Display panel, preparation method thereof and display device

Abstract

The application provides a display panel, a preparation method thereof and a display device. The display panel comprises a substrate and a pixel definition layer arranged on the substrate. The pixel definition layer comprises a plurality of isolation portions. Adjacent isolation portions are provided with a first pixel opening. A light-emitting functional layer and a first quantum dot layer are arranged in the first pixel opening. The isolation portions are used for isolating the light-emitting functional layer and the first quantum dot layer in different first pixel openings. The display performance of the display panel can be improved by using the scheme of the application.

Description

Technical Field

[0001] This invention relates to a display panel, its manufacturing method, and a display device, belonging to the field of display technology. Background Technology

[0002] Compared to traditional LCD (Liquid Crystal Display) technology, OLED (Organic Light-Emitting Diode) offers advantages such as active light emission, thinness, fast response time, high stability, low driving voltage, a wide variety of materials, and high contrast, leading to its widespread adoption. In recent years, with the development of QD (Quantum Dot) material technology, QD-OLED display panels have gained favor in the display panel industry for their high-purity color gamut and other performance characteristics, and are hailed as the next-generation display technology.

[0003] However, due to the limitations of the color conversion rate of QD materials, there is still room for improvement in the display performance of QD-OLED display panels. Summary of the Invention

[0004] This invention provides a display panel, its manufacturing method, and a display device to address the issue that there is still room for improvement in the display performance of QD-OLED display panels.

[0005] In a first aspect, embodiments of the present invention provide a display panel, which includes a substrate and a pixel definition layer disposed on the substrate;

[0006] The pixel definition layer includes multiple isolation portions, and a first pixel opening is provided between adjacent isolation portions. A light-emitting functional layer and a first quantum dot layer are disposed in the first pixel opening. The first quantum dot layer is disposed on the side of the light-emitting functional layer away from the substrate. The isolation portions are used to separate the light-emitting functional layer and the first quantum dot layer in different first pixel openings.

[0007] Based on the above-described display panel, optionally, the light-emitting functional layer includes a first portion located at the bottom of the first pixel opening and a second portion located on the sidewall of the isolation portion, wherein the first portion and the second portion of the light-emitting functional layer form a groove, and at least a portion of the first quantum dot layer is located inside the groove.

[0008] Based on the above-described display panel, optionally, the shape of the cross-section of the isolation portion along the direction perpendicular to the substrate is a trapezoid.

[0009] Based on the aforementioned display panel, optionally, the height of the isolation portion is greater than or equal to the height of the first quantum dot layer.

[0010] Based on the aforementioned display panel, optionally, the material of the pixel definition layer is polyimide.

[0011] Based on the aforementioned display panel, optionally, the height of the isolation portion is at least 10.2 micrometers.

[0012] Based on the above-described display panel, optionally, the substrate has a second pixel opening, in which a second quantum dot layer is disposed; the second pixel opening is located on the side of the light-emitting functional layer away from the first pixel opening.

[0013] Optionally, based on the aforementioned display panel, the thickness of the substrate is 10 micrometers.

[0014] Optionally, based on the aforementioned display panel, the substrate is made of polyimide.

[0015] Based on the aforementioned display panel, optionally, an encapsulation layer is provided between the light-emitting functional layer and the first quantum dot layer.

[0016] Based on the above-described display panel, optionally, the thickness of the encapsulation layer is less than 2 micrometers; based on the above-described display panel, optionally, the encapsulation layer extends to the outside of the first pixel opening and is continuous between adjacent first pixel openings.

[0017] Based on the aforementioned display panel, optionally, the encapsulation layer includes multiple stacked sub-encapsulation layers, each made of a different material.

[0018] Based on the above display panel, optionally, the multilayer sub-encapsulation layer includes an aluminum oxide layer, a titanium oxide layer, and a silicon nitride layer that are gradually moved away from the light-emitting functional layer.

[0019] In a second aspect, embodiments of the present invention also provide a display device, which includes a display panel as described in any one of the first aspects.

[0020] Thirdly, embodiments of the present invention also provide a method for manufacturing a display panel, comprising:

[0021] A pixel definition layer is formed on the substrate;

[0022] The pixel definition layer is etched to form a plurality of isolation portions and a first pixel opening located between adjacent isolation portions;

[0023] A light-emitting functional layer and a first quantum dot layer are sequentially formed in each of the first pixel openings, such that the light-emitting functional layer and the first quantum dot layer in different first pixel openings are separated by the isolation portion.

