Wafer electroplating post-processing device and wafer electroplating post-processing method

Abstract

The present application relates to wafer electroplating post-processing technical field, especially to a kind of wafer electroplating post-processing device, it includes cleaning tank and spray component. Wherein, the tank bottom of cleaning tank is equipped with multiple bubble holes and multiple liquid inlet holes, bubble hole is used for bubbling, liquid inlet hole is used for liquid inlet and drainage, carrier with wafer and cover plate can be vertically inserted in cleaning tank, so that wafer can be completely immersed in cleaning tank in cleaning fluid. Spray component includes first spray pipe and second spray pipe, first spray pipe is used to spray cleaning fluid towards the assembly gap of cover plate and carrier, second spray pipe is used to spray cleaning fluid towards wafer, the spray angle of first spray pipe and second spray pipe can be adjusted. The present application also provides a kind of wafer electroplating post-processing method. The wafer electroplating post-processing device described above uses the wafer electroplating post-processing method described above, that is, while ensuring that electrolyte is completely removed, water consumption is saved, and pollution control costs are reduced.

Description

Technical Field

[0001] This invention relates to the field of wafer electroplating post-processing technology, and more particularly to a wafer electroplating post-processing apparatus and a wafer electroplating post-processing method. Background Technology

[0002] With the rapid development of advanced packaging, many process routes require wafer electroplating. After electroplating, residual electrolyte remains on the carrier and the product. This electrolyte contains acids, which are corrosive to the plated metal, leading to abnormalities such as oxidation and localized roughness in the product plating. Furthermore, the electrolyte residue on the carrier, containing inorganic salts, can crystallize in the gaps between the carrier and the cover plate, eventually damaging both and potentially causing cracks in subsequent products. Therefore, post-processing is necessary after wafer electroplating to remove residual electrolyte from the wafer, cover plate, and carrier.

[0003] The existing post-plating treatment for wafers uses pure water and nitrogen bubbling for cleaning. This method is time-consuming, the carrier and cover plate are not thoroughly cleaned, the coating on the wafer surface is prone to oxidation, and it consumes a lot of water, resulting in the discharge of a large amount of heavy metal wastewater, which puts a burden on wastewater treatment and has a high overall cost.

[0004] Therefore, there is an urgent need for a wafer electroplating post-processing device and a wafer electroplating post-processing method to solve the above problems. Summary of the Invention

[0005] The purpose of this invention is to provide a wafer electroplating post-processing device that ensures thorough cleaning while saving cleaning water and reducing wastewater treatment costs.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] A wafer electroplating post-processing apparatus, comprising:

[0008] The cleaning tank has multiple bubbling holes and multiple liquid inlet holes at the bottom. The bubbling holes are used for bubbling, and the liquid inlet holes are used for liquid inlet and outlet. A carrier carrying a wafer and a cover plate can be vertically inserted into the cleaning tank so that the wafer can be completely immersed in the cleaning solution in the cleaning tank.

[0009] A spray assembly includes a first spray pipe and a second spray pipe. The first spray pipe is used to spray the cleaning fluid into the assembly gap between the cover plate and the carrier, and the second spray pipe is used to spray the cleaning fluid into the wafer. The spray angles of both the first and second spray pipes are adjustable.

[0010] As a preferred embodiment of a wafer electroplating post-processing apparatus, it further includes an overflow tank, which is disposed on the side of the cleaning tank so that the cleaning solution can overflow into the overflow tank.

[0011] As a preferred embodiment of a wafer electroplating post-processing apparatus, the cleaning tank and the overflow tank are arranged with the same wall. The cleaning tank includes an overflow sidewall, which is disposed between the cleaning tank and the overflow tank. The lowest point of the upper edge of the overflow sidewall is lower than the lowest point of the upper edge of the other sidewalls of the cleaning tank.

[0012] As a preferred embodiment of a wafer electroplating post-processing device, the length directions of both the first spray pipe and the second spray pipe are parallel to the surface of the wafer.

[0013] As a preferred embodiment of a wafer electroplating post-processing device, the first spray pipe has a plurality of first spray holes along its own length direction, and the plurality of first spray holes are evenly spaced.

[0014] The second spray pipe has multiple second spray holes along its length, and the multiple second spray holes are evenly spaced.

[0015] As a preferred embodiment of a wafer electroplating post-processing device, the diameter of the first spray hole gradually increases along its own axial direction toward the outside of the tube, and the diameter of the second spray hole gradually increases along its own axial direction toward the outside of the tube.

