Sensing device

Abstract

The present invention discloses a sensing device, which has a sensing region, a pad region and a peripheral region, and the pad region is located between the sensing region and the peripheral region, and includes: a sensing element, a pad and a strip-shaped metal. The sensing element is located in the sensing region. The pad is located in the pad region and is electrically connected to the sensing element. The strip-shaped metal is located in the peripheral region, and the extending direction of the strip-shaped metal is parallel to the extending direction of the pad.

Description

Technical Field

[0001] The present invention relates to an optoelectronic device, and particularly to a sensing device. Background Art

[0002] Due to its excellent performance, optical sensors have been widely used in fields such as security inspection, industrial inspection, and medical diagnosis. For example, in medical diagnosis, X-ray sensors can be used to capture images of the human chest, blood vessels, teeth, etc. Such sensors mainly include PIN diodes and thin film transistors (TFTs), where the PIN diode can convert light energy into an electrical signal, and the thin film transistor is used to read the electrical signal measured by the PIN diode.

[0003] Generally, the manufacturing method of an optical sensor is to complete the multi-layer film stack structure of the PIN diode and the thin film transistor on a temporary substrate, first cover a protective film, then remove the temporary substrate, transfer the above multi-layer film stack structure to a suitable mother board, and then separate the above multi-layer film stack structure into multiple sensing modules by laser cutting, and then tear off the protective film. However, since the properties of the film layers near the laser cutting line are deteriorated by the heat of the laser, these deteriorated film layers are easily peeled off together with the protective film when the protective film is torn off, and even the peeling range of the film layers extends inward, resulting in poor production yield and reliability of the sensor. Summary of the Invention

[0004] The present invention provides a sensing device with good production yield and reliability.

[0005] An embodiment of the present invention provides a sensing device having a sensing area, a pad area, and a peripheral area, and the pad area is located between the sensing area and the peripheral area, including: a sensing element located in the sensing area; a pad located in the pad area and electrically connected to the sensing element; and a strip-shaped metal located in the peripheral area, and the extending direction of the strip-shaped metal is parallel to the extending direction of the pad.

[0006] In an embodiment of the present invention, the length of the above strip-shaped metal is greater than the width.

[0007] In an embodiment of the present invention, the above strip-shaped metal is physically separated from the pad.

[0008] In an embodiment of the present invention, the above strip-shaped metal is aligned with the pad.

[0009] In an embodiment of the present invention, the above strip-shaped metal is offset from the pad.

[0010] In an embodiment of the present invention, the pitch of the above strip-shaped metal is less than or equal to the pitch of the pad.

[0011] In an embodiment of the present invention, the width of the above-mentioned strip-shaped metal is less than the pitch between the pads.

[0012] In an embodiment of the present invention, the setting density of the above-mentioned strip-shaped metal is greater than or equal to the setting density of the pads.

[0013] In an embodiment of the present invention, the above-mentioned strip-shaped metal has a single-layer or double-layer structure.

[0014] In an embodiment of the present invention, the extending direction of the above-mentioned strip-shaped metal is perpendicular to the side of the sensing device.

[0015] In an embodiment of the present invention, the width of the above-mentioned strip-shaped metal is 1 μm to 50 μm.

[0016] In an embodiment of the present invention, the minimum distance from the above-mentioned strip-shaped metal to the side of the sensing device is 50 μm to 500 μm.

[0017] In an embodiment of the present invention, the above-mentioned pad area surrounds a part of the sensing area.

[0018] In an embodiment of the present invention, the above-mentioned peripheral area surrounds the pad area and the sensing area.

[0019] In an embodiment of the present invention, the above-mentioned sensing element includes an upper electrode, a lower electrode, and a photoelectric conversion layer located between the upper electrode and the lower electrode, and the strip-shaped metal and the lower electrode belong to the same film layer.

[0020] In an embodiment of the present invention, the above-mentioned sensing device further includes a common electrode, electrically connected to the sensing element, and the common electrode and the strip-shaped metal belong to the same film layer.

