Positive photoresist composition and cured film and their synthesis method

Abstract

This invention relates to a positive photoresist composition and a cured film, and a method for synthesizing the same. The composition includes an organic solvent and a solute dissolved in the organic solvent. The solute comprises a copolymer of acrylates containing side-epoxy groups and terminal carboxyl groups, a diazonaphthoquinone compound, and a surfactant. The copolymer of acrylates containing side-epoxy groups and terminal carboxyl groups is polymerized from glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, glycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, and one or more monomers that cannot contain unsaturated carboxylic acid monomers. The polymerization reaction uses azodicyanovalerate as a thermal polymerization initiator. During the formation of the cured film, the side-epoxy groups and terminal carboxyl groups in the polymer can increase the solubility in the developer, thereby improving resolution.

Description

Technical Field

[0001] This invention relates to a positive photoresist composition and a cured film, as well as a method for synthesizing the same, and belongs to the field of photoresist technology. Background Technology

[0002] Methods to increase the aperture ratio of display devices can produce LCDs or OLEDs with higher accuracy / resolution characteristics. According to this method, a transparent planarization film is placed on a thin-film transistor (TFT) substrate as a protective film, which allows data lines and pixel electrodes to overlap, thereby increasing the aperture ratio compared to conventional methods. To prepare such a transparent planarization film, several processing steps are used to impart a specific pattern. Positive photoresist compositions are widely used in this method because they require fewer processing steps. Specifically, positive photoresist compositions containing acrylate copolymers are well-known for their high transparency and low dielectric constant.

[0003] Commonly used photoresist polymers are polymers that undergo photochemical reactions to alter their solubility in specific solvents. Depending on their solubility in the developer, in positive photoresist, the exposed portion is dissolved by the developer to form a pattern. Because positive photoresist undergoes a photodecomposition reaction, compared to negative photoresist, achieving higher resolution requires the use of acrylic resins with a lower molecular weight distribution and an effective distribution of alkali-soluble acidic segments. Summary of the Invention

[0004] Purpose of the invention: In view of the above-mentioned existing problems and deficiencies, the purpose of the present invention is to provide a positive photoresist composition and a cured film and a method for synthesizing the same. When forming the cured film, the side-position epoxy groups and terminal carboxyl groups in the polymer can improve the solubility in the developer and improve the resolution.

[0005] Technical solution: To achieve the above-mentioned objectives, the present invention adopts the following technical solution:

[0006] A positive photoresist composition includes an organic solvent and a solute dissolved in the organic solvent. The solute includes a copolymer of acrylates containing side-position epoxy groups and terminal carboxyl groups, a diazonaphthoquinone compound, and a surfactant. The copolymer of acrylates containing side-position epoxy groups and terminal carboxyl groups is polymerized from one or more monomers selected from glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, glycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, and monomers that cannot contain unsaturated carboxylic acids. The polymerization reaction uses azodicyanovalerate as a thermal polymerization initiator. The solids content of the organic solvent is 10-70% by weight.

[0007] Furthermore, it also includes a molecular weight control agent, and nitrogen gas is introduced into the reactants during the polymerization reaction while the mixture is slowly stirred for polymerization.

[0008] Furthermore, the solvent used in the preparation of the copolymer containing side-position epoxy groups and terminal carboxyl groups is one or more combinations of phenyl methacrylate, benzyl methacrylate, 2-phenoxyethyl methacrylate, phenoxydiethylene glycol methacrylate, p-nonylphenoxy polyethylene glycol methacrylate, p-nonylphenoxy polypropylene glycol methacrylate, tribromophenyl methacrylate, styrene, methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, divinylbenzene, and vinylphenol.

[0009] Furthermore, the diazonaquinone compounds include one or more combinations of phenolic compounds, esters of 1,2-diazidonaphthoquinone-4-sulfonic acid and 1,2-diazidonaphthoquinone-5-sulfonic acid, phenolic compounds with hydroxyl groups substituted by amino groups, and sulfonamides of 1,2-diazidobenzoquinone-4-sulfonic acid or 1,2-diazidobenzoquinone-5-sulfonic acid, wherein the diazonaquinone compounds account for 2 to 30% of the total weight.

