside the chamber 10 is discharged to the outside of the chamber 10 along with the airflow of the clean gas G. In addition, the heater 32a, the holder 32b, the heat spreader 34 and the heat spreader support 35 rub due to thermal expansion. Due to the friction of these components, tiny metal pieces are generated. The metal pieces are also included in the foreign matter. In addition, if an airflow is formed inside the chamber 10, the components (solids) of the sublimates attached to the inner wall of the chamber 10 or the elements arranged inside the chamber 10 can be peeled off and discharged to the outside of the chamber 10.

[0190] In this case, the cleaning gas G may be supplied into the chamber 10 periodically or as needed. That is, a cleaning process may be provided separately from the process of processing the workpiece 100 , and the cleaning gas G may be supplied into the chamber 10 during the cleaning process.

[0191] Furthermore, the cleaning gas G may be supplied into the chamber 10 during the period between unloading a processed workpiece 100 from the chamber 10 and loading a next workpiece 100 to be processed into the chamber 10. That is, even when a series of steps for processing the workpiece 100 are being performed, the cleaning unit 50 may be used to clean the chamber 10 when no workpiece 100 is present.

[0192] If the cleaning unit 50 is provided, foreign matter such as sublimates and particles within the chamber 10 can be discharged to the outside of the chamber 10 along with the flow of the cleaning gas G. Furthermore, components (solids) of the sublimates adhering to the inner wall of the chamber 10 can be peeled off and discharged to the outside of the chamber 10.

[0193] That is, if the cleaning unit 50 is provided, foreign matter inside the chamber 10 can be sufficiently removed.

[0194] Next, the effects of the cleaning unit 50 will be further described.

[0195] Figure 4 This is a graph showing a combination of the discharge of particles by the exhaust unit 20 and the discharge of particles by the cleaning unit 50 .

[0196] When exhausting the particles using the exhaust unit 20 , the following operation was repeated 10 times: depressurizing the interior of the chamber 10 and returning the depressurized interior of the chamber 10 to atmospheric pressure.

[0197] When the particles are discharged by the cleaning unit 50 , the cleaning gas G is simultaneously supplied from the plurality of nozzles 41 after the particles are discharged by the exhaust unit 20 . That is, the particles are discharged by the exhaust unit 20 before the particles are discharged by the cleaning unit 50 .

[0198] according to Figure 4 It is understood that if the particles can be discharged by the exhaust unit 20 and the particles can be discharged by the cleaning unit 50 , particles of various sizes can be discharged.

[0199] Figure 5 This is a graph showing a case where only the particles are discharged by the cleaning unit 50 .

[0200] When the particles are discharged by the cleaning unit 50 , the cleaning gas G is supplied simultaneously from the plurality of nozzles 41 .

[0201] according to Figure 5 It can be seen that even if only the particles are discharged by the cleaning unit 50 , particles of various sizes can be discharged.

[0202] Here, proceed Figure 4 and Figure 5 Comparison. Figure 4 and Figure 5Comparison shows that there is little difference in the number of particles discharged immediately after the cleaning unit 50 begins discharging particles, regardless of whether or not the exhaust unit 20 is pre-emptively performed. This means that it is difficult to fully remove particles using the exhaust unit 20. In other words, if the chamber 10 is sealed and cleaning is performed by sequentially exhausting the interior of the chamber 10 and supplying gas to the interior of the chamber 10, while particles and other foreign matter can be removed to some extent, they cannot be fully removed.

[0203] On the other hand, if the cleaning unit 50 can be used for cleaning, Figure 5 It can be seen that foreign matter inside the chamber 10 can be sufficiently removed.