[0024] Based on the above-described method for manufacturing a display panel, optionally, forming a pixel definition layer on the substrate includes:

[0025] A pixel definition layer is formed on the substrate using a slot coating process;

[0026] The etching of the pixel definition layer to form a plurality of isolation portions and a first pixel opening located between adjacent isolation portions includes:

[0027] The pixel definition layer is etched using a pre-prepared hard mask to form multiple isolation portions and a first pixel opening located between adjacent isolation portions.

[0028] The display panel, its fabrication method, and display device provided by this invention include a substrate and a pixel definition layer disposed on the substrate. The pixel definition layer includes multiple isolation portions, with a first pixel opening between adjacent isolation portions. A light-emitting functional layer and a first quantum dot layer on the side of the light-emitting functional layer away from the substrate are disposed within the first pixel opening. The isolation portions separate the light-emitting functional layer and the first quantum dot layer in different first pixel openings. This arrangement, by placing both the light-emitting functional layer and the first quantum dot layer within the same first pixel opening corresponding to the same pixel definition layer, is advantageous compared to the traditional method of encapsulating the light-emitting functional layer and then fabricating a film structure for storing the first quantum dot layer. This facilitates the fabrication of a first quantum dot layer with an effective thickness, thereby improving the color conversion rate. Simultaneously, it shortens the overall light emission path, facilitating light extraction and improving light emission efficiency. Therefore, this solution can improve the display performance of the display panel. Attached Figure Description

[0029] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention. Furthermore, these drawings and textual descriptions are not intended to limit the scope of the inventive concept in any way, but rather to illustrate the concept of the invention to those skilled in the art by reference to specific embodiments.

[0030] Figure 1 This is a partial structural diagram of an existing QD-OLED display panel;

[0031] Figure 2 This is a schematic diagram of the structure of a display panel according to an embodiment of the present invention;

[0032] Figure 3 This is a magnified view of the opening of the first pixel in one embodiment of the present invention;

[0033] Figure 4 This is a magnified view of the opening of the first pixel in another embodiment of the present invention;

[0034] Figure 5 This is a schematic diagram of another display panel structure according to an embodiment of the present invention;

[0035] Figure 6 This is a schematic diagram of another display panel structure according to an embodiment of the present invention;

[0036] Figure 7 This is a schematic flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention.

[0037] Explanation of reference numerals in the attached figures:

[0038] 1-Substrate; 2-First pixel definition layer; 3-Light-emitting functional layer; 4-First encapsulation layer;

[0039] 5-Second pixel definition layer; 6-Quantum dot layer; 7-Second encapsulation layer;

[0040] 10 - Substrate; 20 - Pixel definition layer; 201 - Isolation layer; 30 - Light-emitting functional layer;

[0041] 301 - Part 1; 302 - Part 2; 303 - Part 3; 40 - First quantum dot layer;

[0042] 50 - Encapsulation layer; 501 - Aluminum oxide layer; 502 - Titanium oxide layer;

[0043] 503 - Silicon nitride layer; 60 - Driver circuit layer; 70 - Filter layer;

[0044] 701 - Filter section; 702 - Shielding section; 80 - Second quantum dot layer. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below in conjunction with the embodiments of this invention. Obviously, the described embodiments are only some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0046] Application Overview

[0047] Reference Figure 1 , Figure 1 This is a partial structural diagram of an existing QD-OLED display panel. Figure 1In the display panel shown, a first pixel definition layer 2 is disposed above the substrate 1. The first pixel definition layer 2 forms multiple pixel openings, and a light-emitting functional layer 3 is disposed in each pixel opening. A first encapsulation layer 4 is disposed above the first pixel definition layer 2 and the light-emitting functional layer 3. A second pixel definition layer 5 is disposed above the first encapsulation layer 4. The second pixel definition layer 5 forms multiple quantum dot storage areas (commonly referred to as QD banks in the industry). The quantum dot materials stored in the quantum dot storage areas form a quantum dot layer 6. A second encapsulation layer 7 is disposed above the second pixel definition layer 5.