[0016] As a preferred embodiment of a wafer electroplating post-processing device, it further includes an air inlet pipe, a liquid inlet pipe, and a liquid outlet pipe. The air inlet pipe can be connected to all of the bubble holes, and one of the liquid inlet pipe and the liquid outlet pipe can be selectively connected to all of the liquid inlet holes.

[0017] As a preferred embodiment of a wafer electroplating post-processing device, it further includes a shut-off valve and a three-way valve. The shut-off valve is disposed on the air inlet pipe, and the three-way valve includes a first port, a second port, and a third port. The first port is connected to the liquid inlet hole, the second port is connected to the liquid inlet pipe, and the third port is connected to the liquid outlet pipe.

[0018] As a preferred embodiment of a wafer electroplating post-processing device, it further includes a liquid inlet pump, which is installed on the liquid inlet pipeline.

[0019] Another objective of this invention is to provide a post-plating treatment method for wafers that can save water consumption and reduce pollution control costs.

[0020] To achieve this objective, the present invention adopts the following technical solution:

[0021] A wafer post-plating treatment method, applied to the aforementioned wafer post-plating treatment apparatus, the wafer post-plating treatment method comprising:

[0022] S1: Preparation stage: Adjust the spray angle of the first spray pipe and the second spray pipe according to the size of the carrier, cover plate and wafer. Fill the cleaning tank with cleaning liquid. The robot arm inserts the carrier carrying the cover plate and the wafer into the cleaning tank.

[0023] S2: Bubbling Slow Liquid Inlet: Liquid is introduced through the inlet hole accompanied by bubbling, and maintained for the first preset time;

[0024] S3: Quick Drain Spray: Turn off the bubbling, turn on the spray assembly and quickly drain the liquid from the inlet hole;

[0025] S4: Spraying and rapid liquid inlet bubbling: After the drainage is completed, spraying continues and liquid is rapidly inlet, accompanied by bubbling, for the second preset time.

[0026] S5: Repeat steps S2, S3, and S4 as needed;

[0027] S6: Completion stage: The robotic arm removes the carrier containing the cover plate and the wafer, and the cleaning tank quickly discharges the cleaning fluid.

[0028] The beneficial effects of this invention are:

[0029] This invention provides a wafer electroplating post-processing apparatus, including a cleaning tank and a spray assembly. The cleaning tank has multiple bubbling holes and multiple liquid inlet holes at its bottom. The bubbling holes are used for bubbling, and the liquid inlet holes are used for liquid inlet and outlet. A carrier holding the wafer and a cover plate can be vertically inserted into the cleaning tank so that the wafer can be completely immersed in the cleaning solution. The spray assembly includes a first spray pipe and a second spray pipe. The first spray pipe sprays cleaning solution towards the assembly gap between the cover plate and the carrier, and the second spray pipe sprays cleaning solution towards the wafer. The spray angles of both the first and second spray pipes are adjustable. This wafer electroplating post-processing apparatus not only uses bubbling water inlet to clean the carrier, cover plate, and wafer, but also incorporates a spray assembly. The spraying process allows for faster removal of residual electrolyte, especially targeting the difficult-to-clean gap between the cover plate and the carrier, and rinsing the wafer, ensuring thorough cleaning. Continuous spraying of the wafer during the replacement of the cleaning solution in the cleaning tank can also prevent the wafer surface from coming into contact with air and forming an oxide layer.

[0030] This invention also provides a wafer electroplating post-processing method, applied to the aforementioned wafer electroplating post-processing apparatus. The wafer electroplating post-processing method includes: S1: Preparation stage: Adjust the spray angles of the first and second spray pipes according to the dimensions of the carrier, cover plate, and wafer. Fill the cleaning tank with cleaning fluid. Insert the carrier carrying the cover plate and wafer into the cleaning tank using a robotic arm. S2: Bubbling and slow liquid inlet: Inlet the liquid through the inlet hole while bubbling, maintaining this for a first preset time. S3: Spraying and rapid draining: Turn off the bubbling, turn on the spray assembly, and quickly drain the liquid through the inlet hole. S4: Spraying and rapid liquid inlet with bubbling: After draining, continue spraying and rapidly inlet the liquid while bubbling, maintaining this for a second preset time. S5: Repeat steps S2, S3, and S4 as needed. S6: Completion stage: Remove the carrier carrying the cover plate and wafer using a robotic arm, and quickly drain the cleaning fluid from the cleaning tank. By using the above-described post-plating treatment method for wafers, water consumption can be saved and pollution control costs can be reduced while ensuring thorough removal of electrolyte. Attached Figure Description