[0204] Here, in Figure 4 and Figure 5 The detection amount of particles of various sizes is compared in the range of 3 minutes to 5 minutes from the start of particle discharge by the cleaning unit 50. Figure 4 and Figure 5 The comparison shows that the time from the start of particle discharge by the cleaning unit 50 is between 3 minutes and 5 minutes. Figure 4 The amount of particles detected is smaller. Therefore, the time for discharging particles by the cleaning section 50 can be shortened. That is, it is more preferable to discharge particles by the exhaust section 20 and discharge particles by the cleaning section 50. However, if the particles are discharged by the exhaust section 20 while the workpiece 100 is in the chamber 10, there is a risk that the particles will adhere to the surface of the workpiece 100. It is preferable to perform the discharge of particles by the exhaust section 20 and the discharge of particles by the cleaning section 50 while the organic film forming apparatus 1 is in a standby state.

[0205] Figure 6 This is also a graph showing the case where only the particles are discharged by the cleaning unit 50 .

[0206] However, in Figure 6 In this case, the cleaning gas G is supplied sequentially from the plurality of nozzles 41. For example, the cleaning gas G is supplied from any of the plurality of nozzles 41 for a predetermined period of time, and after the supply of the cleaning gas G from the plurality of nozzles 41 is stopped, the cleaning gas G is supplied from the other plurality of nozzles 41 for a predetermined period of time. In this case, the cleaning gas G may be supplied sequentially from the plurality of nozzles 41 arranged above, the cleaning gas G may be supplied sequentially from the plurality of nozzles 41 arranged below, or the cleaning gas G may be supplied sequentially from any of the plurality of nozzles 41. Furthermore, a single nozzle 41 may be used to supply the cleaning gas G.

[0207] according to Figure 6It can be seen that the amount of detected particles decreased during the 3-minute period from the start of particle discharge by the cleaning unit 50. However, the amount of detected particles increased after 4 minutes from the start of particle discharge by the cleaning unit 50. This is believed to be due to the change in the flow of the cleaning gas G within the chamber 10 by switching from the plurality of nozzles 41 to another plurality of nozzles 41. It is believed that the change in the flow of the cleaning gas G within the chamber 10 caused particles that could not be discharged by the previous flow of the cleaning gas G to be discharged to the outside of the chamber 10.

[0208] Therefore, according to Figure 5 and Figure 6 As can be seen from the comparison, if the cleaning gas G is supplied sequentially from the plurality of nozzles 41 to the other plurality of nozzles 41, the number of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

[0209] Figure 7 This is a schematic cross-sectional view of a cleaning unit 50 a for illustrating another embodiment.

[0210] Similar to the cleaning unit 50 described above, the cleaning unit 50 a includes, for example, a plurality of nozzles 41 , a gas source 52 , and a gas control unit 53 .

[0211] In addition, if Figure 6 As shown, the cleaning portion 50 a may further include a detection portion 56 .

[0212] The detection unit 56 may be provided at a position facing the opening 11a of the chamber 10. The detection unit 56 detects foreign matter such as particles contained in the cleaning gas G exhausted from the opening 11a of the chamber 10. The detection unit 56 may be, for example, a particle counter.

[0213] If the detector 56 is provided, the end point of cleaning can be detected. For example, when the number of foreign matter detected by the detector 56 becomes less than a predetermined value, the controller 60 can control the gas control unit 53 to stop supplying the cleaning gas G, thereby ending the cleaning operation.

[0214] If the end point of cleaning can be detected, the consumption of the cleaning gas G can be reduced compared to the case where cleaning is terminated by time management, etc. In addition, foreign matter inside the chamber 10 can be removed more appropriately.

[0215] Figure 8 This is a schematic cross-sectional view of a cleaning portion 50b for illustrating another embodiment.

[0216] Similar to the cleaning unit 50 described above, the cleaning unit 50 b includes, for example, a plurality of nozzles 41 , a gas source 52 , and a gas control unit 53 .

[0217] In addition, if Figure 8 As shown, the cleaning unit 50 b may further include a detection unit 56 and a frame 55 .

[0218] The housing 55 has an airtight structure and can be installed at a position facing the opening 11a of the chamber 10. The detection unit 56 can be installed inside the housing 55. The housing 55 can be set as a mini-environment (local clean environment), for example.