[0021] In an embodiment of the present invention, the above-mentioned sensing device further includes a switching element, electrically connected to the sensing element, and the source electrode of the switching element and the strip-shaped metal belong to the same film layer.

[0022] To make the above features and advantages of the present invention more obvious and understandable, the following specific embodiments are given, and detailed descriptions are made in conjunction with the accompanying drawings as follows. Description of the Drawings

[0023] Figure 1A is a top view schematic diagram of the sensing device 10 according to an embodiment of the present invention;

[0024] Figure 1B is Figure 1A a cross-sectional schematic diagram taken along the section line A-A';

[0025] Figure 1C is Figure 1A a cross-sectional schematic diagram taken along the section line B-B';

[0026] Figure 2 is a partial cross-sectional schematic diagram of the sensing device 20 according to an embodiment of the present invention;

[0027] Figure 3 is a top view schematic diagram of the sensing device 30 according to an embodiment of the present invention;

[0028] Figure 4 is a top view schematic diagram of the sensing device 40 according to an embodiment of the present invention;

[0029] Figure 5 is a top view schematic diagram of the sensing device 50 according to an embodiment of the present invention.

[0030] Symbol Description

[0031] 10, 20, 30, 40, 50: Sensing device

[0032] A-A’, B-B’: Section line

[0033] A1, A2, A3, A4, B1, B2: Side

[0034] AA: Sensing area

[0035] AF: Conductive adhesive

[0036] BA: Pad area

[0037] BE: Lower electrode

[0038] BF: Barrier layer

[0039] BP: Conductive bump

[0040] BS: Bottom plate

[0041] CA: Peripheral area

[0042] CF: Chip bonding component

[0043] CH: Semiconductor layer

[0044] CM: Common electrode

[0045] CM’: Electrode

[0046] D1, D2: Minimum distance

[0047] DE: Drain

[0048] G1, G2, G3, G4, G5: Spacing

[0049] GE: Gate

[0050] I1, I2, I3, I4: Insulating layer

[0051] Ls: Length

[0052] M2: Conductive layer

[0053] O1, O2, O3: Opening

[0054] PD: Pad

[0055] PN: Photoelectric conversion layer

[0056] Pw: Portion

[0057] S1, S2, S3, S4: Side

[0058] SB: Substrate

[0059] SD: Sensing element

[0060] SE: Source electrode

[0061] SM, SM1, SM2: Strip-shaped metal

[0062] SR: Insulating layer

[0063] SW: Switching element

[0064] TE: Top electrode

[0065] Wp, Ws: Width

[0066] WR: Metal wire

[0067] Y: Direction Detailed implementation manner

[0068] In the drawings, for clarity, the thicknesses of layers, films, panels, regions, etc. are exaggerated. Throughout the specification, like reference numerals denote like elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or intervening elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, no intervening element is present. As used herein, "connected" can refer to physical and / or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

[0069] The terms used herein are for the purpose of describing particular embodiments only and are not limiting. As used herein, unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms, including "at least one" or indicating "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprises" and / or "comprising" specify the presence of the stated features, regions, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components, and / or combinations thereof.

[0070] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is flipped, an element described as on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can include both the "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is flipped, an element described as "below" or "beneath" other elements will be oriented as "above" the other elements. Thus, the exemplary term "below" or "beneath" can include both above and below orientations.

[0071] Taking into account the particular amounts of the measurements discussed and the errors associated with the measurements (i.e., the limitations of the measurement system), "about", "approximately", or "substantially" as used herein includes the stated value and the average value within an acceptable deviation range of the specific value determined by a person of ordinary skill in the art. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately", or "substantially" as used herein can be selected with a more acceptable deviation range or standard deviation depending on optical properties, etching properties, or other properties, rather than applying one standard deviation to all properties.

[0072] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this invention, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0073] Exemplary embodiments are described with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Accordingly, shape variations as a result of, for example, manufacturing techniques and / or tolerances are to be expected. Thus, the embodiments described herein are not to be construed as limited to the particular shapes of regions as shown herein, but include, for example, shape deviations resulting from manufacturing. For example, regions shown or described as flat may typically have rough and / or non-linear features. Additionally, the sharp angles shown may be rounded. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to depict the exact shape of the regions and are not intended to limit the scope of the claims.