[0031] Figure 1 This is a cross-sectional view of the wafer electroplating post-processing apparatus provided in an embodiment of the present invention;

[0032] Figure 2 This is a top view of the wafer electroplating post-processing apparatus provided in an embodiment of the present invention;

[0033] Figure 3 This is a schematic diagram of the structure of the first spray pipe provided in an embodiment of the present invention;

[0034] Figure 4 This is a schematic flowchart of the wafer electroplating post-processing method provided in an embodiment of the present invention.

[0035] In the picture:

[0036] 1. Cleaning tank; 11. Bubbling hole; 12. Liquid inlet; 13. Overflow sidewall;

[0037] 2. First spray pipe; 21. First spray hole; 3. Second spray pipe; 31. Second spray hole; 4. Overflow trough;

[0038] 100, Wafer; 200, Cover plate; 300, Carrier; 400, Cleaning fluid; 500, First spray zone; 600, Second spray zone. Detailed Implementation

[0039] The technical solution of the present invention will be further described below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the present invention are shown in the accompanying drawings, not all of them.

[0040] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections or detachable connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0041] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0042] The existing post-processing of wafer electroplating uses pure water and nitrogen bubbling for cleaning. This method is time-consuming, the carrier and cover plate are not thoroughly cleaned, the wafer coating surface is prone to oxidation, water consumption is large, and a large amount of heavy metal wastewater is discharged, which puts a burden on wastewater treatment and results in high overall costs.

[0043] Therefore, this embodiment provides a wafer electroplating post-processing device that can save cleaning water and reduce wastewater treatment costs while ensuring thorough cleaning.

[0044] like Figures 1-2 As shown, the wafer electroplating post-processing device includes a cleaning tank 1 and a spray assembly.

[0045] The cleaning tank 1 has multiple bubbling holes 11 and multiple liquid inlet holes 12 at its bottom. The bubbling holes 11 are used for bubbling, and the liquid inlet holes 12 are used for liquid inlet and outlet. A carrier 300 carrying the wafer 100 and the cover plate 200 can be vertically inserted into the cleaning tank 1 so that the wafer 100 can be completely immersed in the cleaning solution 400 in the cleaning tank 1. Preferably, the multiple bubbling holes 11 and the multiple liquid inlet holes 12 are arranged alternately to ensure the uniformity of bubbling and liquid inlet / outlet. Optionally, the cleaning solution 400 is pure water.

[0046] Preferably, the wafer electroplating post-processing apparatus further includes an overflow tank 4, which is disposed on the side of the cleaning tank 1 so that the cleaning solution 400 can overflow into the overflow tank 4. When the cleaning solution 400 in the cleaning tank 1 is full, the cleaning solution 400 in the cleaning tank 1 will be disturbed and renewed from bottom to top due to the bubbling at the bubbling hole 11 and the liquid inlet at the liquid inlet 12, and the upper cleaning solution 400 will overflow into the overflow tank 4.

[0047] To save space, preferably, the cleaning tank 1 and the overflow tank 4 are arranged on the same wall. The cleaning tank 1 includes an overflow sidewall 13, which is arranged between the cleaning tank 1 and the overflow tank 4. The lowest point of the upper edge of the overflow sidewall 13 is lower than the lowest point of the upper edge of the other sidewalls of the cleaning tank 1, which ensures that the cleaning liquid 400 does not overflow from other sides.

[0048] Preferably, the wafer electroplating post-processing device further includes an air inlet pipe, a liquid inlet pipe, and a liquid outlet pipe. The air inlet pipe can be connected to all the bubble holes 11, and the liquid inlet pipe and the liquid outlet pipe can be selectively connected to all the liquid inlet holes 12.

[0049] To control bubbling, liquid inlet and liquid outlet, the wafer electroplating post-processing device preferably includes a shut-off valve and a three-way valve. The shut-off valve is installed on the air inlet pipe, and the three-way valve includes a first port, a second port and a third port. The first port is connected to the liquid inlet hole 12, the second port is connected to the liquid inlet pipe, and the third port is connected to the liquid outlet pipe.