[0219] As described above, the clean gas G exhausted from the chamber 10 contains foreign matter such as particles. Consequently, the foreign matter exhausted from the chamber 10 may diffuse into the atmosphere in which the organic film forming apparatus 1 is installed. If the diffused foreign matter such as particles reaches devices or components surrounding the organic film forming apparatus 1, there is a risk of contamination or malfunction. Furthermore, it is sometimes undesirable for workers to inhale foreign matter such as particles or the clean gas G.

[0220] If the frame 55 is provided, it is possible to suppress the diffusion of foreign matter or the cleaning gas G exhausted from the chamber 10 into the gas environment in which the organic film forming apparatus 1 is installed.

[0221] Figure 9 It is a schematic perspective view for illustrating an organic film forming apparatus 1 a according to another embodiment.

[0222] Similar to the cleaning unit 50 described above, the cleaning unit 150 includes, for example, a plurality of nozzles 41 , a gas source 52 , and a gas control unit 53 .

[0223] In addition, if Figure 9 As shown, the cleaning portion 150 may further include another cleaning portion 50c.

[0224] The cleaning unit 50 c includes a nozzle 51 , a gas source 52 , and a gas control unit 53 .

[0225] like Figure 9 As shown, the nozzle 51 can be connected to the side of the chamber 10. A plurality of nozzles 51 can be provided on the side of the chamber 10. The nozzle 51 of this embodiment is in the shape of a tube with a closed front end. The closed front end of the nozzle 51 extends to the side of the chamber 10 facing the side of the chamber 10 where the nozzle 51 is provided. A plurality of nozzle holes 51a are provided on the side of the nozzle 51. In addition, the number or arrangement of the nozzles 51 can be changed as appropriate. For example, a plurality of nozzles 51 can be arranged along the Y direction on the side of the chamber 10. Nozzles 51 can also be provided on two opposing side surfaces of the chamber 10. Nozzles 51 can also be provided that pass through the two opposing side surfaces of the chamber 10. A plurality of nozzles 51 can also be arranged along the X direction on the cover 15.

[0226] Figure 101 is a schematic cross-sectional view of a cleaning unit 150 for illustrating another embodiment.

[0227] like Figure 10 As shown, cleaning gas G can be introduced into chamber 10 from nozzle hole 51a of nozzle 51. Providing cleaning portion 50c strengthens the flow of cleaning gas G formed by nozzle 41. Alternatively, a flow different from the flow of cleaning gas G formed by nozzle 41 can be generated. Consequently, particles that cannot be expelled by the flow of cleaning gas G formed by nozzle 41 are expelled to the outside of chamber 10. Consequently, the number of expelled particles can be significantly increased. This means that foreign matter within chamber 10 can be removed more effectively.

[0228] Furthermore, during the cooling process, cooling gas can also be supplied from the cleaning section 50c into the chamber. If the cooling gas supply is set to occur immediately after the organic film is formed, or while the internal pressure of the chamber 10 is being restored to atmospheric pressure, the cooling time can overlap with the time it takes to return to atmospheric pressure. In other words, a substantial reduction in cooling time can be achieved. Furthermore, sublimates adhere to the inner wall of the chamber 10. Therefore, to prevent sublimates from peeling off the inner wall of the chamber 10 and flowing into the interior of the processing areas 30a and 30b, the amount of cooling gas supplied from the cleaning section 50c is preferably less than the amount of cooling gas supplied from the cooling section 40.

[0229] In addition, in this embodiment, a plurality of nozzle holes are provided in one nozzle 51, but the present invention is not limited thereto. For example, one nozzle hole may be formed in one nozzle 51. In this case, the nozzle 51 is cylindrical with a flange provided at the front end through the opening. Moreover, the nozzle 51 is airtightly connected to the hole on the side of the chamber 10. In other words, the hole on the side of the chamber 10 can function as the nozzle hole 51a. Alternatively, when the nozzle 51 is airtightly connected to the hole provided in the cover 15, the hole provided in the cover 15 can also function as the nozzle hole 51a.

[0230] Figure 11 This is a schematic perspective view for illustrating an organic film forming apparatus 1 b according to another embodiment.