[0048] The quantum dot layer 6 receives light emitted from the light-emitting functional layer 3 and is then excited to emit light of a specific color (therefore, the quantum dot layer 6 can also be called a photoluminescent layer). Since the color of the light emitted by the quantum dot layer 6 when excited can be different from the color of the light received, the quantum dot layer 6 can realize the conversion of the emitted light color.

[0049] The inventors discovered that the color conversion rate of quantum dot layer 6 is related to its thickness (the thickness of quantum dot layer 6, i.e., the distance between the upper and lower surfaces of quantum dot layer 6). Typically, quantum dot layer 6 needs to be sufficiently thick to achieve a high color conversion rate (which ultimately affects the display performance of the display panel). However, in... Figure 1 Based on the shown display panel structure, increasing the thickness of quantum dot layer 6 would also increase the overall thickness of the display panel, potentially failing to meet practical requirements. Furthermore, the fabrication... Figure 1 When preparing the display panel shown, the quantum dot storage area (QD bank) and quantum dot layer 6 need to be prepared after the first encapsulation layer 4. In this case, the light emitted by the light-emitting functional layer 3 has a long attenuation path in the encapsulation layer, which is not conducive to the color conversion of the quantum dot layer 6.

[0050] To address the aforementioned problems, embodiments of the present invention propose a display panel, a method for manufacturing the same, and a display device. By improving the film layer structure of the display panel, the color conversion rate is increased and the light path is shortened without increasing or significantly increasing the thickness of the display panel, thereby improving the display performance of the display panel. The following exemplary embodiments provide a non-limiting description of the specific solution.

[0051] Exemplary display panel

[0052] Reference Figure 2 , Figure 2 This is a schematic diagram of the structure of a display panel according to an embodiment of the present invention. Figure 2 As shown, the display panel includes: a substrate 10 and a pixel definition layer 20 disposed on the substrate 10;

[0053] The pixel definition layer 20 includes a plurality of isolation portions 201. A first pixel opening is provided between adjacent isolation portions 201. A light-emitting functional layer 30 and a first quantum dot layer 40 are disposed in the first pixel opening. The first quantum dot layer 40 is disposed on the side of the light-emitting functional layer 30 away from the substrate 10. The isolation portions 201 are used to separate the light-emitting functional layer 30 and the first quantum dot layer 40 in different first pixel openings.

[0054] In the embodiments of the present invention, unless otherwise specified, "multiple" refers to at least two.

[0055] Furthermore, the first quantum dot layer 40 can be similar to Figure 1 The film shown is formed from quantum dots.

[0056] By separating the light-emitting functional layer 30 and the first quantum dot layer 40 in different first pixel openings through the isolation section 201, the convergence of different colored lights can be reduced, thereby ultimately improving the color purity of the emitted light.

[0057] Based on the above scheme, by setting both the light-emitting functional layer and the first quantum dot layer in the first pixel opening corresponding to the same pixel definition layer, compared to the prior art of encapsulating the light-emitting functional layer and then fabricating the film structure for storing the first quantum dot layer (i.e., ... Figure 1 The scheme of defining the second pixel layer (5) in the first quantum dot layer is beneficial for preparing a first quantum dot layer of effective thickness, thereby improving the color conversion rate; at the same time, it can also shorten the overall light emission path, which is beneficial for light extraction and improving light emission efficiency. Therefore, this scheme can improve the display performance of the display panel.

[0058] It should be noted that, in order to ensure that the first quantum dot layer 40 in the first pixel opening has a sufficiently effective thickness (the thickness of the first quantum dot layer 40, i.e., the distance between the upper and lower surfaces of the first quantum dot layer 40), when preparing the pixel definition layer 20, a larger thickness of pixel definition layer 20 can be formed compared to the conventional approach in the prior art. Consequently, when the pixel definition layer 20 is etched to form the first pixel opening, the depth of the first pixel opening is greater, and thus a larger thickness of the first quantum dot layer 40 can be set in the first pixel opening.

[0059] Reference Figure 3 , Figure 3 This is a magnified view of the opening of the first pixel in one embodiment. For example... Figure 3As shown, in some embodiments, the light-emitting functional layer 30 includes a first portion 301 located at the bottom of the first pixel opening and a second portion 302 located on the sidewall of the isolation portion 201. The first portion 301 and the second portion 302 of the light-emitting functional layer 30 form a groove, and at least a portion of the first quantum dot layer 40 is located inside the groove. Optionally, the light-emitting functional layer 30 also includes a third portion 303 located on the upper side of the isolation portion 201. This provides a certain margin for the light-emitting functional layer 30, thereby better ensuring the continuity of the first portion 301 and the second portion 302 during the fabrication of the light-emitting functional layer 30.