[0050] Preferably, the wafer electroplating post-processing device further includes a liquid inlet pump, which is installed on the liquid inlet pipeline to provide liquid inlet power.

[0051] The spray assembly includes a first spray pipe 2 and a second spray pipe 3. The first spray pipe 2 is used to spray cleaning fluid 400 into the assembly gap between the cover plate 200 and the carrier 300, and the second spray pipe 3 is used to spray cleaning fluid 400 into the wafer 100. The spray angles of the first spray pipe 2 and the second spray pipe 3 are adjustable, so as to adapt to carriers 300, cover plates 200 and wafers 100 of different sizes and styles.

[0052] Preferably, the length directions of the first spray pipe 2 and the second spray pipe 3 are both parallel to the surface of the wafer 100 to ensure that the spraying force on all parts of the wafer 100 surface remains consistent.

[0053] To ensure a more uniform amount of cleaning solution 400 sprayed onto wafer 100, preferably, the second spray pipe 3 has multiple second spray holes 31 along its length, and the multiple second spray holes 31 are evenly spaced. Similarly, as Figure 3 As shown, the first spray pipe 2 has multiple first spray holes 21 along its own length direction, and the multiple first spray holes 21 are evenly spaced.

[0054] To ensure that the cleaning fluid 400 is sprayed radially from the spray holes, thereby increasing the coverage area of ​​the cleaning fluid 400, preferably, the diameter of the first spray holes 21 gradually increases along its own axial direction towards the outside of the tube, so that the multiple first spray holes 21 form a first spray area 500, covering the assembly gap between the cover plate 200 and the carrier 300. Similarly, the diameter of the second spray holes 31 gradually increases along its own axial direction towards the outside of the tube, so that the multiple second spray holes 31 form a second spray area 600, completely covering the wafer 100.

[0055] This wafer electroplating post-processing device not only cleans the carrier 300, cover plate 200, and wafer 100 using a bubbling water inlet method, but also incorporates a spray assembly. The spray system more quickly removes residual electrolyte, especially targeting the difficult-to-clean gaps between the cover plate 200 and carrier 300, and rinses the wafer 100 to ensure thorough cleaning. When changing the cleaning solution 400 in the cleaning tank 1, the spray also prevents the wafer 100 surface from contacting air and forming an oxide layer.

[0056] like Figure 4 As shown, the wafer post-plating treatment method provided in this embodiment is applied to the above-mentioned wafer post-plating treatment apparatus. The wafer post-plating treatment method includes:

[0057] S1: Preparation stage: Adjust the spray angle of the first spray pipe 2 and the second spray pipe 3 according to the size of the carrier 300, the cover plate 200 and the wafer 100. The cleaning tank 1 is filled with cleaning liquid 400. The robot arm inserts the carrier 300 carrying the cover plate 200 and the wafer 100 into the cleaning tank 1.

[0058] S2: Bubbling Slow Liquid Inlet: Liquid is introduced through the inlet hole 12 accompanied by bubbling, and maintained for the first preset time.

[0059] S3: Spray quick drain: Turn off the bubbling, turn on the spray assembly and quickly drain the liquid from the inlet hole 12.

[0060] S4: Spraying and rapid liquid inlet with bubbling: After the drainage is completed, spraying continues and liquid is rapidly introduced, accompanied by bubbling, for the second preset duration.

[0061] S5: Repeat steps S2, S3, and S4 as needed.

[0062] S6: Completion stage: The robotic arm removes the carrier 300 containing the cover plate 200 and the wafer 100, and the cleaning tank 1 quickly discharges the cleaning fluid 400.

[0063] In existing technologies, cleaning the carrier 300 containing the cover plate 200 and the wafer 100 requires approximately 3-4 water changes, consuming the liquid volume of 3-4 tanks. However, using the wafer post-plating treatment device of this embodiment, following the aforementioned wafer post-plating treatment method, only requires approximately 2 water changes, saving nearly half the liquid volume and reducing wastewater generation by almost half. Therefore, this wafer post-plating treatment device, combined with the aforementioned wafer post-plating treatment method, effectively saves water consumption, reduces pollution control costs, prevents oxidation of the wafer 100 during the process, and ensures product quality while ensuring thorough removal of electrolyte.