[0231] Similar to the cleaning unit 150 described above, the cleaning unit 250 includes, for example, a plurality of nozzles 41 , a gas source 52 , a cleaning unit 50 c , and a gas control unit 53 .

[0232] In addition, if Figure 11 As shown, the cleaning section 250 may further include another cooling section 140 .

[0233] The cooling unit 140 supplies cooling gas to the workpiece 100 located inside the processing area 30a or the processing area 30b. In other words, the cooling unit 140 directly cools the workpiece 100 at a high temperature.

[0234] The cooling unit 140 is different from the cooling unit 40 in that the cooling unit 140 includes a nozzle 141 instead of the nozzle 41 .

[0235] At least one nozzle 141 may be provided inside the processing area 30a or the processing area 30b (see Figure 12 ). The nozzle 141, for example, passes through the cover 15 and the hood 36, and can be installed on the side heat sink 34d or the frame 31. In this embodiment, the nozzle 141 is installed at a position where cooling gas can be supplied to the back of the workpiece 100. In addition, multiple nozzles 141 can be provided in the X direction. Alternatively, the nozzle 141 can be provided in a cylindrical shape with a closed front end. Moreover, multiple holes can be provided on the side of the nozzle 141, and it can be inserted from the side of the chamber 10.

[0236] In the cooling process, cooling gas is ejected from the nozzle 141 in parallel with the workpiece 100. Figure 12 In the cooling process, the door 13 is in an open state, but in the cooling process described below, the door 13 is in a closed state. The cooling gas is supplied from the nozzle 141 in a direction substantially parallel to the back side of the workpiece 100 (i.e., the surface supported by the support portion 33). As a result, the space between the workpiece 100 and the support portion 33 is filled with cooling gas, so that the workpiece 100 can be directly cooled. In addition, the cooling gas supplied from the nozzle 141 and passed through the back side of the workpiece 100 is discharged to the outside of the chamber 10 from an exhaust port not shown in the figure. A plurality of exhaust ports (for example, four) are provided in the ceiling portion of the chamber 10. When cooling gas is supplied to the chamber 10 in the cooling process, the heat in the chamber 10 moves upward in the chamber 10, so that the heat can be efficiently discharged through the exhaust port provided in the ceiling portion. Furthermore, by sequentially supplying cooling gas from the nozzle 141 located on the lower side in the chamber 10 among the plurality of nozzles 141, an airflow toward the ceiling side of the chamber 10 is formed in the chamber 10. Thus, the particles in the chamber 10 can be efficiently discharged from the discharge port.

[0237] Here, when the cooling process begins, cooling gas is supplied, gradually bringing the internal pressure of chamber 10, which is lower than atmospheric pressure, closer to atmospheric pressure. If the internal pressure of chamber 10 suddenly approaches atmospheric pressure, the workpiece 100 supported by support 33 could move due to the pressure fluctuations, causing friction with support 33 and generating particles. Therefore, after the cooling process begins, cooling gas is supplied only from nozzle 41 until the internal pressure of chamber 10 reaches a predetermined pressure, indirectly cooling the workpiece 100. The cooling gas supplied from nozzle 41 is not supplied directly to the workpiece 100, but rather to the heat equalizing section 34. This allows the internal pressure of chamber 10 to gradually increase while avoiding sudden pressure fluctuations near the workpiece 100. Subsequently, after the internal pressure of chamber 10 reaches the predetermined pressure, cooling gas is also supplied from nozzle 141, directly cooling the workpiece 100. The predetermined pressure is the pressure at which the workpiece 100 does not move due to pressure fluctuations caused by the supply of cooling gas from nozzle 141, and is determined in advance through experiments, etc. The cooling gas is supplied from the nozzle 141 after the internal pressure of the chamber 10 has increased to a certain extent, so that the workpiece 100 does not move due to pressure fluctuations. This effectively suppresses the generation of particles due to friction between the workpiece 100 and the support portion 33.