[0074] Figure 1A is a top view schematic diagram of a sensing device 10 according to an embodiment of the present invention. Figure 1B is along Figure 1A the sectional view taken along the section line A - A' of Figure 1C is along Figure 1A the sectional view taken along the section line B - B' of Figures 1A to 1C Please refer to

[0075] simultaneously. The sensing device 10 has a sensing region AA, a pad region BA, and a peripheral region CA, and the pad region BA is located between the sensing region AA and the peripheral region CA. The sensing device 10 includes: a sensing element SD located in the sensing region AA; a pad PD located in the pad region BA and electrically connected to the sensing element SD; and a strip-shaped metal SM located in the peripheral region CA, and the extending direction of the strip-shaped metal SM is parallel to the extending direction of the pad PD.

[0076] Please refer to Figure 1A and Figure 1B simultaneously. In this embodiment, a plurality of sensing elements SD arranged in an array may be provided in the sensing region AA of the sensing device 10. The sensing element SD is, for example, a PIN diode, which is used to convert light energy into an electrical signal. For example, the sensing element SD may be disposed on a substrate SB, and the sensing element SD may include an upper electrode TE, a lower electrode BE, and a photoelectric conversion layer PN. The upper electrode TE is located on the photoelectric conversion layer PN, the photoelectric conversion layer PN is located on the lower electrode BE, and the photoelectric conversion layer PN may be connected to the lower electrode BE through an opening O1 in the insulating layer I2. The photoelectric conversion layer PN is located between the upper electrode TE and the lower electrode BE, and the upper electrode TE and the lower electrode BE are electrically independent of each other. The photoelectric conversion layer PN may absorb visible light above the sensing element SD and generate a corresponding electrical signal.

[0077] The material of the lower electrode BE may include metals such as chromium (Cr), gold (Au), silver (Ag), copper (Cu), tin (Sn), lead (Pb), hafnium (Hf), tungsten (W), molybdenum (Mo), neodymium (Nd), titanium (Ti), tantalum (Ta), aluminum (Al), zinc (Zn), or alloys of any combination of the above metals, or laminates of the above metals and / or alloys, but not limited thereto. The lower electrode BE may also contain other conductive materials, such as: nitrides of metals, oxides of metals, oxynitrides of metals, stacked layers of metals and other conductive materials, or other materials with conductive properties.

[0078] The optoelectronic conversion layer PN may include an N-type semiconductor material layer, an intrinsic semiconductor material layer, and a P-type semiconductor material layer formed in sequence on the lower electrode BE. For example, the intrinsic semiconductor material layer is, for example, intrinsic amorphous silicon. The N-type semiconductor material layer is, for example, amorphous silicon doped with phosphorus (P). The P-type semiconductor material layer is, for example, amorphous silicon doped with boron (B), but the present invention is not limited thereto.

[0079] The upper electrode TE may be a light-transmissive electrode. For example, the material of the upper electrode TE may include indium tin oxide (InSnO), indium zinc oxide (InZnO), aluminum zinc oxide (AlZnO), aluminum indium oxide (AlInO), indium oxide (InO), gallium oxide (GaO), carbon nanotubes, silver nanoparticles, metals or alloys with a thickness less than 60 nanometers (nm), organic transparent conductive materials, or other suitable transparent conductive materials.

[0080] In some embodiments, the sensing device 10 may further include a wavelength conversion layer (not shown in the figure). The wavelength conversion layer may be disposed above the plurality of sensing elements SD to convert light (such as X-rays) from Figure 1B the upper side into visible light, and the wavelength conversion layer may include a material such as cesium iodide (CsI).