[0010] Furthermore, the diazonaphthoquinone compound is one or more combinations of the following: an ester of 2,3,4-trihydroxybenzophenone and 1,2-diazonaphthoquinone-4-sulfonic acid; an ester of 2,3,4-trihydroxybenzophenone and 1,2-diazonaphthoquinone-5-sulfonic acid; an ester of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazonaphthoquinone-4-sulfonic acid; and an ester of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazonaphthoquinone-5-sulfonic acid.

[0011] Furthermore, the solid weight content of the organic solvent is 15-60%.

[0012] Furthermore, the organic solvent includes alcohols, ethers, glycol ethers, ethylene glycol alkyl ether acetates, diethylene glycol, propylene glycol monoalkyl ethers, propylene glycol alkyl ether acetates, propylene glycol alkyl ether propionates, aromatic hydrocarbons, ketones, and esters.

[0013] Further, the organic solvents include methanol, ethanol, tetrahydrofuran, dioxane, methyl cellosolve acetate, ethyl cellosolve acetate, ethyl acetoacetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, propylene glycol butyl ether acetate, toluene, xylene, methyl ethyl ketone, 4-hydroxy-4-methyl-2-pentanone, cyclopentanone, cyclohexanone, 2-heptanone, γ- Butyrolactone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

[0014] Furthermore, the organic solvent includes diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, and methyl 2-methoxypropionate.

[0015] A positive photoresist curing film is prepared by coating a positive photoresist composition onto a substrate and curing it at a temperature of 150-300°C with a concentration of 10-200 mJ / cm². 2 Exposure is performed at a certain rate to obtain a cured film.

[0016] Beneficial effects: Compared with the prior art, the present invention has the following advantages: When forming a cured film, the side epoxy groups and terminal carboxyl groups in the polymer can improve the solubility in the developer and improve the resolution. Attached Figure Description

[0017] Figure 1 This is a flowchart illustrating an embodiment of the present invention;

[0018] Figure 2 This is a flowchart illustrating the solid film generation process of an embodiment of the present invention. Detailed Implementation

[0019] The present invention will be further illustrated below with reference to the accompanying drawings and specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. After reading this invention, any modifications of the invention in various equivalent forms by those skilled in the art will fall within the scope defined by the appended claims.

[0020] like Figure 1 and Figure 2 The diagram shown is a schematic flowchart of a positive photoresist composition, a cured film, and its synthesis method.

[0021] The positive photoresist composition of the present invention comprises (A) a copolymer of acrylates containing side-position epoxy groups and terminal carboxyl groups; (B) a diazonaphthoquinone compound; and (C) a solvent. If necessary, the positive photoresist composition may further comprise (D) a surfactant.

[0022] The weight-average molecular weight of each component described below was measured by gel permeation chromatography (GPC, eluent: tetrahydrofuran) using polystyrene standards.

[0023] (A) A copolymer of acrylates containing side-positioned epoxy groups and terminal carboxyl groups

[0024] The positive photoresist composition according to the present invention may contain a side-position epoxy group and a terminal carboxyl acrylate copolymer (A).

[0025] The monomers used for polymerization of acrylate copolymers containing side-position epoxy groups and terminal carboxyl groups (A) must contain at least one of the following: glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, glycidyl methacrylate, and 3,4-epoxycyclohexyl methacrylate. Unsaturated carboxylic acid monomers are not permitted, otherwise, during thermal polymerization, they are prone to crosslinking with epoxy monomers, and the desired polymer single chain cannot be obtained. Additionally, azodicyanovaleric acid, a thermal polymerization initiator selected from the following, must be present to ensure that the polymer chain ends with carboxyl groups (valeric acid is relatively weaker than acetic acid and will not crosslink with epoxy groups at the polymerization temperature).