[0060] By forming a groove in the light-emitting functional layer 30 and placing at least a portion of the first quantum dot layer 40 (i.e., the portion near the substrate 10) inside the groove formed in the light-emitting functional layer 30, the thickness of the first quantum dot layer 40 can be further increased, thereby further improving the color conversion efficiency.

[0061] Based on the above scheme, optionally, the cross-sectional area of ​​the first pixel opening on the side near the substrate 10 along the plane parallel to the substrate 10 is smaller than the cross-sectional area on the side away from the substrate along the plane parallel to the substrate 10. Thus, when the light-emitting functional layer 30 is fabricated at the bottom of the first pixel opening and on the sidewall of the isolation portion 201, it is beneficial to reduce the ramp angle of the film layer on the sidewall of the isolation portion 201, thereby reducing the risk of breakage and ensuring the continuity of the light-emitting functional layer 30.

[0062] For example, such as Figure 2 As shown, in some embodiments, the shape of the cross-section of the isolation portion 201 along the direction perpendicular to the substrate 10 is a trapezoid. Of course, it can be understood that, provided that "the area of ​​the cross-section along the plane parallel to the substrate 10 on the side of the first pixel opening closest to the substrate is smaller than the area of ​​the cross-section along the plane parallel to the substrate 10 on the side furthest from the substrate", the shape of the cross-section of the isolation portion 201 along the direction perpendicular to the substrate 10 can also be other shapes. For example, the sidewall of the isolation portion 201 can be a curved surface, that is, the shape of the cross-section of the sidewall of the isolation portion 201 along the direction perpendicular to the substrate 10 can be a curve.

[0063] In addition, in some embodiments, the height of the isolation section 201 may be greater than or equal to the height of the first quantum dot layer 40.

[0064] The height of the isolation portion 201 refers to the distance from the upper side of the isolation portion 201 (i.e., the side away from the substrate 10) to the lower reference plane (e.g., the upper side of the substrate 10); similarly, the height of the first quantum dot layer 40 refers to the distance from the upper side of the first quantum dot layer 40 (i.e., the side away from the substrate 10) to the same lower reference plane.

[0065] Based on this, when the height of the isolation section 201 is greater than or equal to the height of the first quantum dot layer 40, the first quantum dot layer 40 in different first pixel openings can be separated by the isolation section 201 alone.

[0066] In some embodiments, the height of the isolation portion 201 is at least 10.2 micrometers (μm). By increasing the height of the isolation portion 201, the thickness of the first quantum dot layer in the first pixel opening between adjacent isolation portions 201 can be increased, thereby improving the color conversion rate.

[0067] In addition, in some embodiments, reference is made to Figure 2 As shown, an encapsulation layer 50 is also disposed between the light-emitting functional layer 30 and the first quantum dot layer 40. The encapsulation layer 50 can isolate water and oxygen to protect the light-emitting functional layer 30, and can also restrict the position of materials in the first quantum dot layer 40.

[0068] Based on this, such as Figure 2 As shown, if an encapsulation layer 50 is provided between the light-emitting functional layer 30 and the first quantum dot layer 40, the height of the isolation portion 201 can also be less than the height of the first quantum dot layer 40. By extending the encapsulation layer 50 to the outside of the first pixel opening, the encapsulation layer 50 and the isolation portion 201 can separate the first quantum dot layers 40 in different first pixel openings.

[0069] Wherein, if the encapsulation layer 50 extends outside the first pixel opening, then as Figure 2 As shown, it can be further configured such that the encapsulation layer 50 is continuous between adjacent first pixel openings. In this way, by forming the encapsulation layer 50 as a continuous film, the encapsulation effect can be better guaranteed, and it is also easier to manufacture.

[0070] In some embodiments, the thickness of the encapsulation layer 50 is less than 2 micrometers. While ensuring the encapsulation effect of the encapsulation layer 50, reducing its thickness effectively allows for more space to be allocated to the first quantum dot layer 40, thus facilitating an increase in the thickness of the first quantum dot layer 40.