[0238] Alternatively, multiple nozzles (not shown) may be provided at the end portion of the opening 11a of the chamber 10 to blow air from the bottom surface of the chamber 10 toward the ceiling. This allows for an airflow from the bottom surface of the chamber 10 toward the ceiling, effectively transporting particles blown away by the nozzles 141 and 41 to the exhaust port and discharging them. Furthermore, the airflow formed by the nozzles (not shown) also functions as an air curtain to prevent particles from entering the chamber 10 from outside when the door 13 is open.

[0239] Furthermore, a plurality of nozzles (not shown) may be provided to blow air from the ceiling to the bottom of the chamber 10. Furthermore, when used as an air curtain (when the door 13 is open), airflow from the ceiling to the bottom of the chamber 10 may be formed. In this case, an air curtain can be formed in which air flows in the same direction as the downflow within the clean room in which the organic film forming apparatus 1 is installed, thereby more effectively preventing particles from entering the chamber 10.

[0240] In addition, the unillustrated nozzle that blows air from the bottom surface of the chamber 10 to the ceiling can be set not only on the opening 11a side, but also on the cover 15 side. The cooling gas ejected from the cooling nozzle 141 enters the door 13 side through the back of the workpiece 100 after being ejected, and the flow rate gradually slows down. The cooling gas collides with the door 13, and when it collides with the cover 15 side, the flow rate of the cooling gas becomes quite slow, and the cooling gas tends to be retained on the wall surface on the cover 15 side. As a result, particles are attached to the wall surface on the cover 15 side, and the particles attached to the wall surface on the cover 15 side are attached to the workpiece to be processed next. By providing a nozzle that blows air from the bottom surface of the chamber 10 to the ceiling along the wall surface on the cover 15 side, the particles attached to the wall surface can be efficiently discharged from the exhaust port.

[0241] When cooling the workpiece 100 indirectly or directly, cooling gas is supplied from the cooling unit 40 and the cooling unit 140 during the cooling process. That is, the workpiece 100 can be directly cooled using the nozzle 141 of the cooling unit 140. This can substantially shorten the cooling time.

[0242] Figure 12 2 is a schematic cross-sectional view of a cleaning unit 250 for illustrating another embodiment.

[0243] By providing the cooling unit 140, the cleaning gas G can also be supplied from the nozzle 141 into the interiors of the processing areas 30a and 30b. This strengthens the flow of the cleaning gas G formed by the nozzle 41. Consequently, particles that cannot be expelled by the flow of the cleaning gas G formed by the nozzle 41 are expelled to the exterior of the chamber 10. Consequently, the number of expelled particles can be significantly increased. This means that foreign matter within the chamber 10 can be more effectively removed.

[0244] As described above, the cleaning method of the organic film forming apparatus of this embodiment is a cleaning method of the organic film forming apparatus having the chamber 10 having the opening 11 a for loading and unloading the workpiece 100 and capable of maintaining a gas environment with a relatively high pressure that is further reduced in pressure.

[0245] In the cleaning method of the organic film forming apparatus of this embodiment, when the opening 11 a of the chamber 10 is opened, a flow of the cleaning gas G is formed inside the chamber 10 toward the opening 11 a of the chamber 10 .

[0246] Furthermore, the cleaning gas G is sequentially supplied from the plurality of nozzles 41 , thereby forming a flow of the cleaning gas G.

[0247] Furthermore, when the amount of foreign matter contained in the cleaning gas G exhausted from the opening 11 a of the chamber 10 is equal to or less than a predetermined value, the flow of the cleaning gas G is stopped.

[0248] When the flow of the cleaning gas G toward the opening 11 a of the chamber 10 is formed, the workpiece 100 is not supported inside the chamber 10 .

[0249] Furthermore, the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the multiple nozzles 41 may be strengthened by sequentially supplying the cleaning gas G from the multiple nozzles 51, the multiple nozzles 141, or both. Alternatively, a flow of the cleaning gas G different from the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the multiple nozzles 41 may be formed by sequentially supplying the cleaning gas G from the multiple nozzles 51, the multiple nozzles 141, or both.