[0026] It can be at least one of the following groups: olefinic unsaturated compounds having an aromatic ring, such as phenyl methacrylate, benzyl methacrylate, 2-phenoxyethyl methacrylate, phenoxydiethylene glycol (meth)acrylate, p-nonylphenoxy polyethylene glycol (meth)acrylate, p-nonylphenoxy polypropylene glycol (meth)acrylate, tribromophenyl methacrylate, styrene, methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, divinylbenzene, vinylphenol, but it is not limited thereto.

[0027] A copolymer of acrylates containing side-position epoxy groups and terminal carboxyl groups (A) can be prepared by mixing monomers, adding a molecular weight control agent, a thermal polymerization initiator, a solvent, etc., followed by filling the mixture with nitrogen and slowly stirring the mixture for polymerization.

[0028] Alternatively, the solvent can be any solvent commonly used in the preparation of acrylate copolymers (A) containing side-position epoxy groups and terminal carboxyl groups. It can preferably be methyl 3-methoxypropionate or propylene glycol monomethyl ether acetate.

[0029] (B) Diazonaphthoquinone compounds

[0030] The positive photoresist composition according to the present invention may further contain a diazonaphthoquinone compound (D).

[0031] Diazonaphthoquinone compounds can be any compound used as a photosensitizer in the field of photoresist.

[0032] Examples of diazonaquinone compounds include esters of phenolic compounds with 1,2-diazidonaphthoquinone-4-sulfonic acid or 1,2-diazidonaphthoquinone-5-sulfonic acid; sulfonamides of phenolic compounds wherein the hydroxyl group is replaced by an amino group with 1,2-diazidonaphthoquinone-4-sulfonic acid or 1,2-diazidonaphthoquinone-5-sulfonic acid; and sulfonamides of phenolic compounds wherein the hydroxyl group is replaced by an amino group with 1,2-diazidonaphthoquinone-4-sulfonic acid or 1,2-diazidonaphthoquinone-5-sulfonic acid. The above compounds can be used alone or in combinations of two or more of them. More specific examples of diazonaquinone compounds include esters of 2,3,4-trihydroxybenzophenone with 1,2-diazidonaphthoquinone-4-sulfonic acid, esters of 2,3,4-trihydroxybenzophenone with 1,2-diazidonaphthoquinone-5-sulfonic acid, esters of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol with 1,2-diazidonaphthoquinone-4-sulfonic acid, and esters of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol with 1,2-diazidonaphthoquinone-5-sulfonic acid, etc. The above compounds can be used alone or in combinations of two or more of them.

[0033] Using the preferred compounds exemplified above can further enhance the transparency of the photoresist composition. The diazonoquinone compound (D) can be used in an amount ranging from 2 to 30 parts by weight, preferably 2 to 20 parts by weight, based on 100 parts by weight of the siloxane copolymer (A) in terms of solids content. Within this range, patterning is easier to form, and it is possible to suppress defects such as rough surfaces during coating formation.

[0034] (C) Solvent

[0035] The positive photoresist composition of the present invention can be prepared in the form of a liquid composition in which the above components are mixed with a solvent.

[0036] The amount of solvent in the positive photoresist composition according to the invention is not particularly limited. For example, a solvent may be used such that the solid content, based on the total weight of the composition, is 10 to 70%, preferably 15 to 60%.

[0037] The term solids content refers to the components constituting the composition excluding solvent. If the amount of solvent is within the range mentioned above, the composition can be easily coated, and its flowability can be maintained at an appropriate level.

[0038] The solvent of the present invention is not particularly limited, as long as it can dissolve the above components and is chemically stable.

[0039] For example, the solvent can be alcohol, ether, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, propylene glycol alkyl ether propionate, aromatic hydrocarbon, ketone, ester, etc.

[0040] Specific examples of solvents include methanol, ethanol, tetrahydrofuran, dioxane, methyl cellosolve acetate, ethyl cellosolve acetate, ethyl acetoacetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, propylene glycol butyl ether acetate, toluene, xylene, methyl ethyl ketone, 4-hydroxy-4-methyl-2-pentanone, cyclopentanone, cyclohexanone, 2-heptanone, γ- Butyrolactone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, etc.