[0071] In addition, in some embodiments, such as Figure 4 As shown, the encapsulation layer 50 may include multiple stacked sub-encapsulation layers, each made of a different material. Since a single-layer encapsulation layer fails relatively quickly, the lifespan of the encapsulation layer 50 can be extended by using multiple stacked sub-encapsulation layers made of different materials.

[0072] Optionally, such as Figure 4 As shown, the encapsulation layer 50 may include three sub-encapsulation layers, specifically including an aluminum oxide (Al2O3) layer 501, a titanium oxide (TiO) layer 502, and a silicon nitride (SiN) layer 503 that are sequentially located further away from the light-emitting functional layer 30.

[0073] The aluminum oxide and titanium oxide layers can be prepared using atomic layer deposition (ALD) technology. ALD technology yields relatively thin and very dense sub-encapsulation layers, which helps reduce the overall thickness of the encapsulation layer 50 while maintaining encapsulation effectiveness. The silicon nitride layer can be obtained using chemical vapor deposition (CVD) technology. The sub-encapsulation layer obtained by CVD technology has a relatively large thickness (generally around 1.2 micrometers), ensuring complete coverage of the aluminum oxide and titanium oxide layers. It can also effectively cover larger dust particles, preventing incomplete encapsulation and thus ensuring effective encapsulation while improving strength.

[0074] In addition, in some embodiments, the pixel definition layer 20 can be made of polyimide (PI). PI is heat-resistant, has good insulation properties, and its fabrication process is mature and low-cost, thus it is widely used in the semiconductor field. Of course, other materials can also be selected for the pixel definition layer 20; there are no specific limitations.

[0075] It should be noted that in the above figures, the light-emitting functional layer 30 is shown as a single-layer structure. However, in reality, the light-emitting functional layer 30 is a multi-layer structure, which includes at least: an anode near the substrate 10, a cathode near the first quantum dot layer 40, and an emission layer (EML) located between the anode and the cathode. Furthermore, it may include one or more of the following: a hole injection layer (HIL), a hole transport layer (HTL), an electron injection layer (EIL), an electron transport layer (ETL), a hole block layer (HBL), and an electron block layer (EBL). Alternatively, the light-emitting functional layer 30 may also be a stacked light-emitting functional layer, that is, including at least two light-emitting layers and a charge generation layer (CGL) located between adjacent light-emitting layers.

[0076] In addition, such as Figure 5As shown, in some embodiments, a driving circuit layer 60 is further included between the substrate 10 and the light-emitting functional layer 30. The driving circuit layer includes multiple driving circuits, each driving one or more light-emitting functional layers 30 to emit light for image display. Each driving circuit includes a driving transistor, the drain of which is electrically connected to the anode of the light-emitting functional layer 30.

[0077] In addition, in some embodiments, the first quantum dot layer 40 is formed of quantum dot material, and the light-emitting functional layer 30 is preferably a blue light-emitting functional layer.

[0078] Specifically, among current quantum dot materials, the ability to convert blue light into red and green light is relatively good. Therefore, when the light-emitting functional layer 30 is a blue light-emitting functional layer, it is more conducive to improving the color conversion rate.

[0079] Accordingly, if the light-emitting functional layer 30 is a blue light-emitting functional layer, the first quantum dot layer 40 may include: a green light first quantum dot layer 401 for forming green light based on the blue light emitted by the light-emitting functional layer, a red light first quantum dot layer 402 for forming red light based on the blue light emitted by the light-emitting functional layer, and a light-transmitting layer 403 for transmitting blue light emitted through the light-emitting functional layer.

[0080] In addition, such as Figure 2 As shown, in some embodiments, the display panel may further include a light filter layer 70 disposed on the side of the first quantum dot layer 40 opposite to the light-emitting functional layer 30; the light filter layer 70 includes: a light filter portion 701 located corresponding to the opening of the first pixel and a light-shielding portion 702 located between adjacent light filter portions 701. The color of the light filter portion 701 is consistent with the emitted light color of the corresponding position of the first quantum dot layer 40, used to filter out unconverted light, thereby ensuring the color purity of the emitted light; the light filter portion 701 may be a light filter. The light-shielding portion 702 is used to block light, thereby reducing color mixing of light emitted from different pixels to improve contrast; the light-shielding portion 702 may be a black matrix.