[0081] In some embodiments, the sensing device 10 may further include a plurality of switching elements SW. The plurality of switching elements SW are disposed in the sensing region AA, and the plurality of switching elements SW may be electrically connected to the plurality of sensing elements SD respectively to read the electrical signals measured by the sensing elements SD. For example, please refer to Figure 1B, the switching element SW can be disposed on the substrate SB, and the switching element SW can include a semiconductor layer CH, a source electrode SE, a drain electrode DE, and a gate electrode GE. A barrier layer BF is located between the substrate SB and the gate electrode GE, an insulating layer I1 is located between the gate electrode GE and the semiconductor layer CH, the source electrode SE and the drain electrode DE are respectively connected to two ends of the semiconductor layer CH, an insulating layer I2 is located on the semiconductor layer CH, the source electrode SE, and the drain electrode DE, and the source electrode SE is electrically connected to the lower electrode BE of the sensing element SD. In addition, the source electrode SE and the lower electrode BE of the sensing element SD can belong to the same film layer.

[0082] The material of the semiconductor layer CH is, for example, a metal oxide material. That is to say, the switching element SW can be a metal oxide thin film transistor (Metal Oxide Transistor), but the present invention is not limited thereto. In other embodiments, the switching element SW can also be a low temperature polycrystalline silicon thin film transistor (LTPS TFT), a microcrystalline silicon thin film transistor (micro-Si TFT), or an amorphous silicon thin film transistor (Amorphous Silicon TFT, a-Si TFT). In addition, it should be noted that the gate electrode GE, the source electrode SE, the drain electrode DE, the barrier layer BF, and the insulating layers I1 and I2 can be formed by any materials and methods well known to those of ordinary skill in the art, so they will not be elaborated herein.

[0083] In some embodiments, the sensing device 10 can further include an insulating layer I3, a common electrode CM, and an insulating layer I4. The insulating layer I3 can be disposed on the switching element SW and the sensing element SD; the common electrode CM can be disposed on the insulating layer I3, and the common electrode CM can be electrically connected to the upper electrode TE through an opening O2 in the insulating layer I3; and the insulating layer I4 can be located on the common electrode CM.

[0084] The material of the common electrode CM can include a metal, an alloy, a nitride of a metal, an oxide of a metal, a oxynitride of a metal, other conductive materials, or a stacked layer of at least two of the foregoing materials.

[0085] Please refer to Figure 1A, the pad region BA of the sensing device 10 can surround a part of the sensing region AA, and the peripheral region CA can surround the pad region BA, but the present invention is not limited thereto, and the configurations of the sensing region AA, the pad region BA, and the peripheral region CA can be changed as needed. Specifically, in this embodiment, the pad region BA is adjacent to the side edges A1, A2 of the sensing region AA, and a plurality of pads PD can be arranged along the side edges A1, A2 in the pad region BA. The plurality of pads PD can generally extend from the side edges A1, A2 of the sensing region AA toward the side edges S1, S2 of the sensing device 10, and the extending direction of the pads PD can be generally perpendicular to the adjacent side edges A1, A2 or side edges S1, S2. The spacing G1 between the plurality of pads PD can be the same, but is not limited thereto. For example, the plurality of pads PD can be partitioned according to the objects to which they are electrically connected, and the spacing G2 between adjacent regions can be slightly larger than the spacing G1 between the pads PD in the same region. The material of the pads PD can include transparent conductive materials such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, aluminum indium oxide, indium oxide, or gallium oxide.

[0086] In this embodiment, the strip-shaped metal SM can be disposed adjacent to the side edges B1, B2 of the pad region BA and the side edges S1, S2 of the sensing device 10, and the strip-shaped metal SM can generally extend from the side edges B1, B2 of the pad region BA toward the side edges S1, S2 of the sensing device 10 respectively. The extending direction of the strip-shaped metal SM can be generally perpendicular to the side edges S1, S2 of the sensing device 10, so that the extending direction of the strip-shaped metal SM is generally parallel to the extending direction of the pads PD. The plurality of strip-shaped metals SM can be arranged along the side edges B1, B2 in the peripheral region CA. In this way, when the protective film above the insulating layer I3 is peeled off from the side edge S1 of the sensing device 10, the strip-shaped metal SM can prevent the film layers (such as the barrier layer BF, the insulating layers I1, I2, and the planarization layer PL) below it from being peeled off together. The material of the strip-shaped metal SM is, for example, chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, or an alloy of any combination of the above metals, or a laminate of the above metals and / or alloys, but the present invention is not limited thereto.