[0064] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A wafer post-electroplating treatment apparatus, characterized by, The utility model relates to a kind of cleaning tank and spray assembly, including: Cleaning tank (1), the tank bottom of the cleaning tank (1) is equipped with multiple bubble holes (11) and multiple liquid inlet holes (12), the bubble hole (11) is used for bubbling, the liquid inlet hole (12) is used for liquid inlet and drainage, carrier (300) loaded with wafer (100) and cover plate (200) can be vertically inserted in the cleaning tank (1), so that the wafer (100) can be completely immersed in cleaning liquid (400) in the cleaning tank (1); Spray assembly, the spray assembly includes first spray pipe (2) and second spray pipe (3), the first spray pipe (2) is used to spray cleaning liquid (400) to the assembly gap of cover plate (200) and carrier (300), the second spray pipe (3) is used to spray cleaning liquid (400) to wafer (100), the spray angle of the first spray pipe (2) and the second spray pipe (3) can be adjusted; The first spray pipe (2) is equipped with multiple first spray holes (21) along the length direction of itself, the first spray hole (21) gradually increases along the axial direction of itself to the outer diameter of pipe, so that multiple first spray holes (21) form first spray area (500), cover the assembly gap of cover plate (200) and carrier (300); The second spray pipe (3) is equipped with multiple second spray holes (31) along the length direction of itself, the second spray hole (31) gradually increases along the axial direction of itself to the outer diameter of pipe, so that multiple second spray holes (31) form second spray area (600), completely cover wafer (100).

2. The wafer post-plating treatment apparatus according to claim 1, wherein It also includes overflow tank (4), the overflow tank (4) is arranged at the side of the cleaning tank (1), so that the cleaning liquid (400) can overflow into the overflow tank (4).

3. The wafer post-plating treatment apparatus according to claim 2, wherein The cleaning tank (1) and the overflow tank (4) are co-walled, the cleaning tank (1) includes overflow side wall (13), the overflow side wall (13) is arranged between the cleaning tank (1) and the overflow tank (4), and the lowest point of the upper edge of the overflow side wall (13) is lower than the lowest point of the upper edge of the other side wall of the cleaning tank (1).

4. The wafer post-plating treatment apparatus of claim 1, wherein, The length direction of the first spray pipe (2) and the second spray pipe (3) is parallel to the plate surface of wafer (100).

5. The wafer post-plating treatment apparatus of claim 1, wherein, Multiple first spray holes (21) are uniformly arranged; multiple second spray holes (31) are uniformly arranged.

6. The wafer post-plating treatment apparatus of claim 1, wherein, It also includes air inlet pipeline, liquid inlet pipeline and liquid outlet pipeline, the air inlet pipeline can be communicated with all bubble holes (11), and the liquid inlet pipeline and the liquid outlet pipeline can be selectively communicated with all liquid inlet holes (12).

7. The wafer post-plating treatment apparatus according to claim 6, wherein It also includes stop valve and three-way valve, the stop valve is arranged on the air inlet pipeline, the three-way valve includes first port, second port and third port, the first port is communicated with the liquid inlet hole (12), the second port is communicated with the liquid inlet pipeline, and the third port is communicated with the liquid outlet pipeline.

8. The wafer post-plating treatment apparatus according to claim 6, wherein It also includes liquid inlet pump, and the liquid inlet pump is arranged on the liquid inlet pipeline.

9. A wafer post-electroplating treatment method, characterized by, The wafer electroplating post-processing device is applied to the wafer electroplating post-processing method, and the wafer electroplating post-processing method comprises the following steps of: S1: preparation stage: adjusting the spraying angle of the first spraying pipe (2) and the second spraying pipe (3) according to the size of the carrier (300), the cover plate (200) and the wafer (100), filling the cleaning tank (1) with cleaning liquid (400), and inserting the carrier (300) carrying the cover plate (200) and the wafer (100) into the cleaning tank (1) by the manipulator; S2: slow liquid feeding with bubbling: feeding liquid from the liquid inlet hole (12) with bubbling, and keeping for a first preset time; S3: spraying and rapid liquid discharge: closing the bubbling, opening the spraying assembly and rapidly discharging liquid from the liquid inlet hole (12); S4: spraying, rapid liquid feeding and bubbling: continuously spraying and rapidly feeding liquid after the liquid is discharged, and keeping for a second preset time with bubbling; S5: repeating steps S2, S3 and S4 as needed; S6: completion stage: moving away the carrier (300) carrying the cover plate (200) and the wafer (100) by the manipulator, and rapidly discharging the cleaning liquid (400) from the cleaning tank (1).

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