[0081] Optionally, in some embodiments, an encapsulation layer, such as an aluminum oxide layer, may also be included between the filter layer 70 and the pixel definition layer 20 to encapsulate and protect the first quantum dot layer 40 in the first pixel opening of the pixel definition layer 20.

[0082] exist Figure 5 Based on the display panel shown, in some embodiments, refer to Figure 6 In another type of display panel, the substrate 10 has a second pixel opening, and a second quantum dot layer 80 is disposed in the second pixel opening; the second pixel opening is located on the side of the light-emitting functional layer 30 away from the first pixel opening.

[0083] Based on this, by setting the driving circuit layer 60 as a transparent layer, the light emitted from the light-emitting functional layer 30 can also reach the second quantum dot layer 80 for color conversion, thereby realizing the bottom-emitting function of the display panel. The solution of this embodiment can be applied to technical scenarios such as transparent display, bottom-emitting display, and double-sided display, and can more efficiently improve the display color gamut and brightness.

[0084] Based on this, in some embodiments, the thickness of the substrate 10 can be 10 micrometers. By providing a substrate 10 with a larger thickness, a second quantum dot layer 80 with an effective thickness can be formed in the second pixel opening, thereby improving the color conversion rate.

[0085] Alternatively, the substrate 10 may be made of polyimide or other feasible materials, without any specific limitation.

[0086] Exemplary display device

[0087] This application also provides a display device, which includes a display panel as described in any of the exemplary display panel embodiments above. This display device can be a display device for devices such as smartphones, tablets, and digital cameras, and because it has the display panel described in the above embodiments, it has higher display performance.

[0088] Exemplary preparation method

[0089] This application also provides a method for manufacturing a display panel, referring to... Figure 7 The preparation method includes the following steps:

[0090] Step S101: Form a pixel definition layer on the substrate.

[0091] The substrate can be a flexible substrate made of polyimide material. The flexible substrate can be formed by coating polyimide material onto a glass substrate, and after the display panel is manufactured, the glass substrate can be peeled off by laser or other means to obtain a flexible display panel with a flexible polyimide material substrate.

[0092] In some embodiments, step S101 may specifically include: forming a pixel definition layer on the substrate using a slot coating process. Using a slot coating process allows for a relatively thick pixel definition layer, such as 12 micrometers, facilitating the subsequent formation of a deeper first pixel opening. Of course, it is understood that other processes can also be used to form the pixel definition layer; no specific limitation is imposed.

[0093] Step S102: Etch the pixel definition layer to form multiple isolation sections and a first pixel opening located between adjacent isolation sections.

[0094] In some embodiments, step S102 may specifically include: etching the pixel definition layer using a pre-prepared hard mask to form multiple isolation portions and a first pixel opening located between adjacent isolation portions.

[0095] It should be noted that since the pixel definition layer formed in the previous step S101 is relatively thick, it would be difficult to etch it using the traditional method of etching the pixel definition layer with photoresist. Therefore, in this embodiment, the pixel definition layer can be etched using a pre-prepared hard mask to ensure that the etching effect meets the requirements.

[0096] The fabrication process of a hard mask can include: generating an inorganic thin film material using CVD technology, followed by coating, exposure, development, and etching to form the hard mask. Inorganic thin film materials typically include titanium nitride (TiN), silicon nitride (SiN), silicon dioxide (SiO2), and indium tin oxide (ITO), among others.

[0097] Step S103: A light-emitting functional layer and a first quantum dot layer are sequentially formed in each first pixel opening, so that the light-emitting functional layer and the first quantum dot layer in different first pixel openings are separated by an isolation part.

[0098] That is, the first quantum dot layer is formed on the side of the light-emitting functional layer away from the substrate. The light-emitting functional layer can be prepared by methods such as vapor deposition. The first quantum dot layer can be prepared by inkjet printing technology.

[0099] In some embodiments, after fabricating the light-emitting functional layer, aluminum oxide and titanium oxide layers can be deposited on the light-emitting functional layer first using ALD technology, and then a silicon nitride layer can be deposited on the titanium oxide layer using CVD technology, thereby obtaining a three-layer encapsulation layer to protect the light-emitting functional layer. The first quantum dot layer is then fabricated using inkjet printing technology.

[0100] In addition, after the first quantum dot layer is prepared, an encapsulation layer (such as an aluminum oxide layer) can be set to encapsulate and protect the first quantum dot layer. Finally, a filter layer is prepared, thus completing the fabrication of the display panel.