[0087] In this embodiment, the strip-shaped metal SM can be aligned with the pads PD, and the strip-shaped metal SM is physically separated from the pads PD. In other words, each strip-shaped metal SM can be disposed at the extension of the corresponding pad PD, and the setting density of the strip-shaped metal SM can be equal to the setting density of the pads PD, but the present invention is not limited thereto.

[0088] In some embodiments, the pitch of the strip-shaped metal SM (width Ws plus spacing G3) may be approximately equal to or equal to the pitch of the pad PD (width Wp plus spacing G1). In some embodiments, the width Ws of the strip-shaped metal SM may be about 1 μm to 50 μm, such as 10 μm, 30 μm, or 40 μm, and the length Ls of the strip-shaped metal SM is greater than the width Ws. In some embodiments, the minimum distances D1, D2 from the strip-shaped metal SM to the sides S1, S2 of the sensing device 10 may be about 50 μm to 500 μm, such as 150 μm, 250 μm, or 400 μm, so as not to cause the border of the sensing device 10 to be too large.

[0089] Please refer to Figure 1C , in this embodiment, the pad PD may be disposed on the electrode CM' that belongs to the same film layer as the common electrode CM, and the pad PD may be electrically connected to the electrode CM' through the opening O3 of the insulating layer I4, so that the pad PD can be electrically connected to the drain DE of the switching element SW through the electrode CM' and the conductive layer M2.

[0090] In some embodiments, the film layer for forming the common electrode CM may extend to the peripheral area CA and be patterned into a strip-shaped metal SM1. In other words, the strip-shaped metal SM1 may belong to the same film layer as the common electrode CM. Additionally, the conductive layer M2 for forming the source SE and drain DE of the switching element SW and the lower electrode BE of the sensing element SD may also extend to the peripheral area CA and be patterned into a strip-shaped metal SM2. That is to say, the strip-shaped metal SM2 may belong to the same film layer as the source SE and drain DE of the switching element SW and the lower electrode BE of the sensing element SD. In this way, the strip-shaped metal SM may include the strip-shaped metals SM1 and SM2 to have a double-layer structure, and the insulating layers I2 and I3 may be sandwiched between the strip-shaped metals SM1 and SM2. In other embodiments, the strip-shaped metal SM may also include only the strip-shaped metal SM1 or the strip-shaped metal SM2 to have a single-layer structure.

[0091] Hereinafter, use Figures 2 to 5 to continue to describe other embodiments of the present invention, and, continue to use Figures 1A to 1C the component numbers and related content of the embodiments, wherein the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to Figures 1A to 1C the embodiments, and it will not be repeated in the following description.

[0092] Figure 2It is a partial cross-sectional schematic diagram of a sensing device 20 according to an embodiment of the present invention. The sensing device 20 may include: a substrate SB, a barrier layer BF, an insulating layer I1, a conductive layer M2, an insulating layer I2, an insulating layer I3, an electrode CM', an insulating layer I4, a pad PD, and a strip-shaped metal SM, and the pad PD is located in the pad area BA, and the strip-shaped metal SM is located in the peripheral area CA. Figure 2 The shown sensing device 20 and as Figures 1A to 1C The main difference between the shown sensing device 20 and the sensing device 10 as shown is that: the sensing device 20 further includes a chip bonding component CF.

[0093] For example, in this embodiment, the chip bonding component CF may include a bottom plate BS, a metal wire WR, and a conductive bump BP. The metal wire WR may be disposed on the bottom plate BS, and one end of the metal wire WR may be connected to the conductive bump BP, and the other end of the metal wire WR may be electrically connected to, for example, a chip (not shown in the figure) disposed on the chip bonding component CF. In addition, the conductive bump BP may also be electrically connected to the pad PD through, for example, a conductive adhesive AF. In this way, the chip on the chip bonding component CF can transmit signals to the switching element SW through the metal wire WR, the conductive bump BP, the conductive adhesive AF, the pad PD, and the electrode CM'.