[0041] The preferred materials mentioned above are ethylene glycol alkyl ether acetates, diethylene glycol, propylene glycol monoalkyl ethers, propylene glycol alkyl ether acetates, ketones, etc. More specifically, preferred materials include diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, methyl 2-methoxypropionate, etc.

[0042] The solvents listed above can be used alone or in combination of two or more of them.

[0043] (D) Surfactants

[0044] The positive photoresist composition of the present invention may further include surfactants to improve its coatability when needed.

[0045] The type of surfactant is not particularly limited. Examples include fluorinated surfactants, silicone surfactants, and nonionic surfactants.

[0046] The present invention provides a cured film formed from a photoresist composition.

[0047] The cured film can be formed by methods known in the art, such as methods in which a photoresist composition is coated onto a substrate and then cured.

[0048] More specifically, in the curing step, the photoresist composition coated on the substrate can be pre-baked at a temperature of, for example, 60°C to 130°C to remove solvent; then exposed using a photomask with the desired pattern; and developed using a developer (e.g., tetramethylammonium hydroxide (TMAH) solution) to form a pattern on the coating. Subsequently, if desired, the patterned coating is post-baked at a temperature of 150°C to 300°C for 10 minutes to 5 hours to prepare the desired cured film. Exposure can be performed in the 200 to 500 nm wavelength range, with a wavelength of 365 nm as a reference, at a concentration of 10 to 200 mJ / cm². 2 The exposure rate is adjusted accordingly. From a process point of view, the desired pattern can be easily formed using the method according to the invention.

[0049] The invention will be described in more detail below with reference to the following examples. However, these examples are provided to illustrate the invention, and the scope of the invention is not limited thereto. In the following synthetic examples, the weight-average molecular weight was determined by gel permeation chromatography (GPC) using polystyrene standards.

[0050] Synthesis Example 1: Acrylic ester copolymer containing side-position epoxy groups and terminal carboxyl groups (A1)

[0051] 200 parts by weight of propylene glycol methyl ether acetate were added as a solvent to a flask equipped with a cooling tube and a stirrer, and the solvent was allowed to...

[0052] The temperature was raised to 70°C while the solvent was slowly stirred. Next, 30 parts by weight of styrene, 45 parts by weight of 3,4-epoxycyclohexyl acrylate, 5 parts by weight of dodecyl mercaptan, and 10 parts by weight of methyl methacrylate were added. Then, 10 parts by weight of azodicyanovalerate were added dropwise over 6 hours as a free radical polymerization initiator to initiate the polymerization reaction. The resulting product was then diluted with propylene glycol methyl ether acetate to a solids content of 30% by weight. Thus, an acrylate copolymer with a weight average molecular weight of approximately 9,000 to 11,000 Da was synthesized.

[0053] Synthesis Example 2: Acrylate copolymer containing side-position epoxy groups and terminal carboxyl groups (A2)

[0054] 200 parts by weight of propylene glycol methyl ether acetate were added as a solvent to a flask equipped with a cooling tube and a stirrer, and the solvent was allowed to...

[0055] The temperature was raised to 70°C while the solvent was slowly stirred. Next, 30 parts by weight of styrene, 45 parts by weight of glycidyl methacrylate, 5 parts by weight of dodecyl mercaptan, and 10 parts by weight of methyl methacrylate were added. Then, 10 parts by weight of azodicyanovalerate was added dropwise over 6 hours as a free radical polymerization initiator to initiate the polymerization reaction. The resulting product was then diluted with propylene glycol methyl ether acetate to a solids content of 30% by weight. Thus, an acrylate copolymer with a weight average molecular weight of approximately 9,000 to 11,000 Da was synthesized.

[0056] Synthetic Example 3: Acrylate copolymer without side-position epoxy groups and terminal carboxyl groups (A3)

[0057] 200 parts by weight of propylene glycol methyl ether acetate were added as a solvent to a flask equipped with a cooling tube and a stirrer, and the solvent was allowed to...