[0250] Although the embodiments have been described above by way of example, the present invention is not limited to these descriptions.

[0251] Any embodiment obtained by appropriately adding design changes to the above-described embodiment by those skilled in the art is also included in the scope of the present invention as long as it has the characteristics of the present invention.

[0252] For example, the shape, size, arrangement, etc. of the organic film forming apparatus 1 are not limited to those exemplified, and can be modified as appropriate.

[0253] Furthermore, the elements included in the above-described embodiments can be combined as much as possible, and embodiments obtained by combining these elements are also included in the scope of the present invention as long as they have the characteristics of the present invention.

[0254] For example, during the cleaning process, not only the opening 11a of the chamber 10 but also the third exhaust port 23 may be opened. This allows the cleaning gas G to be exhausted from the third exhaust port as well, thereby more effectively removing foreign matter within the chamber 10.

Claims

1. An organic film forming device comprising: The chamber has an opening for loading or unloading workpieces and can maintain a gas environment with a relatively high pressure that is further reduced; a door capable of opening and closing the opening of the chamber; an exhaust portion capable of exhausting the interior of the chamber; a supporting portion, disposed inside the chamber and capable of supporting the workpiece; a heating portion, disposed inside the chamber and capable of heating the workpiece; at least one nozzle disposed inside the chamber and capable of supplying a cleaning gas to an opening of the chamber; a gas control unit connected to the nozzle and capable of controlling the supply and stop of the cleaning gas; as well as a controller capable of controlling the gas control unit, When the opening of the chamber is opened, the controller controls the gas control unit to flow the cleaning gas from the nozzle toward the opening of the chamber.

2. The organic film forming apparatus according to claim 1, wherein The nozzle is provided with a plurality of The cleaning gas is sequentially supplied from the plurality of nozzles.

3. The organic film forming apparatus according to claim 1 , further comprising: a cooling portion for supplying cooling gas to the interior of the heating portion; a first cleaning portion connected to the nozzle; a switching valve, disposed between the nozzle and the cleaning portion; as well as a controller capable of controlling the switching valve, The cooling unit is connected to the switching valve. The controller can select whether to supply the cooling gas or the cleaning gas from the nozzle into the interior of the heating unit by controlling the switching valve.

4. The organic film forming apparatus according to claim 3, further comprising: at least one second nozzle, disposed on a side of the chamber and capable of supplying a cleaning gas into the chamber; as well as A second cleaning portion is connected to the second nozzle, The controller can select to supply the cleaning gas from the first nozzle or the second nozzle or both.

5. The organic film forming apparatus according to claim 4, further comprising a detection unit configured to detect foreign matter contained in the cleaning gas exhausted from the opening of the chamber. When the number of the foreign matter detected by the detection unit becomes equal to or smaller than a predetermined value, the controller controls the gas control unit to stop supplying the cleaning gas. 6 . The organic film forming apparatus according to claim 1 , further comprising a frame having an airtight structure and provided at a position facing the opening of the chamber.

7. A method for cleaning an organic film forming apparatus, comprising: a chamber having an opening for loading and unloading a workpiece, the chamber being capable of maintaining a gaseous environment at a relatively high pressure that is further reduced in pressure; the workpiece being heated in the chamber by a heating unit; and wherein: When the opening of the chamber is opened, a cleaning gas is supplied from at least one nozzle toward the opening of the chamber, thereby forming a flow of the cleaning gas toward the opening of the chamber inside the chamber.

8. The method for cleaning an organic film forming apparatus according to claim 7, wherein: The cleaning gas is sequentially supplied from a plurality of nozzles to form a flow of the cleaning gas.

9. The method for cleaning an organic film forming apparatus according to claim 8, wherein: When the amount of foreign matter contained in the cleaning gas exhausted from the opening of the chamber becomes equal to or less than a predetermined value, the flow of the cleaning gas is stopped.

10. The method for cleaning an organic film forming apparatus according to any one of claims 7 to 9, wherein: When the flow of the cleaning gas toward the opening of the chamber is formed, the workpiece is not supported inside the chamber.

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