[0094] In some embodiments, the chip bonding component CF may further include an insulating layer SR, and the insulating layer SR may cover a part of the metal wire WR to prevent the metal wire WR from making unnecessary electrical connections with other components or film layers. However, since the insulating layer SR may not completely cover the exposed metal wire WR, for example, a part Pw of the metal wire WR may be exposed between the conductive bump BP and the insulating layer SR, and the insulating layer covering the strip-shaped metal SM may be peeled off during the manufacturing process, resulting in the strip-shaped metal SM being exposed. In this case, after the chip bonding component CF is folded back in the direction Y, the part Pw of the metal wire WR may be pressed down to contact the strip-shaped metal SM. Therefore, if the width of the metal wire WR is approximately equal to the width of the pad PD, the width of the strip-shaped metal SM is preferably less than the spacing between the metal wire WR or the pad PD, so that the chip bonding component CF is electrically separated from the strip-shaped metal SM, thereby avoiding short circuits between two adjacent pads PD through the metal wire WR and the strip-shaped metal SM of the chip bonding component CF.

[0095] Figure 3 It is a top view schematic diagram of a sensing device 30 according to an embodiment of the present invention. The sensing device 30 has a sensing area AA, a pad area BA, and a peripheral area CA, and the sensing device 30 includes: a sensing element SD, located in the sensing area AA; a pad PD, located in the pad area BA; and a strip-shaped metal SM, located in the peripheral area CA, and the extending direction of the strip-shaped metal SM is parallel to the extending direction of the adjacent pad PD.

[0096] Figure 3 The main difference between the sensing device 30 shown and the sensing device 10 shown as Figures 1A to 1C follows: The pad region BA of the sensing device 30 can surround a part of the sensing region AA, and the peripheral region CA can surround the pad region BA and a part of the sensing region AA. Specifically, in this embodiment, the pad region BA can be adjacent to the side edges A1, A2 of the sensing region AA, and the peripheral region CA can be adjacent to the pad region BA and a part of the side edges A3, A4 of the sensing region AA. In other words, although no pads PD are provided outside the side edges A3, A4 of the sensing region AA, some strip-shaped metals SM can still be provided near the pads PD outside the side edges A3, A4 of the sensing region AA, thereby preventing the film layer from peeling off at the positions outside the side edges A3, A4 of the sensing region AA near the pads PD.

[0097] In some embodiments, a double row of strip-shaped metals SM can also be provided in the peripheral region CA of the sensing device 30. Alternatively, in other embodiments, three or more rows of strip-shaped metals SM can be provided in the peripheral region CA of the sensing device 30, which can also have the effect of preventing the peripheral film layer from peeling off.

[0098] Figure 4 is a top view schematic diagram of a sensing device 40 according to an embodiment of the present invention. The sensing device 40 has a sensing region AA, a pad region BA, and a peripheral region CA, and the sensing device 40 includes: a sensing element SD located in the sensing region AA; a pad PD located in the pad region BA; and a strip-shaped metal SM located in the peripheral region CA, and the extending directions of the strip-shaped metal SM and the pad PD are both perpendicular to the extending directions of the adjacent side edges S1, S2, S3, S4.

[0099] Figure 4 The main difference between the sensing device 40 shown and the sensing device 10 shown as Figures 1A to 1C follows: The pad region BA of the sensing device 40 surrounds a part of the sensing region AA, and the peripheral region CA can surround the pad region BA and the sensing region AA. Specifically, in this embodiment, the pad region BA can be adjacent to the side edges A1, A2 of the sensing region AA, and the peripheral region CA can be adjacent to the pad region BA and the side edges A3, A4 of the sensing region AA. In other words, the strip-shaped metal SM can be provided on the four side edges S1, S2, S3, S4 of the sensing device 40, and the strip-shaped metal SM can be arranged at approximately equal intervals along the four side edges S1, S2, S3, S4 of the sensing device 40. In this way, no matter which side edge of the sensing device 40 the covering protective film is torn off from, the strip-shaped metal SM can prevent the film layer below it from being peeled off together.