[0058] The temperature was raised to 70°C while the solvent was slowly stirred. Next, 50 parts by weight of styrene, 20 parts by weight of methyl methacrylate, 5 parts by weight of dodecyl mercaptan, and 15 parts by weight of methacrylic acid were added. Then, over 6 hours, 10 parts by weight of 2,2'-azobis(2,4-dimethylpentanonitrile) were added dropwise as a free radical polymerization initiator to initiate the polymerization reaction. The resulting product was then diluted with propylene glycol methyl ether acetate to a solids content of 30% by weight. Thus, an acrylate copolymer with a weight average molecular weight of approximately 9,000 to 11,000 Da was synthesized.

[0059] Examples and Comparative Examples: Preparation of Photoresist Compositions

[0060] The photoresist compositions of the following examples and comparative examples were prepared using the compounds prepared in the synthesis examples above.

[0061] The components used in the following embodiments and comparative embodiments are shown in Table 1 below:

[0062] Table 1

[0063]

[0064] Example 1

[0065] 16 g of the acrylate copolymer (A1) from Synthetic Example 1, 1 g of the diazonoquinone compound (B), and 0.02 g of surfactant (D) were uniformly mixed. In this case, the corresponding contents are those based on the solids content excluding solvent. The mixture was dissolved in propylene glycol methyl ether acetate such that the solids content of the mixture was 17% by weight. The solution was stirred for 2 hours and filtered through a membrane filter with a pore size of 0.1 μm to obtain a composition solution with a solids content of 17% by weight.

[0066] Example 2 and Comparative Example 3

[0067] The photoresist compositions were each prepared in the same manner as in Example 1, except that the types and / or contents of the corresponding components varied as shown in Table 2 below.

[0068] Table 2

[0069]

[0070] Test Example 1: Evaluating Resolution

[0071] The copolymer compositions prepared in the examples and comparative examples were each spin-coated onto glass substrates. The coated substrates were then pre-baked on a hot plate maintained at 100°C for 90 seconds to form a dry film. An aligner (model name: MA6) emitting light with wavelengths from 200 nm to 450 nm was then used, with a wavelength of 365 nm as a reference, at a concentration of 0-200 mJ / cm². 2 The exposure rate allows for a specific exposure time. The dried film is developed for 60 seconds at 23°C with a developer (a 2.5% by weight TMAH aqueous solution). Subsequently, the resulting exposed film is heated in a convection oven at 230°C for 30 minutes to prepare a cured film with a thickness of 2 μm. For patterns formed according to the minimum 1 μm mask size in the above procedure, the smaller the obtained pattern sharpness size, the higher the resolution. A value less than 6 is marked as high resolution, and a value greater than 5 is marked as ordinary.

[0072] Test Example 2: Evaluating Adhesion

[0073] The copolymer compositions prepared in the Examples and Comparative Examples were each spin-coated onto glass substrates. The coated substrates were then pre-baked on a hot plate maintained at 100°C for 90 seconds to form a dried film. Cured films were obtained in the same manner as in Example 1, except that a photomask was applied in which each pattern of six lines ranging from 1 μm to 30 μm was spaced 1 μm apart. The extent of the minimum residual line pattern in the 1 to 30 μm line patterns on the silicon nitride substrate was then observed using a microscope. During microscopic observation, the pattern with the lowest CD size remaining after the line pattern separated from the mask was evaluated as development adhesion. The smaller the minimum residual pattern size, the better the development adhesion. The key performance test results are shown in Table 3 below:

[0074] Table 3

[0075]

[0076] As shown in Table 3 above, the compositions of the embodiments within the scope of the present invention are generally excellent in terms of resolution and adhesion. Conversely, the compositions of the comparative embodiments not within the scope of the present invention show that at least one of these properties is disadvantageous.

[0077] A positive photoresist composition containing a copolymer of esters with side-position epoxy groups and terminal carboxyl groups, and a method for synthesizing the same. The monomers used for polymerization must contain at least one selected from the following: glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, glycidyl methacrylate, and 3,4-epoxycyclohexyl methacrylate. Unsaturated carboxylic acid monomers cannot be included; otherwise, during thermal polymerization, they are prone to crosslinking with epoxy monomers, and the desired polymer single chains cannot be obtained. Additionally, azodicyanovalerate, a thermal polymerization initiator selected from the following, must be included to ensure that the polymer chain ends with carboxyl groups (valerate is a weaker acid than acetic acid and will not crosslink with epoxy groups at the polymerization temperature).