[0101] Based on the above embodiments, if a second quantum dot layer is provided in the substrate, a rigid temporary substrate, such as PET (polyethylene terephthalate), can be attached to the upper side of the filter layer after the filter layer is prepared. Then, the substrate is etched to form a second pixel opening, and the second quantum dot layer is filled into the second pixel opening.

[0102] The functions and effects of the display panel prepared by the above method can be found in the description of the "Exemplary Display Panel" section, and will not be repeated here.

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that, Includes a substrate and a pixel definition layer disposed on the substrate; The pixel definition layer includes multiple isolation portions, with a first pixel opening between adjacent isolation portions. A light-emitting functional layer and a first quantum dot layer are disposed in the first pixel opening. The first quantum dot layer is disposed on the side of the light-emitting functional layer away from the substrate. The isolation portions are used to separate the light-emitting functional layer and the first quantum dot layer in different first pixel openings. An encapsulation layer is disposed between the light-emitting functional layer and the first quantum dot layer. The encapsulation layer extends to the outside of the first pixel opening and is continuous between adjacent first pixel openings. The encapsulation layer includes multiple stacked sub-encapsulation layers, each made of a different material. The encapsulation layer includes an aluminum oxide layer, a titanium oxide layer, and a silicon nitride layer that are sequentially moved away from the light-emitting functional layer. The thickness of the silicon nitride layer is greater than the thickness of the aluminum oxide layer and the thickness of the titanium oxide layer.

2. The display panel according to claim 1, characterized in that, The light-emitting functional layer includes a first portion located at the bottom of the first pixel opening and a second portion located on the sidewall of the isolation portion. The first portion and the second portion of the light-emitting functional layer form a groove, and at least a portion of the first quantum dot layer is located inside the groove.

3. The display panel according to claim 2, characterized in that, The shape of the cross section of the isolation section perpendicular to the substrate is a trapezoid.

4. The display panel according to claim 1, characterized in that, The height of the isolation section is greater than or equal to the height of the first quantum dot layer.

5. The display panel according to claim 1, characterized in that, The pixel definition layer is made of polyimide.

6. The display panel according to claim 1, characterized in that, The height of the isolation section is at least 10.2 micrometers.

7. The display panel according to any one of claims 1-6, characterized in that, The substrate has a second pixel opening, in which a second quantum dot layer is disposed; the second pixel opening is located on the side of the light-emitting functional layer away from the first pixel opening.

8. The display panel according to claim 1, characterized in that, The thickness of the substrate is 10 micrometers.

9. The display panel according to claim 1, characterized in that, The substrate is made of polyimide.

10. The display panel according to claim 1, characterized in that, The thickness of the encapsulation layer is less than 2 micrometers.

11. The display panel according to claim 1, characterized in that, The encapsulation layer extends outside the first pixel opening and is continuous between adjacent first pixel openings.

12. A display device, characterized in that, Includes the display panel as described in any one of claims 1-11.

13. A method for manufacturing a display panel, characterized in that, include: A pixel definition layer is formed on the substrate; The pixel definition layer is etched to form a plurality of isolation portions and a first pixel opening located between adjacent isolation portions; A light-emitting functional layer and a first quantum dot layer are sequentially formed in each of the first pixel openings, so that the light-emitting functional layer and the first quantum dot layer in different first pixel openings are separated by the isolation portion; An encapsulation layer is disposed between the light-emitting functional layer and the first quantum dot layer. The encapsulation layer extends to the outside of the first pixel opening and is continuous between adjacent first pixel openings. The encapsulation layer includes multiple stacked sub-encapsulation layers, each made of a different material. The encapsulation layer includes an aluminum oxide layer, a titanium oxide layer, and a silicon nitride layer that are gradually moved away from the light-emitting functional layer. The thickness of the silicon nitride layer is greater than the thickness of the aluminum oxide layer and the thickness of the titanium oxide layer.

14. The preparation method according to claim 13, characterized in that, The process of forming a pixel definition layer on the substrate includes: A pixel definition layer is formed on the substrate using a slot coating process; The etching of the pixel definition layer to form a plurality of isolation portions and a first pixel opening located between adjacent isolation portions includes: The pixel definition layer is etched using a pre-prepared hard mask to form multiple isolation portions and a first pixel opening located between adjacent isolation portions.

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