[0100] Figure 5It is a top view schematic diagram of a sensing device 50 according to an embodiment of the present invention. The sensing device 50 has a sensing area AA, a pad area BA, and a peripheral area CA, and the sensing device 50 includes: a sensing element SD located in the sensing area AA; a pad PD located in the pad area BA; and a strip-shaped metal SM located in the peripheral area CA, and the extending directions of the strip-shaped metal SM and the pad PD are both perpendicular to the extending directions of the adjacent side edges S1, S2, S3, and S4.

[0101] Figure 5 The main difference between the shown sensing device 50 and the sensing device 40 shown in Figure 4 is that the setting density of the strip-shaped metal SM of the sensing device 50 can be greater than the setting density of the pad PD. That is to say, the setting density of the strip-shaped metal SM can be denser than the setting density of the pad PD to more finely prevent the film layer from peeling off. In this way, in the extending direction of the strip-shaped metal SM and the pad PD, the setting of the strip-shaped metal SM may not be aligned with the pad PD. In other words, the arrangement of the strip-shaped metal SM may be staggered from the arrangement of the pad PD, and the pitch (spacing G4 plus width Wp) of the pad PD can be greater than the pitch (spacing G5 plus width Ws) of the strip-shaped metal SM.

[0102] In summary, the sensing device of the present invention can prevent the film layer from peeling off by arranging the strip-shaped metal in the peripheral area, thereby improving the production yield and reliability of the sensing device.

[0103] Although the present invention is disclosed in combination with the above embodiments, it is not intended to limit the present invention. Any person of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims

1. A sensing device having a sensing region, a pad region, and a peripheral region, and the pad region is located between the sensing region and the peripheral region, comprising: a sensing element located in the sensing region, wherein the sensing element includes an upper electrode, a lower electrode, and a photoelectric conversion layer located between the upper electrode and the lower electrode; pads located in the pad region and electrically connected to the sensing element; strip-shaped metal located in the peripheral region, and the extending direction of the strip-shaped metal is parallel to the extending direction of the pads; and a common electrode located in the sensing region and electrically connected to the sensing element, wherein the strip-shaped metal is located between the side of the sensing device closest to the pads and the pad region provided with the pads, the strip-shaped metal is physically separated from the pads, and the strip-shaped metal includes a first part belonging to the same film layer as the lower electrode and / or a second part belonging to the same film layer as the common electrode.

2. The sensing device according to claim 1, wherein the length of the strip-shaped metal is greater than the width.

3. The sensing device according to claim 1, wherein the strip-shaped metal is aligned with the pads.

4. The sensing device according to claim 1, wherein the strip-shaped metal is offset from the pads.

5. The sensing device according to claim 1, wherein the pitch of the strip-shaped metal is less than or equal to the pitch of the pads.

6. The sensing device according to claim 1, wherein the width of the strip-shaped metal is less than the spacing between the pads.

7. The sensing device according to claim 1, wherein the setting density of the strip-shaped metal is greater than or equal to the setting density of the pads.

8. The sensing device according to claim 1, wherein the strip-shaped metal has a single-layer or double-layer structure.

9. The sensing device according to claim 1, wherein the extending direction of the strip-shaped metal is perpendicular to the side of the sensing device.

10. The sensing device according to claim 1, wherein the width of the strip-shaped metal is 1 μm to 50 μm.

11. The sensing device according to claim 1, wherein the minimum distance from the strip-shaped metal to the side of the sensing device is 50 μm to 500 μm.

12. The sensing device according to claim 1, wherein the pad region surrounds a part of the sensing region.

13. The sensing device according to claim 12, wherein the peripheral region surrounds the pad region and the sensing region.

14. The sensing device according to claim 1, wherein the pads and the strip-shaped metal are disposed on the same barrier layer, insulating layer, and substrate.

15. The sensing device according to claim 1, further comprising a switching element electrically connected to the sensing element, and the first part of the strip-shaped metal belongs to the same film layer as the source electrode of the switching element.

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