Claims

1. A positive photoresist composition, characterized in that: The mixture includes an organic solvent and a solute dissolved in the organic solvent. The solute includes a copolymer of acrylates containing side-epoxy groups and terminal carboxyl groups, a diazonaphthoquinone compound, and a surfactant. The copolymer of acrylates containing side-epoxy groups and terminal carboxyl groups is formed by polymerization of one or more of glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, glycidyl methacrylate, and 3,4-epoxycyclohexyl methacrylate with a monomer that does not contain unsaturated carboxylic acids. The polymerization reaction uses azodicyanovalerate as a thermal polymerization initiator. The solids content of the organic solvent is 10-70% by weight.

2. The positive photoresist composition according to claim 1, characterized in that: It also includes molecular weight control agents, nitrogen gas is introduced into the reactants during the polymerization reaction and the mixture is slowly stirred for polymerization.

3. The positive photoresist composition according to claim 1, characterized in that: The solvent used in the preparation of the copolymer containing side-position epoxy groups and terminal carboxyl groups is one or more combinations of phenyl methacrylate, benzyl methacrylate, 2-phenoxyethyl methacrylate, phenoxydiethylene glycol methacrylate, p-nonylphenoxy polyethylene glycol methacrylate, p-nonylphenoxy polypropylene glycol methacrylate, tribromophenyl methacrylate, styrene, methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, divinylbenzene, and vinylphenol.

4. The positive photoresist composition according to claim 1, characterized in that: The diazonaquinone compounds include one or more combinations of phenolic compounds, esters of 1,2-diazidonaphthoquinone-4-sulfonic acid and 1,2-diazidonaphthoquinone-5-sulfonic acid, phenolic compounds with hydroxyl groups replaced by amino groups, and sulfonamides of 1,2-diazidobenzoquinone-4-sulfonic acid or 1,2-diazidobenzoquinone-5-sulfonic acid, wherein the diazonaquinone compounds account for 2 to 30% of the total weight.

5. The positive photoresist composition according to claim 1, characterized in that: The diazonaphthoquinone compounds are one or more combinations of the following: esters of 2,3,4-trihydroxybenzophenone and 1,2-diazonaphthoquinone-4-sulfonic acid; esters of 2,3,4-trihydroxybenzophenone and 1,2-diazonaphthoquinone-5-sulfonic acid; esters of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazonaphthoquinone-4-sulfonic acid; and esters of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazonaphthoquinone-5-sulfonic acid.

6. The positive photoresist composition according to claim 1, characterized in that: The organic solvent has a solids content of 15-60% by weight.

7. The positive photoresist composition according to claim 1, characterized in that: The organic solvents include alcohols, ethers, glycol ethers, ethylene glycol alkyl ether acetates, diethylene glycol, propylene glycol monoalkyl ethers, propylene glycol alkyl ether acetates, propylene glycol alkyl ether propionates, aromatic hydrocarbons, ketones, and esters.

8. The positive photoresist composition according to claim 1, characterized in that: The organic solvents include methanol, ethanol, tetrahydrofuran, dioxane, methyl cellosolve acetate, ethyl cellosolve acetate, ethyl acetoacetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, propylene glycol butyl ether acetate, toluene, xylene, methyl ethyl ketone, 4-hydroxy-4-methyl-2-pentanone, cyclopentanone, cyclohexanone, 2-heptanone, γ- Butyrolactone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

9. The positive photoresist composition according to claim 1, characterized in that: The organic solvents include diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, and methyl 2-methoxypropionate.

10. A positive photoresist cured film, characterized in that: The positive photoresist composition according to claim 1 is applied to a substrate and cured and baked at a temperature of 150~300°C with a concentration of 10~200 mJ / cm. 2 Exposure is performed at a certain rate to obtain a cured film.

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